TWI860299B - Substrate processing device, substrate processing method, and storage medium - Google Patents

Abstract

An object of the invention is to prevent pattern damage when removing a drying liquid from the surface of a substrate. A substrate processing device comprises a substrate holding section which holds a substrate, a drying liquid supply section which supplies a drying liquid to a surface of the substrate held by the substrate holding section, a temperature adjustment section which changes the surface temperature of the substrate, and a control section which controls the temperature adjustment section. The control section controls the temperature adjustment section so as to produce a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate.

Description

Substrate processing device, substrate processing method and recording medium

The present invention relates to a substrate processing device, a substrate processing method and a recording medium.

A method for drying a substrate after cleaning treatment includes the following method: supplying a drying liquid to the surface of the substrate, replacing the rinsing liquid with the drying liquid, and then removing the drying liquid (see Patent Document 1). [Prior Technical Document] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2014-90015

[Problem to be solved by the invention]

The present invention provides a technique that can prevent pattern damage when removing a drying liquid from the surface of a substrate. [Solution]

A substrate processing device according to one embodiment of the present invention comprises: a substrate holding part for holding a substrate; a drying liquid supplying part for supplying drying liquid to the surface of the substrate held by the substrate holding part; a temperature adjusting part for changing the surface temperature of the substrate; and a control part for controlling the temperature adjusting part. The control part controls the temperature adjusting part so that a temperature difference is generated in the liquid film of the drying liquid supplied to the surface of the substrate. [Effect of the invention]

According to an exemplary embodiment, it is possible to prevent pattern damage when removing the drying liquid from the surface of the substrate.

Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, in each of the drawings, the same or corresponding parts are given the same symbols.

<First embodiment> [Structure of substrate processing system] Figure 1 is a schematic diagram of the structure of the substrate processing system of the first embodiment. In order to make the positional relationship clear, the X-axis, Y-axis and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is taken as the vertical upward direction.

As shown in Fig. 1, a substrate processing system 1 includes a loading/unloading station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are disposed adjacent to each other.

The loading/unloading station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of carriers C are placed on the carrier placement unit 11. The plurality of carriers C accommodate a plurality of substrates in a horizontal state, which are semiconductor wafers (hereinafter referred to as wafers W) in this embodiment.

The transport unit 12 is disposed adjacent to the carrier placement unit 11, and has a substrate transport device 13 and a transfer unit 14 therein. The substrate transport device 13 has a wafer holding mechanism for holding a wafer W. The substrate transport device 13 can move in horizontal and vertical directions, and rotate around a vertical axis, and transports the wafer W between the carrier C and the transfer unit 14 using the wafer holding mechanism.

The processing station 3 is adjacent to the transporting section 12. The processing station 3 includes a transporting section 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged on both sides of the transporting section 15.

The transport unit 15 has a substrate transport device 17 therein. The substrate transport device 17 has a wafer holding mechanism for holding the wafer W. The substrate transport device 17 can move in horizontal and vertical directions and rotate around a vertical axis, and transports the wafer W between the transfer unit 14 and the processing unit 16 using the wafer holding mechanism.

The processing unit 16 performs a predetermined substrate process on the wafer W transported by the substrate transport device 17 in accordance with the control of a control unit 18 of the control device 4 described later.

The substrate processing system 1 is provided with a control device 4. The control device 4 is a computer, and includes a control unit 18 and a memory unit 19. The memory unit 19 stores programs for controlling various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the memory unit 19.

Furthermore, the program is recorded on a computer-readable recording medium and can be installed from the recording medium to the memory unit 19 of the control device 4. The computer-readable recording medium includes a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, etc.

In the substrate processing system 1 configured as described above, first, the substrate transport device 13 of the loading/unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement portion 11, and then places the taken-out wafer W on the transfer portion 14. The wafer W placed on the transfer portion 14 is taken out from the transfer portion 14 by the substrate transport device 17 of the processing station 3 and carried into the processing unit 16.

After the wafer W is carried into the processing unit 16 and processed by the processing unit 16, it is carried out from the processing unit 16 by the substrate transport device 17 and placed on the transfer unit 14. Then, the processed wafer W placed on the transfer unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transport device 13.

[Structure of substrate processing device] Referring to FIG. 2 , the structure of the substrate processing device 10 included in the substrate processing system 1 is described. The substrate processing device 10 is included in the processing unit 16 of the substrate processing system 1.

As shown in FIG. 2 , the substrate processing apparatus 10 includes a processing chamber 20 , a substrate holding mechanism 30 , a processing liquid supply unit 40 , a recovery cup 50 , and a temperature adjustment unit 60 .

The processing chamber 20 is used to accommodate the substrate holding mechanism 30, the processing liquid supply unit 40 and the recovery cup 50. A FFU (Fan Filter Unit) 21 is provided on the ceiling of the processing chamber 20. The FFU 21 has a function of forming a downflow in the processing chamber 20. The FFU 21 forms a downflow gas by supplying a downflow gas supplied from a downflow gas supply pipe (not shown) into the processing chamber 20.

The substrate holding mechanism 30 has a function of rotatably holding the wafer W. The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding portion 31 horizontally holds the wafer W. The support portion 32 is a component extending in the vertical direction, and its base end is rotatably supported by the driving portion 33, and the front end horizontally supports the holding portion 31. The driving portion 33 rotates the support portion 32 around a vertical axis. The substrate holding mechanism 30 rotates the support portion 32 by using the driving portion 33 to rotate the holding portion 31 supported by the support portion 32, thereby rotating the wafer W held by the holding portion 31.

The processing liquid supply unit 40 supplies processing liquid to the wafer W. The processing liquid supply unit 40 is connected to the processing liquid supply source 80. The processing liquid supply unit 40 has a nozzle 41 for supplying the processing liquid from the processing liquid supply source 80. The processing liquid supply source 80 has a plurality of processing liquid supply sources, and changes the supplied processing liquid according to the progress of the processing of the wafer W. In addition, the nozzle 41 is provided at the front end portion of a nozzle arm (not shown) that can rotate in the transverse direction (horizontal direction). In this way, the processing liquid can be supplied to the wafer W while changing the position of the front end of the nozzle 41 by rotating the nozzle arm.

A chemical liquid supply source 81, a DIW supply source 82, and an IPA supply source 83 are provided as a processing liquid supply source 80. The chemical liquid supply source 81 supplies one or more chemical liquids for surface treatment of the wafer W. Furthermore, the DIW supply source 82 supplies DIW (Deionized Water: pure water) for rinsing the surface of the wafer W. Furthermore, the IPA supply source 83 supplies IPA (Isopropyl Alcohol: isopropyl alcohol) for replacing the DIW on the surface of the wafer W. IPA is a type of volatile drying liquid, and its surface tension is smaller than that of DIW. Therefore, by first replacing the DIW on the surface of the wafer W with IPA and then removing the IPA to dry the wafer W, the damage to the surface pattern of the wafer W during the drying of the wafer W can be prevented. The chemical liquid supply source 81, the DIW supply source 82, and the IPA supply source 83 are connected to the nozzle 41 through valves V1, V2, and V3, respectively. By switching the valves V1, V2, and V3, the processing liquid supplied from the nozzle 41 to the wafer W can be changed.

2, one nozzle 41 is shown, but a plurality of nozzles may be provided respectively for a plurality of processing liquids, or one nozzle may be shared by a part of the processing liquids.

The movement of the nozzle 41 and the supply/stop of the liquid from each supply source of the processing liquid supply source 80 are controlled by the control unit 18 described above.

The recovery cup 50 is arranged to surround the holding part 31, and collects the processing liquid scattered from the wafer W due to the rotation of the holding part 31. A liquid discharge port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged to the outside of the processing unit 16 from the liquid discharge port 51. In addition, an exhaust port 52 is formed at the bottom of the recovery cup 50 to discharge the gas supplied from the FFU 21 to the outside of the processing unit 16.

