TWI869113B - Method and system for detecting surface condition of loading platform - Google Patents
Method and system for detecting surface condition of loading platform Download PDFInfo
- Publication number
- TWI869113B TWI869113B TW112148710A TW112148710A TWI869113B TW I869113 B TWI869113 B TW I869113B TW 112148710 A TW112148710 A TW 112148710A TW 112148710 A TW112148710 A TW 112148710A TW I869113 B TWI869113 B TW I869113B
- Authority
- TW
- Taiwan
- Prior art keywords
- processor
- carrier platform
- profile data
- detection plate
- state
- Prior art date
Links
Images
Landscapes
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
本發明是有關於一種表面狀態檢測方法,特別是指一種應用於半導體量測或檢測設備的載物平台表面狀態檢測方法。The present invention relates to a surface state detection method, and in particular to a surface state detection method for a carrier platform used in semiconductor measurement or detection equipment.
半導體量測或檢測設備包含一載物平台(chuck),用以承載一待測物,例如晶圓。當該載物平台表面沾黏有灰塵或前一待測物留下的碎片等微粒時,若將該待測物直接放置於該載物平台,由於該待測物與該載物平台之間存在有前述灰塵或碎片等微粒,將可能發生該待測物的量測或檢測結果有誤差,或是該待測物具有被前述灰塵或碎片等微粒損壞的風險。因此,在對該待測物進行量測或檢測之前,確保該載物平台表面潔淨確實是一值得研究的課題。Semiconductor measurement or testing equipment includes a chuck for carrying an object to be tested, such as a wafer. When the surface of the chuck is stained with dust or particles such as debris left by the previous object to be tested, if the object to be tested is placed directly on the chuck, due to the presence of the dust or debris particles between the object to be tested and the chuck, the measurement or test results of the object to be tested may be erroneous, or the object to be tested may be damaged by the dust or debris particles. Therefore, before measuring or testing the object to be tested, ensuring that the surface of the chuck is clean is indeed a topic worth studying.
因此,本發明之目的,即在提供一種載物平台表面狀態檢測方法及實現該方法的一種載物平台表面狀態檢測系統,其能有效地檢測出半導體量測或檢測設備之載物平台表面沾黏的微粒。Therefore, the purpose of the present invention is to provide a method for detecting the surface state of a carrier platform and a system for detecting the surface state of a carrier platform for implementing the method, which can effectively detect particles adhering to the surface of the carrier platform of a semiconductor measurement or detection device.
於是,本發明一種載物平台表面狀態檢測方法,包括:一處理器取得一基準表面輪廓數據,該基準表面輪廓數據包含與一載物平台表面的多個取樣點對應的多個第一距離;該載物平台表面吸附一檢測板材;該處理器控制一非接觸式高度量測器掃描該載物平台表面吸附的該檢測板材並量測其與該檢測板材在各該取樣點的一第二距離;該處理器根據該非接觸式高度量測器提供的該等第二距離產生包含該等取樣點及其對應的該第二距離的一待測表面輪廓數據;及該處理器根據該基準表面輪廓數據包含的該等取樣點對應的該第一距離與該待測表面輪廓數據包含的該等取樣點對應的該第二距離之間的差距,判斷該載物平台表面是否存在微粒並產生一檢測結果。Therefore, the present invention provides a method for detecting the surface state of a loading platform, comprising: a processor obtaining a reference surface profile data, the reference surface profile data including a plurality of first distances corresponding to a plurality of sampling points on the surface of a loading platform; the surface of the loading platform adsorbs a detection plate; the processor controls a non-contact height measuring device to scan the detection plate adsorbed on the surface of the loading platform and measure a second distance between the detection plate and the detection plate at each sampling point. The processor generates a surface profile data to be measured including the sampling points and the second distances corresponding to the sampling points according to the second distances provided by the non-contact height measuring device; and the processor determines whether there are particles on the surface of the loading platform and generates a detection result according to the difference between the first distances corresponding to the sampling points included in the reference surface profile data and the second distances corresponding to the sampling points included in the surface profile data to be measured.
