TWI868931B - Pulse Width Modulation System - Google Patents
Pulse Width Modulation System Download PDFInfo
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- TWI868931B TWI868931B TW112135749A TW112135749A TWI868931B TW I868931 B TWI868931 B TW I868931B TW 112135749 A TW112135749 A TW 112135749A TW 112135749 A TW112135749 A TW 112135749A TW I868931 B TWI868931 B TW I868931B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
本發明公開了一種脈寬調變系統,包括:直流電源、由直流電源供電的負載、用於控制負載上的電壓的P型金屬氧化物半導體場效應電晶體(P-Metal-Oxide-Semiconductor Field-Effect Transistor,P-MOSFET)、以及用於控制P-MOSFET的關斷與開啟的開關控制單元,其中,開關控制單元連接到P-MOSFET的閘極並且用於產生用於控制P-MOSFET的關斷與開啟的脈寬調變(Pulse Width Modulation,PWM)信號以在負載上產生恆定的目標設定電壓。 The present invention discloses a pulse width modulation system, comprising: a direct current power source, a load powered by the direct current power source, a P-type metal oxide semiconductor field effect transistor (P-Metal-Oxide-Semiconductor Field-Effect Transistor, P-MOSFET) for controlling the voltage on the load, and a switch control unit for controlling the turning off and on of the P-MOSFET, wherein the switch control unit is connected to the gate of the P-MOSFET and is used to generate a pulse width modulation (Pulse Width Modulation, PWM) signal for controlling the turning off and on of the P-MOSFET to generate a constant target setting voltage on the load.
Description
本發明涉及電路領域,尤其涉及一種脈寬調變系統。 The present invention relates to the field of circuits, and in particular to a pulse width modulation system.
在消費類電子產品應用領域,有很多應用場景是在輸入電壓不固定的情況下,要求輸出固定的電壓,以達到恆定的帶載需求,比如電子煙系統,其供電一般為電池或者充電設備,隨著電池的消耗,電壓不斷降低,但是輸出需要固定的應用電壓,這樣才能使電子煙保持一致的加熱效果。傳統做法是採用閉環控制系統,該系統對輸出電壓進行採樣並通過環路調節,實現對輸出電壓的精準控制,但這種系統往往較複雜,且需要搭配較多的外部器件,不太適用小外圍尺寸的系統。 In the field of consumer electronic products, there are many application scenarios where the input voltage is not fixed, but a fixed output voltage is required to achieve a constant load demand. For example, the electronic cigarette system is generally powered by batteries or charging equipment. As the battery is consumed, the voltage continues to decrease, but the output requires a fixed application voltage so that the electronic cigarette can maintain a consistent heating effect. The traditional approach is to use a closed-loop control system, which samples the output voltage and adjusts it through a loop to achieve precise control of the output voltage, but this system is often more complex and requires more external devices, and is not suitable for systems with small peripheral sizes.
根據本發明的實施例,提供了一種脈寬調變系統,包括:直流電源、由所述直流電源供電的負載、用於控制所述負載上的電壓的P型金屬氧化物半導體場效應電晶體(P-MOSFET)、以及用於控制所述P-MOSFET的關斷與開啟的開關控制單元,其中,所述開關控制單元連接到所述P-MOSFET的閘極並且用於產生用於控制所述P-MOSFET的關斷與開啟的脈寬調變PWM信號以在所述負載上產生恆定的目標設定電壓。 According to an embodiment of the present invention, a pulse width modulation system is provided, comprising: a DC power supply, a load powered by the DC power supply, a P-type metal oxide semiconductor field effect transistor (P-MOSFET) for controlling the voltage on the load, and a switch control unit for controlling the turning off and on of the P-MOSFET, wherein the switch control unit is connected to the gate of the P-MOSFET and is used to generate a pulse width modulation PWM signal for controlling the turning off and on of the P-MOSFET to generate a constant target setting voltage on the load.
在一個實施例中,所述開關控制單元包括跟隨器、斜波信號生成器、振盪器、參考信號生成器以及比較器,其中,所述跟隨器的輸入端連接到所述直流電源的正極並且輸出端連接到所述斜波信號生成器的第一輸入端,所述振盪器的輸出端連接到所述斜波信號生成器的第二輸入端,所述斜波信號生成器的輸出端連接到所述比較器的正極輸入端,所述參考信號生成器的輸出端連接到所述比較器的負極輸入端,所述比較器的輸出端連接到所述P-MOSFET的 閘極,其中,所述振盪器用於生成週期為T的時鐘信號並且在每個時鐘的上升沿產生同週期的斜波信號重置脈衝信號,所述斜波信號生成器用於在所述斜波信號重置脈衝信號為低位準時輸出斜波信號,所述比較器用於通過比較所述斜波信號和由所述參考信號生成器產生的基準參考信號來生成所述PWM信號。 In one embodiment, the switch control unit includes a follower, a ramp signal generator, an oscillator, a reference signal generator and a comparator, wherein the input end of the follower is connected to the positive electrode of the DC power supply and the output end is connected to the first input end of the ramp signal generator, the output end of the oscillator is connected to the second input end of the ramp signal generator, the output end of the ramp signal generator is connected to the positive input end of the comparator, and the output end of the reference signal generator is connected to the positive input end of the comparator. The comparator is connected to the negative input terminal of the comparator, and the output terminal of the comparator is connected to the gate of the P-MOSFET, wherein the oscillator is used to generate a clock signal with a period of T and generate a ramp signal reset pulse signal with the same period at the rising edge of each clock, the ramp signal generator is used to output the ramp signal when the ramp signal reset pulse signal is at a low level, and the comparator is used to generate the PWM signal by comparing the ramp signal with the reference reference signal generated by the reference signal generator.
