TWI860894B - Estimation method for connection of chip - Google Patents
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Abstract
Description
本發明涉及一種晶片量測方法,尤其涉及一種晶片接合預估方法。 The present invention relates to a chip measurement method, and more particularly to a chip bonding estimation method.
現有的晶片共面性量測方法是採用固態技術協會(JEDEC)的規範(如:JEDEC22-B108B),其主要是建構在測量球狀網格陣列(Ball Grid Array,BGA)封裝或插針網格陣列(Pin Grid Array,PGA)封裝的晶片之上,用以評估晶片的焊接效果。然而,隨著晶片技術的演進,現有晶片共面性量測方法逐漸難以準確地評估出所有的晶片類型的焊接效果,例如:平面網格陣列(Land Grid Array,LGA)封裝的晶片。 The existing chip coplanarity measurement method adopts the specifications of the Solid State Technology Association (JEDEC) (such as JEDEC22-B108B), which is mainly built on the measurement of Ball Grid Array (BGA) packaged or Pin Grid Array (PGA) packaged chips to evaluate the chip welding effect. However, with the evolution of chip technology, the existing chip coplanarity measurement method has gradually become difficult to accurately evaluate the welding effect of all chip types, such as: Land Grid Array (LGA) packaged chips.
於是,本發明人認為上述缺陷可改善,乃特潛心研究並配合科學原理的運用,終於提出一種設計合理且有效改善上述缺陷的本發明。 Therefore, the inventor believes that the above defects can be improved, so he conducted intensive research and applied scientific principles, and finally proposed an invention with a reasonable design and effective improvement of the above defects.
本發明實施例在於提供一種晶片接合預估方法,其能有效地改善現有晶片共面性量測方法所可能產生的缺陷。 The present invention provides a chip bonding prediction method, which can effectively improve the defects that may be caused by the existing chip coplanarity measurement method.
本發明實施例公開一種晶片接合預估方法,其包括:一前置步驟:提供一晶片,其具有多個觸點;其中,多個所述觸點的端面正投影於一平面時,其面積總和定義為一預設面積;其中,所述晶片的多個所述觸點能 被用來分別設置在位於一電路板之上的多個焊料,以使多個所述端面具有接觸於多個所述焊料的一焊接面積;其中,所述晶片接合預估方法定義有一接合值,其為所述焊接面積除以所述預設面積的一比值;一取像步驟:以一光學模組對所述晶片的多個所述觸點的所述端面進行立體取像、並傳遞信號至一處理模組,以得到形狀對應於多個所述端面的一立體構面;一預估步驟:以所述處理模組依據所述立體構面取得其在一預估深度時的橫截面,其面積定義為一預估焊接面積;以及一判斷步驟:通過所述處理模組,以所述預估焊接面積除以所述預設面積而得到一接合預估值。 The present invention discloses a chip bonding prediction method, which includes: a pre-step: providing a chip having a plurality of contacts; wherein, when the end faces of the plurality of contacts are orthographically projected onto a plane, the sum of their areas is defined as a preset area; wherein, the plurality of contacts of the chip can be used to be respectively disposed on a plurality of solders located on a circuit board, so that the plurality of end faces have a bonding area contacting the plurality of solders; wherein, the chip bonding prediction method defines a bonding value, which is the bonding area divided by the predetermined area. a ratio of the preset area to the end surface of the chip; an imaging step: using an optical module to stereoscopically image the end surfaces of the multiple contacts of the chip and transmit signals to a processing module to obtain a stereoscopic plane corresponding to the multiple end surfaces; an estimation step: using the processing module to obtain a cross-section at an estimated depth based on the stereoscopic plane, and its area is defined as an estimated welding area; and a judgment step: using the processing module to divide the estimated welding area by the preset area to obtain an estimated bonding value.
本發明實施例也公開一種晶片接合預估方法,其包括:一前置步驟:提供一晶片,其具有多個觸點;其中,多個所述觸點的端面正投影於一平面時,其面積總和定義為一預設面積;一取像步驟:以一光學模組對所述晶片的多個所述觸點的所述端面進行立體取像、並傳遞信號至一處理模組,以得到形狀對應於多個所述端面的一立體構面;一預估步驟:以所述處理模組依據所述立體構面取得其在一預估深度時的橫截面,其面積定義為一預估焊接面積;以及一判斷步驟:通過所述處理模組,以所述預估焊接面積除以所述預設面積而得到一接合預估值。 The present invention also discloses a chip bonding estimation method, which includes: a pre-step: providing a chip having multiple contacts; wherein, when the end faces of the multiple contacts are orthographically projected onto a plane, the sum of their areas is defined as a preset area; an imaging step: using an optical module to stereoscopically image the end faces of the multiple contacts of the chip, and transmitting signals to a processing module to obtain a stereoscopic configuration plane corresponding to the multiple end faces; an estimation step: using the processing module to obtain a cross-section at an estimated depth based on the stereoscopic configuration plane, and its area is defined as an estimated welding area; and a judgment step: using the processing module to divide the estimated welding area by the preset area to obtain a bonding estimation value.
