TWI865945B - Photosensitive resin composition, method for manufacturing hardened relief pattern, and semiconductor device - Google Patents

Abstract

The present invention provides a photosensitive resin composition capable of obtaining a resin layer with high adhesion without generating voids at the interface between the Cu layer and the cured photosensitive resin layer after a high temperature storage test, a method for forming a cured relief pattern using the photosensitive resin composition, and a semiconductor device having the cured relief pattern. The photosensitive resin composition of the present invention can form a cured film in which voids are suppressed at the interface between the Cu layer and the cured photosensitive resin layer after a high temperature storage test by mixing a cyclic compound having a carbonyl group in a photosensitive resin composition having a specific structure.

Description

Photosensitive resin composition, method for manufacturing hardened relief pattern, and semiconductor device

The present invention relates to a photosensitive resin composition for forming a relief pattern such as an insulating material for electronic parts and a passivation film, a buffer coating film, an interlayer insulating film, etc. in a semiconductor device, a method for forming a hardened relief pattern using the same, and a semiconductor device.

Previously, insulating materials for electronic parts, passivation films for semiconductor devices, surface protection films, interlayer insulating films, etc. used polyimide resins, polybenzoxazole resins, phenolic resins, etc., which have excellent heat resistance, electrical properties, and mechanical properties. Among the polyimide resins, a photosensitive polyimide precursor composition is provided, which can easily form a heat-resistant embossed pattern film by coating, exposing, developing, and curing the composition through thermal imidization treatment. This photosensitive polyimide precursor composition has the characteristic of being able to significantly reduce the steps compared to the previous non-photosensitive polyimide material. In addition, semiconductor devices (hereinafter also referred to as "components") are mounted on printed circuit boards by various methods depending on the purpose. In the past, components were generally manufactured by wire bonding, which uses thin wires to connect the external terminals (pads) of the component to the lead frame. However, as components are becoming faster and the operating frequency has reached GHz, the difference in the wiring length of each terminal during installation may even affect the operation of the component. Therefore, in the installation of components for high-end applications, the length of the mounting wiring must be accurately controlled, and it is difficult to meet this requirement if wire bonding is used. Therefore, a flip-chip mounting method has been proposed, that is, a redistribution layer is formed on the surface of a semiconductor chip, and bumps (electrodes) are formed thereon, and then the chip is turned over (flipped) and directly mounted on a printed circuit board (for example, refer to patent document 1). The demand for flip-chip mounting is rapidly increasing because it can precisely control the wiring distance, and is used in high-end components that process high-speed signals, or in mobile phones, etc., because the mounting size is relatively small. When using materials such as polyimide, polybenzoxazole, and phenolic resin in flip-chip mounting, after the pattern of the resin layer is formed, a metal wiring layer formation step is performed. The metal wiring layer is usually formed by roughening the surface of the resin layer by plasma etching, and then forming a metal layer of a coated seed layer with a thickness of less than 1 μm by sputtering, and then using the metal layer as an electrode and electroplating. At this time, Ti is generally used as the metal for the seed layer, and Cu is used as the metal for the redistribution layer formed by electrolytic plating. For this kind of metal redistribution layer, the adhesion between the redistribution metal layer and the resin layer is required to be higher after the reliability test. As examples of reliability tests performed here, there are: a high-temperature storage test in which the device is stored in the air at a high temperature of more than 125°C for more than 100 hours; a high-temperature operation test in which the device is assembled and a voltage is applied while confirming the operation in the state of being stored in the air at a temperature of about 125°C for more than 100 hours; a low-temperature state test of about -65 to -40°C in the air. Temperature cycle test with repeated high temperature state of about 125-150℃; high temperature and high humidity storage test in a water vapor environment with a temperature of more than 85℃ and a humidity of more than 85%; high temperature and high humidity bias test in which the same test is performed while assembling and wiring and applying voltage; reflow test in which the reflow oven is passed through 260℃ multiple times in air or nitrogen, etc. However, in the case of high temperature storage test in the above reliability test, there was a problem of voids at the interface where the Cu layer of the redistribution wiring and the resin layer contacted after the test. If voids are generated at the interface between the Cu layer and the resin layer, the adhesion between the two is reduced. [Prior technical literature] [Patent literature] [Patent literature 1] Japanese Patent Publication No. 2001-338947

[Problem to be solved by the invention] The present invention is obtained in view of such previous actual situation research, and its purpose is to provide a photosensitive resin composition that can obtain a resin layer with high adhesion without generating voids at the interface between the Cu layer and the cured photosensitive resin layer after a high temperature storage test, a method for forming a hardened relief pattern using the photosensitive resin composition, and a semiconductor device having the hardened relief pattern. [Technical means for solving the problem] The inventors of the present invention have found that by formulating a cyclic compound having a carbonyl group in a photosensitive resin composition, a photosensitive resin composition capable of forming a cured film having excellent discoloration suppression even on copper or copper alloys can be obtained, thereby completing the present invention. That is, the present invention is as follows. [1] A photosensitive resin composition comprising: (A) 100 parts by mass of at least one resin selected from the group consisting of polyamic acid, polyamic acid ester, polyamic acid salt, polyhydroxyamide, polyaminoamide, polyamide, polyamide imide, polyimide, polybenzoxazole, as well as phenolic varnish, polyhydroxystyrene and phenolic resin; (B) at least one compound selected from the group consisting of the following compounds: 0.01 to 10 parts by mass based on 100 parts by mass of the resin (A), wherein the compound is a cyclic compound having two or more carbonyl groups, wherein the carbonyl groups are directly bonded to the cyclic structure, and in the case of a monocyclic compound, more than 1/3 of the atoms forming the cyclic structure are N atoms, and in the case of a condensed cyclic compound, more than 1/3 of the atoms forming the cyclic structure having the carbonyl groups are N atoms; and (C) a photosensitizer: 1 to 50 parts by mass based on 100 parts by mass of the resin (A). [2] The photosensitive resin composition as described in [1], wherein the resin (A) is at least one selected from the group consisting of a polyimide precursor comprising the following general formula (1), a polyamide comprising the following general formula (4), a polyazole precursor comprising the following general formula (5), a polyimide comprising the following general formula (6), and a novolac, a polyhydroxystyrene, and a phenolic resin comprising the following general formula (7). The following general formula (1) is [Chemical 1] {wherein, _X1 is a tetravalent organic group, _Y1 is a divalent organic group, _n1 is an integer of 2 to 150, and _R1 and _R2 are independently a hydrogen atom, a saturated aliphatic group having 1 to 30 carbon atoms, an aromatic group, or the following general formula (2): [Chemical 2] (wherein R ₃ , R ₄ and R ₅ are independently a hydrogen atom or an organic group having 1 to 3 carbon atoms, and m ₁ is an integer of 2 to 10) a monovalent organic group represented by, or a saturated aliphatic group having 1 to 4 carbon atoms, or the following general formula (3): [Chemical 3] (wherein R ₆ , R ₇ and R ₈ are independently hydrogen atoms or organic groups having 1 to 3 carbon atoms, and m ₂ is an integer of 2 to 10) a monovalent ammonium ion represented by} a polyamide acid, polyamide ester or polyamide salt as a polyimide precursor, the following general formula (4) is a compound having [Chemical 4] {wherein, X ₂ is a trivalent organic group having 6 to 15 carbon atoms, Y ₂ is a divalent organic group having 6 to 35 carbon atoms and may be of the same structure or have plural structures, R ₉ is an organic group having at least one free radical polymerizable unsaturated bond group having 3 to 20 carbon atoms, and n ₂ is an integer of 1 to 1000} A polyamide having a structure represented by the general formula (5) [Chemical 5] {wherein, Y ₃ is a tetravalent organic group having carbon atoms, Y ₄ , X ₃ and X ₄ are independently divalent organic groups having 2 or more carbon atoms, n ₃ is an integer of 1 to 1000, n ₄ is an integer of 0 to 500, n ₃ /(n ₃ +n ₄ )>0.5, and the arrangement order of n ₃ dihydroxy diamide units containing X ₃ and Y ₃ and n ₄ diamide units containing X ₄ and Y ₄ is arbitrary} The polyhydroxyamide as a polyazole precursor having a structure represented by the following general formula (6) is [Chemical 6] {wherein, X ₅ is a 4- to 14-valent organic group, Y ₅ is a 2- to 12-valent organic group, R ₁₀ and R ₁₁ each independently represent an organic group having at least one group selected from a phenolic hydroxyl group, a sulfonic acid group or a thiol group, n ₅ is an integer of 3 to 200, and m ₃ and m ₄ represent integers of 0 to 10} A polyimide having a structure represented by the following general formula (7): [Chemical 7] {wherein, a is an integer of 1 to 3, b is an integer of 0 to 3, 1≦(a+b)≦4, _R12 represents a monovalent substituent selected from the group consisting of a monovalent organic group having 1 to 20 carbon atoms, a halogen atom, a nitro group and a cyano group, and when b is 2 or 3, a plurality of _R12 may be the same or different from each other, and X represents a divalent aliphatic group having 2 to 10 carbon atoms which may have an unsaturated bond, a divalent alicyclic group having 3 to 20 carbon atoms, and the following general formula (8): [Chemical 8] [3] A photosensitive resin composition as described in [1] or [2], wherein the photosensitive resin composition comprises a phenolic resin having a repeating unit represented by the general formula (7), wherein X in the general formula (7) is selected from the following general formula (9): [Chemical 9] {wherein, R ₁₃ , R ₁₄ , R ₁₅ and R ₁₆ are independently a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a monovalent aliphatic group having 1 to 10 carbon atoms in which a part or all of the hydrogen atoms are replaced by fluorine atoms, n ₆ is an integer of 0 to 4, and when n ₆ is an integer of 1 to 4, R ₁₇ is a halogen atom, a hydroxyl group, or a monovalent organic group having 1 to 12 carbon atoms, at least one R ₁₇ is a hydroxyl group, and when n ₆ is an integer of 2 to 4, a plurality of R _17s may be the same or different from each other}, and the following general formula (10): [Chemical 10] {wherein, R ₁₈ , R ₁₉ , R ₂₀ and R ₂₁ each independently represent a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a monovalent aliphatic group having 1 to 10 carbon atoms in which a part or all of the hydrogen atoms are replaced by fluorine atoms; W is a single bond, an aliphatic group having 1 to 10 carbon atoms which may be replaced by a fluorine atom, an alicyclic group having 3 to 20 carbon atoms which may be replaced by a fluorine atom, or the following general formula (8): [Chemical 11] (wherein p is an integer from 1 to 10) and the following formula (11): [4] A method for producing a hardened relief pattern, comprising: (1) forming a photosensitive resin layer on a substrate by coating a photosensitive resin composition as described in any one of [1] to [3] on the substrate; (2) exposing the photosensitive resin layer; (3) developing the exposed photosensitive resin layer to form a relief pattern; and (4) forming a hardened relief pattern by heating the relief pattern. [5] The method as described in [4], wherein the substrate is formed of copper or a copper alloy. [6] A semiconductor device comprising a hardened relief pattern obtained by the manufacturing method described in [4] or [5]. [Effect of the invention] According to the present invention, by combining a specific photosensitive resin with a specific compound, a photosensitive resin composition can be provided that can obtain a photosensitive resin with high adhesion without generating voids at the interface between the Cu layer and the polyimide layer after a high temperature storage test, a method for forming a hardened relief pattern using the photosensitive resin composition, and a semiconductor device having the hardened relief pattern.

