TWI860198B - A temperature sensing x'tal, a manufacturing method thereof and an electronic device - Google Patents

Abstract

The present application relates to a Temperature Sensing X’ tal, a manufacturing method thereof and an electronic device. The Temperature Sensing X’ tal includes a crystal resonator, a thermosensitive resistor, an insulating layer and a first electrode structure. The crystal resonator includes a vibration element and a hermetic packaging structure surrounding at a periphery of the vibration element. The thermistor is provided on one side of the hermetically sealed structure. The insulating layer covers at least one side of the thermistor and the hermetic packaging structure. The insulating layer has a via hole. The via hole has a conductive material therein. The insulating layer has an insulating cavity. The insulating cavity includes a sealing cavity and/or a semi-enclosed cavity. The insulating cavity has a gas or a vacuum therein. The first electrode structure is disposed on the insulating layer and is electrically connected to the thermistor via the conductive material in the via hole.

Description

A thermal-sensitive crystal, a manufacturing method thereof, and an electronic device

This application relates to the field of temperature sensitive crystal (Temperature Sensing X’ tal, TSX) technology, and in particular to a temperature sensitive crystal and its manufacturing method and electronic equipment.

In the use of electronic equipment, it is usually necessary to use a high-stability clock, such as a thermistor (Temperature Sensing X’ tal, TSX) with an external processing chip or a temperature compensation crystal oscillator. Generally, the thermistor needs to be as close to the crystal resonator as possible, so that the temperature of the thermistor can be closer to the temperature of the crystal oscillator element. However, since quartz crystals are generally piezoelectric products, they have a natural hysteresis characteristic for temperature. Therefore, the faster the reaction to external temperature changes, the lower the latency (Low Latency) required for existing high-speed network communications.

However, with the development demand of miniaturization of various electronic devices, the package size of thermistors has also been gradually miniaturized. Since existing thermistors generally need to be placed in a cavity for protection, it is difficult to reduce the size. In addition, miniaturized thermistors have problems such as too fast thermal response and the thermal capacity of the ceramic base cannot be reduced due to the material properties of the ceramic base itself. It is also necessary to take into account the requirements of traditional hermetic packaging and the bending strength when placed on the circuit board. These are all technical issues that thermistors need to consider.

In view of this, it is necessary to provide a thermistor crystal and its manufacturing method and electronic equipment that can cope with miniaturization and limited thermal capacity.

In a first aspect, an embodiment of the present application provides a thermistor, which includes a crystal resonator, a thermistor, an insulating layer and a first electrode structure. The crystal resonator includes a vibration element and an airtight packaging structure arranged around the vibration element; the thermistor is arranged on one side of the airtight packaging structure; the insulating layer covers at least one side of the thermistor and the airtight packaging structure, the insulating layer has a through hole, the through hole has a conductive material, the insulating layer has a heat-insulating cavity, the heat-insulating cavity includes a sealed cavity and/or a semi-enclosed cavity, and the heat-insulating cavity has a gas or a vacuum; the first electrode structure is arranged on the insulating layer, and is electrically connected to the thermistor through the conductive material in the through hole.

In one embodiment, the crystal resonator is a ceramic packaged crystal resonator, the hermetic package structure includes a ceramic substrate having a cavity, a cover plate provided on the ceramic substrate, and a second electrode structure provided on the ceramic substrate, the ceramic substrate is provided with a conductor structure, the vibration element is provided in the cavity and connected to the ceramic substrate through an adhesive, and the second electrode structure is also electrically connected to the conductor structure and the thermistor.

In one embodiment, the crystal resonator is a fully crystalline packaged crystal resonator, the airtight package structure includes a first seal disposed on one side of the vibration element, a second seal disposed on the other side of the vibration element, and a second electrode structure disposed on the first seal, the first seal, the vibration element and the second seal all include crystalline materials, the second electrode structure is electrically connected to the thermistor, the thermistor is disposed on the first seal and electrically connected to the second electrode structure, and the insulating layer covers the thermistor and the first seal.

