TWI871806B - Device control method and a data storage system - Google Patents
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本發明是有關於一種裝置控制技術,且特別是有關於一種裝置控制方法與資料儲存系統。The present invention relates to a device control technology, and in particular to a device control method and a data storage system.
隨著儲存裝置的資料存取速度越來越快,儲存裝置在運作時的溫度也越來越容易上升。一旦儲存裝置的溫度過高,就可能損壞儲存裝置的內部電路元件,甚至導致儲存在儲存裝置中的使用者資料遺失。因此,部分儲存裝置已支援自動化的降溫處理,例如在儲存裝置的溫度高於特定臨界值時啟動降溫操作,並在儲存裝置的溫度低於特定臨界值時停止降溫操作。此外,在執行降溫操作的期間,儲存裝置的效能一般會大幅降低且維持在低效能模式很長一段時間。但是,實務上,這樣的降溫操作雖然可以有效降低儲存裝置的溫度,但也有很高的機率會導致儲存裝置的效能過度降低,嚴重影響使用者體驗。As the data access speed of storage devices becomes faster and faster, the temperature of storage devices during operation is also more and more likely to rise. Once the temperature of the storage device is too high, it may damage the internal circuit components of the storage device and even cause the loss of user data stored in the storage device. Therefore, some storage devices have supported automatic cooling processing, such as starting the cooling operation when the temperature of the storage device is higher than a certain threshold, and stopping the cooling operation when the temperature of the storage device is lower than a certain threshold. In addition, during the cooling operation, the performance of the storage device will generally be greatly reduced and remain in low-performance mode for a long time. However, in practice, although such cooling operation can effectively reduce the temperature of the storage device, there is a high probability that the performance of the storage device will be excessively reduced, seriously affecting the user experience.
本發明提供一種裝置控制方法與資料儲存系統,可在滿足儲存裝置的基本降溫需求的前提下,盡可能提高裝置效能及/或使用者體驗。The present invention provides a device control method and a data storage system, which can improve the device performance and/or user experience as much as possible while satisfying the basic cooling requirements of the storage device.
本發明的實施例提供一種裝置控制方法,其包括:偵測儲存裝置的溫度;響應於所述溫度高於第一臨界值,啟動所述儲存裝置的降溫操作;響應於所述溫度低於第二臨界值,停止所述降溫操作,其中所述第二臨界值低於所述第一臨界值,其中所述降溫操作包括:根據所述儲存裝置的溫度變化決定控制參數;以及在所述儲存裝置執行所述降溫操作的期間,根據所述控制參數控制所述儲存裝置在第一狀態與第二狀態之間進行至少一次切換,其中所述儲存裝置操作於所述第一狀態的效能低於所述儲存裝置操作於所述第二狀態的效能。An embodiment of the present invention provides a device control method, which includes: detecting the temperature of a storage device; in response to the temperature being higher than a first critical value, starting a cooling operation of the storage device; in response to the temperature being lower than a second critical value, stopping the cooling operation, wherein the second critical value is lower than the first critical value, wherein the cooling operation includes: determining a control parameter according to a change in the temperature of the storage device; and during the period when the storage device performs the cooling operation, controlling the storage device to switch between a first state and a second state at least once according to the control parameter, wherein the performance of the storage device operating in the first state is lower than the performance of the storage device operating in the second state.
本發明的實施例另提供一種資料儲存系統,其包括主機系統與儲存裝置。所述儲存裝置耦接至所述主機系統。所述儲存裝置用以:偵測所述儲存裝置的溫度;響應於所述溫度高於第一臨界值,啟動所述儲存裝置的降溫操作;響應於所述溫度低於第二臨界值,停止所述降溫操作,其中所述第二臨界值低於所述第一臨界值,其中在所述儲存裝置執行所述降溫操作的期間,所述主機系統用以:根據所述儲存裝置的溫度變化決定控制參數;以及根據所述控制參數控制所述儲存裝置在第一狀態與第二狀態之間進行至少一次切換,其中所述儲存裝置操作於所述第一狀態的效能低於所述儲存裝置操作於所述第二狀態的效能。The embodiment of the present invention further provides a data storage system, which includes a host system and a storage device. The storage device is coupled to the host system. The storage device is used to: detect the temperature of the storage device; in response to the temperature being higher than a first critical value, start a cooling operation of the storage device; in response to the temperature being lower than a second critical value, stop the cooling operation, wherein the second critical value is lower than the first critical value, wherein during the period when the storage device performs the cooling operation, the host system is used to: determine a control parameter according to a change in the temperature of the storage device; and control the storage device to switch between a first state and a second state at least once according to the control parameter, wherein the performance of the storage device operating in the first state is lower than the performance of the storage device operating in the second state.
