TWI852249B - Method and system for performing diffractometry - Google Patents

Abstract

Disclosed herein is a method for performing diffractometry. The method includes: sending a first radiation beam toward an object; capturing, with first portions respectively of active areas of an image sensor, images of a diffraction pattern resulting from the first radiation beam being diffracted by the object; sending a second radiation beam toward calibration patterns; capturing, with second portions respectively of the active areas of the image sensor, an image of the calibration patterns based on an interaction between the second radiation beam and the calibration patterns, wherein each portion of the second portions captures an image of at least a calibration pattern of the calibration patterns; and determining a crystal structure of the object based on the images of the diffraction pattern and the image of the calibration patterns. The first portions and the second portions do not overlap.

Description

Method and system for performing diffraction measurement

The present invention relates to a method and a system for performing diffraction measurement.

A radiation detector is a device that measures a property of radiation. Examples of the property may include the spatial distribution of intensity, phase, and polarization of the radiation. The radiation measured by the radiation detector may be radiation that has passed through an object. The radiation measured by the radiation detector may be electromagnetic radiation, such as infrared light, visible light, ultraviolet light, X-rays, or gamma rays. The radiation may be of other types, such as alpha rays and beta rays. An imaging system may include one or more image sensors, each of which may have one or more radiation detectors.

A method is disclosed herein, comprising: transmitting a first radiation beam to an object; using respective M first portions of M active regions of an image sensor of a system to capture N images of a diffraction pattern generated by diffraction of the first radiation beam by the object, wherein M and N are positive integers; transmitting a second radiation beam to P calibration patterns, wherein P is a positive integer; using respective M second portions of the M active regions of the image sensor to capture N images of a diffraction pattern generated by diffraction of the first radiation beam by the object based on the relative positions of the second radiation beam and the P calibration patterns. interaction, capturing images of the P calibration patterns, wherein each of the M second portions captures an image of at least one calibration pattern of the P calibration patterns; and determining a crystal structure of the object based on (A) the N images of the diffraction patterns and (B) the images of the P calibration patterns, wherein no sensing element among all the sensing elements of the M active areas is simultaneously in (A) a portion of the M first portions and (B) a portion of the M second portions.

In one aspect, the first radiation beam and the second radiation beam include X-ray photons.

In one aspect, the first radiation beam comprises monochromatic X-ray photons.

In one aspect, the object comprises (A) a single crystal material or (B) a powder of a crystalline material.

In one aspect, the system includes a collimator configured to prevent the first radiation beam and radiation particles generated by diffraction of the first radiation beam by the object from reaching the M second portions of the M active regions.

In one aspect, the first radiation beam is a pencil beam.

In one aspect, at least one radiation particle of the first radiation beam and at least one radiation particle of the second radiation beam are emitted simultaneously.

On the one hand, determining the crystal structure of the object includes: based on the images of the P calibration patterns, correcting the N images of the diffraction pattern to obtain N corrected images of the diffraction pattern respectively; stitching the N corrected images of the diffraction pattern to obtain a stitched image of the diffraction pattern; and determining the crystal structure of the object based on the stitched image of the diffraction pattern.

On the one hand, determining the crystal structure of the object includes: based on the images of the P calibration patterns, correcting the N images of the diffraction pattern to obtain N corrected images of the diffraction pattern respectively; and determining the crystal structure of the object based on the N corrected images of the diffraction pattern.

In one aspect, N=2, and the N images of the diffraction pattern are captured when the image sensors are respectively located at N positions so that the gaps between the M active areas are scanned by the M active areas.

In one aspect, the M active areas are arranged into a first column of active areas and a second column of active areas, and a gap between any two adjacent active areas in the first column is not aligned with a gap between any two adjacent active areas in the second column.

In one aspect, the M first portions are located between (A) portions of the M second portions of the first column and (B) portions of the M second portions of the second column.

In one aspect, the M active areas form a column of active areas, and for each of the M active areas, the second portion of each active area includes two areas sandwiching the first portion of each active area.

In one aspect, in the capturing of the images of the P calibration patterns, each of the two regions of the second portion of each active area captures an image of at least one calibration pattern of the P calibration patterns.

