TWI862185B - Memory clock control method and control device - Google Patents
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本發明係關於一種記憶體時脈控制方法及控制裝置。The present invention relates to a memory clock control method and a control device.
在一般的電腦設備中,隨機存取記憶體(random-access memory,RAM)是與中央處理器直接交換資料的記憶體,其時脈表示資料進出記憶體的頻率,越高表示每秒能執行的傳輸次數越多。現今非超頻記憶體的製造廠商為了其產品的穩定性,記憶體在出廠時,通常被預先設定時脈僅能在一出廠預設時脈範圍之內,所述出廠預設時脈範圍小於記憶體本身有能力運作的時脈範圍。因此,若使用者欲使電腦設備的非超頻記憶體可以在更高的處理速度下工作,往往需要先手動調整記憶體的出廠設定,才能進行所謂超頻的操作,其過程繁複且容易出現問題。In general computer equipment, random-access memory (RAM) is the memory that directly exchanges data with the central processing unit. Its clock rate indicates the frequency of data entering and exiting the memory. The higher the clock rate, the more transfers can be performed per second. In order to ensure the stability of their products, manufacturers of non-overclocked memory usually pre-set the clock rate of the memory to only be within a factory default clock rate range when it leaves the factory. The factory default clock rate range is smaller than the clock rate range that the memory itself is capable of operating. Therefore, if users want to make the non-overclocked memory of computer equipment work at a higher processing speed, they often need to manually adjust the factory settings of the memory before performing the so-called overclocking operation. The process is complicated and prone to problems.
鑒於上述,本發明提供一種記憶體時脈控制方法及控制裝置。In view of the above, the present invention provides a memory clock control method and a control device.
依據本發明一實施例的記憶體時脈控制方法,包含以一基本輸入輸出晶片受一開機訊號觸發以向一輔助輸入輸出晶片發出一起始訊號;以所述輔助輸入輸出晶片受所述起始訊號觸發以根據預存的一電壓控制資料設定一腳位的一電壓,其中所述腳位連接於一記憶體且所述電壓用於控制所述記憶體的一時脈模式;當所述基本輸入輸出晶片受控產生關聯於所述記憶體的一變更時脈指令時,以所述基本輸入輸出晶片根據一變更時脈指令調整所述輔助輸入輸出晶片的所述電壓控制資料,並執行重新開機程序以重新向所述輔助輸入輸出晶片發出所述起始訊號,其中,調整前的電壓控制資料對應的一第一時脈模式為非超頻模式,且調整後的電壓控制資料對應的一第二時脈模式為超頻模式。According to an embodiment of the present invention, a memory clock control method comprises the steps of: a basic input-output chip is triggered by a power-on signal to send a start signal to an auxiliary input-output chip; the auxiliary input-output chip is triggered by the start signal to set a voltage of a pin according to a pre-stored voltage control data, wherein the pin is connected to a memory and the voltage is used to control a clock mode of the memory; when the basic input-output chip is controlled to generate a start signal, the auxiliary input-output chip is triggered by the start signal to set a voltage of a pin according to a pre-stored voltage control data; When a change clock instruction associated with the memory is generated, the basic input-output chip adjusts the voltage control data of the auxiliary input-output chip according to the change clock instruction, and executes a restart procedure to re-send the start signal to the auxiliary input-output chip, wherein a first clock mode corresponding to the voltage control data before adjustment is a non-overclocking mode, and a second clock mode corresponding to the voltage control data after adjustment is an overclocking mode.
