TWI854607B - Wafer processing device, semiconductor chip manufacturing method and semiconductor chip - Google Patents
Wafer processing device, semiconductor chip manufacturing method and semiconductor chip Download PDFInfo
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Abstract
本發明之晶圓加工裝置具備:晶圓取放部,其自晶圓盒部取出晶圓,或向晶圓盒部放入晶圓;切割部,其切割晶圓;及晶圓加工部,其對晶圓進行與切割不同之加工。晶圓取放部係以位在切割部與晶圓加工部之間之方式配置。The wafer processing device of the present invention comprises: a wafer handling part, which takes out a wafer from a wafer box part or puts a wafer into a wafer box part; a cutting part, which cuts a wafer; and a wafer processing part, which performs processing different from cutting on the wafer. The wafer handling part is arranged in a manner of being located between the cutting part and the wafer processing part.
Description
本發明係關於一種晶圓加工裝置、半導體晶片之製造方法及半導體晶片,尤其關於一種具備切割晶圓之切割部之晶圓加工裝置、半導體晶片之製造方法及半導體晶片。The present invention relates to a wafer processing device, a method for manufacturing a semiconductor chip and a semiconductor chip, and more particularly to a wafer processing device having a cutting section for cutting wafers, a method for manufacturing a semiconductor chip and a semiconductor chip.
先前,已知有具備切割晶圓之切割部之晶圓加工裝置。此種晶圓加工裝置例如於日本專利特開2007-173587號公報中有所揭示。Previously, a wafer processing device having a cutting unit for cutting wafers is known, and such a wafer processing device is disclosed in Japanese Patent Laid-Open No. 2007-173587, for example.
上述日本專利特開2007-173587號公報中揭示有一種切割裝置(晶圓加工裝置),其具備:晶圓盒,其收容晶圓;升降機,其自晶圓盒取出晶圓,或向晶圓盒放入晶圓;雷射切割部,其對晶圓進行切割;擴展部,其將經過切割之晶圓之片材擴展;及搬送器件,其自升降機向雷射切割部搬送晶圓,並且自雷射切割部向擴展部搬送晶圓。該切割裝置中,收容有晶圓之晶圓盒、雷射切割部及擴展部依序排列而配置,藉由搬送器件將自晶圓盒取出之晶圓依序搬送至雷射切割部及擴展部並進行加工處理。The Japanese Patent Publication No. 2007-173587 discloses a cutting device (wafer processing device) which includes: a wafer box for accommodating wafers; an elevator for taking out wafers from the wafer box or putting wafers into the wafer box; a laser cutting unit for cutting wafers; an expansion unit for expanding the wafer sheet after cutting; and a transport device for transporting wafers from the elevator to the laser cutting unit and from the laser cutting unit to the expansion unit. In the cutting device, the wafer box accommodating wafers, the laser cutting unit and the expansion unit are arranged in sequence, and the wafers taken out from the wafer box are transported to the laser cutting unit and the expansion unit in sequence by the transport device for processing.
但上述日本專利特開2007-173587號公報之切割裝置中,收容有晶圓之晶圓盒、雷射切割部及擴展部依序排列而配置,藉由搬送器件將自晶圓盒取出之晶圓依序搬送至雷射切割部及擴展部並進行加工處理。因此,即便對晶圓只進行僅切割之加工處理、或僅擴展之加工處理時,亦需將晶圓自晶圓盒取出並依序搬送至切割部及擴展部。故而,要向無需開展加工處理之加工處理部搬送晶圓,因此難以效率良好地進行晶圓之加工處理。故而,期望一種即便只進行複數個加工處理中之一部分加工處理時,亦能效率良好地進行晶圓之加工處理之晶圓加工裝置。However, in the cutting device of the Japanese Patent Publication No. 2007-173587, a wafer box containing wafers, a laser cutting unit and an expansion unit are arranged in sequence, and the wafer taken out from the wafer box is sequentially transported to the laser cutting unit and the expansion unit by a transport device for processing. Therefore, even if the wafer is only processed by cutting or only expanded, the wafer needs to be taken out from the wafer box and sequentially transported to the cutting unit and the expansion unit. Therefore, it is difficult to efficiently process the wafer in order to transport the wafer to the processing unit that does not need to carry out processing. Therefore, a wafer processing device that can efficiently process the wafer even if only a part of a plurality of processing is carried out is desired.
本發明係為了解決如上所述之問題而研究獲得,本發明之1個目的在於,提供一種只進行複數個加工處理中之一部分加工處理時,亦能效率良好地進行晶圓之加工處理之晶圓加工裝置、半導體晶片之製造方法及半導體晶片。The present invention is obtained through research to solve the above-mentioned problems. One purpose of the present invention is to provide a wafer processing device, a method for manufacturing a semiconductor chip, and a semiconductor chip that can efficiently process a wafer when only a part of a plurality of processing steps is performed.
本發明之第1態樣之晶圓加工裝置具備:晶圓盒部,其收容晶圓;晶圓取放部,其自晶圓盒部取出晶圓,或向晶圓盒部放入晶圓;切割部,其切割晶圓;及晶圓加工部,其對晶圓進行與切割不同之加工;且晶圓取放部係以位在切割部與晶圓加工部之間之方式配置。The wafer processing device of the first aspect of the present invention comprises: a wafer box part, which accommodates wafers; a wafer placement part, which takes out wafers from the wafer box part or puts wafers into the wafer box part; a cutting part, which cuts wafers; and a wafer processing part, which performs processing on the wafer that is different from cutting; and the wafer placement part is configured in a manner of being located between the cutting part and the wafer processing part.
本發明之第1態樣之晶圓加工裝置中,如上所述,晶圓取放部係以位在切割部與晶圓加工部之間之方式配置。藉此,能對切割部及晶圓加工部中之一者,不經由切割部及晶圓加工部中之另一者地自晶圓盒部直接供給晶圓,因此進行一部分加工處理時,能獨立地進行加工處理。其結果,即便只進行複數個加工處理中之一部分加工處理時,亦能效率良好地進行晶圓之加工處理。又,連續地進行切割部及晶圓加工部所實施之處理之情形時,藉由使晶圓於切割部與晶圓加工部之間移動,能進行複數個加工處理。In the wafer processing device of the first aspect of the present invention, as described above, the wafer placement section is configured in a manner of being located between the cutting section and the wafer processing section. Thereby, the wafer can be directly supplied from the wafer box section to one of the cutting section and the wafer processing section without passing through the other of the cutting section and the wafer processing section, so that when a part of the processing is performed, the processing can be performed independently. As a result, even when only a part of the processing is performed among a plurality of processings, the processing of the wafer can be performed efficiently. In addition, when the processing performed by the cutting section and the wafer processing section is performed continuously, a plurality of processings can be performed by moving the wafer between the cutting section and the wafer processing section.
上述第1態樣之晶圓加工裝置中,較佳為:進而具備晶圓搬送部,該晶圓搬送部自晶圓取放部接收晶圓,並將晶圓搬送至切割部或晶圓加工部。若如此構成,則能藉由晶圓搬送部於晶圓取放部、切割部及晶圓加工部之間容易地搬送晶圓。In the wafer processing device of the first aspect, it is preferred that: a wafer transport unit is further provided, which receives the wafer from the wafer placement unit and transports the wafer to the cutting unit or the wafer processing unit. If so configured, the wafer can be easily transported between the wafer placement unit, the cutting unit and the wafer processing unit by the wafer transport unit.
該情形時,較佳為:切割部之晶圓之交接位置、晶圓加工部之晶圓之交接位置、及自晶圓取放部向晶圓搬送部之晶圓之交接位置呈直線狀配置,且晶圓搬送部係以可沿著晶圓取放部、切割部及晶圓加工部排列之方向呈直線狀移動之方式構成。若如此構成,則能藉由直線狀之移送軸於切割部之晶圓之交接位置、晶圓加工部之晶圓之交接位置、及自晶圓取放部向晶圓搬送部之晶圓之交接位置之間進行搬送,因此能抑制搬送晶圓之構成複雜化。又,能藉由晶圓搬送部於切割部與晶圓加工部之間容易地直接搬送晶圓。In this case, it is preferable that the wafer handover position of the cutting section, the wafer handover position of the wafer processing section, and the wafer handover position from the wafer placement section to the wafer transport section are arranged in a straight line, and the wafer transport section is constructed in a manner that can move in a straight line along the direction in which the wafer placement section, the cutting section, and the wafer processing section are arranged. If so constructed, the wafer can be transported between the wafer handover position of the cutting section, the wafer processing section, and the wafer handover position from the wafer placement section to the wafer transport section by a straight-line transfer axis, thereby suppressing the complexity of the structure for transporting wafers. In addition, the wafer can be easily and directly transported between the cutting section and the wafer processing section by the wafer transport section.
具備上述晶圓搬送部之構成中,較佳為:晶圓搬送部係以於晶圓取放部、切割部及晶圓加工部之間,搬送包含片狀構件與環狀之環狀構件之晶圓環構造體之方式構成,上述片狀構件貼附有晶圓,且具有伸縮性,上述環狀構件以包圍晶圓之狀態貼附於片狀構件。若如此構成,藉由即便晶圓之大小不同,亦使環狀構件之形狀共通,能藉由晶圓搬送部於切割部與晶圓加工部之間容易地搬送不同大小之晶圓。In the configuration of the wafer conveying unit, it is preferred that the wafer conveying unit is configured to convey a wafer ring structure including a sheet member and a ring member between the wafer placement unit, the cutting unit, and the wafer processing unit, wherein the sheet member is attached with a wafer and has elasticity, and the ring member is attached to the sheet member in a state of surrounding the wafer. If configured in this way, even if the wafers are of different sizes, the shape of the ring member is made common, and wafers of different sizes can be easily conveyed between the cutting unit and the wafer processing unit by the wafer conveying unit.
上述第1態樣之晶圓加工裝置中,較佳為:晶圓加工部包含拉伸配置有晶圓之片狀構件而分割晶圓之擴展部、或研磨晶圓之打磨部。若如此構成,則能單獨或連續地對晶圓進行切割及擴展之加工處理、或研磨及切割之加工處理。In the wafer processing device of the first aspect, it is preferred that the wafer processing section includes an expansion section for stretching a sheet member on which a wafer is disposed to split the wafer, or a grinding section for grinding the wafer. If so configured, the wafer can be cut and expanded, or ground and cut, individually or continuously.
上述第1態樣之晶圓加工裝置中,較佳為:晶圓盒部及晶圓取放部沿著與晶圓取放部、切割部及晶圓加工部排列之方向正交之方向排列而配置。若如此構成,使晶圓向切割部及晶圓加工部移動時,能抑制晶圓盒部干涉到移動之晶圓。In the wafer processing device of the first aspect, it is preferred that the wafer box and the wafer handling part are arranged in a direction orthogonal to the direction in which the wafer handling part, the cutting part and the wafer processing part are arranged. If so configured, when the wafer moves to the cutting part and the wafer processing part, the wafer box can be prevented from interfering with the moving wafer.
上述晶圓加工部包含擴展部或打磨部之構成中,較佳為:作為晶圓加工部之擴展部之晶圓冷卻部及晶圓加熱部沿著與晶圓取放部、切割部及晶圓加工部排列之方向正交之方向排列而配置。若如此構成,使晶圓向切割部及晶圓加工部移動時,能抑制晶圓加熱部之構件干涉到移動之晶圓。In the configuration of the wafer processing section including the expansion section or the polishing section, it is preferred that the wafer cooling section and the wafer heating section as the expansion section of the wafer processing section are arranged in a direction orthogonal to the direction in which the wafer handling section, the cutting section and the wafer processing section are arranged. If so configured, when the wafer moves to the cutting section and the wafer processing section, it is possible to prevent the components of the wafer heating section from interfering with the moving wafer.
該情形時,較佳為:擴展部包含晶圓移動部,該晶圓移動部保持晶圓,並使晶圓於晶圓冷卻部與晶圓加熱部之間移動。若如此構成,則能容易地使已被搬送至擴展部之晶圓於擴展部內藉由晶圓移動部獨立地於晶圓冷卻部與晶圓加熱部之間移動。In this case, it is preferred that the expansion section includes a wafer moving section that holds the wafer and moves the wafer between the wafer cooling section and the wafer heating section. If so configured, the wafer that has been transported to the expansion section can be easily moved independently between the wafer cooling section and the wafer heating section in the expansion section by the wafer moving section.
擴展部之晶圓冷卻部及晶圓加熱部沿著與上述晶圓取放部、切割部及晶圓加工部排列之方向正交之方向排列而配置之構成中,較佳為:晶圓盒部相對於晶圓取放部而配置於前後方向之一側,於晶圓盒部之前後方向之另一側配置有晶圓取放部,於晶圓取放部之橫側配置有擴展部之晶圓冷卻部,於晶圓冷卻部之前後方向之一側配置有擴展部之晶圓加熱部。若如此構成,則能沿著晶圓之移動路徑,緊湊地配置晶圓盒部、晶圓取放部、擴展部之晶圓冷卻部及晶圓加熱部。In the configuration in which the wafer cooling part and the wafer heating part of the expansion part are arranged in a direction orthogonal to the direction in which the wafer handling part, the cutting part and the wafer processing part are arranged, it is preferred that: the wafer box part is arranged on one side of the front-back direction relative to the wafer handling part, the wafer handling part is arranged on the other side of the front-back direction of the wafer box part, the wafer cooling part of the expansion part is arranged on the lateral side of the wafer handling part, and the wafer heating part of the expansion part is arranged on one side of the front-back direction of the wafer cooling part. If configured in this way, the wafer box part, the wafer handling part, the wafer cooling part and the wafer heating part of the expansion part can be compactly arranged along the moving path of the wafer.
上述晶圓盒部相對於晶圓取放部而配置於前後方向之一側,於晶圓盒部之前後方向之另一側配置有晶圓取放部,於晶圓取放部之橫側配置有擴展部之晶圓冷卻部,於晶圓冷卻部之前後方向之一側配置有擴展部之晶圓加熱部之構成中,較佳為:晶圓盒部、晶圓取放部、擴展部之晶圓冷卻部及晶圓加熱部呈矩形形狀配置。若如此構成,與將晶圓盒部、晶圓取放部、擴展部之晶圓冷卻部及晶圓加熱部沿著規定方向呈直線狀配置之情形相比,能縮小設置於裝置周圍之維修空間之面積,因此能抑制用以設置晶圓加工裝置之面積增大。The wafer box is arranged on one side of the front-to-back direction relative to the wafer placement part, the wafer placement part is arranged on the other side of the front-to-back direction of the wafer box, the wafer cooling part of the expansion part is arranged on the lateral side of the wafer placement part, and the wafer heating part of the expansion part is arranged on one side of the front-to-back direction of the wafer cooling part. It is preferred that the wafer box, the wafer placement part, the wafer cooling part of the expansion part and the wafer heating part are arranged in a rectangular shape. If so configured, compared with the case where the wafer box, the wafer placement part, the wafer cooling part of the expansion part and the wafer heating part are arranged in a straight line along a specified direction, the area of the maintenance space set up around the device can be reduced, thereby suppressing the increase in the area used to set up the wafer processing device.
上述晶圓盒部相對於晶圓取放部而配置於前後方向之一側,於晶圓盒部之前後方向之另一側配置有晶圓取放部,於晶圓取放部之橫側配置有擴展部之晶圓冷卻部,於晶圓冷卻部之前後方向之一側配置有擴展部之晶圓加熱部之構成中,較佳為:進而具備進行經過分割之晶圓之破裂之施壓部,且施壓部於前後方向上,配置於與晶圓加熱部重疊之位置。若如此構成,與將施壓部設置於與晶圓加熱部不重疊之位置之情形相比,能縮小擴展部之前後方向之大小。The wafer box is arranged on one side of the wafer placement part in the front-to-back direction, the wafer placement part is arranged on the other side of the wafer box in the front-to-back direction, the wafer cooling part with an expansion part is arranged on the lateral side of the wafer placement part, and the wafer heating part with an expansion part is arranged on one side of the wafer cooling part in the front-to-back direction. It is preferred that a pressure-applying part for breaking the divided wafer is further provided, and the pressure-applying part is arranged at a position overlapping with the wafer heating part in the front-to-back direction. If so, the size of the expansion part in the front-to-back direction can be reduced compared with the case where the pressure-applying part is arranged at a position not overlapping with the wafer heating part.
上述晶圓盒部相對於晶圓取放部而配置於前後方向之一側,於晶圓盒部之前後方向之另一側配置有晶圓取放部,於晶圓取放部之橫側配置有擴展部之晶圓冷卻部,於晶圓冷卻部之前後方向之一側配置有擴展部之晶圓加熱部之構成中,較佳為:進而具備進行經過分割之晶圓之破裂之施壓部,且施壓部於前後方向上,配置於晶圓冷卻部與晶圓加熱部之間。若如此構成,則於晶圓冷卻部中冷卻晶圓後,能一面使晶圓依序移動至施壓部及晶圓加熱部,一面依序進行破裂及加熱處理。The wafer box is arranged on one side of the wafer placement part in the front-to-back direction, the wafer placement part is arranged on the other side of the wafer box in the front-to-back direction, a wafer cooling part with an extension part is arranged on the lateral side of the wafer placement part, and a wafer heating part with an extension part is arranged on one side of the wafer cooling part in the front-to-back direction. It is preferred that: a pressure-applying part for breaking the divided wafer is further provided, and the pressure-applying part is arranged between the wafer cooling part and the wafer heating part in the front-to-back direction. If so, after cooling the wafer in the wafer cooling part, the wafer can be moved to the pressure-applying part and the wafer heating part in sequence while being broken and heated in sequence.
上述晶圓盒部相對於晶圓取放部而配置於前後方向之一側,於晶圓盒部之前後方向之另一側配置有晶圓取放部,於晶圓取放部之橫側配置有擴展部之晶圓冷卻部,於晶圓冷卻部之前後方向之一側配置有擴展部之晶圓加熱部之構成中,較佳為:進而具備紫外線照射部,該紫外線照射部對貼附有晶圓之片狀構件照射紫外線,且紫外線照射部於前後方向上,配置於與晶圓加熱部重疊之位置。若如此構成,與將紫外線照射部設置於與晶圓加熱部不重疊之位置之情形相比,能縮小擴展部之前後方向之大小。The wafer box is arranged on one side of the wafer placement part in the front-to-back direction, the wafer placement part is arranged on the other side of the wafer box in the front-to-back direction, the wafer cooling part of the expansion part is arranged on the lateral side of the wafer placement part, and the wafer heating part of the expansion part is arranged on one side of the wafer cooling part in the front-to-back direction. It is preferred that: an ultraviolet irradiation part is further provided, the ultraviolet irradiation part irradiates ultraviolet rays to the sheet member to which the wafer is attached, and the ultraviolet irradiation part is arranged at a position overlapping with the wafer heating part in the front-to-back direction. If so constituted, the size of the expansion part in the front-to-back direction can be reduced compared with the case where the ultraviolet irradiation part is arranged at a position not overlapping with the wafer heating part.
