TWI863057B - 耐電漿侵蝕的光學結構 - Google Patents
耐電漿侵蝕的光學結構 Download PDFInfo
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- TWI863057B TWI863057B TW111147587A TW111147587A TWI863057B TW I863057 B TWI863057 B TW I863057B TW 111147587 A TW111147587 A TW 111147587A TW 111147587 A TW111147587 A TW 111147587A TW I863057 B TWI863057 B TW I863057B
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- 239000012788 optical film Substances 0.000 claims abstract description 166
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims description 74
- 230000003628 erosive effect Effects 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 238000005240 physical vapour deposition Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 9
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 4
- CHBIYWIUHAZZNR-UHFFFAOYSA-N [Y].FOF Chemical compound [Y].FOF CHBIYWIUHAZZNR-UHFFFAOYSA-N 0.000 claims description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 3
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 53
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 19
- 238000010586 diagram Methods 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000004408 titanium dioxide Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
本發明之耐電漿侵蝕的光學結構包括一透光基材及一耐電漿光學膜層，耐電漿光學膜層是設置於透光基材的一表面上。此外，耐電漿光學膜層包括至少一第一光學薄膜及至少一第二光學薄膜，第二光學薄膜是疊合在第一光學薄膜上。其中，第一光學薄膜的密度不小於4.5。耐電漿侵蝕的光學結構對於電漿具有較佳的抗侵蝕性。
Description
本發明涉及一種光學結構，特別是指一種耐電漿侵蝕的光學結構。
電漿的沉積製程或蝕刻製程會透過光譜分析儀(Optical Emission Spectrometer, OES)來監測電漿所產生的發射線，以控制氣體流量與膜層的沉積。其中，光譜分析儀的電荷耦合元件(Charge-Coupled Device, CCD)皆是透過石英玻璃觀測窗進行取樣。然而，石英玻璃抵抗電漿侵蝕的能力不佳，其表面易受電漿轟擊導致粉塵掉落。
因此，如何設計出一個耐侵蝕性的觀測窗，便是本領域具有通常知識者值得去思量地。
本發明之目的在於提供一耐電漿侵蝕的光學結構，該耐電漿侵蝕的光學結構對於電漿具有較佳的抗侵蝕性。
本發明之耐電漿侵蝕的光學結構包括一透光基材及一耐電漿光學膜層，耐電漿光學膜層是設置於透光基材的一表面上。此外，耐電漿光學膜層包括至少一第一光學薄膜及至少一第二光學薄膜，第二光學薄膜是疊合在第一光學薄膜上。其中，第一光學薄膜的密度不小於4.5。
在上所述的耐電漿侵蝕的光學結構中，耐電漿光學膜層的最外層的薄膜為第一光學薄膜。
在上所述的耐電漿侵蝕的光學結構中，當該第一光學薄膜或該第二光學薄膜的至少其中之一的數量為複數時，則該第一光學薄膜及該第二光學薄膜相互交錯疊合。
