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TWI865381B - Organic light-emitting diode display device and ultrasonic fingerprint identification device - Google Patents

Organic light-emitting diode display device and ultrasonic fingerprint identification device Download PDF

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TWI865381B
TWI865381B TW113113303A TW113113303A TWI865381B TW I865381 B TWI865381 B TW I865381B TW 113113303 A TW113113303 A TW 113113303A TW 113113303 A TW113113303 A TW 113113303A TW I865381 B TWI865381 B TW I865381B
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field effect
effect transistor
block
anode
cathode
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TW202540976A (en
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鐘金峰
盧宏傑
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大陸商業泓科技(成都)有限公司
業泓科技股份有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40OLEDs integrated with touch screens
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals

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  • Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Image Input (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

The invention disclosed an organic light-emitting diode display device and an ultrasonic fingerprint identification device thereof. The ultrasonic fingerprint identification device includes a transparent substrate, a control circuit layer, multiple sets of electrodes and a hydrophobic insulating piezoelectric layer. The control circuit layer is arranged on the transparent substrate and the sets of electrodes are arranged on the control circuit layer and separated from each other. Each set of electrodes includes an anode block and a cathode block. The anode block and its corresponding cathode block are located on the control circuit layer and separated from each other. The hydrophobic insulating piezoelectric layer is arranged on all of the anode blocks and the cathode blocks.

Description

有機發光二極體顯示裝置及其超音波指紋辨識裝置Organic light emitting diode display device and ultrasonic fingerprint recognition device thereof

本發明係關於一種指紋辨識技術,且特別關於一種有機發光二極體顯示裝置及其超音波指紋辨識裝置。The present invention relates to a fingerprint recognition technology, and in particular to an organic light emitting diode display device and an ultrasonic fingerprint recognition device thereof.

指紋識別裝置由於具有隱私保護功能而被設置於顯示裝置中,指紋識別元件能夠識別放置在指紋識別元件上的手指的指紋,當使用者將其手指放置在指紋識別元件的表面上時,使用者的手指的指紋將被識別,進而驗證使用者的身份資訊以增加使用者體驗。The fingerprint recognition device is installed in the display device because of its privacy protection function. The fingerprint recognition element can recognize the fingerprint of the finger placed on the fingerprint recognition element. When the user places his finger on the surface of the fingerprint recognition element, the fingerprint of the user's finger will be recognized, and then the user's identity information will be verified to enhance the user experience.

指紋辨識電子產品以薄膜電晶體玻璃(TFT glass)作為影像控制的開關,積體電路透過軟性印刷電路板與薄膜電晶體進行軟性電路基板-玻璃接合製程(FPC on glass,FOG)。指紋辨識裝置之壓電轉換單元在其薄膜電晶體玻璃透過濕式印刷完成共聚物(CP, copolymer)層、銀電極層與晶片黏結薄膜(DAF, Die Attach Film)。指紋辨識感測器與有機發光二極體顯示模組進行軟對硬(STH)與硬對硬(HTH)的對組,以完成整個屏下式指紋辨識裝置。指紋辨識感測器之主要成本在於薄膜電晶體畫素的玻璃基板、聚偏二氟乙烯(PVDF)層或共聚物層、晶片黏結薄膜、銀電極層與軟性印刷電路板上的積體電路。銀電極層與晶片黏結薄膜主要使用網印製程來簡化工藝成本,但影像會被膜層的空孔或雜質等異物影響到聲傳的影像訊號。然而,透過現有超音波疊構的演進過程,簡化了許多膜層對訊號的干擾,但其疊構都無法省略印刷電極層。Fingerprint recognition electronic products use thin film transistor glass (TFT glass) as the switch for image control. The integrated circuit uses a flexible printed circuit board and thin film transistor to perform a flexible circuit substrate-glass bonding process (FPC on glass, FOG). The piezoelectric conversion unit of the fingerprint recognition device uses wet printing on its thin film transistor glass to complete the copolymer (CP) layer, silver electrode layer and chip adhesive film (DAF, Die Attach Film). The fingerprint recognition sensor and the organic light-emitting diode display module are soft-to-hard (STH) and hard-to-hard (HTH) to complete the entire under-screen fingerprint recognition device. The main cost of fingerprint recognition sensors lies in the glass substrate of thin film transistor pixels, polyvinylidene fluoride (PVDF) layer or copolymer layer, chip bonding film, silver electrode layer and integrated circuit on flexible printed circuit board. The silver electrode layer and chip bonding film mainly use screen printing process to simplify the process cost, but the image will be affected by foreign objects such as pores or impurities in the film layer to the acoustic image signal. However, through the evolution process of existing ultrasonic stacking, many film layers have simplified the interference of signals, but the printed electrode layer cannot be omitted in its stacking.

因此,本發明係在針對上述的困擾,提出一種有機發光二極體顯示裝置及其超音波指紋辨識裝置,以解決習知所產生的問題。Therefore, the present invention aims at the above-mentioned troubles and proposes an organic light emitting diode display device and an ultrasonic fingerprint recognition device thereof to solve the problems generated by the prior art.

本發明提供一種有機發光二極體顯示裝置及其超音波指紋辨識裝置,其可省略現有的銀電極層與晶片黏結薄膜(DAF, Die Attach Film) ,以避免影響到聲傳的影像訊號。The present invention provides an organic light emitting diode display device and an ultrasonic fingerprint recognition device thereof, which can omit the existing silver electrode layer and die attach film (DAF) to avoid affecting the image signal of the acoustic transmission.

在本發明之一實施例中,一種超音波指紋辨識裝置,包含一透明基板、一控制電路層、多組電極與一疏水性絕緣壓電層。控制電路層設於透明基板上,多組電極設於控制電路層上,並彼此相隔。每一組電極包含一陽極區塊與一陰極區塊,陽極區塊及其對應之陰極區塊設於控制電路層上,並彼此相隔。疏水性絕緣壓電層設於多組電極之陽極區塊與陰極區塊上。In one embodiment of the present invention, an ultrasonic fingerprint recognition device includes a transparent substrate, a control circuit layer, multiple sets of electrodes and a hydrophobic insulating piezoelectric layer. The control circuit layer is disposed on the transparent substrate, and the multiple sets of electrodes are disposed on the control circuit layer and are separated from each other. Each set of electrodes includes an anode block and a cathode block, and the anode block and its corresponding cathode block are disposed on the control circuit layer and are separated from each other. The hydrophobic insulating piezoelectric layer is disposed on the anode block and the cathode block of the multiple sets of electrodes.

