TWI864846B - Deposition layer removal method - Google Patents
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- TWI864846B TWI864846B TW112123954A TW112123954A TWI864846B TW I864846 B TWI864846 B TW I864846B TW 112123954 A TW112123954 A TW 112123954A TW 112123954 A TW112123954 A TW 112123954A TW I864846 B TWI864846 B TW I864846B
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 230000008021 deposition Effects 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000007921 spray Substances 0.000 claims abstract description 33
- 238000005507 spraying Methods 0.000 claims abstract description 12
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 130
- 239000003153 chemical reaction reagent Substances 0.000 claims description 47
- 238000004062 sedimentation Methods 0.000 claims description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 7
- 239000013043 chemical agent Substances 0.000 abstract 10
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 238000011109 contamination Methods 0.000 description 15
- 125000006850 spacer group Chemical group 0.000 description 13
- 239000013049 sediment Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000001914 filtration Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 229940079593 drug Drugs 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BVSHTEBQPBBCFT-UHFFFAOYSA-N gallium(iii) sulfide Chemical compound [S-2].[S-2].[S-2].[Ga+3].[Ga+3] BVSHTEBQPBBCFT-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本揭露是有關於一種沉積層移除方法,特別是有關於一種用於回收彩色濾光片的沉積層移除方法。The present disclosure relates to a deposited layer removal method, and more particularly to a deposited layer removal method for recycling a color filter.
彩色濾光基板在各個膜層的製程中可能發生異物附著或光阻殘留等缺陷,導致後續製程發生膜層剝落(peeling)或顯示異常等問題,造成良率下降。因此,為了避免上述問題發生,會針對表面具有不良缺陷的彩色濾光基板進行重工(rework),以去除玻璃基板上的不良缺陷,例如去除彩色濾光單元、導電層、遮光層、間隔物、異物或殘留光阻等,接著重新投入產線或轉為控片(dummy glass)供其他製程階段使用。During the manufacturing process of each film layer of the color filter substrate, defects such as foreign matter adhesion or residual photoresist may occur, resulting in peeling of the film layer or abnormal display in the subsequent process, resulting in a decrease in yield. Therefore, in order to avoid the above problems, the color filter substrate with surface defects will be reworked to remove the defects on the glass substrate, such as removing the color filter unit, conductive layer, light shielding layer, spacer, foreign matter or residual photoresist, and then put back into the production line or converted into a dummy glass for use in other process stages.
目前常見用以移除彩色濾光單元、導電層、遮光層、間隔物、異物或殘留光阻等沉積層或材料的方法為使用包括特殊配方的藥劑噴淋(spray),使沉積層以碎屑的形式從彩色濾光基板上剝離。在這個製程中,噴淋出的藥劑會經由管路循環使用。Currently, the common method for removing deposited layers or materials such as color filter units, conductive layers, light shielding layers, spacers, foreign matter or residual photoresist is to use a specially formulated agent to spray, so that the deposited layer is peeled off from the color filter substrate in the form of debris. In this process, the sprayed agent is circulated through a pipeline.
然而,沉積層碎屑通常會在製程的特定步驟中與藥劑一同回收,因此在藥劑重新進入管路循環前,會進行過濾的步驟。而由於濾心的髒汙程度隨著使用時間提升,通過濾心重新進入管路的藥劑流量逐漸降低。在這種情況下,需要定期停機以更換用以過濾的濾心,壓縮機台正常運行的時間。However, the sedimentation debris is usually recovered together with the reagents in a specific step of the process, so a filtering step is performed before the reagents re-enter the pipeline for circulation. As the degree of contamination of the filter core increases with the use time, the flow rate of the reagent re-entering the pipeline through the filter core gradually decreases. In this case, it is necessary to shut down the machine regularly to replace the filter core used for filtration, compressing the normal operation time of the machine.
因此,如何提出一種可解決上述問題的沉積層移除方法,是目前業界亟欲投入研發資源解決的問題之一。Therefore, how to come up with a deposition layer removal method that can solve the above problems is one of the issues that the industry is eager to invest research and development resources to solve.
有鑑於此,本揭露之一目的在於提出一種可解決上述問題的沉積層移除方法。In view of this, one purpose of the present disclosure is to provide a deposition layer removal method that can solve the above problems.
本揭露的一方面是有關於一種沉積層移除方法包括藉由噴淋系統噴灑第一藥劑於具有沉積層於其上的基板,使得沉積層碎屑自基板剝離。沉積層移除方法還包括將第一藥劑與沉積層碎屑回收至暫存槽。沉積層移除方法還包括藉由變頻泵驅使沉積層碎屑與第一藥劑流經濾心,使得濾心吸附沉積層碎屑,並使第一藥劑通過濾心且重新進入噴淋系統。沉積層移除方法還包括獲取通過濾心的第一藥劑的流量值。沉積層移除方法還包括當流量值小於第一閾值且大於第二閾值時,排放沉積層碎屑與第一藥劑位於暫存槽內的一部分,並加入第二藥劑至暫存槽內,使得通過濾心的第一藥劑的流量值上升,其中該第二藥劑與該第一藥劑包含相同成分。沉積層移除方法還包括當流量值小於第二閾值時,替換濾心。One aspect of the present disclosure is related to a deposition layer removal method, which includes spraying a first agent on a substrate having a deposition layer thereon by a spray system, so that the deposition layer debris is peeled off from the substrate. The deposition layer removal method also includes recycling the first agent and the deposition layer debris to a temporary storage tank. The deposition layer removal method also includes driving the deposition layer debris and the first agent through a filter core by a variable frequency pump, so that the filter core adsorbs the deposition layer debris, and the first agent passes through the filter core and re-enters the spray system. The deposition layer removal method also includes obtaining a flow value of the first agent passing through the filter core. The deposit layer removal method further includes discharging the deposit layer debris and a portion of the first reagent in the temporary storage tank when the flow value is less than the first threshold value and greater than the second threshold value, and adding the second reagent into the temporary storage tank, so that the flow value of the first reagent passing through the filter element increases, wherein the second reagent and the first reagent contain the same component. The deposit layer removal method further includes replacing the filter element when the flow value is less than the second threshold value.
