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TWI866084B - Apparatus and method for polishing silicon wafer edge - Google Patents

Apparatus and method for polishing silicon wafer edge Download PDF

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TWI866084B
TWI866084B TW112106089A TW112106089A TWI866084B TW I866084 B TWI866084 B TW I866084B TW 112106089 A TW112106089 A TW 112106089A TW 112106089 A TW112106089 A TW 112106089A TW I866084 B TWI866084 B TW I866084B
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silicon wafer
edge
polishing
controller
desired position
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TW202330167A (en
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聶陽
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大陸商西安奕斯偉材料科技股份有限公司
大陸商西安奕斯偉矽片技術有限公司
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Abstract

本發明實施例公開了用於矽片邊緣拋光的設備及方法,該設備包括:用於傳送矽片的機械手;控制器,該控制器用於根據標準位置控制該機械手將該矽片傳送至與該矽片的目標形貌相對應的期望位置處,以使該矽片在該期望位置處被執行邊緣拋光。The embodiment of the present invention discloses an apparatus and method for edge polishing of a silicon wafer, the apparatus comprising: a robot for conveying a silicon wafer; a controller for controlling the robot to convey the silicon wafer to a desired position corresponding to a target morphology of the silicon wafer according to a standard position, so that the edge polishing of the silicon wafer is performed at the desired position.

Description

用於矽片邊緣拋光的設備及方法Apparatus and method for polishing silicon wafer edge

本發明實施例屬於半導體加工技術領域,尤其是關於用於矽片邊緣拋光的設備及方法。The present invention relates to the field of semiconductor processing technology, and more particularly to an apparatus and method for polishing the edge of a silicon wafer.

半導體矽晶圓片是製造超大型積體電路的主要襯底材料,隨著半導體產業的飛速發展,對襯底材料的精度要求也越來越高,特別是對矽片的外表面狀態越來越嚴格。一般在襯底加工時需要對矽片的外圓表面進行拋光處理,從而確保在磊晶製程中矽片邊緣處不產生滑移線或磊晶層錯等缺陷,進而提高磊晶片或器件成品率。Semiconductor silicon wafers are the main substrate material for manufacturing ultra-large integrated circuits. With the rapid development of the semiconductor industry, the precision requirements for substrate materials are becoming higher and higher, especially the outer surface state of silicon wafers is becoming more and more stringent. Generally, the outer surface of the silicon wafer needs to be polished during substrate processing to ensure that no slip lines or epitaxial layer errors are generated at the edge of the silicon wafer during the epitaxial process, thereby improving the yield of epitaxial wafers or devices.

隨著精度要求的提高,一些原本未曾關注的邊緣拋光問題逐漸被發現,並成為影響產品品質和成品率的主要因素,如何保證矽片邊緣形貌正是這類問題的一個典型代表。With the improvement of precision requirements, some edge polishing problems that were not paid attention to before have gradually been discovered and become the main factors affecting product quality and yield. How to ensure the edge morphology of silicon wafers is a typical example of such problems.

矽片在被執行倒角流程之後,會影響矽片的邊緣形貌的流程至少包括邊緣拋光流程,因此為了滿足矽片產品出貨時邊緣形貌的要求,需要保持被執行邊緣拋光後的矽片的倒角部分形貌。矽片的邊緣拋光流程包括V型缺口拋光和圓形邊緣拋光,其中,這裡的圓形邊緣拋光是指標對矽片的邊緣輪廓除V型缺口之外部分的拋光。當執行圓形邊緣拋光時,待拋光矽片相對於拋光頭的定位將決定拋光後矽片的形貌尺寸,因此,如何使待拋光矽片精准定位,是本領域亟需解決的技術問題。After the silicon wafer is chamfered, the process that affects the edge morphology of the silicon wafer includes at least the edge polishing process. Therefore, in order to meet the edge morphology requirements when the silicon wafer product is shipped, it is necessary to maintain the chamfered part of the silicon wafer after edge polishing. The edge polishing process of the silicon wafer includes V-notch polishing and round edge polishing. The round edge polishing here refers to the polishing of the edge contour of the silicon wafer except the V-notch. When performing circular edge polishing, the positioning of the silicon wafer to be polished relative to the polishing head will determine the topography and size of the silicon wafer after polishing. Therefore, how to accurately position the silicon wafer to be polished is a technical problem that needs to be solved urgently in this field.

