TWI858373B - Manufacturing method of semiconductor - Google Patents

Abstract

A manufacturing method of a semiconductor includes steps of (a) providing a semiconductor substrate having a front side and a back side, (b) adhering a back protection film on the back side, (c) cutting the semiconductor substrate to a set depth along a plurality of cutting paths from the front side to form a plurality of scribing lines and separate a plurality of dies by the scribing lines, (d) adhering a front protection film on the front side, (e) removing the back protection film, (f) grinding the semiconductor substrate from the back side until a rest thickness of the semiconductor substrate equals to the set depth to expose the plurality of dies and the plurality of scribing lines, and (g) performing an evaporation to the semiconductor substrate to attach a plurality of metal particles to the plurality of dies. As a result, the efficiency of heat-dissipation is effectively enhanced because of the distribution of the metal particles.

Description

Semiconductor manufacturing method

The present invention relates to a manufacturing method, and in particular to a semiconductor manufacturing method which can effectively promote heat dissipation effect.

In traditional semiconductor manufacturing processes, heat dissipation of power chips is usually achieved by coating metal on the back of the chip.

Specifically, the commonly used process is to first apply a film on the front side of the wafer, grind and thin the back side of the wafer, and after processes such as stress removal, cleaning, deoxidation and drying, use an evaporator to plate metal on the back side of the wafer by evaporation, then apply a film on the back side of the wafer and remove the film on the front side of the wafer, then cut and package with a metal bracket to finally make a chip. The main heat dissipation path is to use the metal coated on the bottom of the chip to promote heat dissipation of the connected metal bracket.

However, this manufacturing method of grinding the wafer before cutting is only applicable to thicker products, such as power chips with a final thickness of about 250 microns. If this traditional manufacturing method is applied to thinner products, the wafer will often warp or even break during the production process, making manufacturing difficult and adding a lot of extra costs.

Therefore, it is necessary to provide a semiconductor manufacturing method to solve the problems existing in the prior art.

The motivation of the present invention is to provide a semiconductor manufacturing method, aiming to solve and improve the problems and shortcomings of the above-mentioned prior art.

The main purpose of the present invention is to provide a semiconductor manufacturing method, by first attaching a back protective film to the back of a semiconductor substrate, cutting from the front to a set depth, and then attaching a front protective film to the front of the semiconductor substrate, and grinding the semiconductor substrate from the back of the semiconductor substrate, the back of the semiconductor substrate can be protected from the risk of breaking and fragmenting during cutting, and the semiconductor substrate can also be prevented from warping. Furthermore, by exposing the crystal grains and the cutting path and performing evaporation, the metal particles are distributed in the cutting path and attached to the surrounding of the crystal grains, which can effectively increase the heat dissipation effect.

To achieve the above-mentioned purpose, the present invention provides a semiconductor manufacturing method, including the steps of: (a) providing a semiconductor substrate having a front side and a back side; (b) attaching a back side protective film to the back side; (c) cutting the semiconductor substrate from the front side along a plurality of cutting paths to a set depth to form a plurality of cutting paths, and separating a plurality of grains by the plurality of cutting paths; (d) attaching a front side protective film to the front side; (e) removing the back side protective film; (f) grinding the semiconductor substrate from the back side until a remaining thickness of the semiconductor substrate is equal to the set depth to expose the plurality of grains and the plurality of cutting paths; and (g) evaporating the semiconductor substrate to attach a plurality of metal particles to the plurality of grains.

In one embodiment of the present invention, each of the crystal grains includes a first surface and a second surface arranged opposite to each other, and a third surface, a fourth surface, a fifth surface and a sixth surface perpendicular to the first surface and the second surface, and the plurality of metal particles are attached to the second surface, the third surface, the fourth surface, the fifth surface and the sixth surface.

In one embodiment of the present invention, the plurality of metal particles are a plurality of titanium nickel silver particles.

In one embodiment of the present invention, the set depth is between 37.5 microns and 150 microns.

