TWI852671B - Invisible light sensing device - Google Patents

Abstract

An invisible light sensing device includes scanning lines, reading lines and sensing pixels. The sensing pixels are arranged into sensing pixel columns and sensing pixel rows. Control terminals of switching elements of sensing pixels of the mth sensing pixel row are electrically connected to the kth scanning line and the (k+1)th scanning line respectively. First ends of switching elements of sensing pixels of the nth sensing pixel column and first ends of switching elements of sensing pixels of the (n+1)th sensing pixel column are electrically connected to a single reading line.

Description

Invisible light sensor

The present invention relates to a sensing device, and in particular to an invisible light sensing device.

Photo sensors have a wide range of applications. The more common ones are image sensors used in digital cameras or camcorders, such as complementary metal-oxide-semiconductor (CMOS) image sensors or charge-coupled devices (CCD). In addition, non-visible light (such as X-ray) sensors used in security inspections, industrial inspections or medical examinations have become a key development project for related manufacturers due to their high added value.

Generally speaking, X-ray sensors used for medical testing or surgery must have a higher sensing frequency so that medical personnel can obtain the real-time status of the patient's body from it to increase the accuracy of the test and the success rate of the operation. Therefore, most of these sensors use thin film transistors with high electron mobility as switching elements. The sensing pixels of the photosensor include a photosensitive element, a switching element electrically connected to the photosensitive element, and a readout line electrically connected to the switch element, wherein the readout line is used to transmit the electrical signal from the photosensitive element. When the number of sensing pixels is greater, the photosensor also needs to be equipped with more readout lines. When the number of readout lines is greater, the number of driver chips required is also greater. However, the selling price of driver chips is high, and the more driver chips are used, the more unfavorable it is to reduce the cost of photo sensors.

The present invention provides an invisible light sensing device with low cost.

The invisible light sensing device of the present invention includes a plurality of scanning lines, a plurality of reading lines and a plurality of sensing pixels. The plurality of scanning lines extend in a first direction. The plurality of reading lines extend in a second direction. The first direction and the second direction are interlaced. The plurality of sensing pixels are electrically connected to the plurality of scanning lines and the plurality of reading lines. Each sensing pixel includes a switching element, a first electrode electrically connected to the switching element, a second electrode disposed opposite to the first electrode, a photoelectric conversion pattern disposed between the first electrode and the second electrode, and a wavelength conversion layer superimposed on the photoelectric conversion pattern. The plurality of sensing pixels are arranged into a plurality of sensing pixel rows and a plurality of sensing pixel columns along the first direction and the second direction. The plurality of sensing pixels in the same sensing pixel column are arranged in the first direction. Multiple sensing pixels of the same sensing pixel row are arranged in the second direction. The multiple sensing pixel rows include the nth sensing pixel row and the (n+1)th sensing pixel row arranged in sequence in the first direction. The multiple sensing pixel columns include the mth sensing pixel column. The multiple scanning lines include the kth scanning line and the (k+1)th scanning line arranged in sequence in the second direction. n, m and k are positive integers. The multiple control ends of the multiple switch elements of the multiple sensing pixels of the mth sensing pixel row are electrically connected to the kth scanning line and the (k+1)th scanning line respectively. The multiple first ends of the multiple switch elements of the multiple sensing pixels of the nth sensing pixel row and the multiple first ends of the multiple switch elements of the multiple sensing pixels of the (n+1)th sensing pixel row are electrically connected to the same read line.

