TWI871328B - 電壓電流變換電路以及充放電控制裝置 - Google Patents
電壓電流變換電路以及充放電控制裝置 Download PDFInfo
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Abstract
本發明的電壓電流變換電路的特徵在於包括:電壓電流變換電阻,連接於輸入端子;以及電流鏡電路,映射電壓電流變換電阻所輸出的電流,電流鏡電路包含源極的電壓被偏置成高於基板的電壓的空乏型電晶體。
Description
本發明是有關於一種電壓電流變換電路以及充放電控制裝置。
揭示了與如下內容相關的發明,即:於對二次電池的充放電進行控制的充放電控制裝置中,不根據故障部位或故障模式而自行對電路的故障進行檢測的電路、或其故障診斷方法(例如,參照專利文獻1)。
圖2是表示包括故障診斷電路的充放電控制裝置的框圖。
充放電控制裝置100包括:電壓電流變換電路11、開關12、開關15、開關16、電阻電路13、基準電壓電路14、基準電壓電路38、比較器17、比較器18、電流電壓變換電路31、運算放大器32、運算放大器35、金屬氧化物半導體(metal oxide semiconductor,MOS)電晶體33、MOS電晶體36、電阻34、電阻37、以及電流鏡電路39。
比較器17基於電阻電路13所輸出的電壓及基準電壓電路14的電壓,來對二次電池B1的過放電進行檢測。同樣地,比較器18對二次電池B1的過充電進行檢測。而且,雖然未圖示,但亦包括藉由該些比較器的訊號來對二次電池的充放電進行控制的控制電路等。
充放電控制裝置100於診斷對二次電池B1的電壓進行檢測的電路的故障的情況下,藉由電壓電流變換電路11及電流電壓變換電路31將二次電池B1的電壓變換為接地電壓基準的電壓,並藉由開關15、開關16使基於該電壓的電流流向電阻電路13,藉此對電路的故障進行檢測。運算放大器32、MOS電晶體33、電阻34構成電壓電流變換電路。同樣地,運算放大器35、增強型的MOS電晶體36、電阻37構成電壓電流變換電路。
[現有技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2018-099020號公報
[發明所欲解決之課題]
於充放電控制裝置100中,電壓電流變換電路11通常包含使用了如上所述般的運算放大器及Nch增強型MOS電晶體的電路。
然而,如上所述般的電壓電流變換電路中,當二次電池B1的電壓下降時,Nch增強型MOS電晶體的閘極電壓變低,而無法高精度地將電壓變換為電流,因此故障檢測的精度下降。
本發明提供了一種即使輸入電壓低,亦可高精度地將輸入電壓變換為電流並輸出的電壓電流變換電路。
另外,提供一種具有即使二次電池的電壓低,檢測精度亦不會下降的故障診斷功能的充放電控制裝置。
[解決課題之手段]
為了解決所述課題,本發明實施形態的電壓電流變換電路包括:電壓電流變換電阻,連接於輸入端子;以及電流鏡電路,映射 (mirror) 電壓電流變換電阻所輸出的電流,且電流鏡電路包含源極的電壓被偏置成高於基板的電壓的空乏型電晶體。
另外,本發明實施形態的充放電控制裝置包括故障診斷電路,所述故障診斷電路具有所述電壓電流變換電路、及將電壓電流變換電路的電流變換為接地端子基準的電壓的電流電壓變換電路。
[發明的效果]
根據本發明,可提供一種甚至於低電壓下亦能夠高精度地變換為電流的電壓電流變換電路。
另外,根據本發明,可提供一種具有即使為低電池電壓,檢測精度亦不會下降的故障診斷功能的充放電控制裝置。
以下,參照圖式對用於實施本發明的形態進行詳細說明。
圖1是表示本發明實施形態的電壓電流變換電路11的電路圖。
電壓電流變換電路11包括:電阻R1、電阻R2、電阻R4、作為負載電阻的電阻R3、Nch空乏型的電晶體M1、電晶體M2、高電位側的第一電壓輸入端子、低電位側的第二電壓輸入端子、以及電流輸出端子。
