TWI851039B - Package structure of image sensor - Google Patents
Package structure of image sensor Download PDFInfo
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- TWI851039B TWI851039B TW112106471A TW112106471A TWI851039B TW I851039 B TWI851039 B TW I851039B TW 112106471 A TW112106471 A TW 112106471A TW 112106471 A TW112106471 A TW 112106471A TW I851039 B TWI851039 B TW I851039B
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- Prior art keywords
- image sensor
- substrate
- baffle
- top surface
- packaging
- Prior art date
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000012790 adhesive layer Substances 0.000 claims abstract description 6
- 239000003292 glue Substances 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000000565 sealant Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 210000000078 claw Anatomy 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
本發明涉及半導體技術領域，更具體地說，它涉及一種圖像感測器的封裝結構。The present invention relates to the field of semiconductor technology, and more particularly, to a packaging structure of an image sensor.
圖像感測器常常應用在圖像成像方面，例如攝影、攝像方面，是利用光電器件的光電轉換功能將感光面上的光像轉換為與光像成相應比例關係的電訊號。Image sensors are often used in image formation, such as photography and videography. They use the photoelectric conversion function of photoelectric devices to convert the light image on the photosensitive surface into an electrical signal that is proportional to the light image.
目前車載圖像感測器的封裝要求高可靠性，高品質。消費電子的圖像感測器都是用有機基板作為載體封裝的，此類封裝結構無法達到車載要求，這類的封裝通常都是在基板上設置晶片，在晶片上鋪設透鏡，在基板與晶片之間焊接引線，在基板的頂面邊緣固定擋板，在擋板內填充封裝膠，使得封裝膠、透鏡以及擋板的頂面齊平。At present, the packaging of automotive image sensors requires high reliability and high quality. Consumer electronic image sensors are all packaged with organic substrates as carriers. This type of packaging structure cannot meet the requirements of automotive applications. This type of packaging usually places a chip on the substrate, a lens on the chip, welds leads between the substrate and the chip, fixes a baffle on the top edge of the substrate, and fills the baffle with packaging glue to make the packaging glue, lens, and the top of the baffle flush.
這種車載圖像感測器封裝作業時，由於引線與擋板之間的距離受到了及其的機械結構限制，故而導致兩者之間間距需要較小，但在目前的圖像感測器的體積極小，需要再進一步縮小引線與擋板之間的距離時，就會很容易導致在使用過程中引線在外界作用力的影響下導致其兩個焊點發生脫落、破損的情況。During the packaging operation of this type of automotive image sensor, the distance between the lead and the baffle is subject to the mechanical structure limit, so the distance between the two needs to be smaller. However, the current image sensor is extremely small, and if the distance between the lead and the baffle needs to be further reduced, it will easily cause the two solder joints of the lead to fall off and be damaged under the influence of external forces during use.
因此需要提出一種新的方案來解決這個問題。Therefore, a new solution needs to be proposed to solve this problem.
針對現有技術存在的不足，本發明的目的在於提供一種圖像感測器的封裝結構，可以滿足圖像感測器高標準要求的封裝。In view of the shortcomings of the prior art, the purpose of the present invention is to provide a packaging structure for an image sensor that can meet the high standard requirements of the image sensor packaging.
本發明的上述技術目的是通過以下技術方案得以實現的：一種圖像感測器的封裝結構，包括基板； 晶片，其固定在所述基板上； 引線，其兩端分別焊接在所述基板以及晶片上； 擋板，固定連接在基板頂面邊緣； 支撐側板，固定連接在晶片頂面，且其形成口字型截面； 透鏡，固定連接在支撐側板頂面，其封閉支撐側板頂面，並正對晶片設置； 封裝膠層，其填充於擋板內圈，並形成四稜臺狀結構。 The above technical objectives of the present invention are achieved through the following technical solutions: a packaging structure of an image sensor, including a substrate; a chip, which is fixed on the substrate; a lead, whose two ends are respectively welded on the substrate and the chip; a baffle, which is fixedly connected to the edge of the top surface of the substrate; a supporting side plate, which is fixedly connected to the top surface of the chip and forms a square cross section; a lens, which is fixedly connected to the top surface of the supporting side plate, closes the top surface of the supporting side plate, and is arranged opposite to the chip; a packaging glue layer, which is filled in the inner circle of the baffle and forms a four-sided pyramid structure.