在上所述的耐電漿侵蝕的光學結構中，耐電漿光學膜層還包括至少一第三光學薄膜，當第三光學薄膜或該第二光學薄膜的至少其中之一的數量為複數時，則該第三光學薄膜及該第二光學薄膜相互交錯疊合。
在上所述的耐電漿侵蝕的光學結構中，耐電漿光學膜層朝向一真空腔體的內部。
在上所述的耐電漿侵蝕的光學結構中，第一光學薄膜選自三氟化釔(YF
3)、氧化鉺(Er
2O
3)、氧化釓(Gd
2O
3)、氧化釔(Y
2O
3)、氟氧化釔(YOF)、釔鋁石榴石(YAG, Y
3Al
5O
12)、YAM(Y
4Al
2O
9)、或EAG(Er
3Al
5O
12) 。
在上所述的耐電漿侵蝕的光學結構中，第一光學薄膜的折射率不同於該第二光學薄膜的折射率。
在上所述的耐電漿侵蝕的光學結構中，第一光學薄膜及第二光學薄膜採物理氣象沉積法（Physical Vapor Deposition，PVD）形成，該物理氣象沉積法可選自電子束轟擊蒸鍍法(E-gun)或電漿離子輔助物理氣象沉積法。
在上所述的耐電漿侵蝕的光學結構中，第一光學薄膜及該第二光學薄膜採化學氣象沉積法(CVD)形成，該化學氣象沉積法可選自化學氣象沉積法(CVD)、電漿輔助化學氣象沉積法(PECVD)或原子層沉積法(ALD)。
在上所述的耐電漿侵蝕的光學結構還包刮一金屬反射層，該金屬反射層置於該透光基材與該耐電漿光學膜層之間。
在上所述的耐電漿侵蝕的光學結構還包刮一緩衝層，該緩衝層置於該透光基材與該耐電漿光學膜層之間。
在上所述的耐電漿侵蝕的光學結構中，該緩衝層的膨脹係數介於該透光基材的膨脹係數與該耐電漿光學膜層的膨脹係數之間。
在上所述的耐電漿侵蝕的光學結構還包括一低密度光學膜層，低密度光學膜層設置於該透光基材的另一表面，該低密度光學膜層的密度小於4。
本發明具有下述優點：對於電漿具有較佳的抗侵蝕性。
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。
請參閱圖1，圖1所繪示第一實施例之耐電漿侵蝕的光學結構10的示意圖。耐電漿侵蝕的光學結構10通常是安置於一真空腔體8的側壁，電漿是在真空腔體8內運作。
耐電漿侵蝕的光學結構10包括一透光基材11及一耐電漿光學膜層12。其中，耐電漿光學膜層12的其中一面是朝向真空腔體8的內部，且耐電漿光學膜層12的另一面是設置於透光基材11的一表面上，透光基材11例如為石英，透光基材11相當於一用於監測電漿的觀測窗。
上述中，所謂耐電漿光學膜層12設置於透光基材11上，並不侷限於耐電漿光學膜層12是直接沉積於透光基材11上，耐電漿光學膜層12與透光基材11之間還能沉積其他的薄膜。
請再次參閱圖1，耐電漿光學膜層12包括至少一第一光學薄膜121及至少一第二光學薄膜122，且第二光學薄膜122是疊合在第一光學薄膜121上。具體來說，在此實施例中，耐電漿光學膜層12是包括四個第一光學薄膜121及三個第二光學薄膜122，且該第一光學薄膜121及該第二光學薄膜122是相互交錯疊合(請參閱圖1A)。因此，耐電漿光學膜層12位於最裡層的薄膜及最外層的薄膜皆為第一光學薄膜121，且最裡層的第一光學薄膜121是設置於透光基材11上，而最外層的第一光學薄膜121是朝向真空腔體8直接與電漿進行接觸。
在本實施例中，第一光學薄膜121的主要材料為密度不小於4.5之金屬氧化物、氟化物或氮化物，例如為三氟化釔(YF
3)、氧化鉺(Er
2O
3)、氧化釓(Gd
2O
3)、氧化釔(Y
2O
3)、氟氧化釔(YOF)、釔鋁石榴石(YAG, Y
3Al
5O
12)、YAM(Y
4Al
2O
9)或EAG(Er
3Al
5O
12)。由於第一光學薄膜121是屬於扎實的高密度結構，所以第一光學薄膜121較能承受電漿中之離子或中性原子的轟擊。 因此，耐電漿光學膜層12有助於防止電漿侵蝕透光基材11，也就是防止觀測窗被電漿侵蝕。
此外，在此實施例中，第一光學薄膜121的折射率是不同於第二光學薄膜122的折射率。舉例來說，第一光學薄膜121例如為氧化釔(Y
2O
3)，其折射率為1.9，而第二光學薄膜122例如為二氧化鈦（TiO
2），其折射率為2.4。因此，由上至下交錯排列形成：小折射率光學薄膜(氧化釔)→大折射率光學薄膜(二氧化鈦)→小折射率光學薄膜(氧化釔)→大折射率光學薄膜之結構(二氧化鈦)→小折射率光學薄膜(氧化釔)→大折射率光學薄膜(二氧化鈦)→小折射率光學薄膜(氧化釔)之光學結構。如此一來，依據光學原理，耐電漿侵蝕的光學結構10會具備較佳之透光性。