有鑑於此,本發明實施例期望提供用於矽片邊緣拋光的設備及方法;能夠使待拋光的矽片定位在與該矽片的目標形貌相對應的期望位置處,實現了矽片的精准定位,以滿足對拋光後產品的形貌的要求。In view of this, the embodiments of the present invention are intended to provide an apparatus and method for polishing the edge of a silicon wafer, which can position the silicon wafer to be polished at a desired position corresponding to the target morphology of the silicon wafer, thereby achieving precise positioning of the silicon wafer to meet the requirements for the morphology of the product after polishing.

本發明實施例的技術方案是這樣實現的: 第一方面,本發明實施例提供了一種用於矽片邊緣拋光的設備,該設備包括: 用於傳送矽片的機械手; 控制器,該控制器用於根據標準位置控制該機械手將該矽片傳送至與該矽片的目標形貌相對應的期望位置處,以使該矽片在該期望位置處被執行邊緣拋光。 The technical solution of the embodiment of the present invention is implemented as follows: In the first aspect, the embodiment of the present invention provides a device for polishing the edge of a silicon wafer, the device comprising: A manipulator for conveying a silicon wafer; A controller, the controller being used to control the manipulator to convey the silicon wafer to a desired position corresponding to the target morphology of the silicon wafer according to a standard position, so that the edge of the silicon wafer is polished at the desired position.

第二方面,本發明實施例提供了一種用於矽片邊緣拋光的方法,該方法包括: 將矽片固定在機械手上; 根據標準位置控制該機械手將該矽片傳送至與該矽片的目標形貌相對應的期望位置處,以使該矽片在該期望位置處被執行邊緣拋光。 In a second aspect, an embodiment of the present invention provides a method for edge polishing of a silicon wafer, the method comprising: Fixing a silicon wafer on a robot; Controlling the robot to transfer the silicon wafer to a desired position corresponding to a target morphology of the silicon wafer according to a standard position, so that the edge polishing of the silicon wafer is performed at the desired position.

本發明實施例提供了用於矽片邊緣拋光的設備及方法;該設備包括用於傳送矽片的機械手和控制器,通過控制器控制機械手運動,能夠將矽片放置在與該矽片的目標形貌相對應的期望位置處,由此能夠使拋光後的矽片滿足不同的形貌要求,同時也避免了因手動調整機械手而造成矽片破損的情況發生。The embodiment of the present invention provides an apparatus and method for polishing the edge of a silicon wafer; the apparatus includes a robot arm and a controller for conveying a silicon wafer. The controller controls the movement of the robot arm to place the silicon wafer at a desired position corresponding to the target morphology of the silicon wafer, thereby enabling the polished silicon wafer to meet different morphology requirements and avoiding the occurrence of silicon wafer damage caused by manual adjustment of the robot arm.

下面將結合本發明實施例中的附圖,對本發明實施例中的技術方案進行清楚、完整地描述。The technical scheme in the embodiment of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the present invention.

