TWI868519B - Substrate processing device, substrate support, method for manufacturing semiconductor device, substrate processing method and program - Google Patents

Abstract

Provided is a technology having the following structure: A substrate support having a first support portion and a second support portion, wherein the first support portion has a plurality of first pillars for supporting a plurality of substrates at intervals in the vertical direction, and the second support portion is disposed between the plurality of substrates supported by the first support portion, and has a plurality of second pillars for supporting a plurality of plates having through holes in the center; A processing chamber for accommodating the substrate support; and A gas supply portion for supplying gas to the processing chamber.

Description

Substrate processing device, substrate support, method for manufacturing semiconductor device, substrate processing method and program

This case is about a substrate processing device, a substrate support, a method for manufacturing a semiconductor device, and a substrate processing method and program.

As a substrate processing device used in the manufacturing process of semiconductor devices, there is a so-called vertical device in which a loading interlock chamber (lower chamber) is provided below a process tube (reaction tube). Such a substrate processing device is configured to raise and lower a wafer boat (substrate support) supporting a substrate between the process tube and the loading interlock chamber, and to perform a predetermined process on the substrate while the wafer boat is accommodated in the process tube (for example, refer to patent document 1). Prior art document Patent document

Patent document 1: Japanese Patent Application Publication No. 2002-368062

(The problem that the invention is trying to solve)

This case is to provide a technology that can improve the efficiency of substrate processing. (Means for solving the problem)

According to one aspect of the present invention, a technology having the following structure is provided: A substrate support having a first support portion and a second support portion, wherein the first support portion has a plurality of first pillars for supporting a plurality of substrates at intervals in the vertical direction, and the second support portion is disposed between the plurality of substrates supported by the first support portion, and has a plurality of second pillars for supporting a plurality of plates having through holes in the center; A processing chamber for accommodating the substrate support; and A gas supply portion for supplying gas to the processing chamber. [Effect of the invention]

According to this proposal, the efficiency of substrate processing can be improved.

＜One form of this case＞

Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 1 to 10. In addition, the drawings used in the following description are all schematic, and the relationship between the dimensions of the elements and the ratio of the elements shown in the drawings are not necessarily consistent with the actual ones. Furthermore, the relationship between the dimensions of the elements and the ratio of the elements are not necessarily consistent between multiple drawings.

(1) Structure of substrate processing apparatus The substrate processing apparatus of this embodiment is used in the manufacturing process of semiconductor devices, and is configured as a vertical substrate processing apparatus that processes a plurality of substrates (e.g., 5 substrates) to be processed. As the substrate to be processed, for example, there can be cited a semiconductor wafer substrate (hereinafter referred to as a "wafer") to be manufactured into a semiconductor integrated circuit device (semiconductor device).

As shown in FIG. 1 , the substrate processing apparatus of the present embodiment is provided with a vertical processing furnace 1. The vertical processing furnace 1 has a heater 10 as a heating portion (heating mechanism, heating system). The heater 10 is cylindrical and is vertically mounted on the installation floor of the substrate processing apparatus by being supported by a heater base (not shown) as a holding plate. The heater 10 also functions as an activation mechanism (excitation portion) that activates (excites) gas with heat.

On the inner side of the heater 10, a reaction tube 20 constituting a reaction container (processing container) is arranged concentrically with the heater 10. The reaction tube 20 has a double tube structure, and has an inner tube (inner tube) 21 and an outer tube (outer tube) 22 concentrically surrounding the inner tube 21. The inner tube 21 and the outer tube 22 are respectively made of heat-resistant materials such as quartz ( _SiO2 ) or silicon carbide (SiC). The inner tube 21 is formed into a cylindrical shape with an upper end and a lower end being open. The outer tube 22 is formed into a cylindrical shape with an upper end being closed and a lower end being open. The upper end of the inner tube 21 extends to the vicinity of the top of the outer tube 22.

The processing chamber 23 for processing the wafer 200 is formed in the hollow portion of the inner tube 21. The processing chamber 23 is configured to accommodate the wafer 200 in a state of being arranged from one end side (lower side) toward the other end side (upper side) in the processing chamber 23. The area where a plurality of wafers 200 are arranged in the processing chamber 23 is also referred to as a substrate arrangement area (wafer arrangement area). In addition, the direction in which the wafers 200 are arranged in the processing chamber 23 is also referred to as a substrate arrangement direction (wafer arrangement direction).

A lower chamber (load interlocking chamber) 30 is provided below the outer tube 22 (reaction tube 20). The lower chamber 30 is made of a metal material such as stainless steel (SUS), and has an inner diameter that is substantially the same as that of the inner tube 21. It is formed into a cylindrical shape (a cylindrical shape without a bottom) with an opening at the upper end and a plug at the lower end. The lower chamber 30 is arranged to communicate with the inner tube 21. A flange 31 is provided at the upper end of the lower chamber 30. The flange 31 is made of a metal material such as SUS. The upper end of the flange 31 is respectively engaged with the lower end of the inner tube 21 and the outer tube 22, and is configured to support the inner tube 21 and the outer tube 22, that is, the reaction tube 20. The inner tube 21 and the outer tube 22 are installed vertically similarly to the heater 10. A transfer chamber (load-lock chamber) 33 is formed in the hollow portion (closed space) of the lower chamber 30 and functions as a transfer space for transferring the wafer 200.

In the processing chamber 23, a nozzle 24 as a gas supply unit is provided to pass through the inner tube 21 and the outer tube 22. The nozzle 24 is made of a heat-resistant material such as quartz or SiC, and is formed into an L-shaped long nozzle. The nozzle 24 is connected to a gas supply pipe 51. The gas supply pipe 51 is connected to two gas supply pipes 52 and 54, and is configured to supply a plurality of types of gases, here two types of gases, into the processing chamber 23. The gas supply pipes 51, 52, 54 and the gas supply pipes 53, 55, 56 described later are respectively made of metal materials such as SUS.

The gas supply pipe 52 is provided with a mass flow controller (MFC) 52a of a flow controller (flow control unit) and a valve 52b of an on-off valve in order from the upstream side of the gas flow. The gas supply pipe 53 is connected to the downstream side of the valve 52b of the gas supply pipe 52. The gas supply pipe 53 is provided with an MFC 53a and a valve 53b in order from the upstream side of the gas flow.

The gas supply pipe 54 is provided with an MFC 54a and a valve 54b in order from the upstream side of the gas flow. The gas supply pipe 55 is connected to the downstream side of the valve 54b of the gas supply pipe 54. The gas supply pipe 55 is provided with an MFC 55a and a valve 55b in order from the upstream side of the gas flow.