另外，請參閱圖2，圖2所繪示為第二實施例之耐電漿侵蝕的光學結構20的示意圖。耐電漿侵蝕的光學結構20與耐電漿侵蝕的光學結構10的差異在於：耐電漿侵蝕的光學結構20的耐電漿光學膜層22是包括四個第二光學薄膜122。換句話說，第二光學薄膜122的數量是相同於第一光學薄膜121的數量。這樣一來，為了使耐電漿光學膜層22最外層的薄膜便為第一光學薄膜121，所以耐電漿光學膜層22最裡層的薄膜便為第二光學薄膜122。並且，最裡層的第二光學薄膜122是設置於透光基材11上。
此外，在第二實施例中，耐電漿光學膜層22的第一光學薄膜121的折射率是也不同於第二光學薄膜122的折射率。舉例來說，電漿光學膜層22的第一光學薄膜121例如為氧化釔(Y
2O
3)，其折射率為1.9，而電漿光學膜層22的第二光學薄膜122例如為非晶矽（Amorphous silicon, a-Si），其折射率為3.5。因此，由上至下交錯排列形成：大折射率光學薄膜(非晶矽)→小折射率光學薄膜(二氧化鈦)→大折射率光學薄膜之結構(非晶矽)→小折射率光學薄膜(二氧化鈦)→大折射率光學薄膜(非晶矽)→小折射率光學薄膜(二氧化鈦) →大折射率光學薄膜(非晶矽)→小折射率光學薄膜(二氧化鈦)之光學結構。如此一來，依據光學原理，耐電漿侵蝕的光學結構20會具備較佳之反射特性。
上述中，第一光學薄膜121及第二光學薄膜122是採物理氣象沉積法（Physical Vapor Deposition，PVD）或化學氣象沉積法(CVD)而形成。其中，該物理氣象沉積法可選自電子束轟擊蒸鍍法(E-gun)或電漿離子輔助物理氣象沉積法，而該化學氣象沉積法可選自化學氣象沉積法(CVD)、電漿輔助化學氣象沉積法(PECVD)或原子層沉積法(ALD)。
請參閱圖3，圖3所繪示為第三實施例之耐電漿侵蝕的光學結構30的示意圖。耐電漿侵蝕的光學結構30與耐電漿侵蝕的光學結構10的差異在於：耐電漿侵蝕的光學結構30的耐電漿光學膜層32還包括三個第三光學薄膜323，且耐電漿光學膜層32是只具有一個第一光學薄膜121，此第一光學薄膜121是直接朝向真空腔體8與電漿接觸。其中，三個第三光學薄膜323是與三個第二光學薄膜122相互交錯疊合，第三光學薄膜323的主要材料例如為二氧化矽(SiO
2)、二氧化鈦(TiO
2)或氧化鋁(Al
2O
3)
、非晶矽（Amorphous silicon, a-Si）或矽的氮化物(SiNx)，這些材料的密度皆是小於4，是屬於低密度的光學薄膜。由於耐電漿光學膜層32最外層的薄膜同樣為高密度的第一光學薄膜121，且所有低密度的第三光學薄膜323的表面不需要接觸到電漿環境，所以耐電漿侵蝕的光學結構30同樣有助於防止電漿侵蝕透光基材11，也就是防止觀測窗被電漿侵蝕。
請參閱圖4，圖4所繪示為第四實施例之耐電漿侵蝕的光學結構40的示意圖。耐電漿侵蝕的光學結構40與耐電漿侵蝕的光學結構20的差異在於：耐電漿侵蝕的光學結構40還包刮一金屬反射層43，金屬反射層43是置於透光基材11與耐電漿光學膜層22之間。其中，金屬反射層43的主要材質例如為銀(Ag)，其折射率較低且反射率較高，所以耐電漿侵蝕的光學結構40便具備更佳之反射特性。
請參閱圖5，圖5所繪示為第五實施例之耐電漿侵蝕的光學結構50的示意圖。耐電漿侵蝕的光學結構50與耐電漿侵蝕的光學結構10的差異在於：耐電漿侵蝕的光學結構50還包刮一緩衝層53，緩衝層53是置於透光基材11與耐電漿光學膜層12之間，緩衝層53的主要材質例如為矽的氮化物(SiNx)、氧化鋁(Al
2O
3)、五氧化二鈮(Nb
2O
5)或二氧化鋯(ZrO
2)。值得注意的是，緩衝層53的膨脹係數是介於透光基材11的膨脹係數與耐電漿光學膜層12的膨脹係數之間。這樣一來，緩衝層53能避免真空腔體8因加熱或冷卻之製程變異的熱應力導致耐電漿光學膜層12產生剝離。
請參閱圖6，圖6所繪示為第六實施例之耐電漿侵蝕的光學結構60的示意圖。耐電漿侵蝕的光學結構60與耐電漿侵蝕的光學結構10的差異在於：耐電漿侵蝕的光學結構60還包刮一低密度光學膜層63，低密度光學膜層63可為單層亦可為兩種不同折射率之低密度光學膜層交疊而成，其主要材料例如為二氧化矽(SiO
2)、二氧化鈦(TiO
2)或氧化鋁(Al
2O
3)
、非晶矽（Amorphous silicon, a-Si）或矽的氮化物(SiNx)，且這些材料的密度是小於4，以使耐電漿侵蝕的光學結構60進一步具備較佳之透光性。此外，低密度光學膜層63是設置於透光基材11的另一表面，所以低密度光學膜層63也不會接觸電漿環境。這樣一來，耐電漿侵蝕的光學結構60同樣能經由耐電漿光學膜層12來防止電漿侵蝕透光基材11。值得一提的是，低密度光學膜層63亦可依據光學原理設置於如耐電漿侵蝕的光學結構20上，而進一步增加反射率。