在一個實施例中,在每個時鐘週期T開始時,所述斜波信號生成器由於所述斜波信號重置脈衝信號是高位準而將輸出降為0,此時所述PWM信號翻轉為低位準並且所述P-MOSFET開啟;當所述斜波信號重置脈衝信號變為低位準時,所述斜波信號生成器生成所述斜波信號,在所述斜波信號等於所述基準參考信號時,所述PWM信號翻轉為高位準並且所述P-MOSFET關斷。 In one embodiment, at the beginning of each clock cycle T, the ramp signal generator reduces the output to 0 because the ramp signal reset pulse signal is at a high level, at which time the PWM signal turns to a low level and the P-MOSFET turns on; when the ramp signal reset pulse signal becomes a low level, the ramp signal generator generates the ramp signal, and when the ramp signal is equal to the reference signal, the PWM signal turns to a high level and the P-MOSFET turns off.
在一個實施例中,所述跟隨器包括運算放大器、電阻、由輸入P-MOSFET和輸出P-MOSFET形成的P-MOSFET電流鏡的所述輸入P-MOSFET、N型金屬氧化物半導體場效應電晶體(N-Metal-Oxide-Semiconductor Field-Effect Transistor,N-MOSFET)跟隨器,其中,所述運算放大器的正極輸入端連接到所述直流電源並且負極輸入端連接到所述電阻的第一端,所述電阻的第二端接地,所述N-MOSFET跟隨器的閘極連接到所述運算放大器的輸出端、源極連接到所述電阻的所述第一端、汲極連接到所述P-MOSFET電流鏡的所述輸入P-MOSFET;所述斜波信號生成器包括所述電流鏡的輸出P-MOSFET、第一電容,其中,所述第一電容的第一端連接到所述輸出P-MOSFET並且所述第一電容的第二端接地,所述斜波信號生成器生成的所述斜波信號為所述的第一電容上的電壓,所述第一電容與斜波信號重置脈衝開關並聯連接,當所述斜波信號重置脈衝信號為高位準時,所述斜波信號重置脈衝開關閉合以使得所述第一電容被放電,當所述斜波信號重置脈衝信號為低位準時,所述斜波信號重置脈衝開關斷開,通過所述電流鏡給所述第一電容充電。 In one embodiment, the follower includes an operational amplifier, a resistor, the input P-MOSFET of a P-MOSFET current mirror formed by an input P-MOSFET and an output P-MOSFET, and an N-type metal oxide semiconductor field effect transistor (N-Metal-Oxide-Semiconductor Field-Effect Transistor, N-MOSFET) follower, wherein the positive input terminal of the operational amplifier is connected to the DC power supply and the negative input terminal is connected to the first end of the resistor, the second end of the resistor is grounded, the gate of the N-MOSFET follower is connected to the output terminal of the operational amplifier, the source is connected to the first end of the resistor, and the drain is connected to the input P-MOSFET of the P-MOSFET current mirror; the ramp signal generator includes the output P-MOSFET of the current mirror, a first capacitor, and In the embodiment, the first end of the first capacitor is connected to the output P-MOSFET and the second end of the first capacitor is grounded. The ramp signal generated by the ramp signal generator is the voltage on the first capacitor. The first capacitor is connected in parallel with the ramp signal reset pulse switch. When the ramp signal reset pulse signal is at a high level, the ramp signal reset pulse switch is closed to discharge the first capacitor. When the ramp signal reset pulse signal is at a low level, the ramp signal reset pulse switch is opened to charge the first capacitor through the current mirror.
在一個實施例中,所述參考信號生成器生成的所述基準參考信號是固定電壓。 In one embodiment, the reference signal generated by the reference signal generator is a fixed voltage.
在一個實施例中,所述參考信號生成器生成的所述基準參考信號不是固定電壓。 In one embodiment, the reference signal generated by the reference signal generator is not a fixed voltage.
在一個實施例中,所述參考信號生成器的電路通過複用所述斜波 信號生成器的電路來週期性地刷新所述基準參考電壓。 In one embodiment, the circuit of the reference signal generator periodically refreshes the base reference voltage by multiplexing the circuit of the ramp signal generator.
在一個實施例中,所述基準參考信號的刷新週期是(1+n)T。 In one embodiment, the refresh period of the reference signal is (1+n)T.
在一個實施例中,所述參考信號生成器包括第二電容、第一選通器以及參考信號重置脈衝開關,所述第二電容的第一端通過所述第一選通器連接到所述電流鏡的輸出P-MOSFET且第二端接地,並且所述第二電容與參考信號重置脈衝開關並聯連接以通過由參考信號重置脈衝信號控制所述參考信號重置脈衝開關的斷開與閉合來實現對所述第二電容的充放電;並且其中,所述斜波信號生成器還包括第二選通器,所述斜波信號生成器的所述第一電容通過所述第二選通器連接到所述電流鏡的輸出P-MOSFET;並且其中,針對所述負載的所述目標設定電壓通過所述第一選通器輸入到所述跟隨器的運算放大器的正極輸入端,而所述直流電源通過所述第二選通器輸入到所述跟隨器的運算放大器的正極輸入端。 In one embodiment, the reference signal generator includes a second capacitor, a first gate, and a reference signal reset pulse switch, wherein a first end of the second capacitor is connected to an output P-MOSFET of the current mirror through the first gate and a second end is grounded, and the second capacitor is connected in parallel with the reference signal reset pulse switch to realize charging and discharging of the second capacitor by controlling the opening and closing of the reference signal reset pulse switch by the reference signal reset pulse signal. The ramp signal generator further comprises a second gate, and the first capacitor of the ramp signal generator is connected to the output P-MOSFET of the current mirror through the second gate; and the target setting voltage for the load is input to the positive input terminal of the operational amplifier of the follower through the first gate, and the DC power supply is input to the positive input terminal of the operational amplifier of the follower through the second gate.