The lower side wall of the lower chamber 30 is connected to a gas supply pipe 56. The gas supply pipe 56 is provided with an MFC 56a and a valve 56b in order from the upstream side of the gas flow.

The nozzle 24 connected to the front end of the gas supply pipe 51 is arranged in the space between the inner wall of the inner tube 21 and the wafer 200, and extends from the lower area of the processing chamber 23 to the upper area (standing upward in the arrangement direction of the wafer 200) along the inner wall of the inner tube 21. That is, the nozzle 24 is arranged on the side of the wafer arrangement area where the wafer 200 is arranged horizontally surrounding the wafer arrangement area. The area is along the wafer arrangement area. A gas supply hole 24a for supplying gas is provided on the side of the nozzle 24. The gas supply hole 24a is opened toward the center of the reaction tube 20 and can supply gas toward the wafer 200. A plurality of gas supply holes 24a are provided from the bottom to the top of the reaction tube 20 (nozzle 24) at a position opposite to the wafer 200 supported by a substrate support described later.

The raw material gas (raw material) of the first processing gas (first film-forming gas) can be supplied from the gas supply pipe 52 into the processing chamber 23 via the MFC 52a, the valve 52b, the gas supply pipe 51, and the nozzle 24. The so-called raw material gas is a raw material in a gaseous state, for example, a gas obtained by vaporizing a raw material in a liquid state at room temperature and pressure, or a raw material in a gaseous state at room temperature and pressure.

The reaction gas (reactant) of the second processing gas (second film-forming gas) can be supplied from the gas supply pipe 54 into the processing chamber 23 via the MFC 54 a , the valve 54 b , the gas supply pipe 51 , and the nozzle 24 .

The inert gas can be supplied from the gas supply pipes 53 and 55 into the processing chamber 23 via the MFCs 53a and 55a, the valves 53b and 55b, the gas supply pipes 51, 52 and 54, and the nozzle 24. The inert gas functions as a purification gas, a dilution gas, or a carrier gas.

The inert gas can be supplied from the gas supply pipe 56 to the lower chamber 30 via the MFC 56a and the valve 56b. The inert gas functions as a purified gas.

The first processing gas supply system (first processing gas supply unit) is mainly composed of the gas supply pipe 52, MFC52a, and valve 52b. It is also conceivable to include the gas supply pipe 51 and nozzle 24 in the first processing gas supply system. The second processing gas supply system (second processing gas supply unit) is mainly composed of the gas supply pipe 54, MFC54a, and valve 54b. It is also conceivable to include the gas supply pipe 51 and nozzle 24 in the second processing gas supply system. The first inert gas supply system (first inert gas supply unit) is mainly composed of the gas supply pipes 53, 55, MFC53a, 55a, and valves 53b, 55b. It is also conceivable that the gas supply pipes 51, 52, 54 and the nozzle 24 are included in the first inert gas supply system. The second inert gas supply system (second inert gas supply unit) is mainly constituted by the gas supply pipe 56, the MFC 56a, and the valve 56b.

At the lower end of the outer tube 22, a pumping portion 26 is formed as an exhaust gas buffer in a manner surrounding the outer tube 22. The pumping portion 26 is arranged below the heater 10 surrounding the outer tube 22. The pumping portion 26 is connected to the exhaust gas flow path 25 in the annular space between the inner tube 21 and the outer tube 22, and is configured to temporarily retain the gas flowing through the exhaust gas flow path 25.

Below the inner tube 21, there is an opening 27 for discharging gas from the inner side of the inner tube 21 and the transfer chamber 33 to the suction part 26. A plurality of openings 27 are provided along the circumferential direction of the inner tube 21 at a position opposite to the suction part 26 and as close as possible to the lower chamber 30.

The suction part 26 is connected to an exhaust pipe 61 for exhausting the gas retained in the suction part 26. The exhaust pipe 61 is connected to a vacuum pump 64 as a vacuum exhaust device via a pressure sensor 62 as a pressure detector (pressure detection part) for detecting the pressure in the processing chamber 23 and an APC (Auto Pressure Controller) valve 63 as a pressure regulator (pressure adjustment part). The APC valve 63 is configured to perform vacuum exhaust and stop vacuum exhaust in the processing chamber 23 by opening and closing when the vacuum pump 64 is activated. Furthermore, when the vacuum pump 64 is activated, the valve opening is adjusted according to the pressure information detected by the pressure sensor 62 to adjust the pressure in the processing chamber 23. The exhaust system, that is, the exhaust line, is mainly composed of the exhaust pipe 61, the APC valve 63, and the pressure sensor 62. It is also conceivable that the exhaust flow path 25, the suction unit 26, and the vacuum pump 64 are included in the exhaust system.

A substrate loading/unloading port 32 is provided on the upper side wall of the lower chamber 30. Through the substrate loading/unloading port 32, the wafer 200 is moved in and out of the transfer chamber 33 by a transfer robot (not shown). The wafer 200 is loaded into and removed from the substrate supporter described later in the transfer chamber 33.

The substrate support is configured to support a plurality of wafers 200 (e.g., 5 wafers) in a horizontal position and in a state where the centers of the wafers 200 are aligned with each other, and arranged in multiple stages in a vertical direction, that is, arranged with intervals. The substrate support is composed of at least a substrate support portion (first support portion) 41 for supporting the wafer 200 and a partition support portion (second support portion) 46 for supporting a partition (plate) 46d. The substrate support is made of a heat-resistant material such as quartz or SiC. A heat insulating portion 42 is provided at the bottom of the substrate support, which supports the wafers 200 in multiple stages in a horizontal position, and is made of a heat insulating plate such as quartz or SiC. The heat insulating plate may be covered with a cover made of a heat resistant material such as quartz or SiC. The heat insulating portion 42 may be formed of a heat insulating tube made of a heat resistant material such as quartz or SiC.

As shown in FIG. 2 , the substrate support portion 41 is configured to support a plurality of pillars (first pillars) 41c on a base portion 41a, and to support a plurality of wafers 200 at predetermined intervals in the vertical direction by substrate holding members (supporting portion) 41d mounted on the plurality of pillars 41c at equal intervals. The substrate support portion 41 is configured to include a base portion 41a, pillars 41c, and substrate holding members 41d in an integrated or separate configuration.

As shown in Fig. 2, the partition support part 46 is a plurality of partitions 46d fixed at predetermined intervals to a support (second support) 46c supported between a base 46a and a top plate 46b. The partition support part 46 is composed of a base 46a, a top plate 46b, a support 46c and a partition 46d in an integrated structure or in separate structures.

