TWI865891B - Oxide sintered body and its manufacturing method and sputtering target - Google Patents
Oxide sintered body and its manufacturing method and sputtering target Download PDFInfo
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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Abstract
本發明之氧化物燒結體含有錫元素、鉭元素及鈮元素。氧化物燒結體之截面觀察時之每單位面積之孔部之面積率為1%以下。氧化物燒結體之截面觀察時之孔部之最大圓相當徑為20 μm以下。氧化物燒結體之截面觀察時之孔部之最大費雷特直徑為50 μm以下。氧化物燒結體之基於阿基米德法測得之相對密度適宜為99.6%以上。氧化物燒結體之依據JIS R1601測得之抗彎強度適宜為180 MPa以上。The oxide sintered body of the present invention contains tin, tantalum and niobium. The area ratio of the pores per unit area when observing the cross section of the oxide sintered body is 1% or less. The maximum circle equivalent diameter of the pores when observing the cross section of the oxide sintered body is 20 μm or less. The maximum Feret diameter of the pores when observing the cross section of the oxide sintered body is 50 μm or less. The relative density of the oxide sintered body measured based on the Archimedean method is preferably 99.6% or more. The bending strength of the oxide sintered body measured in accordance with JIS R1601 is preferably 180 MPa or more.
Description
本發明係關於一種氧化物燒結體及其製造方法。又,本發明係關於一種包含氧化物燒結體之濺鍍靶材。The present invention relates to an oxide sintered body and a method for manufacturing the same. In addition, the present invention relates to a sputtering target material including the oxide sintered body.
氧化錫系透明導電膜被用於以液晶顯示器、電漿顯示器及有機EL(Electro-Luminescence,電致發光)等顯示裝置為代表之廣泛用途。作為形成氧化錫系透明導電膜之方法之一,已知有濺鍍。使用濺鍍之導電膜之形成中,若濺鍍靶材中存在大量針孔等缺陷,則會導致濺鍍中發生異常放電,亦會導致濺鍍過程中產生粒子、及靶材產生破裂或龜裂。Tin oxide transparent conductive films are used in a wide range of applications, represented by display devices such as liquid crystal displays, plasma displays, and organic EL (Electro-Luminescence). Sputtering is known as one of the methods for forming tin oxide transparent conductive films. In the formation of conductive films using sputtering, if there are a large number of defects such as pinholes in the sputtering target, abnormal discharge will occur during sputtering, and particles will be generated during the sputtering process, and the target will crack or crack.
為防止濺鍍中產生異常放電,本申請人先前揭示了一種濺鍍靶之製造方法,該方法係準備以SnO 2為主成分,且含有Nb 2O 5及Ta 2O 5之未燒結之成形體,並且於1550℃~1650℃下對該成形體進行燒結(參照專利文獻1)。出於同樣之目的,本申請人先前揭示了一種濺鍍靶,其含有Ta 2O 5、Nb 2O 5、作為剩餘部分之SnO 2、及不可避免之雜質(參照專利文獻2)。 [先前技術文獻] [專利文獻] In order to prevent abnormal discharge from occurring during sputtering, the present applicant previously disclosed a method for manufacturing a sputtering target, which method comprises preparing an unsintered molded body having SnO 2 as a main component and containing Nb 2 O 5 and Ta 2 O 5 , and sintering the molded body at 1550°C to 1650°C (see patent document 1). For the same purpose, the present applicant previously disclosed a sputtering target containing Ta 2 O 5 , Nb 2 O 5 , SnO 2 as a remainder, and unavoidable impurities (see patent document 2). [Prior art document] [Patent document]
專利文獻1:日本專利特開2007-131891號公報 專利文獻2:日本專利特開2008-248278號公報 Patent document 1: Japanese Patent Publication No. 2007-131891 Patent document 2: Japanese Patent Publication No. 2008-248278
根據專利文獻1及2中記載之技術,可抑制濺鍍過程中之異常放電及靶材之破裂。但是,要求使用氧化錫系透明導電膜之顯示裝置其性能之進一步提昇,對於氧化錫系透明導電膜亦要求更高品質者。因此,對於用於製造氧化錫系透明導電膜之濺鍍靶材,亦要求濺鍍過程中之異常放電及靶材之破裂之發生較先前減少之高品質者。 因此,本發明提供一種針孔等缺陷較少,且用作濺鍍靶材時不易發生異常放電及破裂之氧化物燒結體及其製造方法與濺鍍靶材。 According to the technology described in Patent Documents 1 and 2, abnormal discharge and target cracking during the sputtering process can be suppressed. However, the performance of the display device using the tin oxide-based transparent conductive film is required to be further improved, and the tin oxide-based transparent conductive film is also required to be of higher quality. Therefore, the sputtering target used to manufacture the tin oxide-based transparent conductive film is also required to be of high quality with fewer abnormal discharge and target cracking during the sputtering process than before. Therefore, the present invention provides an oxide sintered body with fewer defects such as pinholes, and which is not prone to abnormal discharge and cracking when used as a sputtering target, and a method for manufacturing the same, as well as a sputtering target.
本發明藉由提供一種氧化物燒結體來解決上述課題,該氧化物燒結體含有錫元素、鉭元素及鈮元素, 上述氧化物燒結體之截面觀察時之每單位面積之孔部之面積率為1%以下。 The present invention solves the above-mentioned problem by providing an oxide sintered body, which contains tin, tantalum and niobium. The area ratio of the pores per unit area when observing the cross section of the oxide sintered body is less than 1%.
又,本發明提供一種包含上述氧化物燒結體之濺鍍靶材。Furthermore, the present invention provides a sputtering target comprising the above-mentioned oxide sintered body.
進而,本發明提供一種氧化物燒結體之製造方法, 該方法係分別單獨製備錫氧化物之漿料、鉭氧化物之漿料及鈮氧化物之漿料, 將上述各漿料混合來製備混合漿料, 對上述混合漿料實施噴霧乾燥法來製造造粒物, 使用上述造粒物來製造成形體, 對上述成形體進行燒結; 上述錫氧化物之漿料、上述鉭氧化物之漿料及上述鈮氧化物之漿料中分別預先含有分散劑。 Furthermore, the present invention provides a method for manufacturing an oxide sintered body, The method comprises separately preparing a slurry of tin oxide, a slurry of tantalum oxide and a slurry of niobium oxide, Mixing the above slurries to prepare a mixed slurry, Applying a spray drying method to the above mixed slurry to produce a granulated product, Using the above granulated product to produce a molded body, Sintering the above molded body; The above slurry of tin oxide, the above slurry of tantalum oxide and the above slurry of niobium oxide each contain a dispersant in advance.
以下,基於較佳之實施方式來說明本發明。本發明係關於一種氧化物燒結體及使用其之濺鍍靶材。 本發明之氧化物燒結體為複數種金屬氧化物之燒結體。詳細而言,本發明之氧化物燒結體含有錫元素(以下亦簡稱為「Sn」)、鉭元素(以下亦簡稱為「Ta」)、及鈮元素(以下亦簡稱為「Nb」)作為金屬。該等金屬元素以各金屬之氧化物之狀態存在於燒結體中,或以選自該3種金屬元素之至少2種金屬元素之複合氧化物之狀態存在於燒結體中。 The present invention is described below based on a preferred embodiment. The present invention relates to an oxide sintered body and a sputtering target using the same. The oxide sintered body of the present invention is a sintered body of a plurality of metal oxides. Specifically, the oxide sintered body of the present invention contains tin element (hereinafter also referred to as "Sn"), tantalum element (hereinafter also referred to as "Ta"), and niobium element (hereinafter also referred to as "Nb") as metals. These metal elements exist in the sintered body in the form of oxides of each metal, or in the form of composite oxides of at least two metal elements selected from the three metal elements.
