TWI861842B - Uv printing method for wafer backside protection - Google Patents
Uv printing method for wafer backside protection Download PDFInfo
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- TWI861842B TWI861842B TW112115801A TW112115801A TWI861842B TW I861842 B TWI861842 B TW I861842B TW 112115801 A TW112115801 A TW 112115801A TW 112115801 A TW112115801 A TW 112115801A TW I861842 B TWI861842 B TW I861842B
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000007639 printing Methods 0.000 title claims abstract description 26
- 230000001681 protective effect Effects 0.000 claims abstract description 48
- 238000005520 cutting process Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 83
- 239000010408 film Substances 0.000 description 38
- 238000012360 testing method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 9
- 238000001723 curing Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000003848 UV Light-Curing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Abstract
Description
本發明係關於一種電子元件製程，尤其是一種提升製程效率且節省材料成本的用於晶圓背面保護之紫外光印刷方法。 The present invention relates to an electronic component manufacturing process, in particular to an ultraviolet printing method for wafer backside protection that improves process efficiency and saves material costs.
隨著電子產品的需求增長，且發展趨勢朝向輕量化及高效能，使電子元件上的線路必須做得更密集，且元件尺寸要更小、更薄，較佳能夠提升電子元件的製程效率。因此，透過一種晶圓級晶片尺寸封裝(Wafer Level Chip Scale Package,WLCSP)技術，係直接在晶圓上進行封裝及測試製程，完成後再分割為數個獨立的電子元件，有別於一般先將晶圓切割為晶粒(Die)，再分別接上引腳、封裝已完成體積較大的晶片。而透過晶圓級晶片尺寸封裝方式，係可以降低製程複雜度，且晶片尺寸僅有晶粒大小仍具有相同積體電路功能，適合應用於小型化且高效的電子產品上。 As the demand for electronic products grows and the development trend is toward lightweight and high performance, the circuits on electronic components must be made denser, and the component size must be smaller and thinner, so that the process efficiency of electronic components can be improved. Therefore, through a wafer-level chip scale packaging (WLCSP) technology, the packaging and testing process is directly performed on the wafer, and then divided into several independent electronic components after completion. This is different from the general method of first cutting the wafer into dies, and then connecting the pins and packaging the completed larger chips. The wafer-level chip scale packaging method can reduce the complexity of the process, and the chip size is only the size of the die and still has the same integrated circuit function, which is suitable for application in miniaturized and efficient electronic products.
上述晶圓級晶片尺寸封裝製程，係在晶圓表面形成電路，及對晶圓的非電路形成面(背面)進行研磨，以降低晶片的重量及體積，由於薄化晶圓的結構強度下降，直接切割晶圓容易導致破裂，因此需要使用背面塗覆(Backside Coating)技術，在晶圓背面形成一保護膜以補強晶圓強度，避免在晶圓切割時發生破片。一種習知的晶圓背面保護方法，係在切割前將特殊的保護膠帶(Tape)直接貼合於晶圓背面，係可以簡化製程、降低晶圓破裂機率及保護晶片，惟，特製膠帶的材料成本高，又，膠帶必須緊密貼合晶圓，專 用的貼膠設備必須由上方加壓膠帶至整個晶圓背面，以確保晶圓與膠帶之間不會殘留空氣，還要避免加壓過程彎折晶圓，因此，貼膠專用設備的技術難度高且價格昂貴。 The wafer-level chip size packaging process mentioned above forms a circuit on the surface of the wafer and grinds the non-circuit forming surface (back side) of the wafer to reduce the weight and volume of the chip. Since the structural strength of the thinned wafer decreases, direct cutting of the wafer is prone to cause cracks. Therefore, backside coating technology is required to form a protective film on the back side of the wafer to reinforce the wafer strength and avoid wafer breakage when the wafer is cut. A known method of protecting the back of a wafer is to directly attach a special protective tape to the back of the wafer before cutting. This can simplify the process, reduce the probability of wafer breakage, and protect the chip. However, the material cost of the special tape is high. In addition, the tape must be tightly attached to the wafer. The dedicated adhesive equipment must pressurize the tape from the top to the entire back of the wafer to ensure that no air is left between the wafer and the tape. It is also necessary to avoid bending the wafer during the pressurization process. Therefore, the technology of the dedicated adhesive equipment is difficult and expensive.
有鑑於此，習知的晶圓背面保護之貼膠方法確實仍有加以改善之必要。 In view of this, the conventional wafer backside protection adhesive bonding method still needs to be improved.
