TWI855558B - Semiconductor production equipment and cooling control method and device for crystal pulling furnace - Google Patents
Semiconductor production equipment and cooling control method and device for crystal pulling furnace Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 115
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000001816 cooling Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims abstract description 59
- 238000011084 recovery Methods 0.000 claims abstract description 41
- 238000001914 filtration Methods 0.000 claims description 13
- 238000004880 explosion Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 239000013618 particulate matter Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 117
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
本發明提供一種半導體生產設備和拉晶爐的冷卻控制方法及裝置。半導體生產設備包括：拉晶爐，包括主爐室；尾氣回收元件，與該拉晶爐的氣體輸出端連接，用於在拉晶步驟中回收並存儲該拉晶爐排出的保護氣體，該氣體處理元件的輸出端與拉晶爐的主爐室連通，該尾氣回收元件還用於在拉晶步驟結束後向該拉晶爐通入存儲的保護氣體。The present invention provides a semiconductor production equipment and a cooling control method and device for a crystal pulling furnace. The semiconductor production equipment includes: a crystal pulling furnace, including a main furnace chamber; a tail gas recovery element connected to the gas output end of the crystal pulling furnace, used to recover and store the protective gas discharged from the crystal pulling furnace during the crystal pulling step, the output end of the gas treatment element is connected to the main furnace chamber of the crystal pulling furnace, and the tail gas recovery element is also used to pass the stored protective gas into the crystal pulling furnace after the crystal pulling step is completed.
Description
本發明實施例屬於半導體技術領域，尤其屬於一種半導體生產設備和拉晶爐的冷卻控制方法及裝置。The embodiments of the present invention belong to the field of semiconductor technology, and more particularly to a cooling control method and device for semiconductor production equipment and a crystal pulling furnace.
單晶矽如今是大多數半導體元器件的基底材料，其中絕大多數的單晶矽都是由直拉單晶製造法製備。拉晶爐主要由底座、主爐室、爐蓋、副爐室構成，一般在拉晶結束後，需要在主爐室冷卻後才能進行後續的生產過程。相關技術中，通常打開主爐室，使其自然冷卻，或者使用鼓風機進行散溫吹掃，但是，這種方式的冷卻效率低，同時，主爐室剛打開時溫度較高，空氣中的氧氣會使內部部件氧化，影響拉晶爐的使用壽命。Single crystal silicon is now the base material for most semiconductor components, and the vast majority of single crystal silicon is produced by the Czochralski method. The crystal pulling furnace is mainly composed of a base, a main furnace chamber, a furnace cover, and an auxiliary furnace chamber. Generally, after the crystal pulling is completed, the main furnace chamber needs to be cooled before the subsequent production process can be carried out. In related technologies, the main furnace chamber is usually opened to allow it to cool naturally, or a blower is used to dissipate the heat. However, this method has low cooling efficiency. At the same time, the temperature of the main furnace chamber is relatively high when it is just opened, and the oxygen in the air will oxidize the internal components, affecting the service life of the crystal pulling furnace.
本發明實施例提供一種半導體生產設備和拉晶爐的冷卻控制方法及裝置，以解決主爐室內部結構氧化，影響拉晶爐的使用壽命的問題。The embodiments of the present invention provide a semiconductor production equipment and a cooling control method and device for a crystal pulling furnace to solve the problem of oxidation of the internal structure of the main furnace chamber, which affects the service life of the crystal pulling furnace.
