TWI870700B - Electrostatic suction cup and plasma treatment device with multi-zone temperature control - Google Patents

Abstract

The present invention provides an electrostatic chuck with multi-zone temperature control and a plasma processing device. The electrostatic chuck with multi-zone temperature control includes: a ceramic body for carrying a wafer to be processed; a base located below the ceramic body; a heating assembly located between the base and the ceramic body, the heating assembly being used to control the temperature of the ceramic body; a heat conductive layer disposed between the heating assembly and the ceramic body and/or between the heating assembly and the base, the heat conductive layer being divided into a plurality of zones, and a thermal conductivity of any zone being independently adjustable. The present invention can dynamically adjust the temperature control zones according to process requirements, and solve the problems of too many wirings in the reaction chamber and the complex structure of the radio frequency filter.

Description

Electrostatic suction cup and plasma treatment device with multi-zone temperature control

The present invention relates to the field of semiconductor equipment technology, and in particular to an electrostatic chuck with multi-zone temperature control and a plasma processing device.

In the manufacturing process of semiconductor devices, in order to perform deposition, etching and other processing on the wafer, the electrostatic force generated by an electrostatic chuck (ESC) is generally used to support and fix the wafer during the processing.

The electrostatic chuck is usually located at the bottom of the reaction chamber. The ceramic body used to carry the wafer in the electrostatic chuck has an electrode buried in it. By applying direct current to the electrode, electrostatic charge is generated to hold the wafer placed on the ceramic body. The base under the ceramic body supports it, and a heater is provided between the two to control the temperature of the wafer.

With the continuous development of integrated circuit technology, higher requirements are placed on semiconductor manufacturing equipment. Plasma treatment equipment is one of the most important equipment in semiconductor processing. Improving the uniformity of the processing process is the design goal of the plasma treatment equipment.

In order to improve the uniformity of wafer temperature, the heater is usually divided into different heating zones, and the temperature of different heating zones is controlled separately. As the process requirements continue to increase, the number of heating zones continues to increase, from a few to dozens, or even more.

For example, the existing dynamic-ESC (abbreviated as D-ESC) uses a heater to control the temperature in multiple zones and a cooling liquid in the base to cool the system. The D-ESC is controlled in multiple zones by heating and controlling the temperature in multiple circles of heaters. This design has two defects:

1. The zones are fixed. For different processes, the temperature control zones will be different, and the temperature control zones cannot be dynamically adjusted according to the process requirements;

2. The heater is divided into several zones, which requires several pairs of heating wires, which will greatly increase the number of wiring in the reaction chamber. At the same time, in order to prevent the radio frequency from leaking out of the chamber through the heater heating wire, it is necessary to add a radio frequency (RF) filter to the heating line. The more heating wires there are, the more filters are required, the more complex the structure, and the larger the volume, which makes it difficult to control the power loss such as RF leakage and heat generation through the filter.

The purpose of the present invention is to provide an electrostatic chuck and plasma processing device with multi-zone temperature control, which can dynamically adjust the temperature control zones according to process requirements and solve the problems of too many wirings in the reaction chamber and the complex structure of the radio frequency filter.

In order to achieve the above objectives, the present invention is implemented through the following technical solutions:

A multi-zone temperature-controlled electrostatic suction cup, comprising:

A ceramic body for carrying the wafer to be processed;

A base, located below the ceramic body;

A heating component is located between the base and the ceramic body, and the heating component is used to control the temperature of the ceramic body;

The heat-conducting layer is arranged between the heating component and the ceramic body and/or between the heating component and the base. The heat-conducting layer is divided into a plurality of zones, and the thermal conductivity of any zone is independently adjustable.

Furthermore, the heat-conducting layer includes: a plurality of sealed chambers, and a heat-conducting fluid is introduced into or extracted from the sealed chambers to adjust the thermal conductivity of the partitions.

Furthermore, the adjacent sealed chambers are separated by partitions.

Furthermore, each of the sealed chambers is provided with a fluid inlet and outlet.

Furthermore, a connecting pipe is provided in the base for connecting the fluid inlet and outlet with the fluid source of the heat-conducting fluid.

Furthermore, each partition corresponds to a plurality of the sealed chambers, and the thermal conductivity of each sealed chamber in each partition is the same.