The temperature adjustment part 60 has the function of controlling the surface temperature of the wafer W held on the holding part 31. In the substrate processing device 10 shown in FIG. 2 , the temperature adjustment part 60 has: a first temperature adjustment part 61 that performs overall temperature control of the wafer W on the back side of the holding part 31; and a linear second temperature adjustment part 62 that is disposed on the surface side of the wafer W. The temperature distribution on the surface of the wafer W is controlled by heating or cooling the first temperature adjustment part 61 and the second temperature adjustment part 62 respectively. That is, the first temperature adjustment part 61 and the second temperature adjustment part 62 have the function of serving as a substrate heating part or a substrate cooling part.

The first temperature adjustment section 61 is disposed on the back side of the wafer W to perform temperature control on the entire wafer W. However, although the first temperature adjustment section 61 performs temperature control on the entire surface of the wafer W, it may be configured to heat or cool the wafer W at a non-uniform temperature so that the temperature distribution on the surface of the wafer W has a deviation. For example, it may be configured as follows: the first temperature adjustment section 61 is divided into a plurality of regions, and each division is independently temperature controlled, i.e., so-called multi-channel control is performed, thereby heating different positions of the wafer W at different heating temperatures. Furthermore, by utilizing multi-channel control, the surface temperature of the wafer W may have a predetermined gradient. When the wafer W is heated by the first temperature adjustment section 61, a hot plate may be used as the first temperature adjustment section 61. Furthermore, when the wafer W is cooled by the first temperature adjustment unit 61, a cooling plate may be used as the first temperature adjustment unit 61. However, the configuration of the first temperature adjustment unit 61 is not limited thereto.

The second temperature adjustment section 62 is a linear heat source or cooling source that is separated from the surface of the wafer W by a predetermined distance and extends in the lateral direction (horizontal direction) (refer to FIG. 4 (a)). FIG. 2 shows a state in which the long side direction of the second temperature adjustment section 62 is arranged in the Y-axis direction. Furthermore, the second temperature adjustment section 62 is configured to be movable in the lateral direction (horizontal direction) and in a direction intersecting with the long side direction of the second temperature adjustment section 62 (for example, an orthogonal direction). The second temperature adjustment section 62 shown in FIG. 2 can move through all areas that overlap with the surface of the wafer W on the holding section 31 when viewed from above by moving along the X-axis direction. By being configured in this way, a specific area of the wafer W (an area close to the second temperature adjustment section 62) can be heated or cooled. When the second temperature adjusting unit 62 is used to heat the wafer W, a laser or a lamp may be used as the second temperature adjusting unit 62. When the second temperature adjusting unit 62 is used to cool the wafer W, an air flow (cooled gas) may be used as the second temperature adjusting unit 62. However, the configuration of the second temperature adjusting unit 62 is not limited thereto.

The adjustment of the heating temperature or cooling temperature by the first temperature adjusting section 61 and the second temperature adjusting section 62, and the movement of the second temperature adjusting section 62, are controlled by the control section 18 described above.

[Substrate processing method] Referring to FIG. 3 , the contents of the liquid processing performed using the above-mentioned substrate processing apparatus 10 are described.

First, when the wafer W carried into the processing unit 16 by the substrate transport device 17 is held in the holding portion 31 of the substrate holding mechanism 30, the nozzle 41 is moved to the processing position on the wafer W. Then, the chemical liquid treatment is performed by rotating the wafer W at a predetermined speed and supplying the chemical liquid from the nozzle 41 (S01). At this time, the support portion 32 or the driving portion 33 shown in FIG. 2 is equivalent to a rotating mechanism for rotating the wafer W held by the holding portion 31.

Next, a rinse and wash process is performed in which the processing liquid supplied from the nozzle 41 is switched to DIW for washing (S02). Specifically, DIW is supplied to the wafer W having a liquid film of a chemical liquid while the wafer W is rotated. By supplying DIW, the residue attached to the wafer W is washed away by DIW.

After the rinsing and cleaning process is performed for a predetermined time, the supply of DIW from the nozzle 41 is stopped. Next, IPA is supplied from the nozzle 41 to the surface of the rotating wafer W, and a replacement process is performed to replace the DIW on the surface of the wafer W with IPA (S03: drying liquid supply step). Since IPA is supplied to the surface of the wafer W, a liquid film of IPA is formed on the surface of the wafer W. In this way, the DIW remaining on the surface of the wafer W can be replaced with IPA.

After the DIW on the surface of the wafer W is fully replaced with IPA, the supply of IPA to the wafer W is stopped. Then, the IPA remaining on the surface of the wafer W is discharged from the surface of the wafer W (S04: discharge step). By discharging IPA from the surface of the wafer W, the surface of the wafer W is made dry. In addition, in the substrate processing device 10, the temperature of the surface of the wafer W is deviated by using the temperature adjustment unit 60, so as to promote the discharge of IPA from the surface of the wafer W. This point will be described later.

When the surface of the wafer W is dried, the liquid treatment of the wafer W is completed. The wafer W is unloaded from the substrate processing apparatus 10 in the reverse order of loading.

[Discharge Processing] Referring to FIG. 4(a) to FIG. 4(c), the discharge processing of IPA using the temperature adjustment unit 60 is described. FIG. 4(a) is a three-dimensional diagram for describing the operation of the second temperature adjustment unit 62 disposed on the surface of the wafer W. FIG. 4(b) is an explanatory diagram for describing the temperature control of the wafer W using the first temperature adjustment unit 61 and the second temperature adjustment unit 62. As shown in FIG. 4(b), a predetermined pattern W1 (e.g., a photoresist pattern) is formed on the surface of the wafer W. FIG. 4(c) is an explanatory diagram for describing the temperature of the surface of the wafer W.

Before the IPA discharge process is performed, an IPA liquid film L is formed in a manner covering the surface of the wafer W. In the examples shown in Figures 4(a) to 4(c), the first temperature adjustment section 61 is used as a substrate cooling section for cooling the back side of the wafer W to a predetermined temperature. The surface of the wafer W is cooled to a fixed temperature by the first temperature adjustment section 61. In addition, the second temperature adjustment section 62 is used as a substrate heating section for heating a predetermined position on the surface of the wafer W from the surface side of the wafer W. When the IPA is discharged, as shown in Figure 4(b), the second temperature adjustment section 62 is arranged close to the end of the wafer W. In this way, the surface of the end of the wafer W is heated by the second temperature adjustment section 62.

As a result, as shown in FIG4(c), the temperature T1 of the end portion (periphery) near the side where the second temperature adjustment portion 62 is arranged is higher than the temperature T2 of other areas of the surface of the wafer W. In this way, a dry object area A1 is formed between the end portion of the wafer W at a temperature of T1 and the untreated area A2 at a temperature of T2, where the temperature changes from T1 to T2. That is, the surface of the wafer W includes: the dry object area A1 and the untreated area A2 adjacent to the dry object area A1. In other words, the temperature of the edge portion La of the IPA liquid film L close to the dry object area A1 becomes higher than the temperature of the remaining portion Lb of the IPA liquid film L corresponding to the untreated area A2. Therefore, a temperature difference is generated between the edge portion La and the remaining portion Lb. Therefore, in the drying target area A1, the IPA liquid film L condenses toward the untreated area A2 side with a lower temperature.

In the drying target area A1, since the temperature of the surface of the wafer W is higher than that of other areas at the temperature T2, the evaporation (volatilization) of IPA from the IPA liquid film L can be promoted. As a result, the film thickness of the IPA liquid film L in the drying target area A1 becomes smaller than the film thickness of the untreated area A2 (area at the temperature T2). As a result, a surface tension difference is generated between the IPA liquid film L in the drying target area A1 and the IPA liquid film L in the untreated area A2, so that the surface tension of the IPA liquid film L in the drying target area A1 becomes smaller than that of the untreated area A2. As a result, the so-called Marangoni convection is generated in which the edge La of the IPA liquid film L in the drying target area A1 is pulled toward the untreated area A2 side (the right side in FIG. 4). The edge La of the IPA liquid film L moves toward the lower temperature side due to the force generated by the Marangoni convection.

