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TWI870458B - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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TWI870458B
TWI870458B TW109131297A TW109131297A TWI870458B TW I870458 B TWI870458 B TW I870458B TW 109131297 A TW109131297 A TW 109131297A TW 109131297 A TW109131297 A TW 109131297A TW I870458 B TWI870458 B TW I870458B
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adhesive layer
adhesive
mass
manufacturing
semiconductor device
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TW202116953A (en
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阿久津高志
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日商琳得科股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/06Work supports, e.g. adjustable steadies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D7/00Accessories specially adapted for use with machines or devices of the preceding groups
    • B28D7/04Accessories specially adapted for use with machines or devices of the preceding groups for supporting or holding work or conveying or discharging work
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08Macromolecular additives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35Heat-activated
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • H10P52/00
    • H10P72/0428
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    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
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    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/40Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer

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  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
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  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本發明係關於一種半導體裝置之製造方法,其係使用黏著片的半導體裝置之製造方法,該黏著片依序具有含有熱膨脹性粒子之黏著劑層(X1)、基材(Y)與藉由照射能量線進行硬化而黏著力降低之黏著劑層(X2),其包含特定之步驟1~5。The present invention relates to a method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device using an adhesive sheet, wherein the adhesive sheet sequentially comprises an adhesive layer (X1) containing thermal expansion particles, a substrate (Y), and an adhesive layer (X2) whose adhesive force is reduced by curing by irradiating energy rays, and comprises specific steps 1 to 5.

Description

半導體裝置之製造方法Semiconductor device manufacturing method

本發明係關於半導體裝置之製造方法。The present invention relates to a method for manufacturing a semiconductor device.

近年來,向電子機器之小型化、輕量化及高機能化進展,伴隨此,搭載於電子機器的半導體裝置,亦追求小型化、薄型化及高密度化。 半導體裝置之製造過程中,半導體晶圓,經過藉由研削使厚度變薄的研削步驟、切斷分離而個片化的個片化步驟等,加工成半導體晶片。此時,半導體晶圓以暫時固定於暫時固定用片材的狀態施以指定的加工。施以指定的加工而得之半導體晶片,自暫時固定用片材分離後,視需要,適當施以將半導體晶片彼此的間隔擴大的擴展步驟、將經擴大間隔的複數半導體晶片排列的再排列步驟、使半導體晶片之表背反轉的反轉步驟等後,實裝於基板。In recent years, electronic devices have been miniaturized, lightweighted, and highly functionalized. Along with this, semiconductor devices installed in electronic devices have also been miniaturized, thinned, and highly densed. In the manufacturing process of semiconductor devices, semiconductor wafers are processed into semiconductor chips through grinding steps to reduce the thickness by grinding, cutting and separating, and individualizing. At this time, the semiconductor wafer is temporarily fixed to a temporary fixing sheet and subjected to the specified processing. The semiconductor chip obtained by the specified processing is separated from the temporary fixing sheet and, if necessary, appropriately subjected to an expansion step of expanding the interval between the semiconductor chips, a rearrangement step of arranging a plurality of semiconductor chips with the expanded intervals, a reversal step of reversing the front and back of the semiconductor chip, etc., and then mounted on the substrate.

將半導體晶片實裝於基板時,採用將半導體晶片透過稱為晶片黏結薄膜(以下,亦稱為「DAF」)之具有熱硬化性的薄膜狀接著劑貼附於基板之步驟。DAF,貼附於半導體晶圓或經個片化之複數半導體晶片的一面,與半導體晶圓之個片化同時或貼附於半導體晶片後分割成與半導體晶片相同形狀。經個片化而得之附DAF的半導體晶片,自DAF側貼附於基板(晶片黏結),之後,藉由使DAF熱硬化而半導體晶片與基板固著。因此,DAF直至貼附於基板為止,必須保持藉由感壓或加熱而接著的性質,使之成為可能的流程為必要。When mounting a semiconductor chip on a substrate, a step is adopted in which the semiconductor chip is attached to the substrate through a thermosetting film-like adhesive called a chip bonding film (hereinafter also referred to as "DAF"). DAF is attached to one side of a semiconductor wafer or a plurality of individual semiconductor chips, and is divided into the same shape as the semiconductor chip at the same time as the individualization of the semiconductor wafer or after being attached to the semiconductor chip. The individualized semiconductor chip with DAF is attached to the substrate from the DAF side (chip bonding), and then the semiconductor chip and the substrate are fixed by thermally curing the DAF. Therefore, the DAF must maintain the property of being bonded by pressure or heat until it is attached to the substrate, and a process is necessary to make this possible.

為了提升將半導體晶圓等之加工對象物研削或個片化時的加工精度及加工速度,使用暫時固定用片材等之固定手段,必須抑制加工時之加工對象物的振動、位置偏移等。另一方面,結束加工後,由提高生產性之觀點來看,加工對象物要求快速地自固定手段分離。 專利文獻1中揭示一種將暫時固定用之加熱剝離型黏著片使用於電子零件的切斷中的方法,該暫時固定用之加熱剝離型黏著片於基材之至少單面設置有含有熱膨脹性微小球的熱膨脹性黏著層。同文獻中記載有下述要旨:該加熱剝離型黏著片,於電子零件切斷時,由於對於被黏著體可確保指定大小之接觸面積,故能發揮可防止晶片飛出等之接著不良情況的接著性之外,於使用後若加熱使熱膨脹性微小球膨脹,則使與被黏著體之接觸面積減少,可輕易地剝離。 [先前技術文獻] [專利文獻]In order to improve the processing accuracy and processing speed when grinding or dicing a processing object such as a semiconductor wafer, a fixing means such as a temporary fixing sheet must be used to suppress vibration and positional deviation of the processing object during processing. On the other hand, after the processing is completed, from the perspective of improving productivity, the processing object is required to be quickly separated from the fixing means. Patent document 1 discloses a method of using a heat-peelable adhesive sheet for temporary fixing in cutting electronic components, wherein the heat-peelable adhesive sheet for temporary fixing has a heat-expandable adhesive layer containing heat-expandable microspheres on at least one side of a substrate. The same document states the following: This heat-peelable adhesive sheet can ensure a contact area of a specified size with the adherend when electronic components are cut, thereby preventing poor adhesion such as chip flying out. After use, if the heat-expandable microspheres are heated to expand, the contact area with the adherend is reduced, making it easy to peel off. [Prior technical document] [Patent document]

[專利文獻1]日本專利第3594853號公報[Patent Document 1] Japanese Patent No. 3594853

[發明所欲解決之課題][The problem that the invention wants to solve]

然而,如專利文獻1揭示的方法,將加工對象物固定於熱膨脹性黏著層而切斷之情形中,藉由加熱而剝離後源自熱膨脹性粒子的殘渣附著於加工對象物的表面,又或是因熱膨脹性粒子的膨脹而黏著劑層變形或變質,一部分的黏著劑層附著於加工對象物的表面(所謂的「殘膠」),而有污染加工對象物之表面的懸念。However, in the method disclosed in Patent Document 1, when the object to be processed is fixed to the heat-expandable adhesive layer and then cut, residues from the heat-expandable particles after peeling off by heating may adhere to the surface of the object to be processed, or the adhesive layer may deform or deteriorate due to the expansion of the heat-expandable particles, and a part of the adhesive layer may adhere to the surface of the object to be processed (so-called "residual adhesive"), thereby causing the possibility of contaminating the surface of the object to be processed.

本發明係鑑於上述問題點而成者,其目的在於提供一種半導體裝置之製造方法,其沒有熱膨脹性粒子及經膨脹之黏著劑層所致之加工對象物的污染之懸念,且加工性及生產性優異。 [解決課題之手段]The present invention is made in view of the above-mentioned problems, and its purpose is to provide a method for manufacturing a semiconductor device, which is free from the concern of contamination of the processing object caused by thermally expandable particles and expanded adhesive layer, and has excellent processability and productivity. [Means for solving the problem]

本發明者們發現藉由下述半導體裝置之製造方法可藉決上述課題,該半導體裝置之製造方法使用依序具有含有熱膨脹性粒子之黏著劑層、基材與藉由照射能量線進行硬化而黏著力降低之黏著劑層的黏著片,且包含特定之步驟1~5。 即,本發明係關於下述[1]~[10]。 [1] 一種半導體裝置之製造方法,其係使用黏著片的半導體裝置之製造方法,該黏著片依序具有含有熱膨脹性粒子之黏著劑層(X1)、基材(Y)與藉由照射能量線進行硬化而黏著力降低之黏著劑層(X2),該製造方法包含下述步驟1~5: 步驟1:將加工對象物貼附於前述黏著片具有之黏著劑層(X2),將支撐體貼附於前述黏著片具有之黏著劑層(X1)的步驟; 步驟2:對前述加工對象物施行選自研削處理及個片化處理中之1種以上之加工處理的步驟; 步驟3:於經施行前述加工處理之加工對象物的與黏著劑層(X2)相反側之面,貼附熱硬化性薄膜的步驟; 步驟4:加熱前述黏著片,分離黏著劑層(X1)與前述支撐體的步驟; 步驟5:對黏著劑層(X2)照射能量線,分離黏著劑層(X2)與前述加工對象物的步驟。 [2] 如上述[1]中記載之半導體裝置之製造方法,其中前述加工處理為以隱形切割法進行之個片化處理、以刀片預切割法進行之研削處理及個片化處理,或以隱形預切割法進行之研削處理及個片化處理。 [3] 如上述[1]或[2]中記載之半導體裝置之製造方法,前述加工處理為以隱形預切割法進行之研削處理及個片化處理。 [4] 如上述[1]~[3]中任一項記載之半導體裝置之製造方法,前述熱膨脹性粒子之膨脹開始溫度(t)為50~110℃。 [5] 如上述[4]中記載之半導體裝置之製造方法,其中前述步驟4係將前述黏著片加熱至前述熱膨脹性粒子之膨脹開始溫度(t)以上且120℃以下,分離黏著劑層(X1)與前述支撐體的步驟。 [6] 如上述[1]~[5]中任一項記載之半導體裝置之製造方法,其中前述熱膨脹性粒子之含量,相對於黏著劑層(X1)之總質量(100質量%)而言,為1~30質量%。 [7] 如上述[1]~[6]中任一項記載之半導體裝置之製造方法,其中前述熱膨脹性粒子之23℃下之平均粒徑(D50 )為1~30μm。 [8] 如上述[1]~[7]中任一項記載之半導體裝置之製造方法,其中基材(Y)之23℃下之儲存模數E’(23)為5.0×107 ~ 5.0×109 Pa。 [9] 如上述[1]~[8]中任一項記載之半導體裝置之製造方法,其中前述加工對象物為半導體晶圓。 [10] 如上述[1]~[9]中任一項記載之半導體裝置之製造方法,其中前述能量線為紫外線。 [發明效果]The inventors have found that the above-mentioned problem can be solved by a method for manufacturing a semiconductor device, which uses an adhesive sheet having an adhesive layer containing thermally expandable particles, a substrate, and an adhesive layer whose adhesive force is reduced by curing by irradiating energy rays, and includes specific steps 1 to 5. That is, the present invention relates to the following [1] to [10]. [1] A method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device using an adhesive sheet, wherein the adhesive sheet sequentially comprises an adhesive layer (X1) containing thermally expandable particles, a substrate (Y), and an adhesive layer (X2) whose adhesive force is reduced by curing by irradiating energy rays, and the manufacturing method comprises the following steps 1 to 5: Step 1: attaching a processing object to the adhesive layer (X2) of the adhesive sheet, and attaching a support body to the adhesive layer (X1) of the adhesive sheet; Step 2: performing one or more processing selected from grinding processing and individual chip processing on the processing object; Step 3: a step of attaching a thermosetting film to the surface of the object to be processed on the opposite side of the adhesive layer (X2); Step 4: a step of heating the adhesive sheet to separate the adhesive layer (X1) from the support; Step 5: a step of irradiating the adhesive layer (X2) with energy rays to separate the adhesive layer (X2) from the object to be processed. [2] The method for manufacturing a semiconductor device as described in [1] above, wherein the processing is individualization processing by invisible dicing, grinding processing and individualization processing by blade pre-dicing, or grinding processing and individualization processing by invisible pre-dicing. [3] The method for manufacturing a semiconductor device as described in [1] or [2] above, wherein the processing is grinding and individualizing by invisible pre-cutting method. [4] The method for manufacturing a semiconductor device as described in any one of [1] to [3] above, wherein the expansion starting temperature (t) of the thermally expandable particles is 50 to 110°C. [5] The method for manufacturing a semiconductor device as described in [4] above, wherein the step 4 is a step of heating the adhesive sheet to a temperature above the expansion starting temperature (t) of the thermally expandable particles and below 120°C to separate the adhesive layer (X1) from the support body. [6] The method for producing a semiconductor device as described in any one of [1] to [5] above, wherein the content of the thermally expandable particles is 1 to 30 mass% relative to the total mass (100 mass%) of the adhesive layer (X1). [7] The method for producing a semiconductor device as described in any one of [1] to [6] above, wherein the average particle size (D 50 ) of the thermally expandable particles at 23°C is 1 to 30 μm. [8] The method for producing a semiconductor device as described in any one of [1] to [7] above, wherein the storage modulus E'(23) of the substrate (Y) at 23°C is 5.0×10 7 to 5.0×10 9 Pa. [9] A method for manufacturing a semiconductor device as described in any one of [1] to [8] above, wherein the object to be processed is a semiconductor wafer. [10] A method for manufacturing a semiconductor device as described in any one of [1] to [9] above, wherein the energy beam is ultraviolet light. [Effect of the invention]

若依據本發明,可提供一種半導體裝置之製造方法,其沒有熱膨脹性粒子及經膨脹之黏著劑層所致之加工對象物的污染之懸念,且加工性及生產性優異。According to the present invention, a method for manufacturing a semiconductor device can be provided, which is free from the concern of contamination of a processing object by thermally expandable particles and an expanded adhesive layer, and has excellent processability and productivity.

本說明書中,所謂「有效成分」,係指成為對象之組成物所含有的成分之中,除去稀釋溶劑的成分。 又,本說明書中,質量平均分子量(Mw),係以凝膠滲透色層分析(GPC)法測定之標準聚苯乙烯換算的值,具體而言係基於實施例中記載之方法所測定的值。In this specification, the so-called "active ingredient" refers to the components contained in the composition of interest, excluding the diluent solvent. In addition, in this specification, the mass average molecular weight (Mw) is a value converted to standard polystyrene measured by gel permeation chromatography (GPC), specifically, a value measured based on the method described in the embodiments.

本說明書中,例如,所謂「(甲基)丙烯酸」,係表示「丙烯酸」與「甲基丙烯酸」兩者,其他類似用語亦相同。 又,本說明書中,關於較佳的數值範圍(例如,含量等之範圍),階段地記載之下限值及上限值,可各自獨立組合。例如,由「較佳為10~90,更佳為30~60」之記載,亦可組合「較佳的下限值(10)」與「更佳的上限值(60)」成為「10~60」。In this specification, for example, "(meth)acrylic acid" means both "acrylic acid" and "methacrylic acid", and other similar terms are the same. In addition, in this specification, the lower limit and upper limit values described in stages for the preferred numerical range (for example, the range of content, etc.) can be combined independently. For example, from the description of "preferably 10~90, more preferably 30~60", "preferably the lower limit value (10)" and "preferably the upper limit value (60)" can also be combined to become "10~60".

本說明書中,所謂「能量線」,意指於電磁波或帶電粒子束之中具有能量量子者,作為其例子,可舉例紫外線、放射線、電子束等。紫外線,例如,作為紫外線源可藉由使用無電極燈、高壓水銀燈、金屬鹵化物燈、UV-LED等來照射。電子束,可照射藉由電子束加速器等產生者。 本說明書中,所謂「能量線聚合性」,意指藉由照射能量線進行聚合的性質。In this specification, the term "energy beam" means an electromagnetic wave or charged particle beam that has energy quanta, and examples thereof include ultraviolet rays, radiation, electron beams, etc. Ultraviolet rays, for example, can be irradiated by using an electrodeless lamp, a high-pressure mercury lamp, a metal halide lamp, a UV-LED, etc. as an ultraviolet source. Electron beams can be irradiated by electron beam accelerators, etc. In this specification, the term "energy beam polymerization" means the property of polymerization by irradiation with energy beams.

本說明書中,「層」為「非熱膨脹性層」或「熱膨脹性層」係藉由下述方法判斷。 成為判斷之對象的層含有熱膨脹性粒子時,將該層以熱膨脹性粒子的膨脹開始溫度(t)加熱處理3分鐘。由下述式算出之體積變化率未達5%時,該層判斷為「非熱膨脹性層」,為5%以上時,該層判斷為「熱膨脹性層」。 ・體積變化率(%)={(加熱處理後之前述層的體積-加熱處理前之前述層的體積)/加熱處理前之前述層的體積}×100 此外,不含熱膨脹性粒子之層定為「非熱膨脹性層」。In this manual, whether a "layer" is a "non-thermal expansion layer" or a "thermal expansion layer" is determined by the following method. When the layer to be determined contains thermal expansion particles, the layer is heated for 3 minutes at the expansion start temperature (t) of the thermal expansion particles. When the volume change rate calculated by the following formula is less than 5%, the layer is determined to be a "non-thermal expansion layer", and when it is 5% or more, the layer is determined to be a "thermal expansion layer". ・Volume change rate (%) = {(volume of the layer before heat treatment - volume of the layer before heat treatment) / volume of the layer before heat treatment} × 100 In addition, a layer that does not contain thermally expandable particles is defined as a "non-thermally expandable layer".

本說明書中,所謂半導體晶圓及半導體晶片之「表面」係指形成有電路的面(以下,亦稱為「電路面」),所謂半導體晶圓及半導體晶片之「背面」係指未形成有電路的面。In this specification, the "front surface" of a semiconductor wafer and a semiconductor chip refers to the side on which a circuit is formed (hereinafter also referred to as the "circuit surface"), and the "back surface" of a semiconductor wafer and a semiconductor chip refers to the side on which no circuit is formed.

[半導體裝置之製造方法] 本發明之一態樣的半導體裝置之製造方法,係使用黏著片的半導體裝置之製造方法,該黏著片依序具有含有熱膨脹性粒子之黏著劑層(X1)、基材(Y)與藉由照射能量線進行硬化而黏著力降低之黏著劑層(X2),該製造方法包含下述步驟1~5: 步驟1:將加工對象物貼附於前述黏著片具有之黏著劑層(X2),將支撐體貼附於前述黏著片具有之黏著劑層(X1)的步驟; 步驟2:對前述加工對象物施行選自研削處理及個片化處理中之1種以上之加工處理的步驟; 步驟3:於經施行前述加工處理之加工對象物的與黏著劑層(X2)相反側之面,貼附熱硬化性薄膜的步驟; 步驟4:加熱前述黏著片,分離黏著劑層(X1)與前述支撐體的步驟; 步驟5:對黏著劑層(X2)照射能量線,分離黏著劑層(X2)與前述加工對象物的步驟。[Manufacturing method of semiconductor device] A manufacturing method of a semiconductor device according to one aspect of the present invention is a manufacturing method of a semiconductor device using an adhesive sheet, wherein the adhesive sheet sequentially comprises an adhesive layer (X1) containing thermally expandable particles, a substrate (Y), and an adhesive layer (X2) whose adhesive force is reduced by hardening by irradiating energy beams. The manufacturing method comprises the following steps 1 to 5: Step 1: Attaching a processing object to the adhesive layer (X2) of the adhesive sheet, and attaching a support body to the adhesive layer of the adhesive sheet (X1); Step 2: performing one or more processing selected from grinding and slicing on the aforementioned processing object; Step 3: attaching a thermosetting film to the surface of the processing object on the opposite side of the adhesive layer (X2) after performing the aforementioned processing; Step 4: heating the aforementioned adhesive sheet to separate the adhesive layer (X1) from the aforementioned support; Step 5: irradiating the adhesive layer (X2) with energy rays to separate the adhesive layer (X2) from the aforementioned processing object.

此處,本說明書中,所謂「半導體裝置」,係指可藉由利用半導體特性發揮機能的裝置全體。可舉例例如,具備積體電路之晶圓、具備積體電路之經薄化的晶圓、具備積體電路之晶片、具備積體電路之經薄化的晶片、含此等晶片之電子零件,及具備該電子零件之電子機器類等。 又,作為本發明之一態樣的半導體裝置之製造方法中被施以加工處理的「加工對象物」,雖可舉例具代表性的半導體晶圓及半導體晶片,但只要可適用本發明之製造方法者便無特別限定。Here, in this specification, the so-called "semiconductor device" refers to all devices that can function by utilizing semiconductor characteristics. Examples include wafers with integrated circuits, thinned wafers with integrated circuits, chips with integrated circuits, thinned chips with integrated circuits, electronic components containing these chips, and electronic machines with the electronic components. In addition, as a "processing object" to be processed in the manufacturing method of a semiconductor device as one aspect of the present invention, although representative semiconductor wafers and semiconductor chips can be cited, there is no particular limitation as long as the manufacturing method of the present invention is applicable.

若依據本發明之一態樣的半導體裝置之製造方法,加工對象物,以貼附於藉由照射能量線進行硬化而黏著力降低之黏著劑層(X2)的狀態被加工。若依據此方法,加工處理後,藉由對黏著劑層(X2)照射能量線可自黏著片分離加工對象物,加工對象物並沒有被熱膨脹性粒子及經膨脹之黏著劑污染之事。According to a method for manufacturing a semiconductor device of one aspect of the present invention, the object to be processed is processed in a state where it is attached to an adhesive layer (X2) that has been hardened by irradiation with energy rays and has reduced adhesive strength. According to this method, after processing, the object to be processed can be separated from the adhesive sheet by irradiating the adhesive layer (X2) with energy rays, and the object to be processed is not contaminated by thermally expandable particles and expanded adhesive.

又,若依據本發明之一態樣的半導體裝置之製造方法,對加工對象物施以加工處理時,支撐體貼附於含有熱膨脹性粒子之黏著劑層(X1)。 黏著劑層(X1),藉由加熱至熱膨脹性粒子之膨脹開始溫度(t)以上,於表面形成起因於經膨脹之熱膨脹性粒子的凹凸,與被黏著體之接觸面積降低。藉由接觸面積的降低,黏著劑層(X1)與被黏著體之密著性顯著地降低,不施以剝開力,而藉由黏著片側之本身重量或被黏著體之本身重量,黏著片與支撐體可快速地分離。例如,加熱剝離時,藉由將貼附有加工對象物之黏著片朝向下側,可使該貼附有加工對象物之黏著片因重力自支撐體落下而分離。 如此一來,由於是黏著劑層(X1)藉由加熱而顯著降低與支撐體之密著性者,故加熱剝離前之密著性可設計成很高。因此,若依據本發明之一態樣的半導體裝置之製造方法,可抑制黏著片與支撐體之密著性不足所致之加工對象物的振動、位置偏移等,可得到優異的加工精度及加工速度。 此外,本說明書中,將不對黏著片施以拉開剝離力,而黏著片成為自被黏著體剝離的狀態,或是剝落之事稱為「自我剝離」。又,將如此之性質稱為「自我剝離性」。Furthermore, when a processing object is processed according to a method for manufacturing a semiconductor device according to one aspect of the present invention, the support body is attached to an adhesive layer (X1) containing thermally expandable particles. The adhesive layer (X1) is heated to a temperature above the expansion start temperature (t) of the thermally expandable particles, and irregularities are formed on the surface of the adhesive layer (X1) due to the expanded thermally expandable particles, and the contact area with the adherend is reduced. Due to the reduction in the contact area, the adhesion between the adhesive layer (X1) and the adherend is significantly reduced, and the adhesive sheet and the support body can be quickly separated without applying a peeling force, but by the weight of the adhesive sheet side itself or the weight of the adherend itself. For example, during heat peeling, by orienting the adhesive sheet with the object to be processed downward, the adhesive sheet with the object to be processed can be separated by falling from the support due to gravity. In this way, since the adhesive layer (X1) significantly reduces the adhesion to the support by heating, the adhesion before heat peeling can be designed to be very high. Therefore, if a manufacturing method of a semiconductor device according to one aspect of the present invention is used, vibration and positional deviation of the object to be processed caused by insufficient adhesion between the adhesive sheet and the support can be suppressed, and excellent processing accuracy and processing speed can be obtained. In addition, in this specification, the state in which the adhesive sheet is peeled off from the adherend without applying a pulling and peeling force, or the state in which the adhesive sheet is peeled off, is referred to as "self-peeling". In addition, such a property is referred to as "self-peeling property".

以下,先說明關於本發明之一態樣的半導體裝置之製造方法中使用的黏著片,之後,再詳細說明關於本發明之一態樣的半導體裝置之製造方法所含之各步驟。Hereinafter, an adhesive sheet used in a method for manufacturing a semiconductor device according to one aspect of the present invention will be described first, and then each step included in the method for manufacturing a semiconductor device according to one aspect of the present invention will be described in detail.

[黏著片] 本發明之一態樣中使用的黏著片,係依序具有含有熱膨脹性粒子之黏著劑層(X1)、基材(Y)與藉由照射能量線進行硬化而黏著力降低之黏著劑層(X2)的黏著片。 本發明之一態樣中使用的黏著片,可於黏著劑層(X1)與黏著劑層(X2)之一方的黏著表面或兩方的黏著表面上具有剝離材。[Adhesive sheet] The adhesive sheet used in one embodiment of the present invention is an adhesive sheet having, in order, an adhesive layer (X1) containing thermally expandable particles, a base material (Y), and an adhesive layer (X2) whose adhesive force is reduced by curing by irradiation with energy rays. The adhesive sheet used in one embodiment of the present invention may have a release material on the adhesive surface of one of the adhesive layers (X1) and the adhesive layer (X2) or on the adhesive surfaces of both.

接著,一邊參照圖式,一邊更具體說明關於本發明之一態樣中使用的黏著片的構成。Next, the structure of the adhesive sheet used in one embodiment of the present invention will be described in more detail with reference to the drawings.

作為本發明之一態樣中使用的黏著片,例如,可舉例如圖1(a)所示之兩面黏著片1a,其具有基材(Y)以黏著劑層(X1)及黏著劑層(X2)夾持的構成。 又,如圖1(b)所示之兩面黏著片1b,可做成於黏著劑層(X1)之黏著表面上進一步具有剝離材10a,於黏著劑層(X2)之黏著表面上進一步具有剝離材10b的構成。As an adhesive sheet used in one embodiment of the present invention, for example, a double-sided adhesive sheet 1a as shown in FIG. 1(a) can be exemplified, which has a structure in which a base material (Y) is sandwiched by an adhesive layer (X1) and an adhesive layer (X2). In addition, a double-sided adhesive sheet 1b as shown in FIG. 1(b) can be made into a structure in which a release material 10a is further provided on the adhesive surface of the adhesive layer (X1), and a release material 10b is further provided on the adhesive surface of the adhesive layer (X2).

此外,圖1(b)所示之兩面黏著片1b中,將剝離材10a自黏著劑層(X1)剝離時的剝離力與將剝離材10b自黏著劑層(X2)剝離時的剝離力為相同程度時,若欲將雙方剝離材向外側拉開剝離,則有黏著劑層隨著2個剝離材斷開產生拉開剝離現象。由抑制如此之現象的觀點來看,2個剝離材10a、10b,使用設計成自彼此貼附之黏著劑層的剝離力相異之2種剝離材較佳。In addition, in the double-sided adhesive sheet 1b shown in FIG1(b), when the peeling force when peeling the release material 10a from the adhesive layer (X1) and the peeling force when peeling the release material 10b from the adhesive layer (X2) are the same, if the release materials on both sides are pulled apart to peel, the adhesive layer is broken along with the two release materials, resulting in the phenomenon of being pulled apart and peeled. From the viewpoint of suppressing such a phenomenon, it is better to use two kinds of release materials designed to have different peeling forces from the adhesive layers attached to each other as the two release materials 10a and 10b.

作為其他態樣之黏著片,亦可為圖1(a)所示之兩面黏著片1a中,具有將於黏著劑層(X1)及黏著劑層(X2)之一方的黏著表面層合有兩面施以剝離處理之剝離材而成者捲成輥狀的構成之兩面黏著片。As another embodiment of the adhesive sheet, it may be a double-sided adhesive sheet 1a as shown in FIG. 1( a) , in which the adhesive surface of one of the adhesive layer (X1) and the adhesive layer (X2) is laminated with a release material having both sides subjected to a release treatment and rolled into a roll.

本發明之一態樣中使用的黏著片,於基材(Y)與黏著劑層(X1)之間,可具有其他層,亦可不具有其他層。又,本發明之一態樣中使用的黏著片,於基材(Y)與黏著劑層(X2)之間,可具有其他層,亦可不具有其他層。 惟,於與黏著劑層(X1)之黏著表面相反側的面上,直接層合可抑制該面之膨脹的層較佳,直接層合基材(Y)更佳。The adhesive sheet used in one embodiment of the present invention may or may not have other layers between the substrate (Y) and the adhesive layer (X1). Furthermore, the adhesive sheet used in one embodiment of the present invention may or may not have other layers between the substrate (Y) and the adhesive layer (X2). However, it is preferred to directly laminate a layer that can suppress the expansion of the surface on the opposite side of the adhesive surface of the adhesive layer (X1), and it is more preferred to directly laminate the substrate (Y).