The present invention discloses a system, which includes: an image sensor, which includes M active areas, each of which includes M first parts and M second parts, where M is a positive integer; a radiation source; and P calibration patterns, where P is a positive integer, wherein the radiation source is configured to send a first radiation beam to an object, wherein the M first parts are configured to capture N images of a diffraction pattern generated by the first radiation beam being diffracted by the object, where N is a positive integer, wherein the radiation source is configured to send a second radiation beam to the P calibration patterns, wherein the M second parts are configured to capture N images of a diffraction pattern generated by the first radiation beam being diffracted by the object, where N is a positive integer. The system is configured to capture images of the P calibration patterns based on an interaction between the second radiation beam and the P calibration patterns, wherein each of the M second portions captures an image of at least one of the P calibration patterns, wherein the system is configured to determine a crystal structure of the object based on (A) the N images of the diffraction pattern and (B) the images of the P calibration patterns, and wherein no sensing element among all the sensing elements of the M active areas is simultaneously in (A) a portion of the M first portions and (B) a portion of the M second portions.

In one aspect, the system further includes a collimator configured to prevent the first radiation beam and radiation particles generated by diffraction of the first radiation beam by the object from reaching the M second portions of the M active regions.

In one aspect, at least one radiation particle of the first radiation beam and at least one radiation particle of the second radiation beam are emitted simultaneously.

On the one hand, determining the crystal structure of the object includes: based on the images of the P calibration patterns, correcting the N images of the diffraction pattern to obtain N corrected images of the diffraction pattern; stitching the N corrected images of the diffraction pattern to obtain a stitched image of the diffraction pattern; and determining the crystal structure of the object based on the stitched image of the diffraction pattern.

On the one hand, determining the crystal structure of the object includes: based on the images of the P calibration patterns, correcting the N images of the diffraction pattern to obtain N corrected images of the diffraction pattern respectively; and determining the crystal structure of the object based on the N corrected images of the diffraction pattern.

In one aspect, N=2, and the N images of the diffraction pattern are captured when the image sensors are respectively located at N positions so that the gaps between the M active areas are scanned by the M active areas.

In one aspect, the M active areas are arranged into a first column of active areas and a second column of active areas, and a gap between any two adjacent active areas in the first column is not aligned with a gap between any two adjacent active areas in the second column.

In one aspect, the M first portions are located between (A) portions of the M second portions of the first column and (B) portions of the M second portions of the second column.

In one aspect, the M active areas form a column of active areas, and for each of the M active areas, the second portion of each active area includes two areas sandwiching the first portion of each active area.

Radiation Detector

FIG1 schematically shows a radiation detector 100 as an example. The radiation detector 100 may include an array of picture elements 150 (also referred to as sensing elements 150). The array may be a rectangular array (as shown in FIG1 ), a honeycomb array, a hexagonal array, or any other suitable array. The array of picture elements 150 in the example of FIG1 has 4 columns and 7 rows; however, in general, the array of picture elements 150 may have any number of rows and any number of columns.

Each pixel 150 can be configured to detect radiation from a radiation source (not shown) incident thereon, and can be configured to measure characteristics of the radiation (e.g., energy, wavelength, and frequency of the particles). The radiation can include radiation particles such as photons (X-rays, gamma rays, etc.) and subatomic particles (alpha particles, beta particles, etc.). Each pixel 150 can be configured to count the number of radiation particles whose energy falls into multiple energy intervals incident thereon over a period of time. All pixels 150 can be configured to count the number of radiation particles incident thereon in multiple energy intervals over the same period of time. When the incident radiation particles have similar energies, the image element 150 may be configured to simply count the number of radiation particles incident thereon over a period of time, rather than measuring the energy of individual radiation particles.

Each pixel 150 may have its own analog-to-digital converter (ADC) configured to digitize an analog signal representing the energy of an incident radiation particle into a digital signal, or to digitize an analog signal representing the total energy of multiple incident radiation particles into a digital signal. The pixels 150 may be configured to operate in parallel. For example, while one pixel 150 is measuring an incident radiation particle, another pixel 150 may be waiting for the arrival of a radiation particle. The pixels 150 may not necessarily be individually addressable.

The radiation detector 100 described herein may have applications such as X-ray telescopes, X-ray mammography, industrial X-ray defect detection, X-ray microscopes or microradiography, X-ray casting inspection, X-ray nondestructive inspection, X-ray weld inspection, X-ray digital subtraction angiography, etc. It may be appropriate to use the radiation detector 100 in place of photographic plates, photographic films, PSP plates, X-ray image intensifiers, scintillators, or other semiconductor X-ray detectors.

FIG2 schematically illustrates a simplified cross-sectional view of the radiation detector 100 of FIG1 along line 2-2 according to an embodiment. Specifically, the radiation detector 100 may include a radiation absorbing layer 110 and an electronic device layer 120 (which may include one or more ASICs or application-specific integrated circuits) for processing or analyzing electrical signals generated in the radiation absorbing layer 110 by incident radiation. The radiation detector 100 may or may not include a scintillator (not shown). The radiation absorbing layer 110 may include a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof. The semiconductor material may have a high quality attenuation coefficient for the radiation of interest.

