TWI860581B - Detection system for tunable/replaceable edge coupling ring - Google Patents

Abstract

A substrate processing system includes a processing chamber. A pedestal is arranged in the processing chamber. An edge coupling ring is arranged adjacent to the pedestal and around a radially outer edge of the substrate. An actuator is configured to selectively move the edge coupling ring relative to the substrate to alter an edge coupling profile of the edge coupling ring. The substrate processing system includes a camera-based detection system that instructs the actuator to adjust a position of the edge coupling ring. The camera is configured to communicate with the controller, and the controller adjusts a position and/or focus of the camera. In response to edge coupling ring condition information from the camera, the controller operates the actuator to move the edge coupling ring vertically. In response to edge coupling ring position information from the camera, the controller operates the actuator to move the edge coupling ring horizontally.

Description

Detection system for adjustable/replaceable edge coupling rings

This application is a continuation-in-part of U.S. Patent Application No. 14/705,430 filed on May 6, 2015. This application is a continuation-in-part of U.S. Patent Application No. 14/598,943 filed on January 16, 2015. The entire contents of these prior applications are incorporated herein by reference.

The present disclosure relates to a substrate processing system, more specifically to an edge coupling ring of a substrate processing system, and more specifically to a detection system for an edge coupling ring of a substrate processing system. More specifically, the present disclosure relates to a detection system for detecting the position and/or condition of an edge coupling ring of a substrate processing system.

The prior art presented in this article is generally used to present the background of the present disclosure. Within the scope of the achievements described in this prior art section, the achievements of the inventor of this case and the implementation modes that are not qualified as prior art at the time of application are not directly or indirectly recognized as prior art against the present disclosure.

Substrate processing systems may be used to perform etching and/or other processing of substrates, such as semiconductor wafers. The substrate may be disposed on a susceptor in a processing chamber of the substrate processing system. For example, during etching in a plasma etcher, a gas mixture including one or more precursors is introduced into the processing chamber and plasma is triggered to etch the substrate.

Edge coupling rings have been used to adjust the etch rate and/or etch profile of a plasma near the radially outer edge of a substrate. The edge coupling ring is typically located on a pedestal, surrounding the radially outer edge of the substrate. Processing conditions at the radially outer edge of the substrate can be modified by varying: the location of the edge coupling ring, the shape or profile of the inner edge of the edge coupling ring, the height of the edge coupling ring relative to the upper surface of the substrate, the material of the edge coupling ring, etc.

Changing the edge coupling ring requires opening the process chamber, which is undesirable. In other words, the edge coupling effect of the edge coupling ring cannot be changed without opening the process chamber. When the edge coupling ring is eroded by plasma during etching, the edge coupling effect changes. Correcting the erosion of the edge coupling ring requires opening the process chamber to replace the edge coupling ring.

Referring now to FIGS. 1-2 , a substrate processing system may include a pedestal 20 and an edge coupling ring 30. The edge coupling ring 30 may include a single component, or two or more components. In the example of FIGS. 1-2 , the edge coupling ring 30 includes a first annular portion 32 disposed near a radially outer edge of a substrate 33. A second annular portion 34 is radially inward from the first annular portion and is located below the substrate 33. A third annular portion 36 is disposed below the first annular portion 32. During use, plasma 42 is directed at the substrate 33 to etch exposed portions of the substrate 33. The edge coupling ring 30 is configured to help shape the plasma so as to uniformly etch the substrate 33.

2 , after edge coupling ring 30 has been applied, the radially inner upper surface of edge coupling ring 30 may exhibit erosion, as indicated at 48. As a result, plasma 42 may tend to etch the radially outer edge of substrate 33 at a faster rate than the radially inner portion of substrate 33, as seen at 44.

In a substrate processing system, one or more portions of an edge coupling ring may be moved vertically and/or horizontally relative to a substrate or susceptor. The movement varies the edge coupling effect of a plasma relative to a substrate during etching or other substrate processing without opening the processing chamber.

Referring now to FIGS. 3-5 , a substrate processing system includes a pedestal 20 and an edge coupling ring 60. The edge coupling ring 60 may be comprised of a single portion, or two or more portions may be used. In the example of FIGS. 3-5 , the edge coupling ring 60 includes a first annular portion 72 disposed radially outward of the substrate 33. A second annular portion 74 is radially inward from the first annular portion 72 and below the substrate 33. A third annular portion 76 is disposed below the first annular portion 72.

As will be further described below, the actuator 80 can be configured in various positions to move one or more portions of the edge coupling ring 60 relative to the substrate 33. By way of example only, in FIG. 3 , the actuator 80 is disposed between the first annular portion 72 of the edge coupling ring 60 and the third annular portion 76 of the edge coupling ring 60. In some examples, the actuator 80 can include a piezoelectric actuator, a stepper motor, a pneumatic drive, or other suitable actuator. In some examples, one, two, three, or four, or more actuators are used. In some examples, a plurality of actuators are uniformly configured around the edge coupling ring 60. The actuator 80 can be configured inside or outside the processing chamber.

During use, plasma 82 is directed at substrate 33 to etch exposed portions of substrate 33. Edge coupling ring 60 is configured to help shape the plasma electric field to uniformly etch substrate 33. As shown at 84 and 86 in FIG. 4, one or more portions of edge coupling ring 60 may be eroded by plasma 82. Due to the erosion, non-uniform etching of substrate 33 may occur near the radially outer edge of substrate 33. Typically, it is necessary to stop the process, open the process chamber, and replace the edge coupling ring.

In FIG5 , the actuator 80 is used to move one or more portions of the edge coupling ring 60 to change the position of one or more portions of the edge coupling ring 60. For example, the actuator 80 may be used to move the first annular portion 72 of the edge coupling ring 60. In this example, the actuator 80 moves the first annular portion 72 of the edge coupling ring 60 in an upward or vertical direction so that an edge 86 of the first annular portion 72 of the edge coupling ring 60 is higher than the radially outer edge of the substrate 33. Therefore, the etching uniformity near the radially outer edge of the substrate 33 is improved.

Referring now to FIG. 6 , as can be appreciated, the actuator can be configured in one or more other positions and can be moved in other directions, such as horizontally, diagonally, etc. Horizontal movement of a portion of the edge coupling ring can be performed to center the edge coupling effect relative to the substrate. In FIG. 6 , the actuator 110 is configured radially outward of the edge coupling ring 60. In addition, the actuator 110 moves in the vertical (or up/down) direction, as well as in the horizontal (or side to side) direction. Horizontal repositioning can be used when etching of the substrate shows that the edge coupling ring is horizontally offset relative to the substrate. The horizontal offset can be corrected without opening the processing chamber. Likewise, tilting of the edge-coupled rings may be performed by operating some actuators differently than other actuators to correct or create side-to-side asymmetry.

Instead of having the actuator 110 located between the annular portions of the edge coupling rings, the actuator 110 may also be attached to the radial outer wall or other structure indicated at 114. Alternatively, the actuator 110 may be supported from below by the wall or other structure indicated at 116.

Referring now to FIGS. 7-8 , another example of an edge coupling ring 150 and a piezoelectric actuator 154 is shown. In this example, the piezoelectric actuator 154 moves the edge coupling ring 150. The piezoelectric actuator 154 is mounted in the first annular portion 72 and the third annular portion 76 of the edge coupling ring 150. In FIG. 8 , the piezoelectric actuator 154 moves the first annular portion 72 of the edge coupling ring 150 to adjust the position of the edge 156 of the first annular portion 72.