The present invention is described in detail below. In the present specification, when a plurality of structures represented by the same symbol in a general formula exist in a molecule, they may be the same or different from each other. <Photosensitive resin composition> (Sample A) The present invention comprises the following components as essential components, namely, (A) 100 parts by mass of at least one resin selected from the group consisting of polyamic acid, polyamic acid ester and polyamic acid salt, polyhydroxyamide, polyaminoamide, polyamide, polyamide imide, polyimide, polybenzoxazole, as well as phenolic varnish, polyhydroxystyrene and phenolic resin, (B) 0.01 to 10 parts by mass of a cyclic compound having a carbonyl group, based on 100 parts by mass of the resin (A), and (C) 1 to 50 parts by mass of a photosensitive agent, based on 100 parts by mass of the resin (A). (A) Resin The (A) resin used in the present invention is described. The (A) resin of the present invention is a resin selected from the group consisting of polyamic acid, polyamic acid ester, polyamic acid salt, polyhydroxyamide, polyaminoamide, polyamide, polyamide imide, polyimide, polybenzoxazole, and novolac, polyhydroxystyrene and phenol resin as a main component. Here, the so-called main component means that the resin contains more than 60% by mass of the whole resin, preferably more than 80% by mass. In addition, other resins may be contained as needed. The weight average molecular weight of the resin is preferably 200 or more, more preferably 5,00 or more, in terms of heat resistance and mechanical properties after heat treatment, calculated based on polystyrene conversion by gel permeation chromatography. The upper limit is preferably 500,000 or less, and when a photosensitive resin composition is prepared, it is more preferably 20,000 or less in terms of solubility in a developer. In the present invention, in order to form a relief pattern, the (A) resin is a photosensitive resin. The photosensitive resin is used together with the following (C) photosensitive agent to form a photosensitive resin composition, and is a resin that causes a phenomenon of dissolution or non-dissolution in the subsequent development step. As the photosensitive resin, among polyamic acid, polyamic acid ester, polyamic acid salt, polyhydroxyamide, polyaminoamide, polyamide, polyamide imide, polyimide, polybenzoxazole, and phenolic resins including novolac and polyhydroxystyrene, polyamic acid, polyamic acid ester, polyamic acid salt, polyamide, polyhydroxyamide, polyimide and phenolic resin can be preferably used in terms of excellent heat resistance and mechanical properties of the resin after heat treatment. In addition, these photosensitive resins can be selected according to the desired use and prepared with the following (C) photosensitive agent to prepare any negative or positive photosensitive resin composition. [(A) Polyamic acid, polyamic acid ester, polyamic acid salt] In the photosensitive resin composition of the present invention, one example of the best (A) resin from the viewpoint of heat resistance and photosensitivity is the above-mentioned general formula (1): [Chemical 13] {Wherein, X ₁ is a tetravalent organic group, Y ₁ It is a divalent organic group, n ₁ is an integer between 2 and 150. ₁ and R ₂ Each of them is independently a hydrogen atom, a saturated aliphatic group having 1 to 30 carbon atoms, or the above general formula (2): [Chemical 14] (Where R ₃ , R ₄ and R ₅ Each of them is independently a hydrogen atom or an organic group with 1 to 3 carbon atoms, and m ₁ is an integer from 2 to 10) or a monovalent organic group represented by a saturated aliphatic group having 1 to 4 carbon atoms; or the following general formula (3): [Chemical 15] (Where R ₆ , R ₇ and R ₈ Each of them is independently a hydrogen atom or an organic group with 1 to 3 carbon atoms, and m ₂ is an integer of 2 to 10) represented by a monovalent ammonium ion} as a polyimide precursor represented by a polyamic acid, polyamic acid ester or polyamic acid salt. The polyimide precursor is converted into polyimide by applying heat (e.g., above 200°C) for cyclization. The polyimide precursor is suitable for use in a negative photosensitive resin composition. In the above general formula (1), X ₁ The tetravalent organic group represented by is preferably an organic group having 6 to 40 carbon atoms, and more preferably -COOR ₁ Base-COOR ₂ The -CONH- group and the -CONH- group are adjacent to each other and are aromatic groups or alicyclic aliphatic groups. ₁ The tetravalent organic group represented by is preferably an organic group having 6 to 40 carbon atoms and containing an aromatic ring, and more preferably the following formula (30): [Chemical 16] {wherein, R25 is a monovalent group selected from hydrogen atom, fluorine atom, C1-C10 alkyl group, C1-C10 fluorine-containing alkyl group, l is an integer selected from 0-2, m is an integer selected from 0-3, and n is an integer selected from 0-4}, but is not limited to the above. ₁ The structure of may be one or a combination of two or more. ₁ The group is particularly preferred in terms of having both heat resistance and photosensitivity. ₁ The divalent organic group represented by is preferably an aromatic group having 6 to 40 carbon atoms in terms of having both heat resistance and photosensitivity. For example, the following formula (31) can be cited: The structure represented by {wherein, R25 is a monovalent group selected from hydrogen atom, fluorine atom, C1-C10 alkyl group, C1-C10 fluorine-containing alkyl group, and n is an integer selected from 0 to 4} is not limited thereto. ₁ The structure of may be one or a combination of two or more. Y having the structure represented by the above formula (31) ₁ The group is particularly preferred in terms of having both heat resistance and photosensitivity. ₃ Preferably, it is a hydrogen atom or a methyl group, R ₄ and R ₅ From the viewpoint of photosensitivity, hydrogen atoms are preferred. ₁ From the viewpoint of photosensitivity, it is an integer of 2 or more and 10 or less, preferably an integer of 2 or more and 4 or less. When a polyimide precursor is used as the resin (A), as a method of imparting photosensitivity to the photosensitive resin composition, there can be exemplified an ester bond type and an ionic bond type. The former is a method of introducing a compound having a photopolymerizable group, i.e., an olefinic double bond, into the side chain of the polyimide precursor via an ester bond, and the latter is a method of imparting a photopolymerizable group by bonding the carboxyl group of the polyimide precursor to the amino group of a (meth) acrylic compound having an amino group via an ionic bond. The ester bond type polyimide precursor is obtained by firstly reacting the tetravalent organic group X ₁ The tetracarboxylic acid dianhydride is reacted with an unsaturated double bond alcohol having photopolymerizability and an arbitrary saturated aliphatic alcohol having 1 to 4 carbon atoms to prepare a partially esterified tetracarboxylic acid (hereinafter also referred to as an acid/ester), and then reacted with the above-mentioned divalent organic group Y ₁ (Preparation of acid/ester) In the present invention, a tetravalent organic group X is used as a precursor for preparing an ester-bond type polyimide. ₁ The tetracarboxylic dianhydride may be exemplified by the tetracarboxylic dianhydride represented by the general formula (30), for example, pyromellitic dianhydride, diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride, benzophenone-3,3',4,4'-tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic dianhydride, diphenylsulfone-3,3',4,4'-tetracarboxylic dianhydride, diphenylmethane-3,3',4,4'-tetracarboxylic dianhydride, Acid dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, 2,2-bis(3,4-phthalic anhydride)-1,1,1,3,3,3-hexafluoropropane, etc., preferably, pyromellitic dianhydride, diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride, benzophenone-3,3',4,4'-tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic dianhydride, but not limited to these. Moreover, these can be used alone, or two or more kinds can be mixed and used. In the present invention, the photopolymerizable unsaturated divalent alcohols suitable for preparing the ester bond type polyimide precursor include, for example, 2-acryloxyethanol, 1-acryloxy-3-propanol, 2-acrylamidoethanol, hydroxymethyl vinyl ketone, 2-hydroxyethyl vinyl ketone, 2-hydroxy-3-methoxypropyl acrylate, 2-hydroxy-3-butoxypropyl acrylate, 2-hydroxy-3-phenoxypropyl acrylate, 2-hydroxy-3-butoxypropyl acrylate, 2-hydroxy-3-tert-butoxypropyl acrylate ...tert-butoxypropyl acrylate, 2-hydroxy-3-methoxypropyl acrylate, 2-hydroxy-3-methoxypropyl acrylate, 2-hydroxy-3-butoxypropyl acrylate, 2-hydroxy-3-phenoxypropyl acrylate, 2-hydroxy-3-butoxypropyl acrylate, 2-hydroxy-3-tert-butoxypropyl acrylate, 2-hydroxy-3-tert-butoxypropyl acrylate, 2-hydroxy-3-methoxypropyl acrylate, 2-hydroxy-3-methoxypropyl acrylate, 2-hydroxy-3-methoxypropyl acrylate, 2-hydroxy-3-butoxypropyl acrylate, 2-hydroxy-3-tert-butoxypropyl acrylate, 2-hydroxy-3-tert-butoxypropyl acrylate, 2-hydroxy-3-tert-butoxypropyl acrylate, 2-hydroxy-3-tert-butoxypropyl acrylate, 2-hydroxy-3-tert-butoxypropyl acrylate, 2-hydroxy-3-tert-butoxypropyl acrylate, 2- 1-Methacryloyloxy-3-propanol, 2-methacrylamidoethanol, hydroxymethyl vinyl ketone, 2-hydroxyethyl vinyl ketone, 2-hydroxy-3-methoxypropyl methacrylate, 2-hydroxy-3-butoxypropyl methacrylate, 2-hydroxy-3-phenoxypropyl methacrylate, 2-hydroxy-3-butoxypropyl methacrylate, 2-hydroxy-3-tert-butoxypropyl methacrylate, 2-hydroxy-3-cyclohexyloxypropyl methacrylate, etc. A portion of the above alcohols may be mixed with a saturated aliphatic alcohol having 1 to 4 carbon atoms, such as methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol, etc. The appropriate tetracarboxylic dianhydride of the present invention and the alcohols are dissolved and mixed in the presence of an alkaline catalyst such as pyridine in a solvent as described below at a temperature of 20 to 50° C. and stirred for 4 to 10 hours to carry out an esterification reaction of the anhydride to obtain the desired acid/ester. (Preparation of polyimide precursor) The above acid/ester (typically a solution in the following solvent) is added with an appropriate dehydration condensation agent, such as dicyclocarbodiimide (e.g. dicyclohexylcarbodiimide), 1-ethoxycarbonyl-2-ethoxy-1,2-dihydroquinoline, 1,1-carbonyldioxy-di-1,2,3-benzotriazole, N,N'-disuccinimidyl carbonate, etc., under ice cooling to prepare a polyanhydride from the acid/ester. Then, a divalent organic group Y that is suitable for use in the present invention is added dropwise. ₁ The target polyimide precursor can be obtained by dissolving or dispersing the diamine in a solvent and subjecting the diamine to amide condensation polymerization. Alternatively, the acid part of the acid/ester is chlorinated with sulfinyl chloride and then reacted with a diamine compound in the presence of a base such as pyridine to obtain the target polyimide precursor. The divalent organic group Y that is suitable for use in the present invention is ₁ The diamines may be represented by the diamine having the structure represented by the general formula (31), for example, p-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-Bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, 4,4-bis(4-aminophenoxy)biphenyl, 4,4-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 9,10-bis(4-aminophenoxy) phenyl) anthracene, 2,2-bis(4-aminophenyl) propane, 2,2-bis(4-aminophenyl) hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl) propane, 2,2-bis[4-(4-aminophenoxy)phenyl) hexafluoropropane, 1,4-bis(3-aminopropyldimethylsilyl)benzene, o-toluidine sulfide, 9,9-bis(4-aminophenyl)fluorene, and a portion of the hydrogen atoms on the benzene ring of these are replaced by methyl, ethyl, hydroxymethyl, hydroxyethyl , halogen-substituted, such as 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 2,2'-dimethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 3,3'-dichloro-4,4'-diaminobiphenyl, 2,2'-dimethylbenzidine, 2,2'-bis(trifluoromethyl)-4 ,4'-diaminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, etc.; preferably, p-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 2,2'-dimethylbenzidine, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, etc., and mixtures thereof, but not limited thereto. In order to improve the adhesion between the resin layer formed on the substrate by coating the photosensitive resin composition of the present invention on the substrate and various substrates, when preparing the polyimide precursor, it can also be copolymerized with diaminosiloxanes such as 1,3-bis(3-aminopropyl)tetramethyldisiloxane and 1,3-bis(3-aminopropyl)tetraphenyldisiloxane. After the amide polycondensation reaction is completed, the water-absorbing byproduct of the dehydration condensation agent coexisting in the reaction solution is filtered and separated as needed, and then a poor solvent such as water, aliphatic lower alcohol, or a mixture thereof is added to the obtained polymer component to precipitate the polymer component, and then the polymer is repeatedly dissolved and reprecipitated to purify the polymer, and then vacuum dried to isolate the target polyimide precursor. In order to improve the degree of purification, the polymer solution can also be passed through a column filled with an anion and/or cation exchange resin swollen with a suitable organic solvent to remove ionic impurities. On the other hand, the ionic bond type polyimide precursor is typically obtained by reacting tetracarboxylic dianhydride with diamine. In this case, R in the general formula (1) is ₁ and R ₂ At least one of the above is a hydroxyl group. As the tetracarboxylic dianhydride, the anhydride of the tetracarboxylic acid having the structure of the above formula (30) is preferred, and as the diamine, the diamine having the structure of the above formula (31) is preferred. By adding the following (meth) acrylic compound having an amino group to the obtained polyamide precursor, a photopolymerizable group is given by utilizing the ionic bonding between the carboxyl group and the amino group. Preferred examples of the (meth)acrylic compound having an amino group include dimethylaminoethyl acrylate, dimethylaminoethyl methacrylate, diethylaminoethyl acrylate, diethylaminoethyl methacrylate, dimethylaminopropyl acrylate, dimethylaminopropyl methacrylate, diethylaminopropyl acrylate, diethylaminopropyl methacrylate, dimethylaminobutyl acrylate, dimethylaminobutyl methacrylate, diethylaminobutyl acrylate, diethylaminobutyl methacrylate, and dialkylaminoalkyl acrylates or dialkylaminoalkyl methacrylates. Among them, from the viewpoint of photosensitivity, preferred are dialkylaminoalkyl acrylates or dialkylaminoalkyl methacrylates in which the alkyl group on the amino group has 1 to 10 carbon atoms and the alkyl chain has 1 to 10 carbon atoms. The amount of the (meth)acrylic compound having an amino group is 1 to 20 parts by mass relative to 100 parts by mass of the (A) resin, and preferably 2 to 15 parts by mass from the viewpoint of photosensitivity. By adding 1 part by mass or more of the (meth)acrylic compound having an amino group as the (C) photosensitive agent relative to 100 parts by mass of the (A) resin, the photosensitivity is excellent, and by adding 20 parts by mass or less, the thick film curing property is excellent. The molecular weight of the ester bond type and ionic bond type polyimide precursor is preferably 8,000 to 150,000, and more preferably 9,000 to 50,000 when measured in the form of a weight average molecular weight in terms of polystyrene based on gel permeation chromatography. When the weight average molecular weight is 8,000 or more, the mechanical properties are good, and when it is 150,000 or less, the dispersibility in the developer is good, and the resolution performance of the embossed pattern is good. As developing solvents for gel permeation chromatography, tetrahydrofuran and N-methyl-2-pyrrolidone are recommended. In addition, the weight average molecular weight is obtained based on a calibration curve prepared using standard monodisperse polystyrene. As the standard monodisperse polystyrene, it is recommended to select from the organic solvent system standard sample STANDARD SM-105 manufactured by Showa Denko Co., Ltd. [(A) Polyamide] Another example of the preferred (A) resin in the photosensitive resin composition of the present invention has the following general formula (4): [Chemical 18] {Wherein, X ₂ is a trivalent organic group with 6 to 15 carbon atoms, Y ₂ is a divalent organic group having 6 to 35 carbon atoms and may have the same structure or multiple structures. ₉ is an organic group having at least one free radical polymerizable unsaturated bonding group having 3 to 20 carbon atoms, and n ₂ is an integer of 1 to 1000}. The polyamide is suitable for use in a negative photosensitive resin composition. In the above general formula (4), R ₉ The group represented by is preferably the following general formula (32) in terms of having both photosensitivity and chemical resistance: {In the formula, R ₃₂ is an organic group having at least one free radical polymerizable unsaturated bonding group having 2 to 19 carbon atoms. In the above general formula (4), X ₂ The trivalent organic group represented by is preferably a trivalent organic group having 6 to 15 carbon atoms, for example, preferably selected from the following formula (33): [Chemical 20] The aromatic group in the group represented by is more preferably an aromatic group obtained by removing a carboxyl group and an amino group from an amino-substituted isophthalic acid structure. ₂ The divalent organic group represented by is preferably an organic group having 6 to 35 carbon atoms, and more preferably a cyclic organic group having 1 to 4 substituted aromatic or aliphatic rings, or an aliphatic group or a siloxane group having no cyclic structure. ₂ The divalent organic group represented by can be exemplified by the following general formula (I) and the following general formulas (34) and (35): [Chemical 21] [Chemistry 22] {In the formula, R ₃₃ and R ₃₄ are independently selected from hydroxyl, methyl (-CH ₃ ), ethyl (-C ₂ H ₅ ), propyl (-C ₃ H ₇ ) or butyl (-C ₄ H ₉ ) and the propyl and butyl groups include various isomers} [Chemistry 23] {In the formula, m ₇ is an integer from 0 to 8, m ₈ and m ₉ Each is an independent integer from 0 to 3, m ₁₀ and m ₁₁ Each is an independent integer from 0 to 10, and R ₃₅ and R ₃₆ Methyl (-CH ₃ ), ethyl (-C ₂ H ₅ ), propyl (-C ₃ H ₇ ), butyl (-C ₄ H ₉ ) or their isomers}. As for the aliphatic group or siloxane group which does not have a ring structure, the following general formula (36) can be cited as a preferred one: [Chemical 24] {In the formula, m ₁₂ is an integer between 2 and 12, m ₁₃ is an integer from 1 to 3, m ₁₄ is an integer from 1 to 20, and R ₃₇ , R ₃₈ , R ₃₉ and R ₄₀ The polyamide resin of the present invention can be synthesized, for example, by the following method. (Synthesis of the end-capped phthalic acid compound) The first step is to make a trivalent aromatic group X ₂ A compound, for example, at least one compound selected from the group consisting of amino-substituted phthalic acid, amino-substituted isophthalic acid and amino-substituted terephthalic acid (hereinafter referred to as "phthalic acid compound"), and 1 mole of a compound that reacts with an amino group are reacted to synthesize a compound in which the amino group of the phthalic acid compound is modified and blocked with the following radical-polymerizable unsaturated bond-containing group (hereinafter referred to as "phthalic acid compound blocked body"). These can be used alone or in combination. If the phthalic acid compound is blocked with the above radical-polymerizable unsaturated bond-containing group, negative photosensitivity (photocuring) can be imparted to the polyamide resin. As the group containing a free radical polymerizable unsaturated bond, an organic group having a free radical polymerizable unsaturated bond group having 3 to 20 carbon atoms is preferred, and a group containing a methacryloyl group or an acryl group is particularly preferred. The above-mentioned phthalic acid compound end-capped product can be obtained by reacting an amino group of a phthalic acid compound with an acyl chloride, isocyanate or epoxy compound having at least one free radical polymerizable unsaturated bond group having 3 to 20 carbon atoms. Examples of suitable acyl chlorides include (meth)acryloyl chloride, 2-[(meth)acryloyloxy]acetyl chloride, 3-[(meth)acryloyloxy]propionyl chloride, 2-[(meth)acryloyloxy]ethyl chloroformate, 3-[(meth)acryloyloxypropyl]chloroformate, etc. Examples of suitable isocyanates include 2-(meth)acryloyloxyethyl isocyanate, 1,1-bis[(meth)acryloyloxymethyl]ethyl isocyanate, 2-[2-(meth)acryloyloxyethoxy]ethyl isocyanate, etc. Examples of suitable epoxides include glycidyl (meth)acrylate, etc. These can be used alone or in combination, but methacrylic acid chloride and/or 2-(methacrylic acid oxy)ethyl isocyanate are particularly preferred. Furthermore, as the end-capping product of these phthalic acid compounds, the phthalic acid compound is preferably 5-aminoisophthalic acid because a polyamide having not only excellent photosensitivity but also excellent film properties after heat curing can be obtained. The above-mentioned end-capping reaction can be carried out by stirring, dissolving and mixing the phthalic acid compound and the end-capping agent in a solvent as described below as needed in the presence of an alkaline catalyst such as pyridine or a tin-based catalyst such as di-n-butyltin dilaurate. Acyl chloride, etc., will generate hydrogen chloride as a by-product during the end-capping reaction depending on the type of the end-capping agent. In this case, in order to prevent contamination of the subsequent steps, it is preferably purified appropriately, that is, it is temporarily reprecipitated in water and washed and dried, or it is passed through a column filled with an ion exchange resin to remove the reduced ion components. (Synthesis of polyamide) The above-mentioned phthalic acid compound end-capped body is reacted with a divalent organic group Y ₂ The polyamide of the present invention can be obtained by mixing a diamine compound with an alkaline catalyst such as pyridine or triethylamine in a solvent as described below to carry out amide condensation polymerization. Examples of amide condensation polymerization methods include: a method in which a phthalic acid compound end-capping product is converted into a symmetrical polyanhydride using a dehydrating condensation agent and then mixed with a diamine compound; a method in which a phthalic acid compound end-capping product is subjected to acyl chlorination by a known method and then mixed with a diamine compound; a method in which a dicarboxylic acid component is reacted with an active esterifying agent in the presence of a dehydrating condensation agent to achieve active esterification and then mixed with a diamine compound. As dehydration condensation agents, for example, preferred ones include: dicyclohexylcarbodiimide, 1-ethoxycarbonyl-2-ethoxy-1,2-dihydroquinoline, 1,1'-carbonyldioxy-di-1,2,3-benzotriazole, N,N'-disuccinimidyl carbonate, etc. As chlorinating agents, sulfinyl chloride, etc., can be listed. As active esterification agents, N-hydroxysuccinimidyl or 1-hydroxybenzotriazole, N-hydroxy-5-northene-2,3-dicarboxylic acid imide, ethyl 2-hydroxyimino-2-cyanoacetate, 2-hydroxyimino-2-cyanoacetamide, etc. As organic groups Y ₂ The diamine compound is preferably at least one diamine compound selected from the group consisting of aromatic diamine compounds, aromatic diaminophenol compounds, alicyclic diamine compounds, linear aliphatic diamine compounds, and siloxane diamine compounds, and a plurality of diamine compounds may be used in combination as needed. Examples of the aromatic diamine compounds include p-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-Diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfonate, bis[4-(3-aminophenoxy)phenyl]sulfonate, 4,4'-bis(4-aminophenoxy)biphenyl, 4,4'-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 9 ,10-bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 1,4-bis(3-aminopropyldimethylsilyl)benzene, o-toluidine sulfide, 9,9-bis(4-aminophenyl)fluorene, and diamine compounds wherein a portion of hydrogen atoms on the benzene ring of the diamine compounds are substituted with one or more groups selected from the group consisting of methyl, ethyl, hydroxymethyl, hydroxyethyl and halogen atoms. Examples of diamine compounds in which the hydrogen atom on the benzene ring is substituted include 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 2,2'-dimethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethoxy-4,4'-diaminobiphenyl, and 3,3'-dichloro-4,4'-diaminobiphenyl. Examples of aromatic bisaminophenol compounds include 3,3'-dihydroxybenzidine, 3,3'-diamino-4,4'-dihydroxybiphenyl, 3,3'-dihydroxy-4,4'-diaminodiphenylsulfone, bis-(3-amino-4-hydroxyphenyl)methane, 2,2-bis-(3-amino-4-hydroxyphenyl)propane, 2,2-bis-(3-amino-4-hydroxyphenyl)hexafluoropropane, 2,2-bis-(3-hydroxy-4-aminophenyl)hexafluoropropane, bis-(3-hydroxy-4-aminophenyl)hexafluoropropane, 2,2-bis-(3-hydroxy-4-aminophenyl)methane, 2,2-bis-(3-hydroxy-4-aminophenyl)propane, 3,3'-dihydroxy-4,4'-diaminobenzophenone, 3,3'-dihydroxy-4,4'-diaminodiphenyl ether, 4,4'-dihydroxy-3,3'-diaminodiphenyl ether, 2,5-dihydroxy-1,4-diaminobenzene, 4,6-diaminoresorcinol, 1,1-bis(3-amino-4-hydroxyphenyl)cyclohexane, 4,4-(α-methylbenzylidene)-bis(2-aminophenol), etc. Examples of the alicyclic diamine compounds include 1,3-diaminocyclopentane, 1,3-diaminocyclohexane, 1,3-diamino-1-methylcyclohexane, 3,5-diamino-1,1-dimethylcyclohexane, 1,5-diamino-1,3-dimethylcyclohexane, 1,3-diamino-1-methyl-4-isopropylcyclohexane, 1,2-diamino-4-methylcyclohexane, 1,4-diaminocyclohexane, 1,4-diamino-2,5-diethylcyclohexane, 1,3-bis((cyclohexane)). 1,4-bis(aminomethyl)cyclohexane, 2-(3-aminocyclopentyl)-2-propylamine, menthanediamine, isophoronediamine, norethanediamine, 1-cycloheptene-3,7-diamine, 4,4'-methylenebis(cyclohexylamine), 4,4'-methylenebis(2-methylcyclohexylamine), 1,4-bis(3-aminopropyl)piperidinium, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraoxaspiro-[5,5]-undecane, etc. Examples of the linear aliphatic diamine compound include 1,2-diaminoethane, 1,4-diaminobutane, 1,6-diaminohexane, 1,8-diaminooctane, 1,10-diaminodecane, 1,12-diaminododecane and other alkylene diamines, or 2-(2-aminoethoxy)ethylamine, 2,2'-(ethylenedioxy)diethylamine, bis[2-(2-aminoethoxy)ethyl]ether and other oxirane diamines. Examples of the siloxane diamine compound include dimethyl (poly) siloxane diamine, such as PAM-E, KF-8010, and X-22-161A manufactured by Shin-Etsu Chemical Co., Ltd. After the amide polycondensation reaction is completed, the precipitate from the dehydration condensation agent in the reaction solution is filtered and separated as needed. Then, a poor solvent for polyamide such as water or aliphatic lower alcohol or a mixture thereof is added to the reaction solution to precipitate the polyamide. Furthermore, the precipitated polyamide is dissolved in the solvent again, and the reprecipitation operation is repeated to purify it, and vacuum drying is performed to isolate the target polyamide. Furthermore, in order to further improve the degree of purification, the polyamide solution can be passed through a column filled with an ion exchange resin to remove ionic impurities. The polystyrene-converted weight average molecular weight of the polyamide based on gel permeation chromatography (hereinafter referred to as "GPC") is preferably 7,000 to 70,000, and further preferably 10,000 to 50,000. If the polystyrene-converted weight average molecular weight is 7,000 or more, the basic physical properties of the hardened relief pattern are ensured. On the other hand, if the polystyrene-converted weight average molecular weight is 70,000 or less, the developing solubility when forming the relief pattern is ensured. As a dissolving solution for GPC, it is recommended to use tetrahydrofuran or N-methyl-2-pyrrolidone. In addition, the weight average molecular weight value is obtained based on a calibration curve prepared using standard monodisperse polystyrene. As the standard monodisperse polystyrene, it is recommended to select from the organic solvent standard sample STANDARD SM-105 manufactured by Showa Denko. [(A) Polyhydroxyamide] Another example of the preferred (A) resin in the photosensitive resin composition of the present invention has the following general formula (5): [Chemical 25] {In the formula, Y ₃ is a tetravalent organic group having carbon atoms, preferably a tetravalent organic group having two or more carbon atoms, Y ₄ , X ₃ and X ₄ Each independently is a divalent organic group having 2 or more carbon atoms, n ₃ is an integer between 1 and 1000, n ₄ is an integer between 0 and 500, n ₃ /(n ₃ +n ₄ )＞0.5 and contains X ₃ and Y ₃ n ₃ dihydroxydiamide units and containing X ₄ and Y ₄ n ₄ The arrangement order of the diamide units is arbitrary}, and the polyhydroxyamide (polyoxazole precursor (hereinafter, the polyhydroxyamide represented by the general formula (5) is sometimes referred to as "polyoxazole precursor")). The polyoxazole precursor is a polyoxazole having n in the general formula (5). ₃ The polymer may also have n in the above general formula (5): ₄ diamide unit (hereinafter sometimes referred to as diamide unit). ₃ The number of carbon atoms in X is preferably 2 or more and 40 or less for the purpose of obtaining photosensitivity. ₄ The number of carbon atoms in Y is preferably 2 or more and 40 or less for the purpose of obtaining photosensitivity. ₃ The number of carbon atoms in Y is preferably 2 or more and 40 or less for the purpose of obtaining photosensitivity, and Y ₄ The number of carbon atoms in the dihydroxy diamide unit is preferably 2 or more and 40 or less for the purpose of obtaining photosensitivity. ₃ (NH ₂ ) ₂ (OH) ₂ A diaminodihydroxy compound (preferably diaminophenol) having a structure of ₃ (COOH) ₂ The following is a typical example of the case where the diaminodihydroxy compound is diaminophenol. The two amine groups and hydroxyl groups of the diaminophenol are located at adjacent positions, and the dihydroxydiamide unit is ring-closed under heating at about 250 to 400°C and converted into a heat-resistant polyazole structure. ₃ For the purpose of obtaining photosensitivity characteristics, it is 1 or more, and for the purpose of obtaining photosensitivity characteristics, it is 1000 or less. ₃ The preferred range is 2 to 1000, the more preferred range is 3 to 50, and the most preferred range is 3 to 20. If necessary, the polyazole precursor may be condensed with n ₄ The diamide unit can be formed by making the diamide unit have Y ₄ (NH ₂ ) ₂ The diamine having the structure of ₄ (COOH) ₂ In the general formula (5), n ₄ The range is 0 to 500. ₄ The light sensitivity is below 500. ₄ More preferably, it is in the range of 0 to 10. If the ratio of the diamide unit to the dihydroxydiamide unit is too high, the solubility in the alkaline aqueous solution used as a developer is reduced. Therefore, n in the general formula (5) is ₃ /(n ₃ +n ₄ ) is greater than 0.5, more preferably greater than 0.7, and most preferably greater than 0.8. ₃ (NH ₂ ) ₂ (OH) ₂ Examples of diaminophenols of diaminodihydroxy compounds of the structure of bisaminophenol include: 3,3'-dihydroxybenzidine, 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, 3,3'-diamino-4,4'-dihydroxydiphenylsulfonate, 4,4'-diamino-3,3'-dihydroxydiphenylsulfonate, bis-(3-amino-4-hydroxyphenyl)methane, 2,2-bis-(3-amino-4-hydroxyphenyl)propane, 2,2-bis-(3-amino-4-hydroxyphenyl)hexafluoropropane, 2,2-bis-(4 -amino-3-hydroxyphenyl)hexafluoropropane, bis-(4-amino-3-hydroxyphenyl)methane, 2,2-bis-(4-amino-3-hydroxyphenyl)propane, 4,4'-diamino-3,3'-dihydroxybenzophenone, 3,3'-diamino-4,4'-dihydroxybenzophenone, 4,4'-diamino-3,3'-dihydroxydiphenyl ether, 3,3'-diamino-4,4'-dihydroxydiphenyl ether, 1,4-diamino-2,5-dihydroxybenzene, 1,3-diamino-2,4-dihydroxybenzene, 1,3-diamino-4,6-dihydroxybenzene, etc. These bisaminophenols may be used alone or in combination of two or more. As Y in the diaminophenol ₃ In terms of photosensitivity, the base is preferably the following formula (37): {wherein, Rs1 and Rs2 are independently hydrogen atoms, methyl groups, ethyl groups, propyl groups, cyclopentyl groups, cyclohexyl groups, phenyl groups, trifluoromethyl groups}. ₄ (NH ₂ ) ₂ Examples of diamines having a structure of include aromatic diamines and silicon diamines. Examples of aromatic diamines include m-phenylenediamine, p-phenylenediamine, 2,4-toluenediamine, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4 '-Diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 2,2'-bis(4-aminophenyl)propane, 2,2'-bis(4-aminophenyl)hexafluoropropane, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 4-methyl-2,4-bis(4-aminophenyl)-1-pentene, 4-Methyl-2,4-bis(4-aminophenyl)-2-pentene, 1,4-bis(α,α-dimethyl-4-aminobenzyl)benzene, iminodi-p-phenylenediamine, 1,5-diaminonaphthalene, 2,6-diaminonaphthalene, 4-methyl-2,4-bis(4-aminophenyl)pentane, 5(or 6)-amino-1-(4-aminophenyl)-1,3,3-trimethylindane, bis(p-aminophenyl)phosphine oxide, 4,4'-diaminoazobenzene, 4,4'-diaminodiphenylurea, 4,4'-bis(4-aminophenoxy) 2,2-Bis[4-(4-aminophenoxy)phenyl]propane, 2,2-Bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 2,2-Bis[4-(3-aminophenoxy)phenyl]benzophenone, 4,4'-Bis[4-(α,α-dimethyl-4-aminobenzyl)phenoxy]benzophenone, 4,4'-Bis[4-(α,α-dimethyl-4-aminobenzyl)phenoxy]diphenylsulfone, 4,4'-diaminobiphenyl, 4,4'-Diaminobenzophenone, phenylindanediamine, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, o-toluidine sulfonate, 2,2-bis(4-aminophenoxyphenyl)propane, bis(4-aminophenoxyphenyl)sulfonate, bis(4-aminophenoxyphenyl)sulfide, 1,4-(4-aminophenoxyphenyl)benzene, 1 ,3-(4-aminophenoxyphenyl)benzene, 9,9-bis(4-aminophenyl)fluorene, 4,4'-di-(3-aminophenoxy)diphenylsulfone, 4,4'-diaminobenzanilide, etc., and compounds wherein the hydrogen atom of the aromatic nucleus of these aromatic diamines is substituted by at least one group or atom selected from the group consisting of chlorine atom, fluorine atom, bromine atom, methyl group, methoxy group, cyano group and phenyl group. In addition, as the above diamine, silicon diamine can be selected in order to improve the adhesion with the substrate. Examples of silicon diamines include bis(4-aminophenyl)dimethylsilane, bis(4-aminophenyl)tetramethylsiloxane, bis(4-aminophenyl)tetramethyldisiloxane, bis(γ-aminopropyl)tetramethyldisiloxane, 1,4-bis(γ-aminopropyldimethylsilyl)benzene, bis(4-aminobutyl)tetramethyldisiloxane, and bis(γ-aminopropyl)tetraphenyldisiloxane. ₃ (COOH) ₂ or X ₄ (COOH) ₂ Preferred dicarboxylic acids of the structure of can be listed as X ₃ and X ₄ The preferred organic group is an aliphatic group or an aromatic group having a linear, branched or cyclic structure. ₃ and X ₄ They can be preferably obtained from the following formula (38): {In the formula, R ₄₁ Indicates the choice is -CH ₂ -、-O-、-S-、-SO ₂ -, -CO-, -NHCO- and -C(CF ₃ ) ₂ - is selected from the aromatic groups represented by the divalent groups in the group composed of}, which are preferred in terms of photosensitivity. The polyazole precursor may also be one whose terminal groups are capped with specific organic groups. When a polyazole precursor capped with a capping group is used, it is expected that the mechanical properties (especially elongation) and the shape of the cured relief pattern of the coating film of the photosensitive resin composition of the present invention after heat curing will become good. As a preferred example of such a capping group, the following formula (39) can be cited: [Chem. 28] The polystyrene-converted weight average molecular weight of the polyazole precursor based on gel permeation chromatography is preferably 3,000 to 70,000, and more preferably 6,000 to 50,000. The weight average molecular weight is preferably 3,000 or more from the viewpoint of the physical properties of the hardened relief pattern. Furthermore, from the viewpoint of resolution, it is preferably 70,000 or less. As a developing solvent for gel permeation chromatography, tetrahydrofuran and N-methyl-2-pyrrolidone are recommended. In addition, the molecular weight is obtained based on a calibration curve prepared using standard monodisperse polystyrene. As the standard monodisperse polystyrene, it is recommended to select from the organic solvent system standard sample STANDARD SM-105 manufactured by Showa Denko K.K. [(A) Polyimide] Another example of the preferred (A) resin in the photosensitive resin composition of the present invention is a resin having the above general formula (6): [Chem. 29] {Wherein, X ₅ represents a 4- to 14-valent organic group, Y ₅ Represents a 2- to 12-valent organic group, R ₁₀ and R ₁₁ represents an organic group having at least one group selected from a phenolic hydroxyl group, a sulfonic acid group or a thiol group, and may be the same or different, n ₅ is an integer between 3 and 200, and m ₃ and m ₄ Here, the resin represented by general formula (6) does not need to undergo chemical changes by heat treatment when exhibiting sufficient membrane properties, and is therefore suitable for treatment at a lower temperature, which is particularly preferred. X in the structural unit represented by general formula (6) is ₅ Preferably, it is a tetravalent to tetravalent organic group having 4 to 40 carbon atoms. In terms of both heat resistance and photosensitivity, more preferably, it is an organic group having 5 to 40 carbon atoms containing an aromatic ring or an aliphatic ring. The polyimide represented by the general formula (6) can be obtained by reacting a tetracarboxylic acid, a corresponding tetracarboxylic dianhydride, a tetracarboxylic diester dichloride, etc. with a diamine, a corresponding diisocyanate compound, or a trimethylsilyl diamine. Generally, the polyimide can be obtained by subjecting a polyamide acid, which is one of the polyimide precursors obtained by reacting a tetracarboxylic dianhydride with a diamine, to dehydration and ring closure by chemical treatment with heating or an acid or an alkali. Suitable tetracarboxylic dianhydrides include pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 2,2',3,3'-benzophenonetetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydrate, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydrate, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydrate, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydrate, bis(3,4-dicarboxyphenyl)methane dianhydrate, bis(2,3-dicarboxyphenyl)methane dianhydrate, bis(3,4-dicarboxyphenyl)sulfonate dianhydrate, bis(3,4-dicarboxyphenyl)ether dianhydrate, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 9,9-bis(3,4-dicarboxyphenyl)fluorene dianhydride, Aromatic tetracarboxylic dianhydrides such as 9,9-bis{4-(3,4-dicarboxyphenoxy)phenyl}fluorene dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 2,3,5,6-pyridinetetracarboxylic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, or aliphatic tetracarboxylic dianhydrides such as butanetetracarboxylic dianhydride and 1,2,3,4-cyclopentanetetracarboxylic dianhydride, 3,3',4,4'-diphenylsulfoniumtetracarboxylic dianhydride, and the following general formula (40): [Chemical 30] {In the formula, R ₄₂ represents an oxygen atom, C(CF ₃ ) ₂ , C(CH ₃ ) ₂ or SO ₂ The base of the ₄₃ and R ₄₄ The compounds represented by the groups { may be the same or different and represent a group selected from a hydrogen atom, a hydroxyl group or a thiol group} are preferred. Among them, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 2,2',3,3'-benzophenonetetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, bis(2,3-dicarboxyphenyl)propane dianhydrate, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydrate, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydrate, bis(3,4-dicarboxyphenyl)methane dianhydrate, bis(2,3-dicarboxyphenyl)methane dianhydrate, bis(3,4-dicarboxyphenyl)sulfone dianhydrate, Bis(3,4-dicarboxyphenyl)ether dianhydrate, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydrate, 3,3',4,4'-diphenylsulfonate tetracarboxylic dianhydride, 9,9-bis(3,4-dicarboxyphenyl)fluoric acid dianhydride, 9,9-bis{4-(3,4-dicarboxyphenoxy)phenyl}fluoric acid dianhydride and the following general formula (41): [Chemical 31] {In the formula, R ₄₅ represents an oxygen atom, C(CF ₃ ) ₂ , C(CH ₃ ) ₂ or SO ₂ The base of the ₄₆ and R ₄₇ They may be the same or different and represent a group selected from a hydrogen atom, a hydroxyl group or a thiol group}, and are acid dianhydrides having a structure represented by these groups. These groups may be used alone or in combination of two or more. ₅ represents a structural component of a diamine, and as the diamine, represents a 2- to 12-valent organic group containing an aromatic ring or an aliphatic ring, preferably an organic group having 5 to 40 carbon atoms. Specific examples of diamines include: 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 1,4-bis(4-aminophenoxy)benzene, phenylacetylene, m-phenylenediamine, p-phenylenediamine, 1, 5-naphthalenediamine, 2,6-naphthalenediamine, bis(4-aminophenoxyphenyl)sulfonate, bis(3-aminophenoxyphenyl)sulfonate, bis(4-aminophenoxy)biphenyl, bis{4-(4-aminophenoxy)phenyl}ether, 1,4-bis(4-aminophenoxy)benzene, 2,2'-dimethyl-4,4'-diaminobiphenyl, 2,2'-diethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-diethyl-4,4'-diaminobiphenyl, 2,2',3,3'-tetramethyl-4,4'-diaminobiphenyl, 3,3',4,4'-tetramethyl-4,4'-diaminobiphenyl, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 9,9-bis(4-aminophenyl)fluorene or aromatic rings thereof substituted with alkyl or halogen atoms, or aliphatic cyclohexyldiamine, methylenebiscyclohexylamine, and the following general formula (42): [Chemical 32] {In the formula, R ₄₈ represents an oxygen atom, C(CF ₃ ) ₂ , C(CH ₃ ) ₂ or SO ₂ The base of the ₄₉ ~R ₅₂ The diamines of the structure represented by the group selected from hydrogen atom, hydroxyl group or thiol group may be the same or different. Among them, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, m-phenylenediamine, p-phenylenediamine, 1,4-bis(4-aminophenoxy)benzene, 9,9-bis(4-aminophenyl)fluorene, and the following general formula (43) are preferred: [Chemical 33] {In the formula, R ₅₃ represents an oxygen atom, C(CF ₃ ) ₂ , C(CH ₃ ) ₂ or SO ₂ The base of the ₅₄ ~R ₅₇ The diamines may be the same or different and represent a group selected from a hydrogen atom, a hydroxyl group or a thiol group. Among them, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 1,4-bis(4-aminophenoxy)benzene, and the following general formula (44) are particularly preferred: [Chemical 34] {In the formula, R ₅₈ represents an oxygen atom, C(CF ₃ ) ₂ , C(CH ₃ ) ₂ or SO ₂ The base of the ₅₉ and R ₆₀ may be the same or different and represent a group selected from a hydrogen atom, a hydroxyl group or a thiol group}; a diamine having a structure represented by. These may be used alone or in combination of two or more. R of the general formula (6) ₁₀ and R ₁₁ represents a phenolic hydroxyl group, a sulfonic acid group, or a thiol group. ₁₀ and R ₁₁ , phenolic hydroxyl groups, sulfonic acid groups and/or thiol groups can be mixed. ₁₀ and R ₁₁ The amount of alkali-soluble groups in the alkaline aqueous solution changes the dissolution rate, so a photosensitive resin composition with an appropriate dissolution rate can be obtained by adjusting the amount of alkali-soluble groups in the alkaline aqueous solution. Furthermore, in order to improve the adhesion with the substrate, it is also possible to use X as a solvent without reducing the heat resistance. ₅ , Y ₅ Specifically, copolymerization with 1 to 10 mol% of bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. as diamine components can be cited. The polyimide can be synthesized by obtaining a polyimide precursor by the following method, and then completely imidizing the polyimide precursor by a known imidization method, or by stopping the imidization reaction midway to introduce a portion of the imide structure (in this case, polyamide imide), or by blending a completely imidized polymer with the polyimide precursor to introduce a portion of the imide structure. The method for obtaining the polyimide precursor is as follows: for example, tetracarboxylic dianhydride and a diamine compound (one A tetracarboxylic dianhydride (partially substituted as a terminal end-capping agent of a monoamine) is reacted at low temperature; a tetracarboxylic dianhydride (partially substituted as a terminal end-capping agent of an acid anhydride or a monoacyl chloride compound or a monoactive ester compound) is reacted with a diamine compound at low temperature; a diester is obtained from a tetracarboxylic dianhydride and an alcohol, and then reacted with a diamine (partially substituted as a terminal end-capping agent of a monoamine) in the presence of a condensation agent; a diester is obtained from a tetracarboxylic dianhydride and an alcohol, and then the remaining dicarboxylic acid is acylated and reacted with a diamine (partially substituted as a terminal end-capping agent of a monoamine). The above-mentioned polyimide preferably has a polyimide in a manner such that the imidization rate is 15% or more relative to the entire resin constituting the photosensitive resin composition. It is further preferably 20% or more. The imidization rate here refers to the ratio of imidization present in the entire resin constituting the photosensitive resin composition. If the imidization rate is lower than 15%, the amount of shrinkage during heat curing becomes large, and it is not suitable for thick film production. The imidization rate can be easily calculated by the following method. First, the infrared absorption spectrum of the polymer is measured to confirm the presence of absorption peaks originating from the imide structure of polyimide (near 1780 cm-1, near 1377 cm-1). Then, the polymer is heat treated at 350°C for 1 hour, and the infrared absorption spectrum after heat treatment is measured. The peak intensity near 1377 cm-1 is compared with the intensity before heat treatment to calculate the imidization rate in the polymer before heat treatment. The molecular weight of the polyimide is preferably 3,000 to 200,000, more preferably 5,000 to 50,000, when measured in the form of a weight average molecular weight in terms of polystyrene based on gel permeation chromatography. When the weight average molecular weight is 3,000 or more, the mechanical properties are good, and when it is 50,000 or less, the dispersibility in the developer is good, and the resolution performance of the relief pattern is good. As a developing solvent for gel permeation chromatography, tetrahydrofuran and N-methyl-2-pyrrolidone are recommended. In addition, the molecular weight is obtained based on a calibration curve prepared using standard monodisperse polystyrene. As a standard monodisperse polystyrene, it is recommended to select from the organic solvent standard sample STANDARD SM-105 manufactured by Showa Denko K.K. Furthermore, in the present invention, phenol resins can also be preferably used. [(A) Phenolic resin] The so-called phenol resin in this embodiment means a resin having a repeating unit containing a phenolic hydroxyl group. (A) Phenolic resin does not undergo structural changes such as cyclization (imidization) of polyimide precursors during thermal curing, and therefore has the advantage of being able to cure at low temperatures (e.g., below 250°C). In this embodiment, the weight average molecular weight of the phenolic resin (A) is preferably 700 to 100,000, more preferably 1,500 to 80,000, and further preferably 2,000 to 50,000. The weight average molecular weight is preferably 700 or more from the viewpoint of the suitability of the cured film for reflow soldering, and is preferably 100,000 or less from the viewpoint of the alkaline solubility of the photosensitive resin composition. The weight average molecular weight herein can be determined by gel permeation chromatography (GPC) and calculated based on a calibration curve prepared using standard polystyrene. (A) The phenolic resin is preferably selected from phenolic varnish, polyhydroxystyrene, and has the following general formula (7) from the viewpoint of solubility in alkaline aqueous solution, sensitivity and resolution when forming an anti-corrosion pattern, and residual stress of the cured film: [Chemical 35] {where a is an integer between 1 and 3, b is an integer between 0 and 3, 1≦(a+b)≦4, R ₁₂ represents a monovalent substituent selected from the group consisting of a monovalent organic group having 1 to 20 carbon atoms, a halogen atom, a nitro group and a cyano group. When b is 2 or 3, a plurality of R ₁₂ They may be the same or different from each other, and X represents a divalent aliphatic group having 2 to 10 carbon atoms which may have an unsaturated bond, a divalent alicyclic group having 3 to 20 carbon atoms, or the following general formula (8): A phenolic resin having a repeating unit represented by a divalent alkoxy group represented by (wherein p is an integer of 1 to 10), and a divalent organic group having an aromatic ring having 6 to 12 carbon atoms, and at least one phenolic resin modified with a compound having an unsaturated alkyl group having 4 to 100 carbon atoms. (Novolac) In this article, the so-called novolac means a polymer obtained by condensing phenols with formaldehyde in the presence of a catalyst. Generally speaking, novolac can be obtained by condensing 1 mol of phenols with less than 1 mol of formaldehyde relative to the phenols. Examples of the phenols include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, p-butylphenol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, catechol, resorcinol, pyrogallol, α-naphthol, β-naphthol, etc. Examples of the specific novolac include phenol/formaldehyde condensation novolac resin, cresol/formaldehyde condensation novolac resin, phenol-naphthol/formaldehyde condensation novolac resin, etc. The weight average molecular weight of the phenolic varnish is preferably 700 to 100,000, more preferably 1,500 to 80,000, and further preferably 2,000 to 50,000. The weight average molecular weight is preferably 700 or more from the viewpoint of the suitability of the cured film for reflow treatment, and on the other hand, is preferably 100,000 or less from the viewpoint of the alkali solubility of the photosensitive resin composition. (Polyhydroxystyrene) Herein, the so-called polyhydroxystyrene means a polymer as a whole containing hydroxystyrene as a polymerized unit. As a preferred example of polyhydroxystyrene, poly(p-vinylphenol) can be cited. Poly(p-vinylphenol) means a polymer as a whole containing p-vinylphenol as a polymerized unit. Therefore, as long as the purpose of the present invention is not violated, a polymerized unit other than hydroxystyrene (e.g., p-vinylphenol) may be used to constitute polyhydroxystyrene (e.g., poly-p-vinylphenol). In polyhydroxystyrene, the molar ratio of the hydroxystyrene unit based on the molar number of all polymerized units is preferably 10 mol% to 99 mol%, more preferably 20 to 97 mol%, and further preferably 30 to 95 mol%. When the above ratio is 10 mol% or more, it is advantageous from the viewpoint of alkali solubility of the photosensitive resin composition, and when it is 99 