In one embodiment of the present invention, the width of each of the scribe lines is 40 micrometers, and the particle size of each of the metal particles is 1 micrometer.

In one embodiment of the present invention, the thickness of the back protective film is 90 microns, and in the step (c), the thickness of the semiconductor substrate is 300 microns.

In one embodiment of the present invention, the set depth is 70 microns, the step (c) is implemented with a blade of a wafer saw, and a blade height parameter of the blade is 320 microns.

In one embodiment of the present invention, between step (f) and step (g), the following steps are further included: (f1) removing residual stress of the semiconductor substrate; (f2) cleaning the semiconductor substrate; (f3) removing an oxide layer of the semiconductor substrate; and (f4) drying the semiconductor substrate.

In one embodiment of the present invention, after step (g), the method further includes the steps of: (h) attaching a second back protective film to the back surface; (i) removing the front protective film; and (j) packaging the semiconductor substrate.

In one embodiment of the present invention, in the step (j), the plurality of dies are packaged to form a plurality of power chips.

In order to make the above and other purposes, features, and advantages of the present invention more clearly understood, the preferred embodiments of the present invention are specifically cited below, and are described in detail with reference to the attached drawings. Furthermore, the directional terms mentioned in the present invention, such as up, down, top, bottom, front, back, left, right, inside, outside, side, periphery, center, horizontal, transverse, vertical, longitudinal, axial, radial, topmost or bottommost, etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to explain and understand the present invention, but not to limit the present invention.

Please refer to Figures 1 to 4, wherein Figure 1 shows a flow chart of a semiconductor manufacturing method of an embodiment of the present invention, Figure 2 shows a semiconductor substrate, a back side protective film and a schematic diagram of cutting a semiconductor substrate of a semiconductor manufacturing method of an embodiment of the present invention, Figure 3 shows cutting of a semiconductor substrate with a back side protective film attached thereto in a semiconductor manufacturing method of an embodiment of the present invention and a stereoscopic diagram of cutting paths and grains, and Figure 4 shows a schematic diagram of a semiconductor substrate, cutting paths, grains and a back side protective film of a semiconductor manufacturing method of an embodiment of the present invention.

As shown in FIGS. 1 to 4 , according to an embodiment of the present invention, a semiconductor manufacturing method includes the following steps: First, as shown in step S10, a semiconductor substrate 1 having a front surface 11 and a back surface 12 is provided. Next, as shown in step S20, a back surface protective film 2 is attached to the back surface 12 of the semiconductor substrate 1. Then, as shown in step S30, the semiconductor substrate 11 is cut along a plurality of cutting paths from the front surface 11 of the semiconductor substrate 1 to a set depth d to form a plurality of cutting paths 13, and a plurality of die 14 are separated by the plurality of cutting paths 13.

Next, please refer to Figures 1, 5 and 6, wherein Figure 5 shows a schematic diagram of a front protective film, a semiconductor substrate and grinding a semiconductor substrate from the back side of a semiconductor manufacturing method of an embodiment of the present case, and Figure 6 shows a schematic diagram of a front protective film, a semiconductor substrate having a remaining thickness equal to a set depth and evaporating the semiconductor substrate from the back side of a semiconductor manufacturing method of an embodiment of the present case.

As shown in FIG. 1 , FIG. 5 and FIG. 6 , in the semiconductor manufacturing method of the present case, in step S40, a front protective film 3 is attached to the front surface 11 of the semiconductor substrate 1. Then, as shown in step S50, the back protective film 2 is removed. Then, in step S60, the semiconductor substrate 1 is polished from the back surface 12 of the semiconductor substrate 1 until the remaining thickness t of the semiconductor substrate 1 is equal to the set depth d, so as to expose a plurality of crystal grains 14 and a plurality of sawing streets 13. Then, as shown in step S70, the semiconductor substrate 1 is evaporated so that a plurality of metal particles are attached to the plurality of crystal grains 14.

