TWI852451B - Emissivity measurement device and method, semiconductor processing equipment and infrared temperature measurement method - Google Patents

Abstract

An emissivity measuring device and method, a semiconductor processing device, and an infrared temperature measurement method. The emissivity measuring device is used to measure the emissivity of a measured object. In the emissivity measuring device, a reflector support is used to support a first reflector and a second reflector, both of which are opposite to the measured object; The first infrared radiation energy meter is used to measure the energy emitted by the tested piece and the energy emitted by the tested piece that is reflected by the first reflective piece, while the second infrared radiation energy meter is used to measure the energy emitted by the tested piece and the energy emitted by the tested piece that is reflected by the second reflective piece; Both the first and second infrared radiant energy meters are connected to a computing element that is used to calculate the emissivity of the tested object based on the measured values of the first and second infrared radiant energy meters.

Description

Emissivity measurement device and method, semiconductor processing equipment and infrared temperature measurement method

The present application relates to the technical field of emissivity measurement equipment, and in particular to an emissivity measurement device and method, semiconductor processing equipment and infrared temperature measurement method.

In semiconductor processing equipment, infrared thermometers are used to measure wafer temperature. Infrared temperature measurement technology is based on Planck's blackbody radiation law, in which the emissivity is the ratio of the infrared energy actually emitted by an object to its theoretical value, and is a key parameter for infrared temperature measurement. The emissivity of the wafer is related to the surface condition of the wafer (such as polishing, roughness, oxidation, sandblasting, etc.), surface geometry (such as plane, concave, convex, etc.), surface physical and chemical structure (such as deposits, oxide film, oil film, etc.), measurement temperature and measurement angle. Under actual working conditions, the temperature and surface condition of the wafer are constantly changing, so the emissivity of the wafer is constantly changing. Using an infrared thermometer with a fixed emissivity to measure the wafer temperature has errors and inaccurate results. Of course, this problem also exists when using infrared temperature measurement technology to measure the temperature of other test pieces.

The present application discloses an emissivity measurement device and method, semiconductor processing equipment and infrared temperature measurement method to solve the problem of error and inaccurate results when using an infrared pyrometer with a fixed emissivity to measure the temperature of a test piece.

In order to solve the above problems, this application adopts the following technical solutions:

In a first aspect, the present application provides an emissivity measuring device for measuring the emissivity of a device under test, comprising a first reflector, a second reflector, a reflector support, a first infrared radiation energy meter, a second infrared radiation energy meter, and a computing element; the reflector support is used to support the first reflector and the second reflector, the first reflector and the second reflector are both opposite to the device under test; the first infrared radiation energy meter is used to measure the emissivity of the device under test The infrared radiation energy meter is used to measure the energy emitted by the device under test and the energy emitted by the device under test and reflected by the second reflector. The first infrared radiation energy meter and the second infrared radiation energy meter are both connected to the calculation element, and the calculation element is used to calculate the emissivity of the device under test according to the measurement values of the first infrared radiation energy meter and the second infrared radiation energy meter.

In a second aspect, an embodiment of the present application provides a semiconductor processing equipment, including a process chamber and the above-mentioned emissivity measuring device, wherein the process chamber includes a base assembly, the base assembly is used to support a wafer, and the emissivity measuring device is used to measure the emissivity of the wafer; the first reflector, the second reflector, the reflector support, the probe of the first infrared radiation energy meter, and the probe of the second infrared radiation energy meter are all arranged in the process chamber; and the first reflector, the second reflector, the probe of the first infrared radiation energy meter, and the probe of the second infrared radiation energy meter are all arranged opposite to the back side of the wafer.

On the third aspect, an embodiment of the present application provides an emissivity measurement method, which is applied to the above-mentioned emissivity measurement device, and the method includes: obtaining the measurement value of the first infrared radiation energy meter; obtaining the measurement value of the second infrared radiation energy meter; and calculating the emissivity of the measured object based on the measurement value of the first infrared radiation energy meter and the measurement value of the second infrared radiation energy meter.

In a fourth aspect, the embodiment of the present application provides an infrared temperature measurement method, which applies the above-mentioned emissivity measurement method. The infrared temperature measurement method includes: obtaining the emissivity ɛ of the measured object; obtaining the infrared radiation energy W of the measured object; and obtaining the real-time temperature based on the emissivity ɛ and the infrared radiation energy W.