本發明進一步設置為：所述封裝膠層的側面形成若干受力斜面，所述受力斜面至引線的最小間距為N±2mm。The present invention is further configured as follows: a plurality of force-bearing inclined surfaces are formed on the side surface of the packaging glue layer, and the minimum distance between the force-bearing inclined surfaces and the leads is N±2mm.
本發明進一步設置為：所述擋板的高度小於透鏡的高度，且所述受力斜面的最低水平高度與擋板的高度相同。The present invention is further configured as follows: the height of the baffle is less than the height of the lens, and the lowest horizontal height of the force-bearing inclined surface is the same as the height of the baffle.
本發明進一步設置為：所述基板的底面焊接有若干導電接腳，若干所述導電接腳呈矩陣設置。The present invention is further configured as follows: a plurality of conductive pins are welded on the bottom surface of the substrate, and the plurality of conductive pins are arranged in a matrix.
本發明進一步設置為：所述封裝膠層採用環氧樹脂材質，且其顏色為不透光色彩。The present invention is further configured as follows: the packaging adhesive layer is made of epoxy resin material, and its color is opaque.
本發明進一步設置為：所述支撐側板為玻璃和/或聚醯亞胺和/或醯胺樹脂。The present invention is further configured as follows: the supporting side panels are glass and/or polyimide and/or amide resin.
本發明進一步設置為：所述擋板為熱固化封膠或UV膠。The present invention is further configured as follows: the baffle is a heat-curing sealant or a UV glue.
綜上所述，本發明具有以下有益效果：In summary, the present invention has the following beneficial effects:
通過設置本圖像感測器的封裝結構，可以使得最終得到的封裝結構上具有受力斜面，並且受力斜面盡可能保持與引線平行的狀態，一方面可以使得整個圖像感測器的封裝結構的體型做的更加小巧，另一方面也可以使得當圖像感測器的封裝結構的原本四個頂面稜線受力磕碰的時候，以線受力轉為面受力，減少局部的壓強，同時也可以使得作用力不會直接傳遞到引線上，使得引線承載較大的作用力而發生其兩端焊點脫落的情況。By setting up the packaging structure of the image sensor, the final packaging structure can have a force-bearing inclined surface, and the force-bearing inclined surface can be kept parallel to the lead as much as possible. On the one hand, the size of the entire image sensor packaging structure can be made smaller. On the other hand, when the original four top edge edges of the image sensor packaging structure are subjected to force and bumped, the line force is converted into surface force, thereby reducing local pressure. At the same time, the force will not be directly transmitted to the lead, causing the lead to bear a large force and cause the solder joints at both ends to fall off.
下面結合圖式和實施例，對本發明進行詳細描述。The present invention is described in detail below with reference to the drawings and embodiments.
實施例：Embodiment:
一種圖像感測器的封裝結構，如圖1-8所示，其包括： 基板1，基板1的底面焊接有若干導電接腳8，若干導電接腳8呈矩陣設置。 A packaging structure of an image sensor, as shown in Figures 1-8, includes: A substrate 1, a plurality of conductive pins 8 are welded to the bottom surface of the substrate 1, and the plurality of conductive pins 8 are arranged in a matrix.
晶片3，其固定在基板1上。The wafer 3 is fixed on the substrate 1 .
引線4，其兩端分別焊接在基板1以及晶片3上。The two ends of the lead 4 are welded to the substrate 1 and the chip 3 respectively.