如上述專利文獻1所記載,由於SnO 2為難燒結性物質,故迄今為止難以製造含有SnO 2之緻密燒結體。因此,迄今所知之含有SnO 2之燒結體中易產生缺損部位即孔部。與之相對,本發明之氧化物燒結體之一特徵在於極度減少了孔部之存在。孔部為於本發明之氧化物燒結體之截面所觀察到之缺損部位。於本說明書中,氧化物燒結體之截面係指藉由規定方法切斷氧化物燒結體所得之面。 孔部於截面上開口,並向氧化物燒結體之內部延伸。孔部包含透孔及有底孔兩者。於本說明書中,孔部係指用顯微鏡以200倍之倍率(觀察視野:445.3 μm×634.6 μm)觀察氧化物燒結體之截面時確認到存在之大小之缺損部位。 As described in the above-mentioned patent document 1, since SnO2 is a difficult-to-sinter material, it has been difficult to produce a dense sintered body containing SnO2 . Therefore, the sintered bodies containing SnO2 known so far are prone to produce defective parts, namely pores. In contrast, one of the characteristics of the oxide sintered body of the present invention is that the existence of pores is greatly reduced. The pores are defective parts observed in the cross section of the oxide sintered body of the present invention. In this specification, the cross section of the oxide sintered body refers to the surface obtained by cutting the oxide sintered body by a prescribed method. The pores are open on the cross section and extend to the interior of the oxide sintered body. The pores include both through holes and bottomed holes. In this specification, the pore portion refers to a defect portion of a size confirmed to exist when a cross section of an oxide sintered body is observed with a microscope at a magnification of 200 times (observation field: 445.3 μm×634.6 μm).
本發明之氧化物燒結體中之孔部之存在程度極低,即該氧化物燒結體之截面觀察時之每單位面積之孔部之面積率(以下亦稱為「孔部面積率」)較佳為1%以下。由於孔部之存在程度如此低,故本發明之氧化物燒結體於例如用作濺鍍靶材之情形時,可有效抑制於濺鍍時發生異常放電。又,可有效防止濺鍍時產生粒子、及靶材發生破裂或龜裂。就使該等優點更加顯著之觀點而言,孔部面積率較佳為0.9%以下,更佳為0.8%以下,進而更佳為0.7%以下,尤佳為0.6%以下,特佳為0.5%以下。孔部面積率之值越接近零越佳。就該觀點而言,孔部面積率較佳為超過0%且1%以下,更佳為0.02%以上0.9%以下,進而較佳為0.04%以上0.8%以下,進而更佳為0.06%以上0.7%以下,尤佳為0.08%以上0.6%以下,特佳為0.1%以上0.5%以下。 孔部面積率之測定方法將於後述實施例中進行說明。又,亦於下文中闡述用於將孔部面積率設為上述值以下之方法。 The presence of pores in the oxide sintered body of the present invention is extremely low, that is, the area ratio of pores per unit area when observing the cross section of the oxide sintered body (hereinafter also referred to as "pore area ratio") is preferably 1% or less. Since the presence of pores is so low, the oxide sintered body of the present invention can effectively suppress abnormal discharge during sputtering when used as a sputtering target, for example. In addition, it can effectively prevent the generation of particles during sputtering and the cracking or cracking of the target. From the perspective of making these advantages more significant, the pore area ratio is preferably 0.9% or less, more preferably 0.8% or less, further preferably 0.7% or less, particularly preferably 0.6% or less, and particularly preferably 0.5% or less. The closer the value of the hole area ratio is to zero, the better. From this point of view, the hole area ratio is preferably more than 0% and less than 1%, more preferably 0.02% to 0.9%, further preferably 0.04% to 0.8%, further preferably 0.06% to 0.7%, particularly preferably 0.08% to 0.6%, and particularly preferably 0.1% to 0.5%. The method for determining the hole area ratio will be described in the embodiments described below. In addition, the method for setting the hole area ratio to a value below the above value is also described below.
本發明之氧化物燒結體之一特徵亦在於,當於其截面觀察到孔部之情形時,該孔部之大小得到了抑制。詳細而言,氧化物燒結體之截面觀察時之孔部之最大圓等效直徑極小,為20 μm以下。藉由如此抑制孔部之大小,本發明之氧化物燒結體於例如用作濺鍍靶材之情形時,可有效抑制於濺鍍時產生異常放電。又,可有效防止於濺鍍時產生粒子、及靶材發生破裂或龜裂。就使該等優點更加顯著之觀點而言,孔部之最大圓等效直徑較佳為18 μm以下,更佳為16 μm以下,進而更佳為15 μm以下,尤佳為13 μm以下,特佳為12 μm以下。孔部之最大圓等效直徑越接近零越佳。就該觀點而言,孔部之最大圓等效直徑較佳為超過0 μm且20 μm以下,進而較佳為1 μm以上18 μm以下,更佳為2 μm以上16 μm以下,進而更佳為3 μm以上15 μm以下,尤佳為4 μm以上13 μm以下,特佳為5 μm以上12 μm以下。 孔部之最大圓等效直徑之測定方法將於後述實施例中進行說明。又,亦於下文中闡述用於將孔部之最大圓等效直徑設為上述值以下之方法。 One of the characteristics of the oxide sintered body of the present invention is that when the pores are observed in its cross section, the size of the pores is suppressed. Specifically, the maximum circular equivalent diameter of the pores when the cross section of the oxide sintered body is observed is extremely small, being 20 μm or less. By suppressing the size of the pores in this way, the oxide sintered body of the present invention can effectively suppress abnormal discharge during sputtering when used as a sputtering target, for example. Furthermore, it can effectively prevent the generation of particles during sputtering and the cracking or crazing of the target. From the viewpoint of making these advantages more significant, the maximum circular equivalent diameter of the pores is preferably 18 μm or less, more preferably 16 μm or less, further preferably 15 μm or less, particularly preferably 13 μm or less, and particularly preferably 12 μm or less. The closer the maximum circular equivalent diameter of the hole is to zero, the better. From this point of view, the maximum circular equivalent diameter of the hole is preferably greater than 0 μm and less than 20 μm, further preferably greater than 1 μm and less than 18 μm, more preferably greater than 2 μm and less than 16 μm, further preferably greater than 3 μm and less than 15 μm, particularly preferably greater than 4 μm and less than 13 μm, and particularly preferably greater than 5 μm and less than 12 μm. The method for determining the maximum circular equivalent diameter of the hole will be described in the embodiments described below. In addition, the method for setting the maximum circular equivalent diameter of the hole to less than the above value is also explained below.
除孔部之最大圓等效直徑為上述值以下以外,本發明之氧化物燒結體之孔部之最大費雷特直徑(Feret diameter)極小,為50 μm以下。費雷特直徑係指外接於測量對象之矩形之大小。藉由將孔部之最大費雷特直徑設定為上述值以下,本發明之氧化物燒結體於例如用作濺鍍靶材之情形時,亦可有效抑制於濺鍍時發生異常放電。又,可有效防止濺鍍時產生粒子、及靶材發生破裂或龜裂。就使該等優點更加顯著之觀點而言,孔部之最大費雷特直徑較佳為45 μm以下,更佳為40 μm以下,進而更佳為35 μm以下,尤佳為30 μm以下,特佳為28 μm以下,最佳為26 μm以下。孔部之最大費雷特直徑越接近零越佳。就該觀點而言,孔部之最大費雷特直徑較佳為超過0 μm且50 μm以下,進而較佳為2 μm以上45 μm以下,更佳為3 μm以上40 μm以下,進而更佳為4 μm以上35 μm以下,尤佳為6 μm以上30 μm以下,特佳為8 μm以上28 μm以下,最佳為10 μm以上26 μm以下。 孔部之最大費雷特直徑之測定方法將於後述實施例中進行說明。又,亦於下文中闡述用於將孔部之最大費雷特直徑設為上述值以下之方法。 In addition to the maximum circular equivalent diameter of the hole being less than the above value, the maximum Feret diameter of the hole of the oxide sintered body of the present invention is extremely small, less than 50 μm. The Feret diameter refers to the size of a rectangle circumscribed to the measurement object. By setting the maximum Feret diameter of the hole to less than the above value, the oxide sintered body of the present invention can effectively suppress abnormal discharge during sputtering when used as a sputtering target, for example. In addition, it can effectively prevent the generation of particles during sputtering and the cracking or cracking of the target. From the perspective of making these advantages more significant, the maximum Feret diameter of the hole is preferably 45 μm or less, more preferably 40 μm or less, further preferably 35 μm or less, particularly preferably 30 μm or less, particularly preferably 28 μm or less, and optimally 26 μm or less. The closer the maximum Feret diameter of the hole is to zero, the better. From this perspective, the maximum Feret diameter of the hole is preferably greater than 0 μm and less than 50 μm, further preferably 2 μm or more and 45 μm or less, more preferably 3 μm or more and 40 μm or less, further preferably 4 μm or more and 35 μm or less, particularly preferably 6 μm or more and 30 μm or less, particularly preferably 8 μm or more and 28 μm or less, and optimally 10 μm or more and 26 μm or less. The method for determining the maximum Feret diameter of the hole will be described in the following embodiments. In addition, the method for setting the maximum Feret diameter of the hole to a value below the above value will also be described below.
