TWI868470B - Magnetron sputtering device - Google Patents

Abstract

A magnetron sputtering device comprises: a process chamber; The target material is arranged on the top of the process chamber; The bearing base is used for bearing the wafer, and the bearing base is arranged in the process chamber and is located below the target; The guide device is arranged between the target and the bearing base, and the guide device is configured to form an electric field or magnetic field in the process chamber. The electric field or magnetic field is used to adjust the trajectory of the particles splashed by the target, so that the particles tend to be vertically deposited on the wafer.

Description

Magnetron sputtering equipment

The present application relates to the field of semiconductor manufacturing technology, and in particular to a magnetron sputtering device.

In the process of manufacturing semiconductor chips, trenches need to be constructed on the wafer, and metal circuits are deposited in the trenches through the physical vapor deposition (PVD) process. These metal circuits can connect transistors and other components in series to form integrated circuits. In the specific deposition process, the particles sputtered from the target material need to be deposited into the trenches of the wafer based on magnetron sputtering technology.

However, the particles sputtered from the target are in an irregular scattered state. It is difficult for these particles to align and fall into the grooves for deposition, resulting in the blocking of the groove openings, the existence of deposition voids, and the movement of particles outside the wafer.

This application discloses a magnetron sputtering device to optimize the deposition quality of particles sputtered from a target material.

In order to solve the above problems, this application adopts the following technical solutions:

The present application provides a magnetron sputtering device, which includes: a process chamber; a target material, which is arranged at the top of the process chamber; a supporting base, which is used to support a wafer, and the supporting base is arranged in the process chamber and is located below the target material; a guiding device, which is arranged between the target material and the supporting base, and the guiding device is configured to form an electric field or a magnetic field in the process chamber, and the electric field or the magnetic field is used to adjust the movement trajectory of particles sputtered by the target material so that the particles tend to be deposited vertically on the wafer.

The technical solution adopted in this application can achieve the following beneficial effects:

In the magnetron sputtering equipment implemented in the present application, the guiding device can form an electric field or a magnetic field in the process chamber, and the electric field or the magnetic field generates an electric field force or a magnetic field force to adjust the movement trajectory of the particles sputtered from the target material, so that the movement trajectory of the particles is perpendicular to the wafer surface, so that the particles tend to be deposited vertically on the wafer, which not only increases the number of particles falling into the wafer and reduces the waste of target materials, but also makes the particles fall vertically to the bottom of the wafer groove, effectively improving the problem of abnormal particle deposition and blocking the groove opening and the existence of deposition voids, and ultimately achieving the effect of improving the deposition quality of the particles.

The following disclosure provides many different embodiments or examples for implementing the different components of the present disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, a first component formed above or on a second component in the following description may include an embodiment in which the first component and the second component are formed to be in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the present disclosure may repeatedly refer to numbers and/or letters in each example. This repetition is for the purpose of simplification and clarity and does not itself indicate the relationship between the various embodiments and/or configurations discussed.

Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein to describe the relationship of one element or component to another element or components as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted similarly.

Although the numerical ranges and parameters setting forth the broad scope of the present disclosure are approximate, the numerical values set forth in the specific examples are reported as accurately as possible. However, any numerical value inherently contains certain errors necessarily due to the standard deviation found in the respective testing measurements. Furthermore, as used herein, the term "approximately" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "approximately" means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in the operating/working examples, or unless otherwise explicitly specified, all numerical ranges, quantities, values and percentages for the amount of materials disclosed herein, the duration of time, temperature, operating conditions, the ratio of quantities and the like should be understood as being modified by the term "approximately" in all instances. Accordingly, unless otherwise indicated, the numerical parameters set forth in the present disclosure and the accompanying invention claims are approximate values that may vary as needed. At least, each numerical parameter should be interpreted in view of the number of reported significant digits and by applying ordinary rounding techniques. Ranges may be expressed herein as from one end point to another or between two end points. All ranges disclosed herein include endpoints unless otherwise specified.

The following is a detailed description of the technical solutions disclosed in each embodiment of this application in conjunction with the accompanying drawings.

In order to optimize the deposition quality of particles sputtered from the target material, the present application embodiment provides a magnetron sputtering device. As shown in FIG. 1 to FIG. 9 , the magnetron sputtering device of the present application embodiment includes a process chamber 100 , a target material T, a support base 200 and a guide device 400 .

The process chamber 100 is a basic component of the magnetron sputtering device, which can serve as a mounting base for some other components and protect the components disposed in the process chamber 100. The process chamber 100 has a process space inside, and the process space provides a specific process environment for processing the wafer W.

The target material T is disposed at the top of the process chamber 100. The embodiment of the present application does not limit the specific material of the target material T, and it can be copper, aluminum, etc.

The support base 200 is disposed in the process chamber 100 and is used to support the wafer W. The support base 200 may be provided with a fixing element (such as a chuck element), and the fixing element is used to fix the wafer W on the support base 200 to prevent the wafer W from shifting during the process. At the same time, the support base 200 is located below the target material T. Specifically, the target material T and the support base 200 are arranged in sequence from top to bottom along the height direction of the process chamber 100, and the two are arranged oppositely, so that after the target material T sputters out particles, the particles can smoothly fall on the wafer W of the support base 200.

The magnetron sputtering device of the embodiment of the present application further includes a magnetron sputtering assembly 300, which is used to act on the target material T to sputter out particles. The magnetron sputtering element 300 may include a driving mechanism 320 and a magnetron 310 connected thereto, and the magnetron 310 is arranged on a side of the target material T away from the carrier 200, and under the action of the driving mechanism 320, the magnetron 310 performs a rotational motion. During the magnetron sputtering process, after the process gas (usually argon) is introduced into the process chamber 100, a DC power supply applies a DC bias to the target material T, so that the target material T is negatively biased relative to the grounded process chamber 100, which will stimulate the process gas to discharge and generate plasma. The positively charged plasma will be attracted to the negatively biased target material T. When the energy of the plasma is large enough, it will bombard the surface of the target material T, thereby causing the target material T to sputter out particles; based on the material of the target material T, corresponding metal particles, such as copper particles, aluminum particles, etc., will be sputtered.