At this time, as shown in FIG. 4( b ), if the second temperature adjustment unit 62 is moved in the direction of arrow S, the drying target area A1 moves from the position shown in FIG. 4( c ) in the direction of arrow S. By moving the second temperature adjustment unit 62 at a speed corresponding to the condensation speed of the IPA liquid film L (the moving speed of the edge La of the IPA liquid film L), the condensation of the IPA liquid film L due to Marangoni convection can occur, and the IPA on the surface of the wafer W can be moved in the direction of arrow S. Therefore, at the end Wa of the wafer W on the downstream side along the direction of arrow S, the IPA can be discharged from the surface of the wafer W.

The area on the surface of the wafer W that is the target of the drying process of the IPA liquid film L is the "drying target area A1". On the other hand, the area on the surface of the wafer W that is not the target of the drying process of the IPA liquid film L is the "untreated area A2". In the example shown in FIG. 4, the drying target area A1 is an area on the surface of the wafer W that is heated by the second temperature adjustment section 62, that is, an area that generates a temperature gradient from temperature T1 to temperature T2. As described above, in the drying target area A1, the edge La of the IPA liquid film L is pulled toward the untreated area A2 side by Marangoni convection, thereby moving the end of the IPA liquid film L. Therefore, by controlling the position of the drying target area A1, a temperature gradient is formed on the surface of the wafer W between the drying target area and other areas, so that condensation of IPA on the surface of the wafer W can occur.

[Function and Effect] In this way, in the substrate processing device 10, the temperature of the surface of the wafer W is controlled by the temperature adjustment unit 60, and a temperature difference is formed on the surface of the wafer W between the drying target area A1 and the unprocessed area A2. Specifically, a temperature difference is generated in the IPA liquid film L in such a way that the temperature of the edge La of the IPA liquid film L becomes higher and the temperature of the remaining part Lb of the IPA liquid film L becomes lower. Thereby, Marangoni convection is generated in the edge La of the IPA liquid film L. Therefore, while the IPA is condensed in a predetermined direction (specifically, the side with a lower temperature) on the surface of the wafer W, the IPA is discharged from the surface of the wafer W. In this way, by adopting a configuration in which IPA is discharged from the surface of the wafer W by utilizing the condensation of IPA due to Marangoni convection, it is possible to prevent the pattern on the surface of the wafer W from collapsing when the IPA is removed from the surface of the wafer W.

As a method of removing IPA from the surface of wafer W, it is known to use a method of rotating wafer W to move IPA toward the periphery by centrifugal force. In this case, IPA on the surface of wafer W is subjected to centrifugal force and flows outward. However, in the case where IPA is moved by external force, a boundary layer with extremely thin liquid thickness is formed at the end of the IPA liquid film. Since the boundary layer is an area where IPA cannot be moved by external force, the surface of wafer W can only be dried by evaporation of IPA. At this time, the evaporation rate of IPA cannot be uniform on the surface of wafer W. In particular, since a plurality of patterns W1 are formed on the surface of wafer W, differences in the height of the IPA liquid level are easily generated due to the shape of pattern W1, etc. If the evaporation of IPA continues in a state where the liquid level of IPA is different, the stress difference caused by the liquid level will affect the pattern W1, and the damage of the pattern W1 such as pattern collapse may be further aggravated.

In contrast, in the substrate processing apparatus 10, as described above, the Marangoni convection generated by the temperature gradient is used to condense the IPA on the surface of the wafer W. That is, when the IPA is moved by the difference in surface tension rather than by an external force, the generation of a boundary layer at the edge La of the IPA liquid film L can be prevented. That is, since the area dried by evaporation can be removed, damage to the pattern W1 such as pattern collapse can be prevented when the IPA is removed. The pattern W1 formed on the surface of the wafer W has a higher risk of pattern collapse in recent years due to a higher aspect ratio, but by removing the IPA using the above-mentioned Marangoni convection, the incidence of pattern collapse can be reduced. Furthermore, the temperature gradient on the surface of the wafer W does not necessarily mean that the temperature on the side where the IPA liquid film L exists becomes lower and the temperature on the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) becomes higher. Furthermore, as long as the desired temperature difference is generated between the drying target area and other areas (untreated areas), the temperature gradient may not be formed in the untreated area A2 (untreated area).

Furthermore, the surface temperature of the wafer W controlled by the temperature adjustment unit 60 is preferably controlled to a level that does not promote the volatility of IPA. In order to generate Marangoni convection in IPA, a temperature higher than room temperature (about 23°C) is sufficient. For example, the temperature adjustment unit 60 can be controlled to make the surface temperature of the wafer W above 30°C. If the surface temperature of the wafer W becomes too high, the volatility of IPA is promoted more than the movement caused by the condensation of IPA, and the possibility of pattern damage becomes higher.

Furthermore, as shown in FIG. 4 , in the substrate processing device 10, the second temperature adjustment portion 62 is horizontally moved from the end portion of one side of the wafer W in the direction of the arrow S, thereby causing the IPA liquid film L to condense in the direction of the arrow S and causing the IPA to be discharged from the end portion Wa on the downstream side of the direction of the arrow S. In this way, the IPA moves along the direction of the arrow S on the surface of the wafer W. In order to promote the movement of the IPA, the wafer W on the holding portion 31 may be tilted slightly (about 0.1° to 1°) so that the end portion Wa becomes the lower side. As a method for tilting the wafer W on the holding portion 31, a method of causing a so-called axial deviation to occur by moving the position of the support portion 32 supporting the holding portion 31 laterally may be used. In this manner, a configuration may be adopted in which the wafer W is slightly tilted to facilitate discharge from the end Wa of the IPA.

The movement of the second temperature adjustment unit 62 and the cooling temperature of the first temperature adjustment unit 61 are changed by the control of the control unit 18. The control unit 18 can also control each part of the temperature adjustment unit 60 by executing a program determined in advance based on the liquid characteristics of IPA. In addition, the control unit 18 can also perform the following control: based on the information related to the state of the surface of the wafer W obtained by the camera provided in the substrate processing device 10 for observing the surface of the wafer W, the operation of each part of the temperature adjustment unit 60 is changed.

<First variant> Next, a variant of the temperature adjustment unit 60 will be described. As described above, if a temperature gradient is formed near the edge La of the IPA liquid film L in such a way that the temperature of the side where the IPA liquid film L exists becomes lower and the temperature of the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) becomes higher, Marangoni convection is generated at the edge La of the IPA liquid film L. By generating this Marangoni convection, the IPA liquid film L can generate condensation without forming a boundary layer by utilizing surface tension. Therefore, as long as the temperature gradient as described above can be formed on the surface of the wafer W, the structure of the temperature adjustment unit 60 can be appropriately changed.

FIG. 5(a) to FIG. 5(c) are diagrams of the temperature adjustment section 60A of the first variant. FIG. 5(a) to FIG. 5(c) are diagrams corresponding to FIG. 4(a) to FIG. 4(c). The temperature adjustment section 60A has the following differences compared to the temperature adjustment section 60. That is, in the temperature adjustment section 60A, a temperature gradient is formed on the surface of the wafer W by changing the heating temperature of the first temperature adjustment section 61 provided on the back side of the wafer W according to the position. That is, the second temperature adjustment section 62 is not used.

In FIG. 5( b ), the heating temperature of each position caused by the first temperature adjustment unit 61 is shown as a gradation. That is, by controlling the heating temperature by the first temperature adjustment unit 61 , the heating temperature of the end Wb on the left side of the diagram of the wafer W becomes higher, and the heating temperature becomes lower toward the end Wc on the right side of the diagram. As a result, as shown in FIG. 5( c ), the surface temperature of the wafer W forms a temperature gradient from the end Wb on the left side of the diagram to the end Wc on the right side of the diagram. That is, in the example shown in FIG. 5 , a temperature gradient is formed in both the drying target area A1 and the unprocessed area A2.