10, 10A, 10B: Invisible light sensing device

110: Substrate

120: Buffer layer

130: Semiconductor pattern

140: Gate insulation layer

150: Control terminal

160: Interlayer insulation layer

172: First end

174: Second end

180, 220, 240, 260: Insulation layer

180a, 220a, 230a, 230b, 240a, 240b,: Opening

190: First electrode

200: Photoelectric conversion layer

210: Second electrode

230, 270: Flat layer

250: Conductive layer

280: Wavelength conversion layer

290: Water and air barrier layer

C, _Cn , Cn ₊₁ , Cn ₊₂ : sensing pixel rows

CL: common line

d1: first direction

d2: Second direction

GL, GL _k , GL _k+1 , GL _k+2 , GL _k+3 : Scanning lines

PX, PXA, PXB, PXC, PXD, PXE, PXF: sensing pixels

PD: Photosensitive element

RL, RL _i , RL _i+1 : Reading line

R, R _m , R _m+1 : sensing pixel rows

S _CL , S _RLi-A , S _RLi+1-C , S _RLi-B , S _RLi-D , S _RLi-F , S _GLk , S _GLk+1 , S _GLk+2 : signal

T: Switching element

t1: first time interval

t2: Second time period

t3: The third time period

I-I’: section line

Figure 1 is a schematic top view of an invisible light sensing device according to an embodiment of the present invention.

Figure 2 is a partially enlarged schematic diagram of an invisible light sensing device of an embodiment of the present invention.

Figure 3 is a schematic cross-sectional view of an invisible light sensing device according to an embodiment of the present invention.

4 shows signals of a common line, a signal read from a first sensing pixel by an i-th read line, a signal read from a first sensing pixel by an (i+1)-th read line, a signal read from a second sensing pixel by an i-th read line, a signal read from a third sensing pixel by an i-th read line RL _i, a signal read from a third sensing pixel by an (i+1)-th read line, a signal of a k-th scan line, a signal of a (k+1)-th scan line, and a signal of a (k+2)-th scan line according to an embodiment of the present invention.

Figure 5 is a top view schematic diagram of an invisible light sensing device of another embodiment of the present invention.

Figure 6 is a partial top view schematic diagram of an invisible light sensing device of another embodiment of the present invention.

As used herein, "about", "approximately", "essentially", or "substantially" include the stated value and the average value within an acceptable deviation range of a specific value determined by a person of ordinary skill in the art, taking into account the measurement in question and the specific amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or, for example, within ±30%, ±20%, ±15%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately", "essentially", or "substantially" can select a more acceptable deviation range or standard deviation based on the measured property, cutting property, or other property, and can apply to all properties without a single standard deviation.

In the accompanying drawings, the thickness of layers, films, panels, regions, etc., is exaggerated for clarity. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to another element, or an intermediate element may also exist. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intermediate elements. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, "electrical connection" may be the presence of other elements between two elements.

Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same element symbols are used in the drawings and description to represent the same or similar parts.

FIG. 1 is a schematic top view of an invisible light sensing device of an embodiment of the present invention. FIG. 2 is a partially enlarged schematic view of an invisible light sensing device of an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of an invisible light sensing device of an embodiment of the present invention. FIG. 3 corresponds to the section line I-I' of FIG. 2. FIG. 1 and FIG. 2 omit the wavelength conversion layer 280 of FIG. 3.

Referring to FIG. 1 , FIG. 2 and FIG. 3 , the invisible light sensing device 10 includes a substrate 110 and a plurality of sensing pixels PX disposed on the substrate 110 . Each sensing pixel PX includes a switch element T, a photosensitive element PD electrically connected to the switch element T, and a wavelength conversion layer 280 superimposed on the photosensitive element PD.

The switch element T may include a thin film transistor. For example, in the present embodiment, the method for forming the switch element T may include the following steps: sequentially forming a buffer layer 120, a semiconductor pattern 130, a gate insulating layer 140, a control terminal 150, an interlayer insulating layer 160, a first terminal 172, and a second terminal 174 on a substrate 110, wherein the first terminal 172 and the second terminal 174 penetrate the interlayer insulating layer 160 and the gate insulating layer 140 to be electrically connected to two different regions of the semiconductor pattern 130, respectively. In the present embodiment, the control terminal 150 of the switch element T may be selectively disposed above the semiconductor pattern 130 to form a top-gate thin film transistor (top-gate TFT). However, the present invention is not limited thereto. According to other embodiments, the control terminal 150 of the switch element T may also be disposed below the semiconductor pattern 130 to form a bottom-gate thin film transistor (bottom-gate TFT). In this embodiment, the material of the semiconductor pattern 130 is, for example, indium gallium zinc oxide (IGZO). However, the present invention is not limited thereto. According to other embodiments, other materials may also be used to make the semiconductor pattern 130.

