TWI855803B - Wafer or die fixing method with wave shaped bond wave - Google Patents

Abstract

A wafer or die fixing method with wave shaped bond wave includes the following steps: configuring first through holes, second through holes, third through holes, first penetrating holes, and second penetrating holes on a fixing device; sucking a first side, a third side and a forth side of a wafer or a die by a first negative pressure, a second negative pressure and a third negative pressure of the fixing device respectively; moving the wafer or die above a substrate by the fixing device; blowing the first side of the wafer or die by a first positive pressure of the fixing device and the first side of the wafer or die is bended to contact the substrate and a bond wave is formed; and closing the first negative pressure, the second negative pressure and the third negative pressure in sequence from a first side of the fixing device to a second side of the fixing device, while providing second positive pressures in sequence from the first side of the fixing device to the second side of the fixing device.

Description

Die bonding method using wave-shaped bonding waves

The present invention relates to a die bonding method, in particular a die bonding method using a wave-shaped bonding wave.

The conventional die bonding device has an air hole or a push pin at its center. Positive pressure blows through the air hole toward the center of the wafer or die and acts on the center of the wafer or die, or the push pin moves toward the center of the wafer or die and acts on the center of the wafer or die, so that the center of the wafer or die bends and deforms to contact the center of the substrate, and forms a bonding wave. The bonding wave can gradually expand from the center of the wafer or die to the periphery of the wafer or die, so that the wafer or die gradually detaches from the die bonding device and bonds to the substrate.

However, when the bonding wave expands to the end of the wafer or die, the negative pressure at the end of the die bonding device can easily affect the expansion of the bonding wave, resulting in uneven diffusion of the bonding wave, and even forming bubbles between the end of the wafer or die and the end of the substrate, thereby causing the wafer or die to not be completely and tightly bonded to the substrate. Therefore, the subsequent processing procedures of the wafer or die are easily affected by bubbles, reducing the yield of the products made by subsequent processing.

Furthermore, before the bonding wave expands to the end of the wafer or die, the pores at the end of the die bonding device are more dispersed, so that the negative pressure at the end of the die bonding device is weak, and it is easy to fail to absorb the end of the wafer or die, thereby causing the bonding wave to be destroyed and the wafer or die to fall down, and the wafer or die will collide with the substrate and be damaged.

The above problems are particularly obvious when the size of the wafer or die is less than 12 inches.

The main purpose of the present invention is to provide a die bonding method using a wave-shaped bonding wave, which can form a wave-shaped bonding wave by configuring the positions of through holes and perforations and the switching timing of positive and negative pressures.

Another purpose of the present invention is to provide a die bonding method using a wave-shaped bonding wave, where the end of the die bonding device can provide a strong negative pressure perpendicular to the bonding wave to stably absorb the end of the wafer or die.

In order to achieve the above-mentioned purpose, the present invention provides a die bonding method using a wave-shaped bonding wave, comprising the following steps: (a) defining an axis passing through a first side, a center and a second side of a die bonding device as a first axis, and defining an axis passing through a third side, the center and a fourth side of the die bonding device as a second axis; disposing a plurality of first through holes between the first side and the second axis of the die bonding device, and the first through holes are arranged along a first direction, wherein the first direction is parallel to the second axis; disposing a plurality of second through holes between the third side of the die bonding device and the first axis and close to the third side of the die bonding device, and the second through holes are arranged along a first direction; (a) the first through holes provide a first negative pressure, and the die bonding device absorbs a first side of a wafer or a die by the first negative pressure; (b) the first through holes provide a second negative pressure, and the die bonding device absorbs a first side of a wafer or a die by the second negative pressure; (c) the first through holes provide a second negative pressure, and the die bonding device absorbs a first side of a wafer or a die by the second negative pressure; (d) the first through holes provide a first negative pressure, and the die bonding device absorbs a first side of a wafer or a die by the second negative pressure; (e) the first through holes provide a second negative pressure, and the die bonding device absorbs a first side of a wafer or a die by the second negative pressure; (f) the first through holes provide a second negative pressure, and the die bonding device absorbs a first side of a wafer or a die by the second negative pressure. (c) the die bonding device moves the wafer or the die to a substrate; (d) the first through holes provide a first positive pressure, and the die bonding device blows the first side of the wafer or the die and acts on the first side of the wafer or the die by the first positive pressure, so that the first side of the wafer or the die is bent and deformed to contact the substrate and form a bonding wave; and (e) the first through holes, the second through holes and the third through holes are connected from the first side of the die bonding device to the second side of the die bonding device. The first negative pressure, the second negative pressure and the third negative pressure are sequentially closed in the direction, and the second through holes sequentially provide a second positive pressure from the first side of the die bonding device to the second side of the die bonding device; and the die bonding device sequentially blows the first side, a center and a second side of the wafer or the die along the first axis by the second positive pressure. The first side, the center and the second side of the wafer or the die are sequentially acted on, so that a contact line of the bonding wave gradually expands from the first side of the wafer or the die toward the second side of the wafer or the die, the degree of bending and deformation of the wafer or the die gradually increases, and a contact area between the wafer or the die and the substrate gradually increases.

