TWI871503B - Optoelectronic semiconductor device - Google Patents

Abstract

An optoelectronic semiconductor device, including an epitaxial structure; a first insulating structure overlying the epitaxial structure, and in a cross-section view, the first insulating structure including a plurality of first insulating portions separated from each other and a plurality of first openings, each of the first openings is between two adjacent first insulating portions; a contact structure covering the epitaxial structure a first conductive layer overlying the contact structure and on the first insulating structure; and a second insulating structure overlying the first conductive layer, and in a cross section view, the second insulating structure including a plurality of second insulating portions separated from each other and a plurality of second openings, each of the second openings is between two adjacent second insulating portions, and the second insulating portions corresponding to a location of the first insulating portions.

Description

Optoelectronic semiconductor components

The present disclosure relates to semiconductor devices, and in particular to a photoelectric semiconductor device.

Semiconductor components have a wide range of uses, and the development and research of related materials are also ongoing. For example, III-V semiconductor materials containing group III and group V elements can be applied to various optoelectronic semiconductor components such as light-emitting chips (e.g., light-emitting diodes or laser diodes), light-absorbing chips (photodetectors or solar cells) or non-light-emitting chips (e.g., power components of switches or rectifiers), which can be used in lighting, medical, display, communication, sensing, power supply systems and other fields. With the development of technology, there are still many technical research and development needs for optoelectronic semiconductor components. Although existing optoelectronic semiconductor components generally meet various needs, they are not satisfactory in all aspects and still need further improvement.

The disclosed embodiment provides a photoelectric semiconductor element, comprising an epitaxial structure; a first insulating structure covering the epitaxial structure and comprising a plurality of first insulating portions and a plurality of first openings separated from each other from a cross-sectional view, wherein the first opening is located between two adjacent first insulating portions; a contact structure covering the epitaxial structure; a first conductive layer covering the contact structure and the first insulating structure; and a second insulating structure covering the first conductive layer and comprising a plurality of second insulating portions and a plurality of second openings separated from each other from a cross-sectional view, wherein the second opening is located between two adjacent second insulating portions, and the second insulating portion corresponds to the position of the first insulating portion.

The disclosed embodiment provides a photoelectric semiconductor device, comprising an epitaxial structure; a first insulating structure covering the epitaxial structure and comprising a plurality of first insulating portions and a plurality of first openings separated from each other from a cross-sectional view, wherein the first opening is located between two adjacent first insulating portions; a contact structure covering the epitaxial structure; a first conductive layer covering the contact structure; structure and the first insulating structure; and a second insulating structure covering the first conductive layer and including a plurality of second insulating portions and a plurality of second openings separated from each other from a cross-sectional view, the second openings being located between two adjacent second insulating portions, and the second insulating portion having a first portion overlapping the contact structure and a second portion not overlapping the contact structure.

10: Optoelectronic semiconductor components

20: Optoelectronic semiconductor components

21:Packaging substrate

22:Through hole

23: Carrier

23a: The first part of the carrier

23b: The second part of the carrier

25:Joining line

26: Contact electrode

26a: First contact pad

26b: Second contact pad

28: Packaging layer

30: Optoelectronic semiconductor components

40: Optoelectronic semiconductor components

50: Optoelectronic semiconductor components

60: Optoelectronic semiconductor components

70:Semiconductor components

80:Sensor module

100: Base

110:Joint structure

120: Contact structure

120a: Contact part

120a1: first lower surface

125: First insulation structure

125a: First insulating part

125a1: Second lower surface

126: First opening

130: First conductive layer

135: Second insulation structure

135a: Second insulation section

135a1: The first part of the second insulating section

135a2: The second part of the second insulating section

136: Second opening

140: Second conductive layer

145:Reflective layer

150: The third conductive layer

155: The third insulation structure

155a: The third insulated section

200: Epitaxial structure

201: First semiconductor structure

202: Second semiconductor structure

203: Active zone

300: First electrode

301: first electrode pad

302: Extension electrode

400: Second electrode

811: First semiconductor element

812: Outgoing light

820:Carrier

821: The first barrier

822: The second barrier

823: The third barrier

824:Carrier board

825: First Space

826: Second Space

831: Second semiconductor element

832: Incident light

A: Box

B: Box

A-A’: section line

E1: Edge

E2: Edge

L1: light emitting surface

L2: Contact surface

R: Reflection structure

S: Surface

S ₁ : First surface

_S2 : Second surface

S ₃ : Third surface

W1: First width

W2: Second width

W3: Third width

W4: Fourth width

W5: Fifth width

The present disclosed embodiments are best understood from the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the sizes of various components may be arbitrarily enlarged or reduced to clearly show the features of the present disclosed embodiments.

FIG. 1 is a schematic cross-sectional view of a photoelectric semiconductor device according to an embodiment of the present disclosure.

FIG. 2 is a partial cross-sectional schematic diagram showing the position of the optoelectronic semiconductor element corresponding to the box A in FIG. 1 according to another embodiment of the present disclosure.

FIG. 3 is a partial cross-sectional schematic diagram showing the position of the optoelectronic semiconductor element corresponding to the box A in FIG. 1 according to an embodiment of the present disclosure.

FIG. 4 is a partial cross-sectional schematic diagram showing the position of the optoelectronic semiconductor element corresponding to the box A in FIG. 1 according to an embodiment of the present disclosure.

FIG. 5 is a partial cross-sectional schematic diagram showing the position of the optoelectronic semiconductor element corresponding to the box A in FIG. 1 according to an embodiment of the present disclosure.

FIG. 6 is a partial cross-sectional schematic diagram showing the position of the optoelectronic semiconductor element corresponding to the box A in FIG. 1 according to an embodiment of the present disclosure.

FIG. 7A is a schematic top view of a portion of a photoelectric semiconductor element according to an embodiment of the present disclosure.

FIG. 7B is a partial top view schematic diagram showing the position of the optoelectronic semiconductor element corresponding to the box B in FIG. 7A according to an embodiment of the present disclosure.

Figure 8 is a schematic diagram of the cross-sectional structure of a semiconductor component according to an embodiment of the present disclosure.