在本發明之一實施例中,多組電極之陽極區塊與陰極區塊呈週期性排列。In one embodiment of the present invention, the anode blocks and cathode blocks of multiple sets of electrodes are arranged periodically.

在本發明之一實施例中,多組電極之陽極區塊與陰極區塊呈交替式排列。In one embodiment of the present invention, the anode blocks and cathode blocks of multiple sets of electrodes are arranged alternately.

在本發明之一實施例中,陽極區塊及其對應之陰極區塊之間呈現空隙或填滿絕緣材質。In one embodiment of the present invention, there is a gap between the anode block and its corresponding cathode block or the gap is filled with insulating material.

在本發明之一實施例中,疏水性絕緣壓電層形成於陽極區塊及其對應之陰極區塊之間。In one embodiment of the present invention, a hydrophobic insulating piezoelectric layer is formed between an anode block and its corresponding cathode block.

在本發明之一實施例中,控制電路層包含一第一場效電晶體、一第二場效電晶體、一第三場效電晶體、一二極體與一第四場效電晶體。第一場效電晶體連接於一第一偏壓端與陽極區塊之間,第二場效電晶體與第三場效電晶體,連接於第二偏壓端與資料線之間。二極體之陽極連接第一偏壓端,陰極連接陽極區塊。第四場效電晶體連接於一重置電壓端與資料線之間,其中資料線及第一場效電晶體、第三場效電晶體與第四場效電晶體之控制端連接一存取積體電路。In one embodiment of the present invention, the control circuit layer includes a first field effect transistor, a second field effect transistor, a third field effect transistor, a diode and a fourth field effect transistor. The first field effect transistor is connected between a first bias terminal and an anode block, and the second field effect transistor and the third field effect transistor are connected between the second bias terminal and a data line. The anode of the diode is connected to the first bias terminal, and the cathode is connected to the anode block. The fourth field effect transistor is connected between a reset voltage terminal and a data line, wherein the data line and the control terminals of the first field effect transistor, the third field effect transistor and the fourth field effect transistor are connected to an access integrated circuit.

在本發明之一實施例中,一種有機發光二極體顯示裝置,包含一透明基板、一控制電路層、多組電極、一疏水性絕緣壓電層、一雙面膠層與一有機發光二極體顯示模組。 控制電路層設於透明基板之底部,多組電極設於控制電路層之底部,並彼此相隔。每一組電極包含一陽極區塊與一陰極區塊,陽極區塊及其對應之陰極區塊設於控制電路層之底部,並彼此相隔。疏水性絕緣壓電層設於多組電極之陽極區塊與陰極區塊之底部。雙面膠層設於透明基板之頂部,有機發光二極體顯示模組設於雙面膠層之頂部。In one embodiment of the present invention, an organic light-emitting diode display device includes a transparent substrate, a control circuit layer, multiple groups of electrodes, a hydrophobic insulating piezoelectric layer, a double-sided adhesive layer, and an organic light-emitting diode display module. The control circuit layer is arranged at the bottom of the transparent substrate, and the multiple groups of electrodes are arranged at the bottom of the control circuit layer and are separated from each other. Each group of electrodes includes an anode block and a cathode block, and the anode block and its corresponding cathode block are arranged at the bottom of the control circuit layer and are separated from each other. The hydrophobic insulating piezoelectric layer is arranged at the bottom of the anode block and the cathode block of the multiple groups of electrodes. The double-sided adhesive layer is arranged on the top of the transparent substrate, and the organic light-emitting diode display module is arranged on the top of the double-sided adhesive layer.

在本發明之一實施例中,多組電極之陽極區塊與陰極區塊呈週期性排列。In one embodiment of the present invention, the anode blocks and cathode blocks of multiple sets of electrodes are arranged periodically.

在本發明之一實施例中,多組電極之陽極區塊與陰極區塊呈交替式排列。In one embodiment of the present invention, the anode blocks and cathode blocks of multiple sets of electrodes are arranged alternately.

在本發明之一實施例中,陽極區塊及其對應之陰極區塊之間呈現空隙或填滿絕緣材質。In one embodiment of the present invention, there is a gap between the anode block and its corresponding cathode block or the gap is filled with insulating material.

在本發明之一實施例中,疏水性絕緣壓電層形成於陽極區塊及其對應之陰極區塊之間。In one embodiment of the present invention, a hydrophobic insulating piezoelectric layer is formed between an anode block and its corresponding cathode block.

在本發明之一實施例中,控制電路層包含一第一場效電晶體、一第二場效電晶體、一第三場效電晶體、一二極體與一第四場效電晶體。第一場效電晶體連接於一第一偏壓端與陽極區塊之間,第二場效電晶體與第三場效電晶體,連接於第二偏壓端與資料線之間。二極體之陽極連接第一偏壓端,陰極連接陽極區塊。第四場效電晶體連接於一重置電壓端與資料線之間,其中資料線及第一場效電晶體、第三場效電晶體與第四場效電晶體之控制端連接一存取積體電路。In one embodiment of the present invention, the control circuit layer includes a first field effect transistor, a second field effect transistor, a third field effect transistor, a diode and a fourth field effect transistor. The first field effect transistor is connected between a first bias terminal and an anode block, and the second field effect transistor and the third field effect transistor are connected between the second bias terminal and a data line. The anode of the diode is connected to the first bias terminal, and the cathode is connected to the anode block. The fourth field effect transistor is connected between a reset voltage terminal and a data line, wherein the data line and the control terminals of the first field effect transistor, the third field effect transistor and the fourth field effect transistor are connected to an access integrated circuit.

基於上述,有機發光二極體顯示裝置及其超音波指紋辨識裝置以疏水性絕緣壓電層作為電子元件的絕緣保護層,故可省略晶片黏結薄膜,並利用陽極區塊與陰極區塊取代現有的銀電極層,以避免影響到聲傳的影像訊號。Based on the above, the organic light emitting diode display device and the ultrasonic fingerprint recognition device thereof use the hydrophobic insulating piezoelectric layer as the insulating protective layer of the electronic components, so the chip bonding film can be omitted, and the anode block and the cathode block are used to replace the existing silver electrode layer to avoid affecting the image signal of the acoustic transmission.