In some embodiments, step (a) further includes: the first through holes are arranged in at least one row along the first direction.

In some embodiments, step (a) further includes: at least one of the first through holes is arranged between the third side of the die-bonding device and the first axis, and the remaining first through holes are arranged between the fourth side of the die-bonding device and the first axis.

In some embodiments, step (a) further includes: the second through holes are arranged in at least one row along the second direction in an arc shape, the third through holes are arranged in at least one row along the second direction in an arc shape, and the second through holes and the third through holes are arranged on a circumference of at least one concentric circle.

In some embodiments, step (a) further includes: the first perforations are arranged in at least one row along the first direction.

In some embodiments, step (a) further includes: disposing a plurality of grooves between the second side of the die bonding device and the second axis and close to the second side of the die bonding device; and disposing a plurality of fourth through holes in the grooves; wherein step (b) further includes: the fourth through holes provide a fourth negative pressure, and the die bonding device absorbs the second side of the wafer or the die through the grooves by the fourth negative pressure. ; wherein, after step (e), the method further comprises: (f) the fourth through holes sequentially close the fourth negative pressure from the center of the die bonding device toward the second side of the die bonding device, so that the contact line of the bonding wave can sequentially cross the grooves in a direction parallel to the second axis, and the second side of the wafer or die gradually separates from the second side of the die bonding device until the wafer or the die is completely bonded to the substrate.

In some embodiments, step (a) further includes: the grooves extend straight along the second direction.

In some embodiments, step (d) further includes: the pressure of the first positive pressure gradually increases, so that the contact line of the bonding wave crosses the first through-holes, the degree of bending and deformation of the wafer or the die gradually increases, and the contact area between the wafer or the die and the substrate gradually increases.

In some embodiments, step (e) further includes: the pressure of the second positive pressure is equal to the pressure after the first positive pressure increases.

In some embodiments, step (e) further includes: the first through holes synchronously close the first negative pressure, and at the same time one of the second through holes provides the second positive pressure, so that the contact line of the bonding wave crosses the first through holes and one of the second through holes, the degree of bending and deformation of the wafer or the die gradually increases, and the contact area between the wafer or the die and the substrate gradually increases; and the second through holes are sequentially closed from the first side of the die bonding device to the second side of the die bonding device. The second negative pressure is applied to the third through holes in sequence from the first side of the die bonding device to the second side of the die bonding device, and the remaining second through holes in sequence provide the second positive pressure from the first side of the die bonding device to the second side of the die bonding device, so that the contact line of the bonding wave sequentially crosses the second through holes, the third through holes and the remaining second through holes, the degree of bending and deformation of the wafer or the die gradually increases, and the contact area between the wafer or the die and the substrate gradually increases.

The effect of the present invention is that the die bonding method of the present invention can form a wavy bonding wave by configuring the positions of the through holes and the perforations and the switching timing of the positive and negative pressures. Thereby, the control area of the die bonding device is increased, and the wavy bonding wave can be evenly diffused, so that the wafer or die can slowly detach from the die bonding device and be tightly bonded to the substrate without generating any bubbles.