為解決上述問題，本發明是這樣實現的： 第一方面，本發明實施例提供了一種半導體生產設備，包括： 拉晶爐，包括主爐室； 尾氣回收元件，與該拉晶爐的氣體輸出端連接，用於在拉晶步驟中回收並存儲該拉晶爐排出的保護氣體，該尾氣回收元件與拉晶爐的主爐室連通，該尾氣回收元件還用於在拉晶步驟結束後向該拉晶爐通入存儲的保護氣體； 該半導體生產設備還包括氣體處理元件，該氣體處理元件連接於該尾氣回收元件的輸出端和該拉晶爐的主爐室的進氣端之間，該氣體處理元件用於淨化該尾氣回收元件回收的保護氣體以及調節保護氣體的溫度。 To solve the above problems, the present invention is implemented as follows: In the first aspect, an embodiment of the present invention provides a semiconductor production equipment, including: A crystal pulling furnace, including a main furnace chamber; A tail gas recovery element, connected to the gas output end of the crystal pulling furnace, used to recover and store the protective gas discharged from the crystal pulling furnace during the crystal pulling step, the tail gas recovery element is connected to the main furnace chamber of the crystal pulling furnace, and the tail gas recovery element is also used to introduce the stored protective gas into the crystal pulling furnace after the crystal pulling step is completed; The semiconductor production equipment also includes a gas treatment element, which is connected between the output end of the tail gas recovery element and the gas inlet end of the main furnace chamber of the crystal pulling furnace. The gas treatment element is used to purify the protective gas recovered by the tail gas recovery element and adjust the temperature of the protective gas.
在一些實施例中，該氣體處理元件的輸出端通過設置於該拉晶爐的爐蓋上的泄爆閥與該拉晶爐的主爐室連通。In some embodiments, the output end of the gas processing element is connected to the main furnace chamber of the crystal pulling furnace through an explosion relief valve disposed on the furnace cover of the crystal pulling furnace.
在一些實施例中，該拉晶爐的主爐室內還設置有氣體擴散器，該泄爆閥與該氣體擴散器相連通。In some embodiments, a gas diffuser is further provided in the main furnace chamber of the crystal pulling furnace, and the explosion relief valve is connected to the gas diffuser.
在一些實施例中，該氣體擴散器沿該主爐室的縱向中軸線設置，該氣體擴散器包括多個出氣孔，且該出氣孔沿該氣體擴散器的徑向設置，該氣體擴散器設置於該主爐室的坩堝軸的上方。In some embodiments, the gas diffuser is arranged along the longitudinal center axis of the main furnace chamber, the gas diffuser includes a plurality of gas outlets, and the gas outlets are arranged along the radial direction of the gas diffuser, and the gas diffuser is arranged above the crucible axis of the main furnace chamber.
在一些實施例中，該氣體處理元件包括相互串聯的冷卻器和篩檢程式，該篩檢程式包括過濾顆粒物的濾網以及吸附水分的吸附介質。In some embodiments, the gas treatment element includes a cooler and a screening process connected in series, and the screening process includes a filter for filtering particulate matter and an adsorbent medium for adsorbing moisture.
第二方面，本發明實施例提供了一種拉晶爐的冷卻控制方法，應用於以上任一項所述的半導體生產設備，該方法包括： 在拉晶步驟過程中，通過該尾氣回收元件回收並存儲該拉晶爐排出的保護氣體； 在拉晶步驟結束後，通過該尾氣回收元件將存儲的保護氣體通入該拉晶爐的主爐室，以冷卻該主爐室。 In a second aspect, an embodiment of the present invention provides a cooling control method for a crystal pulling furnace, which is applied to any of the semiconductor production equipment described above, and the method comprises: During the crystal pulling step, the protective gas discharged from the crystal pulling furnace is recovered and stored by the tail gas recovery element; After the crystal pulling step is completed, the stored protective gas is introduced into the main furnace chamber of the crystal pulling furnace through the tail gas recovery element to cool the main furnace chamber.
在一些實施例中，該將該尾氣回收元件存儲的保護氣體通入該拉晶爐的主爐室，包括： 通過冷卻器將該保護氣體冷卻至目標溫度，其中，該目標溫度不高於40攝氏度； 通過篩檢程式對冷卻後的該保護氣體進行過濾處理，其中，過濾處理包括固體顆粒物過濾和乾燥處理中的至少一項； 將經過過濾處理後的該保護氣體通入該拉晶爐的主爐室。 In some embodiments, the protective gas stored in the tail gas recovery element is introduced into the main furnace chamber of the crystal pulling furnace, including: Cooling the protective gas to a target temperature through a cooler, wherein the target temperature is not higher than 40 degrees Celsius; Filtering the cooled protective gas through a screening program, wherein the filtering process includes at least one of solid particle filtering and drying treatment; Passing the filtered protective gas into the main furnace chamber of the crystal pulling furnace.