The impact area and angle of the plasma generated by the process gas discharge on the target material T are random, so the particles sputtered by the target material T are in a state of irregular scattering, which will cause some particles to sputter outside the wafer W area, thereby causing waste of the target material T. Even if the remaining particles can fall within the range of the wafer W, most of them will be incident at an oblique angle to the surface of the wafer W and will be difficult to deposit in the grooves of the wafer W. They may even continue to accumulate around the opening of the groove and block the opening, further increasing the difficulty of particles entering the groove. With the advancement of technology, the feature size of semiconductor chips is set to be smaller and smaller, which makes the opening of the trench on the wafer W further reduced and the aspect ratio further increased, and the above-mentioned problem will become more serious.

In view of the above problems, the magnetron sputtering device of the embodiment of the present application solves the problems by providing a guiding device 400.

In the present application embodiment, the guiding device 400 is disposed between the target material T and the supporting base 200. The guiding device 400 is configured to form an electric field or a magnetic field in the process chamber 100. The electric field or the magnetic field is used to adjust the movement trajectory of the particles sputtered from the target material so that the particles tend to be deposited vertically on the wafer W.

It should be understood that particles are sputtered from the target material T and fall onto the wafer W. The area between the target material T and the supporting base 200 is the sputtering area. The guiding device 400 is arranged between the target material T and the supporting base 200, which enables the guiding device 400 to form an electric field or a magnetic field in the sputtering area, thereby producing a guiding effect on the particles in the sputtering area.

If the guiding device 400 is used to form an electric field, the formed electric field causes the particles therein to be subjected to an electric field force, and under the action of the electric field force, the movement trajectory of the particles can be changed; if the guiding device 400 is used to form a magnetic field, the formed magnetic field causes the particles therein to be subjected to a magnetic field force, and under the action of the magnetic field force, the movement trajectory of the particles can be changed.

With the help of the guide device 400, the movement trajectory of the particles sputtered from the target material can be adjusted by generating an electric field force or a magnetic field force, that is, the particles are guided so that the particles sputtered outside the wafer W are guided to fall into the wafer W, and the movement trajectory of these particles and the particles that originally fell into the wafer W are perpendicular to the wafer surface. In other words, the guide device 400 allows the particles to fall onto the wafer W at an incident angle tending to 0°. The incident angle of the particles refers to the angle between the movement trajectory of the particles and the normal of the surface of the wafer W. From the overall situation of the particles sputtered from the target material T, the particles change from the previous irregular scattering state to a state of being more concentrated and incident on the wafer W vertically downward.

In this case, the number of particles sputtered from the target material T that fall into the wafer W will increase significantly, which can not only reduce the waste of the target material T, but also increase the number of particles falling into the grooves, which to a certain extent reduces the occurrence of deposition voids; at the same time, since more particles tend to fall vertically into the wafer W, these particles will not be as obliquely incident as particles The particles are deposited at the opening of the groove, and will not be deposited on the side wall near the opening after passing through the opening. They can fall vertically to the bottom of the groove to ensure that the groove is filled with particles everywhere, thereby improving the uniformity of particle deposition in the groove, effectively avoiding the occurrence of deposition voids, and preventing particles from abnormally depositing at the opening of the groove and blocking the opening. Based on the above beneficial effects, the guiding device 400 of the embodiment of the present application can effectively improve the deposition quality of particles.

It should be noted that, since the electric field force can change the direction and magnitude of the particle's velocity at the same time, the electric field formed by the guiding device of the embodiment of the present application is a directional electric field, so as to adjust the particle's movement trajectory in the same direction; since the magnetic field force only changes the direction of the particle's velocity but does not change the magnitude of the particle's velocity, the magnetic field formed by the guiding device of the embodiment of the present application is not limited to a directional magnetic field, but can also be a non-directional magnetic field.

As can be seen from the above description, in the magnetron sputtering equipment of the embodiment of the present application, the guiding device 400 can form an electric field or a magnetic field in the process chamber 100, and the electric field or the magnetic field generates an electric field force or a magnetic field force to adjust the movement trajectory of the particles sputtered by the target material, so that the movement trajectory of the particles is perpendicular to the wafer surface, so that the particles can tend to be deposited vertically on the wafer W. This not only increases the number of particles falling into the wafer W and reduces the waste of the target material T, but also makes the particles fall vertically to the bottom of the trench of the wafer W, effectively improving the problem of abnormal particle deposition and blocking the trench opening and the existence of deposition voids, and ultimately achieving the effect of improving the deposition quality of the particles.

In some optional embodiments, the guiding device 400 includes a plurality of main parts, which are arranged in sequence from top to bottom, and each main part is provided with a plurality of through holes for particles to pass through; the through holes on the plurality of main parts correspond to each other one by one; each main part is a conductor, and the electric potential of the plurality of main parts decreases in sequence from top to bottom to form a sub-electric field between each two adjacent main parts, and the sub-electric field is used to adjust the movement trajectory of the passing particles. Specifically, under such a configuration, the plurality of main parts all have conductive properties, so that a sub-electric field can be formed between the opposite side surfaces of each two adjacent main parts by applying voltage to the plurality of main parts; since the potential of the plurality of main parts decreases from top to bottom, the direction of each sub-electric field is from top to bottom. In this case, after the particles are guided from top to bottom through each sub-electric field in turn, the particles will be guided multiple times, and the sub-electric field below can make up for the lack of guiding effect of the sub-electric field above on the particles, so as to ensure that the particles are finally guided to fall vertically into the wafer W.

Since each main body has multiple through holes for particles to pass through, the electric field intensity of the solid overlapping area (non-through hole area) of each adjacent main body is undoubtedly higher, and the equipotential surfaces in this area are denser, while the electric field intensity of the corresponding area of each through hole is undoubtedly lower, and the equipotential surfaces in this area are sparser; overall, as shown in Figure 3, the dotted line in Figure 3 represents the equipotential surface.

