TWI867304B - Sensing device - Google Patents

Abstract

A sensing device has a sensing area, a peripheral area and a pad area between the sensing area and the peripheral area and includes a sensing element, a pad and a metal strip. The sensing element is disposed in the sensing area. The pad is disposed in the pad area and electrically connected to the sensing element. The metal strip is disposed in the peripheral area, and an extension direction of the metal strip is parallel to an extension direction of the pad.

Description

Sensing device

The present invention relates to a photoelectric device, and in particular to a sensing device.

Due to their excellent performance, photo sensors have been widely used in security inspection, industrial testing and medical diagnosis. For example, in medical diagnosis, X-ray sensors can be used to capture images of the human chest, blood vessels, teeth, etc. This type of sensor mainly includes PIN diodes and thin film transistors (TFT). PIN diodes can convert light energy into electrical signals, while thin film transistors are used to read the electrical signals measured by PIN diodes.

Generally speaking, the manufacturing method of the photo sensor is to complete the multi-layer film stacking structure of the PIN diode and the thin film transistor on the temporary substrate, first cover it with a layer of protective film, then remove the temporary substrate, and transfer the multi-layer film stacking structure to a suitable motherboard, and then use laser cutting to separate the multi-layer film stacking structure into multiple sensing modules, and then tear off the protective film. However, since the properties of the film layer near the laser cutting line will be degraded by the heat of the laser, when the protective film is torn off, these degraded film layers are easily peeled off by the protective film, and the peeling range of the film layer may even extend inward, resulting in poor production yield and reliability of the sensor.

The present invention provides a sensing device having good production yield and reliability.

An embodiment of the present invention provides a sensing device having a sensing area, a pad area and a peripheral area, wherein the pad area is located between the sensing area and the peripheral area, and includes: a sensing element located in the sensing area; a pad located in the pad area and electrically connected to the sensing element; and a strip metal located in the peripheral area, wherein the extension direction of the strip metal is parallel to the extension direction of the pad.

In one embodiment of the present invention, the length of the strip metal is greater than its width.

In one embodiment of the present invention, the metal strip is physically separated from the pad.

In one embodiment of the present invention, the strip metal is aligned with the pad.

In one embodiment of the present invention, the metal strips are staggered with the pads.

In one embodiment of the present invention, the pitch of the metal strips is less than or equal to the pitch of the pads.

In one embodiment of the present invention, the width of the metal strip is smaller than the distance between the pads.

In one embodiment of the present invention, the arrangement density of the above-mentioned strip metal is greater than or equal to the arrangement density of the pads.

In one embodiment of the present invention, the aforementioned strip metal has a single-layer or double-layer structure.

In an embodiment of the present invention, the extending direction of the strip metal is perpendicular to the side of the sensing device.

In an embodiment of the present invention, the width of the metal strip is 1 μm to 50 μm.

In an embodiment of the present invention, the minimum distance between the strip metal and the side of the sensing device is 50 μm to 500 μm.

In one embodiment of the present invention, the pad area surrounds a portion of the sensing area.

In one embodiment of the present invention, the peripheral area surrounds the pad area and the sensing area.

In one embodiment of the present invention, the sensing element includes an upper electrode, a lower electrode, and a photoelectric conversion layer located between the upper electrode and the lower electrode, and the strip metal and the lower electrode belong to the same film layer.

In an embodiment of the present invention, the sensing device further includes a common electrode electrically connected to the sensing element, and the common electrode and the strip metal belong to the same film layer.

In an embodiment of the present invention, the sensing device further includes a switch element electrically connected to the sensing element, and the source of the switch element and the strip metal belong to the same film layer.

In order to make the above features and advantages of the present invention more clearly understood, embodiments are specifically cited below and described in detail with reference to the accompanying drawings.

In the accompanying drawings, for the sake of clarity, the thickness of layers, films, panels, regions, etc. is magnified. Throughout the specification, the same figure markings represent the same elements. It should be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to another element, or an intermediate element can also exist. On the contrary, when an element is referred to as being "directly on" or "directly connected to" another element, there is no intermediate element. As used herein, "connection" can refer to physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" can be the presence of other elements between two elements.

The terms used herein are for the purpose of describing specific embodiments only and are not restrictive. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one" or to mean "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "include" and/or "include" specify the presence of the features, regions, wholes, steps, operations, elements and/or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and/or combinations thereof.