綜上所述,本發明實施例所公開的晶片接合預估方法,其能夠在所述晶片於焊接之前,通過取得對應於多個所述端面的所述立體構面,以先行估算出所述晶片的所述接合預估值,進而評估所述晶片是否續行後續焊接作業,以利於提高實施所述焊接作業之後的產品良率。 In summary, the chip bonding estimation method disclosed in the embodiment of the present invention can estimate the bonding estimation value of the chip by obtaining the three-dimensional configuration planes corresponding to the multiple end faces before the chip is welded, and then evaluate whether the chip continues the subsequent welding operation, so as to improve the product yield after the welding operation is performed.
再者,本發明實施例所公開的晶片接合預估方法,其所取得的所述晶片的所述接合預估值,其不受固態技術協會的共面度規範拘束且能有效地對所有晶片類型的焊接效果進行評估。 Furthermore, the chip bonding estimation method disclosed in the embodiment of the present invention obtains the bonding estimation value of the chip, which is not constrained by the coplanarity standard of the Solid State Technology Association and can effectively evaluate the welding effect of all chip types.
為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關 本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。 To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, such description and drawings are only used to illustrate the present invention and do not limit the scope of protection of the present invention.
以下是通過特定的具體實施例來說明本發明所公開有關“晶片接合預估方法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 The following is a specific embodiment to illustrate the implementation of the "chip bonding estimation method" disclosed in the present invention. The technical personnel in this field can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without deviating from the concept of the present invention. In addition, the attached drawings of the present invention are only for simple schematic illustrations and are not depicted according to actual sizes. Please note in advance. The following implementation will further explain the relevant technical content of the present invention in detail, but the disclosed content is not used to limit the scope of protection of the present invention.
應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應 受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 It should be understood that although the terms "first", "second", "third" and so on may be used in this article to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used in this article may include any one or more combinations of the related listed items depending on the actual situation.
請參閱圖1至圖9所示,其為本發明的一實施例。本實施例公開一種晶片接合預估方法S100,其依序包含有一前置步驟S110、一取像步驟S120、一預估步驟S130、及一判斷步驟S140,但本發明不以此為限。舉例來說,於本發明未繪示的其他實施例中,上述多個步驟S110~S140之中的任一個可以依據實際需求而加以調整變化。以下接著依序說明所述晶片接合預估方法S100的各個所述步驟。 Please refer to Figures 1 to 9, which are an embodiment of the present invention. This embodiment discloses a chip bonding estimation method S100, which sequentially includes a pre-step S110, an imaging step S120, an estimation step S130, and a judgment step S140, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, any of the above steps S110~S140 can be adjusted and changed according to actual needs. The following is a sequential description of each of the steps of the chip bonding estimation method S100.
所述前置步驟S110:如圖1至圖5所示,提供一晶片200及用來量測所述晶片200的一晶片量測設備100。於本實施例中,所述晶片200的數量是以一個來介紹其與所述晶片量測設備100之間的連接關係,並且所述晶片接合預估方法S100是通過所述晶片量測設備100來實施其餘的步驟(如:所述取像步驟S120、所述預估步驟S130、及所述判斷步驟S140),據以利於在所述晶片200焊接至一電路板300之前預估所述晶片200的接合值,但本發明不受限於此。 The pre-step S110: As shown in FIG. 1 to FIG. 5, a chip 200 and a chip measuring device 100 for measuring the chip 200 are provided. In this embodiment, the number of the chip 200 is one to introduce the connection relationship between it and the chip measuring device 100, and the chip bonding estimation method S100 is to implement the remaining steps (such as: the imaging step S120, the estimation step S130, and the judgment step S140) through the chip measuring device 100, so as to estimate the bonding value of the chip 200 before the chip 200 is soldered to a circuit board 300, but the present invention is not limited thereto.
舉例來說,於本發明未繪示的其他實施例中,所述晶片接合預估方法S100(或所述晶片量測設備100)可以用來同時預估多個所述晶片200的所述接合值;或者,所述晶片接合預估方法S100能夠以不同於所述晶片量測設備100的裝置來實施;又或者,所述晶片量測設備100也可以被單獨地應用(如:販賣)。 For example, in other embodiments not shown in the present invention, the chip bonding estimation method S100 (or the chip measurement device 100) can be used to simultaneously estimate the bonding values of multiple chips 200; or, the chip bonding estimation method S100 can be implemented by a device different from the chip measurement device 100; or, the chip measurement device 100 can also be used alone (e.g., sold).