The technical solution adopted in this application can achieve the following beneficial effects:

The emissivity measuring device of the present application includes a first reflector, a second reflector, a reflector support, a first infrared radiation energy meter, a second infrared radiation energy meter and a computing element. The first infrared radiation energy meter can measure in real time the energy emitted by the device under test and the energy emitted by the device under test and reflected by the first reflector. The second infrared radiation energy meter can measure in real time the energy emitted by the device under test and the energy emitted by the device under test and reflected by the second reflector. The emissivity of the device under test can be calculated in real time through the computing element, thereby measuring the temperature of the device under test in real time. The emissivity measuring device can measure the emissivity of the device under test in real time. Since the environments of the first infrared radiation energy meter and the second infrared radiation energy meter are similar, the emissivity of the device under test under current conditions can be accurately obtained regardless of how the device under test and the environment in which it is located change. Therefore, the device can improve the accuracy of emissivity measurement.

The following disclosure provides many different embodiments or examples for implementing the different components of the present disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, a first component formed above or on a second component in the following description may include an embodiment in which the first component and the second component are formed to be in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the present disclosure may repeatedly refer to numbers and/or letters in each example. This repetition is for the purpose of simplification and clarity and does not itself indicate the relationship between the various embodiments and/or configurations discussed.

Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein to describe the relationship of one element or component to another element or components as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted similarly.

Although the numerical ranges and parameters setting forth the broad scope of the present disclosure are approximate, the numerical values set forth in the specific examples are reported as accurately as possible. However, any numerical value inherently contains certain errors necessarily due to the standard deviation found in the respective testing measurements. Furthermore, as used herein, the term "approximately" generally means within 10%, 5%, 1% or 0.5% of a given value or range. Alternatively, the term "approximately" means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in the operating/working examples, or unless otherwise explicitly specified, all numerical ranges, quantities, values and percentages for the amount of materials disclosed herein, the duration of time, temperature, operating conditions, the ratio of quantities and the like should be understood as being modified by the term "approximately" in all instances. Accordingly, unless otherwise indicated, the numerical parameters set forth in the present disclosure and the accompanying invention claims are approximate values that may vary as needed. At least, each numerical parameter should be interpreted in view of the number of reported significant digits and by applying ordinary rounding techniques. Ranges may be expressed herein as from one end point to another or between two end points. All ranges disclosed herein include endpoints unless otherwise specified.

The following is a detailed description of the technical solutions disclosed in each embodiment of this application in conjunction with the accompanying drawings.

As shown in FIGS. 1 to 4 , the embodiment of the present application provides an emissivity measuring device, which is used to measure the emissivity of a test piece 800, and includes a first reflector 300, a second reflector 400, a reflector support 500, a first infrared radiation energy meter 600, a second infrared radiation energy meter 700, and a computing element. Optionally, the emissivity measuring device can be applied to semiconductor processing equipment, and the emissivity measuring device can be installed in a process chamber 100 of the semiconductor processing equipment to measure the emissivity of a wafer 810 in the process chamber 100.

It should be noted that the wafer 810 here is a specific structure under test of the device under test 800. When the emissivity measurement device is applied to semiconductor processing equipment, the device under test 800 may be the wafer 810. Of course, when the emissivity measurement device is applied to other equipment, the device under test 800 may be other structures under test.

The reflector support 500 is used to support the first reflector 300 and the second reflector 400. The first reflector 300 and the second reflector 400 are structural members with known reflectivity. The first reflector 300 and the second reflector 400 are both opposite to the measured object 800. The first reflector 300 and the second reflector 400 are both arranged above the measured object 800, or the first reflector 300 and the second reflector 400 are both arranged below the measured object 800.

For easy installation, the first reflector 300 and the second reflector 400 can be disposed below the device under test 800. When the first reflector 300 and the second reflector 400 are disposed below the device under test 800 and the emissivity measurement device is applied to semiconductor processing equipment, the reflector support 500 can be directly connected to the bottom of the process chamber 100 where the emissivity measurement device is located.