The plurality of wafers 200 supported by the substrate holding member 41d mounted on the support 41c are separated by the partitions 46d fixed (supported) at predetermined intervals in the vertical direction on the support 46c supported by the partition support portion 46. Here, the partition 46d is arranged on either or both of the upper and lower sides of the wafer 200.

The predetermined intervals of the plurality of wafers 200 placed on the substrate support 41 are the same as the upper and lower intervals of the partitions 46d fixed to the partition support 46. The intervals of the partitions 46 arranged in multiple stages are set according to the surface area of the wafers 200. For example, when the surface area of the processed wafer 200 is 50 to 200 times (e.g., 100 times) that of the unprocessed wafer 200, the intervals of the partitions 46d are set to 10 to 60 mm (e.g., about 20 mm). By setting it in this way, the gas can be supplied to the center of the wafer, which can help the uniformity of the film.

The partition (ring plate) 46d is formed in a ring shape having a through hole (hole, cavity) 46e in the center as shown in FIG3. The diameter of the through hole 46e (the inner diameter of the partition 46d) is set to be 1/6 to 3/4 relative to the diameter of the wafer 200. In this way, the processing can be performed without affecting the flow of gas. The diameter (outer diameter) of the partition 46d is formed to be larger than the diameter of the wafer 200 as shown in FIG4. The diameter of the partition 46d is set to be 1.03 to 1.30 times the diameter of the wafer 200. For example, when the diameter of the wafer is 300 mm, the diameter of the partition 46d is 310 to 400 mm.

In this embodiment, in order to make the distance between the partition 46d of the partition support part 46 and the wafer 200 (substrate holding member 41d of the substrate support part 41) variable, the partition support part 46 and the substrate support part 41 are respectively provided as independent structures, and a structure (variable structure) is provided in which one or both of the partition support part 46 and the substrate support part 41 can be driven in the up and down direction. In this way, the wafer 200 placed on the substrate holding member 41d can be placed on the partition 46d, or the wafer 200 placed on the partition 46d can be placed on the substrate holding member 41d. In addition, the wafer 200 can be moved to an arbitrary height, so that the film formation distribution can be adjusted.

In the spacer support portion 46 and the substrate support portion 41 that move in the vertical direction relative to each other, it is necessary to prevent the spacer 46 d of the spacer support portion 46 from colliding with the pillar 41 c and the substrate holding member 41 d of the substrate support portion 41 .

In order to avoid collision with the pillar 41c and the substrate holding member 41d of the substrate supporting portion 41, as shown in Fig. 3, a plurality of notches 46f having a shape similar to the projection of the pillar 41c and the substrate holding member 41d from above are formed in the partition plate 46d. That is, the notch 46f formed in the partition plate 46d shown in Fig. 3 includes notches as the first recessed portion configured to avoid collision with the pillar 41c and notches as the second recessed portion configured to avoid collision with the substrate holding member 41d (that is, to accommodate the substrate holding member 41d) in addition to the notches as the first recessed portion configured to avoid collision with the pillar 41c.

As shown in Fig. 5, the top plate 46b and the partition plate 46d constituting the partition plate support portion 46 are respectively formed with a notch portion 46f. Thus, even when the substrate support portion 41 is formed as an integral structure, the partition plate support portion 46 can be provided from the upper and lower directions for the substrate support portion 41.

As shown in FIG6 , a gap is formed between the partition 46d and the pillar 41c. The dimensions of each part of the notch portion 46f formed in the partition 46d are set to be 2 to 4 mm larger than the dimensions when the pillar 41c and the substrate holding member 41d are projected from directly above. If it is narrower than 2 mm, the partition 46d may come into contact with the pillar 41c or the substrate holding member 41d. On the other hand, if it is larger than 4 mm, the outflow and inflow of gas from the gap between the partition 46d and the pillar 41c or the substrate holding member 41d to the top or bottom will increase, and the flow of gas will be disturbed, and there is a risk that the control of the flow of gas on the surface of the wafer 200 held on the partition 46d may be disturbed.

By setting the relationship between the dimensions of each part of the notch 46f and the dimensions of the support 41c to the above relationship, the cross section of the gas flow path between the partition 46d and the support 41c can be reduced. In this way, the inflow and outflow of gas in the space above and below the partition 46d can be reduced, and the flow of gas on the surface of the wafer 200 held by the partition 46d can be controlled with high precision.

The height position of the wafer 200 can be set to at least two. The first is the height of the wafer 200 when it is transported as shown in FIG. 2. The second is the height during the process as shown in FIG. 1. The height during transport is the height when it is placed on the substrate holding member 41d. The height during the process is the height when it is directly placed on the partition 46d.

As shown in Figures 2 and 7, when the wafer 200 is loaded into the substrate support and removed from the substrate support (when the wafer 200 is transported) through the substrate load-in/load-out port 32, a plurality of partitions 46d are respectively arranged below the substrate holding member 41d of the substrate supporting portion 41 (at the height between the substrate holding member 41d and the substrate holding member 41d) in such a manner that the partitions 46d do not contact the wafer 200 when the wafer 200 is loaded into the substrate supporting portion 41.

As shown in FIG. 1 and FIG. 8 , after the wafer 200 is loaded, the substrate holding member 41 d is moved to a position lower than the partition 46 d, so that the periphery of the wafer 200 is supported on the partition 46 d, thereby supporting the wafer 200. As shown in FIG. 1 and FIG. 8 , when the wafer 200 is processed, it is carried on the partition 46 d, and spatial shielding is performed for each wafer 200. Although the partition 46 d is set in a ring shape, the through hole 46 e is blocked by the wafer 200 contacting (directly carrying) the partition 46 d, so that spatial separation becomes possible.

For example, when the processing temperature is 400 to 800°C, the temperature of the partition 46d increases as the processing continues. When the wafer 200 is loaded, the temperature of the wafer 200 is low relative to the temperature of the partition 46d. Therefore, in order to prevent the wafer 200 from bending due to a rapid change in heat, after the temperature of the wafer 200 reaches -100 to 0°C of the processing temperature, the timing of changing the height position of the wafer 200 to directly carry on the partition 46d or directly place it on the partition 46d is set to be after the substrate support is configured to the position where the process can be started.