mol% or less, it is advantageous from the viewpoint of reflow solderability of a cured film formed by curing a composition containing the copolymer component described below. The polymerized units other than hydroxystyrene (eg, p-vinylphenol) may be any polymerized units that can be copolymerized with hydroxystyrene (eg, p-vinylphenol). The copolymer components for forming the polymerized units other than hydroxystyrene (e.g., p-vinylphenol) are not limited, and examples thereof include methyl acrylate, methyl methacrylate, hydroxyethyl acrylate, butyl methacrylate, octyl acrylate, 2-ethoxyethyl methacrylate, tert-butyl acrylate, 1,5-pentanediol diacrylate, N,N-diethylaminoethyl acrylate, ethylene glycol diacrylate, 1,3-propylene glycol diacrylate, decanediol diacrylate, decanediol dimethacrylate, 1,4-cyclohexanediol diacrylate, 2,2-dihydroxymethylpropane diacrylate, glycerol diacrylate, tripropylene glycol diacrylate, glycerol triacrylate, 2,2-di(p-hydroxyphenyl)propane dimethacrylate, triethylene glycol diacrylate, polyoxyethyl-2-2-di(p-hydroxyphenyl)propane dimethacrylate, triethylene glycol dimethacrylate, and the like. Acrylic acid esters such as acrylate, polyoxypropyl trihydroxymethylpropane triacrylate, ethylene glycol dimethacrylate, butanediol dimethacrylate, 1,3-propylene glycol dimethacrylate, butanediol dimethacrylate, 1,3-propylene glycol dimethacrylate, 1,2,4-butanetriol trimethacrylate, 2,2,4-trimethyl-1,3-pentanediol dimethacrylate, pentaerythritol trimethacrylate, 1,2-1-phenylethylene dimethacrylate, pentaerythritol tetramethacrylate, trihydroxymethylpropane trimethacrylate, 1,5-pentanediol dimethacrylate and 1,4-benzenediol dimethacrylate; styrene and substituted styrenes such as 2-methylstyrene and vinyltoluene; vinyl ester monomers such as vinyl acrylate and vinyl methacrylate; and o-vinylphenol, m-vinylphenol, etc. In addition, as the phenolic varnish and polyhydroxystyrene described above, one kind or two or more kinds can be used in combination. The weight average molecular weight of polyhydroxystyrene is preferably 700 to 100,000, more preferably 1,500 to 80,000, and further preferably 2,000 to 50,000. From the viewpoint of the suitability of the cured film for reflow treatment, the weight average molecular weight is preferably 700 or more, and from the viewpoint of the alkaline solubility of the photosensitive resin composition, it is preferably 100,000 or less. (Phenol resin represented by general formula (7)) In this embodiment, (A) phenol resin is also preferably a phenol resin having the following general formula (7): [Chemical 37] {where a is an integer between 1 and 3, b is an integer between 0 and 3, 1≦(a+b)≦4, R ₁₂ represents a monovalent substituent selected from the group consisting of a monovalent organic group having 1 to 20 carbon atoms, a halogen atom, a nitro group and a cyano group. When b is 2 or 3, a plurality of R ₁₂ They may be the same or different from each other, and X represents a divalent aliphatic group having 2 to 10 carbon atoms which may have an unsaturated bond, a divalent alicyclic group having 3 to 20 carbon atoms, or the following general formula (8): A phenolic resin having a repeating unit represented by a divalent alkoxy group represented by (wherein p is an integer from 1 to 10) and a divalent organic group from the group consisting of a divalent organic group having an aromatic ring with 6 to 12 carbon atoms. The phenolic resin having the above-mentioned repeating unit is particularly advantageous in that it can be cured at a low temperature and can form a cured film with good elongation compared to, for example, the polyimide resin and polybenzoxazole resin previously used. The above-mentioned repeating unit present in the phenolic resin molecule may be a combination of one or more types. In the above-mentioned general formula (7), R ₁₂ From the viewpoint of reactivity in synthesizing the resin of the general formula (7), it is a monovalent substituent selected from the group consisting of a monovalent organic group having 1 to 20 carbon atoms, a halogen atom, a nitro group and a cyano group. ₁₂ From the viewpoint of alkaline solubility, it is preferably selected from a halogen atom, a nitro group, a cyano group, an aliphatic group having 1 to 10 carbon atoms which may have an unsaturated bond, an aromatic group having 6 to 20 carbon atoms, and the following general formula (45): {In the formula, R ₆₁ , R ₆₂ and R ₆₃ each independently represents a hydrogen atom, an aliphatic group having 1 to 10 carbon atoms which may have an unsaturated bond, an alicyclic group having 3 to 20 carbon atoms, or an aromatic group having 6 to 20 carbon atoms, and R ₆₄ represents a monovalent substituent from the group consisting of four groups represented by {a divalent aliphatic group having 1 to 10 carbon atoms which may have an unsaturated bond, a divalent alicyclic group having 3 to 20 carbon atoms, or a divalent aromatic group having 6 to 20 carbon atoms}. In the present embodiment, in the above general formula (7), a is an integer of 1 to 3, but is preferably 2 from the viewpoint of alkali solubility and elongation. In addition, when a is 2, the substitution position of the hydroxyl groups may be any of the ortho, meta and para positions. Furthermore, when a is 3, the substitution position of the hydroxyl groups may be any of the 1, 2, 3-positions, 1, 2, 4-positions and 1, 3, 5-positions. In the present embodiment, in the above general formula (7), when a is 1, in order to improve the alkali solubility, a phenolic resin (hereinafter also referred to as (a1) resin) selected from novolac and polyhydroxystyrene (hereinafter also referred to as (a2) resin) may be further mixed with the phenolic resin having the repeating unit represented by the general formula (7). The mixing ratio of the (a1) resin to the (a2) resin is preferably in the range of (a1)/(a2) = 10/90 to 90/10 in terms of mass ratio. From the viewpoint of solubility in alkaline aqueous solution and elongation of the cured film, the mixing ratio is preferably (a1)/(a2)=10/90 to 90/10, more preferably (a1)/(a2)=20/80 to 80/20, and further preferably (a1)/(a2)=30/70 to 70/30. Regarding the phenolic varnish and polyhydroxystyrene as the above-mentioned (a2) resin, the same resins as those shown in the above-mentioned (phenolic varnish) and (polyhydroxystyrene) items can be used. In the present embodiment, in the above-mentioned general formula (7), b is an integer of 0 to 3, but from the viewpoint of alkaline solubility and elongation, it is preferably 0 or 1. In addition, when b is 2 or 3, the plurality of R ₁₂ They may be the same or different from each other. Furthermore, in the present embodiment, in the above general formula (7), a and b satisfy the relationship of 1≦(a+b)≦4. In the present embodiment, in the above general formula (7), X is a divalent organic group selected from the group consisting of a divalent aliphatic group having 2 to 10 carbon atoms and having an unsaturated bond, a divalent alicyclic group having 3 to 20 carbon atoms, an alkoxy group represented by the above general formula (8), and a divalent organic group having an aromatic ring having 6 to 12 carbon atoms from the viewpoint of the shape of the cured relief pattern and the elongation of the cured film. Among these divalent organic groups, from the viewpoint of the toughness of the cured film, X is preferably selected from the following general formula (9): [Chemical 40] {In the formula, R ₁₃ , R ₁₄ , R ₁₅ and R ₁₆ Each of the following is independently a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a monovalent aliphatic group having 1 to 10 carbon atoms in which a part or all of the hydrogen atoms are replaced by fluorine atoms, n ₆ is an integer from 0 to 4, and n ₆ When R is an integer from 1 to 4 ₁₇ is a halogen atom, a hydroxyl group, or a monovalent organic group with 1 to 12 carbon atoms, with at least one R ₁₇ For hydroxyl, n ₆ When the number is an integer from 2 to 4, the number of R ₁₇ The divalent groups represented by { may be the same or different from each other}, and the following general formula (10): [Chemical 41] {In the formula, R ₁₈ , R ₁₉ , R ₂₀ and R _{twenty one} Each independently represents a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a monovalent aliphatic group having 1 to 10 carbon atoms in which a part or all of the hydrogen atoms are replaced by fluorine atoms; W is a single bond, an aliphatic group having 1 to 10 carbon atoms which may be replaced by a fluorine atom, an alicyclic group having 3 to 20 carbon atoms which may be replaced by a fluorine atom, and the following general formula (8): (wherein p is an integer from 1 to 10) and the following formula (11): The divalent organic group X having an aromatic ring with 6 to 12 carbon atoms preferably has a carbon number of 8 to 75, more preferably 8 to 40. Furthermore, the structure of the divalent organic group X having an aromatic ring with 6 to 12 carbon atoms is generally different from that of the general formula (7) in which an OH group and any R are bonded to the aromatic ring. ₁₂ Furthermore, the divalent organic group represented by the general formula (10) is more preferably the following formula (12) from the viewpoint of good pattern forming property of the resin composition and good elongation of the cured film after curing: [Chemical 44] The divalent organic group represented by is preferably the following formula (13): A divalent organic group represented by. In the structure represented by the general formula (7), X is preferably a structure represented by the above-mentioned formula (12) or (13), and the ratio of the part represented by the structure represented by the formula (12) or (13) is preferably 20% by mass or more, and more preferably 30% by mass or more from the viewpoint of elongation. The above ratio is preferably 80% by mass or less, and more preferably 70% by mass or less from the viewpoint of alkali solubility of the composition. Furthermore, among the phenolic resins having the structure represented by the above-mentioned general formula (7), from the viewpoint of alkali solubility of the composition and elongation of the cured film, a structure having both a structure represented by the following general formula (14) and a structure represented by the following general formula (15) in the same resin skeleton is particularly preferred. [Chemistry 46] {In the formula, R _{twenty one} is a monovalent group having 1 to 10 carbon atoms selected from the group consisting of alkyl groups and alkoxy groups, n ₇ is 2 or 3, n ₈ is an integer between 0 and 2, m ₅ is an integer between 1 and 500, 2≦(n ₇ +n ₈ )≦4, at n ₈ When the number is 2, multiple R _{twenty one} They may be the same or different from each other} [化47] {In the formula, R _{twenty two} and R _{twenty three} Each of the following is independently a monovalent group having 1 to 10 carbon atoms selected from the group consisting of an alkyl group and an alkoxy group, n ₉ is an integer from 1 to 3, n ₁₀ is an integer between 0 and 2, n ₁₁ is an integer from 0 to 3, m ₆ is an integer between 1 and 500, 2≦(n ₉ +n ₁₀ )≦4, at n ₁₀ When the number is 2, multiple R _{twenty two} They may be the same or different from each other. ₁₁ In case of 2 or 3, multiple R _{twenty three} They may be the same or different from each other} m in the above general formula (14) ₅ and m in the above general formula (15) ₆ represents the total number of the respective repeating units in the main chain of the phenolic resin. That is, in the phenolic resin (A), for example, the repeating units in the brackets in the structure represented by the above general formula (14) and the repeating units in the brackets in the structure represented by the above general formula (15) can be arranged randomly, in blocks, or in a combination thereof. ₅ and m ₆ Each of them is an integer between 1 and 500, the lower limit is preferably 2, more preferably 3, and the upper limit is preferably 450, more preferably 400, and further preferably 350. ₅ and m ₆ From the viewpoint of the toughness of the cured film, it is preferably independently 2 or more, and from the viewpoint of solubility in alkaline aqueous solution, it is preferably 450 or less. ₅ and m ₆ The total is preferably 2 or more, more preferably 4 or more, and further preferably 6 or more from the viewpoint of toughness of the film after curing. From the viewpoint of solubility in alkaline aqueous solution, it is preferably 200 or less, more preferably 175 or less, and further preferably 150 or less. In the phenolic resin (A) having both the structure represented by the general formula (14) and the structure represented by the general formula (15) in the same resin skeleton, the higher the molar ratio of the structure represented by the general formula (14), the better the physical properties of the film after curing and the better the heat resistance. On the other hand, the higher the molar ratio of the structure represented by the general formula (15), the better the alkali solubility and the better the pattern shape after curing. Therefore, the ratio m of the structure represented by the general formula (14) to the structure represented by the general formula (15) is ₅ /m ₆ From the viewpoint of the physical properties of the film after curing, it is preferably 20/80 or more, more preferably 40/60 or more, and particularly preferably 50/50 or more. From the viewpoint of alkali solubility and the shape of the cured relief pattern, it is preferably 90/10 or less, more preferably 80/20 or less, and further preferably 70/30 or less. The phenolic resin having the repeating unit represented by the general formula (7) typically comprises a phenolic compound and a copolymer component (specifically, a compound having an aldehyde group (including a compound that decomposes to form an aldehyde compound such as trisane), a compound having a ketone group, a compound having two hydroxymethyl groups in the molecule, a compound having two alkoxymethyl groups in the molecule, and a compound having two halogenalkyl groups in the molecule), and more typically can be synthesized by subjecting the monomer components comprising the above components to a polymerization reaction. For example, the phenol resin (A) can be obtained by polymerizing phenol and/or phenol derivatives (hereinafter collectively referred to as "phenol compounds") described below with copolymerization components such as aldehyde compounds, ketone compounds, hydroxymethyl compounds, alkoxymethyl compounds, diene compounds or halogenalkyl compounds. In this case, in the above general formula (7), the aromatic ring has an OH group and any R ₁₂ The part represented by the structure of the base is derived from the above-mentioned phenol compound, and the part represented by X is derived from the above-mentioned copolymer component. From the viewpoint of reaction control and the stability of the obtained (A) phenol resin and photosensitive resin composition, the molar ratio of the phenol compound to the above-mentioned copolymer component is preferably 5:1 to 1.01:1, more preferably 2.5:1 to 1.1:1. The weight average molecular weight of the phenol resin having the repeating unit represented by the general formula (7) is preferably 700 to 100,000, more preferably 1,500 to 80,000, and further preferably 2,000 to 50,000. The weight average molecular weight is preferably 700 or more from the viewpoint of the suitability of the cured film for reflow treatment, and is preferably 100,000 or less from the viewpoint of the alkali solubility of the photosensitive resin composition. Examples of phenolic compounds that can be used to obtain the phenolic resin having the repeating unit represented by the general formula (7) include cresol, ethylphenol, propylphenol, butylphenol, pentylphenol, cyclohexylphenol, hydroxybiphenyl, benzylphenol, nitrobenzylphenol, cyanobenzylphenol, adamantanephenol, nitrophenol, fluorophenol, chlorophenol, bromophenol, trifluoromethylphenol, N-(hydroxyphenyl)-5-nitropropene-2,3-dicarboxylic acid imide, N-(hydroxyphenyl)-5-methyl-5-nitropropene-2,3-dicarboxylic acid imide, and N-(hydroxyphenyl)-5-methyl-5-nitropropene-2,3-dicarboxylic acid imide. 2,3-dicarboxylic acid imide, trifluoromethylphenol, hydroxybenzoic acid, methyl hydroxybenzoate, ethyl hydroxybenzoate, benzyl hydroxybenzoate, hydroxybenzamide, hydroxybenzaldehyde, hydroxyacetophenone, hydroxybenzophenone, hydroxybenzonitrile, resorcinol, xylenol, catechol, methyl catechol, ethyl catechol, hexyl catechol, benzyl catechol, nitrobenzyl catechol, methyl resorcinol, ethyl resorcinol, hexyl resorcinol, benzyl resorcinol, nitrobenzyl resorcinol , hydroquinone, caffeic acid, dihydroxybenzoic acid, methyl dihydroxybenzoate, ethyl dihydroxybenzoate, butyl dihydroxybenzoate, propyl dihydroxybenzoate, benzyl dihydroxybenzoate, dihydroxybenzamide, dihydroxybenzaldehyde, dihydroxyacetophenone, dihydroxybenzophenone, dihydroxybenzonitrile, N-(dihydroxyphenyl)-5-northene-2,3-dicarboxylic imide, N-(dihydroxyphenyl)-5-methyl-5-northene-2,3-dicarboxylic imide, nitrocatechol, flucatechin Phenol, chlorocatechol, bromocatechol, trifluoromethylcatechol, nitroresorcinol, fluororesorcinol, chlororesorcinol, bromoresorcinol, trifluoromethylresorcinol, pyrogallol, phloroglucinol, 1,2,4-trihydroxybenzene, trihydroxybenzoic acid, methyl trihydroxybenzoate, ethyl trihydroxybenzoate, butyl trihydroxybenzoate, propyl trihydroxybenzoate, benzyl trihydroxybenzoate, trihydroxybenzamide, trihydroxybenzaldehyde, trihydroxyacetophenone, trihydroxybenzophenone, trihydroxybenzonitrile, etc. Examples of the aldehyde compound include acetaldehyde, propionaldehyde, trimethylacetaldehyde, butyraldehyde, valeraldehyde, hexanal, trioxane, glyoxal, cyclohexanal, diphenylacetaldehyde, ethylbutyraldehyde, benzaldehyde, glyoxylic acid, 5-norbutene-2-carboxaldehyde, malondialdehyde, succinaldehyde, glutaraldehyde, salicylic acid, naphthaldehyde, terephthalaldehyde, etc. Examples of the ketone compound include acetone, methyl ethyl ketone, diethyl ketone, dipropyl ketone, dicyclohexyl ketone, dibenzyl ketone, cyclopentanone, cyclohexanone, dicyclohexanone, cyclohexanedione, 3-butyn-2-one, 2-norbutanone, adamantone, 2,2-bis(4-oxacyclohexyl)propane, etc. Examples of the hydroxymethyl compounds include 2,6-bis(hydroxymethyl)-p-cresol, 2,6-bis(hydroxymethyl)-4-ethylphenol, 2,6-bis(hydroxymethyl)-4-propylphenol, 2,6-bis(hydroxymethyl)-4-n-butylphenol, 2,6-bis(hydroxymethyl)-4-tert-butylphenol, 2,6-bis(hydroxymethyl)-4-methoxyphenol, 2,6-bis(hydroxymethyl)-4-ethoxyphenol, 2,6-bis(hydroxymethyl)-4-propoxyphenol, 2,6-bis(hydroxymethyl)-4-n-butoxyphenol, 2,6-bis(hydroxymethyl)- )-4-tert-butoxyphenol, 1,3-bis(hydroxymethyl)urea, ribitol, arabitol, allol, 2,2-bis(hydroxymethyl)butyric acid, 2-benzyloxy-1,3-propanediol, 2,2-dimethyl-1,3-propanediol, 2,2-diethyl-1,3-propanediol, glycerol monoacetate, 2-methyl-2-nitro-1,3-propanediol, 5-northene-2,2-dimethanol, 5-northene-2,3-dimethanol, pentaerythritol, 2-phenyl-1,3-propanediol, trihydroxymethylethane, trihydroxymethylpropane, 3,6-bis(hydroxymethyl)durene, 2-nitro 1,10-dihydroxydecane, 1,12-dihydroxydodecane, 1,4-bis(hydroxymethyl)cyclohexane, 1,4-bis(hydroxymethyl)cyclohexene, 1,6-bis(hydroxymethyl)adamantane, 1,4-benzenedimethanol, 1,3-benzenedimethanol, 2,6-bis(hydroxymethyl)-1,4-dimethoxybenzene, 2,3-bis(hydroxymethyl)naphthalene, 2,6-bis(hydroxymethyl)naphthalene, 1,8-bis(hydroxymethyl)anthracene, 2,2'-bis(hydroxymethyl)diphenyl ether, 4,4'-bis(hydroxymethyl)diphenyl ether, 4,4'-bis(hydroxymethyl)diphenyl sulfide , 4,4'-bis(hydroxymethyl)benzophenone, 4'-hydroxymethylphenyl 4-hydroxymethylbenzoate, 4'-hydroxymethylaniline 4,4'-bis(hydroxymethyl)phenylurea, 4,4'-bis(hydroxymethyl)phenylcarbamate, 1,8-bis(hydroxymethyl)anthracene, 4,4'-bis(hydroxymethyl)biphenyl, 2,2'-dimethyl-4,4'-bis(hydroxymethyl)biphenyl, 2,2-bis(4-hydroxymethylphenyl)propane, ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, tetrapropylene glycol, etc. Examples of the alkoxymethyl compound include 2,6-bis(methoxymethyl)-p-cresol, 2,6-bis(methoxymethyl)-4-ethylphenol, 2,6-bis(methoxymethyl)-4-propylphenol, 2,6-bis(methoxymethyl)-4-n-butylphenol, 2,6-bis(methoxymethyl)-4-tert-butylphenol, 2,6-bis(methoxymethyl)-4-methoxyphenol, 2,6-bis(methoxymethyl)-4-ethoxyphenol, 2,6-bis(methoxymethyl)-4-propoxyphenol. , 2,6-bis(methoxymethyl)-4-n-butoxyphenol, 2,6-bis(methoxymethyl)-4-tert-butoxyphenol, 1,3-bis(methoxymethyl)urea, 2,2-bis(methoxymethyl)butyric acid, 2,2-bis(methoxymethyl)-5-northene, 2,3-bis(methoxymethyl)-5-northene, 1,4-bis(methoxymethyl)cyclohexane, 1,4-bis(methoxymethyl)cyclohexene, 1,6-bis(methoxymethyl)adamantane, 1,4-bis(methoxymethyl)benzene, 1,3-bis( 2,6-bis(methoxymethyl)-1,4-dimethoxybenzene, 2,3-bis(methoxymethyl)naphthalene, 2,6-bis(methoxymethyl)naphthalene, 1,8-bis(methoxymethyl)anthracene, 2,2'-bis(methoxymethyl)diphenyl ether, 4,4'-bis(methoxymethyl)diphenyl ether, 4,4'-bis(methoxymethyl)diphenyl sulfide, 4,4'-bis(methoxymethyl)benzophenone, 4'-methoxymethylphenyl 4-methoxybenzoate, 4'-methoxymethylbenzoate 4,4'-bis(methoxymethyl)phenylurea, 4,4'-bis(methoxymethyl)phenylcarbamate, 1,8-bis(methoxymethyl)anthracene, 4,4'-bis(methoxymethyl)biphenyl, 2,2'-dimethyl-4,4'-bis(methoxymethyl)biphenyl, 2,2-bis(4-methoxymethylphenyl)propane, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, propylene glycol dimethyl ether, dipropylene glycol dimethyl ether, tripropylene glycol dimethyl ether, tetrapropylene glycol dimethyl ether, etc. Examples of the diene compound include butadiene, pentadiene, hexadiene, heptadiene, octadiene, 3-methyl-1,3-butadiene, 1,3-butanediol dimethacrylate, 2,4-hexadiene-1-ol, methylcyclohexadiene, cyclopentadiene, cyclohexadiene, cycloheptadiene, cyclooctadiene, dicyclopentadiene, 1-hydroxydicyclopentadiene, and 1-hydroxydicyclopentadiene. Olefins, 1-methylcyclopentadiene, methyldicyclopentadiene, diallyl ether, diallyl sulfide, diallyl adipate, 2,5-northadiene, tetrahydroindene, 5-ethylidene-2-northadiene, 5-vinyl-2-northadiene, triallyl cyanurate, diallyl isocyanurate, triallyl isocyanurate, diallylpropyl isocyanurate, etc. Examples of the halogenated alkyl compound include dichloroxylene, bischloromethyldimethoxybenzene, bischloromethyldurene, bischloromethylbiphenyl, bischloromethyl-biphenylcarboxylic acid, bischloromethyl-biphenyldicarboxylic acid, bischloromethyl-methylbiphenyl, bischloromethyl-dimethylbiphenyl, bischloromethylanthracene, ethylene glycol bis(chloroethyl)ether, diethylene glycol bis(chloroethyl)ether, triethylene glycol bis(chloroethyl)ether, tetraethylene glycol bis(chloroethyl)ether, etc. The phenolic compound and the copolymerization component are condensed by dehydration, dehalogenation, or dehydration, or polymerized while breaking unsaturated bonds, thereby obtaining the phenolic resin (A). A catalyst may be used for the polymerization. Examples of the acidic catalyst include hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, phosphorous acid, methanesulfonic acid, p-toluenesulfonic acid, dimethylsulfuric acid, diethylsulfuric acid, acetic acid, oxalic acid, 1-hydroxyethylidene-1,1'-diphosphonic acid, zinc acetate, boron trifluoride, boron trifluoride-phenol complex, boron trifluoride-ether complex, and the like. On the other hand, examples of alkaline catalysts include lithium hydroxide, sodium hydroxide, potassium hydroxide, calcium hydroxide, barium hydroxide, sodium carbonate, triethylamine, pyridine, 4-N,N-dimethylaminopyridine, piperidine, piperidine, 1,4-diazabicyclo[2.2.2]octane, 1,8-diazabicyclo[5.4.0]-7-undecene, 1,5-diazabicyclo[4.3.0]-5-nonene, ammonia, hexamethylenetetramine, and the like. The amount of the catalyst used to obtain the phenol resin having the repeating structure represented by the general formula (7) is preferably 100 mol% of the total mole of the copolymer components (i.e., components other than the phenol compound), preferably in the range of 0.01 mol% to 100 mol%. (A) In the synthesis reaction of the phenol resin, the reaction temperature is usually preferably 40°C to 250°C, more preferably 100°C to 200°C, and the reaction time is preferably about 1 hour to 10 hours. A solvent that can fully dissolve the resin may be used as necessary. Furthermore, the phenolic resin having the repeating structure represented by the general formula (7) may be polymerized with a phenolic compound that is not a raw material of the structure of the general formula (7) within a range that does not impair the effect of the present invention. The range that does not impair the effect of the present invention is, for example, 30% or less of the total molar amount of the phenolic compound that is a raw material of the phenolic resin (A). (Phenol resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms) The phenol resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms is a condensation product of a reaction product of phenol or a derivative thereof with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms (hereinafter sometimes referred to as an "unsaturated hydrocarbon-containing compound") (hereinafter also referred to as an "unsaturated hydrocarbon-modified phenol derivative") and an aldehyde, or a reaction product of a phenol resin and a compound having an unsaturated hydrocarbon group. The phenol derivative may be the same as the phenol derivative described above as a raw material for the phenol resin having a repeating unit represented by the general formula (7). The unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated hydrocarbon groups from the viewpoint of residual stress of the cured film and suitability for reflow treatment. Furthermore, from the viewpoint of compatibility when preparing a resin composition and residual stress of the cured film, the unsaturated hydrocarbon group preferably has 4 to 100 carbon atoms, more preferably 8 to 80 carbon atoms, and further preferably 10 to 60 carbon atoms. Examples of the unsaturated hydrocarbon group-containing compound include unsaturated hydrocarbon groups having 4 to 100 carbon atoms, polybutadiene having a carboxyl group, epoxidized polybutadiene, linalool, oleyl alcohol, unsaturated fatty acids, and unsaturated fatty acid esters. Suitable unsaturated fatty acids include butyric acid, myristic acid, palmitic acid, oleic acid, elaidic acid, isoleic acid, scuroleic acid, erucic acid, euteric acid, linoleic acid, α-linolenic acid, eleostearic acid, octadecatetraenoic acid, arachidonic acid, eicosapentaenoic acid, herringic acid, and docosahexaenoic acid. Among them, vegetable oils as unsaturated fatty acid esters are particularly preferred from the viewpoint of the elongation of the hardened film and the flexibility of the hardened film. Vegetable oils generally contain esters of glycerol and unsaturated fatty acids, and there are non-drying oils with an iodine value of less than 100, semi-drying oils with an iodine value of more than 100 and less than 130, or drying oils with an iodine value of more than 130. Examples of non-drying oils include olive oil, linseed oil, Polygonum multiflorum oil, sasanqua oil, camellia oil, castor oil, and peanut oil. Examples of semi-drying oils include corn oil, cottonseed oil, and sesame oil. Examples of drying oils include tung oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, perilla oil, and mustard oil. In addition, processed vegetable oils obtained from these vegetable oils may also be used. Among the above-mentioned vegetable oils, non-drying oils are preferably used from the viewpoint of preventing gelation caused by excessive reaction during the reaction of phenol or its derivatives or phenolic resins with vegetable oils and improving the yield. On the other hand, from the viewpoint of improving the adhesion, mechanical properties, and heat shock resistance of the anti-corrosion pattern, drying oils are preferably used. Among the drying oils, tung oil, linseed oil, soybean oil, walnut oil and safflower oil are preferred, and tung oil and linseed oil are more preferred, in terms of being able to more effectively and reliably exert the effects of the present invention. These vegetable oils may be used alone or in combination of two or more. The reaction of phenol or its derivatives with the unsaturated hydrocarbon-containing compound is preferably carried out at 50 to 130°C. Regarding the reaction ratio of phenol or its derivatives with the unsaturated hydrocarbon-containing compound, from the viewpoint of reducing the residual stress of the cured film, the unsaturated hydrocarbon-containing compound is preferably 1 to 100 parts by mass, and more preferably 5 to 50 parts by mass, relative to 100 parts by mass of phenol or its derivatives. If the unsaturated hydrocarbon-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the heat resistance of the cured film tends to decrease. In the above reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid, etc. may be used as a catalyst as necessary. The unsaturated hydrocarbon-modified phenol derivative generated by the above reaction is polycondensed with aldehydes to generate a phenol resin modified with an unsaturated hydrocarbon-containing compound. Aldehydes are selected from, for example, formaldehyde, acetaldehyde, furfural, benzaldehyde, hydroxybenzaldehyde, methoxybenzaldehyde, hydroxyphenylacetaldehyde, methoxyphenylacetaldehyde, crotonaldehyde, chloroacetaldehyde, chlorophenylacetaldehyde, acetone, glyceraldehyde, glyoxylic acid, methyl glyoxylate, phenyl glyoxylate, hydroxyphenyl glyoxylate, methylformylacetic acid, methylformylacetate, 2-methylpropionic acid, methyl 2-methylpropionic acid, pyruvic acid, acetopropionic acid, 4-acetobutyric acid, acetone dicarboxylic acid, and 3,3'-4,4'-benzophenone tetracarboxylic acid. Formaldehyde precursors such as paraformaldehyde and trioxane may also be used. These aldehydes may be used alone or in combination of two or more. The reaction of the above-mentioned aldehydes with the above-mentioned unsaturated hydrocarbon-modified phenol derivatives is a condensation polymerization reaction, and the previously known synthesis conditions of phenol resins can be adopted. The reaction is preferably carried out in the presence of a catalyst such as an acid or a base. From the viewpoint of the polymerization degree (molecular weight) of the resin, it is more preferable to use an acid catalyst. As an acid catalyst, for example: hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid and oxalic acid can be listed. Such acid catalysts can be used alone or in combination of two or more. The above-mentioned reaction is usually preferably carried out at a reaction temperature of 100 to 120°C. In addition, the reaction time varies depending on the type or amount of the catalyst used, and is usually 1 to 50 hours. After the reaction is completed, the reaction product is decompressed and dehydrated at a temperature below 200°C to obtain a phenol resin modified with a compound containing an unsaturated alkyl group. Furthermore, solvents such as toluene, xylene, and methanol can be used during the reaction. The phenol resin modified with a compound containing an unsaturated alkyl group can also be obtained by condensing a compound other than phenol such as m-xylene and aldehydes with the above-mentioned unsaturated alkyl-modified phenol derivative. In this case, the added molar ratio of the compound other than phenol relative to the compound obtained by the reaction of the phenol derivative with the unsaturated alkyl compound is preferably less than 0.5. The phenolic resin modified with the unsaturated hydrocarbon-containing compound can also be obtained by reacting the phenolic resin with the unsaturated hydrocarbon-containing compound. The phenolic resin used in this case is a condensation product of a phenolic compound (i.e., phenol and/or a phenolic derivative) and an aldehyde. In this case, as the phenolic derivative and the aldehyde, the same ones as those mentioned above can be used, and the phenolic resin can be synthesized under the above-mentioned previously known conditions. As specific examples of phenolic resins obtained from phenolic compounds and aldehydes suitable for forming phenolic resins modified with unsaturated hydrocarbon compounds, there can be cited phenol/formaldehyde novolac resins, cresol/formaldehyde novolac resins, benzylphenol/formaldehyde novolac resins, resorcinol/formaldehyde novolac resins and phenol-naphthol/formaldehyde novolac resins. The unsaturated hydrocarbon compound to be reacted with the phenolic resin can be the same as the unsaturated hydrocarbon compound used in the production of the unsaturated hydrocarbon-modified phenol derivatives reacted with aldehydes. The reaction of the phenolic resin with the unsaturated hydrocarbon compound is usually preferably carried out at 50 to 130°C. In addition, regarding the reaction ratio of the phenol resin and the compound containing an unsaturated alkyl group, from the viewpoint of improving the flexibility of the cured film (anti-corrosion pattern), the unsaturated alkyl group-containing compound is preferably 1 to 100 parts by mass, more preferably 2 to 70 parts by mass, and further preferably 5 to 50 parts by mass relative to 100 parts by mass of the phenol resin. If the unsaturated alkyl group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the possibility of gelation during the reaction tends to increase, and the heat resistance of the cured film tends to decrease. When the phenol resin and the compound containing an unsaturated alkyl group are reacted, p-toluenesulfonic acid, trifluoromethanesulfonic acid, etc. may be used as a catalyst as needed. Furthermore, solvents such as toluene, xylene, methanol, tetrahydrofuran, etc. can be used during the reaction, which will be described in detail below. A phenolic resin that has been acid-modified by reacting the phenolic hydroxyl groups remaining in the phenolic resin modified with the unsaturated alkyl compound generated by the above method with a polyacid anhydride can also be used. By introducing carboxyl groups through acid modification using a polyacid anhydride, the solubility in an alkaline aqueous solution (used as a developer) is further improved. The polyacid anhydride is not particularly limited as long as it has an acid anhydride group formed by dehydration condensation of the carboxyl groups of a polyacid containing multiple carboxyl groups. Examples of the polyacid anhydride include dibasic acid anhydrides such as phthalic anhydride, succinic anhydride, octenylsuccinic anhydride, pentadecenylsuccinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, nalidic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride and trimellitic anhydride, and aromatic tetrabasic acid dianhydrides such as biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic dianhydride and benzophenonetetracarboxylic dianhydride. These can be used alone or in combination of two or more. Among these, the polyanhydride is preferably a dibasic anhydride, and more preferably one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride and hexahydrophthalic anhydride. In this case, it has the advantage of being able to form an anti-corrosion pattern with a better shape. The reaction of the phenolic hydroxyl group and the polyanhydride can be carried out at 50-130°C. In the reaction, relative to 1 mol of the phenolic hydroxyl group, it is preferred to react 0.10-0.80 mol of the polyanhydride, more preferably 0.15-0.60 mol, and further preferably 0.20-0.40 mol. If the polyacid anhydride is less than 0.10 mol, the developing property tends to be reduced, and if it exceeds 0.80 mol, the alkali resistance of the unexposed part tends to be reduced. Furthermore, from the viewpoint of making the reaction proceed quickly, a catalyst may be contained in the above reaction as needed. As catalysts, there can be listed: tertiary amines such as triethylamine, quaternary ammonium salts such as triethylbenzylammonium chloride, imidazole compounds such as 2-ethyl-4-methylimidazole, phosphorus compounds such as triphenylphosphine. Furthermore, the acid value of the phenolic resin modified with the polyacid anhydride is preferably 30 to 200 mgKOH/g, more preferably 40 to 170 mgKOH/g, and further preferably 50 to 150 mgKOH/g. If the acid value is less than 30 mgKOH/g, alkaline development tends to take longer time than when the acid value is within the above range, and if it exceeds 200 mgKOH/g, the developer resistance of the unexposed portion tends to decrease compared to when the acid value is within the above range. The molecular weight of the phenolic resin modified with an unsaturated hydrocarbon-containing compound is preferably 1,000 to 100,000, more preferably 2,000 to 100,000 in terms of weight average molecular weight, in consideration of solubility in alkaline aqueous solutions or the balance between photosensitivity and physical properties of the cured film. The (A) phenolic resin of this embodiment is preferably a mixture of at least one phenolic resin selected from the phenolic resin having a repeating unit represented by the general formula (7) and the phenolic resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms (hereinafter referred to as the (a3) resin) and a phenolic resin selected from novolac and polyhydroxystyrene (hereinafter referred to as the (a4) resin). The mixing ratio of the (a3) resin to the (a4) resin is in the range of (a3)/(a4) = 5/95 to 95/5 in terms of mass ratio. The mixing ratio is preferably (a3)/(a4)=5/95 to 95/5, more preferably (a3)/(a4)=10/90 to 90/10, and further preferably (a3)/(a4)=15/85 to 85/15 from the viewpoint of solubility in alkaline aqueous solution, sensitivity and resolution when forming an anti-corrosion pattern, residual stress of the cured film, and suitability for reflow treatment. As for the novolac and polyhydroxystyrene as the above-mentioned (a4) resin, the same resins as those shown in the above-mentioned (novolac) and (polyhydroxystyrene) can be used. (B) Cyclic compound having a carbonyl group The (B) compound is at least one compound selected from the group consisting of the following compounds, which is a cyclic compound having two or more carbonyl groups, wherein the carbonyl groups are directly bonded to the cyclic structure, and in the case of a monocyclic compound, more than 1/3 of the atoms forming the cyclic structure are N atoms, and in the case of a condensed cyclic compound, more than 1/3 of the atoms forming the cyclic structure having the carbonyl group are N atoms. From the viewpoint of migration resistance, it is preferred to use at least one compound selected from the group consisting of the following compounds classified according to the ring structure, that is, a 5-membered ring compound, a 6-membered ring compound, a 5-membered ring and a 5-membered ring condensed ring compound, a 5-membered ring and a 6-membered ring condensed ring compound, and a 6-membered ring and a 6-membered ring condensed ring compound. By having two or more carbonyl groups, the area of the void on the copper surface can be reduced. Furthermore, from the viewpoints of developing property or sensitivity, in-plane uniformity after curing, and elongation after reflow soldering, it is also preferred to have two or more carbonyl groups. When there are two or more carbonyl groups, the area of the void on the copper surface is significantly reduced compared to the case where there is one carbonyl group. In addition, from the viewpoints of developing property or sensitivity, in-plane uniformity after curing, elongation after reflow soldering, etc., the case where there are two or more carbonyl groups is superior to the case where there is only one carbonyl group. Specific examples of the compound (B) include 5-membered ring compounds: 3-pyrazolone, 5-pyrazolone, 3-methyl-5-pyrazolone, 1,3-dimethyl-5-pyrazolone, 2-imidazolidinone, 1,3-dimethyl-2-imidazolidinone, hydantoin, allantoin, parabanic acid, As the 6-membered ring compound, there are tetrahydro-2-pyrimidone, barbituric acid, 1,3-dimethylbarbituric acid, 1,3-dicyclohexylbarbituric acid, 5-aminobarbituric acid (uramil), uracil, cyanuric acid, isocyanuric acid tris (2-hydroxyethyl) ester, etc. As the condensed ring compound of 5-membered ring and 5-membered ring, there are glycoluril, etc. As the condensed ring compound of 6-membered ring and 5-membered ring, there are guanine, isoguanine, N-methylguanine, 7-(2-hydroxyethyl)guanine, N-(3-chlorophenyl)guanidine, )guanine, N-(3-ethylphenyl)guanine, hypoxanthine, 8-aza hypoxanthine, 7-deaza hypoxanthine, xanthine, 1-methylxanthine, 3-methylxanthine, 8-bromo-3-methylxanthine, theobromine, theophylline, 7-(2-chloroethyl) theophylline, caffeine, uric acid, 8-aza xanthine, etc., as 6-membered ring and 6-membered ring condensed cyclic compounds, there can be listed: pterin, dihydropteridine, 7,8-dimethyl pyrrolidone, 1,4-dihydro-6-methylquinoline-2,3-dione, etc., and mixtures thereof can also be listed. Among them, it is preferred to use condensed cyclic compounds. Furthermore, from the viewpoint of migration resistance, the compound (B) is preferably selected from the following general formula (60): A compound represented by {wherein, Rs3, Rs4 and Rs5 are independently a hydrogen atom, a halogen atom, a hydroxyl group, an amine group which may be substituted by an aromatic group, an alkoxy group having 1 to 6 carbon atoms, a hydroxyalkyl group or an alkyl group having 1 to 10 carbon atoms or an aromatic group}, the following general formula (61): [Chemical 49] A compound represented by {wherein, Rs6, Rs7 and Rs8 are independently a hydrogen atom, a halogen atom, a hydroxyl group, an amine group which may be substituted by an aromatic group, an alkoxy group having 1 to 6 carbon atoms, a hydroxyl alkyl group or an alkyl group having 1 to 10 carbon atoms or an aromatic group}, the following general formula (62): [Chemical 50] A compound represented by {wherein, Rs9, Rs10, Rs11 and Rs12 are independently a hydrogen atom, a halogen atom, a hydroxyl group, an amine group which may be substituted by an aromatic group, an alkoxy group having 1 to 6 carbon atoms, a hydroxyl alkyl group or an alkyl group having 1 to 10 carbon atoms or an aromatic group}, the following general formula (63): [Chemical 51] {In the formula, R _{twenty one} , R _{twenty two} , R _{twenty three} and R _{twenty four} At least one compound selected from the group consisting of compounds represented by {a hydrogen atom, a halogen atom, a hydroxyl group, an amine group which may be substituted by an aromatic group, an alkoxy group having 1 to 6 carbon atoms, a hydroxylalkyl group, or an alkyl group having 1 to 10 carbon atoms or an aromatic group}. Specific examples of the compounds represented by the general formulas (60) to (63) include xanthine, 1-methylxanthine, 3-methylxanthine, theobromine, theophylline, caffeine, uric acid, 8-azaxanthine, dioxotetrahydropteridine, and the like, and their derivatives. The amount of the compound (B) to be added is 0.01 to 10 parts by mass, preferably 0.05 to 2 parts by mass, relative to 100 parts by mass of the resin (A). From the viewpoint of migration resistance, it is preferably 0.01 parts by mass or more, and from the viewpoint of solubility, it is preferably less than 10 parts by mass. It is believed that the (B) component coordinates with copper through the carbonyl group or the nitrogen atom contained in the ring structure to change the surface state of copper, thereby inhibiting the migration of copper during the high-temperature storage test. It is believed that in the case of condensed rings, the migration resistance is improved by the synergistic effect of multiple carbonyl groups and nitrogen atoms. (C) Photosensitive agent The (C) photosensitive agent used in the present invention is described. The (C) photosensitive agent may be different depending on the photosensitive resin composition of the present invention, for example, mainly using polyimide precursors and/or polyamide as the negative type of the (A) resin, or mainly using at least one of polyazole precursors, soluble polyimide and phenol resin as the positive type of the (A) resin. The amount of the (C) photosensitive agent blended in the photosensitive resin composition is 1 to 50 parts by mass relative to 100 parts by mass of the (A) resin. The above blending amount is 1 part by mass or more from the viewpoint of photosensitivity or patterning properties, and is 50 parts by mass or less from the viewpoint of the curability of the photosensitive resin composition or the physical properties of the photosensitive resin layer after curing. [(C) Negative photosensitive agent: photopolymerization initiator and/or photoacid generator] First, the case where a negative type is desired is described. In this case, a photopolymerization initiator and/or a photoacid generator is used as the (C) photosensitive agent. The photopolymerization initiator is preferably a photoradical polymerization initiator, preferably a benzophenone derivative such as benzophenone, methyl o-benzoylbenzoate, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, fluorenone, etc., acetophenone derivatives such as 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone, 1-hydroxycyclohexylphenyl ketone, 9-oxosulfuron , 2-methyl 9-oxosulfuron , 2-isopropyl 9-oxysulfide , diethyl 9-oxysulfide 9-Oxysulfuron derivatives, benzoyl derivatives such as benzoyl dimethyl ketal and benzoyl-β-methoxyethyl acetal, benzoin derivatives such as benzoin and benzoin methyl ether, 1-phenyl-1,2-butanedione-2-(o-methoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-methoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-benzoyl)oxime, 1,3-diphenylpropanetrione Oxime such as oxime, 1-phenyl-3-ethoxypropanetrione-2-(o-phenylformyl)oxime, N-arylglycine such as N-phenylglycine, peroxide such as benzoyl perchloride, aromatic biimidazole, titanium cyclopentadienyl, photoacid generator such as α-(n-octylsulfonyloxyimino)-4-methoxybenzyl cyanide, etc., but not limited to them. Among the above-mentioned photopolymerization initiators, oximes are more preferred in terms of photosensitivity. When a photoacid generator is used as the (C) photosensitive agent in a negative photosensitive resin composition, it becomes acidic under irradiation with active light such as ultraviolet light, and has the function of crosslinking the crosslinking agent described below with the resin as the (A) component or polymerizing the crosslinking agents with each other. As examples of the photoacid generator, diaryl coronium salts, triaryl coronium salts, dialkyl benzyl methyl coronium salts, diaryl iodonium salts, aryl diazonium salts, aromatic tetracarboxylic acid esters, aromatic sulfonic acid esters, nitrobenzyl esters, oxime sulfonic acid esters, aromatic N-oxy acylimide sulfonic acid esters, aromatic sulfonamides, halogen alkyl-containing hydrocarbon compounds, halogen alkyl-containing heterocyclic compounds, naphthoquinone diazide-4-sulfonic acid esters, etc. can be used. Two or more of these compounds can be used in combination as needed, or in combination with other sensitizers. Among the above-mentioned photoacid generators, aromatic oxime sulfonic acid esters and aromatic N-oxy acylimide sulfonic acid esters are more preferred in terms of photosensitivity. The amount of the photosensitive agent to be added is 1 to 50 parts by mass relative to 100 parts by mass of the (A) resin, and preferably 2 to 15 parts by mass from the viewpoint of photosensitivity characteristics. By adding 1 part by mass or more of the (C) photosensitive agent relative to 100 parts by mass of the (A) resin, the photosensitivity is excellent, and by adding 50 parts by mass or less, the thick film curing property is excellent. Furthermore, as described above, when the (A) resin represented by the general formula (1) is an ionic bond type, a (meth) acrylic compound having an amino group is used in order to impart a photopolymerizable group to the side chain of the (A) resin via an ionic bond. In this case, a (meth)acrylic compound having an amino group is used as the (C) photosensitive agent, and as described above, for example, dialkylaminoalkyl acrylates or dialkylaminoalkyl methacrylates such as dimethylaminoethyl acrylate, dimethylaminoethyl methacrylate, diethylaminoethyl acrylate, diethylaminoethyl methacrylate, dimethylaminopropyl acrylate, dimethylaminopropyl methacrylate, diethylaminopropyl acrylate, diethylaminopropyl methacrylate, dimethylaminobutyl acrylate, dimethylaminobutyl methacrylate, diethylaminobutyl acrylate, and diethylaminobutyl methacrylate are preferred. Among them, from the viewpoint of photosensitivity, dialkylaminoalkyl acrylates or dialkylaminoalkyl methacrylates in which the carbon number of the alkyl group on the amino group is 1 to 10 and the carbon number of the alkyl chain is 1 to 10 are preferred. The amount of the (meth)acrylic compound having an amino group to be added is 1 to 20 parts by mass relative to 100 parts by mass of the (A) resin. From the perspective of photosensitivity characteristics, it is preferably 2 to 15 parts by mass. By adding 1 part by mass or more of the (meth)acrylic compound having an amino group relative to 100 parts by mass of the (A) resin as the (C) photosensitive agent, the photosensitivity is excellent, and by adding 20 parts by mass or less, the thick film curing property is excellent. Next, the case where a positive type is desired is explained. In this case, a photoacid generator is used as the (C) photosensitive agent. Specifically, a diazoquinone compound, an onium salt, a halogen-containing compound, etc. can be used. From the perspective of solvent solubility and storage stability, a compound having a diazoquinone structure is preferred. [(C) Positive photosensitive agent: Compounds having a quinonediazide group] Examples of (C) compounds having a quinonediazide group (hereinafter also referred to as "(C) quinonediazide compounds") include compounds having a 1,2-benzoquinonediazide structure and compounds having a 1,2-naphthoquinonediazide structure, which are known substances in U.S. Patent No. 2,772,972, U.S. Patent No. 2,797,213, and U.S. Patent No. 3,669,658. The (C) quinone diazide compound is preferably at least one compound selected from the group consisting of 1,2-naphthoquinone diazide-4-sulfonate of a polyhydroxy compound having a specific structure described in detail below and 1,2-naphthoquinone diazide-5-sulfonate of the polyhydroxy compound (hereinafter also referred to as "NQD compound"). The NQD compound is obtained by the following method: according to a conventional method, a naphthoquinone diazide sulfonic acid compound is subjected to sulfonyl chlorination using chlorosulfonic acid or sulfinyl chloride, and the obtained naphthoquinone diazide sulfonyl chloride is subjected to a condensation reaction with the polyhydroxy compound. For example, it can be obtained by the following method: a polyhydroxy compound is reacted with a specific amount of 1,2-naphthoquinonediazide-5-sulfonyl chloride or 1,2-naphthoquinonediazide-4-sulfonyl chloride in a solvent such as dioxane, acetone or tetrahydrofuran in the presence of an alkaline catalyst such as triethylamine to carry out esterification, and the obtained product is washed with water and dried. In this embodiment, from the viewpoint of sensitivity and resolution when forming an anti-corrosion pattern, the compound (C) having a quinonediazide group is preferably a 1,2-naphthoquinonediazide-4-sulfonate and/or a 1,2-naphthoquinonediazide-5-sulfonate of a hydroxy compound represented by the following general formula (70) to (74). General formula (70) is [Chemical 52] {Where X ₁₁ and X ₁₂ Each of X and X independently represents a hydrogen atom or a monovalent organic group having 1 to 60 carbon atoms (preferably 1 to 30 