在一個實施例中,所述參考信號重置脈衝信號的週期是(1+n)T,其中n是正整數。 In one embodiment, the period of the reference signal reset pulse signal is (1+n)T, where n is a positive integer.
在一個實施例中,在第一時鐘週期T開始時,所述參考信號重置脈衝信號為高位準,此時所述參考信號重置脈衝開關閉合以對所述第二電容放電;在所述參考信號重置脈衝信號變為低位準時,所述第一選通器閉合以選通所述目標設定電壓,此時通過所述跟隨器在所述電阻上產生第一電流I1,所述電流鏡將所述第一電流I1送入所述第二電容以對其進行充電,當所述第一時鐘週期T結束時斷開所述第一選通器,此時產生保持在所述第二電容上的第一參考電壓;在第二時鐘週期開始時,所述第一選通器斷開並且第二選通器閉合以選通所述直流電源的電壓,然後通過所述跟隨器在所述電阻上產生第二電流I2,所述電流鏡將所述第二電流I2送入所述第一電容以對其進行充電,所述斜波信號生成器將根據所述第一電容上的電壓生成的斜波信號送入所述比較器以與所述第一參考電壓進行比較,進而產生所述PWM信號,當所述第二時鐘週期結束時,所述斜波信號重置脈衝信號變為高位準,此時所述斜波信號重置脈衝開關閉合以對所述第一電容放電,而後所述第二選通器保持閉合n個時鐘週期T以繼續n個時鐘週期的對第一電容的充放電;在第n+1個時鐘週期開始時斷開所述 第二選通器同時閉合所述第一選通器以將所述第一參考電壓刷新為第二參考電壓,並重複上述過程。 In one embodiment, at the beginning of the first clock cycle T, the reference signal reset pulse signal is at a high level, at which time the reference signal reset pulse switch is closed to discharge the second capacitor; when the reference signal reset pulse signal becomes a low level, the first gate is closed to gate the target setting voltage, at which time the first current I1 is generated on the resistor through the follower, and the The current mirror sends the first current I1 into the second capacitor to charge it. When the first clock cycle T ends, the first gate is disconnected, and the first reference voltage maintained on the second capacitor is generated at this time. At the beginning of the second clock cycle, the first gate is disconnected and the second gate is closed to select the voltage of the DC power supply, and then the second current I2 is generated on the resistor through the follower. The current mirror sends the second current I2 into the first capacitor to charge it. The ramp signal generator sends the ramp signal generated according to the voltage on the first capacitor to the comparator to compare with the first reference voltage, thereby generating the PWM signal. When the second clock cycle ends, the ramp signal resets the pulse signal to a high level. , at this time, the ramp signal reset pulse switch is closed to discharge the first capacitor, and then the second gate remains closed for n clock cycles T to continue charging and discharging the first capacitor for n clock cycles; at the beginning of the n+1th clock cycle, the second gate is disconnected and the first gate is closed at the same time to refresh the first reference voltage to the second reference voltage, and the above process is repeated.
在一個實施例中,所述供電電源是電池。 In one embodiment, the power supply is a battery.
在一個實施例中,所述脈衝調變系統用於電子煙系統的放電電路。 In one embodiment, the pulse modulation system is used in a discharge circuit of an electronic cigarette system.
根據本發明提供的上述實施例,提供了一種結構簡單且能很好控制輸出精度的開環脈寬調整電路,它不需要複雜的回饋環路和外圍器件,極大簡化了整個應用結構。 According to the above-mentioned embodiment provided by the present invention, an open-loop pulse width adjustment circuit with a simple structure and good control of output accuracy is provided. It does not require a complex feedback loop and peripheral devices, greatly simplifying the entire application structure.