茲為使 貴審查委員對本發明的結構特徵及所達成的功效有更進一步的瞭解與認識,謹佐以較佳的實施例圖及配合詳細的說明,說明如後:In order to enable you to have a deeper understanding and knowledge of the structural features and effects achieved by the present invention, we would like to provide a better embodiment diagram and a detailed description as follows:

本發明之實施例將藉由下文配合相關圖式進一步加以解說。盡可能的,於圖式與說明書中,相同標號係代表相同或相似構件。於圖式中,基於簡化與方便標示,形狀與厚度可能經過誇大表示。可以理解的是,未特別顯示於圖式中或描述於說明書中之元件,為所屬技術領域中具有通常技術者所知之形態。本領域之通常技術者可依據本發明之內容而進行多種之改變與修改。The embodiments of the present invention will be further explained below in conjunction with the relevant drawings. As much as possible, the same reference numerals in the drawings and the specification represent the same or similar components. In the drawings, the shapes and thicknesses may be exaggerated for the sake of simplicity and convenience. It is understood that the components not specifically shown in the drawings or described in the specification are in the form known to the ordinary skilled person in the relevant technical field. The ordinary skilled person in this field can make various changes and modifications based on the content of the present invention.

當一個元件被稱為『在…上』時,它可泛指該元件直接在其他元件上,也可以是有其他元件存在於兩者之中。相反地,當一個元件被稱為『直接在』另一元件,它是不能有其他元件存在於兩者之中間。如本文所用,詞彙『及/或』包含了列出的關聯項目中的一個或多個的任何組合。When an element is referred to as being "on", it can mean that the element is directly on the other element or that there are other elements between the two. Conversely, when an element is referred to as being "directly on" another element, there cannot be other elements between the two. As used herein, the term "and/or" includes any combination of one or more of the listed associated items.

於下文中關於“一個實施例”或“一實施例”之描述係指關於至少一實施例內所相關連之一特定元件、結構或特徵。因此,於下文中多處所出現之“一個實施例”或 “一實施例”之多個描述並非針對同一實施例。再者,於一或多個實施例中之特定構件、結構與特徵可依照一適當方式而結合。The description of "one embodiment" or "an embodiment" below refers to a specific component, structure or feature associated with at least one embodiment. Therefore, multiple descriptions of "one embodiment" or "an embodiment" appearing in multiple places below are not directed to the same embodiment. Furthermore, specific components, structures and features in one or more embodiments can be combined in an appropriate manner.

揭露特別以下述例子加以描述,這些例子僅係用以舉例說明而已,因為對於熟習此技藝者而言,在不脫離本揭示內容之精神和範圍內,當可作各種之更動與潤飾,因此本揭示內容之保護範圍當視後附之申請專利範圍所界定者為準。在通篇說明書與申請專利範圍中,除非內容清楚指定,否則「一」以及「該」的意義包含這一類敘述包括「一或至少一」該元件或成分。此外,如本揭露所用,除非從特定上下文明顯可見將複數個排除在外,否則單數冠詞亦包括複數個元件或成分的敘述。而且,應用在此描述中與下述之全部申請專利範圍中時,除非內容清楚指定,否則「在其中」的意思可包含「在其中」與「在其上」。在通篇說明書與申請專利範圍所使用之用詞(terms),除有特別註明,通常具有每個用詞使用在此領域中、在此揭露之內容中與特殊內容中的平常意義。某些用以描述本揭露之用詞將於下或在此說明書的別處討論,以提供從業人員(practitioner)在有關本揭露之描述上額外的引導。在通篇說明書之任何地方之例子,包含在此所討論之任何用詞之例子的使用,僅係用以舉例說明,當然不限制本揭露或任何例示用詞之範圍與意義。同樣地,本揭露並不限於此說明書中所提出之各種實施例。The disclosure is particularly described with the following examples, which are used for illustration only, because for those skilled in the art, various changes and modifications can be made without departing from the spirit and scope of the disclosure, so the protection scope of the disclosure shall be determined by the scope of the attached patent application. Throughout the specification and the patent application, unless the content clearly specifies otherwise, the meaning of "one" and "the" includes such a description including "one or at least one" of the element or component. In addition, as used in the disclosure, unless it is clear from the specific context that the plurality is excluded, the singular article also includes the description of plural elements or components. Moreover, when applied in this description and the entire patent application below, unless the content clearly specifies otherwise, the meaning of "in which" may include "in which" and "on which". The terms used throughout the specification and the patent application generally have the ordinary meaning of each term used in the field, in the context of this disclosure, and in the specific context, unless otherwise noted. Certain terms used to describe the present disclosure will be discussed below or elsewhere in this specification to provide practitioners with additional guidance on the description of the present disclosure. Examples anywhere throughout the specification, including the use of examples of any term discussed herein, are used for illustrative purposes only and certainly do not limit the scope and meaning of the present disclosure or any exemplified term. Similarly, the present disclosure is not limited to the various embodiments set forth in this specification.

可了解如在此所使用的用詞「包含(comprising)」、「包含(including)」、「具有(having)」、「含有(containing)」、「包含(involving)」等等,為開放性的(open-ended),即意指包含但不限於。另外,本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制發明作之申請專利範圍。It is understood that the terms "comprising", "including", "having", "containing", "involving", etc. used herein are open-ended, meaning including but not limited to. In addition, any embodiment or patent application scope of the present invention does not need to achieve all the objects, advantages or features disclosed in the present invention. In addition, the abstract part and the title are only used to assist the patent document search, and are not used to limit the patent application scope of the invention.

此外,若使用「電(性)耦接」或「電(性)連接」一詞在此係包含任何直接及間接的電氣連接手段。舉例而言,若文中描述一第一裝置電性耦接於一第二裝置,則代表該第一裝置可直接連接於該第二裝置,或透過其他裝置或連接手段間接地連接至該第二裝置。另外,若描述關於電訊號之傳輸、提供,熟習此技藝者應該可了解電訊號之傳遞過程中可能伴隨衰減或其他非理想性之變化,但電訊號傳輸或提供之來源與接收端若無特別敘明,實質上應視為同一訊號。舉例而言,若由電子電路之端點A傳輸(或提供)電訊號S給電子電路之端點B,其中可能經過一電晶體開關之源汲極兩端及/或可能之雜散電容而產生電壓降,但此設計之目的若非刻意使用傳輸(或提供)時產生之衰減或其他非理想性之變化而達到某些特定的技術效果,電訊號S在電子電路之端點A與端點B應可視為實質上為同一訊號。In addition, if the term "electrically coupled" or "electrically connected" is used, it includes any direct and indirect electrical connection means. For example, if the text describes a first device electrically coupled to a second device, it means that the first device can be directly connected to the second device, or indirectly connected to the second device through other devices or connection means. In addition, if the transmission and provision of electrical signals are described, those familiar with this technology should understand that the transmission process of electrical signals may be accompanied by attenuation or other non-ideal changes, but if the source and receiving end of the transmission or provision of electrical signals are not specifically described, they should be regarded as the same signal in essence. For example, if an electrical signal S is transmitted (or provided) from terminal A of an electronic circuit to terminal B of the electronic circuit, a voltage drop may be generated through the source and drain terminals of a transistor switch and/or possible stray capacitance. However, if the purpose of this design is not to intentionally use the attenuation or other non-ideal changes generated during transmission (or provision) to achieve certain specific technical effects, the electrical signal S at terminals A and B of the electronic circuit should be considered to be essentially the same signal.