Furthermore, each partition corresponds to one of the sealed chambers.

Furthermore, the heat-conducting fluid is a heat-conducting gas, and the thermal conductivity of the heat-conducting layer in the zone is changed by changing the pressure of the heat-conducting gas in the sealed chamber.

Furthermore, the heat-conducting fluid is a heat-conducting liquid, and the thermal conductivity of the heat-conducting layer in the zone is changed by filling or evacuating the heat-conducting liquid in the sealed chamber.

Furthermore, the heat-conducting fluids in any two of the sealed chambers are the same or different.

Furthermore, a supporting body is provided between the upper surface and the lower surface in the sealed chamber.

Furthermore, at least one of the upper surface and the lower surface of the sealed chamber is not sealed, and the unsealed surface is sealed by gluing with the ceramic body, the base or the heating assembly.

Furthermore, a fluid channel is provided in the base, and a cooling liquid flows through the fluid channel to cool the ceramic body.

Furthermore, the heating assembly includes a heater, and the upper surface and the lower surface of the heater are both connected to the heat conductive layer.

Furthermore, the heating assembly includes a heater and a heat transfer layer, one of the upper surface and the lower surface of the heater is connected to the heat conductive layer, and the other is connected to the heat transfer layer.

Furthermore, the heating assembly includes a heater, the cross-sectional area of the heater is equal to the cross-sectional area of the heat-conducting layer, and a radio frequency filter is provided on the heating circuit of the heater.

Furthermore, the heat conducting layer is made of insulating material.

Furthermore, the material of the heat conductive layer is selected from ceramics, quartz, and polymer engineering plastics.

Furthermore, the thickness of the thermal conductive layer is in the range of 1-200 microns.

A plasma processing device includes a vacuum reaction chamber and the multi-zone temperature-controlled electrostatic chuck as described above located in the vacuum reaction chamber.

Compared with the prior art, the present invention has the following advantages:

The electrostatic suction cup with multi-zone temperature control provided by the present invention has a heat-conducting layer disposed between the heating component and the ceramic body and/or between the heating component and the base, and the heat-conducting layer is divided into a plurality of zones, and the thermal conductivity of any zone is independently adjustable. When the heat-conducting layer is located between the heating component and the ceramic body, the distribution of the heat generated by the heating component and transferred upward is directly controlled by adjusting the thermal conductivity of each zone, thereby achieving the purpose of multi-zone temperature control of the ceramic body. At the same time, since the power adjustment component (i.e., the heat-conducting layer) is closest to the ceramic body, the temperature control response time can be shortened; when the heat-conducting layer is located between the heating component and the base By adjusting the thermal conductivity of each zone, the base conducts different amounts of heat away from different areas of the heating component, which can indirectly adjust the distribution of heat transfer upward from the heating component, thereby achieving the purpose of multi-zone temperature control of the ceramic body; when heat-conducting layers are set on both the upper and lower sides of the heating component, the ceramic body can obtain a larger multi-zone temperature control dynamic range and achieve a fast temperature control response speed.

In addition, the present invention adopts a zoned variable thermal conductivity heat conductive layer to realize a multi-zone temperature control function, so that the heater of the heating assembly can adopt a non-zoned heater. Compared with the zoned heater of the prior art, the present invention can adopt a heating line to connect the heater and the controller outside the reaction chamber, which greatly simplifies the structure of the reaction chamber. At the same time, only one RF filter needs to be set on the heating line, so that the structure of the RF filter in the reaction chamber is simplified and the RF loss is more controllable.

The scheme proposed by the present invention is further described in detail below in combination with the drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be more clear. It should be noted that the drawings adopt a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structures, proportions, sizes, etc. depicted in the drawings attached to this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by those of ordinary skill in the art. They are not used to limit the conditions for the implementation of the present invention and therefore have no substantial technical significance. Any structural modifications, changes in proportions, or adjustments in size shall still fall within the scope of the technical contents disclosed by the present invention without affecting the effects and purposes that can be achieved by the present invention.