As an example, Fig. 3 schematically shows a detailed cross-sectional view of the radiation detector 100 of Fig. 1 along line 2-2. Specifically, the radiation absorbing layer 110 may include one or more diodes (e.g., p-i-n or p-n) formed by one or more discrete regions 114 of the first doped region 111, the second doped region 113. The second doped region 113 may be separated from the first doped region 111 by an optional intrinsic region 112. The discrete regions 114 may be separated from each other by the first doped region 111 or the intrinsic region 112. The first doped region 111 and the second doped region 113 may have opposite types of doping (e.g., region 111 is p-type and region 113 is n-type, or region 111 is n-type and region 113 is p-type). In the example of FIG3 , each discrete region 114 of the second doped region 113 forms a diode having the first doped region 111 and an optional intrinsic region 112. That is, in the example of FIG3 , the radiation absorbing layer 110 has a plurality of diodes (more specifically, 7 diodes correspond to 7 picture elements 150 of one column in the array of FIG1 , and for simplicity, only 2 picture elements 150 are marked in FIG3 ). The plurality of diodes may have an electrical contact 119A as a common electrode. The first doped region 111 may also have a discrete portion.

The electronic device layer 120 may include an electronic system 121 suitable for processing or interpreting signals generated by radiation incident on the radiation absorbing layer 110. The electronic system 121 may include analog circuits such as filter networks, amplifiers, integrators, and comparators, or digital circuits such as microprocessors and memories. The electronic system 121 may include one or more ADCs (analog-to-digital converters). The electronic system 121 may include components shared by each pixel 150 or components dedicated to a single pixel 150. For example, the electronic system 121 may include an amplifier dedicated to each pixel 150 and a microprocessor shared between all pixels 150. The electronic system 121 may be electrically connected to the pixel 150 through the through hole 131. The spaces between the vias may be filled with a filling material 130, which may increase the mechanical stability of the connection between the electronic device layer 120 and the radiation absorbing layer 110. Other bonding techniques may connect the electronic system 121 to the element 150 without using vias 131.

When radiation from a radiation source (not shown) strikes the radiation absorbing layer 110 including the diode, the radiation particles may be absorbed and one or more electric carriers (e.g., electrons, holes) may be generated by a variety of mechanisms. The electric carriers may drift to an electrode of one of the diodes under an electric field. The electric field may be an external electric field. The electrical contacts 119B may include discrete portions, each of which is in electrical contact with the discrete region 114. The term "electrical contact" may be used interchangeably with the term "electrode". In an embodiment, the charge carriers can drift in various directions so that the charge carriers generated by a single radiation particle are substantially not shared by two different discrete regions 114 (here "substantially not...shared" means that less than 2%, less than 0.5%, less than 0.1%, or less than 0.01% of these charge carriers flow to a different discrete region 114 compared to the rest of the charge carriers). The charge carriers generated by the radiation particles incident on the surrounding area of the coverage of one of these discrete regions 114 are substantially not shared with another of these discrete regions 114. The picture element 150 associated with the discrete region 114 can be a region around the discrete region 114 in which substantially all (more than 98%, more than 99.5%, more than 99.9%, or more than 99.99%) of the charge carriers generated by radiation particles incident therein flow toward the discrete region 114. That is, less than 2%, less than 1%, less than 0.1%, or less than 0.01% of these charge carriers flow through the picture element 150.

FIG4 schematically illustrates a detailed cross-sectional view of the radiation detector 100 of FIG1 along line 2-2 according to an alternative embodiment. More specifically, the radiation absorbing layer 110 may include resistors of semiconductor materials such as silicon, germanium, GaAs, CdTe, CdZnTe, or combinations thereof, but does not include diodes. The semiconductor material may have a high quality attenuation coefficient for the radiation of interest. In one embodiment, the electronic device layer 120 of FIG4 is similar to the electronic device layer 120 of FIG3 in structure and function.