In addition to the switch element T and the photosensitive element PD, the sensing pixel PX also includes a wavelength conversion layer 280 disposed on the light receiving side of the photosensitive element PD. The wavelength conversion layer 280 can convert the incident invisible light into visible light, and the photosensitive element PD is suitable for receiving the visible light and generating a corresponding electrical signal. For example, in this embodiment, the invisible light sensing device 10 can be used as a medical X-ray sensing panel. The material of the wavelength conversion layer 280 of the sensing pixel PX is, for example, cesium iodide (CsI), which can convert the incident X-rays into green light, and the photosensitive element PD is suitable for receiving the green light and generating a corresponding electrical signal, but the present invention is not limited to this.

In this embodiment, the method for forming the photosensitive element PD may include the following steps: forming an insulating layer 180, a first electrode 190, a photoelectric conversion layer 200 and a second electrode 210 on the switch element T in sequence. For example, in this embodiment, the material of the insulating layer 180 may be selected from inorganic materials (such as silicon oxide, silicon nitride, silicon oxynitride, other suitable materials or a stacked layer of at least two of the above materials), organic materials or a combination thereof; the material of the first electrode 190 may include metal, alloy, nitride of metal material, oxide of metal material, oxynitride of metal material, or other conductive materials with high reflectivity; the material of the second electrode 210 may include a transparent conductive material, such as indium tin oxide (ITO); but the present invention is not limited thereto.

In this embodiment, the photoelectric conversion layer 200 is, for example, a PIN junction structure formed by stacking a P-type doped layer, an intrinsic layer, and an N-type doped layer. However, the present invention is not limited thereto. In other embodiments, the photoelectric conversion layer 200 may also be a PN junction structure formed by stacking a P-type doped layer and an N-type doped layer, or a series structure in which a PN junction structure and a PIN junction structure are repeatedly arranged.

In this embodiment, the invisible light sensing device 10 further includes an insulating layer 220, a planar layer 230, an insulating layer 240, a conductive layer 250, an insulating layer 260, and a planar layer 270. The insulating layer 220 and the planar layer 230 sequentially cover the photosensitive element PD and the insulating layer 180. The insulating layer 240, the conductive layer 250, the insulating layer 260, and the planar layer 270 are sequentially disposed on the planar layer 230. In this embodiment, the conductive layer 250 may include a read line RL and a common line CL. The read line RL can be electrically connected to the first end 172 of the switch element T through the opening 240a of the insulating layer 240, the opening 230a of the planar layer 230, the opening 220a of the insulating layer 220, and the opening 180a of the insulating layer 180. The common line CL can be electrically connected to the second electrode 210 (marked in FIG. 2 ) of the photosensitive element PD through the opening 240b (marked in FIG. 2 ) of the insulating layer 240 and the opening 230b of the planar layer 230. The common line CL is used to transmit the bias signal required by the photosensitive element PD. The read line RL is used to transmit the electrical signal generated by the photosensitive element PD after receiving light.

In this embodiment, the materials of the insulating layer 220, the planar layer 230, the insulating layer 240 and the insulating layer 260 can be selected from inorganic materials (such as silicon oxide, silicon nitride, silicon oxynitride, other suitable materials or a stacked layer of at least two of the above materials), organic materials or a combination thereof. In the present embodiment, the material of the planar layer 270 can be selected from polyvinyl pyrrolidone (PVP), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA), ethylene-tetrafluoroethylene (ETFE), fluorinated ethylene propylene (FEP), polyvinylidene fluoride (PVDF), polyvinyl fluoride (PVF), ethylene chlorotrifluoroethylene (ECTFE), polytetrafluoroethylene (PTFE), perfluoroalkoxy (PFA) or other fluorine-based materials, but the present invention is not limited thereto.