Figure 1 shows a schematic diagram of the structure of the lower electrode of a plasma processing device. In the plasma processing device, a gas shower head and an electrostatic suction cup arranged opposite to the gas shower head are arranged in a vacuum reaction chamber. The gas shower head is connected to a gas supply device and is used to transport reaction gas to the vacuum reaction chamber and serves as the upper electrode of the vacuum reaction chamber. The electrostatic suction cup includes a base 110 and a ceramic body 120. The base 110 serves as the lower electrode of the vacuum reaction chamber, and a reaction area is formed between the upper electrode and the lower electrode. An electrostatic electrode 121 is arranged inside the ceramic body 120 to generate electrostatic suction to support and fix the wafer to be processed during the manufacturing process. At least one RF power source 200 is applied to the lower electrode through a matching network to generate a RF electric field between the upper electrode and the lower electrode to dissociate the reaction gas into plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above-mentioned active particles can undergo a variety of physical and chemical reactions with the surface of the wafer to be processed carried on the upper surface of the ceramic body, so that the morphology of the wafer surface changes, that is, the etching process is completed. A heating assembly 130 is also provided between the base 110 and the ceramic body 120. The heating assembly 130 is provided with a heater 131 for providing heat. The heater is connected to a controller 300 outside the reaction chamber via a heating line 310. In order to prevent the radio frequency in the base 110 from leaking out of the chamber via the heating line 310, a radio frequency filter 400 is added to the heating line 310.

FIG. 2 shows an electrostatic suction cup that uses multiple heaters 131 for multi-zone temperature control. Each heater 131 corresponds to a temperature control zone, such as zone 1, zone 2, zone 3, zone 4, etc. Each zone is fixed and cannot be dynamically adjusted. In order to achieve individual control of each heater 131, each heater 131 is connected to the controller 300 through its own heating line 310, which increases the number of wiring in the reaction chamber. At the same time, in order to prevent RF leakage, an RF filter needs to be installed on each heating line, making the RF filter complex in structure, large in size, and difficult to control RF leakage and heating power.

In view of this, the present invention provides an electrostatic chuck with multi-zone temperature control, as shown in Figures 3, 4, and 5, including a ceramic body 120 for carrying a wafer to be processed, a base 110 located below the ceramic body 120, and a heating assembly 130 located between the base 110 and the ceramic body 120, wherein the heating assembly 130 is used to control the temperature of the ceramic body 120, and further includes a heat-conducting layer 140, which is arranged between the heating assembly 130 and the ceramic body 120 and/or between the heating assembly 130 and the base 110, and the heat-conducting layer 140 is divided into a plurality of zones, and the thermal conductivity of any of the zones is independently adjustable.

In the present invention, the thermal conductivity of any zone in the thermal conductive layer 140 is variable, so as to realize the function of multi-zone temperature control of the ceramic body 120. FIG. 3 shows that the thermal conductive layer 140 is arranged between the heating component 130 and the ceramic body 120. Since part of the power outputted by the heating component 130 will be conducted downward through the base 110, and the other part will be used upward to heat the ceramic body 120, by adjusting the thermal conductivity on the path from the heating component 130 to the ceramic body 120, the distribution of the heat generated by the heating component 130 transferred upward is directly controlled, thereby realizing the purpose of multi-zone temperature control of the ceramic body 120. At the same time, since the power regulating component is closest to the ceramic body 120, the temperature control response time can be shortened. Figure 4 shows that the heat conductive layer 140 is arranged between the heating component 130 and the base 110. By adjusting the thermal conductivity of the path from the heating component 130 to the base 110, that is, controlling the base 110 to conduct different amounts of heat away from different areas of the heating component 130, the distribution of heat transfer upward can be indirectly adjusted, thereby achieving the purpose of multi-zone temperature control of the ceramic body 120. In order to enable the ceramic body 120 to obtain a larger multi-zone temperature control dynamic range, as shown in Figure 5, the thermal conductive layer 140 can be set between the heating component 130 and the ceramic body 120 and between the heating component 130 and the base 110. In this way, the heating power of the ceramic body 120 and the heat dissipation power from the base 110 can be adjusted at the same time, so that the temperature adjustable range of the ceramic body 120 is larger and a fast temperature control response speed is achieved.