When the partition 46d carries the wafer 200, in order to prevent the partition 46d and the wafer 200 from sticking together due to film formation, for example, at least one protrusion of 0.1 to 3 mm may be provided on the partition 46d, specifically three points, as three-point support, and the distance between the back side of the wafer 200 and the partition 46d is set to 0.1 to 3 mm.

The heat insulating portion 42 provided at the lower portion of the partition support portion 46 is provided with a recessed portion similar to the notch portion 46f provided in the partition 46d in order to prevent collision with a portion (pillar 41c) of the substrate support portion 41 moving up and down.

When the base 41a and the support 41c of the substrate support 41 are formed as separate structures, the partition 46d may not have the notch 46f. For example, when the partition 46d is thick, the notch may not be provided but a conical pit may be provided.

The substrate support is supported by a rod 43. The rod 43 is connected to the bottom of the lower chamber 30 while maintaining the airtight state of the transfer chamber 33, and is further connected to the lifting and rotating mechanism (wafer boat elevator) 44 outside the lower chamber 30. The lifting and rotating mechanism 44 is configured to lift and lower the wafer 200 supported by the substrate support in the vertical direction between the processing chamber 23 and the transfer chamber 33 by lifting and lowering the substrate support. That is, the lifting and rotating mechanism 44 is configured as a transport device (transport mechanism) that transports the substrate support, that is, the wafer 200, between the processing chamber 23 and the transfer chamber 33. For example, when the lifting and rotating mechanism 44 performs an upward movement, the substrate support is lifted to the position (wafer processing position) in the processing chamber 23 shown in FIG. 1 , and when the lifting and rotating mechanism 44 performs a downward movement, the substrate support is lowered to the position (wafer transfer position) in the transfer chamber 33 shown in FIG. 2 . In addition, the lifting and rotating mechanism 44 is configured to rotate the wafer 200 by rotating the substrate support. The lifting and rotating mechanism 44 is a mechanism that drives the substrate support portion 41 in the up and down direction with respect to the partition support portion 46.

In addition, a cover 47 for closing the lower part of the reaction tube 20 may be provided near the upper end of the rod 43 and below the heat insulating portion 42. By providing the cover 47 to close the lower part of the reaction tube 20, it is possible to suppress the diffusion of the raw material gas or the reaction gas in the reaction tube 20 into the transfer chamber 33. In addition, the pressure control in the reaction tube 20 becomes easier, and the uniformity of the processing of the wafer 200 can be improved.

A temperature sensor 11 as a temperature detector is provided in the inner tube 21. The power supply to the heater 10 is adjusted according to the temperature information detected by the temperature sensor 11, thereby the temperature in the processing chamber 23 becomes the desired temperature distribution. The temperature sensor 11 is L-shaped like the nozzle 24 and is provided along the inner wall of the inner tube 21.

As shown in FIG9 , the controller 70 of the control unit (control means) is configured as a computer having a CPU (Central Processing Unit) 71, a RAM (Random Access Memory) 72, a memory device 73, and an I/O port 74. The RAM 72, the memory device 73, and the I/O port 74 are configured to exchange data with the CPU 71 via an internal bus 75. The controller 70 is connected to an input/output device 82 configured as a touch panel, etc., and an external memory device 81.

The memory device 73 is constituted by, for example, a flash memory, a HDD (Hard Disk Drive), etc. The memory device 73 stores a control program for controlling the operation of the substrate processing device, or a process recipe that records the procedures or conditions of the method for manufacturing the semiconductor device described later, etc. in a readable manner. The process recipe is a combination of processes (steps) of the method for manufacturing the semiconductor device described later that can be performed on the controller 70 to obtain a predetermined result as a program function. Hereinafter, the process recipe, control program, etc. are also collectively referred to as a program. In addition, the process recipe is also referred to as a recipe. When the term "program" is used in this specification, there is a case where it includes only the recipe unit, only the control program unit, or both of them. RAM72 is configured as a memory area (work area) for temporarily holding programs and data read by CPU71.

The I/O port 74 is connected to the above-mentioned MFC 52a to 56a, valves 52b to 56b, pressure sensor 62, APC valve 63, vacuum pump 64, heater 10, temperature sensor 11, lifting and rotating mechanism 44, etc.

The CPU 71 is configured to read out a control program from the memory device 73 and execute it, and read out a prescription from the memory device 73 according to input of an operation command from the input/output device 82. The CPU 71 is configured to control the flow rate adjustment operation of various gases by the MFCs 52a to 56a, the opening and closing operation of the valves 52b to 56b, the opening and closing operation of the APC valve 63 and the pressure adjustment operation by the APC valve 63 based on the pressure sensor 62, the start and stop of the vacuum pump 64, the temperature adjustment operation of the heater 10 based on the temperature sensor 11, the lifting and lowering operation of the substrate support by the lifting and rotating mechanism 44, the rotation and the rotation speed adjustment operation, etc. according to the contents of the read prescription.

The controller 70 can be constructed by installing the above-mentioned program stored in the external memory device 81 in a computer. The external memory device 81 is a semiconductor memory such as a magnetic tape, a disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, a USB memory, etc. The memory device 73 or the external memory device 81 is a recording medium that is readable by a computer. Hereinafter, these may also be collectively referred to as recording media. When the term recording medium is used in this specification, it may include only the memory device 73 alone, only the external memory device 81 alone, or both. In addition, the provision of the program to the computer may be carried out without using the external memory device 81, but by using communication means such as the Internet or a dedicated line.

(2) Substrate processing step An example of a substrate processing sequence, i.e., a film forming sequence, for forming a thin film on a wafer 200 as a substrate using the above-mentioned substrate processing apparatus is described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 70.

FIG. 10 is used here to explain a film forming process for forming a film on a wafer 200 by alternately supplying a raw material gas and a reaction gas. The film forming process (film forming sequence) shown in FIG. 10 is a process for forming a film on the wafer 200 by performing a predetermined number of cycles of supplying a raw material gas to the wafer 200 and supplying a reaction gas to the wafer 200 non-simultaneously.

When the term "wafer" is used in this specification, it means the wafer itself, or a stack of a wafer and a predetermined layer or film formed on the surface thereof. When the term "surface of the wafer" is used in this specification, it means the surface of the wafer itself, or the surface of a predetermined layer formed on the wafer. When it is stated in this specification that "a predetermined layer is formed on the wafer", it means forming a predetermined layer directly on the surface of the wafer itself, or forming a predetermined layer on a layer formed on the wafer. When the term "substrate" is used in this specification, it is synonymous with the term "wafer".