The particles ejected from the target material T are positively charged, and the electric field force they experience in the sub-electric field is perpendicular to the equipotential surface, that is, the particles will deflect in the normal direction of the equipotential surface. Therefore, under the continuous action of the electric field force, the particles will show the movement trajectory shown in Figure 3. The solid line in Figure 3 represents the movement trajectory of the particles. It should be noted that, since the particles are accelerated due to their own weight and the electric field force, there will be a difference in the travel time between the upper and lower halves of each adjacent main body, that is, the travel time of the particles in the upper half between each adjacent main body will be longer than the travel time in the lower half between each adjacent main body. Therefore, the deflection of the particles caused by the electric field force in the upper half between each adjacent main body is larger, while the deflection of the particles in the lower half between each adjacent main body is smaller. In this way, particles incident in a state of irregular scattering will all be emitted from the guiding device 400 at an angle tending to be perpendicular to the wafer W, and the particles will be parallel to each other.

By adjusting the strength of each sub-electric field, the magnitude of the electric field force to which the particles are subjected in the sputtering region can be adjusted. Since the movement trajectory of the particle is directly related to the magnitude of the electric field force to which it is subjected, it is difficult for the particle to fall vertically into the wafer W when the electric field force is large or small. Therefore, the guiding device 400 can be pre-tested, and the strength of each sub-electric field can be adjusted to an appropriate range by observing the movement trajectory of the particle through the guiding device 400.

Taking two main parts as an example, as shown in Figures 1 to 3, the embodiment of the present application provides a first guiding device 400, which has two main parts, namely a first main part 410 and a second main part 420. The first main part 410 and the second main part 420 are arranged in sequence from top to bottom. The through hole opened on the first main part 410 is the first through hole H1, and the through hole opened on the second main part 420 is the second through hole H2. The multiple first through holes H1 correspond to the multiple second through holes H2 one by one. Optionally, along the height direction (i.e., the vertical direction) of the process chamber 100, the projections of the first through hole H1 and the second through hole H2 can overlap with each other.

At the same time, the first main body 410 and the second main body 420 are both conductors, the first main body 410 is configured to be at a first potential U1, the second main body 420 is configured to be at a second potential U2, and the first potential U1 is greater than the second potential U2 to form a first sub-electric field between the first main body 410 and the second main body 420.

Specifically, under such a configuration, the first main body 410 and the second main body 420 both have conductive properties, so that a first sub-electric field can be formed between the opposite side end surfaces of the first main body 410 and the second main body 420 by applying a voltage to the first main body 410 and the second main body 420; since the first potential U1 is greater than the second potential U2, the direction of the first sub-electric field is from the end surface of the first main body 410 toward the second main body 420 to the end surface of the second main body 420 toward the first main body 410.

Due to the existence of the first through hole H1 and the second through hole H2, the electric field strength in the physically overlapping area of the first main body 410 and the second main body 420 is undoubtedly higher, and the equipotential surfaces in this area are relatively dense, while the electric field strength in the corresponding area of the first through hole H1 and the second through hole H2 is undoubtedly lower, and the equipotential surfaces in this area are relatively sparse; overall, as shown in Figure 3, Figure 3 shows the equipotential surface distribution morphology of the first sub-electric field, and the dotted line in Figure 3 represents the equipotential surface.

The particles sputtered from the target material T carry positive charge, and the electric field force they are subjected to in the first sub-electric field is perpendicular to the equipotential surface, that is, the particles will be deflected in the normal direction of the equipotential surface. Therefore, under the continuous action of the electric field force, the particles will show the motion trajectory shown in Figure 3. The solid line in Figure 3 represents the motion trajectory of the particles. It should be noted that, since the particles are accelerated due to their own weight and the electric field force, there will be a difference in the passage time between the upper and lower halves between the first main body 410 and the second main body 420, that is, the passage time of the particles in the upper half between the first main body 410 and the second main body 420 will be longer than the passage time in the lower half between the first main body 410 and the second main body 420. Therefore, the deflection of the particles caused by the electric field force in the upper half between the first main body 410 and the second main body 420 is larger, while the deflection of the particles caused by the electric field force in the lower half between the first main body 410 and the second main body 420 is smaller. In this way, the particles incident in a randomly scattered state will all be emitted from the guiding device 400 at an angle tending to be perpendicular to the wafer W, and the particles will be parallel to each other.

The embodiment of the present application does not limit the specific implementation method of the first main body 410 being configured to be in the first potential U1 and the second main body 420 being configured to be in the second potential U2. For example, it can be implemented by an electric field loading element. The electric field loading element may include a first DC power supply and a second DC power supply. The first DC power supply is electrically connected to the first main body 410 to form a path, and the second DC power supply is electrically connected to the second main body 420 to form a path. The first DC power supply applies a first voltage to the first main body 410, and the first main body 410 is in the first potential U1, and the second DC power supply applies a first voltage to the second main body 420. The second voltage is applied to the first main body 410, and the second main body 420 is at a second potential U2; or, the electric field loading element includes a DC power supply and an electrical connector (usually a wire), the DC power supply is electrically connected to the first main body 410 and the second main body 420 respectively, and the electrical connector is also electrically connected to the first main body 410 and the second main body 420, so that the DC power supply, the first main body 410, the second main body 420 and the electrical connector form a loop, the DC power supply applies a voltage to the first main body 410 and the second main body 420, and the first main body 410 is at a first potential U1, and the second main body 420 is at a second potential U2.

By adjusting the strength of the first sub-electric field, the magnitude of the electric field force to which the particles are subjected in the sputtering region can be adjusted. Since the movement trajectory of the particles is directly related to the magnitude of the electric field force to which they are subjected, it is difficult for the particles to fall vertically into the wafer W when the electric field force is large or small. Therefore, the guiding device 400 can be pre-tested, and the strength of the first sub-electric field can be adjusted to an appropriate range by observing the movement trajectory of the particles passing through the guiding device 400.