在一些實施方式中,在排放沉積層碎屑與第一藥劑位於暫存槽內的一部分,並加入第二藥劑之後,變頻泵的運轉頻率降低。In some embodiments, after the sedimentation layer debris and a portion of the first reagent in the temporary storage tank are discharged and the second reagent is added, the operating frequency of the variable frequency pump is reduced.
在一些實施方式中,沉積層碎屑與第一藥劑位於暫存槽內的一部分佔暫存槽內的沉積層碎屑與第一藥劑的總量的14.55%到15.45%。In some embodiments, a portion of the deposition layer debris and the first agent in the temporary storage tank accounts for 14.55% to 15.45% of the total amount of the deposition layer debris and the first agent in the temporary storage tank.
在一些實施方式中,沉積層移除方法還包括藉由控制閥排放沉積層碎屑與第一藥劑位於暫存槽內的一部分以及藉由暫存槽的注入口加入第二藥劑。In some embodiments, the deposition layer removal method further includes discharging the deposition layer debris and a portion of the first agent in the temporary storage tank through a control valve and adding a second agent through an injection port of the temporary storage tank.
在一些實施方式中,第一藥劑包括氫氧化鉀或硫化鎵。In some embodiments, the first agent comprises potassium hydroxide or gallium sulfide.
在一些實施方式中,第一藥劑自噴淋系統噴灑出時,具有在65°C與75°C之間的溫度。In some embodiments, the first agent has a temperature between 65°C and 75°C when sprayed from the spray system.
在一些實施方式中,第一閾值為80 L/min且第二閾值為50 L/min。In some embodiments, the first threshold is 80 L/min and the second threshold is 50 L/min.
在一些實施方式中,沉積層移除方法還包括在藉由噴淋系統噴灑第一藥劑的同時,藉由傳送裝置將基板自腔室的入口傳送至腔室的出口。In some embodiments, the deposition layer removal method further includes transferring the substrate from an inlet of the chamber to an outlet of the chamber by a transfer device while spraying the first agent by a spray system.
在一些實施方式中,沉積層移除方法還包括在噴灑第一藥劑期間對基板執行機械摩擦製程,以將沉積層碎屑自基板刮除。In some embodiments, the deposition layer removal method further includes performing a mechanical friction process on the substrate during the spraying of the first chemical to scrape off the deposition layer debris from the substrate.
在一些實施方式中,沉積層移除方法還包括在替換濾心的同時,將暫存槽內的沉積層碎屑與第一藥劑替換為第二藥劑。In some embodiments, the deposit layer removal method further includes replacing the deposit layer debris and the first agent in the temporary tank with a second agent while replacing the filter.
綜上所述,於本揭露的一些實施方式的沉積層移除方法中,藉由監控變頻泵運轉頻率與藥劑流量的變化,在藥劑中含有的沉積層碎屑佔比過高時,適時排出部分混合有沉積層碎屑的藥劑,並加入未含有沉積層碎屑的新藥劑,可以確保進入噴淋系統的藥劑流量維持實質上固定。相對於常見的沉積層移除方法,可以使噴淋系統的效率不會隨濾心髒汙程度增加而明顯地惡化,並可以達到延長濾心使用壽命的效果,減少因替換濾心導致的停機時間。In summary, in the deposit removal method of some embodiments of the present disclosure, by monitoring the change in the operating frequency of the variable frequency pump and the flow rate of the reagent, when the proportion of the deposit debris contained in the reagent is too high, a part of the reagent mixed with the deposit debris is discharged in time, and a new reagent without the deposit debris is added, so as to ensure that the flow rate of the reagent entering the spray system remains substantially fixed. Compared with the common deposit removal method, the efficiency of the spray system will not be significantly deteriorated as the degree of contamination of the filter increases, and the service life of the filter can be extended, and the downtime caused by replacing the filter can be reduced.
本揭露的這些與其他方面通過結合圖式對優選實施例進行以下的描述,本揭露的實施例將變得顯而易見,但在不脫離本公開的新穎概念的精神和範圍的情況下,可以進行其中的變化和修改。These and other aspects of the present disclosure will become apparent from the following description of preferred embodiments in conjunction with the drawings, but variations and modifications may be made therein without departing from the spirit and scope of the novel concepts of the present disclosure.
以下揭露內容在此將透過圖式及參考資料被更完整描述,一些示例性的實施例被繪示在圖式中。本揭露可以被以不同形式實施並且不應被以下提及的實施例所限制。但是,這些實施例被提供以幫助更完整的理解本揭露之內容並且向本領域之技術人員充分傳達本揭露的範圍。The following disclosure will be more fully described herein through drawings and references, and some exemplary embodiments are illustrated in the drawings. The disclosure may be implemented in different forms and should not be limited by the embodiments mentioned below. However, these embodiments are provided to help a more complete understanding of the content of the disclosure and to fully convey the scope of the disclosure to those skilled in the art.