除非特別說明,一些條件句或字詞,例如「可以(can)」、「可能(could)」、「也許(might)」,或「可(may)」,通常是試圖表達本案實施例具有,但是也可以解釋成可能不需要的特徵、元件,或步驟。在其他實施例中,這些特徵、元件,或步驟可能是不需要的。Unless otherwise specified, some conditional sentences or words, such as "can", "could", "might", or "may", are generally intended to express that the present embodiment has, but may also be interpreted as features, components, or steps that may not be required. In other embodiments, these features, components, or steps may not be required.

以下將提出一種有機發光二極體顯示裝置及其超音波指紋辨識裝置,其以疏水性絕緣壓電層作為電子元件的絕緣保護層,故可省略晶片黏結薄膜,並利用陽極區塊與陰極區塊取代現有的銀電極層,以避免影響到聲傳的影像訊號。An organic light emitting diode display device and an ultrasonic fingerprint recognition device thereof are proposed below. The hydrophobic insulating piezoelectric layer is used as the insulating protective layer of the electronic components, so the chip bonding film can be omitted, and the anode block and the cathode block are used to replace the existing silver electrode layer to avoid affecting the image signal of the acoustic transmission.

第1圖為本發明之一實施例之超音波指紋辨識裝置之結構立體圖,第2圖為本發明之一實施例之超音波指紋辨識裝置之結構俯視圖。請參閱第1圖與第2圖,超音波指紋辨識裝置1包含一透明基板10、一控制電路層11、多組電極12與一疏水性絕緣壓電層13。疏水性絕緣壓電層13之材質可為共聚合物(copolymer)。較佳地,透明基板10可為,但不限於玻璃基板。控制電路層11設於透明基板10上,多組電極12設於控制電路層11上,並彼此相隔。每一組電極12包含一陽極區塊120與一陰極區塊121。較佳地,陽極區塊120與陰極區塊121之材質為氧化銦錫,但本發明並不以此為限。陽極區塊120與陰極區塊121可以共平面或不共平面。陽極區塊120及其對應之陰極區塊121設於控制電路層11上,並彼此相隔。在本發明之一實施例中,多組電極12之陽極區塊120與陰極區塊121可呈週期性排列。在另一實施例中,多組電極12之陽極區塊120與陰極區塊121呈交替式排列。本發明對於陽極區塊120與陰極區塊121之尺寸與排列方式均無限制。疏水性絕緣壓電層13設於多組電極12之陽極區塊120與陰極區塊121上。疏水性絕緣壓電層13可以印刷在同一平面上,以確保自身有均勻的厚度。陽極區塊120及其對應之陰極區塊121之間可呈現空隙或填滿絕緣材質。或者,疏水性絕緣壓電層13形成於陽極區塊120及其對應之陰極區塊121之間。為了方便與清晰,在此實施例中,陽極區塊120及其對應之陰極區塊121之間以呈現空隙為例。疏水性絕緣壓電層13作為電子元件的絕緣保護層,故可省略晶片黏結薄膜(DAF),並利用陽極區塊120與陰極區塊121取代現有的銀電極層,以避免影響到聲傳的影像訊號。疏水性絕緣壓電層13與多組電極12可以形成平行排列的電容結構,即位於虛框位置的側向電容。FIG. 1 is a structural three-dimensional diagram of an ultrasonic fingerprint recognition device according to an embodiment of the present invention, and FIG. 2 is a structural top view of an ultrasonic fingerprint recognition device according to an embodiment of the present invention. Referring to FIG. 1 and FIG. 2, the ultrasonic fingerprint recognition device 1 comprises a transparent substrate 10, a control circuit layer 11, a plurality of sets of electrodes 12, and a hydrophobic insulating piezoelectric layer 13. The material of the hydrophobic insulating piezoelectric layer 13 may be a copolymer. Preferably, the transparent substrate 10 may be, but is not limited to, a glass substrate. The control circuit layer 11 is disposed on the transparent substrate 10, and the plurality of sets of electrodes 12 are disposed on the control circuit layer 11 and are separated from each other. Each set of electrodes 12 includes an anode block 120 and a cathode block 121. Preferably, the material of the anode block 120 and the cathode block 121 is indium tin oxide, but the present invention is not limited thereto. The anode block 120 and the cathode block 121 can be coplanar or non-coplanar. The anode block 120 and its corresponding cathode block 121 are arranged on the control circuit layer 11 and are separated from each other. In one embodiment of the present invention, the anode blocks 120 and the cathode blocks 121 of multiple sets of electrodes 12 can be arranged periodically. In another embodiment, the anode blocks 120 and cathode blocks 121 of the plurality of electrode groups 12 are arranged alternately. The present invention has no limitation on the size and arrangement of the anode blocks 120 and cathode blocks 121. The hydrophobic insulating piezoelectric layer 13 is disposed on the anode blocks 120 and cathode blocks 121 of the plurality of electrode groups 12. The hydrophobic insulating piezoelectric layer 13 can be printed on the same plane to ensure that it has a uniform thickness. There can be a gap between the anode block 120 and its corresponding cathode block 121 or it can be filled with insulating material. Alternatively, the hydrophobic insulating piezoelectric layer 13 is formed between the anode block 120 and its corresponding cathode block 121. For convenience and clarity, in this embodiment, a gap is shown between the anode block 120 and its corresponding cathode block 121. The hydrophobic insulating piezoelectric layer 13 serves as an insulating protective layer for electronic components, so the chip bonding film (DAF) can be omitted, and the anode block 120 and the cathode block 121 are used to replace the existing silver electrode layer to avoid affecting the image signal of the acoustic transmission. The hydrophobic insulating piezoelectric layer 13 and the plurality of electrodes 12 can form a capacitor structure arranged in parallel, namely a lateral capacitor located at the virtual frame position.