參見圖1,其示出了常規技術方案中矽片W的邊緣拋光設備1。由圖1可以看出,邊緣拋光設備1主要包括:真空吸盤10、圓邊拋光鼓20、多個拋光頭30以及供液管路40;其中,真空吸盤10主要用於吸附固定待邊緣拋光的矽片W;圓邊拋光鼓20主要用於與真空吸盤10相配合,以完成對矽片W邊緣的拋光。具體來說,在矽片W的邊緣拋光過程中,矽片W被真空吸盤10吸附固定住,並且真空吸盤10向靠近圓邊拋光鼓20的方向移動,使得矽片W的邊緣與拋光頭30能夠相抵接。在矽片W的邊緣拋光過程中,拋光液經設置在圓邊拋光鼓20中心位置的供液管路40直接滴落在矽片W上表面的中央位置,同時,圓邊拋光鼓20繞中心軸線X轉動,且真空吸盤10帶動矽片W也同樣地繞中心軸線X轉動,使得矽片W上表面的拋光液在離心力的作用下流動至矽片W的邊緣,並流動至矽片W和拋光頭30之間,在這種情況下,圓邊拋光鼓20的高速旋轉也會對矽片W施加壓力並與矽片W維持相對轉動,從而實現了對矽片W邊緣的拋光。Refer to FIG1 , which shows an edge polishing device 1 for a silicon wafer W in a conventional technical solution. As can be seen from FIG1 , the edge polishing device 1 mainly includes: a vacuum suction cup 10, a round edge polishing drum 20, a plurality of polishing heads 30, and a liquid supply pipeline 40; wherein, the vacuum suction cup 10 is mainly used to absorb and fix the silicon wafer W to be edge polished; the round edge polishing drum 20 is mainly used to cooperate with the vacuum suction cup 10 to complete the polishing of the edge of the silicon wafer W. Specifically, during the edge polishing process of the silicon wafer W, the silicon wafer W is fixed by the vacuum suction cup 10, and the vacuum suction cup 10 moves toward the direction close to the round-edge polishing drum 20, so that the edge of the silicon wafer W can abut against the polishing head 30. During the edge polishing process of the silicon wafer W, the polishing liquid is directly dripped onto the center of the upper surface of the silicon wafer W through the liquid supply pipe 40 arranged at the center position of the round-edge polishing drum 20. At the same time, the round-edge polishing drum 20 rotates around the center axis X, and the vacuum suction cup 10 drives the silicon wafer W to rotate around the center axis X as well, so that the polishing liquid on the upper surface of the silicon wafer W flows to the edge of the silicon wafer W under the action of centrifugal force, and flows to between the silicon wafer W and the polishing head 30. In this case, the high-speed rotation of the round-edge polishing drum 20 will also apply pressure to the silicon wafer W and maintain relative rotation with the silicon wafer W, thereby achieving polishing of the edge of the silicon wafer W.

不同的應用場合對矽片形貌的要求不同。圖2示出了常規技術方案中邊緣拋光設備1的拋光頭30和矽片W,其中,拋光頭30可以分為三組,分別用於對矽片W的上邊緣、下邊緣和周向邊緣進行拋光。在矽片製造過程中,可以通過根據目標邊緣形貌設定拋光上邊緣和下邊緣的拋光頭的傾斜角度,以獲得滿足要求的矽片。Different applications have different requirements for the morphology of silicon wafers. FIG2 shows a polishing head 30 and a silicon wafer W of an edge polishing device 1 in a conventional technical solution, wherein the polishing head 30 can be divided into three groups, which are respectively used to polish the upper edge, the lower edge and the circumferential edge of the silicon wafer W. In the silicon wafer manufacturing process, the tilt angle of the polishing head for polishing the upper edge and the lower edge can be set according to the target edge morphology to obtain a silicon wafer that meets the requirements.

為了達到邊緣形貌要求,除了設定拋光頭的角度,還要注意矽片相對於拋光頭的定位。在圖2中,分別用實線和虛線示出了矽片W相對於拋光頭30的兩種定位,在圖3中,對應地示出了以圖2示出的兩種方式定位而被加工出的矽片。通過對比可以看出,即使拋光頭的設定角度相同,但矽片相對於拋光頭的定位不同,則獲得的矽片的形貌尺寸也不相同,例如,尺寸A1、B1、A2、B2均不同。In order to meet the edge morphology requirements, in addition to setting the angle of the polishing head, attention should also be paid to the positioning of the silicon wafer relative to the polishing head. In FIG2, two positionings of the silicon wafer W relative to the polishing head 30 are shown with solid lines and dashed lines, respectively. In FIG3, the silicon wafer processed by the two positioning methods shown in FIG2 is shown correspondingly. By comparison, it can be seen that even if the setting angle of the polishing head is the same, but the positioning of the silicon wafer relative to the polishing head is different, the morphological dimensions of the obtained silicon wafer are also different, for example, the dimensions A1, B1, A2, and B2 are all different.

