TWI851989B - High specific heat package chip structure - Google Patents

Abstract

The present invention is a high specific heat package chip structure, which includes: a circuit substrate, the circuit substrate has a bottom and surrounding closed walls, the bottom has an opening at a relative position, and the surrounding closed walls surround a containing space; a processing chip, the processing chip is combined with the bottom of the circuit substrate and is in the containing space, and the volume of the containing space is larger than the volume of the processing chip, and the height of the processing chip is lower than the surrounding The height of the closed wall, there is a remaining storage space between the processing chip and the surrounding closed walls, and at least one high specific heat material is set in the remaining storage space; a heat conductive sheet, which is at least one layer of heat conductive material, and the heat conductive material covers the surface of the processing chip and the top of the surrounding closed walls; and a metal sheet, which covers the surface of the heat conductive sheet and vacuum seals the opening of the circuit substrate.

Description

High specific heat package chip structure

The present invention relates to a method for semiconductor packaging chips, which introduces high specific heat materials into a vacuum packaging structure to increase the multi-directional heat diffusion of waste heat generated by the chip in the lateral direction, thereby improving its waste heat removal effect.

The prior art is directed to a method for manufacturing a light-emitting package structure, as disclosed in the Republic of China patent number TWI692125B, which includes: implementing a preparation procedure: mounting a light-emitting unit on a substrate; implementing a glue application procedure: applying a sealant body on a first bonding area of the substrate; implementing a capping procedure: placing a cover plate on the substrate, wherein the cover plate has a second bonding area , the first bonding area and the second bonding area are bonded to each other through the encapsulation body; a vacuum process is implemented: an environmental pressure is reduced to a first pressure value, the first pressure value is lower than the original environmental pressure; a back pressure process is implemented: the environmental pressure around the packaging structure is adjusted to a second pressure value, the second pressure value is higher than the first pressure value; a curing process is implemented to cure the encapsulation body. The embodiment also provides a light-emitting packaging structure.

Prior art has been directed to wafer packaging devices and wafer packaging methods. For example, the Republic of China patent number TWI674659B discloses a wafer packaging device, including a sealed chamber, a carrier, a soft wafer, and an atmospheric air intake control valve. The sealed chamber includes a vacuum tank body and a cover body. The vacuum tank body has a receiving tank and an upper opening. The cover body covers the upper opening of the vacuum tank body to seal the receiving tank. The vacuum tank body is provided with a vacuum pumping port, and the cover body is provided with an air intake port. The carrier is disposed in the receiving tank of the vacuum tank body, and the carrier includes a wafer packaging area. The soft sheet is arranged inside the sealed chamber. The soft sheet includes an outer ring and a central part. The outer ring is fixed to the cover in an airtight manner. The central part corresponds to the air inlet and the central part corresponds to the wafer packaging area of the carrier. The atmospheric air intake control valve is connected to the air inlet. The atmospheric air intake control valve can control the flow of external atmospheric gas flowing through the air inlet into the sealed chamber.

Prior art has been directed to a thin film getter structure and a vacuum packaging structure with a micro heater, as disclosed in Chinese Patent No. CN215288005U, wherein the thin film getter structure comprises: a substrate; a heater formed on one side of a main surface of the substrate; and a getter film formed on the surface of the heater, wherein the heater comprises: a first insulating film; a thin film resistor formed on the upper surface of the first insulating film; and a second insulating film covering the thin film resistor, wherein both ends of the thin film resistor are electrodes exposed from the second insulating film. Another prior art is a PTFE sheet and die packaging method for improving the stability and maintainability of vacuum adsorption. As disclosed in the Republic of China patent publication number TWI687463B, it is a PTFE sheet spun from PTFE fibers with a diameter of less than 1 μm. The PTFE sheet has a Gore value in the range of 1 to 3, and the shrinkage rate in the direction orthogonal to the sheet winding direction when heated to 300°C is less than 10%. When encapsulating the die into the packaged body, the die is sandwiched between the tool for heating the die and the die, and the die can be adsorbed by the tool, and the adhesive component for fixing the die to the packaged body is prevented from adhering to the adsorption surface of the tool or the die.

