TWI855430B - Deposition system and method - Google Patents

Abstract

The present application relates to a deposition system and method. In one embodiment of the present application, the deposition system includes: a process chamber; a showerhead located in the process chamber; and a gas box connected to the showerhead via a gas pipeline and including a switching device; wherein the gas box contains a first source gas and a second source gas, and the switching device is operable to provide the first source gas to the gas pipeline during a first deposition process in the process chamber, and to provide the second source gas to the gas pipeline during a second deposition process in the process chamber, wherein the second deposition process is different from the first deposition process.

Description

Deposition system and method

This application relates generally to the field of semiconductor processing equipment and, more particularly, to deposition systems and methods.

Semiconductor processes may include thin film deposition processes, such as atomic layer deposition (ALD) and plasma enhanced chemical vapor deposition (PECVD), which are used to form various thin films on wafers or substrates to manufacture semiconductor devices. The thin films produced by the ALD process can have a higher bottom coverage, but it takes a longer time to obtain the required film thickness, so the ALD process has a lower wafer throughput (WPH). The PECVD process can achieve a high WPH, but the produced thin film has a lower bottom coverage. A single deposition process may not be able to meet specific production requirements for film quality (such as bottom coverage) and throughput (such as WPH) at the same time.

However, current deposition systems can only complete a single deposition process. Therefore, an improved deposition system and method are needed to simultaneously meet the requirements for film quality and throughput.

This application provides a deposition system that allows a variety of deposition processes to be performed in the same process chamber, thereby simplifying the process steps and improving productivity while ensuring film quality.

According to some embodiments of the present application, a deposition system may include: a process chamber; a showerhead located in the process chamber; and a gas box connected to the showerhead via a gas pipeline and including a switching device. The gas box includes a first source gas and a second source gas, and the switching device is operable to provide the first source gas to the gas pipeline during a first deposition process in the process chamber, and to provide the second source gas to the gas pipeline during a second deposition process in the process chamber, wherein the second deposition process is different from the first deposition process.

According to some embodiments of the present application, the deposition system also includes a heating device operable to heat the wafer in the process chamber so that the surface of the wafer has a first temperature during the first deposition process and has a second temperature during the second deposition process.

According to some embodiments of the present application, the first temperature is the same as or similar to the second temperature.

According to some embodiments of the present application, the deposition system also includes an RF device operable to provide a first RF power to the showerhead during the first deposition process and to provide a second RF power to the showerhead during the second deposition process.

According to some embodiments of the present application, the first RF power is different from the second RF power.

According to some embodiments of the present application, the first RF power is the same as the second RF power.

According to some embodiments of the present application, the first source gas is different from the second source gas.

According to some embodiments of the present application, the first source gas is the same as the second source gas.

According to some embodiments of the present application, the first deposition process or the second deposition process is a process selected from an atomic layer deposition process, a chemical vapor deposition process, a plasma enhanced atomic layer deposition process, a plasma enhanced chemical vapor deposition process, a thermal atomic layer deposition process, and a sub-atmospheric pressure chemical vapor deposition process.

According to some embodiments of the present application, a deposition method for a deposition system according to any embodiment of the present application may include: providing a wafer into a process chamber of the deposition system; performing a first deposition process on the wafer in the process chamber; during the first deposition process, controlling a switching device in a gas box to provide a first source gas in the gas box to a gas pipeline and then to a shower head in the process chamber; performing a second deposition process different from the first deposition process on the wafer in the process chamber; and during the second deposition process, controlling the switching device to provide a second source gas in the gas box to the gas pipeline and then to the shower head in the process chamber.

According to some embodiments of the present application, the first deposition process or the second deposition process is a process selected from an atomic layer deposition process, a chemical vapor deposition process, a plasma enhanced atomic layer deposition process, a plasma enhanced chemical vapor deposition process, a thermal atomic layer deposition process, and a sub-atmospheric pressure chemical vapor deposition process.

According to some embodiments of the present application, the method further comprises: during the first deposition process, heating the surface of the wafer to a first temperature by a heating device; and during the second deposition process, heating the surface of the wafer to a second temperature by the heating device.

According to some embodiments of the present application, the first temperature is the same as or similar to the second temperature.

According to some embodiments of the present application, the method further comprises: during the first deposition process, providing a first RF power to the showerhead by the RF device; and during the second deposition process, providing a second RF power to the showerhead by the RF device.