Please refer to Figures 1 to 6 again. Compared with the prior art, the semiconductor manufacturing method of the present invention can protect the back side 12 of the semiconductor substrate 1 from the risk of breaking and fragmenting during cutting by first attaching a back side protective film 2 to the back side 12 of the semiconductor substrate 1 and cutting from the front side 11 to a set depth d, and then attaching a front side protective film 3 to the front side 11 of the semiconductor substrate 1 and grinding the semiconductor substrate 1 from the back side 12. At the same time, it can also prevent the semiconductor substrate 1 from warping. Furthermore, by exposing the crystal grain 14 and the cutting path 13 and performing evaporation, the metal particles are distributed in the cutting path 13 and attached to the surrounding of the crystal grain 14, which can effectively increase the heat dissipation effect.

More specifically, please refer to FIG. 7 and FIG. 8, wherein FIG. 7 shows a three-dimensional diagram of a crystal grain and its metal particle distribution after evaporation by a semiconductor manufacturing method of an embodiment of the present invention, and FIG. 8 shows an inverted three-dimensional diagram of the crystal grain and its metal particle distribution shown in FIG. 7 and FIG. 8 show that each crystal grain 14 after evaporation by the semiconductor manufacturing method of the present invention includes a first surface 141 and a second surface 142 disposed opposite to each other, and a third surface 143, a fourth surface 144, a fifth surface 145 and a sixth surface 146 perpendicular to the first surface 141 and the second surface 142, and a plurality of metal particles (indicated by a diagonal line bottom in FIG. 7 and FIG. 8) are attached to the second surface 142, the third surface 143, the fourth surface 144, the fifth surface 145 and the sixth surface 146. The plurality of metal particles may be a plurality of titanium nickel silver particles, but is not limited thereto.

That is, in the semiconductor manufacturing method of the present case, the semiconductor substrate 11 is first cut to a set depth d in step S30, and then the semiconductor substrate is ground from the back side until the remaining thickness t is equal to the set depth d in step S60, that is, the semiconductor substrate is ground from the back side until the cut portion is worn through, exposing all the cutting paths 13 and the die 14. During the subsequent evaporation, since the cutting paths 13 are open to the evaporated metal particles, the metal particles will not only adhere to the second surface 142 of the die 14 (i.e., the side close to the back side 12 of the semiconductor substrate 1), but also to the third surface 143, the fourth surface 144, the fifth surface 145 and the sixth surface 146 of the die 14. Since the front protection film 3 is attached to the first surface 141 of the die 14, the metal particles will not adhere to the first surface 141 of the die 14.

Compared to the prior art that only coats the back of the semiconductor substrate or the back of the crystal grain with metal particles, the semiconductor manufacturing method of this case uses evaporation to attach metal particles to the bottom and four sides of the crystal grain, which greatly increases the surface area of the metal particle distribution compared to the prior art, thereby significantly improving the heat dissipation effect.

Please refer to Figures 9 to 11, wherein Figure 9 shows a schematic diagram of a front protective film, a semiconductor substrate, and a second back protective film of a semiconductor manufacturing method of an embodiment of the present invention, Figure 10 shows a schematic diagram of a semiconductor substrate and a second back protective film of a semiconductor manufacturing method of an embodiment of the present invention, and Figure 11 shows a detailed flow chart of a semiconductor manufacturing method of an embodiment of the present invention. As shown in Figures 9 to 11, according to a semiconductor manufacturing method of an embodiment of the present invention, after step S70, the following steps are further included: First, as shown in step S80, the second back protective film 4 is attached to the back surface 12. Then, as shown in step S90, the front protective film 3 is removed. Then, as shown in step S100, the semiconductor substrate 1 is packaged. In some embodiments, in step S100 , a plurality of dies 14 may be packaged to form a plurality of power chips, but the present invention is not limited thereto.