As a result, as shown in FIG5(b), the IPA liquid film L generates Marangoni convection from the end Wb side of the wafer W and moves toward the end Wc side. The surface temperature of the wafer W forms a temperature gradient as a whole, so even if the edge La of the IPA liquid film L moves toward the end Wc side, the edge La still exists on the drying object area A1. Therefore, the condensation and movement of the IPA liquid film L caused by the Marangoni convection can continue. That is, the temperature gradient formed on the entire surface of the wafer W functions as a temperature gradient in which the temperature of the side where the IPA liquid film L exists becomes lower and the temperature of the side where the IPA liquid film L does not exist (the exposed end Wb side of the wafer W) becomes higher. As a result, the IPA liquid film L moves toward the end Wc side and is discharged from the end Wc side.

In this way, when the heating temperature of the wafer W can be controlled at different locations in the first temperature adjustment unit 61, a temperature gradient can be formed on the surface of the wafer W even if the combination with the second temperature adjustment unit 62 is not used. Therefore, a configuration can be set to control the movement and discharge of the IPA liquid film L using this temperature gradient. Even when such a configuration is set, the occurrence rate of pattern collapse can be reduced.

<Second variant> Figures 6(a) to 6(c) are diagrams of the temperature adjustment section 60B of the second variant. Figures 6(a) to 6(c) are diagrams corresponding to Figures 4(a) to 4(c). The temperature adjustment section 60B has the following differences compared to the temperature adjustment section 60. That is, in the temperature adjustment section 60B, the first temperature adjustment section 61 provided on the back side of the wafer W is not used, but the third temperature adjustment section 63 arranged in parallel with the second temperature adjustment section 62 is used instead, and a temperature gradient is formed on the surface of the wafer W. That is, the first temperature adjustment section 61 is not used.

In the temperature adjustment section 60B, the third temperature adjustment section 63 can also be set as a linear heat source or cooling source extending in the transverse direction (horizontal direction) similarly to the second temperature adjustment section 62. In the temperature adjustment section 60B, the second temperature adjustment section 62 is set as a heat source, and the third temperature adjustment section 63 is set as a cooling source. Then, as shown in FIG. 6(a) and FIG. 6(b), the configuration is such that the second temperature adjustment section 62 and the third temperature adjustment section 63 extend in parallel with the edge La of the IPA liquid film L, and the third temperature adjustment section 63 becomes the side of the IPA liquid film L.

As a result, as shown in FIG6(c), a drying target area A1 is formed between the second temperature adjustment part 62 and the third temperature adjustment part 63. Since the third temperature adjustment part 63 serving as a cooling source is disposed on the side of the IPA liquid film L, a temperature gradient is formed in the drying target area A1 in such a manner that the temperature on the side where the IPA liquid film L exists becomes lower and the temperature on the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) becomes higher. Therefore, the edge La of the IPA liquid film L moves toward the third temperature adjustment part 63 side.

At this time, as shown in FIG6(b), if the second temperature adjustment part 62 and the third temperature adjustment part 63 are moved in the direction of arrow S in correspondence with the movement of the edge La, the drying target area A1 moves from the position shown in FIG6(c) in the direction of arrow S. By moving the second temperature adjustment part 62 and the third temperature adjustment part 63 in correspondence with the condensation speed of the IPA liquid film L (the movement speed of the edge La of the IPA liquid film L), the condensation of the IPA liquid film L caused by the Marangoni convection in the edge La can occur. In this way, the IPA on the surface of the wafer W can be moved in the direction of arrow S. Therefore, at the end Wa of the wafer W on the downstream side along the direction of arrow S, the IPA can be discharged from the surface of the wafer W.

Thus, even when two linear temperature adjustment sections, namely, the second temperature adjustment section 62 and the third temperature adjustment section 63 are combined to form the temperature adjustment section 60B, a gradient can be set in the temperature of the surface of the wafer W. Therefore, a configuration can be set to control the movement and discharge of the IPA liquid film L using this temperature gradient. Even when such a configuration is set, the occurrence rate of pattern collapse can be reduced.

<Second embodiment> Next, the second embodiment of the temperature adjustment unit is described. In the first embodiment, the case where the IPA liquid film L is promoted to move in one direction (for example, the direction of arrow S shown in FIG. 4(b)) by utilizing the Marangoni convection of IPA generated by the temperature gradient on the surface of the wafer W is described. Therefore, in the first embodiment, the IPA is discharged from the end of one side of the wafer W (for example, the end Wa shown in FIG. 4(b)). In contrast, in the second embodiment, the case where the IPA liquid film L is promoted to move from the center to the periphery of the wafer W by utilizing the Marangoni convection of IPA generated by the temperature gradient on the surface of the wafer W is described. Since the moving direction of the IPA liquid film L is different, that is, from the center to the periphery, the IPA is discharged from somewhere on the periphery of the wafer W.

The point where the temperature gradient is formed on the surface of the wafer W is the same as that in the first embodiment. That is, near the end of the IPA liquid film L, a temperature gradient is formed in such a way that the temperature of the side where the IPA liquid film L exists becomes lower and the temperature of the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) becomes higher, so that Marangoni convection is generated at the edge La of the IPA liquid film L.

Fig. 7 (a) to Fig. 7 (c) and Fig. 8 (a) to Fig. 8 (c) are diagrams of the temperature adjustment unit 70 of the second embodiment. Fig. 7 (a) to Fig. 7 (c) and Fig. 8 (a) to Fig. 8 (c) are diagrams corresponding to Fig. 4 (a) to Fig. 4 (c) respectively.

The temperature adjustment unit 70 includes a first temperature adjustment unit 71 disposed on the back side of the wafer W and a second temperature adjustment unit 72 disposed on the front side of the wafer W.

The first temperature adjustment section 71 has the same structure as the first temperature adjustment section 61 of the temperature adjustment section 60. That is, the first temperature adjustment section 71 is provided on the back side of the wafer W and performs temperature control of the entire wafer W. Furthermore, the first temperature adjustment section 71 may also be configured to be divided into a plurality of regions, and each of the regions is independently temperature controlled, i.e., to perform so-called multi-channel control, so that the surface temperature of the wafer W has a predetermined gradient.

The second temperature adjustment section 72 is a spot-type heat source that is separated from the surface of the wafer W by a predetermined distance in an area including the center (see also FIG. 7(a)). The second temperature adjustment section 72 heats the area including the center on the surface of the wafer W. A laser or a lamp can be used as the second temperature adjustment section 72. However, the configuration of the second temperature adjustment section 72 is not limited thereto. The "area including the center on the surface of the wafer W" heated by the second temperature adjustment section 72 refers to an area including the center of the wafer W and having a diameter smaller than the diameter of the wafer W. The diameter of the area including the center on the surface of the wafer W can be set to, for example, less than 30% relative to the diameter of the wafer W.

The following describes the IPA discharge process using the temperature adjustment unit 70. Before the IPA discharge process is performed, an IPA liquid film L is formed to cover the surface of the wafer W. In the example shown in FIG. 7(a) to FIG. 7(c), the first temperature adjustment unit 71 is used as a substrate cooling unit for cooling the back surface of the wafer W to a predetermined temperature. The first temperature adjustment unit 71 cools the surface of the wafer W to a fixed temperature.

The second temperature adjustment unit 72 is used as a substrate heating unit for heating the wafer W near the center from the surface side of the wafer W. When the IPA is discharged, as shown in FIG. 7( b ), the second temperature adjustment unit 72 is disposed near the center of the wafer W and heats the surface of the wafer W near the center.

As a result, as shown in FIG. 7( c ), the temperature T1 of the area including the center of the surface of the wafer W is higher than the temperature T2 of the peripheral side separated from the second temperature adjustment portion 72. Therefore, a drying target area A1 changing from temperature T1 to temperature T2 is formed between the area including the center of the wafer W at temperature T1 and the unprocessed area A2 at temperature T2. When this drying target area A1 is formed, the IPA liquid film L condenses toward the low temperature area side in the drying target area A1. In addition, in the drying target area A1, the temperature gradually decreases toward the peripheral side with the temperature T1 of the area including the center of the wafer W as the center.