According to some embodiments of the present application, the first RF power is different from the second RF power.

According to some embodiments of the present application, the first RF power is the same as the second RF power.

According to some embodiments of the present application, the first source gas is different from the second source gas.

According to some embodiments of the present application, the first source gas is the same as the second source gas.

According to some embodiments of the present application, at least one of the first deposition process or the second deposition process is continuously performed multiple times on the wafer in the process chamber.

According to some embodiments of the present application, the deposition system continuously performs the first deposition process and the second deposition process in the process chamber.

According to some embodiments of the present application, the deposition system alternately performs the first deposition process and the second deposition process in the process chamber.

The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects and advantages will be apparent from the above description and drawings and the scope of the application.

In order to better understand the spirit of the present invention, some embodiments of the present invention are further described below.

The terms "in one embodiment" or "according to an embodiment" used in this specification do not necessarily refer to the same specific embodiment, and the terms "in other (some/certain) embodiments" or "according to other (some/certain) embodiments" used in this specification do not necessarily refer to different specific embodiments. The purpose is, for example, that the claimed subject matter includes a combination of all or part of the exemplary specific embodiments. The meaning of "upper" and "lower" referred to herein is not limited to the relationship directly presented in the drawings, and should include descriptions with a clear corresponding relationship, such as "left" and "right", or the opposite of "upper" and "lower". The term "connected" as used herein should be understood to cover "directly connected" and "connected via one or more intermediate components". The term "wafer" in this article should be understood to be interchangeable with the terms "chip", "base plate", "substrate", "substrate", etc., and can refer to any component on which a deposition process is performed, rather than a component with a specific structure and composition. The names of various components used in this manual are for illustrative purposes only and are not limiting. Different manufacturers may use different names to refer to components with the same function.

Various embodiments of the present invention are discussed in detail below. Although specific embodiments are discussed, it should be understood that these embodiments are for illustrative purposes only. Those skilled in the art will recognize that other components and configurations may be used without departing from the spirit and scope of protection of the present invention. The embodiments of the present invention may not necessarily include all components or steps in the embodiments described in the specification, and the execution order of each step may be adjusted according to actual applications.

As mentioned above, a single deposition process may not be able to simultaneously meet specific production requirements for film quality (e.g., bottom coverage) and throughput (e.g., WPH). In order to ensure film quality and meet production requirements, multiple deposition processes can be used to deposit multiple layers of different films on wafers. However, the current deposition system can only complete one deposition process in a process chamber. To perform different deposition processes, the wafers need to be placed in different process chambers for processing in turn. The operating steps are complicated and the throughput is low, and the wafers are easily contaminated during the wafer transfer process. This application provides an improved deposition system and method to solve the above problems.

FIG1 is a schematic diagram of a deposition system 10 according to some embodiments of the present application. The deposition system 10 may include a process chamber 1 and a gas box 3. A shower head 2 may be disposed in the process chamber 1, and the gas box 3 is connected to the shower head 2 via a gas pipeline 4.

As shown in FIG. 1 , the process chamber 1 may include a wafer carrier 5. The deposition system 10 may continuously perform a variety of deposition processes on the wafer 100 placed on the wafer carrier 5 without moving the wafer 100 out of the process chamber 1. Such deposition processes include but are not limited to atomic layer deposition (ALD) processes, chemical vapor deposition (CVD) processes, plasma enhanced atomic layer deposition (PEALD) processes, plasma enhanced chemical vapor deposition (PECVD) processes, thermal atomic layer deposition (Thermal ALD) processes, sub-atmospheric pressure chemical vapor deposition (SACVD) processes, etc. The gas box 3 can provide various gases required for the deposition process to the shower head 2 through the gas pipeline 4, such as the reaction source gas (reactant or precursor), the precursor carrier gas, the purge gas, etc. During the deposition process, the shower head 2 provides the wafer 100 with respective gases. In the example of FIG. 1 , the shower head 2 is located above the wafer 100. In other embodiments, the shower head 2 may be located below the wafer 100. In other embodiments, the shower head may be disposed both above and below the wafer 100.