The guiding device 400 of the embodiment of the present application can also adjust the guiding effect on the particles in other ways. In another embodiment, as shown in FIG. 8 , the guiding device 400 of the embodiment of the present application has three main parts, namely a first main part 410, a second main part 420 and a third main part 430. The first main part 410, the second main part 420 and the third main part 430 are arranged in sequence from top to bottom, and are opened in the first main part. The through hole on the main body 410 is the first through hole H1, the through hole opened on the second main body 420 is the second through hole H2, and the through hole opened on the third main body 430 is the third through hole (not shown in the figure). The multiple first through holes, the multiple second through holes and the multiple third through holes correspond to each other one by one. Optionally, along the height direction (i.e., the vertical direction) of the process chamber 100, the projections of the first through hole H1, the second through hole H2 and the third through hole can overlap with each other.

At the same time, the first main body 410, the second main body 420 and the third main body 430 are conductors, the first main body 410 is configured to be at a first potential U1, the second main body 420 is configured to be at a second potential U2, the third main body 430 is configured to be at a third potential, and the first potential U1 is greater than the second potential U2, and the third potential is less than the second potential U2, so as to form a first sub-electric field between the first main body 410 and the second main body 420, and form a second sub-electric field between the second main body 420 and the third main body 430.

Specifically, under such a configuration, the first main body 410, the second main body 420 and the third main body 430 all have conductive properties. Therefore, by applying voltage to the first main body 410, the second main body 420 and the third main body 430, a first sub-electric field can be formed between the opposite side end surfaces of the first main body 410 and the second main body 420, and a second sub-electric field can be formed between the opposite side end surfaces of the second main body 420 and the third main body 430. Since the first potential U1 is greater than the second potential U2, Since the second electric potential U2 is greater than the third electric potential, the direction of the first sub-electric field is from the end surface of the first main body 410 toward the second main body 420 to the end surface of the second main body 420 toward the first main body 410; since the second electric potential U2 is greater than the third electric potential, the direction of the second sub-electric field is from the end surface of the second main body 420 toward the third main body 430 to the end surface of the third main body 430 toward the second main body 420; the second sub-electric field has the same properties as the first sub-electric field, and the equipotential surface distribution morphology of the second sub-electric field is also shown in FIG3. In this case, after the particles are guided by the first sub-electric field, the particles will be guided for the second time by the second sub-electric field, and the second sub-electric field can make up for the lack of the first sub-electric field in guiding the particles, so as to ensure that the particles are finally guided to fall vertically into the wafer W.

As shown in Figures 1, 2, 4 and 5, the embodiment of the present application provides a second guiding device 400, which includes multiple main parts and at least one magnetic field forming element. The multiple main parts are arranged in sequence from top to bottom, and each main part is provided with multiple through holes for particles to pass through; the through holes on the multiple main parts correspond to each other; the multiple main parts are magnetic conductors, and each two adjacent main parts are correspondingly provided with a magnetic field forming element, which is used to magnetize the corresponding two adjacent main parts and make the corresponding two adjacent main parts form two different magnetic poles respectively, so as to form a sub-magnetic field between each two adjacent main parts.

Specifically, under such a configuration, multiple main parts all have magnetic conductivity, and the magnetic field forming element is used to magnetize the corresponding two adjacent main parts to form a sub-magnetic field between the opposite side end surfaces of the two adjacent main parts. The magnetic field direction of the sub-magnetic field is related to the magnetic field direction inside the two adjacent main parts, and the magnetic field direction inside the two adjacent main parts is related to the specific magnetization effect of the magnetic field forming element, as shown in Figure 5. The dotted line in Figure 5 represents the magnetic flux lines. For each of the two adjacent main parts, an N magnetic pole is formed on the upper sub-main part, and an S magnetic pole is formed on the lower main part. Therefore, the magnetic field direction of the sub-magnetic field is also from the upper sub-main part to the lower main part. Of course, the embodiment of the present application does not limit the specific types of magnetic poles formed on each of the two adjacent main parts. In another embodiment, an S magnetic pole can be formed on the upper sub-main part, and an N magnetic pole can be formed on the lower main part.

It should be noted that the magnetic field force formed by the guiding device of the embodiment of the present application mainly refers to the Lorentz force, which only changes the direction of the particle's velocity but does not change the magnitude of the particle's velocity. Therefore, it only changes the direction of the particle's movement but does not do work on the particle.

Since each main body is provided with a plurality of through holes for particles to pass through, the magnetic field strength in the solid overlapping area (non-through hole area) of each adjacent main body is relatively high, while the magnetic field strength in the corresponding area of the through hole is relatively low. For details, please refer to the distribution morphology of magnetic flux lines in the sub-magnetic field shown in FIG5 .

The particles sputtered from the target material T carry positive charge. When they move in the sub-magnetic field, they will be subject to a magnetic field force perpendicular to the direction of movement and the direction of the magnetic field. The specific direction of the magnetic field force can be determined by the left-hand rule. Under the action of the magnetic field force, the particles will spirally move along the direction of the magnetic flux lines. For details, please refer to Figure 6. Figure 6 is only used to illustrate the principle of the particles forming spiral motion, and does not mean that the particles present the motion trajectory shown in Figure 6; at the same time, based on the distribution of the magnetic field intensity, the particles will gradually deviate towards the area with lower magnetic field intensity during the spiral motion, and the particles will roughly present the motion trajectory in Figure 5. The solid line in Figure 5 represents the motion trajectory of the particles. Until the particle moves to the vicinity of the central axis of the through hole, the magnetic field force on the particle is minimal, and the effect of the magnetic field force on the particle changing its velocity direction tends to be negligible; specifically, the direction of the particle's ejection velocity V' is different from the direction of the injection velocity V, and the direction of the ejection velocity V' is in the axis direction of the through hole, so the particle no longer makes a spiral motion but is ejected vertically downward from the through hole. It can be seen that the particle tends to fall vertically into the wafer W after passing through the guide device.

By adjusting the intensity of the sub-magnetic field loaded by the magnetic field forming component, the magnitude of the magnetic field force to which the particles are subjected in the sputtering area can be adjusted. Since the movement trajectory of the particles is directly related to the magnitude of the magnetic field force to which they are subjected, a larger magnetic field force will cause serious energy consumption, while a smaller magnetic field force will make it difficult for the particles to fall vertically into the wafer W. Therefore, the guiding device can be pre-tested, and the intensity of the sub-magnetic field loaded by the magnetic field forming component can be adjusted to an appropriate range by observing the movement trajectory of the particles passing through the guiding device.

