TWI861025B - Substrate processing device, substrate processing method and computer-readable recording medium - Google Patents

Abstract

[Topic] The present invention discloses a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium capable of supplying ozone water of a stable ozone concentration to a substrate. [Solution] The substrate processing apparatus comprises an ozone gas supply unit configured to supply ozone gas, a conditioning liquid supply unit configured to supply a conditioning liquid indicating a specific hydrogen ion concentration, a dissolving unit configured to dissolve ozone gas in the conditioning liquid to generate ozone water, at least one processing chamber configured to perform a cleaning process on a substrate using ozone water, and a liquid supply unit that supplies ozone water from the dissolving unit to at least one processing chamber via a liquid supply pipe.

Description

Substrate processing device, substrate processing method and computer-readable recording medium

The present invention relates to a substrate processing device, a substrate processing method and a computer-readable recording medium.

Patent document 1 discloses a substrate processing device that removes attachments (e.g., photoresist film, contaminants, oxide film, etc.) attached to a substrate by supplying high-concentration ozone water to the substrate. [Prior art document] [Patent document]

[Patent Document 1] Japanese Patent Application Publication No. 2008-311256

[The problem that the invention wants to solve]

It is well known that the ozone concentration of high-concentration ozone water decays in a short time. Therefore, the present disclosure discloses a substrate processing device, a substrate processing method, and a computer-readable recording medium capable of supplying ozone water with a stable ozone concentration to a substrate. [Means for Solving the Problem]

The substrate processing device according to one aspect of the present disclosure comprises: an ozone gas supply unit configured to supply ozone gas; a conditioning liquid supply unit configured to supply a conditioning liquid indicating a specific hydrogen ion concentration; a dissolving unit configured to dissolve ozone gas in the conditioning liquid to generate ozone water; at least one processing chamber configured to perform a cleaning process on a substrate using ozone water; and a liquid delivery unit configured to deliver ozone water from the dissolving unit to at least one processing chamber via a liquid delivery pipe. [Effect of the invention]

By using the substrate processing, substrate processing method and computer-readable recording medium disclosed herein, ozone water with a stable ozone concentration can be supplied to the substrate.

Hereinafter, an example of an embodiment of the present disclosure will be described in detail with reference to the drawings. In the following description, the same symbols are used for elements having the same elements or the same functions, and repeated descriptions are omitted.

[Structure of substrate processing system] Figure 1 is a diagram showing the schematic structure of the substrate processing system involved in this embodiment. In the following, in order to make the positional relationship clear, the X-axis, Y-axis and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is set to be the vertical upward direction.

1, a substrate processing system 1 includes a loading/unloading station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are adjacently installed.

The loading/unloading station 2 includes a carrier loading unit 11 and a transport unit 12. A plurality of carriers C are loaded on the carrier loading unit 11. The plurality of carriers C accommodate a plurality of substrates in a horizontal state. In the present embodiment, the plurality of substrates are semiconductor wafers (hereinafter referred to as wafers W).

The transport unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transport device 13 and a receiving unit 14 therein. The substrate transport device 13 includes a wafer holding mechanism for holding a wafer W. The substrate transport device 13 can move in the horizontal and vertical directions and rotate around a vertical axis, and transports the wafer W between the carrier C and the receiving unit 14 using the wafer holding mechanism.

The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16. The plurality of processing units 16 are provided in parallel on both sides of the transport section 15.

The transport unit 15 has a substrate transport device 17 therein. The substrate transport device 17 has a wafer holding mechanism for holding the wafer W. The substrate transport device 17 can move in the horizontal and vertical directions and rotate around the vertical axis, and transports the wafer W between the receiving unit 14 and the processing unit 16 using the wafer holding mechanism.

The processing unit 16 performs specific substrate processing on the wafer W transferred by the substrate transfer device 17 .

Furthermore, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a memory unit 19. The memory unit 19 stores programs for controlling various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the memory unit 19.

Furthermore, such a program may be recorded in a computer-readable storage medium, and may be installed from the storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

In the substrate processing system 1 configured as described above, first, the substrate transport device 13 of the loading/unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement portion 11, and places the taken-out wafer W on the receiving portion 14. The wafer W placed on the receiving portion 14 is taken out from the receiving portion 14 by the substrate transport device 17 of the processing station 3, and is carried into the processing unit 16.

After the wafer W is carried into the processing unit 16 and processed by the processing unit 16, it is carried out from the processing unit 16 by the substrate transport device 17 and placed in the receiving and receiving unit 14. Then, the processed wafer W placed in the receiving and receiving unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transport device 13.

[Construction of substrate processing device] Next, referring to FIG. 2 to FIG. 4 , the construction of the substrate processing device 10 included in the substrate processing system 1 is described. The substrate processing device 10 has a function of supplying ozone water to the wafer W and removing the attached matter attached to the surface of the wafer W.

The wafer W may be in the shape of a circular plate or a plate other than a circular shape such as a polygon. The wafer W may have a notch portion with a partial notch. The notch portion may be, for example, a groove (a U-shaped or V-shaped groove) or a straight line portion (the so-called oriented plane) extending in a straight line. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate or other various substrates. The diameter of the wafer W may be, for example, about 200 mm to 450 mm. Specific examples of the film F include, for example, a TiN film, an Al film, a tungsten film, a SiN film, a _SiO2 film, a polysilicon film, a thermal oxide film (Th-Ox), and the like.

As shown in FIG. 2 , the substrate processing apparatus 10 includes a plurality of processing units 16, an ozone water supply unit 100, an alkaline solution supply unit 200, a rinse liquid supply unit 300, a liquid discharge unit 400, an exhaust unit 500, and a control device 4 (control unit 18).

[Processing unit] The processing unit 16 includes a processing chamber 16a, a rotating holding unit 16b, and nozzles N1 and N2. The processing chamber 16a is configured to be able to take out and put in a wafer W via a gate valve (not shown). The rotating holding unit 16b is configured to hold the wafer W and rotate, and is arranged in the processing chamber 16a.

The nozzles N1 and N2 are arranged in the processing chamber 16a so as to be located above the wafer W when the wafer W is held by the rotation holding portion 16b. Ozone water is ejected from the nozzle N1. Rinse liquid is ejected from the nozzle N2. In addition, although three processing units 16 (16A to 16C) are arranged as an example in FIG. 2, the number of processing units 16 is not particularly limited. That is, the substrate processing device 10 may have at least one processing unit 16.

[Ozone water supply unit] The ozone water supply unit 100 has the function of generating ozone water and supplying the generated ozone water to the wafer W through the nozzle N1. The ozone water supply unit 100 includes an ozone gas supply unit 110, a conditioning liquid supply unit 120, a dissolving unit 130, and a liquid supply unit 140.