本發明之第2態樣之半導體晶片之製造方法包含如下工序:藉由晶圓取放部自收容晶圓之晶圓盒部取出晶圓,或向晶圓盒部放入晶圓;藉由切割部進行切割,以分割晶圓而形成複數個半導體晶片;及藉由晶圓加工部對晶圓進行與切割不同之加工;且晶圓取放部係以位在切割部與晶圓加工部之間之方式配置。The manufacturing method of the semiconductor chip of the second aspect of the present invention includes the following steps: taking out the wafer from the wafer box part that accommodates the wafer by a wafer handling part, or putting the wafer into the wafer box part; cutting by a cutting part to divide the wafer into a plurality of semiconductor chips; and performing processing on the wafer different from cutting by a wafer processing part; and the wafer handling part is configured in a manner of being located between the cutting part and the wafer processing part.
本發明之第2態樣之半導體晶片之製造方法中,如上所述,晶圓取放部係以位在切割部與晶圓加工部之間之方式配置。藉此,能對切割部及晶圓加工部中之一者,不經由切割部及晶圓加工部中之另一者地自晶圓盒部直接供給晶圓,因此進行一部分加工處理時,能獨立地進行加工處理。其結果,可提供一種即便只進行複數個加工處理中之一部分加工處理時,亦能效率良好地進行晶圓之加工處理之半導體晶片之製造方法。又,連續地進行切割部及晶圓加工部所實施之處理之情形時,藉由使晶圓於切割部與晶圓加工部之間移動,能進行複數個加工處理。In the manufacturing method of the semiconductor chip of the second aspect of the present invention, as described above, the wafer placement part is configured in a manner of being located between the cutting part and the wafer processing part. Thereby, the wafer can be directly supplied from the wafer box part to one of the cutting part and the wafer processing part without passing through the other of the cutting part and the wafer processing part, so that when a part of the processing is performed, the processing can be performed independently. As a result, a manufacturing method of a semiconductor chip can be provided, which can efficiently perform the processing of the wafer even when only a part of the processing is performed among a plurality of processing. In addition, when the processing performed by the cutting part and the wafer processing part is performed continuously, a plurality of processing can be performed by moving the wafer between the cutting part and the wafer processing part.
本發明之第3態樣之半導體晶片係由晶圓加工裝置製造而成,上述晶圓加工裝置具備:晶圓盒部,其收容晶圓;晶圓取放部,其自晶圓盒部取出晶圓,或向晶圓盒部放入晶圓;切割部,其切割晶圓;及晶圓加工部,其對晶圓進行與切割不同之加工;且晶圓取放部係以位在切割部與晶圓加工部之間之方式配置。The semiconductor chip of the third aspect of the present invention is manufactured by a wafer processing device, which includes: a wafer box part, which accommodates wafers; a wafer placement part, which takes out wafers from the wafer box part or puts wafers into the wafer box part; a cutting part, which cuts wafers; and a wafer processing part, which performs processing on the wafer that is different from cutting; and the wafer placement part is configured in a manner of being located between the cutting part and the wafer processing part.
本發明之第3態樣之半導體晶片中,如上所述,晶圓取放部係以位在切割部與晶圓加工部之間之方式配置。藉此,能對切割部及晶圓加工部中之一者,不經由切割部及晶圓加工部中之另一者地自晶圓盒部直接供給晶圓,因此進行一部分加工處理時,能獨立地進行加工處理。其結果,可提供一種即便只進行複數個加工處理中之一部分加工處理時,亦能效率良好地進行晶圓之加工處理之半導體晶片。又,連續地進行切割部及晶圓加工部所實施之處理之情形時,藉由使晶圓於切割部與晶圓加工部之間移動,能進行複數個加工處理。In the semiconductor chip of the third aspect of the present invention, as described above, the wafer placement section is configured in a manner of being located between the cutting section and the wafer processing section. Thereby, the wafer can be directly supplied from the wafer box section to one of the cutting section and the wafer processing section without passing through the other of the cutting section and the wafer processing section, so that when a part of the processing is performed, the processing can be performed independently. As a result, a semiconductor chip can be provided that can efficiently perform the processing of the wafer even when only a part of the processing is performed among a plurality of processings. In addition, when the processing performed by the cutting section and the wafer processing section is performed continuously, a plurality of processings can be performed by moving the wafer between the cutting section and the wafer processing section.
以下,基於圖式對將本發明具體化之實施方式進行說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[第1實施方式] 參照圖1~圖14,對本發明之第1實施方式的半導體晶圓之加工裝置100之構成進行說明。再者,半導體晶圓之加工裝置100係申請專利範圍中之「晶圓加工裝置」之一例。 [First embodiment] Referring to FIGS. 1 to 14 , the structure of the semiconductor wafer processing device 100 of the first embodiment of the present invention is described. The semiconductor wafer processing device 100 is an example of a "wafer processing device" within the scope of the patent application.
(半導體晶圓之加工裝置) 如圖1所示,半導體晶圓之加工裝置100係對設置於晶圓環構造體W之晶圓W1進行加工之裝置。半導體晶圓之加工裝置100係以於晶圓W1形成改質層,並且將晶圓W1沿著改質層分割而形成複數個半導體晶片Ch(參照圖8)之方式構成。 (Semiconductor wafer processing device) As shown in FIG. 1 , the semiconductor wafer processing device 100 is a device for processing a wafer W1 disposed in a wafer ring structure W. The semiconductor wafer processing device 100 is configured to form a modified layer on the wafer W1 and to divide the wafer W1 along the modified layer to form a plurality of semiconductor chips Ch (see FIG. 8 ).
此處,參照圖2及圖3對晶圓環構造體W進行說明。晶圓環構造體W具有晶圓W1、片狀構件W2及環狀構件W3。Here, the wafer ring structure W is described with reference to Fig. 2 and Fig. 3. The wafer ring structure W includes a wafer W1, a sheet member W2, and a ring member W3.
晶圓W1係由作為半導體積體電路之材料之半導體物質之晶體形成的圓形薄板。於晶圓W1之內部,藉由在半導體晶圓之加工裝置100中之加工,沿著分割線形成使內部改質所得之改質層。即,晶圓W1將被加工成可沿著分割線加以分割。片狀構件W2係具有伸縮性之黏著帶。於片狀構件W2之上表面W21設置有黏著層。於片狀構件W2之黏著層貼附有晶圓W1。環狀構件W3係俯視下呈環狀之金屬製之框架。環狀構件W3以包圍晶圓W1之狀態貼附於片狀構件W2之黏著層。Wafer W1 is a circular thin plate formed by crystals of a semiconductor substance that is a material for a semiconductor integrated circuit. Inside the wafer W1, a modified layer is formed along a dividing line by processing in a semiconductor wafer processing device 100 to modify the inside. That is, wafer W1 will be processed so that it can be divided along the dividing line. The sheet member W2 is an adhesive tape with stretchability. An adhesive layer is provided on the upper surface W21 of the sheet member W2. Wafer W1 is attached to the adhesive layer of the sheet member W2. The annular member W3 is a metal frame that is annular in a plan view. The annular member W3 is attached to the adhesive layer of the sheet member W2 in a state of surrounding the wafer W1.
又,半導體晶圓之加工裝置100具備切割裝置1及擴展裝置2。以下,將上下方向設為Z方向,將上方向設為Z1方向,並且將下方向設為Z2方向。將與Z方向正交之水平方向中之切割裝置1與擴展裝置2排列之方向設為X方向,將X方向中之擴展裝置2側設為X1方向,將X方向中之切割裝置1側設為X2方向。將水平方向中之與X方向正交之方向設為Y方向,將Y方向中之一側設為Y1方向,將Y方向中之另一側設為Y2方向。Furthermore, the semiconductor wafer processing device 100 includes a cutting device 1 and an expanding device 2. Hereinafter, the up-down direction is set as the Z direction, the up direction is set as the Z1 direction, and the down direction is set as the Z2 direction. The direction in which the cutting device 1 and the expanding device 2 are arranged in the horizontal direction orthogonal to the Z direction is set as the X direction, the expanding device 2 side in the X direction is set as the X1 direction, and the cutting device 1 side in the X direction is set as the X2 direction. The direction in the horizontal direction orthogonal to the X direction is set as the Y direction, one side in the Y direction is set as the Y1 direction, and the other side in the Y direction is set as the Y2 direction.
(切割裝置) 如圖1、圖4及圖5所示,切割裝置1係以藉由沿著分割線(切割道)對晶圓W1照射具有透過性之波長之雷射,而形成改質層之方式構成。所謂改質層,表示藉由雷射而形成於晶圓W1之內部之龜裂及孔隙等。再者,切割裝置1係申請專利範圍中之「切割部」之一例。 (Cutting device) As shown in FIG. 1, FIG. 4 and FIG. 5, the cutting device 1 is configured to form a modified layer by irradiating a laser having a wavelength having transparency to the wafer W1 along the dividing line (cutting road). The so-called modified layer refers to cracks and pores formed inside the wafer W1 by the laser. Furthermore, the cutting device 1 is an example of a "cutting part" in the scope of the patent application.
具體而言,切割裝置1包含基底11、卡盤工作台部12、雷射部13及攝像部14。Specifically, the cutting device 1 includes a base 11 , a chuck table portion 12 , a laser portion 13 and an imaging portion 14 .
基底11係供設置卡盤工作台部12之基台。基底11俯視下具有矩形形狀。The base 11 is a base for installing the chuck worktable 12. The base 11 has a rectangular shape in a top view.
<卡盤工作台部> 卡盤工作台部12具有吸附部12a、夾持部12b、旋動機構12c及工作台移動機構12d。吸附部12a係以將晶圓環構造體W吸附於Z1方向側之上表面之方式構成。吸附部12a係設置有抽吸孔及抽吸管路等,以吸附晶圓環構造體W之環狀構件W3之Z2方向側之下表面的工作台。吸附部12a經由旋動機構12c支持於工作台移動機構12d。夾持部12b設置於吸附部12a之上端部。夾持部12b係以壓住被吸附部12a吸附之晶圓環構造體W之方式構成。夾持部12b自Z1方向側壓住被吸附部12a吸附之晶圓環構造體W之環狀構件W3。如此,晶圓環構造體W由吸附部12a及夾持部12b固持。 <Chuck worktable> The chuck worktable 12 has an adsorption portion 12a, a clamping portion 12b, a rotating mechanism 12c, and a worktable moving mechanism 12d. The adsorption portion 12a is configured to adsorb the wafer ring structure W on the upper surface on the Z1 direction side. The adsorption portion 12a is a worktable provided with suction holes and suction pipes, etc., to adsorb the lower surface of the annular component W3 of the wafer ring structure W on the Z2 direction side. The adsorption portion 12a is supported on the worktable moving mechanism 12d via the rotating mechanism 12c. The clamping portion 12b is provided at the upper end of the adsorption portion 12a. The clamping portion 12b is configured to press the wafer ring structure W adsorbed by the adsorption portion 12a. The clamping part 12b presses the annular component W3 of the wafer ring structure W adsorbed by the adsorption part 12a from the Z1 direction. In this way, the wafer ring structure W is held by the adsorption part 12a and the clamping part 12b.
旋動機構12c係以使吸附部12a於環繞與Z方向平行地延伸之旋動中心軸線C之圓周方向上旋動之方式構成。旋動機構12c安裝於工作台移動機構12d之上端部。工作台移動機構12d係以使晶圓環構造體W於X方向及Y方向上移動之方式構成。工作台移動機構12d具有X方向移動機構121及Y方向移動機構122。X方向移動機構121係以使旋動機構12c於X1方向或X2方向上移動之方式構成。X方向移動機構121例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。Y方向移動機構122係以使旋動機構12c於Y1方向或Y2方向上移動之方式構成。Y方向移動機構122例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。The rotating mechanism 12c is configured to rotate the adsorption portion 12a in a circumferential direction around a rotation center axis C extending parallel to the Z direction. The rotating mechanism 12c is mounted on the upper end of the worktable moving mechanism 12d. The worktable moving mechanism 12d is configured to move the wafer ring structure W in the X direction and the Y direction. The worktable moving mechanism 12d has an X-direction moving mechanism 121 and a Y-direction moving mechanism 122. The X-direction moving mechanism 121 is configured to move the rotating mechanism 12c in the X1 direction or the X2 direction. The X-direction moving mechanism 121 includes, for example, a driving portion having a linear conveyor module, or a motor with a ball screw and an encoder. The Y-direction moving mechanism 122 is configured to move the rotating mechanism 12c in the Y1 direction or the Y2 direction. The Y-direction moving mechanism 122 includes, for example, a driving portion having a linear conveyor module or a motor with a ball screw and an encoder.
<雷射部> 雷射部13係以對固持於卡盤工作台部12之晶圓環構造體W之晶圓W1照射雷射光之方式構成。雷射部13配置於卡盤工作台部12之Z1方向側。雷射部13具有雷射照射部13a、安裝構件13b及Z方向移動機構13c。雷射照射部13a係以照射脈衝雷射光之方式構成。安裝構件13b係供安裝雷射部13及攝像部14之框架。Z方向移動機構13c係以使雷射部13於Z1方向或Z2方向上移動之方式構成。Z方向移動機構13c例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。再者,雷射照射部13a只要能形成藉由多光子吸收而實現之改質層,亦可為將除了脈衝雷射光以外之連續波雷射光作為雷射光進行振盪之雷射照射部。 <Laser section> The laser section 13 is configured to irradiate laser light to the wafer W1 of the wafer ring structure W held on the chuck table section 12. The laser section 13 is arranged on the Z1 direction side of the chuck table section 12. The laser section 13 has a laser irradiation section 13a, a mounting member 13b, and a Z-direction moving mechanism 13c. The laser irradiation section 13a is configured to irradiate pulsed laser light. The mounting member 13b is a frame for mounting the laser section 13 and the camera section 14. The Z-direction moving mechanism 13c is configured to move the laser section 13 in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 13c includes, for example, a driving section having a linear conveyor module or a motor with a ball screw and an encoder. Furthermore, the laser irradiation section 13a may also be a laser irradiation section that oscillates continuous wave laser light other than pulse laser light as laser light, as long as it can form a modified layer realized by multiphoton absorption.
<攝像部> 攝像部14係以拍攝固持於卡盤工作台部12之晶圓環構造體W之晶圓W1之方式構成。攝像部14配置於卡盤工作台部12之Z1方向側。攝像部14具有高解析度相機14a、廣角相機14b、Z方向移動機構14c及Z方向移動機構14d。 <Image capture unit> The image capture unit 14 is configured to capture the wafer W1 of the wafer ring structure W held on the chuck table 12. The image capture unit 14 is disposed on the Z1 direction side of the chuck table 12. The image capture unit 14 has a high-resolution camera 14a, a wide-angle camera 14b, a Z-direction moving mechanism 14c, and a Z-direction moving mechanism 14d.
高解析度相機14a及廣角相機14b為近紅外線攝像用相機。高解析度相機14a之視野角較廣角相機14b窄。高解析度相機14a之解析度較廣角相機14b高。廣角相機14b之視野角較高解析度相機14a寬。廣角相機14b之解析度較高解析度相機14a低。高解析度相機14a配置於雷射照射部13a之X1方向側。廣角相機14b配置於雷射照射部13a之X2方向側。如此,高解析度相機14a、雷射照射部13a及廣角相機14b自X1方向側向X2方向側依序鄰接而配置。The high-resolution camera 14a and the wide-angle camera 14b are cameras for near-infrared photography. The field of view of the high-resolution camera 14a is narrower than that of the wide-angle camera 14b. The resolution of the high-resolution camera 14a is higher than that of the wide-angle camera 14b. The field of view of the wide-angle camera 14b is wider than that of the high-resolution camera 14a. The resolution of the wide-angle camera 14b is lower than that of the high-resolution camera 14a. The high-resolution camera 14a is arranged on the X1 direction side of the laser irradiation section 13a. The wide-angle camera 14b is arranged on the X2 direction side of the laser irradiation section 13a. In this way, the high-resolution camera 14a, the laser irradiation section 13a, and the wide-angle camera 14b are arranged adjacent to each other in sequence from the X1 direction side to the X2 direction side.
Z方向移動機構14c係以使高解析度相機14a於Z1方向或Z2方向上移動之方式構成。Z方向移動機構14c例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。Z方向移動機構14d係以使廣角相機14b於Z1方向或Z2方向上移動之方式構成。Z方向移動機構14d例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。The Z-direction moving mechanism 14c is configured to move the high-resolution camera 14a in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 14c includes, for example, a linear conveyor module or a driving part of a motor with a ball screw and an encoder. The Z-direction moving mechanism 14d is configured to move the wide-angle camera 14b in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 14d includes, for example, a linear conveyor module or a driving part of a motor with a ball screw and an encoder.
(擴展裝置) 如圖1、圖6及圖7所示,擴展裝置2係以將晶圓W1分割而形成複數個半導體晶片Ch(參照圖8)之方式構成。又,擴展裝置2係以使複數個半導體晶片Ch彼此之間形成充足之間隙之方式構成。此處,於晶圓W1,藉由在切割裝置1中沿著分割線(切割道)對晶圓W1照射具有透過性之波長之雷射,而形成有改質層。擴展裝置2中,藉由沿著於切割裝置1中已預先形成之改質層分割晶圓W1,而形成複數個半導體晶片Ch。 (Expansion device) As shown in FIG. 1, FIG. 6 and FIG. 7, the expansion device 2 is configured to divide the wafer W1 to form a plurality of semiconductor chips Ch (see FIG. 8). Furthermore, the expansion device 2 is configured to form a sufficient gap between the plurality of semiconductor chips Ch. Here, a modified layer is formed on the wafer W1 by irradiating the wafer W1 with a laser having a wavelength having a transmittance along the dividing line (cutting road) in the cutting device 1. In the expansion device 2, a plurality of semiconductor chips Ch are formed by dividing the wafer W1 along the modified layer that has been pre-formed in the cutting device 1.