Keeping the processing chamber closed can cause difficulty in observing the condition of the edge coupling ring and subsequent difficulty in determining when to adjust the position of the ring to compensate for erosion and when to replace the ring.

Additionally, there may be difficulty in properly positioning and/or aligning the edge coupling ring when replacing the edge coupling ring.

A substrate processing system includes a processing chamber. The processing chamber has a covered opening through which conditions in the chamber can be observed and/or measured, including the condition and/or position of an edge coupling ring, which is arranged near a pedestal in the processing chamber and surrounds the radial outer edge of the substrate. A detection system is provided to detect the condition and/or position of the edge coupling ring.

In one feature, the detection system includes a camera having optical components suitable for observing the condition of the edge coupling ring without opening the processing chamber.

In one feature, the apparatus includes a laser interferometer to measure the profile of the edge coupling ring without opening the processing chamber.

Depending on the conditions being observed and/or measured, for example, in response to erosion of a plasma-facing surface of the edge coupling ring, an actuator is used to selectively move a first portion of the edge coupling ring relative to a substrate to change an edge coupling profile of the edge coupling ring without opening the processing chamber.

In other features, the actuator is used to move the first portion of the edge coupling ring relative to a second portion of the edge coupling ring.

In other features, a controller is used to move the edge coupling ring in response to erosion of the plasma-facing surface of the edge coupling ring. The controller automatically moves the edge coupling ring after the edge coupling ring is exposed to a predetermined number of etching cycles. The controller automatically moves the edge coupling ring after the edge coupling ring is exposed to etching for a predetermined time.

In other features, the actuator moves the first portion of the edge coupling ring in a vertical direction relative to the substrate. The actuator moves the first portion of the edge coupling ring in a horizontal direction relative to the substrate. A sensor or detector is used to communicate with the controller and detect erosion of the edge coupling ring.

In other features, the detector is a camera mounted outside the processing chamber and aimed at the edge coupling ring through a side window of the chamber.

In other features, the camera can use plasma illumination, or use external illumination to provide images or other information of the condition and/or position of the edge coupling ring. In other features, the external illumination can be provided through the same side window used for camera aiming, or can be provided through a different side window.

In other features, the detection system includes a controller that adjusts the position and/or focus of the camera. In other features, the controller that moves the actuator also adjusts the position and/or focus of the camera. The camera is used to communicate with the controller, and the controller adjusts the position and/or focus of the camera. In response to edge coupling ring status information from the camera, the controller operates the actuator to adjust the position of the edge coupling ring relative to the substrate. In response to edge coupling ring status information from the camera, the controller operates the actuator to move the edge coupling ring in a vertical direction. In response to the edge coupling ring position information from the camera, the controller operates the actuator to move the edge coupling ring in the horizontal direction. In response to the edge coupling ring orientation information from the camera, the controller operates the actuator to move one side of the edge coupling ring relative to the other side.

In other features, a robotic arm is used to communicate with the controller and adjust the position of the sensor. The sensor includes a depth gauge. The sensor includes a laser interferometer. The actuator selectively tilts the edge coupling ring relative to the substrate. The actuator is located outside the processing chamber. A rod-shaped member passes through a wall of the processing chamber to connect the actuator to the edge coupling ring.

In other features, a seal is disposed between the rod member and the wall of the processing chamber. A controller is used to move the edge coupling ring to a first position for performing a first process of the substrate using a first edge coupling effect, and then to a second position for performing a second process of the substrate using a second edge coupling effect.

A method for adjusting an edge coupling profile of an edge coupling ring in a substrate processing system includes disposing an edge coupling ring near a pedestal in a processing chamber. The edge coupling ring is configured to surround a radial outer edge of the substrate. The method includes using an actuator to selectively move a first portion of the edge coupling ring relative to the substrate to change the edge coupling profile of the edge coupling ring.

In other features, the method includes delivering a process gas and a carrier gas to the process chamber. The method includes generating a plasma in the process chamber to etch the substrate. The method includes using an actuator to move the first portion of the edge coupling ring relative to the substrate without opening the process chamber. The edge coupling ring further includes a second portion. The actuator is used to move the first portion of the edge coupling ring relative to the second portion of the edge coupling ring. The actuator is selected from the group consisting of a piezoelectric actuator, a stepper motor actuator, and a pneumatically driven actuator.

In other features, the method includes moving the edge coupling ring in response to etching of a plasma-facing surface of the edge coupling ring. The method includes automatically moving the edge coupling ring after the edge coupling ring is exposed to a predetermined number of etching cycles. The method includes automatically moving the edge coupling ring after the edge coupling ring is exposed to etching for a predetermined time. The method includes moving the first portion of the edge coupling ring in a vertical direction relative to the substrate. The method includes moving the first portion of the edge coupling ring in a horizontal direction relative to the substrate.

In other features, the method includes moving the first portion of the edge coupling ring in a vertical direction relative to the substrate. The method includes moving the first portion of the edge coupling ring in a horizontal direction relative to the substrate. A sensor or detector is used to communicate with the controller and detect erosion of the edge coupling ring.

In other features, the method includes using a camera to sense erosion of the edge coupling ring. The method includes using images from the camera to adjust the position of the edge coupling ring. The method includes operating the actuator to adjust the position of the edge coupling ring relative to the substrate in response to position information provided by the camera. The method includes operating the actuator to move the edge coupling ring in a vertical direction in response to information provided by the camera about the condition of the edge coupling ring. The method includes operating the actuator to move the edge coupling ring in a horizontal direction in response to information provided by the camera about the position of the edge coupling ring. The method includes, in response to information provided by the camera about the position of the edge coupling ring, operating the actuator to move one side of the edge coupling ring relative to the other side.

In other features, the method includes using a sensor to sense erosion of the edge coupling ring. The sensor is selected from the group consisting of a depth gauge and a laser interferometer. The method includes selectively tilting the edge coupling ring relative to the substrate. The actuator is located outside the processing chamber.

In other features, the method includes moving the edge coupling ring to a first position to perform a first processing of the substrate using a first edge coupling effect, and moving the edge coupling ring to a second position to perform a second processing of the substrate using a second edge coupling effect.

Further application scope of the present disclosure will become apparent from the implementation, application scope and drawings. The implementation and specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure.

Referring now to FIG. 9 , an example of a substrate processing chamber 500 for performing etching using RF plasma is shown. The substrate processing chamber 500 includes a processing chamber 502 that surrounds the other components of the substrate processing chamber 500 and contains the RF plasma. The substrate processing chamber 500 includes an upper electrode 504 and a pedestal 506 that includes a lower electrode 507. An edge coupling ring 503 is supported by the pedestal 506 and is configured to surround a substrate 508. One or more actuators 505 may be used to move the edge coupling ring 503. During operation, a substrate 508 is disposed on the pedestal 506 between the upper electrode 504 and the lower electrode 507.

By way of example only, the upper electrode 504 may include a showerhead 509 that introduces and distributes the process gas. The showerhead 509 may include a handle that includes one end connected to the top surface of the processing chamber. The base is generally cylindrical and extends radially outward from an opposite end of the handle at a position separated from the top surface of the processing chamber. The surface or panel of the base of the showerhead that faces the substrate includes a plurality of holes through which the process gas or purge gas flows. Alternatively, the upper electrode 504 may include a conductive plate and the process gas may be introduced in another manner. The lower electrode 507 may be disposed in a non-conductive base. Alternatively, the base 506 may include an electrostatic chuck that includes a conductive plate as the lower electrode 507.