Figure 9 is a schematic diagram of a partial cross-sectional structure of a sensing module according to an embodiment of the present disclosure.

The following disclosure provides a number of embodiments or examples for implementing different elements of the subject matter provided. Specific examples of each element and its configuration are described below to simplify the description of the disclosed embodiments. Of course, these are merely examples and are not intended to limit the disclosed embodiments. For example, if the description refers to a first element formed on a second element, it may include an embodiment in which the first and second elements are directly in contact, and it may also include an embodiment in which an additional element is formed between the first and second elements so that they are not in direct contact.

Furthermore, spatially relative terms such as "under", "below", "lower", "above", "higher" and the like may be used to facilitate the description of the relationship between one (or more) parts or features and another (or more) parts or features in the diagram. Spatially relative terms are used to include different orientations of the device in use or operation, as well as the orientations described in the diagram. When the device is turned to a different orientation (rotated 90 degrees or other orientations), the spatially relative adjectives used will also be interpreted according to the orientation after the rotation.

Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as understood by a person of ordinary skill in the art to which the present disclosure belongs. It should be understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present disclosure.

The composition, dopant and defects of each layer of the semiconductor device disclosed herein can be analyzed by any suitable method, such as secondary ion mass spectrometer (SIMS), transmission electron microscopy (TEM) or scanning electron microscope (SEM); the thickness of each layer can also be analyzed by any suitable method, such as transmission electron microscope or scanning electron microscope.

Generally speaking, in optoelectronic semiconductor devices, due to the difference in refractive index between the insulating structure and the semiconductor layer, the larger the coverage area of the insulating structure on the semiconductor layer, the greater the ability of the insulating structure to reflect light. However, an insulating structure with too large a coverage area may also cause the optoelectronic semiconductor device to have fewer current paths, thereby increasing the forward bias of the optoelectronic semiconductor device. According to the disclosed embodiment, the optoelectronic semiconductor device has two or more layers of patterned insulating structures, the coverage rate C of the insulating structure is increased, and the design of the conductive layer is used to increase the current spread, thereby increasing the device brightness and maintaining the forward bias, and improving the electro-optical conversion efficiency (wall-plug efficiency; WPE).

The optoelectronic semiconductor element disclosed herein may include a light-emitting chip (e.g., a light-emitting diode or a laser diode), a light-absorbing chip (e.g., a photodetector or a solar cell), or a non-light-emitting chip (e.g., a power element of a switch or a rectifier). The laser diode may be a vertical-cavity surface-emitting laser diode (VCSEL). In the various schematic diagrams and exemplary embodiments described below, similar element symbols are used to represent similar elements.

FIG. 1 is a schematic cross-sectional view of a photoelectric semiconductor element 10 according to an embodiment of the present disclosure. In the present embodiment, the photoelectric semiconductor element 10 includes a substrate 100, a bonding structure 110, a reflective structure R, an epitaxial structure 200, a first electrode 300, and a second electrode 400. In various embodiments of the present disclosure, the upper and lower order of the elements in various schematic diagrams does not represent the order in which they are formed.

Continuing with FIG. 1, the epitaxial structure 200 is located above the substrate 100. The epitaxial structure 200 has a light-emitting surface L1, and the first electrode 300 and the second electrode 400 are respectively located on the upper and lower sides of the epitaxial structure 200. The first electrode 300 includes a first electrode pad (refer to FIG. 7A) and an extended electrode 302. Specifically, the first electrode 300 is located on a side of the epitaxial structure 200 close to the light-emitting surface L1, and the second electrode 400 is located on a side close to the substrate 100 and away from the light-emitting surface L1.

The epitaxial structure 200 may include a double heterostructure (DH), a double-side double heterostructure (DDH), a quantum dot (QD), or a multiple quantum wells (MQW) structure. In some embodiments, the epitaxial structure 200 is a multiple quantum well structure. In this embodiment, the epitaxial structure 200 includes a first semiconductor structure 201, a second semiconductor structure 202, and an active region 203. The light emitting surface L1 of the epitaxial structure 200 is the surface of the second semiconductor structure 202. The active region 203 is located between the first semiconductor structure 201 and the second semiconductor structure 202. The first semiconductor structure 201 and the second semiconductor structure 202 may have different conductivity types, thereby providing electrons and holes, or holes and electrons, respectively. In the present embodiment, the first semiconductor structure 201, the second semiconductor structure 202, and the active region 203 may respectively include III-V semiconductor materials, such as: III-V semiconductor materials including aluminum (Al), gallium (Ga), arsenic (As), phosphorus (P), indium (In), or nitrogen (N). Specifically, in this embodiment, the III-V semiconductor material can be a binary compound semiconductor (such as GaAs, GaP, or GaN), a ternary compound semiconductor (such as InGaAs, AlGaAs, InGaP, AlInP, InGaN, or AlGaN), or a quaternary compound semiconductor (such as AlGaInAs, AlGaInP, AlInGaN, InGaAsP, InGaAsN, or AlGaAsP). In this embodiment, the light-emitting surface L1 has an average roughness ranging from 0.1 microns to 2 microns. The above average roughness can reduce the reflection of the light emitted by the active region 203 on the light-emitting surface L1, and improve the light-emitting efficiency of the optoelectronic semiconductor element 10.

In this embodiment, the optoelectronic semiconductor element 10 is a light-emitting element, and when the optoelectronic semiconductor element 10 is in operation, the current can be conducted in the optoelectronic semiconductor element 10 through the first electrode 300 and the second electrode 400, so that the carriers (e.g., electrons and holes) are recombined in the active region 203, and the energy is released in the form of light energy, that is, light is emitted. The light can be emitted from the active region 203 toward the same direction (light emitting surface L1) of the optoelectronic semiconductor element 10 through the reflective structure R.

The light emitted by the active region 203 includes visible light or invisible light. The wavelength of the light emitted by the optoelectronic semiconductor element 10 depends on the material composition of the active region 203. The material of the active region 203 may include InGaAs, AlGaAsP or GaAsP, InGaAsP, AlGaAs, AlGaInAs, InGaP or AlGaInP. For example: the active region 203 can emit infrared light with a peak wavelength of 700 to 1700nm, red light with a peak wavelength of 610nm to 700nm, or yellow light with a peak wavelength of 530nm to 600nm. In this embodiment, the active region 203 emits red light with a peak wavelength of 610nm to 700nm.