為解決上述問題，本發明的目的是提供一種用於晶圓背面保護之紫外光印刷方法，係可以提升晶圓封裝的製程效率。 In order to solve the above problems, the purpose of the present invention is to provide a UV printing method for wafer backside protection, which can improve the process efficiency of wafer packaging.
本發明的次一目的是提供一種用於晶圓背面保護之紫外光印刷方法，係可以降低生產成本。 The second purpose of the present invention is to provide a UV printing method for wafer backside protection, which can reduce production costs.
本發明的又一目的是提供一種用於晶圓背面保護之紫外光印刷方法，係可以提升產品良率。 Another purpose of the present invention is to provide a UV printing method for protecting the back side of a wafer, which can improve the product yield.
本發明的再一目的是提供一種用於晶圓背面保護之紫外光印刷方法，係可以增加產品耐久度及可靠度。 Another purpose of the present invention is to provide a UV printing method for wafer backside protection, which can increase product durability and reliability.
本發明全文所記載的元件及構件使用「一」或「一個」之量詞，僅是為了方便使用且提供本發明範圍的通常意義；於本發明中應被解讀為包括一個或至少一個，且單一的概念也包括複數的情況，除非其明顯意指其他意思。 The quantifiers "one" or "a" used in the components and parts described throughout the present invention are only for the convenience of use and to provide a general meaning of the scope of the present invention; in the present invention, they should be interpreted as including one or at least one, and the single concept also includes the plural case, unless it is obvious that it means otherwise.
本發明的用於晶圓背面保護之紫外光印刷方法，包含：一噴墨步驟，將一紫外光固化油墨全面覆蓋一晶圓之背面，該紫外光固化油墨的粒徑為80~120奈米，且黏度為8~12毫帕．秒；一固化步驟，以一紫外光照射該紫外光固化油墨，而在該晶圓之背面上形成一保護膜，該保護膜的厚度平均值是25微米，該保護膜的厚度與厚度平均值的偏差值在正負5微米之
內；一硬化步驟，對該晶圓連同該保護膜進行加熱烘烤；及一切割步驟，將該晶圓連同該保護膜分割為數個晶片。
The UV printing method for wafer back protection of the present invention comprises: an inkjet step, in which a UV curable ink is fully covered on the back of a wafer, the particle size of the UV curable ink is 80-120 nanometers, and the viscosity is 8-12 milliPa.s; a curing step, in which a UV curable ink is irradiated with UV light to form a protective film on the back of the wafer, the average thickness of the protective film is 25 microns, and the deviation between the thickness of the protective film and the average thickness is within plus or
據此，本發明的用於晶圓背面保護之紫外光印刷方法，藉由噴墨技術及紫外光照射，係可以快速在晶圓背面形成具有保護作用且能夠提升晶圓強度的保護膜，具有在切割過程中固定該晶圓及避免晶圓破裂的功效；且該保護膜的厚度均勻係可以使晶圓受力平均，且分割後的晶片尺寸一致，係具有降低破片機率及提升製程穩定性的功效；又，該紫外光固化油墨係可以被均勻噴出且密切黏著於晶圓表面，係具有提升保護膜的平整度及結合穩定性的功效，及紫外光固化油墨的材料成本低，且噴墨及紫外光的技術簡單，係可以節省設費及耗材的花費；而且在噴墨及照光的過程中不會直接碰觸晶圓本體，係可以降低損傷晶圓的機率，係具有增加產品良率、提升製程效率及降低生產成本等功效。 According to the invention, the UV printing method for protecting the back side of the wafer can quickly form a protective film on the back side of the wafer by inkjet technology and UV irradiation, which has the effect of fixing the wafer and preventing the wafer from breaking during the cutting process; and the uniform thickness of the protective film can make the force on the wafer even, and the size of the wafer after cutting is consistent, which has the effect of reducing the probability of chip breakage and improving the stability of the process; and the UV Photocurable ink can be sprayed evenly and adheres closely to the surface of the wafer, which has the effect of improving the flatness and bonding stability of the protective film. The material cost of UV-curable ink is low, and the technology of inkjet and UV light is simple, which can save the cost of equipment and consumables. In addition, the wafer body will not be directly touched during the process of inkjet and light exposure, which can reduce the probability of damaging the wafer, and has the effect of increasing product yield, improving process efficiency and reducing production costs.