The first infrared radiation energy meter 600 is used to measure the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the first reflector 300, and the second infrared radiation energy meter 700 is used to measure the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the second reflector 400. That is, the first infrared radiation energy meter 600 can receive the energy emitted by the device under test 800 and not reflected and the energy emitted by the device under test 800 and reflected by the first reflector 300; the second infrared radiation energy meter 700 can receive the energy emitted by the device under test 800 and not reflected and the energy emitted by the device under test 800 and reflected by the second reflector 400. Furthermore, the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700 are both connected to a calculation element, and the calculation element is used to calculate the emissivity of the device under test 800 according to the measurement values of the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700.

The calculation element may be a separate structural component or a part of a control device. For example, when the emissivity measurement device is applied to semiconductor processing equipment, the calculation element may be a part of the control device of the semiconductor processing equipment, or the calculation element may be a part of a temperature controller of the semiconductor processing equipment.

By adopting the emissivity measuring device of the embodiment of the present application, the first infrared radiation energy meter 600 can measure in real time the energy emitted by the test piece 800 and the energy emitted by the test piece 800 and reflected by the first reflector 300, and the second infrared radiation energy meter 700 can measure in real time the energy emitted by the test piece 800 and the energy emitted by the test piece 800 and reflected by the second reflector 400. The emissivity of the test piece 800 can be calculated in real time through the computing element, thereby measuring the temperature of the test piece 800 in real time. The emissivity measuring device can measure the emissivity of the device under test 800 in real time. Since the first infrared radiation energy meter 600 and the second infrared radiation energy meter 800 are located in similar environments, the emissivity of the device under test 800 under current conditions can be accurately obtained regardless of how the device under test 800 itself and the environment in which it is located change. Therefore, the device can improve the accuracy of emissivity measurement.

Optionally, referring to FIG. 3 and FIG. 4 , r is the reflectivity of the measured object 800, _r1 is the reflectivity of the first reflector 300, _r2 is the reflectivity of the second reflector 400, ɛ is the emissivity, W is the infrared radiation energy, _W1 is the energy measured by the first infrared radiation energy meter 600, and _W1 satisfies the following relationship: W ₂ is the energy measured by the second infrared radiation energy meter 700, and W ₂ satisfies the following relationship: .

Therefore, the emissivity of the device under test 800 can be obtained. , the emissivity of the device under test 800 can be calculated according to this formula.

In the embodiment of the present application, the probe of the first infrared radiation energy meter 600 passes through the first reflector 300 and is opposite to the device under test 800, and the probe of the second infrared radiation energy meter 700 passes through the second reflector 400 and is opposite to the device under test 800, so that the probe of the first infrared radiation energy meter 600 can more comprehensively receive the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the first reflector 300, and the probe of the second infrared radiation energy meter 700 can more comprehensively receive the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the second reflector 400. The “triangular area” between the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 and the device under test 800 shown in FIG. 1 is the viewing angle of the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700 that can receive energy.

Optionally, the distance from the probe of the first infrared radiation energy meter 600 to the center of the test piece 800 is equal to the distance from the probe of the second infrared radiation energy meter 700 to the center of the test piece 800. This arrangement makes the distance from the position of the test piece 800 corresponding to the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 to the center of the test piece 800 equal, and because the environment of the test piece 800 at the position equal to the center thereof is similar, the surface state of the test piece 800 at the position equal to the center thereof is similar, so that the measurement and calculation are more accurate.

In an optional embodiment, the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 are symmetrically arranged along the radial direction of the test piece 800. On the basis of ensuring that the distance from the probe of the first infrared radiation energy meter 600 to the center of the test piece 800 and the distance from the probe of the second infrared radiation energy meter 700 to the center of the test piece 800 are equal, the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 are symmetrically arranged along the radial direction of the test piece 800. 00 probes are symmetrically arranged along the radial direction of the test piece 800, which is more convenient for positioning and installing the probes of the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700, and the environments of the test piece 800 at the positions symmetrically arranged along the radial direction of the test piece 800 are closer, so that the surface conditions of the test piece 800 at the positions symmetrically arranged along the radial direction of the test piece 800 are more similar, so that the measurement and calculation are more accurate.