The ozone gas supply unit 110 is configured to generate ozone gas from oxygen. The ozone gas supply unit 110 is connected to the dissolution unit 130 via the pipe D1, and supplies the generated ozone gas to the dissolution unit 130. The adjustment liquid supply unit 120 includes liquid sources 121, 122, a circulation tank 123, a pump 124, a heater 125, a hydrogen ion concentration monitor 126, and valves V1 to V3.

The liquid source 121 is configured to store an acidic solution. The acidic solution may be a solution of an organic acid (e.g., citric acid, acetic acid, carbonic acid), a solution of an inorganic acid (e.g., hydrochloric acid, nitric acid), or a solution of a mixture of an organic acid and an inorganic acid. When an acidic solution composed of a mixture of an organic acid and an inorganic acid (e.g., hydrochloric acid) is used, the solubility of the anti-corrosion agent becomes higher. The liquid source 121 is connected to the circulation tank 123 via the pipe D2, and the acidic solution is supplied to the circulation tank 123.

The liquid source 122 is configured as stored water (e.g., pure water, DIW (Deionized Water)). The liquid source 122 is connected to the circulation tank 123 via the pipes D2 and D3 to supply water to the circulation tank 123. The pipe D3 is connected to the middle of the pipe D2. Therefore, at the confluence of the pipes D2 and D3, the acidic solution and water are mixed to generate a conditioned liquid. The conditioned liquid is adjusted to represent a specific hydrogen ion concentration. The hydrogen ion concentration of the conditioned liquid may be adjusted based on, for example, the flow rate and concentration of the acidic solution supplied from the liquid source 121, and the flow rate of water supplied from the liquid source 122. The hydrogen ion concentration of the conditioned liquid may be, for example, in the range of pH 1 to pH 4.

The circulation tank 123 is configured to temporarily store the conditioning liquid while circulating the conditioning liquid through the pipe D4. The conditioning liquid circulates through the circulation tank 123 and the pipe D4, and during the circulation process, water and the acid solution can be fully and evenly mixed.

The pipe D4 connects the lower part and the upper part of the circulation tank 123. The pump 124, the heater 125, the hydrogen ion concentration monitor 126, and the valve V3 are connected to the pipe D4 in order from the upstream side. The pump 124 is configured to operate according to the control signal from the control device 4, and delivers the conditioning liquid in the circulation tank 123 to the downstream side through the pipe D4. The heater 125 is configured to operate according to the control signal from the control device 4, and heats the conditioning liquid in a manner that the conditioning liquid becomes a specific temperature (for example, about 22°C to 85°C).

The hydrogen ion concentration monitor 126 is configured to obtain data on the hydrogen ion concentration of the conditioning liquid flowing in the pipe D4. The data obtained by the hydrogen ion concentration monitor 126 is sent to the control device 4.

Valves V1 to V3 are respectively provided in the middle of pipes D2 to D4. Valve V1 is configured to operate according to a control signal from control device 4 to control the flow rate of the acid solution flowing in pipe D2. Valve V2 is configured to operate according to a control signal from control device 4 to control the flow rate of water flowing in pipe D3.

The valve V3 is configured to operate according to a control signal from the control device 4, and can switch between a flow path in which the conditioning liquid circulates in the pipe D4 and the circulation tank 123, and a flow path in which the conditioning liquid is discharged from the circulation tank 123 through the pipes D4 and D5 to the dissolving part 130. The valve V3 may be, for example, a three-way solenoid valve (solenoid valve). The pipe D5 connects the valve V3 and the dissolving part 130.

The dissolving section 130 is configured to generate ozone water by dissolving the ozone gas supplied from the ozone supply section 110 in the conditioning liquid supplied from the conditioning liquid supply section 120. The dissolving section 130 may be a dissolving module that allows ozone gas to flow through the primary side of a porous membrane and water to flow through the secondary side of the porous membrane to contact gas and liquid and dissolve ozone gas in water.

The liquid supply unit 140 has the function of supplying the ozone water generated in the dissolving unit 130 to each processing unit 16A to 16C or the liquid discharge unit 400. The liquid supply unit 140 includes pipes D6 to D9 (liquid supply pipes), an auxiliary heater 141, a temperature monitor 142, an ozone concentration monitor 143, and valves V4 to V6.

The pipe D6 is extended in a manner connecting the dissolving section 130 and the drain section 400. The auxiliary heater 141, the temperature monitor 142, and the ozone concentration monitor 143 are sequentially connected to the pipe D6 from the upstream side. The auxiliary heater 141 is configured to operate according to a control signal from the control device 4, and heat the ozone water in a manner such that the ozone water reaches a specific temperature (for example, about 22°C to 85°C). The temperature monitor 142 is configured to obtain data on the temperature of the ozone water flowing in the pipe D6. The data obtained by the temperature monitor 142 is sent to the control device 4.

The ozone concentration monitor 143 is configured to obtain data on the ozone concentration of the ozone water flowing in the pipe D6. That is, the ozone concentration monitor 143 obtains data on the ozone concentration of the ozone water downstream of the dissolution section 130. The data obtained by the ozone concentration monitor 143 is sent to the control device 4. The ozone concentration monitor 143 may be set at a position where the path length from the dissolution section 130 to the ozone concentration monitor 143 is approximately equal to the path length from the dissolution section 130 to each processing unit 16A to 16C (to each nozzle N1).

The pipes D7 to D9 are respectively branched from the middle of the pipe D6 and connected to the nozzles N1 of the processing units 16A to 16C. The pipes D7 and D8 respectively include adjustment parts D7a and D8a for ensuring a specific path length. The adjustment parts D7a and D8a may be, for example, partially serpentine pipes D7 and D8, or partially spirally extended pipes D7 and D8. Due to the existence of these adjustment parts D7a and D8a, the path lengths from the dissolution section 130 to the processing units 16A to 16C (to the nozzles N1) may be approximately equal. In addition, the pipe D9 may include an adjustment part.

Valves V4 to V6 are respectively provided in the middle of pipes D7 to D9. Valves V4 to V6 are configured to operate according to control signals from the control device 4, and ozone water flowing through pipes D7 to D9 is mixed with alkaline conditioning liquid supplied from the alkaline solution supply unit 200. Valves V4 to V6 may be, for example, mixing faucets (mixing valves).

[Alkaline solution supply unit] The alkaline solution supply unit 200 has the function of generating an alkaline conditioning solution and supplying the generated alkaline conditioning solution to the wafer W through the nozzle N1. The alkaline solution supply unit 200 includes liquid sources 201, 202, a circulation tank 203, a pump 204, a heater 205, a hydrogen ion concentration monitor 206, and valves V7, V8.