<基材(Y)> 作為基材(Y)之形成材料,可舉例例如樹脂、金屬、紙材等,可視本發明之一態樣中使用的黏著片之用途適當地選擇。<Base material (Y)> The base material (Y) may be, for example, resin, metal, paper, etc., and may be appropriately selected depending on the purpose of the adhesive sheet used in one embodiment of the present invention.

作為樹脂,可舉例例如,聚乙烯、聚丙烯等之聚烯烴樹脂;聚氯乙烯、聚二氯亞乙烯、聚乙烯醇、乙烯-乙酸乙烯酯共聚物、乙烯-乙烯醇共聚物等之乙烯基系樹脂;聚對酞酸乙二酯、聚對酞酸丁二酯、聚萘二甲酸乙二醇酯等之聚酯系樹脂;聚苯乙烯;丙烯腈-丁二烯-苯乙烯共聚物;三乙酸纖維素;聚碳酸酯;聚胺基甲酸酯、丙烯酸基改質聚胺基甲酸酯等之胺基甲酸酯樹脂;聚甲基戊烯;聚碸;聚醚醚酮;聚醚碸;聚伸苯基硫化物;聚醚醯亞胺、聚醯亞胺等之聚醯亞胺系樹脂;聚醯胺系樹脂;丙烯酸樹脂;氟系樹脂等。 作為金屬,可舉例例如鋁、錫、鉻、鈦等。 作為紙材,可舉例例如薄葉紙、中質紙、上質紙、含浸紙、塗層紙、美術紙、硫酸紙、半透明紙(glassine paper)等。 此等之中,以聚對酞酸乙二酯、聚對酞酸丁二酯、聚萘二甲酸乙二醇酯等之聚酯系樹脂較佳。Examples of the resin include polyolefin resins such as polyethylene and polypropylene; vinyl resins such as polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, ethylene-vinyl acetate copolymer, and ethylene-vinyl alcohol copolymer; polyester resins such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polystyrene; acrylonitrile-butadiene-styrene copolymer; cellulose triacetate; polycarbonate; urethane resins such as polyurethane and acrylic modified polyurethane; polymethylpentene; polysulfone; polyetheretherketone; polyethersulfone; polyphenylene sulfide; polyimide resins such as polyetherimide and polyimide; polyamide resins; acrylic resins; fluorine resins, etc. Examples of metals include aluminum, tin, chromium, and titanium. Examples of paper materials include thin paper, medium-quality paper, high-quality paper, impregnated paper, coated paper, art paper, sulphate paper, and translucent paper (glassine paper). Among these, polyester resins such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate are preferred.

此等之形成材料,可由1種所構成,亦可併用2種以上。 作為併用2種以上之形成材料而成的基材(Y),可舉例將紙材以聚乙烯等之熱可塑性樹脂層合而成者、於含有樹脂之樹脂薄膜或片材之表面形成金屬層而成者。 作為金屬層之形成方法,可舉例例如,將金屬藉由真空蒸鍍、濺鍍、離子鍍等之PVD法進行蒸鍍的方法、使用一般黏著劑貼附金屬箔的方法等。These forming materials may be composed of one kind or two or more kinds may be used in combination. As a base material (Y) formed by using two or more forming materials in combination, there can be cited a method in which a paper material is laminated with a thermoplastic resin such as polyethylene, and a metal layer is formed on the surface of a resin film or sheet containing a resin. As a method for forming a metal layer, there can be cited a method in which a metal is evaporated by a PVD method such as vacuum evaporation, sputtering, ion plating, etc., and a method in which a metal foil is attached using a general adhesive.

由提升基材(Y)與層合之其他層之層間密著性的觀點來看,亦可對基材(Y)之表面,施以利用氧化法、凹凸化法等之表面處理、易接著處理、底漆處理等。 作為氧化法,可舉例例如電暈放電處理、電漿放電處理、鉻酸處理(濕式)、熱風處理、臭氧照射處理、紫外線照射處理等。又,作為凹凸化法,可舉例例如噴砂法、溶劑處理法等。From the perspective of improving the interlayer adhesion between the substrate (Y) and other laminated layers, the surface of the substrate (Y) may be subjected to surface treatments such as oxidation and embossing, easy-to-weld treatment, primer treatment, etc. As oxidation methods, examples include corona discharge treatment, plasma discharge treatment, chromic acid treatment (wet), hot air treatment, ozone irradiation treatment, and ultraviolet irradiation treatment. In addition, as embossing methods, examples include sandblasting and solvent treatment.

基材(Y),亦可與上述樹脂一同,含有例如紫外線吸收劑、光安定劑、抗氧化劑、防靜電劑、滑劑、防黏連劑、著色劑等作為基材用添加劑。此等之基材用添加劑,可分別單獨使用,亦可併用2種以上。 基材(Y)與上述樹脂一同含有基材用添加劑時,各別的基材用添加劑之含量,相對於上述樹脂100質量份而言,較佳為0.0001~20質量份,更佳為0.001~10質量份。The substrate (Y) may also contain, together with the above-mentioned resin, an ultraviolet absorber, a light stabilizer, an antioxidant, an antistatic agent, a lubricant, an anti-adhesion agent, a coloring agent, etc. as a substrate additive. These substrate additives may be used alone or in combination of two or more. When the substrate (Y) contains a substrate additive together with the above-mentioned resin, the content of each substrate additive is preferably 0.0001 to 20 parts by mass, and more preferably 0.001 to 10 parts by mass, relative to 100 parts by mass of the above-mentioned resin.

基材(Y),為非熱膨脹性層較佳。 基材(Y)為非熱膨脹性層時,由上述式算出之基材(Y)的體積變化率(%)未達5%,較佳為未達2%,更佳為未達1%,進而佳為未達0.1%,再更佳為未達0.01%。The substrate (Y) is preferably a non-thermally expansive layer. When the substrate (Y) is a non-thermally expansive layer, the volume change rate (%) of the substrate (Y) calculated by the above formula is less than 5%, preferably less than 2%, more preferably less than 1%, further preferably less than 0.1%, and even more preferably less than 0.01%.

基材(Y),在不違反本發明之目的的範圍內,雖亦可含有熱膨脹性粒子,但不含熱膨脹性粒子較佳。 基材(Y)含有熱膨脹性粒子時,其含量越少越好,相對於基材(Y)之總質量(100質量%)而言,較佳為未達3質量%,更佳為未達1質量%,進而佳為未達0.1質量%,再更佳為未達0.01質量%,再更佳為未達0.001質量%。The substrate (Y) may contain heat-expandable particles within the scope of the present invention, but preferably does not contain heat-expandable particles. When the substrate (Y) contains heat-expandable particles, the content is as small as possible, preferably less than 3% by mass, more preferably less than 1% by mass, more preferably less than 0.1% by mass, more preferably less than 0.01% by mass, and even more preferably less than 0.001% by mass relative to the total mass of the substrate (Y) (100% by mass).

[基材(Y)之物性等] (基材(Y)之23℃下之儲存模數E’(23)) 基材(Y)之23℃下之儲存模數E’(23),較佳為5.0×107 ~ 5.0×109 Pa,更佳為5.0×108 ~4.5×109 Pa,進而佳為1.0×109 ~ 4.0×109 Pa。 基材(Y)之儲存模數E’(23)若為5.0×107 Pa以上,則可有效地抑制黏著劑層(X1)之基材(Y)側的面之膨脹的同時,可提升黏著片之耐變形性。另一方面,基材(Y)之儲存模數E’(23)若為5.0×109 Pa以下,則可提升黏著片之操作性。 此外,本說明書中,基材(Y)之儲存模數E’(23),係指藉由實施例中記載之方法所測定之值。[Physical properties of substrate (Y)] (Storage modulus E'(23) of substrate (Y) at 23°C) The storage modulus E'(23) of substrate (Y) at 23°C is preferably 5.0×10 7 to 5.0×10 9 Pa, more preferably 5.0×10 8 to 4.5×10 9 Pa, and further preferably 1.0×10 9 to 4.0×10 9 Pa. If the storage modulus E'(23) of substrate (Y) is 5.0×10 7 Pa or more, it is possible to effectively suppress the expansion of the surface of the adhesive layer (X1) on the substrate (Y) side and improve the deformation resistance of the adhesive sheet. On the other hand, if the storage modulus E'(23) of the substrate (Y) is 5.0×10 9 Pa or less, the handling properties of the adhesive sheet can be improved. In addition, in this specification, the storage modulus E'(23) of the substrate (Y) refers to a value measured by the method described in the embodiment.

(基材(Y)之膨脹開始溫度(t)中之儲存模數E’(t)) 基材(Y)之熱膨脹性粒子之膨脹開始溫度(t)中之儲存模數E’(t),較佳為5.0×106 ~4.0×109 Pa,更佳為2.0×108 ~3.0×109 Pa,進而佳為5.0×108 ~2.5×109 Pa。 基材(Y)之儲存模數E’(t)若為5.0×106 Pa以上,則可有效地抑制黏著劑層(X1)之基材(Y)側的面之膨脹的同時,可提升黏著片之耐變形性。另一方面,基材(Y)之儲存模數E’(t)若為4.0×109 Pa以下,則可提升黏著片之操作性。 此外,本說明書中,基材(Y)之儲存模數E’(t),係指藉由實施例中記載之方法所測定之值。(Storage modulus E'(t) at expansion starting temperature (t) of substrate (Y)) The storage modulus E'(t) at expansion starting temperature (t) of the thermally expandable particles of substrate (Y) is preferably 5.0×10 6 ~4.0×10 9 Pa, more preferably 2.0×10 8 ~3.0×10 9 Pa, and further preferably 5.0×10 8 ~2.5×10 9 Pa. If the storage modulus E'(t) of substrate (Y) is 5.0×10 6 Pa or more, the expansion of the surface of the adhesive layer (X1) on the substrate (Y) side can be effectively suppressed, and the deformation resistance of the adhesive sheet can be improved. On the other hand, if the storage modulus E'(t) of the substrate (Y) is 4.0×10 9 Pa or less, the handling properties of the adhesive sheet can be improved. In addition, in this specification, the storage modulus E'(t) of the substrate (Y) refers to the value measured by the method described in the embodiment.

(基材(Y)之厚度) 基材(Y)之厚度,較佳為5~500μm,更佳為15~300 μm,進而佳為20~200μm。基材(Y)之厚度若為5μm以上,則可提升黏著片之耐變形性。另一方面,基材(Y)之厚度若為500μm以下,則可提升黏著片之操作性。 此外,本說明書中,基材(Y)之厚度,係指藉由實施例中記載之方法所測定之值。(Thickness of substrate (Y)) The thickness of substrate (Y) is preferably 5~500μm, more preferably 15~300μm, and further preferably 20~200μm. If the thickness of substrate (Y) is 5μm or more, the deformation resistance of the adhesive sheet can be improved. On the other hand, if the thickness of substrate (Y) is 500μm or less, the operability of the adhesive sheet can be improved. In addition, in this specification, the thickness of substrate (Y) refers to the value measured by the method described in the embodiment.

<黏著劑層(X1)> 黏著劑層(X1),為含有熱膨脹性粒子之黏著劑層。 黏著劑層(X1),係藉由加熱至熱膨脹性粒子之膨脹開始溫度(t)以上,於表面形成起因於經膨脹之熱膨脹性粒子的凹凸,可降低與被黏著體之密著性的層。 以下,說明關於黏著劑層(X1)中所含有的各成分。<Adhesive layer (X1)> The adhesive layer (X1) is an adhesive layer containing heat-expandable particles. The adhesive layer (X1) is a layer that forms irregularities on the surface due to the expanded heat-expandable particles by heating to a temperature higher than the expansion start temperature (t) of the heat-expandable particles, thereby reducing the adhesion to the adherend. The following describes the components contained in the adhesive layer (X1).

[熱膨脹性粒子] 黏著劑層(X1)中所含有的熱膨脹性粒子之膨脹開始溫度(t),並無特別限定,只要視黏著片之用途適當地調整即可。例如,由抑制因對加工對象物進行研削時等之溫度上升所致之熱膨脹性粒子的膨脹之觀點來看,較佳為50℃以上,更佳為55℃以上,進而佳為60℃以上,再更佳為70℃以上。另一方面,由抑制加熱剝離時貼附於加工對象物之熱硬化性薄膜的硬化之觀點來看,較佳為110℃以下,更佳為105℃以下,進而佳為100℃以下,再更佳為95℃以下。 此外,本說明書中,熱膨脹性粒子之膨脹開始溫度(t),係指基於以下之方法所測定之值。 [熱膨脹性粒子之膨脹開始溫度(t)的測定法] 製作於直徑6.0mm(內徑5.65mm)、深度4.8mm之鋁杯中,加入成為測定對象之熱膨脹性粒子0.5mg,由上方蓋上鋁蓋(直徑5.6mm、厚度0.1mm)之試料。 使用動態黏彈性測定裝置,在於該試料由鋁蓋上部,藉由加壓器施加0.01N之力的狀態下,測定試料之高度。然後,在藉由加壓器施加0.01N之力的狀態下,以10℃/min之升溫速度由20℃加熱至300℃為止,測定加壓器之垂直方向中之變位量,將向正方向之變位開始溫度定為膨脹開始溫度(t)。[Thermal expansion particles] The expansion start temperature (t) of the thermal expansion particles contained in the adhesive layer (X1) is not particularly limited and can be appropriately adjusted depending on the purpose of the adhesive sheet. For example, from the perspective of suppressing the expansion of the thermal expansion particles due to the temperature rise during grinding of the object to be processed, it is preferably 50°C or more, more preferably 55°C or more, further preferably 60°C or more, and further preferably 70°C or more. On the other hand, from the perspective of suppressing the hardening of the thermosetting film attached to the object to be processed during heat peeling, it is preferably 110°C or less, more preferably 105°C or less, further preferably 100°C or less, and further preferably 95°C or less. In addition, in this manual, the expansion start temperature (t) of thermal expansion particles refers to the value measured based on the following method. [Method for measuring the expansion start temperature (t) of thermal expansion particles] In an aluminum cup with a diameter of 6.0 mm (inner diameter of 5.65 mm) and a depth of 4.8 mm, 0.5 mg of thermal expansion particles to be measured is added, and an aluminum cover (diameter of 5.6 mm, thickness of 0.1 mm) is placed from the top. The height of the sample is measured using a dynamic viscoelasticity measuring device while a force of 0.01 N is applied to the sample from the top of the aluminum cover by a pressurizer. Then, the pressure was applied with a force of 0.01N through the pressurizer, and the temperature was raised from 20°C to 300°C at a rate of 10°C/min. The displacement in the vertical direction of the pressurizer was measured, and the temperature at which the displacement in the positive direction started was defined as the expansion start temperature (t).

作為熱膨脹性粒子,以由下述成份構成的微膠囊化發泡劑較佳,前述成份為:由熱可塑性樹脂構成之外殻,與內包於該外殻且加熱至指定溫度而氣化的內包成分。 構成微膠囊化發泡劑之外殻的熱可塑性樹脂並無特別限定,適當選擇於熱膨脹性粒子之膨脹開始溫度(t)下,可發生熔融、熔解、破裂等之狀態變化的材料及組成。 作為上述熱可塑性樹脂,可舉例例如二氯亞乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯基縮丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚二氯亞乙烯、聚碸等。此等之熱可塑性樹脂可單獨使用1種,亦可併用2種以上。As the heat-expandable particles, a microencapsulated foaming agent composed of the following components is preferred: an outer shell composed of a thermoplastic resin, and an inner component encapsulated in the outer shell and vaporized by heating to a specified temperature. The thermoplastic resin constituting the outer shell of the microencapsulated foaming agent is not particularly limited, and a material and composition that can undergo state changes such as melting, dissolving, and rupture at the expansion start temperature (t) of the heat-expandable particles are appropriately selected. As the above-mentioned thermoplastic resin, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, etc. can be cited. These thermoplastic resins may be used alone or in combination of two or more.

作為內包於微膠囊化發泡劑之外殻的成分即內包成分,只要是在熱膨脹性粒子之膨脹開始溫度(t)下膨脹者即可,可舉例例如丙烷、伸丙基、n-丁烷、丁烯、n-戊烷、n-己烷、n-庚烷、n-辛烷、n-壬烷、n-癸烷、異丁烷、異戊烷、異己烷、異庚烷、異辛烷、異壬烷、異癸烷、環丙烷、環丁烷、環戊烷、環己烷、環庚烷、環辛烷、新戊烷、十二烷、異十二烷、環十三烷、己基環己烷、十三烷、十四烷、十五烷、十六烷、十七烷、十八烷、九癸烷、異十三烷、4-甲基十二烷、異十四烷、異十五烷、異十六烷、2,2,4,4,6,8,8-七甲基壬烷、異十七烷、異十八烷、異十九烷、2,6,10,14-四甲基十五烷、環十三烷、庚基環己烷、n-辛基環己烷、環十五烷、壬基環己烷、癸基環己烷、十五烷基環己烷、十六烷基環己烷、十七烷基環己烷、十八烷基環己烷、石油醚等。此等之中,由降低膨脹開始溫度(t),抑制加熱剝離黏著劑層(X1)時貼附於加工對象物之熱硬化性薄膜的硬化之觀點來看,以丙烷、丙烯、丁烯、n-丁烷、異丁烷、異戊烷、新戊烷、n-戊烷、n-己烷、異己烷、n-庚烷、n-辛烷、環丙烷、環丁烷、石油醚等之低沸點液體較佳。 此等之內包成分可單獨使用1種,亦可併用2種以上。 熱膨脹性粒子之膨脹開始溫度(t),可藉由適當選擇內包成分之種類來調整。The component encapsulated in the outer shell of the microcapsule foaming agent, i.e., the inner component, may be any component that expands at the expansion start temperature (t) of the heat-expandable particles, and examples thereof include propane, propylene glycol, n-butane, butene, n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane, isobutane, isopentane, isohexane, isoheptane, isooctane, isononane, isodecane, cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, neopentane, dodecane, isododecane, cyclotridecane, hexylcyclohexane, tridecane, and the like. cyclohexane, heptylcyclohexane, n-octylcyclohexane, cyclopentadecane, nonylcyclohexane, decylcyclohexane, pentadecane, hexadecane, heptadecane, octadecane, nonadecane, isotridecane, 4-methyldodecane, isotetradecane, isopentadecane, isohexadecane, 2,2,4,4,6,8,8-heptamethylnonane, isoheptadecane, isooctadecane, isononadecane, 2,6,10,14-tetramethylpentadecane, cyclotridecane, heptylcyclohexane, n-octylcyclohexane, cyclopentadecane, nonylcyclohexane, decylcyclohexane, pentadecylcyclohexane, hexadecylcyclohexane, heptadecane, octadecylcyclohexane, petroleum ether, etc. Among these, from the viewpoint of lowering the expansion start temperature (t) and inhibiting the hardening of the thermosetting film attached to the object to be processed when the adhesive layer (X1) is peeled off by heating, low boiling point liquids such as propane, propylene, butene, n-butane, isobutane, isopentane, neopentane, n-pentane, n-hexane, isohexane, n-heptane, n-octane, cyclopropane, cyclobutane, petroleum ether, etc. are preferred. These inner components may be used alone or in combination of two or more. The expansion start temperature (t) of the thermally expandable particles can be adjusted by appropriately selecting the type of inner component.

熱膨脹性粒子之熱膨脹前之23℃下之平均粒徑(D50 ),較佳為1~30μm,更佳為4~25μm,進而佳為6~20 μm,再更佳為10~15μm。 此外,所謂熱膨脹性粒子之平均粒徑(D50 ),為體積中位粒徑(D50 ),係指相當於使用雷射繞射式粒度分佈測定裝置(例如,Malvern公司製,製品名「Mastersizer 3000」)測定之膨脹前之熱膨脹性粒子的粒子分佈中,由粒徑小者開始計算之累積體積頻率為50%的粒徑。The average particle size (D 50 ) of the heat-expandable particles at 23° C. before heat expansion is preferably 1 to 30 μm, more preferably 4 to 25 μm, further preferably 6 to 20 μm, and further preferably 10 to 15 μm. In addition, the so-called average particle size (D 50 ) of the heat-expandable particles is the volume median particle size (D 50 ), which refers to the particle size at which the cumulative volume frequency is 50% calculated from the smallest particle size in the particle distribution of the heat-expandable particles before expansion measured using a laser diffraction particle size distribution measuring device (e.g., Mastersizer 3000 manufactured by Malvern Corporation).

熱膨脹性粒子之熱膨脹前之23℃下之90%粒徑(D90 ),較佳為2~60μm,更佳為8~50μm,進而佳為12~ 40μm,再更佳為20~30μm。 此外,所謂熱膨脹性粒子之90%粒徑(D90 ),係指相當於使用上述雷射繞射式粒度分佈測定裝置測定之膨脹前之熱膨脹性粒子的粒子分佈中,由粒徑小者開始計算之累積體積頻率為90%的粒徑。The 90% particle size (D 90 ) of the thermally expansive particles at 23° C. before thermal expansion is preferably 2 to 60 μm, more preferably 8 to 50 μm, further preferably 12 to 40 μm, and further preferably 20 to 30 μm. In addition, the so-called 90% particle size (D 90 ) of the thermally expansive particles refers to a particle size corresponding to 90% of the cumulative volume frequency calculated from the smaller particle size in the particle distribution of the thermally expansive particles before expansion measured using the above-mentioned laser diffraction particle size distribution measuring device.

將熱膨脹性粒子加熱至膨脹開始溫度(t)以上之溫度時的體積最大膨脹率,較佳為1.5~200倍,更佳為2~150倍,進而佳為2.5~120倍,再更佳為3~100倍。The maximum volume expansion rate when the heat-expandable particles are heated to a temperature above the expansion start temperature (t) is preferably 1.5 to 200 times, more preferably 2 to 150 times, further preferably 2.5 to 120 times, and further preferably 3 to 100 times.

熱膨脹性粒子之含量,相對於黏著劑層(X1)之總質量(100質量%)而言,較佳為1~30質量%,更佳為2~25質量%,進而佳為3~20質量%。 熱膨脹性粒子之含量若為1質量%以上,則有提升加熱剝離時之剝離性的傾向。又,熱膨脹性粒子之含量若為30質量%以下,則有黏著劑層(X1)之黏著力成為良好的同時,可抑制加熱剝離時黏著片捲曲,提升操作性的傾向。The content of the heat-expandable particles is preferably 1 to 30 mass%, more preferably 2 to 25 mass%, and further preferably 3 to 20 mass%, relative to the total mass (100 mass%) of the adhesive layer (X1). If the content of the heat-expandable particles is 1 mass% or more, the peeling property during heat peeling tends to be improved. If the content of the heat-expandable particles is 30 mass% or less, the adhesive force of the adhesive layer (X1) becomes good, and the curling of the adhesive sheet during heat peeling tends to be suppressed, thereby improving the operability.

[黏著性樹脂] 黏著劑層(X1)所含有之黏著性樹脂,可視黏著劑層(X1)之形成方法來選擇。 此外,本發明中「黏著性樹脂」之用語,亦廣義包括雖實質上僅由黏著性樹脂所構成之組成物不具有黏著性,但藉由添加可塑化成分等而表現黏著性之樹脂等。[Adhesive resin] The adhesive resin contained in the adhesive layer (X1) can be selected depending on the method of forming the adhesive layer (X1). In addition, the term "adhesive resin" in the present invention also broadly includes resins that exhibit adhesive properties by adding plasticizing components, although the composition consisting of only adhesive resins does not have adhesive properties.

作為黏著劑層(X1)之形成方法,可舉例對含有能量線聚合性成分及熱膨脹性粒子之聚合性組成物(以下,亦稱為「聚合性組成物(x-1A)」)照射能量線,形成包含上述能量線聚合性成分之聚合物與熱膨脹性粒子之黏著劑層(X1)的方法、塗佈含有黏著性樹脂及熱膨脹性粒子之黏著劑組成物(以下,亦稱為「黏著劑組成物(x-1B)」)形成黏著劑層(X1)的方法等。 接著,分別說明關於使用聚合性組成物(x-1A)的方法及使用黏著劑組成物(x-1B)的方法中之黏著性樹脂的較佳態樣。As a method for forming the adhesive layer (X1), there can be exemplified a method of irradiating a polymerizable composition containing an energy ray polymerizable component and thermally expandable particles (hereinafter, also referred to as "polymerizable composition (x-1A)") with energy rays to form an adhesive layer (X1) containing a polymer of the energy ray polymerizable component and thermally expandable particles, a method of coating an adhesive composition containing an adhesive resin and thermally expandable particles (hereinafter, also referred to as "adhesive composition (x-1B)") to form an adhesive layer (X1), etc. Next, the preferred embodiment of the adhesive resin in the method using the polymerizable composition (x-1A) and the method using the adhesive composition (x-1B) will be described respectively.

-使用聚合性組成物(x-1A)的方法- 使用聚合性組成物(x-1A)的方法,係對含有能量線聚合性成分及熱膨脹性粒子之聚合性組成物(x-1A)照射能量線,形成包含該能量線聚合性成分之聚合物與熱膨脹性粒子之黏著劑層(X1)的方法。因此,若依據本方法,黏著劑層(X1)所含有之黏著性樹脂,成為使聚合性組成物(x-1A)所含有之能量線聚合性成分進行能量線聚合而成之聚合物。 由於聚合性組成物(x-1A),係藉由之後的能量線聚合而使能量線聚合性成分高分子量化者,故形成層時,可含有低分子量之能量線聚合性成分。因此聚合性組成物(x-1A),即使不使用稀釋劑等之溶劑亦可調整成適合塗佈之黏度。其結果,使用聚合性組成物(x-1A)形成黏著劑層(X1)時,可省略用以去除溶劑之加熱乾燥,可抑制加熱乾燥時中之熱膨脹性粒子無預期的膨脹。進而,由於不需要將熱膨脹性粒子之膨脹開始溫度(t)調整到加熱乾燥溫度以上,使減低熱膨脹性粒子之膨脹開始溫度(t)變得可能,即使在將附DAF之半導體晶片等之容易熱變化者作為被黏著體之情形中,亦能抑制加熱剝離時之加熱所致之被黏著體的熱變化。-Method using polymerizable composition (x-1A)- The method using polymerizable composition (x-1A) is a method of irradiating a polymerizable composition (x-1A) containing an energy ray polymerizable component and thermally expandable particles with energy ray to form an adhesive layer (X1) containing a polymer of the energy ray polymerizable component and thermally expandable particles. Therefore, according to this method, the adhesive resin contained in the adhesive layer (X1) becomes a polymer formed by energy ray polymerization of the energy ray polymerizable component contained in the polymerizable composition (x-1A). Since the polymerizable composition (x-1A) is one in which the energy ray polymerizable component is high molecular weighted by subsequent energy ray polymerization, it can contain a low molecular weight energy ray polymerizable component when forming the layer. Therefore, the polymerizable composition (x-1A) can be adjusted to a viscosity suitable for coating even without using a solvent such as a diluent. As a result, when the polymerizable composition (x-1A) is used to form the adhesive layer (X1), the heat drying for removing the solvent can be omitted, and the unexpected expansion of the thermally expansive particles during the heat drying can be suppressed. Furthermore, since it is not necessary to adjust the expansion start temperature (t) of the thermally expansive particles to above the heat drying temperature, it becomes possible to reduce the expansion start temperature (t) of the thermally expansive particles. Even in the case of using a semiconductor chip with DAF that is easily thermally changed as the adherend, the thermal change of the adherend caused by heating during thermal peeling can be suppressed.

聚合性組成物(x-1A)所含有的能量線聚合性成分,係藉由能量線之照射進行聚合的成分,具有能量線聚合性官能基者。 作為能量線聚合性官能基,可舉例例如(甲基)丙烯醯基、乙烯基、烯丙基等之具有碳-碳雙鍵者。此外,本說明書中,有將如(甲基)丙烯醯基、烯丙基等,其一部分包含乙烯基或取代乙烯基之官能基,與乙烯基或取代乙烯基其本身總稱為「含有乙烯基之基」。The energy-ray polymerizable component contained in the polymerizable composition (x-1A) is a component that polymerizes by irradiation with energy rays and has an energy-ray polymerizable functional group. As energy-ray polymerizable functional groups, there can be cited those having a carbon-carbon double bond such as (meth)acryl, vinyl, allyl, etc. In addition, in this specification, functional groups such as (meth)acryl, allyl, etc., a part of which contains vinyl or substituted vinyl, and vinyl or substituted vinyl itself are collectively referred to as "vinyl-containing groups".

聚合性組成物(x-1A),作為能量線聚合性成分,含有具有能量線聚合性官能基之單體(a1) (以下,亦稱為「(a1)成分」)及具有能量線聚合性官能基之預聚物(a2) (以下,亦稱為「(a2)成分」)較佳。 此外,本說明書中,所謂預聚物,係指單體聚合而成的化合物,可藉由進一步之聚合而構成聚合物的化合物。The polymerizable composition (x-1A) preferably contains, as energy ray polymerizable components, a monomer (a1) having an energy ray polymerizable functional group (hereinafter, also referred to as "(a1) component") and a prepolymer (a2) having an energy ray polymerizable functional group (hereinafter, also referred to as "(a2) component"). In addition, in this specification, the so-called prepolymer refers to a compound formed by polymerization of monomers, and a compound that can constitute a polymer by further polymerization.