支撐側板5，固定連接在晶片3頂面，且其形成口字型截面，支撐側板5為玻璃和/或聚醯亞胺和/或醯胺樹脂。The supporting side plate 5 is fixedly connected to the top surface of the chip 3 and forms a square-shaped cross section. The supporting side plate 5 is glass and/or polyimide and/or amide resin.
透鏡6，固定連接在支撐側板5頂面，其封閉支撐側板5頂面，並正對晶片3設置。The lens 6 is fixedly connected to the top surface of the supporting side plate 5, closes the top surface of the supporting side plate 5, and is arranged facing the chip 3.
擋板2，擋板2為熱固化封膠或UV膠，其固定連接在基板1頂面邊緣，擋板2的高度小於透鏡6的高度，且受力斜面9的最低水平高度與擋板2的高度相同。The baffle 2 is a heat-curing sealant or UV glue, which is fixedly connected to the edge of the top surface of the substrate 1. The height of the baffle 2 is less than the height of the lens 6, and the lowest horizontal height of the force-bearing inclined surface 9 is the same as the height of the baffle 2.
封裝膠層7，封裝膠層7採用環氧樹脂材質，且其顏色為不透光色彩，其填充於擋板2內圈，並形成四稜臺狀結構，封裝膠層7的側面形成若干受力斜面9，受力斜面9至引線4的最小間距為N±2mm。The packaging rubber layer 7 is made of epoxy resin material and is opaque in color. It fills the inner circle of the baffle 2 and forms a four-sided pyramid structure. The side surface of the packaging rubber layer 7 forms a plurality of force-bearing inclined surfaces 9, and the minimum distance between the force-bearing inclined surfaces 9 and the lead 4 is N±2mm.
且上述圖像感測器的封裝結構製備工藝，包括如下步驟， 在基板1底面焊接導電接腳8； 將晶片3黏接在基板1的頂面，並通過電烙鐵焊接引線4，完成晶片3與基板1耦接； 在基板1頂面邊緣膠黏為熱固化封膠或UV膠的擋板2； 在晶片3頂面膠黏為玻璃和/或聚醯亞胺和/或醯胺樹脂的支撐側板5，並將透鏡6黏接在支撐側板5頂面； 在擋板2頂面膠黏一圈擋框10，擋圈內壁與擋板2的內壁齊平，而擋圈的內壁上存在一處向內凹陷的凹陷處11； 灌膠，在擋框10以及擋板2內滴入環氧樹脂，直至環氧樹脂的液面位於擋框10的二分之一高度後停止； 在擋框10內蓋入塑形模15，塑形模15上的開口16對應透鏡6與支撐側板5的位置插入，擠壓環氧樹脂，並令多餘環氧樹脂從凹陷處11離開； 通過機械臂12帶動機械爪13位移至擋框10外側，使得機械爪13上的切割刀片14介於擋框10與擋板2之間進行切割； 切割刀片14切斷擋框10與擋板2，同時切斷多餘環氧樹脂，並通過機械爪13夾緊基板1； 分離擋框10、塑形模15以及多餘環氧樹脂後靜置，得到圖像感測器的封裝結構。 The packaging structure preparation process of the above-mentioned image sensor includes the following steps: Welding the conductive pin 8 on the bottom surface of the substrate 1; Bonding the chip 3 to the top surface of the substrate 1, and welding the lead 4 by an electric soldering iron to complete the coupling between the chip 3 and the substrate 1; Gluing the baffle 2 made of thermosetting sealant or UV glue on the edge of the top surface of the substrate 1; Gluing the supporting side plate 5 made of glass and/or polyimide and/or amide resin on the top surface of the chip 3, and bonding the lens 6 to the top surface of the supporting side plate 5; Glue a baffle frame 10 on the top of the baffle plate 2, the inner wall of the baffle ring is flush with the inner wall of the baffle plate 2, and there is an inwardly concave depression 11 on the inner wall of the baffle ring; Glue is poured, and epoxy resin is dripped into the baffle frame 10 and the baffle plate 2 until the liquid level of the epoxy resin is half the height of the baffle frame 10 and then stopped; Cover the baffle frame 10 with a molding mold 15, and insert the opening 16 on the molding mold 15 corresponding to the position of the lens 6 and the supporting side plate 5, squeeze the epoxy resin, and let the excess epoxy resin leave from the depression 11; The mechanical claw 13 is driven by the mechanical arm 12 to move to the outside of the frame 10, so that the cutting blade 14 on the mechanical claw 13 is between the frame 10 and the baffle 2 for cutting; The cutting blade 14 cuts the frame 10 and the baffle 2, and cuts off the excess epoxy resin at the same time, and clamps the substrate 1 through the mechanical claw 13; After separating the frame 10, the molding mold 15 and the excess epoxy resin, the packaging structure of the image sensor is obtained.