本發明之氧化物燒結體較佳為滿足上述(i)孔部面積率、(ii)最大圓等效直徑、及(iii)最大費雷特直徑中之至少一項,進而較佳為滿足(i)-(iii)中之至少兩項之組合,更佳為滿足(i)-(iii)之全部。The oxide sintered body of the present invention preferably satisfies at least one of the above-mentioned (i) pore area ratio, (ii) maximum circle equivalent diameter, and (iii) maximum Feret diameter, and further preferably satisfies a combination of at least two of (i)-(iii), and more preferably satisfies all of (i)-(iii).
本發明之氧化物燒結體除上述(i)-(iii)以外,還藉由相對密度高來賦予特徵。具體而言,本發明之氧化物燒結體之相對密度較佳為表現出99.6%以上之較高值。藉由表現出此種較高之相對密度,本發明之氧化物燒結體於例如用作濺鍍靶材,並用該靶材進行濺鍍之情形時,可抑制濺鍍時之異常放電,故較佳。就該觀點而言,本發明之氧化物燒結體之相對密度較佳為99.8%以上,更佳為100.0%以上,進而更佳為100.2%以上,尤佳為100.3%以上。相對密度之上限值並無特別限制,較佳為105%以下,進而較佳為104%以下,更佳為103%以下,進而更佳為102%以下。具有此種相對密度之本發明之氧化物燒結體可藉由後述方法適宜地製造。相對密度按照阿基米德法來測定。具體之測定方法將於後述實施例中進行說明。In addition to the above (i)-(iii), the oxide sintered body of the present invention is also characterized by a high relative density. Specifically, the relative density of the oxide sintered body of the present invention is preferably a high value of 99.6% or more. By showing such a high relative density, the oxide sintered body of the present invention is preferably used as a sputtering target and when sputtering is performed using the target, abnormal discharge during sputtering can be suppressed, so it is preferred. From this viewpoint, the relative density of the oxide sintered body of the present invention is preferably 99.8% or more, more preferably 100.0% or more, further preferably 100.2% or more, and even more preferably 100.3% or more. The upper limit of the relative density is not particularly limited, but is preferably 105% or less, further preferably 104% or less, more preferably 103% or less, and further preferably 102% or less. The oxide sintered body of the present invention having such a relative density can be suitably manufactured by the method described below. The relative density is measured according to the Archimedean method. The specific measurement method will be described in the embodiments described below.
本發明之氧化物燒結體還藉由高強度來賦予特徵。具體而言,本發明之氧化物燒結體之抗彎強度較佳為表現出180 MPa以上之較高值。藉由表現出此種較高之抗彎強度,本發明之氧化物燒結體於例如用作濺鍍靶材,並用該靶材進行濺鍍之情形時,即使濺鍍過程中意外發生異常放電,靶材亦難以發生破裂或龜裂,故較佳。就該觀點而言,本發明之氧化物燒結體之抗彎強度較佳為190 MPa以上,更佳為200 MPa以上,進而更佳為210 MPa以上,尤佳為220 MPa以上,特佳為230 MPa以上,最佳為240 MPa以上。抗彎強度之上限值並無特別限制,較佳為300 MPa以下,進而較佳為290 MPa以下,更佳為280 MPa以下,進而更佳為270 MPa以下。具有此種抗彎強度之本發明之氧化物燒結體可藉由後述方法適宜地製造。抗彎強度依據JIS R1601來測定。具體之測定方法將於後述實施例中進行說明。The oxide sintered body of the present invention is also characterized by high strength. Specifically, the bending strength of the oxide sintered body of the present invention is preferably a higher value of 180 MPa or more. By showing such a high bending strength, the oxide sintered body of the present invention is preferably used as a sputtering target, and when the target is used for sputtering, even if abnormal discharge occurs unexpectedly during the sputtering process, the target is unlikely to crack or crack, so it is preferred. From this viewpoint, the flexural strength of the oxide sintered body of the present invention is preferably 190 MPa or more, more preferably 200 MPa or more, further preferably 210 MPa or more, particularly preferably 220 MPa or more, particularly preferably 230 MPa or more, and most preferably 240 MPa or more. There is no particular restriction on the upper limit of the flexural strength, but it is preferably 300 MPa or less, further preferably 290 MPa or less, further preferably 280 MPa or less, and further preferably 270 MPa or less. The oxide sintered body of the present invention having such flexural strength can be suitably manufactured by the method described below. The flexural strength is measured in accordance with JIS R1601. The specific measurement method will be described in the embodiments described below.
關於本發明之氧化物燒結體,就於將該氧化物燒結體用作濺鍍靶材之情形時,可容易進行DC(Direct Current,直流)濺鍍之觀點而言,較佳為體電阻率較低。就該觀點而言,氧化物燒結體之體電阻率較佳為10 Ω・cm以下。使用三菱化學股份有限公司製之Loresta(註冊商標)HP MCP-T410(串聯4探針型ESP),於AUTO RANGE(自動量程)模式下測定體電阻率。測定部位設為氧化物燒結體之中心附近及四角共5處,將各測定值之算術平均值設為該燒結體之體電阻率。Regarding the oxide sintered body of the present invention, from the viewpoint that DC (Direct Current) sputtering plating can be easily performed when the oxide sintered body is used as a sputtering target, it is preferable that the bulk resistivity is lower. From this viewpoint, the bulk resistivity of the oxide sintered body is preferably 10 Ω・cm or less. The bulk resistivity is measured in AUTO RANGE mode using Loresta (registered trademark) HP MCP-T410 (series 4-probe type ESP) manufactured by Mitsubishi Chemical Corporation. The measurement sites are set to 5 locations, namely, the center and four corners of the oxide sintered body, and the arithmetic mean of the measured values is set as the bulk resistivity of the sintered body.
如上所述,本發明之氧化物燒結體含有Sn、Ta及Nb作為金屬元素。就提昇由該氧化物燒結體形成之透明導電膜之特性之觀點而言,本發明之氧化物燒結體較佳為含有SnO 2作為主成分,含有Ta 2O 5及Nb 2O 5作為副成分。就使該優點更加顯著之觀點而言,氧化物燒結體中所占之Ta 2O 5及Nb 2O 5之合計量較佳為1.15質量%以上12.0質量%以下,進而較佳為3.5質量%以上10質量%以下,更佳為4.0質量%以上8.0質量%以下,進而更佳為5.0質量%以上7.0質量%以下。 As described above, the oxide sintered body of the present invention contains Sn, Ta and Nb as metal elements. From the viewpoint of improving the characteristics of the transparent conductive film formed by the oxide sintered body, the oxide sintered body of the present invention preferably contains SnO 2 as a main component and contains Ta 2 O 5 and Nb 2 O 5 as auxiliary components. From the viewpoint of making this advantage more significant, the total amount of Ta 2 O 5 and Nb 2 O 5 in the oxide sintered body is preferably 1.15 mass% to 12.0 mass%, more preferably 3.5 mass% to 10 mass%, more preferably 4.0 mass% to 8.0 mass%, and more preferably 5.0 mass% to 7.0 mass%.
關於本發明之氧化物燒結體中之Ta 2O 5與Nb 2O 5之比率,就提昇由該氧化物燒結體形成之透明導電膜之特性之觀點、及提昇該氧化物燒結體之燒結密度之觀點而言,以Nb 2O 5/Ta 2O 5之質量比表示,較佳為0.15以上0.90以下,進而較佳為0.15以上0.60以下,更佳為0.16以上0.43以下,進而更佳為0.17以上0.33以下。 Regarding the ratio of Ta 2 O 5 to Nb 2 O 5 in the oxide sintered body of the present invention, from the viewpoint of improving the characteristics of the transparent conductive film formed from the oxide sintered body and the viewpoint of improving the sintered density of the oxide sintered body, the ratio is preferably 0.15 to 0.90, more preferably 0.15 to 0.60, more preferably 0.16 to 0.43, and even more preferably 0.17 to 0.33, expressed as a mass ratio of Nb 2 O 5 /Ta 2 O 5 .