基於上述,在啟動儲存裝置的降溫操作後,在儲存裝置執行所述降溫度操作的期間,控制參數可根據儲存裝置的溫度變化而動態決定。爾後,在儲存裝置執行所述降溫操作的期間,此控制參數可用以控制儲存裝置在第一狀態與第二狀態之間進行至少一次切換。其中,儲存裝置操作於第一狀態的效能低於儲存裝置操作於第二狀態的效能。藉此,可在滿足儲存裝置的基本降溫需求的前提下,盡可能提高裝置效能及/或使用者體驗。Based on the above, after the cooling operation of the storage device is started, during the period when the storage device performs the cooling operation, the control parameter can be dynamically determined according to the temperature change of the storage device. Thereafter, during the period when the storage device performs the cooling operation, the control parameter can be used to control the storage device to switch between the first state and the second state at least once. The performance of the storage device operating in the first state is lower than the performance of the storage device operating in the second state. In this way, the device performance and/or user experience can be improved as much as possible under the premise of meeting the basic cooling requirements of the storage device.
圖1是根據本發明的實施例所繪示的資料儲存系統的示意圖。請參照圖1,資料儲存系統10包括主機系統11與儲存裝置12。主機系統11可將資料儲存至儲存裝置12中,或從儲存裝置12中讀取資料。例如,主機系統11為可實質地與儲存裝置12配合以儲存資料的任意系統,例如,智慧型手機、平板電腦、筆記型電腦、桌上型電腦、工業電腦、伺服器、智慧電視或車載電腦等各式系統,而儲存裝置12則可為隨身碟、記憶卡、固態硬碟(Solid State Drive, SSD)、安全數位(Secure Digital, SD)卡、小型快閃(Compact Flash, CF)卡或嵌入式儲存裝置等各式非揮發性儲存裝置。FIG1 is a schematic diagram of a data storage system according to an embodiment of the present invention. Referring to FIG1 , the
主機系統11可包括處理器111與連接界面112。處理器111可包括中央處理單元(Central Processing Unit, CPU)或是其他可程式化之一般用途或特殊用途的微處理器、數位訊號處理器(Digital Signal Processor, DSP)、可程式化控制器、特殊應用積體電路(Application Specific Integrated Circuits, ASIC)、可程式化邏輯裝置(Programmable Logic Device, PLD)或其他類似裝置或這些裝置的組合。處理器111用以控制主機系統11的整體或部分運作。以下實施例中,對主機系統11的操作之描述可等同於對處理器111的操作之描述。The
連接界面112耦接至處理器111並用以將訊號(包含資料與指令)傳輸至儲存裝置12或從儲存裝置12接收訊號。在一實施例中,主機系統11還包含任何實務上所需的硬體裝置,例如電池單元、網路界面卡、鍵盤(或觸控板)、螢幕及/或揚聲器等等。The
儲存裝置12可包括連接界面121、記憶體控制器122及記憶體模組123。連接界面121用以連接主機系統11的連接界面112並經由連接界面112與主機系統11通訊。在一實施例中,連接界面112與121符合NVM Express (NVMe)界面規範。在另一實施例中,連接界面112與121亦可以符合序列先進附件(Serial Advanced Technology Attachment, SATA)、並列先進附件(Parallel Advanced Technology Attachment, PATA)、高速周邊零件連接界面(Peripheral Component Interconnect Express, PCI Express)或通用序列匯流排(Universal Serial Bus, USB)等各式連接界面標準。The
