TWI851019B - Heat dissipation sheet structure and chip on film package structure - Google Patents
Heat dissipation sheet structure and chip on film package structure Download PDFInfo
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本揭露是有關於一種散熱片結構及包括散熱片結構的薄膜覆晶封裝結構。The present disclosure relates to a heat sink structure and a chip-on-film package structure including the heat sink structure.
近年來,尤其於電子領域,伴隨積體電路高密度化所產生之發熱成為較大問題,如何進行散熱成為緊迫的課題。目前的散熱結構的做法其中之一是採用散熱效果較傳統金屬箔來得好的粉末狀散熱材(例如石墨、陶瓷、氧化鋁等)來製作散熱貼片,具體來說是透過上下兩層黏著層壓合粉末狀散熱材而形成。然而,這樣的結構容易造成粉末狀散熱材與黏著層脫層或裂開,且在壓合時外觀容易產生皺褶,進而影響散熱效果。此外,為了要增加前述散熱貼片的結構強度,散熱片結構通常會進一步疊合金屬箔(例如鋁片等),但這會使得散熱貼片的整體厚度增加(例如:200微米(μm)以上),且粉末狀散熱材也容易從黏著層溢出造成汙染,進而導致產品散熱效果及良率下降。In recent years, especially in the field of electronics, the heat generated by the high density of integrated circuits has become a major problem, and how to dissipate heat has become an urgent issue. One of the current heat dissipation structures is to use powdered heat sinks (such as graphite, ceramics, aluminum oxide, etc.) that have better heat dissipation effects than traditional metal foils to make heat sinks. Specifically, the powdered heat sink is formed by pressing the upper and lower adhesive layers. However, such a structure easily causes the powdered heat sink to delaminate or crack with the adhesive layer, and the appearance is prone to wrinkles during pressing, which in turn affects the heat dissipation effect. In addition, in order to increase the structural strength of the heat sink, the heat sink structure is usually further stacked with metal foil (such as aluminum foil, etc.), but this will increase the overall thickness of the heat sink (for example: more than 200 microns (μm)), and the powdered heat sink is also easy to overflow from the adhesive layer to cause pollution, thereby resulting in a decrease in the heat dissipation effect and yield of the product.
本揭露提供一種散熱片結構,其具有輕薄平整的外型、優異的散熱效果與結構強度,因而可降低具有散熱片結構的薄膜覆晶封裝結構的整體厚度並且可提升薄膜覆晶封裝結構的散熱效果及結構強度。The present disclosure provides a heat sink structure having a light, thin and flat appearance, excellent heat dissipation effect and structural strength, thereby reducing the overall thickness of a film-on-chip package structure having the heat sink structure and improving the heat dissipation effect and structural strength of the film-on-chip package structure.
本揭露的一種散熱片結構包括導熱基座、導熱蓋體以及多個散熱粉末。導熱基座具有相對的第一表面與第二表面,且包括底板、連接底板的多個側壁以及位於第二表面的容置凹槽,其中底板與多個側壁共同定義出容置凹槽。導熱蓋體覆蓋且密封導熱基座的容置凹槽。多個散熱粉末設置於容置凹槽內。A heat sink structure disclosed herein includes a heat conductive base, a heat conductive cover, and a plurality of heat dissipation powders. The heat conductive base has a first surface and a second surface opposite to each other, and includes a bottom plate, a plurality of side walls connected to the bottom plate, and a receiving groove located on the second surface, wherein the bottom plate and the plurality of side walls together define the receiving groove. The heat conductive cover covers and seals the receiving groove of the heat conductive base. The plurality of heat dissipation powders are disposed in the receiving groove.
本揭露的一種薄膜覆晶封裝結構包括前述的散熱片結構、可撓性線路載板以及晶片。可撓性線路載板具有相對的上表面與下表面以及定義於上表面的晶片設置區。晶片配置於晶片設置區內並與可撓性線路載板電性連接。散熱片結構設置於可撓性線路載板的下表面並對應晶片設置區或設置於可撓性線路載板的上表面並位於晶片設置區之外。A thin film chip package structure disclosed in the present invention includes the aforementioned heat sink structure, a flexible circuit carrier and a chip. The flexible circuit carrier has an upper surface and a lower surface relative to each other and a chip setting area defined on the upper surface. The chip is arranged in the chip setting area and is electrically connected to the flexible circuit carrier. The heat sink structure is arranged on the lower surface of the flexible circuit carrier and corresponds to the chip setting area or is arranged on the upper surface of the flexible circuit carrier and is located outside the chip setting area.