In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is flipped, the elements described as being on the "lower" side of the other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" can include both "lower" and "upper" orientations, depending on the specific orientation of the figure. Similarly, if the device in one figure is flipped, the elements described as being "lower" or "below" other elements will be oriented as being "above" other elements. Therefore, the exemplary term "lower" or "below" can include both above and below orientations.

As used herein, "about," "approximately," or "substantially" includes the stated value and the average value within an acceptable deviation range of the specified value determined by a person of ordinary skill in the art, taking into account the measurement in question and the specific amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about," "approximately," or "substantially" can select a more acceptable deviation range or standard deviation depending on the optical property, etching property, or other property, and can apply to all properties without a single standard deviation.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by ordinary technicians in the field to which the present invention belongs. It will be further understood that those terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless expressly defined as such in this document.

Exemplary embodiments are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments. Therefore, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and/or tolerances are to be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but rather include shape deviations that result, for example, from manufacturing. For example, a region shown or described as flat may typically have rough and/or nonlinear features. Furthermore, sharp corners shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the exact shape of the regions and are not intended to limit the scope of the claims.

FIG. 1A is a schematic top view of a sensing device 10 according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view taken along the section line A-A’ of FIG. 1A. FIG. 1C is a schematic cross-sectional view taken along the section line B-B’ of FIG. 1A. Referring to FIG. 1A to FIG. 1C simultaneously, the sensing device 10 has a sensing area AA, a pad area BA, and a peripheral area CA, and the pad area BA is located between the sensing area AA and the peripheral area CA. The sensing device 10 includes: a sensing element SD, located in the sensing area AA; a pad PD, located in the pad area BA and electrically connected to the sensing element SD; and a strip metal SM, located in the peripheral area CA, and the extension direction of the strip metal SM is parallel to the extension direction of the pad PD.

In this embodiment, the strip metal SM disposed in the peripheral area CA is used to prevent the film from peeling off, thereby improving the production yield and reliability of the sensing device 10. The following further describes the implementation of each element and film layer of the sensing device 10 with reference to the drawings, but the present invention is not limited thereto.

Please refer to FIG. 1A and FIG. 1B at the same time. In this embodiment, a plurality of sensing elements SD arranged in an array may be provided in the sensing area AA of the sensing device 10. The sensing element SD is, for example, a PIN diode, which is used to convert light energy into an electronic signal. For example, the sensing element SD may be provided on the substrate SB, and the sensing element SD may include an upper electrode TE, a lower electrode BE, and a photoelectric conversion layer PN, wherein the upper electrode TE is located on the photoelectric conversion layer PN, the photoelectric conversion layer PN is located on the lower electrode BE, and the photoelectric conversion layer PN may be connected to the lower electrode BE through an opening O1 in the insulating layer I2. The photoelectric conversion layer PN is located between the upper electrode TE and the lower electrode BE, and the upper electrode TE and the lower electrode BE are electrically independent of each other. The photoelectric conversion layer PN can absorb visible light from above the sensing element SD and generate a corresponding electrical signal.

The material of the lower electrode BE may include metals, such as chromium (Cr), gold (Au), silver (Ag), copper (Cu), tin (Sn), lead (Pb), tungsten (W), molybdenum (Mo), neodymium (Nd), titanium (Ti), tantalum (Ta), aluminum (Al), zinc (Zn), or alloys of any combination of the above metals, or stacks of the above metals and/or alloys, but not limited thereto. The lower electrode BE may also include other conductive materials, such as metal nitrides, metal oxides, metal oxynitrides, stacks of metals and other conductive materials, or other materials with conductive properties.

The photoelectric conversion layer PN may include an N-type semiconductor material layer, an intrinsic semiconductor material layer, and a P-type semiconductor material layer sequentially formed on the lower electrode BE. For example, the intrinsic semiconductor material layer is intrinsic amorphous silicon. The N-type semiconductor material layer is amorphous silicon doped with phosphorus (P). The P-type semiconductor material layer is amorphous silicon doped with boron (B), but the present invention is not limited thereto.

The upper electrode TE may be a light-transmitting electrode. For example, the material of the upper electrode TE may include indium tin oxide (InSnO), indium zinc oxide (InZnO), aluminum zinc oxide (AlZnO), aluminum indium oxide (AlInO), indium oxide (InO), gallium oxide (GaO), carbon nanotubes, silver nanoparticles, metals or alloys with a thickness of less than 60 nanometers (nm), organic transparent conductive materials, or other suitable transparent conductive materials.