In this embodiment, the active region 203 may include one or more pairs of semiconductor stacks (not shown) formed by stacking barrier layers and well layers, and each pair of semiconductor stacks may have the same or different material compositions and energy barriers.

The substrate 100 can be used to support the epitaxial structure 200 thereon. In the present embodiment, the substrate 100 may include a semiconductor material, such as gallium arsenide (GaAs), indium phosphide (InP), silicon carbide (SiC), gallium phosphide (GaP), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), iodine phosphide (IP), zinc selenide (ZnSe), gallium arsenide phosphide (GaAsP), germanium (Ge), or silicon (Si). In the present embodiment, the substrate 100 is a silicon substrate.

The first electrode 300 and the second electrode 400 can be used to electrically connect to an external power source. The first electrode 300 and the second electrode 400 can include the same or different materials, for example, metal oxide materials, metals or alloys. The metal oxide material includes but is not limited to indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO), or indium zinc oxide (IZO). Metals may include germanium (Ge), benzium (Be), zinc (Zn), gold (Au), platinum (Pt), titanium (Ti), aluminum (Al), nickel (Ni), or copper (Cu). The alloy may include at least two selected from the group consisting of the above metals, such as germanium gold nickel (GeAuNi), benzium gold (BeAu), germanium gold (GeAu), or zinc gold (ZnAu).

In this embodiment, the reflective structure R of the optoelectronic semiconductor device 10 includes a first insulating structure 125, a reflective layer 145, and a second insulating structure 135 located between the first insulating structure 125 and the reflective layer 145. The first insulating structure 125 and the second insulating structure 135 are patterned structures. The patterned first insulating structure 125 and the second insulating structure 135 can increase the current spreading of the optoelectronic semiconductor element 10 by using their insulating properties. The difference in refractive index between the first insulating structure 125 and the second insulating structure 135 and the epitaxial structure 200 can also be used to increase the probability of total reflection of light, thereby increasing the amount of light reflected to the light-emitting surface L1, thereby increasing the brightness of the optoelectronic semiconductor element 10.

From the cross-sectional view, the first insulating structure 125 has a plurality of first insulating portions 125a separated from each other and a plurality of first openings 126, the first openings 126 are disposed between two adjacent first insulating portions 125a, and each first opening 126 has a first width W1. Similarly, the second insulating structure 135 has a plurality of second insulating portions 135a separated from each other and a plurality of second openings 136, the second openings 136 are disposed between two adjacent second insulating portions 135a. Each second opening 136 has a second width W2 which is the same as or different from the first width W1. In this embodiment, the second width W2 is smaller than the first width W1, and the plurality of first openings 126 are located at the plurality of second openings 136, that is, the plurality of second insulating portions 135a correspond to the positions of the plurality of first insulating portions 125a. When viewed from above, the first insulating structure 125 is a continuous layered structure, which is patterned due to the plurality of first openings 126; when viewed from above, the second insulating structure 135 is also a continuous layered structure, which is patterned due to the plurality of first openings 126, which will be described in detail later in FIGS. 7A and 7B. The plurality of first insulating portions 125a each have a third width W3, and the plurality of second insulating portions 135a each have a fourth width W4 which is the same as or different from the third width W3. In this embodiment, the fourth width W4 is greater than the third width W3; in another embodiment, the fourth width W4 is less than the third width W3.

In this embodiment, the reflective structure R selectively further includes a contact structure 120, a first conductive layer 130 and/or a second conductive layer 140. The contact structure 120 covers the epitaxial structure 200 and includes a plurality of contact portions 120a located in a plurality of first openings 126; the first conductive layer 130 is located between the first insulating structure 125 and the second insulating structure 135; and the second conductive layer 140 is filled in a plurality of second openings 136.

In this embodiment, the first insulating structure 125 may include an insulating material with a refractive index less than 2.5, such as silicon nitride ( _SiNx ), aluminum oxide ( _AlOx ), silicon oxide ( _SiOx ), magnesium fluoride ( _MgFx ), or a combination thereof. In this embodiment, the first insulating structure 125 includes an insulating material with a refractive index less than 1.7, for example, the first insulating structure 125 includes magnesium fluoride ( _MgF2 ). In the present embodiment, since there is a large refractive index difference between the first insulating structure 125 and the first semiconductor structure 201 (for example, the refractive index difference is greater than 1.5), the critical angle of the interface between the first semiconductor structure 201 and the first insulating structure 125 is smaller than the critical angle of the interface between the first semiconductor structure 201 and the contact structure 120. Therefore, when the light emitted by the active region 203 is emitted toward the first insulating structure 125, the probability of total reflection at the interface between the first semiconductor structure 201 and the first insulating structure 125 is increased, and the probability of the light emitted by the active region 203 being refracted and penetrating the first insulating structure 125 is reduced. On the other hand, the first insulating structure 125 can also prevent the current from being directly conducted from the bottom of the first electrode 300, thereby increasing the current spreading. In this embodiment, the thickness of the first insulating structure 125 is 200 angstroms to 2500 angstroms, such as 250 angstroms; the thickness of the second insulating structure 135 is 300 angstroms to 2800 angstroms, such as 800 angstroms.

In detail, the contact structure 120 is located on a side of the epitaxial structure 200 away from the light-emitting surface L1, and is in direct contact with the first semiconductor structure 201. In this embodiment, the plurality of contact portions 120a are also in direct contact with the first conductive layer 130. In this embodiment, the first electrode 300 and the plurality of contact portions 120a are mutually offset in a direction perpendicular to the substrate, thereby increasing current spreading and further improving the light-emitting efficiency of the optoelectronic semiconductor element 10. In this embodiment, the material of the plurality of contact portions 120a may include, for example, a III-V semiconductor material, such as GaAs, GaP, or GaN. The contact structure 120 and the first semiconductor structure 201 may be made of the same semiconductor material and both have a first dopant. The first dopant concentration in the contact structure 120 is greater than the first dopant concentration in the first semiconductor structure 201, thereby obtaining a lower contact resistance. For example, the doping concentration of the contact structure 120 is 5×10 ¹⁷ /cm ³ to 1×10 ²⁰ /cm ³ .