Specifically, the heat-conducting layer 140 includes: a plurality of sealed chambers 141, into which heat-conducting fluid is introduced or extracted to adjust the thermal conductivity of the partition. Optionally, a partition is provided between adjacent sealed chambers 141 to separate each other so as to adjust each sealed chamber 141 individually. FIG. 6 shows a top view of the heat-conducting layer 140 including four sealed chambers 141, wherein each sealed chamber 141 is provided with a fluid inlet and outlet 143, through which heat-conducting fluid can be introduced or extracted to change the thermal conductivity of the sealed chamber 141. In addition, a corresponding communication pipe is also provided in the base 110 for connecting the fluid inlet and outlet 143 with the fluid source of the heat-conducting fluid. Usually, the fluid source is arranged outside the reaction chamber, and the communication pipe passes through the base 110.

In the present invention, each zone of the heat-conducting layer 140 may correspond to a plurality of the sealed chambers 141, and the thermal conductivity of each sealed chamber 141 in each zone is the same, thereby achieving the same thermal conductivity in each zone. Optionally, in order to achieve more refined multi-zone temperature control, each zone may correspond to one sealed chamber 141.

The heat-conducting fluid may be a heat-conducting gas, such as helium. By changing the pressure of the heat-conducting gas in the sealed chamber 141, the thermal conductivity of the partition is changed. When the heat-conducting gas is filled into the sealed chamber 141, the thermal conductivity of the partition increases with the increase of the gas pressure. When the heat-conducting gas in the sealed chamber 141 is extracted, the thermal conductivity of the partition decreases. When the gas is extracted to a near vacuum, the thermal conductivity of the partition reaches the minimum. It can be understood that when the sealed chamber 141 is a vacuum and there is no heat-conducting gas, the thermal conductivity of the partition is related to the solid structure of the sealed chamber 141. Therefore, the solid structure of the sealed chamber 141 can be made of a material with low thermal conductivity.

The heat-conducting fluid may also be a heat-conducting liquid, and the thermal conductivity of the partition is changed by filling or evacuating the heat-conducting liquid in the sealed chamber 141. When the heat-conducting liquid is evacuated from the sealed chamber 141, the thermal conductivity of the partition is the lowest; when the heat-conducting liquid is filled in the sealed chamber 141, the thermal conductivity of the partition is the highest.

Furthermore, the heat-conducting fluids in any two of the sealed chambers 141 may be the same or different. That is, heat-conducting liquid may be introduced into a portion of the sealed chambers 141, and heat-conducting gas may be introduced into another portion of the sealed chambers 141, which may be flexibly set according to the process requirements.

In addition, the thickness of the heat conductive layer 140 may be in the range of 1-200 microns. The partitions between adjacent sealed chambers 141 in the heat conductive layer 140 may provide basic support between the upper and lower surfaces of each sealed chamber 141. Furthermore, a support body may be arranged in the sealed chamber 141 to provide additional support for enhancing the mechanical strength of the sealed chamber 141 when evacuating the vacuum chamber. As shown in FIG. 6 , the two sealed chambers 141 located on the outer side are provided with supporting bodies 144, which are supported between the upper and lower surfaces of the sealed chambers 141, and can enhance the mechanical strength of the two sealed chambers 141 when evacuating the vacuum. The supporting bodies 144 can be small bosses, which are provided between the upper and lower surfaces of the sealed chambers 141 by adhesive glue for support. In other embodiments, if the thickness of the heat conductive layer is relatively small, the supporting bodies may not be provided, and the chambers can be additionally supported by the relatively large roughness of the upper and lower surfaces of the sealed chambers.

The upper and lower surfaces of the sealed chamber 141 are both sealed with covers to form a seal. Optionally, since the sealed chamber 141 is located between the ceramic body 120 and the heating assembly 130 or between the base 110 and the heating assembly 130, at least one of the upper and lower surfaces of the sealed chamber 141 is not sealed. As shown in FIG. 7 , the lower surface of the sealed chamber 141 is provided with a cover, while the upper surface is not provided with a cover. In other embodiments, a cover may be provided on the upper surface while no cover may be provided on the lower surface, or no cover may be provided on the upper and lower surfaces. The unsealed surface is sealed by gluing with the ceramic body 120, the base 110 or the heating assembly 130. When no cover plates are provided on the upper and lower surfaces, the support body 144 provided in the sealed chamber 141 can be directly supported between the heating assembly 130 and the ceramic body 120 , or between the heating assembly 130 and the base 110 .