記憶體控制器122耦接至連接界面121與記憶體模組123。記憶體控制器122用以執行以硬體型式或韌體型式實作的多個邏輯閘或控制指令並且根據來自主機系統11的指令在記憶體模組123中進行資料的寫入、讀取與抹除等運作。此外,記憶體控制器122也可控制儲存裝置12的整體運作。在一實施例中,記憶體控制器122亦稱為快閃記憶體控制器。The
記憶體模組123用以儲存主機系統11所寫入之資料。例如,記憶體模組123可包括單階胞(single level cell, SLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存1個位元的快閃記憶體模組)、多階胞(multi level cell, MLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存2個位元的快閃記憶體模組)、三階胞(triple level cell, TLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存3個位元的快閃記憶體模組)、四階胞(quad level cell, QLC)NAND型快閃記憶體模組(即,一個記憶胞可儲存4個位元的快閃記憶體模組)或其他類型的記憶體模組。例如,記憶體模組123中的記憶胞是以臨界電壓的改變來儲存資料。The
在一實施例中,記憶體控制器122可偵測儲存裝置12的溫度。例如,記憶體控制器122可透過設置於儲存裝置12內部的溫度感測器(未繪示)來偵測儲存裝置12的溫度。在一實施例中,記憶體控制器122可透過連接界面121將所偵測到的儲存裝置12的溫度回報給主機系統11。In one embodiment, the
在一實施例中,記憶體控制器122可判斷儲存裝置12的溫度是否高於一個臨界值(亦稱為第一臨界值)。響應於儲存裝置12的溫度高於第一臨界值,記憶體控制器122可啟動儲存裝置12的一個降溫操作。此降溫操作可用以降低儲存裝置12的溫度。例如,在儲存裝置12執行降溫操作的期間,記憶體控制器122可降低儲存裝置12的效能,以對儲存裝置12進行降溫。例如,記憶體控制器122可透過降低儲存裝置12的時脈頻率及/或降低記憶體模組123的效能(例如降低記憶體模組123的資料寫入速度及/或資料讀取速度)等方式,來對儲存裝置12進行降溫。須注意的是,在儲存裝置12執行降溫操作的期間,記憶體控制器122還可透過其他控制手段來降低儲存裝置12的效能,以對儲存裝置12進行降溫,本發明不加以限制。In one embodiment, the
在一實施例中,在啟動降溫操作後,記憶體控制器122可判斷儲存裝置12的溫度是否低於另一個臨界值(亦稱為第二臨界值)。第二臨界值低於第一臨界值。響應於儲存裝置12的溫度低於第二臨界值,記憶體控制器122可停止所述降溫操作。In one embodiment, after starting the cooling operation, the
圖2是根據本發明的實施例所繪示的儲存裝置在不同時間點啟動與停止降溫操作的示意圖。請參照圖2,在一實施例中,假設在時間點T(0),記憶體控制器122判定儲存裝置12的溫度高於臨界值THR(1)(即第一臨界值)。因此,在時間點T(0),記憶體控制器122可控制儲存裝置12執行降溫操作。在儲存裝置12執行降溫操作一段時間後,假設在時間點T(1),記憶體控制器122判定儲存裝置12的溫度低於臨界值THR(2)(即第二臨界值)。因此,在時間點T(1),記憶體控制器122可控制儲存裝置12停止執行所述降溫操作。在一實施例中,在時間點T(0)與T(1)之間,儲存裝置12執行的降溫操作可用以對儲存裝置12進行間歇性溫度控制。關於間歇性溫度控制的操作細節容後詳述。FIG2 is a schematic diagram of a storage device starting and stopping a cooling operation at different time points according to an embodiment of the present invention. Referring to FIG2, in one embodiment, it is assumed that at time point T(0), the
在一實施例中,在儲存裝置12執行降溫操作的期間(例如圖2的時間點T(0)至T(1)),主機系統11可持續從儲存裝置12接收溫度資訊。此溫度資訊可反映儲存裝置12在多個時間點偵測到的溫度。主機系統11可根據此溫度資訊獲得在儲存裝置12執行降溫操作的期間,儲存裝置12的溫度變化。例如,此溫度變化可反映在儲存裝置12執行降溫操作的期間,儲存裝置12的溫度是隨著時間增加而持續升高、持續降低或維持不變。In one embodiment, during the period when the
在一實施例中,主機系統11可根據此溫度變化決定控制參數。然後,在儲存裝置12執行降溫操作的期間,主機系統11可根據此控制參數來控制儲存裝置12在多個狀態之間進行至少一次切換。例如,假設所述多個狀態包括第一狀態與第二狀態,則在儲存裝置12執行降溫操作的期間,主機系統11可根據此控制參數來控制儲存裝置12在第一狀態與第二狀態之間進行至少一次切換。例如,每一次的切換可包括控制或指示儲存裝置12從第一狀態切換至第二狀態,或從第二狀態切換至第一狀態。In one embodiment, the