需額外說明的是,固態技術協會(JEDEC)的共面度規範(如:JEDEC22-B108B)實則是無關於晶片與焊料之間的接合情況,因而所述接合值於本實施例中所採用的定義是不同於固態技術協會的上述共面度規範,據 以利於較為準確地呈現所述晶片200的焊接情況,具體說明如下:所述晶片200具有多個觸點201,並且多個所述觸點201的端面2011正投影於一平面時,其面積總和定義為一預設面積。其中,所述晶片200的多個所述觸點201能被用來分別設置在位於所述電路板300之上的多個焊料400,以使多個所述端面2011具有接觸於多個所述焊料400的一焊接面積。再者,所述晶片接合預估方法S100所定義有所述接合值,其為所述焊接面積除以所述預設面積的一比值。 It should be further explained that the coplanarity specification (e.g., JEDEC22-B108B) of the Solid State Technology Association (SSE) is actually irrelevant to the bonding condition between the chip and the solder. Therefore, the definition of the bonding value used in this embodiment is different from the above coplanarity specification of the Solid State Technology Association. This is to more accurately present the soldering condition of the chip 200. Specifically, the chip 200 has a plurality of contacts 201, and when the end faces 2011 of the plurality of contacts 201 are orthographically projected onto a plane, the sum of their areas is defined as a preset area. The plurality of contacts 201 of the chip 200 can be used to be respectively arranged on the plurality of solders 400 located on the circuit board 300, so that the plurality of end faces 2011 have a welding area in contact with the plurality of solders 400. Furthermore, the chip bonding estimation method S100 defines the bonding value, which is a ratio of the welding area divided by the preset area.
需額外說明的是,所述晶片200的封裝構造可以是進一步限定為平面網格陣列(Land Grid Array,LGA)封裝,而每個所述觸點201則為一焊墊。更詳細地說,所述晶片200具有包覆多個所述觸點201的一封裝體202,並且多個所述觸點201的所述端面2011自所述封裝體202裸露於外、但未突伸出所述封裝體202的底緣,但本發明不以此為限。舉例來說,於本發明未繪示的其他實施例中,所述晶片200也可以採用其他類型的封裝構造,例如:球狀網格陣列(Ball Grid Array,BGA)封裝構造,所述觸點201則為一焊接球;或者,插針網格陣列(Pin Grid Array,PGA)封裝構造,所述觸點201則為一針腳。 It should be further explained that the package structure of the chip 200 can be further defined as a Land Grid Array (LGA) package, and each of the contacts 201 is a pad. In more detail, the chip 200 has a package body 202 covering a plurality of the contacts 201, and the end surfaces 2011 of the plurality of the contacts 201 are exposed from the package body 202 but do not protrude from the bottom edge of the package body 202, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the chip 200 may also adopt other types of packaging structures, such as: a ball grid array (BGA) packaging structure, in which the contact 201 is a solder ball; or a pin grid array (PGA) packaging structure, in which the contact 201 is a pin.
為便於理解本實施例,以下先接著說明所述晶片量測設備100,其包含一支撐架1、分別安裝於所述支撐架1兩末端的兩個承載模組2、位於所述支撐架1內側的一橫向移載機構3、安裝於所述橫向移載機構3且位於所述支撐架1內側的一光學模組4、及電性耦接於所述光學模組4的一處理模組5(如:處理器或電腦)。 To facilitate understanding of this embodiment, the wafer measurement device 100 is described below, which includes a support frame 1, two supporting modules 2 respectively mounted at the two ends of the support frame 1, a lateral transfer mechanism 3 located on the inner side of the support frame 1, an optical module 4 mounted on the lateral transfer mechanism 3 and located on the inner side of the support frame 1, and a processing module 5 (such as a processor or a computer) electrically coupled to the optical module 4.
需說明的是,所述晶片量測設備100於本實施例中雖是以包含上述構件來說明,但本發明不以此為限。舉例來說,於本發明未繪示的其他實施例中,所述晶片量測設備100所包含的所述承載模組2數量可以是至少一 個,並且所述支撐架1則對應調整為L形;或者,所述晶片量測設備100可以省略所述橫向移載機構3,以使所述光學模組4不會移動;又或者,所述晶片量測設備100也可以省略所述支撐架1與所述橫向移載機構3,而至少一個所述承載模組2與所述光學模組4則是安裝於其他構件上。 It should be noted that, although the wafer measuring device 100 is described in this embodiment as including the above-mentioned components, the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the wafer measuring device 100 may include at least one supporting module 2, and the supporting frame 1 is correspondingly adjusted to an L shape; or, the wafer measuring device 100 may omit the lateral transfer mechanism 3 so that the optical module 4 does not move; or, the wafer measuring device 100 may omit the supporting frame 1 and the lateral transfer mechanism 3, and at least one supporting module 2 and the optical module 4 are installed on other components.
此外,由於兩個所述承載模組2於本實施例中是採用大致相同的結構,並且兩個所述承載模組2也大致呈對稱狀安裝(如:兩個所述承載模組2彼此相向排列),所以為便於說明本實施例,以下將先說明單個所述承載模組2的結構,但本發明不以此為限。舉例來說,在本發明未繪示的其他實施例中,所述晶片量測設備100也可以包含在結構上略有差異的多個所述承載模組2。 In addition, since the two supporting modules 2 in this embodiment adopt substantially the same structure, and the two supporting modules 2 are also installed substantially symmetrically (e.g., the two supporting modules 2 are arranged facing each other), for the convenience of explaining this embodiment, the structure of a single supporting module 2 will be described below, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the chip measurement device 100 may also include a plurality of supporting modules 2 with slightly different structures.
