TWI869097B - CVD backplane device - Google Patents

Abstract

A CVD back plate device includes a back plate body, a vent, at least four conductive tubes, and at least four air holes. The vent penetrates from a first surface of the back plate body to a second surface. The conductive tubes are located in the back plate body, extend radially outward from the vent, and do not intersect the first surface or the second surface. The air holes are respectively arranged corresponding to the conductive tubes, each of the air holes penetrates from the second surface to the corresponding conductive tube, and does not penetrate to the first surface, and each of the air holes is connected to the vent through the corresponding conductive tube, so that gas can flow into the vent and then flow out of the air holes through the conductive tubes. In this way, better gas diffusion uniformity can be obtained and better gas utilization efficiency can be achieved.

Description

CVD backplane device

The present invention relates to a backplane device used in the display manufacturing field, in particular to a CVD backplane device.

Chemical vapor deposition (CVD) is a process that forms a thin film on a substrate by providing gas and utilizing chemical reactions. It is widely used in the manufacture of thin film transistor liquid crystal displays (TFT-LCD).

The back plate is one of the core components of a CVD machine. During the production process, gas can enter a reaction chamber through the back plate and diffuse throughout the reaction chamber to react with a substrate in the reaction chamber.

As shown in FIG1 , a conventional backing plate 11 is provided with a through hole 12 on the backing plate 11 so that process gas or cleaning gas can enter the reaction chamber (not shown) through the through hole 12 through the backing plate 11. However, the backing plate 11 still has room for improvement in terms of gas diffusion uniformity and gas utilization efficiency.

Therefore, the purpose of the present invention is to provide a CVD backplane device that can improve gas diffusion uniformity and gas utilization efficiency.

Therefore, the CVD back plate device of the present invention includes a back plate body, a vent hole, at least four conductive tubes, and at least four conductive holes.

The back plate body includes a first surface and a second surface located at two opposite sides.

The vent hole penetrates from the first surface to the second surface.

The conducting tubes are located in the back plate body, extend radially outward from the vent hole, and do not intersect the first surface or the second surface.

The air conducting holes are respectively arranged corresponding to the conducting tubes. Each of the air conducting holes penetrates from the second surface to the corresponding conducting tube and does not penetrate to the first surface. Each of the air conducting holes is connected to the vent hole through the corresponding conducting tube, so that gas can flow into the vent hole and then flow out of the air conducting holes through the conducting tubes.

The effect of the present invention is that: by forming the vent hole, at least four conducting tubes and at least four air-conducting holes on the back plate body, process gas or cleaning gas can enter through the vent hole and then directly enter a reaction space downward, and at the same time, the gas can flow from the vent hole through the conducting tubes to the air-conducting holes and then enter the reaction space downward from the air-conducting holes. In this way, better gas diffusion uniformity can be obtained and better gas utilization efficiency can be achieved.

Before the present invention is described in detail, it should be noted that similar components are represented by the same reference numerals in the following description.

Referring to Figures 2, 3 and 4, an embodiment of the CVD back plate device of the present invention is applicable to a CVD machine 6, which includes a reaction chamber 61 defining a reaction space 62, an air inlet pipe 63 disposed in the reaction chamber 61 and connected to the reaction space 62, an exhaust pipe 64 disposed in the reaction chamber 61 and connected to the reaction space 62, a support seat 65 disposed in the reaction chamber 61 and for placing a substrate 8, and a diffusion plate 66 disposed in the reaction space 62 and located below the embodiment, and the diffusion plate 66 has a plurality of through holes 661.

The embodiment includes a back plate body 2, a vent hole 3, eight conductive tubes 4 and eight air holes 5.

The back panel body 2 can be connected to a power source 7 and used as an electrode, and its material is a conductive material, such as aluminum. The back panel body 2 includes a first surface 21 and a second surface 22 located on two opposite sides, and a side surface 23 surrounding the vent 3 and connecting the first surface 21 and the second surface 22. The back panel body 2 is square, for example, a rectangle slightly wider than a square. Its length, width and height are, for example, 2500mm (millimeter) x 2200mm x 140mm, wherein the arithmetic mean roughness (Ra, or average arithmetic deviation) of the second surface 22 is between 0.05μm and 0.07μm.