100:放電電路 100: Discharge circuit
102,302:直流電源 102,302: DC power supply
104:控制單元 104: Control unit
106,206,306:負載 106,206,306: Load
202,VDC:直流電壓 202,V DC : DC voltage
204:功能電路 204: Functional circuit
300:產生高精度輸出電壓的簡體構圖 300: Simplified structure for generating high-precision output voltage
304:開關控制單元 304: Switch control unit
308:P型金屬氧化物半導體場效應電晶體(P-MOSFET) 308: P-type metal oxide semiconductor field effect transistor (P-MOSFET)
400:產生高精度輸出電壓的內部結構構圖 400: Internal structure diagram for generating high-precision output voltage
402:跟隨器 402: Follower
404:斜波信號生成器 404: Ramp signal generator
406:振盪器 406: Oscillator
408:參考信號生成器 408: Reference signal generator
410:比較器 410: Comparator
601:運算放大器 601: Operational amplifier
602:輸入P-MOSFET 602: Input P-MOSFET
603:輸出P-MOSFET 603: Output P-MOSFET
604:N型金屬氧化物半導體場效應電晶體(N-MOSFET)跟隨器 604: N-MOSFET follower
605:電阻 605:Resistance
606:第一電容 606: First capacitor
607:斜波信號重置脈衝開關 607: Ramp signal resets pulse switch
701:第一選通器 701: First selector
702:第二選通器 702: Second selector
703:第二電容 703: Second capacitor
704:參考信號重置脈衝開關 704: Reference signal resets pulse switch
C:電容 C: Capacitor
CLK:信號 CLK: signal
GATE,Vtarget:電壓 GATE, Vtarget: voltage
I:電流 I: Current
I1:第一電流 I1: first current
I2:第二電流 I2: Second current
L:輸出電電感 L: Output inductance
pg:電源滿足要求的 pg: The power supply meets the requirements
PWM:脈寬調變 PWM: Pulse Width Modulation
Reset Pulse:斜波信號重置脈衝信號 Reset Pulse: Ramp signal resets the pulse signal
T:第一時鐘週期 T: First clock cycle
VR:輸出電壓 VR: output voltage
Vramp:斜波信號(斜波電壓) Vramp: Ramp signal (ramp voltage)
Vref Reset Pulse:參考電壓重置脈衝信號 Vref Reset Pulse: Reference voltage reset pulse signal
Vref:基準參考信號電壓 Vref: reference signal voltage
從下面結合圖式對本發明的具體實施方式的描述中可以更好地理解本發明,其中: The present invention can be better understood from the following description of the specific implementation of the present invention in conjunction with the drawings, wherein:
圖1示出了一種典型的直流電源的放電電路的簡單示意圖。 Figure 1 shows a simple schematic diagram of a typical DC power supply discharge circuit.
圖2示出了用直流/直流(DC-DC)實現的直流電源的放電電路的示意圖。 Figure 2 shows a schematic diagram of the discharge circuit of a DC power supply implemented with DC/DC (DC-DC).
圖3示出了根據本發明實施例的用電晶體實現的直流電源的放電電路的示意圖。 FIG3 shows a schematic diagram of a discharge circuit of a DC power supply implemented with a transistor according to an embodiment of the present invention.
圖4示出了根據本發明實施例的圖3所示的放電電路的開關控制單元的實現示意圖。 FIG4 shows a schematic diagram of an implementation of a switch control unit of the discharge circuit shown in FIG3 according to an embodiment of the present invention.
圖5示出了根據本發明實施例的圖4所示的開關控制單元中的多個信號的時序波形圖。 FIG5 shows a timing waveform diagram of multiple signals in the switch control unit shown in FIG4 according to an embodiment of the present invention.
圖6示出了根據本發明實施例的圖3所示的開關控制單元的電路示意圖。 FIG6 shows a circuit diagram of the switch control unit shown in FIG3 according to an embodiment of the present invention.
圖7示出了根據本發明實施例的圖4所示的開關控制單元的另一電路示意圖。 FIG7 shows another circuit diagram of the switch control unit shown in FIG4 according to an embodiment of the present invention.
圖8示出了根據本發明實施例的圖7的所示的開關控制單元的實現時序圖。 FIG8 shows a timing diagram of the implementation of the switch control unit shown in FIG7 according to an embodiment of the present invention.
下面將詳細描述本發明的各個方面的特徵和示例性實施例。在下面的詳細描述中,提出了許多具體細節,以便提供對本發明的全面理解。但是,對於本領域技術人員來說很明顯的是,本發明可以在不需要這些具體細節中的一些細節的情況下實施。下面對實施例的描述僅僅是為了通過示出本發明的示例來提供對本發明的更好的理解。本發明決不限於下面所提出的任何具體配置, 而是在不脫離本發明的精神的前提下覆蓋了元素、部件和演算法的任何修改、替換和改進。在圖式和下面的描述中,沒有示出公知的結構和技術,以便避免對本發明造成不必要的模糊。另外,需要說明的是,這裡使用的用語“A與B連接”可以表示“A與B直接連接”也可以表示“A與B經由一個或多個其他元件間接連接”。 The features and exemplary embodiments of various aspects of the present invention are described in detail below. In the detailed description below, many specific details are set forth in order to provide a comprehensive understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention can be implemented without some of these specific details. The following description of the embodiments is intended only to provide a better understanding of the present invention by illustrating examples of the present invention. The present invention is in no way limited to any specific configuration set forth below, but rather covers any modification, substitution, and improvement of elements, components, and algorithms without departing from the spirit of the present invention. In the drawings and the following description, well-known structures and techniques are not shown in order to avoid unnecessary ambiguity of the present invention. In addition, it should be noted that the term "A and B are connected" used here can mean "A and B are directly connected" or "A and B are indirectly connected via one or more other components."