所述承載模組2於本實施例中包含有呈板狀一承載台21(也可視為承載板)、連接於所述承載台21並安裝於所述支撐架1的一縱向移載機構22、安裝於所述承載台21上的一光學玻璃23、及可拆卸地安裝於所述承載台21的一晶片治具24,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述承載模組2的所述縱向移載機構22及/或所述晶片治具24可以被省略或以其他構件取代;或者,所述承載模組2也可以採用非為板狀的承載台21。 The support module 2 in this embodiment includes a plate-shaped support platform 21 (also regarded as a support plate), a longitudinal transfer mechanism 22 connected to the support platform 21 and mounted on the support frame 1, an optical glass 23 mounted on the support platform 21, and a chip fixture 24 detachably mounted on the support platform 21, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the longitudinal transfer mechanism 22 and/or the chip fixture 24 of the support module 2 can be omitted or replaced by other components; or, the support module 2 can also adopt a non-plate-shaped support platform 21.
於本實施例中,所述承載台21包含有位於相反兩側的一第一表面211與一第二表面212,並且所述承載台21形成有自所述第一表面211貫穿至所述第二表面212的一穿孔213。其中,所述承載台21的所述穿孔213於本實施例中呈長形且定義有一長度方向D,並且所述穿孔213較佳是自遠離所述縱向移載機構22的所述承載台21一端凹設所形成。更詳細地說,所述承載台21於本實施例中是由其所述第一表面211凹設形成有呈環形且圍繞於所述穿孔213旁的一容置槽214。 In this embodiment, the support platform 21 includes a first surface 211 and a second surface 212 located on opposite sides, and the support platform 21 is formed with a through hole 213 penetrating from the first surface 211 to the second surface 212. The through hole 213 of the support platform 21 is elongated in this embodiment and defines a length direction D, and the through hole 213 is preferably formed by recessing from one end of the support platform 21 away from the longitudinal transfer mechanism 22. More specifically, the support platform 21 is formed by recessing the first surface 211 to form a ring-shaped receiving groove 214 surrounding the through hole 213 in this embodiment.
再者,所述承載台21安裝於所述縱向移載機構22,並且所述縱向移載機構22能使所述承載台21沿著沿垂直所述長度方向D(與所述鉛錘方向V)的一平移方向H移動。其中,所述承載台21是以未形成有所述穿孔213的部位安裝於所述縱向移載機構22,以使形成有所述穿孔213的所述承載台21部位呈現懸空狀。 Furthermore, the support platform 21 is installed on the longitudinal transfer mechanism 22, and the longitudinal transfer mechanism 22 can move the support platform 21 along a translation direction H perpendicular to the longitudinal direction D (and the hammer direction V). The support platform 21 is installed on the longitudinal transfer mechanism 22 at a portion where the through hole 213 is not formed, so that the portion of the support platform 21 where the through hole 213 is formed is suspended.
需額外說明的是,由於所述承載台21於本實施例中是呈非透光狀,所以所述承載台21是以形成有所述穿孔213,以利於搭配其他構件來共同實現所述晶片200的量測,但本發明不受限於此。舉例來說,於本發明未繪示的其他實施例中,所述承載台21也可以是呈透光狀且未形成有所述穿孔213。 It should be noted that, since the support platform 21 is non-translucent in this embodiment, the support platform 21 is formed with the through hole 213 to facilitate the combination with other components to jointly realize the measurement of the chip 200, but the present invention is not limited to this. For example, in other embodiments not shown in the present invention, the support platform 21 may also be translucent and not have the through hole 213.
所述光學玻璃23於本實施例中為一透明平板狀結構,並且所述光學玻璃23具有位於相反側的一承載平面231以及一入光面232,所述入光面232於本實施例中也是呈平面狀,並且所述入光面232的外形等同於所述承載平面231的外形,但本發明不以此為限。 The optical glass 23 is a transparent flat plate structure in this embodiment, and the optical glass 23 has a supporting plane 231 and a light incident surface 232 located on opposite sides. The light incident surface 232 is also planar in this embodiment, and the shape of the light incident surface 232 is the same as the shape of the supporting plane 231, but the present invention is not limited thereto.
其中,所述光學玻璃23的位置對應於所述穿孔213(如:所述光學玻璃23設置於所述承載台21的所述容置槽214),並且所述光學玻璃23較佳是完整地覆蓋於所述穿孔213的一側(如:圖3中的所述穿孔213頂側),但本發明不以此為限。舉例來說,在本發明未繪示的其他實施例中,所述光學玻璃23也可以是僅覆蓋於局部的所述穿孔213。 The position of the optical glass 23 corresponds to the through hole 213 (e.g., the optical glass 23 is disposed in the receiving groove 214 of the support platform 21), and the optical glass 23 preferably completely covers one side of the through hole 213 (e.g., the top side of the through hole 213 in FIG. 3), but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the optical glass 23 may also only cover a portion of the through hole 213.