(具有能量線聚合性官能基的單體(a1)) 作為具有能量線聚合性官能基的單體(a1),只要是具有能量線聚合性官能基的單體即可,能量線聚合性官能基之外,亦可具有烴基、能量線聚合性官能基以外的官能基等。(Monomer (a1) having energy-ray polymerizable functional groups) The monomer (a1) having energy-ray polymerizable functional groups may be any monomer having energy-ray polymerizable functional groups, and may have a alkyl group, a functional group other than energy-ray polymerizable functional groups, etc. in addition to the energy-ray polymerizable functional groups.

作為(a1)成分所具有的烴基,可舉例例如脂肪族烴基、芳香族烴基、組合此等而成之基等。 脂肪族烴基,可為直鏈狀或支鏈狀之脂肪族烴基,亦可為脂環式烴基。 作為直鏈狀或支鏈狀之脂肪族烴基,可舉例例如甲基、乙基、n-丙基、異丙基、n-丁基、三級丁基、sec-丁基、n-戊基、n-己基、2-乙基己基、n-辛基、異辛基、n-癸基、n-十二烷基、n-肉豆蔻基、n-棕櫚基、n-硬脂基等之碳數1~20之脂肪族烴基。 作為脂環式烴基,可舉例例如環戊基、環己基、異莰基等之碳數3~20之脂環式烴基。 作為芳香族烴基,可舉例例如苯基。 作為組合脂肪族烴基與芳香族烴基而成之基,可舉例例如苯氧基乙基、苄基。 此等之中,(a1)成分,由更提升黏著劑層(X1)之黏著力的觀點來看,含有具有能量線聚合性官能基與直鏈狀或支鏈狀之脂肪族烴基的單體(a1-1) (以下,亦稱為「(a1-1)成分」)、具有能量線聚合性官能基與脂環式烴基之單體(a1-2) (以下,亦稱為「(a1-2)成分」)等較佳。Examples of the alkyl group possessed by the component (a1) include aliphatic alkyl groups, aromatic alkyl groups, and groups formed by combining these groups. The aliphatic alkyl group may be a linear or branched aliphatic alkyl group, or an alicyclic alkyl group. Examples of the linear or branched aliphatic alkyl group include aliphatic alkyl groups having 1 to 20 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, tertiary butyl, sec-butyl, n-pentyl, n-hexyl, 2-ethylhexyl, n-octyl, isooctyl, n-decyl, n-dodecyl, n-myristyl, n-palmityl, and n-stearyl. Examples of the alicyclic alkyl group include alicyclic alkyl groups having 3 to 20 carbon atoms such as cyclopentyl, cyclohexyl, and isoborneol. Examples of the aromatic alkyl group include phenyl. Examples of the group formed by combining an aliphatic alkyl group and an aromatic alkyl group include phenoxyethyl and benzyl. Among these, the component (a1) is preferably a monomer (a1-1) having an energy ray polymerizable functional group and a linear or branched aliphatic hydrocarbon group (hereinafter, also referred to as "component (a1-1)"), or a monomer (a1-2) having an energy ray polymerizable functional group and an alicyclic hydrocarbon group (hereinafter, also referred to as "component (a1-2)").

(a1)成分為含有(a1-1)成分之情形中,其含量,相對於(a1)成分之合計(100質量%)而言,較佳為20~80質量%,更佳為40~70質量%,進而佳為50~60質量%。 (a1)成分為含有(a1-2)成分之情形中,其含量,相對於(a1)成分之合計(100質量%)而言,較佳為5~60質量%,更佳為10~40質量%,進而佳為20~30質量%。When the component (a1) contains the component (a1-1), its content is preferably 20 to 80% by mass, more preferably 40 to 70% by mass, and even more preferably 50 to 60% by mass relative to the total (100% by mass) of the component (a1). When the component (a1) contains the component (a1-2), its content is preferably 5 to 60% by mass, more preferably 10 to 40% by mass, and even more preferably 20 to 30% by mass relative to the total (100% by mass) of the component (a1).

作為具有能量線聚合性官能基與能量線聚合性官能基以外之官能基的單體,可舉例具有作為能量線聚合性官能基以外之官能基,例如羥基、羧基、硫醇基、1或2級胺基等之單體。此等之中,(a1)成分,由更提升黏著劑層(X1)之形成性之觀點來看,含有具有能量線聚合性官能基與羥基之單體(a1-3) (以下,亦稱為「(a1-3)成分」)較佳。 (a1)成分含有(a1-3)成分之情形中,其含量,相對於(a1)成分之合計(100質量%)而言,較佳為1~60質量%,更佳為5~30質量%,進而佳為10~20質量%。As monomers having energy-ray polymerizable functional groups and functional groups other than energy-ray polymerizable functional groups, monomers having functional groups other than energy-ray polymerizable functional groups, such as hydroxyl groups, carboxyl groups, thiol groups, primary or secondary amine groups, etc., can be cited. Among these, component (a1) preferably contains a monomer (a1-3) having energy-ray polymerizable functional groups and hydroxyl groups (hereinafter, also referred to as "component (a1-3)") from the viewpoint of further improving the formability of the adhesive layer (X1). In the case where component (a1) contains component (a1-3), its content is preferably 1 to 60 mass%, more preferably 5 to 30 mass%, and further preferably 10 to 20 mass% relative to the total (100 mass%) of component (a1).

(a1)成分所具有的能量線聚合性官能基的數可為1個,亦可為2個以上。又,由更提升黏著劑層(X1)之自我剝離性的觀點來看,(a1)成分,含有具有3個以上能量線聚合性官能基之單體(a1-4) (以下,亦稱為「(a1-4)成分」)較佳。 (a1)成分含有(a1-4)成分之情形中,其含量,相對於(a1)成分之合計(100質量%)而言,,較佳為1~20質量%,更佳為2~15質量%,進而佳為3~10質量%。The number of energy-ray polymerizable functional groups possessed by the component (a1) may be 1 or 2 or more. In addition, from the viewpoint of further improving the self-peeling property of the adhesive layer (X1), the component (a1) preferably contains a monomer (a1-4) having 3 or more energy-ray polymerizable functional groups (hereinafter also referred to as "component (a1-4)"). In the case where the component (a1) contains the component (a1-4), its content is preferably 1 to 20% by mass, more preferably 2 to 15% by mass, and further preferably 3 to 10% by mass relative to the total (100% by mass) of the component (a1).

作為具有1個能量線聚合性官能基之單體,為具有1個含有乙烯基之基之單體(以下,亦稱為「聚合性乙烯基單體」)較佳。 作為具有2個以上能量線聚合性官能基之單體,為具有2個以上(甲基)丙烯醯基之單體(以下,亦稱為「多官能(甲基)丙烯酸酯單體」)較佳。藉由(a1)成分含有上述化合物,可提升聚合此等而得之黏著劑的凝集力,形成剝離後之被黏著體污染少的黏著劑層(X1)。As a monomer having one energy ray polymerizable functional group, a monomer having one vinyl group (hereinafter also referred to as a "polymerizable vinyl monomer") is preferred. As a monomer having two or more energy ray polymerizable functional groups, a monomer having two or more (meth)acryloyl groups (hereinafter also referred to as a "multifunctional (meth)acrylate monomer") is preferred. By containing the above-mentioned compounds in the component (a1), the cohesive force of the adhesive obtained by polymerizing these can be improved, forming an adhesive layer (X1) with less contamination of the adherend after peeling.

《聚合性乙烯基單體》 作為聚合性乙烯基單體,只要是具有含有乙烯基之基者便無特別限定,可適當使用以往公知者。 聚合性乙烯基單體可單獨使用1種,亦可併用2種以上。《Polymerizable vinyl monomer》 As the polymerizable vinyl monomer, there is no particular limitation as long as it has a vinyl group, and conventionally known monomers can be appropriately used. The polymerizable vinyl monomer can be used alone or in combination of two or more.

作為聚合性乙烯基單體,可舉例例如甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、丙基(甲基)丙烯酸酯、丁基(甲基)丙烯酸酯、戊基(甲基)丙烯酸酯、己基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、異辛基(甲基)丙烯酸酯、癸基(甲基)丙烯酸酯、十二烷基(甲基)丙烯酸酯、肉豆蔻基(甲基)丙烯酸酯、棕櫚基(甲基)丙烯酸酯、硬脂基(甲基)丙烯酸酯等之相當於上述(a1-1)成分的化合物;環己基(甲基)丙烯酸酯、異莰基(甲基)丙烯酸酯等之相當於上述(a1-2)成分的化合物;苯氧基乙基(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯、聚氧化烯改質(甲基)丙烯酸酯等之於分子內不具有含有乙烯基之基以外之官能基的(甲基)丙烯酸酯等。此等之中,以2-乙基己基丙烯酸酯、異莰基丙烯酸酯較佳。Examples of the polymerizable vinyl monomer include compounds corresponding to the above-mentioned component (a1-1), such as methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, decyl (meth)acrylate, dodecyl (meth)acrylate, myristyl (meth)acrylate, palmityl (meth)acrylate, and stearyl (meth)acrylate; compounds corresponding to the above-mentioned component (a1-2), such as cyclohexyl (meth)acrylate and isoborneol (meth)acrylate; and (meth)acrylates having no functional group other than a vinyl group in the molecule, such as phenoxyethyl (meth)acrylate, benzyl (meth)acrylate, and polyoxyalkylene-modified (meth)acrylate. Among these, 2-ethylhexyl acrylate and isoborneol acrylate are preferred.

聚合性乙烯基單體,可為於分子內進一步具有含有乙烯基之基以外之官能基者。作為該官能基,可舉例例如,羥基、羧基、硫醇基、1或2級胺基等。此等之中,相當於上述(a1-3)成分之具有羥基的聚合性乙烯基單體較佳。 作為具有羥基的聚合性乙烯基單體,可舉例例如2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、3-羥基丙基(甲基)丙烯酸酯、2-羥基丁基(甲基)丙烯酸酯、3-羥基丁基(甲基)丙烯酸酯、4-羥基丁基(甲基)丙烯酸酯等之羥基烷基(甲基)丙烯酸酯;N-羥甲基丙烯醯胺、N-羥甲基甲基丙烯酸基醯胺等之含有羥基的丙烯醯胺類等。又,作為具有羧基的聚合性乙烯基單體,可舉例例如丙烯酸、甲基丙烯酸、巴豆酸、馬來酸、伊康酸、檸康酸等之乙烯性不飽和羧酸等。此等之中,以2-羥基丙烯酸乙酯、4-羥基丁基丙烯酸酯較佳。The polymerizable vinyl monomer may further have a functional group other than the vinyl group in the molecule. Examples of the functional group include a hydroxyl group, a carboxyl group, a thiol group, a primary or secondary amine group, etc. Among these, the polymerizable vinyl monomer having a hydroxyl group corresponding to the above-mentioned component (a1-3) is preferred. Examples of polymerizable vinyl monomers having a hydroxyl group include hydroxyalkyl (meth)acrylates such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; and hydroxyl group-containing acrylamides such as N-hydroxymethylacrylamide and N-hydroxymethylmethacrylamide. Examples of polymerizable vinyl monomers having a carboxyl group include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citric acid. Among these, 2-hydroxyethyl acrylate and 4-hydroxybutyl acrylate are preferred.

又,作為其他聚合性乙烯基單體,可舉例例如乙酸乙烯酯、丙酸乙烯基等之乙烯基酯類;乙烯、丙烯、丁烯等之烯烴類;氯乙烯、氯化亞乙烯等之鹵化烯烴類;苯乙烯、α-甲基苯乙烯等之苯乙烯系單體;丁二烯、異戊二烯、氯丁二烯等之二烯系單體;丙烯腈、甲基丙烯腈等之腈系單體;丙烯醯胺、甲基丙烯酸基醯胺、N-甲基丙烯醯胺、N-甲基甲基丙烯酸基醯胺、N,N-二甲基(甲基)丙烯醯胺、N,N-二乙基(甲基)丙烯醯胺、N-乙烯基吡咯啶酮等之醯胺系單體;(甲基)丙烯酸N,N-二乙胺基乙酯、N-(甲基)丙烯醯基嗎啉等之含有3級胺基之單體等。Examples of other polymerizable vinyl monomers include vinyl esters such as vinyl acetate and vinyl propionate; olefins such as ethylene, propylene, and butylene; halogenated olefins such as vinyl chloride and vinylidene chloride; styrene monomers such as styrene and α-methylstyrene; diene monomers such as butadiene, isoprene, and chloroprene; nitrile monomers such as acrylonitrile and methacrylonitrile; amide monomers such as acrylamide, methacrylamide, N-methylacrylamide, N-methylmethacrylamide, N,N-dimethyl(meth)acrylamide, N,N-diethyl(meth)acrylamide, and N-vinylpyrrolidone; and monomers containing tertiary amine groups such as N,N-diethylaminoethyl(meth)acrylate and N-(meth)acryloylmorpholine.

《多官能(甲基)丙烯酸酯單體》 作為多官能(甲基)丙烯酸酯單體,只要是於一分子中具有2個以上(甲基)丙烯醯基之單體便無特別限定,可適當使用以往公知者。 多官能(甲基)丙烯酸酯單體可單獨使用1種,亦可併用2種以上。《Multifunctional (meth)acrylate monomer》 The multifunctional (meth)acrylate monomer is not particularly limited as long as it has two or more (meth)acrylic groups in one molecule, and conventionally known monomers can be used appropriately. The multifunctional (meth)acrylate monomer can be used alone or in combination of two or more.

作為多官能(甲基)丙烯酸酯單體,可舉例例如1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、新戊二醇己二酸酯二(甲基)丙烯酸酯、羥基三甲基乙酸新戊二醇二(甲基)丙烯酸酯、二環戊基二(甲基)丙烯酸酯、己內酯改質二環戊烯基二(甲基)丙烯酸酯、環氧乙烷改質磷酸二(甲基)丙烯酸酯、二(丙烯醯氧基乙基)異三聚氰酸酯、烯丙基化環己基二(甲基)丙烯酸酯、異三聚氰酸環氧乙烷改質二丙烯酸酯等之2官能(甲基)丙烯酸酯單體;三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇三(甲基)丙烯酸酯、丙酸改質二季戊四醇三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、環氧丙烷改質三羥甲基丙烷三(甲基)丙烯酸酯、參(丙烯醯氧基乙基)異三聚氰酸酯、雙(丙烯醯氧基乙基)羥基乙基異三聚氰酸酯、異三聚氰酸環氧乙烷改質三丙烯酸酯、ε-己內酯改質參(丙烯醯氧基乙基)異三聚氰酸酯、二甘油四(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、丙酸改質二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、己內酯改質二季戊四醇六(甲基)丙烯酸酯等之相當於上述(a1-4)成分的多官能(甲基)丙烯酸酯單體等。Examples of the multifunctional (meth)acrylate monomer include bifunctional (meth)acrylate monomers such as 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, neopentyl glycol adipate di(meth)acrylate, hydroxytrimethylacetic acid neopentyl glycol di(meth)acrylate, dicyclopentyl di(meth)acrylate, caprolactone-modified dicyclopentenyl di(meth)acrylate, ethylene oxide-modified phosphoric acid di(meth)acrylate, di(acryloyloxyethyl) isocyanurate, allyl cyclohexyl di(meth)acrylate, and isocyanurate ethylene oxide-modified diacrylate; trihydroxymethylpropane tri(meth)acrylate, diquaternary Pentaerythritol tri(meth)acrylate, propionic acid-modified dipentaerythritol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, propylene oxide-modified trihydroxymethylpropane tri(meth)acrylate, tris(acryloyloxyethyl)isocyanurate, bis(acryloyloxyethyl)hydroxyethylisocyanurate, isocyanuric acid ethylene oxide-modified triacrylate, ε-caprolactone-modified tris(acryloyloxyethyl)isocyanurate, diglycerol tetra(meth)acrylate, pentaerythritol tetra(meth)acrylate, propionic acid-modified dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, caprolactone-modified dipentaerythritol hexa(meth)acrylate and the like, which are polyfunctional (meth)acrylate monomers corresponding to the above-mentioned component (a1-4).

《(a1)成分之含量》 聚合性組成物(x-1A)中之聚合性乙烯基單體的合計含量,相對於聚合性組成物(x-1A)之有效成分的總量(100質量%)而言,,較佳為10~80質量%,更佳為30~75質量%,進而佳為50~70質量%。 聚合性組成物(x-1A)中之多官能(甲基)丙烯酸酯單體的合計含量,相對於聚合性組成物(x-1A)之有效成分的總量(100質量%)而言,較佳為0.5~15質量%,更佳為1~10質量%,進而佳為2~5質量%。 聚合性組成物(x-1A)中之(a1)成分的合計含量,相對於聚合性組成物(x-1A)之有效成分的總量(100質量%)而言,較佳為15~90質量%,更佳為35~80質量%,進而佳為55~75質量%。《Content of component (a1)》 The total content of polymerizable vinyl monomers in the polymerizable composition (x-1A) is preferably 10-80% by mass, more preferably 30-75% by mass, and even more preferably 50-70% by mass, relative to the total amount (100% by mass) of the effective components of the polymerizable composition (x-1A). The total content of polyfunctional (meth)acrylate monomers in the polymerizable composition (x-1A) is preferably 0.5-15% by mass, more preferably 1-10% by mass, and even more preferably 2-5% by mass, relative to the total amount (100% by mass) of the effective components of the polymerizable composition (x-1A). The total content of the component (a1) in the polymerizable composition (x-1A) is preferably 15 to 90 mass %, more preferably 35 to 80 mass %, and even more preferably 55 to 75 mass %, relative to the total amount (100 mass %) of the effective ingredients in the polymerizable composition (x-1A).

(具有能量線聚合性官能基之預聚物(a2)) 作為具有能量線聚合性官能基之預聚物(a2),可舉例具有1個能量線聚合性官能基之預聚物、具有2個以上能量線聚合性官能基之預聚物等。此等之中,(a2)成分,由自我剝離性優異同時形成剝離後之被黏著體污染少的黏著劑層之觀點來看,含有具有2個以上能量線聚合性官能基之預聚物較佳,含有具有2個能量線聚合性官能基之預聚物更佳,含有具有2個能量線聚合性官能基,且於兩末端具有該能量線聚合性官能基之預聚物進而佳。(Prepolymer (a2) having energy-ray polymerizable functional groups) As the prepolymer (a2) having energy-ray polymerizable functional groups, there can be exemplified prepolymers having one energy-ray polymerizable functional group, prepolymers having two or more energy-ray polymerizable functional groups, etc. Among these, component (a2) preferably contains a prepolymer having two or more energy-ray polymerizable functional groups, more preferably a prepolymer having two energy-ray polymerizable functional groups, and still more preferably a prepolymer having two energy-ray polymerizable functional groups and having the energy-ray polymerizable functional groups at both ends, from the viewpoint of having excellent self-peeling properties and forming an adhesive layer with less contamination of the adherend after peeling.

作為(a2)成分,含有具有2個以上作為能量線聚合性官能基之(甲基)丙烯醯基之預聚物(以下,亦稱為「多官能(甲基)丙烯酸酯預聚物」)較佳。藉由(a2)成分含有上述化合物,可提升聚合此等而得之黏著劑的凝集力,形成自我剝離性優異,同時剝離後之被黏著體污染少的黏著劑層(X1)。As component (a2), a prepolymer containing two or more (meth)acrylic groups as energy-ray polymerizable functional groups (hereinafter, also referred to as "multifunctional (meth)acrylate prepolymer") is preferred. By containing the above-mentioned compound in component (a2), the cohesive force of the adhesive obtained by polymerizing the above-mentioned compound can be enhanced, and an adhesive layer (X1) having excellent self-peeling properties and less contamination of the adherend after peeling can be formed.

《多官能(甲基)丙烯酸酯預聚物》 作為多官能(甲基)丙烯酸酯預聚物,只要是於一分子中具有2個以上(甲基)丙烯醯基的預聚物便無特別限定,可適當使用以往公知者。 多官能(甲基)丙烯酸酯預聚物可單獨使用1種,亦可併用2種以上。《Multifunctional (meth)acrylate prepolymer》 As a multifunctional (meth)acrylate prepolymer, there is no particular limitation as long as it is a prepolymer having two or more (meth)acryl groups in one molecule, and conventionally known ones can be appropriately used. The multifunctional (meth)acrylate prepolymer can be used alone or in combination of two or more.

作為多官能(甲基)丙烯酸酯預聚物,可舉例例如胺基甲酸酯丙烯酸酯系預聚物、聚酯丙烯酸酯系預聚物、環氧丙烯酸酯系預聚物、聚醚丙烯酸酯系預聚物、聚丁二烯丙烯酸酯系預聚物、聚矽氧丙烯酸酯系預聚物、聚丙烯酸基丙烯酸酯系預聚物等。Examples of the polyfunctional (meth)acrylate prepolymer include urethane acrylate prepolymers, polyester acrylate prepolymers, epoxy acrylate prepolymers, polyether acrylate prepolymers, polybutadiene acrylate prepolymers, silicone acrylate prepolymers, and polyacrylic acrylate prepolymers.

胺基甲酸酯丙烯酸酯系預聚物,例如,可藉由將聚胺基甲酸酯預聚物以(甲基)丙烯酸或(甲基)丙烯酸衍生物酯化而得,該聚胺基甲酸酯預聚物係藉由聚伸烷基多元醇、聚醚多元醇、聚酯多元醇、具有羥基末端之氫化異戊二烯、具有羥基末端之氫化丁二烯等之化合物,與聚異氰酸酯之反應而得。Urethane acrylate prepolymers can be obtained, for example, by esterifying a polyurethane prepolymer with (meth)acrylic acid or a (meth)acrylic acid derivative. The polyurethane prepolymer is obtained by reacting a compound such as polyalkylene polyol, polyether polyol, polyester polyol, hydrogenated isoprene with a hydroxyl terminal, hydrogenated butadiene with a hydroxyl terminal, and polyisocyanate.

作為胺基甲酸酯丙烯酸酯系預聚物之製造中使用的聚伸烷基多元醇,例如,聚丙二醇、聚乙二醇、聚丁二醇、聚己二醇等,此等之中,以聚丙二醇較佳。此外,所得之胺基甲酸酯丙烯酸酯系預聚物的官能基數定為3以上時,例如,適當組合甘油、三羥甲基丙烷、三乙醇胺、季戊四醇、乙二胺、二伸乙三胺、山梨糖醇、蔗糖等即可。As the polyalkylene glycol used in the production of the urethane acrylate prepolymer, for example, polypropylene glycol, polyethylene glycol, polybutylene glycol, polyethylene glycol, etc., among which polypropylene glycol is preferred. In addition, when the functional group number of the obtained urethane acrylate prepolymer is set to 3 or more, for example, glycerin, trihydroxymethylpropane, triethanolamine, pentaerythritol, ethylenediamine, diethylenetriamine, sorbitol, sucrose, etc. can be appropriately combined.

作為胺基甲酸酯丙烯酸酯系預聚物之製造中使用的聚異氰酸酯,可舉例例如六亞甲基二異氰酸酯、三亞甲基二異氰酸酯等之脂肪族二異氰酸酯;甲苯二異氰酸酯、伸茬基二異氰酸酯、二苯基二異氰酸酯等之芳香族二異氰酸酯;二環己基甲烷二異氰酸酯、異佛酮二異氰酸酯等之脂環式二異氰酸酯等,此等之中,以脂肪族二異氰酸酯較佳,六亞甲基二異氰酸酯更佳。此外,聚異氰酸酯不限於2官能,亦可使用3官能以上者。Examples of polyisocyanates used in the production of urethane acrylate prepolymers include aliphatic diisocyanates such as hexamethylene diisocyanate and trimethylene diisocyanate; aromatic diisocyanates such as toluene diisocyanate, stilbene diisocyanate, and diphenyl diisocyanate; alicyclic diisocyanates such as dicyclohexylmethane diisocyanate and isophorone diisocyanate, etc. Among these, aliphatic diisocyanates are preferred, and hexamethylene diisocyanate is more preferred. In addition, the polyisocyanate is not limited to difunctional, and trifunctional or higher functional ones can also be used.

作為胺基甲酸酯丙烯酸酯系預聚物之製造中使用的(甲基)丙烯酸衍生物,可舉例例如2-羥基丙烯酸乙酯、4-羥基丁基丙烯酸酯等之羥基烷基(甲基)丙烯酸酯;2-異氰酸酯丙烯酸乙酯、2-異氰酸酯乙基甲基丙烯酸酯、1,1-雙(丙烯醯氧基甲基)乙基異氰酸酯等,此等之中,以2-異氰酸酯丙烯酸乙酯較佳。Examples of (meth)acrylic acid derivatives used in the preparation of urethane acrylate prepolymers include hydroxyalkyl (meth)acrylates such as 2-hydroxyethyl acrylate and 4-hydroxybutyl acrylate; 2-isocyanate ethyl acrylate, 2-isocyanate ethyl methacrylate, 1,1-bis(acryloyloxymethyl)ethyl isocyanate, etc. Among these, 2-isocyanate ethyl acrylate is preferred.

作為胺基甲酸酯丙烯酸酯系預聚物之其他的製造方法,可舉例使聚伸烷基多元醇、聚醚多元醇、聚酯多元醇、具有羥基末端之氫化異戊二烯、具有羥基末端之氫化丁二烯等之化合物所具有的羥基,與異氰酸酯烷基(甲基)丙烯酸酯所具有的-N=C=O部分反應的法。此時,作為該異氰酸酯烷基(甲基)丙烯酸酯,可使用例如上述之2-異氰酸酯丙烯酸乙酯、2-異氰酸酯乙基甲基丙烯酸酯、1,1-雙(丙烯醯氧基甲基)乙基異氰酸酯等。As another method for producing the urethane acrylate prepolymer, there can be cited a method of reacting a hydroxyl group of a compound such as polyalkylene polyol, polyether polyol, polyester polyol, hydrogenated isoprene having a hydroxyl terminal, hydrogenated butadiene having a hydroxyl terminal, with a -N=C=O part of an isocyanate alkyl (meth) acrylate. In this case, as the isocyanate alkyl (meth) acrylate, for example, the above-mentioned 2-isocyanate ethyl acrylate, 2-isocyanate ethyl methacrylate, 1,1-bis (acryloyloxymethyl) ethyl isocyanate, etc. can be used.

聚酯丙烯酸酯系預聚物,例如,可藉由將聚酯預聚物之羥基以(甲基)丙烯酸酯化而得,該聚酯預聚物係藉由多元羧酸與多元醇之縮合而得之於兩末端具有羥基者。又,亦可藉由將於多元羧酸加成環氧烷烴而得之預聚物的末端之羥基以(甲基)丙烯酸酯化而得。The polyester acrylate prepolymer can be obtained, for example, by esterifying the hydroxyl group of a polyester prepolymer having hydroxyl groups at both ends obtained by condensation of a polycarboxylic acid and a polyol with (meth)acrylic acid. Alternatively, the polyester acrylate prepolymer can be obtained by esterifying the terminal hydroxyl group of a prepolymer obtained by adding an alkylene oxide to a polycarboxylic acid with (meth)acrylic acid.

環氧丙烯酸酯系預聚物,例如,可藉由於相對低分子量之雙酚型環氧樹脂、酚醛清漆型環氧樹脂等之環氧乙烷環,使(甲基)丙烯酸反應進行酯化而得。又,可使用將環氧丙烯酸酯系預聚物部分地以二鹼性羧酸酐改質而成之羧基改質型的環氧丙烯酸酯系預聚物。Epoxyacrylate prepolymers can be obtained, for example, by esterifying (meth)acrylic acid with ethylene oxide rings of relatively low molecular weight bisphenol epoxy resins, novolac epoxy resins, etc. Alternatively, carboxyl-modified epoxyacrylate prepolymers obtained by partially modifying epoxyacrylate prepolymers with dibasic carboxylic anhydride can be used.

聚醚丙烯酸酯系預聚物,例如,可藉由將聚醚多元醇之羥基以(甲基)丙烯酸酯化而得。The polyether acrylate prepolymer can be obtained, for example, by esterifying the hydroxyl group of polyether polyol with (meth)acrylic acid.

聚丙烯酸基丙烯酸酯系預聚物,可於側鏈具有丙烯醯基,亦可於兩末端或單末端具有丙烯醯基。於側鏈具有丙烯醯基之聚丙烯酸基丙烯酸酯系預聚物,例如,可藉由使環氧丙基甲基丙烯酸酯加成至聚丙烯酸之羧基而得。又,於兩末端具有丙烯醯基之聚丙烯酸基丙烯酸酯系預聚物,例如,可藉由利用以ATRP (Atom Transfer Radical Polymerization)法合成而成之聚丙烯酸酯預聚物的聚合成長末端結構於兩末端導入丙烯醯基而得。The polyacrylic acid ester prepolymer may have an acryl group in the side chain, or may have an acryl group at both ends or at one end. The polyacrylic acid ester prepolymer having an acryl group in the side chain may be obtained, for example, by adding epoxypropyl methacrylate to the carboxyl group of polyacrylic acid. Furthermore, the polyacrylic acid ester prepolymer having an acryl group at both ends may be obtained, for example, by introducing an acryl group at both ends by utilizing the polymerization growth terminal structure of a polyacrylate prepolymer synthesized by the ATRP (Atom Transfer Radical Polymerization) method.

(a2)成分之質量平均分子量(Mw),較佳為10,000~350,000,更佳為15,000~200,000,進而佳為20,000 ~50,000。The mass average molecular weight (Mw) of the component (a2) is preferably 10,000 to 350,000, more preferably 15,000 to 200,000, and even more preferably 20,000 to 50,000.