在圖式中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的參考標號會貫穿全文指代相似元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。In the drawings, the thickness of layers, films, panels, regions, etc., is exaggerated for clarity. Throughout the specification, the same reference numerals will refer to similar elements throughout the text. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to another element, or intermediate elements may also exist. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intermediate elements.
應當理解,儘管術語「第一」、「第二」、「第三」等在本揭露中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的「第一元件」、「部件」、「區域」、「層」或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本揭露的教導。It should be understood that although the terms "first", "second", "third", etc. may be used to describe various elements, components, regions, layers and/or parts in this disclosure, these elements, components, regions, and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the "first element", "component", "region", "layer" or "part" discussed below can be referred to as a second element, component, region, layer or part without departing from the teachings of this disclosure.
這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本揭露所使用的,除非內容清楚地指示,否則單數形式「一」、「一個」和「該」旨在包括複數形式,包括「至少一個」。「或」表示「及/或」。如本揭露所使用的,術語「及/或」包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語「包括」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terms used herein are for the purpose of describing specific embodiments only and are not restrictive. As used in this disclosure, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one". "Or" means "and/or". As used in this disclosure, the term "and/or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "include" and/or "include" specify the presence and/or parts of the features, regions, wholes, steps, operations, elements, components and/or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components and/or combinations thereof.
本揭露使用的「約」、「近似」、或「實質上」包括所述值和在本領域之技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本揭露使用的「約」、「近似」或「實質上」可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。The term "about", "approximately", or "substantially" as used herein includes the stated value and an average value within an acceptable deviation range of a particular value determined by a person skilled in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the term "about", "approximately", or "substantially" as used herein can select a more acceptable deviation range or standard deviation depending on the optical properties, etching properties, or other properties, and can be applied to all properties without using one standard deviation.
除非另有定義,本揭露使用的所有術語(包括技術和科學術語)具有與本領域之技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本揭露的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本揭露中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used in this disclosure have the same meaning as commonly understood by those skilled in the art. It will be further understood that those terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this disclosure, and will not be interpreted as an idealized or overly formal meaning unless expressly defined in this disclosure.
傳統的液晶顯示面板係由薄膜電晶體(thin film transistor, TFT)基板、彩色濾光(color filter, CF)基板、液晶層以及框膠組成。液晶層透過框膠夾置於薄膜電晶體基板與彩色濾光基板之間。Traditional LCD panels are composed of a thin film transistor (TFT) substrate, a color filter (CF) substrate, a liquid crystal layer, and a frame adhesive. The liquid crystal layer is sandwiched between the TFT substrate and the color filter substrate through the frame adhesive.
其中,彩色濾光片基板至少包括導電層、多個彩色濾光單元、多個遮光層(black matrix, BM)以及多個間隔物(photo spacer, PS)。間隔物係用以固定薄膜電晶體基板與彩色濾光基板之間的間距(cell gap)。The color filter substrate at least includes a conductive layer, a plurality of color filter units, a plurality of black matrix (BM) and a plurality of photo spacers (PS). The spacers are used to fix the distance (cell gap) between the thin film transistor substrate and the color filter substrate.
然而,在各個膜層的製程中可能發生異物附著或光阻殘留等缺陷,導致後續製程發生膜層剝落(peeling)或顯示異常等問題,造成良率下降。However, defects such as foreign matter adhesion or photoresist residue may occur during the manufacturing process of each film layer, causing problems such as film peeling or display abnormalities in subsequent processes, resulting in a decrease in yield.
因此,為了避免上述問題發生,必須針對此種表面具有不良缺陷的彩色濾光基板進行重工(rework),以去除玻璃基板上的不良缺陷,例如去除彩色濾光單元、導電層、遮光層、間隔物、異物或殘留光阻等,接著重新投入產線或轉為控片(dummy glass)供其他製程階段使用。Therefore, in order to avoid the above problems, the color filter substrate with surface defects must be reworked to remove the defects on the glass substrate, such as removing the color filter unit, conductive layer, light shielding layer, spacers, foreign matter or residual photoresist, and then put back into the production line or converted into a dummy glass for use in other process stages.
目前常見用以移除彩色濾光單元、導電層、遮光層、間隔物、異物或殘留光阻等沉積層或材料的方法為使用包括特殊配方的藥劑噴淋(spray),使沉積層以碎屑的形式從彩色濾光基板上剝離。在這個製程中,噴淋出的藥劑會經由管路循環使用。Currently, the common method for removing deposited layers or materials such as color filter units, conductive layers, light shielding layers, spacers, foreign matter or residual photoresist is to use a specially formulated agent to spray, so that the deposited layer is peeled off from the color filter substrate in the form of debris. In this process, the sprayed agent is circulated through a pipeline.
然而,沉積層碎屑通常會在製程的特定步驟中與藥劑一同回收,因此在藥劑重新進入管路循環前,會進行過濾的步驟。而由於濾心的髒汙程度隨著使用時間提升,通過濾心重新進入管路的藥劑流量逐漸降低。在這種情況下,需要定期停機以更換用以過濾的濾心。However, the sedimentation debris is usually recovered together with the reagents in a specific step of the process, so a filtering step is performed before the reagents re-enter the pipeline. As the degree of contamination of the filter element increases with the use time, the flow rate of the reagent re-entering the pipeline through the filter element gradually decreases. In this case, it is necessary to shut down the machine regularly to replace the filter element used for filtration.