電阻R1的一端連接於第一電壓輸入端子,另一端連接於電晶體M1的汲極及閘極。電晶體M1的基板連接於第二電壓輸入端子,源極連接於電阻R2的一端。電阻R2的另一端連接於第二電壓輸入端子。
電阻R3的一端連接於電流輸出端子,另一端連接於電晶體M2的汲極。電晶體M2的閘極連接於電晶體M1的閘極及汲極,源極連接於電阻R4的一端,基板連接於第二電壓輸入端子。電阻R4的另一端連接於第二電壓輸入端子。
接著,對電壓電流變換電路11的運作進行說明。
電阻R1是電壓電流變換用的電阻,將第一電壓輸入端子與第二電壓輸入端子之間的電壓變換為電流。電晶體M1及電阻R2、以及電晶體M2及電阻R4構成電流鏡電路,映射電阻R1中流動的電流。
當藉由Nch空乏型電晶體構成電流鏡電路時,臨限值為負,因此即使輸入端子間的電壓變低,亦進行映射運作,但當電流少時,無法進行映射運作。圖1的電流鏡電路於電晶體M1及電晶體M2分別包括作為偏置電阻的電阻R2及電阻R4。藉由電阻R2、電阻R4將電晶體M1、電晶體M2的源極的電位偏置成高於基板的電位,因此藉由基板偏置效應,電晶體的臨限值變高。
此處,電晶體M1、電晶體M2的臨限值設定為高於0 V且低於增強型的電晶體。藉由以如上方式設定臨限值,即使輸入端子間的電壓變低,於少的電流下,圖1的電流鏡電路亦可進行映射運作。
作為負載電阻的電阻R3是以電晶體M1與電晶體M2的汲極電壓大致相等的方式設置。於電阻R3中流動的電流成為輸出電流。
如以上所說明般,電壓電流變換電路11中,藉由Nch空乏型的電晶體M1、電晶體M2及將其源極電壓偏置成高於基板的電壓的電阻R2、電阻R4構成電流鏡電路,因此可將臨限值設定為高於0 V且低於增強型的電晶體。因此,即使輸入端子間的電壓變低,亦可高精度地將其電壓變換為電流。
圖2是表示包括故障診斷電路的充放電控制裝置100的框圖。
充放電控制裝置100包括:電壓電流變換電路11、電壓電流變換電路21、開關12、開關15、開關16、開關22、開關25、開關26、電阻電路13、電阻電路23、基準電壓電路14、基準電壓電路24、基準電壓電路38、比較器17、比較器18、比較器27、比較器28、電流電壓變換電路31、運算放大器32、運算放大器35、MOS電晶體33、MOS電晶體36、電阻34、電阻37、以及電流鏡電路39。
比較器17基於電阻電路13所輸出的電壓及基準電壓電路14的電壓,來對二次電池B1的過放電進行檢測。同樣地,比較器18對二次電池B1的過充電進行檢測。比較器27基於電阻電路23所輸出的電壓及基準電壓電路24的電壓,來對二次電池B2的過放電進行檢測。同樣地,比較器28對二次電池B2的過充電進行檢測。而且,雖然未圖示,但亦包括藉由該些比較器的訊號來對二次電池的充放電進行控制的控制電路等。
充放電控制裝置100於診斷對二次電池B1的電壓進行檢測的電路的故障的情況下,以如下般運作。
電壓電流變換電路11及電流電壓變換電路31將二次電池B1的電壓變換為接地電壓基準的電壓。運算放大器32、運算放大器35、MOS電晶體33、MOS電晶體36、電阻34、電阻37、以及電流鏡電路39生成基於其電壓的故障診斷用的電流,並藉由開關15或開關16使其流向電阻電路13。比較器17、比較器18基於此時的電阻電路13的電壓來對電路的故障進行檢測。
圖3為表示可用於圖2的充放電控制裝置的本發明實施形態的電壓電流變換電路及電流電壓變換電路的電路圖。如圖3所示,電壓電流變換電路11與電流電壓變換電路31當藉由電流鏡電路連接時,可構成電壓的基準電位變換電路。
電壓電流變換電路11與圖1為相同的構成,因此省略說明。
電流電壓變換電路31包括:電阻R5、電阻R6、以及Nch空乏型的電晶體M3。電阻R5的一端連接於電流鏡電路的輸出端子,另一端連接於電晶體M3的汲極及閘極。電晶體M3的源極連接於電阻R6的一端,基板連接於接地端子。電阻R6的另一端連接於接地端子。電阻R5是電流電壓變換用的電阻,其一端是電壓的輸出端子。