(Wafer filling: S110) Load a plurality of (e.g., 5) wafers 200 into the substrate support portion 41 of the substrate support (wafer filling). Specifically, in the transfer chamber 33, the wafer 200 is placed at a predetermined position of the substrate support portion 41 through the substrate carry-in/out port 32 while the placement position of the wafer 200 of the substrate support portion 41 is made to face the substrate carry-in/out port 32. Once one wafer 200 is loaded into the substrate support portion 41, the other wafers 200 are loaded into other wafer placement positions of the substrate support portion 41 while the vertical position of the substrate support is moved by the lifting and rotating mechanism 44. This action is repeated several times. Specifically, the wafer 200 is loaded while the substrate support is lowered. In addition, the substrate support is pre-equipped with a partition support part 46, so that the partition 46d is arranged in multiple stages along the wafer 200 at positions between adjacent wafers 200 when multiple wafers 200 are loaded and at positions below the lowest wafer 200. At this time, the wafer 200 loaded on the substrate support part 41 is heated by the partition support part 46.

(Wafer boat loading: S120) After the wafer 200 is loaded on the substrate support, as shown in FIG1 , the substrate support supporting the plurality of wafers 200 is lifted up by the lifting and rotating mechanism 44 and carried into the processing chamber 23 (wafer boat loading). At this time, the height position of the partition support portion 46 is adjusted so that the height position of the gas supply hole 24a is slightly higher than the surface of the wafer 200. In this way, the gas can be reliably supplied to the surface of each wafer 200.

(Pressure adjustment and temperature adjustment: S130) The processing chamber 23, i.e., the space where the wafer 200 is located, is evacuated (depressurized) by the vacuum pump 64 so that the desired pressure (vacuum degree) is achieved in the processing chamber 23. At this time, the pressure in the processing chamber 23 is measured by the pressure sensor 62, and the APC valve 63 is feedback-controlled based on the measured pressure information (pressure adjustment). Furthermore, the wafer 200 in the processing chamber 23 is heated by the heater 10 so that the desired processing temperature is achieved. At this time, the power supply to the heater 10 is controlled (temperature adjustment) based on the temperature information detected by the temperature sensor 11 so that the desired temperature distribution is achieved in the processing chamber 23. In addition, the substrate support 41 is lowered and the wafer 200 is placed on the partition 46d. In addition, the rotation of the wafer 200 caused by the lifting and rotating mechanism 44 is started. The operation of the vacuum pump 64, the heating and rotation of the wafer 200 are all continued until at least the processing of the wafer 200 is completed.

(Film forming process: S140) Then, the next two steps are carried out in sequence, namely, the raw material gas supply step (S141) and the reaction gas supply step (S143).

[Raw material gas supply step: S141] In this step, raw material gas is supplied to the wafer 200 in the processing chamber 23.

Specifically, valve 52b is opened to flow raw material gas into gas supply pipe 52. The raw material gas is regulated in flow rate by MFC52a and supplied into processing chamber 23 through gas supply pipe 51 and nozzle 24. The raw material gas supplied into processing chamber 23 rises into processing chamber 23, flows out from the upper end opening of inner tube 21 to exhaust flow path 25, flows down exhaust flow path 25, and is exhausted from exhaust pipe 61 through suction part 26. At this time, raw material gas is supplied to wafer 200. At this time, valves 53b and 55b are opened to flow inert gas into processing chamber 23 through gas supply pipes 51, 53, 55 and nozzle 24. Supply of inert gas may not be implemented. By exhausting the gas from the processing chamber 23 through the suction unit 26, the exhaust operation can be stabilized.

The processing conditions of this step are shown below as an example. Raw gas supply flow rate: 0.01~2slm, ideally 0.1~1slm Inert gas supply flow rate (per gas supply pipe): 0~10slm Each gas supply time: 0.1~120 seconds, ideally 0.1~60 seconds Processing temperature: 250~900℃, ideally 400~700℃ Processing pressure: 1~2666Pa, ideally 67~1333Pa.

In addition, the notation of a numerical range such as "1 to 2666 Pa" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "1 to 2666 Pa" means "1 Pa or more and 2666 Pa or less". The same applies to other numerical ranges.

By supplying a raw material gas containing Si and Cl to the wafer 200 under the above-mentioned conditions, for example, a Si-containing layer containing Cl having a thickness of, for example, less than one atomic layer to several atomic layers is formed on the outermost surface of the wafer 200 as the first layer. The Si-containing layer containing Cl is formed by chemical adsorption or physical adsorption of the raw material gas toward the surface of the wafer 200, chemical adsorption of a substance (SixCly) after a part of the raw material gas is decomposed, or accumulation of Si due to thermal decomposition of the raw material gas. The Si-containing layer containing Cl may be an adsorption layer (physical adsorption layer or chemical adsorption layer) of the raw material gas or SixCly, or may be a stack of Si containing Cl. In this specification, the Si-containing layer containing Cl is also referred to as the Si-containing layer for short.

Furthermore, at this time, an inert gas (purified gas) is supplied to the transfer chamber 33 (purification in the transfer chamber 33). Specifically, valve 56b is opened to allow inert gas to flow into the gas supply pipe 56. The inert gas is supplied to the transfer chamber 33 with the flow rate adjusted by MFC56a. The _N2 gas supplied to the transfer chamber 33 rises in the transfer chamber 33 and is discharged to the suction part 26 through the opening 27. The _N2 gas discharged to the suction part 26 is exhausted from the processing chamber 23 through the exhaust pipe 61 together with the raw material gas discharged to the suction part 26. By exhausting the gas from the transfer chamber 33 through the suction part 26, the exhaust action can be stabilized.

The supply of inert gas into the transfer chamber 33 is carried out under the conditions that the gas pressure in the transfer chamber 33 is higher than the gas pressure in the processing chamber 23 (gas pressure in the processing chamber 23 < gas pressure in the transfer chamber 33), and the flow rate of the gas supplied to the transfer chamber 33 is greater than the total flow rate of the gas supplied to the processing chamber 23 (total flow rate of the gas supplied to the processing chamber 23 < gas flow rate supplied to the transfer chamber 33).

After the first layer is formed on the surface of the wafer 200, the valve 52b is closed to stop the supply of the raw material gas into the processing chamber 23. Then, the gas remaining in the processing chamber 23 is discharged from the processing chamber 23 (purification). At this time, the valves 53b and 55b are opened to supply the inert gas into the processing chamber 23 through the gas supply pipe 51 and the nozzle 24. The inert gas acts as a purification gas, thereby purifying the inside of the processing chamber 23.

