TWI871719B - Measuring method of wafers - Google Patents

Abstract

A measuring method of wafers includes the following steps: (a) setting a measuring parameter; (b) setting a measuring temperature; (c) using a probe card to measure a first wafer to obtain a measuring result according to the measuring parameter and the measuring temperature; (d) changing the measuring parameter and repeating step (c) on a second wafer to obtain another measuring result; (e) changing the measuring parameter and the measuring temperature and repeating step (c) on a third wafer.

Description

Wafer measurement method

The present disclosure relates to a wafer measurement method.

After semiconductor components are manufactured, the finished wafers will go through a series of tests to ensure the yield. During the test, a specific location (i.e. a specific die) is usually selected, and the test is performed at a specific temperature after the device is heated or cooled. However, the current method can only specify a single test parameter and a single test temperature. If you want to change the test temperature or parameter, you can only manually change it on the test machine, and it is not fully automated.

One technical aspect of the present disclosure is a wafer measurement method.

According to one embodiment of the present disclosure, a wafer measurement method includes the following steps: (a) setting a measurement parameter value; (b) setting a measurement temperature; (c) using a probe card to measure a first wafer according to the measurement parameter value and the measurement temperature to obtain a measurement result; (d) changing the measurement parameter value and repeating step (c) on a second wafer to obtain another measurement result; (e) changing the measurement parameter value and the measurement temperature and repeating step (c) on a third wafer.

In one embodiment of the present disclosure, using the probe card to measure the first wafer according to the measurement parameter value and the measurement temperature includes using the probe card to provide a measurement signal to the first wafer.

In an embodiment of the present disclosure, the wafer measurement method further includes setting a plurality of preset measurement parameter values in the same operation interface before step (a) is performed, wherein the measurement parameter value is one of the preset measurement parameter values.

In an embodiment of the present disclosure, setting the measurement parameter value includes setting a measurement position map of the operation interface.

In one embodiment of the present disclosure, changing the measurement parameter value and measuring the temperature includes setting another measurement position map of the operation interface.

In one embodiment of the present disclosure, the measurement position map corresponds to the position where the probe card contacts the first wafer, the second wafer or the third wafer respectively.

In one embodiment of the present disclosure, when a probe card is used to measure a first wafer according to a measurement parameter value and a measurement temperature to obtain a measurement result, the measurement temperature remains unchanged.

In one embodiment of the present disclosure, the probe card is used to measure the first wafer according to the measurement parameter value and the measurement temperature to obtain the measurement result using the probe stage.

In one embodiment of the present disclosure, the measured temperature is set using flowing air heating and cooling.

In one embodiment of the present disclosure, the measured temperature is in the range of -50 degrees Celsius to 150 degrees Celsius.

In the above-mentioned implementation method of the present disclosure, since the measurement parameter values and temperature are set, and all the preset measurement parameter values and temperature are pre-set in the same operation interface, the measurement of the wafer can be fully automated without the need for personnel to manually adjust the measurement parameter values and the temperature of the heating and cooling system, thereby achieving a more convenient measurement effect.

The embodiments disclosed below provide many different embodiments, or examples, for implementing different features of the subject matter provided. Specific examples of components and arrangements are described below to simplify the present invention. Of course, these examples are only examples and are not intended to be limiting. In addition, the present invention may repeat component symbols and/or letters in each example. This repetition is for the purpose of simplicity and clarity, and does not itself specify the relationship between the various embodiments and/or configurations discussed.

Spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein for descriptive purposes to describe the relationship of one element or feature to another element or feature as illustrated in the accompanying figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the accompanying figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

FIG. 1 is a flow chart of a wafer testing method according to one embodiment of the present disclosure. Referring to FIG. 1, the wafer measurement method includes the following steps: first, in step S1, a measurement parameter value is set; then, in step S2, a measurement temperature is set; then, in step S3, a probe card is used to measure a first wafer according to the measurement parameter value and the measurement temperature to obtain a measurement result; then, in step S4, the measurement parameter value is changed, and step S3 is repeated on a second wafer to obtain another measurement result. Finally, in step S5, the measurement parameter value and the measurement temperature are changed, and step S3 is repeated on a third wafer.

In some embodiments, the wafer measurement method is not limited to the above steps S1 to S5. For example, each of steps S1 to S5 may include other more detailed steps. In some embodiments, steps S1 to S5 may further include other steps between the two preceding and following steps, or may further include other steps before step S1 and further include other steps after step S5. Alternatively, some steps between S1 to S5 may be repeated. In the following description, at least the above steps will be described in detail.