In one embodiment, the second electrode structure is electrically connected to the thermistor; the insulating layer is disposed on at least one side of the thermistor and the hermetic packaging structure by a first semiconductor deposition process, the via is formed in the insulating layer by a first semiconductor etching process, the conductive material in the via is formed in the via by a second semiconductor deposition process, the first electrode structure is formed on the insulating layer by the second semiconductor deposition process or a third semiconductor deposition process; the second electrode structure is formed on the first seal by a fourth semiconductor deposition process.

In one embodiment, the sealed cavity contains gas, which is air.

In one embodiment, the sealed cavity is formed by etching a portion of the insulating layer through a third semiconductor etching process to form a semi-enclosed cavity, and further by covering the opening of the semi-enclosed cavity with another portion of the insulating layer.

In one embodiment, the heat-insulating cavity includes the semi-enclosed cavity, and the semi-enclosed cavity is a groove structure arranged around the first electrode structure.

In the second aspect, the embodiment of the present application provides a method for manufacturing a thermistor, which includes: providing a thermistor with a built-in temperature sensor; providing a crystal resonator, and setting the crystal resonator on one side of the thermistor, the crystal resonator including a vibration element and a hermetic sealing structure arranged around the vibration element; forming an insulating layer having a via hole and a heat-insulating cavity on at least one side of the thermistor and the hermetic sealing structure, the via hole having a conductive material, the insulating layer having a heat-insulating cavity, the heat-insulating cavity including a sealed cavity and/or a semi-enclosed cavity, the heat-insulating cavity having a gas or a vacuum; and forming a first electrode structure on the insulating layer, and making the first electrode structure electrically connected to the thermistor through the conductive material in the via hole.

In one embodiment, the crystal resonator is a ceramic packaged crystal resonator or a fully crystalline packaged crystal resonator, the insulating layer is deposited on at least one side of the thermistor and the hermetic package structure by a first semiconductor deposition process, the via hole is formed in the insulating layer by a semiconductor etching process, the conductive material in the via hole is formed in the via hole by a second semiconductor deposition process, and the first electrode structure is formed on the insulating layer by a third semiconductor deposition process.

In one embodiment, the heat-insulating cavity includes the sealed cavity, and the sealed cavity contains gas, which is air; the sealed cavity is formed by etching part of the insulating layer through a third semiconductor etching process to form a semi-closed cavity, and further by covering the opening of the semi-closed cavity with another part of the insulating layer; the heat-insulating cavity includes the semi-closed cavity, and the semi-closed cavity is a groove structure arranged around the first electrode structure.

In a third aspect, the present application embodiment provides an electronic device, which includes a circuit board, on which the thermistor crystal described in any of the above embodiments is disposed.

In the thermistor and its manufacturing method and electronic equipment provided by the embodiment of the present application, the thermistor is directly set on one side of the airtight packaging structure of the packaged crystal resonator, and then the crystal resonator and the thermistor are sealed and protected by an insulating layer. There is no need to set a supporting substrate and its cavity for encapsulating the crystal resonator and the thermistor, which avoids the problem that the size of the thermistor is difficult to reduce due to the supporting substrate and its cavity, and can realize the packaging of miniaturized thermistor crystals. In addition, because the insulating layer covers the thermistor, the thermistor is not exposed to the outside, which can better protect the thermistor. In addition, the first electrode structure is arranged on the insulating layer, which can cope with the stress generated by the customer application end when the thermistor is placed on the circuit board, and has a buffering effect, thereby improving the reliability of the thermistor and the circuit board of the electronic device having the thermistor.

Furthermore, the heat-insulating cavity provided by the insulating layer has a good heat-insulating effect when there is gas in the heat-insulating cavity, and can improve the thermal resistance to delay the thermal shock of the external heat source to the resonator, and has a good heat preservation effect, so that the thermistor clock oscillation is more stable. In addition, the thermistor generally uses a ceramic base and does not need to be directly welded to the circuit board, so there is no need to consider the bending strength, so that the thermistor can focus on optimizing the size, thickness and/or material, improving the performance of the thermistor and reducing the difficulty and cost of design.