須注意的是,在儲存裝置12執行降溫操作的期間,儲存裝置12操作於第一狀態的效能可低於儲存裝置12操作於第二狀態的效能。例如,在儲存裝置12執行降溫操作的期間,在不同狀態(即第一狀態與第二狀態)下,記憶體控制器122可透過不同的控制策略來降低、維持或提高儲存裝置12的效能,只要滿足儲存裝置12操作於第一狀態的效能低於儲存裝置12操作於第二狀態的效能即可。此外,儲存裝置12操作於第一狀態的單位時間耗電量可低於儲存裝置12操作於第二狀態的單位時間耗電量。It should be noted that during the period when the
在一實施例中,在儲存裝置12執行降溫操作的期間,在第二狀態下,記憶體控制器122亦可不降低儲存裝置12的效能(等同於將操作於第二狀態的儲存裝置12的效能回復至預設效能),只要滿足儲存裝置12操作於第一狀態的效能低於儲存裝置12操作於第二狀態的效能即可。藉此,在儲存裝置12執行降溫操作的期間,儲存裝置12的效能可以在部分時段被間歇性的降低並且在其餘時段被間歇性的提高(或恢復),以對儲存裝置12進行間歇性溫度控制。藉此,可在滿足儲存裝置的基本降溫需求的前提下,嘗試間歇性的提高儲存裝置的效能,進而提高使用者體驗。In one embodiment, during the period when the
在一實施例中,所述控制參數用以在儲存裝置12執行降溫操作的期間,控制儲存裝置12操作於第一狀態的時間長度(亦稱為第一時間長度)及/或儲存裝置12操作於第二狀態的時間長度(亦稱為第二時間長度)。例如,在儲存裝置12執行降溫操作的期間,主機系統11可根據所決定的控制參數來控制儲存裝置12單次操作於第一狀態的持續時間(即第一時間長度)及/或單次操作於第二狀態的持續時間(即第二時間長度)。In one embodiment, the control parameter is used to control the length of time that the
圖3是根據本發明的實施例所繪示的在儲存裝置執行降溫操作的期間多次切換儲存裝置的狀態的示意圖。請參照圖3,接續於圖2的實施例,假設在時間點T(0),儲存裝置12的降溫操作被啟動,且在時間點T(1),儲存裝置12的降溫操作被停止。在時間點T(0)與T(1)之間,儲存裝置12持續執行降溫操作,以對儲存裝置12進行間歇性溫度控制。FIG3 is a schematic diagram of multiple switching states of a storage device during a cooling operation of the storage device according to an embodiment of the present invention. Referring to FIG3 , continuing from the embodiment of FIG2 , it is assumed that at time point T(0), the cooling operation of the
在一實施例中,在儲存裝置12執行降溫操作的期間,主機系統11可控制儲存裝置12在狀態A(即第一狀態)與狀態B(即第二狀態)之間進行至少一次切換。例如,儲存裝置12在狀態A與狀態B之間進行切換的次數,可正相關於執行降溫操作的時間長度。若執行降溫操作的時間長度越長,則儲存裝置12在狀態A與狀態B之間進行切換的次數可持續增加。此外,儲存裝置12操作於狀態A的效能可低於儲存裝置12操作於狀態B的效能。In one embodiment, during the period when the
在一實施例中,在時間點T(0)與T(2)之間,主機系統11可控制儲存裝置12操作於效能較低的狀態A,以對儲存裝置12進行降溫。在時間點T(2),主機系統11可控制儲存裝置12從狀態A切換至狀態B。在時間點T(2)與T(3)之間,主機系統11可控制儲存裝置12操作於效能較高的狀態B,以提升或恢復儲存裝置12的效能。在時間點T(3),主機系統11可控制儲存裝置12從狀態B切換至狀態A。在時間點T(3)與T(4)之間,主機系統11可控制儲存裝置12操作於效能較低的狀態A,以再次對儲存裝置12進行降溫。在時間點T(4),主機系統11可控制儲存裝置12從狀態A切換至狀態B。也就是說,在時間點T(4)與T(5)之間,主機系統11可控制儲存裝置12操作於效能較高的狀態B,以提升或恢復儲存裝置12的效能。依此類推,在儲存裝置12執行降溫操作的期間(即時間點T(0)至T(1)),主機系統11可控制儲存裝置12在狀態A與狀態B之間進行多次切換,以對儲存裝置12執行間歇性溫度控制,直到在時間點T(1)停止降溫操作為止。In one embodiment, between time points T(0) and T(2), the
在一實施例中,在儲存裝置12執行降溫操作的期間,主機系統11可根據所決定的控制參數來控制儲存裝置12執行狀態切換的時間點。以圖2為例,儲存裝置12執行狀態切換的時間點包括時間點T(2)、T(3)、T(4)及/或T(5)。In one embodiment, during the cooling operation of the