The RF generation system 510 generates and outputs an RF voltage to one of the upper electrode 504 and the lower electrode 507. The other of the upper electrode 504 and the lower electrode 507 can be DC grounded, AC grounded, or floating. As an example only, the RF generation system 510 can include an RF voltage generator 511 that generates an RF voltage that is supplied to the upper electrode 504 or the lower electrode 507 through a matching and distribution network 512. In other examples, the plasma can be generated inductively or remotely.

The gas delivery system 530 includes one or more gas sources 532-1, 532-2, ..., and 532-N (collectively referred to as gas sources 532), where N is an integer greater than 0. The gas sources supply one or more precursors and mixtures thereof. The gas sources may also supply purge gas. Vaporized precursors may also be used. The gas sources 532 are connected to the manifold 540 via valves 534-1, 534-2, ..., 534-N (collectively referred to as valves 534) and mass flow controllers 536-1, 536-2, ..., 536-N (collectively referred to as mass flow controllers 536). The output of the manifold 540 is supplied to the processing chamber 502. By way of example only, the output of the manifold 540 is supplied to the showerhead 509.

Heater 542 may be connected to a heater coil (not shown) disposed in pedestal 506. Heater 542 may be used to control the temperature of pedestal 506 and substrate 508. Valve 550 and pump 552 may be used to evacuate reactants from processing chamber 502. Controller 560 may be used to control components of substrate processing chamber 500. Controller 560 may also be used to control actuator 505 to adjust the position of one or more portions of edge coupling ring 503.

Robot arm 570 and sensor 572 can be used to measure erosion of the edge coupling ring. In some examples, sensor 572 can include a depth gauge. Robot arm 570 can move the depth gauge into contact with the edge coupling ring to measure the erosion. Alternatively, a laser interferometer (with or without robot arm 570) can be used to measure erosion without direct contact. Robot arm 570 can be omitted if the laser interferometer can be positioned in direct line of sight with the edge coupling ring.

Referring now to FIG. 10 , an example of a method 600 for operating an actuator to move an edge coupling ring is shown. At step 610 , at least a portion of the edge coupling ring is positioned in a first position relative to a substrate. At step 614 , a substrate processing system is operated. The operation may include etching or other processing of the substrate. At step 618 , the control determines whether etching has been performed for a predetermined time, or a predetermined number of etching cycles. If the predetermined time or number of cycles has not been exceeded, as determined at step 618 , the control returns to step 614 .

When the predetermined time or number of cycles is reached, the control unit determines in step 624 whether the maximum predetermined etching time has been reached, whether the maximum number of etching cycles has been performed, and/or whether the actuator has made a maximum movement.

If step 624 is "no" (false), the control unit uses the actuator to move at least a portion of the edge coupling ring. The movement of the edge coupling ring can be performed automatically, manually, or a combination thereof without opening the processing chamber. If step 624 is "yes" (true), the control unit sends a message or otherwise indicates that the edge coupling ring should be maintained/replaced.

Referring now to FIG. 11 , an example of a method 700 for operating an actuator to move an edge coupling ring is shown. At step 710, at least a portion of the edge coupling ring is positioned in a first position relative to a substrate. At step 714, a substrate processing system is operated. The operation may include etching or other processing of the substrate. At step 718, control utilizes a sensor (e.g., a depth gauge or laser interferometer) to determine whether a predetermined amount of erosion has occurred on the edge coupling ring. If step 718 is negative, control returns to step 714.

When a predetermined amount of erosion has occurred, control determines at step 724 whether a maximum amount of erosion has occurred. If step 724 is no, control moves at least a portion of the edge coupling ring using an actuator. Movement of the edge coupling ring may be performed automatically, manually, or a combination thereof without opening the processing chamber. If step 724 is yes, control sends a message or otherwise indicates that the edge coupling ring should be maintained/replaced.

In addition to the above, the need to move the edge coupling ring may be determined based on inspection of the etched pattern of the processed substrate. The actuator may be used to adjust the edge coupling profile of the edge coupling ring without opening the chamber.

Referring now to FIG. 12 , a processing chamber 800 includes an edge coupling ring 60 disposed on a base 20. The edge coupling ring 60 includes one or more portions that are movable by one or more actuators 804 that are disposed outside the processing chamber 800. In this example, portion 72 is movable. The actuator 804 may be connected to portion 72 of the edge coupling ring 60 by a mechanical linkage 810. For example, the mechanical linkage 810 may include a rod-like member. The mechanical linkage 810 may pass through a hole 811 in a wall 814 of the processing chamber 800. A seal 812, such as an O-ring, may be used. The mechanical linkage 810 may pass through a hole 815 in one or more structures (eg, portion 76 of edge coupling ring 60).

Referring now to FIGS. 13A and 13B , the side-to-side tilt of the edge coupling ring 830 is shown. The side-to-side tilt can be used to correct for side-to-side misalignment. In FIG. 13A , portions 830-1 and 830-2 of the edge coupling ring 830 are on opposite sides of the substrate and are arranged in a first arrangement 840. Generally, portions 830-1 and 830-2 can be aligned with portions 832-1 and 832-2 of the edge coupling ring 830. Actuators 836-1 and 836-2 are arranged between portions 830-1 and 832-1, and between 830-2 and 832-2, respectively.

13B, actuators 836-1 and 836-2 move individual portions of edge coupling ring 830 so that edge coupling ring 830 moves to a second setting 850 that is different from the first setting 840 shown in FIG13A. As can be appreciated, the substrate can be inspected after processing and the tilt relative to the substrate can be adjusted as needed without opening the processing chamber.

Referring now to FIG. 14 , a method 900 for moving an edge coupling ring during substrate processing is shown. In other words, different processes may be performed on a single substrate in the same processing chamber. The edge coupling effect of the edge coupling ring may be adjusted between multiple processes performed on a substrate in the same processing chamber before proceeding to a subsequent substrate. In step 910 , a substrate is positioned on a pedestal and the position of the edge coupling ring is adjusted as necessary. In step 914 , processing of the substrate is performed. If processing of the substrate is complete, as determined in step 918 , the substrate is removed from the pedestal in step 922 . In step 924 , the control determines whether another substrate needs to be processed. If step 924 is "yes", the method returns to step 910. Otherwise, the method terminates.

If step 918 is no, and the substrate requires additional processing, the method determines whether the edge coupling ring requires adjustment at step 930. If step 930 is no, the method returns to step 914. If step 930 is yes, at step 934 at least a portion of the edge coupling ring is moved using one or more actuators, and the method returns to step 914. As can be appreciated, the edge coupling ring can be adjusted between multiple processing of the same substrate in the same processing chamber.

Referring now to FIG. 15 , edge coupling ring 1014 and lift ring 1018 are disposed near and around the upper surface of pedestal 1010. As described above, edge coupling ring 1014 includes a radially inner edge that is disposed near the substrate during etching. Lift ring 1018 is disposed below at least a portion of edge coupling ring 1014. Lift ring 1018 is used to lift edge coupling ring 1014 above the surface of pedestal 1010 when edge coupling ring 1014 is removed using a robotic arm. Edge coupling ring 1014 can be removed without opening the processing chamber to atmospheric pressure. In some examples, the lifting ring 1018 may optionally include openings 1019 between circumferentially spaced ends 1020 to provide clearance for a robotic arm to remove the edge coupling ring 1014, as described below.