The vent hole 3 penetrates from the first surface 21 of the back plate body 2 to the second surface 22 and is located at the center of the back plate body 2 .

Referring to FIG. 3, FIG. 4 and FIG. 5, the conductive tubes 4 are located in the back plate body 2, extending radially outward from the vent hole 3 and the angles between every two adjacent conductive tubes 4 are the same. The conductive tubes 4 penetrate from the vent hole 3 to the side circumference 23 to form a plurality of openings 41. The conductive tubes 4 do not intersect the first surface 21 or the second surface 22, for example, they are parallel to the first surface 21 and the second surface 22. The openings 41 of the conductive tubes 4 on the side circumference 23 can be sealed with a filling material (not shown) or by soldering to prevent gas from flowing out of the openings 41.

The air holes 5 are respectively arranged corresponding to the conducting tubes 4, and each of the air holes 5 penetrates from the second surface 22 to the corresponding conducting tube 4, and does not penetrate to the first surface 21. Each of the air holes 5 is connected to the vent 3 via the corresponding conducting tube 4. In FIG. 4 , the air hole 5 arranged at the top is located in the middle of the conducting tube 4, and the distance between each of the remaining air holes 5 and the vent 3 is the same as the distance between the air hole 5 at the top and the vent 3.

3 , 4 and 5 , the conducting tubes 4 and the air holes 5 are linearly symmetrical about a middle line L parallel to the second surface 22 and passing through the air hole 3 , and are point symmetrical about the air hole 3 as the center.

The number of the conducting tubes 4 and the air holes 5 can be adjusted according to actual needs, for example, four, five, six, seven, or eight or more, and designed to be line symmetric, or point symmetric, or line symmetric and point symmetric, so that better gas diffusion uniformity can be obtained. The distance between each of the air holes 5 and the vent 3 can also be adjusted according to actual needs. Similarly, their distribution can be designed to be line symmetric, or point symmetric, or line symmetric and point symmetric, so that better gas diffusion uniformity can be obtained. Each of the conducting tubes 4 can also be provided with one or more air holes 5 according to actual needs.

Please refer to FIG. 6 for a different configuration of the air guide holes 5. In this configuration, the air guide holes 5 are defined as a plurality of first air guide holes 51 and a plurality of second air guide holes 52, the distance between each of the first air guide holes 51 and the vent hole 3 is greater than the distance between each of the second air guide holes 52 and the vent hole 3, and the first air guide holes 51 and the second air guide holes 52 are spaced around the vent hole 3.

Please refer to FIG. 7 and FIG. 8 for different configurations of the conductive tubes 4 and the air holes 5. In FIG. 7 , the number of the conductive tubes 4 and the air holes 5 are both four. The conductive tubes 4 are arranged to form an X-shape whose width is greater than its height. The angle between each conductive tube 4 and two adjacent conductive tubes 4 is different, that is, the angles formed by the conductive tubes 4 are different for every two adjacent conductive tubes 4. In FIG. 8 , the number of the conductive tubes 4 and the air holes 5 are both four. The conductive tubes 4 are arranged to form a cross shape. The angle between each conductive tube 4 and two adjacent conductive tubes 4 is the same, that is, the angles between every two adjacent conductive tubes 4 are the same.

Referring to FIG. 2 , FIG. 3 and FIG. 5 , through the above description, the effects of this embodiment are as follows:

1. By forming the vent hole 3, at least four conducting tubes 4 and at least four air guide holes 5 on the back plate body 2, process gas or cleaning gas (e.g., NF3) can enter through the air inlet pipe 63, and then directly go down through the diffusion plate 66 to enter the reaction space 62 through the vent hole 3 of the back plate body 2, and at the same time, the gas can flow from the vent hole 3 through the conducting tubes 4 to the air guide holes 5, and then go down through the diffusion plate 66 to enter the reaction space 62 from the air guide holes 5. In this way, better gas diffusion uniformity can be obtained, so that the gas can be evenly diffused in the reaction space 62 in a shorter time, thereby reducing the amount of gas used, so as to achieve better gas utilization efficiency.