其中，該噴墨步驟使用一壓電式噴墨列印頭噴塗該紫外光固化油墨，該壓電式噴墨列印頭的噴嘴直徑為30微米。如此，該壓電式噴墨列印頭係可以藉由控制電壓調節墨滴大小，係具有提升提升列印精確度的功效。 The inkjet step uses a piezoelectric inkjet print head to spray the UV-curable ink, and the nozzle diameter of the piezoelectric inkjet print head is 30 microns. In this way, the piezoelectric inkjet print head can adjust the ink droplet size by controlling the voltage, which has the effect of improving the printing accuracy.
其中，該紫外光的波長為360奈米~400奈米，且該紫外光的照射時間為10秒。如此，液態的油墨吸收紫外光能量而發生光致聚合作用，係可以在短時間內凝固，係具有提升保護膜製程效率的功效。 The wavelength of the ultraviolet light is 360 nanometers to 400 nanometers, and the irradiation time of the ultraviolet light is 10 seconds. In this way, the liquid ink absorbs the ultraviolet light energy and undergoes photopolymerization, which can solidify in a short time, and has the effect of improving the efficiency of the protective film process.
其中，該硬化步驟的加熱溫度為135℃，且加熱持續時間為2~3小時。如此，加熱係可以增強該保護膜的結合應力並提升耐高溫及抗濕氣的能力，係具有提升產品可靠度的功效。 The heating temperature of the hardening step is 135°C, and the heating duration is 2 to 3 hours. In this way, heating can enhance the bonding stress of the protective film and improve its resistance to high temperatures and moisture, which has the effect of improving product reliability.
本發明之方法另包含一刻印步驟，在該保護膜表面形成數個標籤，且每一個標籤係對應該晶圓上的其中一個晶片的位置。如此，該標籤內容可以包括產品型號、製造廠名稱及批次號碼等識別資訊，係具有辨識晶片 規格資訊的功效。 The method of the present invention further includes an imprinting step to form a plurality of labels on the surface of the protective film, and each label corresponds to the position of one of the chips on the wafer. In this way, the content of the label can include identification information such as product model, manufacturer name and batch number, which has the function of identifying chip specification information.
S1:噴墨步驟 S1: Inkjet printing step
S2:固化步驟 S2: Curing step
S3:硬化步驟 S3: Hardening step
S4:刻印步驟 S4: Engraving step
S5:切割步驟 S5: Cutting step
W:晶圓 W: Wafer
W1:電路形成面 W1: Circuit forming surface
W2:背面 W2: Back
F:保護膜 F: Protective film
K:紫外光固化油墨 K: UV curing ink
〔第1圖〕本發明較佳實施例之噴墨步驟的動作情形圖。 [Figure 1] A diagram showing the ink jetting step in a preferred embodiment of the present invention.
〔第2圖〕本發明較佳實施例之固化步驟的動作情形圖。 [Figure 2] A diagram showing the curing step of a preferred embodiment of the present invention.
〔第3圖〕本發明較佳實施例之硬化步驟的動作情形圖。 [Figure 3] A diagram showing the action of the hardening step of a preferred embodiment of the present invention.
〔第4圖〕本發明較佳實施例之刻印步驟的動作情形圖。 [Figure 4] A diagram showing the operation of the imprinting step of a preferred embodiment of the present invention.
〔第5圖〕本發明較佳實施例之切割步驟的動作情形圖。 [Figure 5] A diagram showing the cutting step of a preferred embodiment of the present invention.
為讓本發明之上述及其他目的、特徵及優點能更明顯易懂，下文特舉本發明之較佳實施例，並配合所附圖式作詳細說明；此外，在不同圖式中標示相同符號者視為相同，會省略其說明。 In order to make the above and other purposes, features and advantages of the present invention more clearly understood, the following specifically cites the preferred embodiments of the present invention and provides a detailed description in conjunction with the attached drawings; in addition, the same symbols in different drawings are considered the same and their descriptions will be omitted.
請參照第1~3圖所示，其係本發明用於晶圓背面保護之紫外光印刷方法的較佳實施例，係包含一噴墨步驟S1、一固化步驟S2及一硬化步驟S3，用於在一晶圓W上形成一保護膜F。 Please refer to Figures 1 to 3, which are preferred embodiments of the UV printing method for wafer backside protection of the present invention, including an inkjet step S1, a curing step S2 and a hardening step S3, for forming a protective film F on a wafer W.