此外,以碎屑的形式隨著藥劑流動的沉積層使得藥劑的濃稠度升高,流動性降低,進而影響藥劑噴淋並剝離沉積層的效果,因此也需要定期停機以排出部分濃稠度過高的藥劑,並加入新的藥劑,以降低濃稠度、提高流動性。In addition, the deposited layer that flows with the agent in the form of debris increases the concentration of the agent and reduces the fluidity, which in turn affects the effect of spraying the agent and peeling off the deposited layer. Therefore, it is also necessary to shut down the machine regularly to discharge some of the agents with excessively high concentrations and add new agents to reduce the concentration and improve the fluidity.
因此,本揭露旨在於提出一種可以延長濾心使用壽命的沉積層移除方法。Therefore, the present disclosure aims to provide a deposit layer removal method that can extend the service life of the filter.
儘管在後續段落中,本揭露提出的沉積層移除方法以移除彩色濾光基板上的沉積層為實施例,應當理解,本揭露的沉積層移除方法可以應用在各種從基板上移除沉積層的製程中,而不脫離本揭露的範圍。Although in the following paragraphs, the deposition layer removal method proposed in the present disclosure is exemplified by removing the deposition layer on the color filter substrate, it should be understood that the deposition layer removal method of the present disclosure can be applied to various processes for removing the deposition layer from the substrate without departing from the scope of the present disclosure.
請參照第1圖,其為根據本揭露的一些實施方式的彩色濾光基板100的示意圖。如第1圖中所示,彩色濾光基板100包括玻璃基板101、遮光層102、彩色光阻層103(color resist)、透明導電層104以及間隔物層105。Please refer to FIG. 1 , which is a schematic diagram of a
如第1圖中所示,遮光層102覆蓋玻璃基板101。在一些實施方式中,遮光層102包括金屬薄膜或黑色光阻薄膜。如第1圖中所示,彩色光阻層103設置於遮光層102上方。彩色光阻層103包括第一彩色濾光單元103a、第二彩色濾光單元103b以及第三彩色濾光單元103c。舉例來說,第一彩色濾光單元103a為紅色光阻,第二彩色濾光單元103b為綠色光阻,第三彩色濾光單元103c為藍色光阻。As shown in FIG. 1 , the
如第1圖中所示,透明導電層104覆蓋彩色光阻層103。在一些實施方式中,透明導電層104包括氧化銦錫(indium tin oxide, ITO)或氧化銦鋅(indium zinc oxide, IZO)。如第1圖中所示,間隔物層105設置於透明導電層104上方。在一些實施方式中,間隔物層105包括壓克力樹脂如聚醯亞胺(polyimide, PI)。As shown in FIG. 1 , a transparent
基於第1圖中的彩色濾光基板100的結構,在移除彩色濾光基板100上的沉積層的過程中,依序移除間隔物層105、移除透明導電層104,再移除彩色光阻層103與遮光層102。Based on the structure of the
根據不同的沉積層使用的藥劑成分不同。舉例來說,在一些實施方式中,使用氫氧化鉀(potassium hydroxide, KOH)移除間隔物層105、彩色光阻層103以及遮光層102,其中遮光層102包括黑色光阻薄膜。在一些實施方式中,使用硫化鎵(gallium sulfide, Ga2S3)移除透明導電層104。The chemical composition used varies according to different deposition layers. For example, in some embodiments, potassium hydroxide (KOH) is used to remove the
在這些實施方式中,彩色濾光基板100先進入第一個製程腔室中以移除間隔物層105,接著進行水洗,然後進入第二個製程腔室中移除透明導電層104,接著進行水洗,最後在第三個製程腔室中移除彩色光阻層103與遮光層102,接著水洗後檢查所形成的玻璃基板101係適於重新投入產線或轉為控片使用。In these embodiments, the
請參照第2圖,其為根據本揭露的一些實施方式的用於移除沉積層的機台200的示意圖。在一些實施方式中,機台200為一再生去光阻機(color filter recycle stripper)。Please refer to FIG. 2, which is a schematic diagram of a
如第2圖中所示,機台200包括噴淋系統。噴淋系統包括腔室201。腔室201包括噴淋頭202、入口203a以及出口203b。腔室201自循環管路213獲取第一藥劑L1,並藉由噴淋頭202噴灑第一藥劑L1在彩色濾光基板100上。在一些實施方式中,第一藥劑L1高壓噴淋於彩色濾光基板100上。在一些實施方式中,第一藥劑L1處於高溫狀態。舉例來說,第一藥劑L1自噴淋頭202噴灑出時,第一藥劑L1的溫度在65°C與75°C之間。As shown in FIG. 2 , the
通過使用特定成分的藥劑,在壓力、溫度以及接觸時間合宜的情況下,沉積層會發生膨潤現象(swelling phenomenon)並逐漸自彩色濾光基板100剝離,形成沉積層碎屑。在一些實施方式中,腔室201還包括例如毛刷等工具(未示出),配置以在噴灑第一藥劑L1的期間,對彩色濾光基板100執行機械摩擦製程,將沉積層碎屑自彩色濾光基板100上刮除。By using a reagent with a specific composition, under the condition of appropriate pressure, temperature and contact time, the deposited layer will undergo a swelling phenomenon and gradually peel off from the
在一些實施方式中,腔室201還包括傳送裝置204。傳送裝置204配置以在噴灑第一藥劑L1的期間,將彩色濾光基板100自腔室201的入口203a傳送至出口203b。In some embodiments, the
如第2圖中所示,在一些實施方式中,噴灑出的第一藥劑L1通過彩色濾光基板100與傳送裝置204流至腔室201的底部,與自彩色濾光基板100剝離的沉積層碎屑混合形成第一藥劑L2。接著,第一藥劑L2通過藥劑回收管路205回收至暫存槽207。As shown in FIG. 2 , in some embodiments, the sprayed first agent L1 flows to the bottom of the