從而,擴展裝置2中,藉由使片狀構件W2擴展,會沿著改質層分割晶圓W1。又,擴展裝置2中,藉由使片狀構件W2擴展,會使分割而形成之複數個半導體晶片Ch彼此之間隙擴大。Therefore, in the expansion device 2, the wafer W1 is divided along the reformed layer by expanding the sheet member W2. Also, in the expansion device 2, the gap between the plurality of semiconductor chips Ch formed by division is enlarged by expanding the sheet member W2.
擴展裝置2包含擴展本體部200、基底201、晶圓盒部202、提昇手部203、吸附手部204、基底205、冷氣供給部206、冷卻單元207、擴展部208、基底209、擴張維持構件210、熱收縮部211、紫外線照射部212、施壓部213及夾持部214。擴展本體部200進行拉伸配置有晶圓W1之片狀構件W2而分割晶圓W1之處理。再者,擴展本體部200係申請專利範圍中之「晶圓加工部」及「擴展部」之一例。The expansion device 2 includes an expansion body 200, a base 201, a wafer box 202, a lifting hand 203, a suction hand 204, a base 205, a cold air supply part 206, a cooling unit 207, an expansion part 208, a base 209, an expansion holding member 210, a heat shrinking part 211, an ultraviolet irradiation part 212, a pressure applying part 213 and a clamping part 214. The expansion body 200 performs a process of stretching a sheet member W2 on which a wafer W1 is arranged to split the wafer W1. Furthermore, the expansion body 200 is an example of a "wafer processing part" and an "expansion part" in the scope of the patent application.
<基底> 基底201係供設置晶圓盒部202及提昇手部203之基台。基底201俯視下具有矩形形狀。 <Base> The base 201 is a base for installing the wafer box part 202 and the lifting hand part 203. The base 201 has a rectangular shape when viewed from above.
<晶圓盒部> 晶圓盒部202收容晶圓W1(晶圓環構造體W)。晶圓盒部202係以可收容複數個晶圓環構造體W之方式構成。晶圓盒部202包含晶圓盒202a、Z方向移動機構202b及一對載置部202c。 <Wafer box section> The wafer box section 202 accommodates the wafer W1 (wafer ring structure W). The wafer box section 202 is configured to accommodate a plurality of wafer ring structures W. The wafer box section 202 includes a wafer box 202a, a Z-direction moving mechanism 202b, and a pair of loading sections 202c.
晶圓盒202a於Z方向上配置有複數個(3個)。晶圓盒202a具有可收容複數個(5個)晶圓環構造體W之收容空間。晶圓環構造體W以手動作業方式供給及載置於晶圓盒202a。再者,晶圓盒202a亦可收容1~4個晶圓環構造體W,或收容6個以上晶圓環構造體W。又,晶圓盒202a亦可於Z方向上配置有1、2或4個以上。There are multiple (3) wafer boxes 202a arranged in the Z direction. The wafer box 202a has a storage space that can accommodate multiple (5) wafer ring structures W. The wafer ring structure W is supplied and placed on the wafer box 202a manually. Furthermore, the wafer box 202a can also accommodate 1 to 4 wafer ring structures W, or more than 6 wafer ring structures W. In addition, the wafer box 202a can also be arranged in the Z direction with 1, 2 or more than 4.
Z方向移動機構202b係以使晶圓盒202a於Z1方向或Z2方向上移動之方式構成。Z方向移動機構202b例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。又,Z方向移動機構202b具有自下側支持晶圓盒202a之載置台202d。載置台202d根據複數個晶圓盒202a之位置而配置有複數個(3個)。The Z-direction moving mechanism 202b is configured to move the wafer box 202a in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 202b includes, for example, a driving unit having a linear conveyor module or a motor with a ball screw and an encoder. In addition, the Z-direction moving mechanism 202b has a mounting table 202d that supports the wafer box 202a from the bottom. The mounting table 202d is configured in plurality (3) according to the positions of the plurality of wafer boxes 202a.
一對載置部202c於晶圓盒202a之內側配置有複數個(5個)。晶圓環構造體W之環狀構件W3自Z1方向側載置於一對載置部202c。一對載置部202c中之一者自晶圓盒202a之X1方向側之內側面向X2方向側突出。一對載置部202c中之另一者自晶圓盒202a之X2方向側之內側面向X1方向側突出。A plurality of (5) pairs of loading parts 202c are arranged inside the wafer box 202a. The annular member W3 of the wafer ring structure W is loaded on the pair of loading parts 202c from the Z1 direction side. One of the pair of loading parts 202c protrudes from the inner side surface of the X1 direction side of the wafer box 202a to the X2 direction side. The other of the pair of loading parts 202c protrudes from the inner side surface of the X2 direction side of the wafer box 202a to the X1 direction side.
<提昇手部> 提昇手部203自晶圓盒部202取出晶圓W1(晶圓環構造體W),或向晶圓盒部202放入晶圓W1(晶圓環構造體W)。提昇手部203係以可自晶圓盒部202取出晶圓環構造體W之方式構成。又,提昇手部203係以可將晶圓環構造體W收容至晶圓盒部202之方式構成。再者,提昇手部203係申請專利範圍中之「晶圓取放部」之一例。 <Lifting Hand> The lifting hand 203 takes out the wafer W1 (wafer ring structure W) from the wafer box 202, or puts the wafer W1 (wafer ring structure W) into the wafer box 202. The lifting hand 203 is configured to take out the wafer ring structure W from the wafer box 202. In addition, the lifting hand 203 is configured to accommodate the wafer ring structure W in the wafer box 202. Furthermore, the lifting hand 203 is an example of a "wafer pick-up and placement unit" in the scope of the patent application.
具體而言,提昇手部203包含Y方向移動機構203a及提昇手203b。Y方向移動機構203a例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。提昇手203b係以自Z2方向側支持晶圓環構造體W之環狀構件W3之方式構成。Specifically, the lifting hand 203 includes a Y-direction moving mechanism 203a and a lifting hand 203b. The Y-direction moving mechanism 203a includes, for example, a driving part having a linear conveyor module or a motor with a ball screw and an encoder. The lifting hand 203b is configured to support the annular member W3 of the wafer ring structure W from the Z2 direction side.
<吸附手部> 吸附手部204係以自Z1方向側吸附晶圓環構造體W之環狀構件W3之方式構成。再者,吸附手部204係申請專利範圍中之「晶圓搬送部」之一例。 <Suction Hand> The suction hand 204 is configured to suction the annular member W3 of the wafer ring structure W from the Z1 direction side. Furthermore, the suction hand 204 is an example of a "wafer transfer unit" in the scope of the patent application.
吸附手部204自提昇手部203接收晶圓W1(晶圓環構造體W),並將晶圓W1搬送至擴展本體部200。具體而言,吸附手部204包含X方向移動機構204a、Z方向移動機構204b及吸附手204c。X方向移動機構204a係以使吸附手204c於X方向上移動之方式構成。Z方向移動機構204b係以使吸附手204c於Z方向上移動之方式構成。X方向移動機構204a及Z方向移動機構204b例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。吸附手204c係以自Z1方向側吸附晶圓環構造體W之環狀構件W3而加以支持之方式構成。此處,吸附手204c中,藉由產生負壓,而支持晶圓環構造體W之環狀構件W3。The suction hand 204 receives the wafer W1 (wafer ring structure W) from the lifting hand 203 and transports the wafer W1 to the extended main body 200. Specifically, the suction hand 204 includes an X-direction moving mechanism 204a, a Z-direction moving mechanism 204b, and a suction hand 204c. The X-direction moving mechanism 204a is configured to move the suction hand 204c in the X-direction. The Z-direction moving mechanism 204b is configured to move the suction hand 204c in the Z-direction. The X-direction moving mechanism 204a and the Z-direction moving mechanism 204b, for example, include a driving part having a linear conveyor module or a motor with a ball screw and an encoder. The suction hand 204c is configured to suck and support the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side. Here, the suction hand 204c supports the ring-shaped member W3 of the wafer ring structure W by generating a negative pressure.
<基底> 如圖7及圖8所示,基底205係供設置擴展本體部200、擴展部208、冷卻單元207、紫外線照射部212及施壓部213之基台。基底205俯視下具有矩形形狀。再者,圖8中以虛線表示配置於冷卻單元207之Z1方向之位置之夾持部214。 <Base> As shown in FIG. 7 and FIG. 8 , the base 205 is a base for installing the expansion body 200, the expansion part 208, the cooling unit 207, the ultraviolet irradiation part 212, and the pressure applying part 213. The base 205 has a rectangular shape when viewed from above. In FIG. 8 , the clamping part 214 disposed at the position of the cooling unit 207 in the Z1 direction is indicated by a dotted line.
<冷氣供給部> 冷氣供給部206係以於藉由擴展部208使片狀構件W2擴展時,自Z1方向側向片狀構件W2供給冷氣之方式構成。 <Cold air supply section> The cold air supply section 206 is configured to supply cold air to the sheet member W2 from the Z1 direction when the sheet member W2 is expanded by the expansion section 208.
具體而言,冷氣供給部206具有供給部本體206a、冷氣供給口206b及移動機構206c。冷氣供給口206b係以使自冷氣供給裝置供給之冷氣流出之方式構成。冷氣供給口206b設置於供給部本體206a之Z2方向側之端部。冷氣供給口206b配置於供給部本體206a之Z2方向側之端部之中央部。移動機構206c例如具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達。Specifically, the cold air supply unit 206 has a supply unit body 206a, a cold air supply port 206b, and a moving mechanism 206c. The cold air supply port 206b is configured so that the cold air supplied from the cold air supply device flows out. The cold air supply port 206b is provided at the end of the supply unit body 206a on the Z2 direction side. The cold air supply port 206b is arranged at the center of the end of the supply unit body 206a on the Z2 direction side. The moving mechanism 206c has, for example, a linear conveyor module, or a motor with a ball screw and an encoder.
冷氣供給裝置係用以產生冷氣之裝置。冷氣供給裝置例如供給經熱泵等加以冷卻後之空氣。此種冷氣供給裝置設置於基底205。冷氣供給部206與冷卻供給裝置藉由軟管(未圖示)而連接。The cold air supply device is a device for generating cold air. The cold air supply device supplies air cooled by a heat pump, for example. Such a cold air supply device is installed on the base 205. The cold air supply part 206 is connected to the cold air supply device by a hose (not shown).
<冷卻單元> 冷卻單元207係以自Z2方向側冷卻片狀構件W2之方式構成。再者,冷卻單元207係申請專利範圍中之「晶圓冷卻部」之一例。 <Cooling unit> The cooling unit 207 is configured to cool the sheet-shaped member W2 from the Z2 direction. Furthermore, the cooling unit 207 is an example of a "wafer cooling unit" in the scope of the patent application.
冷卻單元207設置於擴展本體部200之晶圓冷卻位置P4。又,晶圓冷卻位置P4位於擴展本體部200之Y2方向側。冷卻單元207包含具有冷卻體271及珀爾帖元件272之冷卻構件207a、Z方向移動機構207b。冷卻體271由熱容量大且熱導率高之構件構成。冷卻體271由鋁等金屬形成。珀爾帖元件272係以使冷卻體271冷卻之方式構成。再者,冷卻體271並不限定於鋁,亦可為其他熱容量大且熱導率高之構件。Z方向移動機構207b為汽缸。The cooling unit 207 is disposed at the wafer cooling position P4 of the extended body 200. Furthermore, the wafer cooling position P4 is located on the Y2 direction side of the extended body 200. The cooling unit 207 includes a cooling member 207a having a cooling body 271 and a Peltier element 272, and a Z-direction moving mechanism 207b. The cooling body 271 is composed of a member having a large heat capacity and a high thermal conductivity. The cooling body 271 is formed of a metal such as aluminum. The Peltier element 272 is configured in a manner to cool the cooling body 271. Furthermore, the cooling body 271 is not limited to aluminum, and may also be other members having a large heat capacity and a high thermal conductivity. The Z-direction moving mechanism 207b is a cylinder.
冷卻單元207係以可藉由Z方向移動機構207b於Z1方向或Z2方向上移動之方式構成。藉此,冷卻單元207可移動至與片狀構件W2接觸之位置、及與片狀構件W2分隔之位置。The cooling unit 207 is configured to be movable in the Z1 direction or the Z2 direction by the Z-direction moving mechanism 207b. Thus, the cooling unit 207 can be moved to a position in contact with the sheet member W2 or a position separated from the sheet member W2.
<擴展部> 擴展部208係以藉由擴展晶圓環構造體W之片狀構件W2,而沿著分割線分割晶圓W1之方式構成。 <Expanding section> The expanding section 208 is formed by expanding the sheet-shaped member W2 of the wafer ring structure W to divide the wafer W1 along the dividing line.
擴展部208設置於擴展本體部200之晶圓加熱位置P5。又,晶圓加熱位置P5位於擴展本體部200之Y1方向側。擴展部208具有擴展環281。擴展環281係以藉由自Z2方向側支持片狀構件W2,而使片狀構件W2擴展(擴張)之方式構成。擴展環281俯視下具有環狀形狀。再者,關於擴展環281之構造,將於後文詳細地進行說明。The expansion section 208 is disposed at the wafer heating position P5 of the expansion body 200. Furthermore, the wafer heating position P5 is located on the Y1 direction side of the expansion body 200. The expansion section 208 has an expansion ring 281. The expansion ring 281 is configured to expand (expand) the sheet member W2 by supporting the sheet member W2 from the Z2 direction side. The expansion ring 281 has a ring shape when viewed from above. Furthermore, the structure of the expansion ring 281 will be described in detail later.
<基底> 基底209係供設置冷氣供給部206、擴張維持構件210及熱收縮部211之基材。 <Base> The base 209 is a base material for installing the cooling air supply unit 206, the expansion and maintenance member 210 and the heat shrinking unit 211.
<擴張維持構件> 如圖7及圖8所示,擴張維持構件210係以自Z1方向側壓住片狀構件W2,避免晶圓W1附近之片狀構件W2因加熱環211a所實施之加熱而發生收縮之方式構成。 <Expansion maintaining member> As shown in FIG. 7 and FIG. 8, the expansion maintaining member 210 is configured to press the sheet member W2 from the Z1 direction to prevent the sheet member W2 near the wafer W1 from shrinking due to the heating performed by the heating ring 211a.
具體而言,擴張維持構件210具有擠壓環部210a、蓋部210b及吸氣部210c。擠壓環部210a俯視下具有環狀形狀。蓋部210b以堵住擠壓環部210a之開口之方式設置於擠壓環部210a。吸氣部210c係俯視下具有環狀形狀之吸氣環。於吸氣部210c之Z2方向側之下表面形成有複數個吸氣口。又,擠壓環部210a係以藉由Z方向移動機構210d於Z方向上移動之方式構成。即,Z方向移動機構210d係以使擠壓環部210a向壓住片狀構件W2之位置、及離開片狀構件W2之位置移動之方式構成。Z方向移動機構210d例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。Specifically, the expansion maintaining member 210 has an extrusion ring portion 210a, a cover portion 210b and an air suction portion 210c. The extrusion ring portion 210a has an annular shape when viewed from above. The cover portion 210b is provided on the extrusion ring portion 210a in a manner to block the opening of the extrusion ring portion 210a. The air suction portion 210c is an air suction ring having an annular shape when viewed from above. A plurality of air suction ports are formed on the lower surface of the Z2 direction side of the air suction portion 210c. In addition, the extrusion ring portion 210a is configured to move in the Z direction by a Z direction moving mechanism 210d. That is, the Z-direction moving mechanism 210d is configured to move the extrusion ring 210a to a position pressing the sheet member W2 and to a position away from the sheet member W2. The Z-direction moving mechanism 210d includes, for example, a driving part having a linear conveyor module or a motor with a ball screw and an encoder.
<熱收縮部> 熱收縮部211係以使藉由擴展部208而擴展後之片狀構件W2以保持著複數個半導體晶片Ch彼此之間之間隙之狀態藉由加熱而收縮之方式構成。再者,熱收縮部211係申請專利範圍中之「晶圓加熱部」之一例。 <Heat shrinkage section> The heat shrinkage section 211 is configured so that the sheet member W2 expanded by the expansion section 208 is shrunk by heating while maintaining the gaps between the plurality of semiconductor chips Ch. The heat shrinkage section 211 is an example of a "wafer heating section" in the scope of the patent application.
熱收縮部211設置於擴展本體部200之晶圓加熱位置P5。熱收縮部211具有加熱環211a及Z方向移動機構211b。加熱環211a俯視下具有環狀形狀。又,加熱環211a具有加熱片狀構件W2之封裝加熱器。Z方向移動機構211b係以使加熱環211a於Z方向上移動之方式構成。Z方向移動機構211b例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。The heat shrinking part 211 is disposed at the wafer heating position P5 of the extended main body 200. The heat shrinking part 211 has a heating ring 211a and a Z-direction moving mechanism 211b. The heating ring 211a has a ring shape when viewed from above. In addition, the heating ring 211a has a packaged heater for heating the sheet member W2. The Z-direction moving mechanism 211b is configured to move the heating ring 211a in the Z direction. The Z-direction moving mechanism 211b includes, for example, a driving part having a linear conveyor module or a motor with a ball screw and an encoder.
<紫外線照射部> 紫外線照射部212係以對片狀構件W2照射紫外線Ut,以使片狀構件W2之黏著層之黏著力降低之方式構成。具體而言,紫外線照射部212具有紫外線用照明。紫外線照射部212配置於施壓部213之下述擠壓部213a之Z1方向側之端部。紫外線照射部212係以一面與施壓部213一併移動,一面對片狀構件W2照射紫外線Ut之方式構成。 <Ultraviolet irradiation section> The ultraviolet irradiation section 212 is configured to irradiate ultraviolet rays Ut to the sheet member W2 to reduce the adhesive force of the adhesive layer of the sheet member W2. Specifically, the ultraviolet irradiation section 212 has ultraviolet lighting. The ultraviolet irradiation section 212 is arranged at the end of the Z1 direction side of the extrusion section 213a described below of the pressure-applying section 213. The ultraviolet irradiation section 212 is configured to irradiate ultraviolet rays Ut to the sheet member W2 while moving together with the pressure-applying section 213.