Furthermore, before the bonding wave expands to the second side of the wafer or die, the bonding method of the present invention can extend the fourth negative pressure from the third side of the die bonding device to the fourth side through the grooves, providing a stronger fourth negative pressure perpendicular to the bonding wave to stably absorb the second side of the wafer or die, thereby preventing the bonding wave from being destroyed and preventing the wafer or die from falling down, and the wafer or die will not collide with the substrate and be damaged.

10: Die bonding device

11: First side

12: Second side

13: Third side

14: Fourth side

15: Center

16: First axis

17: Second axis

21~24: First through hole

31~35: Second through hole

41~45: The third through hole

51~53: Groove

60: Fourth through hole

71~73: First perforation

81~85: Second piercing

91: First negative pressure

92: Second negative pressure

93: The third negative pressure

94: Fourth negative pressure

95: First positive pressure

96: Second positive pressure

100: Wafer

200: Substrate

300: Fitting wave

310: Contact line

D1: First direction

D2: Second direction

S10~S60: Steps

Figure 1 is a flow chart of the method of the present invention.

Figure 2 is a bottom view of step S10 of the method of the present invention.

FIG3A is a side view of step S20 of the method of the present invention.

FIG3B is a bottom view of step S20 of the method of the present invention.

FIG4 is a side view of step S30 of the method of the present invention.

FIG5A is a side view of step S40 of the method of the present invention.

Figures 5B to 5D are bottom views of step S40 of the method of the present invention.

Figures 6A to 6J are bottom views of step S50 of the method of the present invention.

Figures 7A to 7D are bottom views of step S60 of the method of the present invention.

The following is a more detailed description of the implementation of the present invention with the help of diagrams and component symbols, so that those who are familiar with the technology can implement it accordingly after reading this manual.

FIG1 is a flow chart of the method of the present invention. FIG2 is a bottom view of step S10 of the method of the present invention. FIG3A is a side view of step S20 of the method of the present invention. FIG3B is a bottom view of step S20 of the method of the present invention. FIG4 is a side view of step S30 of the method of the present invention. FIG5B to FIG5D are bottom views of step S40 of the method of the present invention. FIG6A to FIG6J are bottom views of step S50 of the method of the present invention. FIG7A to FIG7D are bottom views of step S60 of the method of the present invention. The present invention provides a die bonding method using a wave-shaped bonding wave, comprising the following steps:

In step S10, as shown in FIG. 1 and FIG. 2, an axis passing through a first side 11, a center 15, and a second side 12 of a die bonding device 10 is defined as a first axis 16, and an axis passing through a third side 13, a center 15, and a fourth side 14 of the die bonding device 10 is defined as a second axis 17; a plurality of first through holes 21-24 are disposed between the first side 11 of the die bonding device 10 and the second axis 17, and the first through holes 21-24 are arranged in a row along a first direction D1 straight line, wherein, The first direction D1 is parallel to the second axis 17, wherein the first through holes 21, 22 are arranged between the third side 13 of the die bonding device 10 and the first axis 16, and the first through holes 23, 24 are arranged between the fourth side 14 of the die bonding device 10 and the first axis 16; a plurality of second through holes 31-35 are arranged between the third side 13 of the die bonding device 10 and the first axis 16 and close to the third side 13 of the die bonding device 10, and the second through holes 31-35 are arranged in an arc shape along a second direction D2 to form a plurality of second through holes 31-35. The die bonding device 10 is provided with a plurality of third through holes 41-45 arranged between the fourth side 14 of the die bonding device 10 and the first axis 16 and close to the fourth side 14 of the die bonding device 10, and the third through holes 41-45 are arranged in an arc shape in a row along the second direction D2, and the second through holes 31-35 and the third through holes 41-45 are arranged on a circumference of a concentric circle; the plurality of grooves 51-53 are arranged between the second side 12 of the die bonding device 10 and the second axis 17 1 and close to the second side 12 of the die bonding device 10, and the grooves 51-53 extend in a straight line along the second direction D2; a plurality of fourth through holes 60 are arranged in the grooves 51-53; a plurality of first through holes 71-73 are arranged between the first side 11 of the die bonding device 10 and the first through holes 21-24, and the first through holes 71-73 are arranged in a row in a straight line along the first direction D1; and a plurality of second through holes 81-85 are arranged on the die bonding device 10 along the first axis 16.