圖1示出了一種典型的直流電源的放電電路100的簡單示意圖。如圖1所示,該放電電路100包括提供直流電壓VDC的直流電源102、控制單元104以及負載106,其中VR表示輸出電壓。
Fig. 1 shows a simple schematic diagram of a typical discharge circuit 100 of a DC power source. As shown in Fig. 1, the discharge circuit 100 includes a
在一個實施例中,直流電源102可以是任何提供直流電壓的設備,例如,該直流電源102可以是電池,本文對此不做限制。
In one embodiment, the
在一個實施例中,負載106可以是任何可以由直流電源供電的設備,例如,負載106可以是電熱絲,本文對此不做限制。
In one embodiment, the
放電電路100的工作方式是:在直流電源102供電的條件下,通過控制單元104,在負載上產生恆定的平均設定電壓。作為一個示例,該放電電路100可以用於電子煙系統。
The discharge circuit 100 works in such a way that, under the condition of being powered by a
傳統上,可以用DC-DC結構來實現輸出恆壓,如圖2所示,圖2示出了用DC-DC實現的直流電源的放電電路的示意圖。在圖2所示的架構中,電路結構複雜,晶片面積較大,外圍還需要電感電容,很占應用板子的面積,不太適合小外圍尺寸的系統應用,因此本發明提出了一種新的架構來解決現有電路結構複雜和/或精度不高的問題。 Traditionally, a DC-DC structure can be used to achieve output constant voltage, as shown in FIG2, which shows a schematic diagram of a discharge circuit of a DC power supply implemented by DC-DC. In the structure shown in FIG2, the circuit structure is complex, the chip area is large, and the periphery also requires inductors and capacitors, which occupies a large area of the application board and is not suitable for system applications with small peripheral dimensions. Therefore, the present invention proposes a new structure to solve the problem of complex circuit structure and/or low precision of the existing circuit.
圖3示出了根據本發明實施例的用電晶體實現的直流電源的放電電路的示意圖。如圖3所示,該放電電路包括提供直流電壓VDC的直流電源302、開關控制單元304、負載306以及P型金屬氧化物半導體場效應電晶體(P-MOSFET)308,其中VR表示輸出電壓。開關控制單元304可以用於控制P-MOSFET 308的關斷與開啟,進而控制施加到負載上的電壓。
FIG3 shows a schematic diagram of a discharge circuit of a DC power supply implemented with a transistor according to an embodiment of the present invention. As shown in FIG3 , the discharge circuit includes a
在一個實施例中,直流電源302可以是任何提供直流電壓的設備,例如,該直流電源302可以是電池,本文對此不做限制。
In one embodiment, the
在一個實施例中,負載306可以是任何可以由直流電源供電的設
備,例如,負載306可以是電熱絲,本文對此不做限制。
In one embodiment, the
在一個實施例中,開關控制單元304用於控制P-MOSFET 308的GATE電壓,從而在負載上產生方波脈衝,這個脈衝的平均值為設定值,從而實現了固定電壓輸出。
In one embodiment, the
在一個實施例中,開關控制單元304實現為方波產生電路,實現的結構如圖4所示,其中開關控制單元304可以包括:跟隨器402、斜波信號生成器404、振盪器406、參考信號生成器408以及比較器410。圖4所示的直流電源、負載以及P-MOSFET308與圖3所示的直流電源、負載以及P-MOSFET308具有類似的結構和功能,使用相同的參考標號進行標記,在此不再贅述。
In one embodiment, the
在一個實施例中,跟隨器402的輸入端連接到直流電源302的正極並且輸出端連接到斜波信號生成器404的第一輸入端,振盪器406的輸出端連接到斜波信號生成器404的第二輸入端,斜波信號生成器404的輸出端連接到比較器410的正極輸入端,參考信號生成器408的輸出端連接到比較器410的負極輸入端,比較器410的輸出端連接到P-MOSFET 308的閘極。
In one embodiment, the input terminal of the
振盪器406可以用於生成週期為T的時鐘信號(CLK)並且在每個時鐘的上升沿產生同週期的斜波信號重置脈衝信號;斜波信號生成器404可以用於在斜波信號重置脈衝信號為高位準時將斜波信號放電到0,而在斜波信號重置脈衝信號為低位準時生成斜波信號Vramp並將生成的斜波信號Vramp直接傳送到比較器410;比較器410可以用於通過比較接收到的斜波信號Vramp和由參考信號生成器408產生的基準參考信號Vref來生成PWM信號,以控制P-MOSFET 308。
The
圖5示出了根據本發明實施例的圖4所示的開關控制單元中的多個信號的時序波形圖,其中CLK是週期為T的方波信號,Reset Pulse是通過CLK產生的同週期的斜波信號重置脈衝信號,Vramp為固定斜波信號,Vref為基準參考信號,PWM為產生的控制P-MOSFET 308 GATE的方波信號。從圖5中可以看到,通過Vramp和Vref的比較可以產生固定的方波PWM。
FIG5 shows a timing waveform diagram of multiple signals in the switch control unit shown in FIG4 according to an embodiment of the present invention, wherein CLK is a square wave signal with a period of T, Reset Pulse is a ramp signal reset pulse signal with the same period generated by CLK, Vramp is a fixed ramp signal, Vref is a reference signal, and PWM is a square wave signal generated to control the P-
具體地,在每個時鐘週期T開始時,斜波信號生成器404由於斜波信號重置脈衝信號是高位準而將輸出降為0,此時PWM信號翻轉為低位準並