FIG. 2 is a schematic diagram of a wafer test machine 100 according to one embodiment of the present disclosure. Referring to FIG. 2, the wafer test machine 100 includes a test machine 110, a temperature ramp system 120, and a probe station 130. The test machine 110 is electrically connected to the temperature ramp system 120, and the temperature ramp system 120 is electrically connected to the probe station 130. The probe station 130 includes a probe card 132. The probe station 130 is configured to receive a wafer W, which may be a wafer stack, such as wafers W1 to W10 of FIG. 3. Each time a measurement is performed, the probe station 130 may receive one of the wafers W1 to W10. The setting of the measurement parameter value (e.g., a measurement position map) of the wafer W is performed on the operating interface (e.g., a screen, a keyboard, and a mouse) of the test machine 110. Next, the wafer W will pass through the temperature rise and fall system 120, using flowing air to heat and cool to the specified measurement temperature. At this time, the probe card 132 will approach the wafer W. The wafer W here can be a device under test (DUT), but is not limited to this. The purpose of allowing the probe card 132 to approach the wafer W after the temperature rise and fall system 120 completes the temperature change is to prevent the probe on the probe card 132 from compressing the device under test (that is, wafer W) due to thermal expansion and contraction during the temperature rise and fall, thereby causing damage to the device under test. The probe card 132 is used to measure the first wafer according to the measurement parameter value and the measurement temperature to obtain the measurement result, which is performed using the probe station 130. Using the probe card 132 to measure the first wafer (eg, wafer W) according to the measurement parameter value and the measurement temperature includes using the probe card 132 to provide a measurement signal to the first wafer.

FIG. 3 to FIG. 6 illustrate process schematic diagrams of a wafer testing method according to one embodiment of the present disclosure. Refer to FIG. 3. Before all measurements begin, a default measurement parameter value is set in the same operating interface, wherein the measurement parameter value is one of the default measurement parameter values. Setting the measurement parameter value includes setting a measurement position diagram of the operating interface. That is, the measurement parameter value may include the first position diagram 210, the second position diagram 220, the third position diagram 230, the fourth position diagram 240, the fifth position diagram 250, the sixth position diagram 260, or other measurement parameters shown in FIG. 3 to FIG. 6. One of the above-mentioned measurement position diagrams corresponds to the position of the probe card 132 (see Figure 2) on the first wafer (for example, wafer W1), the second wafer (for example, wafer W2) or the third wafer (for example, wafer W3) respectively contacting the first wafer, the second wafer or the third wafer. That is to say, when a measurement position diagram is specified, the probe card 132 will reach the corresponding position to contact the device to be measured, and use the probe card 132 to provide measurement signals to the first wafer (for example, wafer W1), the second wafer (for example, wafer W2) or the third wafer (for example, wafer W3).

After the position diagram is specified (the first position diagram 210 in FIG. 3), the next step is to start heating and cooling. The heating and cooling can specify the measurement temperature required for the measurement (the first temperature 310 in FIG. 3). In addition, the first temperature 310, the second temperature 320, the third temperature 330 and the fourth temperature 340 are in the range of -50 degrees Celsius to 150 degrees Celsius. After the heating and cooling are completed, the probe card 132 will approach the wafer W1 to be tested and move onto the probe stage 130. In this embodiment, the same measurement conditions can be used to measure more than one wafer. For example, after measuring the wafer W1 to be tested, the same measurement can be performed on the wafer W4 under the same conditions. When the probe card 132 is used to measure the first wafer (eg wafer W1) according to the measurement parameter value and the measurement temperature to obtain the measurement result, the measurement temperature is kept unchanged to avoid possible thermal expansion and contraction damage to the device under test.

Referring to FIG. 4, then, the measurement parameter value is changed (in FIG. 4, it is changed from the first position map 210 to the second position map 220), and the measurement steps on the wafer are repeated. In the present embodiment, changing the position map also changes the wafer to be tested. As shown in FIG. 4, the wafer to be tested is changed from the original wafer W1 and wafer W4 to wafer W3, wafer W5 and wafer W8. Depending on the type of wafer, the parameters to be tested may also be different. By placing all the preset measurement parameter values in the same operating interface at one time, the entire process can be automated. In the present embodiment, only the measurement parameter value is changed (i.e., from the first position map 210 to the second position map 220), and the measurement temperature is not changed. But in actual application, this is a many-to-many arrangement combination, and the order of changing the measurement parameter values and measuring temperature can be changed according to the test requirements.

Referring to FIG. 5 , the measurement parameter value is then changed (i.e., from the second position map 220 to the third position map 230) and the measurement temperature is changed (i.e., from the first temperature 310 to the second temperature 320 in FIG. 5 ), and the measurement is repeated on wafers W2 and W6 according to the measurement parameter value and the measurement temperature to obtain the measurement result. Changing the measurement parameter value and the measurement temperature includes setting another measurement position map of the operation interface. In some embodiments, before changing the measurement temperature, the probe card 132 is first allowed to leave the wafer to be measured (e.g., wafer W2). In the present embodiment, this process is automatically set. Since a plurality of preset measurement parameter values are pre-set in the same operation interface, setting another measurement position map does not need to be manually changed.