In this embodiment, the plurality of contact structures 120 and the first insulating structure 125 are substantially coplanar on the light-emitting surface L1 of the remote epitaxial structure 200. In other words, the plurality of contact structures 120 and the first insulating structure 125 are disposed on the same layer, thereby increasing the flatness of the subsequently stacked film layers (e.g., the first conductive layer 130, the second conductive layer 140, or the reflective layer 145). For example: each of the plurality of contact portions 120a has a first lower surface 120a1 away from the light-emitting surface L1, and each of the plurality of insulating structures 125a has a second lower surface 125a1 away from the light-emitting surface L1, and the first lower surface 120a1 and the second lower surface 125a1 are substantially coplanar.

In this embodiment, the first conductive layer 130 covers the contact structure 120 and the first insulating structure 125. As mentioned above, since the plurality of contact portions 120 and the first insulating structure 125 are disposed in the same layer, the first conductive layer 130 is a flat film layer. The first conductive layer 130 is in direct contact with the contact structure 120 and forms an electrical connection. The first conductive layer 130 may include a transparent conducting oxide (TCO) material, including but not limited to indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), zinc oxide (ZnO), phosphite indium oxide (ICO), indium tungsten oxide (IWO), indium titanium oxide (ITiO), indium zinc oxide (IZO), indium gallium oxide (IGO), gallium aluminum zinc oxide (GAZO), or a combination thereof. The second conductive layer 140 is located between the first conductive layer 130 and the reflective layer 145, and contacts the first conductive layer 130 through a plurality of second openings 136. The second conductive layer 140 may include a transparent conductive oxide material that is the same as or different from the first conductive layer 130. In the present embodiment, the material of the first conductive layer 130 is indium tin oxide (ITO), and the second conductive layer 140 is indium zinc oxide (IZO). The second conductive layer 140 may be optionally planarized to have a flat surface S, so that the reflective layer 145 subsequently stacked thereon has high flatness, thereby improving the overall reflective ability of the reflective structure R. In the present embodiment, the planarization process may include chemical mechanical polishing (CMP). The thickness of the first conductive layer 130 and the thickness of the second conductive layer 140 may be the same or different. In this embodiment, the thickness of the second conductive layer 140 is greater than the thickness of the first conductive layer 130. The thickness of the first conductive layer 130 is 50 angstroms to 200 angstroms, and the thickness of the second conductive layer 140 is 2000 angstroms to 5000 angstroms.

In this embodiment, the second insulating structure 135 may have the same material as the first insulating structure 125 described above, for example, the first insulating structure 125 and the second insulating structure 135 are both magnesium fluoride (MgF ₂ ) or both silicon oxide (SiO _x ); in other embodiments, the first insulating structure 125 and the second insulating structure 135 are different materials, for example, the first insulating structure 125 is magnesium fluoride (MgF ₂ ) and the second insulating structure 135 is silicon oxide (SiO _x ) or the first insulating structure 125 is silicon oxide (SiO _x ) and the second insulating structure 135 is magnesium fluoride (MgF ₂ ). In another embodiment, the first insulating structure 125 and/or the second insulating structure 135 is non-conductive and includes a distributed Bragg reflector structure (DBR), and is formed by alternately stacking two or more insulating materials, such as silicon nitride ( _SiNx ), aluminum oxide ( _AlOx ), silicon oxide ( _SiOx ), magnesium fluoride ( _MgFx ), titanium oxide ( _TiO2 ) or _niobium oxide ( _Nb2O5 ).

As mentioned above, the second insulating structure 135 has a plurality of second insulating portions 135a separated from each other, and a plurality of second openings 136 are provided between two second insulating portions 135a, and the positions of the plurality of second openings 136 roughly correspond to the positions of the plurality of contact portions 120a. In this embodiment, since the plurality of second insulating portions 135a each have a fourth width W4 greater than the third width W3 of the plurality of first insulating portions 125a, the second insulating structure 135 is designed to cover more epitaxial structure 200 than the first insulating structure 125 to increase the area of reflected light. Specifically, when light enters the reflective structure R from the active region 203, part of the light is reflected by the first insulating structure 125, and part of the light passes through the first insulating structure 125 and/or the contact structure 120. Similarly, due to the difference in refractive index between the second insulating structure 135 and the first conductive layer 130 (for example, the difference in refractive index is greater than 0.3), the first conductive layer 130 and the second insulating structure 135 are not reflected by the first conductive layer 130. The critical angle of the interface between the first conductive layer 130 and the second conductive layer 140 is smaller than the critical angle of the interface between the first conductive layer 130 and the second conductive layer 140. Therefore, by providing the second insulating structure 135, the probability of the light penetrating the first insulating structure 125 and/or contacting the structure 120 being totally reflected at the interface between the first conductive layer 130 and the second insulating structure 135 is increased, thereby increasing the light extraction efficiency. In one embodiment, when the reflective structure R does not have the first conductive layer 130, similarly, due to the refractive index difference between the second insulating structure 135 and the contact structure 120 (for example, the refractive index difference is greater than 1.5), the critical angle of the interface between the contact structure 120 and the second insulating structure 135 is smaller than the critical angle of the interface between the contact structure 120 and the second conductive layer 140. Therefore, the second insulating structure 135 can increase the light extraction efficiency of the optoelectronic semiconductor element 10.