第三方面，本發明實施例提供了一種拉晶爐的冷卻控制裝置，應用於以上任一項所述的半導體生產設備，該裝置包括： 氣體回收控制模組，用於在拉晶步驟過程中，控制該尾氣回收元件回收並存儲該拉晶爐排出的保護氣體； 冷卻控制模組，用於在拉晶步驟結束後，控制該尾氣回收元件將存儲的保護氣體通入該拉晶爐的主爐室，以冷卻該主爐室。 In a third aspect, an embodiment of the present invention provides a cooling control device for a crystal pulling furnace, which is applied to any of the semiconductor production equipment described above, and the device includes: A gas recovery control module, which is used to control the tail gas recovery element to recover and store the protective gas discharged from the crystal pulling furnace during the crystal pulling step; A cooling control module, which is used to control the tail gas recovery element to pass the stored protective gas into the main furnace chamber of the crystal pulling furnace after the crystal pulling step is completed, so as to cool the main furnace chamber.
本發明實施例通過設置尾氣回收元件，能夠對拉晶步驟中使用的保護氣體進行回收儲存，為了避免矽棒被氧化，保護氣體一般為惰性氣體，例如氬氣，在拉晶結束之後，利用存儲的保護氣體對拉晶爐的主爐室內的結構進行冷卻，既有助於提高拉晶爐的冷卻速度，也能夠避免拉晶爐內部部件被氧化，有助於節約成本及提高拉晶爐的使用壽命。The embodiment of the present invention can recycle and store the protective gas used in the crystal pulling step by setting up a tail gas recovery element. In order to prevent the silicon rod from being oxidized, the protective gas is generally an inert gas, such as argon. After the crystal pulling is completed, the stored protective gas is used to cool the structure in the main furnace chamber of the crystal pulling furnace, which not only helps to increase the cooling rate of the crystal pulling furnace, but also prevents the internal components of the crystal pulling furnace from being oxidized, which helps to save costs and increase the service life of the crystal pulling furnace.
為利 貴審查委員了解本發明之技術特徵、內容與優點及其所能達到之功效，茲將本發明配合附圖及附件，並以實施例之表達形式詳細說明如下，而其中所使用之圖式，其主旨僅為示意及輔助說明書之用，未必為本發明實施後之真實比例與精準配置，故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的申請範圍，合先敘明。In order to help you understand the technical features, contents and advantages of the present invention and the effects it can achieve, the present invention is described in detail as follows with the accompanying drawings and appendices in the form of embodiments. The drawings used therein are only for illustration and auxiliary description, and may not be the true proportions and precise configurations after the implementation of the present invention. Therefore, the proportions and configurations of the attached drawings should not be interpreted to limit the scope of application of the present invention in actual implementation.
在本發明實施例的描述中，需要理解的是，術語“長度”、“寬度”、“上”、“下”、“前”、“後”、“左”、“右”、“垂直”、“水平”、“頂”、“底”“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係，僅是為了便於描述本發明實施例和簡化描述，而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作，因此不能理解為對本發明的限制。In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.
此外，術語“第一”、“第二”僅用於描述目的，而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此，限定有“第一”、“第二”的特徵可以明示或者隱含地包括一個或者更多個所述特徵。在本發明實施例的描述中，“多個”的含義是兩個或兩個以上，除非另有明確具體的限定。 下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述。 In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention.
本發明實施例提供了一種半導體生產設備。An embodiment of the present invention provides a semiconductor production equipment.
在一個實施例中，該半導體生產設備包括拉晶爐和尾氣回收元件。In one embodiment, the semiconductor production equipment includes a crystal pulling furnace and a tail gas recovery element.
如圖1所示，在一個實施例中，拉晶爐包括副爐室101、爐蓋102、主爐室103、主加熱器104、排氣管道105、坩堝軸106和底層隔熱氈107。As shown in FIG. 1 , in one embodiment, the crystal pulling furnace includes a secondary furnace chamber 101, a furnace cover 102, a main furnace chamber 103, a main heater 104, an exhaust pipe 105, a crucible shaft 106 and a bottom insulating felt 107.