再者,本發明實現上述方法的一種載物平台表面狀態檢測系統,包括一處理器、一檢測板材及一非接觸式高度量測器;該處理器取得一基準表面輪廓數據,該基準表面輪廓數據包含與一載物平台表面的多個取樣點對應的多個第一距離;該檢測板材被該載物平台表面吸附;該非接觸式高度量測器與該處理器電連接並受該處理器控制;其中,該處理器控制該非接觸式高度量測器掃描該載物平台表面吸附的該檢測板材並量測其與該檢測板材在各該取樣點的一第二距離;該處理器根據該非接觸式高度量測器提供的該等第二距離產生包含該等取樣點及其對應的該第二距離的一待測表面輪廓數據;該處理器根據該基準表面輪廓數據包含的該等取樣點對應的該第一距離與該待測表面輪廓數據包含的該等取樣點對應的該第二距離之間的差距,判斷該載物平台表面是否存在微粒並產生一檢測結果。Furthermore, the present invention implements the above-mentioned method in a platform surface state detection system, comprising a processor, a detection plate and a non-contact height measuring device; the processor obtains a reference surface profile data, the reference surface profile data including a plurality of first distances corresponding to a plurality of sampling points on a platform surface; the detection plate is adsorbed by the platform surface; the non-contact height measuring device is electrically connected to the processor and controlled by the processor; wherein the processor controls the non-contact height measuring device to scan the platform surface The detection plate adsorbed on the surface is measured to measure a second distance between the detection plate and the detection plate at each sampling point; the processor generates a surface profile data to be detected including the sampling points and the second distances corresponding to the sampling points according to the second distances provided by the non-contact height measuring device; the processor determines whether there are particles on the surface of the carrier platform and generates a detection result according to the difference between the first distances corresponding to the sampling points included in the reference surface profile data and the second distances corresponding to the sampling points included in the surface profile data to be detected.
在本發明的一些實施態樣中,該處理器判斷該基準表面輪廓數據與該待測表面輪廓數據中相對應的一取樣點對應的該第一距離與該第二距離之間的差距大於一臨界值時,該處理器判定該載物平台表面在該取樣點處存在微粒。In some embodiments of the present invention, when the processor determines that the difference between the first distance and the second distance corresponding to a sampling point corresponding to the benchmark surface profile data and the measured surface profile data is greater than a critical value, the processor determines that there are particles on the surface of the carrier platform at the sampling point.
在本發明的一些實施態樣中,該載物平台放置在一移動載具上,該移動載具被該處理器控制而按照一預設移動路徑帶動該載物平台相對該非接觸式高度量測器移動的同時,該處理器控制該非接觸式高度量測器掃描並量測其與該檢測板材在各該取樣點的該第二距離。In some embodiments of the present invention, the carrier platform is placed on a mobile carrier, and the mobile carrier is controlled by the processor to move the carrier platform relative to the non-contact height meter according to a preset moving path. At the same time, the processor controls the non-contact height meter to scan and measure the second distance between it and the detection plate at each sampling point.
在本發明的一些實施態樣中,該基準表面輪廓數據包含的該等第一距離是該處理器控制該非接觸式高度量測器掃描被具有一基準狀態或一既定狀態的該載物平台表面吸附的該檢測板材並量測其與該檢測板材在各該取樣點的距離而產生,其中該基準狀態是指該載物平台表面沒有存在微粒的狀態,該既定狀態是指該載物平台表面沒有存在微粒的狀態或該載物平台表面存在一些無法消除的微粒的狀態。In some embodiments of the present invention, the first distances included in the reference surface profile data are generated by the processor controlling the non-contact height meter to scan the detection plate adsorbed by the surface of the carrier platform having a reference state or a predetermined state and measuring the distance between it and the detection plate at each sampling point, wherein the reference state refers to a state in which there are no particles on the surface of the carrier platform, and the predetermined state refers to a state in which there are no particles on the surface of the carrier platform or a state in which there are some particles on the surface of the carrier platform that cannot be eliminated.
在本發明的一些實施態樣中,該非接觸式高度量測器是彩色共焦位移感測器、雷射位移計、電容式位移計或原子力顯微鏡。In some embodiments of the present invention, the non-contact height measurement device is a chromatic confocal displacement sensor, a laser displacement meter, a capacitive displacement meter or an atomic force microscope.
本發明之功效在於:藉由該載物平台表面吸附該檢測板材,再對該檢測板材表面進行掃描及高度(輪廓)量測,能夠提高該載物平台表面微粒的檢出能力。The effect of the present invention is that the detection capability of particles on the surface of the loading platform can be improved by adsorbing the detection plate on the surface of the loading platform and then scanning and measuring the height (profile) of the surface of the detection plate.