《(a2)成分之含量》 聚合性組成物(x-1A)中之多官能(甲基)丙烯酸酯預聚物之合計含量,相對於聚合性組成物(x-1A)之有效成分的總量(100質量%)而言,較佳為10~60質量%,更佳為15~55質量%,進而佳為20~30質量%。 聚合性組成物(x-1A)中之(a2)成分之合計含量,相對於聚合性組成物(x-1A)之有效成分的總量(100質量%)而言,較佳為10~60質量%,更佳為15~55質量%,進而佳為20~30質量%。《Content of component (a2)》 The total content of the multifunctional (meth)acrylate prepolymer in the polymerizable composition (x-1A) is preferably 10-60% by mass, more preferably 15-55% by mass, and even more preferably 20-30% by mass, relative to the total amount (100% by mass) of the effective components of the polymerizable composition (x-1A). The total content of the component (a2) in the polymerizable composition (x-1A) is preferably 10-60% by mass, more preferably 15-55% by mass, and even more preferably 20-30% by mass, relative to the total amount (100% by mass) of the effective components of the polymerizable composition (x-1A).

聚合性組成物(x-1A)中之(a2)成分及(a1)成分之含量比[(a2)/(a1)],以質量基準計,較佳為10/90~ 70/30,更佳為20/80~50/50,進而佳為25/75~40/60。The content ratio of the component (a2) to the component (a1) in the polymerizable composition (x-1A) [(a2)/(a1)] is preferably 10/90 to 70/30, more preferably 20/80 to 50/50, and even more preferably 25/75 to 40/60, based on mass.

上述能量線聚合性成分之中,聚合性組成物(x-1A),含有聚合性乙烯基單體、多官能(甲基)丙烯酸酯單體及多官能(甲基)丙烯酸酯預聚物較佳。 聚合性組成物(x-1A)所含有的能量線聚合性成分中之聚合性乙烯基單體、多官能(甲基)丙烯酸酯單體及多官能(甲基)丙烯酸酯預聚物之合計含量,相對於能量線聚合性成分之總量(100質量%)而言,較佳為80質量%以上,更佳為90質量%以上,進而佳為95質量%以上,再更佳為99質量%以上,亦可為100質量%。Among the above-mentioned energy ray polymerizable components, the polymerizable composition (x-1A) preferably contains a polymerizable vinyl monomer, a multifunctional (meth)acrylate monomer, and a multifunctional (meth)acrylate prepolymer. The total content of the polymerizable vinyl monomer, the multifunctional (meth)acrylate monomer, and the multifunctional (meth)acrylate prepolymer in the energy ray polymerizable components contained in the polymerizable composition (x-1A) is preferably 80% by mass or more, more preferably 90% by mass or more, further preferably 95% by mass or more, further preferably 99% by mass or more, and may also be 100% by mass, relative to the total amount of the energy ray polymerizable components (100% by mass).

能量線聚合性成分之合計含量,相對於黏著劑組成物(x-1A)之有效成分的總量(100質量%)或相對於黏著劑層(X1)之總質量(100質量%)而言,較佳為70~98質量%,更佳為75~97質量%,進而佳為80~96質量%,再更佳為82~95質量%。 上述能量線聚合性成分之合計含量,可另解讀為使黏著劑層(X1)所含有之能量線聚合性成分進行能量線聚合而成之聚合物的含量。The total content of the energy ray polymerizable components is preferably 70-98% by mass, more preferably 75-97% by mass, and further preferably 80-96% by mass, and further preferably 82-95% by mass, relative to the total amount of the active ingredients of the adhesive composition (x-1A) (100% by mass) or relative to the total amount of the adhesive layer (X1) (100% by mass). The total content of the energy ray polymerizable components can be interpreted as the content of the polymer formed by energy ray polymerization of the energy ray polymerizable components contained in the adhesive layer (X1).

(熱膨脹性粒子) 關於聚合性組成物(x-1A)所含有的熱膨脹性粒子之適合的態樣,與作為上述黏著劑層(X1)所含有之成分說明的熱膨脹性粒子之適合的態樣相同。熱膨脹性粒子相對於上述黏著劑層(X1)之總質量(100質量%)的含量,可另解讀為熱膨脹性粒子相對於聚合性組成物(x-1A)有效成分之總量(100質量%)的含量。(Thermal expansion particles) The suitable form of the thermal expansion particles contained in the polymerizable composition (x-1A) is the same as the suitable form of the thermal expansion particles described as the component contained in the above-mentioned adhesive layer (X1). The content of the thermal expansion particles relative to the total mass (100 mass%) of the above-mentioned adhesive layer (X1) can be interpreted as the content of the thermal expansion particles relative to the total mass (100 mass%) of the effective components of the polymerizable composition (x-1A).

(光聚合起始劑) 聚合性組成物(x-1A),由更有效率地進行能量線聚合性成分的聚合之觀點來看,含有光聚合起始劑較佳。 作為光聚合起始劑,可舉例例如安息香、安息香甲基醚、安息香乙基醚、安息香異丙基醚、安息香-n-丁基醚、安息香異丁基醚、苯乙酮、二甲胺基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基-2-苯基苯乙酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-羥基環己基苯基酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-丙烷-1-酮、4-(2-羥基乙氧基)苯基-2-(羥基-2-丙基)酮、二苯甲酮、p-苯基二苯甲酮、4,4’-二乙胺基二苯甲酮、二氯二苯甲酮、2-甲基蒽醌、2-乙基蒽醌、2-三級丁基蒽醌、2-胺基蒽醌、2-甲基噻吨酮、2-乙基噻吨酮、2-氯噻吨酮、2,4-二甲基噻吨酮、2,4-二乙基噻吨酮、苄基二甲基縮酮、苯乙酮二甲基縮酮、p-二甲胺基苯甲酸酯、寡[2-羥基-2-甲基-1[4-(1-甲基乙烯基)苯基]丙酮]、2,4,6-三甲基苯甲醯基-二苯基-膦氧化物等。光聚合起始劑可單獨使用1種,亦可併用2種以上。(Photopolymerization initiator) The polymerizable composition (x-1A) preferably contains a photopolymerization initiator from the viewpoint of more efficiently polymerizing the energy ray polymerizable component. Examples of the photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin-n-butyl ether, benzoin isobutyl ether, acetophenone, dimethylaminoacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, 1-hydroxycyclohexylphenyl ketone, 2-methyl-1-[4-(methylthio)phenyl]-2-oxolinyl-propane-1-one, 4-(2-hydroxyethoxy)phenyl-2-(hydroxy-2-propyl)ketone. , benzophenone, p-phenylbenzophenone, 4,4'-diethylaminobenzophenone, dichlorobenzophenone, 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 2-aminoanthraquinone, 2-methylthioxanthone, 2-ethylthioxanthone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, benzyl dimethyl ketal, acetophenone dimethyl ketal, p-dimethylaminobenzoate, oligo[2-hydroxy-2-methyl-1[4-(1-methylvinyl)phenyl]propanone], 2,4,6-trimethylbenzyl-diphenyl-phosphine oxide, etc. The photopolymerization initiator may be used alone or in combination of two or more.

聚合性組成物(x-1A)含有光聚合起始劑時,其含量,相對於能量線聚合性成分100質量份而言,較佳為0.1~10質量份,更佳為0.2~5質量份,進而佳為0.3~1質量份。 光聚合起始劑之含量若為0.1質量份以上,可使能量線聚合性成分之聚合更有效率地進行。另一方面,該含量若為10質量份以下,可消除或減少未反應而直接殘留的光聚合起始劑,變得容易調整所得之黏著劑層(X1)成為希望的物性。When the polymerizable composition (x-1A) contains a photopolymerization initiator, its content is preferably 0.1 to 10 parts by mass, more preferably 0.2 to 5 parts by mass, and further preferably 0.3 to 1 part by mass relative to 100 parts by mass of the energy ray polymerizable component. If the content of the photopolymerization initiator is 0.1 parts by mass or more, the polymerization of the energy ray polymerizable component can be carried out more efficiently. On the other hand, if the content is 10 parts by mass or less, the photopolymerization initiator that remains unreacted can be eliminated or reduced, making it easier to adjust the obtained adhesive layer (X1) to the desired properties.

(溶劑) 此外,聚合性組成物(x-1A),在不違反本發明之目的的範圍內,雖亦可含有稀釋劑等之溶劑,但不含溶劑較佳。即,聚合性組成物(x-1A)為無溶劑型聚合性組成物較佳。 藉由聚合性組成物(x-1A)為無溶劑型聚合性組成物,形成黏著劑層(X1)時,由於可省略溶劑之加熱乾燥,故可抑制加熱乾燥時中之熱膨脹性粒子的膨脹。又,使用溶劑時,有隨者乾燥時的體積減少而熱膨脹性粒子偏向存在一邊的面側,與基材(Y)之密著性或黏著表面之黏著力變低之情形。另一方面,無溶劑型聚合性組成物,由於在能量線聚合性成分中熱膨脹性粒子均勻地分散之狀態下直接進行聚合形成黏著劑層(X1),故難以發生如上述之問題。 聚合性組成物(x-1A)含有溶劑時,其含量越少越好,相對於聚合性組成物(x-1A)之有效成分的總量(100質量%)而言,較佳為10質量%以下,更佳為1質量%以下,進而佳為0.1質量%以下,再更佳為0.01質量%以下。(Solvent) In addition, the polymerizable composition (x-1A) may contain a solvent such as a diluent within the scope that does not violate the purpose of the present invention, but it is better to contain no solvent. That is, the polymerizable composition (x-1A) is preferably a solvent-free polymerizable composition. When the polymerizable composition (x-1A) is a solvent-free polymerizable composition, when the adhesive layer (X1) is formed, the heat drying of the solvent can be omitted, so the expansion of the heat-expandable particles during the heat drying can be suppressed. In addition, when a solvent is used, as the volume decreases during drying, the heat-expandable particles tend to exist on one side, and the adhesion to the substrate (Y) or the adhesion of the adhesive surface becomes lower. On the other hand, the solvent-free polymerizable composition is unlikely to cause the above-mentioned problem because the thermally expandable particles are directly polymerized to form the adhesive layer (X1) in a state where they are uniformly dispersed in the energy-ray polymerizable component. When the polymerizable composition (x-1A) contains a solvent, the content thereof is preferably as small as possible, and is preferably 10% by mass or less, more preferably 1% by mass or less, further preferably 0.1% by mass or less, and further preferably 0.01% by mass or less relative to the total amount (100% by mass) of the effective components of the polymerizable composition (x-1A).

聚合性組成物(x-1A),亦可含有上述各成分以外之其他成分。作為其他成分,可舉例後述之增黏劑、黏著劑用添加劑等。The polymerizable composition (x-1A) may contain other components in addition to the above components. Examples of other components include thickeners and adhesive additives described below.

(聚合性組成物(x-1A)之製造方法) 聚合性組成物(x-1A),可藉由混合能量線聚合性成分、熱膨脹性粒子及視需要含有之其他成分來製造。所得之聚合性組成物(x-1A),由於是藉由其後之能量線聚合將能量線聚合性成分高分子量化而成者,故形成層時,比低分子量之能量線聚合性成分更能調整成適度的黏度。因此聚合性組成物(x-1A),可不添加稀釋劑等之溶劑,直接作為塗佈溶液使用於黏著劑層(X1)的形成。 此外,對聚合性組成物(x-1A)照射能量線形成之黏著劑層(X1)中,雖含有能量線聚合性成分聚合而成的多種多樣的聚合物,與該聚合物中分散之熱膨脹性粒子,但直接以結構及物性來界定此等為不可能,或存在不切實際的情形。(Manufacturing method of polymerizable composition (x-1A)) The polymerizable composition (x-1A) can be manufactured by mixing energy ray polymerizable components, thermally expandable particles, and other components as required. The obtained polymerizable composition (x-1A) is obtained by converting the energy ray polymerizable components into high molecular weight by subsequent energy ray polymerization. Therefore, when forming a layer, it can be adjusted to an appropriate viscosity compared with low molecular weight energy ray polymerizable components. Therefore, the polymerizable composition (x-1A) can be used directly as a coating solution for forming an adhesive layer (X1) without adding a solvent such as a diluent. Furthermore, although the adhesive layer (X1) formed by irradiating the polymerizable composition (x-1A) with energy rays contains a variety of polymers polymerized by energy ray polymerizable components and thermally expandable particles dispersed in the polymers, it is impossible or impractical to define these directly by structure and physical properties.

-使用黏著劑組成物(x-1B)的方法- 使用黏著劑組成物(x-1B)的方法,係塗佈含有黏著性樹脂及熱膨脹性粒子之黏著劑組成物(x-1B)形成黏著劑層(X1)的方法。若藉由該方法,黏著劑層(X1)中含有的黏著性樹脂,成為黏著劑組成物(x-1B)中含有的黏著性樹脂本身。-Method of using adhesive composition (x-1B)- The method of using adhesive composition (x-1B) is a method of forming an adhesive layer (X1) by applying an adhesive composition (x-1B) containing an adhesive resin and thermally expandable particles. If this method is used, the adhesive resin contained in the adhesive layer (X1) becomes the adhesive resin itself contained in the adhesive composition (x-1B).

黏著劑組成物(x-1B),係含有黏著性樹脂及熱膨脹性粒子者。 以下,說明關於黏著劑組成物(x-1B)中含有的各成分。The adhesive composition (x-1B) contains an adhesive resin and thermally expandable particles. The following describes the components contained in the adhesive composition (x-1B).

關於黏著劑組成物(x-1B)所含有的熱膨脹性粒子之合適的態樣,與作為上述黏著劑層(X1)中含有的成分所說明之熱膨脹性粒子之合適的態樣相同。熱膨脹性粒子相對於上述黏著劑層(X1)之總質量(100質量%)的含量,可另解讀為熱膨脹性粒子相對於黏著劑組成物(x-1B)之有效成分之總量(100質量%)的含量。The suitable embodiment of the heat-expandable particles contained in the adhesive composition (x-1B) is the same as the suitable embodiment of the heat-expandable particles described as the component contained in the above-mentioned adhesive layer (X1). The content of the heat-expandable particles relative to the total mass (100 mass%) of the above-mentioned adhesive layer (X1) can be interpreted as the content of the heat-expandable particles relative to the total mass (100 mass%) of the effective components of the adhesive composition (x-1B).

作為黏著劑組成物(x-1B)所含有的黏著性樹脂,只要是該樹脂單獨具有黏著性,質量平均分子量(Mw)為1萬以上之聚合物即可。 作為黏著性樹脂之質量平均分子量(Mw),由提升黏著力之觀點來看,較佳為1萬~200萬,更佳為2萬~150萬,進而佳為3萬~100萬。 作為具體之黏著性樹脂,可舉例例如丙烯酸系樹脂、胺基甲酸酯系樹脂、聚異丁烯系樹脂等之橡膠系樹脂、聚酯系樹脂、烯烴系樹脂、聚矽氧系樹脂、聚乙烯基醚系樹脂等。此等之中,由表現優異之黏著力的觀點,及,藉由加熱處理所致之熱膨脹性粒子的膨脹於所形成之黏著劑層的表面容易形成凹凸的觀點來看,黏著性樹脂含有丙烯酸系樹脂較佳。 此等之黏著性樹脂可單獨使用1種,亦可併用2種以上。 又,此等之黏著性樹脂為具有2種以上之結構單元的共聚物時,該共聚物之形態並無特別限定,可為嵌段共聚物、無規共聚物及接枝共聚物之任一者。As the adhesive resin contained in the adhesive composition (x-1B), any polymer having a mass average molecular weight (Mw) of 10,000 or more is sufficient as long as the resin alone has adhesiveness. From the viewpoint of improving the adhesive force, the mass average molecular weight (Mw) of the adhesive resin is preferably 10,000 to 2,000,000, more preferably 20,000 to 1,500,000, and further preferably 30,000 to 1,000,000. As specific adhesive resins, for example, rubber resins such as acrylic resins, urethane resins, polyisobutylene resins, polyester resins, olefin resins, silicone resins, polyvinyl ether resins, etc. can be cited. Among these, the adhesive resin preferably contains an acrylic resin from the viewpoint of exhibiting excellent adhesive force and from the viewpoint that the expansion of the heat-expandable particles caused by the heat treatment easily forms unevenness on the surface of the formed adhesive layer. These adhesive resins can be used alone or in combination of two or more. In addition, when these adhesive resins are copolymers having two or more structural units, the morphology of the copolymer is not particularly limited, and it can be any of a block copolymer, a random copolymer, and a graft copolymer.

黏著性樹脂之含量,相對於黏著劑組成物(x-1B)之有效成分之總量(100質量%)或黏著劑層(X1)之總質量(100質量%)而言,較佳為30~99.99質量%,更佳為40~ 99.95質量%,進而佳為50~99.90質量%,再更佳為55~ 99.80質量%,更更佳為60~99.50質量%。The content of the adhesive resin is preferably 30 to 99.99 mass %, more preferably 40 to 99.95 mass %, further preferably 50 to 99.90 mass %, further preferably 55 to 99.80 mass %, and even more preferably 60 to 99.50 mass %, relative to the total mass (100 mass %) of the active ingredients of the adhesive composition (X-1B) or the total mass (100 mass %) of the adhesive layer (X1).

黏著劑組成物(x-1B),亦可含有上述各成分以外之其他成分。作為其他成分,可舉例溶劑、後述之增黏劑、黏著劑用添加劑等。The adhesive composition (x-1B) may contain other components in addition to the above components. Examples of other components include solvents, thickeners described below, and adhesive additives.

黏著劑組成物(x-1B),可藉由混合黏著性樹脂、視需要使用之其他成分等來製造。The adhesive composition (x-1B) can be produced by mixing an adhesive resin and other components as needed.

[其他成分] 黏著劑層(X1),亦可含有黏著性樹脂及熱膨脹性粒子以外之其他成分。 作為上述其他成分,可舉例增黏劑、上述各成分以外之一般黏著劑中使用的黏著劑用添加劑等。[Other components] The adhesive layer (X1) may contain other components other than the adhesive resin and the thermally expandable particles. As the above-mentioned other components, there can be cited thickeners, adhesive additives used in general adhesives other than the above-mentioned components, etc.

(增黏劑) 增黏劑,係以更提升黏著力為目的,視需要使用的成分。 本說明書中,所謂「增黏劑」,係指質量平均分子量(Mw)未達1萬者,與黏著性樹脂有所區別者。 增黏劑之質量平均分子量(Mw)未達1萬,較佳為400~ 9,000,更佳為500~8,000,進而佳為800~5,000。(Thickener) Thickener is a component used as needed to further enhance adhesion. In this manual, the so-called "thickener" refers to a substance with a mass average molecular weight (Mw) of less than 10,000, which is different from the adhesive resin. The mass average molecular weight (Mw) of the thickener is less than 10,000, preferably 400 to 9,000, more preferably 500 to 8,000, and even more preferably 800 to 5,000.

作為增黏劑,可舉例例如松香系樹脂、萜烯系樹脂、苯乙烯系樹脂、將於石油腦之熱分解生成的戊烯、異戊二烯、胡椒鹼、1,3-戊二烯等之C5餾分共聚合而得之C5系石油樹脂、將於石油腦之熱分解生成之茚、乙烯基甲苯等之C9餾分共聚合而得之C9系石油樹脂,及將此等氫化而成之氫化樹脂等。Examples of the tackifier include rosin-based resins, terpene-based resins, styrene-based resins, C5-based petroleum resins obtained by copolymerizing C5 distillates such as pentene, isoprene, piperine, and 1,3-pentadiene generated by thermal decomposition of petroleum naphtha, C9-based petroleum resins obtained by copolymerizing C9 distillates such as indene and vinyl toluene generated by thermal decomposition of petroleum naphtha, and hydrogenated resins obtained by hydrogenating these resins.

增黏劑之軟化點,較佳為60~170℃,更佳為65~160℃,進而佳為70~150℃。 此外,本說明書中,所謂增黏劑之「軟化點」,係指依據JIS K 2531所測定之值的意思。 增黏劑,可單獨使用1種,亦可併用軟化點、結構等相異的2種以上。使用2種以上之增黏劑時,該等複數之增黏劑的軟化點之加重平均,屬於上述範圍較佳。The softening point of the thickener is preferably 60-170°C, more preferably 65-160°C, and further preferably 70-150°C. In addition, in this specification, the "softening point" of the thickener means the value measured in accordance with JIS K 2531. A single thickener may be used, or two or more thickeners with different softening points, structures, etc. may be used in combination. When two or more thickeners are used, it is preferred that the weighted average softening point of the multiple thickeners is within the above range.

黏著劑層(X1)含有增黏劑時,其含量,相對於黏著劑層(X1)之總質量(100質量%)而言,較佳為0.01~ 65質量%,更佳為0.1~50質量%,進而佳為1~40質量%,再更佳為2~30質量%。When the adhesive layer (X1) contains a tackifier, its content is preferably 0.01 to 65 mass %, more preferably 0.1 to 50 mass %, further preferably 1 to 40 mass %, and even more preferably 2 to 30 mass %, relative to the total mass (100 mass %) of the adhesive layer (X1).

(黏著劑用添加劑) 作為黏著劑用添加劑,可舉例例如矽烷耦合劑、抗氧化劑、軟化劑(塑化劑)、防鏽劑、顏料、染料、延遲劑、反應促進劑(觸媒)、紫外線吸收劑等。此等之黏著劑用添加劑,可分別單獨使用,亦可併用2種以上。(Additives for adhesives) As additives for adhesives, there are silane coupling agents, antioxidants, softeners (plasticizers), rust inhibitors, pigments, dyes, delay agents, reaction accelerators (catalysts), ultraviolet absorbers, etc. These additives for adhesives can be used individually or in combination of two or more.

黏著劑層(X1)含有黏著劑用添加劑時,各別之黏著劑用添加劑的含量,相對於黏著劑層(X1)之總質量(100質量%)而言,較佳為0.0001~20質量份,更佳為0.001 ~10質量份。When the adhesive layer (X1) contains an adhesive additive, the content of each adhesive additive is preferably 0.0001 to 20 parts by mass, more preferably 0.001 to 10 parts by mass, relative to the total mass (100% by mass) of the adhesive layer (X1).

[黏著劑層(X1)之物性等] (黏著劑層(X1)之熱膨脹前之23℃下之黏著力) 黏著劑層(X1)之熱膨脹前之23℃下之黏著力,較佳為0.1~12.0N/25mm,更佳為0.5~9.0N/25mm,進而佳為1.0~ 8.0N/25mm,再更佳為1.2~7.5N/25mm。 黏著劑層(X1)之熱膨脹前之23℃下之黏著力若為0.1N/25mm以上,則可更有效地抑制暫時固定時之自被黏著體之不期望的剝離、被黏著體之位置偏移等。另一方面,該黏著力若為12.0N/25mm以下,則可更提升加熱剝離時之剝離性。 此外,本說明書中,黏著劑層的黏著力,係指對於矽鏡晶圓之鏡面的黏著力的意思。 又,本說明書中,黏著劑層(X1)之熱膨脹前之23℃下之黏著力,具體而言係指藉由實施例中記載之方法所測定之值的意思。[Physical properties of adhesive layer (X1)] (Adhesion at 23°C before thermal expansion of adhesive layer (X1)) The adhesion at 23°C before thermal expansion of adhesive layer (X1) is preferably 0.1~12.0N/25mm, more preferably 0.5~9.0N/25mm, further preferably 1.0~8.0N/25mm, and further preferably 1.2~7.5N/25mm. If the adhesion at 23°C before thermal expansion of adhesive layer (X1) is 0.1N/25mm or more, it is more effective to suppress undesired peeling from the adherend during temporary fixing and positional displacement of the adherend. On the other hand, if the adhesive force is 12.0N/25mm or less, the peeling property during heat peeling can be further improved. In addition, in this specification, the adhesive force of the adhesive layer means the adhesive force to the mirror surface of the silicon mirror wafer. In addition, in this specification, the adhesive force of the adhesive layer (X1) at 23°C before thermal expansion specifically means the value measured by the method described in the embodiment.

(黏著劑層(X1)之熱膨脹後之23℃下之黏著力) 黏著劑層(X1)之熱膨脹後之23℃下之黏著力,較佳為1.5N/25mm以下,更佳為0.05N/25mm以下,進而佳為0.01N/25mm以下,再更佳為0N/25mm。此外,所謂黏著力為0N/25mm,係指後述之熱膨脹後之23℃下之黏著力的測定方法中,測定界限以下之黏著力的意思,亦包含為了測定而固定黏著片時黏著力過小而發生不期望的剝離之情形。 本說明書中,黏著劑層(X1)之熱膨脹後之23℃下之黏著力,具體而言係指藉由實施例中記載之方法所測定之值的意思。(Adhesion at 23°C after thermal expansion of adhesive layer (X1)) The adhesion at 23°C after thermal expansion of the adhesive layer (X1) is preferably 1.5N/25mm or less, more preferably 0.05N/25mm or less, further preferably 0.01N/25mm or less, and further preferably 0N/25mm. In addition, the so-called adhesion of 0N/25mm means the adhesion below the measurement limit in the method for measuring adhesion at 23°C after thermal expansion described later, and also includes the situation where the adhesion is too small when the adhesive sheet is fixed for measurement and undesired peeling occurs. In this specification, the adhesive force at 23° C. after thermal expansion of the adhesive layer (X1) specifically means a value measured by the method described in the examples.

(黏著劑層(X1)之23℃下之剪切儲存模數G’(23)) 黏著劑層(X1)之23℃下之剪切儲存模數G’(23),較佳為1.0×104 ~5.0×107 Pa,更佳為5.0×104 ~1.0×107 Pa,進而佳為1.0×105 ~5.0×106 Pa。 黏著劑層(X1)之剪切儲存模數G’(23)若為1.0×104 Pa以上,可抑制暫時固定時之被黏著體的位置偏移、被黏著體之向黏著劑層(X1)之過度沉入等。另一方面,該剪切儲存模數G’(23)若為5.0×107 Pa以下,有藉由熱膨脹性粒子之膨脹,於黏著劑層(X1)之表面容易形成凹凸,提升加熱剝離時之剝離性的傾向。 此外,本說明書中,黏著劑層(X1)之23℃下之剪切儲存模數G’(23),係指藉由實施例中記載之方法所測定之值。(Shear storage modulus G'(23) of the adhesive layer (X1) at 23°C) The shear storage modulus G'(23) of the adhesive layer (X1) at 23°C is preferably 1.0×10 4 to 5.0×10 7 Pa, more preferably 5.0×10 4 to 1.0×10 7 Pa, and further preferably 1.0×10 5 to 5.0×10 6 Pa. If the shear storage modulus G'(23) of the adhesive layer (X1) is 1.0×10 4 Pa or more, positional deviation of the adherend during temporary fixing and excessive sinking of the adherend into the adhesive layer (X1) can be suppressed. On the other hand, if the shear storage modulus G'(23) is 5.0×10 7 Pa or less, the expansion of the thermally expandable particles will easily form irregularities on the surface of the adhesive layer (X1), thereby tending to improve the peeling property during heat peeling. In addition, in this specification, the shear storage modulus G'(23) of the adhesive layer (X1) at 23°C refers to a value measured by the method described in the examples.

黏著劑層(X1)為含有熱膨脹性粒子之層,黏著劑層(X1)之剪切儲存模數G’可受到熱膨脹性粒子之影響。由測定排除熱膨脹性粒子之影響的剪切儲存模數G’之觀點來看,亦可不含熱膨脹性粒子之外,調製與黏著劑層(X1)具有相同構成之黏著劑層(以下,亦稱為「非膨脹性黏著劑層(X1’)」),測定該黏著劑層之剪切儲存模數G’。The adhesive layer (X1) is a layer containing thermally expandable particles, and the shear storage modulus G' of the adhesive layer (X1) may be affected by the thermally expandable particles. From the perspective of measuring the shear storage modulus G' excluding the influence of the thermally expandable particles, an adhesive layer having the same composition as the adhesive layer (X1) (hereinafter, also referred to as "non-expandable adhesive layer (X1')") may be prepared without containing thermally expandable particles, and the shear storage modulus G' of the adhesive layer may be measured.

(非膨脹性黏著劑層(X1’)之23℃下之剪切儲存模數G’(23)) 非膨脹性黏著劑層(X1’)之23℃下之剪切儲存模數G’(23),較佳為1.0×104 ~5.0×107 Pa,更佳為5.0×104 ~1.0×107 Pa,進而佳為1.0×105 ~5.0×106 Pa。 非膨脹性黏著劑層(X1’)之剪切儲存模數G’(23)若為1.0×104 Pa以上,可抑制暫時固定時之被黏著體的位置偏移、被黏著體之向黏著劑層(X1)的過度沉入等。另一方面,該剪切儲存模數G’(23)若為5.0×107 Pa以下,有藉由熱膨脹性粒子之膨脹,於黏著劑層(X1)之表面變得容易形成凹凸,提升加熱剝離時之剝離性的傾向。(Shear storage modulus G'(23) of the non-swelling adhesive layer (X1') at 23°C) The shear storage modulus G'(23) of the non-swelling adhesive layer (X1') at 23°C is preferably 1.0×10 4 to 5.0×10 7 Pa, more preferably 5.0×10 4 to 1.0×10 7 Pa, and further preferably 1.0×10 5 to 5.0×10 6 Pa. When the shear storage modulus G'(23) of the non-swelling adhesive layer (X1') is 1.0×10 4 Pa or more, positional deviation of the adherend during temporary fixing and excessive sinking of the adherend into the adhesive layer (X1) can be suppressed. On the other hand, if the shear storage modulus G'(23) is 5.0×10 7 Pa or less, the surface of the adhesive layer (X1) tends to be more rugged due to the expansion of the thermally expandable particles, thereby improving the peeling property during heat peeling.