關於本發明之氧化物燒結體中之Sn、Ta、及Nb之具體比率,較佳為Sn以SnO 2換算為80質量%以上且未達100質量%,較佳為Ta以Ta 2O 5換算為超過0質量%且10質量%以下,較佳為Nb以Nb 2O 5換算為超過0質量%且10質量%以下。 進而,較佳為Sn以SnO 2換算為88質量%以上98.85質量%以下,較佳為Ta以Ta 2O 5換算為1質量%以上8質量%以下,較佳為Nb以Nb 2O 5換算為0.15質量%以上4質量%以下。 尤其,較佳為Sn以SnO 2換算為90質量%以上96.5質量%以下,較佳為Ta以Ta 2O 5換算為3質量%以上7質量%以下,較佳為Nb以Nb 2O 5換算為0.5質量%以上3質量%以下。 藉由使本發明之氧化物燒結體以該比率含有Sn、Ta及Nb,由該氧化物燒結體形成之透明導電膜之特性得到提昇,故較佳。 再者,SnO 2、Ta 2O 5、及Nb 2O 5各自之比率為包含氧化物燒結體中所含之不可避免之雜質之量在內之質量基準下之值。 Regarding the specific ratios of Sn, Ta, and Nb in the oxide sintered body of the present invention, it is preferred that Sn be 80 mass% or more and less than 100 mass% in terms of SnO2 , it is preferred that Ta be more than 0 mass% and less than 10 mass% in terms of Ta2O5 , and it is preferred that Nb be more than 0 mass % and less than 10 mass% in terms of Nb2O5 . Furthermore, it is preferred that Sn be 88 mass% or more and less than 98.85 mass% in terms of SnO2 , it is preferred that Ta be 1 mass% or more and less than 8 mass% in terms of Ta2O5 , and it is preferred that Nb be 0.15 mass% or more and less than 4 mass% in terms of Nb2O5 . In particular, it is preferred that Sn is 90 mass % or more and 96.5 mass % or less as converted to SnO 2 , it is preferred that Ta is 3 mass % or more and 7 mass % or less as converted to Ta 2 O 5 , and it is preferred that Nb is 0.5 mass % or more and 3 mass % or less as converted to Nb 2 O 5. It is preferred that the oxide sintered body of the present invention contains Sn, Ta and Nb in such ratios, because the characteristics of the transparent conductive film formed from the oxide sintered body are improved. Furthermore, the respective ratios of SnO 2 , Ta 2 O 5 , and Nb 2 O 5 are values on a mass basis including the amount of inevitable impurities contained in the oxide sintered body.
繼而,對本發明之氧化物燒結體之適宜之製造方法進行說明。本發明之氧化物燒結體係藉由對原料粉進行燒結而製造。使用錫氧化物粉、鉭氧化物粉及鈮氧化物粉作為原料粉。作為錫氧化物粉,較佳為使用SnO 2粉。作為鉭氧化物粉,較佳為使用Ta 2O 5粉。作為鈮氧化物粉,較佳為使用Nb 2O 5粉。 各氧化物粉之使用比率較佳為以目標之氧化物燒結體中所含之SnO 2、Ta 2O 5及Nb 2O 5之比率成為上述範圍之方式進行調整。 Next, a suitable method for producing the oxide sintered body of the present invention is described. The oxide sintered body of the present invention is produced by sintering raw material powders. Tin oxide powder, tantalum oxide powder and niobium oxide powder are used as raw material powders. As the tin oxide powder, SnO2 powder is preferably used. As the tantalum oxide powder, Ta2O5 powder is preferably used. As the niobium oxide powder, Nb2O5 powder is preferably used. The usage ratio of each oxide powder is preferably adjusted in such a way that the ratio of SnO2, Ta2O5 and Nb2O5 contained in the target oxide sintered body becomes the above range.
關於各氧化物粉之粒徑,就使於分散介質中之分散性充分之觀點而言,以雷射繞射散射式粒度分佈測定法所測得之累積體積50體積%時之體積累積粒徑D50表示,較佳為0.3 μm以上1.2 μm以下,更佳為0.4 μm以上1.1 μm以下,進而較佳為0.5 μm以上0.9 μm以下。Regarding the particle size of each oxide powder, from the viewpoint of achieving sufficient dispersibility in the dispersion medium, the volume cumulative particle size D50 at the cumulative volume 50% measured by the laser diffraction scattering particle size distribution measurement method is preferably 0.3 μm to 1.2 μm, more preferably 0.4 μm to 1.1 μm, and further preferably 0.5 μm to 0.9 μm.
本發明人之研究之結果判明,於本製造方法中,就可成功製造抑制了孔部產生之氧化物燒結體之觀點而言,有利的是分別單獨製備各氧化物粉之漿料,將各漿料混合來製備混合漿料。以下對該程序進行詳述。 首先,分別單獨製備各氧化物粉之漿料。作為用於製備漿料之分散介質,可使用可使各氧化物粉分散之液體。作為此種分散介質,例如可例舉水及各種有機溶劑。作為有機溶劑,例如可使用乙醇等。該等分散介質中,就經濟性及易處理性等觀點而言,較佳為使用水。 將漿料中之分散介質之比率設定為相對於氧化物粉之質量較佳為20質量%以上70質量%以下,更佳為30質量%以上60質量%以下,進而較佳為35質量%以上55質量%以下,如此,則氧化物粉將充分分散於分散介質中。 The results of the inventor's research have shown that in this manufacturing method, from the perspective of successfully manufacturing an oxide sintered body with suppressed pores, it is advantageous to prepare slurries of each oxide powder separately and mix the slurries to prepare a mixed slurry. The following is a detailed description of the procedure. First, prepare slurries of each oxide powder separately. As a dispersion medium for preparing the slurry, a liquid that can disperse each oxide powder can be used. As such a dispersion medium, for example, water and various organic solvents can be cited. As an organic solvent, for example, ethanol can be used. Among these dispersion media, water is preferably used from the perspective of economy and ease of handling. The ratio of the dispersing medium in the slurry is preferably set to 20% to 70% by mass relative to the mass of the oxide powder, more preferably 30% to 60% by mass, and further preferably 35% to 55% by mass. In this way, the oxide powder will be fully dispersed in the dispersing medium.
關於各氧化物粉之漿料中之氧化物粉之濃度,考慮到該氧化物粉於分散介質中之分散性,較佳為58質量%以上84質量%以下,更佳為62質量%以上77質量%以下,進而較佳為64質量%以上74質量%以下。 就提昇漿料中所含之各氧化物粉之分散性之觀點而言,較佳為於各漿料中調配分散劑。作為分散劑,可根據氧化物粉之種類使用適當者。例如可使用聚羧酸銨、聚羧酸鈉及聚羧酸胺鹽等聚羧酸鹽;四級陽離子聚合物;聚伸烷基二醇等非離子系界面活性劑;及四級銨鹽等陽離子系界面活性劑等。該等分散劑可單獨使用一種,或可組合使用兩種以上。該等分散劑中,就氧化物粉之分散性較高之方面而言,較佳為使用聚羧酸鹽,特佳為使用聚羧酸銨。 各漿料中調配之分散劑之種類可相同,或者亦可不同。 Regarding the concentration of the oxide powder in the slurry of each oxide powder, considering the dispersibility of the oxide powder in the dispersion medium, it is preferably 58 mass% to 84 mass%, more preferably 62 mass% to 77 mass%, and further preferably 64 mass% to 74 mass%. From the viewpoint of improving the dispersibility of each oxide powder contained in the slurry, it is better to mix a dispersant in each slurry. As a dispersant, an appropriate one can be used according to the type of oxide powder. For example, polycarboxylates such as ammonium polycarboxylate, sodium polycarboxylate and polycarboxylate amine salt; quaternary cationic polymers; non-ionic surfactants such as polyalkylene glycol; and cationic surfactants such as quaternary ammonium salts can be used. These dispersants can be used alone or in combination of two or more. Among these dispersants, polycarboxylates are preferred, and ammonium polycarboxylates are particularly preferred, in terms of higher dispersibility of oxide powder. The types of dispersants prepared in each slurry can be the same or different.
各漿料中調配之分散劑之濃度可根據漿料中所含之氧化物粉之濃度及種類來適當選擇。將漿料中之分散劑之濃度設定為相對於氧化物粉之質量較佳為0.01質量%以上0.04質量%以下,更佳為0.015質量%以上0.035質量%以下,進而較佳為0.02質量%以上0.03質量%以下,如此,則表現出應達到滿足之分散性。各漿料中之分散劑之濃度可相同,亦可分別不同。The concentration of the dispersant in each slurry can be appropriately selected according to the concentration and type of the oxide powder contained in the slurry. The concentration of the dispersant in the slurry is preferably set to 0.01 mass% to 0.04 mass% relative to the mass of the oxide powder, more preferably 0.015 mass% to 0.035 mass%, and further preferably 0.02 mass% to 0.03 mass%, so that the dispersion should be satisfactory. The concentration of the dispersant in each slurry can be the same or different.