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that similar components are represented by the same reference numerals in the following description.
參閱圖1,是本發明載物平台表面狀態檢測方法的一實施例的主要流程步驟,且本實施例是由圖2所示的載物平台表面狀態檢測系統實現,其主要包括一檢測板材1、一處理器2及一受該處理器2控制的非接觸式高度量測器3。Referring to FIG. 1 , it is the main process steps of an embodiment of the method for detecting the surface state of a loading platform of the present invention, and this embodiment is implemented by the surface state detection system of the loading platform shown in FIG. 2 , which mainly includes a detection plate 1, a
如圖2和圖3所示,該檢測板材1用以放置在一半導體量測或檢測設備4的一供一待測物(例如但不限於晶圓)放置的載物平台41表面上且被該載物平台41表面緊密吸附,緊密吸附的方式例如該載物平台41表面設有複數氣孔(圖未示),該半導體量測或檢測設備4對該等氣孔施加負壓即能將該檢測板材1吸附使其緊密貼合在該載物平台41表面上,而這也是該載物平台41將該待測物吸附在其表面的方式。As shown in Figures 2 and 3, the detection plate 1 is used to be placed on the surface of a
該檢測板材1是與該待測物相同尺寸之除了薄膜以外的板材,例如但不限於祼晶圓(bare wafer)。The detection plate 1 is a plate having the same size as the object to be detected except for a film, such as but not limited to a bare wafer.
如圖2所示,該處理器2是設置在該半導體量測或檢測設備4並控制該半導體量測或檢測設備4運作的一電腦的一中央處理單元、一微處理器或一微控制器等,且該處理器2與該半導體量測或檢測設備4之承載該載物平台41的一移動載具42電連接,以控制該移動載具42在一預設範圍內移動該載物平台41,以對放置在該載物平台41表面上的該待測物進行量測或檢測。As shown in FIG. 2 , the
如圖2所示,該非接觸式高度量測器3設置在該半導體量測或檢測設備4並位於該載物平台41的上方,且該非接觸式高度量測器3與該處理器2電連接並受該處理器2控制而作動。該非接觸式高度量測器3可以是但不限於彩色共焦位移感測器、雷射位移計、電容式位移計或原子力顯微鏡(AFM)。As shown in FIG. 2 , the non-contact
且當該半導體量測或檢測設備4出廠後由業者端用以進行量測或檢測該待測物達到一段時間(例如1個月、3個月或半年等)後,可能會有微粒,例如灰塵或之前檢測的該待測物的碎片等沾黏在該載物平台41表面上;所以,每隔一段時間(例如1個月、3個月或半年等),在對該待測物進行量測或檢測之前,應先檢測該載物平台41表面是否存在微粒,以及時清除該載物平台41表面上的微粒。Moreover, when the semiconductor measuring or testing device 4 is used by the industry to measure or test the object to be tested for a period of time (e.g., 1 month, 3 months, or half a year, etc.) after leaving the factory, particles, such as dust or fragments of the object to be tested previously tested, may adhere to the surface of the
因此,為檢測出該載物平台41表面上的微粒,如圖1的步驟S1,首先,該處理器2取得一基準表面輪廓數據,該基準表面輪廓數據包含與該載物平台41表面的多個取樣點對應的多個第一距離。Therefore, in order to detect the particles on the surface of the
該基準表面輪廓數據可以是該半導體量測或檢測設備4出廠(或出貨)時由廠商產生並提供,例如在廠商端,由該處理器2控制該非接觸式高度量測器3掃描被具有一基準狀態的該載物平台41表面吸附的該檢測板材1並量測其(該非接觸式高度量測器3)與該檢測板材1在各該取樣點的距離而產生與該等取樣點對應的該等第一距離;該基準狀態可以是指該載物平台41表面沒有存在微粒的狀態,且該檢測板材1在完成上述取樣動作且經過清潔後被放回一收納盒(圖未示)中。The reference surface profile data may be generated and provided by the manufacturer when the semiconductor measurement or detection device 4 leaves the factory (or is shipped). For example, at the manufacturer's end, the