Referring to FIG. 6 , the measurement parameter values (i.e., from the third position map 230 to the fourth position map 240) and the measurement temperature (i.e., from the second temperature 320 to the third temperature 330 in FIG. 6 ) and the steps of measuring on wafers W7, W9, and W10 can be repeated until all wafers are measured under the conditions to be measured (e.g., the specified measurement position map and measurement temperature). The fifth position map 250 and the sixth position map 260 shown in FIGS. 3 to 6 are not used in this embodiment, but in other embodiments, the fifth position map 250 or the sixth position map 260 can also be used to measure the wafer to be measured (e.g., wafer W5). The number of wafers to be tested shown in FIGS. 3 to 6 is ten, but the present disclosure is not limited thereto, and for example, a greater or lesser number of wafers may be used for measurement. Furthermore, a wafer (such as wafer W1) may be measured more than once using different measurement parameter values and measurement temperatures to obtain measurement results at different measurement temperatures.

In summary, since the measurement parameter values and temperature are set, and all the preset measurement parameter values and temperature are pre-set in the same operation interface, the wafer measurement can be fully automated without the need for personnel to manually adjust the measurement parameter values and the temperature of the heating and cooling system, achieving a more convenient measurement effect.

The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to achieve the same purpose and/or achieve the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and modifications here without departing from the spirit and scope of the present disclosure.

100: Wafer tester 110: Tester 120: Heating and cooling system 130: Probe station 132: Probe card 210: First position diagram 220: Second position diagram 230: Third position diagram 240: Fourth position diagram 250: Fifth position diagram 260: Sixth position diagram 310: First temperature 320: Second temperature 330: Third temperature 340: Fourth temperature W,W1,W2,W3,W4,W5,W6,W7,W8,W9,W10: Wafer

The disclosure is best understood from the following embodiments when read in conjunction with the accompanying illustrations. Note that various features are not drawn to scale in accordance with standard practice in the industry. In fact, the sizes of various features may be increased or decreased arbitrarily for clarity of discussion. FIG. 1 illustrates a flow chart of a wafer testing method according to one embodiment of the disclosure. FIG. 2 illustrates a schematic diagram of a wafer testing machine according to one embodiment of the disclosure. FIGS. 3 to 6 illustrate process schematic diagrams of a wafer testing method according to one embodiment of the disclosure.

Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None

210: First position map

220: Second position map

230: Third position map

240: Fourth position map

250:Fifth position map

260: Sixth position map

310: First temperature

320: Second temperature

330: The third temperature

340: The fourth temperature

W1,W2,W3,W4,W5,W6,W7,W8,W9,W10: Wafer

Claims (10)

A wafer measurement method comprises the following steps: (a) setting a measurement parameter value; (b) setting a measurement temperature; (c) using a probe card to measure a first wafer according to the measurement parameter value and the measurement temperature to obtain a measurement result; (d) changing the measurement parameter value but not changing the measurement temperature, and repeating step (c) on a second wafer to obtain another measurement result; (e) changing the measurement parameter value and the measurement temperature, and repeating step (c) on a third wafer. The wafer measurement method as described in claim 1, wherein using the probe card to measure the first wafer according to the measurement parameter value and the measurement temperature includes using the probe card to provide a measurement signal to the first wafer. The wafer measurement method as described in claim 1 further includes: before step (a) is performed, setting a plurality of preset measurement parameter values in the same operation interface, wherein the measurement parameter value is one of the preset measurement parameter values. The wafer measurement method as described in claim 1, wherein setting the measurement parameter value includes: setting a measurement position map of an operation interface. The wafer measurement method as described in claim 4, wherein changing the measurement parameter value and the measurement temperature includes: setting another measurement position map of the operation interface. The wafer measurement method as described in claim 4, wherein the measurement position map corresponds to the position where the probe is stuck on the first wafer, the second wafer or the third wafer to contact the first wafer, the second wafer or the third wafer respectively. The wafer measurement method as described in claim 1, wherein when the probe card is used to measure the first wafer according to the measurement parameter value and the measurement temperature to obtain the measurement result, the measurement temperature remains unchanged. The wafer measurement method as described in claim 1, wherein the probe card is used to measure the first wafer according to the measurement parameter value and the measurement temperature to obtain the measurement result using a probe station. A wafer measurement method as described in claim 1, wherein the measurement temperature is set by using flowing air for heating and cooling. A wafer measurement method as described in claim 1, wherein the measurement temperature is in the range of -50 degrees Celsius to 150 degrees Celsius.

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