拉晶步驟過程中，先將多晶矽材料放置在石英坩堝內融化，在直拉單晶過程中，先讓籽晶和熔體接觸，使固液介面處的熔體沿著籽晶冷卻結晶，並通過緩慢拉出籽晶而生長，縮頸完成之後通過降低拉速或熔體溫度來放大晶體生長直徑直至達到目標直徑，轉肩之後，通過控制拉速和熔體溫度使晶體生長進入“等徑生長”階段，最後，通過增大拉速和提高熔體溫度使晶體生長面的直徑逐步減小形成尾錐，直至最後晶體離開熔體表面，即完成了晶棒的生長。During the crystal pulling process, the polycrystalline silicon material is first placed in a quartz crucible to melt. In the process of pulling a single crystal, the seed crystal and the melt are first brought into contact, so that the melt at the solid-liquid interface cools and crystallizes along the seed crystal, and grows by slowly pulling out the seed crystal. After the necking is completed, the crystal growth diameter is enlarged by reducing the pulling speed or the melt temperature until the target diameter is reached. After the shoulder is turned, the crystal growth enters the "isodiametric growth" stage by controlling the pulling speed and the melt temperature. Finally, the diameter of the crystal growth surface is gradually reduced by increasing the pulling speed and raising the melt temperature to form a tail cone, until the last crystal leaves the melt surface, and the growth of the crystal rod is completed.
拉晶爐本身的結構和拉晶步驟具體可以參考相關技術，此處不再贅述。The structure of the crystal pulling furnace and the crystal pulling steps can be specifically referred to in related technologies and will not be elaborated here.
尾氣回收元件109與拉晶爐的氣體輸出端連接，尾氣回收元件109用於在拉晶步驟中回收並存儲拉晶爐排出的保護氣體。The tail gas recovery element 109 is connected to the gas output end of the crystal pulling furnace, and the tail gas recovery element 109 is used to recover and store the protective gas discharged from the crystal pulling furnace during the crystal pulling step.
本發明實施例提供了一種拉晶爐的冷卻控制方法，應用於本發明實施例中任一項所述的半導體生產設備。An embodiment of the present invention provides a cooling control method for a crystal pulling furnace, which is applied to the semiconductor production equipment described in any one of the embodiments of the present invention.
如圖2所示，在一個實施例中，該方法包括： 步驟201：在拉晶步驟過程中，通過該尾氣回收元件回收並存儲該拉晶爐排出的保護氣體。 As shown in FIG. 2 , in one embodiment, the method includes: Step 201: During the crystal pulling step, the protective gas discharged from the crystal pulling furnace is recovered and stored by the tail gas recovery element.
實施時，每一尾氣回收元件109可以與一台或多台拉晶爐的輸出端連接，以回收拉晶步驟中使用的保護氣體，一般來說，保護氣體選擇惰性氣體以避免晶棒氧化，示例性的，可以選擇包括但不限於氬氣等惰性氣體。During implementation, each tail gas recovery element 109 can be connected to the output end of one or more crystal pulling furnaces to recover the protective gas used in the crystal pulling step. Generally speaking, the protective gas is an inert gas to avoid oxidation of the crystal rod. Exemplary inert gases include but are not limited to argon.
步驟202：在拉晶步驟結束後，通過該尾氣回收元件將存儲的保護氣體通入該拉晶爐的主爐室以冷卻該主爐室。Step 202: After the crystal pulling step is completed, the stored protective gas is introduced into the main furnace chamber of the crystal pulling furnace through the tail gas recovery element to cool the main furnace chamber.
需要理解的是，氣體處理元件110的輸出端與拉晶爐的主爐室103連通，尾氣回收元件109還用於在拉晶步驟結束後向拉晶爐通入存儲的保護氣體。It should be understood that the output end of the gas processing element 110 is connected to the main furnace chamber 103 of the crystal pulling furnace, and the tail gas recovery element 109 is also used to introduce the stored protective gas into the crystal pulling furnace after the crystal pulling step is completed.