16-17, examples of edge coupling ring 1014 and lift ring 1018 are shown in greater detail. In the example shown in FIG. 16, the base may include an electrostatic chuck (ESC), which is generally indicated at 1021. ESC 1021 may include one or more stacked plates, such as ESC plates 1022, 1024, 1030, and 1032. ESC plate 1030 may correspond to the middle ESC plate, and ESC plate 1032 may correspond to the ESC base plate. In some examples, O-ring 1026 may be disposed between ESC plates 1024 and 1030. Although a specific base 1010 is shown, other types of bases may be used.

The bottom edge coupling ring 1034 may be disposed below the edge coupling ring 1014 and the lifting ring 1018. The bottom edge coupling ring 1034 may be disposed near and radially outward of the ESC plates 1024, 1030, 1032 and the O-ring 1026.

In some examples, edge coupling ring 1014 may include one or more self-centering features 1040, 1044, 1046. By way of example only, self-centering features 1040 and 1044 may be triangular, concave self-centering features, although other shapes may be used. Self-centering feature 1046 may be a tilted surface. Lift ring 1018 may include one or more self-centering features 1048, 1050, 1051. By way of example only, self-centering features 1048 and 1050 may be triangular, concave self-centering features, although other shapes may be used. Self-centering feature 1051 may be a tilted surface having a shape that is complementary to self-centering feature 1046. The self-centering feature 1048 on the lifting ring 1018 can mate with the self-centering feature 1044 on the edge coupling ring 1014. The self-centering feature 1050 on the lifting ring 1018 can mate with the self-centering feature 1052 on the bottom edge coupling ring 1034.

The lifting ring 1018 further includes a protrusion 1054 extending radially outward. A groove 1056 can be disposed on a bottom-facing surface 1057 of the protrusion 1054. The groove 1056 is configured to be offset by one end of a support 1060, which is connected to an actuator 1064 and selectively moved in a vertical direction by the actuator 1064. The actuator 1064 can be controlled by a controller. As can be appreciated, although a single groove, support, and actuator are shown, additional grooves, supports, and actuators can be disposed in a spaced relationship in a circumferential direction around the lifting ring 1018 to offset the lifting ring 1018 in an upward direction.

In FIG. 17 , the edge coupling ring 1014 is shown being lifted in an upward direction by the lift ring 1018 using support(s) 1060 and actuator(s) 1064. The edge coupling ring 1014 can be removed from the processing chamber by a robot arm. Specifically, the robot arm 1102 is connected to the edge coupling ring 1014 by a support 1104. The support 1104 can include a self-centering feature 1110 that mates with the self-centering feature 1040 on the edge coupling ring 1014. As can be appreciated, the robot arm 1102 and support 1104 can deflect the edge coupling ring upward to clear the self-centering feature 1048 on the lift ring 1018. Then, the robot arm 1102, the holder 1104, and the edge coupling ring 1014 can be moved out of the processing chamber. The robot arm 1102, the holder 1104, and the new edge coupling ring can be returned and positioned on the lifting ring 1018. Then, the lifting ring 1018 is lowered. The reverse operation can be used to transfer the new edge coupling ring 1014 to the lifting ring 1018.

Alternatively, rather than lifting the robot arm 1102 and support 1104 upward to lift the edge coupling ring 1014 off the lift ring 1018, the robot arm 1102 and support 1104 can be positioned below and in contact with the raised edge coupling ring 1014. The lift ring 1018 is then lowered with the edge coupling ring 1014 remaining on the robot arm 1102 and support 1104. The robot arm 1102, support 1104, and edge coupling ring 1014 can be removed from the processing chamber. The reverse operation can be used to transfer a new edge coupling ring 1014 onto the lift ring 1018.

Referring now to FIGS. 18-20 , a movable edge coupling ring 1238 and lift ring 1018 are shown. In FIG. 18 , one or more posts 1210 are moved up and down by one or more actuators 1214 through holes 1220, 1224, 1228, which are located in the ESC base plate 1032, the bottom edge coupling ring 1034, and the lift ring 1018, respectively. In this example, an intermediate edge coupling ring 1240 or spacer is disposed between the movable edge coupling ring 1238 and the lift ring 1018. The intermediate edge coupling ring 1240 may include self-centering features 1244 and 1246. A corresponding self-centering feature 1248 may be disposed on the movable edge coupling ring 1238. The self-centering feature 1248 cooperates with the self-centering feature 1246 on the middle edge coupling ring 1240.

As described in detail above, during use, the upward surface of the movable edge coupling ring 1238 may be eroded. This may then change the profile of the plasma. The use of the support 1210 and the actuator 1214 allows the movable edge coupling ring 1238 to be selectively moved in an upward direction to change the profile of the plasma. In Figure 19, the movable edge coupling ring 1238 of Figure 18 is shown in a raised position. The intermediate edge coupling ring 1240 may remain stationary. Finally, the movable edge coupling ring 1238 may be moved one or more times, and then the edge coupling ring 1238 and the intermediate edge coupling ring 1240 may be replaced.

20 , the actuator 1214 is returned to the lowered state, and the actuator 1064 is moved to the raised state. The edge coupling ring 1238 and the middle edge coupling ring 1240 are raised by the lifting ring 1018 , and the movable edge coupling ring 1238 can be removed by the robot arm 1102 and the support 1104 .

As can be appreciated, the actuator can be located within the processing chamber, or outside the processing chamber. In some examples, the edge coupling ring can be provided to the chamber via a cassette, load chamber, transfer chamber, and the like. Alternatively, the edge coupling ring can be stored outside the processing chamber, but inside the substrate processing tool.

Referring now to FIGS. 21-22 , in some examples, the lift ring may be omitted. The edge coupling ring 1310 is disposed on the radially outer edge of the bottom edge coupling ring 1034 and the base. The edge coupling ring 1310 may include one or more self-centering features 1316 and 1320. The edge coupling ring 1310 may further include a groove 1324 for receiving a top surface of a support post 1210, which is offset by the actuator 1214. The self-centering feature 1320 may be configured to abut a corresponding self-centering feature 1326 of the bottom edge coupling ring 1034. In some examples, the self-centering features 1320 and 1326 are beveled.

In FIG. 22 , the actuator 1214 and the support 1210 bias the edge coupling ring 1310 upward to remove the edge coupling ring 1310 after erosion has occurred or to adjust the plasma profile. The robot arm 1102 and the support 1104 can be moved to a position below the edge coupling ring 1310. The self-centering feature 1110 on the support 1104 connected to the robot arm 1102 can engage the self-centering feature 1316. The robot arm 1102 moves in an upward direction to provide clearance between the groove 1324 and the support 1210, or the support 1210 is moved downward by the actuator 1214 to provide clearance for the groove 1324.

Referring now to FIG. 23 , a method 1400 is shown for replacing an edge coupling ring without opening a processing chamber to atmospheric pressure. At step 1404, the method determines whether the edge coupling ring is on a lift ring. If step 1404 is no, the method uses a robot arm to move the edge coupling ring to a position on the lift ring at step 1408. After the edge coupling ring is on the lift ring in the processing chamber, processing is performed at step 1410. At step 1412, the method uses any of the above criteria to determine whether the edge coupling ring is worn. If step 1412 is no, the method returns to step 1410 and processing may be performed again. If the edge coupling ring is determined to be worn in step 1412, the edge coupling ring is replaced in step 1416 and the method continues in step 1410.