該晶圓W係圓盤形的半導體晶體，一般做為積體電路的載體基板，該晶圓W的材料可以是矽、氮化鎵或碳化矽，透過微影、蝕刻、薄膜、擴散等製程，係可以在該晶圓W之一電路形成面W1上形成密集且複雜的半導體元件、電極及其迴路，而在該電路形成面W1的反面係該晶圓W之一背面W2。又，積體電路在該電路形成面W1加工成形後，係可以由該背面W2進行研磨，使該晶圓W的厚度降低至約200微米。 The wafer W is a disc-shaped semiconductor crystal, generally used as a carrier substrate for integrated circuits. The material of the wafer W can be silicon, gallium nitride or silicon carbide. Through processes such as lithography, etching, thin film, and diffusion, dense and complex semiconductor components, electrodes and their circuits can be formed on a circuit forming surface W1 of the wafer W. The reverse side of the circuit forming surface W1 is a back side W2 of the wafer W. In addition, after the integrated circuit is formed on the circuit forming surface W1, it can be polished from the back side W2 to reduce the thickness of the wafer W to about 200 microns.
請參照第1圖所示，該噴墨步驟S1，係透過直接噴墨印刷 (Inkjet Printing)技術將一紫外光固化油墨K全面覆蓋該晶圓W之該背面W2。該紫外光固化油墨K的粒徑較佳為80~120奈米，且黏度較佳為8~12毫帕．秒。另外，本實施例可以使用壓電式噴墨列印頭(Piezoelectric Inkjet Print Head)，係藉由控制電壓調節墨滴大小，以提升列印精確度；本實施例所使用之印刷噴嘴的直徑較佳為30微米。 As shown in FIG. 1, the inkjet step S1 is to fully cover the back side W2 of the wafer W with a UV-curable ink K by direct inkjet printing technology. The particle size of the UV-curable ink K is preferably 80-120 nanometers, and the viscosity is preferably 8-12 milliPascals. In addition, the present embodiment can use a piezoelectric inkjet print head, which adjusts the ink droplet size by controlling the voltage to improve the printing accuracy; the diameter of the printing nozzle used in the present embodiment is preferably 30 microns.
請參照第2圖所示，該固化步驟S2，係以紫外光照射該紫外光固化油墨K，使原本為液態的該紫外光固化油墨K吸收紫外光能量後，發生光致聚合作用而凝固形成該保護膜F位於該晶圓W之背面W2上，所形成之該保護膜F的厚度平均值可以是25微米，該保護膜F的厚度均勻性(Thickness Uniformity)較佳為厚度與厚度平均值的偏差值在正負5微米之內。本實施例可以使用發光二極體(LED)發射出波長360奈米~400奈米的紫外光，紫外光照射的時間較佳為10秒。 Please refer to FIG. 2, the curing step S2 is to irradiate the UV curing ink K with UV light, so that the UV curing ink K, which is originally in liquid state, absorbs the UV light energy, undergoes photopolymerization and solidifies to form the protective film F located on the back side W2 of the wafer W. The average thickness of the formed protective film F can be 25 microns, and the thickness uniformity of the protective film F is preferably within plus or minus 5 microns of the deviation between the thickness and the average thickness. In this embodiment, a light emitting diode (LED) can be used to emit UV light with a wavelength of 360 nm to 400 nm, and the UV light irradiation time is preferably 10 seconds.
請參照第3圖所示，該硬化步驟S3，係將該晶圓W連同該保護膜F送進硬化爐(Curing Oven)進行加熱烘烤，以增強該保護膜F的結合應力並提升耐高溫及抗濕氣的能力。在本實施例中，加熱溫度為135℃，且加熱持續時間較佳為2~3小時。 Please refer to FIG. 3, the curing step S3 is to send the wafer W together with the protective film F into a curing oven for heating and baking to enhance the bonding stress of the protective film F and improve the ability to resist high temperature and moisture. In this embodiment, the heating temperature is 135°C, and the heating duration is preferably 2 to 3 hours.