(非膨脹性黏著劑層(X1’)之膨脹開始溫度(t)之剪切儲存模數G’(t)) 非膨脹性黏著劑層(X1’)之前述熱膨脹性粒子之膨脹開始溫度(t)之剪切儲存模數G’(t),較佳為5.0×103 ~1.0×107 Pa,更佳為1.0×104 ~5.0×106 Pa,進而佳為5.0×104 ~1.0×106 Pa。 非膨脹性黏著劑層(X1’)之剪切儲存模數G’(t)若為5.0×103 Pa以上,有可抑制暫時固定時之被黏著體的位置偏移、被黏著體之向黏著劑層(X1)的過度沉入等,同時有抑制加熱剝離時黏著片捲曲,可提升操作性之傾向。另一方面,該剪切儲存模數G’(t)若為1.0×107 Pa以下,有藉由熱膨脹性粒子之膨脹,於黏著劑層(X1)之表面變得容易形成凹凸,提升加熱剝離時之剝離性的傾向。 此外,本說明書中,非膨脹性黏著劑層(X1’)之指定溫度之剪切儲存模數G’,係指藉由實施例中記載之方法所測定之值。(Shear storage modulus G'(t) at the expansion starting temperature (t) of the non-expandable adhesive layer (X1')) The shear storage modulus G'(t) at the expansion starting temperature (t) of the aforementioned thermally expandable particles in the non-expandable adhesive layer (X1') is preferably 5.0×10 3 ~1.0×10 7 Pa, more preferably 1.0×10 4 ~5.0×10 6 Pa, further preferably 5.0×10 4 ~1.0×10 6 Pa. When the shear storage modulus G'(t) of the non-expandable adhesive layer (X1') is 5.0×10 3 Pa or more, the positional deviation of the adherend during temporary fixing and the excessive sinking of the adherend into the adhesive layer (X1) can be suppressed, and at the same time, the curling of the adhesive sheet during heat peeling can be suppressed, and the workability tends to be improved. On the other hand, when the shear storage modulus G'(t) is 1.0×10 7 Pa or less, it tends to be easy to form asperities on the surface of the adhesive layer (X1) due to the expansion of the thermally expandable particles, and the peeling property during heat peeling tends to be improved. In addition, in this specification, the shear storage modulus G' of the non-expandable adhesive layer (X1') at a specified temperature refers to a value measured by the method described in the embodiment.

(黏著劑層(X1)之23℃下之厚度) 黏著劑層(X1)之23℃下之厚度,較佳為5~150μm,更佳為10~100μm,進而佳為20~80μm。 黏著劑層(X1)之23℃下之厚度若為5μm以上,有變得容易得到充分的黏著力,抑制暫時固定時之自被黏著體不期望的剝離、被黏著體的位置偏移等的傾向。另一方面,黏著劑層(X1)之23℃下之厚度若為150μm以下,有提升加熱剝離時之剝離性,同時抑制加熱剝離時黏著片捲曲,提升操作性的傾向。 此外,本說明書中,黏著劑層之厚度,係指藉由實施例中記載之方法所測定之值。又,黏著劑層(X1)之厚度,係熱膨脹性粒子之膨脹前之值。(Thickness of adhesive layer (X1) at 23°C) The thickness of the adhesive layer (X1) at 23°C is preferably 5 to 150 μm, more preferably 10 to 100 μm, and further preferably 20 to 80 μm. If the thickness of the adhesive layer (X1) at 23°C is 5 μm or more, it is easy to obtain sufficient adhesive force, and it tends to suppress undesired peeling from the adherend during temporary fixing and positional displacement of the adherend. On the other hand, if the thickness of the adhesive layer (X1) at 23°C is 150 μm or less, it tends to improve the peeling property during heat peeling, suppress the curling of the adhesive sheet during heat peeling, and improve the operability. In this specification, the thickness of the adhesive layer refers to the value measured by the method described in the embodiment. Also, the thickness of the adhesive layer (X1) refers to the value before the thermally expandable particles expand.

<黏著劑層(X2)> 黏著劑層(X2),為藉由照射能量線進行硬化而黏著力降低之黏著劑層。 本發明之一態樣中使用之黏著片,將貼附加工對象物之黏著劑層,藉由做成藉由照射能量線進行硬化而黏著力降低之黏著劑層(X2),自黏著片剝離加工對象物時,沒有加工對象物之表面被熱膨脹性粒子及經膨脹之黏著劑層污染之情形。又,藉由於黏著劑層(X1)與黏著劑層(X2),將使黏著劑層之黏著力降低的作用機構做成不同者,亦可抑制於進行使任一方之黏著劑層之黏著力降低的處理時,不期望地使另一方之黏著劑層之黏著力降低。<Adhesive layer (X2)> The adhesive layer (X2) is an adhesive layer whose adhesive force is reduced by curing by irradiation with energy rays. The adhesive sheet used in one embodiment of the present invention is an adhesive layer to be attached to an object to be processed. By making the adhesive layer (X2) whose adhesive force is reduced by curing by irradiation with energy rays, when the object to be processed is peeled off from the adhesive sheet, the surface of the object to be processed is not contaminated by the thermally expandable particles and the expanded adhesive layer. Furthermore, by making the adhesive layer (X1) and the adhesive layer (X2) have different mechanisms for reducing the adhesive force of the adhesive layer, it is possible to prevent the adhesive force of the other adhesive layer from being undesirably reduced when the adhesive force of one adhesive layer is treated to reduce the adhesive force.

黏著劑層(X2)為非熱膨脹性層較佳,由上述式算出之黏著劑層(X2)的體積變化率(%),為未達5%,較佳為未達2%,更佳為未達1%,進而佳為未達0.1%,再更佳為未達0.01%。 黏著劑層(X2),雖不含熱膨脹性粒子較佳,但不違反本發明之目的的範圍內亦可含有熱膨脹性粒子。 黏著劑層(X2)含有熱膨脹性粒子時,其含量越少越好,相對於黏著劑層(X2)之總質量(100質量%),較佳為未達3質量%,更佳為未達1質量%,進而佳為未達0.1質量%,再更佳為未達0.01質量%,再更佳為未達0.001質量%。The adhesive layer (X2) is preferably a non-thermally expandable layer, and the volume change rate (%) of the adhesive layer (X2) calculated by the above formula is less than 5%, preferably less than 2%, more preferably less than 1%, further preferably less than 0.1%, and even more preferably less than 0.01%. Although it is preferred that the adhesive layer (X2) does not contain thermally expandable particles, it may contain thermally expandable particles within the scope that does not violate the purpose of the present invention. When the adhesive layer (X2) contains thermally expandable particles, the content thereof is as low as possible, and is preferably less than 3 mass%, more preferably less than 1 mass%, further preferably less than 0.1 mass%, further preferably less than 0.01 mass%, and further preferably less than 0.001 mass%, relative to the total mass (100 mass%) of the adhesive layer (X2).

黏著劑層(X2),由能量線硬化性黏著劑組成物(x-2) (以下,亦僅稱為「黏著劑組成物(x-2)」)形成較佳。 藉由由黏著劑組成物(x-2)形成,可將黏著劑層(X2)做成藉由能量線照射硬化而黏著力降低的黏著劑層。 以下,說明關於黏著劑組成物(x-2)中含有之各成分。The adhesive layer (X2) is preferably formed of an energy-ray-curable adhesive composition (x-2) (hereinafter, also simply referred to as "adhesive composition (x-2)"). By forming the adhesive layer (X2) from the adhesive composition (x-2), the adhesive layer (X2) can be made into an adhesive layer whose adhesive force is reduced by curing by energy-ray irradiation. The following describes the components contained in the adhesive composition (x-2).

作為能量線硬化性黏著劑組成物(x-2),可舉例與非能量線硬化性之黏著性樹脂(I) (以下,亦稱為「黏著性樹脂(I)」)一起包含能量線硬化性低分子化合物之黏著劑組成物(x-2A),或包含於非能量線硬化性之黏著性樹脂的側鏈導入不飽和基的能量線硬化性之黏著性樹脂(II) (以下,亦稱為「黏著性樹脂(II)」)之黏著劑組成物(x-2B)等。Examples of the energy ray-hardening adhesive composition (x-2) include an adhesive composition (x-2A) containing an energy ray-hardening low molecular weight compound together with a non-energy ray-hardening adhesive resin (I) (hereinafter, also referred to as "adhesive resin (I)"), or an adhesive composition (x-2B) containing an energy ray-hardening adhesive resin (II) (hereinafter, also referred to as "adhesive resin (II)") in which an unsaturated group is introduced into the side chain of a non-energy ray-hardening adhesive resin.

[非能量線硬化性之黏著性樹脂(I)] 非能量線硬化性之黏著性樹脂(I)的質量平均分子量(Mw),較佳為25萬~150萬,更佳為35萬~130萬,進而佳為45萬~110萬,再更佳為65萬~105萬。[Non-energy ray-curable adhesive resin (I)] The mass average molecular weight (Mw) of the non-energy ray-curable adhesive resin (I) is preferably 250,000 to 1.5 million, more preferably 350,000 to 1.3 million, further preferably 450,000 to 1.1 million, and even more preferably 650,000 to 1.05 million.

作為非能量線硬化性之黏著性樹脂(I),可舉例例如丙烯酸系樹脂、橡膠系樹脂、聚矽氧系樹脂等。此等之中,以丙烯酸系樹脂較佳。 以下,詳述關於丙烯酸系樹脂。Examples of non-energy ray-curable adhesive resins (I) include acrylic resins, rubber resins, silicone resins, etc. Among these, acrylic resins are preferred. The following describes acrylic resins in detail.

(丙烯酸系樹脂) 作為丙烯酸系樹脂,以包含源自具有碳數4以上之烷基的烷基(甲基)丙烯酸酯單體(以下,亦稱為「單體(p1)」)之結構單元(p1)的樹脂較佳。 丙烯酸系樹脂,雖可為僅由源自上述單體(p1)之結構單元(p1)而成之均聚物,但以於結構單元(p1)一起進而包含源自具有碳數1~3之烷基的烷基(甲基)丙烯酸酯單體(以下,亦稱為「單體(p2)」)之結構單元(p2)及/或源自含官能基之單體(p3) (以下,亦稱為「單體(p3)」)之結構單元(p3)的共聚物較佳。(Acrylic resin) As the acrylic resin, a resin containing a structural unit (p1) derived from an alkyl (meth)acrylate monomer having an alkyl group with 4 or more carbon atoms (hereinafter, also referred to as "monomer (p1)") is preferred. The acrylic resin may be a homopolymer composed only of the structural unit (p1) derived from the above-mentioned monomer (p1), but a copolymer containing a structural unit (p2) derived from an alkyl (meth)acrylate monomer having an alkyl group with 1 to 3 carbon atoms (hereinafter, also referred to as "monomer (p2)") and/or a structural unit (p3) derived from a monomer containing a functional group (hereinafter, also referred to as "monomer (p3)") together with the structural unit (p1) is preferred.

作為單體(p1)所具有之烷基的碳數,由提升黏著劑層(X2)之黏著力之觀點來看,較佳為4~20,更佳為4~12,進而佳為4~6。又,單體(p1)之烷基,可為直鏈及支鏈之任一者。From the viewpoint of improving the adhesion of the adhesive layer (X2), the carbon number of the alkyl group of the monomer (p1) is preferably 4 to 20, more preferably 4 to 12, and even more preferably 4 to 6. The alkyl group of the monomer (p1) may be a linear chain or a branched chain.

作為單體(p1),可舉例例如丁基(甲基)丙烯酸酯、戊基(甲基)丙烯酸酯、己基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、辛基(甲基)丙烯酸酯、月桂基(甲基)丙烯酸酯、硬脂基(甲基)丙烯酸酯等。 此外,此等之單體(p1)可單獨使用1種,亦可併用2種以上。 此等之中,由提升黏著劑層(X2)之黏著力之觀點來看,以丁基(甲基)丙烯酸酯較佳。Examples of the monomer (p1) include butyl (meth)acrylate, amyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, octyl (meth)acrylate, lauryl (meth)acrylate, and stearyl (meth)acrylate. In addition, these monomers (p1) may be used alone or in combination of two or more. Among these, butyl (meth)acrylate is preferred from the viewpoint of improving the adhesion of the adhesive layer (X2).

結構單元(p1)相對於丙烯酸系樹脂為共聚物時之丙烯酸系樹脂的全結構單元的含量,較佳為40~98質量%,更佳為45~95質量%,進而佳為50~90質量%。The content of the structural unit (p1) relative to the total structural units of the acrylic resin when the acrylic resin is a copolymer is preferably 40 to 98 mass %, more preferably 45 to 95 mass %, and even more preferably 50 to 90 mass %.

作為單體(p2),可舉例例如甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、丙基(甲基)丙烯酸酯等。 此外,此等之單體(p2)可單獨使用1種,亦可併用2種以上。 此等之中,以甲基(甲基)丙烯酸酯較佳。Examples of the monomer (p2) include methyl (meth)acrylate, ethyl (meth)acrylate, and propyl (meth)acrylate. In addition, one of these monomers (p2) may be used alone, or two or more may be used in combination. Among these, methyl (meth)acrylate is preferred.

結構單元(p2)相對於丙烯酸系樹脂為共聚物時之丙烯酸系樹脂的全結構單元的含量,較佳為1~30質量%,更佳為3~26質量%,進而佳為6~22質量%。The content of the structural unit (p2) relative to the total structural units of the acrylic resin when the acrylic resin is a copolymer is preferably 1 to 30 mass %, more preferably 3 to 26 mass %, and even more preferably 6 to 22 mass %.

單體(p3),係指與後述之交聯劑反應,具有可成為交聯起點之官能基或具有交聯促進效果之官能基的單體。 作為單體(p3)所具有的官能基,可舉例例如羥基、羧基、胺基、環氧基等。此等之中,由與交聯劑之反應性之觀點來看,以羧基或羥基較佳。Monomer (p3) refers to a monomer that reacts with a crosslinking agent described below and has a functional group that can serve as a crosslinking starting point or a functional group that has a crosslinking promoting effect. Examples of the functional group possessed by monomer (p3) include hydroxyl, carboxyl, amino, and epoxy groups. Among these, carboxyl or hydroxyl groups are preferred from the perspective of reactivity with a crosslinking agent.

作為單體(p3),可舉例例如含羥基之單體、含羧基之單體、含胺基之單體、含環氧基之單體等。 此等之單體(p3)可單獨使用1種,亦可併用2種以上。 此等之中,以含羥基之單體、含羧基之單體較佳,含羥基之單體更佳。Examples of the monomer (p3) include hydroxyl-containing monomers, carboxyl-containing monomers, amino-containing monomers, and epoxy-containing monomers. These monomers (p3) may be used alone or in combination of two or more. Among these, hydroxyl-containing monomers and carboxyl-containing monomers are preferred, and hydroxyl-containing monomers are more preferred.

作為含羥基之單體,可舉例例如2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、3-羥基丙基(甲基)丙烯酸酯、2-羥基丁基(甲基)丙烯酸酯、3-羥基丁基(甲基)丙烯酸酯、4-羥基丁基(甲基)丙烯酸酯等之羥基烷基(甲基)丙烯酸酯類;乙烯醇、烯丙醇等之不飽和醇類等。Examples of the hydroxyl group-containing monomer include hydroxyalkyl (meth)acrylates such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and the like; and unsaturated alcohols such as vinyl alcohol and allyl alcohol.

作為含羧基之單體,可舉例例如(甲基)丙烯酸、巴豆酸等之乙烯性不飽和單羧酸;富馬酸、伊康酸、馬來酸、檸康酸等之乙烯性不飽和二羧酸及其酐、2-羧基乙基甲基丙烯酸酯等。Examples of the carboxyl group-containing monomer include ethylenically unsaturated monocarboxylic acids such as (meth)acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid, citric acid and their anhydrides; and 2-carboxyethyl methacrylate.

結構單元(p3)相對於丙烯酸系樹脂為共聚物時之丙烯酸系樹脂之全結構單元的含量,較佳為1~35質量%,更佳為3~32質量%,進而佳為6~30質量%。The content of the structural unit (p3) relative to the total structural units of the acrylic resin when the acrylic resin is a copolymer is preferably 1 to 35 mass %, more preferably 3 to 32 mass %, and even more preferably 6 to 30 mass %.

又,丙烯酸系樹脂,亦可包含上述結構單元(p1)~(p3)以外之,源自可與丙烯酸系單體共聚合之單體的結構單元。作為該單體,可舉例苯乙烯、α-甲基苯乙烯、乙烯基甲苯、甲酸乙烯基、乙酸乙烯酯、丙烯腈、丙烯醯胺等。In addition, the acrylic resin may also contain structural units derived from monomers copolymerizable with the acrylic monomers in addition to the above structural units (p1) to (p3). Examples of such monomers include styrene, α-methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, and acrylamide.

[能量線硬化性之黏著性樹脂(II)] 黏著性樹脂(II),為於上述非能量線硬化性之黏著性樹脂(I)之側鏈導入不飽和基的能量線硬化性之黏著性樹脂。 作為於側鏈導入不飽和基的能量線硬化性之黏著性樹脂(II)的質量平均分子量(Mw),較佳為30萬~160萬,更佳為40萬~140萬,進而佳為50萬~120萬,再更佳為70萬~110萬。 作為黏著性樹脂(II)之主鏈,雖可使用上述之黏著性樹脂(I),但以丙烯酸系樹脂較佳,具有結構單元(p1)、(p2)及(p3)之丙烯酸系共聚物更佳。 作為於黏著性樹脂(II)之側鏈具有的不飽和基,雖可舉例(甲基)丙烯醯基、乙烯基、烯丙基等,但以(甲基)丙烯醯基較佳。[Energy ray-curable adhesive resin (II)] The adhesive resin (II) is an energy ray-curable adhesive resin having an unsaturated group introduced into the side chain of the above-mentioned non-energy ray-curable adhesive resin (I). The mass average molecular weight (Mw) of the energy ray-curable adhesive resin (II) having an unsaturated group introduced into the side chain is preferably 300,000 to 1.6 million, more preferably 400,000 to 1.4 million, further preferably 500,000 to 1.2 million, and even more preferably 700,000 to 1.1 million. As the main chain of the adhesive resin (II), although the above-mentioned adhesive resin (I) can be used, an acrylic resin is preferred, and an acrylic copolymer having structural units (p1), (p2) and (p3) is more preferred. As the unsaturated group in the side chain of the adhesive resin (II), examples include (meth)acryl, vinyl, allyl, etc., but (meth)acryl is preferred.

黏著性樹脂(II)之合成法,可舉例例如可使含官能基之單體共聚合至黏著性樹脂(I)設置官能基,加入具有可與該官能基鍵結的取代基及不飽和基兩者的化合物,使共聚物之官能基與該取代基鍵結的方法。 作為共聚合至黏著性樹脂(I)的含官能基之單體,可舉例作為上述單體(p3)所舉出的化合物。 作為與該官能基鍵結的取代基,可舉例異氰酸酯基、環氧丙基等。 因此,作為具有可與該官能基鍵結的取代基及不飽和基兩者的化合物,可舉例例如(甲基)丙烯醯氧基乙基異氰酸酯、(甲基)丙烯醯基異氰酸酯、環氧丙基(甲基)丙烯酸酯。The synthesis method of the adhesive resin (II) includes, for example, a method in which a functional group-containing monomer is copolymerized to the adhesive resin (I) to provide a functional group, and a compound having both a substituent group and an unsaturated group that can bond to the functional group is added to allow the functional group of the copolymer to bond to the substituent group. As the functional group-containing monomer copolymerized to the adhesive resin (I), the compounds listed as the above-mentioned monomer (p3) can be cited. As the substituent group that bonds to the functional group, an isocyanate group, a glycidyl group, etc. can be cited. Therefore, examples of the compound having both a substituent capable of bonding to the functional group and an unsaturated group include (meth)acryloxyethyl isocyanate, (meth)acryl isocyanate, and glyoxypropyl (meth)acrylate.

[交聯劑] 黏著劑組成物(x-2A)及(x-2B),進而含有交聯劑較佳。 添加交聯劑之主要目的,係與源自上述丙烯酸系樹脂所具有的單體(p3)的官能基等之非能量線硬化性之黏著性樹脂(I)或能量線硬化性之黏著性樹脂(II)於側鏈具有的官能基進行反應,使黏著性樹脂彼此交聯。[Crosslinking agent] The adhesive composition (x-2A) and (x-2B) preferably contain a crosslinking agent. The main purpose of adding the crosslinking agent is to react with the functional group of the non-energy ray-curable adhesive resin (I) or the energy ray-curable adhesive resin (II) in the side chain derived from the functional group of the monomer (p3) possessed by the above-mentioned acrylic resin, so as to crosslink the adhesive resins with each other.

作為交聯劑,可舉例例如甲苯二異氰酸酯、六亞甲基二異氰酸酯,及該等之加成物等之異氰酸酯系交聯劑;乙二醇環氧丙基醚等之環氧系交聯劑;六[1-(2-甲基)-氮丙啶基]三磷三等之氮丙啶系交聯劑;鋁螯合物等之螯合物系交聯劑;等。此等之交聯劑可單獨使用1種,亦可併用2種以上。 此等之中,由提高凝集力提升黏著力之觀點,及入手容易度等之觀點來看,以異氰酸酯系交聯劑較佳。Examples of the crosslinking agent include isocyanate crosslinking agents such as toluene diisocyanate, hexamethylene diisocyanate, and adducts thereof; epoxy crosslinking agents such as ethylene glycol epoxypropyl ether; hexa[1-(2-methyl)-aziridinyl]triphosphocyanate; Aziridine crosslinking agents such as aziridine; chelate crosslinking agents such as aluminum chelate; etc. These crosslinking agents can be used alone or in combination of two or more. Among these, isocyanate crosslinking agents are preferred from the perspective of increasing cohesion and adhesion, and from the perspective of ease of handling.

交聯劑的摻合量,雖依據黏著性樹脂(I)及(II)之結構中具有的官能基數來適當地調整即可,但由促進交聯反應之觀點來看,相對於黏著性樹脂(I)及(II)100質量份而言,較佳為0.01~10質量份,更佳為0.03~7質量份,進而佳為0.05~4質量份。The amount of the crosslinking agent blended may be appropriately adjusted depending on the number of functional groups in the structures of the adhesive resins (I) and (II). However, from the viewpoint of promoting the crosslinking reaction, the amount is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 7 parts by mass, and even more preferably 0.05 to 4 parts by mass, relative to 100 parts by mass of the adhesive resins (I) and (II).

[光聚合起始劑] 又,黏著劑組成物(x-2A)及(x-2B),進而含有光聚合起始劑較佳。藉由含有光聚合起始劑,即使是紫外線等之相對低能量的能量線,亦能使硬化反應充分地進行。 作為光聚合起始劑,可舉例例如1-羥基-環己基-苯基-酮、安息香、安息香甲基醚、安息香乙基醚、安息香丙基醚、苄基苯基硫化物、四甲基硫拉母單硫化物、偶氮雙異丁腈、聯苄、聯乙醯、8-氯蒽醌等。 此等之光聚合起始劑可單獨使用1種,亦可併用2種以上。 光聚合起始劑的摻合量,相對於黏著性樹脂(I)及(II) 100質量份而言,較佳為0.01~10質量份,更佳為0.03~5質量份,進而佳為0.05~2質量份。[Photopolymerization initiator] In addition, the adhesive composition (x-2A) and (x-2B) preferably contain a photopolymerization initiator. By containing a photopolymerization initiator, the curing reaction can be fully carried out even with relatively low energy rays such as ultraviolet rays. As the photopolymerization initiator, for example, 1-hydroxy-cyclohexyl-phenyl-ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzyl phenyl sulfide, tetramethylsulfonyl monosulfide, azobisisobutyronitrile, bibenzyl, diacetyl, 8-chloroanthraquinone, etc. can be cited. These photopolymerization initiators can be used alone or in combination of two or more. The amount of the photopolymerization initiator blended is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 5 parts by mass, and even more preferably 0.05 to 2 parts by mass, relative to 100 parts by mass of the adhesive resins (I) and (II).

[其他添加劑] 黏著劑組成物(x-2A)及(x-2B)中,在不損及本發明效果之範圍內,亦可含有其他添加劑。 作為其他添加劑,可舉例與黏著劑層(X1)可含有之增黏劑及黏著劑用添加劑相同者,合適的態樣及含量亦相同。[Other additives] The adhesive compositions (x-2A) and (x-2B) may contain other additives within the range that does not impair the effects of the present invention. Other additives include the same thickeners and adhesive additives that may be contained in the adhesive layer (X1), and the appropriate configuration and content are also the same.

又,黏著劑組成物(x-2A)及(x-2B),由提升對基材、剝離片等之塗佈性之觀點來看,亦可以溶劑稀釋做成溶液的形態。 作為溶劑,可舉例例如甲基乙基酮、丙酮、乙酸乙酯、四氫呋喃、二烷、環己烷、n-己烷、甲苯、二甲苯、n-丙醇、異丙醇等。 此外,此等之溶劑,可直接使用於黏著性樹脂(I)及(II)之生成時使用的溶劑,而為使該黏著劑組成物之溶液可均勻地塗佈,亦可加入1種以上之調製時使用之溶劑以外的溶劑。In addition, the adhesive compositions (x-2A) and (x-2B) can also be diluted with a solvent to form a solution from the viewpoint of improving the coating properties on the substrate, the release sheet, etc. Examples of the solvent include methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dihydrofuran, In addition, these solvents can be directly used as solvents used in the production of adhesive resins (I) and (II), and in order to make the solution of the adhesive composition evenly spread, one or more solvents other than the solvents used in the preparation can be added.

以溶劑稀釋黏著劑組成物(x-2A)及(x-2B)時,其固體成分濃度,較佳為5~60質量%,更佳為10~45質量%,進而佳為以成為15~30質量%之方式摻合溶劑較佳。When the adhesive compositions (x-2A) and (x-2B) are diluted with a solvent, the solid content concentration is preferably 5 to 60% by mass, more preferably 10 to 45% by mass, and further preferably 15 to 30% by mass.

黏著劑組成物(x-2),可藉由混合黏著性樹脂、視需要使用之交聯劑、光聚合起始劑、其他添加劑等來製造。The adhesive composition (x-2) can be produced by mixing an adhesive resin, a crosslinking agent, a photopolymerization initiator, and other additives as required.

[黏著劑層(X2)之物性等] (黏著劑層(X2)之黏著力) 黏著劑層(X2)之黏著表面中之能量線照射前之黏著力,較佳為4.0~30.0N/25mm,更佳為6.0~27.0N/25mm,進而佳為8.0~24.0N/25mm,再更佳為10.0~20.0N/25mm。 黏著劑層(X2)之黏著表面中之能量線照射前之黏著力若為4.0N/25mm以上,則可更有效地抑制暫時固定時之自被黏著體之不期望的剝離、被黏著體的位置偏移等。另一方面,該黏著力若為30.0N/25mm以下,則可壓低能量線照射後之黏著力。 黏著劑層(X2)之黏著表面中之能量線照射後之黏著力,較佳為0.01~2.0N/25mm,更佳為0.02~1.0N/25mm,進而佳為0.03~0.50N/25mm,再更佳為0.05~0.30N/25mm。 黏著劑層(X2)之黏著表面中之能量線照射後之黏著力若為0.01N/25mm以上,則可有效地抑制步驟中不期望的加工對象物之脫落。另一方面,該黏著力若為2.0N/25mm以下,則變得容易不對被黏著體造成損傷等來剝離。[Physical properties of adhesive layer (X2)] (Adhesion of adhesive layer (X2)) The adhesion of the adhesive surface of the adhesive layer (X2) before energy ray irradiation is preferably 4.0~30.0N/25mm, more preferably 6.0~27.0N/25mm, further preferably 8.0~24.0N/25mm, and further preferably 10.0~20.0N/25mm. If the adhesion of the adhesive surface of the adhesive layer (X2) before energy ray irradiation is 4.0N/25mm or more, it is more effective to suppress undesired peeling from the adherend during temporary fixing, positional deviation of the adherend, etc. On the other hand, if the adhesive force is less than 30.0N/25mm, the adhesive force after energy ray irradiation can be suppressed. The adhesive force after energy ray irradiation in the adhesive surface of the adhesive layer (X2) is preferably 0.01~2.0N/25mm, more preferably 0.02~1.0N/25mm, further preferably 0.03~0.50N/25mm, and further preferably 0.05~0.30N/25mm. If the adhesive force after energy ray irradiation in the adhesive surface of the adhesive layer (X2) is 0.01N/25mm or more, it can effectively suppress the undesired falling off of the processing object in the step. On the other hand, if the adhesive force is 2.0 N/25 mm or less, it becomes easy to peel off without causing damage to the adherend.