The embodiment of the present application does not limit the specific type of the magnetic field forming element, which can be a permanent magnet as long as it can produce a magnetizing effect on multiple main parts. In another embodiment, the magnetic field forming element includes a plurality of electromagnetic iron elements, all of which are disposed between two adjacent main parts corresponding to the magnetic field forming element and are evenly arranged along the circumferential direction of the main parts; all of the electromagnetic iron elements in the magnetic field forming element are connected to one of the two adjacent main parts corresponding to the magnetic field forming element through the same magnetic pole end so that a first magnetic pole is formed on one of the connected main parts, and all of the electromagnetic iron elements in the magnetic field forming element are connected to the other of the two adjacent main parts corresponding to the magnetic field forming assembly through the same other magnetic pole end so that a second magnetic pole is formed on the other connected main part. The above-mentioned electromagnetic element can control the sub-magnetic field by turning on and off the power. The magnetic field strength of the sub-magnetic field can be controlled by changing the size of the input current. The magnetic field direction of the sub-magnetic field can also be changed by changing the direction of the current (including changing the winding direction of the coil in the electromagnetic). Therefore, the electromagnetic type magnetic field forming element is undoubtedly more convenient to operate.

Taking two main parts as an example, the guiding device 400 of the embodiment of the present application has two main parts, namely a first main part 410 and a second main part 420. The first main part 410 and the second main part 420 are arranged in sequence from top to bottom. The through hole opened on the first main part 410 is the first through hole H1, and the through hole opened on the second main part 420 is the second through hole H2. The multiple first through holes H1 correspond to the multiple second through holes H2 one by one. Optionally, along the height direction (i.e., the vertical direction) of the process chamber 100, the projections of the first through hole H1 and the second through hole H2 can overlap with each other.

At the same time, the first main body 410 and the second main body 420 are both magnetic conductors, and the magnetic field forming element 440 is one, which is used to magnetize the first main body 410 and the second main body 420, and form a first magnetic pole on the first main body 410, and form a second magnetic pole on the second main body 420, and the first magnetic pole and the second magnetic pole are different, so as to form a first sub-magnetic field between the first main body 410 and the second main body 420.

Specifically, under such a setting, the first main body 410 and the second main body 420 both have magnetic conductivity, and the magnetic field forming element 440 can smoothly magnetize the first main body 410 and the second main body 420, and form a first sub-magnetic field between the relative side end surfaces of the first main body 410 and the second main body 420. The magnetic field direction of the first sub-magnetic field is related to the magnetic flux direction inside the first main body 410 and the second main body 420, and the magnetic flux direction inside the first main body 410 and the second main body 420 is related to the specific magnetization effect of the magnetic field forming element 440. Taking the implementation method shown in Figure 5 as an example, it shows the magnetic flux line distribution morphology of the first sub-magnetic field. The dotted lines in Figure 5 represent the magnetic flux lines. The magnetic field forming component 440 magnetizes the first main body 410 and forms an N magnetic pole on the first main body 410. The magnetic field forming element 440 magnetizes the second main body 420 and forms an S magnetic pole on the second main body 420. Therefore, the magnetic field direction of the first sub-magnetic field is also from the first main body 410 to the second main body 420.

Of course, the embodiment of the present application does not limit the specific types of magnetic poles formed on the first main body 410 and the second main body 420 respectively. In another embodiment, an S magnetic pole can be formed on the first main body 410 and an N magnetic pole can be formed on the second main body 420.

It should be noted that the magnetic field force formed by the guiding device 400 of the embodiment of the present application mainly refers to the Lorentz force, which only changes the velocity direction of the particle but does not change the velocity magnitude of the particle. Therefore, it only changes the movement direction of the particle but does not do work on the particle.

Due to the existence of the first through hole H1 and the second through hole H2, the magnetic field strength in the physically overlapping area of the first main body 410 and the second main body 420 is relatively high, while the magnetic field strength in the corresponding area of the first through hole H1 and the second through hole H2 is relatively low. For details, please refer to the distribution morphology of the magnetic flux lines in the first sub-magnetic field shown in FIG. 5 .

The particles sputtered from the target material T are positively charged. When they move in the first sub-magnetic field, they will be subject to a magnetic field force perpendicular to the direction of movement and the direction of the magnetic field. The specific direction of the magnetic field force can be determined by the left-hand rule. Under the action of the magnetic field force, the particles will move in a spiral along the direction of the magnetic flux lines. For details, please refer to Figure 6. Figure 6 is only used to illustrate the principle of the particles forming a spiral motion, and does not mean that the particles present the motion trajectory shown in Figure 6; at the same time, based on the distribution of the magnetic field intensity, the particles will gradually deviate towards the area with lower magnetic field intensity during the spiral motion, and the particles will roughly present the motion trajectory in Figure 5. The solid line in Figure 5 represents the motion trajectory of the particles. Until the particle moves to the vicinity of the central axis of the first through hole H1 and the second through hole H2, the magnetic field force on the particle is minimal, and the effect of the magnetic field force on the particle changing its velocity direction tends to be negligible; specifically, the direction of the particle's ejection velocity V' is different from the direction of the injection velocity V, and the direction of the ejection velocity V' is located in the axis direction of the second through hole H2, so the particle no longer performs a spiral motion but is ejected vertically downward from the second through hole H2. It can be seen that the particle tends to fall vertically into the wafer W after passing through the guide device 400.

By adjusting the intensity of the first sub-magnetic field loaded by the magnetic field forming element 440, the magnitude of the magnetic field force to which the particles are subjected in the sputtering area can be adjusted. Since the movement trajectory of the particles is directly related to the magnitude of the magnetic field force to which they are subjected, a larger magnetic field force will cause serious energy consumption, while a smaller magnetic field force will make it difficult for the particles to fall vertically into the wafer W. Therefore, the guiding device 400 can be pre-tested, and the intensity of the first sub-magnetic field loaded by the magnetic field forming component 440 can be adjusted to an appropriate range by observing the movement trajectory of the particles passing through the guiding device 400.