×100%。在本實施例中，由於第二絕緣結構135對位於第一絕緣結構125，且各第二絕緣部135a的第四寬度W4大於各第一絕緣部125a的第三寬度W3，因此，第二面積A2等於第四面積AO1，絕緣結構覆蓋率C的計算方式可以簡化為

×100%。 In this embodiment, the orthographic projection area of the second insulating structure 135 in the direction of the epitaxial structure 200 is larger than the orthographic projection area of the first insulating structure 125 in the direction of the epitaxial structure 200 . In detail, the epitaxial structure 200 has a contact surface L2 opposite to the light emitting surface L1, the contact surface L2 has a first area A1, the plurality of first insulating portions 125a each have a first surface _S1 facing the contact surface L2, the sum of the first surfaces _S1 of the plurality of first insulating portions 125a is a second area A2; and the plurality of second insulating portions 135a each have a second surface _S2 facing the contact surface L2, the sum of the second surfaces _S2 of the plurality of second insulating portions 135a is a third area A3, and the overlapping area of the plurality of first insulating portions 125 and the plurality of second insulating portions 135 has a fourth area AO1, wherein A2<A3<A1. In one embodiment, the insulating structure coverage C is between 80% and 98%, for example, between 90% and 98%, or between 95% and 97%. The above-mentioned "insulating structure coverage C" is the ratio of the first insulating structure 125 and the second insulating structure 135 covering the contact surface L2 of the epitaxial structure 200, and is calculated as follows:

× 100%. In this embodiment, since the second insulating structure 135 is opposite to the first insulating structure 125, and the fourth width W4 of each second insulating portion 135a is greater than the third width W3 of each first insulating portion 125a, the second area A2 is equal to the fourth area AO1, and the calculation method of the insulating structure coverage C can be simplified as follows:

×100%.

The reflective layer 145 can reflect the light emitted by the active area 203, so that the light is emitted toward the light-emitting surface L1 outside the optoelectronic semiconductor element 10. In this embodiment, the reflective layer 145 can be conductive and include semiconductor materials, metals or alloys. The semiconductor material can include III-V semiconductor materials, such as binary, ternary or quaternary III-V semiconductor materials. The metal includes but is not limited to copper (Cu), aluminum (Al), tin (Sn), gold (Au) or silver (Ag). The alloy can include at least two selected from the group consisting of the above metals. In other embodiments, the reflective layer 145 may also include a distributed bragg reflector structure (DBR), which is formed by alternately stacking two or more semiconductor materials with different refractive indices, such as AlAs/GaAs, AlGaAs/GaAs, or InGaP/GaAs. In this embodiment, the material of the reflective layer 145 is metal to obtain a reflective structure R with high reflectivity.

The bonding structure 110 is used to bond the substrate 100 and the reflective structure R. The bonding structure 110 can be a single-layer or multi-layer structure. The epitaxial structure 200 is shown in FIG. 1 as being located above the substrate 100, but the epitaxial structure 200 and the reflective structure R of this embodiment are first formed on another growth substrate (not shown) and then invertedly bonded to the substrate 100. In other words, the epitaxial structure 200, the contact structure 120, the first insulating structure 125, the first conductive layer 130, the second insulating structure 135, the second conductive layer 140, and the reflective layer 145 are formed on the growth substrate, and then bonded to the substrate 100 through the bonding structure 110, and then the growth substrate is removed. The material of the bonding structure 110 may include a transparent oxide material, a metal or an alloy. The transparent oxide material includes but is not limited to indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), zinc oxide (ZnO), indium caerium oxide (ICO), indium tungsten oxide (IWO), indium titanium oxide (ITiO), indium zinc oxide (IZO), indium gallium oxide (IGO), gallium aluminum zinc oxide (GAZO) or a combination of the above materials. The metal includes but is not limited to indium (In), copper (Cu), aluminum (Al), tin (Sn), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), platinum (Pt) or tungsten (W). The alloy may include at least two selected from the group consisting of the above metals.

In summary, the optoelectronic semiconductor device 10 includes a reflective structure R having a first insulating structure 125, a first conductive layer 130, and a second insulating structure 135. On the one hand, the current spreading of the optoelectronic semiconductor device 10 is increased by configuring the patterned first insulating structure 125, the patterned second insulating structure 135, and the first conductive layer 130; on the other hand, the second insulating structure 135 increases the area covered by the epitaxial structure 200, so that the probability of total reflection of light is increased, thereby improving the reflective ability of the reflective structure R.

FIG. 2 is a partial cross-sectional schematic diagram of the position of the optoelectronic semiconductor element 20 corresponding to the box A in FIG. 1 according to another embodiment of the present invention. The optoelectronic semiconductor element 20 has similar components and relative positional relationships of the components as the optoelectronic semiconductor element 10, and the main difference is that the optoelectronic semiconductor element 20 further includes a third insulating structure 155 and optionally includes a third conductive layer 150. The third insulating structure 155 includes a plurality of third insulating portions 155a separated from each other, and each third insulating portion 155a is roughly aligned with each second opening 136 and/or first opening 126, so that the light emitted by the active area 203 can be totally reflected at the interface of the third insulating structure 155, thereby forming a more comprehensive reflection structure R. Specifically, when light is incident from the active region 203 into the reflective structure R, part of the light is reflected by the first insulating structure 125, and part of the light passes through the first insulating structure 125 and/or the contact structure 120. Then, of the light passing through the first insulating structure 125 and/or the contact structure 120, part of it is reflected by the second insulating structure 135, and part of it passes through the second insulating structure 135 and/or the second conductive structure 120. Similarly, since there is a refractive index difference between the second conductive layer 140 and the third insulating structure 155 (for example, the refractive index difference is greater than 0.3), the critical angle of the interface between the second conductive layer 140 and the third insulating structure 155 is smaller than the critical angle of the interface between the second conductive layer 140 and the third conductive layer 150. Therefore, the light extraction efficiency can be increased by setting the third insulating structure 155.

As shown in FIG. 2 , the third conductive layer 150 covers the second conductive layer 140 and the third insulating structure 155, and is covered by the reflective layer 145. Since each second opening 136 is substantially aligned with each contact portion 120a, each third insulating portion 155a is also aligned with each contact portion 120a. In this embodiment, the third insulating structure 155 conformally covers the second conductive layer 140, and is recessed toward the first conductive layer 130 at a plurality of second openings 136 corresponding to the second insulating structure 135. In other embodiments, the surface of the second conductive layer 140 away from the first conductive layer 130 can be a flat surface, so that the surface of the third insulating structure 155 subsequently coated on the second conductive layer 140 away from the first conductive layer 130 is also a flat surface.