When radiation strikes the radiation absorbing layer 110, which includes a resistor but does not include a diode, it can be absorbed and generate one or more charge carriers through a variety of mechanisms. The radiation particles can generate 10 to 100,000 charge carriers. The charge carriers can drift to the electrical contacts 119A and 119B under an electric field. The electric field can be an external electric field. The electrical contact 119B can include a discrete portion. In an embodiment, the charge carriers can drift in various directions so that the charge carriers generated by a single radiation particle are substantially not shared by two different discrete portions of the electrical contact 119B (here "substantially not...shared" means that less than 2%, less than 0.5%, less than 0.1%, or less than 0.01% of these charge carriers flow to a different discrete portion compared to the rest of the charge carriers). The charge carriers generated by the radiation particles incident on the surrounding area of the coverage of one of these discrete portions of the electrical contact 119B are substantially not shared with another of these discrete portions of the electrical contact 119B. The picture element 150 associated with the discrete portion of the electrical contact 119B can be a region around the discrete portion in which substantially all (more than 98%, more than 99.5%, more than 99.9%, or more than 99.99%) of the charge carriers generated by the radiation particles incident therein flow toward the discrete portion of the electrical contact 119B. That is, less than 2%, less than 0.5%, less than 0.1%, or less than 0.01% of these charge carriers flow through the picture element associated with a discrete portion of the electrical contact 119B.

Radiation Detector Package

FIG5 schematically shows a top view of a radiation detector package 500 including a radiation detector 100 and a printed circuit board (PCB) 510. The term "PCB" used herein is not limited to a specific material. For example, the PCB may include a semiconductor. The radiation detector 100 may be mounted to the PCB 510. For clarity, the wiring between the radiation detector 100 and the PCB 510 is not shown. The package 500 may have one or more radiation detectors 100. The PCB 510 may include an input/output (I/O) area 512 (e.g., for accommodating bonding wires 514) that is not covered by the radiation detector 100. The radiation detector 100 may have an active area 190, which is where the picture element 150 ( FIG1 ) is located. The radiation detector 100 may have a peripheral region 195 near the edge of the radiation detector 100. The peripheral region 195 has no picture elements 150, and the radiation detector 100 does not detect radiation particles incident on the peripheral region 195.

Image sensor

FIG6 schematically shows a cross-sectional view of an image sensor 600 according to an embodiment. The image sensor 600 may include one or more radiation detector packages 500 of FIG5 mounted to a system PCB 650. The electrical connection between the PCB 510 and the system PCB 650 may be made through bonding wires 514. To accommodate the bonding wires 514 on the PCB 510, the PCB 510 may have an I/O area 512 that is not covered by the radiation detector 100. To accommodate the bonding wires 514 on the system PCB 650, there may be gaps between the packages 500. The gaps may be about 1 mm or larger. Radiation particles incident on the peripheral area 195, the I/O area 512, or the gaps cannot be detected by the package 500 on the system PCB 650. The dead zone of a radiation detector (e.g., radiation detector 100) is an area of the radiation receiving surface of the radiation detector on which radiation particles incident thereon cannot be detected by the radiation detector. The dead zone of a package (e.g., package 500) is an area of the radiation receiving surface of the package on which radiation particles incident thereon cannot be detected by one or more radiation detectors in the package. In this example shown in Figures 5 and 6, the dead zone of package 500 includes peripheral area 195 and I/O area 512. The dead zone (e.g., 688) of an image sensor (e.g., image sensor 600) having a group of packages (e.g., packages 500 mounted on the same PCB and arranged in the same layer or different layers) includes a combination of the dead zones of the packages in the group and the gaps between the packages.

In an embodiment, the self-operating radiation detector 100 (FIG. 1) can be considered as an image sensor. In an embodiment, the self-operating package 500 (FIG. 5) can be considered as an image sensor.

Image sensor 600 including radiation detector 100 may have a dead zone 688 in active area 190 of radiation detector 100. However, image sensor 600 may capture multiple partial images of an object or scene (not shown) one by one, and these captured partial images may then be stitched together to form a stitched image of the entire object or scene.

The term "image" in this patent application (including the scope of the patent application) is not limited to the spatial distribution of properties of radiation (such as intensity). For example, the term "image" can also include the spatial distribution of the density of a substance or element.

Diffuser

7 schematically shows a perspective view of a diffraction instrument 700 according to an embodiment. In an embodiment, the diffraction instrument 700 may include a radiation source 710, one or more calibration patterns 732, and an image sensor 602.

Object

In an embodiment, as shown, object 720 can be located between radiation source 710 and image sensor 602. Object 720 can include single crystal material. Alternatively, object 720 can include crystalline material powder. There is no limitation on the crystallinity of object 720.

Radiation source

In an embodiment, the radiation source 710 may transmit a first radiation beam 711 to the object 720. The radiation source 710 may also transmit a second radiation beam 712 to the calibration pattern 732.

In an embodiment, the first radiation beam 711 may include X-ray photons. Specifically, the first radiation beam 711 may include monochromatic X-ray photons. In an embodiment, the first radiation beam 711 may be a pencil beam. In an embodiment, the second radiation beam 712 may include X-ray photons.