In step S20, as shown in FIG. 1, FIG. 3A and FIG. 3B, the first through holes 21-24 provide a first negative pressure 91, and the die bonding device 10 absorbs a first side of the wafer 100 by the first negative pressure 91; the second through holes 31-35 provide a second negative pressure 92, and the die bonding device 10 absorbs a third side of the wafer 100 by the second negative pressure 92; the third through holes 41-45 provide a third negative pressure 93, and the die bonding device 10 absorbs a fourth side of the wafer 100 by the third negative pressure 93; and the fourth through holes 60 provide a fourth negative pressure 94, and the die bonding device 10 absorbs the second side of the wafer 100 through the grooves 51-53 by the fourth negative pressure 94.

In step S30, as shown in FIG. 1 and FIG. 4 , the die bonding device 10 moves the wafer 100 to a substrate 200 .

In step S40, as shown in FIG. 1, FIG. 5A and FIG. 5B, the first through holes 71-73 provide a first positive pressure 95, and the die bonding device 10 blows the first side of the wafer 100 with the first positive pressure 95 and acts on the first side of the wafer 100, so that the first side of the wafer 100 is bent and deformed to contact the substrate 200, and a bonding wave 300 is formed; and as shown in FIG. 5B As shown in FIG. 5C and FIG. 5D , the pressure of the first positive pressure 95 gradually increases (the thickness of the dotted line in the figure increases to represent the pressure increase), so that a contact line 310 of the bonding wave 300 crosses the first through holes 71-73, the degree of bending and deformation of the wafer 100 gradually increases (not shown), and a contact area between the wafer 100 and the substrate 200 gradually increases (not shown).

In step S50, as shown in FIG. 1 and FIG. 6A, the first through holes 21-24 simultaneously close the first negative pressure 91, and the second through hole 81 provides a second positive pressure 96, the pressure of the second positive pressure 96 is equal to the pressure after the first positive pressure 95 is increased (see the thickness of the dotted line in FIG. 6A), so that the contact line 310 of the bonding wave 300 crosses the first through holes 21-24 and the second through hole 81, and the deflection of the wafer 100 is reduced. The degree of deformation gradually increases (not shown), and the contact area between the wafer 100 and the substrate 200 gradually increases (not shown); and as shown in FIG. 1 and FIG. 6A to FIG. 6J, the second through holes 31 to 35 are sequentially closed from the first side 11 of the die bonding device 10 to the second side 12 of the die bonding device 10. The second negative pressure 92 is sequentially closed, and the third through holes 41 to 45 are sequentially closed from the first side 11 of the die bonding device 10 to the second side 12 of the die bonding device 10. The third negative pressure 93 is closed in sequence in the direction of the second side 12 of the die bonding device 10, and at the same time, the remaining second through holes 82-85 provide a second positive pressure 96 in sequence from the first side 11 of the die bonding device 10 to the second side 12 of the die bonding device 10; and the die bonding device 10 sequentially blows the first side, a center and a second side of the wafer 100 along the first axis 16 by the second positive pressure 96 and acts on the first side, the center and the second side of the wafer 100 in sequence. and the second side, so that the contact line 310 of the bonding wave 300 gradually expands from the first side of the wafer 100 to the second side of the wafer 100 and sequentially crosses the second through holes 31-35, the third through holes 41-45 and the remaining second through holes 82-85, the degree of bending deformation of the wafer 100 gradually increases (not shown), and the contact area between the wafer 100 and the substrate 200 gradually increases (not shown).