The liquid source 201 is configured to store an alkaline solution. The alkaline solution may be, for example, aqueous ammonia. The liquid source 201 is connected to the circulation tank 203 via the pipe D10, and supplies the alkaline solution to the circulation tank 203.

Liquid source 202 is the same as liquid source 122 and is configured as stored water (e.g., pure water, DIW (Deionized Water)). Liquid source 202 is connected to circulation tank 203 via pipes D10 and D11 to supply water to circulation tank 203. Pipe D11 is connected to the middle of pipe D10. Therefore, at the confluence of pipes D10 and D11, alkaline solution and water are mixed to generate alkaline adjusted liquid. The alkaline adjusted liquid is adjusted to represent a specific hydrogen ion concentration. The hydrogen ion concentration of the adjusted liquid may be adjusted according to, for example, the flow rate and concentration of the alkaline solution supplied from liquid source 201 and the flow rate of water supplied from liquid source 122. The hydrogen ion concentration of the alkaline adjustment solution may be, for example, about pH 9 to pH 13.

The circulation tank 203 is configured to temporarily store the alkaline conditioning solution while circulating the alkaline conditioning solution through the pipe D12. As the alkaline conditioning solution passes through the circulation tank 203 and the pipe D12, water and the alkaline solution can be fully and evenly mixed during the circulation process.

The pipe D12 connects the lower part and the upper part of the circulation tank 203. The pump 204, the heater 205, and the hydrogen ion concentration monitor 206 are connected to the pipe D12 in order from the upstream side. The pump 204 is configured to operate according to the control signal from the control device 4, and to send the conditioning liquid in the circulation tank 203 to the downstream side through the pipe D12. The heater 205 is configured to operate according to the control signal from the control device 4, and to heat the alkaline conditioning liquid in a manner that the alkaline conditioning liquid becomes a specific temperature (for example, about 22°C to 85°C).

The hydrogen ion concentration monitor 206 is configured to obtain data on the hydrogen ion concentration of the alkaline conditioning liquid flowing in the pipe D12. The data obtained by the hydrogen ion concentration monitor 206 is sent to the control device 4.

The pipe D12 is connected to pipes D13 to D15 that branch off from the pipe D12. The pipe D13 that branches off from the pipe D12 is connected to the valve V4. The pipe D14 that branches off from the pipe D12 on the downstream side of the pipe D13 is connected to the valve V5. The pipe D15 that branches off from the pipe D12 on the downstream side of the pipe D14 is connected to the valve V6. Therefore, the alkaline adjustment solution supplied from the alkaline solution supply unit 200 is mixed with the ozone water supplied from the ozone water supply unit 100 in each valve V4 to V6.

Valves V7 and V8 are respectively provided in the middle of pipes D10 and D11. Valve V7 is configured to operate according to a control signal from control device 4 to control the flow rate of alkaline solution flowing in pipe D10. Valve V8 is configured to operate according to a control signal from control device 4 to control the flow rate of water flowing in pipe D11.

[Rinsing liquid supply unit] The rinse liquid supply unit 300 has the function of supplying rinse liquid to the wafer W through the nozzle N2. The rinse liquid supply unit 300 includes a liquid source 301, a pump 302, and valves V9 to V11. The liquid source 301 is configured to store the rinse liquid. The rinse liquid is used to rinse, for example, a chemical solution or an attachment attached to a substrate. Even if the rinse liquid is water (for example, pure water, DIW (Deionized Water)), it is also acceptable. The liquid source 301 extends toward each processing unit 16A to 16C through pipes D16 to D19. Pipes D17 to D19 branch off from the middle of pipe D16 and are connected to the nozzles N2 of each processing unit 16A to 16C. Therefore, the rinse liquid supplied from the liquid source 301 is supplied to the nozzle N2 of each of the processing units 16A to 16C.

The pump 302 is arranged in the middle of the pipe D16. The pump 302 is configured to operate according to the control signal from the control device 4, and to deliver the flushing liquid to the downstream side through the pipe D16. The valves V9 to V11 are respectively arranged in the middle of the pipes D17 to D19. The valves V9 to V11 are respectively configured to operate according to the control signal from the control device 4, and to control the flow rate of the flushing liquid flowing in the pipes D17 to D19.

[Drainage] The drainage section 400 includes a drainage treatment unit 401 and a valve V12. The drainage treatment unit 401 is configured to decompose ozone contained in ozone water into oxygen. The ozone decomposition may be performed using, for example, an ozone decomposition catalyst, activated carbon, etc. The drainage treatment unit 401 is connected to the dissolution section 130 via the pipe D6. Therefore, in the drainage treatment unit 401, ozone water generated in the ozone water supply section 100 but not supplied to the nozzle N1 flows through the pipe D6. The valve V12 is provided in the middle of the pipe D6. The valve V12 is configured to operate according to a control signal from the control device 4 and control the flow rate of the ozone water flowing in the pipe D16.

The drainage processing unit 401 is connected to each processing unit 16A~16C through the pipe D20 that is branched into three. Therefore, in the drainage processing unit 401, the ozone water provided for the cleaning process of the wafer W in each processing unit 16A~16C flows through the pipe D20. The liquid processed by the drainage processing unit 401 is discharged outside the system.

[Exhaust section]

The exhaust section 500 includes an exhaust treatment unit 501 and a pump 502. The exhaust treatment unit 501 is configured to decompose ozone gas into oxygen. The decomposition of ozone can be performed using, for example, an ozone decomposition catalyst, activated carbon, etc. The exhaust treatment unit 501 is connected to each processing unit 16A~16C via a pipe D21 that is branched into three. Therefore, in the exhaust treatment unit 501, ozone gas generated inside when each processing unit 16A~16C performs a cleaning process flows through the pipe D21. The gas processed by the exhaust treatment unit 501 is discharged outside the system.

Pump 502 is installed in the middle of piping D21. Pump 502 is configured to operate according to the control signal from control device 4, and deliver ozone gas to the downstream side through piping D21.

[Control device]

The control device 4 is, as shown in FIG. 3, a hydrogen ion concentration control unit M1, a liquid supply control unit M2, a liquid discharge control unit M3, and an exhaust control unit M4, as a functional structure (functional module) for controlling the substrate processing device 10. These functional modules are formed by the cooperation of the control unit 18 and the memory unit 19 of the control device 4. In addition, the memory unit 19 can store, for example, a program read from the recording medium RM, various data when processing the wafer W (the so-called processing recipe), and setting data input from the operator via an external input device (not shown).

