TWI863361B - Micro strain displacement measurement device and measurement method - Google Patents
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Abstract
本創作為一種微應變位移量測裝置及量測方法,該裝置包含一光源、一應變感測模組及一光信號處理模組,其中該應變感測模組係供貼附在一待測件表面,該應變感測模組包含一撓性柱狀陣列與一液晶層,該撓性柱狀陣列包含複數個緊密排列之微柱體,相鄰微柱體之間形成縫隙空間,該液晶層填充在該些縫隙空間內部,該撓性柱狀陣列可因應該待測件的應變量而連動形變,使其內部之液晶分子的傾角隨之改變;當已進行第一次偏極化處理之量測光束進入該液晶層並受到液晶分子改變其偏振狀態後,光信號處理模組即根據從該應變感測模組離開並經過第二次偏極化處理之二次偏極光束,計算出該待測件之應變量。The invention is a micro-strain displacement measurement device and measurement method. The device includes a light source, a strain sensing module and an optical signal processing module. The strain sensing module is attached to a surface of a test object. The strain sensing module includes a flexible columnar array and a liquid crystal layer. The flexible columnar array includes a plurality of closely arranged micro-columns. The gaps are formed between adjacent micro-columns. The liquid crystal layer fills these gaps. Inside the space, the flexible columnar array can be deformed in conjunction with the strain of the device under test, causing the tilt angle of the liquid crystal molecules inside to change accordingly; when the measuring light beam that has undergone the first polarization treatment enters the liquid crystal layer and is changed in its polarization state by the liquid crystal molecules, the optical signal processing module calculates the strain of the device under test based on the second polarization light beam that leaves the strain sensing module and undergoes the second polarization treatment.
Description
本發明關於一種應變的量測技術,尤指一種應用光學原理測量應變之裝置及方法。The present invention relates to a strain measurement technology, and more particularly to a device and method for measuring strain using optical principles.
應變規(Strain gauge)或稱應變計是一種量測應變量的感測元件,如圖6所示,常見的應變規是由連續彎折的平面金屬(合金)線100製作而成,該金屬線100係附著在一承載膜片110上,於金屬線100的相對兩端各連接有一信號導線120。在實際應用時,將應變規黏在一待測件的表面,當待測件產生應變而伸長或縮短時,該應變規上的金屬線100隨之產生微幅形變,該金屬線100的電阻值也會因此而改變。A strain gauge is a sensing element for measuring strain. As shown in FIG6 , a common strain gauge is made of a continuously bent planar metal (alloy)
應變規利用金屬形變時會改變本身阻值的原理,測量該待測件的應變量。為了獲得該金屬線100的電阻值變化量,在該金屬線100兩端的信號導線120必須電性連接至一外部信號轉換裝置,該外部信號轉換裝置根據金屬線100的電阻值變化,運算得知該待測件的應變量。The strain gauge measures the strain of the object under test by using the principle that metal changes its resistance when it is deformed. In order to obtain the change in resistance of the
現有應變規為了要得到金屬線100的電阻值變化量,需要將該應變規電性連接至外部計算裝置,一般是透過實體導線電性連接。但在某些應用領域,例如待測件本身會產生旋轉運動,該應變規的信號導線120會面臨線路纏繞問題,為克服纏繞問題需要增加無線信號傳輸線路才能適用在旋轉運動的待測件。In order to obtain the resistance change of the
有鑑於現有量測應變的感測件需要利用導線額外電性連接,本發明的主要目的是提供一種「微應變位移量測裝置及量測方法」,在不需要電性連接感測元件與非接觸的情形下,量測待測件之表面形變量。In view of the fact that existing strain measuring sensors require additional electrical connections using wires, the main purpose of the present invention is to provide a "micro-strain displacement measurement device and measurement method" that can measure the surface deformation of a test piece without the need for electrical connection of the sensing element and the non-contact state.