In this embodiment, the orthographic projection area of the third insulating structure 155 on the epitaxial structure 200 is smaller than the orthographic projection area of the first insulating structure 125 on the epitaxial structure 200, and the orthographic projection area of the third insulating structure 155 on the epitaxial structure 200 is smaller than the orthographic projection area of the second insulating structure 135 on the epitaxial structure 200; or, each of the plurality of third insulating portions 155a has a fifth width W5 that is smaller than the fourth width W4 of the plurality of second insulating portions 135a. In this embodiment, the fifth width W5 is greater than the second width W2 of the second opening 136 and less than the first width W1 of the first opening 126.

×100%。第三絕緣結構155可與第一絕緣結構125以及第二絕緣結構135具有相同或不同的材料，第三導電層150可與第一導電層130及第二導電層140具 有相同或不同的材料，例如：第一導電層130及第二導電層140具有相同材料(例如皆為銦錫氧化物(ITO))，第三導電層150具有不同材料(例如為銦鋅氧化物(IZO))。第三導電層150的厚度可以相同或不同於第一導電層130及/或第二導電層140，在本實施例中，第三導電層150的厚度大於第一導電層130且大致等於第二導電層140，第三導電層150經過平坦化處理，因而具有平坦的表面。在本實施例中，第三絕緣結構155的厚度為200埃米至2000埃米，例如250埃，第三導電層150的厚度為2000埃米至5000埃米。 Specifically, the contact surface L2 of the epitaxial structure 200 has a first area A1, each first insulating portion 125a has a first surface _S1 facing the contact surface L2, and the first surfaces _S1 of the plurality of first insulating portions 125a are summed up to a second area A2; each second insulating portion 135 has a second surface _S2 facing the contact surface L2, and the second surfaces _S2 of the plurality of second insulating portions 135 are summed up to a third area A3; each third insulating portion 155a has a third surface _S3 facing the contact surface L2, and the third surfaces _S3 of the plurality of third insulating portions 155a are summed up to a fourth area A4, and the first surface _S1 and the second surface _S2 , the first surface _S1 and the third surface S3 are summed up to a fourth area A5 _. , and the third surface _S3 and the second surface _S2 have a total overlapping area AO2; wherein A4<A2<A3<A1. In one embodiment, the insulating structure coverage C is between 85% and 100%, for example, between 90% and 100%, or between 95% and 100%. The above-mentioned "insulating structure coverage C" is the ratio of the first insulating structure 125, the second insulating structure 135, and the third insulating structure 145 covering the contact surface L2 of the epitaxial structure 200, and the calculation method is

×100%. The third insulating structure 155 may have the same or different materials as the first insulating structure 125 and the second insulating structure 135, and the third conductive layer 150 may have the same or different materials as the first conductive layer 130 and the second conductive layer 140. For example, the first conductive layer 130 and the second conductive layer 140 may have the same material (for example, both are indium tin oxide (ITO)), and the third conductive layer 150 may have a different material (for example, indium zinc oxide (IZO)). The thickness of the third conductive layer 150 may be the same as or different from the first conductive layer 130 and/or the second conductive layer 140. In the present embodiment, the thickness of the third conductive layer 150 is greater than the first conductive layer 130 and is substantially equal to the second conductive layer 140. The third conductive layer 150 is planarized to have a flat surface. In the present embodiment, the thickness of the third insulating structure 155 is 200 angstroms to 2000 angstroms, for example, 250 angstroms, and the thickness of the third conductive layer 150 is 2000 angstroms to 5000 angstroms.

FIG. 3 is a partial cross-sectional schematic diagram of a location of a photoelectric semiconductor device 30 corresponding to the box A in FIG. 1 according to an embodiment of the present disclosure. The photoelectric semiconductor device 30 has similar components and relative positional relationships of the components as the photoelectric semiconductor device 10, and the main difference is that in the photoelectric semiconductor device 30, each second insulating portion 135a is respectively located opposite to each contact portion 120a, that is, the second insulating structure 135 covers the contact structure 120. In this embodiment, each second insulating portion 135a has a fourth width W4, and the fourth width W4 is greater than the first width W1 of each first opening 126 and the second width W2 of the second opening 136. The positions of the second openings 136 and the positions of the contact portions 120a are offset from each other in the vertical direction of the substrate 100. In other words, the first opening 126 and the second opening 136 do not overlap in the direction perpendicular to the substrate 100. The second conductive layer 140 covers the second insulating structure 135 and fills a plurality of second openings 136. The optoelectronic semiconductor element 30 of this embodiment has a greater insulating structure coverage C than the optoelectronic semiconductor element 10 (for example: the insulating structure coverage C of this embodiment is substantially equal to 100%), and the offset arrangement of the first opening 126 and the second opening 136 is also beneficial to current spreading. The above-mentioned "insulating structure coverage C" can refer to the calculation method described in Figure 1.

FIG. 4 is a partial cross-sectional schematic diagram of the position of the optoelectronic semiconductor element 40 corresponding to the box A in FIG. 1 according to an embodiment of the present disclosure. The optoelectronic semiconductor element 40 has similar components and relative positional relationships of the components as the optoelectronic semiconductor element 30, and the main difference is that the first width W1 of the first opening 126 of the optoelectronic semiconductor element 40 is substantially equal to the fourth width W4 of the second insulating portion 135a, and the second width W2 of the second opening 136 is greater than the first width W1 and the fourth width W4. The optoelectronic semiconductor element 40 of this embodiment can maintain the insulating structure with a high coverage C, while reducing the current path, thereby achieving the effect of uniformly dispersing the current. In this embodiment, the insulating structure coverage C is substantially equal to 100%. The above "Insulation Structure Coverage Rate C" can refer to the calculation method described in Figure 1.