目前,通常由機械手將矽片從其他工位運送至邊緣拋光工位。然而,一方面,機械手存在無法將矽片準確傳送到位的問題,另一方面,機械手的姿態和位置往往是固定的,如果需要生產具有不同邊緣形貌的矽片,則需要人為干預矽片的定位,而人為干預精度太低,可能致使矽片在拋光時被拋光頭擠碎。At present, silicon wafers are usually transported from other stations to the edge polishing station by robots. However, on the one hand, the robot cannot accurately transport the silicon wafer to the right position. On the other hand, the posture and position of the robot are often fixed. If silicon wafers with different edge morphologies need to be produced, manual intervention in the positioning of the silicon wafer is required. However, the accuracy of manual intervention is too low, which may cause the silicon wafer to be crushed by the polishing head during polishing.

基於以上問題,參見圖4,其示出了本發明實施例提供的一種用於矽片W邊緣拋光的設備2,該設備2包括: 用於傳送矽片W的機械手201; 控制器202,該控制器用於根據標準位置SD控制該機械手201將該矽片W傳送至與該矽片的目標形貌相對應的期望位置DE處,以使該矽片W在該期望位置DE處被執行邊緣拋光。 Based on the above problems, see FIG. 4 , which shows a device 2 for edge polishing of a silicon wafer W provided by an embodiment of the present invention, the device 2 comprising: A manipulator 201 for conveying a silicon wafer W; A controller 202, the controller being used to control the manipulator 201 to convey the silicon wafer W to a desired position DE corresponding to the target morphology of the silicon wafer according to a standard position SD, so that the silicon wafer W is edge polished at the desired position DE.

如圖4所示,本發明實施例提供的設備2包括機械手201和控制器202,待邊緣拋光的矽片W可以被固定在機械手201上。作為示範,參見圖4,機械手201可以設置有夾持部2011,用於通過夾持矽片W的周向邊緣來保持矽片,例如夾持部2011可以在沿矽片的直徑方向的兩個中心對稱位置處夾持矽片W的周向邊緣,當然,可以理解的是,機械手201也可以設置有負壓吸附裝置,以通過吸附矽片的主表面來保持矽片。機械手201可以承載矽片W並將其傳送至拋光台PL上的待拋光位置。機械手201的運動由控制器202控制,而不需要人工的參與。可以在拋光台PL上設置標準位置SD,例如可以將與矽片的常規形貌相對應的矽片位置設置為標準位置SD,當需要生產具有常規形貌的矽片時,控制器可以控制機械手將待邊緣拋光的矽片放置在標準位置SD,矽片將在該標準位置SD被執行邊緣拋光,由此可以獲得具有常規形貌的矽片,在此情況下,標準位置SD與期望位置DE重合;當需要製造具有特殊形貌的矽片時,待邊緣拋光的矽片則需要放置在偏離於標準位置SD的位置處,對此,控制器則根據標準位置SD控制該機械手201將該矽片W傳送至與該矽片的目標形貌相對應的期望位置DE處。As shown in FIG4 , the device 2 provided by the embodiment of the present invention includes a manipulator 201 and a controller 202, and a silicon wafer W to be edge-polished can be fixed on the manipulator 201. As an example, referring to FIG4 , the manipulator 201 can be provided with a clamping portion 2011 for holding the silicon wafer by clamping the circumferential edge of the silicon wafer W. For example, the clamping portion 2011 can clamp the circumferential edge of the silicon wafer W at two central symmetrical positions along the diameter direction of the silicon wafer. Of course, it can be understood that the manipulator 201 can also be provided with a negative pressure adsorption device to hold the silicon wafer by adsorbing the main surface of the silicon wafer. The manipulator 201 can carry the silicon wafer W and transfer it to the position to be polished on the polishing table PL. The movement of the robot 201 is controlled by the controller 202 without the need for human intervention. A standard position SD can be set on the polishing table PL. For example, the position of the silicon wafer corresponding to the normal morphology of the silicon wafer can be set as the standard position SD. When it is necessary to produce a silicon wafer with a normal morphology, the controller can control the robot to place the silicon wafer to be edge-polished at the standard position SD, and the silicon wafer will be edge-polished at the standard position SD, thereby obtaining a silicon wafer with a normal morphology. In this case, the standard position SD coincides with the desired position DE; when it is necessary to manufacture a silicon wafer with a special morphology, the silicon wafer to be edge-polished needs to be placed at a position deviated from the standard position SD. In this regard, the controller controls the robot 201 to transfer the silicon wafer W to the desired position DE corresponding to the target morphology of the silicon wafer according to the standard position SD.