<施壓部> 施壓部213係以於使片狀構件W2擴展後,自Z2方向側局部擠壓晶圓W1,藉此沿著改質層進而分割晶圓W1之方式構成。即,施壓部213進行經過分割之晶圓W1之破裂。具體而言,施壓部213具有擠壓部213a、Z方向移動機構213b、X方向移動機構213c及旋動機構213d。 <Pressure-applying section> The pressure-applying section 213 is configured to partially squeeze the wafer W1 from the Z2 direction side after expanding the sheet-like member W2, thereby dividing the wafer W1 along the modified layer. That is, the pressure-applying section 213 breaks the divided wafer W1. Specifically, the pressure-applying section 213 has a squeezing section 213a, a Z-direction moving mechanism 213b, an X-direction moving mechanism 213c, and a rotating mechanism 213d.
擠壓部213a係以經由片狀構件W2自Z2方向側擠壓晶圓W1,同時藉由旋動機構213d及X方向移動機構213c移動,藉此使晶圓W1產生彎曲應力而沿著改質層分割晶圓W1之方式構成。擠壓部213a藉由Z方向移動機構213b向Z1方向側之上升位置上升,藉此經由片狀構件W2抵接於晶圓W1,從而擠壓晶圓W1。擠壓部213a藉由Z方向移動機構213b向Z2方向側之下降位置下降,藉此解除與晶圓W1之抵接,從而不再擠壓晶圓W1。擠壓部213a為施壓器。The squeezing part 213a is constructed in such a way that the wafer W1 is squeezed from the Z2 direction side through the sheet-like component W2, and at the same time, it is moved through the rotating mechanism 213d and the X-direction moving mechanism 213c, thereby generating bending stress on the wafer W1 and dividing the wafer W1 along the modified layer. The squeezing part 213a is raised to the rising position on the Z1 direction side through the Z-direction moving mechanism 213b, thereby abutting against the wafer W1 through the sheet-like component W2, thereby squeezing the wafer W1. The squeezing part 213a is lowered to the lowering position on the Z2 direction side through the Z-direction moving mechanism 213b, thereby releasing the abutment with the wafer W1, and thus no longer squeezing the wafer W1. The extruding portion 213a is a pressure applicator.
擠壓部213a安裝於Z方向移動機構213b之Z1方向側之端部。Z方向移動機構213b係以使擠壓部213a於Z1方向或Z2方向上直線移動之方式構成。Z方向移動機構213b例如為汽缸。Z方向移動機構213b安裝於X方向移動機構213c之Z1方向側之端部。The extrusion part 213a is mounted on the end of the Z-direction moving mechanism 213b on the Z1 direction side. The Z-direction moving mechanism 213b is configured so that the extrusion part 213a moves linearly in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 213b is, for example, a cylinder. The Z-direction moving mechanism 213b is mounted on the end of the X-direction moving mechanism 213c on the Z1 direction side.
X方向移動機構213c安裝於旋動機構213d之Z1方向側之端部。X方向移動機構213c係以使擠壓部213a於一方向上直線移動之方式構成。X方向移動機構213c例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。The X-direction moving mechanism 213c is mounted on the end of the rotating mechanism 213d on the Z1 direction side. The X-direction moving mechanism 213c is configured to move the extruding portion 213a linearly in one direction. The X-direction moving mechanism 213c includes, for example, a driving portion having a linear conveyor module or a motor with a ball screw and an encoder.
施壓部213中,使擠壓部213a藉由Z方向移動機構213b上升至上升位置。施壓部213中,使擠壓部213a經由片狀構件W2自Z2方向側局部擠壓晶圓W1,同時使擠壓部213a藉由X方向移動機構213c於Y方向上移動,藉此分割晶圓W1。施壓部213中,使擠壓部213a藉由Z方向移動機構213b下降至下降位置。施壓部213中,於擠壓部213a之Y方向上之移動結束後,使擠壓部213a藉由旋動機構213d旋動90度。In the pressurizing section 213, the squeezing section 213a is raised to the raised position by the Z-direction moving mechanism 213b. In the pressurizing section 213, the squeezing section 213a is partially squeezed from the Z2 direction side by the sheet member W2, and at the same time, the squeezing section 213a is moved in the Y direction by the X-direction moving mechanism 213c, thereby dividing the wafer W1. In the pressurizing section 213, the squeezing section 213a is lowered to the lowered position by the Z-direction moving mechanism 213b. In the pressurizing section 213, after the squeezing section 213a is moved in the Y direction, the squeezing section 213a is rotated 90 degrees by the rotating mechanism 213d.
施壓部213中,使擠壓部213a藉由Z方向移動機構213b上升至上升位置。施壓部213中,於擠壓部213a旋動90度後,使擠壓部213a經由片狀構件W2自Z2方向側局部擠壓晶圓W1,同時使擠壓部213a藉由X方向移動機構213c於X方向上移動,藉此分割晶圓W1。In the pressurizing part 213, the squeezing part 213a is raised to the raised position by the Z-direction moving mechanism 213b. In the pressurizing part 213, after the squeezing part 213a is rotated 90 degrees, the squeezing part 213a partially squeezes the wafer W1 from the Z2 direction side through the sheet member W2, and at the same time, the squeezing part 213a is moved in the X direction by the X-direction moving mechanism 213c, thereby dividing the wafer W1.
<夾持部> 夾持部214設置於擴展本體部200。夾持部214係以固持晶圓環構造體W之環狀構件W3之方式構成。具體而言,夾持部214具有固持部214a、Z方向移動機構214b及Y方向移動機構214c。固持部214a自Z2方向側支持環狀構件W3,並且自Z1方向側壓住環狀構件W3。如此,環狀構件W3由固持部214a固持。固持部214a安裝於Z方向移動機構214b。夾持部214保持晶圓W1,並使晶圓W1於晶圓冷卻位置P4之冷卻單元207與晶圓加熱位置P5之熱收縮部211之間移動。再者,夾持部214係申請專利範圍中之「晶圓移動部」之一例。 <Clamping section> The clamping section 214 is provided on the extended main body 200. The clamping section 214 is configured to hold the annular member W3 of the wafer ring structure W. Specifically, the clamping section 214 has a holding section 214a, a Z-direction moving mechanism 214b, and a Y-direction moving mechanism 214c. The holding section 214a supports the annular member W3 from the Z2 direction side, and presses the annular member W3 from the Z1 direction side. In this way, the annular member W3 is held by the holding section 214a. The holding section 214a is mounted on the Z-direction moving mechanism 214b. The clamping part 214 holds the wafer W1 and moves the wafer W1 between the cooling unit 207 at the wafer cooling position P4 and the heat shrinking part 211 at the wafer heating position P5. Furthermore, the clamping part 214 is an example of a "wafer moving part" in the scope of the patent application.
Z方向移動機構214b係以使夾持部214於Z方向上移動之方式構成。具體而言,Z方向移動機構214b係以使固持部214a於Z1方向或Z2方向上移動之方式構成。Z方向移動機構214b例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。Z方向移動機構214b安裝於Y方向移動機構214c。Y方向移動機構214c係以使Z方向移動機構214b於Y1方向或Y2方向上移動之方式構成。Y方向移動機構214c例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。The Z-direction moving mechanism 214b is configured so that the clamping portion 214 moves in the Z direction. Specifically, the Z-direction moving mechanism 214b is configured so that the holding portion 214a moves in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 214b, for example, includes a driving portion having a linear conveyor module, or a motor with a ball screw and an encoder. The Z-direction moving mechanism 214b is mounted on the Y-direction moving mechanism 214c. The Y-direction moving mechanism 214c is configured so that the Z-direction moving mechanism 214b moves in the Y1 direction or the Y2 direction. The Y-direction moving mechanism 214c, for example, includes a driving portion having a linear conveyor module, or a motor with a ball screw and an encoder.
(半導體晶圓之加工裝置之控制體系之構成) 如圖9所示,半導體晶圓之加工裝置100具備第1控制部101、第2控制部102、第3控制部103、第4控制部104、第5控制部105、第6控制部106、第7控制部107、第8控制部108、擴展控制運算部109、處理控制運算部110、切割控制運算部111及記憶部112。 (Composition of the control system of the semiconductor wafer processing device) As shown in FIG9, the semiconductor wafer processing device 100 has a first control unit 101, a second control unit 102, a third control unit 103, a fourth control unit 104, a fifth control unit 105, a sixth control unit 106, a seventh control unit 107, an eighth control unit 108, an expansion control operation unit 109, a processing control operation unit 110, a cutting control operation unit 111 and a memory unit 112.
第1控制部101係以控制施壓部213之方式構成。第1控制部101包含CPU(Central Processing Unit,中央處理單元)、具有ROM(Read Only Memory,唯讀記憶體)及RAM(Random Access Memory,隨機存取記憶體)等之記憶部。再者,第1控制部101亦可包含電壓被阻斷後依然保持所記憶之資訊之HDD(Hard Disk Drive,硬碟驅動器)等作為記憶部。又,HDD亦可為相對於第1控制部101、第2控制部102、第3控制部103、第4控制部104、第5控制部105、第6控制部106、第7控制部107及第8控制部108而共通設置。The first control unit 101 is configured to control the pressure applying unit 213. The first control unit 101 includes a CPU (Central Processing Unit), a memory unit having a ROM (Read Only Memory) and a RAM (Random Access Memory). Furthermore, the first control unit 101 may also include a HDD (Hard Disk Drive) as a memory unit that retains the stored information even after the voltage is cut off. Furthermore, the HDD may be commonly provided for the first control unit 101, the second control unit 102, the third control unit 103, the fourth control unit 104, the fifth control unit 105, the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108.
第2控制部102係以控制冷氣供給部206及冷卻單元207之方式構成。第2控制部102包含CPU、具有ROM及RAM等之記憶部。第3控制部103係以控制熱收縮部211及紫外線照射部212之方式構成。第3控制部103包含CPU、具有ROM及RAM等之記憶部。再者,第2控制部102及第3控制部103亦可包含電壓被阻斷後依然保持所記憶之資訊之HDD等作為記憶部。The second control unit 102 is configured to control the cold air supply unit 206 and the cooling unit 207. The second control unit 102 includes a CPU and a memory unit including a ROM and a RAM. The third control unit 103 is configured to control the heat shrinking unit 211 and the ultraviolet irradiation unit 212. The third control unit 103 includes a CPU and a memory unit including a ROM and a RAM. Furthermore, the second control unit 102 and the third control unit 103 may also include a HDD or the like as a memory unit that retains the stored information even after the voltage is cut off.
第4控制部104係以控制晶圓盒部202及提昇手部203之方式構成。第4控制部104包含CPU、具有ROM及RAM等之記憶部。第5控制部105係以控制吸附手部204之方式構成。第5控制部105包含CPU、具有ROM及RAM等之記憶部。再者,第4控制部104及第5控制部105亦可包含電壓被阻斷後依然保持所記憶之資訊之HDD等作為記憶部。The fourth control unit 104 is configured to control the wafer box unit 202 and the lifting hand unit 203. The fourth control unit 104 includes a CPU, a memory unit including ROM and RAM, etc. The fifth control unit 105 is configured to control the suction hand unit 204. The fifth control unit 105 includes a CPU, a memory unit including ROM and RAM, etc. Furthermore, the fourth control unit 104 and the fifth control unit 105 may also include a HDD or the like as a memory unit that retains the stored information even after the voltage is cut off.
第6控制部106係以控制卡盤工作台部12之方式構成。第6控制部106包含CPU、具有ROM及RAM等之記憶部。第7控制部107係以控制雷射部13之方式構成。第7控制部107包含CPU、具有ROM及RAM等之記憶部。第8控制部108係以控制攝像部14之方式構成。第8控制部108包含CPU、具有ROM及RAM等之記憶部。再者,第6控制部106、第7控制部107及第8控制部108亦可包含電壓被阻斷後依然保持所記憶之資訊之HDD等作為記憶部。The sixth control unit 106 is configured to control the chuck table unit 12. The sixth control unit 106 includes a CPU and a memory unit including a ROM and a RAM. The seventh control unit 107 is configured to control the laser unit 13. The seventh control unit 107 includes a CPU and a memory unit including a ROM and a RAM. The eighth control unit 108 is configured to control the imaging unit 14. The eighth control unit 108 includes a CPU and a memory unit including a ROM and a RAM. Furthermore, the sixth control unit 106, the seventh control unit 107 and the eighth control unit 108 may also include a HDD or the like as a memory unit that retains the stored information even after the voltage is cut off.
擴展控制運算部109係以基於第1控制部101、第2控制部102及第3控制部103之處理結果,而進行與片狀構件W2之擴展處理相關之運算之方式構成。擴展控制運算部109包含CPU、具有ROM及RAM等之記憶部。The expansion control operation unit 109 is configured to perform operations related to the expansion process of the sheet member W2 based on the processing results of the first control unit 101, the second control unit 102, and the third control unit 103. The expansion control operation unit 109 includes a CPU, a memory unit including a ROM and a RAM.
處理控制運算部110係以基於第4控制部104及第5控制部105之處理結果,而進行與晶圓環構造體W之移動處理相關之運算之方式構成。處理控制運算部110包含CPU、具有ROM及RAM等之記憶部。The processing control calculation unit 110 is configured to perform calculations related to the movement process of the wafer ring structure W based on the processing results of the fourth control unit 104 and the fifth control unit 105. The processing control calculation unit 110 includes a CPU and a memory unit including a ROM and a RAM.
切割控制運算部111係以基於第6控制部106、第7控制部107及第8控制部108之處理結果,而進行與晶圓W1之切割處理相關之運算之方式構成。切割控制運算部111包含CPU、具有ROM及RAM等之記憶部。The dicing control calculation unit 111 is configured to perform calculations related to the dicing process of the wafer W1 based on the processing results of the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108. The dicing control calculation unit 111 includes a CPU, a memory unit including a ROM and a RAM, and the like.
記憶部112記憶有用以使切割裝置1及擴展裝置2動作之程式。記憶部19包含ROM、RAM及HDD等。The memory unit 112 stores programs for operating the cutting device 1 and the expansion device 2. The memory unit 19 includes a ROM, a RAM, and a HDD.
(半導體晶片製造處理) 以下,參照圖10及圖11,對半導體晶圓之加工裝置100之整體動作進行說明。 (Semiconductor wafer manufacturing process) Below, referring to FIG. 10 and FIG. 11, the overall operation of the semiconductor wafer processing device 100 is described.
步驟S1中,自晶圓盒部202取出晶圓環構造體W。即,藉由提昇手203b支持被收容於晶圓盒部202內之晶圓環構造體W後,使提昇手203b藉由Y方向移動機構31向Y1方向側移動,藉此自晶圓盒部202取出晶圓環構造體W。步驟S2中,藉由吸附手204c將晶圓環構造體W移載至切割裝置1之卡盤工作台部12。即,使自晶圓盒部202取出之晶圓環構造體W以被吸附手204c吸附之狀態,藉由X方向移動機構204a向X2方向側移動。然後,使移動至X2方向側之晶圓環構造體W於自吸附手204c移載至卡盤工作台部12後,由卡盤工作台部12固持。In step S1, the wafer ring structure W is taken out from the wafer box 202. That is, after the wafer ring structure W accommodated in the wafer box 202 is supported by the lifting hand 203b, the lifting hand 203b is moved to the Y1 direction by the Y direction moving mechanism 31, thereby taking out the wafer ring structure W from the wafer box 202. In step S2, the wafer ring structure W is transferred to the chuck table 12 of the cutting device 1 by the suction hand 204c. That is, the wafer ring structure W taken out from the wafer box 202 is moved to the X2 direction by the X direction moving mechanism 204a in a state of being sucked by the suction hand 204c. Then, the wafer ring structure W moved to the X2 direction side is transferred from the suction hand 204 c to the chuck table portion 12 and then held by the chuck table portion 12 .
步驟S3中,藉由雷射部13於晶圓W1形成改質層。步驟S4中,藉由吸附手204c將具有已形成改質層之晶圓W1之晶圓環構造體W移載至夾持部214。步驟S5中,藉由冷氣供給部206及冷卻單元207冷卻片狀構件W2。即,藉由Z方向移動機構214b使固持於夾持部214之晶圓環構造體W於Z2方向上移動(下降)而與冷卻單元207接觸,並且藉由冷氣供給部206自Z1方向側供給冷氣,藉此冷卻片狀構件W2。In step S3, a modified layer is formed on the wafer W1 by the laser unit 13. In step S4, the wafer ring structure W having the wafer W1 formed with the modified layer is transferred to the clamping unit 214 by the suction hand 204c. In step S5, the sheet-like member W2 is cooled by the cold air supply unit 206 and the cooling unit 207. That is, the wafer ring structure W held by the clamping unit 214 is moved (descended) in the Z2 direction by the Z-direction moving mechanism 214b to contact the cooling unit 207, and the cold air supply unit 206 supplies cold air from the Z1 direction side, thereby cooling the sheet-like member W2.
步驟S6中,使晶圓環構造體W藉由夾持部214移動至擴展部208。即,使片狀構件W2已被冷卻之晶圓環構造體W以固持於夾持部214之狀態,藉由Y方向移動機構214c於Y1方向上移動。步驟S7中,藉由擴展部208擴展片狀構件W2。即,使晶圓環構造體W以固持於夾持部214之狀態,藉由Z方向移動機構214b於Z2方向上移動。然後,使片狀構件W2抵接於擴展環281,並且藉由擴展環281加以拉伸,藉此使之擴展。從而,將晶圓W1沿著分割線(改質層)分割。In step S6, the wafer ring structure W is moved to the expansion part 208 through the clamping part 214. That is, the wafer ring structure W in which the sheet member W2 has been cooled is moved in the Y1 direction by the Y direction moving mechanism 214c while being held in the clamping part 214. In step S7, the sheet member W2 is expanded by the expansion part 208. That is, the wafer ring structure W is moved in the Z2 direction by the Z direction moving mechanism 214b while being held in the clamping part 214. Then, the sheet member W2 is abutted against the expansion ring 281 and stretched by the expansion ring 281, thereby expanding. Thus, the wafer W1 is divided along the dividing lines (modified layers).
步驟S8中,藉由擴張維持構件210自Z1方向側壓住已被擴展狀態之片狀構件W2。即,使擠壓環部210a藉由Z方向移動機構210d於Z2方向上移動(下降)直至與片狀構件W2抵接為止。然後,經由圖10之A點至圖11之A點進入步驟S9。In step S8, the sheet member W2 in the expanded state is pressed from the Z1 direction by the expansion holding member 210. That is, the squeezing ring 210a is moved (descended) in the Z2 direction by the Z-direction moving mechanism 210d until it contacts the sheet member W2. Then, the process proceeds to step S9 via point A in FIG. 10 to point A in FIG. 11.