The first reflector 300 and the second reflector 400 can be installed independently of each other. Optionally, in the embodiment of the present application, the first reflector 300 is supported by the reflector support 500, and the second reflector 400 is embedded in the first reflector 300. The reflective surface of the first reflector 300 and the reflective surface of the second reflector 400 are on the same horizontal plane. The probe of the second infrared radiation energy meter 700 passes through the first reflector 300 and the second reflector 400 in sequence and faces the measured object 800. In this arrangement, the second reflector 400 can be first embedded in the first reflector 300, and then the first reflector 300 can be installed on the reflector support 500, and then the reflector support 500 can be installed on the mounting base, so as to achieve the installation of the first reflector 300 and the second reflector 400 in the process chamber 100. Therefore, this arrangement is easier to assemble and it is easier to ensure the relative position of the first reflector 300 and the second reflector 400.

When the first reflector 300 is supported by the reflector support 500 and the second reflector 400 is embedded in the first reflector 300, the probe of the first infrared radiation energy meter 600 passes through the first reflector 300 and faces the device under test 800; the probe of the second infrared radiation energy meter 700 passes through the first reflector 300 and the second reflector 400 in sequence and faces the device under test 800.

When the first reflector 300 and the second reflector 400 are located below the device under test 800, the probe of the first infrared radiation energy meter 600 can pass through the first reflector 300 from bottom to top and face the device under test 800; the probe of the second infrared radiation energy meter 700 passes through the first reflector 300 and the second reflector 400 from bottom to top in sequence and faces the device under test 800, so that the probe of the first infrared radiation energy meter 600 can more comprehensively receive the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the first reflector 300, and at the same time, the probe of the second infrared radiation energy meter 700 can more comprehensively receive the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the second reflector 400.

In the embodiment of the present application, the emissivity of the second reflector 400 is 1. Optionally, the second reflector 400 is a black body. For an opaque object, emissivity + reflectivity = 1. If the emissivity of the second reflector 400 is 1, the reflectivity of the second reflector 400 is 0. The energy reaching the second reflector 400 is completely absorbed. The energy received by the probe of the second infrared radiation energy meter 700 is the energy emitted by the test piece 800, and there is no energy reflected by the second reflector 400. At this time, the second infrared radiation energy meter 700 can select an infrared radiation energy meter with a smaller viewing angle (refer to FIG. 2), which further ensures that the energy received by the second infrared radiation energy meter 700 is only the energy emitted by the test piece 800, and avoids receiving energy reflected from the peripheral environment. The “triangular area” between the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 and the device under test 800 shown in FIG. 2 is the viewing angle of the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700 that can receive energy, and the viewing angle of the second infrared radiation energy meter 700 is smaller than the viewing angle of the first infrared radiation energy meter 600.

Optionally, the second reflector 400 is a non-transparent silicon-based reflector plate. Of course, the second reflector 400 can also be a reflector made of metal or other materials.

The present application embodiment also provides a semiconductor processing equipment, which includes a process chamber 100 and an emissivity measuring device, the emissivity measuring device is the emissivity measuring device mentioned above, the process chamber 100 is used to process a wafer 810, the process chamber 100 includes a base assembly 200, the base assembly 200 is used to carry the wafer 810, and the emissivity measuring device is used to measure the emissivity of the wafer 810. The first reflector 300, the second reflector 400, the reflector support 500, the probe of the first infrared radiation energy meter 600, and the probe of the second infrared radiation energy meter 700 are all arranged in the process chamber 100. Optionally, the first reflector 300, the second reflector 400, the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 are all arranged opposite to the back side of the wafer 810 to measure the emissivity of the wafer 810 without affecting the processing operation on the front side of the wafer 810.

The process chamber 100 is the main component of the semiconductor processing equipment, which can provide a mounting base for other components of the semiconductor processing equipment, and the wafer 810 is processed in the process chamber 100 .

Optionally, the base assembly 200 includes a base 210 and a base support assembly 220, wherein the base 210 is used to support the wafer 810, the base support assembly 220 is used to support the base 210, the base support assembly 220 includes a stator 221 and a rotor 222, the rotor 222 is disposed in the process chamber 100 and connected to the base 210, the stator 221 is disposed outside the process chamber 100, the stator 221 and the rotor 222 are magnetically coupled to drive the base 210 to rotate or rise and fall, thereby driving the wafer 810 to rotate or rise and fall. In this embodiment, the stator 221 and the rotor 222 can transmit the force without contact, so there is no need to open a through hole on the process chamber 100 for the transmission components to pass through, so this embodiment is more conducive to improving the sealing performance of the process chamber 100.