The hydrogen ion concentration control unit M1 may control the conditioning liquid supply unit 120 in such a manner as to adjust the hydrogen ion concentration of the conditioning liquid generated in the conditioning liquid supply unit 120 in response to the ozone concentration obtained by the ozone concentration monitor 143. However, it is well known that the higher the hydrogen ion concentration of the conditioning liquid (the lower the pH), the easier it is for ozone gas to dissolve in the conditioning liquid. Therefore, even when, for example, the ozone concentration obtained by the ozone concentration monitor 143 is lower than a specific value, the hydrogen ion concentration control unit M1 may instruct the valves V1 and V2 to increase the supply amount of the acidic solution from the liquid source 121 and reduce the supply amount of water from the liquid source 122. For example, even when the ozone concentration obtained by the ozone concentration monitor 143 is higher than a specific value, the hydrogen ion concentration control unit M1 instructs valves V1 and V2 to reduce the supply of the acid solution from the liquid source 121 and increase the supply of water from the liquid source 122.

The hydrogen ion concentration control unit M1 may control the alkaline solution supply unit 200 in such a manner as to adjust the hydrogen ion concentration of the alkaline adjustment solution generated in the alkaline solution supply unit 200 in response to the hydrogen ion concentration obtained by the hydrogen ion concentration monitor 206. For example, even when the hydrogen ion concentration obtained by the ozone concentration monitor 143 is higher than a specific value, the hydrogen ion concentration control unit M1 may instruct the valves V7 and V8 to increase the supply amount of the alkaline solution from the liquid source 201 or reduce the supply amount of water from the liquid source 202. For example, even when the hydrogen ion concentration obtained by the hydrogen ion concentration monitor 206 is lower than a specific value, the hydrogen ion concentration control unit M1 may instruct valves V7 and V8 to at least reduce the supply amount of the alkaline solution from the liquid source 201 or increase the supply amount of water from the liquid source 202.

The liquid delivery control unit M2 may control the pump 124 and the valve V3 in a manner of switching the circulation of the adjustment liquid through the circulation tank 123 and the piping D4 and the supply of the adjustment liquid to the dissolving unit 130. The liquid delivery control unit M2 may control the pump 124 and the valves V3 to V6 in a manner of delivering the ozone water generated in the dissolving unit 130 to at least one of the processing units 16A to 16C when the temperature obtained by the temperature monitor 142 is above a specific value, the hydrogen ion concentration obtained by the hydrogen ion concentration monitors 126 and 206 is above a specific value, and when the ozone concentration obtained by the ozone concentration monitor 143 is above a specific value. At this time, the liquid delivery control unit M2 may control valves V3 to V6 in such a manner that the alkaline adjustment liquid generated in the alkaline solution supply unit 200 is mixed with the ozone water. The liquid delivery control unit M2 may control valves V3 to V6 in such a manner that the ozone water is not delivered to the remaining processing units 16A to 16C when the ozone water is delivered to any one of the processing units 16A to 16C. The liquid delivery control unit M2 may control valves V9 to V11 in such a manner that the flushing liquid of the liquid source 301 is delivered to at least one of the processing units 16A to 16C.

The discharge control unit M3 controls the valve V12 to discharge the ozone water outside the system when the ozone water is not delivered to at least one of the processing units 16A to 16C. The discharge control unit M3 may control the valve V12 to discharge the ozone water generated in the dissolving unit 130 outside the system even when the temperature obtained by the temperature monitor 142 is less than a specific value, the hydrogen ion concentration obtained by the hydrogen ion concentration monitors 126 and 206 is less than a specific value, or the ozone concentration obtained by the ozone concentration monitor 143 is less than a specific value. Alternatively, even if the ozone water is not delivered to at least one of the processing units 16A to 16C, the discharge control unit M3 may control the valve V12 to discharge the ozone water to the outside of the system.

The exhaust control unit M4 may control the pump 502 so as to absorb the gas in the processing units 16A to 16C and exhaust it outside the system.

The hardware of the control device 4 is constituted by, for example, one or more control computers. The control device 4 has, for example, a circuit 4A as shown in FIG. 4 as a hardware configuration. The circuit 4A may be constituted by circuit elements (circuitry). Specifically, the circuit 4A has a processor 4B, a memory 4C (memory unit), a storage 4D (memory unit), and an input/output port 4E. The processor 4B cooperates with at least one of the memory 4C and the storage 4D to execute programs and implement the input and output of signals through the input/output port 4E, thereby constituting the above-mentioned functional modules. The input/output port 4E performs signal input and output between the processor 4B, the memory 4C and the storage 4D and the various parts of the substrate processing device 10.

The substrate processing apparatus 10 may include, for example, one control device 4 or a controller group (control unit) composed of a plurality of control devices 4. In the case where the substrate processing apparatus 10 includes a controller group, the above-mentioned functional modules may be implemented by one control device 4 or by a combination of two or more control devices 4. In the case where the control device 4 is composed of a plurality of computers (circuit 4A), the above-mentioned functional modules may be implemented by one computer (circuit 4A) or by a combination of two or more computers (circuit 4A). The control device 4 may include a plurality of processors 4B. In this case, the above-mentioned functional modules may be implemented by one or a plurality of processors 4B.

[Substrate processing method] Next, referring to FIG. 5 , a cleaning method (substrate processing method) for wafer W is described. First, a preparatory process for cleaning wafer W is performed (refer to step S1 ). In the preparatory process, the liquid supply control unit M2 and the liquid discharge control unit M3 control the pump 124 and the valve V12 based on the data input from the hydrogen ion concentration monitor 126 , the temperature monitor 142 , and the ozone concentration monitor 143 .

For example, the liquid supply control unit M2 and the liquid discharge control unit M3 determine whether any of the data obtained by the temperature monitor 142 and the ozone concentration monitor 143 is above a specific value. As a result, if any of the data obtained by the hydrogen ion concentration monitor 126, the temperature monitor 142, and the ozone concentration monitor 143 is below the specific value, the liquid supply control unit M2 closes valves V4 to V6 and the liquid discharge control unit M3 opens valve V12 so that the ozone water is not supplied to the processing units 16A to 16C but discharged to the outside of the system.

Even if the data of the hydrogen ion concentration monitor 126 does not reach the specified value, the hydrogen ion concentration control unit M1 may control the valves V1 and V2 so that the hydrogen ion concentration of the conditioning liquid becomes greater than the specified value. Even if the data of the temperature monitor 142 does not reach the specified value, the control device 4 may control the heater 125 so that the temperature of the conditioning liquid becomes greater than the specified value. Even if the data of the ozone concentration monitor 143 does not reach the specified value, the hydrogen ion concentration control unit M1 may control the valves V1 and V2 so that the ozone concentration of the ozone water becomes greater than the specified value.

In addition, when any of the data obtained by the hydrogen ion concentration monitor 126, the temperature monitor 142, and the ozone concentration monitor 143 is greater than a specific value, the liquid supply control unit M2 and the liquid discharge control unit M3 determine that the wafer W is ready for a cleaning process (the preparation process is completed).