依據本發明一實施例的記憶體時脈控制裝置,包含一處理器、一記憶體、一輔助輸入輸出晶片以及一基本輸入輸出晶片。所述記憶體連接於所述處理器。所述輔助輸入輸出晶片連接於所述記憶體,用於受一起始訊號觸發以根據預存的一電壓控制資料設定所述輔助輸入輸出晶片的一腳位的一電壓,其中所述腳位連接於所述記憶體且所述電壓用於控制所述記憶體的一時脈模式。所述基本輸入輸出晶片連接於所述處理器及所述輔助輸入輸出晶片,且用於受一開機訊號觸發以向所述輔助輸入輸出晶片發出一起始訊號;當受控產生關聯於所述記憶體的一變更時脈指令時,根據所述變更時脈指令調整所述輔助輸入輸出晶片的所述電壓控制資料,並執行重新開機程序以重新向所述輔助輸入輸出晶片發出所述起始訊號,其中,調整前的所述電壓控制資料對應的一第一時脈模式為非超頻模式,且調整後的所述電壓控制資料對應的一第二時脈模式為超頻模式。A memory clock control device according to an embodiment of the present invention comprises a processor, a memory, an auxiliary input-output chip and a basic input-output chip. The memory is connected to the processor. The auxiliary input-output chip is connected to the memory and is used to be triggered by a start signal to set a voltage of a pin of the auxiliary input-output chip according to a pre-stored voltage control data, wherein the pin is connected to the memory and the voltage is used to control a clock mode of the memory. The basic input-output chip is connected to the processor and the auxiliary input-output chip, and is used to be triggered by a power-on signal to send a start signal to the auxiliary input-output chip; when a change clock instruction related to the memory is generated under control, the voltage control data of the auxiliary input-output chip is adjusted according to the change clock instruction, and a restart procedure is executed to re-send the start signal to the auxiliary input-output chip, wherein a first clock mode corresponding to the voltage control data before adjustment is a non-overclocking mode, and a second clock mode corresponding to the voltage control data after adjustment is an overclocking mode.
藉由上述結構,本案所揭示的記憶體時脈控制方法及控制裝置,可透過基本輸入輸出晶片依據使用者最後一次儲存設定的記憶體超頻模式,將對應的電壓控制資料儲存在輔助輸入輸出晶片中,再根據判斷輔助輸入輸出晶片中的電壓控制資料是否改變來決定是否改變輔助輸入輸出晶片的一特定腳位的電壓,且該特定腳位連接於記憶體,藉此調整記憶體運作於非出廠預設的時脈頻率範圍。採用本案的記憶體時脈控制方法及控制裝置的電腦設備在啟動電源到基本輸入輸出晶片開機程序的這段過程中,可自動偵測記憶體是否要進入到超頻模式並進行對應調整。Through the above structure, the memory clock control method and control device disclosed in this case can store the corresponding voltage control data in the auxiliary input and output chip according to the memory overclocking mode last stored and set by the user through the basic input and output chip, and then decide whether to change the voltage of a specific pin of the auxiliary input and output chip based on whether the voltage control data in the auxiliary input and output chip changes, and the specific pin is connected to the memory, thereby adjusting the memory to operate in a clock frequency range that is not preset by the factory. The computer device using the memory clock control method and control device of the present case can automatically detect whether the memory is to enter the overclocking mode and make corresponding adjustments during the process from starting the power supply to the basic input and output chip boot program.
以上之關於本揭露內容之說明及以下之實施方式之說明係用以示範與解釋本發明之精神與原理,並且提供本發明之專利申請範圍更進一步之解釋。The above description of the disclosed content and the following description of the implementation methods are used to demonstrate and explain the spirit and principle of the present invention, and provide a further explanation of the scope of the patent application of the present invention.
以下在實施方式中詳細敘述本發明之詳細特徵以及優點,其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點,但非以任何觀點限制本發明之範疇。The following detailed description of the features and advantages of the present invention is provided in the implementation mode, and the content is sufficient to enable any person skilled in the relevant art to understand the technical content of the present invention and implement it accordingly. Moreover, according to the content disclosed in this specification, the scope of the patent application and the drawings, any person skilled in the relevant art can easily understand the relevant purposes and advantages of the present invention. The following embodiments are to further explain the viewpoints of the present invention in detail, but are not to limit the scope of the present invention by any viewpoint.