在一實施例中,在儲存裝置12執行降溫操作的期間,主機系統11可根據所決定的控制參數來控制時間點T(0)與T(2)之間的時間長度ΔT(1)(即第一時間長度)、時間點T(2)與T(3)之間的時間長度ΔT(2)(即第二時間長度)、時間點T(3)與T(4)之間的時間長度ΔT(1)’(即第一時間長度)、及時間點T(4)與T(5)之間的時間長度ΔT(2)’(即第二時間長度)。In one embodiment, while the
在一實施例中,在儲存裝置12執行降溫操作的期間,主機系統11可判斷儲存裝置12的溫度變化趨勢是否符合預設條件。響應於儲存裝置12的溫度變化趨勢符合預設條件,主機系統11可調整所述控制參數。特別是,調整後的控制參數可用以在儲存裝置12執行降溫操作的期間,改變儲存裝置12操作於第一狀態的第一時間長度(例如圖3中的ΔT(1)及/或ΔT(1)’)及/或儲存裝置12操作於第二狀態的第二時間長度(例如圖3中的ΔT(2)及/或ΔT(2)’)。然而,若儲存裝置12的溫度變化趨勢不符合預設條件,則主機系統11可不調整所述控制參數。若主機系統11不調整所述控制參數,則第一時間長度與第二時間長度亦可不被調整(即被維持為先前的設定值)。In one embodiment, during the period when the
在一實施例中,在儲存裝置12執行降溫操作的期間,主機系統11可判斷儲存裝置12的溫度是否隨著時間增加而上升。響應於儲存裝置12的溫度隨著時間增加而上升(例如在至少一時間點偵測到的儲存裝置12的溫度高於先前的至少一時間點偵測到的儲存裝置12的溫度),主機系統11可判定儲存裝置12的溫度變化趨勢符合預設條件。In one embodiment, during the cooling operation of the
在一實施例中,響應於儲存裝置12的溫度變化趨勢符合預設條件(即儲存裝置12的溫度隨著時間增加而上升),主機系統11可根據調整後的控制參數,在儲存裝置12執行降溫操作的期間,延長儲存裝置12操作於第一狀態的第一時間長度及/或縮短儲存裝置12操作於第二狀態的第二時間長度。透過延長儲存裝置12操作於第一狀態的第一時間長度及/或縮短儲存裝置12操作於第二狀態的第二時間長度,可在儲存裝置12執行降溫操作的期間,提高儲存裝置12的降溫效率。In one embodiment, in response to the temperature change trend of the
以圖3為例,假設在開始執行降溫操作並執行至少一次的狀態切換後,儲存裝置12的溫度變化趨勢符合預設條件(即儲存裝置12的溫度持續隨著時間增加而上升)。響應於儲存裝置12的溫度變化趨勢符合預設條件,主機系統11可調整控制參數並根據調整後的控制參數,在儲存裝置12執行降溫操作的期間,增加時間點T(3)與T(4)之間的時間長度(即ΔT(1)’)及/或減少時間點T(4)與T(5)之間的時間長度(即ΔT(2)’)。例如,主機系統11可將ΔT(1)’設定為ΔT(1)+S(1)及/或將ΔT(2)’設定為ΔT(2)-S(2)。S(1)與S(2)為調整參數,且S(1)與S(2)可根據實務需求進行設定。在一實施例中,透過增加ΔT(1)’(即延長儲存裝置12操作於效率較低的狀態A的時間)及/或減少ΔT(2)’(即縮短儲存裝置12操作於效率較高的狀態B的時間),可提高儲存裝置12在時間點T(3)與T(5)之間的降溫效率。Taking FIG. 3 as an example, it is assumed that after the cooling operation is started and at least one state switching is performed, the temperature change trend of the
在一實施例中,在儲存裝置12執行降溫操作的期間,響應於儲存裝置12的溫度未隨著時間增加而上升(表示當前儲存裝置12的降溫效率不錯),主機系統11可判定儲存裝置12的溫度變化趨勢不符合預設條件。若儲存裝置12的溫度變化趨勢不符合預設條件,主機系統11可不調整所述控制參數。在圖3的一實施例中,若所述控制參數未被調整,則儲存裝置12操作於第一狀態的第一時間長度及/或儲存裝置12操作於第二狀態的第二時間長度可不被調整(即ΔT(1)’可等於ΔT(1)及/或ΔT(2)’可等於ΔT(2))。依此類推,在儲存裝置12執行降溫操作的期間,主機系統11可持續根據儲存裝置12的溫度變化趨勢是否符合預設條件來動態調整或維持下一次的第一時間長度及/或第二時間長度。In one embodiment, during the cooling operation of the
在一實施例中,ΔT(1)與ΔT(2)的總和等於ΔT(1)’與ΔT(2)’的總和。在一實施例中,若增加ΔT(1)’,則ΔT(2)’會相應減少。或者,在一實施例中,若增加ΔT(2)’,則ΔT(1)’會相應減少。In one embodiment, the sum of ΔT(1) and ΔT(2) is equal to the sum of ΔT(1)' and ΔT(2)'. In one embodiment, if ΔT(1)' is increased, ΔT(2)' will be reduced accordingly. Alternatively, in one embodiment, if ΔT(2)' is increased, ΔT(1)' will be reduced accordingly.