如圖11所示,步驟S9中,藉由擴張維持構件210壓住片狀構件W2後,一面藉由施壓部213擠壓晶圓W1,一面藉由紫外線照射部212對片狀構件W2照射紫外線Ut。藉此,晶圓W1被施壓部213進而分割。又,片狀構件W2之黏著力藉由自紫外線照射部212照射之紫外線Ut而降低。As shown in FIG. 11 , in step S9 , after the sheet member W2 is pressed by the expansion and holding member 210 , the wafer W1 is squeezed by the pressing portion 213 , and the sheet member W2 is irradiated with ultraviolet rays Ut by the ultraviolet irradiation portion 212 . Thus, the wafer W1 is further divided by the pressing portion 213 . In addition, the adhesion of the sheet member W2 is reduced by the ultraviolet rays Ut irradiated from the ultraviolet irradiation portion 212 .
步驟S10中,藉由熱收縮部211加熱片狀構件W2,使之收縮,同時使夾持部214上升。此時,吸氣部210c被加熱而吸入片狀構件W2附近之空氣。步驟S11中,將晶圓環構造體W自夾持部214移載至吸附手204c。即,使晶圓環構造體W以固持於夾持部214之狀態,藉由Y方向移動機構214c於Y2方向上移動。然後,於冷卻單元207之Z1方向側之位置處,解除夾持部214對晶圓環構造體W之固持,其後藉由吸附手204c吸附該晶圓環構造體W。In step S10, the sheet member W2 is heated by the heat shrinking part 211 to shrink it, and at the same time, the clamping part 214 is raised. At this time, the suction part 210c is heated and sucks the air near the sheet member W2. In step S11, the wafer ring structure W is transferred from the clamping part 214 to the suction hand 204c. That is, the wafer ring structure W is moved in the Y2 direction by the Y-direction moving mechanism 214c while being fixed in the clamping part 214. Then, at the position on the Z1 direction side of the cooling unit 207, the clamping part 214 releases the wafer ring structure W, and then the wafer ring structure W is sucked by the suction hand 204c.
步驟S12中,藉由吸附手204c將晶圓環構造體W移載至提昇手203b。步驟S13中,將晶圓環構造體W收容至晶圓盒部202。即,使由提昇手203b支持之晶圓環構造體W藉由Y方向移動機構203a向Y1方向側移動,藉此將晶圓環構造體W收容至晶圓盒部202。藉由上述步驟,對1片晶圓環構造體W所進行之處理結束。然後,經由圖11之B點至圖10之B點返回步驟S1。In step S12, the wafer ring structure W is transferred to the lifting hand 203b by the suction hand 204c. In step S13, the wafer ring structure W is stored in the wafer box part 202. That is, the wafer ring structure W supported by the lifting hand 203b is moved to the Y1 direction by the Y direction moving mechanism 203a, thereby storing the wafer ring structure W in the wafer box part 202. Through the above steps, the processing of one wafer ring structure W is completed. Then, it returns to step S1 via point B in Figure 11 to point B in Figure 10.
(擴展部、擴張維持構件、紫外線照射部及施壓部之詳細構成) 參照圖12及圖13,對擴展部208、擴張維持構件210、紫外線照射部212及施壓部213之詳細構成進行說明。再者,圖12中未圖示擴展裝置2之熱收縮部211以便說明。 (Detailed structure of expansion part, expansion holding member, ultraviolet irradiation part and pressure applying part) Referring to FIG. 12 and FIG. 13, the detailed structure of the expansion part 208, the expansion holding member 210, the ultraviolet irradiation part 212 and the pressure applying part 213 is described. In addition, FIG. 12 does not show the heat shrinking part 211 of the expansion device 2 for the sake of explanation.
圖12所示之擴展裝置2中,示出了進行擴展環281對片狀構件W2之擴展前之狀態。此處,夾持部214配置於上升位置Up。即,固持部214a藉由Z方向移動機構214b配置於上升位置Up。The expansion device 2 shown in Fig. 12 shows a state before the expansion ring 281 expands the sheet member W2. Here, the clamping portion 214 is arranged at the raised position Up. That is, the holding portion 214a is arranged at the raised position Up by the Z-direction moving mechanism 214b.
圖13所示之擴展裝置2中,示出了正進行擴展環281對片狀構件W2之擴展之狀態。此處,夾持部214配置於下降位置Lw。即,固持部214a正藉由Z方向移動機構214b自上升位置Up向下降位置Lw朝Z2方向側移動。The expansion device 2 shown in FIG. 13 shows a state in which the expansion ring 281 is expanding the sheet member W2. Here, the clamping portion 214 is arranged at the lowered position Lw. That is, the holding portion 214a is moving from the rising position Up to the lowered position Lw toward the Z2 direction side by the Z-direction moving mechanism 214b.
片狀構件W2於固持部214a自上升位置Up向下降位置Lw朝Z2方向側移動時,藉由與擴展環281之上端部281a抵接而延展。此時,晶圓W1被片狀構件W2拉伸,藉此於晶圓W1內產生拉伸應力,因此沿著形成於晶圓W1之改質層分割晶圓W1。藉此,形成複數個半導體晶片Ch。When the holding portion 214a moves sideways in the Z2 direction from the rising position Up to the falling position Lw, the sheet member W2 is extended by contacting with the upper end portion 281a of the expansion ring 281. At this time, the wafer W1 is stretched by the sheet member W2, thereby generating a tensile stress in the wafer W1, thereby dividing the wafer W1 along the modified layer formed on the wafer W1. In this way, a plurality of semiconductor chips Ch are formed.
<擴展部> 擴展部208具有擴展環281,該擴展環281於夾持部214固持著晶圓環構造體W之狀態下,使片狀構件W2擴展,藉此將晶圓W1分割成相互設置有間隔Mr之狀態之複數個半導體晶片Ch。即,擴展環281係以利用藉由Z方向移動機構214b自上升位置Up向下降位置Lw朝Z2方向側移動之夾持部214而擴展片狀構件W2之方式構成。 <Expansion section> The expansion section 208 has an expansion ring 281, which expands the sheet member W2 while the wafer ring structure W is held by the clamping section 214, thereby dividing the wafer W1 into a plurality of semiconductor chips Ch that are spaced Mr apart from each other. That is, the expansion ring 281 is configured to expand the sheet member W2 by utilizing the clamping section 214 that moves in the Z2 direction from the rising position Up to the falling position Lw by the Z-direction moving mechanism 214b.
擴展環281固定於基底205上。擴展環281之上端部281a配置於Z方向上之規定高度位置Hd。規定高度位置Hd係以基底205之上表面為基準之高度位置。如此,擴展環281之上端部281a保持配置於規定高度位置Hd之狀態。The expansion ring 281 is fixed on the base 205. The upper end 281a of the expansion ring 281 is arranged at a predetermined height position Hd in the Z direction. The predetermined height position Hd is a height position based on the upper surface of the base 205. In this way, the upper end 281a of the expansion ring 281 is kept arranged at the predetermined height position Hd.
如圖14所示,擴張維持構件210係以維持晶圓W1附近之片狀構件W2之擴展狀態之方式構成。圖14中未圖示擴展裝置2之熱收縮部211以便說明。As shown in Fig. 14, the expansion maintaining member 210 is configured to maintain the expanded state of the sheet member W2 near the wafer W1. The heat shrinking portion 211 of the expansion device 2 is not shown in Fig. 14 for the sake of illustration.
具體而言,擴張維持構件210具有擠壓環部210a及蓋部210b。Specifically, the expansion maintaining member 210 has an extrusion ring portion 210a and a cover portion 210b.
擠壓環部210a俯視下具有以包圍晶圓W1之方式配置之圓筒形狀。蓋部210b係以覆蓋擠壓環部210a之向Z1方向敞開之開口之方式設置。蓋部210b以堵住擠壓環部210a之向Z1方向敞開之開口之方式設置於擠壓環部210a之內側1210a。蓋部210b設置於擠壓環部210a之內側1210a之Z1方向側之端部。內側1210a係圓筒形狀之擠壓環部210a之徑向上之內側。The extrusion ring 210a has a cylindrical shape configured to surround the wafer W1 in a top view. The cover 210b is provided in a manner to cover the opening of the extrusion ring 210a that opens in the Z1 direction. The cover 210b is provided on the inner side 1210a of the extrusion ring 210a in a manner to block the opening of the extrusion ring 210a that opens in the Z1 direction. The cover 210b is provided at the end of the inner side 1210a of the extrusion ring 210a on the Z1 direction side. The inner side 1210a is the inner side of the cylindrical extrusion ring 210a in the radial direction.
紫外線照射部212係以自Z2方向側對擴展狀態之片狀構件W2照射紫外線Ut之方式構成。又,紫外線照射部212配置於擴展狀態之片狀構件W2之晶圓W1之Z2方向之位置。The ultraviolet irradiation unit 212 is configured to irradiate the sheet-like member W2 in the expanded state with ultraviolet rays Ut from the Z2 direction. The ultraviolet irradiation unit 212 is disposed at a position in the Z2 direction of the wafer W1 of the sheet-like member W2 in the expanded state.
藉由圓筒形狀之擠壓環部210a與蓋部210b自Z1方向側覆蓋晶圓W1,藉此避免自紫外線照射部212照射之紫外線Ut從擴張維持構件210向外部洩漏。如此,擴張維持構件210不僅具有維持晶圓W1附近之片狀構件W2之擴展狀態之功能,還具有遮蔽紫外線Ut之功能。又,擴張維持構件210為了抑制因遮蔽紫外線Ut而導致之材質之劣化,而由不鏽鋼等金屬形成。The wafer W1 is covered from the Z1 direction side by the cylindrical extrusion ring portion 210a and the cover portion 210b, thereby preventing the ultraviolet rays Ut irradiated from the ultraviolet irradiation portion 212 from leaking to the outside from the expansion and maintenance member 210. In this way, the expansion and maintenance member 210 not only has the function of maintaining the expansion state of the sheet member W2 near the wafer W1, but also has the function of shielding the ultraviolet rays Ut. In addition, the expansion and maintenance member 210 is formed of metal such as stainless steel to suppress the deterioration of the material due to shielding the ultraviolet rays Ut.
此處,第1實施方式中,如圖1所示,提昇手部203係以位在切割裝置1與擴展本體部200之間之方式配置。具體而言,提昇手部203於X方向上,配置於切割裝置1之X1方向側。又,提昇手部203於X方向上,配置於擴展本體部200之X2方向側。Here, in the first embodiment, as shown in FIG1 , the lifting hand 203 is disposed between the cutting device 1 and the extension body 200. Specifically, the lifting hand 203 is disposed on the X1 direction side of the cutting device 1 in the X direction. Also, the lifting hand 203 is disposed on the X2 direction side of the extension body 200 in the X direction.
即,由該半導體晶圓之加工裝置100實施之半導體晶片之製造方法中,包含如下工序:藉由提昇手部203自收容晶圓W1之晶圓盒部202取出晶圓W1,或向晶圓盒部202放入晶圓W1;藉由切割裝置1進行切割,以分割晶圓W1而形成複數個半導體晶片Ch;及藉由擴展本體部200對晶圓W1進行與切割不同之加工;且提昇手部203係以位在切割裝置1與擴展本體部200之間之方式配置。That is, the semiconductor chip manufacturing method implemented by the semiconductor wafer processing device 100 includes the following steps: taking out the wafer W1 from the wafer box part 202 that accommodates the wafer W1 by the lifting hand part 203, or putting the wafer W1 into the wafer box part 202; cutting by the cutting device 1 to divide the wafer W1 into a plurality of semiconductor chips Ch; and performing processing different from cutting on the wafer W1 by the extended body part 200; and the lifting hand part 203 is configured in a manner of being located between the cutting device 1 and the extended body part 200.
又,使用該半導體晶圓之加工裝置100製造所得之半導體晶片Ch係由半導體晶圓之加工裝置100製造而成,上述半導體晶圓之加工裝置100具備:晶圓盒部202,其收容晶圓W1;提昇手部203,其自晶圓盒部202取出晶圓W1,或向晶圓盒部202放入晶圓W1;切割裝置1,其切割晶圓W1;及擴展本體部200,其對晶圓進行與切割不同之加工;且提昇手部203係以位在切割裝置1與擴展本體部200之間之方式配置。Furthermore, the semiconductor chip Ch manufactured using the semiconductor wafer processing device 100 is manufactured by the semiconductor wafer processing device 100, and the above-mentioned semiconductor wafer processing device 100 has: a wafer box part 202, which accommodates the wafer W1; a lifting hand part 203, which takes out the wafer W1 from the wafer box part 202, or puts the wafer W1 into the wafer box part 202; a cutting device 1, which cuts the wafer W1; and an extended body part 200, which performs processing on the wafer different from cutting; and the lifting hand part 203 is configured in a manner of being located between the cutting device 1 and the extended body part 200.
又,吸附手部204自提昇手部203接收晶圓W1,並將晶圓搬送至切割裝置1或擴展本體部200。具體而言,吸附手部204相對於提昇手部203,在配置於晶圓盒部202之Y2方向側之交接位置P1交接晶圓W1。又,吸附手部204相對於切割裝置1,在配置於交接位置P1之X2方向側之交接位置P2交接晶圓W1。又,吸附手部204相對於擴展本體部200,在配置於交接位置P1之X1方向側之交接位置P3交接晶圓W1。Furthermore, the suction hand 204 receives the wafer W1 from the lifting hand 203 and transports the wafer to the cutting device 1 or the extended body 200. Specifically, the suction hand 204 delivers the wafer W1 at a delivery position P1 disposed on the Y2 direction side of the wafer box 202 relative to the lifting hand 203. Furthermore, the suction hand 204 delivers the wafer W1 at a delivery position P2 disposed on the X2 direction side of the delivery position P1 relative to the cutting device 1. Furthermore, the suction hand 204 delivers the wafer W1 at a delivery position P3 disposed on the X1 direction side of the delivery position P1 relative to the extended body 200.
又,切割裝置1之晶圓之交接位置P2、擴展本體部200之晶圓之交接位置P3、及自提昇手部203向吸附手部204之晶圓之交接位置P1呈直線狀配置。又,吸附手部204係以可沿著提昇手部203、切割裝置1及擴展本體部200排列之方向(X方向)呈直線狀移動之方式構成。Furthermore, the wafer transfer position P2 of the dicing device 1, the wafer transfer position P3 of the extended body 200, and the wafer transfer position P1 from the lifting hand 203 to the suction hand 204 are arranged in a straight line. Furthermore, the suction hand 204 is configured to be movable in a straight line along the direction (X direction) in which the lifting hand 203, the dicing device 1, and the extended body 200 are arranged.
吸附手部204係以於提昇手部203、切割裝置1及擴展本體部200之間,搬送包含片狀構件W2與環狀之環狀構件W3之晶圓環構造體W之方式構成,上述片狀構件W2貼附有晶圓W1,且具有伸縮性,上述環狀構件W3以包圍晶圓W1之狀態貼附於片狀構件W2。The suction hand 204 is constructed in such a way as to transport a wafer ring structure W including a sheet component W2 and an annular ring component W3 between the lifting hand 203, the cutting device 1 and the extended main body 200. The sheet component W2 is attached with a wafer W1 and has elasticity. The annular component W3 is attached to the sheet component W2 in a state of surrounding the wafer W1.
又,如圖1所示,晶圓盒部202及提昇手部203沿著與提昇手部203、切割裝置1及擴展本體部200排列之方向正交之方向(Y方向)排列而配置。1, the wafer cassette unit 202 and the lifting arm 203 are arranged in a direction (Y direction) perpendicular to the direction in which the lifting arm 203, the dicing device 1, and the extended body 200 are arranged.
又,作為晶圓加工部之擴展本體部200之晶圓冷卻位置P4之冷卻單元207及晶圓加熱位置P5之熱收縮部211沿著與提昇手部203、切割裝置1及擴展本體部200排列之方向正交之方向(Y方向)排列而配置。In addition, the cooling unit 207 of the wafer cooling position P4 and the heat shrinkage part 211 of the wafer heating position P5 of the extended body 200 as the wafer processing part are arranged along the direction (Y direction) orthogonal to the direction in which the lifting hand 203, the cutting device 1 and the extended body 200 are arranged.
又,晶圓盒部202相對於提昇手部203而配置於前後方向之一側(Y1方向側),於晶圓盒部202之前後方向之另一側(Y2方向側)配置有提昇手部203,於提昇手部203之橫側(X1方向側)配置有擴展本體部200之晶圓冷卻位置P4之冷卻單元207,於晶圓冷卻位置P4之前後方向之一側(Y1方向側)配置有擴展本體部200之晶圓加熱位置P5之熱收縮部211。Furthermore, the wafer box portion 202 is arranged on one side of the front-to-back direction (the Y1 direction side) relative to the lifting arm portion 203, the lifting arm portion 203 is arranged on the other side of the front-to-back direction of the wafer box portion 202 (the Y2 direction side), the cooling unit 207 of the wafer cooling position P4 of the extended body portion 200 is arranged on the lateral side (the X1 direction side) of the lifting arm portion 203, and the heat shrinkage portion 211 of the wafer heating position P5 of the extended body portion 200 is arranged on one side of the front-to-back direction of the wafer cooling position P4 (the Y1 direction side).
具體而言,晶圓盒部202、提昇手部203、擴展本體部200之晶圓冷卻位置P4之冷卻單元207及晶圓加熱位置P5之熱收縮部211呈矩形形狀配置。Specifically, the wafer box part 202, the lifting hand part 203, the cooling unit 207 at the wafer cooling position P4 of the extended body 200, and the heat shrinking part 211 at the wafer heating position P5 are arranged in a rectangular shape.
又,施壓部213於前後方向(Y方向)上,配置於與晶圓加熱位置P5之熱收縮部211重疊之位置。Furthermore, the pressure applying portion 213 is disposed at a position overlapping with the heat shrinking portion 211 at the wafer heating position P5 in the front-rear direction (Y direction).
又,紫外線照射部212於前後方向(Y方向)上,配置於與晶圓加熱位置P5之熱收縮部211重疊之位置。Furthermore, the ultraviolet irradiation part 212 is arranged at a position overlapping with the heat shrinking part 211 at the wafer heating position P5 in the front-back direction (Y direction).