Second, by arranging the conducting tubes 4 to be line-symmetrical, or point-symmetrical, or both line-symmetrical and point-symmetrical, the gas diffusion uniformity can be further improved through the symmetrical design.

Third, by arranging the conducting tubes 4 to pass through the vent hole 3 to the side circumferential surface 23, the conducting tubes 4 can be manufactured by side drilling, thus having the advantage of being easy to manufacture.

Fourth, by designing the angles between every two adjacent conducting tubes 4 to be the same, or designing the distances between each air conducting hole 5 and the vent hole 3 to be the same, or designing the above angles and the above distances to be the same, the gas diffusion uniformity can be further improved through a symmetrical design.

5. Since the smoother the surface, the faster the jet speed, therefore, by setting the arithmetic mean roughness of the second surface 22 between 0.05 μm and 0.07 μm, the speed of gas flow can be increased, and the uniformity of gas diffusion can be further improved.

In summary, the CVD backplane device of the present invention can indeed achieve the purpose of the present invention.

However, the above is only an example of the implementation of the present invention, and it should not be used to limit the scope of the implementation of the present invention. All simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still within the scope of the patent of the present invention.

2: Back plate body 21: First surface 22: Second surface 23: Side surface 3: Ventilation hole 4: Conducting tube 41: Opening hole 5: Air guide hole 51: First air guide hole 52: Second air guide hole 6: CVD machine 61: Reaction chamber 62: Reaction space 63: Air inlet pipe 64: Exhaust pipe 65: Support base 66: Diffusion plate 661: Through hole 7: Power supply 8: Substrate L: Middle line

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: FIG. 1 is a three-dimensional schematic diagram of a known back plate; FIG. 2 is a schematic diagram of an embodiment of the CVD back plate device of the present invention applied to a CVD machine; FIG. 3 is a top view schematic diagram of the embodiment; FIG. 4 is a bottom view schematic diagram of the embodiment; FIG. 5 is a cross-sectional schematic diagram of the embodiment; and FIG. 6-8 are bottom views of other embodiments of the embodiment.

2: Back panel body

22: Second surface

3: Ventilation hole

4: Conductive tube

5: Air duct

Claims (8)

A CVD back plate device comprises: A back plate body, including a first surface and a second surface located on two opposite sides; A vent hole, penetrating from the first surface to the second surface; At least four conducting tubes, located in the back plate body, extending radially outward from the vent hole, and not intersecting the first surface or the second surface; At least four air conducting holes, respectively arranged corresponding to the conducting tubes, each of the air conducting holes penetrating from the second surface to the corresponding conducting tube, and not penetrating to the first surface, each of the air conducting holes is connected to the air conducting hole through the corresponding conducting tube, so that gas can flow into the air conducting hole and then flow out of the air conducting holes through the conducting tubes. A CVD backplate device as described in claim 1, wherein the conductive tubes are linearly symmetrical about a center line parallel to the second surface and passing through the vent hole. A CVD backplate device as described in claim 1, wherein the conductive tubes are point-symmetrical with the vent hole as the center. A CVD back plate device as described in claim 1, wherein the back plate body further includes a side surface surrounding the vent hole and connecting the first surface and the second surface, and the conductive tubes penetrate from the vent hole to the side surface. A CVD backplate device as described in claim 1, wherein the angles between every two adjacent conductive tubes are the same. A CVD backplate device as described in claim 1, wherein the distance between each of the air guide holes and the ventilation hole is the same. A CVD backplate device as described in claim 1, wherein the air holes are defined as a plurality of first air holes and a plurality of second air holes, the distance between each of the first air holes and the ventilation hole is greater than the distance between each of the second air holes and the ventilation hole, and the first air holes and the second air holes are spaced around the ventilation hole. A CVD backplate device as described in claim 1, wherein the arithmetic mean roughness of the second surface is between 0.05 μm and 0.07 μm.

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