In step S60, as shown in FIG. 1 and FIG. 7A to FIG. 7D, the fourth through holes 60 sequentially close the fourth negative voltage 94 from the center of the die bonding device 10 toward the second side 12 of the die bonding device 10, so that the contact line 310 of the bonding wave 300 can sequentially cross the grooves 51-53 in a direction parallel to the second axis 17, and the second side of the wafer 100 gradually separates from the second side 12 of the die bonding device 10 until the wafer 100 is completely bonded to the substrate 200.

In some embodiments, the wafer 100 may also be replaced by a die. When the wafer 100 is attached to the substrate 200, the substrate 200 may be a wafer. When the die is attached to the substrate 200, the substrate 200 may be a wafer or a die.

In summary, the die bonding method of the present invention can form a wavy bonding wave 300 by the configuration positions of the first through holes 21-24, the second through holes 31-35, the third through holes 41-45, the first through holes 71-73 and the second through holes 81-85 and the switching timing of positive and negative pressure. In this way, the control area of the die bonding device 10 is increased, and the wavy bonding wave 300 can be evenly diffused, so that the wafer 100 or the die can slowly detach from the die bonding device 10 and be tightly bonded to the substrate 200 without generating any bubbles. The subsequent processing procedures of the wafer 100 or the die will not be affected by bubbles, thereby improving the yield rate of the products made by the subsequent processing.

Furthermore, before the bonding wave 300 expands to the second side of the wafer 100 or the die, the die bonding method of the present invention can extend the fourth negative pressure 94 from the third side 13 to the fourth side 14 of the die bonding device 10 through the grooves 51-53, providing a stronger fourth negative pressure 94 perpendicular to the bonding wave 300 to stably absorb the second side of the wafer 100 or the die, thereby preventing the bonding wave 300 from being damaged and preventing the wafer 100 or the die from falling down, and the wafer 100 or the die will not collide with the substrate 200 and be damaged.

In addition, because the grooves 51-53 are close to the second side 12 of the die bonding device 10, the grooves 51-53 are relatively short and close to each other. Therefore, the die bonding device 10 can accurately control the contact line 310 of the bonding wave 300 to sequentially cross the grooves 51-53 in a direction parallel to the second axis 17, thereby preventing the bonding wave 300 from being damaged and preventing the wafer 100 or the die from falling down, and the wafer 100 or the die will not collide with the substrate 200 and be damaged.

It is worth mentioning that, based on the above effects, the die bonding method of the present invention is quite suitable for application to wafers 100 or dies below 12 inches.

The above is only used to explain the preferred embodiment of the present invention, and is not intended to limit the present invention in any form. Therefore, any modification or change of the present invention made under the same spirit of the invention should still be included in the scope of protection intended by the present invention.

S10~S60: Steps

Claims (10)