且P-MOSFET開啟;當所述斜波信號重置脈衝信號變為低位準時,斜波信號生成器404開始生成斜波信號Vramp,在斜波信號Vramp等於基準參考信號Vref時,PWM信號翻轉為高位準並且P-MOSFET 308關斷。
Specifically, at the beginning of each clock cycle T, the
圖6示出了根據本發明實施例的開關控制單元304的電路示意圖。如圖6所示,跟隨器402可以包括:運算放大器601、由輸入P-MOSFET 602和輸出P-MOSFET 603形成的P-MOSFET電流鏡中的輸入P-MOSFET 602、N型金屬氧化物半導體場效應電晶體(N-MOSFET)跟隨器604、電阻605,其中,運算放大器601的正極輸入端連接到直流電源302並且負極輸入端連接到所述電阻605的第一端,電阻605的第二端接地,N-MOSFET跟隨器604的閘極連接到運算放大器601的輸出端、源極連接到電阻605的第一端、並且汲極連接到P-MOSFET電流鏡的輸入P-MOSFET 602。
FIG6 shows a circuit diagram of the
斜波信號生成器404包括電流鏡的輸出P-MOSFET 603、第一電容606,其中,第一電容606的第一端連接到輸出P-MOSFET 603並且第一電容606的第二端接地,斜波信號生成器404生成的斜波電壓Vramp為第一電容606上的電壓,第一電容606與斜波信號重置脈衝開關607並聯連接,當斜波信號重置脈衝信號為高位準時,斜波信號重置脈衝開關閉合以使得第一電容606放電,當斜波信號重置脈衝信號為低位準時,斜波信號重置脈衝開關斷開,從而通過電流鏡給第一電容606充電。
The
具體地,當振盪器的一個時鐘週期開始時,斜波信號重置脈衝信號為高位準,此時斜波信號重置脈衝開關607閉合使得第一電容606上的所有電荷被放掉,同時PWM翻轉為低位準,開啟P-MOSFET 308,而後開始通過電阻605產生電流I,電流I通過鏡像電流鏡的輸入P-MOSFET 602、輸出P-MOSFET 603給第一電容606充電,斜波電壓Vramp即為第一電容606上的電壓,當斜波電壓Vramp達到參考電壓Vref時,比較器410輸出的PWM信號翻轉以關斷P-MOSFET 308,隨後重複之前的週期過程(見圖5)。比較器410通過比較直流電壓VDC產生的Vramp和Vref,在輸出產生了平均值為目標值的方波PWM信號。這裡的PWM的占空比(duty cycle)的精度決定了Vtarget的精度。
Specifically, when a clock cycle of the oscillator starts, the ramp signal reset pulse signal is at a high level. At this time, the ramp signal reset
令輸出目標平均電壓為Vtarget,已知: Let the output target average voltage be Vtarget, given that:
根據公式(1)和(2)可以看出,通過適當設置第一電容、時鐘週期T、參考電壓Vref和電阻,可以獲得期望的目標平均電壓Vtarget。 According to formulas (1) and (2), the desired target average voltage Vtarget can be obtained by properly setting the first capacitor, clock cycle T, reference voltage Vref and resistor.
在一個實施例中,由參考信號生成器生成的參考電壓Vref具有固定電壓值。 In one embodiment, the reference voltage Vref generated by the reference signal generator has a fixed voltage value.
然而,由於斜波信號Vramp的產生受跟隨器402的誤差、電流鏡的輸入P-MOSFET 602和輸出P-MOSFET 603的誤差、以及電阻605和第一電容606的絕對值偏差的影響,它的變化範圍很廣,有+/-50%以上的變化量。如果基準參考電壓Vref是一個固定電壓,那麼斜波信號Vramp的大的變化範圍將導致比較器410輸出的PWM信號的占空比也有一樣的變化範圍,從而導致PWM輸出信號的精度很差。為了得到高精度的PWM輸出信號以及為了提高輸出精度,在一個實施例中,基準參考電壓Vref可以不是固定電壓。在一個實施例中,參考信號生成器408的電路可以通過複用斜波信號生成器404的電路,從而使得二者的偏差量完全跟隨且一致。在一個實施例中,參考信號生成器408可以週期性地刷新參考電壓。
However, since the generation of the ramp signal Vramp is affected by the error of the
圖7示出了根據本發明實施例的圖4所示的開關控制單元的另一電路示意圖,其中參考信號生成器408的電路複用斜波信號生成器404的部分電路和組件。圖7所示的直流電源、負載以及P-MOSFET308與圖3或圖4所示的直流電源、負載以及P-MOSFET308具有類似的結構和功能,使用相同的參考標號進行標記,在此不再贅述。此外,圖7所示的運算放大器、電流鏡的輸入P-MOSFET 602和輸出P-MOSFET 603、N-MOSFET跟隨器604、電阻605、第一電容606與圖6所示的運算放大器、電流鏡的輸入P-MOSFET 602和輸出P-MOSFET 603、N-MOSFET跟隨器604、電阻605、第一電容606具有類似的結
構和功能,使用相同的參考標號進行標記,在此不再贅述。
FIG7 shows another circuit diagram of the switch control unit shown in FIG4 according to an embodiment of the present invention, wherein the circuit of the
如圖7所示,參考信號生成器408包括第一選通器701、第二電容703、以及參考信號重置脈衝開關704。第二電容703的第一端通過第一選通器701連接到電流鏡的輸出P-MOSFET 603且第二端接地,並且第二電容703與參考信號重置脈衝開關704並聯連接,以通過由參考電壓重置脈衝信號(Vref Reset Pulse)控制參考信號重置脈衝開關704的斷開與閉合來實現對第二電容703的充放電。
As shown in FIG7 , the
在一個實施例中,第二電容703的放電信號為參考電壓重置脈衝信號為高位準。具體地,當所述參考信號重置脈衝信號為高位準時,參考信號重置脈衝開關704閉合以使得第二電容703被放電,當所述參考信號重置脈衝信號為低位準時,參考信號重置脈衝開關704斷開,通過電流鏡給第二電容703充電。
In one embodiment, the discharge signal of the
如圖7所示,斜波信號生成器還包括第二選通器702,斜波信號生成器的第一電容606通過第二選通器702連接到電流鏡的輸出P-MOSFET 603。針對負載的目標設定電壓Vtarget通過第一選通器701輸入到跟隨器的運算放大器601的正極輸入端,而直流電壓VDC通過第二選通器702輸入到跟隨器的運算放大器601的正極輸入端。
As shown in FIG7 , the ramp signal generator further includes a