再者,所述承載平面231能用來供至少一個晶片200的多個觸點201設置,以使每個所述觸點201的所述端面2011朝向所述承載平面231。於本實施例中,所述光學玻璃23的所述承載平面231是垂直於所述鉛錘方向V,並且所述光學玻璃23為平行(或定義出)所述長度方向D的一長條狀構造,以使所述承載平面231能供多個所述晶片200沿所述長度方向D設置。 Furthermore, the supporting plane 231 can be used to provide multiple contacts 201 of at least one chip 200, so that the end surface 2011 of each contact 201 faces the supporting plane 231. In this embodiment, the supporting plane 231 of the optical glass 23 is perpendicular to the hammer direction V, and the optical glass 23 is a long strip structure parallel to (or defines) the length direction D, so that the supporting plane 231 can provide multiple chips 200 for setting along the length direction D.
需額外說明的是,所述光學玻璃23於本實施例中雖是以平板狀 的玻璃來說明,但在本發明未繪示的其他實施例中,所述承載平面231可以僅佔所述光學玻璃23的局部板面,而在所述承載平面231以外的所述光學玻璃23區域可以是非為平面狀。 It should be further explained that, although the optical glass 23 is described as a flat plate in this embodiment, in other embodiments not shown in the present invention, the supporting plane 231 may only occupy a partial surface of the optical glass 23, and the area of the optical glass 23 outside the supporting plane 231 may be non-planar.
所述晶片治具24安裝於所述承載台21的所述第一表面211,以使所述光學玻璃23被夾持於所述承載台21與所述晶片治具24之間。其中,所述晶片治具24包含有兩個活動片241,並且兩個所述活動片241的相對位置能相對於所述承載台21變動,以形成有至少一個固持槽242,用以收容至少一個所述晶片200。 The chip fixture 24 is mounted on the first surface 211 of the carrier 21 so that the optical glass 23 is clamped between the carrier 21 and the chip fixture 24. The chip fixture 24 includes two movable plates 241, and the relative positions of the two movable plates 241 can be changed relative to the carrier 21 to form at least one holding groove 242 for accommodating at least one chip 200.
於本實施例中,兩個所述活動片241的相對移動方向垂直於所述長度方向D與所述鉛錘方向V,並且兩個所述活動片241彼此組接而形成的所述固持槽242的數量為多個,其位置對應於所述承載平面231。也就是說,沿所述長度方向D設置於所述承載平面231的多個所述晶片200可以被兩個所述活動片241所夾持、並分別定位於多個所述固持槽242之內。 In this embodiment, the relative moving directions of the two movable sheets 241 are perpendicular to the length direction D and the hammer direction V, and the number of the holding grooves 242 formed by the two movable sheets 241 being assembled together is multiple, and their positions correspond to the supporting plane 231. In other words, the multiple chips 200 arranged on the supporting plane 231 along the length direction D can be clamped by the two movable sheets 241 and positioned in the multiple holding grooves 242 respectively.
以上為單個所述承載模組2的結構說明,下述接著介紹所述晶片量測設備100的其他構造及與兩個所述承載模組2之間的連接關係。其中,所述光學模組4安裝於所述橫向移載機構3且對應於所述光學玻璃23的所述入光面232設置,並且所述橫向移載機構3能使所述光學模組4面向所述光學玻璃23的所述入光面232且沿所述長度方向D移動。 The above is a structural description of a single carrier module 2. The following will introduce other structures of the chip measurement equipment 100 and the connection relationship between the two carrier modules 2. The optical module 4 is installed on the lateral transfer mechanism 3 and is arranged corresponding to the light incident surface 232 of the optical glass 23, and the lateral transfer mechanism 3 can make the optical module 4 face the light incident surface 232 of the optical glass 23 and move along the longitudinal direction D.
也就是說,所述光學模組4通過所述橫向移載機構3而能選擇性移動至任一個所述承載模組2所承載的任一個所述晶片200的下方。據此,所述光學模組4能通過所述穿孔213而量測設置於所述承載平面231上的至少一個所述晶片200的多個所述觸點201。 That is, the optical module 4 can selectively move to the bottom of any chip 200 carried by any of the carrying modules 2 through the lateral transfer mechanism 3. Accordingly, the optical module 4 can measure the multiple contacts 201 of at least one chip 200 disposed on the carrying plane 231 through the through hole 213.