基於上述,本揭露的散熱片結構將散熱粉末設置於導熱基座所定義出的容置凹槽內,並以導熱蓋體罩覆於其上而將散熱粉末密封於容置凹槽內。如此配置,散熱粉末可密封於導熱基座與導熱蓋體所定義出的密封空間內而不易溢出,因此,此散熱片結構可提供較佳的散熱效果及良率,也可避免散熱粉末溢出而導致薄膜覆晶封裝結構等電子元件被汙染或電性異常的情況發生。此外,本揭露的散熱片結構的導熱基座可採用金屬補強板製作而成,藉此,散熱片結構貼附於薄膜覆晶封裝結構時,不僅可提供散熱的功能,還可加強薄膜覆晶封裝結構的結構強度。並且,本揭露的散熱片結構可具有輕薄且平整的外型,以便於將其貼附於薄膜覆晶封裝結構上,以輔助薄膜覆晶封裝結構進行散熱。因此,本揭露的散熱片結構可有效提升薄膜覆晶封裝結構等電子元件的散熱效率。Based on the above, the heat sink structure disclosed in the present invention sets the heat dissipation powder in the receiving groove defined by the thermally conductive base, and covers it with a thermally conductive cover to seal the heat dissipation powder in the receiving groove. With such a configuration, the heat dissipation powder can be sealed in the sealed space defined by the thermally conductive base and the thermally conductive cover and is not easy to overflow. Therefore, this heat sink structure can provide a better heat dissipation effect and yield, and can also prevent the heat dissipation powder from overflowing and causing electronic components such as the film chip packaging structure to be contaminated or electrical abnormalities to occur. In addition, the thermally conductive base of the heat sink structure disclosed in the present invention can be made of a metal reinforcement plate, whereby, when the heat sink structure is attached to the film chip packaging structure, it can not only provide a heat dissipation function, but also enhance the structural strength of the film chip packaging structure. Furthermore, the heat sink structure disclosed in the present invention can have a thin and flat appearance, so that it can be attached to the chip-on-film packaging structure to assist the chip-on-film packaging structure in heat dissipation. Therefore, the heat sink structure disclosed in the present invention can effectively improve the heat dissipation efficiency of electronic components such as the chip-on-film packaging structure.
有關本揭露之前述及其他技術內容、特點與功效,在以下配合參考圖式之各實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:「上」、「下」、「前」、「後」、「左」、「右」等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明,而並非用來限制本揭露。並且,在下列各實施例中,相同或相似的元件將採用相同或相似的標號。The above-mentioned and other technical contents, features and effects of the present disclosure will be clearly presented in the detailed description of each embodiment with reference to the drawings below. The directional terms mentioned in the following embodiments, such as "up", "down", "front", "back", "left", "right", etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used for explanation, not for limiting the present disclosure. In addition, in the following embodiments, the same or similar components will adopt the same or similar labels.