For ease of installation, the reflector support 500 can be disposed in the process chamber 100. For example, the reflector support 500 can be fixedly mounted on the process chamber 100 to support the first reflector 300 and the second reflector 400 in the process chamber 100. There is a certain distance between the first reflector 300 and the second reflector 400 and the wafer 810.

For ease of installation, the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700 can be arranged in the process chamber 100. For example, the first infrared radiation energy meter 600 and the second infrared radiation energy meter 700 can be fixedly installed on the process chamber 100, and the probe of the first infrared radiation energy meter 600 and the probe of the second infrared radiation energy meter 700 both extend into the process chamber 100 to measure the energy emitted by the wafer 810 and the energy emitted by the wafer 810 and reflected by the first reflector 300, and the energy emitted by the wafer 810 and the energy emitted by the wafer 810 and reflected by the second reflector 400.

By using the semiconductor processing equipment of the embodiment of the present application, the first infrared radiation energy meter 600 can measure in real time the energy emitted by the wafer 810 and the energy emitted by the wafer 810 and reflected by the first reflector 300, and the second infrared radiation energy meter 700 can measure in real time the energy emitted by the wafer 810 and the energy emitted by the wafer 810 and reflected by the second reflector 400, and the emissivity of the wafer 810 can be calculated in real time through the calculation element, thereby measuring in real time the temperature of the wafer 810. The emissivity measuring device can measure the emissivity of the wafer 810 in real time, and the emissivity of the wafer 810 under the current conditions can be accurately obtained regardless of how the wafer 810 itself and the environment in which it is located change, so that the accuracy of the emissivity measurement can be improved, and the accuracy of the control of the processing process of the wafer 810 can be further improved.

The present application embodiment also provides an emissivity measurement method, which uses the above-mentioned emissivity measurement device. The emissivity measurement method in the present application embodiment includes the following steps:

S110, obtaining a measurement value of the first infrared radiation energy meter 600;

S120, obtaining the measurement value of the second infrared radiation energy meter 700;

S130, calculating the emissivity of the device under test 800 according to the measurement value of the first infrared radiation energy meter 600 and the measurement value of the second infrared radiation energy meter 700.

In the emissivity measurement method in the present application embodiment, the formula Calculate the emissivity of the device under test 800; wherein ɛ is the emissivity of the device under test 800, W ₁ is the measurement value of the first infrared radiation energy meter 600, W ₂ is the measurement value of the second infrared radiation energy meter 700, r ₁ is the reflectivity of the first reflective element 300, and r ₂ is the reflectivity of the second reflective element 400.

The reflectivity _r1 of the first reflector 300 and the reflectivity _r2 of the second reflector 400 are known, _W1 and _W2 can be measured, and therefore, the formula Calculate the emissivity of the device under test 800. In addition, the energy W ₁ measured by the first infrared radiation energy meter 600 and the energy W ₂ measured by the second infrared radiation energy meter 700 can be measured in real time, so the real-time emissivity ɛ of the device under test 800 can be calculated.

In the present application embodiment, the emissivity of the second reflector 400 can be 1. For a non-transparent object, emissivity + reflectivity = 1. If the emissivity of the second reflector 400 is 1, the reflectivity of the second reflector 400 is _r2 = 0. Therefore, the emissivity of the object under test 800 can be obtained. .

Therefore, when calculating the emissivity of the DUT 800, the formula Calculate the emissivity of the device under test 800.

In the embodiment of the present application, when calculating the emissivity of the device under test 800, the dependence on the reflectivity of the second reflector 400 is reduced, making the calculation formula simpler.

Using the emissivity measurement method of the present application, the first infrared radiation energy meter 600 can measure the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the first reflector 300, and the second infrared radiation energy meter 700 can measure the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the second reflector 400. By obtaining the measurement values of the first infrared radiation energy meter 600 and the measurement values of the second infrared radiation energy meter 700, the emissivity of the device under test 800 can be calculated.

Furthermore, the first infrared radiation energy meter 600 can measure in real time the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the first reflector 300, and the second infrared radiation energy meter 700 can measure in real time the energy emitted by the device under test 800 and the energy emitted by the device under test 800 and reflected by the second reflector 400. By obtaining the measurement value of the first infrared radiation energy meter 600 and the measurement value of the second infrared radiation energy meter 700 in real time, the emissivity of the device under test 800 can be calculated in real time. Regardless of how the device under test 800 itself and the environment in which it is located change, the emissivity of the device under test 800 under current conditions can be accurately obtained, thereby improving the accuracy of emissivity measurement.