carbon atoms). ₁₃ and X ₁₄ Each independently represents a hydrogen atom or a monovalent organic group having 1 to 60 carbon atoms (preferably 1 to 30 carbon atoms), r1, r2, r3 and r4 are each independently an integer of 0 to 5, at least one of r3 and r4 is an integer of 1 to 5, (r1+r3)≦5, and (r2+r4)≦5}. The general formula (71) is represented by [Chem. 53] {wherein, Z represents a tetravalent organic group having 1 to 20 carbon atoms, X ₁₅ , X ₁₆ , X ₁₇ and X ₁₈ Each of the following independently represents a monovalent organic group having 1 to 30 carbon atoms; R6 is an integer of 0 or 1; R5, R7, R8 and R9 are each an integer of 0 to 3; R10, R11, R12 and R13 are each an integer of 0 to 2; and R10, R11, R12 and R13 are not all 0}. And the general formula (72) is represented by [Chem. 54] {wherein, r14 represents an integer of 1 to 5, r15 represents an integer of 3 to 8, (r14×r15) Ls each independently represent a monovalent organic group having 1 to 20 carbon atoms, (r15) T ¹ and (r15) T ² Each independently represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. And the general formula (73) is represented by [Chem. 55] {wherein, A represents an aliphatic divalent organic group containing tertiary or quaternary carbon, and M represents a divalent organic group, preferably selected from the following chemical formulas: [Chemical 56] The divalent group among the three groups represented by } is represented. Furthermore, the general formula (74) is represented by [Chem. 57] {wherein, r17, r18, r19 and r20 are independently integers of 0 to 2, at least one of r17, r18, r19 and r20 is 1 or 2, X ₂₀ ~X ₂₉ each independently represents a hydrogen atom, a halogen atom, a monovalent group selected from the group consisting of an alkyl group, an alkenyl group, an alkoxy group, an allyl group, and an acyl group, and Y ₁₀ , Y ₁₁ and Y ₁₂ Indicates single keys independently, select from -O-, -S-, -SO-, -SO ₂ -、-CO-、-CO ₂ -, cyclopentylene, cyclohexylene, phenylene, and a divalent organic group having 1 to 20 carbon atoms}. In another embodiment, in the above general formula (74), Y ₁₀ ~Y ₁₂ Preferably, they are independently selected from the following general formula: [Chemistry 59] [Chemistry 60] {Wherein, X ₃₀ and X ₃₁ X represents independently a hydrogen atom, at least one monovalent group selected from the group consisting of an alkyl group, an alkenyl group, an aryl group, and a substituted aryl group, ₃₂ , X ₃₃ , X ₃₄ and X ₃₅ Each independently represents a hydrogen atom or an alkyl group, r21 is an integer from 1 to 5, and X ₃₆ , X ₃₇ , X ₃₈ and X ₃₉ Each independently represents a hydrogen atom or an alkyl group} and is selected from three divalent organic groups. As the compound represented by the above general formula (70), hydroxyl compounds represented by the following formulas (75) to (79) can be cited. Here, the general formula (75) is [Chem. 61] {where r16 is an integer between 0 and 2, and X ₄₀ Each independently represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ₄₀ If there are multiple Xs, ₄₀ may be the same or different from each other, and X ₄₀ Preferably, it is the following general formula: (In the formula, r18 is an integer from 0 to 2, X ₄₁ represents a hydrogen atom, a monovalent organic group selected from the group consisting of an alkyl group and a cycloalkyl group, and when r18 is 2, two X ₄₁ (which may be the same or different) represented by a monovalent organic group}, the general formula (76) is [Chem. 63] {Wherein, X ₄₂ represents a hydrogen atom, a monovalent organic group selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, and a cycloalkyl group having 1 to 20 carbon atoms. Also, the general formula (77) is [Chem. 64] {In the formula, r19 is an integer from 0 to 2, X ₄₃ Each independently represents a hydrogen atom or the following general formula: (In the formula, r20 is an integer from 0 to 2, X ₄₅ is selected from the group consisting of a hydrogen atom, an alkyl group and a cycloalkyl group, and when r20 is 2, 2 X ₄₅ may be the same as or different from each other) and X ₄₄ is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, and a cycloalkyl group having 1 to 20 carbon atoms. Formulas (78) and (79) are the following structures. [Chemistry 67] As the compound represented by the general formula (70), the hydroxyl compounds represented by the following formulas (80) to (82) are preferred in terms of high sensitivity when preparing NQD compounds and low precipitation in the photosensitive resin composition. The structures of formulas (80) to (82) are shown below. [Chemistry 68] [Chemistry 69] [Chemistry 70] The compound represented by the general formula (76) is preferably the following formula (83) in terms of high sensitivity when preparing NQD compounds and low precipitation in the photosensitive resin composition: As the compound represented by the general formula (77), the hydroxyl compound represented by the following formula (84) to (86) is preferred in terms of high sensitivity when preparing NQD compounds and low precipitation in the photosensitive resin composition. The structures of formula (84) to (86) are shown below. [Chemical 72] [Chemistry 73] [Chemistry 74] In the above general formula (71), Z is not particularly limited as long as it is a tetravalent organic group having 1 to 20 carbon atoms. From the viewpoint of sensitivity, it is preferably a group having the following formula: Among the compounds represented by the general formula (71), the hydroxyl compounds represented by the following formulas (87) to (90) are preferred in terms of high sensitivity when preparing NQD compounds and low precipitation in photosensitive resin compositions. The structures of formulas (87) to (90) are shown below. [Chemistry 76] [Chemistry 77] [Chemistry 78] [Chemistry 79] The compound represented by the general formula (72) is preferably the following formula (91) in terms of high sensitivity when preparing NQD compounds and low precipitation in the photosensitive resin composition: [Chemical 80] {wherein, r40 is independently an integer of 0 to 9}. As the compound represented by the general formula (73), the hydroxyl compound represented by the following formula (92) and (93) is preferred in terms of high sensitivity when preparing NQD compounds and low precipitation in the photosensitive resin composition. The structures of formula (92) and (93) are shown below. [Chemical 81] [Chemistry 82] The compound represented by the general formula (74) is preferably the following formula (94) in terms of high sensitivity and low precipitation in the photosensitive resin composition: [Chemical 83] NQD compound of the polyhydroxy compound represented. In the case where the compound having a quinonediazide group (C) has a 1,2-naphthoquinonediazidesulfonyl group, the group may be either a 1,2-naphthoquinonediazide-5-sulfonyl group or a 1,2-naphthoquinonediazide-4-sulfonyl group. The 1,2-naphthoquinonediazide-4-sulfonyl group can absorb the i-ray region of a mercury lamp and is therefore suitable for exposure using i-rays. On the other hand, the 1,2-naphthoquinonediazide-5-sulfonyl group can absorb even the g-ray region of a mercury lamp and is therefore suitable for exposure using g-rays. In this embodiment, it is preferred to select one or both of the 1,2-naphthoquinonediazide-4-sulfonate compound and the 1,2-naphthoquinonediazide-5-sulfonate compound according to the wavelength for exposure. In addition, a 1,2-naphthoquinonediazide-4-sulfonate compound having a 1,2-naphthoquinonediazide-5-sulfonyl group in the same molecule may be used, and a 1,2-naphthoquinonediazide-4-sulfonate compound and a 1,2-naphthoquinonediazide-5-sulfonate compound may be mixed for use. (C) Among compounds having a quinone diazide group, the average esterification rate of naphthoquinone diazide sulfonyl ester of the hydroxyl compound is preferably 10% to 100% from the viewpoint of development contrast, and more preferably 20% to 100%. From the viewpoint of cured film properties such as sensitivity and elongation, preferred examples of NQD compounds include those represented by the following general formula group. [Chemical 84] It can be enumerated as {wherein Q is a hydrogen atom, or the following formula group: [Chemical 85] In this case, as the NQD compound, a naphthoquinone diazide sulfonyl ester compound having a 4-naphthoquinone diazide sulfonyl group and a 5-naphthoquinone diazide sulfonyl group in the same molecule can be used, and a 4-naphthoquinone diazide sulfonyl ester compound and a 5-naphthoquinone diazide sulfonyl ester compound can also be used in combination. Among the naphthoquinone diazide sulfonyl ester groups described in the above paragraph [0196], the following general formula (95) is particularly preferred: [Chemical 86] As the above-mentioned onium salt, there can be listed: iodonium salt, coronium salt, ホシホニウム salt, phosphonium salt, ammonium salt and diazonium salt, etc., preferably an onium salt selected from the group consisting of diaryl iodonium salt, triaryl coronium salt and trialkyl coronium salt. As the above-mentioned halogen-containing compound, there can be listed halogen alkyl-containing hydrocarbon compounds, etc., preferably trichloromethyl trisulphonium. The amount of the photoacid generator is 1 to 50 parts by mass, preferably 5 to 30 parts by mass, relative to 100 parts by mass of the resin (A). If the amount of the photoacid generator as the (C) photosensitive agent is 1 part by mass or more, the patterning property of the photosensitive resin composition is good. If it is 50 parts by mass or less, the tensile elongation of the film after curing of the photosensitive resin composition is good, and there is less development residue (scum) in the exposed part. The above-mentioned NQD compounds can be used alone or in combination of two or more. In this embodiment, the amount of the (C) compound having a quinonediazide group in the photosensitive resin composition is 0.1 parts by mass to 70 parts by mass, preferably 1 parts by mass to 40 parts by mass, more preferably 3 parts by mass to 30 parts by mass, and further preferably 5 parts by mass to 30 parts by mass, relative to 100 parts by mass of the (A) resin. If the amount is 0.1 parts by mass or more, good sensitivity is obtained. On the other hand, if it is 70 parts by mass or less, the mechanical properties of the cured film are good. The photosensitive resin composition of the present invention may further contain components other than the above-mentioned components (A) to (C). The preferred components vary depending on whether the (A) resin is a negative type such as a polyimide precursor and a polyamide or a positive type such as a polyazole precursor and a soluble polyimide. The above-mentioned polyimide precursor resin composition and polyamide resin composition as negative resin compositions, or the polyazole resin composition, soluble polyimide resin composition and phenol resin composition as positive photosensitive resin compositions in this embodiment may contain a solvent for dissolving the resins. Examples of the solvent include amides, sulfoxides, ureas, ketones, esters, lactones, ethers, halogenated hydrocarbons, hydrocarbons, alcohols, and the like. For example, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethylsulfoxide, tetramethylurea, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, oxalic acid, and the like can be used. Diethyl ester, ethyl lactate, methyl lactate, butyl lactate, γ-butyrolactone, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, benzyl alcohol, phenylene glycol, tetrahydrofuran methanol, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran, phenoxyethanol, dichloromethane, 1,2-dichloroethane, 1,4-dichlorobutane, chlorobenzene, o-dichlorobenzene, anisole, hexane, heptane, benzene, toluene, xylene, mesitylene, etc. Among them, from the viewpoint of resin solubility, stability of resin composition, and adhesion to substrate, preferred are N-methyl-2-pyrrolidone, dimethyl sulfoxide, tetramethyl urea, butyl acetate, ethyl lactate, γ-butyrolactone, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, diethylene glycol dimethyl ether, benzyl alcohol, phenylene glycol, and tetrahydrofuran methanol. Among such solvents, those that can completely dissolve the generated polymer are particularly preferred, such as N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethyl sulfoxide, tetramethyl urea, γ-butyrolactone, etc. Examples of solvents suitable for the above-mentioned phenolic resin include: bis(2-methoxyethyl) ether, methyl solvent, ethyl solvent, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, cyclopentanone, toluene, xylene, γ-butyrolactone, N-methyl-2-pyrrolidone, etc. In the photosensitive resin composition of the present invention, the amount of the solvent used is preferably 100 to 1000 parts by mass, more preferably 120 to 700 parts by mass, and further preferably 125 to 500 parts by mass relative to 100 parts by mass of the (A) resin. The photosensitive resin composition of the present invention may further contain components other than the above-mentioned (A) to (C) components. For example, when the photosensitive resin composition of the present invention is used to form a cured film on a substrate containing copper or a copper alloy, nitrogen-containing heterocyclic compounds such as azole compounds and purine derivatives can be optionally formulated to suppress discoloration on the copper. Examples of azole compounds include 1H-triazole, 5-methyl-1H-triazole, 5-ethyl-1H-triazole, 4,5-dimethyl-1H-triazole, 5-phenyl-1H-triazole, 4-tert-butyl-5-phenyl-1H-triazole, 5-hydroxyphenyl-1H-triazole, phenyltriazole, p-ethoxyphenyltriazole, 5-phenyl-1-(2-dimethylaminoethyl)triazole, 5-benzyl-1H-triazole, hydroxyphenyltriazole, 1,5-dimethyltriazole, 4,5-diethyl-1H-triazole, 1H-benzotriazole, 2-(5-methyl-2-hydroxyphenyl)benzotriazole, 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl] ]-benzotriazole, 2-(3,5-di-tert-butyl-2-hydroxyphenyl)benzotriazole, 2-(3-tert-butyl-5-methyl-2-hydroxyphenyl)-benzotriazole, 2-(3,5-di-tert-pentyl-2-hydroxyphenyl)benzotriazole, 2-(2'-hydroxy-5'-tert-octylphenyl)benzotriazole, hydroxyphenylbenzotriazole, tolyltriazole, 5-methyl-1H-benzotriazole, 4-methyl-1H-benzotriazole, 4-carboxyl-1H-benzotriazole, 5-carboxyl-1H-benzotriazole, 1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, 5-amino-1H-tetrazole, 1-methyl-1H-tetrazole, and the like. Preferred examples include tolyltriazole, 5-methyl-1H-benzotriazole, and 4-methyl-1H-benzotriazole. In addition, the azole compounds may be used alone or in the form of a mixture of two or more. Specific examples of purine derivatives include purine, adenine, guanine, hypoxanthine, xanthine, theobromine, caffeine, uric acid, isoguanine, 2,6-diaminopurine, 9-methyladenine, 2-hydroxyadenine, 2-methyladenine, 1-methyladenine, N-methyladenine, N,N-dimethyladenine, 2-fluoroadenine, 9-(2-hydroxyethyl)adenine, guanine oxime, N-(2-hydroxyethyl)adenine, 8-aminopurine, adenine, 6-amino-8-phenyl-9H-purine, 1-ethyladenine, 6-ethylaminopurine, 1-benzyladenine, N-methylguanine, 7-(2-hydroxyethyl)guanine, N-(3-chlorophenyl)guanine, N-(3-ethylphenyl)guanine, 2-azaadenine, 5-azaadenine, 8-azaadenine, 8-azaguanine, 8-azapurine, 8-azaxanthine, 8-azahypoxanthine, etc. and their derivatives. When the photosensitive resin composition of the present invention contains the above-mentioned azole compound or purine derivative, the amount thereof is preferably 0.1 to 20 parts by weight relative to 100 parts by weight of the resin (A), and more preferably 0.5 to 5 parts by weight from the viewpoint of photosensitivity characteristics. If the amount of the azole compound relative to 100 parts by weight of the resin (A) is 0.1 parts by weight or more, when the photosensitive resin composition of the present invention is formed on copper or a copper alloy, discoloration of the surface of the copper or copper alloy is suppressed. On the other hand, if the amount is 20 parts by weight or less, excellent photosensitivity is obtained. In addition, a hindered phenol compound may be optionally added to suppress discoloration on the copper surface. As hindered phenol compounds, there are 2,6-di-tert-butyl-4-methylphenol, 2,5-di-tert-butyl-hydroquinone, octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl) propionate, isooctyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl) propionate, 4,4'-methylenebis(2,6-di-tert-butylphenol), 4,4'-thio-bis(3-methyl-6-tert-butylphenol), 4,4'-butylene-bis(3-methyl-6-tert-butylphenol), triethylene glycol-bis[3-( 3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], 1,6-hexanediol-bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], 2,2-thio-diethylenebis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], N,N'-hexamethylenebis(3,5-di-tert-butyl-4-hydroxy-phenylpropionamide), 2,2'-methylene-bis(4-methyl-6-tert-butylphenol), 2,2'-methylene-bis(4-ethyl-6-tert-butylphenol), Pentaerythritol tetrakis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, tris-(3,5-di-tert-butyl-4-hydroxybenzyl) isocyanurate, 1,3,5-trimethyl-2,4,6-tris(3,5-di-tert-butyl-4-hydroxybenzyl)benzene, 1,3,5-tris(3-hydroxy-2,6-dimethyl-4-isopropylbenzyl)-1,3,5-tris(2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-tert-butyl- 1,3,5-tris[4-(1-ethylpropyl)-3-hydroxy-2,6-dimethylbenzyl]-1,3,5-tris[2,4,6-(1H,3H,5H)-trione ... 1,3,5-Tris[4-triethylmethyl-3-hydroxy-2,6-dimethylbenzyl]-1,3,5-trisin-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(3-hydroxy-2,6-dimethyl-4-phenylbenzyl)-1,3,5-trisin-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-tert-butyl-3-hydroxy-2,5,6-trimethylbenzyl)-1,3,5-trisin-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-tert-butyl-5-ethyl-3-hydroxy-2,6-dimethylbenzyl)-1, 3,5-Tris(4-tert-butyl-6-ethyl-3-hydroxy-2-methylbenzyl)-1,3,5-tris(4-tert-butyl-6-ethyl-3-hydroxy-2-methylbenzyl)-1,3,5-tris(4-tert-butyl-6-ethyl-3-hydroxy-2,5-dimethylbenzyl)-1,3,5-tris(4-tert-butyl-6-ethyl-3-hydroxy-2,5-dimethylbenzyl)-1,3,5-tris(4-tert-butyl-5,6-diethyl-3-hydroxy-2-methylbenzyl)-1,3,5-tris(4-tert-butyl-5,6-diethyl-3-hydroxy-2-methylbenzyl)-1,3,5-tris(4-tert-butyl-2,4,6-(1H,3H,5H)-trione 1,3,5-tris(4-tert-butyl-3-hydroxy-2-methylbenzyl)-1,3,5-tris(2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-tert-butyl-3-hydroxy-2,5-dimethylbenzyl)-1,3,5-tris(2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-tert-butyl-5-ethyl-3-hydroxy-2-methylbenzyl)-1,3,5-tris(2,4,6-(1H,3H,5H)-trione, etc., but are not limited thereto. Among them, 1,3,5-tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-trioxathia-2,4,6-(1H,3H,5H)-trione and the like are particularly preferred. The amount of the hindered phenol compound to be added is preferably 0.1 to 20 parts by weight relative to 100 parts by weight of the resin (A), and more preferably 0.5 to 10 parts by weight from the viewpoint of photosensitivity characteristics. If the amount of the hindered phenol compound to be added is 0.1 parts by weight or more relative to 100 parts by weight of the resin (A), for example, when the photosensitive resin composition of the present invention is formed on copper or a copper alloy, discoloration or corrosion of the copper or a copper alloy can be prevented. On the other hand, if the amount is 20 parts by weight or less, excellent photosensitivity can be achieved. The photosensitive resin composition of the present invention may also contain a crosslinking agent. The crosslinking agent may be a crosslinking agent that can crosslink the resin (A) or form a crosslinked network structure when the relief pattern formed using the photosensitive resin composition of the present invention is heated and cured. The crosslinking agent can further enhance the heat resistance and chemical resistance of the cured film formed by the photosensitive resin composition. As the crosslinking agent, for example, there can be mentioned: Cymel (registered trademark) 300, 301, 303, 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158, 1123, 1170, 1174, UFR 65, 300, Micoat 102, 105 (all manufactured by Mitsui Cytec); NIKALAC (registered trademark) MX-270, -280, -290, NIKALAC MS-11, NIKALAC MW-30, -100, -300, -390, -750 (all manufactured by SANWA CHEMICAL Co., Ltd.); DML-OCHP, DML-MBPC, DML-BPC, DML-PEP, DML-34X, DML-PSBP, DML-PTBP, DML-PCHP, DML-POP, DML-PFP, DML-MBOC, BisCMP-F, DML-BisOC-Z, DML-BisOCHP-Z, DML-BisOC-P, DMOM-PTBT, TMOM-BP, TMOM-BPA, TML-BPAF-MF (all of the above are from Taiwan Chemical Industry Company); benzyl alcohol, bis(hydroxymethyl)cresol, bis(hydroxymethyl)dimethoxybenzene, bis(hydroxymethyl)diphenyl ether, bis(hydroxymethyl)benzophenone, hydroxymethylphenyl hydroxymethylbenzoate, bis(hydroxymethyl)biphenyl, dimethylbis(hydroxymethyl)biphenyl, bis(methoxymethyl)benzene, bis(methoxymethyl)cresol, bis(methoxymethyl)dimethoxybenzene, bis(methoxymethyl)diphenyl ether, bis(methoxymethyl)benzophenone, methoxymethylphenyl methoxymethylbenzoate, bis(methoxymethyl)biphenyl, dimethylbis(methoxymethyl)biphenyl, etc. In addition, the ethylene oxide compound may include phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol type epoxy resin, trisphenol type epoxy resin, tetraphenol type epoxy resin, phenol-xylyl type epoxy resin, naphthol-xylyl type epoxy resin, phenol-naphthol type epoxy resin, phenol-diphenylene type epoxy resin, Cyclopentadiene epoxy resin, alicyclic epoxy resin, aliphatic epoxy resin, diethylene glycol diglycidyl ether, sorbitol polyglycidyl ether, propylene glycol diglycidyl ether, trihydroxymethylpropane polyglycidyl ether, 1,1,2,2-tetra(p-hydroxyphenyl)ethane tetraglycidyl ether, glycerol triglycidyl ether, o-butylene glycol diglycidyl ether, phenyl glycidyl ether, 1,6-bis(2,3-epoxypropoxy)naphthalene, diglycerol polyglycidyl ether, polyethylene glycol glycidyl ether, YDB-340, YDB-412, YDF-2001, YDF-2004 (the above are trade names, manufactured by Nippon Steel Chemical Co., Ltd.), NC-3000-H, EPPN-501H, EOCN-1020, NC-7000L, EPPN-201L, XD-1000, EOCN-4600 (the above are trade names, manufactured by Nippon Kayaku Co., Ltd.), Epikote (registered trademark) 1001, Epikote 1007, Epikote 1009, Epikote 5050, Epikote 5051, Epikote 1031S, Epikote 180S65, Epikote 157H70, YX-315-75 (the above are trade names, manufactured by Japan Epoxy Resins Co., Ltd.), EHPE3150, PLACCEL G402, PUE101, PUE105 (the above are trade names, manufactured by Diacel Chemical Industries Co., Ltd.), EPICLON (registered trademark) 830, 850, 1050, N-680, N-690, N-695, N-770, HP-7200, HP-820, EXA-4850-1000 (the above are trade names, manufactured by DIC Corporation), DENACOL (registered trademark) EX-201, EX-251, EX-203, EX-313, EX-314, EX-321, EX-411, EX-511, EX-512, EX-612, EX-614, EX-614B, EX-711, EX-731, EX-810, EX-911, EM-150 (the above are trade names, manufactured by Nagase ChemteX Corporation), Epolight (registered trademark) 70P, Epolight 100MF (the above are trade names, manufactured by Kyoeisha Chemical Co., Ltd.), etc. In addition, as the isocyanate group-containing compound, there can be mentioned 4,4'-diphenylmethane diisocyanate, toluene diisocyanate, 1,3-xylylene diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate, Takenate (registered trademark) 500, 600, Cosmonate (registered trademark) NBDI, ND (the above are trade names, manufactured by Mitsui Chemicals Co., Ltd.), Duranate (registered trademark) 17B-60PX, TPA-B80E, MF-B60X, MF-K60X, E402-B80T (the above are trade names, manufactured by Asahi Kasei Chemicals Co., Ltd.), and the like. In addition, the bis-cis-butylenediamide compounds include 4,4'-diphenylmethane bis-cis-butylenediamide, phenylmethane bis-cis-butylenediamide, meta-phenyl bis-cis-butylenediamide, bisphenol A diphenyl ether bis-cis-butylenediamide, 3,3'-dimethyl-5,5'-diethyl-4 ,4'-diphenylmethane dicis-butylene diimide, 4-methyl-1,3-phenylene dicis-butylene diimide, 1,6'-dicis-butylene diimide-(2,2,4-trimethyl)hexane, 4,4'-diphenyl ether dicis-butylene diimide, 4,4'-diphenylsulfone dicis-butylene diimide imide, 1,3-bis(3-cis-butylenediimidephenoxy)benzene, 1,3-bis(4-cis-butylenediimidephenoxy)benzene, BMI-1000, BMI-1100, BMI-2000, BMI-2300, BMI-3000, BMI-4000, BMI-5100, BMI-7000, BMI-TMH, BMI-6000, BMI-8000 (these are trade names, manufactured by Yamato Chemical Industries, Ltd.), etc., but are not limited to these as long as they are compounds that are thermally crosslinked as described above. When a crosslinking agent is used, the amount of the crosslinking agent is preferably 0.5 to 20 parts by mass, more preferably 2 to 10 parts by mass, relative to 100 parts by mass of the resin (A). When the amount is 0.5 parts by mass or more, good heat resistance and chemical resistance are exhibited. On the other hand, when it is 20 parts by mass or less, excellent storage stability is achieved. The photosensitive resin composition of the present invention may also contain an organic titanium compound. By containing an organic titanium compound, a photosensitive resin layer with excellent chemical resistance can be formed even when cured at a low temperature of about 250°C. In addition, in particular, by making the photosensitive resin composition contain both (B) a cyclic compound having a carbonyl group and an organic titanium compound, the cured resin layer has not only excellent substrate adhesion but also excellent chemical resistance. As the organic titanium compound that can be used, there can be listed those in which an organic chemical substance is bonded to the titanium atom via a covalent bond or an ionic bond. Specific examples of the organic titanium compound are shown in the following I) to VII): I) Titanium chelate compound: Among them, in terms of the storage stability of the negative photosensitive resin composition and the acquisition of a good pattern, a titanium chelate having two or more alkoxy groups is more preferred, and specific examples are as follows: titanium bis(triethanolamine) diisopropoxide, titanium bis(2,4-pentanedioate) di-n-butanol, titanium bis(2,4-pentanedioate) diisopropoxide, titanium bis(tetramethylpimelic acid) diisopropoxide, titanium bis(ethylacetoacetic acid) diisopropoxide, etc. II) Tetraalkoxy titanium compounds: for example, titanium tetra(n-butanol), titanium tetraethanol, titanium tetra(2-ethylhexanol), titanium tetraisobutanol, titanium tetraisopropanol, titanium tetramethanol, titanium tetramethoxypropanol, titanium tetramethylphenol, titanium tetra(n-nonanol), titanium tetra(n-propanol), titanium tetrastearyl alcohol, titanium tetra[bis{2,2-(allyloxymethyl)butanol}], etc. III) Bis(cyclopentadienyl)titanium compounds: for example, titanium (pentamethylcyclopentadienyl)trimethol, bis(η ⁵ -2,4-cyclopentadien-1-yl)bis(2,6-difluorophenyl)titanium, bis(η ⁵ -2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium, etc. IV) Monoalkoxy titanium compounds: for example, tri(dioctyl phosphate) isopropyl titanium, tri(dodecylbenzenesulfonate) isopropyl titanium, etc. V) Oxytitanium compounds: for example, bis(glutaric acid)oxytitanium, bis(tetramethylpimelic acid)oxytitanium, phthalocyanineoxytitanium, etc. VI) Tetraacetylacetonate titanium compounds: for example, tetraacetylacetonate titanium, etc. VII) Titanium ester coupling agent: for example, tri(dodecylbenzenesulfonyl) titanium isopropyl ester, etc. Among them, from the viewpoint of showing better chemical resistance, the organic titanium compound is preferably at least one compound selected from the group consisting of I) titanium chelate compounds, II) tetraalkoxy titanium compounds and III) dioctenyl titanium compounds. Particularly preferred are titanium bis(ethylacetate) diisopropylate, titanium tetra(n-butylate), and bis(η-butylate). ⁵ -2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium. When the organic titanium compound is formulated, the formulation amount is preferably 0.05 to 10 parts by mass, and more preferably 0.1 to 2 parts by mass relative to 100 parts by mass of the (A) resin. When the formulation amount is 0.05 parts by mass or more, good heat resistance and chemical resistance are exhibited. On the other hand, when it is 10 parts by mass or less, excellent storage stability is achieved. Furthermore, in order to improve the adhesion between the film formed using the photosensitive resin composition of the present invention and the substrate, an adhesion aid can be arbitrarily formulated. As the bonding agent, there can be mentioned: γ-aminopropyl dimethoxysilane, N-(β-aminoethyl)-γ-aminopropyl methyl dimethoxysilane, γ-glycidyloxypropyl methyl dimethoxysilane, γ-butyl propyl methyl dimethoxysilane, 3-methacryloxypropyl dimethoxymethyl silane, 3-methacryloxypropyl trimethoxysilane, dimethoxymethyl-3-piperidinylpropyl silane, diethoxy-3-glycidyloxypropyl methyl silane, N-(3-diethoxymethylsilylpropyl)succinimide, N-[3-(triethoxysilyl)propyl]phthalic acid Silane coupling agents such as amine acid, benzophenone-3,3'-bis(N-[3-triethoxysilyl]propylamide)-4,4'-dicarboxylic acid, benzene-1,4-bis(N-[3-triethoxysilyl]propylamide)-2,5-dicarboxylic acid, 3-(triethoxysilyl)propyl succinic anhydride, N-phenylaminopropyl trimethoxysilane, 3-ureidopropyl trimethoxysilane, 3-ureidopropyl triethoxysilane, 3-(trialkoxysilyl)propyl succinic anhydride, and aluminum-based bonding agents such as tris(ethylacetoacetate)aluminum, tris(acetylacetonate)aluminum, and ethylaluminum diisopropyl acetoacetate. Among these bonding agents, silane coupling agents are more preferably used in terms of bonding strength. When the photosensitive resin composition contains a bonding agent, the amount of the bonding agent is preferably in the range of 0.5 to 25 parts by weight relative to 100 parts by weight of the (A) resin. Examples of silane coupling agents include: 3-butyl propyl trimethoxy silane (manufactured by Shin-Etsu Chemical Co., Ltd.: trade name KBM803, manufactured by Chisso Co., Ltd.: trade name Sila-Ace S810), 3-butylpropyltriethoxysilane (manufactured by Azmax Co., Ltd.: trade name SIM6475.0), 3-butylpropylmethyldimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.: trade name LS1375, manufactured by Azmax Co., Ltd.: trade name SIM6474.0), butylmethyltrimethoxysilane (manufactured by Azmax Co., Ltd.: trade name SIM6473.5C), butylmethylmethyldimethoxysilane (manufactured by Azmax Co., Ltd.: trade name SIM6473.0), 3-butylpropyldiethoxymethoxysilane, 3-butylpropylethoxydimethoxysilane, 3-Alkylpropyltripropoxysilane, 3-Alkylpropyldiethoxypropoxysilane, 3-Alkylpropylethoxydipropoxysilane, 3-Alkylpropyldimethoxypropoxysilane, 3-Alkylpropylmethoxydipropoxysilane, 2-Alkylethyltrimethoxysilane, 2-Alkylethyldiethoxymethoxysilane, 2-Alkylethylethoxy 2-Benzylethyltripropoxysilane, 2-Benzylethyltripropoxysilane, 2-Benzylethylethoxydipropoxysilane, 2-Benzylethyldimethoxypropoxysilane, 2-Benzylethylmethoxydipropoxysilane, 4-Benzylbutyltrimethoxysilane, 4-Benzylbutyltriethoxysilane, 4-Benzylbutyl Tripropoxysilane, N-(3-triethoxysilylpropyl)urea (Shin-Etsu Chemical Co., Ltd.: trade name LS3610, Azmax Co., Ltd.: trade name SIU9055.0), N-(3-trimethoxysilylpropyl)urea (Azmax Co., Ltd.: trade name SIU9058.0), N-(3-diethoxymethoxysilylpropyl)urea, N-(3-ethoxydimethoxysilylpropyl)urea, N-(3-tripropoxysilylpropyl)urea, N-(3-diethoxypropoxysilylpropyl)urea, N-(3-ethoxydipropoxysilylpropyl)urea, N-(3-dimethoxy 1-(3-methoxysilylpropyl)urea, N-(3-methoxydipropoxysilylpropyl)urea, N-(3-trimethoxysilylethyl)urea, N-(3-ethoxydimethoxysilylethyl)urea, N-(3-tripropoxysilylethyl)urea, N-(3-tripropoxysilylethyl)urea, N-(3-ethoxydipropoxysilylethyl)urea, N-(3-dimethoxypropoxysilylethyl)urea, N-(3-methoxydipropoxysilylethyl)urea, N-(3-trimethoxysilylbutyl)urea, N-(3-triethoxysilylbutyl)urea, N-(3-tripropoxysilylbutyl)urea, 3-(m-aminophenoxy)propyltrimethoxysilyl Oxysilane (Azmax Co., Ltd.: trade name SLA0598.0), m-aminophenyl trimethoxysilane (Azmax Co., Ltd.: trade name SLA0599.0), p-aminophenyl trimethoxysilane (Azmax Co., Ltd.: trade name SLA0599.1), aminophenyl trimethoxysilane (Azmax Co., Ltd.: trade name SLA0599.2), 2-(trimethoxysilylethyl)pyridine (Azmax Co., Ltd.: trade name SIT8396.0), 2-(triethoxysilylethyl)pyridine, 2-(dimethoxysilylmethylethyl)pyridine pyridine, 2-(diethoxysilylmethylethyl)pyridine, (3-triethoxysilylpropyl) tert-butyl carbamate, (3-glycidyloxypropyl) triethoxysilane, tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-isopropoxysilane, tetra-n-butoxysilane, tetra-isobutoxysilane, tetra-tert-butoxysilane, tetra(methoxyethoxysilane), tetra(methoxy-n-propoxysilane), tetra(ethoxyethoxysilane), tetra(methoxyethoxyethoxysilane), bis(trimethoxysilyl)ethane, bis(trimethoxysilyl)hexane, bis(triethoxysilyl)methane, bis(triethoxysilyl)ethane, bis(triethoxysilane ethylene, bis(triethoxysilyl)octane, bis(triethoxysilyl)octadiene, bis[3-(triethoxysilyl)propyl]disulfide, bis[3-(triethoxysilyl)propyl]tetrasulfide, di-tert-butoxydiethoxysilane, diisobutoxyaluminoxytriethoxysilane, bis(glutaric acid)titanium-O,O'- Bis(oxyethyl)-aminopropyl triethoxysilane, phenylsilanetriol, methylphenylsilanediol, ethylphenylsilanediol, n-propylphenylsilanediol, isopropylphenylsilanediol, n-butylphenylsilanediol, isobutylphenylsilanediol, tert-butylphenylsilanediol, diphenylsilanediol, dimethoxydiphenylsilane, dimethoxy Ethoxydiphenylsilane, dimethoxydi-p-tolylsilane, ethylmethylphenylsilanol, n-propylmethylphenylsilanol, isopropylmethylphenylsilanol, n-butylmethylphenylsilanol, isobutylmethylphenylsilanol, t-butylmethylphenylsilanol, ethyl-n-propylphenylsilanol, ethylisopropylphenylsilanol, n-butylethylphenylsilanol, isobutylethylphenylsilanol, t-butylethylphenylsilanol, methyldiphenylsilanol, ethyldiphenylsilanol, n-propyldiphenylsilanol, isopropyldiphenylsilanol, n-butyldiphenylsilanol, isobutyldiphenylsilanol, t-butyldiphenylsilanol, triphenylsilanol, and the like, but are not limited thereto. These may be used alone or in combination. As the silane coupling agent, among the above-mentioned silane coupling agents, preferred from the viewpoint of storage stability are phenylsilanetriol, trimethoxyphenylsilane, trimethoxy(p-tolyl)silane, diphenylsilanediol, dimethoxydiphenylsilane, diethoxydiphenylsilane, dimethoxydi-p-tolylsilane, triphenylsilanol, and the silane coupling agent represented by the following structure. [Chemical 87] When using a silane coupling agent, the amount thereof is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the (A) resin. The photosensitive resin composition of the present invention may further contain components other than the above components. The preferred component varies depending on whether the (A) resin is a negative type such as a polyimide precursor and a polyamide, or a positive type such as a polyazole precursor, a soluble polyimide and a phenolic resin. When a polyimide precursor or a polyamide is used as the negative type of the (A) resin, a sensitizer may be arbitrarily formulated to increase the photosensitivity. Examples of the sensitizer include michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzylidene)cyclopentane, 2,6-bis(4'-diethylaminobenzylidene)cyclohexanone, 2,6-bis(4'-diethylaminobenzylidene)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, p-dimethyl 1,3-Bis(4'-dimethylaminobenzylidene)acetone, 1,3-Bis(4'-diethylaminobenzylidene)acetone, 3,3'-carbonyl-bis(7-diethylaminobenzylidene)acetone, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)isonaphthothiazole, 1,3-bis(4'-dimethylaminobenzylidene)acetone, 1,3-bis(4' ... Aminocumarin), 3-acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, 3-ethoxycarbonyl-7-diethylaminocoumarin, N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, N-p-tolyldiethanolamine, N-phenylethanolamine, 4- isoamyl dimethylaminobenzoate, isoamyl diethylaminobenzoate, 2-benzimidazole, 1-phenyl-5-benzyltetrazol, 2-benzylthiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethylaminostyryl)benzothiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, 2-(p-dimethylaminobenzyl)styrene, etc. These can be used alone or in combination of 2 to 5. When the photosensitive resin composition contains a sensitizer for improving photosensitivity, the amount thereof is preferably 0.1 to 25 parts by weight relative to 100 parts by weight of the resin (A). In order to improve the resolution of the relief pattern, a monomer having an unsaturated bond that is photopolymerizable may be arbitrarily formulated. As such a monomer, a (meth) acrylic compound that undergoes a free radical polymerization reaction by a photopolymerization initiator is preferred, and is not particularly limited to the following, and may include: mono- or di-acrylates and methacrylates of ethylene glycol or polyethylene glycol such as diethylene glycol dimethacrylate and tetraethylene glycol dimethacrylate, mono- or di-acrylates and methacrylates of propylene glycol or polypropylene glycol, mono-, di- or tri-acrylates and methacrylates of glycerol, cyclohexane diacrylate and dimethacrylate, diacrylate and dimethacrylate of 1,4-butanediol, 1 , diacrylate and dimethacrylate of 6-hexanediol, diacrylate and dimethacrylate of neopentyl glycol, mono- or diacrylate and methacrylate of bisphenol A, benzyltrimethacrylate, isobutyl acrylate and isobutyl methacrylate, acrylamide and its derivatives, methacrylamide and its derivatives, trihydroxymethylpropane triacrylate and methacrylate, di- or triacrylate and methacrylate of glycerol, di-, tri- or tetraacrylate and methacrylate of pentaerythritol, and ethylene oxide or propylene oxide adducts of these compounds. When the photosensitive resin composition contains the above-mentioned monomer having a photopolymerizable unsaturated bond for improving the resolution of the relief pattern, the amount of the monomer having a photopolymerizable unsaturated bond is preferably 1 to 50 parts by weight relative to 100 parts by weight of the resin (A). In addition, when a polyimide precursor or the like is used as the negative of the resin (A), a thermal polymerization inhibitor may be optionally added in order to improve the stability of the viscosity and photosensitivity of the photosensitive resin composition when it is stored in a solution containing a solvent. As the thermal polymerization inhibitor, hydroquinone, N-nitrosodiphenylamine, p-tert-butylcatechol, phenothiocyanate, N-phenylnaphthylamine, ethylenediaminetetraacetic acid, 1,2-cyclohexanediaminetetraacetic acid, glycol ether diaminetetraacetic acid, 2,6-di-tert-butyl-p-methylphenol, 5-nitroso-8-hydroxyquinoline, 1-nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamino)phenol, N-nitroso-N-phenylhydroxylamine ammonium salt, N-nitroso-N(1-naphthyl)hydroxylamine ammonium salt, etc. can be used. When a thermal polymerization inhibitor is formulated in the photosensitive resin composition, the amount thereof is preferably in the range of 0.005 to 12 parts by mass relative to 100 parts by mass of the (A) resin. On the other hand, in the photosensitive resin composition of the present invention, when a polyazole precursor or the like is used as the positive type of the (A) resin, a dye, a surfactant, a thermal acid generator, a dissolution accelerator, a bonding aid for improving the adhesion to the substrate, etc. previously used as an additive for the photosensitive resin composition may be added as needed. <Dyes, surfactants, bonding aids> To explain the above additives in more detail, examples of dyes include methyl violet, crystal violet, malachite green, etc. In addition, examples of surfactants include non-ionic surfactants including polyglycols such as polypropylene glycol or polyoxyethylene lauryl ether or their derivatives, fluorine-based surfactants such as Fluorad (trade name, manufactured by Sumitomo 3M Co., Ltd.), MEGAFAC (trade name, manufactured by Dainippon Ink & Chemical Industry Co., Ltd.), and Lumiflon (trade name, manufactured by Asahi Glass Co., Ltd.), and organosilicone surfactants such as KP341 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.), DBE (trade name, manufactured by Chisso Co., Ltd.), and Glanol (trade name, manufactured by Kyoeisha Chemical Co., Ltd.). As the bonding aid, for example, there can be listed: alkyl imidazoline, butyric acid, alkyl acid, polyhydroxystyrene, polyvinyl methyl ether, tertiary butylphenol varnish, epoxy silane, epoxy polymer, etc., and various silane coupling agents. The amount of the above-mentioned dye and surfactant is preferably 0.1 to 30 parts by mass relative to 100 parts by mass of the (A) resin. In addition, from the perspective of showing good thermal and mechanical properties of the cured product even when the curing temperature is lowered, a thermal acid generator can be arbitrarily formulated. From the perspective of showing good thermal and mechanical properties of the cured product even when the curing temperature is lowered, it is preferred to formulate a thermal acid generator. As the thermal acid generator, there can be listed: onium salts having the function of generating an acid by heat, such as salts formed by a strong acid and a base, or amide sulfonate. As the onium salt, for example, there can be listed: aryldiazonium salts, diaryl iodine salts such as diphenyl iodine salt; di(alkylaryl) iodine salts such as di(tert-butylphenyl) iodine salt; trialkyl iodine salts such as trimethyl iodine salt; dialkyl monoaryl iodine salts such as dimethylphenyl iodine salt; diaryl monoalkyl iodine salts such as diphenylmethyl iodine salt; triaryl iodine salts, etc. Among them, preferred are di(tert-butylphenyl)iodonium p-toluenesulfonate, di(tert-butylphenyl)iodonium trifluoromethanesulfonate, trimethyl zirconia trifluoromethanesulfonate, dimethyl phenyl zirconia trifluoromethanesulfonate, diphenyl methyl zirconia trifluoromethanesulfonate, di(tert-butylphenyl)iodonium nonafluorobutanesulfonate, diphenyl zirconia camphorsulfonic acid, diphenyl zirconia ethanesulfonic acid, dimethyl phenyl zirconia benzenesulfonic acid, diphenyl methyl zirconia toluenesulfonic acid, etc. In addition, as the salt formed by a strong acid and a base, in addition to the above-mentioned onium salts, salts formed by the following strong acids and bases, such as pyridinium salts, can also be used. Examples of strong acids include arylsulfonic acids such as p-toluenesulfonic acid and benzenesulfonic acid, perfluoroalkylsulfonic acids such as camphorsulfonic acid, trifluoromethanesulfonic acid and nonafluorobutanesulfonic acid, and alkylsulfonic acids such as methanesulfonic acid, ethanesulfonic acid and butanesulfonic acid. Examples of bases include alkylpyridines such as pyridine and 2,4,6-trimethylpyridine, N-alkylpyridines such as 2-chloro-N-methylpyridine, and halogenated-N-alkylpyridines. Examples of imidosulfonates include naphthyl imide sulfonate and o-phthalimide sulfonate, and there is no limitation as long as the compound generates an acid under heat. When using a thermal acid generator, the amount thereof is preferably 0.1 to 30 parts by mass, more preferably 0.5 to 10 parts by mass, and further preferably 1 to 5 parts by mass, relative to 100 parts by mass of the resin (A). In the case of a positive photosensitive resin composition, a dissolution accelerator may be used to promote the removal of the useless resin after exposure. For example, a compound having a hydroxyl group or a carboxyl group is preferred. Examples of compounds having a hydroxyl group include: the carrier used for the above naphthoquinone diazide compounds, p-isopropylphenylphenol, bisphenols, resorcinols, linear phenol compounds such as MtrisPC and MtetraPC, non-linear phenol compounds such as TrisP-HAP, TrisP-PHBA, and TrisP-PA (all manufactured by Honshu Chemical Industry Co., Ltd.), 2 to 5 phenol-substituted diphenylmethane, 3,3-diphenylpropane, 1 to 5 phenol substitutions, a compound obtained by reacting 2,2-bis-(3-amino-4-hydroxyphenyl)hexafluoropropane with 5-northene-2,3-dicarboxylic anhydride at a molar ratio of 1:2, a compound obtained by reacting bis-(3-amino-4-hydroxyphenyl)sulfonate with 1,2-cyclohexyl dicarboxylic anhydride at a molar ratio of 1:2, N-hydroxysuccinimide, N-hydroxyphthalimide, N-hydroxy 5-northene-2,3-dicarboxylic anhydride, and the like. Examples of compounds having a carboxyl group include 3-phenyllactic acid, 4-hydroxyphenyllactic acid, 4-hydroxymandelic acid, 3,4-dihydroxymandelic acid, 4-hydroxy-3-methoxymandelic acid, 2-methoxy-2-(1-naphthyl)propionic acid, mandelic acid, 2-phenyllactic acid, α-methoxyphenylacetic acid, O-acetylmandelic acid, itaconic acid, etc. When a dissolution accelerator is used, the amount thereof is preferably 0.1 to 30 parts by weight relative to 100 parts by weight of the resin (A). (Aspect B) In another aspect of the present embodiment, a sulfur-containing compound (B) may be used instead of the above-mentioned cyclic compound (B) having a carbonyl group. More specifically, a photosensitive resin composition is provided, comprising (A) 100 parts by mass of at least one resin selected from the group consisting of polyamic acid, polyamic acid ester, polyamic acid salt, polyhydroxyamide, polyaminoamide, polyamide, polyamide imide, polyimide, polybenzoxazole, and novolac, polyhydroxystyrene and phenolic resin, (B) 0.01 to 10 parts by mass of a sulfur-containing compound based on 100 parts by mass of the resin (A), and (C) 1 to 50 parts by mass of a photosensitive agent based on 100 parts by mass of the resin (A). In this aspect, the resin (A) is preferably at least one selected from the group consisting of a polyimide precursor comprising the above-mentioned general formula (1), a polyamide comprising the above-mentioned general formula (4), a polyazole precursor comprising the above-mentioned general formula (5), a polyimide comprising the above-mentioned general formula (6), a novolac, a polyhydroxystyrene, and a phenolic resin comprising the above-mentioned general formula (7). In addition, it is preferred that the photosensitive resin composition comprises a phenolic resin having a repeating unit represented by the above-mentioned general formula (7), and X in the above-mentioned general formula (7) is a divalent organic group selected from the group consisting of a divalent group represented by the above-mentioned general formula (9) and a divalent group represented by the above-mentioned general formula (10). By formulating a sulfur-containing compound in a photosensitive resin composition, a photosensitive resin composition can be obtained that can form a hardened film in which the generation of voids at the interface in contact with the Cu layer after a high-temperature storage test is suppressed. (B) The sulfur-containing compound is an organic compound containing sulfur, preferably sulfur and nitrogen, and the sulfur is preferably contained in the form of an atom forming a ring structure or a thiocarbonyl group. Regarding those that can be used as (B) sulfur-containing compounds, those containing sulfur in the form of an atom forming a 5-membered ring structure include, for example: thiazole, 2-aminothiazole, 2-(4-thiazolyl)benzimidazole, 1,3,4-thiadiazole, 2-amino-1,3,4-thiadiazole, 5-amino-1,2,3-thiadiazole, 2,4-thiazolidinedione, benzothiazole, 2-aminobenzothiazole, etc. As for the one atom which contains sulfur in the form of forming a 6-membered ring structure, for example, thiophenethioindole, N-methylthiophenethioindole, etc., as for the one containing sulfur in the form of thiocarbonyl, for example, rhodanine, N-allyl rhodanine, diethylthiourea, dibutylthiourea, dicyclohexylthiourea, diphenylthiourea, 2-thiouracil, 4-thiouracil, 2,4-diphenylpyrimidine, 2-9-oxothioindole, , 2-hydroxy-4(3H)-quinazolinone, etc. Among them, it is preferred to use a compound with a thiourea structure. The amount of the sulfur-containing compound (B) is 0.01 to 10 parts by mass, preferably 0.05 to 2 parts by mass, relative to 100 parts by mass of the resin (A). From the perspective of migration resistance, it is ideal to be more than 0.01 parts by mass, and from the perspective of solubility, it is ideal to be less than 10 parts by mass. Sulfur-containing compounds, especially thiourea, can coordinate with copper through sulfur atoms. Thereby, the state of the copper surface changes, and copper migration is suppressed in the high temperature storage test. (Aspect C) In another aspect of this embodiment, (B) at least one compound selected from the following general formula (B-1), (B-2) and (B-3) can be used instead of the above-mentioned (B) cyclic compound having a carbonyl group. More specifically, a photosensitive resin composition is provided, which comprises (A) at least one resin selected from the group consisting of polyamic acid, polyamic acid ester, polyamic acid salt, polyhydroxyamide, polyaminoamide, polyamide, polyamide imide, polyimide, polybenzoxazole, and novolac, polyhydroxystyrene and phenolic resin: 100 parts by weight, (B) selected from the following general formula (B-1): [Chemical 88] {In the formula, R _q1 represents an organic group having 1 to 10 carbon atoms formed by carbon atoms, hydrogen atoms, nitrogen atoms and oxygen atoms}, the following general formula (B-2): [Chemical 89] {In the formula, R _q2 , R _q3 represents an organic group selected from a hydroxyl group, an alkyl group having 1 to 10 carbon atoms or an alkoxy group, ll represents an integer selected from 1 to 10, and the following general formula (B-3): {In the formula, R _q4 , R _q5 represents an organic group selected from a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group, and X _S represents a divalent alkyl group having 1 to 10 carbon atoms, mm and nn represent integers selected from 1 to 10, and at least one compound is present in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the resin (A), and (C) a photosensitive agent is present in an amount of 1 to 50 parts by weight based on 100 parts by weight of the resin (A). In this embodiment, the resin (A) is preferably at least one selected from the group consisting of a polyimide precursor comprising the general formula (1), a polyamide comprising the general formula (4), a polyazole precursor comprising the general formula (5), a polyimide comprising the general formula (6), a novolac, a polyhydroxystyrene, and a phenolic resin comprising the general formula (7). Furthermore, it is preferred that the photosensitive resin composition comprises a phenolic resin having a repeating unit represented by the general formula (7), wherein X in the general formula (7) is a divalent organic group selected from the group consisting of a divalent group represented by the general formula (9) and a divalent group represented by the general formula (10). (B) The compounds represented by the general formulas (B-1), (B-2) and (B-3), preferably the compound represented by (B-1), can change the surface state of copper by interacting with the surface of copper via nitrogen atoms or oxygen atoms. Therefore, copper migration during the high temperature storage test is suppressed. As a specific example, (B-1) is an organic compound having a urea group and composed of carbon atoms, hydrogen atoms, nitrogen atoms and oxygen atoms, for example, methyl urea, ethyl urea, butyl urea, phenyl urea, hydroxyethyl urea, hydantoin, allantoin, citrulline, etc. and mixtures thereof. (B-2) is a condensate of ethylene glycol or a terminal etherified product thereof, for example, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, diethylene glycol dibutyl ether, triethylene glycol, triethylene glycol monoethyl ether, triethylene glycol diethyl ether, tetraethylene glycol, tetraethylene glycol dimethyl ether, etc. and mixtures thereof. Furthermore, (B-3) is an alkoxypolyethylene oxide ester or alkoxyethyl ester of a dicarboxylic acid, for example, bis(2-methoxyethyl) adipate, bis(2-butoxyethyl) adipate, bis(2-ethoxyethyl) sebacate, etc. and mixtures thereof. The (B) is selected from at least one compound of the general formula (B-1), (B-2) and (B-3), and preferably the compound represented