(第1實施方式之效果) 第1實施方式中,能獲得如下所述之效果。 (Effects of the first implementation method) In the first implementation method, the following effects can be obtained.
第1實施方式中,如上所述,提昇手部203係以位在切割裝置1與擴展本體部200之間之方式配置。藉此,能對切割裝置1及擴展本體部200中之一者,不經由切割裝置1及擴展本體部200中之另一者地自晶圓盒部202直接供給晶圓W1,因此進行一部分加工處理時,能獨立地進行加工處理。其結果,即便只進行複數個加工處理中之一部分加工處理時,亦能效率良好地進行晶圓W1之加工處理。又,連續地進行切割裝置1及擴展本體部200所實施之處理之情形時,藉由使晶圓於切割裝置1與擴展本體部200之間移動,能進行複數個加工處理。In the first embodiment, as described above, the lifting hand 203 is arranged in a manner to be located between the cutting device 1 and the extended body 200. Thereby, the wafer W1 can be directly supplied from the wafer box 202 to one of the cutting device 1 and the extended body 200 without passing through the other of the cutting device 1 and the extended body 200, so that when a part of the processing is performed, the processing can be performed independently. As a result, even when only a part of the processing is performed among a plurality of processing, the processing of the wafer W1 can be performed efficiently. In addition, when the processing performed by the cutting device 1 and the extended body 200 is performed continuously, a plurality of processing can be performed by moving the wafer between the cutting device 1 and the extended body 200.
又,第1實施方式中,如上所述,進而具備吸附手部204,該吸附手部204自提昇手部203接收晶圓W1,並將晶圓搬送至切割裝置1或擴展本體部200。藉此,能藉由吸附手部204於提昇手部203、切割裝置1及擴展本體部200之間容易地搬送晶圓。In the first embodiment, as described above, a suction hand 204 is further provided, which receives the wafer W1 from the lifting hand 203 and transfers the wafer to the dicing device 1 or the extended body 200. Thus, the suction hand 204 can easily transfer the wafer between the lifting hand 203, the dicing device 1 and the extended body 200.
又,第1實施方式中,如上所述,切割裝置1之晶圓之交接位置P2、擴展本體部200之晶圓之交接位置P3、及自提昇手部203向吸附手部204之晶圓之交接位置P1呈直線狀配置,且吸附手部204係以可沿著提昇手部203、切割裝置1及擴展本體部200排列之方向(X方向)呈直線狀移動之方式構成。藉此,能藉由直線狀之移送軸於切割裝置1之晶圓之交接位置P2、擴展本體部200之晶圓之交接位置P3、及自提昇手部203向吸附手部204之晶圓之交接位置P1之間進行搬送,因此能抑制搬送晶圓W1之構成複雜化。又,能藉由吸附手部204於切割裝置1與擴展本體部200之間容易地直接搬送晶圓W1。Furthermore, in the first embodiment, as described above, the wafer handover position P2 of the cutting device 1, the wafer handover position P3 of the extended body 200, and the wafer handover position P1 from the lifting hand 203 to the suction hand 204 are arranged in a straight line, and the suction hand 204 is configured to be movable in a straight line along the direction (X direction) in which the lifting hand 203, the cutting device 1, and the extended body 200 are arranged. Thus, the wafer can be transported between the wafer handover position P2 of the cutting device 1, the wafer handover position P3 of the extended body 200, and the wafer handover position P1 from the lifting hand 203 to the suction hand 204 by a straight transfer axis, thereby suppressing the complexity of the structure for transporting the wafer W1. Furthermore, the wafer W1 can be easily and directly transferred between the dicing device 1 and the extended main body 200 by the suction hand 204 .
又,第1實施方式中,如上所述,吸附手部204係以於提昇手部203、切割裝置1及擴展本體部200之間,搬送包含片狀構件W2與環狀之環狀構件W3之晶圓環構造體W之方式構成,上述片狀構件W2貼附有晶圓W1,且具有伸縮性,上述環狀構件W3以包圍晶圓W1之狀態貼附於片狀構件W2。藉此,藉由即便晶圓W1之大小不同,亦使環狀構件W3之形狀共通,能藉由吸附手部204於切割裝置1與擴展本體部200之間容易地搬送不同大小之晶圓W1。Furthermore, in the first embodiment, as described above, the suction hand 204 is configured to transport the wafer ring structure W including the sheet member W2 and the ring member W3 between the lifting hand 203, the cutting device 1, and the extended body 200. The sheet member W2 is attached with the wafer W1 and has elasticity, and the ring member W3 is attached to the sheet member W2 in a state of surrounding the wafer W1. Thus, even if the wafer W1 has different sizes, the shape of the ring member W3 is made common, and wafers W1 of different sizes can be easily transported between the cutting device 1 and the extended body 200 by the suction hand 204.
又,第1實施方式中,如上所述,擴展本體部200拉伸配置有晶圓W1之片狀構件W2而分割晶圓W1。藉此,能單獨或連續地對晶圓W1進行切割及擴展之加工處理。In the first embodiment, as described above, the expansion body 200 pulls the sheet member W2 on which the wafer W1 is placed to divide the wafer W1. Thus, the wafer W1 can be cut and expanded individually or continuously.
又,第1實施方式中,如上所述,晶圓盒部202及提昇手部203沿著與提昇手部203、切割裝置1及擴展本體部200排列之方向正交之方向(Y方向)排列而配置。藉此,使晶圓W1向切割裝置1及擴展本體部200移動時,能抑制晶圓盒部202干涉到移動之晶圓W1。Furthermore, in the first embodiment, as described above, the wafer box 202 and the lifting arm 203 are arranged in a direction (Y direction) perpendicular to the direction in which the lifting arm 203, the cutting device 1, and the expansion body 200 are arranged. Thus, when the wafer W1 is moved toward the cutting device 1 and the expansion body 200, the wafer box 202 can be prevented from interfering with the moving wafer W1.
又,第1實施方式中,如上所述,作為晶圓加工部之擴展本體部200之晶圓冷卻位置P4之冷卻單元207及晶圓加熱位置P5之熱收縮部211沿著與提昇手部203、切割裝置1及擴展本體部200排列之方向正交之方向(Y方向)排列而配置。藉此,使晶圓W1向切割裝置1及擴展本體部200移動時,能抑制晶圓加熱位置P5之熱收縮部211之構件干涉到移動之晶圓W1。Furthermore, in the first embodiment, as described above, the cooling unit 207 of the wafer cooling position P4 and the heat shrinking part 211 of the wafer heating position P5 of the extended body 200 as the wafer processing part are arranged in a direction (Y direction) perpendicular to the direction in which the lifting hand 203, the cutting device 1 and the extended body 200 are arranged. Thus, when the wafer W1 is moved toward the cutting device 1 and the extended body 200, it is possible to suppress the components of the heat shrinking part 211 of the wafer heating position P5 from interfering with the moving wafer W1.
又,第1實施方式中,如上所述,擴展本體部200包含夾持部214,該夾持部214保持晶圓W1,並使晶圓W1於晶圓冷卻位置P4之冷卻單元207與晶圓加熱位置P5之熱收縮部211之間移動。藉此,能容易地使已被搬送至擴展本體部200之晶圓W1於擴展本體部200內藉由夾持部214獨立地於晶圓冷卻位置P4之冷卻單元207與晶圓加熱位置P5之熱收縮部211之間移動。Furthermore, in the first embodiment, as described above, the extended body 200 includes the clamping part 214, which holds the wafer W1 and moves the wafer W1 between the cooling unit 207 at the wafer cooling position P4 and the heat shrinking part 211 at the wafer heating position P5. Thus, the wafer W1 transferred to the extended body 200 can be easily moved between the cooling unit 207 at the wafer cooling position P4 and the heat shrinking part 211 at the wafer heating position P5 in the extended body 200 by the clamping part 214 independently.
又,第1實施方式中,如上所述,晶圓盒部202相對於提昇手部203而配置於前後方向之一側(Y1方向側),於晶圓盒部202之前後方向之另一側(Y2方向側)配置有提昇手部203,於提昇手部203之橫側(X1方向側)配置有擴展本體部200之晶圓冷卻位置P4之冷卻單元207,於晶圓冷卻位置P4之前後方向之一側(Y1方向側)配置有擴展本體部200之晶圓加熱位置P5之熱收縮部211。藉此,能沿著晶圓W1之移動路徑,緊湊地配置晶圓盒部202、提昇手部203、擴展本體部200之晶圓冷卻位置P4之冷卻單元207及晶圓加熱位置P5之熱收縮部211。Furthermore, in the first embodiment, as described above, the wafer box portion 202 is arranged on one side of the front-rear direction (the Y1 direction side) relative to the lifting hand portion 203, the lifting hand portion 203 is arranged on the other side of the front-rear direction of the wafer box portion 202 (the Y2 direction side), the cooling unit 207 of the wafer cooling position P4 of the extended body 200 is arranged on the lateral side (the X1 direction side) of the lifting hand portion 203, and the heat shrinkage portion 211 of the wafer heating position P5 of the extended body 200 is arranged on one side of the front-rear direction of the wafer cooling position P4 (the Y1 direction side). Thereby, the wafer box part 202, the lifting hand part 203, the cooling unit 207 at the wafer cooling position P4 of the extended body part 200, and the heat shrinking part 211 at the wafer heating position P5 can be compactly arranged along the moving path of the wafer W1.
又,第1實施方式中,如上所述,晶圓盒部202、提昇手部203、擴展本體部200之晶圓冷卻位置P4之冷卻單元207及晶圓加熱位置P5之熱收縮部211呈矩形形狀配置。藉此,與將晶圓盒部202、提昇手部203、擴展本體部200之晶圓冷卻位置P4之冷卻單元207及晶圓加熱位置P5之熱收縮部211沿著規定方向呈直線狀配置之情形相比,能縮小設置於裝置周圍之維修空間之面積,因此能抑制用以設置半導體晶圓之加工裝置100之面積增大。Furthermore, in the first embodiment, as described above, the wafer box 202, the lifting hand 203, the cooling unit 207 at the wafer cooling position P4 of the extended body 200, and the heat shrinking unit 211 at the wafer heating position P5 are arranged in a rectangular shape. Thus, compared with the case where the wafer box 202, the lifting hand 203, the cooling unit 207 at the wafer cooling position P4 of the extended body 200, and the heat shrinking unit 211 at the wafer heating position P5 are arranged in a straight line along a predetermined direction, the area of the maintenance space provided around the device can be reduced, thereby suppressing the increase in the area of the processing device 100 for placing semiconductor wafers.
又,第1實施方式中,如上所述,具備進行經過分割之晶圓W1之破裂之施壓部213,且施壓部213於前後方向(Y方向)上,配置於與晶圓加熱位置P5之熱收縮部211重疊之位置。藉此,與將施壓部213設置於與晶圓加熱位置P5之熱收縮部211不重疊之位置之情形相比,能縮小擴展本體部200之前後方向之大小。In the first embodiment, as described above, the pressure applying part 213 for breaking the divided wafer W1 is provided, and the pressure applying part 213 is arranged at a position overlapping with the heat shrinking part 211 of the wafer heating position P5 in the front-back direction (Y direction). Thus, the size of the extended body 200 in the front-back direction can be reduced compared to the case where the pressure applying part 213 is arranged at a position not overlapping with the heat shrinking part 211 of the wafer heating position P5.
又,第1實施方式中,如上所述,具備紫外線照射部212,該紫外線照射部212對貼附有晶圓W1之片狀構件W2照射紫外線,且紫外線照射部212於前後方向(Y方向)上,配置於與晶圓加熱位置P5之熱收縮部211重疊之位置。藉此,與將紫外線照射部212設置於與晶圓加熱位置P5之熱收縮部211不重疊之位置之情形相比,能縮小擴展本體部200之前後方向之大小。Furthermore, in the first embodiment, as described above, the ultraviolet irradiation unit 212 is provided, and the ultraviolet irradiation unit 212 irradiates ultraviolet rays to the sheet member W2 to which the wafer W1 is attached, and the ultraviolet irradiation unit 212 is arranged at a position overlapping with the heat shrinking unit 211 of the wafer heating position P5 in the front-back direction (Y direction). Thus, compared with the case where the ultraviolet irradiation unit 212 is arranged at a position not overlapping with the heat shrinking unit 211 of the wafer heating position P5, the size of the extended main body 200 in the front-back direction can be reduced.
[第2實施方式] 參照圖15~圖20,對第2實施方式之半導體晶圓之加工裝置300之構成進行說明。第2實施方式中,與第1實施方式不同,施壓部3213配置於擴展環3281之外側。再者,第2實施方式中,對於與第1實施方式相同之構成,省略詳細說明。 [Second embodiment] Referring to FIGS. 15 to 20 , the structure of the semiconductor wafer processing device 300 of the second embodiment is described. In the second embodiment, unlike the first embodiment, the pressure applying portion 3213 is arranged outside the expansion ring 3281. In addition, in the second embodiment, the detailed description of the same structure as the first embodiment is omitted.
(半導體晶圓之加工裝置) 如圖15及圖16所示,半導體晶圓之加工裝置300係對設置於晶圓環構造體W之晶圓W1進行加工之裝置。再者,半導體晶圓之加工裝置300係申請專利範圍中之「晶圓加工裝置」之一例。 (Semiconductor wafer processing device) As shown in FIG. 15 and FIG. 16 , the semiconductor wafer processing device 300 is a device for processing the wafer W1 disposed in the wafer ring structure W. Furthermore, the semiconductor wafer processing device 300 is an example of a "wafer processing device" in the scope of the patent application.
又,半導體晶圓之加工裝置300具備切割裝置1及擴展裝置302。將上下方向設為Z方向,將上方向設為Z1方向,並且將下方向設為Z2方向。將與Z方向正交之水平方向中之切割裝置1與擴展裝置302排列之方向設為X方向,將X方向中之擴展裝置302側設為X1方向,將X方向中之切割裝置1側設為X2方向。將水平方向中之與X方向正交之方向設為Y方向,將Y方向中之一側設為Y1方向,將Y方向中之另一側設為Y2方向。Furthermore, the semiconductor wafer processing device 300 includes a cutting device 1 and an expansion device 302. The up-down direction is set as the Z direction, the up direction is set as the Z1 direction, and the down direction is set as the Z2 direction. The direction in which the cutting device 1 and the expansion device 302 are arranged in the horizontal direction orthogonal to the Z direction is set as the X direction, the expansion device 302 side in the X direction is set as the X1 direction, and the cutting device 1 side in the X direction is set as the X2 direction. The direction in the horizontal direction orthogonal to the X direction is set as the Y direction, one side in the Y direction is set as the Y1 direction, and the other side in the Y direction is set as the Y2 direction.
(切割裝置) 切割裝置1係以藉由沿著分割線(切割道)對晶圓W1照射具有透過性之波長之雷射,而形成改質層之方式構成。再者,切割裝置1係申請專利範圍中之「切割部」之一例。 (Cutting device) The cutting device 1 is configured to form a modified layer by irradiating a laser having a wavelength having transparency to the wafer W1 along a dividing line (cutting road). The cutting device 1 is an example of a "cutting unit" in the scope of the patent application.
具體而言,切割裝置1包含基底11、卡盤工作台部12、雷射部13及攝像部14。Specifically, the cutting device 1 includes a base 11 , a chuck table portion 12 , a laser portion 13 and an imaging portion 14 .
(擴展裝置) 如圖16及圖17所示,擴展裝置302係以將晶圓W1分割而形成複數個半導體晶片Ch之方式構成。 (Expansion device) As shown in FIG. 16 and FIG. 17, the expansion device 302 is configured to divide the wafer W1 into a plurality of semiconductor chips Ch.
擴展裝置302包含擴展本體部200、基底201、晶圓盒部202、提昇手部203、吸附手部204、基底205、冷氣供給部206、冷卻單元207、擴展部3208、基底209、擴張維持構件210、熱收縮部211、紫外線照射部212、施壓部3213、夾持部214、攝像部215及通報部216。The expansion device 302 includes an expansion body 200, a base 201, a wafer box part 202, a lifting hand 203, a suction hand 204, a base 205, a cold air supply part 206, a cooling unit 207, an expansion part 3208, a base 209, an expansion holding member 210, a heat shrinking part 211, an ultraviolet irradiation part 212, a pressure applying part 3213, a clamping part 214, a camera part 215 and a notification part 216.
<擴展部> 擴展部3208係以藉由擴展晶圓環構造體W之片狀構件W2,而沿著分割線分割晶圓W1之方式構成。 <Expansion section> The expansion section 3208 is formed by expanding the sheet member W2 of the wafer ring structure W to divide the wafer W1 along the dividing line.
具體而言,擴展部3208具有擴展環3281及Z方向移動機構3282。Specifically, the expansion portion 3208 has an expansion ring 3281 and a Z-direction moving mechanism 3282 .
擴展環3281係以藉由自Z2方向側支持片狀構件W2,而使片狀構件W2擴展(擴張)之方式構成。擴展環3281俯視下具有環狀形狀。Z方向移動機構3282係以使擴展環3281於Z1方向或Z2方向上移動之方式構成。Z方向移動機構3282例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。Z方向移動機構3282安裝於基底205。擴展環3281之上端部3281a於擴展狀態下,保持藉由Z方向移動機構3282配置於規定高度位置Hd之狀態。The expansion ring 3281 is configured to expand (expand) the sheet member W2 by supporting the sheet member W2 from the Z2 direction. The expansion ring 3281 has a ring shape when viewed from above. The Z-direction moving mechanism 3282 is configured to move the expansion ring 3281 in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 3282 includes, for example, a driving portion having a linear conveyor module, or a motor with a ball screw and an encoder. The Z-direction moving mechanism 3282 is mounted on the base 205. In the expanded state, the upper end portion 3281a of the expansion ring 3281 is maintained at a specified height position Hd by the Z-direction moving mechanism 3282.
<施壓部> 施壓部3213係以於使片狀構件W2擴展後,自Z2方向側擠壓晶圓W1,藉此沿著改質層進而分割晶圓W1之方式構成。具體而言,施壓部3213具有擠壓部3213a、X方向移動機構3213b、Z方向移動機構3213c及旋動機構3213d。 <Pressure-applying section> The pressure-applying section 3213 is configured to squeeze the wafer W1 from the Z2 direction after expanding the sheet-shaped member W2, thereby dividing the wafer W1 along the reformed layer. Specifically, the pressure-applying section 3213 has a squeezing section 3213a, an X-direction moving mechanism 3213b, a Z-direction moving mechanism 3213c, and a rotating mechanism 3213d.