In the drying target area A1, Marangoni convection is generated due to the difference in surface tension of the IPA liquid film L. The edge La (inner periphery) of the IPA liquid film L moves toward the lower temperature side, that is, the outer periphery of the wafer W, by the force generated by the Marangoni convection.

If the condensation of the IPA liquid film L occurs, as shown in Figures 8(a) and 8(b), the edge La of the IPA liquid film L slowly moves toward the periphery. On the other hand, if the cooling of the wafer W by the first temperature adjustment unit 71 and the heating of the area including the center of the wafer W by the second temperature adjustment unit 72 are continued, the surface temperature of the area including the center of the wafer W from which the IPA liquid film L has been removed (i.e., dried) becomes a fixed temperature T1. On the other hand, the area where the IPA liquid film L remains on the periphery is maintained at a temperature T2. As a result, as shown in Figure 8(c), a ring-shaped drying target area A1 is formed near the edge La of the IPA liquid film L, i.e., the area where the film thickness of the IPA liquid film L changes. Therefore, while Marangoni convection is formed near the edge La of the IPA liquid film L, the edge La moves toward the outer periphery of the wafer W. In addition, along with the movement of the edge La, the drying target area A1 also moves toward the outer periphery. In this way, by continuing the movement of the edge La of the IPA liquid film L caused by the Marangoni convection, the IPA can be discharged from the surface of the wafer W at the outer periphery of the wafer W.

In this way, even when the temperature adjustment unit 70 is used, the drying target area A1 can be formed by controlling the temperature of the surface of the wafer W. That is, near the edge La of the IPA liquid film L, a temperature gradient is formed in such a way that the temperature of the side where the IPA liquid film L exists becomes lower and the temperature of the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) becomes higher. In this way, Marangoni convection is generated at the edge La of the IPA liquid film L. As a result, the IPA can be condensed toward the side where the surface temperature of the wafer W becomes lower, while the IPA can be discharged from the surface of the wafer W. Therefore, the pattern collapse of the surface of the wafer W when the IPA is removed from the surface of the wafer W can be prevented.

Furthermore, in the temperature adjustment section 70, the heating temperature of the region including the center of the wafer W caused by the second temperature adjustment section 72 can be slowly changed as the edge La of the IPA liquid film L moves toward the periphery. That is, the heating temperature caused by the second temperature adjustment section 72 can be changed so that the surface temperature of the wafer W in the region where the edge La is formed becomes a temperature range in which the Marangoni convection caused by the IPA liquid film is easily generated. In this case, the surface temperature of the region including the center of the wafer W becomes higher than the temperature T1, and the surface temperature of the wafer W can be appropriately changed within a range that does not affect the wafer W.

<3rd variant> Next, a variant of the temperature adjustment unit 70 will be described. As described above, if a temperature gradient is formed near the edge La of the IPA liquid film L in such a way that the temperature of the side where the IPA liquid film L exists becomes lower and the temperature of the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) becomes higher, Marangoni convection is generated at the edge La of the IPA liquid film L. By generating this Marangoni convection, the IPA liquid film L can generate condensation without forming a boundary layer by utilizing surface tension. Therefore, as long as the temperature gradient as described above can be formed on the surface of the wafer W, the structure of the temperature adjustment unit 70 can be appropriately changed.

Fig. 9(a) to Fig. 9(c) and Fig. 10(a) to Fig. 10(c) are diagrams of the temperature adjustment portion 70A of the third modification. Fig. 9(a) to Fig. 9(c) and Fig. 10(a) to Fig. 10(c) are diagrams corresponding to Fig. 4(a) to Fig. 4(c), respectively.

The temperature adjustment unit 70A is different from the temperature adjustment unit 70 in the following points. That is, in the temperature adjustment unit 70A, the first temperature adjustment unit 71 provided on the back side of the wafer W changes the heating temperature according to the position, thereby forming a temperature gradient on the surface of the wafer W. That is, the second temperature adjustment unit 72 is not used.

In FIG. 9( b), the heating temperature of each position caused by the first temperature adjustment unit 71 is displayed as a gradient. That is, by controlling the heating temperature by the first temperature adjustment unit 71, the heating temperature near the center of the wafer W becomes higher, and the heating temperature gradually decreases toward the periphery. As a result, as shown in FIG. 9( c), the surface temperature of the wafer W becomes a temperature gradient from the center of the wafer W to the periphery. That is, a temperature gradient is formed on the entire wafer W. In other words, in the example shown in FIG. 9, a temperature gradient is formed in both the drying object area A1 and the unprocessed area A2.

The temperature control section 70A includes a gas injection section 73, which can blow gas onto the surface of the wafer W instead of the second temperature control section 72. The gas injection section 73 blows gas such as nitrogen onto the surface of the wafer W. By injecting gas, an opening can be formed in the IPA liquid film L near the center of the wafer W.

The following describes the IPA discharge process using the temperature control unit 70A. Before the IPA discharge process, an IPA liquid film L is formed to cover the surface of the wafer W. As described above, the surface temperature of the wafer W is gradually reduced from the center to the outer periphery by the first temperature control unit 71 .

Here, an opening of the IPA liquid film L is formed near the center of the wafer W by the gas injection portion 73, so that the center of the wafer W is exposed. That is, the IPA liquid film L in the center of the wafer W is dried. Therefore, the area near the center of the wafer W becomes the drying target area A1, and the area on the outer peripheral side of the drying target area A1 becomes the untreated area A2. Thereby, the edge La (inner periphery) of the IPA liquid film L is formed in the center of the wafer W. When the edge La of the IPA liquid film L is formed, the temperature gradient formed on the entire surface of the wafer W is utilized to cause the IPA liquid film L to condense toward the low temperature area side. As described above, in the drying target area A1, the edge La of the IPA liquid film L moves toward the low temperature side, that is, the outer peripheral side of the wafer W, due to Marangoni convection caused by the difference in surface tension of the IPA liquid film L.

If condensation of the IPA liquid film L occurs, as shown in Figures 10(a) and 10(b), the edge La of the IPA liquid film L slowly moves toward the periphery. If the heating of the wafer W by the first temperature adjustment unit 71 is continued, the surface temperature near the center of the wafer W from which the IPA liquid film L has been removed (i.e., dried) is fixed to a predetermined temperature. On the other hand, as shown in Figure 10(c), the area where the IPA liquid film L remains on the periphery becomes a state of residual temperature gradient. Therefore, while Marangoni convection is formed near the edge La of the IPA liquid film L, the edge La moves toward the periphery of the wafer W. That is, along with the movement of the edge La, the annular drying target area A1 moves toward the periphery. In this way, by continuing the movement of the edge La of the IPA liquid film L due to the Marangoni convection, the IPA can be discharged from the surface of the wafer W at the periphery of the wafer W.

In this way, even when the temperature adjustment unit 70A is used, the drying target area A1 can be formed by controlling the temperature of the surface of the wafer W. That is, near the edge La of the IPA liquid film L, a temperature gradient is formed in such a way that the temperature of the side where the IPA liquid film L exists becomes lower and the temperature of the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) becomes higher. In this way, Marangoni convection is generated at the edge La of the IPA liquid film L. As a result, the IPA can be condensed toward the side where the surface temperature of the wafer W becomes lower while the IPA is discharged from the surface of the wafer W. Therefore, the pattern collapse of the surface of the wafer W when the IPA is removed from the surface of the wafer W can be prevented.

Furthermore, in the temperature adjustment section 70A, the heating temperature caused by the first temperature adjustment section 71 can be slowly changed as the edge La of the IPA liquid film L moves toward the periphery. That is, the heating temperature caused by the first temperature adjustment section 71 can be changed so that the surface temperature of the wafer W in the region where the edge La is formed becomes a temperature range in which Marangoni convection caused by the IPA liquid film is easily generated.