在一些實施方式中,廠務系統206可以藉由暫存槽207的注入口207a將第二藥劑L3加入至暫存槽207中,使第二藥劑L3與第一藥劑L2混合,以調整暫存槽207中藥劑的濃度與成分,並形成第一藥劑L4。在一些實施方式中,第二藥劑L3與第一藥劑L2包括相同成分。在一些實施方式中,第二藥劑L3實質上不包括沉積層碎屑。In some embodiments, the
接著,如第2圖中所示,在一些實施方式中,變頻泵209驅使帶有沉積層碎屑的第一藥劑L4流經濾心208。濾心208吸附沉積層碎屑,使得第一藥劑L4中沉積層碎屑佔的比例降低,形成第一藥劑L5。Next, as shown in FIG. 2 , in some embodiments, the
在一些實施方式中,變頻泵209設置以提高、維持或降低第一藥劑L5的流量,並形成第一藥劑L6,再次進入循環管路213。換言之,第一時點的第一藥劑L1經過腔室201、暫存槽207、濾心208以及變頻泵209之後,所形成的第一藥劑L6在進入循環管路213後形成第二時點的第一藥劑L1。In some embodiments, the
應當理解,第一時點的第一藥劑L1的成分、流量等性質與第二時點的第一藥劑L1的成分、流量等性質可能不同。舉例來說,在濾心髒汙程度相當高但尚未替換時,第一時點的第一藥劑L1中沉積層碎屑佔有的比例小於第二時點的第一藥劑L1中沉積層碎屑佔有的比例。It should be understood that the composition, flow rate and other properties of the first agent L1 at the first time point may be different from the composition, flow rate and other properties of the first agent L1 at the second time point. For example, when the filter is highly contaminated but has not been replaced, the proportion of debris in the sediment layer in the first agent L1 at the first time point is less than the proportion of debris in the sediment layer in the first agent L1 at the second time point.
在一些實施方式中,暫存槽207具有感測器217。感測器217配置以感測第一藥劑L4在暫存槽207中的深度。In some embodiments, the
在一些實施方式中,在暫存槽207中的一部分第一藥劑L4可以作為第一藥劑L7藉由排放系統215排出。進一步來說,可以藉由控制閥214控制第一藥劑L7的量。在一些實施方式中,控制閥214與廠務系統206通訊連接。In some embodiments, a portion of the first agent L4 in the
如第2圖中所示,濾心208設置有流量計210。藉由流量計210可以測得第一藥劑L5的流量。流量計210與可程式化邏輯控制器211(programmable logic controller, PLC)通訊連接。流量計210將流量值傳送至可程式化邏輯控制器211。根據預設的流量閾值,可程式化邏輯控制器211控制變頻泵209的變頻器212(inverter),以調整變頻泵209的運轉頻率,進而提高、維持或降低第一藥劑L5的流量至一預設範圍內。在本文中,流量計210、可程式化邏輯控制器211以及變頻器212合稱為流量控制系統。在一些實施方式中,流量控制系統與廠務系統206通訊連接。在一些實施方式中,廠務系統206包括流量控制系統。As shown in FIG. 2 , the
請參照第2圖與第3圖。第3圖為根據本揭露的一些實施方式的操作機台200的方法300的時序圖。如第3圖中所示,方法300從循環管路執行步驟S302開始。在步驟S302中,循環管路提供第一藥劑。舉例來說,在一些實施方式中,循環管路213提供第一藥劑L1。Please refer to FIG. 2 and FIG. 3. FIG. 3 is a timing diagram of a
接著,在步驟S304中,噴淋系統噴灑第一藥劑於基板上,使沉積層碎屑自基板剝離。舉例來說,如上所述,噴淋系統通過噴淋頭202將第一藥劑L1噴灑在彩色濾光基板100上,使得彩色濾光基板100上的沉積層發生膨潤現象,並以碎屑的形式自彩色濾光基板100剝落。Next, in step S304, the spray system sprays the first reagent on the substrate to remove the deposited layer debris from the substrate. For example, as described above, the spray system sprays the first reagent L1 on the
在一些實施方式中,在步驟S304中,噴淋系統包括傳送裝置204,配置以將彩色濾光基板100自噴淋系統的腔室201的入口203a傳送至出口203b。在一些實施方式中,噴淋系統還包括例如毛刷等工具,在步驟S304中藥劑噴淋的同時,藉由物理方式刮除彩色濾光基板100上的沉積層碎屑。在一些實施方式中,彩色濾光基板100在腔室201中停留的時間為300秒。In some embodiments, in step S304, the spray system includes a conveying
如第3圖中所示,噴淋系統接著執行步驟S306。在步驟S306中,噴淋系統排放第一藥劑與沉積層碎屑。舉例來說,在一些實施方式中,沉積層碎屑與第一藥劑L1在噴淋系統的腔室201底部匯合形成第一藥劑L2,並自藥劑回收管路205排放。As shown in FIG. 3 , the spray system then performs step S306 . In step S306 , the spray system discharges the first agent and the deposited layer debris. For example, in some embodiments, the deposited layer debris and the first agent L1 merge at the bottom of the
接下來,暫存槽執行步驟S308,接收第一藥劑與沉積層碎屑。在這個實施方式中,假定在步驟S308執行當下,流經濾心208的藥劑流量值大於第一閾值,則流量控制系統暫不排放暫存槽207內的沉積層碎屑與第一藥劑L4,且廠務系統206暫不加入第二藥劑L3至暫存槽207中。如此一來,暫存槽207僅自藥劑回收管路205接收第一藥劑L2。Next, the temporary storage tank executes step S308 to receive the first reagent and the sedimentation layer debris. In this embodiment, assuming that when step S308 is executed, the reagent flow value flowing through the
相對地,假定在步驟S308執行當下,流經濾心208的藥劑流量值在第一閾值與第二閾值之間,則流量控制系統排放暫存槽207內的一部分沉積層碎屑與第一藥劑L4,且廠務系統206加入第二藥劑L3至暫存槽207中。如此一來,暫存槽207自藥劑回收管路205接收第一藥劑L2,並自注入口207a接收第二藥劑L3。In contrast, assuming that when step S308 is executed, the reagent flow value flowing through the