請參考圖1,圖1係依據本發明一實施例所繪示的記憶體時脈控制裝置的方塊圖。如圖1所示,記憶體時脈控制裝置100包含一處理器1、一記憶體2、一輔助輸入輸出晶片3以及一基本輸入輸出晶片4。記憶體2連接於處理器1。輔助輸入輸出晶片3連接於記憶體2,用於受一起始訊號觸發以根據預存的一電壓控制資料設定輔助輸入輸出晶片3的一腳位的一電壓,其中所述腳位連接於記憶體2且所述電壓用於控制記憶體2的一時脈模式。基本輸入輸出晶片4連接於處理器1及輔助輸入輸出晶片3,且用於受一開機訊號觸發以向輔助輸入輸出晶片3發出一起始訊號;當受控產生關聯於記憶體2的一變更時脈指令時,根據所述變更時脈指令調整輔助輸入輸出晶片3的所述電壓控制資料,並執行重新開機程序以重新向輔助輸入輸出晶片3發出所述起始訊號,其中,調整前的所述電壓控制資料對應的一第一時脈模式為非超頻模式,且調整後的所述電壓控制資料對應的一第二時脈模式為超頻模式。Please refer to FIG. 1, which is a block diagram of a memory clock control device according to an embodiment of the present invention. As shown in FIG. 1, the memory
在本例中,記憶體時脈控制裝置100可設置在一電腦設備的主機板上,但本案不限於此。處理器1可為一中央處理單元(Central Processing Unit,CPU)、一圖形處理單元(Graphics Processing Unit,GPU),或是同時整合中央處理單元及圖形處理單元的運算晶片,本案不予以限制。記憶體2可為一同步動態隨機存取記憶體(synchronous dynamic random-access memory,SDRAM),特別可以是一第五代雙倍資料速率同步動態隨機存取記憶體(DDR5 SDRAM)。記憶體2連接於處理器1,用於提供處理器1所需的各種資料。對於不同記憶體而言,其超頻模式及非超頻模式可對應於不同的時脈頻率,具體來說,當一記憶體的時脈頻率被操作在一出廠預設時脈範圍之內,則被視為處於非超頻模式,當一記憶體的時脈頻率被操作在超過上述出廠預設時脈範圍,則被視為處於超頻模式。上述記憶體的出廠預設時脈範圍依各記憶體廠商、記憶體規格而定,然通常來說,越新推出的記憶體具有越高的出廠預設時脈範圍。特別來說,記憶體2可以是出廠預設未開放超頻模式的非超頻記憶體。以第五代雙倍資料速率同步動態隨機存取記憶體為例,記憶體2在非超頻模式下的基礎時脈頻率可達4400百萬赫茲(MHz),或者,其每秒可進行4400百萬次的資料傳輸(MT/s);而記憶體2在超頻模式下的時脈頻率可高於4400百萬赫茲(MHz),或者,其每秒可進行高於4400百萬次的資料傳輸(MT/s)。需要注意的是,對於不同記憶體而言,非超頻模式下的基礎時脈頻率與超頻模式下的時脈頻率之間的分界可以不同。In this example, the memory
輔助輸入輸出晶片3及基本輸入輸出晶片4皆關係到電腦設備中其他硬體及軟體之運作,其中基本輸入輸出晶片4儲存基本輸入輸出系統(Basic Input/Output System,BIOS)之韌體,可透過唯讀記憶體(Read only memory,ROM)晶片實現,且可控制電腦設備的基本運作,如開機程序及開機前自我檢測(Power on self-test,POST)。輔助輸入輸出晶片3可為整合多個通訊連結路徑的晶片,負責連接到其他裝置,如鍵盤、滑鼠、風扇等,且可用於管理多項裝置的電力參數。在本例中,輔助輸入輸出晶片3可透過一通用型輸入輸出腳位(General-purpose input/output,GPIO)連接於記憶體2的一特定腳位(以提供VR_Enabled訊號),且其通用型輸入輸出腳位的電壓用於控制記憶體2的時脈模式為一超頻時脈模式或一非超頻時脈模式。在本例中,輔助輸入輸出晶片3可為一超級輸入輸出(Super I/O)晶片,且可透過儲存在晶片中特定位址(如offset)的預設值來調整通用型輸入輸出腳位的電壓。舉例而言,通用型輸入輸出腳位的一高電位對應於記憶體2的超頻模式,且通用型輸入輸出腳位的一低電位對應於記憶體2的非超頻模式。或者,通用型輸入輸出腳位的一低電位對應於記憶體2的超頻模式,且通用型輸入輸出腳位的一高電位對應於記憶體2的非超頻模式。如前所述,記憶體2特別是出廠預設未開放超頻模式的非超頻記憶體。本實施例的記憶體時脈控制裝置100藉由輔助輸入輸出晶片3的腳位與記憶體2之間的連接,可以透過輔助輸入輸出晶片3控制記憶體2進入非超頻模式,藉此提升記憶體2的運作效能。The auxiliary input/
上述輔助輸入輸出晶片3的腳位的電壓係根據輔助輸入輸出晶片3的預存的一電壓控制資料決定,且輔助輸入輸出晶片3的電壓控制資料可受到基本輸入輸出晶片4調整,此部分於後詳述。如圖1所示,記憶體時脈控制裝置100可更包含一平台路徑控制器5(Platform Controller Hub,PCH),以作為處理器1、輔助輸入輸出晶片3及基本輸入輸出晶片4之間的連接介面。例如,當電腦設備開機時,基本輸入輸出晶片4可透過平台路徑控制器5將一起始訊號傳送至處理器1及輔助輸入輸出晶片3。具體而言,記憶體時脈控制裝置100的基本輸入輸出晶片4與平台路徑控制器5之間可透過序列周邊介面(Serial Peripheral Interface Bus,SPI)進行資料傳輸,輔助輸入輸出晶片3與平台路徑控制器5之間可透過低腳位數匯流排(Low Pin Count,LPC)進行資料傳輸,而處理器1與平台路徑控制器5之間可透過直接媒體介面(Direct Media Interface,DMI)進行資料傳輸。The voltage of the pin of the auxiliary