Furthermore, in the temperature adjustment section 70A, the heating temperature is controlled by the first temperature adjustment section 71 so that the heating temperature near the center of the wafer W becomes higher and the heating temperature gradually decreases toward the periphery. However, if a drying target area A1 can be formed in the area where the edge La of the IPA liquid film L is formed, the method of heating the wafer W using the first temperature adjustment section 71 is not particularly limited. For example, even if the first temperature adjustment section 71 is configured only near the center of the wafer W rather than in a shape corresponding to the entire shape of the wafer W, a ring-shaped drying target area A1 can be formed on the surface of the wafer W by controlling the heating temperature. Therefore, the formation of Marangoni convection in the edge La of the IPA liquid film L and the movement of the IPA liquid film L can be controlled by using the drying target area A1.

[Others] The embodiments disclosed herein should be considered as illustrative and non-restrictive in all respects. The embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope and gist of the attached patent application.

For example, in the above-mentioned embodiments, the drying liquid is described as IPA, but the drying liquid is not limited to IPA.

Furthermore, as described in the above embodiments and variations, the structure and arrangement of the temperature adjustment unit used as the substrate heating unit or the substrate cooling unit can be appropriately changed. For example, in the above embodiments, the first temperature adjustment unit 61, 71 for cooling the entire surface of the wafer W is described as being disposed on the back side of the wafer W (the holding unit 31 side), but it may also be disposed on the surface side of the wafer W.

Not only does it generate a temperature difference between different areas (drying target area A1 and untreated area A2) on the surface of the wafer W when viewed from above, it can also generate a temperature difference in the IPA liquid film L in the up and down direction (the height direction of the IPA liquid film L). For example, as shown in Figures 11 and 12, the temperature adjustment section 60 may also include: a first temperature adjustment section 61 disposed on the back side of the wafer W; and a fourth temperature adjustment section 64 (low temperature component) disposed on the surface side of the wafer W. The fourth temperature adjustment section 64 is configured to move along the surface of the wafer W above the wafer W. The fourth temperature adjustment section 64 can also be set to a temperature lower than the temperature of the first temperature adjustment section 61 used to heat the wafer W. That is, the fourth temperature adjustment part 64 can also be set to a temperature lower than the temperature of the wafer W heated by the first temperature adjustment part 61. Thereby, a temperature difference is generated between the upper part of the IPA liquid film L that contacts the fourth temperature adjustment part 64 and the lower part of the IPA liquid film L that contacts the wafer W, and the surface tension acting on the upper part becomes relatively large (Marangoni phenomenon). Therefore, the IPA liquid film L is pulled toward the fourth temperature adjustment part 64. Therefore, the control part 18 controls the action of the fourth temperature adjustment part 64, so that the fourth temperature adjustment part 64 moves along the surface of the wafer W (refer to the arrow S in Figures 11 and 12), so that the IPA liquid film L is also affected by the fourth temperature adjustment part 64 and moves along the surface of the wafer W. As a result, the control unit 18 can appropriately control the moving direction and moving speed of the fourth temperature adjustment unit 64, and discharge the IPA from the surface of the wafer W at a desired path and speed.

As shown in FIG11 , the fourth temperature adjustment section 64 may also be in a mesh shape. In this case, as shown in FIG11( b ), IPA is adsorbed in the mesh space by the capillary phenomenon. Therefore, the IPA liquid film L easily moves along the fourth temperature adjustment section 64 , so that IPA can be more effectively discharged from the surface of the wafer W.

As shown in FIG. 12( a), the fourth temperature adjustment section 64 may also be composed of one or more rod-shaped bodies. The rod-shaped body may also be in a straight line, a curved line, or a zigzag shape. When the fourth temperature adjustment section 64 is composed of a plurality of rod-shaped bodies, the plurality of rod-shaped bodies may also be arranged roughly in parallel and move along the arrangement direction. When the fourth temperature adjustment section 64 is composed of a plurality of rod-shaped bodies, IPA is also adsorbed in the grid space by the capillary phenomenon. Therefore, the IPA liquid film L easily moves with the fourth temperature adjustment section 64, so that IPA can be more effectively discharged from the surface of the wafer W.

As shown in FIG. 12( b ), the fourth temperature adjustment section 64 may also be formed of a plate-like body. The plate-like body may be in the shape of a flat plate or in the same shape as the wafer W. The bottom surface of the plate-like body facing the surface of the wafer W may also be in a concave-convex shape. When the bottom surface of the plate-like body is in a concave-convex shape, IPA may be adsorbed in the grid space by the capillary phenomenon. Therefore, the IPA liquid film L easily moves along with the fourth temperature adjustment section 64, so that IPA can be discharged from the surface of the wafer W more effectively.

Although not shown, the fourth temperature adjustment portion 64 may also be in a ring or other shape other than the above. The fourth temperature adjustment portion 64 may move linearly above the wafer W, or may rotate above the wafer W by rotating around a predetermined vertical axis.

The plurality of patterns W1 formed on the surface of the wafer W may also be arranged regularly along a predetermined direction. For example, as shown in FIG13 , when the plurality of patterns W1 are all roughly rectangular when viewed from above, the plurality of patterns W1 may also extend along a predetermined direction (the left-right direction of FIG13 ). In this case, a temperature gradient may also be formed on the surface of the wafer W so that the drying target area A1 moves along the shape of the pattern W1 toward the untreated area A2. For example, when the temperature adjustment portion 60 includes the first temperature adjustment portion 61 and the second temperature adjustment portion 62 of the first embodiment described above, the second temperature adjustment portion 62 may move along the shape of the pattern W1, along the long side direction of the pattern W1, or along the short side direction of the pattern W1. If the IPA moves along the shape of the pattern W1, the discharge of the IPA is not easily obstructed by the pattern W1. Therefore, even if the pattern W1 is formed on the surface of the wafer W, the movement of the IPA is still smooth, and the damage of the pattern W1 when the IPA is discharged from the surface of the wafer W can be prevented.

In order to form a temperature gradient on the surface of the wafer W so that the drying object area A1 moves toward the unprocessed area A2 along the shape of the pattern W1, the substrate processing device 10 may also include a means for obtaining the shape of the pattern W1. The obtaining means may also include: a photographing unit for photographing the surface of the wafer W; and a processing unit for processing the image of the surface of the wafer W photographed by the photographing unit to determine the shape of the pattern W1. When a notch is formed on the wafer W and the directionality of the notch with respect to the pattern W1 has been determined in advance, the obtaining means may be configured to obtain the position of the notch. The notch may be, for example, a groove (a U-shaped, V-shaped, etc. groove), or may be a straight line portion extending into a straight line (the so-called orientation plane). For example, the control unit 18 may also be configured to determine the discharge direction of IPA from the surface of the wafer W according to the shape of the pattern W1 obtained by the acquisition means. In this case, a temperature gradient is formed on the surface of the wafer W so that the IPA liquid film L moves from the drying target area A1 to the untreated area A2 along the determined discharge direction. Therefore, the discharge direction of IPA can be automatically set according to the shape of the pattern W1.

The substrate processing device 10 may also further include: a surrounding member that surrounds the wafer W by being located near the periphery of the wafer W. The top surface of the surrounding member may also be located at a height substantially equal to the surface of the wafer W and extend in a horizontal direction. The top surface of the surrounding member may also be an inclined surface that slopes downward from the inner periphery located at a height substantially equal to the surface of the wafer W toward the outer periphery. The surrounding member may also be set to a temperature lower than the temperature of the wafer W. The substrate processing device 10 may also further include: a gas supply unit that sprays a gas set to a temperature lower than the temperature of the wafer W toward the top surface of the surrounding member.

In any of the above examples, in order to facilitate the movement of the IPA, the wafer W may be tilted along the moving direction of the IPA (the moving direction of the drying target area A1).