A die bonding method using a wave-shaped bonding wave comprises the following steps: (a) defining an axis passing through a first side, a center and a second side of a die bonding device as a first axis, and defining an axis passing through a third side, the center and a fourth side of the die bonding device as a second axis; disposing a plurality of first through holes between the first side and the second axis of the die bonding device, and the first through holes are arranged along a first direction, wherein the first direction is parallel to the second axis; disposing a plurality of second through holes between the third side of the die bonding device and the first axis and close to the third side of the die bonding device, and the second through holes are arranged along a second direction, wherein the second through holes are arranged along a second direction, wherein the second through holes are arranged along a second direction. The die bonding device is provided with a plurality of third through holes disposed between the fourth side of the die bonding device and the first axis and close to the fourth side of the die bonding device, and the third through holes are arranged along the second direction; the plurality of first through holes are disposed between the first side of the die bonding device and the first through holes, and the first through holes are arranged along the first direction; and the plurality of second through holes are disposed on the die bonding device along the first axis; (b) the first through holes provide a first negative pressure, and the die bonding device absorbs a first side of a wafer or a die by the first negative pressure; the second through holes provide a second negative pressure, and the die bonding device absorbs the wafer or the die by the second negative pressure. (c) the die bonding device moves the wafer or the die to a top of a substrate; (d) the first through holes provide a first positive pressure, and the die bonding device blows the first side of the wafer or the die and acts on the first side of the wafer or the die by the first positive pressure, so that the first side of the wafer or the die is bent and deformed to contact the substrate and form a bonding wave; and (e) the first through holes, the second through holes and the third through holes are closed in sequence from the first side of the die bonding device to the second side of the die bonding device. The first negative pressure, the second negative pressure and the third negative pressure are closed, and the second through holes sequentially provide a second positive pressure from the first side of the die bonding device to the second side of the die bonding device; and the die bonding device sequentially blows the first side, a center and a second side of the wafer or the die along the first axis by the second positive pressure and sequentially Used on the first side, the center and the second side of the wafer or the die, so that a contact line of the bonding wave gradually expands from the first side of the wafer or the die to the second side of the wafer or the die, the degree of bending and deformation of the wafer or the die gradually increases, and a contact area between the wafer or the die and the substrate gradually increases. The die bonding method using a wave-shaped bonding wave as described in claim 1, wherein step (a) further comprises: the first through holes are arranged in at least one row along the first direction. The die bonding method using a wave-shaped bonding wave as described in claim 1, wherein step (a) further comprises: at least one of the first through holes is arranged between the third side of the die bonding device and the first axis, and the remaining first through holes are arranged between the fourth side of the die bonding device and the first axis. The die bonding method using a wave-shaped bonding wave as described in claim 1, wherein step (a) further comprises: the second through holes are arranged in at least one row along the second direction in an arc shape, the third through holes are arranged in at least one row along the second direction in an arc shape, and the second through holes and the third through holes are arranged on a circumference of at least one concentric circle. The die bonding method using a wave-shaped bonding wave as described in claim 1, wherein step (a) further comprises: the first through holes are arranged in at least one row along the first direction. A die bonding method using a wave-shaped bonding wave as described in claim 1, wherein step (a) further includes: arranging a plurality of grooves between the second side of the die bonding device and the second axis and close to the second side of the die bonding device; and arranging a plurality of fourth through holes in the grooves; wherein step (b) further includes: the fourth through holes provide a fourth negative pressure, and the die bonding device absorbs the wafer through the grooves by the fourth negative pressure. or the second side of the die; wherein, after step (e), further comprising: (f) the fourth through holes sequentially close the fourth negative pressure from the center of the die bonding device to the second side of the die bonding device, so that the contact line of the bonding wave can sequentially cross the grooves in a direction parallel to the second axis, and the second side of the wafer or die gradually separates from the second side of the die bonding device until the wafer or the die is completely bonded to the substrate. The die bonding method using a wave-shaped bonding wave as described in claim 6, wherein step (a) further includes: the grooves extend in a straight line along the second direction. The die bonding method using a wave-shaped bonding wave as described in claim 1, wherein step (d) further comprises: the pressure of the first positive pressure gradually increases, so that the contact line of the bonding wave crosses the first through-holes, the degree of bending and deformation of the wafer or the die gradually increases, and the contact area between the wafer or the die and the substrate gradually increases. The die bonding method using a wave-shaped bonding wave as described in claim 8, wherein step (e) further includes: the pressure of the second positive pressure is equal to the pressure after the first positive pressure is increased. The method for bonding a die using a wave-shaped bonding wave as described in claim 1, wherein step (e) further comprises: the first through holes synchronously close the first negative pressure, and at the same time one of the second through holes provides the second positive pressure, so that the contact line of the bonding wave crosses the first through holes and one of the second through holes, the degree of bending and deformation of the wafer or the die gradually increases, and the contact area between the wafer or the die and the substrate gradually increases; and the second through holes extend from the first side of the die bonding device to the second side of the die bonding device. The second negative pressure is sequentially closed in the direction from the first side of the die-bonding device to the second side of the die-bonding device, and the third through holes are sequentially closed in the direction from the first side of the die-bonding device to the second side of the die-bonding device, while the remaining second through holes are sequentially provided with the second positive pressure in the direction from the first side of the die-bonding device to the second side of the die-bonding device, so that the contact line of the bonding wave sequentially crosses the second through holes, the third through holes and the remaining second through holes, the degree of bending and deformation of the wafer or the die gradually increases, and the contact area between the wafer or the die and the substrate gradually increases.

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