於本實施例中,所述光學模組4包含安裝於所述橫向移載機構3的一定位支架41、及安裝固定於所述定位支架41的一光投射器42與多個光接 收器43。其中,所述光投射器42與多個所述光接收器43沿所述長度方向D排成一列。也就是說,多個所述光接收器43的排列方向平行於所述光學玻璃23的所述長度方向D,並且兩個所述活動片241的相對移動方向垂直於多個所述光接收器43的所述排列方向。 In this embodiment, the optical module 4 includes a positioning bracket 41 mounted on the lateral transfer mechanism 3, and a light projector 42 and a plurality of light receivers 43 mounted and fixed on the positioning bracket 41. The light projector 42 and the plurality of light receivers 43 are arranged in a row along the length direction D. That is, the arrangement direction of the plurality of light receivers 43 is parallel to the length direction D of the optical glass 23, and the relative movement direction of the two movable sheets 241 is perpendicular to the arrangement direction of the plurality of light receivers 43.
以上內容為所述前置步驟S110的說明,下述接著介紹所述晶片接合預估方法S100的其他步驟。所述取像步驟S120:如圖1、圖6和圖7所示(並請參酌圖2和圖3),以所述光學模組4對所述晶片200的多個所述觸點201的所述端面2011進行立體取像、並傳遞所述信號至所述處理模組5,以得到形狀對應於多個所述端面2011的所述立體構面S。 The above content is an explanation of the pre-step S110. The following is an introduction to other steps of the chip bonding estimation method S100. The imaging step S120: As shown in Figures 1, 6 and 7 (please refer to Figures 2 and 3), the optical module 4 is used to stereoscopically image the end faces 2011 of the multiple contacts 201 of the chip 200, and transmit the signal to the processing module 5 to obtain the three-dimensional surface S corresponding to the multiple end faces 2011.
進一步地說,所述光投射器42(於所述取像步驟S120之中)朝至少一個所述晶片200的多個所述觸點201發出基於干涉條紋的一結構光L,並且多個所述光接收器43(於所述取像步驟S120之中)接收由至少一個所述晶片200所反射的所述結構光L,以得到所述信號;所述處理模組5是通過點雲數據(point cloud data)方式呈現所述立體構面S(如:圖8),其能通過一螢幕(未標示)顯示,但本發明不以上述為限。也就是說,於本發明未繪示的其他實施例中,所述取像步驟S120能依據實際需求,而通過各種取像方式得到所述立體構面S。 Furthermore, the light projector 42 (in the imaging step S120) emits a structured light L based on interference fringes toward the multiple contacts 201 of at least one chip 200, and the multiple light receivers 43 (in the imaging step S120) receive the structured light L reflected by at least one chip 200 to obtain the signal; the processing module 5 presents the three-dimensional surface S (such as FIG. 8 ) in the form of point cloud data, which can be displayed on a screen (not shown), but the present invention is not limited to the above. That is to say, in other embodiments not shown in the present invention, the imaging step S120 can obtain the three-dimensional surface S through various imaging methods according to actual needs.
所述預估步驟S130:如圖1、圖8和圖9所示(並請參酌圖2和圖3),以所述處理模組5依據所述立體構面S取得其在一預估深度時的橫截面S1,其面積定義為一預估焊接面積。於本實施例中,所述預估深度是指:所述晶片200的所述觸點201可能會連接於相對應所述焊料400(如:圖5)的深度。 The estimation step S130: As shown in FIG. 1, FIG. 8 and FIG. 9 (please refer to FIG. 2 and FIG. 3), the processing module 5 obtains a cross-section S1 at an estimated depth according to the three-dimensional plane S, and its area is defined as an estimated welding area. In this embodiment, the estimated depth refers to the depth at which the contact 201 of the chip 200 may be connected to the corresponding solder 400 (such as FIG. 5).
此外,所述預設面積也可以依據設計需求而調整其定義;例如:所述預設面積可以是所述處理模組5通過所述立體構面S而取得相對應於多個 所述端面2011的總表面積。 In addition, the definition of the preset area can also be adjusted according to design requirements; for example, the preset area can be the total surface area corresponding to the plurality of end faces 2011 obtained by the processing module 5 through the three-dimensional surface S.
所述判斷步驟S140:如圖1至圖5所示,通過所述處理模組5,以所述預估焊接面積除以所述預設面積而得到一接合預估值,據以先行評估判斷所述晶片200是否為合格。於本實施例中,所述接合預估值是指:預估所述晶片200焊接於所述電路板300之後,所述晶片200的多個所述觸點201相連於多個所述焊料400的比例。 The judgment step S140: As shown in Figures 1 to 5, the processing module 5 divides the estimated welding area by the preset area to obtain an estimated bonding value, which is used to preliminarily evaluate whether the chip 200 is qualified. In this embodiment, the estimated bonding value refers to: the estimated ratio of the multiple contacts 201 of the chip 200 connected to the multiple solders 400 after the chip 200 is soldered to the circuit board 300.
再者,所述接合預估值的合格標準可依據實際需求而加以調整變化;舉例來說,對於車用產品來說,所述接合預估值的合格標準較佳是不小於90%,而對一般產品來說,所述接合預估值的合格標準可以是不小於70%。 Furthermore, the qualified standard of the estimated value of the joint can be adjusted according to actual needs; for example, for automotive products, the qualified standard of the estimated value of the joint is preferably not less than 90%, while for general products, the qualified standard of the estimated value of the joint can be not less than 70%.