30: Thermistor crystal

31: Crystal resonator

311: Vibration element

312:Packaging structure

3121a: Cavity

3121: Ceramic substrate

3122: Cover plate

3121b: Conductor structure

3121c: Conductive adhesive

3123: Second electrode structure

32: Thermistor

33: Insulation layer

331: Conductive hole

34: First electrode structure

36: Insulation cavity

40: Thermistor crystal

41: Crystal resonator

411: Vibration element

412:Packaging structure

4123: Second electrode structure

4124: First seal

4125: Second seal

42: Thermistor

43: Insulation layer

431: Conductive hole

44: First electrode structure

46: Insulation cavity

50: Thermistor crystal

51: Crystal resonator

52: Thermistor

53: Insulation layer

531: Conductive hole

54: First electrode structure

56: Insulation cavity

561: Semi-closed cavity

80: Electronic equipment

81: Circuit board

S71-S74: Steps

In order to more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the following will briefly introduce the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are only embodiments of this application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without creative labor.

Figure 1 is a schematic diagram of the cross-sectional structure of the thermosensitive crystal provided in Embodiment 1 of this application.

Figure 2 is a schematic diagram of the top surface of the thermosensitive crystal provided in Embodiment 1 of this application.

Figure 3 is a schematic diagram of the bottom surface of the thermosensitive crystal provided in Example 1 of this application.

Figure 4 is a schematic diagram of the cross-sectional structure of the thermosensitive crystal provided in the second embodiment of the present application.

Figure 5 is a schematic diagram of the cross-sectional structure of the thermosensitive crystal provided in Embodiment 3 of this application.

Figure 6 is a schematic diagram of the bottom surface of the thermosensitive crystal provided in Example 3 of this application.

Figure 7 is a flow chart of the method for manufacturing a thermosensitive crystal provided in Embodiment 4 of this application.

Figure 8 is a schematic block diagram of the electronic device provided in Embodiment 5 of this application.

In order to facilitate the understanding of this application, the following will refer to the relevant drawings to describe this application in more detail. The drawings provide the preferred implementation of this application. However, this application can be implemented in many different forms and is not limited to the implementation described herein. On the contrary, the purpose of providing these implementations is to make the disclosure of this application more thoroughly understood.

It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected" to another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "inside", "outside", "left", "right" and similar expressions used in this article are for illustrative purposes only and do not represent the only implementation method.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of this application. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and/or" used herein includes any and all combinations of one or more related listed items.

The following is a further detailed description of the thermistor crystal and its manufacturing method and electronic equipment provided in the embodiment of this application in conjunction with Figures 1-6.

Implementation Example 1

Please refer to Figures 1 to 3. Figure 1 is a schematic diagram of the cross-sectional structure of the thermistor 30 provided in the first embodiment of the present application, Figure 2 is a schematic diagram of the top surface of the thermistor 30 provided in the first embodiment of the present application, and Figure 3 is a schematic diagram of the bottom surface of the thermistor 30 provided in the first embodiment of the present application. The thermistor 30 includes a crystal resonator 31, a thermistor 32, an insulating layer 33 and a first electrode structure 34.

The crystal resonator 31 includes a vibration element 311 and a packaging structure 312 arranged around the vibration element 311. It can be understood that the crystal resonator 31 is a packaged crystal resonator device. In this embodiment, the crystal resonator 31 is mainly described as a ceramic packaged crystal resonator.

The thermistor 32 is disposed on one side of the airtight packaging structure 312.