When the preparation process is completed, the wafer W is then transported (see step S2). For example, the control device 4 controls the substrate transport devices 13 and 17 to transport a wafer W in the carrier C to the processing unit 16A. Thus, the wafer W is held by the rotation holding portion 16b in the processing unit 16A.

When the transport process of the wafer W to the processing unit 16A is completed, the ozone water supply process to the processing unit 16A is then performed (refer to step S3). For example, in order to supply the ozone water to the processing unit 16A, the liquid supply control unit M2 opens the valve V4 and closes the valves V5 and V6, and the liquid discharge control unit M3 closes the valve V12. In this way, the ozone water is supplied from the nozzle N1 to the wafer W in the processing unit 16A, and the wafer W is cleaned by the ozone water.

In parallel with the supply of ozone water to the processing unit 16A, a wafer W transfer process is performed (see step S3). For example, the control device 4 controls the substrate transfer devices 13 and 17 to transfer one wafer W in the carrier C to the processing unit 16B. Accordingly, the wafer W is held by the rotation holding portion 16b in the processing unit 16B.

When the supply process of ozone water to the processing unit 16A is completed, the supply process of the rinsing liquid to the processing unit 16A is then performed (refer to step S4). For example, the liquid supply control unit M2 opens the valve V9 and closes the valves V10 and V11 in order to supply the rinsing liquid to the processing unit 16A. In this way, the rinsing liquid is supplied from the nozzle N2 to the wafer W in the processing unit 16A, and the rinsing process of the wafer W is performed according to the rinsing liquid. Even if the wafer W subjected to the rinsing process is returned to the carrier C by, for example, the substrate transport device 13, 17.

In parallel with the supply of the rinse liquid to the processing unit 16A, the supply of ozone water to the processing unit 16B is performed (refer to step S4). For example, the liquid supply control unit M2 opens valve V5 and closes valves V4 and V6, and the liquid discharge control unit M3 closes valve V12 in such a manner that ozone water is supplied to the processing unit 16B. Accordingly, ozone water is supplied from the nozzle N1 to the wafer W in the processing unit 16B, and the wafer W is cleaned by the ozone water. In addition, the supply of ozone water to the processing unit 16B may be performed even after the supply of ozone water to the processing unit 16A is stopped, and may be performed even after the supply of the rinse liquid to the processing unit 16A is started.

In parallel with the supply of the rinse solution to the processing unit 16A, the wafer W is transported (see step S4). For example, the control device 4 controls the substrate transport devices 13 and 17 to transport one wafer W in the carrier C to the processing unit 16C. Thus, the wafer W is held by the rotation holding portion 16b in the processing unit 16C.

When the supply process of ozone water to the processing unit 16B is completed, the supply process of the rinsing liquid to the processing unit 16B is then performed (refer to step S5). For example, the liquid supply control unit M2 opens the valve V10 and closes the valves V9 and V11 in order to supply the rinsing liquid to the processing unit 16B. In this way, the rinsing liquid is supplied from the nozzle N2 to the wafer W in the processing unit 16B, and the rinsing process of the wafer W is performed according to the rinsing liquid. The rinsed wafer W may be returned to the carrier C, for example, by the substrate transport device 13 or 17.

In parallel with the supply of the rinse liquid to the processing unit 16B, the supply of ozone water to the processing unit 16C is performed (refer to step S5). For example, in order to supply ozone water to the processing unit 16C, the liquid supply control unit M2 opens the valve V6 and closes the valves V4 and V5, and the liquid discharge control unit M3 closes the valve V12. In this way, ozone water is supplied from the nozzle N1 to the wafer W of the processing unit 16C, and the wafer W is cleaned by the ozone water. In addition, the supply of ozone water to the processing unit 16C may be performed even after the ozone water in the processing unit 16B is stopped, and may be performed even after the supply of the rinse liquid to the processing unit 16B is started.

When the supply process of ozone water to the processing unit 16C is completed, the supply process of the rinsing liquid to the processing unit 16C is then performed (refer to step S6). For example, the liquid supply control unit M2 opens the valve V11 and closes the valves V9 and V10 in order to supply the rinsing liquid to the processing unit 16C. In this way, the rinsing liquid is supplied from the nozzle N2 to the wafer W in the processing unit 16C, and the rinsing process of the wafer W is performed according to the rinsing liquid. The wafer W that has been rinsed may be returned to the carrier C, for example, by the substrate transport device 13 or 17.

[Function] According to the above example, ozone water is generated in the dissolving section 130 before being supplied to the processing unit 16. Therefore, ozone water is supplied to the processing unit 16 before the ozone concentration of the ozone water is significantly attenuated. Therefore, ozone water with a stable ozone concentration can be supplied to the wafer W.

According to the above example, the hydrogen ion concentration of the conditioning solution generated in the conditioning solution supply unit 120 is adjusted according to the ozone concentration obtained by the ozone concentration monitor 143. Therefore, the ozone concentration of the ozone water can be maintained at an appropriate value.

However, the ozone concentration of the ozone water starts to decay immediately after the dissolution unit 130 generates the ozone water. Therefore, according to the above example, the path length from the dissolution unit 130 to the ozone concentration monitor 143 can be made substantially equal to the path length from the dissolution unit 130 to each of the processing units 16A to 16C. Therefore, the ozone concentration of the ozone water when it is supplied to each of the processing units 16A to 16C can be indirectly obtained by the ozone concentration monitor 143. Therefore, the cleaning process of the wafer W using the ozone water can be performed with better accuracy.

According to the above example, the path lengths from the dissolution section 130 to each processing unit 16A to 16C can be set to be approximately equal. Therefore, the attenuation of the ozone concentration from the dissolution section 130 to each processing unit 16A to 16C becomes approximately equal. Therefore, even if the wafer W is cleaned in any processing unit 16, a uniform cleaning result can be obtained.

According to the above example, the conditioning liquid supply unit is configured to circulate the conditioning liquid. Therefore, during the circulation of the conditioning liquid, water and the acid solution are fully and evenly mixed. Therefore, in the dissolving unit 130, the ozone gas can be stably dissolved in the conditioning liquid.

In the above example, the alkaline solution supply unit 200 can supply the alkaline conditioning solution to the pipes D7 to D9 via valves V4 to V6. In this case, the alkaline solution that reduces the solubility of the ozone gas in the conditioning solution is mixed with the ozone water after the ozone water is generated. Therefore, it is possible to suppress the decrease in the ozone concentration of the ozone water while removing the attached matter attached to the wafer W by the alkaline component.

In the above example, if any of the data obtained by the hydrogen ion concentration monitor 126, the temperature monitor 142, and the ozone concentration monitor 143 is above a specific value, the liquid supply control unit M2 and the liquid discharge control unit M3 can control the pump 124 and the valves V3 to V6 in such a way that the ozone water generated in the dissolution unit 130 is supplied to at least one of the processing units 16A to 16C. In this case, the ozone concentration of the ozone water supplied to the processing unit 16 is stably maintained above a specific value. Therefore, a uniform cleaning result can be obtained.