FIG. 5 is a partial cross-sectional schematic diagram showing the position of the optoelectronic semiconductor element 50 corresponding to the box A in FIG. 1 according to an embodiment of the present disclosure. The optoelectronic semiconductor element 50 has similar components and relative positional relationships of the components as the optoelectronic semiconductor element 40, and the main difference is that the second insulating structure 135 of the optoelectronic semiconductor element 50 partially overlaps with the contact portion 120a and partially does not overlap with the contact portion 120a. In detail, each second insulating portion 135a has a first portion 135a1 overlapping with the contact portion 120a in a direction perpendicular to the substrate 100, and a second portion 135a2 overlapping with the first insulating portion 125 in a direction perpendicular to the substrate 100 and does not overlap with the contact portion 120a. In this embodiment, the first width W1 of the first opening 126 of the optoelectronic semiconductor element 50 is substantially equal to the fourth width W4 of the second insulating portion 135a and is smaller than the second width W2 of the second opening 136. In other embodiments, the first width W1, the second width W2 and the fourth width W4 can also be adjusted as appropriate. In this embodiment, the insulating structure coverage C is greater than or equal to 80% and less than 100%. The above-mentioned "insulating structure coverage C" can refer to the calculation method described in Figure 1.

FIG. 6 is a partial cross-sectional schematic diagram showing the position of the optoelectronic semiconductor device 60 corresponding to the frame A in FIG. 1 according to an embodiment of the present disclosure. The optoelectronic semiconductor device 60 has similar components and relative positional relationships of the components as the optoelectronic semiconductor device 40, and the main difference is that the second insulating structure 135 of the optoelectronic semiconductor device 60 is located between the second conductive layer 140 and the reflective layer 145, and the reflective layer 145 is filled in the plurality of second openings 136 of the second insulating structure 135. In this embodiment, the position of the second opening 136 and the position of the contact portion 120a are offset from each other in a direction perpendicular to the substrate 100. In this embodiment, the first width W1 of the first opening 126 of the optoelectronic semiconductor element 60 is substantially equal to the fourth width W4 of the second insulating portion 135a and is smaller than the second width W2 of the second opening 136. In other embodiments, the first width W1, the second width W2 and the fourth width W4 can also be adjusted as appropriate. In this embodiment, if the process error is not considered, the insulating structure coverage C is equal to 100%. The above-mentioned "insulating structure coverage C" can refer to the calculation method described in Figure 1. In another embodiment, the optoelectronic semiconductor element has a structure similar to the optoelectronic semiconductor element 60, but only one conductive layer (such as the first conductive layer 130 or the second conductive layer 140) is provided between the first insulating structure 125 and the reflective layer 145.

FIG. 7A is a schematic top view of a portion of the optoelectronic semiconductor element 10 according to the embodiment of FIG. 1, and FIG. 7B is a schematic top view of a portion of the position of the box B in FIG. 7A according to the embodiment of FIG. 1, and FIG. 1 is a schematic partial cross-sectional view corresponding to the section line A-A' in FIG. 7B. For the sake of clarity, FIG. 7A and FIG. 7B only depict part of the components, for example, only the first electrode pad 301, the extended electrode 302, the first insulating structure 125, the first opening 126, the second insulating structure 135, and the second opening 136, and omit other components. In this embodiment, the optoelectronic semiconductor element 10 has two first electrode pads 301, which are respectively close to two opposite edges E1 and E2 of the optoelectronic semiconductor element 10, and a plurality of mutually parallel extension electrodes 302 are located between the edges E1 and E2. A first opening 126 and a plurality of second openings 136 are located between the two adjacent extension electrodes 302, and are located opposite to the first opening 126, as shown in FIG. 7B, where the dotted circle indicates the position corresponding to the second opening 136, and the second insulating structure 135 is located outside the second opening 136 (the distribution of the second insulating structure 135 is shown in the oblique line pattern in FIGS. 7A and 7B), and the first opening 126 of the first insulating structure 125 can correspond to the formation area of the contact structure 120. It can be seen from the top view that the second opening 136 is located in the first opening 126, and the orthographic projection area of the second insulating structure 135 on the epitaxial structure 200 (i.e., the third area A3 of the aforementioned embodiment) is larger than the orthographic projection area of the first insulating structure 125 on the epitaxial structure 200 (i.e., the second area A2 of the aforementioned embodiment).

FIG. 8 is a schematic diagram of a cross-sectional structure of a semiconductor component 70 according to an embodiment of the present disclosure. The semiconductor component 70 includes a photoelectric semiconductor element (10, 20, 30, 40, 50, or 60), a package substrate 21, a carrier 23, a bonding wire 25, a contact electrode 26, and a package layer 28. The package substrate 21 may include a ceramic or glass material. The package substrate 21 has a plurality of through holes 22. The through holes 22 may be filled with a conductive material such as metal to facilitate electrical conduction and/or heat dissipation. The carrier 23 is located on the surface of one side of the package substrate 21 and also includes a conductive material such as metal. The contact electrode 26 is located on the surface of the other side of the package substrate 21. The contact electrode 26 includes a first contact pad 26a and a second contact pad 26b, and the first contact pad 26a and the second contact pad 26b can be electrically connected to the carrier 23 through the through hole 22. In one embodiment, the contact electrode 26 can further include a thermal pad (not shown), for example, located between the first contact pad 26a and the second contact pad 26b.

The optoelectronic semiconductor element 10, 20, 30, 40, 50 or 60 is located on a carrier 23. The carrier 23 includes a first portion 23a and a second portion 23b, and the optoelectronic semiconductor element 10, 20, 30, 40, 50 or 60 is electrically connected to the second portion 23b of the carrier 23 via a bonding wire 25. The material of the bonding wire 25 may include a metal, such as gold, silver, copper, aluminum or an alloy containing at least one of the above elements. The encapsulation layer 28 covers the optoelectronic semiconductor element 10, 20, 30, 40, 50 or 60 and has the effect of protecting the optoelectronic semiconductor element. Specifically, the encapsulation layer 28 may include a resin material such as epoxy, silicone, etc. The packaging layer 28 may optionally include a plurality of wavelength conversion particles (not shown) to convert the first light emitted by the optoelectronic semiconductor element 10, 20, 30, 40, 50 or 60 into a second light. The wavelength of the second light is greater than the wavelength of the first light.