(黏著劑層(X2)之23℃下之剪切儲存模數G’(23)) 黏著劑層(X2)之23℃下之剪切儲存模數G’(23),較佳為5.0×103 ~1.0×107 Pa,更佳為1.0×104 ~5.0×106 Pa,進而佳為5.0×104 ~1.0×106 Pa。 黏著劑層(X2)之剪切儲存模數G’(23)若為5.0×103 Pa以上,有可抑制暫時固定時之被黏著體的位置偏移、被黏著體之對黏著劑層(X2)之過度沉入等的傾向。另一方面,該剪切儲存模數G’(23)若為1.0×107 Pa以下,則有提升與被黏著體之密著性的傾向。 此外,本說明書中,黏著劑層(X2)之23℃下之剪切儲存模數G’(23),可藉由與黏著劑層(X1)之23℃下之剪切儲存模數G’相同的方法來測定。(Shear storage modulus G'(23) of the adhesive layer (X2) at 23°C) The shear storage modulus G'(23) of the adhesive layer (X2) at 23°C is preferably 5.0×10 3 to 1.0×10 7 Pa, more preferably 1.0×10 4 to 5.0×10 6 Pa, and further preferably 5.0×10 4 to 1.0×10 6 Pa. When the shear storage modulus G'(23) of the adhesive layer (X2) is 5.0×10 3 Pa or more, there is a tendency to suppress positional deviation of the adherend during temporary fixing and excessive sinking of the adherend into the adhesive layer (X2). On the other hand, if the shear storage modulus G'(23) is 1.0×10 7 Pa or less, the adhesion to the adherend tends to be improved. In the present specification, the shear storage modulus G'(23) at 23°C of the adhesive layer (X2) can be measured by the same method as the shear storage modulus G' at 23°C of the adhesive layer (X1).

(黏著劑層(X2)之23℃下之厚度) 黏著劑層(X2)之23℃下之厚度,較佳為5~150μm,更佳為8~100μm,進而佳為12~70μm,再更佳為15~50μm。 黏著劑層(X2)之23℃下之厚度若為5μm以上,有變得容易得到充分的黏著力,可抑制暫時固定時之自被黏著體之不期望的剝離、被黏著體的位置偏移等的傾向。另一方面,黏著劑層(X2)之23℃下之厚度若為150μm以下,有黏著片之操作變得容易的傾向。(Thickness of adhesive layer (X2) at 23°C) The thickness of the adhesive layer (X2) at 23°C is preferably 5 to 150 μm, more preferably 8 to 100 μm, further preferably 12 to 70 μm, and further preferably 15 to 50 μm. If the thickness of the adhesive layer (X2) at 23°C is 5 μm or more, it is easy to obtain sufficient adhesion, and it tends to suppress undesired peeling from the adherend during temporary fixing, positional deviation of the adherend, etc. On the other hand, if the thickness of the adhesive layer (X2) at 23°C is 150 μm or less, it tends to be easy to handle the adhesive sheet.

<剝離材> 作為剝離材,使用經兩面剝離處理之剝離片、經單面剝離處理之剝離片等,可舉例於剝離材用之基材上塗佈剝離劑而成者。 作為剝離材用之基材,可舉例例如塑膠薄膜、紙類等。作為塑膠薄膜,可舉例例如聚對酞酸乙二酯樹脂、聚對酞酸丁二酯樹脂、聚萘二甲酸乙二醇酯樹脂等之聚酯樹脂薄膜;聚丙烯樹脂、聚乙烯樹脂等之烯烴樹脂薄膜等,作為紙類,可舉例例如上質紙、半透明紙(glassine paper)、牛皮紙等。<Peeling material> As peeling materials, peeling sheets with double-sided peeling treatment, peeling sheets with single-sided peeling treatment, etc. are used. For example, peeling materials obtained by coating a peeling agent on a base material for peeling materials. As base materials for peeling materials, for example, plastic films, papers, etc. are exemplified. As plastic films, polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, polyethylene naphthalate resin, etc.; olefin resin films such as polypropylene resin, polyethylene resin, etc. are exemplified. As paper, for example, high-quality paper, translucent paper (glassine paper), kraft paper, etc. are exemplified.

作為剝離劑,可舉例例如聚矽氧系樹脂、烯烴系樹脂、異戊二烯系樹脂、丁二烯系樹脂等之橡膠系彈性體;長鏈烷基系樹脂、醇酸系樹脂、氟系樹脂等。剝離劑可單獨使用1種,亦可併用2種以上。Examples of the stripping agent include rubber elastomers such as silicone resins, olefin resins, isoprene resins, butadiene resins, and the like; long-chain alkyl resins, alkyd resins, fluorine resins, and the like. The stripping agent may be used alone or in combination of two or more.

剝離材之厚度,較佳為10~200μm,更佳為20~150μm,進而佳為35~80μm。The thickness of the peeling material is preferably 10-200 μm, more preferably 20-150 μm, and further preferably 35-80 μm.

<黏著片之製造方法> 本發明之一態樣中使用的黏著片之製造方法,適當選擇適合於使用之材料的種類等之方法較佳。 以下,雖說明關於黏著劑層(X1)使用上述聚合性組成物(x-1A)或黏著劑組成物(x-1B)形成的黏著片之製造方法,但本發明之一態樣中使用的黏著片之製造方法,不限定於此等之方法。<Method for producing adhesive sheet> The method for producing the adhesive sheet used in one embodiment of the present invention is preferably a method that appropriately selects the type of material suitable for use. Although the following describes a method for producing an adhesive sheet in which the adhesive layer (X1) is formed using the above-mentioned polymerizable composition (x-1A) or adhesive composition (x-1B), the method for producing the adhesive sheet used in one embodiment of the present invention is not limited to such methods.

-使用聚合性組成物(x-1A)的方法- 黏著劑層(X1)之形成中使用聚合性組成物(x-1A)之情形中,本發明之一態樣中使用的黏著片,藉由包含對聚合性組成物(x-1A)照射能量線,形成該能量線聚合性成分之聚合物的步驟之方法來製造較佳。更具體而言,包含下述步驟IA~IIIA較佳。 步驟IA:於基材(Y)之一面側,形成由聚合性組成物(x-1A)而成之聚合性組成物層的步驟 步驟IIA:藉由對前述聚合性組成物層照射能量線,形成前述能量線聚合性成分之聚合物,形成含有該聚合物與前述熱膨脹性粒子之黏著劑層(X1)的步驟 步驟IIIA:於基材(Y)之另一面側形成黏著劑層(X2)的步驟 以下,說明關於步驟IA~IIIA。-Method using polymerizable composition (x-1A)- In the case where the polymerizable composition (x-1A) is used in the formation of the adhesive layer (X1), the adhesive sheet used in one embodiment of the present invention is preferably manufactured by a method comprising the step of irradiating the polymerizable composition (x-1A) with energy rays to form a polymer of the energy ray polymerizable component. More specifically, it is preferred to include the following steps IA to IIIA. Step IA: A step of forming a polymerizable composition layer composed of a polymerizable composition (x-1A) on one side of the substrate (Y) Step IIA: A step of forming a polymer of the energy ray polymerizable component by irradiating the aforementioned polymerizable composition layer with energy rays, and forming an adhesive layer (X1) containing the polymer and the aforementioned thermal expansion particles Step IIIA: A step of forming an adhesive layer (X2) on the other side of the substrate (Y) Steps IA to IIIA are described below.

[步驟IA] 步驟IA,雖只要是於基材(Y)之一面側形成聚合性組成物層的步驟便無特別限定,但包含下述步驟IA-1~IA-3較佳。 步驟IA-1:於剝離材之剝離處理面上塗佈聚合性組成物(x-1A)形成聚合性組成物層的步驟 步驟IA-2:對上述聚合性組成物層,進行第一能量線照射,使聚合性組成物層中之能量線聚合性成分進行預聚合的步驟 步驟IA-3:於第一能量線照射後的聚合性組成物層貼附基材(Y)的步驟[Step IA] Step IA is not particularly limited as long as it is a step of forming a polymerizable composition layer on one side of the substrate (Y), but preferably includes the following steps IA-1 to IA-3. Step IA-1: A step of coating a polymerizable composition (x-1A) on the peeling treatment surface of the peeling material to form a polymerizable composition layer Step IA-2: A step of irradiating the above-mentioned polymerizable composition layer with a first energy ray to pre-polymerize the energy ray polymerizable components in the polymerizable composition layer Step IA-3: A step of attaching the polymerizable composition layer after the first energy ray irradiation to the substrate (Y)

(步驟IA-1) 步驟IA-1,係於剝離材之剝離處理面上塗佈聚合性組成物(x-1A)形成聚合性組成物層的步驟。 步驟IA-1中,作為於剝離材塗佈聚合性組成物(x-1A)的方法,可舉例例如旋轉塗佈法、噴霧塗佈法、棒塗佈法、刀塗佈法、輥塗佈法、刮刀塗佈法、模具塗佈法、凹版塗佈法等。(Step IA-1) Step IA-1 is a step of coating a polymerizable composition (x-1A) on the peeling treatment surface of the peeling material to form a polymerizable composition layer. In step IA-1, as a method for coating the polymerizable composition (x-1A) on the peeling material, for example, a rotary coating method, a spray coating method, a rod coating method, a knife coating method, a roller coating method, a doctor blade coating method, a mold coating method, a gravure coating method, etc. can be cited.

聚合性組成物(x-1A)如上述,為無溶劑型聚合性組成物較佳。聚合性組成物(x-1A)為無溶劑型聚合性組成物時,本步驟中可不實施溶劑之加熱乾燥步驟。另一方面,聚合性組成物(x-1A)在不違反本發明之目的的範圍內含有溶劑時,塗佈聚合性組成物(x-1A)後,雖亦可進行加熱乾燥,但該情形中的加熱溫度,定為未達熱膨脹性粒子之膨脹開始溫度(t)。As described above, the polymerizable composition (x-1A) is preferably a solvent-free polymerizable composition. When the polymerizable composition (x-1A) is a solvent-free polymerizable composition, the step of heating and drying the solvent in this step may not be performed. On the other hand, when the polymerizable composition (x-1A) contains a solvent within the scope that does not violate the purpose of the present invention, after applying the polymerizable composition (x-1A), heating and drying may also be performed, but the heating temperature in this case is determined to be less than the expansion start temperature (t) of the thermally expandable particles.

(步驟IA-2) 步驟IA-2,係對步驟IA-1中形成之聚合性組成物層,進行第一能量線照射,使聚合性組成物層中之能量線聚合性成分進行預聚合的步驟。 第一能量線照射,藉由使能量線聚合性成分預聚合而使聚合性組成物高黏度化,在提升聚合性組成物層之形狀維持性的目的下實施。 第一能量線照射中,不使能量線聚合性成分完全聚合,停留在預聚合。藉此可提升步驟IA-3中之聚合性組成物層與基材(Y)之密著性。(Step IA-2) Step IA-2 is a step of irradiating the polymerizable composition layer formed in step IA-1 with a first energy ray to prepolymerize the energy ray polymerizable components in the polymerizable composition layer. The first energy ray irradiation is performed for the purpose of increasing the viscosity of the polymerizable composition by prepolymerizing the energy ray polymerizable components, thereby improving the shape retention of the polymerizable composition layer. During the first energy ray irradiation, the energy ray polymerizable components are not completely polymerized but remain in the prepolymerization stage. This can improve the adhesion between the polymerizable composition layer in step IA-3 and the substrate (Y).

作為用於步驟IA-2之第一能量線照射的能量線,上述者之中,以操作容易的紫外線較佳。 第一能量線照射中之紫外線的照度,較佳為70~250 mW/cm2 ,更佳為100~200 mW/cm2 ,進而佳為130~170 mW/cm2 。又,第一能量線照射中之紫外線的光量,較佳為40~200 mJ/cm2 ,更佳為60~150 mJ/cm2 ,進而佳為80~ 120 mJ/cm2 。 第一能量線照射可以一次進行,亦可分成複數次進行。又,為了抑制聚合熱等所致之聚合性組成物層之溫度上升,亦可一邊冷卻聚合性組成物層一邊進行。As the energy ray used for the first energy ray irradiation in step IA-2, ultraviolet rays are preferred because they are easy to handle among the above. The illuminance of the ultraviolet rays in the first energy ray irradiation is preferably 70 to 250 mW/cm 2 , more preferably 100 to 200 mW/cm 2 , and further preferably 130 to 170 mW/cm 2 . Furthermore, the amount of ultraviolet rays in the first energy ray irradiation is preferably 40 to 200 mJ/cm 2 , more preferably 60 to 150 mJ/cm 2 , and further preferably 80 to 120 mJ/cm 2 . The first energy ray irradiation may be performed once or in multiple times. Furthermore, in order to suppress the temperature rise of the polymerizable composition layer due to polymerization heat, etc., it may be performed while cooling the polymerizable composition layer.

(步驟IA-3) 步驟IA-3,係於第一能量線照射後之聚合性組成物層貼附基材(Y)的步驟。 將基材(Y)貼附於聚合性組成物層的方法並無特別限定,可舉例例如將基材(Y)層合於聚合性組成物層表露出之面的方法。 層合可一邊加熱一邊進行,亦可以不加熱進行,但由抑制熱膨脹性粒子之膨脹的觀點來看,以不加熱進行較佳。此時,藉由第一能量線照射而預聚合之聚合性組成物層,即使不加熱對基材(Y)亦具有良好的密著性。(Step IA-3) Step IA-3 is a step of attaching the polymerizable composition layer to the substrate (Y) after the first energy ray irradiation. The method of attaching the substrate (Y) to the polymerizable composition layer is not particularly limited, and an example thereof is a method of laminating the substrate (Y) to the exposed surface of the polymerizable composition layer. Lamination can be performed while heating or without heating, but from the perspective of suppressing the expansion of thermally expandable particles, it is better to perform it without heating. At this time, the polymerizable composition layer pre-polymerized by the first energy ray irradiation has good adhesion to the substrate (Y) even without heating.

[步驟IIA] 步驟IIA,係藉由對於步驟IA形成之聚合性組成物層照射能量線,形成能量線聚合性成分之聚合物,形成含有該聚合物與熱膨脹性粒子之黏著劑層(X1)的步驟。[Step IIA] Step IIA is a step of irradiating the polymerizable composition layer formed in step IA with energy rays to form a polymer of the energy ray polymerizable component, thereby forming an adhesive layer (X1) containing the polymer and thermally expandable particles.

此處,步驟IA中進行第一能量線照射時,步驟IIA中之能量線照射,成為對預聚合後之聚合性組成物層進行的第二能量線照射。 步驟IIA之能量線照射,與第一能量線照射不同,進行至即使進一步照射能量線,實質上亦不進行能量線聚合性成分之聚合的程度為止較佳。 藉由步驟IIA之能量線照射,進行能量線聚合性成分之聚合,形成構成黏著劑層(X1)之能量線聚合性成分的聚合物。Here, when the first energy ray irradiation is performed in step IA, the energy ray irradiation in step IIA becomes the second energy ray irradiation performed on the pre-polymerized polymerizable composition layer. Unlike the first energy ray irradiation, the energy ray irradiation in step IIA is preferably performed to the extent that even if the energy ray is further irradiated, the polymerization of the energy ray polymerizable component does not substantially proceed. By the energy ray irradiation in step IIA, the energy ray polymerizable component is polymerized to form a polymer of the energy ray polymerizable component constituting the adhesive layer (X1).

作為使用於步驟IIA之能量線照射的能量線,上述者之中,以操作容易之紫外線較佳。 步驟IIA之能量線照射中之紫外線的照度,較佳為100~350 mW/cm2 ,更佳為150~300 mW/cm2 ,進而佳為180 ~250 mW/cm2 。 步驟IIA之能量線照射中之紫外線的光量,較佳為500 ~4,000 mJ/cm2 ,更佳為1,000~3,000 mJ/cm2 ,進而佳為1,500~2,500 mJ/cm2 。 步驟IIA之能量線照射可以一次進行,亦可分成複數次進行。又,為了抑制聚合熱等所致之聚合性組成物層之溫度上升,亦可一邊冷卻聚合性組成物層一邊進行。As the energy ray used in the energy ray irradiation of step IIA, ultraviolet rays are preferred because they are easy to handle among the above. The illuminance of the ultraviolet rays in the energy ray irradiation of step IIA is preferably 100-350 mW/cm 2 , more preferably 150-300 mW/cm 2 , and further preferably 180-250 mW/cm 2 . The amount of ultraviolet rays in the energy ray irradiation of step IIA is preferably 500-4,000 mJ/cm 2 , more preferably 1,000-3,000 mJ/cm 2 , and further preferably 1,500-2,500 mJ/cm 2 . The energy ray irradiation of step IIA may be performed once or in multiple times. Furthermore, in order to suppress the temperature rise of the polymerizable composition layer due to the heat of polymerization, the polymerizable composition layer may be cooled.

此外,步驟IA包含上述步驟IA-1~IA-3時,聚合性組成物層,作為依剝離材、聚合性組成物層及基材(Y)之順序層合之層合體的中間層而得。此時,第二能量線照射,亦可對具有該構成之層合體進行。該情形中,由使對作為層合體之中間層存在的聚合性組成物層照射充分的能量線成為可能之觀點來看,選自剝離材及基材(Y)中之1者以上,為具有能量線透過性者較佳。In addition, when step IA includes the above steps IA-1 to IA-3, the polymerizable composition layer is obtained as an intermediate layer of a laminated body laminated in the order of a peeling material, a polymerizable composition layer, and a substrate (Y). At this time, the second energy ray irradiation can also be performed on the laminated body having such a structure. In this case, from the perspective of making it possible to irradiate the polymerizable composition layer existing as an intermediate layer of the laminated body with sufficient energy rays, it is preferred that at least one of the peeling material and the substrate (Y) is selected to have energy ray transmittance.

由在上述步驟IA及IIA所含之任一步驟中,亦抑制熱膨脹性粒子之膨脹的觀點來看,不含加熱聚合性組成物的步驟較佳。 此外,此處所謂的「加熱」,例如,係指乾燥、層合時等之中期望的加熱的意思,不包含藉由能量線照射賦予聚合性組成物的熱、藉由能量線聚合性組成物之聚合產生的聚合熱等所致之溫度上升。 包含視需要加熱聚合性組成物之步驟時的加熱溫度,較佳為「較膨脹開始溫度(t)低的溫度」,更佳為「膨脹開始溫度(t)-5℃」以下,進而佳為「膨脹開始溫度(t)-10℃」以下,再更佳為「膨脹開始溫度(t)-15℃」以下。又,聚合性組成物之溫度不期望地上升時,聚合性組成物之溫度冷卻至成為上述溫度範圍較佳。From the viewpoint of suppressing the expansion of the heat-expandable particles in any of the steps IA and IIA, it is preferable not to heat the polymerizable composition. In addition, the "heating" mentioned here means the desired heating during drying, lamination, etc., and does not include the temperature rise caused by the heat given to the polymerizable composition by energy ray irradiation, the polymerization heat generated by the polymerization of the energy ray polymerizable composition, etc. The heating temperature in the step of heating the polymerizable composition as needed is preferably "a temperature lower than the expansion start temperature (t)", more preferably "expansion start temperature (t) - 5°C" or lower, further preferably "expansion start temperature (t) - 10°C" or lower, and further preferably "expansion start temperature (t) - 15°C" or lower. In addition, when the temperature of the polymerizable composition rises undesirably, the temperature of the polymerizable composition is preferably cooled to the above temperature range.

[步驟IIIA] 步驟IIIA,係於基材(Y)之另一面側形成黏著劑層(X2)的步驟。 黏著劑層(X2),包含下述步驟IIIA-1及IIIA-2較佳。 步驟IIIA-1:於剝離材之一面塗佈黏著劑組成物(x-2)形成黏著劑層(X2)的步驟 步驟IIIA-2:於基材(Y)之另一面側,貼附於步驟IIIA-1形成之黏著劑層(X2)的步驟[Step IIIA] Step IIIA is a step of forming an adhesive layer (X2) on the other side of the substrate (Y). The adhesive layer (X2) preferably includes the following steps IIIA-1 and IIIA-2. Step IIIA-1: A step of applying an adhesive composition (x-2) on one side of the peeling material to form an adhesive layer (X2) Step IIIA-2: A step of attaching the adhesive layer (X2) formed in step IIIA-1 to the other side of the substrate (Y)

步驟IIIA-1中,作為塗佈黏著劑組成物(x-2)的方法,可舉例與步驟IA-1中作為塗佈聚合性組成物(x-1A)之方法所舉出的方法相同的方法。又,黏著劑層(X2)含有溶劑時,亦可包含塗佈黏著劑組成物(x-2)後,使塗膜乾燥的步驟。 此外,如上述,步驟IIIA-1中使用之剝離材,與步驟IA-1中使用之剝離材,由抑制黏著劑層隨著2個剝離材被分割而剝離的現象之觀點來看,設計成剝離力不同者較佳。In step IIIA-1, as a method for applying the adhesive composition (x-2), the same method as the method cited as a method for applying the polymerizable composition (x-1A) in step IA-1 can be cited. In addition, when the adhesive layer (X2) contains a solvent, it can also include a step of drying the coating film after applying the adhesive composition (x-2). In addition, as mentioned above, the peeling material used in step IIIA-1 and the peeling material used in step IA-1 are preferably designed to have different peeling forces from the viewpoint of suppressing the phenomenon that the adhesive layer is peeled off as the two peeling materials are divided.

步驟IIIA-2中,作為於基材(Y)貼附黏著劑層(X2)的方法,可舉例與步驟IA-3中於聚合性組成物層貼附基材(Y)之方法相同的方法,較佳的態樣亦相同。In step IIIA-2, as a method for attaching the adhesive layer (X2) to the substrate (Y), the same method as the method for attaching the substrate (Y) to the polymerizable composition layer in step IA-3 can be cited, and the preferred embodiment is also the same.

-使用黏著劑組成物(x-1B)之方法- 黏著劑層(X1)之形成中使用上述黏著劑組成物(x-1B)之情形中,本發明之一態樣中使用的黏著片,例如,可藉由包含下述步驟IB~IIIB之方法來製造。 ・步驟IB:於剝離材之剝離處理面上,塗佈黏著劑組成物(x-1B)形成塗膜,乾燥該塗膜,形成黏著劑層(X1)的步驟 ・步驟IIB:於另一剝離材之剝離處理面上,塗佈黏著劑層之形成材料即黏著劑組成物(x-2)形成塗膜,乾燥該塗膜,形成黏著劑層(X2)的步驟 ・步驟IIIB:於基材一方的表面貼合於步驟IB形成的黏著劑層(X1),於基材另一方的表面貼合步驟IIB中形成之黏著劑層(X2)的步驟 各步驟中之黏著劑組成物的塗佈、乾燥及貼合之方法及條件之合適的態樣,與上述使用聚合性組成物(x-1A)的方法中所說明之方法及條件之合適的態樣相同。-Method using adhesive composition (x-1B)- In the case where the above-mentioned adhesive composition (x-1B) is used in the formation of the adhesive layer (X1), the adhesive sheet used in one embodiment of the present invention can be manufactured by a method comprising the following steps IB to IIIB, for example. ・Step IB: On the peeling treatment surface of the peeling material, an adhesive composition (x-1B) is applied to form a coating film, and the coating film is dried to form an adhesive layer (X1) ・Step IIB: On the peeling treatment surface of another peeling material, an adhesive layer forming material, i.e., an adhesive composition (x-2), is applied to form a coating film, and the coating film is dried to form an adhesive layer (X2) ・Step III B: A step of laminating the adhesive layer (X1) formed in step IB on one surface of the substrate, and laminating the adhesive layer (X2) formed in step IIB on the other surface of the substrate. The method and suitable conditions for coating, drying and laminating the adhesive composition in each step are the same as the method and suitable conditions described in the method using the polymerizable composition (x-1A).

[半導體裝置之製造方法之各步驟] 接著,關於本發明之一態樣的半導體裝置之製造方法所含的各步驟,一邊參照圖式一邊依序說明。此外,以下之說明中,雖主要說明使用半導體晶圓作為加工對象物時的例子,但其他加工對象物之情形亦相同。[Steps of the method for manufacturing a semiconductor device] Next, the steps of the method for manufacturing a semiconductor device according to one aspect of the present invention will be described in order with reference to the drawings. In addition, although the following description mainly describes an example of using a semiconductor wafer as a processing object, the same is true for other processing objects.

<步驟1> 步驟1,係將加工對象物貼附於黏著片具有之黏著劑層(X2),將支撐體貼附於黏著劑層(X1)的步驟。 圖2中,顯示說明將半導體晶圓W貼附於黏著片1a所具有的黏著劑層(X2),將支撐體2貼附於黏著劑層(X1)的步驟之剖面圖。 半導體晶圓W,電路面即表面W1以成為黏著劑層(X2)側被貼附。 半導體晶圓W,可為矽晶圓,亦可為鎵砷、碳化矽、藍寶石、鉭酸鋰、鈮酸鋰、氮化鎵、磷化銦等之晶圓、玻璃晶圓。 半導體晶圓W之研削前之厚度,通常為500~1,000 μm。 半導體晶圓W之表面W1所具有的電路,例如,可藉由蝕刻法、剝離法等之以往通用的方法來形成。<Step 1> Step 1 is a step of attaching the object to be processed to the adhesive layer (X2) of the adhesive sheet and attaching the support body to the adhesive layer (X1). FIG. 2 shows a cross-sectional view of the step of attaching the semiconductor wafer W to the adhesive layer (X2) of the adhesive sheet 1a and attaching the support body 2 to the adhesive layer (X1). The semiconductor wafer W is attached with the surface W1, which is the electrical path surface, being the adhesive layer (X2). The semiconductor wafer W may be a silicon wafer, or a wafer of gallium arsenide, silicon carbide, sapphire, lithium tantalum, lithium niobate, gallium nitride, indium phosphide, or a glass wafer. The thickness of the semiconductor wafer W before grinding is usually 500 to 1,000 μm. The circuit on the surface W1 of the semiconductor wafer W may be formed by conventional methods such as etching and stripping.

支撐體2之材質,視加工對象物之種類、加工內容等,考慮機械強度、耐熱性等之要求的特性後適當地選擇即可。 作為支撐體2之材質,可舉例例如SUS等之金屬材料;玻璃、矽晶圓等之非金屬無機材料;環氧樹脂、ABS樹脂、丙烯酸樹脂、工程塑膠、超級工程塑膠、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂等之樹脂材料;玻璃環氧樹脂等之複合材料等,此等之中,以SUS、玻璃、矽晶圓較佳。 作為上述工程塑膠,可舉例例如尼龍、聚碳酸酯(PC)、聚對酞酸乙二酯(PET)等。 作為上述超級工程塑膠,可舉例例如聚伸苯硫醚(PPS)、聚醚碸(PES)、聚醚醚酮(PEEK)等。The material of the support body 2 can be appropriately selected according to the type of the object to be processed, the processing content, etc., and the required characteristics such as mechanical strength and heat resistance. As the material of the support body 2, metal materials such as SUS, non-metallic inorganic materials such as glass and silicon wafers, resin materials such as epoxy resin, ABS resin, acrylic resin, engineering plastics, super engineering plastics, polyimide resin, polyamide imide resin, etc., and composite materials such as glass epoxy resin, etc. Among them, SUS, glass, and silicon wafers are preferred. As the above-mentioned engineering plastics, nylon, polycarbonate (PC), polyethylene terephthalate (PET), etc. can be cited. Examples of the super engineering plastics include polyphenylene sulfide (PPS), polyether sulfide (PES), and polyether ether ketone (PEEK).

支撐體2,係以貼附於黏著劑層(X1)之黏著表面整面較佳。因此,貼附於黏著劑層(X1)之黏著表面之側的支撐體2之表面的面積,為黏著劑層(X1)之黏著表面之面積以上較佳。又,貼附於黏著劑層(X1)之黏著表面之側的支撐體2之面為平面狀較佳。 支撐體2之形狀雖無特別限定,但為板狀較佳。 支撐體2之厚度,雖考慮要求的特性而適當地選擇即可,但較佳為20μm以上50mm以下,更佳為60μm以上20mm以下。The support body 2 is preferably attached to the entire adhesive surface of the adhesive layer (X1). Therefore, the surface area of the support body 2 attached to the adhesive surface of the adhesive layer (X1) is preferably greater than the area of the adhesive surface of the adhesive layer (X1). In addition, the surface of the support body 2 attached to the adhesive surface of the adhesive layer (X1) is preferably flat. The shape of the support body 2 is not particularly limited, but it is preferably in the form of a plate. The thickness of the support body 2 can be appropriately selected in consideration of the required characteristics, but is preferably greater than 20μm and less than 50mm, and more preferably greater than 60μm and less than 20mm.

<步驟2> 步驟2,係對前述加工對象物施行選自研削處理及個片化處理中之1種以上之加工處理的步驟。 作為選自研削處理及個片化處理中之1種以上之加工處理,可舉例例如使用磨床等的研削處理;刀片切割法、雷射切割法、隱形切割(註冊商標)法、刀片預切割法、隱形預切割法等所致之個片化處理。 此等之中,以隱形切割法進行之個片化處理、以刀片預切割法進行之研削處理及個片化處理、以隱形預切割法進行之研削處理及個片化處理為適宜,以刀片預切割法進行之研削處理及個片化處理、以隱形預切割法進行之研削處理及個片化處理更適宜。<Step 2> Step 2 is a step of performing one or more processing selected from grinding and individualization on the aforementioned processing object. As one or more processing selected from grinding and individualization, grinding using a grinder, etc., individualization by blade cutting, laser cutting, invisible cutting (registered trademark) method, blade pre-cutting method, invisible pre-cutting method, etc. can be cited. Among these, individualization processing by invisible cutting method, grinding processing and individualization processing by blade pre-cutting method, grinding processing and individualization processing by invisible pre-cutting method are suitable, and grinding processing and individualization processing by blade pre-cutting method, grinding processing and individualization processing by invisible pre-cutting method are more suitable.