電壓電流變換電路11的第一電壓輸入端子連接於二次電池B1的正極端子,第二電壓輸入端子連接於二次電池B1的負極端子,電流輸出端子連接於電流鏡電路的輸入端子。
圖3的電壓的基準電位變換電路中,電壓電流變換電路11將二次電池B1的電壓變換為電流,電流電壓變換電路31將該電流變換為以接地端子的電位為基準的電壓。
因此,電流電壓變換電路31設為與將電壓電流變換電路11的電壓變換為電流的電路相同的構成,藉此可將電壓電流變換電路11的電流準確地再變換為電壓。
以上,對本發明的實施形態進行了說明,但本發明並不限定於所述實施形態,能夠於不脫離本發明的主旨的範圍內進行各種變更。例如,電阻R2、電阻R4、電阻R6具有將電晶體M1、電晶體M2、電晶體M3的源極電壓偏置成高於基板電壓的功能,因此亦可包含定電流源。
11、21:電壓電流變換電路
12、15、16、22、25、26:開關
13、23:電阻電路
14、24、38:基準電壓電路
17、18、27、28:比較器
31:電流電壓變換電路
33:MOS電晶體
34、37、R1、R2、R3、R4、R5、R6:電阻
36:增強型的MOS電晶體(MOS電晶體)
39:電流鏡電路
32、35:運算放大器
100:充放電控制裝置
B1、B2:二次電池
M1、M2、M3:空乏型MOSFET(Nch空乏型的電晶體、電晶體)
圖1是表示本發明實施形態的電壓電流變換電路的電路圖。
圖2是表示包括故障診斷電路的充放電控制裝置的框圖。
圖3是表示圖2的充放電控制裝置中所使用的本發明實施形態的電壓電流變換電路及電流電壓變換電路的電路圖。
11:電壓電流變換電路
M1、M2:空乏型MOSFET(Nch空乏型的電晶體、電晶體)
R1、R2、R3、R4:電阻
Claims (5)
- 一種電壓電流變換電路,將輸入端子的電壓變換為電流並自輸出端子輸出,所述電壓電流變換電路的特徵在於包括: 電壓電流變換電阻,連接於所述輸入端子;以及 電流鏡電路,映射所述電壓電流變換電阻所輸出的電流,且 所述電流鏡電路包含源極的電壓被偏置成高於基板的電壓的空乏型電晶體。
- 如請求項1所述的電壓電流變換電路,其中 所述空乏型電晶體的基板接地,源極經由電阻接地。
- 如請求項1所述的電壓電流變換電路,其中 所述空乏型電晶體的基板接地,源極經由電流源接地。
- 一種充放電控制裝置,其特徵在於包括: 故障診斷電路,具有如請求項1至請求項3中任一項所述的電壓電流變換電路、及將所述電壓電流變換電路的電流變換為接地端子基準的電壓的電流電壓變換電路。
- 如請求項4所述的充放電控制裝置,其中 所述電流電壓變換電路包括: 電流電壓變換電阻,將所述電壓電流變換電路的電流變換為電壓;以及 空乏型電晶體,設置於所述電流電壓變換電阻與接地端子之間,源極的電壓被偏置成高於基板的電壓。
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| TW202110030A (zh) | 2021-03-01 |
| CN112114257B (zh) | 2023-10-13 |
| JP7297549B2 (ja) | 2023-06-26 |
| EP3754843B1 (en) | 2021-06-16 |
| CN112114257A (zh) | 2020-12-22 |
| JP2021002175A (ja) | 2021-01-07 |
| US11042177B2 (en) | 2021-06-22 |
| EP3754843A1 (en) | 2020-12-23 |
| US20200401171A1 (en) | 2020-12-24 |
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