Referring now to FIG. 24 , method 1500 adjusts the position of the movable edge coupling ring as needed to compensate for erosion, and selectively replaces the movable edge coupling ring when the movable edge coupling ring is determined to be worn. At step 1502 , the method determines whether the movable edge coupling ring is located on a lifting ring. If step 1502 is no, the edge coupling ring is moved to a position on the lifting ring at step 1504 , and the method continues at step 1502 .

If step 1502 is yes, the method determines in step 1506 whether the position of the movable edge coupling ring needs to be adjusted. If step 1506 is yes, the method adjusts the position of the movable edge coupling ring using the actuator, and then the method returns to step 1506. When step 1506 is no, the method performs processing in step 1510. In step 1512, the method determines whether the movable edge coupling ring is worn. If not, the method returns to step 1510.

If step 1512 is yes, the method determines if the movable edge coupling ring is in the uppermost (or fully adjusted) position at step 1520. If step 1520 is no, the method adjusts the position of the movable edge coupling ring using actuator 1214 at step 1524, and the method returns to step 1510. If step 1520 is yes, the method uses actuator 1064, lift ring 1018, and robot arm 1102 to replace the movable edge coupling ring.

Referring now to FIG. 25 , a method 1600 for replacing an edge coupling ring without opening a processing chamber to atmospheric pressure is shown. At step 1610, the lift ring and edge coupling ring are deflected upward using an actuator. At step 1620, a robot arm and support are moved under the edge coupling ring. At step 1624, the robot arm is moved upward to clear the self-centering feature of the edge coupling ring, or the lift ring is moved downward. At step 1628, the robot arm with the edge coupling ring is moved out of the processing chamber. At step 1632, the edge coupling ring is separated from the robot arm. At step 1636, the robot arm picks up a replacement edge coupling ring. At step 1638, the edge coupling ring is positioned on the lifting ring and aligned using one or more self-centering features. At step 1642, the robot arm is lowered so that the self-centering features have sufficient clearance and the robot arm is removed from the chamber. At step 1646, the lifting ring and edge coupling ring are lowered into position.

Referring now to FIG. 26 , features for detecting the condition and position of an edge coupling ring will be described. This portion of the description focuses on the detector and detection method according to the features of the present invention, which are capable of directly measuring the height and erosion of the edge coupling ring. Details of the various components of the processing chamber, including the ESC, edge coupling ring, controller, and actuator, have been previously presented and will not be repeated here for the purpose of brevity and clarity.

In FIG. 26 , a processing chamber 1710 has a window 1715 located above the top of the chamber. A pedestal 1720 in the chamber 1710 has an electrostatic chuck (ESC) 1725 mounted thereon. Adjacent the ESC 1725 are actuator mechanisms 1730, 1735 that move an edge coupling ring 1740 in a horizontal and/or vertical direction as previously described. One or both of the actuator mechanisms 1730, 1735 may be mounted as described with respect to the previous figures. A wafer 1750 is positioned on the ESC 1725 within the edge coupling ring 1740.

The camera 1760 is mounted on an attachment mechanism 1765 to view the edge coupling ring 1740 through a side viewing window 1770 in the chamber 1710. The attachment mechanism 1765 can be a bracket, a docking mechanism, or other suitable attachment mechanism that enables the camera 1760 to move vertically and/or horizontally relative to the side viewing window 1770 and enables the camera 1760 to properly focus on the appropriate portion of the edge coupling ring 1740. In one feature, the side viewing window 1770 includes a baffle 1775 to protect the material in the window during wafer processing. In one feature, a pneumatic gate valve is used to operate the baffle 1775.

In one feature, as shown, the attachment mechanism 1765 mounts the camera 1760 on the chamber 1710. In another feature, the attachment mechanism 1765 mounts the camera 1760 on a structure proximate to the chamber 1710.

In some features, a controller (shown in previous figures) controls actuation, focus, and positioning of camera 1760. In some features, a different controller 1800 provides one or more of actuation, focus, and positioning of the camera. In some features, the camera itself provides its own focus mechanism, but one of the controllers described herein supplements the camera's own focus based on individual analysis of the images provided.

Among other features, camera 1760 is mounted to allow viewing through window 1715. In Figure 26, camera 1760 is shown focused on the inner edge of edge coupling ring 1740. Edge coupling ring 1740 is depicted in a new state, when installed in chamber 1710.

Camera 1760 has sufficient resolution (e.g., number of pixels) to produce an image of suitable size to determine the condition and location of edge coupling ring 1740 and provide direct measurement of ring height and ring erosion. In some features, the camera is operated in macro (close-up) mode, using a macro lens. In other features, the lens may be an optical zoom lens providing appropriate magnification. Any combination of number of pixels and magnification (macro, optical zoom or digital zoom, in some features) that can produce sufficient information (e.g., image) to determine the condition and location of the ring will be acceptable. In some features, high dynamic range (HDR) imaging may be used in conjunction with macro and/or zoom photography to operate camera 1760.

In one feature, in order to have enough light in the chamber 1710 to illuminate the edge ring 1740, the plasma light is good enough. In other features, an external light source is provided, such as a light emitting diode (LED) light source. In FIG. 27, in addition to the elements shown in FIG. 26, in some features, an external lighting device 1780 provides lighting within the chamber 1710. In one feature, as shown, an attachment mechanism 1785 mounts the lighting device 1780 on the chamber 1710. In another feature, the attachment mechanism 1785 mounts the lighting device 1780 on a structure near the chamber 1710. In one feature, the lighting device 1780 is attached to the camera 1760. Depending on the various features, the attachment is mechanical, or electrical, or both. In some features, an additional side window 1790 is provided through which the illumination device 1780 shines light into the chamber 1710. The attachment mechanism 1785 can be a bracket, a docking mechanism, or other suitable attachment mechanism that enables the illumination device 1780 to move vertically and/or horizontally relative to the side window 1790. In some features, the additional side window 1790 is on the same side of the chamber 1710 as the side window 1770. In other features, the additional side window 1790 is on a different side of the chamber 1710 than the side window 1770. In one feature, the side window 1790 includes a baffle 1795 to protect materials in the window during wafer processing. In one feature, a pneumatic shutter is used to operate the baffle 1795. In still other features, the lighting device 1780 shines light through the same side window 1770 as the camera 1760, and a separate side window 1790 is not required in this example.

In order to easily illustrate the two side windows 1770, 1790, the chamber 1710 in Figure 27 is depicted as being slightly higher than in Figure 26, but in some features, the chambers in both figures have the same size. If plasma light is used as the light source, the additional side window 1790 is not required.

During operation, the focus and/or positioning of camera 1760 may drift. In one feature, controller 1800 monitors the focus and/or positioning of camera 1760 and makes appropriate adjustments.

FIG. 28 has all of the same elements as FIG. 27 , except that the edge coupling ring 1740′ is shown as being eroded and having an inner diameter that is shorter than the outer diameter. As previously described, this erosion or etching occurs as the wafer processing system processes more and more wafers. Also as previously described, if the images provided by camera 1760 indicate that the edge coupling ring is too eroded to perform its function of controlling etching at the edge of the wafer, controller 560 controls one or both of actuators 1730, 1735 to move edge coupling ring 1740′ in the vertical direction appropriately. In one feature, controllers 560 and 1800 communicate with each other so that controller 560 operates the appropriate actuator in response to image data from controller 1800.