圖1是依照本揭露的一實施例的一種散熱片結構的元件分解剖面示意圖。圖2是依照本揭露的一實施例的一種散熱片結構的剖面示意圖。請同時參照圖1及圖2,在一些實施例中,散熱片結構100包括導熱基座120、導熱蓋體110以及多個散熱粉末130,其中,導熱基座120具有彼此相對的第一表面S1與第二表面S2,並且,導熱基座120可包括底板121、多個側壁123以及容置凹槽C。在一實施例中,側壁123連接底板121,具體來說,側壁123可分別連接底板121的側邊,因此,側壁123的數量可分別對應的底板121的側邊數量。舉例來說,在本實施例中,底板121可為四邊形,而側壁123的數量則可對應為四個,以分別連接於底板121的四個側邊。底板121與多個側壁123共同定義出上述的容置凹槽C,且此容置凹槽C可位於導熱基座120的第二表面S2。容置凹槽C在第二表面S2上的形狀可以是四邊形、圓形、多邊形等,本發明對於容置凹槽C的形狀不加以限制。舉例來說,在本實施例中,容置凹槽C在第二表面S2上的形狀為四邊形。FIG. 1 is a schematic cross-sectional view of a heat sink structure according to an embodiment of the present disclosure. FIG. 2 is a schematic cross-sectional view of a heat sink structure according to an embodiment of the present disclosure. Referring to FIG. 1 and FIG. 2, in some embodiments, the
在一些實施例中,導熱蓋體110設置於導熱基座120上,以覆蓋並密封導熱基座120的容置凹槽C。具體而言,在本實施例中,導熱蓋體110可包括蓋板112以及連接蓋板112的多個側板114。在一實施例中,側板114可分別連接蓋板112的多個側邊,因此,側板114的數量可分別對應蓋板112的側邊數量,而蓋板112的側邊數量又可對應於導熱基座120的容置凹槽C的側邊數量。因此,在本實施例中,蓋板112可對應於容置凹槽C而為四邊形,且側板114的數量則可對應為四個,以分別連接於蓋板112的四個側邊。在本實施例中,側板114分別位於導熱基座120的容置凹槽C內並分別抵靠相應的側壁123。也就是說,導熱蓋體110是内嵌於容置凹槽C內,以覆蓋並密封導熱基座120的容置凹槽C。在一實施例中,導熱基座120與導熱蓋體110的材料包括銅、鋁等具有高導熱係數的金屬材料。導熱基座120可以採用在金屬補強板的一表面上形成凹槽的方式形成。藉此,散熱片結構100貼附於例如半導體封裝等電子元件時,不僅可提供散熱的功能,還可加強此電子元件的結構強度。此外,藉由此方式形成的散熱片結構100的厚度也可控制在100微米以下。In some embodiments, the thermally
在一些實施例中,散熱粉末130設置於容置凹槽C內並經由導熱蓋體110而密封於容置凹槽C內。在一些實施例中,散熱粉末130包括碳基材料、陶瓷或金屬及/或其任意組合等粉末狀材料。碳基材料可包括石墨、石墨烯、奈米碳等,而金屬可包括鋁、銅等。在本實施例中,散熱粉末130可包括石墨粉末、陶瓷粉末、氧化鋁粉末及/或其任意組合。如此配置,散熱粉末130可密封於導熱基座120與導熱蓋體110所定義出的容置空間內而不易溢出,因而可提升散熱片結構100的散熱效果及良率,也可避免散熱粉末130溢出而導致例如半導體封裝等電子元件被汙染或電性異常的情況發生。並且,本揭露的散熱片結構100可具有輕薄且平整的外型,以便於貼附於電子元件上。In some embodiments, the
在一些實施例中,散熱片結構100更可包括第一黏著層140,其可貼附於導熱基座120的第二表面S2以及導熱蓋體110的外表面116。如此,第一黏著層140既可同時貼附導熱基座120與導熱蓋體110以固定兩者之間的組裝關係,更可用於將散熱片結構100貼附於其他電子元件上。進一步而言,導熱蓋體110嵌入並卡合於導熱基座120的容置凹槽C內,使導熱基座120的第二表面S2與導熱蓋體110的外表面116為共平面。如此,第一黏著層140即可貼附於導熱基座120的第二表面S2與導熱蓋體110的外表面116所構成的共平面,以固定導熱基座120與導熱蓋體110之間的相對位置。In some embodiments, the
在一實施例中,散熱片結構100更可包括第二黏著層150,其可貼附於導熱基座120的第一表面S1,也就是說,第一黏著層140與第二黏著層150可分別貼附於散熱片結構100的相對兩表面(例如第二表面S2與第一表面S1),以使散熱片結構100的一側可經由第一黏著層140貼附於一裝置結構上,並使散熱片結構100的相對側可經由第二黏著層150而貼附於另一裝置結構上,因而可同時輔助兩個電子元件進行散熱。In one embodiment, the
圖2A是依照本揭露的另一實施例的一種散熱片結構的剖面示意圖。本實施例沿用圖2的實施例的元件標號與部分內容,其中採用相同或相近的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG2A is a cross-sectional schematic diagram of a heat sink structure according to another embodiment of the present disclosure. This embodiment uses the component numbers and some contents of the embodiment of FIG2 , wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiment, and will not be repeated here.