在拉晶結束之後，主爐室103內的溫度相對較高，此時，將氣體處理元件110中存儲的保護氣體通入拉晶爐的主爐室103，從而實現通過存儲的保護氣體冷卻主腔室內的各部件，尤其是冷卻主加熱器104和底部隔熱氈等內部的熱場部件。After the crystal pulling is completed, the temperature in the main furnace chamber 103 is relatively high. At this time, the protective gas stored in the gas treatment element 110 is introduced into the main furnace chamber 103 of the crystal pulling furnace, so that the components in the main chamber are cooled by the stored protective gas, especially the internal thermal field components such as the main heater 104 and the bottom insulation felt.
主腔室內的氣體進一步通過排氣管道105排出，實施時，排氣管道105可以再次連接至尾氣回收元件109進行保護氣體的回收，也可以經過處理達到排放要求後將保護氣體直接排放。The gas in the main chamber is further discharged through the exhaust pipe 105. During implementation, the exhaust pipe 105 can be connected to the tail gas recovery element 109 again to recover the protective gas, or the protective gas can be directly discharged after being processed to meet the emission requirements.
本發明實施例通過設置尾氣回收元件109，能夠對拉晶步驟中使用的保護氣體進行回收儲存，為了避免矽棒被氧化，保護氣體一般為惰性氣體，例如氬氣，在拉晶結束之後，利用存儲的保護氣體對拉晶爐的主爐室103內的結構進行冷卻，即有助於提高拉晶爐的冷卻速度，也能夠避免拉晶爐內部部件被氧化，有助於節約成本及提高拉晶爐使用壽命。The embodiment of the present invention can recycle and store the protective gas used in the crystal pulling step by providing the tail gas recovery element 109. In order to prevent the silicon rod from being oxidized, the protective gas is generally an inert gas, such as argon. After the crystal pulling is completed, the stored protective gas is used to cool the structure in the main furnace chamber 103 of the crystal pulling furnace, which helps to increase the cooling rate of the crystal pulling furnace and prevent the internal components of the crystal pulling furnace from being oxidized, thereby helping to save costs and increase the service life of the crystal pulling furnace.
同時，使用的保護氣體來自之前的加工步驟，能夠節約採購保護氣體的成本，也提高了保護氣體的利用率。At the same time, the protective gas used comes from the previous processing steps, which can save the cost of purchasing protective gas and improve the utilization rate of protective gas.
在一些實施例中，半導體生產設備還包括氣體處理元件110，氣體處理元件110連接於尾氣回收元件109的輸出端和拉晶爐的主爐室103的進氣端之間。In some embodiments, the semiconductor production equipment further includes a gas processing element 110, which is connected between the output end of the tail gas recovery element 109 and the gas inlet end of the main furnace chamber 103 of the crystal pulling furnace.
在一些實施例中，上述步驟202包括： 通過冷卻器將該保護氣體冷卻至目標溫度，其中，該目標溫度不高於40攝氏度； 通過篩檢程式1102對冷卻後的該保護氣體進行過濾處理，其中，過濾處理包括固體顆粒物過濾和乾燥處理中的至少一項； 將經過過濾處理後的該保護氣體通入該拉晶爐的主爐室。 In some embodiments, the above step 202 includes: Cooling the shielding gas to a target temperature through a cooler, wherein the target temperature is not higher than 40 degrees Celsius; Filtering the cooled shielding gas through a screening program 1102, wherein the filtering process includes at least one of solid particle filtering and drying; Passing the shielding gas after filtering into the main furnace chamber of the crystal pulling furnace.
本實施例中，進一步設置了氣體處理元件110，氣體處理元件110用於淨化尾氣回收元件109回收的保護氣體以及調節保護氣體的溫度。In this embodiment, a gas treatment element 110 is further provided, and the gas treatment element 110 is used to purify the protective gas recovered by the tail gas recovery element 109 and to adjust the temperature of the protective gas.
在其中一個實施例中，氣體處理元件110包括相互串聯的冷卻器1101和篩檢程式1102，冷卻器1101用於調整保護氣體的溫度，篩檢程式1102包括過濾顆粒物的濾網以及吸附水分的吸附介質中的一項或多項。In one embodiment, the gas treatment element 110 includes a cooler 1101 and a screening program 1102 connected in series, the cooler 1101 is used to adjust the temperature of the protective gas, and the screening program 1102 includes one or more of a filter for filtering particles and an adsorption medium for adsorbing moisture.