據此,所述晶片接合預估方法S100於本實施例中能夠在所述晶片200焊接於所述電路板300的多個所述焊料400之前,通過取得對應於多個所述端面2011的所述立體構面S,以先行估算出所述晶片200的所述接合預估值,進而評估所述晶片200是否續行後續焊接作業,以利於提高實施所述焊接作業之後的產品良率。 Accordingly, the chip bonding estimation method S100 in this embodiment can estimate the bonding estimation value of the chip 200 by obtaining the three-dimensional structure S corresponding to the multiple end faces 2011 before the chip 200 is soldered to the multiple solders 400 of the circuit board 300, and then evaluate whether the chip 200 continues the subsequent soldering operation, so as to improve the product yield after the soldering operation is performed.
再者,所述晶片接合預估方法S100於本實施例中所取得的所述晶片200的所述接合預估值,其不受固態技術協會的共面度規範拘束且能有效地對所有晶片類型的焊接效果進行評估。 Furthermore, the bonding estimation value of the chip 200 obtained by the chip bonding estimation method S100 in this embodiment is not constrained by the coplanarity standard of the Solid State Technology Association and can effectively evaluate the welding effect of all chip types.
此外,所述晶片量測設備100於本實施例中可以通過多個構件之間的相互搭配(如:所述光投射器42、多個所述光接收器43、及所述光學玻璃23之間的相對應配置),以利於取得對應於多個所述端面2011的所述立體構面S,進而使所述晶片量測設備100適合用於各種類型的晶片量測。其中,所述晶片量測設備100於本實施例中還能通過進一步設置有所述晶片治具24,以使所述晶片200能夠在穩定狀態下被量測,以有效提高所述立體構面S的精準度。 In addition, the chip measurement device 100 in this embodiment can be used to obtain the three-dimensional surface S corresponding to the multiple end faces 2011 through the mutual matching of multiple components (such as: the corresponding configuration between the light projector 42, the multiple light receivers 43, and the optical glass 23), so as to make the chip measurement device 100 suitable for various types of chip measurement. Among them, the chip measurement device 100 in this embodiment can also be further provided with the chip fixture 24 so that the chip 200 can be measured in a stable state, so as to effectively improve the accuracy of the three-dimensional surface S.
需額外說明的是,本實施例的所述晶片接合預估方法S100可以在所述預估步驟S130進一步實施如下:以所述處理模組5依據所述立體構面S取得每個所述觸點201之中具有深度最大的凹陷處P(如:圖9)。再者,所述判斷步驟S140則進一步對應實施如下:通過所述處理模組5將多個所述觸點201之中具有最大深度的所述凹陷處P,其與位於所述預估深度的所述橫截面S1之間的距離定義為一共面度預估值。 It should be further explained that the chip bonding estimation method S100 of this embodiment can be further implemented as follows in the estimation step S130: the processing module 5 obtains the depression P with the largest depth in each of the contacts 201 according to the three-dimensional structure S (such as: Figure 9). Furthermore, the judgment step S140 is further implemented as follows: the processing module 5 defines the distance between the depression P with the largest depth in multiple contacts 201 and the cross-section S1 located at the estimated depth as a coplanarity estimation value.
此外,所述接合預估值於本實施例中可以是先通過取得所述共面度預估值而後再計算推知,但不以此為限。舉例來說,所述接合預估值也可以是無須通過所述共面度預估值而取得;或是說,所述接合預估值的取得方式可依據設計需求而加以調整變化。 In addition, the estimated bonding value in this embodiment can be obtained by first obtaining the estimated coplanarity value and then calculating and inferring, but it is not limited to this. For example, the estimated bonding value can also be obtained without the estimated coplanarity value; or in other words, the method of obtaining the estimated bonding value can be adjusted according to the design requirements.
據此,所述晶片接合預估方法S100也可以提供習慣使用固態技術協會的共面度規範者,較為熟悉的所述共面度預估值。再者,所述晶片接合預估方法S100還能夠依據取得的每個所述觸點201的所述凹陷處P,以反映所述晶片200的每個所述觸點201於生產過程中所可能產生的缺陷,進而利於提升所述晶片200的生產良率。 Accordingly, the chip bonding estimation method S100 can also provide the coplanarity estimation value that is more familiar to those who are accustomed to using the coplanarity specification of the Solid State Technology Association. Furthermore, the chip bonding estimation method S100 can also reflect the defects that may be generated in the production process of each contact 201 of the chip 200 based on the obtained recess P of each contact 201, thereby helping to improve the production yield of the chip 200.
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的專利範圍內。 The above disclosed contents are only the preferred feasible embodiments of the present invention, and do not limit the patent scope of the present invention. Therefore, all equivalent technical changes made by using the contents of the specification and drawings of the present invention are included in the patent scope of the present invention.