Fig. 29A is an enlarged view of the opening 1015 in the sleeve 1012 shown in the top view of Fig. 15. The opening appears in the side view of the sleeve. The sleeve 1012 serves as a fixed reference on which a camera can focus to capture images of the position and condition of the edge coupling ring.

Figures 29B and 29C show images of good and poor edge coupling ring placement, respectively, relative to the opening 1015 in the sleeve 1012. In these figures, the edge coupling ring is at the bottom of each image. The dark portion in each figure is part of the opening 1015. The consistency of the height of the dark portion indicates the quality of the placement. In one feature, the height of the dark portion is determined by counting the number of vertical dark pixels along the vertical axis at the center of the dark portion. In Figure 29B, the height of the dark portions and the size of these portions are relatively equal, indicating that the edge coupling ring is properly placed. In Figure 29C, the height of the dark portions is inconsistent, and the height of the dark portions on the right hand side of the figure is relatively short, indicating that the edge coupling ring is tilted.

30A-C show original images taken in the chamber with various heights and conditions of the edge coupling ring 1740. FIG. 30A shows the condition of a new edge coupling ring with heights of 3.0, 3.2, 3.4, 3.6, 3.8 and 4.0 mm, as seen in six images that are placed side by side to form FIG. 30A. FIG. 30B shows the condition of a worn edge coupling ring before realignment and rise, at the same height as in FIG. 30A. FIG. 30C shows the condition of a worn edge coupling ring after realignment and rise, at the same height as in FIGS. 30A and 30B.

In one feature, raw images such as those shown in FIGS. 30A-30C can be used in a first example to calibrate a camera by viewing several different ring heights and ring conditions, using the opening 1015 in the sleeve 1012 of FIG. 15 as a fixed reference. In one feature, calibration can be performed as follows. Initially, when a new edge coupling ring is installed, images can be taken at several different ring heights, for example, using one or more actuators to raise or lower the ring. The different heights of the ring are measured (in pixels), and those measurements are compared to physical measurements to provide an estimation method to enable calibration of the transition edge sensor (TES), and thereby calibrate the camera. Calibration may help to deal with camera drift, either in focus or in focal length (magnification level). Drift in magnification, for example, can cause changes in height measurement results due to a change in the correlation between the number of pixels and the number of µm.

FIG. 31 depicts another way to directly measure the erosion of an edge coupling ring. In FIGS. 26-28 , camera 1760 is aimed directly at the inner edge of the edge coupling ring. However, with this viewing method, the camera may tend to provide an image of the entire upper surface of the edge coupling ring, and thus may hide or obscure the actual amount of erosion. The height of the inner edge of the edge coupling ring becomes difficult to measure because it is difficult to distinguish the edge from the rest of the upper surface of the ring. The image may appear blurry. It is desirable to clearly view the front edge in order to measure its height (in number of pixels, converted to height units, such as µm), and thereby determine the extent of the erosion.

To this end, in FIG. 31 , camera 1760 may obtain a reflection of the interior of the edge coupling ring, rather than observing the interior of the edge coupling ring directly. The reflection may be from the surface of the ESC 1725, or from the surface of the wafer 1750. Either or both surfaces may have reflective properties. The reflection is observed, and then camera 1760 obtains a reflection 1840' of the edge coupling ring 1840. (The dotted line shows the eroded portion 1845 and its "reflection" 1845.)

By looking at the reflection of the edge coupling ring rather than the ring itself, perspective problems are avoided. The height of the inner edge of the edge coupling ring can be directly measured to more clearly determine the condition of the edge coupling ring in some cases.

There may be limits to the detectability of ring erosion, even from observing reflections from an edge-coupling ring. Because the erosion occurs on the inside of the edge-coupling ring, the erosion reduces the height of the inner edge of the ring relative to the outer edge. The greater the reduction, the more the upper surface of the ring actually tilts. At some point, the degree of "tilt" may be so great that it is difficult to distinguish the inner edge of the ring in the reflection, making it difficult to measure the height of the inner edge, and therefore the extent of the erosion. Not being able to determine the extent of erosion may result in adjusting the ring height too quickly or too slowly using the actuator, or even replacing the ring. As a result, the edge coupling ring will be replaced too soon, wasting the useful life of the ring, or the ring will be lifted or replaced too late, causing a change in the etch profile near the radially outward edge of the wafer. In one feature, compensation can be made by increasing the angle at which camera 1760 views the reflected image as etching progresses.

FIG. 32 depicts a method for placing an edge coupling ring using an image from a camera. After the method begins at step 1910, at step 1920, a robotic arm mounts the edge coupling ring on an ESC. At step 1930, the camera is focused to identify the inner edge of the ring. As previously described, the camera can be focused on the inner edge of the edge coupling ring, or on a reflection of the ring on the ESC or wafer.

At step 1940, a camera takes an image of the edge coupling ring relative to a fixed reference (e.g., the lifting ring of FIG. 15). At step 1950, the image is processed and analyzed to determine whether the ring is aligned in the vertical direction, that is, whether there is any tilt in the edge coupling ring (e.g., as shown in FIG. 29B). If there is tilt, at step 1955, the controller 560 controls one or more actuators to compensate for the tilt, and the method returns to step 1940 to obtain more images and check again (at step 1950) whether there is still tilt.

If the edge coupling ring is not tilted, then the acquired images are used again at step 1960 to determine if the edge coupling ring is at the correct height. If the ring is not at the correct height, then at step 1965, the controller 560 controls one or more vertical actuators to correct the height, and the method returns to step 1940 to acquire more images and check again (at step 1960) if the edge coupling ring is at the correct height. In one feature, if the tilt has been adjusted, then step 1950 can be skipped and the method can proceed directly from step 1940 to step 1960. In another feature, by combining step 1950 and step 1960 into a single analysis and combining step 1955 and step 1965 into a single process, the controller 560 controls the vertical actuator in a single motion and can measure and adjust tilt and height in a single step.

Once the edge coupling ring is at the proper height and vertical alignment, a determination is made at step 1970 as to whether the edge coupling ring is horizontally aligned on the ESC. If it is not horizontally aligned, then at step 1975, the controller 560 causes one or more horizontal actuators to move the edge coupling ring, whereupon the method returns to step 1940 to obtain more images and again check (at step 1970) whether the edge coupling ring is horizontally aligned. In one feature, if the vertical alignment has been adjusted, steps 1950 and 1960 may be skipped, and the method may proceed directly from step 1940 to step 1970.

In the method illustrated in FIG. 32 , vertical alignment and horizontal alignment need not be determined in the order indicated. The order can be reversed, with horizontal alignment adjusted first and vertical alignment performed next. In one feature, controller 560 can receive all information regarding the positioning of the edge coupling rings and control multiple actuators at once to align the edge coupling rings. Based on this feature, steps 1950, 1960, and 1970 can be combined into a single analysis, and steps 1955, 1965, and 1975 can be combined into a single process.

FIG33 depicts a method for adjusting an edge coupling ring using an image from a camera. After the method begins at step 2010, at step 2020, it is determined whether a predetermined time has passed since the ring was installed and wafer processing began. If not, the method returns to step 2020 to check whether the predetermined time has passed.