圖7所示的電路結構的工作原理是:首先在第一個時鐘週期T初始,產生放電信號,即,參考電壓重置脈衝信號(Vref Reset Pulse)變為高位準,第二電容703上的電荷放光。然後第一選通器701閉合,選擇Vtarget電壓,Vtarget電壓被選通後,通過跟隨器在電阻605上產生第一電流I1,電流鏡將第一電流I1送入到第二電容703上以對第二電容703進行充電,當該時鐘週期結束時,充電電流被關閉,第一選通器701打開,此時第二電容703上產生電壓Vref,而後Vref被保持在第二電容703上。在一個實施例中,在第一個時鐘週期T初始,斜波信號重置脈衝信號也變為高位準,用於對第一電容606進行放電。
The working principle of the circuit structure shown in FIG7 is as follows: first, at the beginning of the first clock cycle T, a discharge signal is generated, that is, the reference voltage reset pulse signal (Vref Reset Pulse) becomes high level, and the charge on the
第一選通器701被打開的同時第二選通器702閉合(此時進入新的時鐘週期T),選擇直流電源電壓VDC,VDC電壓被選通,通過跟隨器在電阻
605上產生第二電流I2,電流鏡將第二電流I2送入第一電容606上以對第一電容606進行充電以產生斜波信號Vramp,所生成的斜波信號Vramp和基準電壓信號Vref一起送入比較器以產生PWM方波,從而控制P-MOSFET的GATE電壓,等該時鐘週期T期滿,第一電容606上的電荷被斜波信號重置脈衝信號放電,而後繼續定時下一時鐘週期T以重複充電的過程以產生下一個方波。
The
當實現了n個時鐘週期T的對第一電容606的充放電後關閉第二選通器702並且打開第一選通器701,同時第二電容703上的電荷被參考信號重置脈衝信號放掉,然後重新對第二電容703進行充電產生新的Vref,再然後重複先前的過程在新的時鐘週期對第一電容606進行充放電。換言之,基準參考信號Vref的刷新週期為(1+n)T,其中n是正整數。n的取值可以取決於工藝水準,本文對此不做限制。
After the
圖8示出了根據本發明實施例的圖7的所示的開關控制單元的實現時序圖。 FIG8 shows a timing diagram of the implementation of the switch control unit shown in FIG7 according to an embodiment of the present invention.
如圖8所示,當電源電壓達到一定要求即Power Good(pg)信號為高位準時,開始第一時鐘週期T,在第一時鐘週期T開始時,參考信號重置脈衝信號為高位準,此時參考信號重置脈衝開關704閉合以對第二電容703放電,此時第一選通器701閉合;在參考信號重置脈衝信號變為低位準時,參考信號重置脈衝開關704斷開以開始對第二電容703進行充電,當第一時鐘週期T結束時斷開第一選通器701,此時產生保持在第二電容703上的第一參考電壓。
As shown in FIG8 , when the power supply voltage reaches a certain requirement, that is, the Power Good (pg) signal is at a high level, the first clock cycle T starts. At the beginning of the first clock cycle T, the reference signal reset pulse signal is at a high level. At this time, the reference signal reset
第二選通器702在第一選通器701斷開時(即第二時鐘週期開始時)閉合以選通直流電源電壓VDC,同時斜波電壓重置脈衝信號變為高位準,此時斜波信號重置脈衝開關607閉合以對第一電容606放電,隨後在斜波信號重置脈衝信號變為低位準時對第一電容606進行充電,所述斜波信號生成器將根據第一電容606上的電壓生成的斜波信號Vramp送入比較器以與第一參考電壓進行比較,進而產生PWM方波信號,而後第二選通器702保持閉合n個時鐘週期T以繼續n個時鐘週期的對第一電容606的充放電,即產生n個週期的方波PWM信號。
When the
在第n+1個時鐘週期開始時斷開第二選通器702同時閉合第一選
通器701以重複上述過程將第一參考電壓刷新為第二參考電壓,並重複上述方波PWM信號的生成過程。
At the beginning of the n+1th clock cycle, the
根據上述實施例生成的方波PWM信號的占空比計算如下: The duty cycle of the square wave PWM signal generated according to the above embodiment is calculated as follows:
當Vramp=Vref: When Vramp=Vref:
可以看出,通過圖7和8所示的實施例實現的架構,PWM的占空比ton/T不受電阻R和電容C的影響,因此精度更高。如此,這個架構實現了高精度的Vtarget電壓的產生。 It can be seen that through the architecture implemented by the embodiments shown in Figures 7 and 8, the PWM duty cycle ton/T is not affected by the resistor R and the capacitor C, so the accuracy is higher. In this way, this architecture realizes the generation of high-precision Vtarget voltage.
根據本發明提供的上述實施例,提供了一種結構簡單且能很好控制輸出精度的開環脈寬調整電路,它不需要複雜的回饋環路和外圍器件,極大簡化了整個應用結構。可以理解,本發明的上述實施例可以在任何用於將直流高電壓轉變成低電壓的PWM系統中實現。 According to the above embodiment provided by the present invention, an open-loop pulse width adjustment circuit with a simple structure and good control of output accuracy is provided. It does not require a complex feedback loop and peripheral devices, greatly simplifying the entire application structure. It can be understood that the above embodiment of the present invention can be implemented in any PWM system for converting a DC high voltage into a low voltage.