各漿料中亦可調配結合劑。藉由調配結合劑,可於使用後述之混合漿料獲得造粒物時,使造粒物之強度適度。作為結合劑,例如可使用各種有機高分子材料。作為有機高分子材料,例如可使用聚乙烯醇、丙烯酸系乳液黏合劑等。 各漿料中調配之結合劑之濃度可根據漿料中所含之氧化物粉之濃度及種類來適當選擇。將漿料中之結合劑之濃度設定為相對於氧化物粉之質量較佳為0.2質量%以上0.8質量%以下,更佳為0.3質量%以上0.7質量%以下,進而較佳為0.4質量%以上0.6質量%以下,則可使造粒物之強度適度。各漿料中之結合劑之濃度可相同,亦可分別不同。 A binder may also be mixed in each slurry. By mixing a binder, the strength of the granulated material can be made appropriate when the granulated material is obtained using the mixed slurry described later. As a binder, for example, various organic polymer materials can be used. As an organic polymer material, for example, polyvinyl alcohol, acrylic emulsion adhesive, etc. can be used. The concentration of the binder mixed in each slurry can be appropriately selected according to the concentration and type of the oxide powder contained in the slurry. The concentration of the binder in the slurry is preferably set to 0.2 mass% to 0.8 mass% relative to the mass of the oxide powder, more preferably 0.3 mass% to 0.7 mass%, and further preferably 0.4 mass% to 0.6 mass%, so that the strength of the granulated material can be appropriate. The concentration of the binder in each slurry can be the same or different.
漿料之製備係藉由混合構成漿料之各成分來進行。就可使氧化物粉充分分散於分散介質中之觀點而言,混合時較佳為例如使用球磨機或珠磨機等介質研磨機裝置。The slurry is prepared by mixing the components constituting the slurry. From the viewpoint of fully dispersing the oxide powder in the dispersion medium, the mixing is preferably performed using a medium milling device such as a ball mill or a bead mill.
按照以上程序製備各漿料後,繼而將各漿料混合來製備混合漿料。各漿料之混合比率較佳為以目標之氧化物燒結體中所含之SnO 2、Ta 2O 5及Nb 2O 5之比率成為上述範圍之方式進行調整。 為將各漿料混合來獲得混合漿料,較佳為例如使用球磨機或珠磨機等介質研磨機裝置,但並不限於該方法。 After preparing the slurries according to the above procedure, the slurries are then mixed to prepare a mixed slurry. The mixing ratio of the slurries is preferably adjusted so that the ratio of SnO 2 , Ta 2 O 5 and Nb 2 O 5 contained in the target oxide sintered body is within the above range. In order to mix the slurries to obtain the mixed slurry, it is preferred to use a medium milling device such as a ball mill or a bead mill, but the method is not limited to this method.
製備各氧化物粉之漿料,將各漿料混合來獲得混合漿料具有下述優點。 於本製造方法中,如後文所述,較佳為使用混合漿料,並藉由噴霧乾燥法來獲得造粒物。為順利進行噴霧乾燥法,有利的是增加混合漿料中調配之分散劑之量來降低該混合漿料之黏度。但是,若增加分散劑之調配量,則存在由噴霧乾燥法所得之造粒物較硬而難以壓碎之傾向。若對使用此種造粒物獲得之氧化物燒結體製造用成形體進行加壓成形,則由於加壓過程中造粒物難以壓碎,導致成形體中易產生缺損部位。若煅燒此種成形體,則所得之燒結體不緻密,會產生缺損部位。 另一方面,若減少混合漿料中調配之分散劑之量以使造粒物易壓碎,則存在混合漿料之黏度上升之傾向,故難以製造形狀規整之造粒物。若對使用此種造粒物之成形體進行加壓成形,則成形體中仍易產生缺損部位,進而燒結體不緻密,會產生缺損部位。 與之相對,本發明人之研究之結果判明,藉由在各氧化物粉之漿料中調配分散劑,將各漿料混合來獲得混合漿料,即使減少分散劑之調配量,亦可抑制混合漿料之黏度上升,獲得分散性良好之混合漿料。使用此種混合漿料製造之燒結體為缺損部位之產生得到抑制之緻密之燒結體。 Preparing slurries of various oxide powders and mixing the various slurries to obtain a mixed slurry has the following advantages. In this manufacturing method, as described later, it is preferred to use a mixed slurry and obtain granules by a spray drying method. In order to smoothly carry out the spray drying method, it is advantageous to increase the amount of dispersant prepared in the mixed slurry to reduce the viscosity of the mixed slurry. However, if the amount of dispersant prepared is increased, there is a tendency for the granules obtained by the spray drying method to be harder and difficult to crush. If a molded body for manufacturing an oxide sintered body obtained using such a granulated body is press-formed, the granules are difficult to crush during the pressurization process, resulting in defects in the molded body. If such a molded body is calcined, the resulting sintered body will be non-dense and will have defects. On the other hand, if the amount of dispersant added to the mixed slurry is reduced to make the granulated material easier to crush, the viscosity of the mixed slurry tends to increase, making it difficult to produce granulated materials with regular shapes. If a molded body using such granulated material is pressurized, defects are still likely to occur in the molded body, and the sintered body will be non-dense and will have defects. In contrast, the results of the inventor's research have shown that by adding a dispersant to the slurries of the oxide powders and mixing the slurries to obtain a mixed slurry, even if the amount of the dispersant added is reduced, the viscosity of the mixed slurry can be suppressed, and a mixed slurry with good dispersibility can be obtained. The sintered body made using this mixed slurry is a dense sintered body with the generation of defective parts suppressed.
製備各氧化物粉之漿料,將各漿料混合來獲得混合漿料亦具有下述其他優點。 於先前技術例如上述專利文獻1及2記載之技術中,於製造含有複數種金屬元素之氧化物燒結體時,係將各金屬元素之氧化物粉一起分散於分散介質中來製備漿料。根據本發明人之研究結果判明,若用該方法製備漿料,則該漿料中調配之分散劑優先作用於特定之氧化物,氧化物之間對分散介質之分散性產生了差異。若分散性產生差異,則由漿料製造之造粒物中之氧化物粉之狀態、例如易壓碎性之程度不均勻,因此,存在最終所得之氧化物燒結體中易產生孔部這一缺陷。分散性產生差異之原因在於分散劑與各氧化物粉之相互作用根據氧化物粉之種類而不同。因此,於本製造方法中,為防止氧化物之間對分散介質之分散性產生差異,而採用將各氧化物粉逐一分散於分散介質中代替將各氧化物粉一起分散於分散介質中,並於此時將分散劑調配於分散介質中之方法。藉由採用該方法,分散劑將確實地作用於各氧化物粉,故混合漿料中之各氧化物粉之分散性不易產生差異。 Preparing slurries of various oxide powders and mixing the various slurries to obtain a mixed slurry also has the following other advantages. In the prior art, such as the technology described in the above-mentioned patent documents 1 and 2, when manufacturing an oxide sintered body containing multiple metal elements, the oxide powders of various metal elements are dispersed together in a dispersion medium to prepare the slurry. According to the research results of the inventors, if the slurry is prepared by this method, the dispersant formulated in the slurry preferentially acts on a specific oxide, and the dispersibility of the oxides in the dispersion medium varies. If the dispersibility varies, the state of the oxide powder in the granulated material manufactured by the slurry, such as the degree of crushability, is uneven, and therefore, there is a defect that pores are easily generated in the oxide sintered body finally obtained. The reason for the difference in dispersibility is that the interaction between the dispersant and each oxide powder varies depending on the type of oxide powder. Therefore, in this manufacturing method, in order to prevent the difference in dispersibility between oxides in the dispersion medium, a method is adopted in which each oxide powder is dispersed in the dispersion medium one by one instead of dispersing each oxide powder in the dispersion medium together, and the dispersant is mixed in the dispersion medium at this time. By adopting this method, the dispersant will surely act on each oxide powder, so the dispersibility of each oxide powder in the mixed slurry is not easy to produce differences.