通過上述方式來獲取圖像感測器的封裝結構，使得整個工藝較為簡潔，同時可以獲取到具有受力斜面9的封裝膠層7，該封裝膠層7由於至引線4的最小間距為N±2mm，故而使得其平面與引線4保持相對平行的狀態，在圖像感測器的封裝結構頂面原本四條稜線受力時，也會從線接觸轉為面接觸，從而使得外界的作用力會受到分散，不會集中作用，也就使得封裝膠層7上的作用力，不會盡數作用在引線4上，避免引線4的兩個焊點出現脫落、斷裂的情況。By obtaining the packaging structure of the image sensor in the above manner, the entire process is relatively simple, and at the same time, a packaging adhesive layer 7 with a force-bearing inclined surface 9 can be obtained. Since the minimum distance between the packaging adhesive layer 7 and the lead 4 is N±2mm, the plane thereof is kept relatively parallel to the lead 4. When the original four edges on the top surface of the packaging structure of the image sensor are subjected to force, the line contact is changed to the surface contact, so that the external force is dispersed and not concentrated, and the force on the packaging adhesive layer 7 does not act on the lead 4 as much as possible, thereby preventing the two solder joints of the lead 4 from falling off or breaking.
並且由於封裝膠層7上設置了受力平面，從而使得擋板2的高度小於透鏡6的高度，且受力斜面9的最低水平高度與擋板2的高度相同，這樣一來，還能夠在原有的基礎上，進一步縮小圖像感測器的封裝結構的尺寸，使得其應用的機器可以做的更加小巧精緻。Furthermore, since a force-bearing plane is provided on the packaging rubber layer 7, the height of the baffle 2 is smaller than the height of the lens 6, and the lowest horizontal height of the force-bearing inclined surface 9 is the same as the height of the baffle 2. In this way, the size of the packaging structure of the image sensor can be further reduced on the original basis, so that the machine to which it is applied can be made more compact and sophisticated.
以上所述僅是本發明的優選實施方式，本發明的保護範圍並不僅局限於上述實施例，凡屬於本發明思路下的技術方案均屬於本發明的保護範圍。應當指出，對於本技術領域的具有通常知識者來說，在不脫離本發明原理前提下的若干改進和潤飾，這些改進和潤飾也應視為本發明的保護範圍。The above is only the preferred implementation of the present invention. The protection scope of the present invention is not limited to the above embodiments. All technical solutions under the idea of the present invention belong to the protection scope of the present invention. It should be pointed out that for those with ordinary knowledge in this technical field, some improvements and embellishments without departing from the principle of the present invention should also be regarded as the protection scope of the present invention.