In this embodiment, the wavelength conversion layer 280 can be disposed on the flat layer 270. In this embodiment, the invisible light sensing device 10 further includes a water-blocking and air-blocking layer 290 disposed on the wavelength conversion layer 280. For example, in this embodiment, the material of the water-blocking and air-blocking layer 290 can include aluminum, but the present invention is not limited thereto.

Referring to FIG. 1 , the invisible light sensing device 10 further includes a plurality of scanning lines GL and a plurality of reading lines RL, wherein the plurality of scanning lines GL extend in a first direction d1, and the plurality of reading lines RL extend in a second direction d2, wherein the first direction d1 and the second direction d2 intersect. For example, in this embodiment, the first direction d1 and the second direction d2 may be perpendicular to each other, but the present invention is not limited thereto. In this embodiment, the invisible light sensing device 10 further includes a plurality of common lines CL. For example, in this embodiment, the plurality of common lines CL may extend in the second direction d2, and the plurality of common lines CL and the plurality of reading lines RL may be substantially parallel, but the present invention is not limited thereto.

Please refer to Figures 1, 2 and 3, multiple sensing pixels PX are electrically connected to multiple scanning lines GL, multiple reading lines RL and multiple common lines CL. In detail, in this embodiment, the control end 150 of the switch element T of each sensing pixel PX is electrically connected to a corresponding scanning line GL, the first end 172 of the switch element T of each sensing pixel PX is electrically connected to a corresponding reading line RL, and the second electrode 210 of the photosensitive element PD of each sensing pixel PX is electrically connected to a corresponding common line CL.

Referring to FIG. 1 , a plurality of sensing pixels PX are arranged into a plurality of sensing pixel rows C and a plurality of sensing pixel columns R along a first direction d1 and a second direction d2. A plurality of sensing pixels PX of the same sensing pixel column R are arranged in the first direction d1, and a plurality of sensing pixels PX of the same sensing pixel row C are arranged in the second direction d2. The plurality of sensing pixel rows C include an nth sensing pixel row C _n , an (n+1)th sensing pixel row C _n+1 , and an (n+2)th sensing pixel row C _n+2 arranged in sequence in the first direction d1. The plurality of sensing pixel columns R include an mth sensing pixel column R _m and an (m+1)th sensing pixel column R _m+1 arranged in sequence in the second direction d2. The plurality of scanning lines GL include a kth scanning line GL _k , a (k+1)th scanning line GL _k+1 , a (k+2)th scanning line GL _k+2 , and a (k+3)th scanning line GL _k+3 arranged in sequence in the second direction d2. The plurality of reading lines RL include an i-th reading line RL _i and a (i+1)-th reading line RL _i+1 arranged in sequence in the first direction d1. n, m, k, and i are positive integers.

Referring to FIG. 1 and FIG. 2 , it is worth noting that the control terminals 150 of the switch elements T of the sensing pixels PX of the m-th sensing pixel row R _m are electrically connected to the k-th scanning line GL _k and the (k+1)-th scanning line GL _k+1 , respectively, and the first terminals 172 of the switch elements T of the sensing pixels PX of the n-th sensing pixel column C _n and the first terminals 172 of the switch elements T of the sensing pixels PX of the (n+1)-th sensing pixel column C _n+1 are electrically connected to the same read line RL (e.g., the i-th read line RL _i ). In other words, two adjacent sensing pixel columns C share the same read line RL. Thus, the number of readout lines RL of the invisible light sensing device 10 can be reduced, and thus the number of driver chips (not shown) electrically connected to the readout lines RL can be reduced. Since the number of driver chips (not shown) can be reduced (e.g., halved), the cost of the invisible light sensing device 10 can be significantly reduced.

In this embodiment, the sensing pixel PX of the m-th sensing pixel row R _m includes a plurality of first sensing pixels PXA, PXC and a second sensing pixel PXB. The second sensing pixel PXB is disposed between the plurality of first sensing pixels PXA, PXC. The plurality of control terminals 150 of the plurality of switch elements T of the plurality of first sensing pixels PXA, PXC are electrically connected to the k-th scanning line GL _k , and the control terminal 150 of the switch element T of the second sensing pixel PXB is electrically connected to the (k+1)-th scanning line GL _k+1 .