為達成前述目的,本創作之微應變位移量測裝置包含:To achieve the above-mentioned purpose, the micro-strain displacement measurement device of this invention includes:
一光源,用於提供一光源光束;A light source, used to provide a light beam;
至少一線性偏振片,係設置在該光源光束的傳輸路徑上,對該光源光束進行第一次偏極化處理,以提供具有固定強度的一量測光束;At least one linear polarizer is disposed on the transmission path of the light source beam to perform a first polarization process on the light source beam to provide a measurement beam with a fixed intensity;
一應變感測模組,供設置在一待測件的表面,該應變感測模組配置在該量測光束的傳輸路徑上,令該量測光束可入射至該應變感測模組,該應變感測模組包含: 一撓性柱狀陣列,包含複數個緊密排列之微柱體,相鄰微柱體之間形成縫隙空間,該撓性柱狀陣列係對應該待測件的應變量而產生形變; 一液晶層,填充於該撓性柱狀陣列的該縫隙空間中; A strain sensing module is provided on the surface of a test object. The strain sensing module is arranged on the transmission path of the measuring beam so that the measuring beam can be incident on the strain sensing module. The strain sensing module comprises: A flexible columnar array, comprising a plurality of closely arranged microcolumns, with gap spaces formed between adjacent microcolumns. The flexible columnar array is deformed in accordance with the strain of the test object; A liquid crystal layer is filled in the gap space of the flexible columnar array;
一光信號處理模組,係接收從該應變感測模組離開之一調變光束,該調變光束為該量測光束進入至該液晶層之後再出射之光束,該調變光束再經該至少一線性偏振片進行第二次偏極化處理後成為一二次偏極光束,該光信號處理模組根據該二次偏極光束的光強度值計算出該待測件之應變量。An optical signal processing module receives a modulated light beam leaving the strain sensing module. The modulated light beam is the light beam emitted after the measuring light beam enters the liquid crystal layer. The modulated light beam is then polarized for the second time by the at least one linear polarizer to become a secondary polarized light beam. The optical signal processing module calculates the strain of the device to be tested based on the light intensity value of the secondary polarized light beam.
本創作之微應變位移量測方法包含:The micro-strain displacement measurement method of this invention includes:
在一待測件的表面貼附一應變感測模組,其中,該應變感測模組包含有一撓性柱狀陣列及一液晶層,該撓性柱狀陣列具有複數個緊密排列之微柱體,相鄰微柱體之間形成縫隙空間,該液晶層填充於該縫隙空間中,該撓性柱狀陣列係對應該待測件的應變量而產生形變;A strain sensing module is attached to the surface of a test object, wherein the strain sensing module includes a flexible columnar array and a liquid crystal layer, the flexible columnar array has a plurality of closely arranged micro-columns, gap spaces are formed between adjacent micro-columns, the liquid crystal layer is filled in the gap spaces, and the flexible columnar array is deformed in accordance with the strain of the test object;
提供具有固定強度的一線性偏極化的量測光束,令該量測光束入射至該應變感測模組,其中該量測光束係經由第一次偏極化處理而得到;Providing a linearly polarized measuring beam with a fixed intensity, and allowing the measuring beam to be incident on the strain sensing module, wherein the measuring beam is obtained through a first polarization process;
接收從該應變感測模組離開之一調變光束,該調變光束為該量測光束進入至該液晶層之後再出射的光束,該調變光束再進行與該第一次偏極化相同方向之第二次偏極化處理以成為一二次偏極光束;Receiving a modulated light beam leaving the strain sensing module, the modulated light beam being the light beam emitted after the measuring light beam enters the liquid crystal layer, and the modulated light beam undergoes a second polarization process in the same direction as the first polarization process to become a second polarized light beam;
根據該二次偏極光束的光強度值,計算該待測件之應變量。The strain of the test piece is calculated according to the light intensity value of the secondary polarized light beam.
該撓性柱狀陣列隨著待測件的微位移而產生形變,使其中的液晶分子隨之改變其配向排列,當量測光束通過液晶後,光束的偏振狀態受液晶分子之傾角變化而改變,當其通過原偏振方向之線性偏振片進行二次偏極化處理後,將使光束強度衰減,故根據光束強度值可計算出待測件的微位移的變化量。該應變感測模組無需實體導線電性連接,藉由光接收裝置以非接觸方式接收通過該應變感測模組的光束,便可計算出待測件的微位移量。The flexible columnar array deforms with the micro-displacement of the device under test, causing the liquid crystal molecules therein to change their alignment. When the measuring light beam passes through the liquid crystal, the polarization state of the light beam changes due to the tilt angle change of the liquid crystal molecules. When it passes through the linear polarizer in the original polarization direction for secondary polarization, the intensity of the light beam will be attenuated. Therefore, the change in the micro-displacement of the device under test can be calculated based on the light beam intensity value. The strain sensing module does not require physical wire electrical connection. The light beam passing through the strain sensing module can be received by the light receiving device in a non-contact manner to calculate the micro-displacement of the device under test.