The present application embodiment also provides an infrared temperature measurement method, which applies the above-mentioned emissivity measurement method. The infrared temperature measurement method includes the following steps:

S210, obtain the emissivity ɛ of the device under test 800.

For example, the emissivity of the device under test 800 may be calculated based on the measurement values of the first infrared radiation energy meter 600 and the measurement values of the second infrared radiation energy meter 700.

S220, obtaining infrared radiation energy W of the device under test 800.

For example, infrared radiation energy can be measured by an infrared thermometer as W.

S230. Obtain the real-time temperature based on the emissivity ɛ and the infrared radiation energy W.

In this method, there is a functional relationship between the real-time temperature T of the device under test 800, the emissivity ɛ of the device under test 800, and the infrared radiation energy W of the device under test 800, that is, After obtaining the emissivity ɛ of the device under test 800 and the infrared radiation energy W of the device under test 800, the real-time temperature T of the device under test 800 can be calculated.

By adopting the infrared temperature measurement method of the present application, the first infrared radiation energy meter 600 can measure in real time the energy emitted by the test piece 800 and the energy emitted by the test piece 800 and reflected by the first reflector 300, and the second infrared radiation energy meter 700 can measure in real time the energy emitted by the test piece 800 and the energy emitted by the test piece 800 and reflected by the second reflector 400. The emissivity of the test piece 800 can be calculated in real time through the computing element, thereby measuring the temperature of the test piece 800 in real time, and then performing subsequent control operations according to the temperature of the test piece 800.

In the embodiment of the present application, in the semiconductor processing equipment, the temperature of the wafer 810 is measured by an infrared thermometer. The energy measured by the first infrared radiation energy meter 600 is W ₁ , and the energy measured by the second infrared radiation energy meter 700 is W ₂ . The formula , the emissivity ɛ of the wafer 810 is calculated, and then the calculated emissivity ɛ is set to the infrared thermometer, the infrared thermometer can output the measured real-time temperature T, the semiconductor processing equipment determines the power of the lamp of the semiconductor processing equipment based on the set temperature and the measured real-time temperature T, and adjusts the power of the lamp of the semiconductor processing equipment according to the determined power of the lamp of the semiconductor processing equipment. After that, the temperature of the wafer 810 changes, and the emissivity ɛ of the wafer 810 changes accordingly. According to the energy _W1 measured by the first infrared radiation energy meter 600 and the energy _W2 measured by the second infrared radiation energy meter 700, the formula By calculating the real-time emissivity ɛ of the wafer 810 and repeating the process in sequence, the emissivity ɛ of the wafer 810 can be obtained in real time, so that the temperature of the wafer 810 can be measured in real time. The measurement result is accurate, and the accuracy of controlling the processing of the wafer 810 can be improved.

The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for implementing the same purpose and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the present disclosure.

100: Process chamber 200: Base assembly 210: Base 220: Base support assembly 221: Stator 222: Rotor 300: First reflector 400: Second reflector 500: Reflector support 600: First infrared radiation energy meter 700: Second infrared radiation energy meter 800: Measured object 810: Wafer

The present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the various components are not drawn to scale in accordance with standard practices in the industry. In fact, the sizes of the various components may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 is a schematic diagram of the structure of a semiconductor processing device in an embodiment of the present application; FIG. 2 is a schematic diagram of the structure of a semiconductor processing device in another embodiment of the present application; FIG. 3 is a schematic diagram of the first infrared radiation energy meter receiving energy emitted by the test piece and energy reflected by the first reflector in an embodiment of the present application; FIG. 4 is a schematic diagram of the second infrared radiation energy meter receiving energy emitted by the test piece and energy reflected by the second reflector in an embodiment of the present application.