The prior art is directed to a packaging structure with a micro heat pipe heat sink, as disclosed in Chinese patent number CN205609497U, which belongs to the field of semiconductor packaging technology. It includes a substrate, a chip is arranged on the substrate, a heat sink is arranged on the chip cover, the heat sink is electrically connected to the ground end of the substrate, the heat sink and the peripheral area of the chip are encapsulated with plastic packaging material, and a micro heat pipe heat sink is arranged in the central area of the heat sink, and the upper surface of the micro heat pipe heat sink is exposed to the surface of the plastic packaging material. The micro heat pipe is made in the central area of the heat sink. On the one hand, the micro heat pipe is vacuumed inside and an ethanol solution is injected to enhance the thermal conductivity in the structure and increase the heat dissipation. Compared with the packaging structure of the surface mounted heat sink, it can reduce the product size and achieve the purpose of miniaturization. Another prior art is directed to a packaging structure with a flat micro heat pipe radiator, as disclosed in Chinese patent number CN205609506U, which belongs to the field of semiconductor packaging technology, and includes a substrate, a chip is arranged on the substrate, the chip is encapsulated with a plastic encapsulation material, and a flat micro heat pipe radiator is arranged on the surface of the plastic encapsulation material. The micro heat pipe radiator is used to replace the traditional heat sink. On the one hand, the interior of the micro heat pipe is evacuated and an ethanol solution is injected to enhance the thermal conductivity in the structure, thereby increasing the heat dissipation. On the other hand, the size of the heat sink can be reduced to achieve the purpose of miniaturization. Another prior art is a method for vacuum liquid injection packaging of micro heat pipes under normal pressure. As disclosed in Chinese Patent No. CN101266111B, it includes two processes: liquid injection and packaging. Since the residual air in the micro heat pipe cavity and working liquid will seriously affect the performance of the micro heat pipe, it first adopts a combination of vacuum pumping and ultrasonic vibration to fill the entire cavity with the micro heat pipe working fluid. During the packaging process, a heating-cooling method is used to achieve a dynamic vapor-liquid balance inside the micro heat pipe, which can realize a controllable liquid injection amount, and finally the liquid injection hole is sealed with glue. Compared with the existing technology, it is low-cost, easy to operate, and can ensure a high vacuum degree of the micro heat pipe cavity.

The present invention is a high specific heat package chip structure, which comprises: a circuit substrate, the circuit substrate has a bottom and surrounding closed walls, the bottom has an opening at a relative position, and the surrounding closed walls surround a containing space; a processing chip, the processing chip is combined with the bottom of the circuit substrate and is in the containing space, and the volume of the containing space is larger than the volume of the processing chip, and the height of the processing chip is lower than the surrounding closed walls. The height of the surrounding closed wall, there is a remaining storage space between the processing chip and the surrounding closed wall, and at least one high specific heat material is arranged in the remaining storage space; a heat conductive sheet, the heat conductive sheet is at least one layer of heat conductive material, the heat conductive material covers the surface of the processing chip and the top of the surrounding closed wall; and a metal sheet, the metal sheet covers the surface of the heat conductive sheet and vacuum seals the opening of the circuit substrate. The circuit substrate has a conductive circuit pattern and an insulating resin coated on the surface of the conductive circuit pattern. The circuit substrate is a stiff material or a flexible material. The outer surface of the processing chip has at least one side of an insulating package. The high specific heat material is at least one insulating liquid, insulating colloid, insulating gel, and insulating paste, and the volume ratio of the high specific heat material to the remaining storage space is 5-100%. The thermal conductive sheet is a multi-layer structure, and each layer is formed by alternating and overlapping different insulating and non-insulating thermal conductive materials. The contact surface between the thermal conductive sheet and the top of the processing chip surface and the surrounding closed wall is an insulating adhesive layer. The contact surface between the thermal conductive sheet and the metal sheet is an insulating adhesive layer. The material of the metal sheet is at least one of stainless steel, aluminum and copper. The area of the metal sheet is equal to or larger than the area of the heat conducting sheet, and the metal sheet and the heat conducting sheet are bonded to each other in whole or in part. The heat conducting sheet of the present invention can seal high specific heat materials, and the high specific heat materials can enhance the lateral heat conduction effect, remove the heat of the processing chip, and enhance the operation performance of the processing chip. It does not require the complicated introduction process of the heat pipe, which is different from the conventional technology, and its structure is novel, advanced and practical. Regarding the technology, means and effects adopted by this creation, a better embodiment is given and detailed description is provided below with diagrams. It is believed that the above-mentioned purpose, structure and characteristics of this creation can be understood in depth and concretely.

101: Circuit board

1011: Bottom

1012: Closed walls all around

10121: The top of the surrounding closed wall

1013: Storage space

10131: Remaining storage space

1014: Open mouth

201: Processing chip

301: Heat conducting sheet

401:Metal sheet

501: High specific heat material

Figure 1 is a perspective view showing the structure of the high specific heat package chip of this invention.

Figure 2 is a disassembled diagram showing the structure of the high specific heat package chip of this invention.

Figure 3 shows the cross-sectional view of the high specific heat package chip structure of this invention.

Figure 4 is a disassembled diagram showing another embodiment of the invention, a high specific heat package chip structure.

Figure 5 is a cross-sectional view showing another embodiment of the invention, a high specific heat package chip structure.