隱形切割法,藉由雷射光之照射於半導體晶圓內部形成改質區域,將該改質區域作為分割起點,將半導體晶圓個片化的方法。於半導體晶圓形成之改質區域係藉由多光子吸收而脆質化的部分,因半導體晶圓擴展而對與晶圓面平行且晶圓擴張的方向施以應力,該改質區域作為起點向半導體晶圓之表面及背面龜裂伸展,藉此個片化成半導體晶片。即,改質區域係沿著個片化時的分割線形成。 改質區域,係藉由對半導體晶圓內部聚焦之雷射光的照射而於半導體晶圓之內部形成。雷射光的入射面,可為半導體晶圓之表面亦可為背面。又,雷射光入射面,可為黏著片貼附之面,該情形中,雷射光透過黏著片照射至半導體晶圓。Invisible dicing is a method of forming a modified area inside a semiconductor wafer by irradiating laser light, and using the modified area as a starting point for segmentation to separate the semiconductor wafer. The modified area formed in the semiconductor wafer is a portion that has become brittle due to multi-photon absorption. Due to the expansion of the semiconductor wafer, stress is applied in a direction parallel to the wafer surface and in the direction of wafer expansion. The modified area is used as a starting point to crack and extend toward the surface and back of the semiconductor wafer, thereby individualizing into semiconductor chips. That is, the modified area is formed along the segmentation line during segmentation. The modified area is formed inside the semiconductor wafer by irradiating the inside of the semiconductor wafer with laser light focused on it. The incident surface of the laser light can be the surface or the back of the semiconductor wafer. Furthermore, the laser light incident surface may be a surface to which the adhesive sheet is attached. In this case, the laser light is irradiated onto the semiconductor wafer through the adhesive sheet.

刀片預切割法,亦稱為DBG法(Dicing Before Grinding)。刀片預切割法,係沿著分割預定的線,預先以較半導體晶圓之厚度淺的深度形成溝後,將該半導體晶圓背面研削使其薄化至研削面至少到達溝為止並同時個片化的方法。研削面所到達之溝,成為貫通半導體晶圓貫通的切口,半導體晶圓藉由該切口被分割而個片化成半導體晶片。預先形成之溝,通常為設置於半導體晶圓之表面(電路面)者,例如,可藉由以往公知的使用具備切割刀片之晶圓切割裝置等的切割來形成。The blade pre-cutting method is also called the DBG method (Dicing Before Grinding). The blade pre-cutting method is a method in which a groove is formed in advance with a depth shallower than the thickness of the semiconductor wafer along the predetermined dividing line, and then the back of the semiconductor wafer is ground to thin it until the grinding surface at least reaches the groove and is sliced at the same time. The groove reached by the grinding surface becomes a cut that passes through the semiconductor wafer, and the semiconductor wafer is divided and sliced into semiconductor chips through the cut. The pre-formed groove is usually provided on the surface (conductor surface) of the semiconductor wafer, for example, it can be formed by cutting using a conventionally known wafer cutting device equipped with a cutting blade.

隱形預切割法,亦稱為SDBG法(Stealth Dicing Before Grinding)。隱形預切割法,與隱形切割法相同,藉由雷射光之照射於半導體晶圓內部形成改質區域,將該改質區域作為分割起點,將半導體晶圓個片化之方法的一種,但進行研削處理使半導體晶圓薄化同時將半導體晶圓個片化成半導體晶片之點與隱形切割法不同。具體而言,將具有改質區域之半導體晶圓背面研削使其薄化,同時,此時藉由施加於半導體晶圓的壓力將該改質區域作為起點向與半導體晶圓之黏著劑層的貼附面使龜裂伸展,將半導體晶圓個片化成半導體晶片。 此外,形成改質區域後之研削厚度,雖可為至改質區域的厚度,但即使不是嚴密地研削至改質區域,而是至接近改質區域之位置並以研削砥石等之加工壓力割斷亦可。 於SDBG流程經個片化之半導體晶片,成為彼此接觸的狀態,容易引起因振動而外緣部細欠缺之所謂的崩缺(chipping)現象。因此,藉由對支撐體強固地固定而可抑制振動之本發明之一態樣的半導體裝置之製造方法,特別適合於SDBG法。Stealth Dicing Before Grinding (SDBG) is also called Stealth Dicing Before Grinding (SDBG). The stealth pre-cutting method is the same as the stealth cutting method. It forms a modified area inside the semiconductor wafer by irradiating laser light, and uses the modified area as the starting point for segmentation to separate the semiconductor wafer. However, the point that the semiconductor wafer is thinned by grinding and the semiconductor wafer is separated into semiconductor chips is different from the stealth cutting method. Specifically, the back of the semiconductor wafer with the modified area is ground to make it thinner. At the same time, the pressure applied to the semiconductor wafer is used to extend the crack from the modified area as the starting point to the bonding surface of the adhesive layer of the semiconductor wafer, and the semiconductor wafer is separated into semiconductor chips. In addition, the grinding thickness after forming the modified area can be the thickness of the modified area, but even if it is not strictly ground to the modified area, it is also possible to cut it to a position close to the modified area and cut it with a processing pressure such as a grinding stone. In the SDBG process, the semiconductor chips that have been individualized are in contact with each other, which easily causes the so-called chipping phenomenon in which the outer edge is finely damaged due to vibration. Therefore, the manufacturing method of a semiconductor device of one aspect of the present invention that can suppress vibration by firmly fixing the support body is particularly suitable for the SDBG method.

藉由刀片預切割法將半導體晶圓W個片化時,於步驟1中貼附至黏著劑層(X2)之半導體晶圓W的表面W1上,預先形成溝較佳。 另一方面,藉由隱形預切割法將半導體晶圓W個片化時,可對於步驟1中貼附至黏著劑層(X2)之半導體晶圓W照射雷射光預先形成改質區域,亦可對貼附在黏著劑層(X2)之半導體晶圓W照射雷射光形成改質區域。When the semiconductor wafer W is sliced by the blade pre-cutting method, it is preferable to pre-form a groove on the surface W1 of the semiconductor wafer W attached to the adhesive layer (X2) in step 1. On the other hand, when the semiconductor wafer W is sliced by the invisible pre-cutting method, the semiconductor wafer W attached to the adhesive layer (X2) in step 1 can be irradiated with laser light to pre-form a modified area, and the semiconductor wafer W attached to the adhesive layer (X2) can also be irradiated with laser light to form a modified area.

圖3中,顯示說明對貼附在黏著劑層(X2)之半導體晶圓W,使用雷射光照射裝置3形成複數之改質區域4的步驟之剖面圖。 雷射光係由半導體晶圓W之背面W2側照射,於半導體晶圓W之內部略等間隔形成複數之改質區域4。FIG3 shows a cross-sectional view of the step of forming a plurality of modified regions 4 using a laser light irradiation device 3 on a semiconductor wafer W attached to an adhesive layer (X2). The laser light is irradiated from the back side W2 of the semiconductor wafer W to form a plurality of modified regions 4 at approximately equal intervals inside the semiconductor wafer W.

圖4中,顯示說明藉由磨床5研削形成有改質區域4之半導體晶圓W的背面W2,藉由將改質區域4作為起點的割斷,使半導體晶圓W薄化同時個片化成複數之半導體晶片CP的步驟之剖面圖。 形成有改質區域4之半導體晶圓W,例如,在將支撐該半導體晶圓W之支撐體2固定於夾頭台等之固定台上的狀態下,研削其背面W2。FIG4 shows a cross-sectional view of a step of grinding the back side W2 of a semiconductor wafer W having a modified region 4 by a grinder 5, and thinning the semiconductor wafer W by cutting starting from the modified region 4 and simultaneously individualizing the semiconductor wafer W into a plurality of semiconductor chips CP. The back side W2 of the semiconductor wafer W having a modified region 4 is ground while the support body 2 supporting the semiconductor wafer W is fixed on a fixed table such as a chuck table.

研削後之半導體晶片CP之厚度,較佳為5~ 100μm,更佳為10~45μm。又,藉由隱形預切割法進行研削處理及個片化處理時,經研削而得之半導體晶片CP之厚度定為50μm以下,更佳為定為10~45μm為容易。 研削後之半導體晶片CP之平面視中之大小,較佳為未達600mm2 ,更佳為未達400mm2 ,進而佳為未達300mm2 。此外,所謂平面視係指向厚度方向看。 個片化後之半導體晶片CP的平面視中之形狀,可為方形,亦可為矩形等之細長形狀。The thickness of the semiconductor chip CP after grinding is preferably 5 to 100 μm, more preferably 10 to 45 μm. Furthermore, when grinding and individualizing are performed by invisible pre-cutting method, the thickness of the semiconductor chip CP obtained by grinding is easily set to 50 μm or less, and more preferably 10 to 45 μm. The size of the semiconductor chip CP after grinding in a plane view is preferably less than 600 mm 2 , more preferably less than 400 mm 2 , and further preferably less than 300 mm 2. In addition, the so-called plane view refers to the thickness direction. The shape of the semiconductor chip CP after individualizing in a plane view can be square or a long and thin shape such as a rectangle.

<步驟3> 步驟3,係於經施行前述加工處理之加工對象物的與黏著劑層(X2)相反側之面,貼附熱硬化性薄膜的步驟。 圖5中,顯示說明於施予前述處理而得之複數的半導體晶片CP之與黏著劑層(X2)相反側之面,貼附具備支持片7之熱硬化性薄膜6的步驟之剖面圖。<Step 3> Step 3 is a step of attaching a thermosetting film to the surface of the object to be processed that is opposite to the adhesive layer (X2) after the aforementioned processing. FIG. 5 shows a cross-sectional view of the step of attaching a thermosetting film 6 having a support sheet 7 to the surface of a plurality of semiconductor chips CP that are obtained by the aforementioned processing that is opposite to the adhesive layer (X2).

熱硬化性薄膜6,係將至少含有熱硬化性樹脂之樹脂組成物製膜而得之具有熱硬化性的薄膜,作為將半導體晶片CP實裝至基板時的接著劑使用。熱硬化性薄膜6,視需要亦可含有上述熱硬化性樹脂之硬化劑、熱可塑性樹脂、無機填充材、硬化促進劑等。 作為熱硬化性薄膜6,可使用例如作為晶粒接合薄膜、晶片黏結薄膜等一般使用之熱硬化性薄膜。 熱硬化性薄膜6之厚度雖無特別限定,但通常為1~ 200μm,較佳為3~100μm,更佳為5~50μm。 支持片7,只要是可支撐熱硬化性薄膜6者即可,可舉例例如作為本發明之一態樣中使用的黏著片所具有的基材(Y)所舉出的樹脂、金屬、紙材等。The thermosetting film 6 is a thermosetting film obtained by forming a resin composition containing at least a thermosetting resin, and is used as an adhesive when mounting the semiconductor chip CP on a substrate. The thermosetting film 6 may also contain a curing agent for the above-mentioned thermosetting resin, a thermoplastic resin, an inorganic filler, a curing accelerator, etc. as needed. As the thermosetting film 6, a thermosetting film generally used as a die bonding film, a chip bonding film, etc. can be used. Although the thickness of the thermosetting film 6 is not particularly limited, it is usually 1~200μm, preferably 3~100μm, and more preferably 5~50μm. The support sheet 7 may be any material as long as it can support the thermosetting film 6, and examples thereof include resins, metals, and paper materials listed as the base material (Y) of the adhesive sheet used in one embodiment of the present invention.

作為將熱硬化性薄膜6貼附於複數之半導體晶片CP的方法,可舉例例如藉由層合之方法。 層合可一邊加熱一邊進行,亦可不加熱下進行。一邊加熱一邊進行層合時之加熱溫度,由抑制熱膨脹性粒子之膨脹的觀點及抑制被黏著體之熱變化的觀點來看,較佳為「較膨脹開始溫度(t)低的溫度」,更佳為「膨脹開始溫度(t)-5℃」以下,進而佳為「膨脹開始溫度(t)-10℃」以下,再更佳為「膨脹開始溫度(t)-15℃」以下。As a method of attaching the thermosetting film 6 to a plurality of semiconductor chips CP, for example, a method by lamination can be cited. Lamination can be performed while heating or without heating. The heating temperature when laminating while heating is preferably "a temperature lower than the expansion start temperature (t)" from the viewpoint of suppressing the expansion of the thermally expansive particles and suppressing the thermal change of the adherend, and is more preferably "the expansion start temperature (t) -5°C" or less, further preferably "the expansion start temperature (t) -10°C" or less, and even more preferably "the expansion start temperature (t) -15°C" or less.

<步驟4> 步驟4,係將前述黏著片加熱至前述膨脹開始溫度(t)以上,分離黏著劑層(X1)與前述支撐體的步驟。 圖6中,顯示說明加熱黏著片1a,分離黏著劑層(X1)與支撐體2的步驟之剖面圖。<Step 4> Step 4 is a step of heating the aforementioned adhesive sheet to a temperature above the aforementioned expansion start temperature (t) to separate the adhesive layer (X1) from the aforementioned support body. FIG. 6 shows a cross-sectional view illustrating the step of heating the adhesive sheet 1a to separate the adhesive layer (X1) from the support body 2.

步驟4中之加熱溫度,為熱膨脹性粒子之膨脹開始溫度(t)以上,較佳為「較膨脹開始溫度(t)高的溫度」,更佳為「膨脹開始溫度(t)+2℃」以上,進而佳為「膨脹開始溫度(t)+4℃」以上,再更佳為「膨脹開始溫度(t)+5℃」以上。又,步驟4中之加熱溫度由省能量性及抑制加熱剝離時中之被黏著體之熱變化之觀點來看,較佳為「膨脹開始溫度(t)+50℃」以下,更佳為「膨脹開始溫度(t)+40℃」以下,進而佳為「膨脹開始溫度(t)+20℃」以下。 步驟4中之加熱溫度,由抑制被黏著體之熱變化的觀點來看,在膨脹開始溫度(t)以上之範圍內,較佳為120℃以下,更佳為115℃以下,進而佳為110℃以下,再更佳為105℃以下。The heating temperature in step 4 is above the expansion start temperature (t) of the heat-expandable particles, preferably "a temperature higher than the expansion start temperature (t)", more preferably "expansion start temperature (t) + 2°C" or above, further preferably "expansion start temperature (t) + 4°C" or above, and further preferably "expansion start temperature (t) + 5°C" or above. In addition, from the perspective of energy saving and suppressing the thermal changes of the adherend during heat peeling, the heating temperature in step 4 is preferably below "expansion start temperature (t) + 50°C", more preferably below "expansion start temperature (t) + 40°C", and further preferably below "expansion start temperature (t) + 20°C". The heating temperature in step 4 is preferably 120°C or lower, more preferably 115°C or lower, further preferably 110°C or lower, and further preferably 105°C or lower, within the range above the expansion start temperature (t) from the viewpoint of suppressing thermal changes of the adherend.

<步驟5> 步驟5,係對黏著劑層(X2)照射能量線,分離黏著劑層(X2)與前述加工對象物的步驟。 圖7中,顯示說明分離黏著劑層(X2)與複數之半導體晶片CP的步驟之剖面圖。 黏著劑層(X2),由於藉由照射能量線硬化而黏著力降低,藉由能量線照射,可輕易分離加工對象物與黏著劑層(X2)。 作為用於步驟5之能量線照射的能量線,上述者之中,以操作容易的紫外線較佳。紫外線之照度及光量,雖只要照射使黏著劑層(X2)與加工對象物之密著性變得充分低的照度及光量即可,但例如,紫外線之照度,較佳為100~400 mW/cm2 ,更佳為150~350 mW/cm2 ,進而佳為180 ~300 mW/cm2 ,紫外線之光量,較佳為100~2,000 mJ/cm2 ,更佳為200~1,000 mJ/cm2 ,進而佳為300~500 mJ/cm2 。 能量線,雖只要能使黏著劑層(X2)硬化,自任何方向照射皆可,但由效率佳地使其硬化的觀點來看,自黏著劑層(X1)側照射較佳。此時,由使黏著劑層(X2)可充分地照射能量線的觀點來看,基材(Y)及黏著劑層(X1),為具有能量線透過性者較佳。<Step 5> Step 5 is a step of irradiating the adhesive layer (X2) with energy rays to separate the adhesive layer (X2) from the aforementioned processing object. FIG. 7 shows a cross-sectional view illustrating the step of separating the adhesive layer (X2) from a plurality of semiconductor chips CP. The adhesive layer (X2) is hardened by irradiation with energy rays, and the adhesive force is reduced. By irradiation with energy rays, the processing object and the adhesive layer (X2) can be easily separated. As the energy ray used for the energy ray irradiation in step 5, ultraviolet rays are preferably used because they are easy to handle among the above-mentioned ones. The illuminance and amount of ultraviolet light may be sufficiently low as long as the adhesive layer (X2) and the object to be processed are adhered to each other. For example, the illuminance of ultraviolet light is preferably 100-400 mW/cm 2 , more preferably 150-350 mW/cm 2 , and further preferably 180-300 mW/cm 2 . The amount of ultraviolet light is preferably 100-2,000 mJ/cm 2 , more preferably 200-1,000 mJ/cm 2 , and further preferably 300-500 mJ/cm 2 . Although the energy rays can be irradiated from any direction as long as the adhesive layer (X2) can be cured, it is preferred to irradiate from the adhesive layer (X1) side from the viewpoint of efficiently curing it. At this time, from the viewpoint of allowing the adhesive layer (X2) to be fully irradiated with the energy rays, the substrate (Y) and the adhesive layer (X1) are preferably those that have energy ray permeability.

經過上述步驟1~5,可獲得貼附於熱硬化性薄膜6上之複數的半導體晶片CP。 接著,以將貼附有複數之半導體晶片CP的熱硬化性薄膜6,分割成與半導體晶片CP相同形狀,獲得附有熱硬化性薄膜6之半導體晶片CP較佳。作為熱硬化性薄膜6之分割方法,例如,可適用以雷射光之雷射切割、擴展、溶斷等之方法。 圖8中,顯示附有經分割成與半導體晶片CP相同形狀的熱硬化性薄膜6之半導體晶片CP。After the above steps 1 to 5, a plurality of semiconductor chips CP attached to the thermosetting film 6 can be obtained. Then, the thermosetting film 6 attached to the plurality of semiconductor chips CP is divided into the same shape as the semiconductor chip CP to obtain a semiconductor chip CP attached with the thermosetting film 6. As a method for dividing the thermosetting film 6, for example, laser cutting, expansion, dissolution, etc. using laser light can be applied. FIG. 8 shows a semiconductor chip CP attached with the thermosetting film 6 divided into the same shape as the semiconductor chip CP.

附有熱硬化性薄膜6之半導體晶片CP,進而,視需要,適當施行擴展半導體晶片CP彼此之間隔的擴展步驟、排列經擴展間隔之複數之半導體晶片CP的再排列步驟、將複數之半導體晶片CP的表裡反轉的反轉步驟等後,自熱硬化性薄膜6側貼附(晶片黏結)於基板。之後,藉由使熱硬化性薄膜6熱硬化而可將半導體晶片與基板固著。 [實施例]The semiconductor chip CP with the thermosetting film 6 is then attached (chip bonding) to the substrate from the thermosetting film 6 side after appropriately performing an expansion step of expanding the interval between the semiconductor chips CP, a rearrangement step of arranging a plurality of semiconductor chips CP with the expanded interval, a reversal step of reversing the front and back of the plurality of semiconductor chips CP, etc. as needed. Thereafter, the semiconductor chip and the substrate can be fixed by thermally curing the thermosetting film 6. [Example]

關於本發明,雖藉由以下實施例來具體說明,但本發明並不限定於以下之實施例。 此外,以下之說明中所謂的「非膨脹性黏著劑層(X1’)」,係指不含熱膨脹性粒子之黏著劑層的意思,於剪切儲存模數G’之測定用所製作之不含熱膨脹性粒子之黏著劑層,屬於非膨脹性黏著劑層(X1’)。 以下之各例中之物性值,係藉由以下之方法所測定之值。Although the present invention is specifically described by the following examples, the present invention is not limited to the following examples. In addition, the "non-expandable adhesive layer (X1')" in the following description means an adhesive layer that does not contain thermally expandable particles. The adhesive layer that does not contain thermally expandable particles produced for the measurement of the shear storage modulus G' belongs to the non-expandable adhesive layer (X1'). The physical property values in the following examples are values measured by the following method.

[質量平均分子量(Mw)] 使用凝膠滲透色層分析裝置(Tosoh股份有限公司製,製品名「HLC-8020」),使用在下述之條件下測定,以標準聚苯乙烯換算所測定之值。 (測定條件) ・管柱:將「TSK guard column HXL-L」「TSK gel G2500HXL」「TSK gel G2000HXL」「TSK gel G1000HXL」(皆Tosoh股份有限公司製)依順序連結而成者 ・管柱溫度:40℃ ・展開溶劑:四氫呋喃 ・流速:1.0mL/min[Mass average molecular weight (Mw)] Measured using a gel permeation chromatograph (manufactured by Tosoh Co., Ltd., product name "HLC-8020") under the following conditions, and the measured value is converted to standard polystyrene. (Measurement conditions) ・Column: "TSK guard column HXL-L", "TSK gel G2500HXL", "TSK gel G2000HXL", "TSK gel G1000HXL" (all manufactured by Tosoh Co., Ltd.) connected in sequence ・Column temperature: 40℃ ・Developing solvent: tetrahydrofuran ・Flow rate: 1.0mL/min

[各層之厚度] 使用股份有限公司TECLOCK製之定壓厚度測定器(型號:「PG-02J」,依循標準規格:JIS K6783、Z1702、Z1709)來測定。[Thickness of each layer] Measured using a constant pressure thickness tester manufactured by TECLOCK Co., Ltd. (model: "PG-02J", in accordance with standard specifications: JIS K6783, Z1702, Z1709).

[熱膨脹性粒子之平均粒徑(D50 )、90%粒徑(D90 )] 使用雷射繞射式粒度分佈測定裝置(例如,Malvern公司製,製品名「Mastersizer 3000」),測定23℃下之膨脹前之熱膨脹性粒子之粒子分佈。 然後,將相當於自粒子分佈之粒徑較小者計算之累積體積頻率為50%及90%的粒徑,分別定為「熱膨脹性粒子之平均粒徑(D50 )」及「熱膨脹性粒子之90%粒徑(D90 )」。[Average particle size (D 50 ) and 90% particle size (D 90 ) of thermally expansive particles] The particle distribution of thermally expansive particles before expansion at 23°C is measured using a laser diffraction particle size distribution measuring device (e.g., manufactured by Malvern, product name “Mastersizer 3000”). Then, the particle sizes corresponding to the 50% and 90% cumulative volume frequencies calculated from the smaller particle size in the particle distribution are defined as the “average particle size (D 50 ) of thermally expansive particles” and the “90% particle size (D 90 ) of thermally expansive particles”, respectively.

[基材(Y)之儲存模數E’] 將裁剪成縱5mm×橫30mm之基材(Y)作為試驗樣本,使用動態黏彈性測定裝置(TA Instruments公司製,製品名「DMAQ800」),以試驗開始溫度0℃、試驗結束溫度200℃、升溫速度3℃/分鐘、振動數1Hz、振幅20μm之條件,測定指定的溫度中之儲存模數E’。[Storage modulus E’ of substrate (Y)] The substrate (Y) cut into 5mm in length and 30mm in width was used as the test sample. The dynamic viscoelasticity measuring device (manufactured by TA Instruments, product name “DMAQ800”) was used to measure the storage modulus E’ at the specified temperature under the conditions of test start temperature 0℃, test end temperature 200℃, heating rate 3℃/min, vibration frequency 1Hz, and amplitude 20μm.

[黏著劑層(X1)之23℃下之剪切儲存模數G’(23)] 將把黏著劑層(X1)做成直徑8mm×厚度3mm者作為試驗樣本,使用黏彈性測定裝置(Anton Paar公司製,裝置名「MCR300」),以試驗開始溫度0℃、試驗結束溫度300℃、升溫速度3℃/分、振動數1Hz之條件,藉由扭轉剪力法,測定23℃下之剪切儲存模數G’(23)。[Shear storage modulus G'(23) of adhesive layer (X1) at 23°C] The adhesive layer (X1) was made into a sample with a diameter of 8mm and a thickness of 3mm as a test sample. The shear storage modulus G'(23) at 23°C was measured by the torsional shear method using a viscoelasticity measuring device (manufactured by Anton Paar, device name "MCR300") with a test start temperature of 0°C, a test end temperature of 300°C, a heating rate of 3°C/min, and a vibration rate of 1Hz.

[非膨脹性黏著劑層(X1’)之剪切儲存模數G’] 為了測定排除熱膨脹性粒子之影響的剪切儲存模數G’,製作各製造例中,除不含熱膨脹性粒子以外,與黏著劑層(X1)具有相同構成之非膨脹性黏著劑層(X1’),作為對應各製造例之黏著劑層(X1)之剪切儲存模數測定用試料,測定其剪切儲存模數G’。 將把非膨脹性黏著劑層(X1’)做成直徑8mm×厚度3mm者作為試驗樣本,使用黏彈性測定裝置(Anton Paar公司製,裝置名「MCR300」),以試驗開始溫度0℃、試驗結束溫度300℃、升溫速度3℃/分、振動數1Hz之條件,藉由扭轉剪力法,測定23℃下之剪切儲存模數G’(23),及熱膨脹性粒子之膨脹開始溫度(t)之剪切儲存模數G’(t)。 此外,所謂剪切儲存模數測定用試料即非膨脹性黏著劑層(X1’)之熱膨脹性粒子之膨脹開始溫度(t),係指對應剪切儲存模數測定用試料之製造例之黏著劑層(X1)中所含之熱膨脹性粒子之膨脹開始溫度(t)的意思,本製造例中,如後述係指88℃。[Shear storage modulus G’ of non-expandable adhesive layer (X1’)] In order to measure the shear storage modulus G’ excluding the influence of thermally expansive particles, a non-expandable adhesive layer (X1’) having the same structure as the adhesive layer (X1) in each manufacturing example except that the thermally expansive particles are not contained was prepared as a sample for measuring the shear storage modulus of the adhesive layer (X1) corresponding to each manufacturing example, and its shear storage modulus G’ was measured. The non-expandable adhesive layer (X1') was made into a diameter of 8mm x thickness of 3mm as a test sample. The viscoelasticity measuring device (made by Anton Paar, device name "MCR300") was used to measure the shear storage modulus G'(23) at 23℃ and the shear storage modulus G'(t) at the expansion start temperature (t) of the thermally expansive particles by the torsional shear method under the conditions of test start temperature 0℃, test end temperature 300℃, temperature rise rate 3℃/min, and vibration frequency 1Hz. The expansion start temperature (t) of the heat-expandable particles in the non-expandable adhesive layer (X1') which is the sample for measuring the shear storage modulus means the expansion start temperature (t) of the heat-expandable particles contained in the adhesive layer (X1) of the manufacturing example corresponding to the sample for measuring the shear storage modulus, and in this manufacturing example, it means 88°C as described later.

合成例1 (胺基甲酸酯丙烯酸酯系預聚物之合成) 混合質量平均分子量(Mw)3,000之聚丙二醇100質量份(固體成分換算值;以下相同)、六亞甲基二異氰酸酯4質量份與二辛基錫二月桂酸酯0.02質量份,於80℃攪拌6小時藉此獲得反應物。關於所得之反應物,藉由紅外分光法測定IR光譜後,確認了異氰酸酯基幾乎消失。 之後,相對於所得之反應物的總量,混合2-異氰酸酯丙烯酸乙酯1質量份,於80℃攪拌3小時,藉此獲得胺基甲酸酯丙烯酸酯系預聚物。關於所得之胺基甲酸酯丙烯酸酯系預聚物,藉由紅外分光法測定IR光譜後,確認了異氰酸酯基幾乎消失。所得之胺基甲酸酯丙烯酸酯系預聚物的質量平均分子量(Mw)為25,000。Synthesis Example 1 (Synthesis of Urethane Acrylate Prepolymer) 100 parts by mass of polypropylene glycol having a mass average molecular weight (Mw) of 3,000 (solid content conversion value; the same below), 4 parts by mass of hexamethylene diisocyanate and 0.02 parts by mass of dioctyltin dilaurate were mixed and stirred at 80°C for 6 hours to obtain a reactant. The IR spectrum of the obtained reactant was measured by infrared spectroscopy, and it was confirmed that the isocyanate group almost disappeared. Thereafter, 1 part by mass of 2-isocyanate ethyl acrylate was mixed with the total amount of the obtained reactant, and stirred at 80°C for 3 hours to obtain a urethane acrylate prepolymer. The IR spectrum of the obtained urethane acrylate prepolymer was measured by infrared spectroscopy, and it was confirmed that the isocyanate group almost disappeared. The mass average molecular weight (Mw) of the obtained urethane acrylate prepolymer was 25,000.