請參考圖1所示,本創作是一種微應變位移量測裝置,在第一實施例中,本創作包含有一光源10、一應變感測模組20及一光信號處理模組30。Please refer to FIG. 1 , the present invention is a micro-strain displacement measuring device. In a first embodiment, the present invention includes a
該光源10用於提供光源光束L1,例如以一雷射光源輸出該光源光束L1。在本實施例中,該光源10輸出的光源光束L1經過後續的光學元件進行第一次偏極化處理後,成為具有固定強度的一量測光束L2,後續將有更詳細的具體說明。The
該應變感測模組20是一種基於液晶(liquid crystal-)構成的應變感測模組,包含有一撓性柱狀陣列21、液晶層22、一第一基板23及一第二基板24。該撓性柱狀陣列21為奈米撓性柱狀陣列結構,該撓性柱狀陣列21包含複數個緊密排列之微柱體210,相鄰微柱體210之間形成縫隙空間211;該撓性柱狀陣列21的結構可透過不同方法製成,例如透過奈米壓印技術,而本創作使用鋁陽極氧化技術先製作出一犧牲性的多孔陽極氧化鋁模板,則可獲得較高之深寬比(例如4:1~10:1)的奈米柱狀結構,在該多孔陽極氧化鋁模板中的孔隙中填充可撓性聚合物,最後蝕刻去除該多孔陽極氧化鋁模板,保留下來之聚合物結構即可成為本創作所需之撓性柱狀陣列21,前述液晶層22係填充在該縫隙空間211內部。The
在該撓性柱狀陣列21的上、下表面分別設置該第一基板23與該第二基板24,該第一基板23與第二基板24的尺寸大於該撓性柱狀陣列21,該第一基板23與第二基板24用於將該應變感測模組20設置在一待測件O的表面。如圖2所示,為了便於說明該應變感測模組20如何設置在待測件O的表面,圖中將該撓性柱狀陣列21及液晶層22合併簡化表示,假設待測件O的應變方向為沿著X軸運動,該第一基板23其一側(例如朝向正X軸方向的側緣)的第一固定點231延伸附著在該待測件O的表面,而第二基板24以相對的另一側(例如朝向負X軸方向的側緣)的第二固定點241延伸附著在該待測件O的表面,使得該第一基板23與第二基板24以相反方向的第一固定點231、第二固定點241分別固定在該待測件O的表面。在本實施例中,該第二基板24的表面係形成有一反射膜25,該反射膜25可形成在第二基板24的外側表面或內側表面,並不限制。The
該光信號處理模組30包含有一光接收器31以及一信號處理裝置32,該光接收器31係接收從應變感測模組20返回的光束,該信號處理裝置32係電性連接該光接收器31,用於計算該光接收器31偵測出的光束強度。The optical
本創作可以根據光束的去、返途徑,視需求在光束的路徑上加入一分光鏡40及一線性偏振片51,例如在圖1實施例中,從光源10輸出光源光束L1,該光源光束L1透過該分光鏡40以90度角反射而入射至該線性偏振片51,該線性偏振片51允許特定偏振方向的光束通過,通過該線性偏振片51後成為單一偏振方向的線性偏極光束,此為第一次偏極化處理,形成一量測光束L2,該量測光束L2的強度維持固定。該量測光束L2從第一基板23的表面入射至應變感測模組20後,會被第二基板24的反射膜25以180度反射而再次通過該第一基板23後出射,圖1表示在待測件無相對位移時,調變光束R1離開該應變感測模組20,再經過該線性偏振片51而成為二次偏極光束R2,此為第二次偏極化處理,該二次偏極光束R2通過該分光鏡40後進入至光接收器31,再由該信號處理裝置32計算出二次偏極光束R2’的光強度值。According to the outgoing and return paths of the light beam, the invention can add a
請參考圖3所示,為前述第一實施例的應用示意圖,當該待測件O的表面產生應變,即固定在待測件O表面之第一基板23與該第二基板24之間發生相對位移,使該撓性柱狀陣列21產生彎曲形變,進而改變該液晶層22中
各複數個液晶分子的配向排列,該複數個液晶分子的傾角會產生變化,當第一基板23、第二基板24之間的相對位移越大,該複數個液晶分子的傾角角度也會越大。量測光束L2從第一基板23入射到該液晶層22後,該量測光束L2會受到扭轉的液晶分子改變其偏振方向,藉由該反射膜25反射後再次通過該液晶層22,已改變偏振方向之調變光束R1,再次通過該線性偏振片51濾除其與第一次偏極化方向垂直分量後成為二次偏極光束R2,因此進入光接收器31的二次偏極光束R2’的光強度值會降低。當第一基板23、第二基板24之間的相對位移越大,該液晶分子的傾角角度也會越大,調變光束R1偏振方向的改變也會越大,進入光接收器31的光強度會越加衰減。
Please refer to FIG. 3, which is a schematic diagram of the application of the first embodiment. When the surface of the test piece O is strained, that is, a relative displacement occurs between the