The following is a specific implementation example to illustrate the implementation of this creation. People familiar with this art can easily understand the other advantages and effects of this creation from the content disclosed in this manual. This creation can also be implemented or applied through other different specific implementation examples. The details in this manual can also be modified and changed based on different viewpoints and applications without deviating from the spirit of this creation.

First, please read Figure 1, which is a perspective view of the high specific heat package chip structure of the present invention, followed by Figure 2, which is an exploded view of the high specific heat package chip structure of the present invention, and Figure 3, which is a cross-sectional view of the high specific heat package chip structure of the present invention. The cross-sectional view is a longitudinal cut of the center of the high specific heat package chip structure of Figure 2, illustrating a high specific heat package chip structure, which includes: a circuit substrate 101, the circuit substrate 101 has a bottom 1011 and surrounding closed walls 1012, the bottom 1011 has an opening 1014 at a relative position, and the surrounding closed walls 1012 surround a accommodating space 1013; a processing chip 201, the processing chip 201 is combined with the bottom 1011 of the circuit substrate 101 and at The volume of the accommodating space 1013 is larger than the volume of the processing chip 201, the height of the processing chip 201 is lower than the height of the surrounding closed wall 1012, and there is a remaining accommodating space 10131 between the processing chip 201 and the surrounding closed wall 1012. At least one A high specific heat material 501; a heat conductive sheet 301, the heat conductive sheet 301 is at least one layer of heat conductive material, the heat conductive material covers the surface of the processing chip 201 and the top 10121 of the surrounding closed wall; and a metal sheet 401, the metal sheet 401 covers the surface of the heat conductive sheet 301 and vacuum seals the opening 1014 of the circuit substrate 101. The circuit substrate 101 has a conductive circuit pattern and an insulating resin coated on the surface of the conductive circuit pattern. The circuit substrate 101 is a stiff material or a flexible material. The outer surface of the processing chip 201 has at least one side of an insulating package. The high specific heat material 501 is at least one of an insulating liquid, an insulating colloid, an insulating gel, and an insulating paste, and the high specific heat material 501 occupies 5 to 100% of the volume of the remaining storage space 10131.

The heat conducting sheet 301 is a multi-layer structure, each layer of which is made of different insulating and non-insulating heat conducting materials alternately stacked. The contact surface of the heat conducting sheet 301 with the surface of the processing chip 201 and the top end 10121 of the surrounding closed wall is an insulating adhesive layer. The contact surface of the heat conducting sheet 301 with the metal sheet 401 is an insulating adhesive layer. The material of the metal sheet 401 is at least one of stainless steel, aluminum and copper. The area of the metal sheet 401 is larger than the area of the thermal conductive sheet 301. The metal sheet 401 and the thermal conductive sheet 301 are partially bonded to each other, and one side of the metal sheet 401 is partially not in contact with the thermal conductive sheet 301. The thermal conductive sheet 301 and the metal sheet 401 are separate independent components, wherein the thermal conductive sheet 301 has a double-sided insulating adhesive layer surface. The thermal conductive sheet 301 and the metal sheet 401 are bonded by the insulating adhesive layer of the thermal conductive sheet 301 to achieve the packaging effect of the high specific heat package chip structure. After the packaging is completed, the external surface of the metal sheet 401 can be bonded with an external heat dissipation device such as a heat sink.

In order to make the review committee further understand the application scenario of another embodiment of the present invention, FIG. 4 is an exploded view of another embodiment of the present invention, and FIG. 5 is a cross-sectional view of another embodiment of the present invention. The cross-sectional view is a longitudinal section of the center of another embodiment of the present invention, which illustrates another high specific heat package chip structure of the present invention, comprising: a circuit substrate 101, the circuit substrate 101 has a bottom 1011 and surrounding closed walls 1012, the bottom 1011 has an opening 1014 at a relative position, and the surrounding closed walls 1012 surround a containing space 1013; a processing chip 201, the processing chip 201 is combined with the circuit substrate 10 1 and in the accommodating space 1013, and the volume of the accommodating space 1013 is larger than the volume of the processing chip 201, the height of the processing chip 201 is lower than the height of the surrounding closed wall 1012, and there is a remaining accommodating space 10131 between the processing chip 201 and the surrounding closed wall 1012, and the remaining accommodating space 10131 is provided At least one high specific heat material 501; a heat conductive sheet 301, the heat conductive sheet 301 is at least one layer of heat conductive material, the heat conductive material covers the surface of the processing chip 201 and the top end 10121 of the surrounding closed wall; and a metal sheet 401, the metal sheet 401 covers the surface of the heat conductive sheet 301 and vacuum seals the opening 1014 of the circuit substrate 101. The circuit substrate 101 has a conductive circuit pattern and an insulating resin coated on the surface of the conductive circuit pattern. The circuit substrate 101 is a stiff material or a flexible material. The outer surface of the processing chip 201 has at least one side of an insulating package. The high specific heat material 501 is at least one of an insulating liquid, an insulating colloid, an insulating gel, and an insulating paste, and the high specific heat material 501 occupies 5 to 100% of the volume of the remaining storage space 10131.