Calibration pattern

For illustration, as shown in FIG7 , there are six calibration patterns 732. In an embodiment, calibration pattern 732 may be opaque to second radiation beam 712. Alternatively, calibration pattern 732 may interact with second radiation beam 712 in some other manner. In an embodiment, calibration pattern 732 may be on support plate 730. In an embodiment, support plate 730 may be transparent (or not opaque) to radiation beams 711 and 712.

Diffractometer Image Sensor

In an embodiment, the image sensor 602 of the diffractometer 700 may be similar in structure and function to the image sensor 600 of Figure 6. In an embodiment, the image sensor 602 may include one or more active regions 190 (eg, three active regions 190 as shown).

In an embodiment, each of the three active regions 190 of the image sensor 602 may include a first portion 190a and a second portion 190b. In other words, the three active regions 190 include three first portions 190a and three second portions 190b, respectively. In an embodiment, the three first portions 190a may be completely separated from (i.e., not a part of) the three second portions 190b. In other words, none of the sensing elements 150 of the three active regions 190 is in both the first portion 190a and the second portion 190b at the same time.

Diffractometer Operation

In an embodiment, the diffractometer 700 may operate as follows: While the first radiation beam 711 is being transmitted from the radiation source 710 to the object 720 , the three first portions 190 a may collectively capture a first image of a diffraction pattern generated by the first radiation beam 711 being diffracted by the object 720 .

In an embodiment, after capturing a first image of the diffraction pattern, the image sensor 602 may be moved to another position, and then, while the first radiation beam 711 is still being transmitted from the radiation source 710 to the object 720, the three first portions 190a may jointly capture a second image of the diffraction pattern. In an embodiment, the other position of the image sensor 602 may be selected so that each gap 192 between the three active regions 190 when capturing the first image is on the active region 190 when capturing the second image. In other words, the other position of the image sensor 602 is selected so that the gaps 192 between the three active regions 190 are scanned by the three active regions 190.

In an embodiment, while the second radiation beam 712 is being transmitted from the radiation source 710 to the calibration pattern 732, the three second portions 190b may jointly capture an image of the calibration pattern 732 based on the interaction between the second radiation beam 712 and the calibration pattern 732. The interaction between the second radiation beam 712 and the calibration pattern 732 may include the following scenarios: (A) some radiation particles of the second radiation beam 712 incident on the calibration pattern 732 are blocked by the calibration pattern 732; (B) some radiation particles of the second radiation beam 712 incident on the calibration pattern 732 travel through the calibration pattern 732 without changing their directions; and (C) some radiation particles of the second radiation beam 712 incident on the calibration pattern 732 collide with atoms of the calibration pattern 732, thereby changing their directions.

In an embodiment, when the three second parts 190b capture the image of the calibration pattern 732 together, each of the three second parts 190b can capture the image of at least one calibration pattern 732. For example, as shown in Figures 7 and 8, each of the three second parts 190b captures the image of two calibration patterns 732.

In an embodiment, diffraction device 700 can determine the crystal structure of object 720 based on (A) the first and second images of the diffraction pattern and (B) the image of calibration pattern 732. The image of calibration pattern 732 can be used to determine the position of image sensor 602 or the position of active area 190. The position of calibration pattern 732 relative to first radiation beam 711 is known and can be fixed. Calibration pattern 732 can be integral with radiation source 710.

In an embodiment, the image sensor 602 may capture a first image of the diffraction pattern and an image of the calibration pattern 732 simultaneously (i.e., in the same exposure). Alternatively, the image sensor 602 may capture a second image of the diffraction pattern and an image of the calibration pattern 732 simultaneously (i.e., in the same exposure). Either way, as a result, at least one radiation particle of the first radiation beam 711 and at least one radiation particle of the second radiation beam 712 are emitted from the radiation source 710 simultaneously.

8 shows a resulting image captured by the image sensor 602 of the diffraction instrument 700 for the case where (A) the object 720 comprises a crystalline material powder, (B) a first image of a diffraction pattern and an image of a calibration pattern 732 are captured in the same exposure, and (C) the first radiation beam 711 and radiation particles resulting from diffraction of the first radiation beam 711 by the object 720 are prevented from reaching the three second portions 190b of the three active regions 190. The resulting image of FIG8 includes a first image of a diffraction pattern (upper portion) and images of six calibration patterns 732 (lower portions).

Flowchart outlining the operation of the diffractometer

FIG9 shows a flow chart 900 summarizing the operation of the above-described diffractometer 700 according to an embodiment. In step 910, the operation includes sending a first radiation beam to an object. For example, in the above-described embodiment, referring to FIG7 , the first radiation beam 711 is sent to the object 720.