100:晶片量測設備 100: Chip measurement equipment
1:支撐架 1: Support frame
2:承載模組 2: Carrier module
21:承載台 21: Carrier platform
211:第一表面 211: First surface
212:第二表面 212: Second surface
213:穿孔 213:Piercing
214:容置槽 214: Storage tank
22:縱向移載機構 22: Longitudinal transfer mechanism
23:光學玻璃 23: Optical glass
231:承載平面 231: Loading plane
232:入光面 232: Light-entering surface
24:晶片治具 24: Wafer fixture
241:活動片 241:Activity video
242:固持槽 242: Retaining groove
3:橫向移載機構 3: Horizontal transfer mechanism
4:光學模組 4: Optical module
41:定位支架 41: Positioning bracket
42:光投射器 42: Light projector
43:光接收器 43: Optical receiver
5:處理模組 5: Processing module
200:晶片 200: Chip
201:觸點 201:Touch point
2011:端面 2011: End face
202:封裝體 202:Package
300:電路板 300: Circuit board
400:焊料 400: Solder
V:鉛錘方向 V: hammer direction
D:長度方向 D: Length direction
H:平移方向 H: Translation direction
L:結構光 L:Structured light
S:立體構面 S: three-dimensional structure
S1:橫截面 S1: Cross section
P:凹陷處 P: Depression
S100:晶片接合預估方法 S100: Wafer bonding estimation method
S110:前置步驟 S110: Preliminary steps
S120:取像步驟 S120: Imaging step
S130:預估步驟 S130: Estimation step
S140:判斷步驟 S140: Judgment step
圖1為本發明實施例的晶片接合預估方法的步驟流程示意圖。 Figure 1 is a schematic diagram of the steps of the chip bonding estimation method of an embodiment of the present invention.
圖2為圖1中的前置步驟的立體示意圖。 Figure 2 is a three-dimensional schematic diagram of the pre-step in Figure 1.
圖3為圖2中的局部分解示意圖。 Figure 3 is a partial exploded schematic diagram of Figure 2.
圖4為本發明實施例的接合值的說明示意圖(一)。 Figure 4 is a schematic diagram (I) illustrating the bonding value of an embodiment of the present invention.
圖5為本發明實施例的接合值的說明示意圖(二)。 Figure 5 is a schematic diagram (II) illustrating the bonding value of an embodiment of the present invention.
圖6為圖1中的取像步驟的示意圖。 Figure 6 is a schematic diagram of the imaging step in Figure 1.
圖7為圖6中的區域VII的放大示意圖。 Figure 7 is an enlarged schematic diagram of area VII in Figure 6.
圖8為圖1中的預估步驟的示意圖。 Figure 8 is a schematic diagram of the estimation step in Figure 1.
圖9為圖8的局部示意圖。 Figure 9 is a partial schematic diagram of Figure 8.
100:晶片量測設備 100: Chip measurement equipment
1:支撐架 1: Support frame
2:承載模組 2: Carrier module
21:承載台 21: Carrier platform
22:縱向移載機構 22: Longitudinal transfer mechanism
23:光學玻璃 23: Optical glass
24:晶片治具 24: Wafer fixture
241:活動片 241:Activity video
242:固持槽 242: Retaining groove
3:橫向移載機構 3: Horizontal transfer mechanism
4:光學模組 4: Optical module
41:定位支架 41: Positioning bracket
42:光投射器 42: Light projector
43:光接收器 43: Optical receiver
5:處理模組 5: Processing module
200:晶片 200: Chip
V:鉛錘方向 V: hammer direction
D:長度方向 D: Length direction
L:結構光 L:Structured light
S120:取像步驟 S120: Imaging step
Claims (10)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311465521X | 2023-11-06 | ||
| CN202311465521.XA CN119943705A (en) | 2023-11-06 | 2023-11-06 | Die Bonding Estimation Methodology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI860894B true TWI860894B (en) | 2024-11-01 |
| TW202520478A TW202520478A (en) | 2025-05-16 |
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|---|---|---|---|
| TW112144685A TWI860894B (en) | 2023-11-06 | 2023-11-20 | Estimation method for connection of chip |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN119943705A (en) |
| TW (1) | TWI860894B (en) |
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| TW201517175A (en) * | 2013-10-14 | 2015-05-01 | 康寧公司 | Carrier bonding method and object for semiconductor and interposer processing |
| TW201601297A (en) * | 2009-07-17 | 2016-01-01 | 半導體能源研究所股份有限公司 | Semiconductor device and method of manufacturing same |
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| US7391005B2 (en) * | 2002-10-25 | 2008-06-24 | Gennum Corporation | Direct attach optical receiver module and method of testing |
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| TW201810755A (en) * | 2016-08-22 | 2018-03-16 | 美商康寧公司 | Display module and modular display with laser welding seal |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202520478A (en) | 2025-05-16 |
| CN119943705A (en) | 2025-05-06 |
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