The heat conducting sheet 301 is a multi-layer structure, each layer of which is formed by alternating and stacking different insulating and non-insulating heat conducting materials. The contact surface between the heat conducting sheet 301 and the surface of the processing chip 201 and the top end 10121 of the surrounding closed wall is an insulating adhesive layer. The contact surface between the heat conducting sheet 301 and the metal sheet 401 is an insulating adhesive layer. The material of the metal sheet 401 is at least one of stainless steel, aluminum and copper. The area of the metal sheet 401 is equal to the area of the heat conducting sheet 301, and the metal sheet 401 and the heat conducting sheet 301 are fully bonded. The heat conducting sheet 301 and the metal sheet 401 are integrated components, wherein the other side where the heat conducting sheet 301 and the metal sheet 401 are bonded has an insulating adhesive layer, and the surface of the insulating adhesive layer of the heat conducting sheet 301 of the integrated component can be directly bonded to the surface of the processing chip 201 and the top end 10121 of the surrounding sealing wall to achieve the packaging effect of the high specific heat package chip structure. After the packaging is completed, the metal sheet 401 can replace an external heat dissipation device such as an external heat sink, or the external surface of the metal sheet 401 can be bonded to an external heat dissipation device such as a heat sink fin.

The present invention is a high specific heat package chip structure. The structural features of the present invention are conducive to the simplified structure of vacuum packaging. It is different from the previous known technologies and is novel, advanced and practical. Therefore, it can effectively improve the lack of knowledge and has considerable practicality in use.

In summary, the specific structure disclosed in the embodiment of the present invention can indeed provide the heat conduction application of the processing chip 201. The heat conductive sheet 301 of the present invention can seal the high specific heat material 501. The high specific heat material 501 improves the lateral heat conduction effect and can improve the operating performance of the processing chip 201. There is no need for the complicated introduction process of the heat pipe, and the time spent on the packaging process is greatly shortened. In terms of its overall structure, it has never been seen in similar products and has not been disclosed before the application. It has truly met the statutory requirements of the Patent Law, and therefore an invention patent application is filed in accordance with the law.

However, the above is only a preferred embodiment of this creation, and it cannot be used to limit the scope of implementation of this creation. In other words, all equivalent changes and modifications made according to the scope of the patent application of this creation and the content of the creation specification should still fall within the scope of the patent of this creation.

101: Circuit board

201: Processing chip

301: Heat conducting sheet

401:Metal sheet

501: High specific heat material

Claims (8)

A high specific heat package chip structure comprises: a circuit substrate, the circuit substrate having a bottom and surrounding closed walls, the bottom having an opening at a relative position, the surrounding closed walls surrounding a containing space, the circuit substrate having a conductive circuit pattern, and an insulating resin coated on the surface of the conductive circuit pattern; a processing chip, the processing chip is combined with the bottom of the circuit substrate and in the containing space, and the volume of the containing space is larger than the volume of the processing chip, the height of the processing chip is lower than the height of the surrounding closed walls, and the processing chip and the surrounding closed walls are in contact with each other. There is a residual storage space between the closed walls, and at least one high specific heat material is arranged in the residual storage space. The high specific heat material is at least one insulating liquid, insulating colloid, insulating gel, and insulating paste. The volume ratio of the high specific heat material to the residual storage space is 5-100%; a heat conductive sheet, which is at least one layer of heat conductive material, and the heat conductive material covers the surface of the processing chip and the top of the surrounding closed walls; and a metal sheet, which covers the surface of the heat conductive sheet and vacuum seals the opening of the circuit substrate. The high specific heat package chip structure as described in claim 1, wherein the circuit substrate is a stiff material or a flexible material. A high specific heat package chip structure as described in claim 1, wherein the outer surface of the processing chip has at least one side of insulating packaging. The high specific heat package chip structure as described in claim 1, wherein the thermal conductive sheet is a multi-layer structure, each layer of which is made of different insulating and non-insulating thermal conductive materials stacked alternately. The high specific heat package chip structure as described in claim 1, wherein the contact surface between the heat conductive sheet and the processing chip surface and the top of the surrounding sealing wall is an insulating adhesive layer. The high specific heat package chip structure as described in claim 1, wherein the contact surface between the thermal conductive sheet and the metal sheet is an insulating adhesive layer. The high specific heat package chip structure as described in claim 1, wherein the material of the metal sheet is at least one of stainless steel, aluminum and copper. The high specific heat package chip structure as described in claim 1, wherein the area of the metal sheet is equal to or greater than the area of the thermal conductive sheet, and the metal sheet and the thermal conductive sheet are bonded to each other in whole or in part.

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