In addition, between step S60 and step S70 of the semiconductor manufacturing method of the present case, step S62, step S64, step S66 and step S68 may be further included. After step S60 is completed, the residual stress of the semiconductor substrate 1 is removed in step S62, for example, by using a mixed acid solution. Then, the semiconductor substrate 1 is cleaned in step S64, for example, by using deionized water. Then, the oxide layer of the semiconductor substrate 1 is removed in step S66, for example, by using hydrofluoric acid. Then, as shown in step S68, the semiconductor substrate 1 is dried to make the semiconductor substrate 1 suitable for the subsequent evaporation process, i.e., step S70.

Please refer to Figure 1 and Figure 11. In some embodiments, the steps S20, S40 and S80 of the semiconductor manufacturing method of the present invention are preferably implemented by a film laminating machine, the step S30 is preferably implemented by a blade of a wafer cutting machine, the step S50 and S90 are preferably implemented by a film peeling machine, the step S60 is preferably implemented by a grinder, the step S70 is preferably implemented by a vapor deposition machine, and the step S100 is preferably implemented by a packaging test machine, but it is not limited thereto.

Please refer to Figures 2 to 6 again. According to a number of specific embodiments, the set depth d and the remaining thickness t used in the semiconductor manufacturing method of the present case can be between 37.5 micrometers (µm) and 150 micrometers, that is, between 1.5 mil and 6 mil, preferably between 50 micrometers and 100 micrometers, that is, between 2 mil and 4 mil, and can be specifically 50 micrometers, 60 micrometers, 70 micrometers or 80 micrometers, etc. It should be particularly noted that the actual values of the set depth d and the remaining thickness t can be set according to the actual needs of the product and are not limited to the examples cited here.

In the embodiments shown in FIGS. 2 to 10 , the depth d and the remaining thickness t are set to 70 microns, the width of each cutting path 13 is about 40 microns, and the particle size of each metal particle is about 1 micron. When the semiconductor substrate 1 has completed the front-end process and has a thickness of 300 microns, and the thickness of the selected back protective film 2 is 90 microns, that is, the total thickness of the semiconductor substrate 1 and the back protective film 2 is 390 microns, the blade height parameter of the blade of the wafer cutting machine selected in the semiconductor manufacturing method of this case is set to 320 microns, and the depth d (i.e., the desired cutting depth) can be set to 70 microns. When the remaining thickness t of the semiconductor substrate 1 is polished to 70 microns, a plurality of cutting paths 13 and a plurality of crystal grains 14 are exposed. Since the width of the cutting street 13 is about 40 microns, metal particles with a particle size of only about 1 micron can easily penetrate into the cutting street 13 and evenly adhere to the four sides of the die 14. Therefore, the bottom surface and four sides of each die 14 are evenly distributed with metal particles, which is helpful for heat dissipation.

Please refer to Figures 12 to 14 in conjunction with Figure 1, wherein Figure 12 shows a schematic diagram of a semiconductor substrate, a back side protective film and cutting of a semiconductor substrate in a semiconductor manufacturing method in another embodiment of the present invention, Figure 13 shows a semiconductor substrate with a back side protective film attached thereto in a semiconductor manufacturing method in another embodiment of the present invention and a three-dimensional diagram of the cutting paths and grains, and Figure 14 shows a schematic diagram of a semiconductor substrate, a cutting path, a grain and a back side protective film in a semiconductor manufacturing method in another embodiment of the present invention.

As shown in FIG. 1 and FIG. 12 to FIG. 14 , according to another embodiment of the present invention, the semiconductor manufacturing method includes the following steps: First, as shown in step S10, a semiconductor substrate 5 having a front surface 51 and a back surface 52 is provided. Next, as shown in step S20, a back surface protective film 6 is attached to the back surface 52 of the semiconductor substrate 5. Then, as shown in step S30, the semiconductor substrate 51 is cut along a plurality of cutting paths from the front surface 51 of the semiconductor substrate 5 to a set depth d2 to form a plurality of cutting paths 53, and a plurality of crystal grains 54 are separated by the plurality of cutting paths 53.