by the general formula (B-1) can be used. The amount of at least one compound of the general formula (B) selected from (B-1), (B-2) and (B-3) is preferably 0.01 to 10 parts by mass, more preferably 0.05 to 2 parts by mass, relative to 100 parts by mass of the (A) resin. From the viewpoint of migration resistance, it is preferably 0.01 parts by mass or more, and from the viewpoint of solubility, it is preferably 10 parts by mass or less. (Aspect D) In another aspect of this embodiment, (B) an aromatic amine compound, i.e., at least one selected from the group consisting of aniline derivatives represented by the following general formula (I), triazole derivatives represented by the following general formula (II), and triazole derivatives represented by the following general formula (III) can be used instead of the above-mentioned (B) cyclic compound having a carbonyl group. More specifically, a photosensitive resin composition is provided, comprising (A) 100 parts by weight of at least one resin selected from the group consisting of polyamic acid, polyamic acid ester, polyamic acid salt, polyhydroxyamide, polyaminoamide, polyamide, polyamide imide, polyimide, and polybenzoxazole, and (B) an aromatic amine compound, namely, the following general formula (I): {Ra1 to Ra5 may be the same or different, and are hydrogen atoms or hydroxyl groups, or saturated alkyl groups, unsaturated alkyl groups, aromatic groups or amide groups having an integer number of carbon atoms of 1 to 15; Ra6 to Ra7 may be the same or different, and are hydrogen atoms or saturated alkyl groups, unsaturated alkyl groups, or aromatic groups having an integer number of carbon atoms of 1 to 5}; or the following general formula (II): [Chemical 92] A triazole derivative represented by {Ra8 to Ra10 which may be the same or different and are a hydrogen atom or a hydroxyl group, or a saturated alkyl group, an unsaturated alkyl group, an aromatic group or an amide group having an integer of 1 to 15 carbon atoms}, or the following general formula (III): At least one of the triazole derivatives represented by {R11 to R13 which may be the same or different and are hydrogen atom or hydroxyl group, or a saturated alkyl group, unsaturated alkyl group, aromatic group or amide group having an integer of 1 to 15 carbon atoms}: 0.01 to 15 parts by mass based on 100 parts by mass of the resin (A); and (C) a photosensitive agent: 1 to 50 parts by mass based on 100 parts by mass of the resin (A). In this aspect, the resin (A) is preferably at least one selected from the group consisting of a polyimide precursor comprising the above-mentioned general formula (1), a polyamide comprising the above-mentioned general formula (4), a polyazole precursor comprising the above-mentioned general formula (5), and a polyimide comprising the above-mentioned general formula (6). In the embodiment using (B) aromatic amine compounds, as the photosensitive resin, polyamic acid, polyamic acid ester, polyamic acid salt, polyhydroxyamide, polyaminoamide, polyamide, polyamide imide, polyimide and polybenzoxazole can be used. Among them, in terms of excellent heat resistance and mechanical properties of the resin after heat treatment, polyamic acid, polyamic acid ester, polyamic acid salt, polyamide, polyhydroxyamide and polyimide resins are preferably used, and polyimide precursors and polyimide resins are the most preferred. By using (B) an aromatic amine compound, the generation of voids at the interface between the rewiring Cu layer and the resin layer after the high temperature storage test can be suppressed. The reason for this is not yet determined, but it is believed to be due to the following effect: the lone electron pair of the aromatic amine compound coordinates with the Cu element on the surface of the Cu layer, thereby blocking the active Cu reaction site, thereby suppressing the generation of voids. As the (B) aromatic amine compound, the following general formula (I) can be preferably used: [Chemical 94] An aniline derivative represented by {Ra1 to Ra5 may be the same or different, and are a hydrogen atom or a hydroxyl group, or a saturated alkyl group, an unsaturated alkyl group, an aromatic group, or an amide group having a carbon number of 1 to 15, and Ra6 to Ra7 may be the same or different, and are a hydrogen atom or a saturated alkyl group, an unsaturated alkyl group, or an aromatic group having a carbon number of 1 to 5}. As examples of compounds preferably used among the aniline derivatives represented by the general formula (I), N-phenylbenzylamine, hydroxyaniline, naphthol AS, 2-acetamidofluorene, oxalylaniline, N-allylaniline, N-methylaniline, N-ethylaniline, indoline, N-n-butylaniline, 2-anilinoethanol, 4-methoxyacetylaniline, acetylacetylaniline, 1,2,3,4-tetrahydroquinoline, t-butylphenylcarbamate, t-butyl(3-hydroxyphenyl)carbamate, oxalylaniline, N,N'-diphenylethane-1,2-diamine, and the like can be preferably used. Among them, N-phenylbenzylamine ((B)-1), N,N'-diphenylethane-1,2-diamine ((B)-2), tert-butylphenyl carbamate ((B)-3), and tert-butyl (3-hydroxyphenyl)carbamate ((B)-4) are particularly preferred. [Chemistry 95] [Chemistry 96] [Chemistry 97] [Chemistry 98] As the triazole derivative (B), the following general formula (II) can be preferably used: [Chemical 99] A triazole derivative represented by {Ra8 to Ra10 which may be the same or different and are a hydrogen atom or a hydroxyl group, or a saturated alkyl group, an unsaturated alkyl group, an aromatic group or an amide group having an integer of 1 to 15 carbon atoms}, or the following general formula (III): [Chemical 100] A triazole derivative represented by {Ra11 to Ra13, which may be the same or different, are a hydrogen atom or a hydroxyl group, or a saturated alkyl group, an unsaturated alkyl group, an aromatic group, or an amide group having an integer of 1 to 15 carbon atoms}. As specific examples of the triazole derivative represented by the general formula (II), benzotriazole, 1-hydroxybenzotriazole, 1-aminobenzotriazole, 5-methyl-1H-benzotriazole, 1H-1,2,3-triazole, 2-hydroxy-N-(1H-1,2,4-triazol-3-yl)benzamide (Adekastab CDA-1, manufactured by ADEKA Co., Ltd.), 2-(2H-benzo[d][1,2,3]triazol-2-yl)-4-(2,4,4-trimethylpentane-2-yl)phenol (Adekastab LA-29, manufactured by ADEKA Co., Ltd.), 2-(2'-hydroxy-3',5'-di-tert-aminophenyl)benzotriazole, and 2-(2'-hydroxy-5'-methylphenyl)benzotriazole can be preferably used. Among them, 2-hydroxy-N-(1H-1,2,4-triazol-3-yl)benzamide ((B)-5) and 2-(2H-benzo[d][1,2,3]triazol-2-yl)-4-(2,4,4-trimethylpentane-2-yl)phenol ((B)-6) are particularly preferred. [Chemical 101] [Chemistry 102] As specific examples of the triazole derivatives represented by the general formula (III), preferably used are (4-((1H-1,2,4-triazol-1-ylmethyl)phenyl)methanol, trithiazol, 1,2,4-1H-triazole, triapenthenol, bitertanol, 4-(1H-1,2,4-triazol-1-yl)benzaldehyde, 4-(1H-1,2,4-triazol-1-yl)benzoic acid, 3-(1H-1,2,4-triazol-1-yl)benzoic acid, 1H-1,2,4-triazol-1-ylmethyl) phenyl] methanol, 3-(1H-1,2,4-triazol-1-yl) benzaldehyde, 3-(1H-1,2,4-triazol-1-ylmethyl) benzaldehyde, 3-(1H-1,2,4-triazol-1-ylmethyl) benzoic acid, 2-(1H-1,2,4-triazol-1-yl) aniline. Among them, (4-((1H-1,2,4-triazol-1-ylmethyl) phenyl) methanol ((B)-7) can be particularly preferably used. [Chemical 103] In the aromatic amine compound (B), in terms of coordination ability with the Cu element, it is preferred that any of the amine atoms constituting the aniline derivative or the triazole derivative is a diamine. The content of the aromatic amine compound (B) is preferably 0.01 to 15 parts by mass, more preferably 0.1 to 10 parts by mass, and further preferably 1 to 8 parts by mass, relative to 100 parts by mass of the resin (A). If the content is more than the range, the storage stability is reduced, which is not preferred. If the content is less than the range, gaps are easily generated between the copper surface. <Method for manufacturing hardened relief pattern and semiconductor device> The present invention also provides a method for manufacturing hardened relief pattern, which comprises: (1) forming a resin layer on a substrate by coating the photosensitive resin composition of the present invention on the substrate; (2) exposing the resin layer; (3) developing the exposed resin layer to form a relief pattern; and (4) forming a hardened relief pattern by heat-treating the relief pattern. Typical aspects of each step are described below. (1) Step of forming a resin layer on a substrate by coating a photosensitive resin composition on the substrate In this step, the photosensitive resin composition of the present invention is coated on a substrate and then dried as needed to form a resin layer. As a coating method, a method previously used for coating a photosensitive resin composition can be adopted, such as a coating method using a rotary coater, a rod coater, a doctor blade coater, a curtain coater, a screen printer, etc., a spray coating method using a spray coater, etc. The coating film containing the photosensitive resin composition can be dried as needed. As drying methods, air drying, heat drying using an oven or a heating plate, vacuum drying, and the like can be used. Specifically, when air drying or heat drying is performed, the drying can be performed at 20°C to 140°C for 1 minute to 1 hour. A resin layer can be formed on the substrate in the above manner. (2) Step of exposing the resin layer In this step, an exposure device such as a contact exposure machine, a mirror projection exposure machine, a stepper, etc. is used to expose the resin layer formed above through a photomask or a reticle having a pattern, or directly by an ultraviolet light source. Thereafter, in order to improve photosensitivity, etc., a post-exposure bake (PEB) and/or a pre-development bake may be performed as needed under any combination of temperature and time. The preferred range of baking conditions is a temperature of 40 to 120°C and a time of 10 seconds to 240 seconds, but it is not limited to this range as long as the properties of the photosensitive resin composition of the present invention are not impaired. (3) Step of developing the exposed resin layer to form a relief pattern In this step, the exposed portion or the unexposed portion of the exposed photosensitive resin layer is developed and removed. When a negative photosensitive resin composition is used (for example, when a polyimide precursor or polyamide is used as the (A) resin), the unexposed portion is developed and removed, and when a positive photosensitive resin composition is used (for example, when a polyazole precursor or a soluble polyimide is used as the (A) resin), the exposed portion is developed and removed. As a developing method, any method can be selected from previously known photoresist developing methods, such as a rotary spray method, a liquid coating method, and an immersion method accompanied by ultrasonic treatment. In addition, after development, in order to adjust the shape of the relief pattern, post-development baking under conditions of any combination of temperature and time can be implemented as needed. The developer used in the development is preferably a good solvent for the photosensitive resin composition, or a combination of the good solvent and a poor solvent. For example, in the case of a photosensitive resin composition that is insoluble in an alkaline aqueous solution, the good solvent is preferably N-methylpyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, cyclopentanone, cyclohexanone, γ-butyrolactone, α-acetyl-γ-butyrolactone, etc., and the poor solvent is preferably toluene, xylene, methanol, ethanol, isopropyl alcohol, ethyl lactate, propylene glycol methyl ether acetate and water, etc. When a good solvent and a poor solvent are mixed for use, it is preferred to adjust the ratio of the poor solvent to the good solvent according to the solubility of the polymer in the photosensitive resin composition. In addition, two or more solvents, for example, a combination of several solvents, may be used. On the other hand, in the case of a photosensitive resin composition dissolved in an alkaline aqueous solution, the developer used during development is one that dissolves and removes the polymer soluble in the alkaline aqueous solution, and is typically an alkaline aqueous solution in which an alkaline compound is dissolved. The alkaline compound dissolved in the developer may be any of an inorganic alkaline compound or an organic alkaline compound. Examples of the inorganic alkaline compound include lithium hydroxide, sodium hydroxide, potassium hydroxide, diammonium hydrogen phosphate, dipotassium hydrogen phosphate, disodium hydrogen phosphate, lithium silicate, sodium silicate, potassium silicate, lithium carbonate, sodium carbonate, potassium carbonate, lithium borate, sodium borate, potassium borate, and ammonia. In addition, examples of the organic alkaline compound include tetramethylammonium hydroxide, tetraethylammonium hydroxide, trimethylhydroxyethylammonium hydroxide, methylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, n-propylamine, di-n-propylamine, isopropylamine, diisopropylamine, methyldiethylamine, dimethylethanolamine, ethanolamine, and triethanolamine. Furthermore, a water-soluble organic solvent such as methanol, ethanol, propanol or ethylene glycol, a surfactant, a storage stabilizer, and a resin dissolution inhibitor may be added to the alkaline aqueous solution as needed. A relief pattern may be formed in the above manner. (4) A step of forming a hardened relief pattern by heat-treating the relief pattern In this step, the relief pattern obtained by the above-mentioned development is converted into a hardened relief pattern by heating. As a method of heat-hardening, various methods can be selected, such as using a heating plate, using an oven, and using a temperature-raising oven with a settable temperature control program. Heating can be performed under conditions such as 180°C to 400°C for 30 minutes to 5 hours. As the ambient gas during heat-hardening, air can be used, and an inert gas such as nitrogen and argon can also be used. <Semiconductor device> The present invention also provides a semiconductor device comprising a hardened relief pattern obtained by the above-mentioned method for manufacturing a hardened relief pattern of the present invention. The present invention also provides a semiconductor device comprising a substrate as a semiconductor element and a hardened embossed pattern of a resin formed on the substrate by the hardened embossed pattern manufacturing method. Furthermore, the present invention is also applicable to a method for manufacturing a semiconductor device using a semiconductor element as a substrate, including the hardened embossed pattern manufacturing method as a part of the steps. The semiconductor device of the present invention can be manufactured by forming the hardened embossed pattern formed by the hardened embossed pattern manufacturing method into a surface protective film, an interlayer insulating film, an insulating film for redistribution, a protective film for a flip chip device, or a protective film for a semiconductor device having a bump structure, and combining it with a known method for manufacturing a semiconductor device. In addition to being suitable for semiconductor devices as described above, the photosensitive resin composition of the present invention can also be used for interlayer insulation of multilayer circuits, protective coatings of flexible copper-clad boards, solder resists, and liquid crystal alignment films. In addition, although Aspects A to D are described separately above, the present invention also includes combinations of the various aspects. [Examples] The present invention is specifically described below by way of examples, but the present invention is not limited thereto. In the examples, comparative examples, and manufacturing examples, the physical properties of the photosensitive resin composition were measured and evaluated according to the following methods. (1) Weight average molecular weight The weight average molecular weight (Mw) of each resin was measured by gel permeation chromatography (converted to standard polystyrene). The column used in the measurement was the "Shodex 805M/806M series" manufactured by Showa Denko Co., Ltd., the standard monodisperse polystyrene was the "Shodex STANDARD SM-105" manufactured by Showa Denko Co., Ltd., the developing solvent was N-methyl-2-pyrrolidone, and the detector was the "Shodex RI-930" manufactured by Showa Denko Co., Ltd. (2) Fabrication of hardened relief pattern on Cu Using a sputtering device (L-440S-FHL model, manufactured by Canon Anelva), 200 nm thick Ti and 400 nm thick Cu were sputtered on a 6-inch silicon wafer (manufactured by Fujimi Electronic Industry Co., Ltd., thickness 625±25 μm). Next, a photosensitive resin composition prepared by the following method was spin-coated on the wafer using a coating developer (D-Spin 60A, manufactured by SOKUDO) and dried to form a coating film with a thickness of 6 to 10 μm. The coating film was irradiated with 300 mJ/cm using a photomask with a test pattern and a parallel light mask alignment exposure machine (PLA-501FA, manufactured by Canon). ² Then, cyclopentanone was used as a developer in the case of negative type, and 2.38% TMAH (tetramethylammonium hydroxide) was used as a developer in the case of positive type, and the coating film was spray developed using a coating developer (D-Spin60A, manufactured by SOKUDO Co.), and propylene glycol methyl ether acetate was used for rinsing in the case of negative type, and pure water was used for rinsing in the case of positive type, thereby obtaining a relief pattern on Cu. The wafer having the relief pattern formed on Cu was heated for 2 hours at the temperature described in each embodiment in a nitrogen environment using a temperature-programmed curing furnace (VF-2000, manufactured by Koyo Lindberg), thereby obtaining a hardened relief pattern including a resin with a thickness of about 6 to 7 μm on Cu. (3) High temperature storage test and subsequent evaluation of the hardened relief pattern on Cu The wafer having the hardened relief pattern formed on Cu was heated for 168 hours at 150°C in air using a temperature-programmed curing furnace (VF-2000, manufactured by Koyo Lindberg). Next, plasma etching was performed using a plasma surface treatment device (EXAM model, manufactured by Shinko Seiki Co., Ltd.) to remove all the resin layers on the Cu. The plasma etching conditions were as follows. Output: 133 W Gas type and flow rate: O ₂ ：40 ml/min＋CF ₄ : 1 ml/min Gas pressure: 50 Pa Mode: hard mode Etching time: 1800 seconds FE-SEM (field emission-scanning electron microscope) (S-4800, manufactured by Hitachi High-Technologies) was used to observe the Cu surface after the resin layer was completely removed. Image analysis software (A-Image, manufactured by Asahi Kasei Corporation) was used to calculate the area ratio of the voids on the surface of the Cu layer. (4) Evaluation of varnish storage stability The photosensitive resin compositions obtained in the examples and comparative examples were placed in an environment of 23°C and 50% Rh for 3 weeks to observe the viscosity change. The viscosity was measured using a TV-25 viscometer (manufactured by Toki Sangyo) at 23°C. ○: The viscosity change rate (described below) of the composition after standing is within 10%. ×: The viscosity change rate of the composition after standing is greater than 10%. Viscosity change rate (%) = {(initial viscosity) - absolute value of (viscosity after standing)} × 100 / (initial viscosity) Example A <Production Example A1> ((A) Synthesis of polymer A as a polyimide precursor) In a 2 L separable flask, 155.1 g of 4,4'-oxydiphthalic anhydride (ODPA) was placed, 131.2 g of 2-hydroxyethyl methacrylate (HEMA) and 400 ml of γ-butyrolactone were added and stirred at room temperature, and 81.5 g of pyridine was added while stirring to obtain a reaction mixture. After the exotherm generated by the reaction ended, the mixture was left to cool to room temperature and left for 16 hours. Next, under ice-cooling, a solution of 206.3 g of dicyclohexylcarbodiimide (DCC) dissolved in 180 ml of γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring, and then 93.0 g of 4,4'-diaminodiphenyl ether (DADPE) suspended in 350 ml of γ-butyrolactone was added over 60 minutes while stirring. After stirring at room temperature for 2 hours, 30 ml of ethanol was added and stirred for 1 hour, and then 400 ml of γ-butyrolactone was added. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution. The obtained reaction solution was added to 3 L of ethanol to generate a precipitate containing a crude polymer. The crude polymer generated was separated by filtration and dissolved in 1.5 L of tetrahydrofuran to obtain a crude polymer solution. The crude polymer solution was added dropwise to 28 L of water to precipitate the polymer. The precipitate was separated by filtration and then vacuum dried to obtain a powdered polymer (polymer A). The molecular weight of polymer A was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 20,000. In addition, the weight average molecular weight of the resin obtained in each production example was measured by gel permeation chromatography (GPC) under the following conditions to obtain the weight average molecular weight calculated in terms of standard polystyrene. Pump: JASCO PU-980 Detector: JASCO RI-930 Column oven: JASCO CO-965 40°C Column: 2 Shodex KD-806M in series Mobile phase: 0.1 mol/L LiBr/NMP (N-methylpyrrolidone) Flow rate: 1 ml/min. <Production Example A2> ((A) Synthesis of polymer B as a polyimide precursor) Polymer B was obtained by reacting in the same manner as in the above-mentioned Production Example A1, except that 147.1 g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) was used instead of 155.1 g of 4,4'-oxydiphthalic dianhydride (ODPA) in Production Example A1. The molecular weight of polymer B was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 22,000. <Production Example A3> ((A) Synthesis of polymer C as polyimide precursor) Polymer C was obtained by reacting in the same manner as the method described in the above Production Example A1, except that 147.8 g of 2,2'-bistrifluoromethyl-4,4'-diaminobiphenyl (TFMB) was used instead of 93.0 g of 4,4'-diaminodiphenyl ether (DADPE). The molecular weight of polymer C was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 21,000. <Production Example A4> ((A) Synthesis of polymer D as polyamide) (Synthesis of phthalic acid compound end-capping body AIPA-MO) In a 5 L separable flask, 543.5 g of 5-aminoisophthalic acid {hereinafter referred to as AIPA} and 1700 g of N-methyl-2-pyrrolidone were added, mixed and stirred, and heated to 50°C in a water bath. 512.0 g (3.3 mol) of 2-methacryloyloxyethyl isocyanate diluted with 500 g of γ-butyrolactone was added dropwise using a dropping funnel, and the mixture was stirred at 50°C for about 2 hours. After confirming the completion of the reaction (disappearance of 5-aminoisophthalic acid) by low molecular weight gel permeation chromatography (hereinafter referred to as low molecular weight GPC), the reaction solution was put into 15 L of ion exchange water, stirred, and allowed to stand. After the crystallization and precipitation of the reaction product, it was filtered and separated. After appropriate water washing, it was vacuum dried at 40°C for 48 hours to obtain AIPA-MO obtained by the reaction of the amino group of 5-aminoisophthalic acid with the isocyanate group of 2-methylacryloyloxyethyl isocyanate. The low molecular weight GPC purity of the obtained AIPA-MO was about 100%. (Synthesis of polymer D) Into a 2 L separable flask were placed 100.89 g (0.3 mol) of the obtained AIPA-MO, 71.2 g (0.9 mol) of pyridine, and 400 g of GBL (γ-butyrolactone), mixed, and cooled to 5°C in an ice bath. Under ice-cooling, 125.0 g (0.606 mol) of dicyclohexylcarbodiimide (DCC) dissolved and diluted in 125 g of GBL was added dropwise over about 20 minutes, and then 103.16 g (0.28 mol) of 4,4'-bis(4-aminophenoxy)biphenyl {hereinafter referred to as BAPB} was added dropwise over about 20 minutes. The temperature did not reach 5° C. for 3 hours in an ice bath, and then the ice bath was removed and stirred at room temperature for 5 hours. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution. A mixture of 840 g of water and 560 g of isopropanol was added dropwise to the obtained reaction solution to separate the precipitated polymer, which was then redissolved in 650 g of NMP. The obtained crude polymer solution was added dropwise to 5 L of water to precipitate the polymer. The obtained precipitate was filtered and separated, and then vacuum dried to obtain a powdered polymer (polymer E). The molecular weight of polymer D was determined by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 34,700. <Production Example A5> ((A) Synthesis of polymer E as a precursor of polyoxazole) In a 3 L separable flask, 183.1 g of 2,2-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane, 640.9 g of N,N-dimethylacetamide (DMAc), and 63.3 g of pyridine were mixed and stirred at room temperature (25°C) to prepare a uniform solution. 118.0 g of 4,4'-diphenylether dimethyl chloride dissolved in 354 g of diethylene glycol dimethyl ether (DMDG) was added dropwise using a dropping funnel. At this time, the separable flask was cooled in a water bath at 15-20°C. The time required for the dropping was 40 minutes, and the maximum reaction liquid temperature was 30°C. Three hours after the dripping was completed, 30.8 g (0.2 mol) of 1,2-cyclohexyl dicarboxylic anhydride was added to the reaction solution, and the mixture was stirred at room temperature for 15 hours to end the amine terminal groups of the polymer chain, which accounted for 99% of the total number, with carboxyl cyclohexylamide groups. The reaction rate at this time can be easily calculated by tracking the residual amount of 1,2-cyclohexyl dicarboxylic anhydride added by high performance liquid chromatography (HPLC). Thereafter, the reaction solution was added dropwise to 2 L of water under high-speed stirring to disperse and precipitate the polymer, which was recovered, appropriately washed with water, dehydrated, and then vacuum dried to obtain a crude polybenzoxazole precursor having a weight average molecular weight of 9,000 (polystyrene conversion) as measured by gel permeation chromatography (GPC). The crude polybenzoxazole precursor obtained above was redissolved in γ-butyrolactone (GBL), treated with a cation exchange resin and an anion exchange resin, and the solution obtained was put into ion exchange water, and the precipitated polymer was separated by filtration, washed with water, and vacuum dried to obtain a purified polybenzoxazole precursor (polymer E). <Production Example A6> ((A) Synthesis of Polymer F as Polyimide) A glass separable four-necked flask equipped with a Teflon (registered trademark) anchor-type stirrer was equipped with a cooling tube with a Dean-Stark separator. The flask was immersed in a silicone oil bath and stirred while nitrogen was introduced. 72.28 g (280 mmol) of 2,2-bis(3-amino-4-hydroxyphenyl)propane (manufactured by Clariant Japan) (hereinafter referred to as BAP), 70.29 g (266 mmol) of 5-(2,5-dioxotetrahydro-3-furyl)-3-methyl-cyclohexene-1,2-dicarboxylic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) (hereinafter referred to as MCTC), 254.6 g of γ-butyrolactone, and 60 g of toluene were added, and the mixture was stirred at 100 rpm at room temperature for 4 hours. Then, 4.6 g (28 mmol) of 5-northoxene-2,3-dicarboxylic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) was added, and the mixture was heated and stirred at 100 rpm at a silicon bath temperature of 50° C. for 8 hours while nitrogen was passed through. Then, heat to a silica bath temperature of 180°C and heat and stir at 100 rpm for 2 hours. Remove the toluene and water expelled during the reaction. After the imidization reaction is completed, return to room temperature. Then, add the above reaction solution dropwise to 3 L of water under high-speed stirring to disperse and precipitate the polymer, recover it, wash it with appropriate water, dehydrate it, and then vacuum dry it to obtain a crude polyimide (polymer F) with a weight average molecular weight of 23,000 (polystyrene conversion) measured by gel permeation chromatography (GPC). <Production Example A7> ((A) Synthesis of polymer G as phenol resin) In a separable flask with a volume of 0.5 L and equipped with a Dean-Stark apparatus, 128.3 g (0.76 mol) of methyl 3,5-dihydroxybenzoate, 121.2 g (0.5 mol) of 4,4'-bis(methoxymethyl)biphenyl (hereinafter also referred to as "BMMB"), 3.9 g (0.025 mol) of diethylsulfate, and 140 g of diethylene glycol dimethyl ether were mixed and stirred at 70°C to dissolve the solid matter. The mixed solution was heated to 140°C in an oil bath, and methanol was confirmed to be generated from the reaction solution. The reaction solution was stirred at 140°C for 2 hours. Then, the reaction vessel was cooled in the atmosphere, and 100 g of tetrahydrofuran was added thereto and stirred. The above reaction dilution was added dropwise to 4 L of water under high-speed stirring to disperse and precipitate the resin, which was recovered, washed with water appropriately, and vacuum dried after dehydration to obtain a copolymer containing 3,5-dihydroxybenzoic acid methyl ester/BMMB (polymer G) with a yield of 70%. The weight average molecular weight of the polymer G calculated by the standard polystyrene conversion by the GPC method was 21,000. <Production Example A8> ((A) Synthesis of polymer H as phenol resin) A 1.0 L separable flask with a Dean-Stark apparatus was replaced with nitrogen, and then 81.3 g (0.738 mol) of resorcinol, 84.8 g (0.35 mol) of BMMB, 3.81 g (0.02 mol) of p-toluenesulfonic acid, and 116 g of propylene glycol monomethyl ether (hereinafter also referred to as PGME) were mixed and stirred at 50°C in the separable flask to dissolve the solids. The mixed solution was heated to 120°C in an oil bath, and methanol was confirmed to be generated from the reaction solution. The reaction solution was stirred at 120°C for 3 hours. Then, 24.9 g (0.150 mol) of 2,6-bis(hydroxymethyl)-p-cresol and 249 g of PGME were mixed and stirred in another container to make them uniformly dissolved, and the obtained solution was dripped into the separable flask using a dropping funnel over a period of 1 hour, and then stirred for 2 hours. After the reaction was completed, the same treatment as in Preparation Example A7 was performed to obtain a copolymer (polymer H) containing resorcinol/BMMB/2,6-bis(hydroxymethyl)-p-cresol with a yield of 77%. The weight average molecular weight of the polymer H calculated by standard polystyrene conversion by GPC method was 9,900. <Example A1> A negative photosensitive resin composition was prepared using polymers A and B by the following method, and the prepared photosensitive resin composition was evaluated. 50 g of polymer A and 50 g of polymer B (equivalent to (A) resin) as polyimide precursors, 0.2 g of xanthine (equivalent to (B) cyclic compound having a carbonyl group), 4 g of 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)-oxime (referred to as "PDO" in Table 1) (equivalent to (C) photosensitizer), 8 g of tetraethylene glycol dimethacrylate, and 1.5 g of N-[3-(triethoxysilyl)propyl]phthalamide were dissolved in a mixed solvent containing 80 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) and 20 g of ethyl lactate. By further adding a small amount of the above-mentioned mixed solvent, the viscosity of the obtained solution is adjusted to about 35 poise to prepare a negative photosensitive resin composition. The composition is cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer is evaluated, and a result of 5.2% is obtained. <Example A2> In the above-mentioned Example A1, the amount of xanthine added as component (B) is changed to 0.05 g. Except for this, a negative photosensitive resin composition solution is prepared in the same manner as Example A1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 6.4% was obtained. <Example A3> In the above Example A1, the amount of xanthine added as component (B) was changed to 5 g. Otherwise, a negative photosensitive resin composition solution was prepared in the same manner as Example A1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.9% was obtained. <Example A4> In the above-mentioned Example A1, 8-azaxanthine was used as the (B) component instead of xanthine, and a negative photosensitive resin composition solution was prepared in the same manner as in Example A1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.1% was obtained. <Example A5> In the above-mentioned Example A1, uric acid was used as the (B) component instead of xanthine, and a negative photosensitive resin composition solution was prepared in the same manner as in Example A1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.4% was obtained. <Example A6> In the above Example A1, dioxotetrahydropteridine was used instead of xanthine as the (B) component. In addition, a negative photosensitive resin composition solution was prepared in the same manner as Example A1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.5% was obtained. <Example A7> In the above-mentioned Example A1, except that barbituric acid was used instead of xanthine as the (B) component, a negative photosensitive resin composition solution was prepared in the same manner as in Example A1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 7.3% was obtained. <Example A8> A negative photosensitive resin composition solution was prepared in the same manner as in Example A1. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 4.5% was obtained. <Example A9> In the above-mentioned Example A1, as the (A) resin, 50 g of polymer A and 50 g of polymer B were changed to 100 g of polymer A, and as the (C) component, 4 g of PDO was changed to 2.5 g of 1,2-octanedione-1-{4-(phenylthio)-2-(O-benzoyl oxime)} (Irgacure OXE01 (manufactured by BASF, trade name)). A negative photosensitive resin composition solution was prepared in the same manner as in Example A1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 5.1% was obtained. <Example A10> In the above-mentioned Example A1, a negative photosensitive resin composition solution was prepared in the same manner as in Example A1, except that as the (A) resin, 50 g of polymer A and 50 g of polymer B were changed to 100 g of polymer A, as the (C) component, 4 g of PDO was changed to 2.5 g of 1,2-octanedione-1-{4-(phenylthio)-2-(O-benzoyl oxime)} (Irgacure OXE01 (manufactured by BASF, trade name)), and the solvent was changed to 85 g of γ-butyrolactone and 15 g of dimethyl sulfoxide. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.2% was obtained. <Example A11> In the above Example A1, 50 g of polymer A and 50 g of polymer B were changed to 100 g of polymer C as the (A) resin. A negative photosensitive resin composition solution was prepared in the same manner as Example A1. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.9% was obtained. <Example A12> In the above-mentioned Example A1, as the (A) resin, 50 g of polymer A and 50 g of polymer B were changed to 100 g of polymer D. In addition, a negative photosensitive resin composition solution was prepared in the same manner as in Example A1. The composition was cured at 250°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 5.0% was obtained. <Example A13> Using polymer E, a positive photosensitive resin composition was prepared by the following method, and the prepared photosensitive resin composition was evaluated. 100 g of polymer E (equivalent to resin (A)) as a precursor of polyazole is reacted with the following formula (96): 20 g of a photosensitive diazoquinone compound (produced by Toyo Gosei Co., Ltd., equivalent to (C) photosensitive agent) (C1) containing 77% phenolic hydroxyl groups, 0.2 g of xanthine (equivalent to (B) a cyclic compound having a carbonyl group), and 6 g of 3-tert-butoxycarbonylaminopropyltriethoxysilane were dissolved in 100 g of γ-butyrolactone (as a solvent). A small amount of γ-butyrolactone was further added to adjust the viscosity of the obtained solution to about 20 poise, thereby preparing a positive photosensitive resin composition. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.5% was obtained. <Example A14> In the above Example A13, a positive photosensitive resin composition solution was prepared in the same manner as Example A13, except that 100 g of polymer E was replaced with 100 g of polymer F as the (A) resin. The composition was cured at 250°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.7% was obtained. <Example A15> In the above-mentioned Example A13, as the (A) resin, 100 g of polymer E was replaced by 100 g of polymer G, and a positive photosensitive resin composition solution was prepared in the same manner as in Example A13. The composition was cured at 220°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer, and after a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 5.3% was obtained. <Example A16> In the above-mentioned Example A13, as the (A) resin, 100 g of polymer E was replaced by 100 g of polymer H, and a positive photosensitive resin composition solution was prepared in the same manner as in Example A13. The composition was cured at 220°C by the above method to produce a hardened relief pattern on the Cu layer. After a high temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.2% was obtained. <Comparative Example A1> In the composition of Example A1, 0.2 g of benzotriazole was added instead of 0.2 g of xanthine. In addition, a negative photosensitive resin composition was prepared in the same manner as Example A1, and the same evaluation as Example A1 was performed. Since the (B) compound of the present invention was not contained, the evaluation result was 15.2%. <Comparative Example A2> In the composition of Example A1, xanthine was not added. A negative photosensitive resin composition was prepared in the same manner as in Example A1, and the same evaluation as in Example A1 was performed. Since the compound (B) of the present invention was not contained, the evaluation result was 14.3%. <Comparative Example A3> In the composition of Example A10, xanthine was not added. A negative photosensitive resin composition was prepared in the same manner as in Example A10, and the same evaluation as in Example A10 was performed. Since the compound (B) of the present invention was not contained, the evaluation result was 15.7%. <Comparative Example A4> In the composition of Example A11, xanthine was not added. A negative photosensitive resin composition was prepared in the same manner as Example A11, and the same evaluation as Example A11 was performed. Since the compound (B) of the present invention was not contained, the evaluation result was 14.9%. The results of Examples A1 to 16 and Comparative Examples A1 to 4 are summarized in Table 1. Example B <Production Example B1> ((A) Synthesis of polymer A as a polyimide precursor) In a 2 L separable flask, 155.1 g of 4,4'-oxydiphthalic anhydride (ODPA) was placed, 131.2 g of 2-hydroxyethyl methacrylate (HEMA) and 400 ml of γ-butyrolactone were added and stirred at room temperature, and 81.5 g of pyridine was added while stirring to obtain a reaction mixture. After the exotherm generated by the reaction ended, the mixture was left to cool to room temperature for 16 hours. Next, under ice-cooling, a solution of 206.3 g of dicyclohexylcarbodiimide (DCC) dissolved in 180 ml of γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring, and then 93.0 g of 4,4'-diaminodiphenyl ether (DADPE) suspended in 350 ml of γ-butyrolactone was added over 60 minutes while stirring. After stirring at room temperature for 2 hours, 30 ml of ethanol was added and stirred for 1 hour, and then 400 ml of γ-butyrolactone was added. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution. The obtained reaction solution was added to 3 L of ethanol to generate a precipitate containing a crude polymer. The crude polymer generated was separated by filtration and dissolved in 1.5 L of tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was added dropwise to 28 L of water to precipitate the polymer. The obtained precipitate was separated by filtration and then vacuum dried to obtain a powdered polymer (polymer A). The molecular weight of polymer A was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 20,000. In addition, the weight average molecular weight of the resin obtained in each production example B was measured by gel permeation chromatography (GPC) under the following conditions to obtain the weight average molecular weight calculated in terms of standard polystyrene. Pump: JASCO PU-980 Detector: JASCO RI-930 Column oven: JASCO CO-965 40°C Column: 2 Shodex KD-806M in series Mobile phase: 0.1 mol/L LiBr/NMP Flow rate: 1 ml/min. <Production Example B2> ((A) Synthesis of polymer B as a polyimide precursor) Polymer B was obtained by reacting in the same manner as in the above-mentioned Production Example B1, except that 147.1 g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) was used instead of 155.1 g of 4,4'-oxydiphthalic dianhydride (ODPA) in Production Example B1. The molecular weight of polymer B was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 22,000. <Production Example B3> ((A) Synthesis of polymer C as a polyimide precursor) Polymer C was obtained by reacting in the same manner as in the above-mentioned Production Example B1 except that 147.8 g of 2,2'-bistrifluoromethyl-4,4'-diaminobiphenyl (TFMB) was used instead of 93.0 g of 4,4'-diaminodiphenyl ether (DADPE). The molecular weight of polymer C was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 21,000. <Production Example B4> ((A) Synthesis of polymer D as polyamide) (Synthesis of phthalic acid compound end-capping body AIPA-MO) In a 5 L separable flask, 543.5 g of 5-aminoisophthalic acid {hereinafter referred to as AIPA} and 1700 g of N-methyl-2-pyrrolidone were added, mixed and stirred, and heated to 50°C in a water bath. 512.0 g (3.3 mol) of 2-methacryloyloxyethyl isocyanate diluted with 500 g of γ-butyrolactone was added dropwise using a dropping funnel, and the mixture was stirred at 50°C for about 2 hours. After confirming the completion of the reaction (disappearance of 5-aminoisophthalic acid) by low molecular weight gel permeation chromatography (hereinafter referred to as low molecular weight GPC), the reaction solution was put into 15 L of ion exchange water, stirred, and allowed to stand. After the crystallization and precipitation of the reaction product, it was filtered and separated. After appropriate water washing, it was vacuum dried at 40°C for 48 hours to obtain AIPA-MO obtained by the reaction of the amino group of 5-aminoisophthalic acid with the isocyanate group of 2-methylacryloyloxyethyl isocyanate. The low molecular weight GPC purity of the obtained AIPA-MO was about 100%. (Synthesis of Polymer D) Into a 2 L separable flask were placed 100.89 g (0.3 mol) of the obtained AIPA-MO, 71.2 g (0.9 mol) of pyridine, and 400 g of GBL, the mixture was mixed, and the mixture was cooled to 5° C. in an ice bath. Under ice-cooling, 125.0 g (0.606 mol) of dicyclohexylcarbodiimide (DCC) dissolved and diluted in 125 g of GBL was added dropwise over about 20 minutes, and then 103.16 g (0.28 mol) of 4,4'-bis(4-aminophenoxy)biphenyl {hereinafter referred to as BAPB} was added dropwise over about 20 minutes. The temperature did not reach 5° C. for 3 hours in an ice bath, and then the ice bath was removed and stirred at room temperature for 5 hours. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution. A mixture of 840 g of water and 560 g of isopropanol was added dropwise to the obtained reaction solution to separate the precipitated polymer, which was then redissolved in 650 g of NMP. The obtained crude polymer solution was added dropwise to 5 L of water to precipitate the polymer. The obtained precipitate was filtered and separated, and then vacuum dried to obtain a powdered polymer (polymer E). The molecular weight of polymer D was determined by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 34,700. <Production Example B5> ((A) Synthesis of polymer E as a precursor of polyoxazole) In a 3 L separable flask, 183.1 g of 2,2-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane, 640.9 g of N,N-dimethylacetamide (DMAc), and 63.3 g of pyridine were mixed and stirred at room temperature (25°C) to prepare a uniform solution. 118.0 g of 4,4'-diphenylether dimethyl chloride dissolved in 354 g of diethylene glycol dimethyl ether (DMDG) was added dropwise using a dropping funnel. At this time, the separable flask was cooled in a water bath at 15-20°C. The time required for the dropping was 40 minutes, and the maximum reaction liquid temperature was 30°C. Three hours after the dripping was completed, 30.8 g (0.2 mol) of 1,2-cyclohexyl dicarboxylic anhydride was added to the reaction solution, and the mixture was stirred at room temperature for 15 hours to end the amine terminal groups of the polymer chain, which accounted for 99% of the total number, with carboxyl cyclohexylamide groups. The reaction rate at this time can be easily calculated by tracking the residual amount of 1,2-cyclohexyl dicarboxylic anhydride added by high performance liquid chromatography (HPLC). Thereafter, the reaction solution was added dropwise to 2 L of water under high-speed stirring to disperse and precipitate the polymer, which was recovered, appropriately washed with water, dehydrated, and then vacuum dried to obtain a crude polybenzoxazole precursor having a weight average molecular weight of 9,000 (polystyrene conversion) as measured by gel permeation chromatography (GPC). The crude polybenzoxazole precursor obtained above was redissolved in γ-butyrolactone (GBL), treated with a cation exchange resin and an anion exchange resin, and the solution obtained was put into ion exchange water, and the precipitated polymer was separated by filtration, washed with water, and vacuum dried to obtain a purified polybenzoxazole precursor (polymer E). <Production Example B6> ((A) Synthesis of Polymer F as Polyimide) A glass separable four-necked flask equipped with a Teflon (registered trademark) anchor-type stirrer was equipped with a cooling tube with a Dean-Stark separator. The flask was immersed in a silicone oil bath and stirred while nitrogen was introduced. 72.28 g (280 mmol) of 2,2-bis(3-amino-4-hydroxyphenyl)propane (manufactured by Clariant Japan) (hereinafter referred to as BAP), 70.29 g (266 mmol) of 5-(2,5-dioxotetrahydro-3-furyl)-3-methyl-cyclohexene-1,2-dicarboxylic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) (hereinafter referred to as MCTC), 254.6 g of γ-butyrolactone, and 60 g of toluene were added, and the mixture was stirred at 100 rpm at room temperature for 4 hours. Then, 4.6 g (28 mmol) of 5-northoxene-2,3-dicarboxylic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) was added, and the mixture was heated and stirred at 100 rpm at a silicon bath temperature of 50° C. for 8 hours while nitrogen was passed through. Then, heat to a silica bath temperature of 180°C and heat and stir at 100 rpm for 2 hours. Remove the toluene and water expelled during the reaction. After the imidization reaction is completed, return to room temperature. Then, add the above reaction solution dropwise to 3 L of water under high-speed stirring to disperse and precipitate the polymer, recover it, wash it with appropriate water, dehydrate it, and then vacuum dry it to obtain a crude polyimide (polymer F) with a weight average molecular weight of 23,000 (polystyrene conversion) measured by gel permeation chromatography (GPC). <Production Example B7> ((A) Synthesis of polymer G as phenol resin) In a separable flask with a volume of 0.5 L and equipped with a Dean-Stark apparatus, 128.3 g (0.76 mol) of methyl 3,5-dihydroxybenzoate, 121.2 g (0.5 mol) of 4,4'-bis(methoxymethyl)biphenyl (hereinafter also referred to as "BMMB"), 3.9 g (0.025 mol) of diethylsulfate, and 140 g of diethylene glycol dimethyl ether were mixed and stirred at 70°C to dissolve the solid matter. The mixed solution was heated to 140°C in an oil bath, and methanol was confirmed to be generated from the reaction solution. The reaction solution was stirred at 140°C for 2 hours. Then, the reaction vessel was cooled in the atmosphere, and 100 g of tetrahydrofuran was added thereto and stirred. The above reaction dilution was added dropwise to 4 L of water under high-speed stirring to disperse and precipitate the resin, which was recovered, washed with water appropriately, and vacuum dried after dehydration to obtain a copolymer containing 3,5-dihydroxybenzoic acid methyl ester/BMMB (polymer G) with a yield of 70%. The weight average molecular weight of the polymer G calculated by the standard polystyrene conversion by the GPC method was 21,000. <Production Example B8> ((A) Synthesis of polymer H as phenol resin) A 1.0 L separable flask with a Dean-Stark apparatus was replaced with nitrogen, and then 81.3 g (0.738 mol) of resorcinol, 84.8 g (0.35 mol) of BMMB, 3.81 g (0.02 mol) of p-toluenesulfonic acid, and 116 g of propylene glycol monomethyl ether (hereinafter also referred to as PGME) were mixed and stirred at 50°C in the separable flask to dissolve the solids. The mixed solution was heated to 120°C in an oil bath, and methanol was confirmed to be generated from the reaction solution. The reaction solution was stirred at 120°C for 3 hours. Then, in another container, 24.9 g (0.150 mol) of 2,6-bis(hydroxymethyl)-p-cresol and 249 g of PGME were mixed and stirred to uniformly dissolve, and the obtained solution was dripped into the separable flask using a dropping funnel over a period of 1 hour, and then stirred for 2 hours. After the reaction was completed, the same treatment as in Preparation Example B7 was performed to obtain a copolymer (polymer H) containing resorcinol/BMMB/2,6-bis(hydroxymethyl)-p-cresol with a yield of 77%. The weight average molecular weight of the polymer H calculated by standard polystyrene conversion by GPC method was 9,900. <Example B1> A negative photosensitive resin composition was prepared using polymers A and B by the following method, and the prepared photosensitive resin composition was evaluated. 50 g of polymer A and 50 g of polymer B (equivalent to (A) resin) as polyimide precursors, 0.5 g of dicyclohexylthiourea (equivalent to (B) sulfur-containing compound), 4 g of 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)-oxime (referred to as "PDO" in Table 2) (equivalent to (C) photosensitizer), 8 g of tetraethylene glycol dimethacrylate, and 1.5 g of N-[3-(triethoxysilyl)propyl]phthalamide were dissolved in a mixed solvent containing 80 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) and 20 g of ethyl lactate. By further adding a small amount of the above-mentioned mixed solvent, the viscosity of the obtained solution is adjusted to about 35 poise to prepare a negative photosensitive resin composition. The composition is cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer is evaluated, and a result of 5.5% is obtained. <Example B2> In the above-mentioned Example B1, the addition amount of dicyclohexylthiourea as component (B) is changed to 0.1 g. Except for this, a negative photosensitive resin composition solution is prepared in the same manner as Example B1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 6.9% was obtained. <Example B3> In the above Example B1, the amount of dicyclohexylthiourea added as component (B) was changed to 4 g. Otherwise, a negative photosensitive resin composition solution was prepared in the same manner as Example B1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.8% was obtained. <Example B4> In the above-mentioned Example B1, benzothiazole was used as the (B) component instead of dicyclohexylthiourea, and a negative photosensitive resin composition solution was prepared in the same manner as in Example B1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 7.3% was obtained. <Example B5> In the above-mentioned Example B1, rhodanine was used as the (B) component instead of dicyclohexylthiourea, and a negative photosensitive resin composition solution was prepared in the same manner as in Example B1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated and a result of 7.2% was obtained. Instead of dicyclohexylthiourea, a negative photosensitive resin composition solution was prepared in the same manner as in Example B1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 7.3% was obtained. <Example B7> A negative photosensitive resin composition solution was prepared in the same manner as in Example B1. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.9% was obtained. <Example B8> In the above-mentioned Example B1, as the (A) resin, 50 g of polymer A and 50 g of polymer B were changed to 100 g of polymer A, and as the (C) component, 4 g of PDO was changed to 2.5 g of 1,2-octanedione-1-{4-(phenylthio)-2-(O-benzoyl oxime)} (Irgacure OXE01 (manufactured by BASF, trade name)). A negative photosensitive resin composition solution was prepared in the same manner as in Example B1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 5.7% was obtained. <Example B9> In the above Example B1, a negative photosensitive resin composition solution was prepared in the same manner as in Example B1, except that 50 g of polymer A and 50 g of polymer B were replaced with 100 g of polymer A as the resin (A), 4 g of PDO was replaced with 2.5 g of 1,2-octanedione-1-{4-(phenylthio)-2-(O-benzoyl oxime)} (Irgacure OXE01 (manufactured by BASF, trade name)) as the component (C), and the solvent was replaced with 85 g of γ-butyrolactone and 15 g of dimethyl sulfoxide. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.6% was obtained. <Example B10> In the above Example B1, 50 g of polymer A and 50 g of polymer B were changed to 100 g of polymer C as the (A) resin. A negative photosensitive resin composition solution was prepared in the same manner as Example B1. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.9% was obtained. <Example B11> In the above-mentioned Example B1, as the (A) resin, 50 g of polymer A and 50 g of polymer B were changed to 100 g of polymer D. In addition, a negative photosensitive resin composition solution was prepared in the same manner as in Example B1. The composition was cured at 250°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 5.3% was obtained. <Example B12> Using polymer E, a positive photosensitive resin composition was prepared by the following method, and the prepared photosensitive resin composition was evaluated. 100 g of polymer E (equivalent to resin (A)) as a precursor of polyazole is reacted with the following formula (96): 15 g of a photosensitive diazoquinone compound (produced by Toyo Gosei Co., Ltd., equivalent to (C) photosensitive agent) (C1) containing 77% phenolic hydroxyl groups, 0.5 g of dicyclohexylthiourea (equivalent to (B) sulfur-containing compound), and 6 g of 3-tert-butoxycarbonylaminopropyltriethoxysilane were dissolved in 100 g of γ-butyrolactone (as solvent). A small amount of γ-butyrolactone was further added to adjust the viscosity of the obtained solution to about 20 poise to prepare a positive photosensitive resin composition. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.4% was obtained. <Example B13> In the above Example B12, except that 100 g of polymer E was replaced with 100 g of polymer F as the (A) resin, a positive photosensitive resin composition solution was prepared in the same manner as Example B12. The composition was cured at 250°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.5% was obtained. <Example B14> In the above-mentioned Example B12, as the (A) resin, 100 g of polymer E was replaced by 100 g of polymer G, and a positive photosensitive resin composition solution was prepared in the same manner as in Example B12. The composition was cured at 220°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer, and after a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 5.7% was obtained. <Example B15> In the above-mentioned Example B12, as the (A) resin, 100 g of polymer E was replaced by 100 g of polymer H, and a positive photosensitive resin composition solution was prepared in the same manner as in Example B12. The composition was cured at 220°C by the above method to produce a hardened relief pattern on the Cu layer. After a high temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.6% was obtained. <Comparative Example B1> In the composition of Example B1, dicyclohexylthiourea was not added. A negative photosensitive resin composition was prepared in the same manner as Example B1, and the same evaluation as Example B1 was performed. Since the (B) compound of the present invention was not contained, the evaluation result was 14.3%. <Comparative Example B2> In the composition of Example B11, except that dicyclohexylthiourea was not added, a negative photosensitive resin composition was prepared in the same manner as Example B11, and the same evaluation as Example B11 was performed. Since the (B) compound of the present invention was not contained, the evaluation result was 15.5%. <Comparative Example B3> In the composition of Example B12, except that dicyclohexylthiourea was not added, a positive photosensitive resin composition was prepared in the same manner as Example B12, and the same evaluation as Example B12 was performed. Since the (B) compound of the present invention was not contained, the evaluation result was 14.6%. The results of Examples B1 to 15 and Comparative Examples B1 to 3 are summarized in Table 2. Example C <Production Example C1> ((A) Synthesis of polymer A as a polyimide precursor) In a 2 L separable flask, 155.1 g of 4,4'-oxydiphthalic anhydride (ODPA) was placed, 131.2 g of 2-hydroxyethyl methacrylate (HEMA) and 400 ml of γ-butyrolactone were added and stirred at room temperature, and 81.5 g of pyridine was added while stirring to obtain a reaction mixture. After the exotherm generated by the reaction ended, the mixture was left to cool to room temperature for 16 hours. Next, under ice-cooling, a solution of 206.3 g of dicyclohexylcarbodiimide (DCC) dissolved in 180 ml of γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring, and then 93.0 g of 4,4'-diaminodiphenyl ether (DADPE) suspended in 350 ml of γ-butyrolactone was added over 60 minutes while stirring. After stirring at room temperature for 2 hours, 30 ml of ethanol was added and stirred for 1 hour, and then 400 ml of γ-butyrolactone was added. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution. The obtained reaction solution was added to 3 L of ethanol to generate a precipitate containing a crude polymer. The crude polymer generated was separated by filtration and dissolved in 1.5 L of tetrahydrofuran to obtain a crude polymer solution. The crude polymer solution obtained was added dropwise to 28 L of water to precipitate the polymer. The precipitate obtained was separated by filtration and then vacuum dried to obtain a powdered polymer (polymer A). The molecular weight of polymer A was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 20,000. In addition, the weight average molecular weight of the resin obtained in each production example C was measured by gel permeation chromatography (GPC) under the following conditions to obtain the weight average molecular weight calculated in terms of standard polystyrene. Pump: JASCO PU-980 Detector: JASCO RI-930 Column oven: JASCO CO-965 40°C Column: 2 Shodex KD-806M in series Mobile phase: 0.1 mol/L LiBr/NMP Flow rate: 1 ml/min. <Production Example C2> ((A) Synthesis of polymer B as a polyimide precursor) Polymer B was obtained by reacting in the same manner as in the above-mentioned Production Example C1, except that 147.1 g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) was used instead of 155.1 g of 4,4'-oxydiphthalic dianhydride (ODPA) in Production Example C1. The molecular weight of polymer B was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 22,000. <Production Example C3> ((A) Synthesis of polymer C as polyimide precursor) Polymer C was obtained by reacting in the same manner as the method described in the above Production Example C1, except that 147.8 g of 2,2'-bistrifluoromethyl-4,4'-diaminobiphenyl (TFMB) was used instead of 93.0 g of 4,4'-diaminodiphenyl ether (DADPE). The molecular weight of polymer C was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 21,000. <Production Example C4> ((A) Synthesis of polymer D as polyamide) (Synthesis of phthalic acid compound end-capping body AIPA-MO) In a 5 L separable flask, 543.5 g of 5-aminoisophthalic acid {hereinafter referred to as AIPA} and 1700 g of N-methyl-2-pyrrolidone were added, mixed and stirred, and heated to 50°C in a water bath. 512.0 g (3.3 mol) of 2-methacryloyloxyethyl isocyanate diluted with 500 g of γ-butyrolactone was added dropwise using a dropping funnel, and the mixture was stirred at 50°C for about 2 hours. After confirming the completion of the reaction (disappearance of 5-aminoisophthalic acid) by low molecular weight gel permeation chromatography (hereinafter referred to as low molecular weight GPC), the reaction solution was put into 15 L of ion exchange water, stirred, and allowed to stand. After the crystallization and precipitation of the reaction product, it was filtered and separated. After appropriate water washing, it was vacuum dried at 40°C for 48 hours to obtain AIPA-MO obtained by the reaction of the amino group of 5-aminoisophthalic acid with the isocyanate group of 2-methylacryloyloxyethyl isocyanate. The low molecular weight GPC purity of the obtained AIPA-MO was about 100%. (Synthesis of Polymer D) Into a 2 L separable flask were placed 100.89 g (0.3 mol) of the obtained AIPA-MO, 71.2 g (0.9 mol) of pyridine, and 400 g of GBL, the mixture was mixed, and the mixture was cooled to 5° C. in an ice bath. Under ice-cooling, 125.0 g (0.606 mol) of dicyclohexylcarbodiimide (DCC) dissolved and diluted in 125 g of GBL was added dropwise over about 20 minutes, and then 103.16 g (0.28 mol) of 4,4'-bis(4-aminophenoxy)biphenyl {hereinafter referred to as BAPB} was added dropwise over about 20 minutes. The temperature did not reach 5° C. for 3 hours in an ice bath, and then the ice bath was removed and stirred at room temperature for 5 hours. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution. A mixture of 840 g of water and 560 g of isopropanol was added dropwise to the obtained reaction solution to separate the precipitated polymer, which was then redissolved in 650 g of NMP. The obtained crude polymer solution was added dropwise to 5 L of water to precipitate the polymer. The obtained precipitate was filtered and separated, and then vacuum dried to obtain a powdered polymer (polymer E). The molecular weight of polymer D was determined by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 34,700. <Production Example C5> ((A) Synthesis of polymer E as a precursor of polyoxazole) In a 3 L separable flask, 183.1 g of 2,2-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane, 640.9 g of N,N-dimethylacetamide (DMAc), and 63.3 g of pyridine were mixed and stirred at room temperature (25°C) to prepare a uniform solution. 118.0 g of 4,4'-diphenylether dimethyl chloride dissolved in 354 g of diethylene glycol dimethyl ether (DMDG) was added dropwise using a dropping funnel. At this time, the separable flask was cooled in a water bath at 15-20°C. The time required for the dropping was 40 minutes, and the maximum reaction liquid temperature was 30°C. Three hours after the dripping was completed, 30.8 g (0.2 mol) of 1,2-cyclohexyl dicarboxylic anhydride was added to the reaction solution, and the mixture was stirred at room temperature for 15 hours to end the amine terminal groups of the polymer chain, which accounted for 99% of the total number, with carboxyl cyclohexylamide groups. The reaction rate at this time can be easily calculated by tracking the residual amount of 1,2-cyclohexyl dicarboxylic anhydride added by high performance liquid chromatography (HPLC). Thereafter, the reaction solution was added dropwise to 2 L of water under high-speed stirring to disperse and precipitate the polymer, which was recovered, appropriately washed with water, dehydrated, and then vacuum dried to obtain a crude polybenzoxazole precursor having a weight average molecular weight of 9,000 (polystyrene conversion) as measured by gel permeation chromatography (GPC). The crude polybenzoxazole precursor obtained above was redissolved in γ-butyrolactone (GBL), treated with a cation exchange resin and an anion exchange resin, and the solution obtained was put into ion exchange water, and the precipitated polymer was separated by filtration, washed with water, and vacuum dried to obtain a purified polybenzoxazole precursor (polymer E). <Production Example C6> ((A) Synthesis of Polymer F as Polyimide) A glass separable four-necked flask equipped with a Teflon (registered trademark) anchor-type stirrer was equipped with a cooling tube with a Dean-Stark separator. The flask was immersed in a silicone oil bath and stirred while nitrogen was introduced. 72.28 g (280 mmol) of 2,2-bis(3-amino-4-hydroxyphenyl)propane (manufactured by Clariant Japan) (hereinafter referred to as BAP), 70.29 g (266 mmol) of 5-(2,5-dioxotetrahydro-3-furyl)-3-methyl-cyclohexene-1,2-dicarboxylic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) (hereinafter referred to as MCTC), 254.6 g of γ-butyrolactone, and 60 g of toluene were added, and the mixture was stirred at 100 rpm at room temperature for 4 hours. Then, 4.6 g (28 mmol) of 5-northoxene-2,3-dicarboxylic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) was added, and the mixture was heated and stirred at 100 rpm at a silicon bath temperature of 50° C. for 8 hours while nitrogen was passed through. Then, heat to a silica bath temperature of 180°C and heat and stir at 100 rpm for 2 hours. Remove the toluene and water expelled during the reaction. After the imidization reaction is completed, return to room temperature. Then, add the above reaction solution dropwise to 3 L of water under high-speed stirring to disperse and precipitate the polymer, recover it, wash it with appropriate water, dehydrate it, and then vacuum dry it to obtain a crude polyimide (polymer F) with a weight average molecular weight of 23,000 (polystyrene conversion) measured by gel permeation chromatography (GPC). <Production Example C7> ((A) Synthesis of polymer G as phenol resin) In a separable flask with a volume of 0.5 L and equipped with a Dean-Stark apparatus, 128.3 g (0.76 mol) of methyl 3,5-dihydroxybenzoate, 121.2 g (0.5 mol) of 4,4'-bis(methoxymethyl)biphenyl (hereinafter also referred to as "BMMB"), 3.9 g (0.025 mol) of diethylsulfate, and 140 g of diethylene glycol dimethyl ether were mixed and stirred at 70°C to dissolve the solid matter. The mixed solution was heated to 140°C in an oil bath, and methanol was confirmed to be generated from the reaction solution. The reaction solution was stirred at 140°C for 2 hours. Then, the reaction vessel was cooled in the atmosphere, and 100 g of tetrahydrofuran was added thereto and stirred. The above reaction dilution was added dropwise to 4 L of water under high-speed stirring to disperse and precipitate the resin, which was recovered, washed with water appropriately, and vacuum dried after dehydration to obtain a copolymer containing 3,5-dihydroxybenzoic acid methyl ester/BMMB (polymer G) with a yield of 70%. The weight average molecular weight of the polymer G calculated by the standard polystyrene conversion by the GPC method was 21,000. <Production Example C8> ((A) Synthesis of polymer H as phenol resin) A 1.0 L separable flask equipped with a Dean-Stark apparatus was replaced with nitrogen, and then 81.3 g (0.738 mol) of resorcinol, 84.8 g (0.35 mol) of BMMB, 3.81 g (0.02 mol) of p-toluenesulfonic acid, and 116 g of propylene glycol monomethyl ether (hereinafter also referred to as PGME) were mixed and stirred at 50°C in the separable flask to dissolve the solids. The mixed solution was heated to 120°C in an oil bath, and methanol was confirmed to be generated from the reaction solution. The reaction solution was stirred at 120°C for 3 hours. Then, 24.9 g (0.150 mol) of 2,6-bis(hydroxymethyl)-p-cresol and 249 g of PGME were mixed and stirred in another container to make them uniformly dissolved, and the obtained solution was dripped into the separable flask using a dropping funnel over a period of 1 hour, and then stirred for 2 hours. After the reaction was completed, the same treatment as in Preparation Example C7 was performed to obtain a copolymer (polymer H) containing resorcinol/BMMB/2,6-bis(hydroxymethyl)-p-cresol with a yield of 77%. The weight average molecular weight of the polymer H calculated by the standard polystyrene conversion by the GPC method was 9,900. <Example C1> A negative photosensitive resin composition was prepared using polymers A and B by the following method, and the prepared photosensitive resin composition was evaluated. 50 g of polymer A and 50 g of polymer B (equivalent to (A) resin) as polyimide precursors, 1 g of butyl urea (equivalent to (B-1) compound), 4 g of 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)-oxime (referred to as "PDO" in Table 3) (equivalent to (C) photosensitive agent), 8 g of tetraethylene glycol dimethacrylate, and 1.5 g of N-[3-(triethoxysilyl)propyl]phthalamide were dissolved in a mixed solvent containing 80 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) and 20 g of ethyl lactate. By further adding a small amount of the above-mentioned mixed solvent, the viscosity of the obtained solution is adjusted to about 35 poise to prepare a negative photosensitive resin composition. The composition is cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer is evaluated, and a result of 5.5% is obtained. <Example C2> In the above-mentioned Example C1, the amount of butyl urea added as component (B) is changed to 0.1 g. Except for this, a negative photosensitive resin composition solution is prepared in the same manner as Example C1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 6.8% was obtained. <Example C3> In the above Example C1, the amount of butyl urea added as component (B) was changed to 5 g. Otherwise, a negative photosensitive resin composition solution was prepared in the same manner as Example C1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.8% was obtained. <Example C4> In the above-mentioned Example C1, as the (B) component, tetraethylene glycol (equivalent to the (B-2) compound) was used instead of butyl urea, and a negative photosensitive resin composition solution was prepared in the same manner as in Example C1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 6.2% was obtained. <Example C5> In the above-mentioned Example C1, as the (B) component, bis(2-methoxyethyl) adipate (equivalent to the (B-3) compound) was used instead of butyl urea, and a negative photosensitive resin composition solution was prepared in the same manner as in Example C1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 6.3% was obtained. <Example C6> A negative photosensitive resin composition solution was prepared in the same manner as in Example C1. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.7% was obtained. <Example C7> In the above-mentioned Example C1, as the (A) resin, 50 g of polymer A and 50 g of polymer B were changed to 100 g of polymer A, and as the (C) component, 4 g of PDO was changed to 2.5 g of 1,2-octanedione-1-{4-(phenylthio)-2-(O-benzoyl oxime)} (Irgacure OXE01 (manufactured by BASF, trade name)). A negative photosensitive resin composition solution was prepared in the same manner as in Example C1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 5.4% was obtained. <Example C8> In the above Example C1, a negative photosensitive resin composition solution was prepared in the same manner as in Example C1, except that 50 g of polymer A and 50 g of polymer B were replaced with 100 g of polymer A as the (A) resin, 4 g of PDO was replaced with 2.5 g of 1,2-octanedione-1-{4-(phenylthio)-2-(O-benzoyl oxime)} (Irgacure OXE01 (manufactured by BASF, trade name)) as the (C) component, and the solvent was replaced with 85 g of γ-butyrolactone and 15 g of dimethyl sulfoxide. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.5% was obtained. <Example C9> In the above Example C1, 50 g of polymer A and 50 g of polymer B were changed to 100 g of polymer C as the (A) resin. A negative photosensitive resin composition solution was prepared in the same manner as Example C1. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.7% was obtained. <Example C10> In the above-mentioned Example C1, a negative photosensitive resin composition solution was prepared in the same manner as in Example C1 except that 50 g of polymer A and 50 g of polymer B were replaced with 100 g of polymer D as the (A) resin. The composition was cured at 250°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 5.8% was obtained. <Example C11> Using polymer E, a positive photosensitive resin composition was prepared by the following method, and the prepared photosensitive resin composition was evaluated. 100 g of polymer E (equivalent to resin (A)) as a precursor of polyazole is reacted with the following formula (96): 15 g of a photosensitive diazoquinone compound (produced by Toyo Gosei Co., Ltd., equivalent to (C) photosensitive agent) (C1) containing 77% phenolic hydroxyl groups, 1 g of butyl urea (equivalent to (B-1) compound), and 6 g of 3-tert-butoxycarbonylaminopropyltriethoxysilane were dissolved in 100 g of γ-butyrolactone (as a solvent). A small amount of γ-butyrolactone was further added to adjust the viscosity of the obtained solution to about 20 poise to prepare a positive photosensitive resin composition. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.6% was obtained. <Example C12> In the above Example C11, a positive photosensitive resin composition solution was prepared in the same manner as Example C11, except that 100 g of polymer E was replaced with 100 g of polymer F as the (A) resin. The composition was cured at 250°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.9% was obtained. <Example C13> In the above-mentioned Example C11, as the (A) resin, 100 g of polymer E was replaced by 100 g of polymer G, and a positive photosensitive resin composition solution was prepared in the same manner as in Example C11. The composition was cured at 220°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer, and after a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 5.5% was obtained. <Example C14> In the above-mentioned Example C11, as the (A) resin, 100 g of polymer E was replaced by 100 g of polymer H, and a positive photosensitive resin composition solution was prepared in the same manner as in Example C13. The composition was cured at 220°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.4% was obtained. <Comparison Example C1> In the composition of Example C1, butyl urea was not added. Otherwise, a negative photosensitive resin composition was prepared in the same manner as Example C1, and the same evaluation as Example C1 was performed. Since the (B) compound of the present invention is not contained, the evaluation result is 14.3%. <Comparison Example C2> In the composition of Example C12, butyl urea was not added. Otherwise, a positive photosensitive resin composition was prepared in the same manner as Example C12, and the same evaluation as Example C12 was performed. Since the compound (B) of the present invention is not contained, the evaluation result is 15.5%. <Comparative Example C3> In the composition of Example C13, butyl urea is not added. Except for this, a positive photosensitive resin composition is prepared in the same manner as Example C13, and the same evaluation as Example C11 is performed. Since the compound (B) of the present invention is not contained, the evaluation result is 15.7%. Example D <Production Example D1> (Synthesis of polymer (A)-1 as a precursor of polyimide) 155.1 g of 4,4'-oxydiphthalic anhydride (ODPA) was placed in a 2 L separable flask, 131.2 g of 2-hydroxyethyl methacrylate (HEMA) and 400 ml of γ-butyrolactone were added and stirred at room temperature, and 81.5 g of pyridine was added while stirring to obtain a reaction mixture. After the exotherm generated by the reaction ended, the mixture was left to cool to room temperature for 16 hours. Next, under ice-cooling, a solution of 206.3 g of dicyclohexylcarbodiimide (DCC) dissolved in 180 ml of γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring, and then 93.0 g of 4,4'-diaminodiphenyl ether (DADPE) suspended in 350 ml of γ-butyrolactone was added over 60 minutes while stirring. After stirring at room temperature for 2 hours, 30 ml of ethanol was added and stirred for 1 hour, and then 400 ml of γ-butyrolactone was added. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution. The obtained reaction solution was added to 3 L of ethanol to generate a precipitate containing a crude polymer. The crude polymer generated was separated by filtration and dissolved in 1.5 L of tetrahydrofuran to obtain a crude polymer solution. The crude polymer solution obtained was added dropwise to 28 L of water to precipitate the polymer. The precipitate obtained was separated by filtration and then vacuum dried to obtain a powdered polymer (polymer (A)-1). The molecular weight of polymer (A)-1 was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 20,000. In addition, the weight average molecular weight of the resin obtained in each production example D was measured by gel permeation chromatography (GPC) under the following conditions to obtain the weight average molecular weight calculated in terms of standard polystyrene. Pump: JASCO PU-980 Detector: JASCO RI-930 Column oven: JASCO CO-965 40°C Column: 2 Shodex KD-806M in series Mobile phase: 0.1 mol/L LiBr/NMP Flow rate: 1 ml/min. <Production Example D2> ((A) Synthesis of polymer (A)-2 as polyimide precursor) Polymer (A)-2 was obtained by reacting in the same manner as in the above-mentioned Production Example D1 except that 147.1 g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) was used instead of 155.1 g of 4,4'-oxydiphthalic dianhydride (ODPA) in Production Example D1. The molecular weight of polymer (A)-2 was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 22,000. <Production Example D3> ((A) Synthesis of polymer (A)-3 as polyimide precursor) Polymer (A)-3 was obtained by reacting in the same manner as in the above-mentioned Production Example D1 except that 147.8 g of 2,2'-bistrifluoromethyl-4,4'-diaminobiphenyl (TFMB) was used instead of 93.0 g of 4,4'-diaminodiphenyl ether (DADPE). The molecular weight of polymer (A)-3 was measured by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 21,000. <Production Example D4> ((A) Synthesis of polymer (A)-4 as polyamide) (Synthesis of phthalic acid compound end-capping body AIPA-MO) In a 5 L separable flask, 543.5 g of 5-aminoisophthalic acid {hereinafter referred to as AIPA} and 1700 g of N-methyl-2-pyrrolidone were added, mixed and stirred, and heated to 50°C in a water bath. 512.0 g (3.3 mol) of 2-methacryloyloxyethyl isocyanate diluted with 500 g of γ-butyrolactone was added dropwise using a dropping funnel, and the mixture was stirred at 50°C for about 2 hours. After confirming the completion of the reaction (disappearance of 5-aminoisophthalic acid) by low molecular weight gel permeation chromatography (hereinafter referred to as low molecular weight GPC), the reaction solution was put into 15 L of ion exchange water, stirred, and allowed to stand. After the crystallization and precipitation of the reaction product, it was filtered and separated. After appropriate water washing, it was vacuum dried at 40°C for 48 hours to obtain AIPA-MO obtained by the reaction of the amino group of 5-aminoisophthalic acid with the isocyanate group of 2-methylacryloyloxyethyl isocyanate. The low molecular weight GPC purity of the obtained AIPA-MO was about 100%. (Synthesis of Polymer (A)-4) Into a 2 L separable flask were placed 100.89 g (0.3 mol) of the obtained AIPA-MO, 71.2 g (0.9 mol) of pyridine, and 400 g of GBL, the mixture was mixed, and the mixture was cooled to 5° C. in an ice bath. Under ice-cooling, 125.0 g (0.606 mol) of dicyclohexylcarbodiimide (DCC) dissolved and diluted in 125 g of GBL was added dropwise over about 20 minutes, and then 103.16 g (0.28 mol) of 4,4'-bis(4-aminophenoxy)biphenyl {hereinafter referred to as BAPB} was added dropwise over about 20 minutes. The temperature did not reach 5° C. for 3 hours in an ice bath, and then the ice bath was removed and stirred at room temperature for 5 hours. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution. A mixture of 840 g of water and 560 g of isopropyl alcohol was added dropwise to the obtained reaction solution to separate the precipitated polymer, which was then redissolved in 650 g of NMP. The obtained crude polymer solution was added dropwise to 5 L of water to precipitate the polymer. The obtained precipitate was filtered and separated, and then vacuum dried to obtain a powdered polymer (polymer (A)-4). The molecular weight of polymer (A)-4 was determined by gel permeation chromatography (standard polystyrene conversion), and the weight average molecular weight (Mw) was 34,700. <Production Example D5> ((A) Synthesis of polymer (A)-5 as a precursor of polyoxazole) In a 3 L separable flask, 183.1 g of 2,2-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane, 640.9 g of N,N-dimethylacetamide (DMAc), and 63.3 g of pyridine were mixed and stirred at room temperature (25°C) to prepare a uniform solution. 118.0 g of 4,4'-diphenylether dimethyl chloride dissolved in 354 g of diethylene glycol dimethyl ether (DMDG) was added dropwise using a dropping funnel. At this time, the separable flask was cooled in a water bath at 15-20°C. The dripping time was 40 minutes, and the maximum temperature of the reaction liquid was 30°C. Three hours after the dripping was completed, 30.8 g (0.2 mol) of 1,2-cyclohexyl dicarboxylic anhydride was added to the reaction liquid, and the mixture was stirred at room temperature for 15 hours to end the amine terminal groups of 99% of the polymer chain with carboxyl cyclohexylamide groups. The reaction rate at this time can be easily calculated by tracking the residual amount of 1,2-cyclohexyl dicarboxylic anhydride added by high performance liquid chromatography (HPLC). Thereafter, the reaction solution was added dropwise to 2 L of water under high-speed stirring to disperse and precipitate the polymer, which was recovered, appropriately washed with water, dehydrated, and then vacuum dried to obtain a crude polybenzoxazole precursor having a weight average molecular weight of 9,000 (polystyrene conversion) as measured by gel permeation chromatography (GPC). The crude polybenzoxazole precursor obtained above was redissolved in γ-butyrolactone (GBL), treated with a cation exchange resin and an anion exchange resin, and the solution obtained was put into ion exchange water, and the precipitated polymer was separated by filtration, washed with water and vacuum dried to obtain a purified polybenzoxazole precursor (polymer (A)-5). <Production Example D6> ((A) Synthesis of Polymer (A)-6 as Polyimide) A glass separable four-necked flask equipped with a Teflon (registered trademark) anchor-type stirrer was equipped with a cooling tube with a Dean-Stark separator. While nitrogen was introduced, the flask was immersed in a silicone oil bath and stirred. 72.28 g (280 mmol) of 2,2-bis(3-amino-4-hydroxyphenyl)propane (manufactured by Clariant Japan) (hereinafter referred to as BAP), 70.29 g (266 mmol) of 5-(2,5-dioxotetrahydro-3-furyl)-3-methyl-cyclohexene-1,2-dicarboxylic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) (hereinafter referred to as MCTC), 254.6 g of γ-butyrolactone, and 60 g of toluene were added, and the mixture was stirred at 100 rpm at room temperature for 4 hours. Then, 4.6 g (28 mmol) of 5-northoxene-2,3-dicarboxylic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) was added, and the mixture was heated and stirred at 100 rpm at a silicon bath temperature of 50° C. for 8 hours while nitrogen was passed through. Thereafter, heat to a silica bath temperature of 180°C and heat and stir at 100 rpm for 2 hours. Remove the toluene and water expelled during the reaction. After the imidization reaction is completed, return to room temperature. Thereafter, add the above reaction solution dropwise into 3 L of water under high-speed stirring to disperse and precipitate the polymer, recover it, wash it with appropriate water, dehydrate it, and then vacuum dry it to obtain a crude polyimide (polymer (A)-6) with a weight average molecular weight of 23,000 (polystyrene conversion) as measured by gel permeation chromatography (GPC). <Example D1> Use polymers (A)-1 and (A)-2 to prepare a negative photosensitive resin composition by the following method, and evaluate the photosensitive resin composition. 50 g of polymer (A)-1 and 50 g of (A)-2 (equivalent to (A) resin) as polyimide precursors, 3 g of N-phenylbenzylamine (produced by Tokyo Chemical Industry Co., Ltd., equivalent to (B)-1), 4 g of 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)-oxime (referred to as "PDO" in Table 4) (equivalent to (C) photosensitive agent), 8 g of tetraethylene glycol dimethacrylate, and 1.5 g of N-[3-(triethoxysilyl)propyl]phthalamide were dissolved in a mixed solvent containing 80 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) and 20 g of ethyl lactate. By further adding a small amount of the above-mentioned mixed solvent, the viscosity of the obtained solution was adjusted to about 35 poise to prepare a negative photosensitive resin composition. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated and a result of 4.5% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D2> In the above-mentioned Example D1, component (B) was replaced with N,N'-diphenylethane-1,2-diamine (manufactured by Tokyo Chemical Industry Co., Ltd.), and a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 4.2% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D3> In the above-mentioned Example D1, the component (B) was replaced with tert-butylphenyl carbamate (manufactured by Tokyo Chemical Industry Co., Ltd.), and a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.1% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D4> In the above-mentioned Example D1, except that the component (B) was changed to (3-hydroxyphenyl) carbamate tert-butyl ester (manufactured by Tokyo Chemical Industry Co., Ltd.), a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.8% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D5> In the above-mentioned Example D1, component (B) was replaced with 2-hydroxy-N-(1H-1,2,4-triazole-3-yl)benzamide (produced by ADEKA Co., Ltd., Adekastab CDA-1). In addition, a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 4.8% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D6> In the above-mentioned Example D1, component (B) was replaced with 2-(2H-benzo[d][1,2,3]triazole-2-yl)-4-(2,4,4-trimethylpentane-2-yl)phenol (Adekastab LA-29 manufactured by ADEKA Co., Ltd.), and a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 4.2% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D7> In the above-mentioned Example D1, component (B) was replaced with (4-((1H-1,2,4-triazol-1-yl)methyl)phenyl)methanol (manufactured by Tokyo Chemical Industry Co., Ltd.), and a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 6.1% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D8> In the above-mentioned Example D1, the amount of component (B)-1 added was changed to 1 g, and a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. The composition was cured at 230°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 8.5% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D9> In the above-mentioned Example D1, the amount of component (B)-1 added was changed to 6 g, and a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. The composition was cured at 230°C by the above method to produce a hardened relief pattern on the Cu layer. After a high temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.9% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D10> In the above Example D1, the addition amount of the (B)-1 component was changed to 10 g, and a negative photosensitive resin composition solution was prepared in the same manner as Example D1. For the composition, curing at 230°C was performed by the above method to produce a hardened embossed pattern on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.0% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D11> In the above-mentioned Example D1, the curing temperature was changed from 230°C to 350°C. Except for this, a negative photosensitive resin composition solution was prepared in the same manner as Example D1. For the composition, a hardened embossed pattern was produced on the Cu layer. After a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 6.1% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D12> In the above Example D1, as the (A) resin, 50 g of polymer (A)-1 and 50 g of polymer (A)-2 were changed to 100 g of polymer (A)-1, and (C) component was changed from PDO to 2.5 g of 1,2-octanedione-1-{4-(phenylthio)-2-(O-benzoyl oxime)} (Irgacure OXE01 (manufactured by BASF, trade name)), and a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. With respect to the composition, a hardened embossed pattern was prepared on a Cu layer, and after a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.8% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D13> In the above-mentioned Example D12, the solvent was changed to 85 g of γ-butyrolactone and 15 g of dimethyl sulfoxide. In addition, a negative photosensitive resin composition solution was prepared in the same manner as Example D12. With respect to the composition, a hardened embossed pattern was prepared on a Cu layer, and after a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 5.4% was obtained. Furthermore, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D14> In the above-mentioned Example D1, as the (A) resin, 50 g of polymer (A)-1 and 50 g of polymer (A)-2 were changed to 100 g of polymer (A)-3, and the curing temperature was changed from 230°C to 350°C. In addition, a negative photosensitive resin composition solution was prepared in the same manner as Example D1. For the composition, a hardened relief pattern was made on the Cu layer, and after a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 7.2% was obtained. Furthermore, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D15> In the above-mentioned Example D1, as the (A) resin, 50 g of polymer (A)-1 and 50 g of polymer (A)-2 were replaced with 100 g of polymer (A)-4. In addition, a negative photosensitive resin composition solution was prepared in the same manner as in Example D1. A hardened relief pattern was made on the Cu layer with the composition, and after a high-temperature storage test, the area ratio of the voids on the surface of the Cu layer was evaluated, and a result of 4.9% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D16> A positive photosensitive resin composition was prepared by the following method using polymer (A)-5, and the prepared photosensitive resin composition was evaluated. 100 g of polymer (A)-5 (equivalent to (A) resin) as a polyazole precursor was mixed with the following formula (96): [Chemical 107] 15 g of a photosensitive diazoquinone compound (produced by Toyo Gosei Co., Ltd., equivalent to component (C)) (C1) containing 77% of phenolic hydroxyl groups esterified with naphthoquinone diazide-4-sulfonate was dissolved in 100 g of γ-butyrolactone (as a solvent). The viscosity of the obtained solution was adjusted to about 20 poise by further adding a small amount of γ-butyrolactone to prepare a positive photosensitive resin composition. The composition was cured at 350°C by the above method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated, and a result of 6.9% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Example D17> In the above-mentioned Example D16, except that 100 g of polymer (A)-5 was replaced with 100 g of polymer (A)-6 as the (A) resin, a positive photosensitive resin composition solution was prepared in the same manner as in Example D12. The composition was cured at 250°C by the above-mentioned method to produce a hardened relief pattern on the Cu layer. After a high-temperature storage test, the area ratio of voids on the surface of the Cu layer was evaluated and a result of 6.0% was obtained. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Comparative Example D1> In the composition of Example D1, except that component (B)-1 is not added, a negative photosensitive resin composition is prepared in the same manner as Example D1, and the same evaluation as Example D1 is performed. Since the component (B) of the present invention is not contained, the evaluation result is 15.2%. In addition, the viscosity change rate of the obtained varnish after the storage stability test is within 10%. <Comparative Example D2> In the composition of Example D15, except that component (B)-1 is not added, a negative photosensitive resin composition is prepared in the same manner as Example D15, and the same evaluation as Example D15 is performed. Since the component (B) of the present invention is not contained, the evaluation result is 14.3%. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Comparative Example D3> In the composition of Example D13, except that the (B)-1 component was not added, a negative photosensitive resin composition was prepared in the same manner as Example D13, and the same evaluation as Example D13 was performed. Since the (B) component of the present invention was not contained, the evaluation result was 15.7%. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Comparative Example D4> In the composition of Example D17, except that the component (B)-1 was not added, a positive photosensitive resin composition was prepared in the same manner as Example D17, and the same evaluation as Example D17 was performed. Since the component (B) of the present invention was not contained, the evaluation result was 16.3%. In addition, the viscosity change rate of the obtained varnish after the storage stability test was within 10%. <Comparative Example D5> In the composition of Example D1, except that the addition amount of the component (B)-1 was changed to 25 g, a negative photosensitive resin composition was prepared in the same manner as Example D1, and the same evaluation as Example D1 was performed. The evaluation result was 7.2%. In addition, the viscosity change rate of the obtained varnish after the storage stability test was 10% or more. The results of Examples D1 to 17 and Comparative Examples D1 to 5 are summarized in Table 4. [Table 1] Table 1    Embodiment A1 Embodiment A2 Embodiment A3 Embodiment A4 Embodiment A5 Embodiment A6 Embodiment A7 Embodiment A8 Embodiment A9 Embodiment A10 Embodiment A11 Embodiment A12 Embodiment A13 Embodiment A14 Embodiment A15 Embodiment A16 Comparative Example A1 Comparative Example A2 Comparative Example A3 Comparative Example A4 Polymer A 50 50 50 50 50 50 50 50 100 100                   50 50 100    Polymer B 50 50 50 50 50 50 50 50                         50 50       Polymer C                               100                         100 Polymer D                                  100                         Polymer E                                     100                      Polymer F                                        100                   Polymer G                                           100                Polymer H                                              100             PDO 4 4 4 4 4 4 4 4       4 4             4 4    4 OXE01                         2.5 2.5                         2.5    C1                                     20 20 20 20             Xanthine 0.2 0.05 5             0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2             8-Azaxanthine          0.2                                                 Uric acid             0.2                                              2-Hydroxy-4-pteridine                0.2                                           Barbituric acid                   0.2                                        Benzotriazole                                                 0.2          N-Methylpyrrolidone 80 80 80 80 80 80 80 80 80    80 80             80 80    80 Ethyl lactate 20 20 20 20 20 20 20 20 20    20 20             20 20    20 γ-Butyrolactone                            85       100 100 100 100       85    Dimethyl sulfoxide                            15                         15    Curing temperature ℃ 230 230 230 230 230 230 230 350 230 230 350 250 350 250 220 220 230 230 230 350 Void area ratio of Cu surface % 5.2 6.4 4.9 5.1 5.4 5.5 7.3 4.5 5.1 5.2 4.9 5.0 5.5 5.7 5.3 5.2 15.2 14.3 15.7 14.9 [Table 2] Table 2    Embodiment B1 Embodiment B2 Embodiment B3 Embodiment B4 Embodiment B5 Embodiment B6 Embodiment B7 Embodiment B8 Embodiment B9 Embodiment B10 Embodiment B11 Embodiment B12 Embodiment B13 Embodiment B14 Embodiment B15 Comparative Example B1 Comparative Example B2 Comparative Example B3 Polymer A 50 50 50 50 50 50 50 100 100                   50       Polymer B 50 50 50 50 50 50 50                         50       Polymer C                            100                         Polymer D                               100                100    Polymer E                                  100                100 Polymer F                                     100                Polymer G                                        100             Polymer H                                           100          PDO 4 4 4 4 4 4 4       4 4             4 4    OXE01                      2.5 2.5                            C1                                  15 15 15 15       15 Dicyclohexylthiourea 0.5 0.1 4          0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5          Benzothiazole          0.5                                           Rhodanlin             0.5                                        2-9-Oxysulfuron                0.5                                     N-Methylpyrrolidone 80 80 80 80 80 80 80 80    80 80             80 80    Ethyl lactate 20 20 20 20 20 20 20 20    20 20             20 20    γ-Butyrolactone                         85       100 100 100 100       100 Dimethyl sulfoxide                         15                            Curing temperature ℃ 230 230 230 230 230 230 350 230 230 350 250 350 250 220 220 230 250 350 Void area ratio of Cu surface% 5.5 6.9 4.8 7.3 7.2 7.3 4.9 5.7 5.6 4.9 5.3 5.4 5.5 5.7 5.6 14.3 15.5 14.6 [Table 3] Table 3    Embodiment C1 Embodiment C2 Embodiment C3 Embodiment C4 Embodiment C5 Example C6 Embodiment C7 Embodiment C8 Embodiment C9 Example C10 Example C11 Example C12 Example C13 Example C14 Comparison Example C1 Comparison Example C2 Comparison Example C3 Polymer A 50 50 50 50 50 50 100 100                   50       Polymer B 50 50 50 50 50 50                         50       Polymer C                         100                         Polymer D                            100                      Polymer E                               100                   Polymer F                                  100          100    Polymer G                                     100          100 Polymer H                                        100          PDO 4 4 4 4 4 4       4 4             4       OXE01                   2.5 2.5                            C1                               15 15 15 15    15 15 Butyl urea 1 0.1 5       1 1 1 1 1 1 1 1 1          Tetraethylene glycol          1                                        Bis(2-methoxyethyl) adipate             1                                     N-Methylpyrrolidone 80 80 80 80 80 80 80    80 80             80       Ethyl lactate 20 20 20 20 20 20 20    20 20             20       γ-Butyrolactone                      85       100 100 100 100    100 100 Dimethyl sulfoxide                      15                            Curing temperature ℃ 230 230 230 230 230 350 230 230 350 250 350 250 220 220 230 250 220 Void area ratio of Cu surface% 5.5 6.8 4.8 6.2 6.3 4.7 5.4 5.5 4.7 5.8 5.6 5.9 5.5 5.4 14.3 15.5 15.7 [Table 4] Table 4    Embodiment D1 Embodiment D2 Embodiment D3 Embodiment D4 Embodiment D5 Embodiment D6 Embodiment D7 Embodiment D8 Embodiment D9 Embodiment D10 Embodiment D11 (A) Ingredients (A)-1 50 50 50 50 50 50 50 50 50 50 50 (A)-2 50 50 50 50 50 50 50 50 50 50 50 (A)-3                                  (A)-4                                  (A)-5                                  (A)-6                                  (B) Ingredients (B)-1 3                   1       3 (B)-2    3                   6 10    (B)-3       3                         (B)-4          3                      (B)-5             3                   (B)-6                3                (B)-7                   3             (C) Ingredients PDO 4 4 4 4 4 4 4 4 4 4 4 OXE01                                  C1                                  Solvent N-Methylpyrrolidone 80 80 80 80 80 80 80 80 80 80 80 Ethyl lactate 20 20 20 20 20 20 20 20 20 20 20 γ-Butyrolactone                                  Dimethyl sulfoxide                                  Curing temperature ℃ 230 230 230 230 230 230 230 230 230 230 350 Void area ratio of Cu surface% 4.5 4.2 5.1 5.8 4.8 4.2 6.1 8.5 4.9 5.0 6.1 Varnish preservation stability ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○    Embodiment D12 Embodiment D13 Embodiment D14 Embodiment D15 Embodiment D16 Embodiment D17 Comparison Example D1 Comparative Example D2 Comparison Example D3 Comparative Example D4 Comparative Example D5 (A) Ingredients (A)-1 100 100             50    100    50 (A)-2                   50          50 (A)-3       100                         (A)-4          100          100          (A)-5             100                   (A)-6                100          100    (B) Ingredients (B)-1 3 3 3 3 3 3             25 (B)-2                                  (B)-3                                  (B)-4                                  (B)-5                                  (B)-6                                  (B)-7                                  (C) Ingredients PDO       4 4 4 4 4 4       4 OXE01 2.5 2.5                   2.5       C1             20 20          20    Solvent N-Methylpyrrolidone 80    80 80       80 80       80 Ethyl lactate 20    20 20       20 20       20 γ-Butyrolactone    85       100 100       85 100    Dimethyl sulfoxide    15                   15       Curing temperature ℃ 230 230 350 250 350 250 230 250 230 250 230 Void area ratio of Cu surface % 5.8 5.4 7.2 4.9 6.9 6.0 15.2 14.3 15.7 16.3 7.2 Varnish preservation stability ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ × [Industrial Applicability] The photosensitive resin composition of the present invention can be preferably used in the field of photosensitive materials useful for the production of electrical and electronic materials such as semiconductor devices and multilayer wiring boards.