或者,該基準表面輪廓數據也可以是使用者端(業者端)的該半導體量測或檢測設備4在前一次(或之前)對該待測物進行量測或檢測之前所產生,例如由該處理器2控制該非接觸式高度量測器3掃描被具有一既定狀態的該載物平台41表面吸附的該檢測板材1並量測其(該非接觸式高度量測器3)與該檢測板材1在各該取樣點的距離而產生與該等取樣點對應的該等第一距離。該既定狀態可以是上述的該基準狀態(該載物平台41表面沒有存在微粒的狀態)或者該載物平台41表面存在一些無法消除的微粒的狀態,且該檢測板材1在完成上述取樣動作且經過清潔後被放回該收納盒中。Alternatively, the reference surface profile data may also be generated by the semiconductor measuring or testing device 4 at the user end (industry end) before the last (or before) measurement or testing of the object to be tested, for example, the
具體而言,在取得該等第一距離的過程中,該處理器2會控制該移動載具42按照一預設移動路徑帶動該載物平台41相對該非接觸式高度量測器3移動,同時該處理器2控制該非接觸式高度量測器3以預設的一取樣頻率掃描並量測其與該載物平台41表面吸附的該檢測板材1表面在各該取樣點的距離,例如該處理器2預計要在該檢測板材1表面平均分佈的M(行)xN(列)個取樣點取得該第一距離,則當該載物平台41表面吸附的該檢測板材1表面第1行的N個取樣點被移動到該非接觸式高度量測器3的量測探頭(圖未示)的正下方時,該處理器2令該非接觸式高度量測器3掃描(單點逐點掃描或同時多點掃描)並量測該檢測板材1表面第1行的該N個取樣點分別與量測探頭之間的該第一距離,接著,當該載物平台41表面吸附的該檢測板材1表面第2行的N個取樣點被移動到該非接觸式高度量測器3的量測探頭(圖未示)的正下方時,該處理器2令該非接觸式高度量測器3掃描並量測該檢測板材1表面第2行的該N個取樣點分別與量測探頭之間的該第一距離。Specifically, in the process of obtaining the first distances, the
例如圖3所示,其中顯示該非接觸式高度量測器3掃描被該載物平台41表面吸附的該檢測板材1表面某一行的連續多個取樣點時,量測到其與每一取樣點對應的該第一距離。圖3中的橫向箭頭表示該非接觸式高度量測器3的掃描方向。For example, as shown in FIG3 , the non-contact
藉此該非接觸式高度量測器3將逐行掃描並量測該檢測板材1表面上第3~M行的N個取樣點與其之間的該第一距離,而獲得該等取樣點(即MxN個取樣點)對應的該第一距離。Thereby, the non-contact
因此,該基準表面輪廓數據可以呈現出被具有該基準狀態或該既定狀態的該載物平台41表面吸附的該檢測板材1表面的高度變化(也是該載物平台41表面的高度變化),例如圖3所示。Therefore, the reference surface profile data can present the height variation of the surface of the detection plate 1 adsorbed by the surface of the
然後,執行圖1的步驟S2,令待測的該載物平台41表面吸附該檢測板材1,該檢測板材1是由該半導體量測或檢測設備4的一取物機構(例如機器手臂)從該收納盒中取出並放置在該載物平台41上。Then, execute step S2 of FIG. 1 to allow the surface of the
接著,如圖1的步驟S3,該處理器2控制該移動載具42按照上述的該預設移動路徑帶動該載物平台41相對該非接觸式高度量測器3移動,同時,該處理器2控制該非接觸式高度量測器3掃描並量測其與被該載物平台41表面吸附的該檢測板材1在各該取樣點(即上述的MxN個取樣點)之間的一第二距離,並提供該等取樣點(即MxN個取樣點)對應的該第二距離給該處理器2。Next, as shown in step S3 of FIG. 1 , the
以圖4所示為例,圖4顯示該非接觸式高度量測器3掃描並量測被該載物平台41表面吸附的該檢測板材1表面在某一行連續的多個取樣點(例如與圖3所示同一行的該些連續的取樣點)時,當該載物平台41表面上某些微粒(例如圖4中的第1顆和第3顆微粒)並未落在取樣點上但是落在取樣點旁邊或附近時,該檢測板材1會將該些微粒放大,使該些微粒的範圍擴大並延伸到落入旁邊或附近的取樣點,而使在該些微粒旁邊或附近的該些取樣點被該非接觸式高度量測器3掃描並量測相對應的該第二距離時,該些第二距離能反應或突顯出落在取樣點旁邊或附近的該些微粒的存在,如圖4所示。Taking FIG. 4 as an example, FIG. 4 shows that when the non-contact
值得一提的是,為了使檢測過程所花的時間在合理範圍內而不致耗費過多的檢測時間,該非接觸式高度量測器3的該取樣(掃描)頻率和掃描間距(相鄰兩個取樣點的間距)需要被合理地規劃,因此該取樣頻率不可能調得過高且掃描間距也不能縮到很小,在此情況下,就會出現該非接觸式高度量測器3的某些取樣點剛好未落在該載物平台41表面的某些微粒存在的位置,但本實施例藉由被該載物平台41表面吸附的該該檢測板材1能將該些微粒放大,使該些微粒的範圍可以延伸到落入旁邊或附近的取樣點而能被該非接觸式高度量測器3取樣到。It is worth mentioning that, in order to make the time spent on the detection process within a reasonable range and not consume too much detection time, the sampling (scanning) frequency and scanning interval (the distance between two adjacent sampling points) of the non-contact
然後,如圖1的步驟S4,該處理器2接收該非接觸式高度量測器3傳來的該等第二距離後,基於該等取樣點的座標和該等取樣點(即MxN個取樣點)對應的該第二距離,產生包含該等取樣點(座標)及其對應的該第二距離的一待測表面輪廓數據,該待測表面輪廓數據呈現出被該載物平台41表面吸附的該檢測板材1表面的高度變化(也是待測的該載物平台41表面高度變化),例如圖4所示。Then, as shown in step S4 of FIG. 1 , after the