Next, please refer to FIG. 1, FIG. 15 and FIG. 16, wherein FIG. 15 shows a schematic diagram of a front protective film, a semiconductor substrate and grinding a semiconductor substrate from the back of another embodiment of the semiconductor manufacturing method of the present case, and FIG. 16 shows a schematic diagram of a front protective film, a semiconductor substrate with a remaining thickness equal to a set depth and evaporation of a semiconductor substrate from the back of another embodiment of the semiconductor manufacturing method of the present case. In step S40, the semiconductor manufacturing method of the present case attaches the front protective film 7 to the front surface 51 of the semiconductor substrate 5. Then, as shown in step S50, the back protective film 6 is removed. Next, in step S60, the semiconductor substrate 5 is ground from the back side 52 of the semiconductor substrate 5 until the remaining thickness t2 of the semiconductor substrate 5 is equal to the set depth d2, so as to expose the plurality of crystal grains 54 and the plurality of saw streets 53. Then, as shown in step S70, the semiconductor substrate 5 is evaporated so that the plurality of metal particles are attached to the plurality of crystal grains 15.

Please refer to FIG. 17 and FIG. 18, wherein FIG. 17 shows a three-dimensional diagram of a crystal grain and its metal particle distribution after evaporation by a semiconductor manufacturing method according to another embodiment of the present invention, and FIG. 18 shows an inverted three-dimensional diagram of the crystal grain and its metal particle distribution shown in FIG. 17. As shown in FIG. 17 and FIG. 18, each crystal grain 54 after evaporation by the semiconductor manufacturing method of the present invention includes a first surface 541 and a second surface 542 arranged opposite to each other, and a third surface 543, a fourth surface 544, a fifth surface 545 and a sixth surface 546 perpendicular to the first surface 541 and the second surface 542, and a plurality of metal particles (indicated by a diagonal line bottom in FIG. 17 and FIG. 18) are attached to the second surface 542, the third surface 543, the fourth surface 544, the fifth surface 545 and the sixth surface 546. The plurality of metal particles may be a plurality of titanium nickel silver particles, but is not limited thereto.

That is, in the semiconductor manufacturing method of the present case, the semiconductor substrate 11 is first cut to a set depth d in step S30, and then the semiconductor substrate is ground from the back side until the remaining thickness t is equal to the set depth d in step S60, that is, the semiconductor substrate is ground from the back side until the cut portion is worn through, exposing all the cutting paths 13 and the die 14. During the subsequent evaporation, since the cutting paths 13 are open to the evaporated metal particles, the metal particles will not only adhere to the second surface 142 of the die 14 (i.e., the side close to the back side 12 of the semiconductor substrate 1), but also to the third surface 143, the fourth surface 144, the fifth surface 145 and the sixth surface 146 of the die 14. Since the front protection film 3 is attached to the first surface 141 of the die 14, the metal particles will not adhere to the first surface 141 of the die 14.

Please refer to FIG. 11, FIG. 19 and FIG. 20, wherein FIG. 19 shows a schematic diagram of a front protective film, a semiconductor substrate and a second back protective film of a semiconductor manufacturing method of another embodiment of the present invention, and FIG. 20 shows a schematic diagram of a semiconductor substrate and a second back protective film of a semiconductor manufacturing method of another embodiment of the present invention. As shown in FIG. 11, FIG. 19 and FIG. 20, the semiconductor manufacturing method of the present invention further includes the following steps after step S70: First, as shown in step S80, a second back protective film 8 is attached to the back surface 52. Then, as shown in step S90, the front protective film 7 is removed. Then, as shown in step S100, the semiconductor substrate 5 is packaged. In some embodiments, in this step S100, a plurality of dies 54 can be packaged to form a plurality of power chips, but it is not limited thereto.