In the above example, if the supply of ozone water to the processing unit 16B is performed after the supply of ozone water to the processing unit 16A is stopped, the supply of ozone water to the processing unit 16C can be performed after the supply of ozone water to the processing unit 16B is stopped. That is, in the case where ozone water is supplied to any one of the processing units 16A to 16C, ozone water is not supplied to the remaining processing units 16A to 16C. In this case, the cleaning process of the wafer W by ozone water is not performed simultaneously in each processing unit 16A to 16C. Therefore, ozone water with a stable ozone concentration is supplied to each processing unit 16A to 16C. Therefore, even if the wafer W is cleaned in any of the processing units 16A to 16C, a uniform cleaning result can be obtained.

In the above example, the discharge control unit M3 can control the valve V12 to discharge the ozone water to the outside of the system when the ozone water is not delivered to at least one of the processing units 16A to 16C. In this case, since the ozone water is difficult to be retained in the pipes D6 to D9 (delivery pipes), the ozone concentration of the ozone water can be more stabilized.

[Variations] Although the embodiments of the present disclosure have been described in detail above, various modifications may be added to the embodiments without departing from the scope of the patent application and its intent.

(1) As shown in FIG. 6 , the conditioning liquid supply section 120 does not include the circulation tank 123 or the like, and the conditioning liquid in which the acidic solution from the liquid source 121 and the water from the liquid source 122 are mixed is not circulated but directly supplied to the dissolving section 130. In this case, the liquid sources 121 and 122 are connected to the valve V13 via the pipes D2 and D3, respectively. The valve V1 is provided in the pipe D2. The valve V2 and the heater 125 are provided in the pipe D3 in order from the upstream side. The valve V13 is configured to operate according to the control signal from the control device 4, and mix the acidic solution flowing in the pipe D2 and the water flowing in the pipe D3. The valve V13 may be, for example, a mixing faucet (mixing valve).

(2) The dissolution section 130 may be a plurality of dissolution modules connected in series. In this case, the ozone gas that is not dissolved in the conditioning liquid in the dissolution module on the upstream side can be supplied to the dissolution module on the downstream side and further dissolved in the conditioning liquid. Therefore, ozone water with a higher ozone concentration can be generated. The dissolution section 130 may be a plurality of dissolution modules connected in parallel. In this case, the flow rate of ozone water generated by the dissolution module can be increased.

(3) The higher the temperature of the ozone water, the higher the reactivity between ozone and the attachments attached to the surface of the wafer W tends to be. In addition, the ozone dissolved in the ozone water tends to diffuse as a gas, causing the ozone concentration of the ozone water to decrease. Therefore, even if the processing unit 16 further includes a heating source that is configured to heat the ozone water ejected from the nozzle N1 directly above the wafer W. In this case, since the temperature of the ozone water is relatively low before it is ejected toward the wafer W, high-concentration ozone water can be supplied to the wafer W. Furthermore, by heating the ozone water ejected from the nozzle N1 directly above the wafer W, the diffusion of ozone gas from the ozone water can be minimized, and the reactivity of ozone to the attachments on the wafer W can be improved. Therefore, the attached matter attached to the wafer W can be removed very effectively.

The heating source may be a heater that heats the wafer W from the back side, or a heating fluid supply mechanism that sprays high-temperature hot water or steam to the back side of the wafer W. In these cases, the wafer W may be held by suction on the rotating holding portion 16 b in the processing unit 16, or the periphery of the wafer W may be held physically (so-called mechanical clamp).

Even if the heat source is a heated object heated by electromagnetic induction, for example, in this case, the wafer W is supported by the heated object in the processing unit 16.

The heating source may be, for example, a heater configured to rapidly increase the temperature of the ozone water before being supplied to the nozzle N1.

The processing unit 16 may be a batch type chamber that processes a plurality of wafers W simultaneously in one processing tank. In this case, the heating source may be a heater configured to rapidly increase the temperature of the ozone water before being supplied to the processing tank.

(4) The processing unit 16 may further include an irradiation unit configured to irradiate ultraviolet energy rays. The control device 4 may control the irradiation unit so as to irradiate the energy rays to the wafer W during the cleaning process of the wafer W using ozone water. In this case, the attached matter attached to the surface of the wafer W can be removed more effectively.

(5) Even if the cleaning process of the wafer W is not being performed in all the processing units 16 (when a specific time has passed after the cleaning process is completed), the generation of ozone water in the ozone water supply unit 100 may be stopped, instead of draining the ozone water to the outside of the system through the drain unit 400.

[Example] Example 1. A substrate processing device according to one example of the present disclosure includes an ozone gas supply unit configured to supply ozone gas, a conditioning liquid supply unit configured to supply a conditioning liquid indicating a specific hydrogen ion concentration, a dissolving unit configured to dissolve ozone gas in the conditioning liquid to generate ozone water, at least one processing chamber configured to perform a cleaning process on a substrate using ozone water, and a liquid supply unit that supplies ozone water from the dissolving unit to at least one processing chamber through a liquid supply pipe. In this case, ozone water is generated in the dissolving unit before ozone water is supplied to the processing chamber. Therefore, ozone water is supplied to the processing chamber before the ozone concentration of the ozone water is significantly attenuated. Therefore, ozone water with a stable ozone concentration can be supplied to the substrate.

Example 2. Even if the device of Example 1 is connected to a liquid delivery pipe, a liquid discharge section configured to discharge ozone water to the outside of the system may be further provided. In this case, ozone water is continuously generated in the dissolving section, and the ozone water can be discharged from the liquid discharge section without performing a cleaning process of the substrate with ozone water. Therefore, since ozone water is less likely to remain in the liquid delivery pipe, the ozone concentration of the ozone water can be more stabilized.

Example 3. Even if the device of Example 1 or Example 2 is installed in the liquid feeding pipe, an ozone concentration monitor configured to obtain the ozone concentration of the ozone water on the downstream side of the dissolving section may be further provided.

Example 4. Even if the device of Example 3 is further equipped with a control unit for controlling the processing of the adjustment liquid supply unit by adjusting the hydrogen ion concentration of the adjustment liquid generated in the adjustment liquid supply unit in response to the ozone concentration obtained by the ozone concentration monitor. However, there is a tendency that the higher the hydrogen ion concentration of the adjustment liquid (the lower the pH), the easier it is for ozone gas to dissolve in the adjustment liquid, and the lower the hydrogen ion concentration of the adjustment liquid (the higher the pH), the more difficult it is for ozone gas to dissolve in the adjustment liquid. Therefore, by performing feedback control in a manner of adjusting the hydrogen ion concentration of the adjustment liquid in response to the ozone concentration obtained by the ozone concentration monitor, the ozone concentration of the ozone water can be maintained at an appropriate value.