Claims (6)

A photosensitive resin composition comprising: (A) a photosensitive resin selected from the group consisting of polyamic acid, polyamic acid ester, polyamic acid salt, polyhydroxyamide, polyaminoamide, polyamide, polyamide imide, polyimide, and polybenzoic acid;

At least one resin selected from the group consisting of azoles: 100 parts by weight; (B) an aromatic amine compound, which is an aniline derivative, or a first triazole derivative, or the following general formula (III):

At least one of the second triazole derivatives represented by {R _a11 to R _a13 which may be the same or different and are hydrogen atom or hydroxyl group, or a saturated alkyl group, unsaturated alkyl group, aromatic group or amide group having an integer of 1 to 15 carbon atoms}: 0.01 to 15 parts by weight based on 100 parts by weight of the resin (A); and (C) a photosensitizer: 0.01 to 15 parts by weight based on 100 parts by weight of the resin (A). The aniline derivative of the component (B) is selected from the group consisting of N-phenylbenzylamine, hydroxyaniline, naphthol AS, 2-acetamidofluorene, oxalylaniline, N-allylaniline, N-methylaniline, N-ethylaniline, indoline, N-n-butylaniline, 2-anilinoethanol, 4-methoxyacetylaniline, acetylacetylaniline, 1,2 ,3,4-tetrahydroquinoline, tert-butylphenyl carbamate, tert-butyl (3-hydroxyphenyl) carbamate, oxalylaniline, and N,N'-diphenylethane-1,2-diamine. The first triazole derivative of the component (B) is selected from 1-hydroxybenzotriazole, 1-aminobenzotriazole, 2-hydroxy-N-(1H-1 At least one of the group consisting of 2-(2H-benzo[d][1,2,3]triazol-2-yl)-4-(2,4,4-trimethylpentane-2-yl)phenol, 2-(2'-hydroxy-3',5'-di-tert-aminophenyl)benzotriazole, and 2-(2'-hydroxy-5'-methylphenyl)benzotriazole. The photosensitive resin composition of claim 1, wherein the resin (A) is selected from a polyimide precursor comprising the following general formula (1), a polyamide comprising the following general formula (4), a polyamide comprising the following general formula (5),