圖2A的散熱片結構100’與圖2的散熱片結構100的主要差異在於:導熱蓋體110’可僅包括蓋板112而不具有側板114,且蓋板112覆蓋容置凹槽C以將散熱粉末130密封於容置凹槽C内。在本實施例中,蓋板112的形狀可與容置凹槽C在第二表面S2上的輪廓共形(conformal),且蓋板112的側邊數量可對應於容置凹槽C的側邊數量。具體而言,在本實施例中,蓋板112嵌入並卡合於容置凹槽C,並使導熱基座120的第二表面S2與導熱蓋體110’的外表面116為共平面,且第一黏著層140貼附於第二表面S2與外表面116所構成的共平面。如此,第一黏著層140既可同時貼附導熱基座120的第二表面S2與導熱蓋體110’的外表面116以固定兩者之間的組裝關係,更可用於將散熱片結構100’貼附於其他電子元件上。The main difference between the heat sink structure 100' of FIG. 2A and the
圖3是依照本揭露的另一實施例的一種散熱片結構的剖面示意圖。圖4是圖3的散熱片結構的部分元件的上視示意圖。其中,圖4的上視圖省略繪示了導熱蓋體110與第一黏著層140,以求更清楚地呈現下方的導熱基座的結構。本實施例的散熱片結構100a沿用圖2的實施例的散熱片結構100的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG3 is a cross-sectional schematic diagram of a heat sink structure according to another embodiment of the present disclosure. FIG4 is a top view schematic diagram of some components of the heat sink structure of FIG3 . The top view of FIG4 omits the heat
請參照圖3及圖4,圖3的散熱片結構100a與圖2的散熱片結構100的主要差異在於:在本實施例中,導熱基座120更可包括至少一隔板122,其設置於導熱基座120所定義出的容置凹槽C內並連接底板121,以將此容置凹槽C分隔成多個子凹槽C1、C2、C3,並且,散熱粉末130可分別設置於多個子凹槽C1、C2、C3內。在一些實施例中,隔板122可由底板121往上延伸至與覆蓋於其上的導熱蓋體110的蓋板112抵接。在本實施例中,導熱基座120可包括兩個隔板122,以將導熱基座120所定義出的容置凹槽C分隔成第一子凹槽C1、第二子凹槽C2與第三子凹槽C3。散熱粉末130可包括設置於第一子凹槽C1內的多個第一散熱粉末132、設置於第二子凹槽C2內的多個第二散熱粉末134以及設置於第三子凹槽C3內的多個第三散熱粉末136,其中第一散熱粉末132的材料可不同於第二散熱粉末134及/或第三散熱粉末136的材料。當然,本實施例僅用以舉例說明,本揭露並不限制隔板122與子凹槽的數量以及其設置方式。本揭露對於第一散熱粉末132、第二散熱粉末134及第三散熱粉末136採用相同或不同材料也不加以限制。Please refer to FIG. 3 and FIG. 4 . The main difference between the
舉例而言,設置於第一子凹槽C1內的第一散熱粉末132可為石墨粉末,設置於第二子凹槽C2內的第二散熱粉末134可為陶瓷粉末,而設置於第三子凹槽C3內的第三散熱粉末136可為氧化鋁粉末,但本揭露並不限於此。子凹槽C1、C2、C3的配置及其內所置放的散熱粉末132、134、136的種類可依散熱片結構100a所貼附的電子元件的散熱需求改變。舉例來說,若電子元件於中央區域的散熱需求較大,則可在對應於電子元件的中央區域的子凹槽內置放具有導熱係數較高的散熱粉末(例如石墨粉末),並在對應於電子元件的其他區域的子凹槽內置放具有導熱係數較低的散熱粉末(例如氧化鋁粉末)。For example, the first
圖5與圖6是依照本揭露的不同實施例的散熱片結構的部分元件的上視示意圖。圖5與圖6的實施例沿用圖4的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG5 and FIG6 are schematic top views of some components of the heat sink structure according to different embodiments of the present disclosure. The embodiments of FIG5 and FIG6 use the component numbers and some contents of the embodiment of FIG4, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.