[Example] Example 1: In an exemplary embodiment, a substrate processing device includes: a substrate holding portion for holding a substrate; a drying liquid supply portion for supplying drying liquid to the surface of the substrate held by the substrate holding portion; a temperature adjustment portion for changing the surface temperature of the substrate; and a control portion for controlling the temperature adjustment portion. The control portion controls the temperature adjustment portion so that a temperature difference is generated in the liquid film of the drying liquid supplied to the surface of the substrate. As described above, if a temperature difference is generated in the liquid film of the drying liquid supplied to the surface of the substrate, Marangoni convection is generated in the region where the temperature difference is generated in the liquid film, and the drying liquid is moved by the Marangoni convection. Therefore, the movement of the drying liquid can be used to discharge the drying liquid from the surface of the substrate. With such a configuration, compared with the case where the drying liquid is discharged from the surface of the substrate by external force, the influence on the pattern on the surface of the substrate can be reduced, and damage to the pattern when the drying liquid is removed from the surface of the substrate can be prevented.

Example 2: In the apparatus of Example 1, the surface of the substrate includes a drying target area to be subjected to drying treatment and an untreated area to be subjected to no drying treatment, and the control unit controls the temperature adjustment unit to generate a temperature difference between the drying target area and the untreated area. In this case, Marangoni convection is generated in the area between the drying target area and the untreated area in the liquid film, and the drying liquid is moved by the Marangoni convection. Therefore, the drying liquid can be discharged from the surface of the substrate by utilizing the movement of the drying liquid.

Example 3: In the apparatus of Example 2, the temperature adjustment unit includes a substrate cooling unit for cooling the substrate and a substrate heating unit for heating the substrate, and the substrate heating unit changes the heating position on the surface of the substrate by moving the linear heat source along the surface of the substrate. By using the substrate heating unit that moves the linear heat source along the surface of the substrate, the area where the Marangoni convection is generated can be precisely controlled, and the drying liquid can be removed appropriately.

Example 4: In the device of Example 2 or Example 3, the temperature adjustment section includes a substrate cooling section for cooling the substrate and a substrate heating section for heating the substrate, and the substrate cooling section cools the entire substrate. When the substrate cooling section is used to cool the entire substrate, the substrate heating section can be used to form a temperature gradient in the area where Marangoni convection is generated while the entire substrate is maintained at a predetermined temperature, so that the drying liquid can be removed appropriately.

Example 5: In the apparatus of Example 3, the substrate cooling unit makes the linear cooling source run parallel to the substrate heating unit along the surface of the substrate to cool the substrate. In the case of the above state, since the substrate cooling unit and the substrate cooling unit can be combined to form a temperature gradient in the desired area for generating Marangoni convection, the drying liquid can be removed appropriately.

Example 6: In any of the devices of Examples 2 to 5, the control unit controls the temperature adjustment unit to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to the untreated area. By forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to other areas, the movement of the drying liquid caused by the temperature gradient formed on the surface of the substrate becomes smooth, which can prevent the pattern from being damaged when the drying liquid is removed from the surface of the substrate.

Example 7: In the device of Example 6, a pattern of a predetermined shape is formed on the surface of the substrate, and the control unit controls the temperature adjustment unit to form a temperature gradient on the surface of the substrate so that the liquid film moves along the shape of the pattern from the drying target area to the untreated area. In this case, since the drying liquid moves along the shape of the pattern, the discharge of the drying liquid is not easily blocked by the pattern. Therefore, even if a pattern is formed on the surface of the substrate, the movement of the drying liquid is still smooth, which can prevent the pattern from being damaged when the drying liquid is discharged from the surface of the substrate.

Example 8: In the apparatus of Example 2, the temperature adjustment unit includes a substrate heating unit for heating a portion of the surface of the substrate, and the control unit increases the heating amount of the heating unit as the time for forming the temperature gradient on the surface of the substrate elapses. By using such a substrate heating unit, since a temperature gradient can be formed in a desired area for generating Marangoni convection, the drying liquid can be removed appropriately.

Example 9: In the device of Example 1, the temperature adjustment unit includes a low-temperature component set to a lower temperature than the substrate, and the control unit controls the temperature adjustment unit so that the low-temperature component moves along the surface of the substrate above the substrate when the low-temperature component is in contact with the liquid film. In this case, the portion of the liquid film in contact with the low-temperature component has a lower temperature than the portion of the liquid film in contact with the substrate, and the surface tension becomes relatively larger (Marangoni phenomenon). Therefore, the liquid film is pulled toward the low-temperature component. Therefore, by moving the low-temperature component along the surface of the substrate, the liquid film is also affected by the low-temperature component and moves along the surface of the substrate. As a result, the moving direction and moving speed of the low-temperature component can be appropriately controlled while the drying liquid can be discharged from the surface of the substrate at a desired path and speed.

Example 10: In any one of the apparatuses of Examples 1 to 9, the substrate holding portion can tilt the substrate. By setting a structure that allows the substrate to be tilted, the movement of the drying liquid by Marangoni convection can be promoted, so the removal speed of the drying liquid can be accelerated.

Example 11: In the device of Example 2, the temperature adjustment section includes: a substrate cooling section for cooling the entire substrate; and a substrate heating section for heating the substrate including the center. By cooling the entire substrate with the substrate cooling section and heating the substrate including the center, a temperature gradient can be formed that spreads from the substrate including the center into a ring shape. Therefore, the drying liquid can be moved toward the periphery of the substrate by Marangoni convection, and the drying liquid can be properly removed.

Example 12: In the substrate processing apparatus of Example 2, the temperature adjustment unit includes a substrate heating unit, which can form a temperature gradient in which the heating temperature of the region including the center of the substrate is the highest and the heating temperature decreases toward the periphery. By using the above-mentioned substrate heating unit, a temperature gradient that spreads from the region including the center of the substrate into a ring shape can be formed. Therefore, the drying liquid can be moved toward the periphery of the substrate by Marangoni convection, and the drying liquid can be properly removed.

Example 13: In another exemplary embodiment, a substrate processing method includes: supplying a drying liquid to a surface of a substrate held by a substrate holding portion; and causing a temperature difference in a liquid film of the drying liquid to discharge the drying liquid from the surface of the substrate. In this case, the same effect as in Example 1 can be achieved.

Example 14: In the method of Example 13, the surface of the substrate on which the liquid film is formed includes: a drying target area to be subjected to drying treatment, and an untreated area to be subjected to no drying treatment, and the step of discharging the drying liquid may also include the following step: forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to the untreated area. By setting such a state, the movement of the liquid film of the drying liquid can be precisely controlled by using the temperature gradient, so that the drying liquid can be appropriately removed.

Example 15: In the method of Example 14, the step of discharging the drying liquid by forming a pattern of a predetermined shape on the surface of the substrate includes the following steps: forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to the untreated area along the shape of the pattern. In this case, the same effect as Example 7 can be achieved.

Example 16: The method of Example 15 may further include a step of determining a discharge direction of the drying liquid by obtaining the shape of the pattern, and the step of discharging the drying liquid includes the following steps: forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to the untreated area along the determined discharge direction. In this case, the discharge direction of the drying liquid can be automatically set according to the shape of the pattern.

Example 17: In any of the methods of Examples 14 to 16, the step of draining the drying liquid includes the following step: by moving the heating position from one side to the other side of the peripheral portion of the substrate, the liquid film of the drying liquid is moved. By setting such a state, the drying liquid can be drained by moving the heating position from one side to the other side of the peripheral portion of the substrate. Therefore, the drying liquid can be removed appropriately.

Example 18: In another exemplary embodiment, a computer-readable recording medium records a program for causing a device to execute any of the methods in Examples 13 to 17. In this case, the same effect as the above-mentioned substrate processing method can be achieved. In this specification, the computer-readable recording medium includes non-transitory tangible media (non-transitory computer recording medium: non-transitory computer recording medium) (such as various main memory devices or auxiliary memory devices), transmission signals (transitory computer recording medium: transient computer recording medium) (such as data signals that can be provided via the Internet).