[黏著片之製造] 製造例1~3 (聚合性組成物之製造) 將表1中記載之各成分以表1中記載之摻合組成混合得到無溶劑型聚合性組成物。 此外,表1中記載之各成分的詳細內容如下。 [聚合性乙烯基單體] 2EHA:2-乙基己基丙烯酸酯((a1-1)成分) IBXA:異莰基丙烯酸酯((a1-2)成分) HEA:2-羥基丙烯酸乙酯((a1-3)成分) 4HBA:4-羥基丁基丙烯酸酯((a1-3)成分) [多官能(甲基)丙烯酸酯單體] 3官能單體:異三聚氰酸環氧乙烷改質三丙烯酸酯((a1-4)成分) [多官能(甲基)丙烯酸酯預聚物] 胺基甲酸酯丙烯酸酯系預聚物:於合成例1調製者((a2)成分) 聚丙烯酸基丙烯酸酯系預聚物:「KANEKA XMAP (註冊商標)RC100C」(股份有限公司Kaneka製,於兩末端具有丙烯醯基之聚丙烯酸系預聚物,質量平均分子量(Mw):21,500) ((a2)成分) [光聚合起始劑] 1-羥基環己基苯基酮 [熱膨脹性粒子] AkzoNobel公司製,製品名「Expancel(註冊商標)031-40」(DU類型),膨脹開始溫度(t)=88℃,平均粒徑(D50 )= 12.6μm,90%粒徑(D90 )=26.2μm 此外,表1之「黏著劑層(X1)或非膨脹性黏著劑層(X1’)的組成」中之「-」係指未摻合該成分的意思。[Manufacturing of Adhesive Sheet] Manufacturing Examples 1 to 3 (Manufacturing of Polymerizable Composition) Each component listed in Table 1 was mixed in the blending composition listed in Table 1 to obtain a solvent-free polymerizable composition. In addition, the details of each component listed in Table 1 are as follows. [Polymerizable vinyl monomer] 2EHA: 2-ethylhexyl acrylate (component (a1-1)) IBXA: isoborneol acrylate (component (a1-2)) HEA: 2-hydroxyethyl acrylate (component (a1-3)) 4HBA: 4-hydroxybutyl acrylate (component (a1-3)) [Multifunctional (meth)acrylate monomer] Trifunctional monomer: isocyanurate ethylene oxide modified triacrylate (component (a1-4)) [Multifunctional (meth)acrylate prepolymer] Urethane acrylate prepolymer: prepared in Synthesis Example 1 (component (a2)) Polyacrylic acrylate prepolymer: "KANEKA XMAP (Registered trademark) RC100C" (manufactured by Kaneka Co., Ltd., polyacrylic acid prepolymer having acryloyl groups at both ends, mass average molecular weight (Mw): 21,500) ((a2) component) [Photopolymerization initiator] 1-Hydroxycyclohexyl phenyl ketone [Thermal expansion particles] manufactured by AkzoNobel, product name "Expancel (Registered trademark) 031-40" (DU type), expansion start temperature (t) = 88°C, average particle size (D 50 ) = 12.6μm, 90% particle size (D 90 ) = 26.2μm In addition, "-" in "Composition of adhesive layer (X1) or non-expandable adhesive layer (X1')" in Table 1 means that the component is not mixed.

(黏著片之製作) 使用於上述製造之無溶劑型聚合性組成物,以下述程序製造黏著片。 將無溶劑型聚合性組成物,塗佈於聚對酞酸乙二酯(PET)系剝離薄膜(LINTEC股份有限公司製,製品名「SP-PET382150」,厚度:38μm)之剝離處理面上形成聚合性組成物層。對該聚合性組成物層,以照度150 mW/cm2 、光量100 mJ/cm2 之條件照射紫外線進行預聚合。此外,聚合性組成物層之厚度,以所得之黏著劑層(X1)之厚度成為表2中記載之厚度來調整。 接著,於上述聚合性組成物層之表露出的面上,貼附作為基材(Y)之聚對酞酸乙二酯薄膜(東洋紡股份有限公司製,COSMOSHINE(註冊商標),產品編號「A4300」,厚度:50μm),獲得依序層合剝離薄膜、聚合性組成物層、基材(Y)而成之層合體。此外,基材(Y)之23℃下之儲存模數E’(23)為3.0×109 Pa,基材(Y)之熱膨脹性粒子之膨脹開始溫度(t)中之儲存模數E’(t)為2.4×109 Pa。 對上述所得之層合體,自剝離薄膜側,以照度200 mW/cm2 、光量2,000 mJ/cm2 (500 mJ/cm2 照射4次)之條件照射紫外線形成黏著劑層(X1),獲得依序層合剝離薄膜、黏著劑層(X1)及基材(Y)而成之黏著片。 此外,紫外線照射時之上述照度及光量,係使用照度・光量計(EIT公司製,製品名「UV Power Puck II」)所測定之值。(Preparation of Adhesive Sheet) The solvent-free polymerizable composition prepared above was used to prepare an adhesive sheet in the following procedure. The solvent-free polymerizable composition was applied on the release-treated surface of a polyethylene terephthalate (PET) release film (manufactured by LINTEC Co., Ltd., product name "SP-PET382150", thickness: 38μm) to form a polymerizable composition layer. The polymerizable composition layer was irradiated with ultraviolet light at an illumination of 150 mW/ cm2 and a light quantity of 100 mJ/ cm2 for pre-polymerization. In addition, the thickness of the polymerizable composition layer was adjusted so that the thickness of the obtained adhesive layer (X1) became the thickness described in Table 2. Next, a polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., COSMOSHINE (registered trademark), product number "A4300", thickness: 50 μm) as a substrate (Y) was attached to the exposed surface of the above-mentioned polymerizable composition layer to obtain a laminated body in which a release film, a polymerizable composition layer, and a substrate (Y) were laminated in this order. In addition, the storage modulus E'(23) of the substrate (Y) at 23°C was 3.0×10 9 Pa, and the storage modulus E'(t) of the thermally expandable particles of the substrate (Y) at the expansion starting temperature (t) was 2.4×10 9 Pa. The laminate obtained above was irradiated with ultraviolet light from the release film side at an illumination of 200 mW/cm 2 and a light quantity of 2,000 mJ/cm 2 (500 mJ/cm 2 irradiation 4 times) to form an adhesive layer (X1), and an adhesive sheet was obtained in which the release film, the adhesive layer (X1) and the substrate (Y) were laminated in this order. The illumination and light quantity during ultraviolet irradiation are values measured using an illumination and light quantity meter (manufactured by EIT, product name "UV Power Puck II").

接著針對各例所製作之黏著片進行下述之評估。評估結果表示於表2。The following evaluations were then performed on the adhesive sheets prepared in each example. The evaluation results are shown in Table 2.

[黏著劑層(X1)之熱膨脹前之23℃下之黏著力的測定] 自裁剪成25mm×250mm之黏著片之黏著劑層(X1)去除剝離薄膜,基於JIS Z0237:2000,將表露出之黏著劑層(X1)的表面對矽鏡晶圓之鏡面,以2kg之橡膠輥貼合,其後立刻於23℃、50%RH (相對濕度)之環境下靜置20分鐘。 以上述條件靜置後,於23℃、50%RH (相對濕度)之環境下,使用拉伸試驗機(股份有限公司A&D製,製品名「TENSILON (註冊商標)」),基於JIS Z0237:2000,藉由180˚剝開法,以拉伸速度300mm/分鐘測定黏著力。[Measurement of adhesive force at 23°C before thermal expansion of adhesive layer (X1)] The peeling film was removed from the adhesive layer (X1) cut into an adhesive sheet of 25mm×250mm. Based on JIS Z0237:2000, the exposed surface of the adhesive layer (X1) was bonded to the mirror surface of the silicon mirror wafer with a 2kg rubber roller, and then immediately placed in an environment of 23°C and 50%RH (relative humidity) for 20 minutes. After standing under the above conditions, the adhesion was measured at 23°C and 50% RH (relative humidity) using a tensile tester (manufactured by A&D Co., Ltd., product name "TENSILON (registered trademark)") based on JIS Z0237:2000 by the 180° peeling method at a tensile speed of 300 mm/min.

[黏著劑層(X1)之熱膨脹後之23℃下之黏著力的測定] 又,將上述之試驗樣本,以矽鏡晶圓成為與加熱板接觸之側,黏著片側成為不與加熱板接觸之側之方式載置於加熱板上,以熱膨脹性粒子之膨脹開始溫度以上即100℃加熱1分鐘,於標準環境(23℃、50%RH(相對濕度))靜置60分鐘後,基於JIS Z0237:2000,藉由180˚剝開法,以拉伸速度300mm/分鐘測定黏著劑層(X1)之黏著力。 此外,用以測定而固定黏著片時黏著力過小而不期望地剝離,而難以測定黏著力之情形中,其黏著力定為0N/25mm。[Measurement of Adhesive Strength at 23°C after Thermal Expansion of Adhesive Layer (X1)] The above test sample was placed on a heating plate in such a way that the silicon mirror wafer was in contact with the heating plate and the adhesive sheet was not in contact with the heating plate. It was heated at 100°C, which is above the expansion start temperature of the thermally expandable particles, for 1 minute. After being left in a standard environment (23°C, 50% RH (relative humidity)) for 60 minutes, the adhesive strength of the adhesive layer (X1) was measured at a tensile speed of 300 mm/min by the 180° peeling method based on JIS Z0237:2000. In addition, when the adhesive sheet is fixed for measurement, the adhesive force is too small and it is not expected to be peeled off, making it difficult to measure the adhesive force, and the adhesive force is set to 0N/25mm.

[自我剝離性之評估] 將自裁剪成50mm×50mm之黏著片之黏著劑層(X1)去除剝離薄膜,基於JIS Z0237:2000,將表露出之黏著劑層(X1)的表面對矽鏡晶圓之鏡面,以2kg之橡膠輥貼合,其後立刻於23℃、50%RH(相對濕度)之環境下靜置20分鐘而成者做成試驗樣本。接著,將該試驗樣本,以矽鏡晶圓成為與加熱板接觸之側,黏著片側成為不與加熱板接觸之側之方式載置於加熱板上,以熱膨脹性粒子之膨脹開始溫度以上即100℃最多加熱60秒。求出加熱60秒之時間點中之黏著片的剝離面積之比例(%) (剝離面積×100/黏著片整體之面積),基於以下之基準進行評估。 A:60秒以內黏著片整面剝離者。 B:加熱60秒,剝離之面積為30%以上、未達100%者。 C:加熱60秒,剝離之面積為未達30%者。 又,針對評估「A」者,測定至整面剝離所需要的時間(秒)。[Evaluation of self-peeling property] The peeling film was removed from the adhesive layer (X1) of the adhesive sheet cut into 50mm×50mm. Based on JIS Z0237:2000, the exposed surface of the adhesive layer (X1) was bonded to the mirror surface of the silicon mirror wafer with a 2kg rubber roller. The test sample was then immediately placed in an environment of 23℃ and 50%RH (relative humidity) for 20 minutes. Next, the test sample was placed on the heating plate in such a way that the silicon mirror wafer was in contact with the heating plate and the adhesive sheet was not in contact with the heating plate, and heated at 100°C, which is the expansion start temperature of the thermally expandable particles, for a maximum of 60 seconds. The ratio (%) of the peeled area of the adhesive sheet at the heating time of 60 seconds was calculated (peeled area × 100/the area of the entire adhesive sheet), and evaluated based on the following criteria. A: The entire adhesive sheet was peeled within 60 seconds. B: The peeled area was 30% or more and less than 100% after heating for 60 seconds. C: After heating for 60 seconds, the peeled area is less than 30%. In addition, for those rated "A", the time (seconds) required for the entire surface to be peeled was measured.

由表2可知,製造例1~3之黏著片,皆在加熱剝離前具有充分的黏著力的同時,亦可以低溫(100℃)加熱剝離。又可知,此等之黏著片,藉由調整聚合性組成物之組成及黏著劑層(X1)之厚度等,可調整黏著力及自我剝離性。As shown in Table 2, the adhesive sheets of Manufacturing Examples 1 to 3 all have sufficient adhesive force before heat peeling and can also be heat peeled at a low temperature (100°C). It can also be seen that the adhesive force and self-peeling property of these adhesive sheets can be adjusted by adjusting the composition of the polymerizable composition and the thickness of the adhesive layer (X1).

[半導體裝置之製造] 實施例1 接著,藉由本實施形態之製造方法製造半導體裝置。 此外,半導體裝置之製造方法中使用之兩面黏著片以下述所示方法製作。[Manufacturing of semiconductor device] Example 1 Next, a semiconductor device is manufactured by the manufacturing method of this embodiment. In addition, the double-sided adhesive sheet used in the manufacturing method of the semiconductor device is manufactured by the method shown below.

[兩面黏著片之製作] (1)能量線硬化性黏著劑組成物(x-2)之調製 將丁基丙烯酸酯52質量份、甲基丙烯酸甲酯20質量份,及2-羥基丙烯酸乙酯28質量份,於乙酸乙酯溶劑中進行溶液聚合,獲得非能量線硬化性之丙烯酸系共聚物。將相對於所得之該丙烯酸系共聚物之全羥基數而言,異氰酸酯基數成為0.9當量之量的甲基丙烯醯氧基乙基異氰酸酯,加入含有該丙烯酸系共聚物之溶液中使之反應,生成於側鏈具有能量線聚合性基的能量線硬化性之丙烯酸系共聚物(1) (Mw:100萬)。 然後,相對於此丙烯酸系共聚物(1)之固體成分100質量份而言,摻合作為交聯劑之異氰酸酯系交聯劑(Tosoh股份有限公司製,製品名「Coronate L」) 0.5質量份(固體成分比)及作為光聚合起始劑之1-羥基-環己基-苯基-酮(IGM Resins公司製,製品名「Omnirad 184」) 0.57質量份(固體成分比),調製能量線硬化性黏著劑組成物(x-2)之溶液。[Preparation of double-sided adhesive sheet] (1) Preparation of energy-ray-curable adhesive composition (x-2) 52 parts by mass of butyl acrylate, 20 parts by mass of methyl methacrylate, and 28 parts by mass of ethyl 2-hydroxyacrylate were solution polymerized in ethyl acetate solvent to obtain a non-energy-ray-curable acrylic copolymer. Methacryloyloxyethyl isocyanate in an amount of 0.9 equivalents of isocyanate groups relative to the total number of hydroxyl groups of the obtained acrylic copolymer was added to the solution containing the acrylic copolymer and reacted to generate an energy-ray-curable acrylic copolymer (1) (Mw: 1 million) having energy-ray-polymerizable groups in the side chains. Then, with respect to 100 parts by mass of the solid content of this acrylic copolymer (1), 0.5 parts by mass (solid content ratio) of an isocyanate crosslinking agent (manufactured by Tosoh Co., Ltd., product name "Coronate L") as a crosslinking agent and 0.57 parts by mass (solid content ratio) of 1-hydroxy-cyclohexyl-phenyl-ketone (manufactured by IGM Resins, product name "Omnirad 184") as a photopolymerization initiator were mixed to prepare a solution of an energy ray-curable adhesive composition (x-2).

(2)兩面黏著片之製造 準備製造例1所製作之依序層合剝離薄膜、黏著劑層(X1)及基材(Y)而成之黏著片作為黏著片(1)。 另一方面,將上述所調製之能量線硬化性黏著劑組成物(x-2),塗佈於聚對酞酸乙二酯(PET)系剝離薄膜(LINTEC股份有限公司製,製品名「SP-PET381031」,厚度:38μm)之剝離處理面上,於100℃乾燥1分鐘,於剝離薄膜上,形成黏著劑層(X2) (厚度:20μm)。 然後,將該黏著劑層(X2)與上述黏著片(1)之基材(Y)貼合,得到依序層合剝離薄膜、黏著劑層(X1)、基材(Y)、黏著劑層(X2)及剝離薄膜而成的兩面黏著片。(2) Production of double-sided adhesive sheet An adhesive sheet prepared in Example 1 by laminating the release film, adhesive layer (X1) and substrate (Y) in sequence is prepared as adhesive sheet (1). On the other hand, the energy ray-curable adhesive composition (x-2) prepared above is applied on the release-treated surface of a polyethylene terephthalate (PET) release film (manufactured by LINTEC Co., Ltd., product name "SP-PET381031", thickness: 38μm), dried at 100°C for 1 minute, and an adhesive layer (X2) (thickness: 20μm) is formed on the release film. Then, the adhesive layer (X2) is laminated to the substrate (Y) of the adhesive sheet (1) to obtain a double-sided adhesive sheet in which a release film, an adhesive layer (X1), a substrate (Y), an adhesive layer (X2) and a release film are laminated in sequence.

[半導體裝置之製造] (步驟1) 使用背面研磨用膠帶貼合機(LINTEC股份有限公司製,裝置名「RAD-3510F/12」),於常溫(25℃)之台上,將上述所製作之兩面黏著片之黏著劑層(X2)去除剝離薄膜而成者,以黏著劑層(X2)與晶圓之電路面相接之方式,層合在直徑12英吋、厚度730μm,具有形成有圖型之電路面的晶圓之電路面上。 另一方面,將支撐體即鏡晶圓(直徑12英吋、厚度750μm)貼附於自兩面黏著片之黏著劑層(X1)去除剝離薄膜表露出之黏著劑層(X1),得到依序層合支撐體、兩面黏著片及晶圓而成之層合體。[Manufacturing of semiconductor devices] (Step 1) Using a back grinding tape laminating machine (manufactured by LINTEC Co., Ltd., device name "RAD-3510F/12"), on a table at room temperature (25°C), the adhesive layer (X2) of the double-sided adhesive sheet prepared above is removed by removing the peeling film, and laminated on the electrical path surface of a wafer having a patterned electrical path surface with the adhesive layer (X2) being in contact with the electrical path surface of the wafer. On the other hand, the support body, i.e., the mirror wafer (diameter 12 inches, thickness 750 μm) is attached to the adhesive layer (X1) exposed by removing the peeling film from the adhesive layer (X1) of the double-sided adhesive sheet, to obtain a laminated body in which the support body, the double-sided adhesive sheet and the wafer are laminated in sequence.

(步驟2) 接著,使用隱形雷射照射裝置(股份有限公司DISCO製,裝置名「DFL7361」),與晶圓之電路形成面相反側的背面進行隱形雷射照射,於晶圓內部形成改質區域。然後,使用研磨機/拋光機(股份有限公司DISCO製,裝置名「DGP8761」),自晶圓的該背面,暴露於超純水同時進行研削並同時進行晶片的個片化,得到厚度20μm之晶片。此外,充分地抑制此等加工時,因兩面黏著片與支撐體之密著性不足所致之加工對象物的振動及位置偏移。(Step 2) Next, an invisible laser irradiation device (manufactured by DISCO Co., Ltd., device name "DFL7361") is used to perform invisible laser irradiation on the back side of the wafer opposite to the circuit formation surface, forming a modified area inside the wafer. Then, a grinder/polisher (manufactured by DISCO Co., Ltd., device name "DGP8761") is used to grind and separate the wafers from the back side of the wafer while exposing it to ultrapure water, thereby obtaining a wafer with a thickness of 20μm. In addition, during such processing, vibration and positional deviation of the object to be processed due to insufficient adhesion between the double-sided adhesive sheet and the support body are fully suppressed.

(步驟3) 接下來,使用貼合機(LINTEC股份有限公司製,製品名「RAD2700」)以50℃之條件,以晶片之背面與晶片黏結薄膜相接之方式,將附有支持片之晶片黏結薄膜(LINTEC股份有限公司製,製品名「Adwill LD01D-7」)貼附於經個片化之晶片的背面側,得到依序具有支撐體、黏著片、晶片、晶片黏結薄膜及支持片之層合體。(Step 3) Next, a chip adhesive film (manufactured by LINTEC Co., Ltd., product name "Adwill LD01D-7") with a support sheet attached is attached to the back side of the individualized chip using a bonding machine (manufactured by LINTEC Co., Ltd., product name "RAD2700") at 50°C, with the back side of the chip in contact with the chip adhesive film, to obtain a laminate having a support body, an adhesive sheet, a chip, a chip adhesive film, and a support sheet in order.

(步驟4) 以支撐體側成為與加熱板之接觸側之方式,將上述之層合體載置於加熱板上,以熱膨脹性粒子之膨脹開始溫度以上即100℃加熱1分鐘,分離黏著片之黏著劑層(X1)與支撐體。 此外,加熱後之黏著劑層(X1)與支撐體之密著性,降低至若將支撐體朝上側,貼附有晶片之黏著片朝下側,貼附有晶片之黏著片因其重量落下的程度。(Step 4) The above-mentioned laminate is placed on the heating plate in such a manner that the support body side becomes the contact side with the heating plate, and is heated for 1 minute at 100°C, which is above the expansion start temperature of the thermally expandable particles, to separate the adhesive layer (X1) of the adhesive sheet from the support body. In addition, the adhesion between the heated adhesive layer (X1) and the support body is reduced to the extent that if the support body is facing upward and the adhesive sheet with the chip attached is facing downward, the adhesive sheet with the chip attached will fall due to its weight.

(步驟5) 接著,自與支撐體分離而露出之黏著片的黏著劑層(X1)側,以照度230 mW/cm2 、光量380 mJ/cm2 之條件照射紫外線,使黏著劑層(X2)硬化,藉此使密著性降低,而分離黏著劑層(X2)與晶片。以目視確認與黏著劑層(X2)分離之晶片的表面,確認沒有污染及殘膠。 將晶片黏結薄膜分割成與晶片相同形狀後,去除支持片,得到經個片化之附有晶片黏結薄膜的晶片。使用黏晶機自晶片黏結薄膜側,將該附有晶片黏結薄膜之晶片貼附於基板,使晶片黏結薄膜熱硬化,藉此將晶片與基板固著,得到半導體裝置。(Step 5) Next, the adhesive layer (X1) side of the adhesive sheet separated from the support and exposed is irradiated with ultraviolet light at an illumination of 230 mW/ cm2 and a light quantity of 380 mJ/ cm2 to harden the adhesive layer (X2), thereby reducing the adhesion and separating the adhesive layer (X2) from the chip. The surface of the chip separated from the adhesive layer (X2) is visually checked to confirm that there is no contamination or residual adhesive. After the chip adhesive film is divided into the same shape as the chip, the support sheet is removed to obtain individual chips with chip adhesive films attached. A die bonding machine is used to attach the die with the die bonding film to the substrate from the die bonding film side, and the die bonding film is thermally cured to fix the die and the substrate to obtain a semiconductor device.

如上述,可知本發明之一態樣的半導體裝置之製造方法,加工對象物之加工性及生產性優異,沒有因熱膨脹性粒子及經膨脹之黏著劑層而加工對象物被污染之事。As described above, it can be seen that the method for manufacturing a semiconductor device according to one aspect of the present invention has excellent processability and productivity of the object to be processed, and there is no contamination of the object to be processed by the thermally expandable particles and the expanded adhesive layer.

1a,1b:黏著片 10a,10b:剝離材 2:支撐體 3:雷射光照射裝置 4:改質區域 5:磨床 6:熱硬化性薄膜 7:支持片 W:半導體晶圓 W1:半導體晶圓及半導體晶片之電路面 W2:半導體晶圓及半導體晶片之背面 CP:半導體晶片 (X1):黏著劑層(X1) (X2):黏著劑層(X2) (Y):基材(Y)1a, 1b: Adhesive sheet 10a, 10b: Peeling material 2: Support body 3: Laser irradiation device 4: Modified area 5: Grinding machine 6: Thermosetting film 7: Support sheet W: Semiconductor wafer W1: Surface of semiconductor wafer and semiconductor chip W2: Back of semiconductor wafer and semiconductor chip CP: Semiconductor chip (X1): Adhesive layer (X1) (X2): Adhesive layer (X2) (Y): Substrate (Y)

[圖1]顯示本發明之黏著片的構成之一例的剖面圖。 [圖2]說明本發明之半導體裝置之製造方法的步驟之一例的剖面圖。 [圖3]說明本發明之半導體裝置之製造方法的步驟之一例的剖面圖。 [圖4]說明本發明之半導體裝置之製造方法的步驟之一例的剖面圖。 [圖5]說明本發明之半導體裝置之製造方法的步驟之一例的剖面圖。 [圖6]說明本發明之半導體裝置之製造方法的步驟之一例的剖面圖。 [圖7]說明本發明之半導體裝置之製造方法的步驟之一例的剖面圖。 [圖8]說明本發明之半導體裝置之製造方法的步驟之一例的剖面圖。[FIG. 1] A cross-sectional view showing an example of the structure of the adhesive sheet of the present invention. [FIG. 2] A cross-sectional view illustrating an example of the steps of the method for manufacturing a semiconductor device of the present invention. [FIG. 3] A cross-sectional view illustrating an example of the steps of the method for manufacturing a semiconductor device of the present invention. [FIG. 4] A cross-sectional view illustrating an example of the steps of the method for manufacturing a semiconductor device of the present invention. [FIG. 5] A cross-sectional view illustrating an example of the steps of the method for manufacturing a semiconductor device of the present invention. [FIG. 6] A cross-sectional view illustrating an example of the steps of the method for manufacturing a semiconductor device of the present invention. [FIG. 7] A cross-sectional view illustrating an example of the steps of the method for manufacturing a semiconductor device of the present invention. [Fig. 8] A cross-sectional view illustrating an example of the steps of the method for manufacturing a semiconductor device of the present invention.

1a,1b:黏著片 1a,1b: Adhesive sheet

10a,10b:剝離材 10a,10b: Stripping material

(X1):黏著劑層(X1) (X1): Adhesive layer (X1)

(X2):黏著劑層(X2) (X2): Adhesive layer (X2)

(Y):基材(Y) (Y): Base material (Y)

Claims (10)

一種半導體裝置之製造方法,其係使用黏著片的半導體裝置之製造方法,該黏著片依序具有含有熱膨脹性粒子之黏著劑層(X1)、基材(Y)與藉由照射能量線進行硬化而黏著力降低之黏著劑層(X2),該製造方法包含下述步驟1~5,前述熱膨脹性粒子之膨脹開始溫度(t)為50~100℃;步驟1:將加工對象物貼附於前述黏著片具有之黏著劑層(X2),將支撐體貼附於前述黏著片具有之黏著劑層(X1)的步驟;步驟2:對前述加工對象物施行選自研削處理及個片化處理中之1種以上之加工處理的步驟;步驟3:於經施行前述加工處理之加工對象物的與黏著劑層(X2)相反側之面,貼附熱硬化性薄膜的步驟;步驟4:將前述黏著片加熱至前述熱膨脹性粒子之膨脹開始溫度(t)以上且110℃以下,分離黏著劑層(X1)與前述支撐體的步驟;步驟5:對黏著劑層(X2)照射能量線,分離黏著劑層(X2)與前述加工對象物的步驟。 A method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using an adhesive sheet, wherein the adhesive sheet sequentially comprises an adhesive layer (X1) containing thermally expandable particles, a substrate (Y), and an adhesive layer (X2) whose adhesive force is reduced by curing by irradiating energy rays, and the manufacturing method comprises the following steps 1 to 5, wherein the thermally expandable particles have an expansion starting temperature (t) of 50 to 100° C. Step 1: attaching a processing object to the adhesive layer (X2) of the adhesive sheet, and attaching a support to the adhesive layer (X1) of the adhesive sheet; Step 2: performing one or more processing selected from grinding and slicing on the aforementioned processing object; Step 3: attaching a thermosetting film to the surface of the processing object on the opposite side of the adhesive layer (X2) after the aforementioned processing; Step 4: heating the aforementioned adhesive sheet to a temperature above the expansion start temperature (t) of the aforementioned thermally expandable particles and below 110°C, and separating the adhesive layer (X1) from the aforementioned support; Step 5: irradiating the adhesive layer (X2) with energy rays, and separating the adhesive layer (X2) from the aforementioned processing object. 如請求項1之半導體裝置之製造方法,其中前述加工處理係以隱形切割法進行之個片化處理、以刀片預切割法進行之研削處理及個片化處理,或以隱形預切割法進行之研削處理及個片化處理。 A method for manufacturing a semiconductor device as claimed in claim 1, wherein the aforementioned processing is individualization processing by invisible cutting method, grinding processing and individualization processing by blade pre-cutting method, or grinding processing and individualization processing by invisible pre-cutting method. 如請求項1或2之半導體裝置之製造方 法,其中前述加工處理係以隱形預切割法進行之研削處理及個片化處理。 A method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein the aforementioned processing is grinding processing and individual wafer processing performed by invisible pre-cutting method. 如請求項1或2之半導體裝置之製造方法,其中前述熱膨脹性粒子之含量,相對於黏著劑層(X1)之總質量(100質量%)而言,為1~30質量%。 A method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein the content of the aforementioned thermally expandable particles is 1 to 30 mass % relative to the total mass (100 mass %) of the adhesive layer (X1). 如請求項1或2之半導體裝置之製造方法,其中前述熱膨脹性粒子之23℃下之平均粒徑(D50)為1~30μm。 The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the average particle size (D 50 ) of the thermally expandable particles at 23° C. is 1 to 30 μm. 如請求項1或2之半導體裝置之製造方法,其中基材(Y)之23℃下之儲存模數E’(23)為5.0×107~5.0×109Pa。 The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the storage modulus E'(23) of the substrate (Y) at 23°C is 5.0×10 7 ~5.0×10 9 Pa. 如請求項1或2之半導體裝置之製造方法,其中前述加工對象物為半導體晶圓。 A method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein the object to be processed is a semiconductor wafer. 如請求項1或2之半導體裝置之製造方法,其中前述能量線為紫外線。 A method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein the energy rays are ultraviolet rays. 如請求項1或2之半導體裝置之製造方法,其中前述步驟4中,由前述支撐體側加熱前述黏著片。 A method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein in the aforementioned step 4, the aforementioned adhesive sheet is heated from the aforementioned support body side. 如請求項1或2之半導體裝置之製造方法,其中前述步驟4中,以加熱板加熱前述黏著片之支撐體側。A method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein in the aforementioned step 4, a heating plate is used to heat the supporting body side of the aforementioned adhesive sheet.
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