1:基板 2:擋板 3:晶片 4:引線 5:支撐側板 6:透鏡 7:封裝膠層 8:導電接腳 9:受力斜面 10:擋框 11:凹陷處 12:機械臂 13:機械爪 14:切割刀片 15:塑形模 16:開口 1: Substrate 2: Baffle 3: Chip 4: Lead 5: Support side plate 6: Lens 7: Package glue layer 8: Conductive pins 9: Force-bearing inclined surface 10: Baffle 11: Depression 12: Robot arm 13: Robot claw 14: Cutting blade 15: Shaping mold 16: Opening
圖1為本發明的結構示意圖； 圖2為本發明的剖視圖； 圖3為圖2中A處的放大圖； 圖4為本發明生產過程中的結構示意圖； 圖5為圖4中B處的放大圖； 圖6為本發明生產過程中加工壁的結構示意圖； 圖7為圖6中C處的放大圖； 圖8為本發明中生產過程中塑形模的結構示意圖。 Figure 1 is a schematic diagram of the structure of the present invention; Figure 2 is a cross-sectional view of the present invention; Figure 3 is an enlarged view of point A in Figure 2; Figure 4 is a schematic diagram of the structure during the production process of the present invention; Figure 5 is an enlarged view of point B in Figure 4; Figure 6 is a schematic diagram of the structure of the processing wall during the production process of the present invention; Figure 7 is an enlarged view of point C in Figure 6; Figure 8 is a schematic diagram of the structure of the shaping mold during the production process of the present invention.
1:基板 1: Substrate
2:擋板 2: Baffle
3:晶片 3: Chip
4:引線 4: Lead wire
5:支撐側板 5: Support side panels
6:透鏡 6: Lens
7:封裝膠層 7: Packaging glue layer
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| CN202211105316.8A CN116259636A (en) | 2022-09-09 | 2022-09-09 | A packaging structure for an image sensor |
| CN2022111053168 | 2022-09-09 |
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| TW202412213A TW202412213A (en) | 2024-03-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110156187A1 (en) * | 2009-12-31 | 2011-06-30 | Kingpak Technology Inc. | Image sensor packaging structure with predetermined focal length |
| CN102403323A (en) * | 2010-09-16 | 2012-04-04 | 胜开科技股份有限公司 | Wafer-level image sensor assembly structure and manufacturing method thereof |
| TW201911491A (en) * | 2017-08-15 | 2019-03-16 | 勝麗國際股份有限公司 | Stack type sensor package structure |
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| JP3425089B2 (en) * | 1998-10-12 | 2003-07-07 | 松下電器産業株式会社 | Method for manufacturing resin-encapsulated semiconductor device |
| JP2005333034A (en) * | 2004-05-21 | 2005-12-02 | Matsushita Electric Ind Co Ltd | Semiconductor device, manufacturing method and mounting method thereof |
| JP2008060283A (en) * | 2006-08-31 | 2008-03-13 | Matsushita Electric Ind Co Ltd | Resin-sealed mold, semiconductor package and manufacturing method thereof |
| KR101579623B1 (en) * | 2008-11-28 | 2015-12-23 | 앰코 테크놀로지 코리아 주식회사 | Semiconductor package for image sensor and manufacturing method thereof |
| EP3267486B1 (en) * | 2016-07-06 | 2020-12-30 | Kingpak Technology Inc. | Sensor package structure |
| CN110021619A (en) * | 2019-05-17 | 2019-07-16 | 积高电子(无锡)有限公司 | Image sensor package structure and packaging method |
| KR102858755B1 (en) * | 2020-08-21 | 2025-09-11 | 엘지이노텍 주식회사 | Image sensor package and camera device comprising the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110156187A1 (en) * | 2009-12-31 | 2011-06-30 | Kingpak Technology Inc. | Image sensor packaging structure with predetermined focal length |
| CN102403323A (en) * | 2010-09-16 | 2012-04-04 | 胜开科技股份有限公司 | Wafer-level image sensor assembly structure and manufacturing method thereof |
| TW201911491A (en) * | 2017-08-15 | 2019-03-16 | 勝麗國際股份有限公司 | Stack type sensor package structure |
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