In some embodiments, the sensing device 10 may further include a wavelength conversion layer (not shown), which may be disposed above the plurality of sensing elements SD to convert light (e.g., X-rays) from the upper side of FIG. 1B into visible light, and the wavelength conversion layer may include a material such as Cesium Iodide (CsI).

In some embodiments, the sensing device 10 may further include a plurality of switch elements SW. The plurality of switch elements SW are disposed in the sensing area AA, and the plurality of switch elements SW may be electrically connected to the plurality of sensing elements SD, respectively, to read the electrical signals detected by the sensing elements SD. For example, referring to FIG. 1B , the switch element SW may be disposed on the substrate SB, and the switch element SW may include a semiconductor layer CH, a source SE, a drain DE, and a gate GE, wherein the barrier layer BF is located between the substrate SB and the gate GE, the insulating layer I1 is located between the gate GE and the semiconductor layer CH, the source SE and the drain DE are respectively connected to the two ends of the semiconductor layer CH, the insulating layer I2 is located on the semiconductor layer CH, the source SE, and the drain DE, and the source SE is electrically connected to the bottom electrode BE of the sensing element SD. In addition, the source SE and the bottom electrode BE of the sensing element SD may belong to the same film layer.

The material of the semiconductor layer CH is, for example, a metal oxide material, that is, the switch element SW may be a metal oxide thin film transistor (Metal Oxide Transistor), but the present invention is not limited thereto. In other embodiments, the switch element SW may also be a low temperature polycrystalline silicon thin film transistor (LTPS TFT), a microcrystalline silicon thin film transistor (micro-Si TFT) or an amorphous silicon thin film transistor (Amorphous Silicon TFT, a-Si TFT). In addition, it should be noted that the gate GE, the source SE, the drain DE, the barrier layer BF and the insulating layers I1 and I2 may be formed by materials and methods known to a person of ordinary skill in any technical field, and therefore will not be elaborated here.

In some embodiments, the sensing device 10 may further include an insulating layer I3, a common electrode CM and an insulating layer I4, wherein the insulating layer I3 may be disposed on the switching element SW and the sensing element SD; the common electrode CM may be disposed on the insulating layer I3, and the common electrode CM may be electrically connected to the upper electrode TE through an opening O2 in the insulating layer I3; and the insulating layer I4 may be located on the common electrode CM.

The material of the common electrode CM may include metal, alloy, metal nitride, metal oxide, metal oxynitride, other conductive materials, or a stacked layer of at least two of the aforementioned materials.

Referring to FIG. 1A , the pad area BA of the sensing device 10 may surround a portion of the sensing area AA, and the peripheral area CA may surround the pad area BA, but the present invention is not limited thereto, and the configurations of the sensing area AA, the pad area BA, and the peripheral area CA may be varied as needed. Specifically, in the present embodiment, the pad area BA is adjacent to the sides A1 and A2 of the sensing area AA, and a plurality of pads PD may be arranged in the pad area BA along the sides A1 and A2. The plurality of pads PD may extend approximately from the sides A1 and A2 of the sensing area AA toward the sides S1 and S2 of the sensing device 10, respectively, and the extension direction of the pads PD may be approximately perpendicular to the adjacent sides A1 and A2 or the sides S1 and S2. The spacing G1 between multiple pads PD can be the same, but is not limited to this. For example, multiple pads PD can be divided into zones according to the objects they are electrically connected to, and the spacing G2 between adjacent zones can be slightly larger than the spacing G1 between pads PD in the same zone. The material of the pads PD can include transparent conductive materials such as indium tin oxide, indium zinc oxide, aluminum zinc oxide, aluminum indium oxide, indium oxide or gallium oxide.

In this embodiment, the metal strip SM may be disposed adjacent to the sides B1, B2 of the pad area BA and the sides S1, S2 of the sensing device 10, and the metal strip SM may extend roughly from the sides B1, B2 of the pad area BA toward the sides S1, S2 of the sensing device 10, respectively, and the extension direction of the metal strip SM may be roughly perpendicular to the sides S1, S2 of the sensing device 10, so that the extension direction of the metal strip SM is roughly parallel to the extension direction of the pad PD. A plurality of metal strips SM may be arranged in the peripheral area CA along the sides B1 and B2, so that when the protective film on the insulating layer I3 is torn off from the side S1 of the sensing device 10, the metal strips SM can prevent the film layers below it (such as the barrier layer BF, the insulating layers I1, I2 and the planar layer PL) from being peeled off. The material of the metal strips SM is, for example, chromium, gold, silver, copper, tin, lead, uranium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, or any combination of the above metals, or a stack of the above metals and/or alloys, but the present invention is not limited thereto.