接著,如圖1的步驟S5,該處理器2根據該基準表面數據包含的該等取樣點對應的該第一距離與該待測表面輪廓數據包含的該等取樣點對應的該第二距離之間的差距,判斷該載物平台41表面是否存在微粒並產生一檢測結果。Next, as shown in step S5 of FIG. 1 , the
具體而言,例如圖5所示,該處理器2以該待測表面輪廓數據包含的該等取樣點(例如圖3所示某一行的該些連續的取樣點)對應的該第二距離減去該基準表面數據包含的該等取樣點(例如圖4所示之與圖3所示同一行的該些連續的取樣點)對應的該第一距離,即會得到如圖5所示之包含該等取樣點及其對應的一差距的一表面輪廓差異數據。然後,該處理器2判斷該表面輪廓差異數據中某一或某些取樣點對應的該差距是否大於一臨界值(圖5中的虛線),若是,即判定該載物平台41表面在該或該些取樣點處(例如圖5中被圈選的4個取樣點)存在微粒(例如圖5中示意的3個大黑點),並產生該檢測結果,該檢測結果顯示該載物平台41表面存在微粒而需要被清潔。且該檢測板材1在完成上述檢測動作且經過清潔後被放回該收納盒中。Specifically, as shown in FIG5 , for example, the
另外,為了證明本實施例具有較佳的微粒檢出能力,如圖6所示,同樣以上述方法取得包含該等取樣點(座標)及其對應的該第三距離的另一基準表面輪廓數據,該等第三距離是以該非接觸式高度量測器3對沒有吸附該檢測板材1之具有該基準狀態或該既定狀態的該載物平台41表面掃描如同上述的該等取樣點並量測其與各該取樣點之間的距離而產生,如圖6所示(圖6顯示與圖3所示同一行的連續多個取樣點的該第三距離);然後,如圖7,以該非接觸式高度量測器3對沒有吸附該檢測板材1之待測的該載物平台41表面(即沾黏有如圖4所示的微粒411的表面)掃描上述的該等取樣點並量測其與各該取樣點的一第四距離,並由該處理器2產生包含該等取樣點(座標)及其對應的該第四距離的一另一待測表面輪廓數據,如圖7所示(圖7顯示與圖3所示同一行的連續多個取樣點的該第四距離)。In addition, in order to prove that the present embodiment has a better particle detection capability, as shown in FIG6, another reference surface profile data including the sampling points (coordinates) and the third distances corresponding thereto is obtained by the above method. The third distances are generated by the non-contact
且如圖8所示,該處理器2以該另一基準表面輪廓數據減去該另一待測表面輪廓數據而得到另一表面輪廓差異數據,該處理器2並根據另一臨界值(圖8中的虛線)判斷該另一表面輪廓差異數據中是否有某一或某些取樣點對應的該差距大於該另一臨界值,以判斷該或該些取樣點處是否存在微粒;而在此情況下1,圖8所示的該些連續的取樣點中只有一個取樣點處的該差距大於該另一臨界值,使得該處理器2只能判斷出一個取樣點處(例如圖8中被圈選的1個取樣點)存在微粒(例如圖8中與被圈選的取樣點對應之位在中間的1個大黑點),而其它兩個落在取樣點旁邊或附近的微粒(例如圖8中位在左、右的兩個大黑點)則因為未落在取樣點位置上而無法被該非接觸式高度量測器3偵測到。其中,該另一臨界值基本上是本實施例的該臨界值減去該檢測板材1的厚度,但不以此為限,且本實施例的該臨界值基本上是根據實驗結果而決定。As shown in FIG8 , the
由此可知,本實施例藉由在該載物平台41表面吸附該檢測板材1,再對該檢測板材1表面進行掃描及高度(輪廓)量測,確實能夠提高該載物平台41表面微粒的檢出能力。It can be seen that the present embodiment can indeed improve the ability to detect particles on the surface of the
綜上所述,上述實施例藉由取得被具有該基準狀態或該既定狀態的該載物平台41表面吸附的該檢測板材1表面的多個取樣點的高度(即該第一距離)構成的該基準表面輪廓數據和取得被待測的該載物平台41表面吸附的該檢測板材1表面的該等取樣點的高度(即該第二距離)構成的該待測表面輪廓數據,並根據該待測表面輪廓數據和該基準表面輪廓數據之間的差距,判斷待測的該載物平台41表面是否存在微粒,並提高該載物平台41表面微粒的檢出能力,確實達到本發明的功效與目的。In summary, the above-mentioned embodiment obtains the reference surface profile data consisting of the heights of multiple sampling points on the surface of the detection plate 1 adsorbed by the surface of the
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above is only an example of the implementation of the present invention, and it should not be used to limit the scope of the implementation of the present invention. All simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still within the scope of the patent of the present invention.
1:檢測板材 2:處理器 3:非接觸式高度量測器 4:半導體量測或檢測設備 41:載物平台 411:微粒 42:移動載具 S1~S5:步驟 1: Test plate 2: Processor 3: Non-contact height measurement device 4: Semiconductor measurement or testing equipment 41: Loading platform 411: Particles 42: Mobile carrier S1~S5: Steps