In this embodiment, the control terminals 150 of the switch elements T of the sensing pixels PX of the (m+1)th sensing pixel row R _m+1 are electrically connected to the (k+2)th scanning line GL _k+2 and the (k+3)th scanning line GL _{k+3 ,} respectively. In detail, in the present embodiment, the plurality of sensing pixels PX of the (m+1)th sensing pixel row R _m+1 include a plurality of third sensing pixels PXD, PXF and a fourth sensing pixel PXE, the fourth sensing pixel PXE is disposed between the plurality of third sensing pixels PXD, PXF, the plurality of control ends 150 of the plurality of switch elements T of the plurality of third sensing pixels PXD, PXF are electrically connected to the (k+2)th scanning line GL _k+2 , and the control end 150 of the switch element T of the fourth sensing pixel PXE is electrically connected to the (k+3)th scanning line GL _k+3 .

In the present embodiment, in the top view of the invisible light sensing device 10, the kth scanning line GL _k and the (k+1)th scanning line GL _k+1 are respectively located on opposite sides of the mth sensing pixel row R _m , the (k+2)th scanning line GL _k+2 and the (k+3)th scanning line GL _k+3 are respectively located on opposite sides of the (m+1)th sensing pixel row R _m+1 , and the (k+1)th scanning line GL _k+1 and the (k+2)th scanning line GL _k+2 are located between the mth sensing pixel row R _m and the (m+1)th sensing pixel row R _m+1 .

In the present embodiment, the first sensing pixel PXA and the third sensing pixel PXD belong to the nth sensing pixel row _Cn , the second sensing pixel PXB and the fourth sensing pixel PXE belong to the (n+1)th sensing pixel row Cn ₊₁ , the first sensing pixel PXC and the third sensing pixel PXF belong to the (n+2)th sensing pixel row Cn ₊₂ , the first ends 172 of the plurality of switch elements T of the first sensing pixel PXA, the third sensing pixel PXD, the second sensing pixel PXB and the fourth sensing pixel PXE are all electrically connected to the i-th read line _RLi , and the first ends 172 of the plurality of switch elements T of the first sensing pixel PXC and the third sensing pixel PXF are all electrically connected to the (i+1)-th read line RLi ₊₁ .

FIG. 4 shows a signal S _CL of a common line CL, a signal S _RLi-A read from a first sensing pixel PXA by an i-th read line RL _i , a signal S RLi+1-C read from a first sensing pixel PXC by an (i+1)-th read line RL _i+1 , a signal S RLi _-B read from a second sensing pixel PXB by an i-th read line RL _i , a signal S _RLi-D read from a third sensing pixel PXD by an i-th read line RL _i , a signal S _RLi-F read from a third sensing pixel PXF by an (i+1)-th read line RL _i+1 , a signal S _GLk read from a k-th scan line _{GL k} , a signal S S L i+1 read from a (k+1)-th scan line GL _k+1 , and a signal S _GLk+1 and the signal S _GLk+2 of the (k+2)th scanning line GL _k+2 .

1 and 4 , in the first time interval t1, the signal S _GLk+1 of the k-th scanning line GL _k has a gate-opening signal, the i-th read line RL _i outputs the sensing signal S _RLi-A from the first sensing pixel PXA of the m-th sensing pixel row R _m , and the (i+1)-th read line RL _i+1 outputs the sensing signal S _RLi+1-C from the first sensing pixel PXC of the m-th sensing pixel row R _m ; in the second time interval t2 following the first time interval t1, the k+1-th scanning line GL _k+1 has a gate-opening signal, the i-th read line RL _i outputs the sensing signal S _RLi-B from the second sensing pixel PXB of the m-th sensing pixel row R _m . In the third time interval t3 following the second time interval t2, the signal S _{GLk +2 of the (k+2)th scanning line GL k} +2 has a gate-on signal, the i-th read line RL _i outputs the sensing signal S _RLi-D from the third sensing pixel PXD of the (m+1)th sensing pixel row R _m+1 , and the (i+1)th read line RLi+1 outputs the sensing signal S RLi+1-F from the third sensing pixel PXF of the (m+1)th sensing pixel row R _{m+1 …} . By analogy, the reading of all sensing pixels PX of the invisible light sensing device 10 can be completed.