FIG. 9 is a partial cross-sectional structural diagram of a sensing module 80 according to an embodiment of the present disclosure. The sensing module 80 includes a carrier 820, a first semiconductor element 811, and a second semiconductor element 831. The first semiconductor element 811 and/or the second semiconductor element 831 may be the above-mentioned optoelectronic semiconductor element 10, 20, 30, 40, 50, or 60. The carrier 820 includes a first baffle 821, a second baffle 822, a third baffle 823, a carrier 824, a first space 825, and a second space 826. The first semiconductor element 811 is located in the space 825 between the first baffle 821 and the second baffle 822, and the second semiconductor element 831 is located in the space 826 between the second baffle 822 and the third baffle 823. The first semiconductor element 811 and/or the second semiconductor element 831 may be a vertical chip as shown in FIG. 1. The first semiconductor element 811 and the second semiconductor element 831 are located on the carrier 824 and are electrically connected to a circuit connection structure (not shown) on the carrier 824. In this embodiment, the first semiconductor element 811 is a light-emitting element, the second semiconductor element 831 is a light-receiving element, and the sensing module 80 can be placed in a wearable device (e.g., a watch, earphones). The light emitted by the first semiconductor element 811 (i.e., the outgoing light 812) passes through the skin and irradiates the body cells and blood, and then the second semiconductor element 831 absorbs the light scattered/reflected back from the body cells and blood (i.e., the incident light 832). Based on the changes in the reflected and scattered light, physiological signals of the human body, such as heart rate, blood sugar, blood pressure, blood oxygen concentration, etc., are detected.

Specifically, the optoelectronic semiconductor elements, semiconductor components and sensing modules disclosed herein can be applied to products in the fields of lighting, medical treatment, display, communication, sensing, power supply system, etc., such as lamps, monitors, mobile phones, tablet computers, car dashboards, televisions, computers, wearable devices (such as watches, bracelets, necklaces, etc.), traffic signs, outdoor displays, medical equipment, etc.

In summary, the embodiments disclosed herein provide a photoelectric semiconductor element with two or more insulating structures and/or the arrangement of the opening positions of the insulating structures and/or the width design of each insulating structure to obtain a reflective structure with a higher insulating structure coverage C for the epitaxial structure and facilitate the distribution of current in the photoelectric semiconductor element, thereby improving the brightness and maintaining the forward bias. It should be understood that not all advantages are necessarily discussed here, and not all embodiments need to have specific advantages, and other embodiments may provide different advantages.

The above summarizes the components of several embodiments so that those with ordinary knowledge in the art to which the present disclosure belongs can more easily understand the viewpoints of the embodiments of the present disclosure. Those with ordinary knowledge in the art to which the present disclosure belongs should understand that they can design or modify other processes and structures based on the embodiments of the present disclosure to achieve the same purpose and/or advantages as the embodiments introduced herein. Those with ordinary knowledge in the art to which the present disclosure belongs should also understand that such equivalent processes and structures do not violate the spirit and scope of the present disclosure, and they can make various changes, substitutions and replacements without violating the spirit and scope of the present disclosure.

10: Optoelectronic semiconductor components

100: Base

110:Joint structure

120: Contact structure

120a: Contact part

120a1: first lower surface

125: First insulation structure

125a: First insulating part

125a1: Second lower surface

126: First opening

130: First conductive layer

135: Second insulation structure

135a: Second insulation section

136: Second opening

140: Second conductive layer

145:Reflective layer

200: Epitaxial structure

201: First semiconductor structure

202: Second semiconductor structure

203: Active zone

300: First electrode

302: Extension electrode

400: Second electrode

A: Box

L1: light emitting surface

L2: Contact surface

R: Reflection structure

S: Surface

S ₁ : First surface

_S2 : Second surface

W1: First width

W2: Second width

W3: Third width

W4: Fourth width

Claims (10)

A photoelectric semiconductor element comprises: an epitaxial structure having a first surface and a second surface opposite to the first surface; a first insulating structure located on the first surface of the epitaxial structure, and in cross-section, the first insulating structure comprises a plurality of first insulating portions separated from each other and a plurality of first openings, the first opening being located between two adjacent first insulating portions; a contact structure covering the epitaxial structure; a first conductive layer, covering the contact structure and the first insulating structure; a second insulating structure, covering the first conductive layer, and from a cross-sectional view, the second insulating structure includes a plurality of second insulating portions and a plurality of second openings separated from each other, the second openings are located between two adjacent second insulating portions, and the plurality of second insulating portions correspond to the positions of the plurality of first insulating portions; a first electrode, located on the second surface of the epitaxial structure. The optoelectronic semiconductor element of claim 1 further includes a second conductive layer covering the second insulating structure and filling the plurality of second openings. The optoelectronic semiconductor device of claim 1, wherein the contact structure has a doping concentration of 5×10 ¹⁷ /cm ³ to 1×10 ²⁰ /cm ³ . The optoelectronic semiconductor element of claim 1 further comprises a second electrode, and the second insulating structure is located between the first surface of the epitaxial structure and the second electrode. As in claim 1, the optoelectronic semiconductor element, wherein, viewed from a cross-section, the first electrode and the contact structure are misaligned with each other. The optoelectronic semiconductor device of any one of claims 1 to 5 further comprises a substrate and a bonding structure located between the substrate and the second insulating structure. A photoelectric semiconductor element comprises: an epitaxial structure; a first insulating structure covering the epitaxial structure, wherein the first insulating structure comprises a plurality of first insulating portions and a plurality of first openings separated from each other in cross section, wherein the first opening is located between two adjacent first insulating portions; a contact structure covering the epitaxial structure; a first conductive layer covering the contact structure and the first insulating structure; and a second insulating structure covering the first conductive layer. layer, and from a cross-sectional view, the second insulating structure includes a plurality of second insulating portions and a plurality of second openings separated from each other, the second openings are located between two adjacent second insulating portions, and the plurality of second insulating portions have a first portion overlapping with the contact structure and a second portion not overlapping with the contact structure; a first electrode located above the epitaxial structure; and a second electrode, the epitaxial structure is located between the first electrode and the second electrode. As claimed in claim 1 or 7, the optoelectronic semiconductor element, wherein the contact structure comprises a semiconductor material, and the material of the conductive layer comprises a transparent conductive oxide. The optoelectronic semiconductor element of claim 1 or 7, wherein the first opening has a first width, and the second opening has a second width greater than, less than, or equal to the first width. As in claim 1 or 7, the optoelectronic semiconductor element, wherein the contact structure comprises a plurality of contact portions located in the plurality of first openings.

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