上文中提到了“一個實施例”、“另一實施例”、“又一實施例”,然而應理解,在各個實施例中提及的特徵並不一定只能應用於該實施例,而是可能用於其他實施例。一個實施例中的特徵可以應用於另一實施例,或者可以被包括在另一實施例中。 The above mentioned "one embodiment", "another embodiment", and "yet another embodiment", but it should be understood that the features mentioned in each embodiment are not necessarily applicable only to that embodiment, but may be used in other embodiments. The features in one embodiment may be applied to another embodiment, or may be included in another embodiment.
應理解,上文中提到的器件和電路的數字下標也是為了敘述和引用的方便,並不存在次序上的先後關係。 It should be understood that the numerical subscripts of the devices and circuits mentioned above are for the convenience of description and reference, and there is no order of precedence.
以上參考本發明的具體實施例對本發明進行了描述,但本領域技術人員應能理解,上述實施例均是示例性而非限制性的。在不同實施例中出現的不同技術特徵可以進行組合,以取得有益效果。本領域技術人員在研究圖式、說明書及申請專利範圍的基礎上,應能理解並實現所揭示的實施例的其他變化的 實施例。請求項中的任何圖式標記均不應被理解為對保護範圍的限制。請求項中出現的多個部分的功能可以由一個單獨的硬體或軟體模組來實現。某些技術特徵出現在不同的從屬請求項中並不意味著不能將這些技術特徵進行組合以取得有益效果。 The present invention is described above with reference to specific embodiments of the present invention, but those skilled in the art should understand that the above embodiments are exemplary rather than restrictive. Different technical features appearing in different embodiments can be combined to achieve beneficial effects. Based on studying the drawings, instructions and the scope of the patent application, those skilled in the art should be able to understand and implement other variations of the disclosed embodiments. Any diagrammatic mark in the claim should not be construed as a limitation on the scope of protection. The functions of multiple parts appearing in the claim can be implemented by a single hardware or software module. The appearance of certain technical features in different subordinate claims does not mean that these technical features cannot be combined to achieve beneficial effects.
302:直流電源 302: DC power supply
306:負載 306: Load
308:P型金屬氧化物半導體場效應電晶體(P-MOSFET) 308: P-type metal oxide semiconductor field effect transistor (P-MOSFET)
400:產生高精度輸出電壓的內部結構構圖 400: Internal structure diagram for generating high-precision output voltage
402:跟隨器 402: Follower
404:斜波信號生成器 404: Ramp signal generator
406:振盪器 406: Oscillator
408:參考信號生成器 408: Reference signal generator
410:比較器 410: Comparator
PWM:脈寬調變 PWM: Pulse Width Modulation
VDC:直流電壓 V DC : DC voltage
VR:輸出電壓 VR: output voltage
Vramp:斜波信號(斜波電壓) Vramp: Ramp signal (ramp voltage)
Vref:基準參考信號電壓 Vref: reference signal voltage
Claims (13)
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| CN2023106161951 | 2023-05-29 | ||
| CN202310616195.1A CN116599506A (en) | 2023-05-29 | 2023-05-29 | PWM system |
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| TWI868931B true TWI868931B (en) | 2025-01-01 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140132236A1 (en) * | 2012-11-15 | 2014-05-15 | Microchip Technology Incorporated | Slope Compensation Module |
| US9356594B2 (en) * | 2013-06-28 | 2016-05-31 | Solum Co., Ltd. | Switched-mode power supply using variable bias current |
| US20180351455A1 (en) * | 2017-02-24 | 2018-12-06 | Texas Instruments Incorporated | Fixed frequency dc-dc converter |
| US20210351178A1 (en) * | 2013-02-07 | 2021-11-11 | John Wood | Double-sided vertical power transistor structure |
| TWI750095B (en) * | 2021-05-25 | 2021-12-11 | 致新科技股份有限公司 | Motor controller |
| WO2022075150A1 (en) * | 2020-10-07 | 2022-04-14 | ソニーセミコンダクタソリューションズ株式会社 | Signal line driving circuit |
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2023
- 2023-05-29 CN CN202310616195.1A patent/CN116599506A/en active Pending
- 2023-09-19 TW TW112135749A patent/TWI868931B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140132236A1 (en) * | 2012-11-15 | 2014-05-15 | Microchip Technology Incorporated | Slope Compensation Module |
| US20210351178A1 (en) * | 2013-02-07 | 2021-11-11 | John Wood | Double-sided vertical power transistor structure |
| US9356594B2 (en) * | 2013-06-28 | 2016-05-31 | Solum Co., Ltd. | Switched-mode power supply using variable bias current |
| US20180351455A1 (en) * | 2017-02-24 | 2018-12-06 | Texas Instruments Incorporated | Fixed frequency dc-dc converter |
| WO2022075150A1 (en) * | 2020-10-07 | 2022-04-14 | ソニーセミコンダクタソリューションズ株式会社 | Signal line driving circuit |
| TWI750095B (en) * | 2021-05-25 | 2021-12-11 | 致新科技股份有限公司 | Motor controller |
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| Publication number | Publication date |
|---|---|
| CN116599506A (en) | 2023-08-15 |
| TW202448124A (en) | 2024-12-01 |
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