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地顯示,其中: 圖1是本發明載物平台表面狀態檢測方法的一實施例的主要流程步驟; 圖2是本發明載物平台表面狀態檢測系統的一實施例包括的主要元件方塊示意圖; 圖3顯示本實施例的非接觸式高度量測器掃描被具有一基準狀態或一既定狀態的載物平台表面吸附的檢測板材表面的多個取樣點而量測到其與每一取樣點的該第一距離; 圖4顯示本實施例的非接觸式高度量測器掃描被待測的載物平台表面吸附的檢測板材表面之與圖3所示相同的該等取樣點而量測到其與每一取樣點的該第二距離; 圖5顯示以圖4所示的該等取樣點對應的第二距離減去圖3所示的該等取樣點對應的第一距離得到該等取樣點對應的差距; 圖6顯示本實施例以非接觸式高度量測器掃描具有一基準狀態或一既定狀態的載物平台表面之與圖3所示相同的該等取樣點而量測到其與每一取樣點的該第三距離; 圖7顯示本實施例的非接觸式高度量測器掃描待測的載物平台表面之與圖3所示相同的該等取樣點而量測到其與每一取樣點的該第四距離;及 圖8顯示以圖7所示的該等取樣點對應的第四距離減去圖6所示的該等取樣點對應的第三距離得到該等取樣點對應的差距。 Other features and functions of the present invention will be clearly shown in the implementation method with reference to the drawings, wherein: FIG. 1 is the main process steps of an embodiment of the method for detecting the surface state of the loading platform of the present invention; FIG. 2 is a schematic diagram of the main component blocks included in an embodiment of the system for detecting the surface state of the loading platform of the present invention; FIG. 3 shows that the non-contact height measuring device of the present embodiment scans a plurality of sampling points on the surface of the detection plate adsorbed by the surface of the loading platform having a reference state or a predetermined state and measures the first distance between the non-contact height measuring device and each sampling point; FIG. 4 shows that the non-contact height measuring device of the present embodiment scans the same sampling points as shown in FIG. 3 on the surface of the detection plate adsorbed by the surface of the loading platform to be tested and measures the second distance between the non-contact height measuring device and each sampling point; FIG5 shows the gaps corresponding to the sampling points obtained by subtracting the first distances corresponding to the sampling points shown in FIG3 from the second distances corresponding to the sampling points shown in FIG4; FIG6 shows the third distance between the sampling points and each sampling point measured by the non-contact height measuring device of the present embodiment scanning the same sampling points as shown in FIG3 on the surface of the loading platform to be measured having a reference state or a predetermined state; FIG7 shows the fourth distance between the non-contact height measuring device of the present embodiment scanning the same sampling points as shown in FIG3 on the surface of the loading platform to be measured; and FIG8 shows the gaps corresponding to the sampling points obtained by subtracting the third distances corresponding to the sampling points shown in FIG6 from the fourth distance corresponding to the sampling points shown in FIG7.