在一實施例中,主機系統11可根據所決定的控制參數,在需要切換儲存裝置12的狀態的時間點(例如圖3中的時間點T(2)、T(3)、T(4)及T(5))發送控制指令至儲存裝置12。藉此,在需要切換儲存裝置12的狀態的時間點(例如圖3中的時間點T(2)、T(3)、T(4)及T(5)),記憶體控制器122可根據來自主機系統11的控制指令切換儲存裝置12的狀態,例如從第一狀態切換至第二狀態,或從第二狀態切換至第一狀態。In one embodiment, the
在一實施例中,啟動儲存裝置12的降溫操作及/或停止儲存裝置12的降溫操作是由記憶體控制器122控制。然而,在一實施例中,啟動儲存裝置12的降溫操作及/或停止儲存裝置12的降溫操作亦可以是由主機系統11控制。例如,在一實施例中,響應於儲存裝置12的溫度高於第一臨界值,主機系統11可發送控制指令至儲存裝置12,以指示記憶體控制器122啟動儲存裝置12的降溫操作。爾後,響應於儲存裝置12的溫度低於第二臨界值,主機系統11可發送控制指令至儲存裝置12,以指示記憶體控制器122停止儲存裝置12的降溫操作。In one embodiment, starting the cooling operation of the
圖4是根據本發明的實施例所繪示的裝置控制方法的流程圖。請參照圖4,在步驟S401中,偵測儲存裝置的溫度。在步驟S402中,判斷儲存裝置的溫度是否高於第一臨界值。響應於儲存裝置的溫度高於第一臨界值,在步驟S403中,啟動儲存裝置的降溫操作。然而,若儲存裝置的溫度不高於第一臨界值,步驟S402後可回到步驟S401,持續偵測儲存裝置的溫度。在啟動儲存裝置的降溫操作後,在步驟S404中,判斷儲存裝置的溫度是否低於第二臨界值。第二臨界值低於第一臨界值。響應於儲存裝置的溫度低於第二臨界值,在步驟S405中,結束儲存裝置的降溫操作。然而,若儲存裝置的溫度不低於第二臨界值,步驟S404與儲存裝置的降溫操作可持續執行。FIG4 is a flow chart of a device control method according to an embodiment of the present invention. Referring to FIG4, in step S401, the temperature of the storage device is detected. In step S402, it is determined whether the temperature of the storage device is higher than a first critical value. In response to the temperature of the storage device being higher than the first critical value, in step S403, a cooling operation of the storage device is started. However, if the temperature of the storage device is not higher than the first critical value, after step S402, the process may return to step S401 to continue detecting the temperature of the storage device. After the cooling operation of the storage device is started, in step S404, it is determined whether the temperature of the storage device is lower than the second critical value. The second critical value is lower than the first critical value. In response to the temperature of the storage device being lower than the second critical value, in step S405, the cooling operation of the storage device is terminated. However, if the temperature of the storage device is not lower than the second critical value, step S404 and the cooling operation of the storage device can continue to be executed.