The first gas (raw material gas) may be a chlorosilane gas such as chlorosilane (SiH ₃ Cl, abbreviated as MCS) gas, hexachlorodisilane (Si ₂ Cl ₆ , abbreviated as HCDS) gas, dichlorosilane (SiH ₂ Cl ₂ , abbreviated as DCS) gas, trichlorohydrosilane (SiHCl ₃ , abbreviated as TCS) gas, tetrachlorosilane (SiCl ₄ , abbreviated as STC) gas, or octachlorotrisilane (Si ₃ Cl ₈ , abbreviated as OCTS) gas.

The inert gas may be a rare gas such as Ar gas, He gas, _N2 gas, Ne gas, or Xe gas. This also applies to each step described below.

[Reaction gas supply step: S143] In this step, reaction gas is supplied to the wafer 200 in the processing chamber 23, that is, the first layer formed on the wafer 200.

Specifically, valve 54b is opened to flow the reaction gas into the gas supply pipe 54. The reaction gas is regulated in flow rate by MFC54a and supplied into the processing chamber 23 through the gas supply pipe 51 and the nozzle 24. The reaction gas supplied into the processing chamber 23 rises in the processing chamber 23, flows out from the upper end opening of the inner tube 21 to the exhaust flow path 25, flows down in the exhaust flow path 25, and is exhausted from the exhaust pipe 61 through the suction part 26. At this time, the reaction gas is supplied to the wafer 200. At this time, valves 53b and 55b are closed so that the inert gas is not supplied into the processing chamber 23 together with the reaction gas. That is, the second gas is supplied into the processing chamber 23 without being diluted with the inert gas, and is exhausted from the exhaust pipe 61. By supplying the reactive gas into the processing chamber 23 without being diluted with the inert gas, the film formation rate of the thin film can be increased.

In addition, at this time, the inert gas is also supplied into the transfer chamber 33 by the same processing procedure as the purification inside the transfer chamber 33 in the case of the above-mentioned raw material gas supply step (S141).

The processing conditions of this step are shown below as an example. Reaction gas supply flow rate: 0.1 to 10 slm Processing pressure: 1 to 4000 Pa, preferably 1 to 3000 Pa. Other processing conditions are set to be the same as the processing conditions of the raw material gas supply step (S141).

Under the above conditions, for example, oxygen-containing gas is supplied to the wafer 200 as a reaction gas, whereby at least a portion of the first layer formed on the wafer 200 is oxidized (modified). As the first layer is modified, a layer containing Si and O, that is, a SiO layer, is formed on the wafer 200 as the second layer. When the second layer is formed, impurities such as Cl contained in the first layer are converted into a gaseous substance containing at least Cl during the modification reaction of the first layer by the reaction gas, and are exhausted from the processing chamber 23. As a result, the second layer is a layer having less impurities such as Cl than the first layer.

After the second layer is formed, the valve 54b is closed to stop the supply of the reaction gas into the processing chamber 23. Then, the gas remaining in the processing chamber 23 is exhausted from the processing chamber 23 by the same processing procedure as the purification of the raw material gas supply step (S141) described above.

The reaction gas may be an O-containing gas such as nitrous oxide ( _N2O ) gas, nitric oxide (NO) gas, nitrogen dioxide ( _NO2 ) gas, oxygen ( _O2 ) gas, ozone ( _O3 ) gas, water vapor ( _H2O gas), carbon monoxide (CO) gas, carbon dioxide ( _CO2 ) gas, or the like.

(Confirmation of the number of implementations: S150) By performing the above-mentioned raw material gas supply step (S141) and reaction gas supply step (S143) cycles for a predetermined number of times (n times, n is an integer greater than 1) non-simultaneously, i.e., not synchronously and alternately, a SiO film can be formed on the surface of the wafer 200, for example. The above-mentioned cycle is preferably repeated several times. That is, the thickness of the SiO layer formed in each cycle is made thinner than the desired film thickness, and the film thickness of the film formed by stacking SiO layers is formed to the desired film thickness (e.g., 0.1 to 2 nm), and it is ideal to repeat it several times (e.g., 0 to 80 times, more preferably, 10 to 15 times). Each time the above cycle ends, it is determined whether the cycle has been executed a preset number of times (predetermined number of times).

(Post-purification: S160) After confirming that the above cycle has been repeated for a predetermined number of times, the purified gas is supplied from the gas supply pipes 53 and 55 to the processing chamber 23, and the gas is exhausted from the exhaust pipe 61 through the suction unit 26. In this way, the processing chamber 23 is purified, and the gas or by-products remaining in the processing chamber 23 are removed from the processing chamber 23.

(Restoring atmospheric pressure: S170) Afterwards, the atmosphere in the processing chamber 23 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 23 is restored to normal pressure.

(Wafer boat unloading: S180) Afterwards, the substrate support 41 is raised in the opposite procedure to the above-mentioned wafer boat loading process (S120), and the wafer 200 is placed on the substrate holding member 41d. As shown in FIG2, the substrate support is lowered by the lifting and rotating mechanism 44, and the processed wafer 200 is carried out from the processing chamber 23 to the transfer chamber 33 of the lower chamber 30 while being supported by the substrate support 41 (wafer boat unloading).

(Wafer release: S190) Afterwards, the processed wafer 200 is removed from the substrate support 41 (taken out) in the reverse order of the above-mentioned wafer filling process (S110), and is carried out to the outside of the lower chamber 30 through the substrate loading and unloading port 32. In addition, the processed wafer 200 is taken out from the bottom of the substrate support 41. That is, the wafer boat unloading (S180) and the wafer release (S190) are partially performed in parallel.

In this way, the film forming process of forming the SiO layer on each of the plurality of wafers 200 is completed.

(3) Effects of this form According to the above form, one or more of the following effects can be obtained.

(a) In this embodiment, the partition plate 46d is formed into a ring shape with a through hole 46e in the center. This can reduce the volume and heat capacity compared to a disk-shaped partition plate, thereby increasing the speed of temperature rise and fall.

(b) In this embodiment, the distance between the partition 46d and the wafer 200 is variable. That is, the partition support portion 46 supporting the ring-shaped partition 46d and the substrate support portion 41 supporting the wafer 200 are independently configured, and one or both of the substrate support portion 41 and the partition support portion 46 can be raised or lowered. In this way, the wafer 200 can be directly placed on the partition 46d, and the film forming processing space can be separated for each wafer 200.

(c) In this embodiment, by providing the partition plate 46d in a ring shape, the weight can be reduced and the substrate support can be easily removed during maintenance.