該第一基板23與該第二基板24之間在沒有相對位移情況下所預先測得之光強度(如圖1狀態)作為一參考值,而該第一基板23與該第二基板24實際發生相對位移後(如圖3狀態)測得之光強度作為一量測值,該信號處理裝置32藉由比較該參考值及量測值之間的差異大小,計算出該第一基板23與該第二基板24之間的相對位移量,從而得知待測件O的應變。The light intensity pre-measured without relative displacement between the
請參考圖4、圖5所示的本創作第二實施例,該第二實施例適用於量測可透光的待測件O。相較於第一實施例,第二實施例在該第二基板24不必具有一反射膜25,允許光線穿透該第二基板24,另一方面,從光源10發射的光源光束L1亦不需經過一分光鏡40,而是直接沿著光束路徑先通過一第一線性偏振片52進行第一次偏極化處理成為一量測光束L2,再入射至該應變感測模組20,該量測光束L2從第二基板24出射後通過該待測件O,成為一調變光束R1,再經過一第二線性偏振片53,第二線性偏振片53與第一線性偏振片52有相同偏振方向,進行第二次偏極化處理成為一二次偏極光束R2,該二次偏極光束R2由該光接收器31接收後,該信號處理裝置32根據該光強度值計算出待測件O的應變。Please refer to the second embodiment of the present invention shown in FIG. 4 and FIG. 5. The second embodiment is suitable for measuring a light-transmissive test piece O. Compared with the first embodiment, the second embodiment does not need to have a
在圖4、圖5的第二實施例中,為了能夠較準確地計出待測件O的應變量,在預先設定該信號處理裝置32的參考值時,可將待測件O設置在調變光束R1光傳路徑中並維持該待測件O無應變靜止不動,如此狀態下測得之參考值能考慮到該透光之待測件O對光束的影響,故穿過待測件O之二次偏極光束R2的光強度值能作為較準確的參考值。In the second embodiment of FIG. 4 and FIG. 5 , in order to more accurately calculate the strain of the device under test O, when the reference value of the
本發明利用撓性柱狀陣列中之液晶分子的旋轉而反應待測件的微位移,當光束自液晶離開時,其偏振狀態受液晶分子之傾角變化而改變,經過第二次偏極化處理後,令其光束強度衰減,故根據光束強度值可計算出微位移的變化量。本創作之應變感測模組為一被動元件,無須額外電性連接導線、設置電源,藉由遠距的量測光束以非接觸方式量測此應變感測模組之微位移量;該應變感測模組之撓性柱狀陣列係利用犧牲性模板製作出之奈米柱矩陣結構,不需使用複雜、高成本之光學微影半導體製程。The present invention utilizes the rotation of liquid crystal molecules in a flexible columnar array to respond to the micro-displacement of the object to be tested. When the light beam leaves the liquid crystal, its polarization state is changed by the tilt angle change of the liquid crystal molecules. After the second polarization treatment, the intensity of the light beam is attenuated, so the change in micro-displacement can be calculated based on the light beam intensity value. The strain sensing module of this invention is a passive element, which does not require additional electrical connection wires or power supply. The micro-displacement of this strain sensing module is measured in a non-contact manner by a remote measurement beam; the flexible columnar array of the strain sensing module is a nano-column matrix structure made using a sacrificial template, and does not require the use of complex and high-cost optical lithography semiconductor processes.