在一個示例性的實施例中，冷卻器1101可以選擇氣冷換熱器，優選為水冷換熱器，如圖3所示，可以是水冷板換熱器，實施時，該水冷板換熱器通過進水口通入室溫或低溫冷卻液，例如可以是水，冷卻液通過出水口排出，保護氣體從進氣口進入與冷卻液進行熱交換，冷卻後的保護氣體從出氣口排出。這樣，能夠快速的降低保護氣體的溫度。一般來說，可以將保護氣體冷卻至室溫，示例性的，可以是25攝氏度左右，這樣，只需要向水冷板換熱器的中通入常溫水源即可。In an exemplary embodiment, the cooler 1101 can be an air-cooled heat exchanger, preferably a water-cooled heat exchanger, as shown in FIG3 , which can be a water-cooled plate heat exchanger. During implementation, the water-cooled plate heat exchanger is introduced into the room temperature or low temperature coolant through the water inlet, for example, water, and the coolant is discharged through the water outlet. The protective gas enters from the air inlet and exchanges heat with the coolant, and the cooled protective gas is discharged from the air outlet. In this way, the temperature of the protective gas can be quickly reduced. Generally speaking, the protective gas can be cooled to room temperature, illustratively, it can be about 25 degrees Celsius. In this way, it is only necessary to introduce a normal temperature water source into the water-cooled plate heat exchanger.
篩檢程式1102內設置有濾網式過濾介質，能夠實現對保護氣體中的顆粒物進行過濾，篩檢程式1102內還可以設置吸附介質，能夠去除保護氣體中的水分，以提高保護氣體的純淨度。The screening program 1102 is provided with a filter-type filter medium, which can filter the particulate matter in the protective gas. The screening program 1102 can also be provided with an adsorption medium, which can remove the moisture in the protective gas to improve the purity of the protective gas.
在一些實施例中，氣體處理元件110的輸出端通過設置於拉晶爐的爐蓋102上的泄爆閥108與拉晶爐的主爐室103連通，這樣，能夠確保不會出現閃爆等危險。In some embodiments, the output end of the gas processing element 110 is connected to the main furnace chamber 103 of the crystal pulling furnace through the explosion relief valve 108 disposed on the furnace cover 102 of the crystal pulling furnace, so as to ensure that there will be no danger of flash explosion.
進一步的，在一些實施例中，拉晶爐的主爐室103內還設置有氣體擴散器111，泄爆閥108與氣體擴散器111相連通。氣體擴散器111用於提高保護氣體進入主爐室103後擴散的均勻性。Furthermore, in some embodiments, a gas diffuser 111 is further provided in the main furnace chamber 103 of the crystal pulling furnace, and the explosion relief valve 108 is connected to the gas diffuser 111. The gas diffuser 111 is used to improve the uniformity of diffusion of the protective gas after entering the main furnace chamber 103.
在一些實施例中，氣體擴散器111沿主爐室103的縱向中軸線設置，氣體擴散器111包括多個出氣孔1111，且出氣孔1111沿氣體擴散器111的徑向設置，氣體擴散器111設置於主爐室103的坩堝軸106的上方。In some embodiments, the gas diffuser 111 is disposed along the longitudinal center axis of the main furnace chamber 103 , the gas diffuser 111 includes a plurality of gas outlet holes 1111 , and the gas outlet holes 1111 are disposed along the radial direction of the gas diffuser 111 , and the gas diffuser 111 is disposed above the crucible axis 106 of the main furnace chamber 103 .
如圖1所示，在一個實施例中，該氣體擴散器111大概呈圓柱狀，實施時，氣體擴散器111的軸線大致沿著主爐室103的縱向中軸線的方向設置，出氣孔1111沿著氣體擴散器111的周向朝向主爐室103的內壁設置，從而有助於使保護氣體在主爐室103內擴散的更加均勻。As shown in FIG. 1 , in one embodiment, the gas diffuser 111 is roughly cylindrical. During implementation, the axis of the gas diffuser 111 is roughly arranged along the longitudinal center axis of the main furnace chamber 103, and the gas outlet holes 1111 are arranged along the circumference of the gas diffuser 111 toward the inner wall of the main furnace chamber 103, thereby helping to make the protective gas diffuse more evenly in the main furnace chamber 103.