In one feature, rather than waiting for a predetermined time, a determination is made at step 2020 as to whether a predetermined number of processing cycles have occurred. If not, the method returns to step 2020 to check the number of cycles again.

If a predetermined time has elapsed or a predetermined number of processing cycles have occurred, then in step 2030, the camera is focused to identify the inner edge of the ring. As described above, the camera can focus on the inner edge of the edge coupling ring, or on the ESC or the reflection of the ring on the wafer. In step 2040, after focusing, an image of the edge coupling ring relative to a fixed reference is taken, and the height of the inner edge of the ring is measured. In step 2050, if it is determined that the inner edge has at least a predetermined height above the wafer surface, then in step 2055 it is determined to wait for a predetermined time. In one feature, instead of waiting for a predetermined time, it is determined to wait for a predetermined number of wafer processing cycles. After a predetermined time has elapsed, or a predetermined number of cycles have occurred, the method returns to step 2030, where the camera is refocused, and then to step 2040, where more images are captured, and the determination of step 2050 is repeated.

If it is determined that the inner edge of the edge coupling ring does not have at least a predetermined height above the wafer surface, then at step 2060, the controller 560 controls the vertical actuator to lift the edge coupling ring. At step 2070, it is determined whether there have been a predetermined number of cycles since the edge coupling ring was installed. If not, the method returns to step 2055 and waits a predetermined time. In one feature, at step 2055, the method may wait for a predetermined number of cycles.

If it is determined in step 2070 that a predetermined number of cycles have passed, the edge coupling ring is replaced in step 2080. In one feature, instead of observing whether a predetermined number of cycles have passed, the extension of the actuator can be measured. If the extension of the actuator exceeds the predetermined amount, it can be determined that the edge coupling ring should be replaced. In another feature, it can be determined whether a predetermined time period has passed since the edge coupling ring was installed, replacing any previous alternatives. If such a time period has passed, it can be determined that the edge coupling ring should be replaced.

After replacing the edge coupling ring, the method can end at step 2090, or can return to the beginning.

The foregoing is illustrative in nature and is not intended to limit the present disclosure, its application, or use. The broad teachings of the present disclosure may be implemented in a variety of forms. Therefore, although the present disclosure includes specific examples, the actual scope of the present disclosure should not be so limited, as other variations will become apparent after studying the drawings, the specification, and the following patent application scope. As used herein, the phrase "at least one of A, B, and C" should be interpreted as indicating the logic of using the non-exclusive logical OR (A OR B OR C), and should not be interpreted as indicating "at least one of A, at least one of B, and at least one of C". It should be understood that one or more steps in the method may be performed in a different order (or simultaneously) without changing the principles of the present disclosure.

In some embodiments, the controller is part of a system, which may be part of the examples described above. Such systems may include semiconductor processing equipment, which includes a processing tool or tools, a chamber or chambers, a processing platform or platforms, and/or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with a plurality of electronic devices that are used to control the operation of these systems before, during, and after semiconductor wafer or substrate processing. These electronic devices may be referred to as "controllers" and may control the system or various components or sub-portions of these systems. Depending on the process requirements and/or system type, the controller may be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positioning and handling settings, wafer transport into or out of a tool or other transport tool and/or a load chamber connected to or interfacing with a particular system.

In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and/or software that receives instructions, issues instructions, controls operations, initiates cleanup operations, initiates endpoint measurements, etc. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be in the form of various independent configurations (or program files) that communicate with the controller, which define operating parameters for specific processing on or for a semiconductor wafer, or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to perform one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies on a wafer.

In some embodiments, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or may be all or part of a wafer fab host computer system that enables remote control of wafer processing. The computer may enable remote control of the system to monitor current processing of a manufacturing operation, review a history of past manufacturing operations, review trends or performance measurements of multiple manufacturing operations, change parameters of a current process, set a processing step after the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a processing recipe to the system via a network, which may include a local area network or the Internet. The remote computer may include a user interface that enables the input or programming of parameters and/or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each of the processing steps to be performed during one or more operating periods. It should be understood that the parameters can be specific to the type of processing to be performed and the type of tool to which the controller is coupled or to which it controls. Thus, as described above, the controller can be decentralized, such as by including one or more independent controllers that are networked together and work toward a common goal (e.g., the processing and control described herein). An example of a distributed controller for this purpose would be one or more integrated circuits in the chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer) to control processing in the chamber.

Without limitation, exemplary systems may include plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system related to or used in the manufacture of semiconductor wafers.

As described above, depending on the process steps to be performed by the tool, the controller may communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or material transfer tools that move wafer containers into and out of tool locations and/or load ports in a semiconductor manufacturing plant.

20: base 30: edge coupling ring 32: first annular portion 33: substrate 34: second annular portion 36: third annular portion 42: plasma 44: plasma 48: edge 60: edge coupling ring 72: first annular portion 74: second annular portion 76: third annular portion 80: actuator 82: plasma 84: plasma 86: edge 110: actuator 114: structure 116: structure 150: edge coupling ring 154: piezoelectric actuator 156: edge 500: substrate processing chamber 502: Processing chamber 503: Edge coupling ring 504: Upper electrode 505: Actuator 506: Base 507: Lower electrode 508: Substrate 509: Shower head 510: RF generation system 512: Matching and distribution network 530: Gas delivery system 532-1, 532-2, 532-N: Gas source 534-1, 534-N: Valve 536-1, 536-N: Mass flow controller 540: Manifold 542: Heater 550: Valve 552: Pump 560: Controller 570: Robot arm 572: Sensor 573: Robot arm 600: method 610: step 614: step 618: step 622: step 624: step 628: step 700: method 710: step 714: step 718: step 722: step 724: step 728: step 800: process chamber 804: actuator 810: mechanical linkage 811: hole 812: seal 814: wall 815: hole 830: edge coupling ring 830-1, 830-2: part 832-1, 832-2: part 836-1, 836-2: actuator 840: first setting 850: second setting 900: method 910: step 914: step 918: step 922: step 924: step 930: step 934: step 1010: base 1012: bushing 1014: edge coupling ring 1015: opening 1018: lifting ring 1019: opening 1020: end 1021: electrostatic chuck (ESC) 1022: ESC plate 1024: ESC plate 1026: O-ring 1030: ESC plate 1032: ESC plate 1034: bottom edge coupling ring 1040: self-centering feature 1044: self-centering feature 1046: self-centering feature 1048: self-centering feature 1050: self-centering feature 1051: self-centering feature 1052: self-centering feature 1054: protrusion 1056: groove 1057: surface 1060: support 1064: actuator 1102: robot arm 1104: support 1110: self-centering feature 1210: support 1214: actuator 1220: hole 1224: hole 1228: hole 1238: edge coupling ring 1240: middle edge coupling ring 1244: self-centered feature 1246: self-centered feature 1248: self-centered feature 1310: edge coupling ring 1316: self-centered feature 1320: self-centered feature 1324: groove 1326: self-centered feature 1400: method 1404: step 1408: step 1410: step 1412: step 1416: step 1500: method 1502: step 1504: step 1506: step 1508: step 1510: step 1512: step 1520: step 1524: step 1528: step 1600: method 1610: step 1620: step 1624: step 1628: step 1632: step 1636: step 1638: step 1642: step 1646: step 1710: processing chamber 1715: window 1720: base 1725: electrostatic chuck (ESC) 1730: actuator mechanism 1735: actuator mechanism 1740: edge coupling ring 1740': edge coupling ring 1750: wafer 1760: camera 1765: attachment mechanism 1770: side window 1775: baffle 1780: external lighting device 1785: attachment mechanism 1790: side window 1795: baffle 1800: controller 1840: edge coupling ring 1840': reflection 1845: eroded portion 1845': reflection 1910: step 1920: step 1930: step 1940: step 1950: Steps 1955: Steps 1960: Steps 1965: Steps 1970: Steps 1975: Steps 1980: Steps 2010: Steps 2020: Steps 2030: Steps 2040: Steps 2050: Steps 2055: Steps 2060: Steps 2070: Steps 2080: Steps 2090: Steps