The following will list some other embodiments to illustrate the present disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the aforementioned embodiments, and no further description will be given below.

FIG5 is a top view schematic diagram of another embodiment of the invisible light sensing device of the present invention. The invisible light sensing device 10A of FIG5 is similar to the invisible light sensing device 10 of FIG1 . The difference between the two is that the electrical connection method of the common line CL and the sensing pixel PX of the two is different, and the position of the common line CL of the two is also different.

Please refer to FIG. 1 and FIG. 5 , in detail, in the embodiment of FIG. 1 , a plurality of sensing pixel rows C are electrically connected to a plurality of common lines CL respectively; in the embodiment of FIG. 5 , two adjacent sensing pixel rows C are electrically connected to the same common line CL. For example, in the embodiment of FIG. 5 , a plurality of second electrodes 210 of a plurality of sensing pixels PX in the (n+1)th sensing pixel row C _n+1 and a plurality of second electrodes 210 of a plurality of sensing pixels PX in the (n+2)th sensing pixel row C _n+2 are electrically connected to the same common line CL.

In addition, in the embodiment of FIG. 1 , in the top view of the invisible light sensing device 10, each common line CL is disposed on a plurality of photosensitive elements PD of a corresponding sensing pixel row C; in the embodiment of FIG. 5 , in the top view of the visible light sensing device 10A, each common line CL is disposed between two adjacent sensing pixel rows C. For example, in the embodiment of FIG. 5 , one common line CL is located between the (n+1)th sensing pixel row C _n+1 and the (n+2)th sensing pixel row C _n+2 .

FIG6 is a partial top view schematic diagram of another embodiment of the invisible light sensing device of the present invention. The invisible light sensing device 10B of FIG6 is similar to the invisible light sensing device 10 of FIG2. The difference between the two is that the form of the switch element T of FIG6 is different from the form of the switch element T of FIG2, and the range of the common line CL shielding the switch element T of the two is also different.

In detail, in the embodiment of FIG. 2 , the control terminal 150 of the switch element T is located on the semiconductor pattern 130, that is, the switch element T is a top-gate thin film transistor (top-gate TFT), and the common line CL may not cover the entire semiconductor pattern 130; in the embodiment of FIG. 6 , the control terminal 150 of the switch element T is located below the semiconductor pattern 130, that is, the switch element T is a bottom-gate thin film transistor (bottom-gate TFT), and the common line CL may cover the entire semiconductor pattern 130. In addition, in the embodiment of FIG. 6 , the material of the semiconductor pattern 130 is, for example, polysilicon.

10: Invisible light sensing device

190: First electrode

200: Photoelectric conversion layer

210: Second electrode

C, _Cn , Cn ₊₁ , Cn ₊₂ : sensing pixel rows

CL: common line

d1: first direction

d2: Second direction

GL, GL _k , GL _k+1 , GL _k+2 , GL _k+3 : Scanning lines

PX, PXA, PXB, PXC, PXD, PXE, PXF: sensing pixels

PD: Photosensitive element

RL, RL _i , RL _i+1 : Reading line

R, R _m , R _m+1 : sensing pixel rows

Claims (8)