本發明實施例提供了一種拉晶爐的冷卻控制裝置，應用於第一方面中任一項所述的半導體生產設備，該裝置包括： 氣體回收控制模組，用於在拉晶步驟過程中，控制該尾氣回收元件回收並存儲該拉晶爐排出的保護氣體； 冷卻控制模組，用於在拉晶步驟結束後，控制該尾氣回收元件將存儲的保護氣體通入該拉晶爐的主爐室，以冷卻該主爐室。 The present invention provides a cooling control device for a crystal pulling furnace, which is applied to any semiconductor production equipment described in the first aspect, and the device comprises: A gas recovery control module, which is used to control the tail gas recovery element to recover and store the protective gas discharged from the crystal pulling furnace during the crystal pulling step; A cooling control module, which is used to control the tail gas recovery element to pass the stored protective gas into the main furnace chamber of the crystal pulling furnace after the crystal pulling step is completed, so as to cool the main furnace chamber.
以上僅為本發明之較佳實施例，並非用來限定本發明之實施範圍，如果不脫離本發明之精神和範圍，對本發明進行修改或者等同替換，均應涵蓋在本發明申請專利範圍的保護範圍當中。The above are only preferred embodiments of the present invention and are not intended to limit the scope of implementation of the present invention. If the present invention is modified or replaced by something equivalent without departing from the spirit and scope of the present invention, it should be included in the protection scope of the patent application of the present invention.
101:副爐室 102:爐蓋 103:主爐室 104:主加熱器 105:排氣管道 106:坩堝軸 107:底層隔熱氈 108:泄爆閥 109:尾氣回收元件 110:氣體處理元件 111:氣體擴散器 1101:冷卻器 1102:篩檢程式 1111:出氣孔 201-202:步驟 101: auxiliary furnace chamber 102: furnace cover 103: main furnace chamber 104: main heater 105: exhaust pipe 106: crucible shaft 107: bottom insulation felt 108: explosion relief valve 109: tail gas recovery element 110: gas treatment element 111: gas diffuser 1101: cooler 1102: screening program 1111: air outlet 201-202: steps
圖1是本發明實施例提供的半導體生產設備的結構示意圖； 圖2是本發明實施例提供的拉晶爐的冷卻控制方法的流程圖； 圖3是本發明實施例提供的冷卻器的結構示意圖。 FIG. 1 is a schematic diagram of the structure of a semiconductor production device provided by an embodiment of the present invention; FIG. 2 is a flow chart of a cooling control method of a crystal pulling furnace provided by an embodiment of the present invention; FIG. 3 is a schematic diagram of the structure of a cooler provided by an embodiment of the present invention.
101:副爐室 101: Auxiliary furnace room
102:爐蓋 102: Furnace cover
103:主爐室 103: Main furnace room
104:主加熱器 104: Main heater
105:排氣管道 105: Exhaust duct
106:坩堝軸 106: Crucible shaft
107:底層隔熱氈 107: Bottom layer insulation felt
108:泄爆閥 108: Explosion relief valve
109:尾氣回收元件 109: Exhaust gas recovery element
110:氣體處理元件 110: Gas treatment components
111:氣體擴散器 111: Gas diffuser
1101:冷卻器 1101: Cooler
1102:篩檢程式 1102: Filtering program
1111:出氣孔 1111: Vent
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| US20050211157A1 (en) * | 2004-03-25 | 2005-09-29 | Radkevich Olexy V | Process control system for controlling a crystal-growing apparatus |
| KR101005988B1 (en) * | 2008-12-22 | 2011-01-05 | 주식회사 실트론 | Cooling Module and Cooling Method of Silicon Monocrystalline Ingot Manufacturing Equipment |
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| US20050211157A1 (en) * | 2004-03-25 | 2005-09-29 | Radkevich Olexy V | Process control system for controlling a crystal-growing apparatus |
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| CN102725437B (en) * | 2009-10-14 | 2015-03-18 | 雷卡特股份有限公司 | Method and device for separating argon in a gas mixture |
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