擠壓部3213a係以在藉由Z方向移動機構3213c於Z1方向上移動後,經由片狀構件W2自Z2方向側擠壓晶圓W1,同時藉由旋動機構3213d及X方向移動機構3213b移動,藉此使晶圓W1產生彎曲應力而沿著改質層分割晶圓W1之方式構成。擠壓部3213a為施壓器。擠壓部3213a安裝於旋動機構3213d之Z1方向側之端部。Z方向移動機構3213c係以使旋動機構3213d於Z1方向或Z2方向上移動之方式構成。Z方向移動機構3213c例如具有汽缸。Z方向移動機構3213c安裝於X方向移動機構3213b之Z1方向側之端部。X方向移動機構3213b例如包含具有線性輸送器模組、或附滾珠螺桿及編碼器之馬達之驅動部。X方向移動機構3213b安裝於基底205之Z1方向側之端部。The extrusion part 3213a is configured so that after the Z-direction moving mechanism 3213c moves in the Z1 direction, the wafer W1 is squeezed from the Z2 direction side through the sheet member W2, and the wafer W1 is simultaneously moved by the rotating mechanism 3213d and the X-direction moving mechanism 3213b, thereby generating bending stress on the wafer W1 and dividing the wafer W1 along the modified layer. The extrusion part 3213a is a pressure applicator. The extrusion part 3213a is mounted on the end of the rotating mechanism 3213d on the Z1 direction side. The Z-direction moving mechanism 3213c is configured so that the rotating mechanism 3213d moves in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 3213c has, for example, a cylinder. The Z-direction moving mechanism 3213c is mounted on the end of the X-direction moving mechanism 3213b on the Z1 direction side. The X-direction moving mechanism 3213b includes, for example, a driving part having a linear conveyor module or a motor with a ball screw and an encoder. The X-direction moving mechanism 3213b is mounted on the end of the base 205 on the Z1 direction side.
施壓部3213中,使擠壓部3213a在藉由Z方向移動機構3213c於Z1方向上移動後,經由片狀構件W2自Z2方向側擠壓晶圓W1,同時使擠壓部3213a藉由X方向移動機構3213b於Y方向上移動,藉此分割晶圓W1。又,施壓部3213中,於擠壓部3213a之Y方向上之移動結束後,使擠壓部3213a藉由旋動機構3213d旋動90度。又,施壓部3213中,於擠壓部3213a旋動90度後,使擠壓部3213a經由片狀構件W2自Z2方向側擠壓晶圓W1,同時使擠壓部3213a藉由X方向移動機構3213b於X方向上移動,藉此分割晶圓W1。In the pressurizing part 3213, after the squeezing part 3213a is moved in the Z1 direction by the Z-direction moving mechanism 3213c, the wafer W1 is squeezed from the Z2 direction side through the sheet member W2, and at the same time, the squeezing part 3213a is moved in the Y direction by the X-direction moving mechanism 3213b, thereby dividing the wafer W1. In addition, in the pressurizing part 3213, after the squeezing part 3213a is moved in the Y direction, the squeezing part 3213a is rotated 90 degrees by the rotating mechanism 3213d. In the pressing part 3213, after the pressing part 3213a rotates 90 degrees, the pressing part 3213a presses the wafer W1 from the Z2 direction through the sheet member W2, and at the same time, the pressing part 3213a moves in the X direction through the X direction moving mechanism 3213b, thereby dividing the wafer W1.
(半導體晶圓之加工裝置之控制體系之構成) 如圖18所示,半導體晶圓之加工裝置300具備第1控制部101、第2控制部102、第3控制部103、第4控制部3104、第5控制部3105、第6控制部3106、第7控制部3107、第8控制部3108、第9控制部3109、擴展控制運算部3110、處理控制運算部3111、切割控制運算部3112及記憶部3113。再者,第1控制部101、第2控制部102、第3控制部103、第5控制部3105、第6控制部3106、第7控制部3107、第8控制部3108、第9控制部3109、擴展控制運算部3110、處理控制運算部3111、切割控制運算部3112及記憶部3113分別為與第1實施方式之第1控制部101、第2控制部102、第3控制部103、第4控制部104、第5控制部105、第6控制部106、第7控制部107、第8控制部108、擴展控制運算部109、處理控制運算部110、切割控制運算部111及記憶部112相同之構成,因此省略說明。 (Composition of control system of semiconductor wafer processing device) As shown in FIG18, the semiconductor wafer processing device 300 has a first control unit 101, a second control unit 102, a third control unit 103, a fourth control unit 3104, a fifth control unit 3105, a sixth control unit 3106, a seventh control unit 3107, an eighth control unit 3108, a ninth control unit 3109, an expansion control operation unit 3110, a processing control operation unit 3111, a cutting control operation unit 3112, and a memory unit 3113. Furthermore, the first control unit 101, the second control unit 102, the third control unit 103, the fifth control unit 3105, the sixth control unit 3106, the seventh control unit 3107, the eighth control unit 3108, the ninth control unit 3109, the expansion control operation unit 3110, the processing control operation unit 3111, the cutting control operation unit 3112 and the memory unit 3113 are respectively the same as the first control unit 101, the second control unit 102, the third control unit 103, the fourth control unit 104, the fifth control unit 105, the sixth control unit 106, the seventh control unit 107, the eighth control unit 108, the expansion control operation unit 109, the processing control operation unit 110, the cutting control operation unit 111 and the memory unit 112 of the first embodiment, and therefore the description thereof is omitted.
第4控制部3104係以控制擴展部3208之方式構成。第4控制部3104包含CPU、具有ROM及RAM等之記憶部。再者,第4控制部3104亦可包含電壓被阻斷後依然保持所記憶之資訊之HDD等作為記憶部。The fourth control unit 3104 is configured to control the expansion unit 3208. The fourth control unit 3104 includes a CPU, a memory unit including a ROM and a RAM, etc. Furthermore, the fourth control unit 3104 may include a HDD or the like as a memory unit that retains the stored information even after the voltage is cut off.
(半導體晶片製造處理) 以下,參照圖19及圖20,對半導體晶圓之加工裝置300之整體動作進行說明。 (Semiconductor wafer manufacturing process) Below, the overall operation of the semiconductor wafer processing device 300 is described with reference to FIG. 19 and FIG. 20.
步驟S1~步驟S6、步驟S8及步驟S11係分別與第1實施方式之半導體晶片製造處理之步驟S1~步驟S6、步驟S8及步驟S11相同之處理,因此省略說明。Steps S1 to S6, step S8, and step S11 are respectively the same as steps S1 to S6, step S8, and step S11 of the semiconductor chip manufacturing process of the first embodiment, and thus their description is omitted.
步驟S307中,藉由擴展部3208擴展片狀構件W2。即,擴展環3281藉由Z方向移動機構3282於Z1方向上移動。使晶圓環構造體W以固持於夾持部214之狀態,藉由Z方向移動機構214b於Z2方向上移動。然後,使片狀構件W2抵接於擴展環3281,並且藉由擴展環3281加以拉伸,藉此使之擴展。從而,將晶圓W1沿著分割線(改質層)分割。In step S307, the sheet-like member W2 is expanded by the expansion part 3208. That is, the expansion ring 3281 is moved in the Z1 direction by the Z-direction moving mechanism 3282. The wafer ring structure W is moved in the Z2 direction by the Z-direction moving mechanism 214b while being held by the clamping part 214. Then, the sheet-like member W2 is brought into contact with the expansion ring 3281 and stretched by the expansion ring 3281, thereby expanding. Thus, the wafer W1 is divided along the dividing line (modified layer).
如圖20所示,步驟S309中,藉由熱收縮部211加熱片狀構件W2,使之收縮,並且一面藉由紫外線照射部212對片狀構件W2照射紫外線Ut,一面使夾持部214上升。此時,吸氣部210c被加熱而吸入片狀構件W2附近之空氣。步驟S310中,使晶圓環構造體W藉由夾持部214向施壓部3213移動。即,使晶圓環構造體W以固持於夾持部214之狀態,藉由Y方向移動機構214c於Y2方向上移動。As shown in FIG. 20 , in step S309, the sheet member W2 is heated by the heat shrinking section 211 to shrink it, and the sheet member W2 is irradiated with ultraviolet rays Ut by the ultraviolet irradiation section 212 while the clamping section 214 is raised. At this time, the suction section 210c is heated to suck in the air near the sheet member W2. In step S310, the wafer ring structure W is moved toward the pressure applying section 3213 by the clamping section 214. That is, the wafer ring structure W is moved in the Y2 direction by the Y-direction moving mechanism 214c while being fixed in the clamping section 214.
步驟S311中,當晶圓環構造體W移動至施壓部3213後,藉由施壓部3213擠壓晶圓W1。藉此,藉由施壓部3213進而分割晶圓W1。In step S311, after the wafer ring structure W moves to the pressing part 3213, the pressing part 3213 presses the wafer W1. Thus, the pressing part 3213 further divides the wafer W1.
此處,第2實施方式中,如圖15所示,提昇手部203係以位在切割裝置1與擴展本體部200之間之方式配置。具體而言,提昇手部203於X方向上,配置於切割裝置1之X1方向側。又,提昇手部203於X方向上,配置於擴展本體部200之X2方向側。Here, in the second embodiment, as shown in FIG. 15 , the lifting hand 203 is disposed between the cutting device 1 and the extension body 200. Specifically, the lifting hand 203 is disposed on the X1 direction side of the cutting device 1 in the X direction. Also, the lifting hand 203 is disposed on the X2 direction side of the extension body 200 in the X direction.
又,第2實施方式中,如圖17所示,進行經過分割之晶圓W1之破裂之施壓部3213於前後方向(Y方向)上,配置於晶圓冷卻位置P4之冷卻單元207與晶圓加熱位置P5之熱收縮部211之間。Furthermore, in the second embodiment, as shown in FIG. 17 , the pressure applying portion 3213 for breaking the divided wafer W1 is disposed in the front-rear direction (Y direction) between the cooling unit 207 at the wafer cooling position P4 and the heat shrinking portion 211 at the wafer heating position P5.
(第2實施方式之效果) 第2實施方式中,能獲得如下所述之效果。 (Effects of the second implementation method) In the second implementation method, the following effects can be obtained.
第2實施方式中,與第1實施方式同樣地,能對切割裝置1及擴展本體部200中之一者,不經由切割裝置1及擴展本體部200中之另一者地自晶圓盒部202直接供給晶圓W1,因此進行一部分加工處理時,能獨立地進行加工處理。其結果,即便只進行複數個加工處理中之一部分加工處理時,亦能效率良好地進行晶圓W1之加工處理。又,連續地進行切割裝置1及擴展本體部200所實施之處理之情形時,藉由使晶圓於切割裝置1與擴展本體部200之間移動,能進行複數個加工處理。In the second embodiment, similarly to the first embodiment, the wafer W1 can be directly supplied from the wafer box 202 to one of the cutting device 1 and the extended body 200 without passing through the other of the cutting device 1 and the extended body 200, so that when a part of the processing is performed, the processing can be performed independently. As a result, even when only a part of the processing is performed among a plurality of processing, the processing of the wafer W1 can be performed efficiently. In addition, when the processing performed by the cutting device 1 and the extended body 200 is performed continuously, a plurality of processing can be performed by moving the wafer between the cutting device 1 and the extended body 200.
又,第2實施方式中,如上所述,具備進行經過分割之晶圓W1之破裂之施壓部3213,且施壓部3213於前後方向(Y方向)上,配置於晶圓冷卻位置P4之冷卻單元207與晶圓加熱位置P5之熱收縮部211之間。藉此,能於晶圓冷卻位置P4之冷卻單元207中冷卻晶圓W1後,一面使晶圓W1依序移動至施壓部3213及晶圓加熱位置P5之熱收縮部211,一面依序進行破裂及加熱處理。Furthermore, in the second embodiment, as described above, a pressurizing section 3213 for breaking the divided wafer W1 is provided, and the pressurizing section 3213 is disposed between the cooling unit 207 at the wafer cooling position P4 and the heat shrinking section 211 at the wafer heating position P5 in the front-rear direction (Y direction). Thus, after the wafer W1 is cooled in the cooling unit 207 at the wafer cooling position P4, the wafer W1 can be sequentially moved to the pressurizing section 3213 and the heat shrinking section 211 at the wafer heating position P5 while being broken and heated in sequence.
再者,第2實施方式之其他效果與上述第1實施方式之效果相同。Furthermore, other effects of the second embodiment are the same as those of the above-mentioned first embodiment.
[第3實施方式] 參照圖21,對第3實施方式之半導體晶圓之加工裝置400之構成進行說明。第3實施方式中,與第1及第2實施方式不同,作為進行與切割不同之加工之晶圓加工部,設置有研磨裝置。再者,第3實施方式中,對於與第1實施方式相同之構成,省略詳細說明。 [Third embodiment] Referring to FIG. 21 , the structure of the semiconductor wafer processing device 400 of the third embodiment is described. In the third embodiment, unlike the first and second embodiments, a polishing device is provided as a wafer processing unit for performing processing different from cutting. In addition, in the third embodiment, detailed descriptions of the same structures as the first embodiment are omitted.
(半導體晶圓之加工裝置) 如圖21所示,半導體晶圓之加工裝置400係對設置於晶圓環構造體W之晶圓W1進行加工之裝置。再者,半導體晶圓之加工裝置400係申請專利範圍中之「晶圓加工裝置」之一例。 (Semiconductor wafer processing device) As shown in FIG. 21, the semiconductor wafer processing device 400 is a device for processing the wafer W1 set in the wafer ring structure W. Furthermore, the semiconductor wafer processing device 400 is an example of a "wafer processing device" in the scope of the patent application.
又,半導體晶圓之加工裝置400具備切割裝置1、晶圓盒部202、提昇手部203、吸附手部204及研磨裝置410。將上下方向設為Z方向,將上方向設為Z1方向,並且將下方向設為Z2方向。將與Z方向正交之水平方向中之切割裝置1與研磨裝置410排列之方向設為X方向,將X方向中之研磨裝置410側設為X1方向,將X方向中之切割裝置1側設為X2方向。將水平方向中之與X方向正交之方向設為Y方向,將Y方向中之一側設為Y1方向,將Y方向中之另一側設為Y2方向。Furthermore, the semiconductor wafer processing device 400 includes a cutting device 1, a wafer box unit 202, a lifting hand 203, a suction hand 204, and a grinding device 410. The up-down direction is set as the Z direction, the up direction is set as the Z1 direction, and the down direction is set as the Z2 direction. The direction in which the cutting device 1 and the grinding device 410 are arranged in the horizontal direction orthogonal to the Z direction is set as the X direction, the grinding device 410 side in the X direction is set as the X1 direction, and the cutting device 1 side in the X direction is set as the X2 direction. The direction in the horizontal direction orthogonal to the X direction is set as the Y direction, one side in the Y direction is set as the Y1 direction, and the other side in the Y direction is set as the Y2 direction.
(切割裝置) 切割裝置1係以藉由沿著分割線(切割道)對晶圓W1照射具有透過性之波長之雷射,而形成改質層之方式構成。再者,切割裝置1係申請專利範圍中之「切割部」之一例。 (Cutting device) The cutting device 1 is configured to form a modified layer by irradiating a wafer W1 with a laser having a wavelength that is transparent along a dividing line (cutting road). The cutting device 1 is an example of a "cutting unit" in the scope of the patent application.
具體而言,切割裝置1包含基底11、卡盤工作台部12、雷射部13及攝像部14。Specifically, the cutting device 1 includes a base 11 , a chuck table portion 12 , a laser portion 13 and an imaging portion 14 .
(研磨裝置) 研磨裝置410係以研磨晶圓W1而對其進行加工之方式構成。再者,研磨裝置410係申請專利範圍中之「晶圓加工部」及「打磨部」之一例。 (Polishing device) The polishing device 410 is configured to process the wafer W1 by polishing it. Furthermore, the polishing device 410 is an example of a "wafer processing unit" and a "polishing unit" in the scope of the patent application.
研磨裝置410包含基底411、晶圓保持部412及研磨部413。The polishing device 410 includes a base 411 , a wafer holding portion 412 , and a polishing portion 413 .
<基底> 基底411係供設置晶圓保持部412及研磨部413之基材。 <Base> The base 411 is a substrate for setting up the wafer holding part 412 and the polishing part 413.
<晶圓保持部> 晶圓保持部412保持晶圓環構造體W。又,晶圓保持部412相對於提昇手部203,在晶圓之交接位置P6交接晶圓W1(晶圓環構造體W)。 <Wafer holding section> The wafer holding section 412 holds the wafer ring structure W. Furthermore, the wafer holding section 412 delivers the wafer W1 (wafer ring structure W) at the wafer delivery position P6 relative to the lifting hand section 203.
<研磨部> 研磨部413研磨保持於晶圓保持部412之晶圓W1。研磨部413配置於晶圓保持部412之上方側(Z1方向側)。 <Polishing section> The polishing section 413 polishes the wafer W1 held by the wafer holding section 412. The polishing section 413 is arranged on the upper side (Z1 direction side) of the wafer holding section 412.
此處,第3實施方式中,如圖21所示,提昇手部203係以位在切割裝置1與研磨裝置410之間之方式配置。具體而言,提昇手部203於X方向上,配置於切割裝置1之X1方向側。又,提昇手部203於X方向上,配置於研磨裝置410之X2方向側。Here, in the third embodiment, as shown in FIG. 21 , the lifting hand 203 is arranged between the cutting device 1 and the grinding device 410. Specifically, the lifting hand 203 is arranged on the X1 direction side of the cutting device 1 in the X direction. Also, the lifting hand 203 is arranged on the X2 direction side of the grinding device 410 in the X direction.
(第3實施方式之效果) 第3實施方式中,能獲得如下所述之效果。 (Effects of the third implementation method) In the third implementation method, the following effects can be obtained.