接著,在步驟S310中,循環管路接收第一藥劑與沉積層碎屑。舉例來說,在一些實施方式中,暫存槽207中的第一藥劑L4由循環管路216接收。Next, in step S310 , the circulation pipeline receives the first agent and the sediment layer debris. For example, in some embodiments, the first agent L4 in the
方法300接著執行步驟S312。在步驟S312中,流量控制系統驅使第一藥劑與沉積層碎屑流經濾心,使濾心吸附沉積層碎屑。舉例來說,在一些實施方式中,流量控制系統藉由變頻泵209驅使第一藥劑L4流經濾心208,使濾心208吸附沉積層碎屑,並形成濃稠度較低的第一藥劑L5。The
在執行步驟S312的同時,流量控制系統執行步驟S314,獲取通過濾心的第一藥劑的流量值。舉例來說,在一些實施方式中,流量控制系統藉由流量計210獲取通過濾心208的第一藥劑L5的流量值,並且流量計210將第一藥劑L5的流量值傳送至可程式化邏輯控制器211。While executing step S312, the flow control system executes step S314 to obtain the flow value of the first drug passing through the filter. For example, in some embodiments, the flow control system obtains the flow value of the first drug L5 passing through the
接著,流量控制系統執行步驟S316,判斷流量值是否小於第二閾值,若是,則由廠務系統執行步驟S318,停止機台運作,並替換濾心。若否,則流量控制系統接著執行步驟S320,確認流量值是否大於第一閾值。Next, the flow control system executes step S316 to determine whether the flow value is less than the second threshold. If so, the factory system executes step S318 to stop the machine operation and replace the filter. If not, the flow control system then executes step S320 to confirm whether the flow value is greater than the first threshold.
舉例來說,在步驟S316中,可程式化邏輯控制器211接收到流量計210傳送的流量值後,判斷流量值是否小於第二閾值。在一些實施方式中,第二閾值為50 L/min。在步驟S316中,若確認第一藥劑L5的流量值小於50 L/min,則可程式化邏輯控制器211傳送訊息至廠務系統206,要求停止機台200運作,並替換濾心208。For example, in step S316, after receiving the flow value transmitted by the
在步驟S316的一些實施方式中,在替換濾心208的同時,將暫存槽207中的第一藥劑L4替換為第二藥劑L3,其中第二藥劑L3中沉積層碎屑佔有的比例小於第一藥劑L4中沉積層碎屑佔有的比例。In some implementations of step S316, while replacing the
在步驟S316的一些實施方式中,可程式化邏輯控制器211在確認流量值小於第二閾值時,發出警示訊號。舉例來說,可程式化邏輯控制器211透過警報器與訊息提醒操作人員採取措施。In some implementations of step S316, the
在步驟S316中,若確認第一藥劑L5的流量值大於50 L/min,則流量控制系統接著執行步驟S320,判斷流量值是否大於第一閾值。若流量控制系統判斷流量值大於第一閾值,則依序執行步驟S322與步驟S324。在步驟S322中,流量控制系統中的變頻泵的運轉頻率維持不變。在步驟S324中,循環管路接收通過濾心的第一藥劑。In step S316, if it is confirmed that the flow value of the first agent L5 is greater than 50 L/min, the flow control system then executes step S320 to determine whether the flow value is greater than the first threshold value. If the flow control system determines that the flow value is greater than the first threshold value, steps S322 and S324 are executed in sequence. In step S322, the operating frequency of the variable frequency pump in the flow control system remains unchanged. In step S324, the circulation pipeline receives the first agent passing through the filter.
舉例來說,在一些實施方式中,第一閾值為80 L/min。在步驟S320中,若可程式化邏輯控制器211確認第一藥劑L5的流量值大於80 L/min,則代表第一藥劑L4中所佔的沉積層碎屑比例相對低,因此通過濾心208的第一藥劑L5的流量還在第一閾值以上,故可以執行步驟S322,變頻泵209的運轉頻率維持不變,而第一藥劑L5經過變頻泵209後形成實質上性質相同的第一藥劑L6,在步驟S324中進入循環管路213,重新由噴淋系統利用。For example, in some embodiments, the first threshold is 80 L/min. In step S320, if the
在步驟S320中,若流量控制系統判斷流量值小於第一閾值,則同時執行步驟S326至步驟S332。在步驟S326中,流量控制系統中的變頻泵的運轉頻率提高,使得通過濾心的第一藥劑的流量值上升,接著在步驟S328中,循環管路接收流量上升的第一藥劑。同時,在步驟S330中,廠務系統提供第二藥劑至暫存槽,接著在步驟S332中,暫存槽排放其中的一部分沉積層碎屑與第一藥劑,並接收第二藥劑。In step S320, if the flow control system determines that the flow value is less than the first threshold value, then steps S326 to S332 are executed simultaneously. In step S326, the operating frequency of the variable frequency pump in the flow control system is increased, so that the flow value of the first reagent passing through the filter core increases, and then in step S328, the circulation pipeline receives the first reagent with an increased flow rate. At the same time, in step S330, the factory system provides the second reagent to the temporary storage tank, and then in step S332, the temporary storage tank discharges a portion of the sediment layer debris and the first reagent, and receives the second reagent.