圖5是根據本發明的實施例所繪示的裝置控制方法的流程圖。請參照圖5,在步驟S501中,根據儲存裝置的溫度變化決定控制參數。在步驟S502中,在儲存裝置執行降溫操作的期間,根據所述控制參數控制儲存裝置在第一狀態與第二狀態之間進行至少一次切換,其中儲存裝置操作於第一狀態的效能低於儲存裝置操作於第二狀態的效能。FIG5 is a flow chart of a device control method according to an embodiment of the present invention. Referring to FIG5, in step S501, a control parameter is determined according to a temperature change of the storage device. In step S502, during the period when the storage device performs a cooling operation, the storage device is controlled to switch between a first state and a second state at least once according to the control parameter, wherein the performance of the storage device operating in the first state is lower than the performance of the storage device operating in the second state.
圖6是根據本發明的實施例所繪示的裝置控制方法的流程圖。請參照圖6,在步驟S601中,判斷儲存裝置的溫度變化趨勢是否符合預設條件。響應於儲存裝置的溫度變化趨勢符合預設條件,在步驟S602中,調整控制參數。調整後的控制參數可用以在儲存裝置執行降溫操作的期間,改變儲存裝置操作於第一狀態的第一時間長度及/或儲存裝置操作於第二狀態的第二時間長度。然而,若儲存裝置的溫度變化趨勢不符合預設條件,可不調整所述控制參數。FIG6 is a flow chart of a device control method according to an embodiment of the present invention. Referring to FIG6, in step S601, it is determined whether the temperature change trend of the storage device meets the preset conditions. In response to the temperature change trend of the storage device meeting the preset conditions, in step S602, the control parameters are adjusted. The adjusted control parameters can be used to change the first time length of the storage device operating in the first state and/or the second time length of the storage device operating in the second state during the storage device performing a cooling operation. However, if the temperature change trend of the storage device does not meet the preset conditions, the control parameters may not be adjusted.
然而,圖4至圖6中各步驟已詳細說明如上,在此便不再贅述。值得注意的是,圖4至圖6中各步驟可以實作為多個程式碼或是電路,本發明不加以限制。此外,圖4至圖6的方法可以搭配以上範例實施例使用,也可以單獨使用,本發明不加以限制。However, each step in FIG. 4 to FIG. 6 has been described in detail above, and will not be repeated here. It is worth noting that each step in FIG. 4 to FIG. 6 can be implemented as multiple program codes or circuits, and the present invention is not limited thereto. In addition, the method of FIG. 4 to FIG. 6 can be used in conjunction with the above exemplary embodiments, or can be used alone, and the present invention is not limited thereto.