請先參照圖5,在本實施例中,多個子凹槽包括第一子凹槽C1以及第二子凹槽C2,且第一子凹槽C1的尺寸不同於第二子凹槽C2的尺寸。在本實施例中,導熱基座120可包括一個隔板122,以分隔出兩個尺寸不同的第一子凹槽C1以及第二子凹槽C2,其中,第一子凹槽C1的尺寸小於第二子凹槽C2的尺寸。在一實施例中,散熱粉末130可包括設置於第一子凹槽C1內的第一散熱粉末132以及設置於第二子凹槽C2內的第二散熱粉末134,且第一散熱粉末132的材料可不同於第二散熱粉末134的材料。Please refer to FIG. 5 . In this embodiment, the plurality of sub-grooves include a first sub-groove C1 and a second sub-groove C2, and the size of the first sub-groove C1 is different from the size of the second sub-groove C2. In this embodiment, the thermally
在一些實施例中,子凹槽C1、C2的尺寸大小及其內所置放的散熱粉末132、134的種類可依散熱片結構所貼附的電子元件的散熱需求改變。舉例來說,若電子元件於右側區域的散熱需求較大且面積較小,則可使對應於電子元件的右側區域的子凹槽(例如第一子凹槽C1)的尺寸小於左側區域的子凹槽(例如第二子凹槽C2)的尺寸,並於第一子凹槽C1內置放具有導熱係數較高的散熱粉末132(例如石墨粉末),且在第二子凹槽C2內置放具有導熱係數較低的散熱粉末134(例如氧化鋁粉末)。In some embodiments, the size of the sub-grooves C1 and C2 and the types of heat dissipation powders 132 and 134 placed therein can be changed according to the heat dissipation requirements of the electronic components to which the heat sink structure is attached. For example, if the heat dissipation requirements of the electronic components in the right area are larger and the area is smaller, the size of the sub-grooves corresponding to the right area of the electronic components (e.g., the first sub-grooves C1) can be smaller than the size of the sub-grooves in the left area (e.g., the second sub-grooves C2), and heat dissipation powders 132 with a higher thermal conductivity (e.g., graphite powder) are placed in the first sub-grooves C1, and heat dissipation powders 134 with a lower thermal conductivity (e.g., aluminum oxide powder) are placed in the second sub-grooves C2.
請參照圖6,在本實施例中,子凹槽可包括多個子凹槽C1、C2、C3、C4、C5、C6,其內可分別設置散熱粉末130、130a。舉例來說,子凹槽C1、C2、C3、C4、C5、C6的數量可為六個並彼此對稱設置,其內所設置的散熱粉末130、130a可至少包括兩種不同種類。也就是說,設置於子凹槽C1、C2、C3、C4、C5、C6內的散熱粉末130、130a可依實際產品的散熱需求而有的種類相同,有的種類不同。舉例來說,若電子元件於上側的中央區域的散熱需求較大,則可在對應於電子元件的上側的中央區域的子凹槽(例如子凹槽C2)內設置具有導熱係數較高的散熱粉末130a(例如石墨粉末),並在其餘的子凹槽(例如子凹槽C1、C3、C4、C5、C6)內置放具有導熱係數較低的散熱粉末130(例如氧化鋁粉末)。Please refer to FIG. 6 . In this embodiment, the sub-grooves may include a plurality of sub-grooves C1, C2, C3, C4, C5, and C6, in which heat dissipation powders 130 and 130a may be disposed respectively. For example, the number of sub-grooves C1, C2, C3, C4, C5, and C6 may be six and symmetrically disposed, and the heat dissipation powders 130 and 130a disposed therein may include at least two different types. In other words, the heat dissipation powders 130 and 130a disposed in the sub-grooves C1, C2, C3, C4, C5, and C6 may be of the same type or of different types depending on the heat dissipation requirements of the actual product. For example, if the electronic component has a greater heat dissipation requirement in the central area of the upper side, a
圖7是依照本揭露的一實施例的一種薄膜覆晶封裝結構的底視示意圖。圖8是圖7的薄膜覆晶封裝結構的剖面示意圖。本實施例的薄膜覆晶封裝結構中的散熱片結構沿用圖2的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG. 7 is a bottom view schematic diagram of a thin film chip package structure according to an embodiment of the present disclosure. FIG. 8 is a cross-sectional schematic diagram of the thin film chip package structure of FIG. 7. The heat sink structure in the thin film chip package structure of this embodiment uses the component numbers and part of the content of the embodiment of FIG. 2, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical content is omitted. The description of the omitted part can be referred to the aforementioned embodiment, and will not be repeated here.