The embodiment of the present application does not limit the specific type of the magnetic field forming element 440, which can be a permanent magnet, as long as it can generate a magnetization effect on the first main body 410 and the second main body 420. In another embodiment, as shown in FIG7 , the magnetic field forming element 440 of the embodiment of the present application can be selected as an electromagnetic iron element, which can control the first sub-magnetic field by turning on and off the power, and can control the magnetic field strength of the first sub-magnetic field by changing the size of the input current. The magnetic field direction of the first sub-magnetic field can also be changed by changing the direction of the current (including changing the winding direction of the coil in the electromagnetic iron), so the electromagnetic iron type magnetic field forming element 440 undoubtedly has more convenient operation.

Regardless of whether the magnetic field forming element 440 is a permanent magnet or an electromagnetic iron element, it can be directly connected to the first main body 410 and the second main body 420 to enhance the magnetization effect. As shown in Figures 4 and 5, the N magnetic pole end of the magnetic field forming component 440 is connected to the first main body 410, and the first main body 410 is magnetized to form an N magnetic pole. The S magnetic pole end of the magnetic field forming element 440 is connected to the second main body 420, and the second main body 420 is magnetized to form an S magnetic pole. At this time, the magnetic field direction of the first sub-magnetic field is also from the first main body 410 to the second main body 420.

The embodiment of the present application does not limit the specific connection relationship between the magnetic field forming element 440 and the first main body 410 and the second main body 420. The N magnetic pole end of the magnetic field forming element 440 can also be connected to the second main body 420, and the S magnetic pole end of the magnetic field forming element 440 can also be connected to the first main body 410.

In order to avoid large deviations in the magnetic field strength of each region of the first sub-magnetic field, as shown in FIG4 , the magnetic field forming element 440 of the embodiment of the present application is an electromagnetic iron element, and there are multiple electromagnetic iron elements, all of which are disposed between the first main body 410 and the second main body 420, and are evenly arranged along the edge of the first main body 410; all of the electromagnetic iron elements are connected to the first main body 410 through the same magnetic pole end to form a first magnetic pole on the first main body 410, and all of the electromagnetic iron elements are connected to the second main body 420 through the same other magnetic pole end to form a second magnetic pole on the second main body 420.

Specifically, since all the electromagnetic iron elements are evenly arranged along the edge of the first main body 410, all the electromagnetic iron elements are also evenly arranged along the edge of the second main body 420, so that the electromagnetic iron elements apply a more evenly distributed magnetization effect to the magnetic field inside the first main body 410 and the second main body 420, thereby making the magnetic field distribution of the first sub-magnetic field more balanced, which is conducive to a more uniform and regular regulation of the particles. In this embodiment, all the electromagnetic iron elements are connected to the first main body 410 through the N magnetic pole end (or the S magnetic pole end), and correspondingly, all the electromagnetic iron elements are connected to the second main body 420 through the S magnetic pole end (or the N magnetic pole end).

It should be noted that the embodiment of the present application does not limit the specific number of the magnetic field forming elements 440, which can be four, seven, ten, etc.

The guiding device 400 of the embodiment of the present application can also adjust the guiding effect on the particles in other ways. In another embodiment, as shown in Figure 8, the guiding device 400 of the embodiment of the present application has three main parts, namely a first main part 410, a second main part 420 and a third main part 430. The first main part 410, the second main part 420 and the third main part 430 are arranged in sequence from top to bottom. The through hole opened on the first main part 410 is the first through hole H1, and the through hole opened on the second main part 420 is the second through hole H2. The third main part 430 is provided with a plurality of third through holes. The plurality of first through holes H1, the plurality of second through holes H2 and the plurality of third through holes correspond to each other one by one, that is, along the height direction of the process chamber 100, the projections of the first through hole H1, the second through hole H2 and the third through hole can overlap with each other.

Meanwhile, the first main body 410, the second main body 420 and the third main body 430 are all magnetic conductors, and there are two magnetic field forming components, namely, a first magnetic field forming element and a second magnetic field forming element, wherein the first magnetic field forming element is used to magnetize the first main body 410 and the second main body 420, and to form a first magnetic pole on the first main body 410, and to form a second magnetic pole on the second main body 420, and the first magnetic pole is connected to the magnetic field of the first main body 410. The second magnetic poles are different to form a first sub-magnetic field between the first main body 410 and the second main body 420; the second magnetic field forming element is used to magnetize the second main body 420 and the third main body 430, and to form a second magnetic pole on the second main body 420, and to form a third magnetic pole on the third main body 430, and the second magnetic pole is different from the third magnetic pole to load a second sub-magnetic field between the second main body 420 and the third main body 430.

Specifically, under such a configuration, the first main body 410, the second main body 420 and the third main body 430 have magnetic conductivity, and the first magnetic field forming element can smoothly magnetize the first main body 410 and the second main body 420, and form a first sub-magnetic field between the opposite side end surfaces of the first main body 410 and the second main body 420. The second magnetic field forming element can smoothly magnetize the second main body 420 and the third main body 430, and form a second sub-magnetic field on the opposite side end surfaces of the second main body 420 and the third main body 430; the second sub-magnetic field can be configured to have the same properties as the first sub-magnetic field, so the magnetic flux distribution morphology of the second sub-magnetic field can also refer to FIG. 5. In this case, after the particles are guided by the first sub-magnetic field, the particles are guided again by the second sub-magnetic field, and the second sub-magnetic field can make up for the deficiency of the first sub-magnetic field in guiding the particles, so as to ensure that the particles are finally guided to fall vertically into the wafer W. In this embodiment, since the magnetic field forming element 440 and the magnetic field forming element jointly magnetize the second main body 420, the speed at which the second main body 420 is magnetized is significantly accelerated.

In an optional solution, the first main body 410 and the second main body 420 of the embodiment of the present application can both be plate-shaped structural members, and the first main body 410 and the second main body 420 are parallel to each other.