In the embodiments shown in FIG. 12 to FIG. 20, the depth d2 and the remaining thickness t2 are set to 50 microns, and the width of each cutting path 13 is about 40 microns, and the particle size of each metal particle is about 1 micron. Among them, when the semiconductor substrate 5 has completed the front-end process and the thickness is 300 microns, and the thickness of the selected back protective film 2 is 90 microns, that is, the total thickness of the semiconductor substrate 5 and the back protective film 6 is 390 microns, the blade height parameter of the blade of the wafer cutting machine selected in the semiconductor manufacturing method of this case is set to 340 microns, which can achieve the setting depth d2 (that is, the desired cutting depth) equal to 50 microns. When the remaining thickness t2 of the semiconductor substrate 5 is polished to 50 microns, a plurality of cutting paths 53 and a plurality of grains 54 are exposed. Since the width of the cutting street 53 is about 40 microns, metal particles with a particle size of only about 1 micron can easily penetrate into the cutting street 53 and evenly adhere to the four sides of the grain 54. Therefore, the bottom surface and four sides of each grain 54 are evenly distributed with metal particles, which helps to dissipate heat.

In summary, the present invention provides a semiconductor manufacturing method, by first attaching a back protective film to the back of a semiconductor substrate, and cutting from the front to a set depth, and then attaching a front protective film to the front of the semiconductor substrate, and grinding the semiconductor substrate from the back of the semiconductor substrate, the back of the semiconductor substrate can be protected from the risk of breaking and fragmenting during cutting, and the semiconductor substrate can also be prevented from warping. Furthermore, by exposing the crystal grains and the cutting paths and performing evaporation, the metal particles are distributed deep into the cutting paths and attached to the surroundings of the crystal grains, which can effectively increase the heat dissipation effect.

Although the present invention has been disclosed with preferred embodiments, they are not intended to limit the present invention. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined in the attached patent application.

1: semiconductor substrate 11: front 12: back 13: cutting path 14: crystal grain 141: first surface 142: second surface 143: third surface 144: fourth surface 145: fifth surface 146: sixth surface 2: back protective film 3: front protective film 4: second back protective film 5: semiconductor substrate 51: front 52: back 53: cutting path 54: crystal grain 541: first surface 542: second surface 543: third surface 544: fourth surface 545: fifth surface 546: sixth surface 6: back protective film 7: front protective film 8: second back protective film d: set depth d2: set depth t: remaining thickness t2: Remaining thickness S10: Step S20: Step S30: Step S40: Step S50: Step S60: Step S62: Step S64: Step S66: Step S68: Step S70: Step S80: Step S90: Step S100: Step

FIG1 shows a flow chart of a semiconductor manufacturing method according to an embodiment of the present invention. FIG2 shows a schematic diagram of a semiconductor substrate, a back protective film, and a semiconductor substrate cut in a semiconductor manufacturing method according to an embodiment of the present invention. FIG3 shows a semiconductor substrate with a back protective film attached thereto in a semiconductor manufacturing method according to an embodiment of the present invention, and a three-dimensional diagram of the cutting path and the die. FIG4 shows a schematic diagram of a semiconductor substrate, a cutting path, a die, and a back protective film in a semiconductor manufacturing method according to an embodiment of the present invention. FIG5 shows a schematic diagram of a front protective film, a semiconductor substrate, and a semiconductor substrate ground from the back in a semiconductor manufacturing method according to an embodiment of the present invention. FIG6 shows a schematic diagram of a front protective film, a semiconductor substrate, and a semiconductor substrate having a residual thickness equal to a set depth and a semiconductor substrate being evaporated from the back in a semiconductor manufacturing method according to an embodiment of the present invention. FIG7 shows a three-dimensional image of a crystal grain and its metal particle distribution after evaporation by a semiconductor manufacturing method of an embodiment of the present case. FIG8 shows an inverted three-dimensional image of the crystal grain and its metal particle distribution shown in FIG7. FIG9 shows a schematic diagram of a front protective film, a semiconductor substrate, and a second back protective film of a semiconductor manufacturing method of an embodiment of the present case. FIG10 shows a schematic diagram of a semiconductor substrate and a second back protective film of a semiconductor manufacturing method of an embodiment of the present case. FIG11 shows a detailed flow chart of a semiconductor manufacturing method of an embodiment of the present case. FIG12 shows a schematic diagram of a semiconductor substrate, a back protective film, and a cut semiconductor substrate of a semiconductor manufacturing method of another embodiment of the present case. FIG. 13 shows a three-dimensional diagram of cutting a semiconductor substrate with a back protective film attached in a semiconductor manufacturing method according to another embodiment of the present invention, and the cutting path and the grain. FIG. 14 shows a schematic diagram of a semiconductor substrate, a cutting path, a grain and a back protective film according to another embodiment of the present invention. FIG. 15 shows a schematic diagram of a front protective film, a semiconductor substrate and a semiconductor substrate ground from the back according to another embodiment of the present invention. FIG. 16 shows a schematic diagram of a front protective film, a semiconductor substrate having a residual thickness equal to a set depth and evaporating a semiconductor substrate from the back according to another embodiment of the present invention. FIG. 17 shows a three-dimensional diagram of a grain and its metal particle distribution after evaporation according to a semiconductor manufacturing method according to another embodiment of the present invention. FIG. 18 shows a three-dimensional diagram of the inverted crystal grains and their metal particle distribution shown in FIG. 17. FIG. 19 shows a schematic diagram of a front protective film, a semiconductor substrate, and a second back protective film in a semiconductor manufacturing method according to another embodiment of the present invention. FIG. 20 shows a schematic diagram of a semiconductor substrate and a second back protective film in a semiconductor manufacturing method according to another embodiment of the present invention.