In this embodiment, the metal strip SM can be arranged in alignment with the pad PD, and the metal strip SM is physically separated from the pad PD. In other words, each metal strip SM can be arranged at an extension of the corresponding pad PD, and the arrangement density of the metal strip SM can be equal to the arrangement density of the pad PD, but the present invention is not limited thereto.

In some embodiments, the pitch of the metal strip SM (width Ws plus spacing G3) may be similar to or equal to the pitch of the pad PD (width Wp plus spacing G1). In some embodiments, the width Ws of the metal strip SM may be approximately 1 μm to 50 μm, such as 10 μm, 30 μm or 40 μm, and the length Ls of the metal strip SM is greater than the width Ws. In some embodiments, the minimum distance D1, D2 from the metal strip SM to the sides S1, S2 of the sensing device 10 may be approximately 50 μm to 500 μm, such as 150 μm, 250 μm or 400 μm, so as to avoid making the frame of the sensing device 10 too large.

Please refer to Figure 1C. In this embodiment, the pad PD can be set on the electrode CM' belonging to the same film layer as the common electrode CM, and the pad PD can be electrically connected to the electrode CM' through the opening O3 of the insulating layer I4, so that the pad PD can be electrically connected to the drain DE of the switching element SW through the electrode CM' and the conductive layer M2.

In some embodiments, the film layer used to form the common electrode CM may extend to the peripheral area CA and be patterned to form a strip metal SM1. In other words, the strip metal SM1 may belong to the same film layer as the common electrode CM. In addition, the conductive layer M2 used to form the source SE and drain DE of the switch element SW and the bottom electrode BE of the sensing element SD may also extend to the peripheral area CA and be patterned to form a strip metal SM2. In other words, the strip metal SM2 may belong to the same film layer as the source SE and drain DE of the switch element SW and the bottom electrode BE of the sensing element SD. Thus, the metal strip SM may include metal strips SM1 and SM2 to have a double-layer structure, and the metal strips SM1 and SM2 may be sandwiched between the insulating layer I2 and the insulating layer I3. In other embodiments, the metal strip SM may include only the metal strip SM1 or the metal strip SM2 to have a single-layer structure.

In the following, other embodiments of the present invention are further described using FIGS. 2 to 5 , and the component numbers and related contents of the embodiments of FIGS. 1A to 1C are used, wherein the same numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, reference can be made to the embodiments of FIGS. 1A to 1C , and they will not be repeated in the following description.

FIG2 is a partial cross-sectional schematic diagram of a sensing device 20 according to an embodiment of the present invention. The sensing device 20 may include: a substrate SB, a barrier layer BF, an insulating layer I1, a conductive layer M2, an insulating layer I2, an insulating layer I3, an electrode CM', an insulating layer I4, a pad PD, and a strip metal SM, wherein the pad PD is located in the pad area BA, and the strip metal SM is located in the peripheral area CA. The main difference between the sensing device 20 shown in FIG2 and the sensing device 10 shown in FIG1A to FIG1C is that the sensing device 20 further includes a chip bonding assembly CF.

For example, in the present embodiment, the chip bonding assembly CF may include a base plate BS, a metal wire WR, and a conductive bump BP. The metal wire WR may be disposed on the base plate BS, and one end of the metal wire WR may be connected to the conductive bump BP, and the other end of the metal wire WR may be electrically connected to, for example, a chip disposed on the chip bonding assembly CF (not shown). In addition, the conductive bump BP may also be electrically connected to the pad PD via, for example, a conductive adhesive AF. In this way, the chip on the chip bonding assembly CF may transmit a signal to the switch element SW via the metal wire WR, the conductive bump BP, the conductive adhesive AF, the pad PD, and the electrode CM'.