當陽極區塊120及其對應之陰極區塊121上以閘極線施加電壓時,可以形成y方向的電偶極矩與電場,藉此配合疏水性絕緣壓電層13之壓電應變常數,形成z方向的形變。若陽極區塊120及其對應之陰極區塊121上施加高頻交流電壓,則會產生z方向的超音波,形成駐波。超音波若碰到指紋的波峰與波谷,以形成強與弱的反彈,待回傳到疏水性絕緣壓電層13後,會造成其形變並進行正壓電轉換,以於陽極區塊120及其對應之陰極區塊121上產生電壓準位的差異,藉此描述指紋之波峰與波谷的圖譜。也就是說,若在z方向對疏水性絕緣壓電層13以指腹施力造成z方向的形變,藉此配合疏水性絕緣壓電層13之壓電應變常數,則以正壓電轉換將形變轉換成y方向的電偶極矩與電場,以紀錄指腹上的凹凸點(ridge characteristics)。When a voltage is applied to the anode block 120 and its corresponding cathode block 121 through a gate line, an electric dipole moment and an electric field in the y direction can be formed, thereby cooperating with the piezoelectric strain constant of the hydrophobic insulating piezoelectric layer 13 to form a deformation in the z direction. If a high-frequency alternating voltage is applied to the anode block 120 and its corresponding cathode block 121, an ultrasonic wave in the z direction will be generated to form a stationary wave. If the ultrasound hits the crests and troughs of the fingerprint, strong and weak rebounds are formed. After being transmitted back to the hydrophobic insulating piezoelectric layer 13, it will cause its deformation and perform positive piezoelectric conversion, so as to generate a difference in voltage level on the anode block 120 and its corresponding cathode block 121, thereby describing the spectrum of the crests and troughs of the fingerprint. In other words, if the hydrophobic insulating piezoelectric layer 13 is deformed in the z direction by applying force with the fingertips, thereby cooperating with the piezoelectric strain constant of the hydrophobic insulating piezoelectric layer 13, the deformation is converted into the electric dipole moment and electric field in the y direction by positive piezoelectric conversion, so as to record the ridge characteristics on the fingertips.

第3圖為本發明之一實施例之控制電路層之等效電路示意圖。請參閱第2圖與第3圖,在本發明之某些實施例中,控制電路層11可包含一第一場效電晶體111、一第二場效電晶體112、一第三場效電晶體113、一第四場效電晶體114、一二極體115與資料線116。第一場效電晶體111連接於一第一偏壓端B1與陽極區塊120之間,第二場效電晶體112與第三場效電晶體113連接於一第二偏壓端B2與資料線116之間。二極體115之陽極連接第一偏壓端B1,陰極連接陽極區塊120。第四場效電晶體114連接於一重置電壓端R與資料線116之間,其中資料線116及第一場效電晶體111、第三場效電晶體113與第四場效電晶體114之控制端連接一存取積體電路2。疏水性絕緣壓電層13、陽極區塊120與其對應之陰極區塊121形成寄生電容C。FIG. 3 is an equivalent circuit diagram of a control circuit layer of an embodiment of the present invention. Referring to FIG. 2 and FIG. 3, in some embodiments of the present invention, the control circuit layer 11 may include a first field effect transistor 111, a second field effect transistor 112, a third field effect transistor 113, a fourth field effect transistor 114, a diode 115 and a data line 116. The first field effect transistor 111 is connected between a first bias terminal B1 and an anode block 120, and the second field effect transistor 112 and the third field effect transistor 113 are connected between a second bias terminal B2 and the data line 116. The anode of the diode 115 is connected to the first bias terminal B1, and the cathode is connected to the anode block 120. The fourth field effect transistor 114 is connected between a reset voltage terminal R and the data line 116, wherein the data line 116 and the control terminals of the first field effect transistor 111, the third field effect transistor 113 and the fourth field effect transistor 114 are connected to an access integrated circuit 2. The hydrophobic insulating piezoelectric layer 13, the anode block 120 and the corresponding cathode block 121 form a parasitic capacitor C.

第4圖為本發明之一實施例之有機發光二極體顯示裝置之結構剖視圖。請參閱第4圖與第2圖,以下介紹有機發光二極體顯示裝置,其包含一透明基板10、一控制電路層11、多組電極12、一疏水性絕緣壓電層13、一雙面膠層14與一有機發光二極體顯示模組15。控制電路層11設於透明基板10之底部,多組電極12設於控制電路層10之底部,並彼此相隔。每一組電極12包含一陽極區塊120與一陰極區塊121,陽極區塊120及其對應之陰極區塊121設於控制電路層11之底部,並彼此相隔。疏水性絕緣壓電層13設於多組電極12之陽極區塊120與陰極區塊121之底部。雙面膠層14設於透明基板10之頂部,有機發光二極體顯示模組15設於雙面膠層14之頂部。透明基板10、控制電路層11、多組電極12與疏水性絕緣壓電層13即上述的超音波指紋辨識裝置,於此不再贅述。以下配合控制電路層11之操作說明超音波指紋辨識裝置之可行性。使用時,指腹3可貼於有機發光二極體顯示模組15之頂部。FIG. 4 is a cross-sectional view of the structure of an organic light emitting diode display device of an embodiment of the present invention. Referring to FIG. 4 and FIG. 2, the organic light emitting diode display device is described below, which includes a transparent substrate 10, a control circuit layer 11, a plurality of electrodes 12, a hydrophobic insulating piezoelectric layer 13, a double-sided adhesive layer 14 and an organic light emitting diode display module 15. The control circuit layer 11 is disposed at the bottom of the transparent substrate 10, and the plurality of electrodes 12 are disposed at the bottom of the control circuit layer 10 and are spaced apart from each other. Each set of electrodes 12 includes an anode block 120 and a cathode block 121. The anode block 120 and its corresponding cathode block 121 are disposed at the bottom of the control circuit layer 11 and are separated from each other. The hydrophobic insulating piezoelectric layer 13 is disposed at the bottom of the anode block 120 and the cathode block 121 of the plurality of sets of electrodes 12. The double-sided adhesive layer 14 is disposed on the top of the transparent substrate 10, and the organic light-emitting diode display module 15 is disposed on the top of the double-sided adhesive layer 14. The transparent substrate 10, the control circuit layer 11, the plurality of electrodes 12 and the hydrophobic insulating piezoelectric layer 13 are the ultrasonic fingerprint recognition device mentioned above, which will not be described in detail here. The feasibility of the ultrasonic fingerprint recognition device is explained below in conjunction with the operation of the control circuit layer 11. When in use, the fingertip 3 can be attached to the top of the organic light-emitting diode display module 15.