The gas box 3 may contain a variety of gases. For the purpose of simplification, FIG. 1 only shows a first source gas 32 for a first deposition process, an inert gas 33, and a second source gas 34 for a second deposition process in the gas box 3, wherein the second deposition process is different from the first deposition process. These gases are stored in respective containers. Those skilled in the art should understand that the gas box 3 may also contain other gases for the first deposition process or the second deposition process, or gases for other deposition processes. The gas box 3 includes a switching device 31. The switching device 31 is operable to supply respective gases to the gas pipeline 4 during the deposition process, for example, to supply the first source gas 32 to the gas pipeline 4 during the first deposition process and to supply the second source gas 34 to the gas pipeline 4 during the second deposition process. The operation of the switching device 31 can be controlled by a system controller (not shown) according to a specific process flow. In some embodiments, the source gas used for the first deposition process is different from the source gas used for the second deposition process. In other embodiments, the source gas used for the first deposition process is the same as the source gas used for the second deposition process.

In some embodiments, the switching device 31 includes but is not limited to one or more valves 35, and the gas circuit can be switched by opening or closing the respective valves 35. In some embodiments, one or more valves 35 in the switching device 31 have a short switching time, for example, less than or equal to 20 ms, so that a fast switching deposition process can be achieved. The example of FIG. 1 only shows an exemplary configuration of the switching device 31. Those skilled in the art should understand that the switching device 31 may have other components and structures. In some embodiments, the switching device 31 may also be located outside the gas box 3.

In some embodiments, the gas pipeline 4 includes at least two gas pipelines, for example, one of the gas pipelines is used to transport a reactive source gas (e.g., the first source gas 32 or the second source gas 34), and the other gas pipeline is used to transport an inert gas 33 (e.g., a precursor carrier gas or a purge gas). In some embodiments, the first source gas 32 is a reactive source gas used in an ALD process, such as one or more of SAM24 (bis(diethylamino)silane), O ₂ and N ₂ O; the second source gas 34 is a reactive source gas used in a CVD process, such as TEOS (tetraethyl orthosilicate) and/or O ₂ . In some embodiments, the inert gas 33 includes a carrier gas for carrying a reaction source (e.g., SAM 24) into the gas pipeline 4. For example, a portion of a branch of a pipeline for providing the inert gas 33 can be selectively connected to the first source gas 32 so that the inert gas 33 carries the first source gas 32 into the gas pipeline 4. The setting of the gas pipeline 4 can be adjusted according to actual process requirements. The switching device 31 can be operated to selectively provide various gases to respective gas pipelines.

In some embodiments, the wafer carrier 5 may include a heating device. For example, a heating element (such as a resistor, etc.) and a temperature sensing or control device (such as a thermocouple, etc.) may be provided in the wafer carrier 5. The heating device may be operated to heat the wafer 100 in the process chamber 1 so that the surface temperature of the wafer 100 meets the requirements of the deposition process. For example, during the first deposition process, the surface of the wafer 100 may have a first temperature by the heating device; during the second deposition process, the surface of the wafer 100 may have a second temperature by the heating device. The first temperature may be the same as or different from the second temperature. When the first temperature is the same as or similar to the second temperature (for example, the difference between the two does not exceed 100° C.), the wafer 100 has the same or similar process temperature during the first deposition process and the second deposition process that are performed continuously, which can save time for the temperature ramping process and improve productivity. It should be understood that, depending on the specific process conditions and the temperature ramping operation method, the difference threshold used to determine whether the first temperature and the second temperature are the same or similar may also be higher or lower than 100° C.

In some embodiments, the deposition system 10 also includes an RF device 6 (e.g., an RF generator and a matching circuit, etc.). The showerhead 2 may serve as or include an RF electrode. The RF device 6 is connected to the showerhead 2 and is operable to provide the RF power required for the deposition process, for example, providing the first RF power to the showerhead 2 during the first deposition process and providing the second RF power to the showerhead 2 during the second deposition process. The first RF power may be the same as or different from the second RF power. In some embodiments, the RF device 6 may provide one or more of a high frequency power or a low frequency power. In some embodiments, the RF power provided by the RF device 6 ranges from 0 to 5000 W. The operation of the RF device 6 can be controlled by a system controller (not shown) according to a specific process flow. The RF device 6 can have a faster communication speed and a shorter communication time, for example, less than or equal to 10 ms, so as to realize a fast switching deposition process.

In some embodiments, the deposition system 10 may also include a vacuum pump 7. The vacuum pump 7 is connected to the process chamber 1 and is operable to extract gas from the process chamber 1. In some embodiments, the vacuum pump 7 includes a pressure control device that can be used to control the gas pressure in the process chamber 1.