製備出混合漿料後,對該混合漿料實施噴霧乾燥法來製造造粒物。於利用噴霧乾燥法進行之造粒中,就造粒物之易壓碎性之方面而言,較佳為製造以雷射繞射散射式粒度分佈測定法所測得之累積體積50體積%時之體積累積粒徑D50所表示之粒徑為30 μm以上60 μm以下,尤其是35 μm以上55 μm以下,特別是40 μm以上50 μm以下之造粒物。就於使用該造粒物製造氧化物燒結體時不易產生孔部之方面而言,有利的是造粒物易被壓碎。再者,造粒物之體積累積粒徑D50為未進行超音波分散處理而測定之粒徑。After the mixed slurry is prepared, the mixed slurry is subjected to a spray drying method to produce granules. In the granulation by the spray drying method, in terms of the crushability of the granules, it is preferred to produce granules having a particle size of 30 μm to 60 μm, especially 35 μm to 55 μm, and especially 40 μm to 50 μm, as indicated by the volume cumulative particle size D50 at 50 volume % measured by the laser diffraction scattering particle size distribution measurement method. In terms of preventing the formation of pores when the granules are used to produce oxide sintered bodies, it is advantageous that the granules are easily crushed. In addition, the volume cumulative particle size D50 of the granulated material is the particle size measured without ultrasonic dispersion treatment.
獲得造粒物後,將該造粒物填充於模具中來製作成形體。成形中例如可採用冷均壓壓製等冷壓法。關於成形時之壓力,就獲得緻密之成形體之方面而言,較佳為設定為600 kg/cm 2以上1200 kg/cm 2以下。 獲得成形體後,可視需要對該成形體實施脫脂步驟。藉由對成形體實施脫脂步驟,可去除該成形體中包含之有機物,例如分散劑及結合劑。脫脂步驟係藉由例如於大氣氣氛下,將成形體加熱至500℃以上900℃以下來進行。 After obtaining the granulated material, the granulated material is filled into a mold to produce a molded body. For example, a cold pressing method such as cold isostatic pressing can be used for molding. Regarding the pressure during molding, in terms of obtaining a dense molded body, it is preferably set to 600 kg/ cm2 or more and 1200 kg/ cm2 or less. After obtaining the molded body, a degreasing step can be performed on the molded body as needed. By performing a degreasing step on the molded body, organic substances contained in the molded body, such as dispersants and binders, can be removed. The degreasing step is performed by, for example, heating the molded body to a temperature of 500°C or more and 900°C or less in an atmospheric atmosphere.
如此獲得成形體後,繼而將其煅燒。成形體之煅燒通常可於含氧氣氛中進行。尤其於大氣氣氛下煅燒較為簡便。煅燒溫度較佳為1500℃以上1700℃以下,更佳為1520℃以上1680℃以下,進而較佳為1550℃以上1650℃以下。煅燒時間較佳為1小時以上100小時以下,更佳為2小時以上50小時以下,進而較佳為3小時以上30小時以下。升溫速度及降溫速度較佳為分別獨立為5℃/小時以上500℃/小時以下,更佳為10℃/小時以上200℃/小時以下,進而較佳為20℃/小時以上100℃/小時以下。After the molded body is obtained in this way, it is then calcined. The molded body can usually be calcined in an oxygen-containing atmosphere. In particular, calcination in an atmospheric atmosphere is simpler. The calcination temperature is preferably 1500°C to 1700°C, more preferably 1520°C to 1680°C, and further preferably 1550°C to 1650°C. The calcination time is preferably 1 hour to 100 hours, more preferably 2 hours to 50 hours, and further preferably 3 hours to 30 hours. The heating rate and the cooling rate are preferably independently 5°C/hour to 500°C/hour, more preferably 10°C/hour to 200°C/hour, and further preferably 20°C/hour to 100°C/hour.
由以上方法所得之氧化物燒結體緻密,孔部形成得到抑制。因此,該氧化物燒結體之上述孔部面積率較低,最大圓等效直徑及最大費雷特直徑較小。The oxide sintered body obtained by the above method is dense and the formation of pores is suppressed. Therefore, the area ratio of the pores in the oxide sintered body is low, and the maximum circle equivalent diameter and the maximum Feret diameter are small.
如此獲得之氧化物燒結體可藉由研削加工等加工為規定尺寸,從而製成濺鍍靶材。將所得之濺鍍靶材與背襯板接合,藉此獲得濺鍍靶。作為背襯板,例如可使用不鏽鋼、銅及鈦等。靶材與背襯板之接合例如可使用銦等低熔點焊料。 如此獲得之濺鍍靶適宜用於製造濺鍍膜、例如透明導電膜。使用該濺鍍靶形成之濺鍍膜可具有與濺鍍靶材同樣之組成。濺鍍膜之比電阻率較佳為9 mΩ・cm以下之低電阻。 [實施例] The oxide sintered body thus obtained can be processed into a specified size by grinding or the like to make a sputtering target. The obtained sputtering target is joined to a backing plate to obtain a sputtering target. As the backing plate, for example, stainless steel, copper, and titanium can be used. For example, a low melting point solder such as indium can be used to join the target and the backing plate. The sputtering target thus obtained is suitable for manufacturing a sputtering film, such as a transparent conductive film. The sputtering film formed using the sputtering target can have the same composition as the sputtering target. The specific resistivity of the sputtering film is preferably a low resistance of 9 mΩ・cm or less. [Example]
以下,藉由實施例來進一步詳細說明本發明。但本發明之範圍並不限於該等實施例。The present invention is further described in detail below by using embodiments, but the scope of the present invention is not limited to these embodiments.
[實施例1] 準備粒徑D50為0.7 μm之SnO 2粉、粒徑D50為0.6 μm之Ta 2O 5粉、及粒徑D50為0.9 μm之Nb 2O 5粉。粒徑D50係使用MicrotracBEL股份有限公司製造之粒度分佈測定裝置MT3300EXII而測定。分散介質使用水。測定物質之折射率設為2.20。 將各氧化物粉分別單獨放入坩堝中,相對於各氧化物粉之質量,添加0.5質量%之聚乙烯醇、0.02質量%之聚羧酸銨、及50質量%之水,使用球磨機混合20小時以製備各漿料。 將製備之各漿料混合,使用球磨機混合60分鐘以獲得混合漿料。關於各漿料之混合比率,相對於各粉之合計,SnO 2設為96.5質量%,Ta 2O 5設為3.0質量%,Nb 2O 5設為0.5質量%。 [Example 1] Prepare SnO2 powder with a particle size D50 of 0.7 μm, Ta2O5 powder with a particle size D50 of 0.6 μm, and Nb2O5 powder with a particle size D50 of 0.9 μm. The particle size D50 is measured using a particle size distribution measuring device MT3300EXII manufactured by MicrotracBEL Co., Ltd. Water is used as a dispersion medium. The refractive index of the measured substance is set to 2.20. Each oxide powder is placed separately in a crucible, and 0.5 mass% of polyvinyl alcohol, 0.02 mass% of ammonium polycarboxylate, and 50 mass% of water are added relative to the mass of each oxide powder, and mixed using a ball mill for 20 hours to prepare each slurry. The prepared slurries were mixed and mixed for 60 minutes using a ball mill to obtain a mixed slurry. The mixing ratio of each slurry was 96.5 mass % for SnO 2 , 3.0 mass % for Ta 2 O 5 , and 0.5 mass % for Nb 2 O 5 relative to the total of each powder.
將混合漿料供給至噴霧乾燥裝置,於霧化器轉速14000 rpm、入口溫度200℃、出口溫度80℃之條件下實施噴霧乾燥法,獲得造粒物。造粒物之粒徑D50為45 μm。 將所得之造粒物填充至158 mm×640 mm之模具內,於800 kg/cm 2之壓力下壓製成形,獲得成形體。將所得之成形體於大氣氣氛下以750℃加熱6小時,進行脫脂。 對脫脂後之成形體進行煅燒,製作燒結體。煅燒係於氧濃度為20 vol%之氣氛中,以煅燒溫度1600℃、煅燒時間8小時、升溫速度50℃/h、降溫速度50℃/h之條件進行。 對如此獲得之燒結體進行切削加工,獲得寬度100 mm、長度240 mm、厚度8 mm、表面粗糙度Ra為1.0 μm之氧化物燒結體。切削加工中使用#170之磨石。 The mixed slurry is supplied to a spray drying device, and spray drying is performed under the conditions of an atomizer speed of 14000 rpm, an inlet temperature of 200°C, and an outlet temperature of 80°C to obtain granules. The particle size D50 of the granules is 45 μm. The obtained granules are filled into a mold of 158 mm×640 mm, and pressed under a pressure of 800 kg/ cm2 to obtain a molded body. The obtained molded body is heated at 750°C for 6 hours in an atmospheric atmosphere for degreasing. The degreased molded body is calcined to produce a sintered body. The calcination was carried out in an atmosphere with an oxygen concentration of 20 vol%, at a calcination temperature of 1600°C, a calcination time of 8 hours, a heating rate of 50°C/h, and a cooling rate of 50°C/h. The sintered body obtained in this way was cut to obtain an oxide sintered body with a width of 100 mm, a length of 240 mm, a thickness of 8 mm, and a surface roughness Ra of 1.0 μm. A #170 grindstone was used in the cutting process.