S10: Step

S20: Step

S30: Step

S40: Step

S50: Step

S60: Step

S70: Step

Claims (10)

A semiconductor manufacturing method includes the following steps: (a) providing a semiconductor substrate having a front surface and a back surface; (b) attaching a back surface protective film to the back surface; (c) cutting the semiconductor substrate from the front surface along a plurality of cutting paths to a set depth to form a plurality of cutting paths, and separating a plurality of crystal grains by the plurality of cutting paths; (d) attaching a front surface protective film to the front surface; (e) removing the back surface protective film; (f) grinding the semiconductor substrate from the back surface until a remaining thickness of the semiconductor substrate is equal to the set depth to expose the plurality of crystal grains and the plurality of cutting paths; and (g) evaporating the semiconductor substrate to attach a plurality of metal particles to the plurality of crystal grains, wherein the particle size of each of the metal particles is smaller than the width of each of the cutting paths. A semiconductor manufacturing method as described in claim 1, wherein each of the crystal grains includes a first surface and a second surface disposed opposite to each other, and a third surface, a fourth surface, a fifth surface, and a sixth surface perpendicular to the first surface and the second surface, and the plurality of metal particles are attached to the second surface, the third surface, the fourth surface, the fifth surface, and the sixth surface. A semiconductor manufacturing method as described in claim 1, wherein the plurality of metal particles are a plurality of titanium nickel silver particles. A semiconductor manufacturing method as described in claim 1, wherein the setting depth is between 37.5 microns and 150 microns. A semiconductor manufacturing method as described in claim 1, wherein the width of each of the cutting paths is 40 microns and the particle size of each of the metal particles is 1 micron. The semiconductor manufacturing method as described in claim 1, wherein the thickness of the back protective film is 90 microns, and in the step (c), the thickness of the semiconductor substrate is 300 microns. A semiconductor manufacturing method as described in claim 6, wherein the set depth is 70 microns, the step (c) is implemented with a blade of a wafer cutting machine, and a blade height parameter of the blade is 320 microns. The semiconductor manufacturing method as described in claim 1, wherein between step (f) and step (g), the method further includes the steps of: (f1) removing residual stress of the semiconductor substrate; (f2) cleaning the semiconductor substrate; (f3) removing an oxide layer of the semiconductor substrate; and (f4) drying the semiconductor substrate. The semiconductor manufacturing method as described in claim 1, wherein after step (g), further comprising the steps of: (h) attaching a second back protective film to the back surface; (i) removing the front protective film; and (j) packaging the semiconductor substrate. A semiconductor manufacturing method as described in claim 9, wherein in the step (j), the plurality of dies are packaged to form a plurality of power chips.

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