請參考圖2,圖2係依據本發明一實施例所繪示的記憶體時脈控制方法的流程圖。如圖2所示,本例的記憶體時脈控制方法係透過圖1所示的記憶體時脈控制裝置100執行,步驟S1:以基本輸入輸出晶片受一開機訊號觸發以向輔助輸入輸出晶片發出一起始訊號;步驟S3:以輔助輸入輸出晶片受所述起始訊號觸發以根據預存的一電壓控制資料設定輔助輸入輸出晶片的一腳位的一電壓;而當基本輸入輸出晶片受控產生關聯於該記憶體的一變更時脈指令時,執行步驟S5:以基本輸入輸出晶片根據變更時脈指令調整輔助輸入輸出晶片的電壓控制資料;以及步驟S7:以基本輸入輸出晶片執行重新開機程序,以重新向輔助輸入輸出晶片發出起始訊號(回到步驟S1)。需要注意的是,上述調整前的該電壓控制資料對應的一第一時脈模式為非超頻模式,且調整後的該電壓控制資料對應的一第二時脈模式為超頻模式。Please refer to FIG. 2, which is a flow chart of a memory clock control method according to an embodiment of the present invention. As shown in FIG. 2, the memory clock control method of this embodiment is executed by the memory
在步驟S1中,在電腦設備啟動電源後至基本輸入輸出晶片執行開機程序及開機前自我檢測之前,基本輸入輸出晶片可受開機訊號觸發而向輔助輸入輸出晶片發出一起始訊號。在步驟S3中,當輔助輸入輸出晶片受到基本輸入輸出晶片的起始訊號觸發時,可根據預存的電壓控制資料設定輔助輸入輸出晶片的一腳位的電壓,例如為高電位或低電位,其中所述腳位連接於所述記憶體,且腳位的電壓用於控制記憶體的一時脈模式。也就是說,當電腦設備進行關機時,輔助輸入輸出晶片中可存有對應於最後一次設定的時脈模式的電壓控制資料,據此於下次開機時記憶體的時脈模式可被控制。在步驟S5中,當基本輸入輸出晶片受控產生關聯於所述記憶體的一變更時脈指令時,可根據所述變更時脈指令調整輸入輸出晶片的電壓控制資料,並且於步驟S7中執行重新開機程序,包含系統參數重置,之後,重新執行步驟S1。也就是說,本例的記憶體時脈控制方法在經過步驟S7回到步驟S1後,輔助輸入輸出晶片中的電壓控制資料已經被改變。因此,輔助輸入輸出晶片的連接於記憶體的腳位的電壓於步驟S3中已經被改變,藉此控制記憶體進入超頻模式。In step S1, after the computer device is powered on and before the basic input and output chip executes the boot process and the self-test before booting, the basic input and output chip can be triggered by the boot signal to send a start signal to the auxiliary input and output chip. In step S3, when the auxiliary input and output chip is triggered by the start signal of the basic input and output chip, the voltage of a pin of the auxiliary input and output chip can be set according to the pre-stored voltage control data, for example, to a high potential or a low potential, wherein the pin is connected to the memory, and the voltage of the pin is used to control a clock mode of the memory. That is, when the computer device is shut down, the auxiliary input-output chip may store voltage control data corresponding to the last set clock mode, and the clock mode of the memory may be controlled based on this data when the computer device is turned on next time. In step S5, when the basic input-output chip is controlled to generate a change clock instruction related to the memory, the voltage control data of the input-output chip may be adjusted according to the change clock instruction, and a restart procedure including system parameter reset is executed in step S7, and then step S1 is re-executed. That is, after the memory clock control method of this example returns to step S1 after step S7, the voltage control data in the auxiliary input-output chip has been changed. Therefore, the voltage of the pin of the auxiliary I/O chip connected to the memory has been changed in step S3, thereby controlling the memory to enter the overclocking mode.