1: Substrate processing system 2: Loading and unloading station 3: Processing station 4: Control device 10: Substrate processing device 11: Carrier loading unit 12: Transport unit 13: Substrate transport unit 14: Transfer unit 15: Transport unit 16: Processing unit 17: Substrate transport unit 18: Control unit 19: Memory unit 20: Processing chamber 21: FFU (Fan filter unit) 30: Substrate holding mechanism 31: Holding unit 32: Support unit 33: Drive unit 40: Processing liquid supply unit 41: Nozzle 50: Recovery cup 51: Liquid discharge port 52: Exhaust port 60,60A,60B,70,70A: Temperature adjustment 61,71: 1st temperature adjustment section 62,72: 2nd temperature adjustment section 63: 3rd temperature adjustment section 64: 4th temperature adjustment section (low temperature component) 73: gas injection section 80: treatment liquid supply source 81: chemical liquid supply source 82: DIW supply source 83: IPA supply source A1: drying target area A2: untreated area C: carrier L: IPA liquid film La: edge Lb: remaining part S: arrow S01~S04: step T1,T2: temperature V1,V2,V3: valve W: wafer W1: pattern Wa: end Wb: end on the left side of the diagram Wc: end on the right side of the diagram

[Figure 1] Figure 1 is a schematic top view of a substrate processing system of an exemplary embodiment. [Figure 2] Figure 2 is a schematic diagram of a substrate processing device of an exemplary embodiment. [Figure 3] Figure 3 is a flow chart illustrating a substrate processing method of an exemplary embodiment. [Figure 4] Figures 4(a), 4(b), and 4(c) are explanatory diagrams of IPA discharge processing using the temperature adjustment section of the first embodiment. [Figure 5] Figures 5(a), 5(b), and 5(c) are explanatory diagrams of IPA discharge processing using the temperature adjustment section of a modified example of the first embodiment. [Figure 6] Figures 6(a), 6(b), and 6(c) are explanatory diagrams of IPA discharge processing using the temperature adjustment section of a modified example of the first embodiment. [Figure 7] Figures 7(a), 7(b), and 7(c) are explanatory diagrams of the IPA discharge process using the temperature adjustment section of the modified example of the second embodiment. [Figure 8] Figures 8(a), 8(b), and 8(c) are explanatory diagrams of the IPA discharge process using the temperature adjustment section of the modified example of the second embodiment. [Figure 9] Figures 9(a), 9(b), and 9(c) are explanatory diagrams of the IPA discharge process using the temperature adjustment section of the modified example of the second embodiment. [Figure 10] Figures 10(a), 10(b), and 10(c) are explanatory diagrams of the IPA discharge process using the temperature adjustment section of the modified example of the second embodiment. [Figure 11] Figures 11(a) and 11(b) are explanatory diagrams of other examples of IPA discharge processing using a temperature adjustment section. [Figure 12] Figures 12(a) and 12(b) are explanatory diagrams of other examples of IPA discharge processing using a temperature adjustment section. [Figure 13] Figure 13 is an explanatory diagram of a case where a plurality of patterns are regularly arranged along a predetermined direction.

60: Temperature adjustment unit

61: 1st temperature adjustment unit

62: Second temperature adjustment unit

A1: Dry object area

A2: Unprocessed area

L:IPA liquid membrane

La:Edge

Lb: Remaining part

S: Arrow

T1, T2: Temperature

W: Wafer

W1: Pattern

Wa: End

Claims (19)

A substrate processing device includes: a substrate holding part for holding a substrate; a drying liquid supply part for supplying drying liquid to the surface of the substrate held by the substrate holding part; a temperature adjustment part for changing the surface temperature of the substrate; and a control part for controlling the temperature adjustment part, wherein the control part controls the temperature adjustment part so that a liquid film of the drying liquid supplied to the surface of the substrate generates a temperature difference; and the control part controls the temperature adjustment part so that the drying liquid supplied to the surface of the substrate does not volatilize. The substrate processing device of claim 1, wherein the surface of the substrate includes: a drying target area to be subjected to drying treatment; and an untreated area not subjected to drying treatment, and the control unit controls the temperature adjustment unit to generate a temperature difference between the drying target area and the untreated area. The substrate processing device of claim 2, wherein the temperature adjustment section includes: a substrate cooling section for cooling the substrate; and a substrate heating section for heating the substrate, wherein the substrate heating section changes the heating position on the surface of the substrate by moving a linear heat source along the surface of the substrate. As in claim 2, the substrate processing device, wherein the temperature adjustment section includes: a substrate cooling section for cooling the substrate; and a substrate heating section for heating the substrate, wherein the substrate cooling section cools the entire substrate. As in claim 3, the substrate processing device, wherein the temperature adjustment section includes: a substrate cooling section for cooling the substrate; and a substrate heating section for heating the substrate, wherein the substrate cooling section cools the entire substrate. A substrate processing device as claimed in claim 3, wherein the substrate cooling section allows a linear cooling source to run parallel to the substrate heating section along the surface of the substrate to cool the substrate. A substrate processing device as claimed in any one of claims 2 to 6, wherein the control unit forms a temperature gradient on the surface of the substrate by controlling the temperature adjustment unit so that the liquid film moves from the drying target area to the unprocessed area. As in claim 7, a substrate processing device is provided, wherein a pattern of a predetermined shape is formed on the surface of the substrate, and the control unit forms a temperature gradient on the surface of the substrate by controlling the temperature adjustment unit, so that the liquid film moves from the drying target area to the unprocessed area along the shape of the pattern. As in claim 2, the substrate processing device, wherein the temperature adjustment unit includes a substrate heating unit for heating a portion of the surface of the substrate, and the control unit increases the heating amount of the heating unit as the time for the temperature gradient to be formed on the surface of the substrate passes. The substrate processing device of claim 1, wherein the temperature adjustment unit includes a low-temperature component set to a lower temperature than the substrate, and the control unit controls the temperature adjustment unit so that the low-temperature component moves along the surface of the substrate above the substrate when the low-temperature component is in contact with the liquid film. A substrate processing device as claimed in any one of claims 1 to 6 and 8 to 10, wherein the substrate holding portion can tilt the substrate. As in claim 2, the substrate processing device, wherein the temperature adjustment section comprises: a substrate cooling section; cooling the entire substrate; and a substrate heating section, heating the substrate including the center area. As in claim 2, the substrate processing device, wherein the temperature adjustment section includes a substrate heating section capable of forming a temperature gradient, wherein the heating temperature of the region including the center of the substrate is the highest, and the heating temperature becomes lower toward the periphery. A substrate processing method includes the following steps: supplying a drying liquid to the surface of a substrate held by a substrate holding portion; and discharging the drying liquid from the surface of the substrate by causing a temperature difference in the liquid film of the drying liquid; when causing the temperature difference in the liquid film of the drying liquid, the drying liquid is prevented from volatile. As in claim 14, the substrate processing method, wherein the surface of the substrate on which the liquid film is formed includes: a drying target area to be subjected to drying treatment; and an untreated area not subjected to drying treatment, and the step of discharging the drying liquid includes the following steps: forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to the untreated area. As in claim 15, a substrate processing method is provided, wherein a pattern of a predetermined shape is formed on the surface of the substrate, and the step of discharging the drying liquid includes the following steps: forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to the untreated area along the shape of the pattern. The substrate processing method of claim 16 further includes: determining the discharge direction of the drying liquid by obtaining the shape of the pattern, and the step of discharging the drying liquid includes the following steps: forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to the untreated area along the determined discharge direction. A substrate processing method as claimed in any one of claims 15 to 17, wherein the step of discharging the drying liquid includes the following step: moving the liquid film of the drying liquid by moving the heating position from one side of the peripheral portion of the substrate to the other side. A computer-readable recording medium recording a program for causing a substrate processing device to execute a substrate processing method as described in any one of claims 14 to 17.

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