第3實施方式中,與第1實施方式同樣地,能對切割裝置1及研磨裝置410中之一者,不經由切割裝置1及研磨裝置410中之另一者地自晶圓盒部202直接供給晶圓W1,因此進行一部分加工處理時,能獨立地進行加工處理。其結果,即便只進行複數個加工處理中之一部分加工處理時,亦能效率良好地進行晶圓W1之加工處理。又,連續地進行切割裝置1及研磨裝置410所實施之處理之情形時,藉由使晶圓於切割裝置1與研磨裝置410之間移動,能進行複數個加工處理。In the third embodiment, similarly to the first embodiment, the wafer W1 can be directly supplied from the wafer box 202 to one of the cutting device 1 and the grinding device 410 without passing through the other of the cutting device 1 and the grinding device 410, so that when a part of the processing is performed, the processing can be performed independently. As a result, even when only a part of the processing is performed among a plurality of processing, the processing of the wafer W1 can be performed efficiently. In addition, when the processing performed by the cutting device 1 and the grinding device 410 is performed continuously, a plurality of processing can be performed by moving the wafer between the cutting device 1 and the grinding device 410.
又,第3實施方式中,如上所述,研磨裝置410研磨晶圓。藉此,能單獨或連續地對晶圓W1進行切割及研磨之加工處理。In the third embodiment, as described above, the polishing device 410 polishes the wafer. Thus, the wafer W1 can be cut and polished individually or continuously.
再者,第3實施方式之其他效果與上述第1實施方式之效果相同。Furthermore, other effects of the third embodiment are the same as those of the first embodiment described above.
[變化例] 再者,此次所揭示之實施方式所有方面皆為例示,不應認為其具有限制性。本發明之範圍不由上述實施方式之說明提示,而由申請專利範圍提示,進而包含與申請專利範圍等同之含義及範圍內之所有變更(變化例)。 [Variations] Furthermore, all aspects of the embodiments disclosed this time are illustrative and should not be considered restrictive. The scope of the present invention is not indicated by the description of the embodiments above, but by the scope of the patent application, and further includes all changes (variations) within the meaning and scope equivalent to the scope of the patent application.
例如,第1及第2實施方式中,示出了設置有對晶圓進行切割之切割裝置、及分割晶圓之擴展本體部之構成之例,第3實施方式中,示出了設置有對晶圓進行切割之切割裝置、及研磨晶圓之研磨裝置之構成之例,但本發明並不限於此。於本發明中,亦可設置有對晶圓進行切割之切割裝置、分割晶圓之擴展本體部、及研磨晶圓之研磨裝置。For example, the first and second embodiments show an example of a structure in which a cutting device for cutting a wafer and an extended body for splitting a wafer are provided, and the third embodiment shows an example of a structure in which a cutting device for cutting a wafer and a polishing device for grinding a wafer are provided, but the present invention is not limited thereto. In the present invention, a cutting device for cutting a wafer, an extended body for splitting a wafer, and a polishing device for grinding a wafer may also be provided.
上述第1~第3實施方式中,示出了切割裝置對晶圓照射雷射,使之產生龜裂而進行切割之構成之例,但本發明並不限於此。於本發明中,切割裝置可藉由雷射之照射切斷晶圓,亦可藉由刀片切斷晶圓。In the first to third embodiments, the dicing device irradiates the wafer with laser light to cause cracks and then dicing, but the present invention is not limited thereto. In the present invention, the dicing device can sever the wafer by irradiating the laser light or by using a blade.
上述第1~第3實施方式中,示出了擴張維持構件具有蓋部之例,但本發明並不限於此。於本發明中,擴張維持構件亦可不具有蓋部。In the first to third embodiments described above, the expansion and maintaining member has an example with a cover portion, but the present invention is not limited thereto. In the present invention, the expansion and maintaining member may not have a cover portion.
上述第1及第2實施方式中,示出了擴展裝置包含紫外線照射部之例,但本發明並不限於此。於本發明中,擴展裝置亦可不包含紫外線照射部。In the first and second embodiments described above, the expansion device includes an ultraviolet irradiation unit, but the present invention is not limited thereto. In the present invention, the expansion device may not include an ultraviolet irradiation unit.
上述第1及第2實施方式中,示出了擴展裝置包含施壓部之例,但本發明並不限於此。於本發明中,擴展裝置亦可不包含施壓部。In the first and second embodiments described above, an example in which the expansion device includes a pressure applying portion is shown, but the present invention is not limited thereto. In the present invention, the expansion device may not include a pressure applying portion.
又,上述第1~第3實施方式中,為便於說明,所示之例為:使用按照處理流程依序進行處理之流程驅動型之流程圖,來說明控制處理;但本發明並不限於此。於本發明中,亦可藉由以事件為單位執行處理之事件驅動型(事件從動型)之處理,來進行擴展控制運算部之控制處理。該情形時,可採用完全事件驅動型來進行處理,亦可將事件驅動與流程驅動組合來進行處理。In addition, in the first to third embodiments, for the sake of convenience, the examples shown are: using a flow chart of a process-driven type in which processing is performed in sequence according to the processing flow to explain the control processing; however, the present invention is not limited to this. In the present invention, the control processing of the extended control operation unit can also be performed by an event-driven type (event-driven type) processing in which processing is performed in units of events. In this case, a complete event-driven type can be used for processing, and a combination of event-driven and process-driven can also be used for processing.
1:切割裝置 2:擴展裝置 11:基底 12:卡盤工作台部 12a:吸附部 12b:夾持部 12c:旋動機構 12d:工作台移動機構 13:雷射部 13a:雷射照射部 13b:安裝構件 13c:Z方向移動機構 14:攝像部 14a:高解析度相機 14b:廣角相機 14c:Z方向移動機構 14d:Z方向移動機構 100:半導體晶圓之加工裝置 101:第1控制部 102:第2控制部 103:第3控制部 104:第4控制部 105:第5控制部 106:第6控制部 107:第7控制部 108:第8控制部 109:擴展控制運算部 110:處理控制運算部 111:切割控制運算部 112:記憶部 121:X方向移動機構 122:Y方向移動機構 200:擴展本體部 201:基底 202:晶圓盒部 202a:晶圓盒 202b:Z方向移動機構 202c:載置部 203:提昇手部 203a:Y方向移動機構 203b:提昇手 204:吸附手部 204a:X方向移動機構 204b:Z方向移動機構 204c:吸附手 205:基底 206:冷氣供給部 206a:供給部本體 206b:冷氣供給口 206c:移動機構 207:冷卻單元 207a:冷卻構件 207b:Z方向移動機構 208:擴展部 209:基底 210:擴張維持構件 210a:擠壓環部 210b:蓋部 210c:吸氣部 210d:Z方向移動機構 211:熱收縮部 211a:加熱環 211b:Z方向移動機構 212:紫外線照射部 213:施壓部 213a:擠壓部 213b:Z方向移動機構 213c:X方向移動機構 213d:旋動機構 214:夾持部 214a:固持部 214b:Z方向移動機構 214c:Y方向移動機構 271:冷卻體 272:珀爾帖元件 281:擴展環 300:半導體晶圓之加工裝置 302:擴展裝置 400:半導體晶圓之加工裝置 410:研磨裝置 411:基底 412:晶圓保持部 413:研磨部 3104:第4控制部 3105:第5控制部 3106:第6控制部 3107:第7控制部 3108:第8控制部 3109:第9控制部 3110:擴展控制運算部 3111:處理控制運算部 3112:切割控制運算部 3113:記憶部 3208:擴展部 3213:施壓部 3213a:擠壓部 3213b:X方向移動機構 3213c:Z方向移動機構 3213d:旋動機構 3281:擴展環 3281a:擴展環之上端部 3282:Z方向移動機構 Ch:半導體晶片 P1:交接位置 P2:交接位置 P3:交接位置 P4:交接位置 P5:交接位置 Ut:紫外線 W:晶圓環構造體 W1:晶圓 W2:片狀構件 W21:片狀構件之上表面 W3:環狀構件 1: Cutting device 2: Expanding device 11: Base 12: Chuck table 12a: Adsorption unit 12b: Clamping unit 12c: Rotation mechanism 12d: Table moving mechanism 13: Laser unit 13a: Laser irradiation unit 13b: Mounting component 13c: Z-direction moving mechanism 14: Camera unit 14a: High-resolution camera 14b: Wide-angle camera 14c: Z-direction moving mechanism 14d: Z-direction moving mechanism 100: Semiconductor wafer processing device 101: First control unit 102: Second control unit 103: Third control unit 104: Fourth control unit 105: Fifth control unit 106: Sixth control unit 107: 7th control unit 108: 8th control unit 109: expansion control operation unit 110: processing control operation unit 111: cutting control operation unit 112: memory unit 121: X-direction moving mechanism 122: Y-direction moving mechanism 200: expansion body unit 201: base 202: wafer box unit 202a: wafer box 202b: Z-direction moving mechanism 202c: loading unit 203: lifting hand unit 203a: Y-direction moving mechanism 203b: lifting hand 204: suction hand unit 204a: X-direction moving mechanism 204b: Z-direction moving mechanism 204c: suction hand 205: base 206: Cooling air supply unit 206a: Supply unit body 206b: Cooling air supply port 206c: Moving mechanism 207: Cooling unit 207a: Cooling member 207b: Z-direction moving mechanism 208: Expansion unit 209: Base 210: Expansion holding member 210a: Squeezing ring 210b: Cover 210c: Air suction unit 210d: Z-direction moving mechanism 211: Heat shrinking unit 211a: Heating ring 211b: Z-direction moving mechanism 212: Ultraviolet irradiation unit 213: Pressing unit 213a: Squeezing unit 213b: Z-direction moving mechanism 213c: X-direction moving mechanism 213d: Rotating mechanism 214: Clamping part 214a: Holding part 214b: Z-direction moving mechanism 214c: Y-direction moving mechanism 271: Cooling body 272: Peltier element 281: Expanding ring 300: Semiconductor wafer processing device 302: Expanding device 400: Semiconductor wafer processing device 410: Grinding device 411: Base 412: Wafer holding part 413: Grinding part 3104: 4th control part 3105: 5th control part 3106: 6th control part 3107: 7th control part 3108: 8th control unit 3109: 9th control unit 3110: expansion control operation unit 3111: processing control operation unit 3112: cutting control operation unit 3113: memory unit 3208: expansion unit 3213: pressure unit 3213a: extrusion unit 3213b: X-direction moving mechanism 3213c: Z-direction moving mechanism 3213d: rotation mechanism 3281: expansion ring 3281a: upper end of expansion ring 3282: Z-direction moving mechanism Ch: semiconductor chip P1: handover position P2: handover position P3: handover position P4: handover position P5: handover position Ut: ultraviolet light W: Wafer ring structure W1: Wafer W2: Sheet component W21: Upper surface of sheet component W3: Ring component
圖1係表示第1實施方式之設置有切割裝置及擴展裝置的半導體晶圓之加工裝置之俯視圖。 圖2係表示於第1實施方式之半導體晶圓之加工裝置中施以加工之晶圓環構造體之俯視圖。 圖3係沿著圖2之III-III線之剖視圖。 圖4係第1實施方式之與擴展裝置鄰接而配置之切割裝置之俯視圖。 圖5係第1實施方式之與擴展裝置鄰接而配置之切割裝置的自Y2方向側觀察之側視圖。 圖6係第1實施方式之擴展裝置之俯視圖。 圖7係第1實施方式之擴展裝置之自Y2方向側觀察之側視圖。 圖8係第1實施方式之擴展裝置之自X1方向側觀察之側視圖。 圖9係表示第1實施方式之半導體晶圓之加工裝置的控制體系之構成之方塊圖。 圖10係第1實施方式之半導體晶圓之加工裝置的半導體晶片製造處理之前半部分之流程圖。 圖11係第1實施方式之半導體晶圓之加工裝置的半導體晶片製造處理之後半部分之流程圖。 圖12係表示第1實施方式之擴展裝置中夾持部配置於上升位置之狀態之側視圖。 圖13係表示第1實施方式之擴展裝置中夾持部配置於下降位置之狀態之側視圖。 圖14係表示第1實施方式之擴展裝置中紫外線照射部照射了紫外線之狀態之側視圖。 圖15係表示第2實施方式之設置有切割裝置及擴展裝置的半導體晶圓之加工裝置之俯視圖。 圖16係第2實施方式之設置有切割裝置及擴展裝置的半導體晶圓之加工裝置之自Y2方向側觀察之側視圖。 圖17係第2實施方式之設置有切割裝置及擴展裝置的半導體晶圓之加工裝置之自X1方向側觀察之側視圖。 圖18係表示第2實施方式之半導體晶圓之加工裝置的控制體系之構成之方塊圖。 圖19係第2實施方式之半導體晶圓之加工裝置的半導體晶片製造處理之前半部分之流程圖。 圖20係第2實施方式之半導體晶圓之加工裝置的半導體晶片製造處理之後半部分之流程圖。 圖21係表示第3實施方式之設置有切割裝置及研磨裝置的半導體晶圓之加工裝置之俯視圖。 FIG. 1 is a top view of a semiconductor wafer processing device provided with a cutting device and an expansion device according to the first embodiment. FIG. 2 is a top view of a wafer ring structure processed in the semiconductor wafer processing device according to the first embodiment. FIG. 3 is a cross-sectional view along line III-III of FIG. 2. FIG. 4 is a top view of a cutting device arranged adjacent to the expansion device according to the first embodiment. FIG. 5 is a side view of a cutting device arranged adjacent to the expansion device according to the first embodiment, as viewed from the Y2 direction side. FIG. 6 is a top view of the expansion device according to the first embodiment. FIG. 7 is a side view of the expansion device according to the first embodiment, as viewed from the Y2 direction side. FIG8 is a side view of the expansion device of the first embodiment viewed from the X1 direction. FIG9 is a block diagram showing the structure of the control system of the semiconductor wafer processing device of the first embodiment. FIG10 is a flow chart of the first half of the semiconductor wafer manufacturing process of the semiconductor wafer processing device of the first embodiment. FIG11 is a flow chart of the second half of the semiconductor wafer manufacturing process of the semiconductor wafer processing device of the first embodiment. FIG12 is a side view showing a state in which the clamping part of the expansion device of the first embodiment is configured in an ascending position. FIG13 is a side view showing a state in which the clamping part of the expansion device of the first embodiment is configured in a descending position. FIG. 14 is a side view showing a state where the ultraviolet irradiation part in the expansion device of the first embodiment irradiates ultraviolet rays. FIG. 15 is a top view showing a semiconductor wafer processing device provided with a cutting device and an expansion device of the second embodiment. FIG. 16 is a side view of the semiconductor wafer processing device provided with a cutting device and an expansion device of the second embodiment viewed from the Y2 direction. FIG. 17 is a side view of the semiconductor wafer processing device provided with a cutting device and an expansion device of the second embodiment viewed from the X1 direction. FIG. 18 is a block diagram showing the structure of the control system of the semiconductor wafer processing device of the second embodiment. FIG. 19 is a flow chart of the first half of the semiconductor wafer manufacturing process of the semiconductor wafer processing device of the second embodiment. FIG. 20 is a flow chart of the second half of the semiconductor wafer manufacturing process of the semiconductor wafer processing device of the second embodiment. FIG. 21 is a top view of the semiconductor wafer processing device provided with a cutting device and a grinding device of the third embodiment.
1:切割裝置 1: Cutting device
2:擴展裝置 2: Expansion device
11:基底 11: Base
12:卡盤工作台部 12: Chuck workbench
12a:吸附部 12a: Adsorption part
12b:夾持部 12b: Clamping part
12d:工作台移動機構 12d: Workbench moving mechanism
13:雷射部 13: Laser Department
13a:雷射照射部 13a: Laser irradiation unit
13b:安裝構件 13b: Installation components
14:攝像部 14: Camera Department
14a:高解析度相機 14a: High-resolution camera
14b:廣角相機 14b: Wide-angle camera
100:半導體晶圓之加工裝置 100: Semiconductor wafer processing equipment
121:X方向移動機構 121: X-direction moving mechanism
122:Y方向移動機構 122: Y direction moving mechanism
200:擴展本體部 200: Expand the headquarters
201:基底 201: Base
202:晶圓盒部 202: Wafer box department
203:提昇手部 203: Lifting the hands
204:吸附手部 204: Adsorption of hands
204a:X方向移動機構 204a: X-direction moving mechanism
204b:Z方向移動機構 204b: Z-direction moving mechanism
204c:吸附手 204c: Suction Hand
205:基底 205: Base
207:冷卻單元 207: Cooling unit
208:擴展部 208: Expansion Department
210:擴張維持構件 210: Expansion and maintenance components
213:施壓部 213: Pressure application part
214:夾持部 214: Clamping part
P1:交接位置 P1: Handover position
P2:交接位置 P2: Handover position
P3:交接位置 P3: Handover position
P4:交接位置 P4: Handover position
P5:交接位置 P5: Handover position
W:晶圓環構造體 W: Wafer ring structure
Claims (14)
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| WOPCT/JP2022/019104 | 2022-04-27 | ||
| PCT/JP2022/019104 WO2023209871A1 (en) | 2022-04-27 | 2022-04-27 | Wafer processing apparatus, method for manufacturing semiconductor chip, and semiconductor chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007235068A (en) * | 2006-03-03 | 2007-09-13 | Tokyo Seimitsu Co Ltd | Wafer processing method |
| JP2010125488A (en) * | 2008-11-28 | 2010-06-10 | Apic Yamada Corp | Cutting apparatus |
| JP2021153113A (en) * | 2020-03-24 | 2021-09-30 | 株式会社ディスコ | Expansion device and device chip manufacturing method |
| TW202215571A (en) * | 2020-09-11 | 2022-04-16 | 日商捷進科技有限公司 | Die bonding device and method of manufacturing semiconductor device |
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| JP3415069B2 (en) * | 1999-05-14 | 2003-06-09 | 株式会社東京精密 | Dicing equipment |
| JP2020061453A (en) * | 2018-10-10 | 2020-04-16 | 株式会社ディスコ | Package substrate processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007235068A (en) * | 2006-03-03 | 2007-09-13 | Tokyo Seimitsu Co Ltd | Wafer processing method |
| JP2010125488A (en) * | 2008-11-28 | 2010-06-10 | Apic Yamada Corp | Cutting apparatus |
| JP2021153113A (en) * | 2020-03-24 | 2021-09-30 | 株式会社ディスコ | Expansion device and device chip manufacturing method |
| TW202215571A (en) * | 2020-09-11 | 2022-04-16 | 日商捷進科技有限公司 | Die bonding device and method of manufacturing semiconductor device |
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| WO2023209871A1 (en) | 2023-11-02 |
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