本發明實施例提供了用於矽片邊緣拋光的設備2;該設備2包括用於傳送矽片的機械手201和控制器202,通過控制器控制機械手運動,能夠將矽片放置在與該矽片的目標形貌相對應的期望位置處,由此能夠使拋光後的矽片滿足不同的形貌要求,同時也避免了因手動調整機械手而造成矽片破損的情況發生。The embodiment of the present invention provides a device 2 for polishing the edge of a silicon wafer; the device 2 includes a robot 201 for conveying a silicon wafer and a controller 202. The controller controls the movement of the robot to place the silicon wafer at a desired position corresponding to the target morphology of the silicon wafer, thereby enabling the polished silicon wafer to meet different morphology requirements and avoiding the occurrence of silicon wafer damage caused by manual adjustment of the robot.

對於機械手201的具體操作,根據本發明的可選實施例,該控制器202將該矽片W傳送至該標準位置SD後,再根據該期望位置DE相對於該標準位置SD的偏移量將該矽片W傳送至該期望位置DE,也就是說,可以將矽片W的傳送分成兩步,第一步先將矽片W傳送至標準位置SD,第二步將矽片從標準位置SD傳送至期望位置DE。由於具有不同形貌的矽片之間的尺寸差異並不大,因此,期望位置DE與標準位置SD之間的距離也很小。如果分兩步傳送矽片,第一步移動矽片的距離相對較大,例如,如圖4所示,可以將矽片先從等待位置WP移動至標準位置SD,對於這一步,可以將機械手的移動速度設置成較快;第二部移動矽片的距離相對較小,實際上可以認為是對矽片位置的微調,這一步的移動速度可以較慢,以便能夠更精準地移動矽片至期望位置DE,由此可以在整體上提高傳送矽片的效率,並且提高矽片最終定位的精確度。Regarding the specific operation of the robot 201, according to an optional embodiment of the present invention, after the controller 202 transfers the silicon wafer W to the standard position SD, it transfers the silicon wafer W to the desired position DE according to the offset of the desired position DE relative to the standard position SD. In other words, the transfer of the silicon wafer W can be divided into two steps: the first step is to transfer the silicon wafer W to the standard position SD, and the second step is to transfer the silicon wafer from the standard position SD to the desired position DE. Since the size difference between silicon wafers with different morphologies is not large, the distance between the desired position DE and the standard position SD is also small. If the silicon wafer is transferred in two steps, the distance of moving the silicon wafer in the first step is relatively large. For example, as shown in Figure 4, the silicon wafer can be moved from the waiting position WP to the standard position SD. For this step, the movement speed of the robot can be set to be faster; the distance of moving the silicon wafer in the second step is relatively small. In fact, it can be considered as a fine-tuning of the position of the silicon wafer. The movement speed of this step can be slower so that the silicon wafer can be moved to the desired position DE more accurately. This can improve the efficiency of transferring the silicon wafer as a whole and improve the accuracy of the final positioning of the silicon wafer.

為了實現對機械手201的自動化控制,可選地,參見圖5,該設備2還包括:配置成與該控制器通信的處理器203,該處理器203用於獲取該期望位置DE相對於該標準位置SD的該偏移量並發送至該控制器202,由此,無需手動輸入機械手的移動量,只需要將目標形貌和計算模型輸入處理器,則可以由處理器將目標形貌轉換成機械手的移動量,並發送至控制器以控制機械手移動相應的量。In order to realize automatic control of the manipulator 201, optionally, referring to FIG5 , the device 2 further includes: a processor 203 configured to communicate with the controller, the processor 203 is used to obtain the offset of the desired position DE relative to the standard position SD and send it to the controller 202, thereby, there is no need to manually input the movement amount of the manipulator, only the target morphology and the calculation model need to be input into the processor, and the processor can convert the target morphology into the movement amount of the manipulator and send it to the controller to control the manipulator to move the corresponding amount.