綜上所述,本發明所提出的裝置控制方法與資料儲存系統,可在儲存裝置執行降溫操作的期間,控制儲存裝置在第一狀態與第二狀態之間進行至少一次切換。此外,根據儲存裝置執行降溫操作的期間,儲存裝置的溫度變化趨勢是否符合預設條件,儲存裝置操作於第一狀態的第一時間長度及/或儲存裝置操作於第二狀態的第二時間長度可被動態調整。藉此,可在滿足儲存裝置的基本降溫需求的前提下,盡可能提高裝置效能及/或使用者體驗。In summary, the device control method and data storage system proposed by the present invention can control the storage device to switch between the first state and the second state at least once during the period when the storage device performs a cooling operation. In addition, according to whether the temperature change trend of the storage device during the period when the storage device performs a cooling operation meets the preset conditions, the first time length of the storage device operating in the first state and/or the second time length of the storage device operating in the second state can be dynamically adjusted. In this way, the device performance and/or user experience can be improved as much as possible under the premise of meeting the basic cooling requirements of the storage device.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above by the embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.
10:資料儲存系統
11:主機系統
111:處理器
112, 121:連接界面
12:儲存裝置
122:記憶體控制器
123:記憶體模組
T(0)~T(5):時間點
ΔT(1), ΔT(2), ΔT(1)’, ΔT(2)’:時間長度
S(1), S(2):調整參數
S401~S405, S501, S502, S601, S602:步驟
10: Data storage system
11: Host system
111:
圖1是根據本發明的實施例所繪示的資料儲存系統的示意圖。 圖2是根據本發明的實施例所繪示的儲存裝置在不同時間點啟動與停止降溫操作的示意圖。 圖3是根據本發明的實施例所繪示的在儲存裝置執行降溫操作的期間多次切換儲存裝置的狀態的示意圖。 圖4是根據本發明的實施例所繪示的裝置控制方法的流程圖。 圖5是根據本發明的實施例所繪示的裝置控制方法的流程圖。 圖6是根據本發明的實施例所繪示的裝置控制方法的流程圖。 FIG. 1 is a schematic diagram of a data storage system according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a storage device starting and stopping a cooling operation at different time points according to an embodiment of the present invention. FIG. 3 is a schematic diagram of switching the state of a storage device multiple times during a cooling operation of the storage device according to an embodiment of the present invention. FIG. 4 is a flow chart of a device control method according to an embodiment of the present invention. FIG. 5 is a flow chart of a device control method according to an embodiment of the present invention. FIG. 6 is a flow chart of a device control method according to an embodiment of the present invention.
S501,S502:步驟 S501, S502: Steps
Claims (10)
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| US20190058474A1 (en) * | 2017-08-17 | 2019-02-21 | Western Digital Technologies, Inc. | Dynamic calibration of frequency and power storage interface |
| CN111968684A (en) * | 2020-09-01 | 2020-11-20 | 深圳大普微电子科技有限公司 | Temperature control method, device and equipment of memory and storage medium |
| US20210303211A1 (en) * | 2020-03-31 | 2021-09-30 | SK Hynix Inc. | Data storage apparatus and operation method thereof |
| CN116581432A (en) * | 2023-05-31 | 2023-08-11 | 蜂巢能源科技股份有限公司 | Temperature control method, device, equipment and storage medium |
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| US20190058474A1 (en) * | 2017-08-17 | 2019-02-21 | Western Digital Technologies, Inc. | Dynamic calibration of frequency and power storage interface |
| US20210303211A1 (en) * | 2020-03-31 | 2021-09-30 | SK Hynix Inc. | Data storage apparatus and operation method thereof |
| CN111968684A (en) * | 2020-09-01 | 2020-11-20 | 深圳大普微电子科技有限公司 | Temperature control method, device and equipment of memory and storage medium |
| CN116581432A (en) * | 2023-05-31 | 2023-08-11 | 蜂巢能源科技股份有限公司 | Temperature control method, device, equipment and storage medium |
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