In some embodiments, the chip bonding assembly CF may further include an insulating layer SR, which may cover a portion of the metal wire WR to prevent the metal wire WR from having unnecessary electrical connections with other components or film layers. However, since the insulating layer SR may not be able to completely cover the exposed metal wire WR, for example, a portion Pw of the metal wire WR may be exposed between the conductive bump BP and the insulating layer SR, and the insulating layer covering the strip metal SM may be peeled off during the manufacturing process, causing the strip metal SM to be exposed. In this case, after the chip bonding assembly CF is folded back in the direction Y, a portion Pw of the metal wire WR may be pressed down and contact the strip metal SM. Therefore, if the width of the metal wire WR is similar to or equal to the width of the pad PD, the width of the strip metal SM is preferably smaller than the distance between the metal wire WR or the pad PD, so that the chip bonding assembly CF and the strip metal SM are electrically separated, thereby avoiding a short circuit between two adjacent pads PD through the metal wire WR and the strip metal SM of the chip bonding assembly CF.

3 is a schematic top view of a sensing device 30 according to an embodiment of the present invention. The sensing device 30 has a sensing area AA, a pad area BA, and a peripheral area CA, and includes: a sensing element SD located in the sensing area AA; a pad PD located in the pad area BA; and a strip metal SM located in the peripheral area CA, and the extension direction of the strip metal SM is parallel to the extension direction of the adjacent pad PD.

The main difference between the sensing device 30 shown in FIG3 and the sensing device 10 shown in FIGS. 1A to 1C is that the pad area BA of the sensing device 30 may surround a portion of the sensing area AA, and the peripheral area CA may surround the pad area BA and a portion of the sensing area AA. Specifically, in this embodiment, the pad area BA may be adjacent to the sides A1 and A2 of the sensing area AA, and the peripheral area CA may be adjacent to the pad area BA and a portion of the sides A3 and A4 of the sensing area AA. In other words, although no pads PD are disposed on the outer sides of the sensing area AA, some strip metal SM can still be disposed on the outer sides of the sensing area AA near the pads PD to prevent the film layer from being peeled off on the outer sides of the sensing area AA near the pads PD.

In some embodiments, a double row of strip metal SM may be disposed in the peripheral area CA of the sensing device 30. Alternatively, in other embodiments, three or more rows of strip metal SM may be disposed in the peripheral area CA of the sensing device 30, which can also prevent the peripheral film layer from peeling off.

4 is a schematic top view of a sensing device 40 according to an embodiment of the present invention. The sensing device 40 has a sensing area AA, a pad area BA, and a peripheral area CA, and includes: a sensing element SD located in the sensing area AA; a pad PD located in the pad area BA; and a strip metal SM located in the peripheral area CA, and the extension directions of the strip metal SM and the pad PD are perpendicular to the extension directions of the adjacent side edges S1, S2, S3, S4.

The main difference between the sensing device 40 shown in FIG. 4 and the sensing device 10 shown in FIGS. 1A to 1C is that the pad area BA of the sensing device 40 surrounds a portion of the sensing area AA, and the peripheral area CA can surround the pad area BA and the sensing area AA. Specifically, in this embodiment, the pad area BA can be adjacent to the sides A1 and A2 of the sensing area AA, and the peripheral area CA can be adjacent to the pad area BA and the sides A3 and A4 of the sensing area AA. In other words, the strip metal SM can be disposed on the four sides S1, S2, S3, and S4 of the sensing device 40, and the strip metal SM can be arranged along the four sides S1, S2, S3, and S4 of the sensing device 40 at approximately equal intervals. In this way, no matter which side of the sensing device 40 is peeled off from the protective film, the strip metal SM can prevent the film layer underneath from being peeled off.

5 is a schematic top view of a sensing device 50 according to an embodiment of the present invention. The sensing device 50 has a sensing area AA, a pad area BA, and a peripheral area CA, and includes: a sensing element SD located in the sensing area AA; a pad PD located in the pad area BA; and a strip metal SM located in the peripheral area CA, and the extension direction of the strip metal SM and the pad PD are perpendicular to the extension direction of the adjacent side edges S1, S2, S3, S4.

The main difference between the sensing device 50 shown in FIG5 and the sensing device 40 shown in FIG4 is that the arrangement density of the metal strips SM of the sensing device 50 can be greater than the arrangement density of the pads PD, that is, the arrangement density of the metal strips SM can be denser than the arrangement density of the pads PD to prevent the film layer from peeling off more finely. In this way, in the extension direction of the metal strips SM and the pads PD, the arrangement of the metal strips SM can be misaligned with the pads PD, in other words, the arrangement of the metal strips SM can be staggered with the arrangement of the pads PD, and the pitch of the pads PD (spacing G4 plus width Wp) can be greater than the pitch of the metal strips SM (spacing G5 plus width Ws).

In summary, the sensing device of the present invention can prevent film layer peeling by disposing strip metal in the peripheral area, thereby improving the production yield and reliability of the sensing device.