請參照第4及5圖所示，該保護膜F在接受固化及硬化處理後，還可以執行一刻印步驟S4及一切割步驟S5。如第4圖所示，該刻印步驟S4係在該保護膜F表面形成數個標籤，且每一個標籤係對應一個晶片的位置，該標籤內容可以包括產品型號、製造廠名稱及批次號碼等識別資訊，該保護膜F的厚度均勻性良好，係可以使該標籤內容清晰而容易被辨識，本實施例係使用雷射刻印機在該保護膜F上刻印文字或條碼圖案；如第5圖所示，該切割步驟S5係將該晶圓W連同該保護膜F分割為數個晶片，該保護膜F係可以固定該晶圓W並提升該晶圓W的強度，係具有在切割過程中避免該 晶圓W破裂的作用。 Please refer to FIGS. 4 and 5 , after the protective film F is cured and hardened, a marking step S4 and a cutting step S5 can be performed. As shown in FIG. 4, the imprinting step S4 is to form several labels on the surface of the protective film F, and each label corresponds to the position of a chip. The content of the label may include identification information such as product model, manufacturer name and batch number. The thickness uniformity of the protective film F is good, which can make the content of the label clear and easy to identify. In this embodiment, a laser engraver is used to engrave text or barcode patterns on the protective film F; as shown in FIG. 5, the cutting step S5 is to divide the wafer W together with the protective film F into several chips. The protective film F can fix the wafer W and enhance the strength of the wafer W, and has the function of preventing the wafer W from breaking during the cutting process.
依據本發明的紫外光印刷方法所形成的該保護膜F係穩固結合於該晶圓W之背面W2，該保護膜F的厚度均勻且具有耐高溫、防潮及遮光等特性，該保護膜F係可以保護及補強該晶圓W，避免該晶圓W發生破裂及該電路形成面W1上的迴路受損。為證實本發明之紫外光印刷方法所形成之保護膜F能夠緊密附著且有效保護該晶圓W，係透過以下可靠度測試進行驗證。 The protective film F formed by the UV printing method of the present invention is firmly bonded to the back side W2 of the wafer W. The protective film F has a uniform thickness and has the characteristics of high temperature resistance, moisture resistance and light shielding. The protective film F can protect and reinforce the wafer W to prevent the wafer W from cracking and the circuit on the circuit forming surface W1 from being damaged. In order to verify that the protective film F formed by the UV printing method of the present invention can be tightly attached and effectively protect the wafer W, the following reliability test is used for verification.
測試一：濕度敏感等級(Moisture Sensitivity Level,MSL)測試，濕敏等級區分之等級一的測試條件係將待測試的該保護膜F連同該晶圓W(以下簡稱樣品)在85℃且相對濕度85%的狀態放置168小時，並比對樣品在測試前後的電性測量、外觀檢查及超音波檢驗的結果，以確認測試後是否發生電性不良、脫層、裂痕或爆裂等失效模式。
Test 1: Moisture Sensitivity Level (MSL) test. The test conditions of
測試二：溫濕度(Temperature with Humidity)測試，PCT測試條件係將樣品在121℃、相對濕度100%且絕對壓力29.7psi的狀態放置168小時，同時施加電壓以檢測是否出現電腐蝕、漏電、介面接合不良等失效模式。 Test 2: Temperature and Humidity test. The PCT test conditions are to place the sample at 121°C, 100% relative humidity and 29.7 psi absolute pressure for 168 hours, while applying voltage to detect failure modes such as electrical corrosion, leakage, and poor interface bonding.
測試三：溫度循環(Thermal Cycling)測試，係將樣品放置在反復升降溫的環境，例如：先升溫至85℃、回復常溫25℃、降溫至-40℃回復常溫，並以每分鐘5~15。℃的溫度變化率進行，使升、降溫的區間約為10分鐘，重複進行1000個循環，檢測樣品在測試過程中是否出現熱膨脹係數變異過大或電性異常等失效模式。 Test 3: Thermal Cycling test is to place the sample in a repeated heating and cooling environment, for example: first heating to 85℃, returning to room temperature 25℃, cooling to -40℃ and returning to room temperature, and the temperature change rate is 5~15℃ per minute, so that the heating and cooling interval is about 10 minutes, and repeated 1000 cycles to detect whether the sample has failure modes such as excessive thermal expansion coefficient variation or electrical abnormalities during the test process.
測試四：回焊(Reflow)測試，係使樣品在回焊爐中經過預熱、吸熱、回焊及冷卻的溫度曲線變化，其中，溫度曲線的最高溫為270℃，溫度曲線變化週期約6分鐘，共進行5次溫度曲線變化，藉由快速的升降溫變化， 檢測樣品是否出現電性不良、脫層、裂痕或爆裂等失效模式。 Test 4: Reflow test, which is to make the sample undergo a temperature curve change of preheating, heat absorption, reflow and cooling in the reflow furnace. The highest temperature of the temperature curve is 270℃, the temperature curve change cycle is about 6 minutes, and a total of 5 temperature curve changes are performed. Through rapid temperature changes, the sample is tested for failure modes such as poor electrical properties, delamination, cracks or bursts.