在實際操作中,為了能夠更精準地傳送矽片,可以將機械手設置成僅在單一直線方向上移動,作為示範,如圖4所示,所示設備2還包括導引桿204,該機械手201和該控制器202設置成僅能夠沿導引桿204移動,就圖4而言,只能沿水平方向移動,而不能沿其他方向移動,這樣,可以預先將導引桿設置在適當的位置,使得僅需要調整機械手沿導引桿204的移動距離就可以將矽片傳送至期望位置DE。在這種情況下,作為一種具體實現形式,當該控制器202控制該機械手201朝向拋光頭(圖4中未示出)移動時,該偏移量為正值;當該控制器202控制該機械手201遠離該拋光頭移動時,該偏移量為負值。In actual operation, in order to be able to transport the silicon wafer more accurately, the robot can be set to move only in a single straight line direction. As a demonstration, as shown in Figure 4, the device 2 shown also includes a guide rod 204. The robot 201 and the controller 202 are set to move only along the guide rod 204. As far as Figure 4 is concerned, they can only move in the horizontal direction and cannot move in other directions. In this way, the guide rod can be set in an appropriate position in advance, so that the silicon wafer can be transported to the desired position DE by only adjusting the moving distance of the robot along the guide rod 204. In this case, as a specific implementation form, when the controller 202 controls the robot 201 to move toward the polishing head (not shown in FIG. 4 ), the offset is a positive value; when the controller 202 controls the robot 201 to move away from the polishing head, the offset is a negative value.

除了控制機械手按照設定值進行移動之外,也可以採用其他方式控制機械手的移動。根據本發明的可選實施例,參見圖6,該設備2還包括與該控制器202通信的感測器205,該感測器205配置成當該矽片W被傳送至該標準位置SD時向該控制器發送信號,由此可以根據感測器205的檢測結果確定矽片是否到達標準位置SD,進一步提高了對矽片定位的精度。In addition to controlling the manipulator to move according to the set value, other methods can also be used to control the movement of the manipulator. According to an optional embodiment of the present invention, see Figure 6, the device 2 further includes a sensor 205 that communicates with the controller 202, and the sensor 205 is configured to send a signal to the controller when the silicon wafer W is transferred to the standard position SD, thereby determining whether the silicon wafer reaches the standard position SD based on the detection result of the sensor 205, further improving the accuracy of positioning the silicon wafer.

關於感測器的具體實現形式,可選地,該感測器205為分別設置在該機械手201和標準位置SD處的成對的感測器。參見圖6,在機械手上設置有第一感測器2051和第二感測器2052,並且在標準位置SD的對應位置上設置有第三感測器2053和第四感測器2054,當機械手將矽片傳送至標準位置SD時,第二感測器2052和第四感測器2054可以分別接收到第一感測器2051和第三感測器2053發射的信號,並同時向控制器發送信號,控制器則根據信號控制機械手停止移動以將矽片放置在標準位置SD處。Regarding the specific implementation form of the sensor, optionally, the sensor 205 is a pair of sensors respectively arranged at the manipulator 201 and the standard position SD. Referring to FIG6 , a first sensor 2051 and a second sensor 2052 are arranged on the manipulator, and a third sensor 2053 and a fourth sensor 2054 are arranged at the corresponding position of the standard position SD. When the manipulator transfers the silicon wafer to the standard position SD, the second sensor 2052 and the fourth sensor 2054 can receive the signals emitted by the first sensor 2051 and the third sensor 2053 respectively, and send signals to the controller at the same time. The controller controls the manipulator to stop moving according to the signals to place the silicon wafer at the standard position SD.

參見圖7,本發明實施例還提供了一種用於矽片邊緣拋光的方法,該方法包括: S101、將矽片固定在機械手上; S102、根據標準位置控制該機械手將該矽片傳送至與該矽片的目標形貌相對應的期望位置處,以使該矽片在該期望位置處被執行邊緣拋光。 Referring to FIG. 7 , the embodiment of the present invention also provides a method for edge polishing of a silicon wafer, the method comprising: S101, fixing the silicon wafer on a robot; S102, controlling the robot to transfer the silicon wafer to a desired position corresponding to the target morphology of the silicon wafer according to a standard position, so that the edge of the silicon wafer is polished at the desired position.