The insulating layer 33 covers at least one side of the thermistor 32 and the airtight packaging structure 312, and the insulating layer 33 has a via hole 331, and the via hole 331 has a conductive material. The first electrode structure 34 is disposed on the insulating layer 33, and is electrically connected to the thermistor 32 via the conductive material in the via hole 331. It can be understood that the first electrode structure 34 can be a pad structure (such as a solder pad), and the insulating layer 33 is a resin material; the first electrode structure 34 includes multiple first electrodes (i.e., multiple pads), and the number of the vias 331 can correspond to the number of the first electrodes, so that the first electrodes can be electrically connected to the conductive material in the corresponding vias 331. As shown in FIG3, in this embodiment, the number of first electrodes of the first electrode structure 34 is four, which are respectively arranged at the four corners of the bottom of the thermistor crystal 30.

In this embodiment, the insulating layer 33 also has an insulating cavity 36, which is a sealed cavity. The insulating cavity 36 contains gas or vacuum, preferably gas, such as air but not limited to air. The number of the insulating cavities 36 can be one or more, which can be set according to actual needs. It can be understood that the sealed cavity is a cavity that is not connected to the periphery of the thermistor crystal 30. However, in other embodiments, the insulating cavity 36 can also be a semi-enclosed cavity, that is, the insulating cavity 36 is an open cavity or a hollowed-out area connected to the periphery of the thermistor crystal 30, such as at least one side, two opposite sides or multiple sides of the insulating cavity 36 have an opening connected to the periphery of the thermistor crystal 30.

In the thermistor 30 provided in the embodiment of the present application, the thermistor 32 is directly arranged on one side of the package structure 312 of the packaged crystal resonator 31, and the thermistor 32 is sealed and protected by the insulating layer 33. There is no need to set a supporting substrate and its cavity for encapsulating the crystal resonator 31 and the thermistor 32, thus avoiding the problem that the size of the thermistor 30 is difficult to reduce due to the supporting substrate and its cavity, and the packaging of the miniaturized thermistor can be realized. In addition, since the insulating layer 33 covers the thermistor 32, the thermistor 32 is not exposed to the outside, and the thermistor 32 can be better protected. In addition, the first electrode structure 34 is arranged on the insulating layer 33, which can cope with the stress generated by the customer application end when the thermistor 30 is placed on the circuit board, and has a buffering effect, thereby improving the reliability of the thermistor 30 and the circuit board having the thermistor 30.

Furthermore, through the heat-insulating cavity 36 in the insulating layer 33, if there is gas in the heat-insulating cavity 36, it has a better heat-insulating effect, can improve the thermal resistance to delay the thermal shock of the external heat source to the resonator, and has a better heat preservation effect, so that the thermistor clock 30 oscillates more stably. In addition, the thermistor 30 generally uses a ceramic base and does not need to be directly welded to the circuit board, so there is no need to consider the bending strength, so that the thermistor 30 can focus on optimizing the size, thickness and/or material, improving the performance of the thermistor 30 and reducing the difficulty and cost of design.

Specifically, the airtight package structure 312 may include a ceramic substrate 3121 having a cavity 3121a, a cover plate 3122 disposed on the ceramic substrate 3121, and a second electrode structure 3123 disposed on the ceramic substrate 3121. The ceramic substrate 3121 may be provided with a conductor structure 3121b. The vibration element 311 is disposed in the cavity 3121a and may be electrically connected to the conductor structure 3121b via a conductive adhesive 3121c (such as conductive glue). The second electrode structure 3123 is also electrically connected to the conductor structure 3121b. The second electrode structure 3123 is also electrically connected to the thermistor 32, so that the thermistor 32 is electrically connected to the crystal resonator 31. It can be understood that the second electrode structure 3123 can be a pad structure, the second electrode structure 3123 can include multiple second electrodes (i.e., multiple pads), the number of the conductor structure 3121b can correspond to the number of the second electrodes, so that the second electrode can be electrically connected to the corresponding conductor structure 3121b. The vibration element 311 is a crystalline material.

Furthermore, in this embodiment, the second electrode structure 3123 can be electrically connected to the thermistor 32.