In step 920, the operation includes: using the respective M first portions of the M active areas of the image sensor of the system to capture N images of the diffraction pattern generated by the first radiation beam being diffracted by the object, where M and N are positive integers. For example, in the above embodiment, referring to FIG. 7 , the three first portions 190 a of the three active areas 190 of the image sensor 602 of the diffractometer 700 jointly capture the first image of the diffraction pattern generated by the first radiation beam 711 being diffracted by the object 720; thereafter, the three first portions 190 a of the three active areas 190 jointly capture the second image of the diffraction pattern. Here, M=3 and N=2.

In step 930, the operation includes sending the second radiation beam to P calibration patterns, where P is a positive integer. For example, in the above embodiment, referring to FIG. 7, the second radiation beam 712 is sent to 6 calibration patterns 732 (here, P=6).

In step 940, the operation includes: using the respective M second portions of the M active areas of the image sensor to capture images of the P calibration patterns based on the interaction between the second radiation beam and the P calibration patterns, wherein each of the M second portions captures an image of at least one calibration pattern of the P calibration patterns. For example, in the above-mentioned embodiment, referring to FIG. 7 , the respective three second portions 190 b of the three active areas 190 of the image sensor 602 jointly capture images of the six calibration patterns 732 based on the interaction between the second radiation beam 712 and the six calibration patterns 732, wherein each second portion 190 b captures an image of at least one calibration pattern 732.

In step 950, the operation includes determining the crystal structure of the object based on (A) N images of the diffraction pattern and (B) images of the P calibration patterns, wherein none of the sensing elements of the M active regions are simultaneously in (A) a portion of the M first portions and (B) a portion of the M second portions. For example, in the above-described embodiment, referring to FIG. 7 , the diffractometer 700 determines the crystal structure of the object 720 based on (A) 2 images of the diffraction pattern (i.e., the first image and the second image) and (B) images of the 6 calibration patterns, wherein none of the sensing elements 150 of the 3 active regions 190 are simultaneously in (A) the first portion 190a and (B) the second portion 190b.

Other embodiments

Collimator

7 , a collimator (not shown) may be used to prevent the first radiation beam 711 and radiation particles generated by the first radiation beam 711 being diffracted by the object 720 from reaching the three second portions 190 b of the three active regions 190. In an embodiment, the collimator may include a material that blocks and absorbs X-rays (e.g., tungsten).

Detailed determination of crystal structure

In an embodiment, referring to step 950 of Figures 7 and 9, determining the crystal structure of the object 720 may include: (A) correcting two images of the diffraction pattern (i.e., the first image and the second image) based on the images of the six calibration patterns to obtain two corrected images of the diffraction pattern respectively; (B) stitching the two corrected images of the diffraction pattern to obtain a stitched image of the diffraction pattern; and (C) determining the crystal structure of the object 720 based on the stitched image of the diffraction pattern.

Alternatively, instead of the three steps (A), (B) and (C) described above, the determining of the crystal structure of the object 720 may include two steps. Specifically, the determining of the crystal structure of the object 720 may include: (A) correcting two images of the diffraction pattern (i.e., the first image and the second image) based on the images of the six calibration patterns to obtain two corrected images of the diffraction pattern respectively; and (B) determining the crystal structure of the object 720 based on the two corrected images of the diffraction pattern.

Alternative Embodiments

The image sensor has two rows of staggered active areas.

In the above embodiment, referring to FIG. 7 , the image sensor 602 has one column of active areas 190. In an alternative embodiment, referring to FIG. 10 , the image sensor 602 (as shown in a top view) may have two columns of active areas 190 (each column having three active areas 190). In an embodiment, the two columns of active areas 190 of the image sensor 602 may be arranged in a staggered manner as shown. In other words, the gap 192 between any two adjacent active areas 190 of one column is not aligned with the gap 192 between any two adjacent active areas 190 of another column.

In an embodiment, referring to FIG. 10 , the six first portions 190 a of the six active areas 190 of the image sensor 602 may be located between (A) the three second portions 190 b of the top row and (B) the three second portions 190 b of the bottom row, as shown.

Each second portion 190b has two separate areas

In the above-described embodiment, referring to Fig. 7, each second portion 190b of each active region 190 of the image sensor 602 has one region. In an alternative embodiment, referring to Fig. 11, each second portion 190b of each active region 190 of the image sensor 602 may have two separate regions 190b1 and 190b2, which sandwich the first portion 190a of each active region 190, as shown.