本發明的用於晶圓背面保護之紫外光印刷方法所形成的保護膜F與晶圓W的結合，係能夠通過上述測試一~四的可靠度檢驗，證實該保護膜F除了可以補強晶圓W強度以避免該晶圓W在切割時破裂，該保護膜F還可以持續緊密貼合在分割後的晶片上，即使在高溫、潮濕且長時間使用(通電)的狀況下，該保護膜F仍能夠提供該晶圓W穩定的保護作用，且在該晶圓W與該保護膜F的介面不會發生侵蝕、短路、分離等不良情形。
The combination of the protective film F formed by the UV printing method for wafer back protection of the present invention and the wafer W can pass the reliability tests of the
另外，本發明的用於晶圓背面保護之紫外光印刷方法，在相同的噴墨速度條件下，生產的速度與該晶圓W的面積有關，在本實施例中，每小時可以在120片12吋晶圓上形成厚度25微米的保護膜F，若是8吋晶圓則可以提升至每小時180片，相較於習知的貼膠方法每小時僅能夠處理60片晶圓，而本發明之印刷方法不需要對晶圓W做預熱處理，且噴墨後僅需要10秒照射紫外光以固化為保護膜F，因此，本發明的用於晶圓背面保護之紫外光印刷方法係具有提升晶圓生產效率的作用。 In addition, the UV printing method for wafer back protection of the present invention, under the same ink jetting speed condition, the production speed is related to the area of the wafer W. In this embodiment, a protective film F with a thickness of 25 microns can be formed on 120 12-inch wafers per hour, and if it is an 8-inch wafer, it can be increased to 180 per hour. Compared with the known adhesive laminating method, which can only process 60 wafers per hour, the printing method of the present invention does not require preheating of the wafer W, and only needs 10 seconds of UV irradiation after ink jetting to solidify the protective film F. Therefore, the UV printing method for wafer back protection of the present invention has the effect of improving wafer production efficiency.
綜上所述，本發明的用於晶圓背面保護之紫外光印刷方法，藉由噴墨技術及紫外光照射，係可以快速在晶圓背面形成具有保護作用且能夠提升晶圓強度的保護膜；又，紫外光固化油墨的材料成本低，且噴墨及紫外光的技術簡單，係可以節省設費及耗材的花費；而且在噴墨及照光的過程中不會直接碰觸晶圓本體，係可以降低損傷晶圓的機率，係具有增加產品良率、提升製程效率及降低生產成本等功效。 In summary, the UV printing method for wafer back protection of the present invention can quickly form a protective film on the back of the wafer that has a protective effect and can enhance the strength of the wafer through inkjet technology and UV irradiation; in addition, the material cost of UV curable ink is low, and the inkjet and UV technology are simple, which can save equipment costs and consumables; and the wafer body will not be directly touched during the inkjet and irradiation process, which can reduce the probability of damaging the wafer, and has the effects of increasing product yield, improving process efficiency and reducing production costs.
雖然本發明已利用上述較佳實施例揭示，然其並非用以限定本發明，任何熟習此技藝者在不脫離本發明之精神和範圍之內，相對上述實施例進行各種更動與修改仍屬本發明所保護之技術範疇，因此本發明之保護範圍當包含後附之申請專利範圍所記載的文義及均等範圍內之所有變更。 Although the present invention has been disclosed using the above preferred embodiments, they are not intended to limit the present invention. Any person skilled in the art may make various changes and modifications to the above embodiments within the spirit and scope of the present invention, and the changes and modifications are still within the technical scope protected by the present invention. Therefore, the protection scope of the present invention shall include all changes within the meaning and equivalent scope recorded in the attached patent application scope.
S2:固化步驟 S2: Curing step
W:晶圓 W: Wafer
W1:電路形成面 W1: Circuit forming surface
W2:背面 W2: Back
F:保護膜 F: Protective film
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| US20090155984A1 (en) * | 2007-12-12 | 2009-06-18 | Kim Won-Keun | Backside protection film, method of forming the same and method of manufacturing a semiconductor package using the same |
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