In this embodiment, the insulating layer 33 can be deposited on one side of the thermistor 32 and the airtight packaging structure 312 by a first semiconductor deposition process, the via 331 can be formed in the insulating layer 33 by a semiconductor etching process, the conductive material is formed in the via 331 by a second semiconductor deposition process, and the first electrode structure 34 is formed on the insulating layer 33 by a third semiconductor deposition process. It can be understood that the semiconductor etching process can be achieved by sequentially depositing the material to be etched and the photosensitive etchant and exposing with a patterned mask, thereby realizing the patterning of the material layer to be etched.

Implementation Example 2

Please refer to Figure 4, which is a cross-sectional view of the thermistor crystal 40 provided in the second embodiment of the present application. The thermistor crystal 40 in the second embodiment is basically the same as the thermistor crystal 30 in the first embodiment, that is, the description of the thermistor crystal 30 in the first embodiment is basically applicable to the thermistor crystal 40 in the second embodiment. The following will mainly describe the differences between the thermistor crystal 40 in the second embodiment and the thermistor crystal 30 in the first embodiment.

In the thermistor 40 of the second embodiment, the first seal 4124, the second seal 4125 and the vibration element 411 are all made of crystal materials, that is, the crystal resonator 41 is a fully crystal packaged crystal resonator, and the packaging structure 412 includes a first seal 4124 disposed on one side of the vibration element 411, a second seal 4125 disposed on the other side of the vibration element 411, and a second electrode structure 4123 disposed on the first seal 4124. The second electrode structure 4123 is also electrically connected to the thermistor 42.

Specifically, in this embodiment, the thermistor 42 is disposed on the first seal 4124 and is electrically connected to the second electrode structure 4123, and the insulating layer 43 covers the thermistor 42 and the first seal 4124.

In this embodiment, the insulating layer 43 also has an insulating cavity 46, which is a sealed cavity. The insulating cavity 46 contains gas or vacuum, preferably gas, such as air but not limited to air. The number of the insulating cavity 46 can be one or more, which can be set according to actual needs.

It can be understood that, basically the same as the first embodiment, the thermistor 42 is directly arranged on one side of the package structure 412 of the packaged crystal resonator 41, and the thermistor 42 is sealed and protected by the insulating layer 43, and there is no need to set a supporting substrate and its cavity for packaging the crystal resonator 41 and the thermistor 42, thus avoiding the problem that the size of the thermistor 40 is difficult to reduce due to the supporting substrate and its cavity, and the packaging of the miniaturized thermistor can be realized. In addition, since the insulating layer 43 covers the thermistor 42, the thermistor 42 is not exposed to the outside, and the thermistor 42 can be better protected. In addition, the first electrode structure 44 is disposed on the insulating layer 43, and can cope with the stress generated by the customer application end when the thermistor 40 is placed on the circuit board, and has a buffering effect, thereby improving the reliability of the thermistor 40 and the circuit board having the thermistor 40.

Furthermore, through the heat-insulating cavity 46 in the insulating layer 43, if the heat-insulating cavity 46 is air, it has a better heat-insulating effect, can improve the thermal resistance to delay the thermal shock of the external heat source to the resonator, and has a better heat preservation effect, so that the thermistor clock 40 oscillates more stably. In addition, the thermistor 40 generally uses a ceramic base and does not need to be directly welded to the circuit board, so there is no need to consider the bending strength, so that the thermistor 40 can focus on optimizing the size, thickness and/or material, improving the performance of the thermistor 40 and reducing the difficulty and cost of design.

Implementation Example 3

Please refer to Figures 5 and 6. Figure 5 is a cross-sectional view of the thermistor crystal 50 provided in the third embodiment of the present application, and Figure 6 is a bottom schematic view of the thermistor crystal 50 provided in the third embodiment of the present application. The thermistor crystal 50 in the third embodiment is basically the same as the thermistor crystal 30 in the first embodiment. In other words, the description of the thermistor crystal 30 in the first embodiment is basically applicable to the thermistor crystal 50 in the third embodiment. The following mainly describes the differences between the thermistor crystal 50 in the third embodiment and the thermistor crystal 30 in the first embodiment.