根據本發明的可選實施例,該根據標準位置控制該機械手將該矽片傳送至與該矽片的目標形貌相對應的期望位置處包括:將該矽片W傳送至該標準位置SD後,再根據該期望位置DE相對於該標準位置SD的偏移量將該矽片W傳送至該期望位置DE。According to an optional embodiment of the present invention, controlling the robot to transfer the silicon wafer to a desired position corresponding to the target morphology of the silicon wafer according to the standard position includes: after transferring the silicon wafer W to the standard position SD, transferring the silicon wafer W to the desired position DE according to the offset of the desired position DE relative to the standard position SD.

根據本發明的可選實施例,該方法還包括獲取該期望位置DE相對於該標準位置SD的該偏移量。According to an optional embodiment of the present invention, the method further includes obtaining the offset of the desired position DE relative to the standard position SD.

需要說明的是:本發明實施例所記載的技術方案之間,在不衝突的情況下,可以任意組合。It should be noted that the technical solutions described in the embodiments of the present invention can be combined arbitrarily without conflict.

以上所述,僅為本發明的具體實施方式,但本發明的保護範圍並不局限於此,任何熟悉本技術領域的通常知識者在本發明揭露的技術範圍內,可輕易想到變化或替換,都應涵蓋在本發明的保護範圍之內。因此,本發明的保護範圍應以申請專利範圍的保護範圍為準。The above is only a specific implementation of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person of ordinary skill in the art within the technical scope disclosed by the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the patent application.

S101~S102:步驟 10:真空吸盤 20:圓邊拋光鼓 30:拋光頭 40:供液管路 1、2:設備 201:機械手 2011:夾持部 202:控制器 203:處理器 204:導引桿 205:感測器 2051:第一感測器 2052:第二感測器 2053:第三感測器 2054:第四感測器 DE:期望位置 PL:拋光台 SD:標準位置 W:矽片 WP:等待位置 X:中心軸線 S101~S102: Steps 10: Vacuum suction cup 20: Round edge polishing drum 30: Polishing head 40: Liquid supply pipeline 1, 2: Equipment 201: Robot 2011: Clamping part 202: Controller 203: Processor 204: Guide rod 205: Sensor 2051: First sensor 2052: Second sensor 2053: Third sensor 2054: Fourth sensor DE: Expected position PL: Polishing table SD: Standard position W: Silicon wafer WP: Waiting position X: Center axis

圖1為本發明實施例提供的常規技術中使用的矽片邊緣拋光設備; 圖2為本發明實施例提供的常規技術中使用的另一矽片邊緣拋光設備的一部分; 圖3為經邊緣拋光後的矽片的形貌的示意圖; 圖4為本發明實施例提供的用於矽片邊緣拋光的設備的示意圖; 圖5為本發明另一實施例提供的用於矽片邊緣拋光的設備的示意圖; 圖6為本發明又一實施例提供的用於矽片邊緣拋光的設備的示意圖; 圖7為本發明實施例提供的用於矽片邊緣拋光的方法的流程圖。 Figure 1 is a silicon wafer edge polishing device used in the conventional technology provided by an embodiment of the present invention; Figure 2 is a part of another silicon wafer edge polishing device used in the conventional technology provided by an embodiment of the present invention; Figure 3 is a schematic diagram of the morphology of the silicon wafer after edge polishing; Figure 4 is a schematic diagram of a device for silicon wafer edge polishing provided by an embodiment of the present invention; Figure 5 is a schematic diagram of a device for silicon wafer edge polishing provided by another embodiment of the present invention; Figure 6 is a schematic diagram of a device for silicon wafer edge polishing provided by another embodiment of the present invention; Figure 7 is a flow chart of a method for silicon wafer edge polishing provided by an embodiment of the present invention.