請結合圖2參考圖3,圖3係依據本發明另一實施例所繪示的記憶體時脈控制方法的流程圖。如圖2及圖3所示,本例的記憶體時脈控制方法在以輔助輸入輸出晶片受所述起始訊號觸發以根據預存的一電壓控制資料設定輔助輸入輸出晶片的一腳位的一電壓的步驟S3後可執行,步驟S41:以基本輸入輸出晶片接收關聯於所述記憶體的一指定時脈;步驟S42:比較指定時脈與記憶體的一預設時脈是否相同,其中該預設時脈對應於預存的該電壓控制資料;若指定時脈與預設時脈相同,則執行步驟S9:以一處理器取得並執行一作業程式;若指定時脈與預設時脈不同,則執行步驟S43:根據指定時脈產生一變更時脈指令,並執行上述步驟S5。Please refer to FIG. 3 in conjunction with FIG. 2. FIG. 3 is a flow chart of a memory clock control method according to another embodiment of the present invention. As shown in FIG. 2 and FIG. 3, the memory clock control method of this embodiment can be executed after step S3 in which the auxiliary input and output chip is triggered by the start signal to set a voltage of a pin of the auxiliary input and output chip according to a pre-stored voltage control data, step S41: receiving a designated clock associated with the memory with the basic input and output chip; step S42: comparing the designated clock with the basic input and output chip; step S43: comparing the designated clock with the basic input and output chip; step S44: comparing the designated clock with the basic input and output chip; step S45: comparing the designated clock with the basic input and output chip; step S46: comparing the designated clock with the basic input and output chip; step S47: comparing the designated clock with the basic input and output chip; step S48: comparing the designated clock with the basic input and output chip; step S49: comparing the designated clock with the basic input and output chip; step S50: comparing the designated clock with the basic input and output chip; step S51: comparing the designated clock with the basic input and output chip; step S51: comparing the designated clock with the basic input and output chip; step S52: comparing the designated clock with the basic input and output chip; step S53: comparing the designated clock with the basic input and output chip; step S54: comparing the designated clock with the basic input and output chip; step S55: The designated clock is the same as a preset clock in the memory, wherein the preset clock corresponds to the pre-stored voltage control data; if the designated clock is the same as the preset clock, then executing step S9: obtaining and executing an operating program with a processor; if the designated clock is different from the preset clock, then executing step S43: generating a clock change instruction according to the designated clock, and executing the above step S5.