In the thermistor crystal 50, the heat-insulating cavity 56 of the insulating layer 53 also includes a semi-enclosed cavity 561. In this embodiment, the semi-enclosed cavity 561 is a groove structure arranged around the first electrode structure.

It can be understood that the semi-enclosed cavity 561 can better provide heat insulation and facilitate heat dissipation at the bottom, thereby improving the reliability of the thermistor crystal 50 and the circuit board having the thermistor crystal 50.

Implementation Example 4

Please refer to Figures 1 to 7. Figure 7 is a flow chart of the method for manufacturing a thermosensitive crystal provided in Embodiment 4 of the present application. The manufacturing method includes steps S71-S74.

Step S71, providing a thermistor. As shown in Figures 1 to 4, the thermistor can be the thermistor 32, 42, 52 described in any one of Examples 1 to 3.

Step S72, providing a crystal resonator, and setting the crystal resonator on one side of the thermistor, the crystal resonator includes a vibration element and a hermetic sealing structure arranged around the vibration element. Specifically, as shown in Figures 1 to 6, the crystal resonator is a ceramic packaged crystal resonator or a fully crystal packaged crystal resonator, that is, it can be the crystal resonator 31, 41, 51 described in any one of Embodiments 1 to 3, which will not be described in detail here.

Step S73, forming an insulating layer having a via hole and a heat-insulating cavity on at least one side of the thermistor and the airtight packaging structure, wherein the via hole contains a conductive material, the heat-insulating cavity includes a sealed cavity and/or a semi-enclosed cavity, and the heat-insulating cavity contains gas or vacuum. It can be understood that the structure of the insulating layer 33, 43, 53, the via holes 331, 431, 531 and the heat-insulating cavity 36, 46, 56, and the conductive material of the via holes 331, 431, 531 have been described in detail in the first embodiment, and will not be repeated here.

Step S74, forming a first electrode structure on the insulating layer, and making the first electrode structure electrically connected to the thermistor through the conductive material in the via hole. It can be understood that the first electrode structures 34, 44, and 54 have been described in detail in the first embodiment, and will not be repeated here.

Embodiment 5

Please refer to Figure 8, which is a block diagram of an electronic device 80 provided in Embodiment 5 of the present application. The present application embodiment also provides an electronic device 80, which can be a portable electronic device such as a mobile phone, a tablet computer, a display, a notebook computer, a digital camera, etc., but is not limited to the above. The electronic device 80 can include a circuit board 81, and the circuit board 81 is provided with the thermistor crystal 30, 40, 50 described in any of the above embodiments.

The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification. The above-mentioned embodiments only express several implementation methods of this application, and the description is more specific and detailed, but it cannot be understood as a limitation on the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, without departing from the concept of this application, several variations and improvements can be made, which all belong to the protection scope of this application. Therefore, the protection scope of the patent of this application shall be based on the attached claims.

30: Thermistor crystal

31: Crystal resonator

311: Vibration element

312:Packaging structure

3121: Ceramic substrate

3121a: Cavity

3121b: Conductor structure

3121c: Conductive adhesive

3122: Cover plate

3123: Second electrode structure

32: Thermistor

33: Insulation layer

331: Conductive hole

34: First electrode structure

36: Insulation cavity

Claims (10)