Although the present invention has been disclosed as above by the embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.

10, 20, 30, 40, 50: sensing device A-A’, B-B’: section line A1, A2, A3, A4, B1, B2: side AA: sensing area AF: conductive glue BA: pad area BE: bottom electrode BF: barrier layer BP: conductive bump BS: base plate CA: peripheral area CF: chip bonding assembly CH: semiconductor layer CM: common electrode CM’: electrode D1, D2: minimum distance DE: drain G1, G2, G3, G4, G5: spacing GE: gate I1, I2, I3, I4: insulation layer Ls: length M2: conductive layer O1, O2, O3: opening PD: pad PN: photoelectric conversion layer Pw: part S1, S2, S3, S4: side SB: substrate SD: sensing element SE: source SM, SM1, SM2: strip metal SR: insulation layer SW: switch element TE: top electrode Wp, Ws: width WR: metal line Y: direction

FIG. 1A is a schematic diagram of a sensing device 10 according to an embodiment of the present invention from above. FIG. 1B is a schematic diagram of a cross section taken along the section line A-A' of FIG. 1A. FIG. 1C is a schematic diagram of a cross section taken along the section line B-B' of FIG. 1A. FIG. 2 is a schematic diagram of a partial cross section of a sensing device 20 according to an embodiment of the present invention. FIG. 3 is a schematic diagram of a sensing device 30 according to an embodiment of the present invention from above. FIG. 4 is a schematic diagram of a sensing device 40 according to an embodiment of the present invention from above. FIG. 5 is a schematic diagram of a sensing device 50 according to an embodiment of the present invention from above.

10:Sensor device

A-A’, B-B’: section line

A1,A2,B1,B2: Side

AA: Sensing area

BA: pad area

CA: Peripheral area

D1,D2: distance

G1,G2,G3: Spacing

Ls: length

PD: pad

S1,S2: Side

SD: Sensing element

SM: Strip metal

Wp, Ws: width

Claims (17)

A sensing device has a sensing area, a pad area and a peripheral area, wherein the pad area is located between the sensing area and the peripheral area, and comprises: a sensing element located in the sensing area; a pad located in the pad area and electrically connected to the sensing element; a strip metal located in the peripheral area, wherein the extension direction of the strip metal is parallel to the extension direction of the pad, wherein the strip metal is electrically separated from the sensing element, and the pitch of the strip metal is less than or equal to the pitch of the pad; and a chip bonding assembly disposed above the pad area and the peripheral area, and comprising: a bottom plate; and a metal wire disposed on the bottom plate and located between the bottom plate and the pad, wherein the metal wire is electrically connected to the pad, and the metal wire is electrically separated from the strip metal. A sensing device as described in claim 1, wherein the length of the metal strip is greater than its width. A sensing device as described in claim 1, wherein the metal strip is physically separated from the pad. A sensing device as described in claim 3, wherein the metal strip is aligned with the pad. A sensing device as described in claim 3, wherein the metal strip is offset from the pad. A sensing device as described in claim 1, wherein the pitch of the metal strip is smaller than the pitch of the pad. A sensing device as described in claim 1, wherein the width of the metal strip is smaller than the spacing between the pads. A sensing device as described in claim 1, wherein the arrangement density of the metal strips is greater than or equal to the arrangement density of the pads. A sensing device as described in claim 1, wherein the metal strip has a single-layer or double-layer structure. A sensing device as described in claim 1, wherein the extension direction of the strip metal is perpendicular to the side of the sensing device. A sensing device as described in claim 1, wherein the width of the metal strip is 1μm to 50μm. A sensing device as described in claim 1, wherein the minimum distance between the strip metal and the side of the sensing device is 50μm to 500μm. A sensing device as described in claim 1, wherein the pad area surrounds a portion of the sensing area. A sensing device as described in claim 13, wherein the peripheral area surrounds the pad area and the sensing area. The sensing device as described in claim 1, wherein the sensing element includes an upper electrode, a lower electrode, and a photoelectric conversion layer located between the upper electrode and the lower electrode, and the strip metal and the lower electrode belong to the same film layer. The sensing device as described in claim 1 further includes a common electrode electrically connected to the sensing element, and the common electrode and the strip metal belong to the same film layer. The sensing device as described in claim 1 further includes a switch element electrically connected to the sensing element, and the source of the switch element and the strip metal belong to the same film layer.

Images