Example 5. In the apparatus of Example 3 or Example 4, the path length of the liquid delivery pipe from the dissolution section to the ozone concentration monitor may be approximately equal to the path length of the liquid delivery pipe from the dissolution section to at least one processing chamber. The ozone concentration of the ozone water begins to decay immediately after the ozone water is generated in the dissolution section. Therefore, by setting the ozone concentration monitor at a position equal to the path length of the liquid delivery pipe from the dissolution section to at least one processing chamber, the ozone concentration of the ozone water when it is supplied to at least one processing chamber can be indirectly obtained. Therefore, the cleaning process of the substrate using ozone water can be performed with better accuracy.

Example 6. In any of the apparatuses of Examples 1 to 5, at least one processing chamber includes a first processing chamber and a second processing chamber configured to perform a cleaning process on a substrate by using ozone water, and the liquid supply pipe diverges and extends from the dissolution section toward each of the first processing chamber and the second processing chamber, and the path length from the dissolution section to the first processing chamber in the liquid supply pipe and the path length from the dissolution section to the second processing chamber in the liquid supply pipe may be substantially equal. In this case, the attenuation amount of ozone concentration from the dissolution section to the first processing chamber by the ozone water is substantially equal to the attenuation amount of ozone concentration from the dissolution section to the second processing chamber by the ozone water. Therefore, even if the substrate is cleaned in either the first or second processing chamber, a uniform cleaning result can be obtained.

Example 7. In any of the devices in Examples 1 to 6, the conditioning liquid supply portion may be configured to mix water and an acidic solution to generate the conditioning liquid.

Example 8. In the apparatus of Example 7, the conditioning liquid supply section may be configured to circulate the conditioning liquid. In this case, water and the acid solution are sufficiently and uniformly mixed during the circulation of the conditioning liquid. Therefore, the ozone gas can be stably dissolved in the conditioning liquid in the dissolving section.

Example 9. Any of the devices in Examples 1 to 8 may further include an alkaline solution supply unit configured to supply an alkaline solution to the liquid delivery pipe. In this case, an alkaline solution that reduces the solubility of ozone gas in the adjustment liquid is mixed with the ozone water after the ozone water is generated. Therefore, while suppressing the decrease in the ozone concentration of the ozone water, it is possible to remove the attached matter attached to the substrate by the alkaline component.

Example 10. Even if any of the devices in Examples 1 to 9 further includes a temperature monitor configured to obtain the temperature of the conditioning liquid or ozone water, a hydrogen ion concentration monitor configured to obtain the hydrogen ion concentration of the conditioning liquid, and an ozone concentration monitor configured to obtain the ozone concentration of the ozone water, and when the temperature obtained by the temperature monitor is above a specific value, the hydrogen ion concentration obtained by the hydrogen ion concentration monitor is above a specific value, and the ozone concentration obtained by the ozone concentration monitor is above a specific value, a control unit may be provided for controlling the processing of the liquid delivery unit by delivering ozone water from the dissolution unit to at least one processing chamber. In this case, the ozone concentration of the ozone water supplied to at least one processing chamber is stably maintained above a specific value, thereby achieving a uniform cleaning result.

Example 11. Even if any of the devices in Examples 1 to 10 further includes a control unit, at least one processing chamber includes a plurality of processing chambers configured to perform a cleaning process on a substrate using ozone water, a liquid delivery pipe diverges and extends from the dissolution unit toward each of the plurality of processing chambers, and the liquid delivery unit is configured to deliver ozone water from the dissolution unit to each of the plurality of processing chambers through the liquid delivery pipe, and the control unit controls the liquid delivery unit in a manner that ozone water is not delivered to the remaining processing chambers among the plurality of processing chambers when ozone water is delivered to one of the plurality of processing chambers. In this case, the cleaning process of the substrate using ozone water is not performed simultaneously in each chamber. Therefore, ozone water with a stable ozone concentration is supplied to each chamber. Therefore, even if the substrate is cleaned in any processing chamber, a uniform cleaning result can be obtained.

Example 12. Even if any of the devices in Examples 1 to 11 further includes a liquid discharge unit disposed in the liquid delivery pipe and configured to discharge the ozone water to the outside of the system, and the ozone water is not delivered to at least one processing chamber, a control unit for controlling the liquid discharge unit to discharge the ozone water to the outside of the system may be implemented. In this case, since the ozone water is unlikely to remain in the liquid delivery pipe, the ozone concentration of the ozone water can be further stabilized.

Example 13. A substrate processing method according to another example of the present disclosure includes the steps of supplying a conditioning liquid representing ozone gas and a specific hydrogen ion concentration to a dissolving part, dissolving the ozone gas in the conditioning liquid to generate ozone water, and delivering the ozone water from the dissolving part through a liquid delivery pipe to at least one processing chamber configured to perform a cleaning process on the substrate with the ozone water. In this case, the same effect as the device of Example 1 is obtained.

Example 14: Even if the method of Example 13 further includes a step of adjusting the hydrogen ion concentration of the adjustment liquid in response to the ozone concentration of the ozone water flowing in the liquid delivery pipe, in this case, the same effect as that of the device of Example 4 is obtained.

Example 15. In the method of Example 13 or Example 14, even if the step of sending ozone water includes sending ozone water from the dissolving part to at least one processing chamber when the temperature of the adjustment liquid or ozone water is above a specific value, the hydrogen ion concentration of the adjustment liquid is above a specific value, and the ozone concentration of the ozone water is above a specific value, it is also acceptable. In this case, the same effect as the device of Example 10 is obtained.

Example 16. In any of the methods of Examples 13 to 15, even if at least one processing chamber includes a plurality of processing chambers configured to clean the substrate with ozone water, the step of supplying ozone water includes supplying ozone water to one of the plurality of processing chambers, and the ozone water may not be supplied to the remaining processing chambers of the plurality of processing chambers. In this case, the same effect as the apparatus of Example 11 is obtained.

Example 17: Even if any of the methods in Examples 13 to 16 further includes the step of discharging the ozone water outside the system when the ozone water is not delivered to at least one processing chamber, in this case, the same effect as that of the device in Example 12 is obtained.

Example 18. A computer-readable recording medium related to other aspects of the present disclosure records a program for causing a substrate processing device to implement any of the substrate processing methods in Examples 13 to 17. In this case, the same effects as those of any of the methods in Examples 13 to 17 are obtained. In this specification, the computer-readable recording medium may include a non-transitory tangible medium (non-transitory computer recording medium) (e.g., various main memory devices or auxiliary memory devices), or a transmission signal (transitory computer recording medium) (e.g., a data signal that can be provided via a network).