In addition, a fluid channel is provided in the base 110, and a cooling liquid flows through the fluid channel to cool the ceramic body 120. The cooling liquid flows through the fluid channel to take away the heat of the heating component 130, and cooperates with the heating component 130 to achieve temperature control of the ceramic body 120.

As shown in FIG. 3, FIG. 4, and FIG. 5, the heating assembly 130 includes a heater 131, which is used to release heat to change the temperature of the ceramic body 120. When the heat-conducting layer 140 is disposed on both the upper and lower surfaces of the heating assembly 130, as shown in FIG. 5, the upper and lower surfaces of the heater 131 can be directly connected to the heat-conducting layer 140, specifically, they can be connected by adhesive, so that the heat-conducting layer 140 directly regulates the heat released by the heater 131. In the case where the heat conducting layer 140 is disposed on one of the upper and lower surfaces of the heating assembly 130, as shown in FIG. 3 and FIG. 4, the heating assembly 130 further includes a heat transfer layer 132, and one of the upper and lower surfaces of the heater 131 is connected to the heat conducting layer 131, and the other is connected to the heat transfer layer 132. The heat transfer layer 132 may include a polyimide film 1321 and an aluminum foil 1322, which wrap the surface of the heater 131 in sequence.

As mentioned above, a large number of heaters 131 will lead to a large number of wirings in the reaction chamber and a large number of RF filters. Therefore, the present invention adopts a heater 131 included in the heating assembly 130, and the cross-sectional area of the heater 131 is equal to the cross-sectional area of the ceramic body 120, that is, the cross-sectional area of the heater 131 can be the same as the cross-sectional area of the ceramic body 120, or slightly smaller than the cross-sectional area of the ceramic body 120. Therefore, as shown in FIG. 3, FIG. 4, and FIG. 5, only one heating line 310 is needed to connect the heater 131 and the controller 300 outside the reaction chamber, thereby reducing the number of wiring in the reaction chamber; and since there is only one heating line 310, only one RF filter 400 is needed to be installed on the heating line 310, thereby solving the problem of complex structure, large volume, and difficulty in controlling RF leakage and heat generation caused by installing multiple RF filters 400.

In addition, the heat conducting layer 140 is made of insulating materials, such as ceramics, quartz, polymer engineering plastics, etc.

Based on the same inventive concept, the present invention also provides a plasma processing device, including a vacuum reaction chamber, and the multi-zone temperature-controlled electrostatic chuck as described above located in the vacuum reaction chamber.

The plasma processing device of the present invention may be a capacitively coupled plasma processor (CCP) or an inductively coupled plasma processor (ICP).

It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or apparatus. In the absence of further restrictions, an element defined by the phrase "including a ..." does not exclude the presence of other identical elements in the process, method, article or apparatus including the element.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After reading the above content, a person with ordinary knowledge in the field to which the present invention belongs will find various modifications and substitutions of the present invention obvious. Therefore, the protection scope of the present invention should be limited by the scope of the attached invention application patent.

1-4: Partitions 110: Base 120: Ceramic body 121: Electrostatic electrode 130: Heating assembly 131: Heater 132: Heat transfer layer 1321: Polyimide film 1322: Aluminum foil 140: Thermal conductive layer 141: Sealed chamber 143: Fluid inlet and outlet 144: Support body 200: RF power supply 300: Controller 310: Heating line 400: RF filter

In order to more clearly explain the technical solution of the present invention, the following will briefly introduce the figures required for the description. Obviously, the figures described below are an embodiment of the present invention. For those with ordinary knowledge in the field to which the present invention belongs, other figures can be obtained based on these figures without making progressive improvements: Figure 1 is a structural schematic diagram of the lower electrode of the plasma treatment device; Figure 2 is a structural schematic diagram of a multi-zone temperature-controlled electrostatic suction cup of the prior art; Figure 3 is a structural schematic diagram of a multi-zone temperature-controlled electrostatic suction cup provided in an embodiment of the present invention; Figure 4 is a structural schematic diagram of a multi-zone temperature-controlled electrostatic suction cup provided in another embodiment of the present invention; Figure 5 is a schematic diagram of the structure of a multi-zone temperature-controlled electrostatic suction cup provided in another embodiment of the present invention; Figure 6 is a top view of a thermal conductive layer provided in an embodiment of the present invention; Figure 7 is a schematic diagram of the structure of a thermal conductive layer with an open upper surface provided in an embodiment of the present invention.