第5圖為本發明之一實施例之控制電路層進行逆壓電轉換之操作示意圖。請參閱第5圖與第4圖,當第一偏壓端B1之電壓為4伏特,且陰極區塊121之電壓為0伏特時,存取積體電路2可導通第一場效電晶體111,使第一偏壓端B1驅使電流通過第一場效電晶體111以注入陽極區塊120,且疏水性絕緣壓電層13根據陽極區塊120之電壓變化產生形變,以完成逆壓電轉換。因為第一場效電晶體111在導通時其電阻較二極體115之電阻低,所以此時二極體115並無電流通過。FIG. 5 is a schematic diagram of the operation of the control circuit layer of an embodiment of the present invention for reverse piezoelectric conversion. Please refer to FIG. 5 and FIG. 4. When the voltage of the first bias terminal B1 is 4 volts and the voltage of the cathode block 121 is 0 volts, the access integrated circuit 2 can turn on the first field effect transistor 111, so that the first bias terminal B1 drives the current to pass through the first field effect transistor 111 to be injected into the anode block 120, and the hydrophobic insulating piezoelectric layer 13 is deformed according to the voltage change of the anode block 120 to complete the reverse piezoelectric conversion. Because the resistance of the first field effect transistor 111 is lower than the resistance of the diode 115 when it is turned on, no current flows through the diode 115 at this time.

第6圖為本發明之一實施例之控制電路層對陽極區塊進行放電時之操作示意圖。請參閱第6圖,當第一偏壓端B1之電壓為4伏特,且陰極區塊121因為正壓電轉換產生交流的弦波電壓時,陰極區塊121之電壓可能為弦波電壓之波峰電壓或波谷電壓。當陰極區塊121之電壓為波峰電壓時,陽極區塊120耦合高電壓,存取積體電路2導通第一場效電晶體111,使陽極區塊120對第一偏壓端B1進行放電,且陽極區塊120之電壓趨近於4伏特。FIG6 is a schematic diagram of the operation of the control circuit layer of an embodiment of the present invention when discharging the anode block. Referring to FIG6, when the voltage of the first bias terminal B1 is 4 volts and the cathode block 121 generates an alternating sine wave voltage due to positive voltage conversion, the voltage of the cathode block 121 may be the peak voltage or the valley voltage of the sine wave voltage. When the voltage of the cathode block 121 is a peak voltage, the anode block 120 couples a high voltage, and the access integrated circuit 2 turns on the first field effect transistor 111, so that the anode block 120 discharges the first bias terminal B1, and the voltage of the anode block 120 approaches 4 volts.

第7圖為本發明之一實施例之控制電路層對陽極區塊進行充電時之操作示意圖。請參閱第7圖,當第一偏壓端B1之電壓為4伏特,且陰極區塊121之電壓為波谷電壓時,陽極區塊120耦合低電壓,存取積體電路2關斷第一場效電晶體111,使第一偏壓端B1對陽極區塊120進行充電,且陽極區塊120之電壓趨近於4伏特。根據第6圖與第7圖之機制,可以避免存取積體電路2接收到不想要的訊號。FIG. 7 is a schematic diagram of the operation of the control circuit layer of one embodiment of the present invention when charging the anode block. Referring to FIG. 7, when the voltage of the first bias terminal B1 is 4 volts and the voltage of the cathode block 121 is the valley voltage, the anode block 120 is coupled with a low voltage, and the access integrated circuit 2 turns off the first field effect transistor 111, so that the first bias terminal B1 charges the anode block 120, and the voltage of the anode block 120 approaches 4 volts. According to the mechanism of FIG. 6 and FIG. 7, it is possible to prevent the access integrated circuit 2 from receiving unwanted signals.

第8圖為本發明之一實施例之控制電路層提供亮訊號之操作示意圖,第9圖為本發明之一實施例之控制電路層提供暗訊號之操作示意圖,第10圖為本發明之一實施例之陽極區塊之弦波電壓之比較波形圖。請參閱第8圖與第10圖,當陰極區塊121之電壓為零,且正壓電轉換發生時,陽極區塊120會出現弦波電壓,如第10圖所示。假設存取積體電路2關斷第一場效電晶體111、第三場效電晶體113與第四場效電晶體114,且第一偏壓端B1之電壓以Dbias表示。當陽極區塊120之弦波電壓大於電壓Dbias時,二極體115無法導通,第二場效電晶體112會被導通,使第二偏壓端B2提供電流通過第二場效電晶體112,以形成亮訊號。請參閱第9圖與第10圖,當陽極區塊120之弦波電壓小於電壓Dbias時,二極體115被導通,使陽極區塊120之電壓被限制在電壓Dbias,且第二場效電晶體112會被關斷,使第二偏壓端B2無法提供電流通過第二場效電晶體112,以形成暗訊號。也就是說,二極體115可當作一波峰偵測器,陽極區塊120之弦波電壓只有上半周的訊號會被傳送到存取積體電路2,下半周的訊號都會被濾除。因為存取積體電路2關斷第一場效電晶體111、第三場效電晶體113與第四場效電晶體114,所以第二場效電晶體112可以維持電壓準位來儲存電荷,以確認指紋圖譜的灰階訊號達到穩定。FIG. 8 is a schematic diagram of the operation of the control circuit layer of one embodiment of the present invention providing a bright signal, FIG. 9 is a schematic diagram of the operation of the control circuit layer of one embodiment of the present invention providing a dark signal, and FIG. 10 is a comparative waveform diagram of the sine wave voltage of the anode block of one embodiment of the present invention. Please refer to FIG. 8 and FIG. 10. When the voltage of the cathode block 121 is zero and positive voltage conversion occurs, a sine wave voltage will appear in the anode block 120, as shown in FIG. 10. Assume that the access integrated circuit 2 turns off the first field effect transistor 111, the third field effect transistor 113 and the fourth field effect transistor 114, and the voltage of the first bias terminal B1 is represented by Dbias. When the sine wave voltage of the anode block 120 is greater than the voltage Dbias, the diode 115 cannot be turned on, and the second field effect transistor 112 will be turned on, so that the second bias terminal B2 provides a current to pass through the second field effect transistor 112 to form a bright signal. Please refer to Figures 9 and 10. When the sine wave voltage of the anode block 120 is less than the voltage Dbias, the diode 115 is turned on, so that the voltage of the anode block 120 is limited to the voltage Dbias, and the second field effect transistor 112 will be turned off, so that the second bias terminal B2 cannot provide a current to pass through the second field effect transistor 112 to form a dark signal. That is, the diode 115 can be used as a peak detector, and only the first half cycle of the sine wave voltage of the anode block 120 will be transmitted to the access integrated circuit 2, and the second half cycle of the signal will be filtered out. Because the access integrated circuit 2 turns off the first field effect transistor 111, the third field effect transistor 113 and the fourth field effect transistor 114, the second field effect transistor 112 can maintain the voltage level to store the charge to confirm that the grayscale signal of the fingerprint spectrum is stable.