In an embodiment, referring to FIG11 , the arrangement of the calibration patterns 732 (12 in FIG11 ) can be such that when the image sensor 602 captures images of the 12 calibration patterns 732, each of the two regions 190b1 and 190b2 of the second portion 190b of each active region 190 captures an image of at least one calibration pattern 732. For example, as shown in FIG11 , each of the regions 190b1 and 190b2 captures an image of two calibration patterns 732.

Although various aspects and embodiments have been disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are for purposes of illustration and are not intended to be limiting, with the true scope and spirit being indicated by the appended patent claims.

2-2: Line 100: Radiation detector 111: First doping region 112: Intrinsic region 113: Second doping region 114: Discrete region 119A, 119B: Electrical contacts 110: Radiation absorption layer 120: Electronic device layer 121: Electronic system 130: Filling material 131: Through hole 150: Graphic element 190: Active region 190a: First part 190b: Second part 190b1, 190b2: Region 192: Gap 195: Peripheral region 500: Package 510: Printed circuit board 512: Input/output region 514: Bonding wire 600, 602: Image sensor 650: System PCB 688: Dead zone 700: Diffractometer 710: Radiation source 711: First radiation beam 712: Second radiation beam 720: Object 730: Support plate 732: Calibration pattern 900: Flow chart 910, 920, 930, 940, 950: Steps

FIG. 1 schematically illustrates a radiation detector according to an embodiment. FIG. 2 schematically illustrates a simplified cross-sectional view of a radiation detector according to an embodiment. FIG. 3 schematically illustrates a detailed cross-sectional view of a radiation detector according to an embodiment. FIG. 4 schematically illustrates a detailed cross-sectional view of a radiation detector according to an alternative embodiment. FIG. 5 schematically illustrates a top view of a radiation detector package including a radiation detector and a printed circuit board (PCB) according to an embodiment. FIG. 6 schematically illustrates a cross-sectional view of an image sensor including the package of FIG. 5 mounted to a system PCB (printed circuit board) according to an embodiment. FIG. 7 schematically illustrates a perspective view of a diffractometer including an image sensor according to an embodiment. FIG. 8 shows an image captured by an image sensor of a diffractometer according to an embodiment. FIG. 9 shows a flow chart outlining the operation of a diffractometer according to an embodiment. FIG. 10 shows a top view of an image sensor of a diffractometer according to an alternative embodiment. FIG. 11 shows a top view of an image sensor of a diffractometer according to another alternative embodiment.

190: Active area

190a: Part I

190b: Part 2

192: Gap

602: Image sensor

700:Diffractometer

710: Radiation source

711: The First Beam

712: Second beam

720: Object

730:Support plate

732: Calibration pattern

Claims (23)