It should be understood that, under such a setting, taking the guide device 400 used to form an electric field (magnetic field) as an example, the electric field (magnetic field) formed has a certain regularity, as shown in FIG. 3 (FIG. 5), that is, the electric field (magnetic field) intensity in the area corresponding to the first through hole H1 and the second through hole H2 is relatively low, while the electric field (magnetic field) intensity in the solid overlap area around the first through hole H1 and the second through hole H2 is relatively high, and the entire guide device 400 has a regular electric field. (Magnetic field) intensity distribution, so that particles incident from different first through holes H1 can be emitted from the second through holes H2 at roughly the same angle, which is beneficial to the overall adjustment of the electric field (magnetic field) formed by the guiding device 400, and can avoid the problem that there are great differences in the emission angles of particles emitted from different second through holes H2, resulting in the overall adjustment of the electric field (magnetic field) formed by the guiding device 400 and the inability to take into account the states of most particles.

Of course, the embodiment of the present application does not limit the specific configuration of the first main body 410 and the second main body 420, and they can also be block-shaped structural parts, etc.

Whether it is the first type of guiding device 400 or the second type of guiding device 400, the guiding effect on the particles can be enhanced by increasing the number of guiding devices 400. Specifically, as shown in Figure 9, the guiding device 400 of the embodiment of the present application can be multiple, and each guiding device 400 includes multiple main parts (such as the first main part 410 and the second main part 420 in Figure 9, etc.), and the multiple guiding devices 400 are arranged in sequence from top to bottom.

When the guide device 400 is used to form an electric field, in two adjacent main parts belonging to different guide devices, the potential of the main part located at the top is greater than the potential of the main part located at the bottom. Specifically, as shown in FIG9 , the potential of the second main part 420 in the guide device 400 located at the top is greater than the potential of the first main part 410 in the guide device 400 located at the bottom. Under this structural layout, all the sub-electric fields formed by the guiding devices 400 are from top to bottom along the height direction of the process chamber 100, that is, all the sub-electric fields form a directional and uninterrupted electric field group. In this way, when the particles pass through multiple guiding devices 400 from top to bottom, they will be affected by multiple electric fields to guide the particles multiple times. The subsequent electric field can make up for the insufficient guiding effect of the previous electric field on the particles to ensure that the particles are finally guided to fall vertically into the wafer W.

When the guide device 400 is used to form a magnetic field, the magnetic poles formed on two adjacent main bodies belonging to different guide devices are different. Specifically, as shown in FIG9 , the magnetic poles formed on the second main body 420 in the upper guide device 400 are different from the magnetic poles formed on the first main body 410 in the lower guide device 400. Under this structural layout, not only is a sub-magnetic field for guiding and adjusting the particles formed inside the guiding device 400, but a sub-magnetic field can also be formed between adjacent guiding devices 400. The sub-magnetic fields formed by all the guiding devices 400 form an uninterrupted magnetic field group, so that the particles will be affected by multiple magnetic fields in the process of passing through multiple guiding devices 400 from top to bottom, so as to guide the particles multiple times. The subsequent magnetic field can make up for the insufficient guiding effect of the previous magnetic field on the particles, so as to ensure that the particles are finally guided to fall vertically into the wafer W.

Since the target material T has irregularities when sputtering particles and the number of through holes is small, there is a probability that particles cannot fall into each through hole, which will cause waste of the target material T and blockage of each through hole.

Based on this, in the embodiment of the present application, the through holes on each main body are arranged in a honeycomb shape on the main body. For example, as shown in FIG. 2 , a plurality of first through holes H1 can be arranged in a honeycomb shape on the first main body 410, and a plurality of second through holes H2 can be arranged in a honeycomb shape on the second main body 420. It should be understood that, based on the honeycomb structure, each main body is equivalent to being set as a mesh structure, the number of through holes is increased, and the distribution is dense, and the size of the solid part between the holes on each main body is smaller. Such a setting can undoubtedly effectively ensure that particles fall into each through hole and avoid particles from being deposited in the solid part of the main body.

When the through holes are in a honeycomb configuration, each through hole may be a regular hexagon, but the embodiment of the present application does not limit the specific shape of the through holes, and they may also be regular pentagons, regular octagons, or even irregular shapes.

The embodiment of the present application does not limit the specific aperture width size of the through hole; however, if the aperture width value of the through hole is too large, it will weaken the guiding effect of the guiding device 400 on the particles. If the aperture width value of the through hole is too small, the particles will easily block the through hole after long-term use, which will make the function of the guiding device 400 ineffective. Based on this, in an optional scheme, the maximum aperture width value range of the through hole in the embodiment of the present application can be greater than or equal to 30mm and less than or equal to 100mm; specifically, it can be selected as 35mm, 50mm, 75mm, 90mm, etc. Under such a setting, the aperture width value of the through hole can not only prevent it from being blocked, but also take into account the guiding effect of the guiding device 400.

In the embodiment of the present application, there are many ways to arrange the multiple main parts. For example, taking two main parts as an example, as shown in FIG1 , the edges of the first main part 410 and the second main part 420 are both extended to form a support portion, and the support portion extends to the bottom wall of the process chamber 100. In another embodiment, the main part can also be connected to the inner wall of the process chamber 100 through its circumferential edge. For example, as shown in FIG1 , the first main part 410 can be connected to the inner wall of the process chamber 100 through its circumferential edge, and the second main part 420 can be connected to the inner wall of the process chamber 100 through its circumferential edge.

It should be understood that, under such a configuration, particles will not pass through the gap between the circumferential edge of each main body and the inner wall of the process chamber 100, thereby ensuring that all particles are guided by the guiding device 400 so that all particles tend to fall vertically into the wafer W; at the same time, no additional connection structure is required on each main body, thereby simplifying the structure of each main body.

The embodiment of the present application does not limit the intensity of the electric field. The electric field intensity range of the embodiment of the present application can be greater than or equal to 1000V/m and less than or equal to 100000V/m. At this time, the electric field intensity range of the electric field is more suitable. The electric field here includes the aforementioned sub-electric field generated by the guiding device. It should be noted that if the electric field intensity of the electric field is less than 1000V/m, the electric field force on the particles is relatively small and it is difficult to be guided to fall vertically into the wafer W. If the electric field intensity of the electric field is greater than 100000V/m, two adjacent main parts (such as the first main part 410 and the second main part 420) will be broken down due to current overload.