第11圖為本發明之一實施例之控制電路層輸出訊號給存取積體電路之操作示意圖。請參閱第11圖,當存取積體電路2關斷第一場效電晶體111與第四場效電晶體114,且導通第三場效電晶體113時,亮、暗訊號可以透過第二場效電晶體112、第三場效電晶體113與資料線116輸出給存取積體電路2,以儲存指紋圖譜。FIG. 11 is a schematic diagram of the operation of the control circuit layer outputting signals to the access integrated circuit of one embodiment of the present invention. Referring to FIG. 11, when the access integrated circuit 2 turns off the first field effect transistor 111 and the fourth field effect transistor 114, and turns on the third field effect transistor 113, the bright and dark signals can be output to the access integrated circuit 2 through the second field effect transistor 112, the third field effect transistor 113 and the data line 116 to store the fingerprint spectrum.

根據上述實施例,有機發光二極體顯示裝置及其超音波指紋辨識裝置以疏水性絕緣壓電層作為電子元件的絕緣保護層,故可省略晶片黏結薄膜,並利用陽極區塊與陰極區塊取代現有的銀電極層,以避免影響到聲傳的影像訊號。According to the above embodiments, the organic light emitting diode display device and the ultrasonic fingerprint recognition device thereof use the hydrophobic insulating piezoelectric layer as the insulating protective layer of the electronic components, so the chip bonding film can be omitted, and the anode block and the cathode block are used to replace the existing silver electrode layer to avoid affecting the image signal of the acoustic transmission.

以上所述者,僅為本發明一較佳實施例而已,並非用來限定本發明實施之範圍,故舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, all equivalent changes and modifications based on the shape, structure, features and spirit described in the patent application scope of the present invention should be included in the patent application scope of the present invention.

1:超音波指紋辨識裝置 10:透明基板 11:控制電路層 111:第一場效電晶體 112:第二場效電晶體 113:第三場效電晶體 114:第四場效電晶體 115:二極體 116:資料線 12:電極 120:陽極區塊 121:陰極區塊 13:疏水性絕緣壓電層 14:雙面膠層 15:有機發光二極體顯示模組 2:存取積體電路 3:指腹 B1:第一偏壓端 B2:第二偏壓端 R:重置電壓端 C:寄生電容1: Ultrasonic fingerprint recognition device 10: Transparent substrate 11: Control circuit layer 111: First field effect transistor 112: Second field effect transistor 113: Third field effect transistor 114: Fourth field effect transistor 115: Diode 116: Data line 12: Electrode 120: Anode block 121: Cathode block 13: Hydrophobic insulating piezoelectric layer 14: Double-sided adhesive layer 15: Organic light-emitting diode display module 2: Access integrated circuit 3: Finger pulp B1: First bias terminal B2: Second bias terminal R: Reset voltage terminal C: Parasitic capacitance

第1圖為本發明之一實施例之超音波指紋辨識裝置之結構立體圖。 第2圖為本發明之一實施例之超音波指紋辨識裝置之結構俯視圖。 第3圖為本發明之一實施例之控制電路層之等效電路示意圖。 第4圖為本發明之一實施例之有機發光二極體顯示裝置之結構剖視圖。 第5圖為本發明之一實施例之控制電路層進行逆壓電轉換之操作示意圖。 第6圖為本發明之一實施例之控制電路層對陽極區塊進行放電時之操作示意圖。 第7圖為本發明之一實施例之控制電路層對陽極區塊進行充電時之操作示意圖。 第8圖為本發明之一實施例之控制電路層提供亮訊號之操作示意圖。 第9圖為本發明之一實施例之控制電路層提供暗訊號之操作示意圖。 第10圖為本發明之一實施例之陽極區塊之弦波電壓之比較波形圖。 第11圖為本發明之一實施例之控制電路層輸出訊號給存取積體電路之操作示意圖。 Figure 1 is a structural three-dimensional diagram of an ultrasonic fingerprint recognition device of one embodiment of the present invention. Figure 2 is a structural top view of an ultrasonic fingerprint recognition device of one embodiment of the present invention. Figure 3 is a schematic diagram of an equivalent circuit of a control circuit layer of one embodiment of the present invention. Figure 4 is a cross-sectional view of an organic light-emitting diode display device of one embodiment of the present invention. Figure 5 is an operation schematic diagram of the control circuit layer of one embodiment of the present invention performing reverse piezoelectric conversion. Figure 6 is an operation schematic diagram of the control circuit layer of one embodiment of the present invention discharging the anode block. Figure 7 is an operation schematic diagram of the control circuit layer of one embodiment of the present invention charging the anode block. FIG. 8 is a schematic diagram of the operation of the control circuit layer of one embodiment of the present invention providing a bright signal. FIG. 9 is a schematic diagram of the operation of the control circuit layer of one embodiment of the present invention providing a dark signal. FIG. 10 is a comparative waveform diagram of the sine wave voltage of the anode block of one embodiment of the present invention. FIG. 11 is a schematic diagram of the operation of the control circuit layer of one embodiment of the present invention outputting a signal to the access integrated circuit.