A method for performing diffraction measurement, comprising: sending a first radiation beam to an object; using respective M first portions of M active areas of an image sensor of the system to capture N images of diffraction patterns generated by diffraction of the first radiation beam by the object, wherein M and N are positive integers greater than 1; sending a second radiation beam to P calibration patterns, wherein P is a positive integer; using respective M second portions of the M active areas of the image sensor to capture N images of diffraction patterns generated by diffraction of the first radiation beam by the object based on the distance between the second radiation beam and the P calibration patterns; interact with each other, capture images of the P calibration patterns, wherein each of the M second portions captures an image of at least one calibration pattern of the P calibration patterns; and determine the crystal structure of the object based on (A) the N images of the diffraction patterns and (B) the images of the P calibration patterns, wherein no sensing element among all the sensing elements of the M active areas is simultaneously in (A) a portion of the M first portions and (B) a portion of the M second portions. A method for performing diffraction measurement as described in claim 1, wherein the first radiation beam and the second radiation beam include X-ray photons. A method for performing diffraction measurement as described in claim 1, wherein the first radiation beam includes monochromatic X-ray photons. A method for performing diffraction measurement as described in claim 1, wherein the object comprises (A) a single crystal material or (B) a crystalline material powder. A method for performing diffraction measurement as described in claim 1, wherein the system includes a collimator configured to prevent the first radiation beam and radiation particles generated by the first radiation beam being diffracted by the object from reaching the M second portions of the M active regions. A method for performing diffraction measurement as described in claim 1, wherein the first radiation beam is a pencil beam. A method for performing diffraction measurement as described in claim 1, wherein at least one radiation particle of the first radiation beam and at least one radiation particle of the second radiation beam are sent simultaneously. A method for performing diffraction measurement as described in claim 1, wherein the determining the crystal structure of the object comprises: based on the images of the P calibration patterns, correcting the N images of the diffraction pattern to obtain N corrected images of the diffraction pattern respectively; splicing the N corrected images of the diffraction pattern to obtain a spliced image of the diffraction pattern; and determining the crystal structure of the object based on the spliced image of the diffraction pattern. A method for performing diffraction measurement as described in claim 1, wherein determining the crystal structure of the object comprises: based on the images of the P calibration patterns, correcting the N images of the diffraction pattern to obtain N corrected images of the diffraction pattern respectively; and determining the crystal structure of the object based on the N corrected images of the diffraction pattern. A method for performing diffraction measurement as described in claim 1, wherein N=2, and wherein when the image sensors are respectively located at N positions so that the gaps between the M active areas are scanned by the M active areas, the N images of the diffraction pattern are captured. A method for performing diffraction measurement as described in claim 1, wherein the M active regions are arranged into a first column of active regions and a second column of active regions, and wherein the gap between any two adjacent active regions in the first column is not aligned with the gap between any two adjacent active regions in the second column. A method for performing diffraction measurement as described in claim 11, wherein the M first portions are located between (A) portions of the M second portions of the first column and (B) portions of the M second portions of the second column. A method for performing diffraction measurement as described in claim 1, wherein the M active regions form a column of active regions, and wherein, for each of the M active regions, the second portion of each active region includes two regions sandwiching the first portion of each active region. A method for performing diffraction measurement as described in claim 13, wherein, in the image capturing the P calibration patterns, each of the two regions of the second portion of each active area captures an image of at least one calibration pattern of the P calibration patterns. A system for performing diffraction measurement, comprising: an image sensor, the image sensor comprising M active areas, the M active areas respectively comprising M first parts and M second parts, M being a positive integer greater than 1; a radiation source; and P calibration patterns, P being a positive integer, wherein the radiation source is configured to send a first radiation beam to an object, wherein the M first parts are configured to capture N images of a diffraction pattern generated by the first radiation beam being diffracted by the object, N being a positive integer greater than 1, wherein the radiation source is configured to send a second radiation beam to the P calibration patterns, wherein the M second parts are configured to capture N images of a diffraction pattern generated by the first radiation beam being diffracted by the object, N being a positive integer greater than 1, wherein the radiation source is configured to send a second radiation beam to the P calibration patterns, wherein the M second parts are configured to capture N images of a diffraction pattern generated by the first radiation beam being diffracted by the object, The portion is configured to capture images of the P calibration patterns based on an interaction between the second radiation beam and the P calibration patterns, wherein each of the M second portions captures an image of at least one of the P calibration patterns, wherein the system is configured to determine a crystal structure of the object based on (A) the N images of the diffraction pattern and (B) the images of the P calibration patterns, and wherein no sensing element among all the sensing elements of the M active areas is simultaneously in (A) a portion of the M first portions and (B) a portion of the M second portions. The system for performing diffraction measurement as described in claim 15 further includes a collimator, which is configured to prevent the first radiation beam and radiation particles generated by the diffraction of the first radiation beam by the object from reaching the M second parts of the M active regions. A system for performing diffraction measurement as described in claim 15, wherein at least one radiation particle of the first radiation beam and at least one radiation particle of the second radiation beam are emitted simultaneously. A system for performing diffraction measurement as described in claim 15, wherein the determining the crystal structure of the object comprises: based on the images of the P calibration patterns, correcting the N images of the diffraction pattern to obtain N corrected images of the diffraction pattern; stitching the N corrected images of the diffraction pattern to obtain a stitched image of the diffraction pattern; and determining the crystal structure of the object based on the stitched image of the diffraction pattern. A system for performing diffraction measurement as described in claim 15, wherein the determining the crystal structure of the object comprises: based on the images of the P calibration patterns, correcting the N images of the diffraction pattern to obtain N corrected images of the diffraction pattern respectively; and determining the crystal structure of the object based on the N corrected images of the diffraction pattern. A system for performing diffraction measurement as described in claim 15, wherein N=2, and wherein when the image sensors are respectively located at N positions so that the gaps between the M active areas are scanned by the M active areas, the N images of the diffraction pattern are captured. A system for performing diffraction measurement as described in claim 15, wherein the M active regions are arranged into a first column of active regions and a second column of active regions, and wherein the gap between any two adjacent active regions in the first column is not aligned with the gap between any two adjacent active regions in the second column. A system for performing diffraction measurement as described in claim 21, wherein the M first portions are located between (A) portions of the M second portions of the first column and (B) portions of the M second portions of the second column. A system for performing diffraction measurement as described in claim 15, wherein the M active regions form a column of active regions, and wherein, for each of the M active regions, the second portion of each active region includes two regions sandwiching the first portion of each active region.

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