S1~S5:步驟 S1~S5: Steps
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112148710A TWI869113B (en) | 2023-12-14 | 2023-12-14 | Method and system for detecting surface condition of loading platform |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112148710A TWI869113B (en) | 2023-12-14 | 2023-12-14 | Method and system for detecting surface condition of loading platform |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI869113B true TWI869113B (en) | 2025-01-01 |
| TW202524069A TW202524069A (en) | 2025-06-16 |
Family
ID=95152172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112148710A TWI869113B (en) | 2023-12-14 | 2023-12-14 | Method and system for detecting surface condition of loading platform |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI869113B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101385120B (en) * | 2006-02-21 | 2012-09-05 | 株式会社尼康 | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
-
2023
- 2023-12-14 TW TW112148710A patent/TWI869113B/en active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101385120B (en) * | 2006-02-21 | 2012-09-05 | 株式会社尼康 | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202524069A (en) | 2025-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI405961B (en) | Air filter leak inspection method | |
| KR20100033476A (en) | Method and apparatus for mura detection and metrology | |
| JP5536805B2 (en) | Patterned wafer inspection system using non-vibrating contact potential difference sensor | |
| TW201734460A (en) | Linear inspection system | |
| TWI398651B (en) | A method and system for determining a contact potential difference of a surface of a material to characterize a surface, a semiconductor wafer to be used in an electronic component, and a contact potential difference between the surface of the sensor and the material to determine characteristics of the surface Method | |
| JP6649552B2 (en) | System and method for generating a texture map of the backside of a substrate that determines adjustment of frontside patterning | |
| JP2007520721A (en) | Surface inspection using non-vibrating contact potential probe | |
| JP6606441B2 (en) | Inspection system and inspection method | |
| TWI807171B (en) | Reference image generation for semiconductor applications | |
| TWI869113B (en) | Method and system for detecting surface condition of loading platform | |
| US7103482B2 (en) | Inspection system and apparatus | |
| TW201833562A (en) | Prober and method for positioning probe tip and obtaining probe and polishing sheet contact data | |
| JP2009058480A (en) | Scanning probe microscope and cantilever management method | |
| CN120160583A (en) | Method and system for detecting surface state of loading platform | |
| JPH09127247A (en) | Method and equipment for inspecting radioactive contamination of article | |
| US20180045937A1 (en) | Automated 3-d measurement | |
| JPH0649958U (en) | Semiconductor wafer thickness measuring machine | |
| JP2758844B2 (en) | Semiconductor wafer slip line inspection method and semiconductor wafer evaluation method | |
| JP2006138655A (en) | Scanning probe microscope | |
| JPS6386540A (en) | Semiconductor wafer processor | |
| JP2006119086A (en) | Subject retention method and device, and measuring device equipped with subject retaining device | |
| JP2007248418A (en) | Scanning probe microscope | |
| JP2005308520A (en) | Thickness measuring instrument | |
| JPH0799757B2 (en) | Wafer foreign matter determination method | |
| WO2002025691A1 (en) | Electron beam inspecting method and its device |