At least one of the group consisting of an azole precursor and a polyimide of the following general formula (6), wherein the following general formula (1) is

{wherein, X ₁ is a tetravalent organic group, Y ₁ is a divalent organic group, n ₁ is an integer of 2 to 150, and R ₁ and R ₂ are independently a hydrogen atom, a saturated aliphatic group having 1 to 30 carbon atoms, an aromatic group, or the following general formula (2):

(wherein R ₃ , R ₄ and R ₅ are independently a hydrogen atom or an organic group having 1 to 3 carbon atoms, and m ₁ is an integer of 2 to 10) a monovalent organic group represented by, or a saturated aliphatic group having 1 to 4 carbon atoms, or the following general formula (3):

(wherein R ₆ , R ₇ and R ₈ are independently hydrogen atoms or organic groups having 1 to 3 carbon atoms, and m ₂ is an integer of 2 to 10)} represented by a polyamide acid, polyamide ester or polyamide salt as a polyimide precursor, the following general formula (4) has

The polyamide having a structure represented by {wherein, X ₂ is a trivalent organic group having 6 to 15 carbon atoms, Y ₂ is a divalent organic group having 6 to 35 carbon atoms and may be of the same structure or have plural structures, R ₉ is an organic group having at least one free radical polymerizable unsaturated bond group having 3 to 20 carbon atoms, and n ₂ is an integer of 1 to 1000}, the following general formula (5) is

The structure represented by {wherein, Y ₃ is a tetravalent organic group having carbon atoms, Y ₄ , X ₃ and X ₄ are each independently a divalent organic group having 2 or more carbon atoms, n ₃ is an integer of 1 to 1000, n ₄ is an integer of 0 to 500, n ₃ /(n ₃ +n ₄ )>0.5, and the arrangement order of the n ₃ dihydroxy diamide units comprising X ₃ and Y ₃ and the n ₄ diamide units comprising X ₄ and Y ₄ is arbitrary} is a polymer

The polyhydroxyamide of the azole precursor, and the following general formula (6) is

A polyimide having a structure represented by {wherein, _X5 is a 4- to 14-valent organic group, _Y5 is a 2- to 12-valent organic group, _R10 and _R11 each independently represent an organic group having at least one group selected from a phenolic hydroxyl group, a sulfonic acid group or a thiol group, _n5 is an integer of 3 to 200, and _m3 and _m4 represent integers of 0 to 10}. The photosensitive resin composition of claim 1 or 2, wherein the second triazole derivative of the component (B) is selected from (4-((1H-1,2,4-triazol-1-ylmethyl)phenyl)methanol, 1,2,4-1H-triazole, chloranil, bidonone, 4-(1H-1,2,4-triazol-1-yl)benzaldehyde, 4-(1H-1,2,4-triazol-1-yl)benzoic acid, 3-(1H-1,2,4 At least one of the group consisting of 2-(1H-1,2,4-triazol-1-ylmethyl)benzoic acid, 4-[(1H-1,2,4-triazol-1-ylmethyl)phenyl]methanol, 3-(1H-1,2,4-triazol-1-yl)benzaldehyde, 3-(1H-1,2,4-triazol-1-ylmethyl)benzaldehyde, 3-(1H-1,2,4-triazol-1-yl)benzoic acid and 2-(1H-1,2,4-triazol-1-yl)aniline. The photosensitive resin composition of claim 1 or 2, wherein any of the amine atoms of the aniline derivative or triazole derivative constituting the above-mentioned component (B) is a diamine. A method for producing a hardened relief pattern, comprising: (1) forming a photosensitive resin layer on the substrate by coating a photosensitive resin composition as described in any one of claims 1 to 4 on the substrate; (2) exposing the photosensitive resin layer; (3) developing the exposed photosensitive resin layer to form a relief pattern; and (4) forming a hardened relief pattern by heating the relief pattern. As in the method of claim 5, wherein the substrate is formed of copper or a copper alloy.