An invisible light sensing device comprises: A plurality of scanning lines extending in a first direction; A plurality of reading lines extending in a second direction, wherein the first direction intersects with the second direction; and A plurality of sensing pixels electrically connected to the scanning lines and the reading lines, wherein each of the sensing pixels comprises a switching element, a first electrode electrically connected to the switching element, a second electrode disposed opposite to the first electrode, a photoelectric conversion pattern disposed between the first electrode and the second electrode, and a wavelength conversion layer superimposed on the photoelectric conversion pattern; The sensing pixels are arranged into a plurality of sensing pixel rows and a plurality of sensing pixel columns along the first direction and the second direction, and a plurality of sensing pixels of the same sensing pixel column are arranged in the first direction, and a plurality of sensing pixels of the same sensing pixel column are arranged in the second direction; The sensing pixel rows include an nth sensing pixel row and an (n+1)th sensing pixel row arranged in sequence in the first direction, the sensing pixel columns include an mth sensing pixel column, and the scanning lines include a kth scanning line and a (k+1)th scanning line arranged in sequence in the second direction, wherein n, m and k are positive integers; The multiple control ends of the multiple switch elements of the sensing pixels of the mth sensing pixel row are electrically connected to the kth scanning line and the (k+1)th scanning line respectively, and the multiple first ends of the multiple switch elements of the sensing pixels of the nth sensing pixel row and the multiple first ends of the multiple switch elements of the sensing pixels of the (n+1)th sensing pixel row are electrically connected to the same read line of the read lines. The invisible light sensing device as described in claim 1, wherein the sensing pixel rows further include an (n+2)th sensing pixel row, the nth sensing pixel row, the (n+1)th sensing pixel row and the (n+2)th sensing pixel row are arranged in sequence in the first direction, and the invisible light sensing device further includes: A common line, wherein in a top view of the visible light sensing device, the common line is located between the (n+1)th sensing pixel row and the (n+2)th sensing pixel row. The invisible light sensing device as described in claim 2, wherein the second electrodes of the sensing pixels in the (n+1)th sensing pixel row and the second electrodes of the sensing pixels in the (n+2)th sensing pixel row are electrically connected to the common line. The invisible light sensing device as described in claim 1, wherein the sensing pixels of the m-th sensing pixel row include a plurality of first sensing pixels and a second sensing pixel, the second sensing pixel is arranged between the first sensing pixels, a plurality of control ends of the plurality of switch elements of the first sensing pixels are electrically connected to the k-th scanning line, and a control end of the switch element of the second sensing pixel is electrically connected to the (k+1)-th scanning line. An invisible light sensing device as described in claim 4, wherein in a first time period, the k-th scanning line has a gate-on signal, and the same read line outputs a sensing signal from the first sensing pixel in the m-th sensing pixel row; in a second time period following the first time period, the k+1-th scanning line has a gate-on signal, and the same read line outputs a sensing signal from the second sensing pixel in the m-th sensing pixel row. The invisible light sensing device as described in claim 1, wherein the sensing pixel rows further include an (m+1)th sensing pixel row, the mth sensing pixel row and the (m+1)th sensing pixel row are arranged sequentially in the second direction; the scanning lines further include a (k+2)th scanning line and a (k+3)th scanning line, the kth scanning line, the (k+1)th scanning line, the (k+2)th scanning line and the (k+3)th scanning line are arranged sequentially in the second direction; and the multiple control ends of the multiple switch elements of the sensing pixels of the (m+1)th sensing pixel row are electrically connected to the (k+2)th scanning line and the (k+3)th scanning line, respectively. An invisible light sensing device as described in claim 6, wherein in a top view of the visible light sensing device, the kth scan line and the (k+1)th scan line are respectively located on opposite sides of the mth sensing pixel row, the (k+2)th scan line and the (k+3)th scan line are respectively located on opposite sides of the (m+1)th sensing pixel row, and the (k+1)th scan line and the (k+2)th scan line are located between the mth sensing pixel row and the (m+1)th sensing pixel row. The invisible light sensing device as described in claim 6, wherein the sensing pixels of the (m+1)th sensing pixel row include a plurality of third sensing pixels and a fourth sensing pixel, the fourth sensing pixel is arranged between the third sensing pixels, a plurality of control ends of the plurality of switch elements of the third sensing pixels are electrically connected to the (k+2)th scanning line, and a control end of the switch element of the fourth sensing pixel is electrically connected to the (k+3)th scanning line.

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