[實施例2及3] 以相對於SnO 2粉、Ta 2O 5粉及Nb 2O 5粉之合計,各粉之比率成為下表1之方式將各粉混合。除此以外,與實施例1同樣地獲得氧化物燒結體。 [Examples 2 and 3] The powders were mixed so that the ratio of each powder relative to the total of SnO2 powder, Ta2O5 powder and Nb2O5 powder was as shown in Table 1. Except for this, an oxide sintered body was obtained in the same manner as in Example 1.
[比較例1] 準備與實施例1相同之SnO 2粉、Ta 2O 5粉及Nb 2O 5粉。 以相對於各粉之合計,SnO 2為94質量%,Ta 2O 5為5質量%,Nb 2O 5為1質量%之方式稱量各粉,乾式混合21小時。 相對於混合粉,添加6質量%之4質量%聚乙烯醇水溶液。使用研缽將聚乙烯醇與混合粉混合後,使混合物通過5.5目之篩,獲得成形用混合粉。 除此以外,與實施例1同樣地獲得氧化物燒結體。 [Comparative Example 1] Prepare the same SnO2 powder, Ta2O5 powder and Nb2O5 powder as in Example 1. Weigh each powder so that SnO2 is 94 mass%, Ta2O5 is 5 mass% and Nb2O5 is 1 mass% relative to the total of each powder, and dry mix for 21 hours. Add 6 mass% of a 4 mass% polyvinyl alcohol aqueous solution relative to the mixed powder. After mixing the polyvinyl alcohol and the mixed powder using a mortar, pass the mixture through a 5.5 mesh sieve to obtain a mixed powder for molding. Except for this, an oxide sintered body is obtained in the same manner as in Example 1.
[比較例2] 準備與實施例1相同之SnO 2粉、Ta 2O 5粉及Nb 2O 5粉。 將全部粉放入坩堝中,相對於粉全部量,添加0.5質量%之聚乙烯醇、0.02質量%之聚羧酸銨、及50質量%之水,使用球磨機混合20小時,製備混合漿料。關於混合漿料中之各粉之比率,相對於各粉之合計,SnO 2設為94質量%,Ta 2O 5設為5質量%,Nb 2O 5設為1質量%。除此以外,與實施例1同樣地獲得氧化物燒結體。 [Comparative Example 2] Prepare the same SnO2 powder, Ta2O5 powder and Nb2O5 powder as in Example 1. Put all the powders into a crucible , add 0.5 mass% of polyvinyl alcohol, 0.02 mass% of ammonium polycarboxylate and 50 mass% of water relative to the total amount of the powders, and mix them for 20 hours using a ball mill to prepare a mixed slurry. Regarding the ratio of each powder in the mixed slurry, relative to the total of each powder, SnO2 is set to 94 mass%, Ta2O5 is set to 5 mass%, and Nb2O5 is set to 1 mass%. Except for this, an oxide sintered body is obtained in the same manner as in Example 1 .
[比較例3] 於本比較例中,將實施例2中使用之分散劑即0.02質量%之聚羧酸銨之濃度增量至0.05質量%。除此以外,與實施例2同樣地獲得氧化物燒結體。 [Comparative Example 3] In this comparative example, the concentration of the dispersant used in Example 2, i.e., 0.02 mass % of ammonium polycarboxylate, was increased to 0.05 mass %. Other than this, an oxide sintered body was obtained in the same manner as in Example 2.
[評估] 對實施例及比較例所得之氧化物燒結體,用以下方法測定孔部面積率、最大圓等效直徑、最大費雷特直徑、相對密度、抗彎強度。 又,使用實施例及比較例所得之氧化物燒結體,製造濺鍍靶,用以下方法評估使用該靶進行濺鍍時之異常放電之發生程度、及靶破裂之發生程度。 將以上結果示於下表1中。 [Evaluation] The pore area ratio, maximum circle equivalent diameter, maximum Feret diameter, relative density, and bending strength of the oxide sintered bodies obtained in the embodiments and comparative examples were measured by the following method. In addition, the oxide sintered bodies obtained in the embodiments and comparative examples were used to manufacture sputtering targets, and the degree of abnormal discharge and the degree of target cracking during sputtering using the targets were evaluated by the following method. The above results are shown in Table 1 below.
[孔部面積率、最大圓等效直徑及最大費雷特直徑] (1)製備氧化物燒結體之截面 使用砂紙#180、#400、#800、#1000、#2000對切斷氧化物燒結體所得之切斷面進行階段性研磨,最後進行拋光研磨,拋光成鏡面。 (2)孔部面積率、最大圓等效直徑及最大費雷特直徑之測定 使用掃描型電子顯微鏡(SU3500,日立高新技術公司(股)制),以200倍之倍率對氧化物燒結體之截面拍攝445.3 μm×634.6 μm之範圍之BSE(Back Scattered Electron,背向散射電子)-COMP圖像(以下亦稱為「SEM圖像」)。使用粒子解析軟體(「粒子解析3.0版」,Sumitomo Metal Technology股份有限公司製造)追蹤SEM圖像並用掃描儀進行圖像識別。將該圖像二值化。此時,將換算值設定為以μm為單位顯示1個像素。 繼而,以SEM圖像中所拍攝到之全部孔部為對象,求出其面積及面積之總和。求出孔部面積之總和相對於視野面積(445.3 μm×634.6 μm)之百分率之值。求出以10個不同之SEM圖像為對象所測得之百分率之算術平均值,將該算術平均值設為本發明之孔部面積率。 又,基於在求出孔部面積率之過程中測得之孔部面積,算出孔部之圓等效直徑。將以10個不同之SEM圖像為對象所測得之全部圓等效直徑中之最大值設為孔部之最大圓等效直徑。 有別於以上操作,以SEM圖像中所拍攝到之全部孔部為對象,基於水平方向之全部像素數,算出水平費雷特直徑(μm),並基於垂直方向之全部像素數,算出垂直費雷特直徑(μm)。將以10個不同之SEM圖像為對象所測得之全部水平費雷特直徑及垂直費雷特直徑中之最大值設為孔部之最大費雷特直徑。 [Area ratio of hole, maximum circle equivalent diameter and maximum Feret diameter] (1) Preparation of cross section of oxide sintered body Use sandpaper #180, #400, #800, #1000 and #2000 to grind the cross section of the oxide sintered body in stages, and finally polish it to a mirror surface. (2) Determination of pore area ratio, maximum circular equivalent diameter, and maximum Feret diameter Using a scanning electron microscope (SU3500, manufactured by Hitachi High-Technologies Corporation), a BSE (Back Scattered Electron)-COMP image (hereinafter also referred to as "SEM image") in the range of 445.3 μm × 634.6 μm was taken at a magnification of 200 times for the cross section of the oxide sintered body. The SEM image was tracked using particle analysis software ("Particle Analysis Version 3.0", manufactured by Sumitomo Metal Technology Co., Ltd.) and image identification was performed using a scanner. The image was binarized. At this time, the conversion value was set to display 1 pixel in μm. Next, the area and the sum of the areas of all the holes captured in the SEM image are calculated. The percentage of the sum of the hole areas relative to the field of view area (445.3 μm×634.6 μm) is calculated. The arithmetic mean of the percentages measured using 10 different SEM images is calculated, and the arithmetic mean is set as the hole area ratio of the present invention. In addition, the circular equivalent diameter of the hole is calculated based on the hole area measured in the process of calculating the hole area ratio. The maximum value of all the circular equivalent diameters measured using 10 different SEM images is set as the maximum circular equivalent diameter of the hole. Different from the above operation, all the holes captured in the SEM image are taken as the object, and the horizontal Feret diameter (μm) is calculated based on the total number of pixels in the horizontal direction, and the vertical Feret diameter (μm) is calculated based on the total number of pixels in the vertical direction. The maximum value of all horizontal Feret diameters and vertical Feret diameters measured in 10 different SEM images is set as the maximum Feret diameter of the hole.