According to some embodiments of the present application, the deposition system 10 can continuously perform a variety of deposition processes on a wafer in the same process chamber, and each deposition process can be performed once or multiple times, thereby simplifying the process steps and effectively improving the throughput while ensuring the film quality.

FIG2 is an exemplary flow chart of a deposition method 20 according to some embodiments of the present application. The deposition method 20 is described below in conjunction with the deposition system 10 shown in FIG1. Those skilled in the art should understand that the method 20 can also be applied to other deposition systems with similar structures or configurations.

As shown in FIG. 2 , the deposition method 20 includes: step S1: providing a wafer 100 into a process chamber 1; step S2: performing a first deposition process on the wafer 100 in the process chamber 1; and step S3: performing a second deposition process on the wafer 100 in the process chamber 1. The first deposition process is different from the second deposition process. The deposition method 20 also includes: during the first deposition process, controlling the switching device 31 to provide a first source gas 32 in the gas box 3 to the gas pipeline 4; during the second deposition process, controlling the switching device 31 to provide a second source gas 34 in the gas box 3 to the gas pipeline 4. The first source gas 32 may be the same as or different from the second source gas 34.

In some embodiments, the deposition method 20 also includes: during the first deposition process, heating the surface of the wafer 100 to a first temperature by a heating device (e.g., a heating device in the wafer carrier 5); during the second deposition process, heating the surface of the wafer 100 to a second temperature by a heating device. The first temperature may be the same as or different from the second temperature. When the first temperature is the same or similar to the second temperature (e.g., the difference between the two does not exceed 100°C), the time used for the temperature rise and fall procedures when switching the deposition process can be saved, thereby improving productivity. It should be understood that, depending on the specific process conditions and the temperature rise and fall operation method, the difference threshold used to determine whether the first temperature and the second temperature are the same or similar may also be higher or lower than 100°C.

In some embodiments, the deposition method 20 also includes: during the first deposition process, the RF device 6 provides a first RF power to the showerhead 2 in the process chamber 1; during the second deposition process, the RF device 6 provides a second RF power to the showerhead 2 in the process chamber 1. The first RF power may be the same as or different from the second RF power.

In some embodiments, at least one of the first deposition process or the second deposition process may be continuously performed multiple times on the wafer 100 in the process chamber 1. For example, the second deposition process may be performed once after the first deposition process is continuously performed multiple times; or the second deposition process may be continuously performed multiple times after the first deposition process is performed once; or the second deposition process may be continuously performed multiple times after the first deposition process is continuously performed multiple times.

In some embodiments, the first deposition process and the second deposition process may be continuously performed on the wafer 100 in the process chamber 1, that is, the second deposition process may be performed immediately after performing the first deposition process once or multiple times. In other embodiments, after performing the first deposition process once or multiple times, other processes may be performed, and then the second deposition process may be performed.

In some embodiments, the first deposition process and the second deposition process may be alternately performed on the wafer 100 in the process chamber 1. For example, after performing the first deposition process once or multiple times, the second deposition process may be performed once or multiple times, and then the first deposition process may be performed once or multiple times again, and then the second deposition process may be performed once or multiple times again.

In some embodiments, other deposition processes different from the first deposition process and the second deposition process, such as a third deposition process, may be performed on the wafer 100 in the process chamber 1. Similarly, during the third deposition process, the surface of the wafer 100 may be heated to a third temperature by a heating device, or a third RF power may be provided to the shower head 2 in the process chamber 1 by an RF device 6.

FIG. 3 is an exemplary flow chart of performing two deposition processes in a process chamber (e.g., process chamber 1 shown in FIG. 1 ) according to some embodiments of the present application. The process flow can be implemented in the deposition system 10 shown in FIG. 1 , or in other deposition systems having similar structures or configurations. The example of FIG. 3 can be used to deposit SiO films, wherein the first deposition process is a PEALD process and the second deposition process is a PECVD process. In other embodiments, different gases and deposition processes can be used to form different thin films (e.g., SiN, TiO, etc.).