1: Substrate processing system 3: Processing station 4: Control device 10: Substrate processing device 16: Processing unit 18: Control unit 100: Ozone water supply unit 110: Ozone gas supply unit 120: Adjustment liquid supply unit 126: Hydrogen ion concentration monitor 130: Dissolution unit 140: Liquid supply unit 142: Temperature monitor 143: Ozone concentration monitor 200: Alkaline solution supply unit 300: Rinse liquid supply unit 400: Drain unit 500: Exhaust unit D6~D9: Pipe (liquid supply pipe) RM: Recording medium

[FIG. 1] is a top view schematically showing an example of a substrate processing system. [FIG. 2] is a diagram showing an example of a substrate processing device. [FIG. 3] is a block diagram showing an example of a main part of a substrate processing system. [FIG. 4] is a schematic diagram showing an example of a hardware structure of a controller. [FIG. 5] is a flow chart for explaining a wafer processing process. [FIG. 6] is a diagram showing another example of a substrate processing device.

4: Control device

10: Substrate processing device

16A~16C: Processing unit

16a: Processing chamber

16b: Rotation holding part

18: Control Department

19: Memory Department

100: Ozone water supply department

110: Ozone gas supply unit

120: Adjustment fluid supply unit

121: Liquid source

122: Liquid source

123: Circulation tank

124: Pump

125: Heater

126: Hydrogen ion concentration monitor

130: Dissolution Department

140: Liquid delivery section

141: Auxiliary heater

142: Temperature monitor

143: Ozone concentration monitor

200: Alkaline solution supply unit

201: Liquid source

202: Liquid source

203: Circulation tank

204: Pump

205: Heater

206: Hydrogen ion concentration monitor

300: Rinse fluid supply unit

301: Liquid source

302: Pump

400: Drainage section

401: Drainage treatment unit

500: Exhaust section

501: Exhaust treatment unit

502: Pump

D1~D21: Piping

D7a: Adjustment Department

D8a: Adjustment Department

RM: Recording Media

N1: Nozzle

N2: Nozzle

V1~V12: Valve

W: Wafer

Claims (11)

A substrate processing device comprises: an ozone gas supply unit configured to supply ozone gas; a conditioning liquid supply unit configured to supply a conditioning liquid indicating a specific hydrogen ion concentration; a dissolving unit configured to dissolve the ozone gas in the conditioning liquid to generate ozone water; at least one processing chamber configured to perform a cleaning process on a substrate using the ozone water; a liquid delivery unit configured to deliver the ozone water from the dissolving unit to the at least one processing chamber via a liquid delivery pipe; an ozone concentration monitor disposed in the liquid delivery pipe and configured to obtain the ozone concentration of the ozone water on the downstream side of the dissolving unit; a temperature monitor configured to obtain the temperature of the conditioning liquid or the ozone water; a hydrogen ion concentration a monitor configured to obtain the hydrogen ion concentration of the conditioning liquid; and a control unit configured to perform the following processing: adjusting the hydrogen ion concentration of the conditioning liquid generated in the conditioning liquid supply unit in response to the ozone concentration obtained by the ozone concentration monitor, and controlling the conditioning liquid supply unit in such a manner that the ozone concentration is maintained at an appropriate value; The treatment of the liquid delivery section is controlled by delivering the ozone water from the dissolving section to the at least one treatment chamber when the temperature obtained by the temperature monitor is above a specific value, the hydrogen ion concentration obtained by the hydrogen ion concentration monitor is above a specific value, and the ozone concentration obtained by the ozone concentration monitor is above a specific value. The substrate processing device as set forth in claim 1 further comprises a liquid discharge unit connected to the liquid delivery pipe and configured to discharge the ozone water outside the system. The substrate processing device as claimed in claim 1 or 2, wherein the path length of the liquid delivery pipe from the dissolution section to the ozone concentration monitor is approximately equal to the path length of the liquid delivery pipe from the dissolution section to the at least one processing chamber. The substrate processing device as claimed in claim 1 or 2, wherein the at least one processing chamber includes a first processing chamber and a second processing chamber configured to clean the substrate with the ozone water, the liquid delivery pipe diverges and extends from the dissolution section toward each of the first processing chamber and the second processing chamber, and the path length of the liquid delivery pipe from the dissolution section to the first processing chamber is approximately equal to the path length of the liquid delivery pipe from the dissolution section to the second processing chamber. The substrate processing device as claimed in claim 1 or 2, wherein the conditioning liquid supply unit is configured to mix water and an acidic solution to generate the conditioning liquid. A substrate processing device as claimed in claim 5, wherein the conditioning liquid supply unit is configured to circulate the conditioning liquid. The substrate processing device as claimed in claim 1 or 2 further comprises an alkaline solution supply unit configured to supply an alkaline solution to the above-mentioned liquid delivery pipe. The substrate processing device as claimed in claim 1 or 2, wherein the at least one processing chamber includes a plurality of processing chambers configured to perform a cleaning process on the substrate using the ozone water, the liquid delivery pipe diverges from the dissolution section and extends toward each of the plurality of processing chambers, the liquid delivery section is configured to deliver the ozone water from the dissolution section to each of the plurality of processing chambers through the liquid delivery pipe, and the control section controls the processing of the liquid delivery section in a manner that the ozone water is not delivered to the remaining processing chambers of the plurality of processing chambers when the ozone water is delivered to one of the plurality of processing chambers. The substrate processing device as claimed in claim 1 or 2 further comprises: a liquid discharge unit, which is arranged in the liquid delivery pipe and is configured to discharge the ozone water outside the system; the control unit controls the processing of the liquid discharge unit in a manner that the ozone water is discharged outside the system when the ozone water is not delivered to the at least one processing chamber. A substrate processing method includes: supplying ozone gas and a conditioning liquid indicating a specific hydrogen ion concentration to a dissolving part, dissolving the ozone gas in the conditioning liquid, and generating ozone water; delivering the ozone water from the dissolving part to at least one processing chamber configured to perform a cleaning process on the substrate with the ozone water through a liquid delivery pipe; and Oxygen concentration, a step of adjusting the hydrogen ion concentration of the above-mentioned adjustment liquid and maintaining the above-mentioned ozone concentration at an appropriate value, and a step of delivering the above-mentioned oxygenated water, which includes a step of delivering the ozone water from the dissolution part to at least one processing chamber when the temperature of the adjustment liquid or the ozone water is above a specific value, the hydrogen ion concentration of the adjustment liquid is above a specific value, and the ozone concentration of the ozone water is above a specific value. A computer-readable recording medium that records a program for enabling a substrate processing device to implement a substrate processing method as set forth in claim 10.

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