10:光源 20:應變感測模組 21:撓性柱狀陣列 210:微柱體 211:縫隙空間 22:液晶層 23:第一基板 231:第一固定點 24:第二基板 241:第二固定點 25:反射膜 30:光信號處理模組 31:光接收器 32:信號處理裝置 40:分光鏡 51: 線性偏振片 52:第一線性偏振片 53:第二線性偏振片 L1,L1’:光源光束 L2:量測光束 R1:調變光束 R2,R2’:二次偏極光束 O:待測件 100:金屬線 110:承載膜片 120:信號導線10: Light source 20: Strain sensing module 21: Flexible columnar array 210: Microcolumn 211: Gap space 22: Liquid crystal layer 23: First substrate 231: First fixed point 24: Second substrate 241: Second fixed point 25: Reflection film 30: Optical signal processing module 31: Optical receiver 32: Signal processing device 40: Spectroscope 51: Linear polarizer 52: First linear polarizer 53: Second linear polarizer L1, L1’: Light source beam L2: Measurement beam R1: Modulation beam R2, R2’: Secondary polarization beam O: DUT 100: Metal wire 110: Carrier film 120: Signal wire
圖1:本創作微應變位移量測裝置第一實施例的示意圖。 圖2:本創作之應變感測模組設置在待測件表面的示意圖。 圖3:本創作圖1實施例的使用示意圖。 圖4:本創作微應變位移量測裝置第二實施例的示意圖。 圖5:本創作圖2實施例的使用示意圖。 圖6:現有應變規之平面示意圖。 Figure 1: Schematic diagram of the first embodiment of the micro-strain displacement measuring device of the present invention. Figure 2: Schematic diagram of the strain sensing module of the present invention set on the surface of the test piece. Figure 3: Schematic diagram of the use of the embodiment of Figure 1 of the present invention. Figure 4: Schematic diagram of the second embodiment of the micro-strain displacement measuring device of the present invention. Figure 5: Schematic diagram of the use of the embodiment of Figure 2 of the present invention. Figure 6: Planar schematic diagram of the existing strain gauge.
10:光源 10: Light source
20:應變感測模組 20: Strain sensing module
21:撓性柱狀陣列 21: Flexible columnar array
210:微柱體 210: Micro-columns
211:縫隙空間 211: Gap Space
22:液晶層 22: Liquid crystal layer
23:第一基板 23: First substrate
24:第二基板 24: Second substrate
25:反射膜 25: Reflective film
30:光信號處理模組 30: Optical signal processing module
31:光接收器 31: Optical receiver
32:信號處理裝置 32:Signal processing device
40:分光鏡 40: Spectroscope
51:線性偏振片 51: Linear polarizer
L1,L1’:光源光束 L1, L1’: light source beam
L2:量測光束 L2: Measurement beam
R1:調變光束 R1: Modulate the beam
R2,R2’:二次偏極光束 R2, R2’: secondary polarized beam
Claims (10)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW389832B (en) * | 1999-08-30 | 2000-05-11 | Chen Yuan Fang | Digital speckle deformation measurement system |
| TW200411153A (en) * | 2002-12-18 | 2004-07-01 | Advancewave Technology Inc | Strain gauge apparatus having a point-distributed sensor |
| TW201202073A (en) * | 2010-04-30 | 2012-01-16 | Meidensha Electric Mfg Co Ltd | Contact force measurement method and contact force measurement device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW389832B (en) * | 1999-08-30 | 2000-05-11 | Chen Yuan Fang | Digital speckle deformation measurement system |
| TW200411153A (en) * | 2002-12-18 | 2004-07-01 | Advancewave Technology Inc | Strain gauge apparatus having a point-distributed sensor |
| TW201202073A (en) * | 2010-04-30 | 2012-01-16 | Meidensha Electric Mfg Co Ltd | Contact force measurement method and contact force measurement device |
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