As shown in FIG3 , first, in step S11, O ₂ , N ₂ O, remote plasma source (RPS) Ar, and Ar carrier gas that does not carry reaction precursors are introduced into the process chamber. For example, the switching device 31 can be controlled to provide O ₂ , N ₂ O, RPS Ar, and Ar carrier gas that does not carry reaction precursors in the gas box 3 to the respective gas pipelines 4, and then to the showerhead 2 in the process chamber 1. In one embodiment, the flow rate of _O2 may be 1000 to 30000 sccm, the flow rate of _N2O may be 0 to 30000 sccm, the flow rate of RPS Ar may be 0 to 10000 sccm, the flow rate of Ar carrier gas may be 500 to 10000 sccm, the pressure in the process chamber may be 1 to 10 torr, and the gap between the showerhead and the wafer may be 5 mm to 80 mm. In other embodiments, other process parameters may be used according to actual needs.

Next, in step S12, O ₂ , N ₂ O, RPS Ar, and Ar carrier gas carrying reaction precursors (e.g., SAM 24) are introduced into the process chamber in a pulsed form. For example, the switching device 31 can be controlled to provide O ₂ , N ₂ O, RPS Ar, and Ar carrier gas carrying reaction precursors in the gas box 3 to respective gas pipes 4, and then to the showerhead 2 in the process chamber 1. The reaction precursors can be deposited on the surface of the wafer in the process chamber by adsorption reaction. In one embodiment, the type and flow rate of the gas introduced in step S12 are the same as those in step S11, except that the gas introduced in step S12 includes an Ar carrier gas for carrying the reaction precursor, and the gas pressure in the process chamber and the gap between the shower head and the wafer are the same as those in step S11. In other embodiments, the type of gas introduced in step S12, the gas flow rate, the gas pressure in the process chamber, and the gap between the shower head and the wafer may be different from those in step S11.

Then, in step S13, a purge step is performed, for example, O ₂ , N ₂ O, RPS Ar, and Ar carrier gas that does not carry reaction precursors are introduced into the process chamber to remove excess reaction precursors and byproducts from the surface of the wafer. In one embodiment, the type and flow rate of the gas introduced in step S13 are the same as the type and flow rate of the gas introduced in step S12, the only difference being that the gas introduced in step S13 does not carry reaction precursors, and the gas pressure in the process chamber and the gap between the showerhead and the wafer are also the same as those in step S12. In other embodiments, the type of gas introduced, the gas flow rate, the gas pressure in the process chamber, and the gap between the showerhead and the wafer in step S13 may be different from those in step S12.

Next, in step S14, while the same gas as in step S13 is continuously introduced, the RF device (e.g., the RF device 6 shown in FIG. 1 ) is turned on to provide the first RF power to the process chamber (e.g., to the showerhead 2 in the process chamber 1). The first RF power acts on the gas in the process chamber to generate plasma, thereby causing the formation of covalent bonds on the surface of the wafer in the process chamber. In one embodiment, the first RF power includes one or more of high frequency power or low frequency power. In one embodiment, the first RF power ranges from 0 to 5000 W.

Then, in step S15, while the same gas as in step S13 is continuously introduced, the RF device is turned off, thereby completing a PEALD deposition process.

In one embodiment, steps S12 to S15 may be repeatedly executed multiple times (eg, N times) to perform multiple PEALD deposition processes.

Next, in step S21, O ₂ , N ₂ O, RPS Ar, and Ar carrier gas carrying a reaction precursor are introduced into the process chamber. In one embodiment, the reaction precursor in step S21 may be the same as the reaction precursor in step S12, such as SAM24. In another embodiment, the reaction precursor in step S21 may be TEOS. The type of gas introduced in step S21, the gas flow rate, the gas pressure in the process chamber, and the gap between the showerhead and the wafer may be the same or different from the previous steps S11 to S15.

Then, in step S22, while the same gas as in step S21 is continuously introduced, the RF device (e.g., the RF device 6 shown in FIG. 1 ) is turned on to provide a second RF power to the process chamber (e.g., to the showerhead 2 in the process chamber 1) to generate plasma for deposition. In one embodiment, the second RF power includes one or more of high frequency power or low frequency power. In one embodiment, the second RF power ranges from 0 to 5000 W. The second RF power may be the same as or different from the first RF power in step S14.

In one embodiment, steps S21 to S22 may be repeatedly performed multiple times (eg, M times, where M may be the same as or different from N) to perform multiple PECVD deposition processes.

Finally, in step S23, the gas supply is stopped and the RF device is turned off, thereby completing all deposition processes. In some embodiments, other deposition processes may also be performed between steps S22 and S23.