According to the implementation and the accompanying drawings, the present disclosure can be more completely understood, among which:

FIG1 is a side cross-sectional view of a base and an edge coupling ring according to the prior art;

FIG. 2 is a side cross-sectional view of a base and an edge coupling ring according to the prior art after erosion of the edge coupling ring occurs;

FIG3 is a side cross-sectional view of an example of a base, an edge coupling ring, and an actuator;

FIG4 is a side cross-sectional view of the base, edge coupling ring, and actuator of FIG3 after erosion of the edge coupling ring occurs;

FIG5 is a side cross-sectional view of the base, edge coupling ring, and actuator of FIG3 after erosion of the edge coupling ring occurs and the actuator is moved;

FIG6 is a side cross-sectional view of another example of a base, an edge coupling ring, and an actuator in another position according to the present disclosure;

FIG. 7 is a side cross-sectional view of another example of a base, an edge coupling ring, and a piezoelectric actuator according to the present disclosure;

FIG8 is a side cross-sectional view of the base, edge coupling ring, and piezoelectric actuator of FIG7 after erosion occurs and the piezoelectric actuator is moved;

FIG. 9 is a functional block diagram of an example of a substrate processing chamber including a pedestal, an edge coupling ring, and an actuator according to the present disclosure;

FIG. 10 is a flow chart illustrating steps of an example of a method of operating an actuator to move an edge coupling ring according to the present disclosure;

FIG. 11 is a flow chart illustrating steps of another example of a method of operating an actuator to move an edge coupling ring according to the present disclosure;

FIG. 12 is a functional block diagram of an example of a processing chamber according to the present disclosure, the processing chamber including an edge coupling ring movable by an actuator disposed outside the processing chamber;

13A and 13B illustrate examples of side-to-side tilting of an edge coupling ring according to the present disclosure;

FIG. 14 illustrates an example of a method for moving an edge coupling ring during substrate processing;

FIG15 is a top view of an example of a base including an edge coupling ring and a lift ring;

FIG16 is a side cross-sectional view of an example of an edge coupling ring and a lift ring;

FIG. 17 is a side cross-sectional view of an example of an edge coupling ring lifted by a lifting ring and removed by a robot arm;

FIG18 is a side cross-sectional view of an example of a movable edge coupling ring and a lifting ring;

FIG. 19 is a side cross-sectional view of the movable edge coupling ring of FIG. 18 in a raised position;

FIG. 20 is a side cross-sectional view of the edge coupling ring of FIG. 18 lifted by a lifting ring and the edge coupling ring is removed by a robot arm;

FIG21 is a side cross-sectional view of an example of a movable edge coupling ring;

FIG. 22 is a side cross-sectional view of the edge coupling ring of FIG. 21 lifted by an actuator and removed by a robot arm;

FIG. 23 is an example of a method for replacing an edge coupling ring without opening a processing chamber;

FIG. 24 is an example of a method for moving an edge coupling ring due to erosion without opening a processing chamber and replacing the edge coupling ring;

FIG. 25 is an example of a method for lifting an edge coupling ring due to erosion and replacing the edge coupling ring without opening the processing chamber;

FIG26 is a side cross-sectional view of a processing chamber with an example of a detector mounted outside the chamber;

FIG. 27 is a side cross-sectional view of a processing chamber with an example of a detector and lighting device mounted outside the chamber;

FIG28 is a side cross-sectional view of a processing chamber having an etched or corroded edge coupling ring;

FIG. 29A shows an enlarged side view of a liner, and FIGS. 29B and 29C show examples of good and poor edge coupling ring placement relative to the liner;

30A-30C show examples of images of different positions and states of edge coupling rings;

FIG31 is a side cross-sectional view showing another imaging mode using an edge coupling ring of a detector;

FIG. 32 is an example of a method of inspecting an edge coupling ring to determine its alignment on an electrostatic chuck;

FIG. 33 is an example of a method of inspecting an edge coupling loop to determine its condition.

In the drawings, element symbols may be repeated to identify similar and/or identical elements.

1710: Processing chamber

1715:Window

1720: Base

1725: Electrostatic Chuck (ESC)

1730: Actuator mechanism

1735:Actuator mechanism

1740:Edge coupling ring

1750: Wafer

1760:Camera

1765: Attachment mechanism

1770: Side window

1775:Block

1800: Controller

Claims (9)

A detection system is provided for detecting a condition of an edge coupling ring, the edge coupling ring being arranged near a substrate support in a substrate processing chamber, the detection system comprising: a camera for obtaining image data of a plasma-facing surface of the edge coupling ring through a first window of the substrate processing chamber, wherein the image data comprises an inner edge of the edge coupling ring, and wherein the image data indicates a position of the plasma-facing surface of the edge coupling ring relative to a reference structure in the substrate processing chamber, wherein the reference structure is a sleeve, the sleeve surrounding the substrate support, the sleeve having a plurality of openings, and the image data indicates a position of the plasma-facing surface of the edge coupling ring. The device comprises a first controller for controlling an actuator to selectively move the edge coupling ring relative to the substrate support, receiving the image data from the camera, identifying a plurality of feature portions of the edge coupling ring in the image data, determining at least one of the condition and the position of the plasma-facing surface of the edge coupling ring based on the image data including the identified feature portions, calculating a plurality of heights between a segment of the plasma-facing surface of the edge coupling ring and corresponding tops of the plurality of openings, and comparing the plurality of heights to determine at least one of the condition and the position of the plasma-facing surface of the edge coupling ring. A detection system as claimed in claim 1, wherein the image data includes image data of a segment of the edge coupling ring relative to at least one opening in the liner, and wherein the first controller is used to calculate the height between the segment of the edge coupling ring and the top of the at least one opening to determine at least one of the condition and the position of the plasma-facing surface of the edge coupling ring. The detection system of claim 1 further includes an illumination device for providing light to the camera to obtain the image data of the edge coupling ring. A detection system as claimed in claim 3, wherein the lighting device provides light through the first window. A detection system as claimed in claim 4, wherein the lighting device is configured to provide light through a second window of the substrate processing chamber. A detection system as claimed in claim 1, wherein the first controller is used to control the actuator to move the edge coupling ring in a vertical direction relative to the substrate support in response to a condition indicating erosion of the plasma-facing surface of the edge coupling ring. A detection system as claimed in claim 1, wherein the first controller is used to control the actuator to move the edge coupling ring in a horizontal direction relative to the substrate in response to a condition indicating misalignment of the edge coupling ring. A detection system as claimed in claim 1, wherein the first controller is used to respond to the detection of the condition of the edge coupling loop to adjust the position of the camera. A substrate processing system, comprising the detection system of claim 1 and further comprising: the substrate processing chamber; the substrate support; and the edge coupling ring.

Images