2:設備 2: Equipment

201:機械手 201: Robotic Arm

2011:夾持部 2011: Clamping Department

202:控制器 202: Controller

204:導引桿 204:Guide rod

DE:期望位置 DE: Desired position

PL:拋光台 PL: Polishing table

SD:標準位置 SD: Standard position

W:矽片 W: Silicon wafer

WP:等待位置 WP: Waiting position

Claims (9)

一種用於矽片邊緣拋光的設備,該設備包括:用於傳送矽片的機械手;控制器,該控制器用於根據標準位置控制該機械手將該矽片傳送至與該矽片的目標形貌相對應的期望位置處,以使該矽片在該期望位置處被執行邊緣拋光;其中,該標準位置為該矽片的常規形貌對應的位置。 A device for polishing the edge of a silicon wafer, the device comprising: a manipulator for conveying a silicon wafer; a controller, the controller being used to control the manipulator to convey the silicon wafer to a desired position corresponding to a target morphology of the silicon wafer according to a standard position, so that the edge of the silicon wafer is polished at the desired position; wherein the standard position is a position corresponding to the conventional morphology of the silicon wafer. 如請求項1所述的用於矽片邊緣拋光的設備,其中,該控制器將該矽片傳送至該標準位置後,再根據該期望位置相對於該標準位置的偏移量將該矽片傳送至該期望位置。 The device for polishing the edge of a silicon wafer as described in claim 1, wherein the controller transfers the silicon wafer to the standard position and then transfers the silicon wafer to the desired position according to the offset of the desired position relative to the standard position. 如請求項2所述的用於矽片邊緣拋光的設備,其中,該設備還包括:配置與該控制器通信的處理器,該處理器用於獲取該期望位置相對於該標準位置的該偏移量並發送至該控制器。 The device for polishing the edge of a silicon wafer as described in claim 2, wherein the device further comprises: a processor configured to communicate with the controller, the processor being used to obtain the offset of the desired position relative to the standard position and send it to the controller. 如請求項2所述的用於矽片邊緣拋光的設備,其中,當該控制器控制該機械手朝向拋光頭移動時,該偏移量為正值;當該控制器控制該機械手遠離該拋光頭移動時,該偏移量為負值。 The device for polishing the edge of a silicon wafer as described in claim 2, wherein when the controller controls the robot to move toward the polishing head, the offset is a positive value; when the controller controls the robot to move away from the polishing head, the offset is a negative value. 如請求項2至4中任一項所述的用於矽片邊緣拋光的設備,其中,該設備還包括與該控制器通信的感測器,該感測器配置成當該矽片被傳送至該標準位置時向該控制器發送信號。 An apparatus for polishing the edge of a silicon wafer as described in any one of claims 2 to 4, wherein the apparatus further comprises a sensor communicating with the controller, the sensor being configured to send a signal to the controller when the silicon wafer is transferred to the standard position. 如請求項5所述的用於矽片邊緣拋光的設備,其中,該感測器為分別設置在該機械手和該標準位置處的成對的感測器。 The device for polishing the edge of a silicon wafer as described in claim 5, wherein the sensor is a pair of sensors respectively arranged at the robot arm and the standard position. 一種用於矽片邊緣拋光的方法,該方法包括: 將矽片固定在機械手上;根據標準位置控制該機械手將該矽片傳送至與該矽片的目標形貌相對應的期望位置處,以使該矽片在該期望位置處被執行邊緣拋光;其中,該標準位置為該矽片的常規形貌對應的位置。 A method for polishing the edge of a silicon wafer, the method comprising: Fix a silicon wafer on a robot; control the robot to transfer the silicon wafer to a desired position corresponding to a target morphology of the silicon wafer according to a standard position, so that the edge of the silicon wafer is polished at the desired position; wherein the standard position is a position corresponding to the conventional morphology of the silicon wafer. 如請求項7所述的用於矽片邊緣拋光的方法,其中,該根據標準位置控制該機械手將該矽片傳送至與該矽片的目標形貌相對應的期望位置處包括:將該矽片傳送至該標準位置後,再根據該期望位置相對於該標準位置的偏移量將該矽片傳送至該期望位置。 The method for polishing the edge of a silicon wafer as described in claim 7, wherein the controlling the robot to transfer the silicon wafer to a desired position corresponding to the target morphology of the silicon wafer according to the standard position comprises: after transferring the silicon wafer to the standard position, transferring the silicon wafer to the desired position according to the offset of the desired position relative to the standard position. 如請求項8所述的用於矽片邊緣拋光的方法,其中,該方法還包括獲取該期望位置相對於該標準位置的該偏移量。A method for polishing a silicon wafer edge as described in claim 8, wherein the method further includes obtaining the offset of the desired position relative to the standard position.
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