Although FIG. 3 exemplarily describes the process of performing PEALD and PECVD processes in one process chamber, the present application is not limited thereto. The deposition system of the present application can also be used to perform a variety of different processes, and has different process flows according to different deposition processes.

4A to 4C are schematic diagrams of a thin film deposition process according to some embodiments of the present application. In this process, it is necessary to fill a groove 401 on the surface of a wafer 400. This process can be implemented in the deposition system 10 shown in FIG. 1, or in other deposition systems with similar structures or configurations. This process can be implemented using the method shown in FIG. 2 or FIG. 3 or a similar method.

As shown in FIGS. 4A to 4C , after the wafer 400 is provided into a process chamber (e.g., the process chamber 1 shown in FIG. 1 ), a first deposition process may be performed on the surface of the wafer 400 to form a first film 402 (as shown in FIG. 4B ). The first film 402 may be formed on the bottom and side walls of the groove 401 and close the top of the groove 401. Air holes 403 may be left in the groove 401. Then, a second deposition process may be performed on the surface of the wafer 400 to form a second film 404 (as shown in FIG. 4C ). In one embodiment, the first deposition process is a PEALD process, so the first film 402 may have a better coverage. In one embodiment, the second deposition process is a PECVD process, so the second film 404 may have a faster deposition rate.

5A to 5C are schematic diagrams of thin film deposition processes according to other embodiments of the present application. In this process, it is necessary to fill the groove 501 on the surface of the wafer 500. This process can be implemented in the deposition system 10 shown in FIG. 1, and can also be implemented in other deposition systems with similar structures or configurations. This process can be implemented using the method shown in FIG. 2 or FIG. 3 or a similar method.

As shown in FIGS. 5A to 5C , after the wafer 500 is provided into a process chamber (e.g., the process chamber 1 shown in FIG. 1 ), a first deposition process may be performed on the surface of the wafer 500 to form a first film 502 (as shown in FIG. 5B ). The first film 502 may be formed on the bottom and sidewalls of the groove 501 and completely fill the groove 501. Then, a second deposition process may be performed on the surface of the wafer 500 to form a second film 503 (as shown in FIG. 5C ). In one embodiment, the first deposition process is a PEALD process, so the first film 502 may have a better coverage. In one embodiment, the second deposition process is a PECVD process, so the second film 503 may have a faster deposition rate.

The deposition system of the present application can deposit various types of thin films on a wafer, and the deposition process and process sequence can be changed according to specific process requirements. In one embodiment, CVD, ALD and CVD processes can be sequentially performed on a wafer to prepare a thin film that meets the process requirements.

According to the embodiments of the present application, the deposition system and method of the present application can perform two or more different deposition processes on a wafer in the same process chamber, thereby simplifying the process steps and effectively improving the throughput while meeting the film quality requirements.

The description in this specification is provided to enable one skilled in the art to make or use the invention. Various modifications to the invention will be readily apparent to one skilled in the art, and the general principles defined in this specification may be applied to other variations without departing from the spirit or scope of the invention. Therefore, the invention is not limited to the examples and designs described in this specification, but is to be given the widest scope consistent with the principles and novel features disclosed in this specification.

1: Process chamber 2: Shower head 3: Gas box 4: Gas pipeline 5: Wafer carrier 6: RF device 7: Vacuum pump 10: Deposition system 20: Deposition method 31: Switching device 32: First source gas 33: Inert gas 34: Second source gas 35: Valve 100: Wafer 400: Wafer 401: Groove 402: First film 403: Air hole 404: Second film 500: Wafer 501: Groove 502: First film 503: Second film S1: Step S2: Step S3: Step S11: Step S12: Step S13: Step S14: Step S15: Step S21: Step S22: Step S23: Step

The disclosure in this specification refers to and includes the following figures: Figure 1 is a schematic diagram of the structure of a deposition system according to some embodiments of the present application; Figure 2 is an exemplary flow chart of a deposition method according to some embodiments of the present application; Figure 3 is an exemplary flow chart of performing two deposition processes in a process chamber according to some embodiments of the present application; Figures 4A to 4C are schematic diagrams of thin film deposition procedures according to some embodiments of the present application; and Figures 5A to 5C are schematic diagrams of thin film deposition procedures according to other embodiments of the present application.