<Other forms of this case> The above specifically describes the forms of this case, but this case is not limited to the above forms and various changes can be implemented within the scope of its main purpose.

The above-mentioned form shows an example in which the reaction tube has an inner tube and an outer tube, but the present invention is not limited thereto, and the reaction tube may have a structure without an inner tube and only an outer tube.

Furthermore, the above configuration is an example of arranging a lower chamber at the lower side of the reaction tube, but the present invention is not limited to this. For example, the reaction tube may be configured in a horizontal shape, and a chamber (lower chamber) may be arranged next to the reaction tube. Alternatively, a vertical device may be configured, and a chamber (lower chamber) may be arranged at the upper part of the reaction tube. That is, the chamber forming the transfer chamber of the substrate is not limited to the above-mentioned lower chamber as long as it is arranged to be connected to the reaction tube.

In addition, the above-mentioned form is an example of explaining the formation of a SiO film as a thin film, but the present invention is not limited to such a form.

For example, as the reactant, in addition to O-containing gases such as _O2 gas, nitrogen ₍ N)-containing gases such as ammonia ( _NH3 ) gas, N and carbon (C)-containing gases such as triethylamine (( _C2H5 ) _3N , abbreviated as: TEA) gas, C-containing gases such as propylene ( _C3H6 ) gas, boron (B)-containing gases such as boron trichloride ( _BCl3 ) gas, etc. can also be _used . Furthermore, films such as silicon oxide film (SiO film), silicon nitride film (SiN film), silicon oxynitride film (SiON) film, silicon carbon nitride film (SiCN film), silicon oxycarbonide film (SiOC film), silicon oxycarbonitride film (SiOCN film), silicon boron nitride film (SiBN film), and silicon boron carbon nitride film (SiBCN film) can be formed on the surface of the substrate according to the gas supply sequence shown below. In such cases, the same effects as those of the above-mentioned forms can be obtained. The processing procedures and processing conditions when supplying such reaction gases can be, for example, set to be the same as those when supplying reaction gases in the above-mentioned forms. In such cases, the same effects as those of the above-mentioned forms can be obtained.

Furthermore, for example, raw materials and reactants may be supplied to a substrate at the same time to form the above-mentioned various films on the substrate. Furthermore, for example, raw materials may be supplied to a substrate alone to form a silicon film (Si film) on the substrate. In such cases, the same effects as those in the above-mentioned forms can be obtained. The processing procedures and processing conditions when supplying such raw materials or reactants can be set to be the same as those when supplying raw materials or reactants in the above-mentioned forms. In such cases, the same effects as those in the above-mentioned forms can be obtained.

Furthermore, for example, the present invention can be applied when a metal thin film containing titanium (Ti), zirconium (Zr), niobium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W), etc. is formed. Even in such a case, the same effect as the above-mentioned form can be obtained. That is, the present invention can be applied when a film containing a predetermined element such as a semi-metallic element (semiconductor element) or a metal element is formed.

In the above-mentioned form, as a substrate processing step, the case of forming a thin film on the surface of the substrate is mainly cited as an example, but the present invention is not limited to this. That is, in addition to the thin film formation exemplified in the above-mentioned form, the present invention is also applicable to film forming processes other than the thin film exemplified in the above-mentioned form. In addition, regardless of the specific content of the substrate processing, not only film forming processes but also other substrate processing such as heat treatment (annealing process), plasma treatment, diffusion treatment, oxidation treatment, nitridation treatment, lithography treatment, reflow treatment for carrier activation or flattening after ion implantation, etc. can be applied.

The recipe used in each process is prepared individually according to the process content, and is preferably stored in the memory device 73 via an electrical communication line or an external memory device 81. Then, when each process is started, the CPU 71 will select an appropriate recipe from the plurality of recipes stored in the memory device 73 according to the process content. In this way, films of various film types, composition ratios, film qualities, and film thicknesses can be formed with good reproducibility in one substrate processing device. In addition, the burden on the operator can be reduced, and each process can be started quickly while avoiding operation failures.

The above-mentioned recipe is not limited to the case of newly creating, and for example, it can also be prepared by modifying an existing recipe installed in a substrate processing apparatus. When modifying a recipe, the modified recipe can be installed in the substrate processing apparatus via an electrical communication line or a recording medium recording the recipe. In addition, the existing recipe installed in the substrate processing apparatus can be directly modified by operating the input/output device 82 provided in the existing substrate processing apparatus.

The above-mentioned form is an example of film formation using a batch-type substrate processing device that processes a plurality of substrates at a time. The present invention is not limited to the above-mentioned form, and can also be well applied to the case of film formation using a single-piece substrate processing device that processes one or more substrates at a time. In addition, the above-mentioned form is an example of film formation using a substrate processing device having a hot wall type processing furnace. The present invention is not limited to the above-mentioned form, and can also be well applied to the case of film formation using a substrate processing device having a cold wall type processing furnace.

In the above-mentioned form, an example of performing substrate processing by heating with a resistance heating heater is described. The present case is not limited to this form, and heating for substrate processing, for example, can also be performed by irradiation of ultraviolet rays. When heating by ultraviolet irradiation, for example, a deuterium lamp, a helium lamp, a carbon arc lamp, a BRV light source, an excimer lamp, a mercury lamp, etc. can be used as a heating means instead of the heater 10. In addition, such heating means can also be used in combination with the heater.

When using such substrate processing apparatus, each process can be performed using the same processing procedures and processing conditions as the above-mentioned form, and the same effects as the above-mentioned form can be obtained.

The above-mentioned forms can be used in combination as appropriate. The processing procedure and processing conditions in this case can be set to be the same as the processing procedure and processing conditions of the above-mentioned forms, for example.

23: Processing chamber 24: Nozzle (gas supply unit) 41: Substrate support unit (first support unit) 41c: Pillar (first support unit) 46: Partition support unit (second support unit) 46c: Pillar (second support unit) 46d: Partition (plate) 46e: Through hole 200: Wafer (substrate)

[FIG. 1] is a schematic structural diagram of a substrate processing device applicable to one embodiment of the present invention, and is a longitudinal sectional diagram of a processing furnace portion showing a state where a substrate support carrying a wafer is carried into a processing chamber. [FIG. 2] is a schematic structural diagram of a substrate processing device applicable to one embodiment of the present invention, and is a longitudinal sectional diagram of a processing furnace portion showing a state where a substrate support carrying a wafer is carried into a transfer chamber. [FIG. 3] is a plan view of a partition of a substrate support applicable to one embodiment of the present invention. [FIG. 4] is a plan view showing the relationship between the partition shown in FIG. 3 and the wafer. [FIG. 5] is a three-dimensional diagram showing the main structure of a substrate support applicable to one embodiment of the present invention. [Fig. 6] is a plan view showing the relationship between the substrate holding portion and the partition of the substrate support shown in Fig. 5. [Fig. 7] is a cross-sectional view showing the state of placing a wafer on the substrate supporting portion of the substrate support shown in Fig. 5. [Fig. 8] is a cross-sectional view showing the state of placing a wafer on the partition supporting portion of the substrate support shown in Fig. 5. [Fig. 9] is a schematic diagram showing the structure of a controller of a substrate processing device applicable to one form of the present case, and a diagram showing the control system of the controller in a block diagram. [Fig. 10] is a film forming process performed by a substrate processing device applicable to one form of the present case.