1:超音波指紋辨識裝置 1: Ultrasonic fingerprint recognition device

10:透明基板 10: Transparent substrate

11:控制電路層 11: Control circuit layer

12:電極 12: Electrode

120:陽極區塊 120: Anode block

121:陰極區塊 121: cathode block

13:疏水性絕緣壓電層 13: Hydrophobic insulating piezoelectric layer

Claims (13)

一種超音波指紋辨識裝置,包含: 一透明基板; 一控制電路層,設於該透明基板上; 多組電極,設於該控制電路層上,並彼此相隔,每一該組電極包含一陽極區塊與一陰極區塊,該陽極區塊及其對應之該陰極區塊設於該控制電路層上,並彼此相隔;以及 一疏水性絕緣壓電層,設於該多組電極之該陽極區塊與該陰極區塊上。 An ultrasonic fingerprint recognition device comprises: a transparent substrate; a control circuit layer disposed on the transparent substrate; a plurality of sets of electrodes disposed on the control circuit layer and separated from each other, each set of electrodes comprising an anode block and a cathode block, the anode block and its corresponding cathode block disposed on the control circuit layer and separated from each other; and a hydrophobic insulating piezoelectric layer disposed on the anode block and the cathode block of the plurality of sets of electrodes. 如請求項1所述之超音波指紋辨識裝置,其中該多組電極之該陽極區塊與該陰極區塊呈週期性排列。The ultrasonic fingerprint recognition device as described in claim 1, wherein the anode blocks and the cathode blocks of the multiple sets of electrodes are arranged periodically. 如請求項2所述之超音波指紋辨識裝置,其中該多組電極之該陽極區塊與該陰極區塊呈交替式排列。The ultrasonic fingerprint recognition device as described in claim 2, wherein the anode blocks and the cathode blocks of the multiple sets of electrodes are arranged alternately. 如請求項1所述之超音波指紋辨識裝置,其中該陽極區塊及其對應之該陰極區塊之間呈現空隙或填滿絕緣材質。An ultrasonic fingerprint recognition device as described in claim 1, wherein a gap exists between the anode block and the corresponding cathode block or is filled with insulating material. 如請求項1所述之超音波指紋辨識裝置,其中該疏水性絕緣壓電層形成於該陽極區塊及其對應之該陰極區塊之間。The ultrasonic fingerprint recognition device as described in claim 1, wherein the hydrophobic insulating piezoelectric layer is formed between the anode block and the cathode block corresponding thereto. 如請求項1所述之超音波指紋辨識裝置,其中該控制電路層包含: 一第一場效電晶體,連接於一第一偏壓端與該陽極區塊之間; 一第二場效電晶體與一第三場效電晶體,連接於一第二偏壓端與資料線之間; 一二極體,其陽極連接該第一偏壓端,陰極連接該陽極區塊;以及 一第四場效電晶體,連接於一重置電壓端與該資料線之間,其中該資料線及該第一場效電晶體、該第三場效電晶體與該第四場效電晶體之控制端連接一存取積體電路。 The ultrasonic fingerprint recognition device as described in claim 1, wherein the control circuit layer comprises: a first field effect transistor connected between a first bias terminal and the anode block; a second field effect transistor and a third field effect transistor connected between a second bias terminal and a data line; a diode, whose anode is connected to the first bias terminal and whose cathode is connected to the anode block; and a fourth field effect transistor connected between a reset voltage terminal and the data line, wherein the data line and the control terminals of the first field effect transistor, the third field effect transistor and the fourth field effect transistor are connected to an access integrated circuit. 一種有機發光二極體顯示裝置,包含: 一透明基板; 一控制電路層,設於該透明基板之底部; 多組電極,設於該控制電路層之底部,並彼此相隔,每一該組電極包含一陽極區塊與一陰極區塊,該陽極區塊及其對應之該陰極區塊設於該控制電路層之該底部,並彼此相隔; 一疏水性絕緣壓電層,設於該多組電極之該陽極區塊與該陰極區塊之底部; 一雙面膠層,設於該透明基板之頂部;以及 一有機發光二極體顯示模組,設於該雙面膠層之頂部。 An organic light-emitting diode display device comprises: A transparent substrate; A control circuit layer disposed at the bottom of the transparent substrate; A plurality of sets of electrodes disposed at the bottom of the control circuit layer and separated from each other, each set of electrodes comprising an anode block and a cathode block, the anode block and its corresponding cathode block disposed at the bottom of the control circuit layer and separated from each other; A hydrophobic insulating piezoelectric layer disposed at the bottom of the anode block and the cathode block of the plurality of sets of electrodes; A double-sided adhesive layer disposed at the top of the transparent substrate; and An organic light emitting diode display module is disposed on the top of the double-sided adhesive layer. 如請求項7所述之有機發光二極體顯示裝置,其中該多組電極之該陽極區塊與該陰極區塊呈週期性排列。An organic light-emitting diode display device as described in claim 7, wherein the anode blocks and the cathode blocks of the multiple sets of electrodes are arranged periodically. 如請求項8所述之有機發光二極體顯示裝置,其中該多組電極之該陽極區塊與該陰極區塊呈交替式排列。An organic light-emitting diode display device as described in claim 8, wherein the anode blocks and the cathode blocks of the multiple sets of electrodes are arranged alternately. 如請求項7所述之有機發光二極體顯示裝置,其中該陽極區塊及其對應之該陰極區塊之間呈現空隙或填滿絕緣材質。An organic light-emitting diode display device as described in claim 7, wherein a gap is present between the anode block and the corresponding cathode block or the gap is filled with insulating material. 如請求項7所述之有機發光二極體顯示裝置,其中該疏水性絕緣壓電層形成於該陽極區塊及其對應之該陰極區塊之間。An organic light-emitting diode display device as described in claim 7, wherein the hydrophobic insulating piezoelectric layer is formed between the anode block and the cathode block corresponding thereto. 如請求項7所述之有機發光二極體顯示裝置,其中該控制電路層包含: 一第一場效電晶體,連接於一第一偏壓端與該陽極區塊之間; 一第二場效電晶體與一第三場效電晶體,連接於一第二偏壓端與資料線之間; 一二極體,其陽極連接該第一偏壓端,陰極連接該陽極區塊;以及 An organic light-emitting diode display device as described in claim 7, wherein the control circuit layer comprises: a first field effect transistor connected between a first bias terminal and the anode block; a second field effect transistor and a third field effect transistor connected between a second bias terminal and the data line; a diode, whose anode is connected to the first bias terminal and whose cathode is connected to the anode block; and 一第四場效電晶體,連接於一重置電壓端與該資料線之間,其中該資料線及該第一場效電晶體、該第三場效電晶體與該第四場效電晶體之控制端連接一存取積體電路。A fourth field effect transistor is connected between a reset voltage terminal and the data line, wherein the data line and the control terminals of the first field effect transistor, the third field effect transistor and the fourth field effect transistor are connected to an access integrated circuit.
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