A thermal-sensitive crystal, comprising: a crystal resonator, comprising a vibration element and an airtight packaging structure arranged around the vibration element; a thermistor, arranged on a first side of the periphery of the airtight packaging structure; an insulating layer, covering the thermistor and the first side of the airtight packaging structure, the insulating layer having a through hole, wherein the through hole has a conductive material; and a first electrode structure, arranged on the insulating layer, and electrically connected to the first electrode structure via the conductive material in the through hole. The thermistor is electrically connected; wherein the insulating layer is disposed on the first side of the thermistor and the airtight packaging structure by a first semiconductor deposition process, the via hole is formed in the insulating layer by a first semiconductor etching process, the conductive material in the via hole is formed in the via hole by a second semiconductor deposition process, and the first electrode structure is formed on the insulating layer by the second semiconductor deposition process or a third semiconductor deposition process. The thermistor as described in claim 1, wherein the crystal resonator is a ceramic packaged crystal resonator, the airtight package structure comprises a ceramic substrate having a cavity, a cover plate covered on the ceramic substrate, and a second electrode structure provided on the ceramic substrate, the ceramic substrate is provided with a conductor structure, the vibration element is provided in the cavity and connected to the ceramic substrate through an adhesive, and the second electrode structure is also electrically connected to the conductor structure and the thermistor. The thermistor as described in claim 1, wherein the crystal resonator is a fully crystal-packaged crystal resonator, the airtight package structure includes a first seal disposed on one side of the vibration element, a second seal disposed on the other side of the vibration element, and a second electrode structure disposed on the first seal, the first seal, the vibration element and the second seal all include a crystal material, the second electrode structure is electrically connected to the thermistor, the thermistor is disposed on the first seal and electrically connected to the second electrode structure, and the insulating layer covers the thermistor and the first seal. A thermistor as described in claim 2 or 3, wherein the second electrode structure is electrically connected to the thermistor; the second electrode structure is formed on the first sealing member by a fourth semiconductor deposition process. Thermosensitive crystal as described in claim 1, wherein the insulating layer has a heat-insulating cavity, the heat-insulating cavity includes a sealed cavity and/or a semi-closed cavity, the heat-insulating cavity contains gas or vacuum, the heat-insulating cavity includes the sealed cavity, the sealed cavity contains gas, and the gas is air; the sealed cavity is formed by etching part of the insulating layer through a third semiconductor etching process to form a semi-closed cavity, and further by covering the opening of the semi-closed cavity with another part of the insulating layer. The thermal-sensitive crystal as described in claim 1, wherein the insulating layer has a heat-insulating cavity, the heat-insulating cavity includes a sealed cavity and/or a semi-enclosed cavity, the heat-insulating cavity contains gas or vacuum, the heat-insulating cavity includes the semi-enclosed cavity, and the semi-enclosed cavity is a groove structure arranged around the first electrode structure. A method for manufacturing a thermistor crystal, comprising: providing a thermistor; providing a crystal resonator, and arranging the crystal resonator on one side of the thermistor, the crystal resonator comprising a vibration element and an airtight packaging structure arranged on the periphery of the vibration element, wherein the thermistor is arranged on a first side of the periphery of the airtight packaging structure; forming an insulating layer having a via hole on the thermistor and on the first side of the airtight packaging structure, wherein the via hole has a conductive material; and forming a first electrode structure on the insulating layer, and The first electrode structure is electrically connected to the thermistor through the conductive material in the via hole; wherein the insulating layer is deposited on the first side of the thermistor and the airtight packaging structure by a first semiconductor deposition process, the via hole is formed in the insulating layer by a first semiconductor etching process, the conductive material in the via hole is formed in the via hole by a second semiconductor deposition process, and the first electrode structure is formed on the insulating layer by the second semiconductor deposition process or a third semiconductor deposition process. The method for manufacturing a thermistor crystal as described in claim 7, wherein the crystal resonator is a ceramic packaged crystal resonator or a fully crystal packaged crystal resonator. The manufacturing method of the thermosensitive crystal as described in claim 7, wherein the insulating layer has a heat-insulating cavity, the heat-insulating cavity includes a sealed cavity and/or a semi-closed cavity, the heat-insulating cavity contains gas or vacuum, the heat-insulating cavity includes the sealed cavity, the sealed cavity contains gas, and the gas is air; the sealed cavity is formed by etching part of the insulating layer through a third semiconductor etching process to form a semi-closed cavity, and further by covering the opening of the semi-closed cavity with another part of the insulating layer; the heat-insulating cavity includes the semi-closed cavity, and the semi-closed cavity is a groove structure arranged around the first electrode structure. An electronic device, comprising a circuit board, wherein the circuit board is provided with a thermistor crystal as described in any one of claim items 1 to 6.