在步驟S41中,在電腦設備的開機過程中,基本輸入輸出晶片可被喚醒並連接於一使用者介面(如基本輸入輸出系統的設定介面),且使用者介面可輸出關聯於記憶體的一指定時脈至基本輸入輸出晶片。在步驟S42中,基本輸入輸出晶片可比較指定時脈與記憶體的預設時脈是否相等,以判斷是否要改變輔助輸入輸出晶片的電壓控制資料。當指定時脈與預設時脈不同時,即於步驟S43中,基本輸入輸出晶片可根據指定時脈產生一變更時脈指令,即所述變更時脈指令包含對應於指定時脈的一第一資料。於一實施態樣中,步驟S42的指定時脈可以是指對應於使用者介面有勾選超頻模式的指令或無勾選超頻模式的指令所對應的資訊。也就是說,步驟S42的判斷指定時脈與預設時脈不同可以是指判斷使用者介面中有勾選超頻模式的指令。進一步,在步驟S5中,基本輸入輸出晶片可根據所述變更時脈指令中對應於指定時脈的該第一資料調整輔助輸入輸出晶片的電壓控制資料。另一方面,當指定時脈與預設時脈相同時(例如當判斷使用者介面中無勾選超頻模式的指令時),基本輸入輸出晶片可控制處理器取得並執行一作業程式,即執行正常的開機程序,其中作業程式係指運行作業系統(Operation System,OS)的程式。需要注意的是,本案的「基本輸入輸出晶片比較指定時脈與預設時脈為彼此不同」的流程,亦相當於「基本輸入輸出晶片未受控產生關聯於該記憶體的該變更時脈指令」的流程。也就是說,在其他實施態樣中,步驟S9亦可被執行為:當基本輸入輸出晶片未受控產生關聯於記憶體的變更時脈指令時,控制處理器取得並執行作業程式。In step S41, during the booting process of the computer device, the BIOS chip can be awakened and connected to a user interface (such as a setting interface of the BIOS), and the user interface can output a specified clock related to the memory to the BIOS chip. In step S42, the BIOS chip can compare whether the specified clock is equal to the default clock of the memory to determine whether to change the voltage control data of the auxiliary BIOS chip. When the specified clock is different from the default clock, in step S43, the BIOS chip can generate a change clock instruction according to the specified clock, that is, the change clock instruction includes a first data corresponding to the specified clock. In one embodiment, the designated clock of step S42 may refer to information corresponding to an instruction in the user interface to check the overclocking mode or an instruction not to check the overclocking mode. In other words, the determination in step S42 that the designated clock is different from the default clock may refer to the determination that there is an instruction in the user interface to check the overclocking mode. Further, in step S5, the basic input-output chip may adjust the voltage control data of the auxiliary input-output chip according to the first data corresponding to the designated clock in the clock change instruction. On the other hand, when the designated clock is the same as the default clock (for example, when it is determined that there is no instruction to check the overclocking mode in the user interface), the BIOS can control the processor to obtain and execute an operating program, that is, to execute a normal boot procedure, wherein the operating program refers to a program that runs the operating system (OS). It should be noted that the process of "the BIOS compares the designated clock and the default clock to be different from each other" in this case is also equivalent to the process of "the BIOS does not generate the change clock instruction associated with the memory under control". That is to say, in other implementations, step S9 can also be executed as: when the BIOS does not generate the change clock instruction associated with the memory under control, the processor is controlled to obtain and execute the operating program.