1~4: Partitions

110: Base

120: Ceramic body

130: Heating component

131: Heater

140: Thermal conductive layer

300: Controller

310: Heating line

Claims (17)

A multi-zone temperature-controlled electrostatic chuck includes: a ceramic body for carrying a wafer to be processed; a base located below the ceramic body; a heating component located between the base and the ceramic body, the heating component used to control the temperature of the ceramic body; a heat-conducting layer arranged between the heating component and the ceramic body and/or between the heating component and the base, the heat-conducting layer is divided into a plurality of zones, the heat-conducting layer includes: a plurality of sealed chambers, a heat-conducting fluid can be introduced into or drawn out of the sealed chambers, each zone corresponds to one or more of the sealed chambers, and the thermal conductivity between different zones can be independently adjusted by changing the amount or type of the heat-conducting fluid in the sealed chamber. The multi-zone temperature-controlled electrostatic chuck as described in claim 1, wherein the adjacent sealed chambers are separated by a partition. The multi-zone temperature-controlled electrostatic chuck as described in claim 1, wherein each of the sealed chambers is provided with a fluid inlet and outlet. As described in claim 3, the electrostatic suction cup with multi-zone temperature control has a connecting pipe in the base for connecting the fluid inlet and outlet with a fluid source of the heat-conducting fluid. The multi-zone temperature-controlled electrostatic chuck as described in claim 1, wherein the heat-conducting fluid is a heat-conducting gas, and the thermal conductivity of the heat-conducting layer in the zone is changed by changing the pressure of the heat-conducting gas in the sealed chamber. The multi-zone temperature-controlled electrostatic chuck as described in claim 1, wherein the heat-conducting fluid is a heat-conducting liquid, and the thermal conductivity of the heat-conducting layer in the zone is changed by filling or evacuating the heat-conducting liquid in the sealed chamber. The multi-zone temperature-controlled electrostatic chuck as described in claim 1, wherein the heat-conducting fluid in any two of the sealed chambers is the same or different. The multi-zone temperature-controlled electrostatic suction cup as described in claim 1, wherein a support body is provided between an upper surface and a lower surface in the sealed chamber. The multi-zone temperature-controlled electrostatic suction cup as described in claim 1, wherein at least one of the upper surface and the lower surface of the sealed chamber is not sealed, and the unsealed surface is sealed by gluing with the ceramic body, the base or the heating component. The multi-zone temperature-controlled electrostatic chuck as described in claim 1, wherein a fluid channel is provided in the base, and a cooling liquid flows through the fluid channel to cool the ceramic body. The multi-zone temperature-controlled electrostatic suction cup as described in claim 1, wherein the heating component includes a heater, and an upper surface and a lower surface of the heater are both connected to the thermal conductive layer. The multi-zone temperature-controlled electrostatic suction cup as described in claim 1, wherein the heating component includes a heater and a heat transfer layer, one of the upper surface and the lower surface of the heater is connected to the heat conductive layer, and the other is connected to the heat transfer layer. The multi-zone temperature-controlled electrostatic suction cup as described in claim 1, wherein the heating component includes a heater, a cross-sectional area of the heater is equal to a cross-sectional area of the heat-conducting layer, and a radio frequency filter is provided on a heating circuit of the heater. The electrostatic suction cup with multi-zone temperature control as described in claim 1, wherein the thermal conductive layer is made of an insulating material. The multi-zone temperature-controlled electrostatic chuck as described in claim 14, wherein the material of the thermal conductive layer is selected from ceramics, quartz, and polymer engineering plastics. The multi-zone temperature-controlled electrostatic chuck as described in claim 1, wherein the thickness of the thermal conductive layer ranges from 1 to 200 microns. A plasma processing device, comprising a vacuum reaction chamber and a multi-zone temperature-controlled electrostatic chuck as described in any one of claims 1-16, wherein the multi-zone temperature-controlled electrostatic chuck is located in the vacuum reaction chamber.