As a rule, the various features depicted in the drawings may not be drawn to scale. Therefore, the sizes of the various features may be arbitrarily enlarged or reduced for clarity. The shapes of the components depicted in the drawings are merely illustrative and do not limit the actual shapes of the components. In addition, the embodiments depicted in the drawings may be simplified for clarity. Therefore, the drawings may not depict all components of a given device or apparatus. Finally, the same reference numerals may be used throughout the specification and drawings to represent the same features.

1: Process cavity

2: Shower head

3: Air box

4: Gas pipeline

5: Wafer carrier

6: RF device

7: Vacuum pump

10:Deposition system

31: Switch device

32: First source gas

33: Inert gas

34: Second source gas

35: Valve

100: Wafer

Claims (22)

A deposition system includes: a process chamber; a showerhead located in the process chamber; and a gas box connected to the showerhead via a gas pipeline and including a switching device, wherein the gas pipeline includes a first pipeline and a second pipeline different from the first pipeline; wherein the gas box contains a first source gas, a second source gas and an inert gas, and the switching device is operable to provide the first source gas to the first pipeline during a first deposition process in the process chamber, and to provide the second source gas to the first pipeline during a second deposition process in the process chamber, the second deposition process being different from the first deposition process, and wherein the switching device is operable to provide the inert gas to the second pipeline. The deposition system of claim 1 also includes a heating device operable to heat the wafer in the process chamber so that the surface of the wafer has a first temperature during the first deposition process and a second temperature during the second deposition process. A deposition system as claimed in claim 2, wherein the difference between the first temperature and the second temperature does not exceed 100°C. The deposition system of claim 1 also includes an RF device operable to provide a first RF power to the showerhead during the first deposition process and to provide a second RF power to the showerhead during the second deposition process. A deposition system as claimed in claim 4, wherein the first RF power is different from the second RF power. A deposition system as claimed in claim 4, wherein the first RF power is the same as the second RF power. A deposition system as claimed in claim 1, wherein the first source gas is different from the second source gas. A deposition system as claimed in claim 1, wherein the first source gas is the same as the second source gas. A deposition system as claimed in claim 1, wherein the first deposition process or the second deposition process is an atomic layer deposition process, a chemical vapor deposition process, a plasma enhanced atomic layer deposition process, a plasma enhanced chemical vapor deposition process, a thermal atomic layer deposition process or a sub-atmospheric pressure chemical vapor deposition process. A deposition system as claimed in claim 1, wherein the inert gas is connected to a remote plasma source. A deposition method, comprising: providing a wafer into the process chamber of the deposition system as claimed in any one of claims 1 to 10; performing the first deposition process on the wafer in the process chamber; during the first deposition process, controlling the switching device to provide the first source gas in the gas box to the first pipeline; performing the second deposition process on the wafer in the process chamber; and during the second deposition process, controlling the switching device to provide the second source gas in the gas box to the first pipeline. The deposition method of claim 11, wherein the first deposition process or the second deposition process is an atomic layer deposition process, a chemical vapor deposition process, a plasma enhanced atomic layer deposition process, a plasma enhanced chemical vapor deposition process, a thermal atomic layer deposition process or a sub-atmospheric pressure chemical vapor deposition process. The deposition method of claim 11 further comprises: during the first deposition process, heating the surface of the wafer to a first temperature by a heating device; and during the second deposition process, heating the surface of the wafer to a second temperature by the heating device. A deposition method as claimed in claim 13, wherein the difference between the first temperature and the second temperature does not exceed 100°C. The deposition method of claim 11 further comprises: during the first deposition process, providing the first RF power to the shower head by the RF device; and during the second deposition process, providing the second RF power to the shower head by the RF device. A deposition method as claimed in claim 15, wherein the first RF power is different from the second RF power. A deposition method as claimed in claim 15, wherein the first RF power is the same as the second RF power. A deposition method as claimed in claim 11, wherein the first source gas is different from the second source gas. A deposition method as claimed in claim 11, wherein the first source gas is the same as the second source gas. A deposition method as claimed in claim 11, wherein the first deposition process or the second deposition process is continuously performed multiple times on the wafer in the process chamber. A deposition method as claimed in claim 11, wherein the deposition system continuously performs the first deposition process and the second deposition process in the process chamber. A deposition method as claimed in claim 11, wherein the deposition system alternately performs the first deposition process and the second deposition process in the process chamber.