[相對密度] 基於阿基米德法測定相對密度。具體而言,用氧化物燒結體之空氣中質量除以體積(燒結體之水中質量/測量溫度下之水比重),將相對於基於下述式(1)算出之理論密度ρ(g/cm 3)之百分率之值設為相對密度(單位:%)。 ρ={(C 1/100)/ρ 1+(C 2/100)/ρ 2+(C 3/100)/ρ 3} -1(1) 式(1)中之C 1~C 3分別表示靶材之構成物質之含量(質量%),ρ 1~ρ 3表示與C 1~C 3對應之各構成物質之密度(g/cm 3)。 於本發明之情形時,靶材之構成物質之含量(質量%)當作SnO 2、Ta 2O 5、Nb 2O 5,例如, C1:靶材之SnO 2之質量% ρ1:SnO 2之密度(6.95 g/cm 3) C2:靶材之Ta 2O 5之質量% ρ2:Ta 2O 5之密度(8.74 g/cm 3) C3:靶材之Nb 2O 5之質量% ρ3:Nb 2O 5之密度(4.47 g/cm 3) 可將該等應用於式(1)來算出理論密度ρ。 再者,SnO 2之質量%、Ta 2O 5之質量%及Nb 2O 5之質量%可根據由ICP-OES(Inductively Coupled Plasma-Optical Emission Spectrometer,感應耦合電漿原子發射光譜法)分析所得之靶材之各元素之分析結果而求出。 [Relative density] Relative density is measured based on the Archimedean method. Specifically, the mass of the oxide sintered body in air is divided by the volume (mass of the sintered body in water/specific gravity of water at the measurement temperature), and the value of the percentage relative to the theoretical density ρ (g/cm 3 ) calculated based on the following formula (1) is set as the relative density (unit: %). ρ={(C 1 /100)/ρ 1 +(C 2 /100)/ρ 2 +(C 3 /100)/ρ 3 } -1 (1) In formula (1), C 1 to C 3 respectively represent the content (mass %) of the constituent substances of the target material, and ρ 1 to ρ 3 represent the density (g/cm 3 ) of each constituent substance corresponding to C 1 to C 3 . In the case of the present invention, the contents (mass %) of the constituent substances of the target are taken as SnO 2 , Ta 2 O 5 , and Nb 2 O 5 , for example, C1: mass % of SnO 2 in the target ρ1: density of SnO 2 (6.95 g/cm 3 ) C2: mass % of Ta 2 O 5 in the target ρ2: density of Ta 2 O 5 (8.74 g/cm 3 ) C3: mass % of Nb 2 O 5 in the target ρ3: density of Nb 2 O 5 (4.47 g/cm 3 ) These can be applied to formula (1) to calculate the theoretical density ρ. Furthermore, the mass % of SnO 2 , the mass % of Ta 2 O 5 and the mass % of Nb 2 O 5 can be obtained based on the analysis results of each element of the target material obtained by ICP-OES (Inductively Coupled Plasma-Optical Emission Spectrometer).
[抗彎強度] 使用島津製作所製造之Autograph(註冊商標)AGS-500B。以自氧化物燒結體切下之試樣片(全長36 mm以上、寬度4.0 mm、厚度3.0 mm)為對象,按照JIS R1601之3點彎曲強度之測定方法來測定。 [Bending strength] Autograph (registered trademark) AGS-500B manufactured by Shimadzu Corporation was used. The test specimens (total length 36 mm or more, width 4.0 mm, thickness 3.0 mm) cut from the oxide sintered body were used as the test objects, and the three-point bending strength test method of JIS R1601 was used for the test.
[異常放電之發生及靶破裂之發生程度] 使用實施例及比較例所得之氧化物燒結體製作濺鍍靶,將該靶安裝於DC磁控濺鍍裝置,進行濺鍍。濺鍍條件如下。 ・極限真空度:3×10 -6Pa ・濺鍍壓力:0.4 Pa ・氧分壓:1×10 -3Pa ・輸入電量時間:2 W/cm 2・時長:25小時 用附屬於電源之電弧計數器測量於上述條件下進行濺鍍期間產生之電弧次數。使用μArc Moniter MAM Genesis MAM資料收集器2.02版(LANDMARK TECHNOLOGY公司製)作為電弧計數器。評估基準如下。 A:電弧次數未達5次 B:電弧次數為5次以上且未達30次 C:電弧次數為30次以上 於上述條件下進行濺鍍期間,利用目視觀察,亦一併評估靶是否發生破裂。 [Occurrence of abnormal discharge and degree of target cracking] A sputtering target was prepared using the oxide sintered bodies obtained in the examples and comparative examples, and the target was mounted in a DC magnetron sputtering device for sputtering. The sputtering conditions were as follows. ・Ultimate vacuum degree: 3×10 -6 Pa ・Sputtering pressure: 0.4 Pa ・Oxygen partial pressure: 1×10 -3 Pa ・Power input time: 2 W/cm 2 ・Duration: 25 hours The number of arcs generated during sputtering under the above conditions was measured using an arc counter attached to the power supply. μArc Moniter MAM Genesis MAM Data Collector Version 2.02 (manufactured by LANDMARK TECHNOLOGY) was used as the arc counter. The evaluation criteria were as follows. A: The number of arcing is less than 5 times. B: The number of arcing is more than 5 times and less than 30 times. C: The number of arcing is more than 30 times. During the sputtering process under the above conditions, visual observation was used to evaluate whether the target was cracked.
[表1]
根據表1所示之結果可知,若將各實施例所得之氧化物燒結體用作濺鍍靶材,則與將比較例所得之氧化物燒結體用作濺鍍靶材之情形相比,於濺鍍時不易發生異常放電,且靶不易破裂。 與之相對,未使用噴霧乾燥法來製造煅燒用成形體之比較例1中,無法使成形體緻密,由該成形體製造之氧化物燒結體中產生了大量孔部。 又,未對每種原料粉製備漿料之比較例2中,造粒物不均勻,無法使成形體緻密,由該成形體製造之氧化物燒結體中產生了大量孔部。 分散劑之調配量多於比較例2之比較例3中,造粒物雖均勻,但較硬而難以壓碎,故無法使成形體緻密,由該成形體製造之氧化物燒結體中產生了大量孔部。 [產業上之可利用性] According to the results shown in Table 1, when the oxide sintered bodies obtained in each embodiment are used as sputtering targets, abnormal discharge is less likely to occur during sputtering, and the target is less likely to break, compared with the case where the oxide sintered bodies obtained in the comparative examples are used as sputtering targets. In contrast, in comparative example 1, in which the spray drying method is not used to produce the calcined molded body, the molded body cannot be made dense, and a large number of pores are generated in the oxide sintered body produced from the molded body. In comparative example 2, in which slurry is not prepared for each raw material powder, the granulated material is uneven, the molded body cannot be made dense, and a large number of pores are generated in the oxide sintered body produced from the molded body. In Comparative Example 3, where the amount of dispersant was greater than that in Comparative Example 2, the granulated product was uniform but hard and difficult to crush, so the compact could not be made dense, and a large number of pores were generated in the oxide sintered body produced from the compact. [Industrial Applicability]
根據本發明,可提供一種孔部較少或即使存在孔部其尺寸亦較小,且於用作濺鍍靶材之情形時不易發生異常放電及破裂之氧化物燒結體及其製造方法與濺鍍靶材。 若使用本發明之氧化物燒結體來進行濺鍍,則與使用先前之氧化物燒結體之情形相比,可抑制於濺鍍時發生異常放電或破裂並且能夠成膜,故可抑制產生多餘次品,進而可減少廢棄物之產生。換言之,可削減處理該等廢棄物時之能量成本。這與達成天然資源之可持續管理及有效利用、以及脫碳(碳中和)化息息相關。 According to the present invention, an oxide sintered body having fewer pores or smaller pores even if present, and which is less prone to abnormal discharge and cracking when used as a sputtering target, and a method for manufacturing the same, and a sputtering target can be provided. If the oxide sintered body of the present invention is used for sputtering, compared with the case of using the previous oxide sintered body, abnormal discharge or cracking during sputtering can be suppressed and film formation can be achieved, so the generation of excess defective products can be suppressed, and the generation of waste can be reduced. In other words, the energy cost of processing such waste can be reduced. This is closely related to achieving sustainable management and effective utilization of natural resources, as well as decarbonization (carbon neutralization).
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