In an optional solution, as shown in FIG1 , the process chamber 100 may include an outer chamber 110 and a protective cover 120, wherein the protective cover 120 separates the sputtering region from the outer chamber 110. In this configuration, the protective cover 120 can confine the sputtering process to the sputtering region to prevent particles from sputtering to the outer chamber 110, thereby extending the service life of the process chamber 100 as a whole.

In combination with the implementation in which each main body is connected to the inner wall of the process chamber 100 via the peripheral edge, each main body can be directly connected to the inner wall of the protective cover 120 via the peripheral edge.

The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for implementing the same purpose and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and modifications herein without departing from the spirit and scope of the present disclosure.

100: Process chamber 110: External chamber 120: Protective cover 200: Carrier base 300: Magnetron sputtering assembly 310: Magnetron 320: Driving mechanism 400: Guide device 410: First main body 420: Second main body 430: Third main body 440: First magnetic field forming assembly H1: First through hole H2: Second through hole T: Target U1: First potential U2: Second potential W: Wafer

The present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion. Figure 1 is a schematic diagram of the structure of the magnetron sputtering device disclosed in the embodiment of the present application; Figure 2 is a top view of the guiding device disclosed in the embodiment of the present application; Figure 3 is a cross-sectional view of the first guiding device in the A-A direction in Figure 2; Figure 4 is a schematic diagram of the structure of the second guiding device disclosed in the embodiment of the present application; Figure 5 is a cross-sectional view of the second guiding device in the A-A direction in Figure 2; Figure 6 is a schematic diagram of the principle of the second guiding device disclosed in the embodiment of the present application guiding particles; Figure 7 is a schematic diagram of the structure of the magnetic field forming element disclosed in the embodiment of the present application; Figure 8 is a schematic diagram of the structure of the guiding device disclosed in the embodiment of the present application including three main parts; Figure 9 is a schematic diagram of the structure of the magnetron sputtering device disclosed in the embodiment of the present application including multiple guiding devices.

410: First main body

420: Second main body

H1: First through hole

H2: Second through hole

Claims (10)

A magnetron sputtering device includes: a process chamber; a target material, arranged at the top of the process chamber; a supporting base, used to support a wafer, the supporting base is arranged in the process chamber and is located below the target material; a guiding device, arranged between the target material and the supporting base, the guiding device is configured to form a magnetic field in the process chamber, the magnetic field is used to adjust the movement trajectory of particles sputtered by the target material, so that the particles tend to be vertically deposited on the wafer; the guiding device includes a plurality of main parts and at least one magnetic field forming element, the plurality of main parts are arranged in sequence from top to bottom, each of the main parts is provided with a plurality of through holes for the particles to pass through; the through holes on the plurality of main parts correspond to each other. The magnetron sputtering device as described in claim 1, wherein the plurality of main parts are all magnetic conductors, and each of the two adjacent main parts is provided with a corresponding magnetic field forming element for magnetizing the corresponding two adjacent main parts and making the corresponding two adjacent main parts form two different magnetic poles respectively, so as to form a sub-magnetic field between each of the two adjacent main parts. The magnetron sputtering device as described in claim 2, wherein the main body is two, namely a first main body and a second main body, the first main body and the second main body are arranged in sequence from top to bottom, the through hole opened on the first main body is a first through hole, the through hole opened on the second main body is a second through hole, and the plurality of first through holes correspond to the plurality of second through holes one by one; the magnetic field forming element is one, which is used to magnetize the first main body and the second main body, and form a first magnetic pole on the first main body, and form a second magnetic pole on the second main body, and the first magnetic pole is different from the second magnetic pole, so as to form a first sub-magnetic field between the first main body and the second main body. A magnetron sputtering device as described in claim 2, wherein the main parts are three, namely a first main part, a second main part and a third main part, the first main part, the second main part and the third main part are arranged in sequence from top to bottom, the through hole opened on the first main part is a first through hole, the through hole opened on the second main part is a second through hole, the through hole opened on the third main part is a third through hole, and the plurality of first through holes, the plurality of second through holes and the plurality of third through holes correspond to each other one by one; the magnetic field forming elements are two, namely a first magnetic field forming element and a second magnetic field forming element, the The first magnetic field forming element is used to magnetize the first main body and the second main body, and form a first magnetic pole on the first main body, and form a second magnetic pole on the second main body, and the first magnetic pole is different from the second magnetic pole, so as to form a first sub-magnetic field between the first main body and the second main body; the second magnetic field forming element is used to magnetize the second main body and the third main body, and form the second magnetic pole on the second main body, and form a third magnetic pole on the third main body, and the second magnetic pole is different from the third magnetic pole, so as to form a second sub-magnetic field between the second main body and the third main body. The magnetron sputtering device as described in claim 2, wherein the magnetic field forming element includes a plurality of electromagnetic iron elements, all of which are disposed between two adjacent main parts corresponding to the magnetic field forming element and are evenly arranged along the circumferential direction of the main part; all of which are connected to one of the two adjacent main parts corresponding to the magnetic field forming element through the same magnetic pole end, so that a first magnetic pole is formed on one of the connected main parts, and all of which are connected to the other of the two adjacent main parts corresponding to the magnetic field forming assembly through the same other magnetic pole end, so that a second magnetic pole is formed on the other connected main part. A magnetron sputtering device as described in any one of claim 2-4, wherein the guide device is multiple, and the multiple guide devices are arranged in sequence from top to bottom; the magnetic poles formed on the two adjacent main parts belonging to different guide devices are different. A magnetron sputtering device as described in any one of claims 2 to 4, wherein the plurality of main parts are plate-shaped structural parts, and the plurality of main parts are parallel to each other. A magnetron sputtering device as described in any one of claims 2 to 4, wherein the through holes on each of the main body parts are arranged in a honeycomb shape on the main body part. A magnetron sputtering device as described in any one of claims 2 to 4, wherein the maximum aperture width of the through hole is in the range of greater than or equal to 30 mm and less than or equal to 100 mm. A magnetron sputtering device as described in any one of claims 2 to 4, wherein the main body is connected to the inner wall of the process chamber through its circumferential edge.