100: Processing chamber

200: Base assembly

210: Base

220: Base support assembly

221: Stator

222: Rotor

300: First reflector

400: Second reflector

500:Reflector support

600: The first infrared radiation energy meter

700: Second infrared radiation energy meter

810: Wafer

Claims (12)

An emissivity measuring device is used to measure an emissivity of a measured object, wherein the device comprises a first reflector, a second reflector, a reflector support, a first infrared radiation energy meter, a second infrared radiation energy meter and a calculation element; the reflector support is used to support the first reflector and the second reflector, the first reflector and the second reflector are both opposite to the measured object; the first infrared radiation energy meter is used to measure the energy emitted by the measured object and the energy emitted by the measured object and reflected by the first reflector, the second infrared radiation energy meter is used to measure the energy emitted by the measured object and the energy reflected by the first reflector, and the second infrared radiation energy meter is used to measure the energy emitted by the measured object and the energy reflected by the first reflector. The radiation energy meter is used to measure the energy emitted by the device under test and the energy emitted by the device under test and reflected by the second reflector; the first infrared radiation energy meter and the second infrared radiation energy meter are both connected to the calculation element, and the calculation element is used to calculate the emissivity of the device under test according to the measured values of the first infrared radiation energy meter and the second infrared radiation energy meter; wherein the probe of the first infrared radiation energy meter passes through the first reflector and faces the device under test, and the probe of the second infrared radiation energy meter passes through the second reflector and faces the device under test. An emissivity measuring device as described in claim 1, wherein the distance from the probe of the first infrared radiation energy meter to the center of the measured object is equal to the distance from the probe of the second infrared radiation energy meter to the center of the measured object. The emissivity measuring device as described in claim 2, wherein the probe of the first infrared radiation energy meter and the probe of the second infrared radiation energy meter are arranged symmetrically along the radial direction of the measured object. The emissivity measuring device as described in claim 1, wherein the first reflector is supported by the reflector support, the second reflector is embedded in the first reflector, and the reflective surface of the first reflector and the reflective surface of the second reflector are on the same horizontal plane; the probe of the second infrared radiation energy meter passes through the first reflector and the second reflector in sequence and faces the measured object. An emissivity measuring device as described in claim 4, wherein the emissivity of the second reflector is 1. An emissivity measuring device as described in claim 4, wherein the second reflector is a non-transparent silicon-based reflector. A semiconductor processing equipment, comprising a process chamber and an emissivity measuring device as described in any one of claims 1-6, wherein the process chamber comprises a base assembly, the base assembly is used to carry a wafer, and the emissivity measuring device is used to measure the emissivity of the wafer; the first reflector, the second reflector, the reflector support, the probe of the first infrared radiation energy meter, and the probe of the second infrared radiation energy meter are all arranged in the process chamber; and the first reflector, the second reflector, the probe of the first infrared radiation energy meter, and the probe of the second infrared radiation energy meter are all arranged opposite to the back side of the wafer. The semiconductor processing equipment as described in claim 7, wherein the base assembly includes a base and a base support assembly, wherein the base is used to carry the wafer, the base support assembly is used to support the base, the base support assembly includes a stator and a rotor, the rotor is arranged in the process chamber and connected to the base, the stator is arranged outside the process chamber, and the stator and the rotor are magnetically coupled to drive the base to rotate or lift. A method for measuring emissivity, wherein the method is applied to the emissivity measuring device described in any one of claim items 1-6, and the method comprises: obtaining the measurement value of the first infrared radiation energy meter; obtaining the measurement value of the second infrared radiation energy meter; and calculating the emissivity of the measured object according to the measurement value of the first infrared radiation energy meter and the measurement value of the second infrared radiation energy meter. The emissivity measurement method of claim 9, wherein the emissivity of the device under test is calculated as follows:

Calculate the emissivity of the device under test; wherein ε is the emissivity of the device under test, _W1 is the measurement value of the first infrared radiation energy meter, _W2 is the measurement value of the second infrared radiation energy meter, _r1 is the reflectivity of the first reflector, and _r2 is the reflectivity of the second reflector. In the emissivity measurement method of claim 10, wherein the second reflector is a reflector with an emissivity of 1, the emissivity of the device under test is calculated as follows:

Calculate the emissivity of the DUT. An infrared temperature measurement method, wherein the emissivity measurement method described in any one of claim items 9-11 is applied, and the infrared temperature measurement method comprises: obtaining the emissivity ε of the measured object; obtaining the infrared radiation energy W of the measured object; and obtaining the real-time temperature according to the emissivity ε and the infrared radiation energy W.