藉由上述結構,本案所揭示的記憶體時脈控制方法及控制裝置,可透過基本輸入輸出晶片依據使用者最後一次儲存設定的記憶體超頻模式,將對應的電壓控制資料儲存在輔助輸入輸出晶片中,再根據判斷輔助輸入輸出晶片中的電壓控制資料是否改變來決定是否改變輔助輸入輸出晶片的一特定腳位的電壓,且該特定腳位連接於記憶體,藉此調整記憶體運作於非出廠預設的時脈頻率範圍。採用本案的記憶體時脈控制方法及控制裝置的電腦設備在啟動電源到基本輸入輸出晶片開機程序的這段過程中,可自動偵測記憶體是否要進入到超頻模式並進行對應調整。Through the above structure, the memory clock control method and control device disclosed in this case can store the corresponding voltage control data in the auxiliary input and output chip according to the memory overclocking mode last stored and set by the user through the basic input and output chip, and then decide whether to change the voltage of a specific pin of the auxiliary input and output chip based on whether the voltage control data in the auxiliary input and output chip changes, and the specific pin is connected to the memory, thereby adjusting the memory to operate in a clock frequency range that is not preset by the factory. The computer device using the memory clock control method and control device of the present case can automatically detect whether the memory is to enter the overclocking mode and make corresponding adjustments during the process from starting the power supply to the basic input and output chip boot program.
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention is disclosed as above with the aforementioned embodiments, it is not intended to limit the present invention. Any changes and modifications made without departing from the spirit and scope of the present invention are within the scope of patent protection of the present invention. Please refer to the attached patent application for the scope of protection defined by the present invention.
100:記憶體時脈控制裝置100: Memory clock control device
1:處理器1: Processor
2:記憶體2: Memory
3:輔助輸入輸出晶片3: Auxiliary input and output chip
4:基本輸入輸出晶片4: Basic input and output chip
5:平台路徑控制器5: Platform path controller
S1~S9,S41~S43:步驟S1~S9,S41~S43: Steps
圖1係依據本發明一實施例所繪示的記憶體時脈控制裝置的方塊圖。 圖2係依據本發明一實施例所繪示的記憶體時脈控制方法的流程圖。 圖3係依據本發明另一實施例所繪示的記憶體時脈控制方法的流程圖。 FIG1 is a block diagram of a memory clock control device according to an embodiment of the present invention. FIG2 is a flow chart of a memory clock control method according to an embodiment of the present invention. FIG3 is a flow chart of a memory clock control method according to another embodiment of the present invention.
S1~S7:步驟 S1~S7: Steps
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| TW201626683A (en) * | 2014-10-31 | 2016-07-16 | 慧與發展有限責任合夥企業 | Backup power supply support |
| TWM635415U (en) * | 2022-08-17 | 2022-12-11 | 精英電腦股份有限公司 | Memory overclocking unit and components |
| TWI803238B (en) * | 2021-12-29 | 2023-05-21 | 南亞科技股份有限公司 | Optical semiconductor device with integrated dies |
| TWI807947B (en) * | 2022-08-01 | 2023-07-01 | 精英電腦股份有限公司 | Method and device of updating and testing plurality of embedded controllers |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201626683A (en) * | 2014-10-31 | 2016-07-16 | 慧與發展有限責任合夥企業 | Backup power supply support |
| TWI803238B (en) * | 2021-12-29 | 2023-05-21 | 南亞科技股份有限公司 | Optical semiconductor device with integrated dies |
| TWI807947B (en) * | 2022-08-01 | 2023-07-01 | 精英電腦股份有限公司 | Method and device of updating and testing plurality of embedded controllers |
| TWM635415U (en) * | 2022-08-17 | 2022-12-11 | 精英電腦股份有限公司 | Memory overclocking unit and components |
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