1: Vertical processing furnace

10: Heater

11: Temperature sensor

20: Reaction tube

21: Inner tube (inner tube)

22: Outer tube (outer tube)

23: Processing room

24: Nozzle (gas supply part)

24a: Gas supply hole

25: Exhaust flow path

26: Suction unit

27: Open mouth

30: Lower chamber

31: flange

32: Substrate loading and unloading port

33: Transfer room

41: Substrate support part

42: Insulation section

43: Rod

44: Lifting and rotating mechanism (crystal boat elevator)

46: Partition support part (second support part)

47: Bottom closed cover

51,52,54: Gas supply pipe

52a:Mass flow controller (MFC)

52b: Open/close valve

53,55,56: Gas supply pipe

53a:MFC

53b: Valve

54a:MFC

54b: Valve

55a:MFC

55b: Valve

56a:MFC

56b: Valve

61: Exhaust pipe

62: Pressure sensor

63:APC valve

64: Vacuum pump

70: Controller

200: Wafer (substrate)

Claims (16)

A substrate processing device is characterized by comprising: a substrate support having a first supporting part and a second supporting part, the first supporting part having a plurality of first pillars for supporting a plurality of substrates at intervals in the vertical direction, the second supporting part being arranged between the plurality of substrates supported by the first supporting part, and having a plurality of second pillars for supporting a plurality of plates having through holes in the center; a processing chamber for accommodating the substrate support; and a gas supply part for supplying gas to the processing chamber, the plurality of plates being provided with notches for arranging the first pillars, and a gap being formed between the plates and the first pillars. A substrate processing device as described in claim 1, wherein the shape of the plate is a ring. A substrate processing device as recited in claim 1, wherein at least one protrusion is provided on the aforementioned plate. As described in claim 3, the substrate processing device, wherein the height of the protrusion is 0.1 mm to 3 mm. The substrate processing device as described in claim 1, wherein the diameter of the through hole is 1/6 to 3/4 of the diameter of the substrate. The substrate processing device as described in claim 1, wherein the diameter of the plate is 1.03 to 1.30 times the diameter of the substrate. The substrate processing device as described in claim 1, wherein the first pillar has a supporting portion for supporting the substrate, and the notch portion is configured to enable the supporting portion to move in an upward and downward direction. The substrate processing device as recited in claim 1 is configured such that the substrate can be moved to any height by moving the first support up and down. The substrate processing device as described in claim 1, wherein during the processing of the aforementioned substrate, the aforementioned substrate is arranged on the aforementioned plate. As described in claim 9, the substrate processing device, wherein the substrate is arranged on the plate when the temperature of the substrate is -100°C to 0°C higher than the temperature at which the substrate is processed. A substrate support is characterized by comprising: a first support portion having a plurality of first pillars for supporting a plurality of substrates at intervals in the vertical direction; and a second support portion, which is arranged between the plurality of substrates held by the first support portion, and has a plurality of second pillars for supporting a plurality of plates having through holes in the center, wherein the plurality of plates are provided with notches for arranging the first pillars, and a gap is formed between the plates and the first pillars. A method for manufacturing a semiconductor device, characterized by comprising: a step of accommodating a substrate support in a processing chamber of a substrate processing device; and a step of supplying a gas into the processing chamber, wherein the substrate processing device comprises the substrate support, the processing chamber accommodating the substrate support, and a gas supply unit for supplying the gas to the processing chamber, wherein the substrate support comprises: a first support unit having a plurality of first pillars for supporting a plurality of substrates at intervals in the vertical direction; and a second support unit arranged between the plurality of substrates held by the first support unit, having a plurality of second pillars for supporting a plurality of plates having through holes in the center, the plurality of plates being provided with notches for arranging the first pillars, and gaps being formed between the plates and the first pillars. The method for manufacturing a semiconductor device as described in claim 12, wherein the step of heating the substrate is performed after the step of accommodating, and in the step of heating, the temperature of the substrate is formed to be -100℃~0℃ higher than the temperature of processing the substrate, and the substrate is placed on the plate. A method for manufacturing a semiconductor device as recited in claim 12, wherein, in the step of supplying the aforementioned gas, the supply of the aforementioned gas is started after the aforementioned substrate is placed on the aforementioned plate. A substrate processing method, characterized by comprising: a step of accommodating a substrate support in a processing chamber of a substrate processing device; and a step of supplying gas into the processing chamber, wherein the substrate processing device comprises the substrate support, the processing chamber accommodating the substrate support, and a gas supply unit for supplying the gas to the processing chamber, wherein the substrate support comprises: a first support unit having a plurality of first pillars for supporting a plurality of substrates at intervals in the vertical direction; and a second support unit arranged between the plurality of substrates held by the first support unit, having a plurality of second pillars for supporting a plurality of plates having through holes in the center, the plurality of plates being provided with notches for arranging the first pillars, and a gap being formed between the plates and the first pillars. A program, characterized in that the following programs are executed on a substrate processing device via a computer, the program for accommodating a substrate support in a processing chamber of the substrate processing device; and the program for supplying gas into the aforementioned processing chamber, wherein the aforementioned substrate processing device comprises the aforementioned substrate support, the aforementioned processing chamber for accommodating the aforementioned substrate support, and a gas supply unit for supplying the aforementioned gas to the aforementioned processing chamber, wherein the aforementioned substrate support comprises: 1 supporting part, which has a plurality of first pillars for supporting a plurality of substrates at intervals in the vertical direction; and a second supporting part, which is arranged between the plurality of substrates held by the first supporting part, and has a plurality of second pillars for supporting a plurality of plates having a through hole in the center, and the plurality of plates are provided with a notch for arranging the first pillar, and a gap is formed between the plate and the first pillar.

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