本發明之耐電漿侵蝕的光學結構對於電漿具有較佳的抗侵蝕性，且耐電漿侵蝕的光學結構還具備較佳的透光性或較佳的反射特性。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10、20、30、40、50、60:耐電漿侵蝕的光學結構
11:透光基材
12、22、32:耐電漿光學膜層
121:第一光學薄膜
122:第二光學薄膜
323:第三光學薄膜
8:真空腔體
43:金屬反射層
53:緩衝層
63:低密度光學膜層
圖1所繪示為第一實施例之耐電漿侵蝕的光學結構10的示意圖。
圖2所繪示為第二實施例之耐電漿侵蝕的光學結構20的示意圖。
圖3所繪示為第三實施例之耐電漿侵蝕的光學結構30的示意圖。
圖4所繪示為第四實施例之耐電漿侵蝕的光學結構40的示意圖。
圖5所繪示為第五實施例之耐電漿侵蝕的光學結構50的示意圖。
圖6所繪示為第六實施例之耐電漿侵蝕的光學結構60的示意圖。
10:耐電漿侵蝕的光學結構
11:透光基材
12:耐電漿光學膜層
121:第一光學薄膜
122:第二光學薄膜
8:真空腔體
Claims (12)
- 一種耐電漿侵蝕的光學結構，包括：一透光基材；及一耐電漿光學膜層，設置於該透光基材的一表面上，該耐電漿光學膜層包括：至少一第一光學薄膜；及至少一第二光學薄膜，疊合在該第一光學薄膜上；其中，該第一光學薄膜的密度不小於4.5，且該耐電漿光學膜層朝向一真空腔體的內部。
- 如請求項1所述的耐電漿侵蝕的光學結構，其中，該耐電漿光學膜層的最外層的薄膜為該第一光學薄膜。
- 如請求項2所述的耐電漿侵蝕的光學結構，其中，當該第一光學薄膜或第二光學薄膜的至少其中之一的數量為複數時，則該第一光學薄膜及該第二光學薄膜相互交錯疊合。
- 如請求項2所述的耐電漿侵蝕的光學結構，其中，該耐電漿光學膜層還包括至少一第三光學薄膜，當該第三光學薄膜或該第二光學薄膜的至少其中之一的數量為複數時，則該第三光學薄膜及該第二光學薄膜相互交錯疊合。
- 如請求項1所述的耐電漿侵蝕的光學結構，其中，該第一光學薄膜選自三氟化釔(YF3)、氧化鉺(Er2O3)、氧化釓(Gd2O3)、氧化釔(Y2O3)、氟氧化釔(YOF)、釔鋁石榴石(YAG,Y3Al5O12)、YAM(Y4Al2O9)、或EAG(Er3Al5O12)。
- 如請求項1所述的耐電漿侵蝕的光學結構，其中，該第一光學薄膜的折射率不同於該第二光學薄膜的折射率。
- 如請求項1所述的耐電漿侵蝕的光學結構，其中，該第一光學薄膜及該第二光學薄膜採物理氣象沉積法(Physical Vapor Deposition，PVD)形成，該物理氣象沉積法可選自電子束轟擊蒸鍍法(E-gun)或電漿離子輔助物理氣象沉積法。
- 如請求項1所述的耐電漿侵蝕的光學結構，其中，該第一光學薄膜及該第二光學薄膜採化學氣象沉積法(CVD)形成，該化學氣象沉積法可選自化學氣象沉積法(CVD)、電漿輔助化學氣象沉積法(PECVD)或原子層沉積法(ALD)。
- 如請求項1所述的耐電漿侵蝕的光學結構，還包刮一金屬反射層，該金屬反射層置於該透光基材與該耐電漿光學膜層之間。
- 如請求項1所述的耐電漿侵蝕的光學結構，還包刮一緩衝層，該緩衝層置於該透光基材與該耐電漿光學膜層之間。
- 如請求項10所述的耐電漿侵蝕的光學結構，其中，該緩衝層的膨脹係數介於該透光基材的膨脹係數與該耐電漿光學膜層的膨脹係數之間。
- 如請求項1所述的耐電漿侵蝕的光學結構，還包括一低密度光學膜層，該低密度光學膜層設置於該透光基材的另一表面，該低密度光學膜層的密度小於4。
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| JPH06313802A (ja) * | 1993-04-28 | 1994-11-08 | Topcon Corp | 赤外域多層膜 |
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| US20110135915A1 (en) * | 2009-11-25 | 2011-06-09 | Greene, Tweed Of Delaware, Inc. | Methods of Coating Substrate With Plasma Resistant Coatings and Related Coated Substrates |
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