舉例來說,在一些實施方式中,第一閾值為80 L/min,在步驟S320中,若可程式化邏輯控制器211確認第一藥劑L5的流量值在50 L/min與80 L/min之間,則代表第一藥劑L4中所佔的沉積層碎屑比例相對高,使得通過濾心208的第一藥劑L5的流量降低,但此時流量降低的程度尚可以透過在步驟S326中變頻泵209的運轉頻率提高,使第一藥劑L5的流量值上升,形成第一藥劑L6,並在步驟S328中藉由循環管路213重新進入噴淋系統利用,以維持所噴淋的藥劑流量固定。舉例來說,變頻泵209的運轉頻率可以自40Hz提升至60Hz。For example, in some embodiments, the first threshold is 80 L/min. In step S320, if the
應當理解,由於第一藥劑L6中可能包括濾心208無法濾出的沉積層碎屑,因此第一藥劑L6與第一時點的第一藥劑L1的成分與濃稠度可能不同,即第二時點的第一藥劑L1的性質與第一時點的第一藥劑L1的性質可能不同。It should be understood that since the first agent L6 may include sediment debris that the
在一些實施方式中,在步驟S326與步驟S328執行的同時,廠務系統206執行步驟S330,提供第二藥劑L3至暫存槽207中,接著暫存槽207執行步驟S332,透過例如排放系統215將其中的一部分第一藥劑L4作為第一藥劑L7排出,並接收第二藥劑L3。In some embodiments, while step S326 and step S328 are being executed, the
在一些實施方式中,暫存槽207包括多個感測器217。感測器217與廠務系統206通訊連接。感測器217配置以感測第一藥劑L4在暫存槽207中的深度,並傳送感測訊號至廠務系統206,以控制加入的第二藥劑L3的量。In some embodiments, the
在一些實施方式中,暫存槽207在步驟S332中排出的第一藥劑L7佔暫存槽207中的第一藥劑L4的總量的14.55%與15.45%之間。In some embodiments, the first agent L7 discharged from the
在一些實施方式中,可程式化邏輯控制器211進一步配置以在暫存槽207執行完步驟S332後,變頻泵209的運轉頻率降低。In some implementations, the
在一些實施方式中,方法300還包含在步驟S304之後,使彩色濾光基板100進入另一製程,以移除彩色濾光基板100上的其他沉積層或重新沉積另一沉積層。In some implementations, the
請參照第4圖,其為根據本揭露的一些實施方式的濾心髒汙程度與使用時間的關係示意圖。如第4圖中所示,雙點長畫線代表一般情況下濾心髒汙程度隨時間變化的趨勢。假定達到髒汙程度Vmax時(約等於流量降低至第二閾值的時間)需停機替換濾心208,此時的時間T視為濾心使用壽命。Please refer to FIG. 4, which is a schematic diagram of the relationship between the contamination level of the filter and the use time according to some embodiments of the present disclosure. As shown in FIG. 4, the double-point long dashed line represents the trend of the contamination level of the filter over time under normal circumstances. Assuming that the
然而,如第4圖中的雙點長畫線所示,在這段時間T中,濾心208的過濾效果在濾心208為全新至濾心208達到髒汙程度V1之間時為最佳,當濾心208的髒汙程度超過髒汙程度V1之後,髒汙的累積速度會迅速升高,使得通過濾心208的藥劑流量驟減。However, as shown by the double-dot long dashed line in FIG. 4 , during this period of time T, the filtering effect of the
因此在本揭露的一些實施方式中,可以設定濾心208達到髒汙程度V1時的流量為第一閾值,使得濾心208在達到髒汙程度V1時,流量控制系統即開始進行流量調控,同時從暫存槽207排出部分藥劑並加入未含有沉積層碎屑的新藥劑,以降低暫存槽207中的藥劑中沉積層碎屑所佔的比例。在理想情況下,由於藥劑中沉積層碎屑所佔的比例降低,可以減緩濾心髒汙程度增加的速度,使得趨勢如第4圖中的細實線所示,進而將濾心使用壽命增加至例如時間2.8T。然而,在一些實施方式中,可能由於沉積層碎屑附著在暫存槽207、循環管路216或循環管路213的壁上,以至於沉積層碎屑仍在流道中累積,因此濾心使用壽命僅增加至例如時間1.4T。Therefore, in some embodiments of the present disclosure, the flow rate when the
以上對於本揭露之具體實施方式之詳述,可以明顯地看出,於本揭露的一些實施方式的沉積層移除方法中,藉由監控變頻泵的運轉頻率並檢測藥劑流量的變化,在藥劑中含有的沉積層碎屑佔比過高時,適時排出部分混合有沉積層碎屑的藥劑,並加入未含有沉積層碎屑的新藥劑,可以確保進入噴淋系統的藥劑流量維持實質上固定。相對於常見的沉積層移除方法,可以使噴淋系統的效率不會隨濾心髒汙程度增加而明顯地惡化,並可以達到延長濾心使用壽命的效果,減少因替換濾心導致的停機時間。From the above detailed description of the specific implementation methods of the present disclosure, it can be clearly seen that in the deposit layer removal method of some implementation methods of the present disclosure, by monitoring the operating frequency of the variable frequency pump and detecting the change of the agent flow rate, when the proportion of the deposit layer debris contained in the agent is too high, part of the agent mixed with the deposit layer debris is discharged in time, and new agent without the deposit layer debris is added, so as to ensure that the agent flow rate entering the spray system remains substantially fixed. Compared with the common deposit removal method, the efficiency of the spray system will not deteriorate significantly as the degree of filter contamination increases, and it can extend the service life of the filter and reduce the downtime caused by filter replacement.
前面描述內容僅對於本揭露之示例性實施例給予說明和描述,並無意窮舉或限制本揭露所公開之發明的精確形式。以上教示可以被修改或者進行變化。The foregoing description is only provided to illustrate and describe the exemplary embodiments of the present disclosure, and is not intended to limit the precise form of the invention disclosed by the present disclosure. The above teachings may be modified or varied.
被選擇並說明的實施例是用以解釋本揭露之內容以及他們的實際應用從而激發本領域之技術人員利用本揭露及各種實施例,並且進行各種修改以符合預期的特定用途。在不脫離本揭露之精神和範圍的前提下,替代性實施例將對於本領域之技術人員來說為顯而易見者。因此,本揭露的範圍是根據所附發明申請專利範圍而定,而不是被前述說明書和其中所描述之示例性實施例所限定。The embodiments selected and described are used to explain the content of the present disclosure and their practical applications to inspire those skilled in the art to utilize the present disclosure and various embodiments and make various modifications to meet the specific intended use. Alternative embodiments will be obvious to those skilled in the art without departing from the spirit and scope of the present disclosure. Therefore, the scope of the present disclosure is determined according to the scope of the attached invention application, rather than being limited by the above specification and the exemplary embodiments described therein.
100:彩色濾光基板
101:玻璃基板
102:遮光層
103:彩色光阻層
103a:第一彩色濾光單元
103b:第二彩色濾光單元
103c:第三彩色濾光單元
104:透明導電層
105:間隔物層
200:機台
201:腔室
202:噴淋頭
203a:入口
203b:出口
204:傳送裝置
205:藥劑回收管路
206:廠務系統
207:暫存槽
207a:注入口
208:濾心
209:變頻泵
210:流量計
211:可程式化邏輯控制器
212:變頻器
213,216:循環管路
214:控制閥
215:排放系統
217:感測器
300:方法
L1,L2,L4,L5,L6,L7:第一藥劑
L3:第二藥劑
S302,S304,S306,S308,S310,S312,S314,S316,S318,S320,S322,S324,S326,S328,S330,S332:步驟
V1,Vmax:髒汙程度
100: Color filter substrate
101: Glass substrate
102: Shading layer
103:
圖式繪示了本揭露的一個或多個實施例,並且與書面描述一起用於解釋本揭露之原理。在所有圖式中,儘可能使用相同的圖式標記指代實施例的相似或相同元件,其中: 第1圖為根據本揭露的一些實施方式的彩色濾光基板的示意圖。 第2圖為根據本揭露的一些實施方式的用於移除沉積層的機台的示意圖。 第3圖為根據本揭露的一些實施方式的操作機台的方法的時序圖。 第4圖為根據本揭露的一些實施方式的濾心髒汙程度與使用時間的關係示意圖。 The drawings illustrate one or more embodiments of the present disclosure and are used together with the written description to explain the principles of the present disclosure. In all drawings, the same figure labels are used to refer to similar or identical elements of the embodiments as much as possible, wherein: FIG. 1 is a schematic diagram of a color filter substrate according to some embodiments of the present disclosure. FIG. 2 is a schematic diagram of a machine for removing a deposited layer according to some embodiments of the present disclosure. FIG. 3 is a timing diagram of a method for operating a machine according to some embodiments of the present disclosure. FIG. 4 is a schematic diagram of the relationship between the degree of contamination of the filter core and the use time according to some embodiments of the present disclosure.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None
300:方法 300:Methods
S302,S304,S306,S308,S310,S312,S314,S316,S318,S320,S322,S324,S326,S328,S330,S332:步驟 S302, S304, S306, S308, S310, S312, S314, S316, S318, S320, S322, S324, S326, S328, S330, S332: Steps
Claims (10)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200811932A (en) * | 2006-08-31 | 2008-03-01 | Phoenix Prec Technology Corp | Resist stripping device and method of resist stripping |
| TW202020954A (en) * | 2018-11-16 | 2020-06-01 | 日商迪思科股份有限公司 | Laminate processing method |
| TW202305991A (en) * | 2021-06-30 | 2023-02-01 | 日商東京威力科創股份有限公司 | Substrate processing device and substrate processing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200811932A (en) * | 2006-08-31 | 2008-03-01 | Phoenix Prec Technology Corp | Resist stripping device and method of resist stripping |
| TW202020954A (en) * | 2018-11-16 | 2020-06-01 | 日商迪思科股份有限公司 | Laminate processing method |
| TW202305991A (en) * | 2021-06-30 | 2023-02-01 | 日商東京威力科創股份有限公司 | Substrate processing device and substrate processing method |
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