前述的散熱片結構可貼附於其他電子元件上以輔助其進行散熱。本實施例僅用以舉例說明散熱片結構的其中一種應用,但本揭露並不限制散熱片結構的應用範圍。請同時參照圖7及圖8,散熱片結構100可應用於如圖7及圖8所示的薄膜覆晶封裝結構10。在本實施例中,薄膜覆晶封裝結構10可包括散熱片結構100、可撓性線路載板210以及晶片220。在本實施例中,可撓性線路載板210具有相對的上表面210a與下表面210b以及定義於上表面210a的晶片設置區R1,晶片220配置於晶片設置區R1內,並與可撓性線路載板210電性連接。在本實施例中,散熱片結構100可設置於可撓性線路載板210的下表面210b,並對應晶片設置區R1。The aforementioned heat sink structure can be attached to other electronic components to assist them in heat dissipation. This embodiment is only used to illustrate one application of the heat sink structure, but the present disclosure does not limit the scope of application of the heat sink structure. Please refer to Figures 7 and 8 at the same time. The
在一些實施例中,可撓性線路載板210可包括可撓性基底212、圖案化線路層214以及防焊層216。圖案化線路層214設置在可撓性基底212的上表面。防焊層216部分地覆蓋圖案化線路層214,並至少暴露出晶片設置區R1。晶片220設置在晶片設置區R1內並經由接合圖案化線路層214而電性連接可撓性線路載板210。在本實施例中,圖案化線路層214局部位於晶片設置區R1內,並且防焊層216暴露出位於晶片設置區R1內的圖案化線路層214。如圖8中所示,晶片220可例如以覆晶的方式接合於位於晶片設置區R1內的圖案化線路層214。更詳細地說,可撓性線路載板210的上表面210a可以是其任一構件(包括可撓性基底212、圖案化線路層214及防焊層216)的裸露表面。In some embodiments, the
在一實施例中,散熱片結構100可沿用前述實施例所述的各種散熱片結構,並可經由第一黏著層140而貼附於可撓性線路載板210的下表面210b。在本實施例中,散熱片結構100的貼附位置可對應於晶片設置區R1,換句話說,從如圖7所示的底視圖的方向看去,散熱片結構100局部重疊於晶片220(晶片設置區R1)。如此,散熱片結構100便可對晶片220進行散熱。此外,薄膜覆晶封裝結構10更可包括填充在晶片220與可撓性線路載板210之間的底部填充膠(underfill)230。In one embodiment, the
圖9是依照本揭露的另一實施例的一種薄膜覆晶封裝結構的剖面示意圖。本實施例的薄膜覆晶封裝結構10a沿用前述實施例的薄膜覆晶封裝結構10的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG9 is a cross-sectional schematic diagram of a thin film chip package structure according to another embodiment of the present disclosure. The thin film
請參照圖9,在本實施例中,散熱片結構100可設置於可撓性線路載板210的上表面210a,並位於晶片設置區R1之外。具體而言,散熱片結構100可設置於晶片220所設置的上表面210a,也就是說,散熱片結構100與晶片220可設置於可撓性線路載板210的同一側,並且不與晶片設置區R1重疊,而是設置於晶片設置區R1的外圍區域。在本實施例中,散熱片結構100是以第一黏著層140貼附於防焊層230上,以輔助薄膜覆晶封裝結構10a進行散熱。當然,本實施例僅用以舉例說明,在其他實施例中,散熱片結構100也可同時設置於可撓性線路載板210上表面210a以及下表面210b,更可設置於圖7至圖9所示的位置以外的其他位置。Please refer to FIG. 9 . In this embodiment, the
綜上所述,本揭露的散熱片結構將散熱粉末設置於導熱基座所定義出的容置凹槽內,並以導熱蓋體罩覆於其上而將散熱粉末密封於容置凹槽內。如此配置,散熱粉末可密封於導熱基座與導熱蓋體所定義出的密封空間內而不易溢出,因此,此散熱片結構可提供較佳的散熱效果及良率,也可避免散熱粉末溢出而導致薄膜覆晶封裝結構等電子元件被汙染或電性異常的情況發生。此外,本揭露的散熱片結構的導熱基座可採用金屬補強板製作而成,藉此,散熱片結構貼附於薄膜覆晶封裝結構時,不僅可提供散熱的功能,還可加強薄膜覆晶封裝結構的結構強度。並且,本揭露的散熱片結構可具有輕薄且平整的外型,以便於將其貼附於薄膜覆晶封裝結構上,以輔助薄膜覆晶封裝結構進行散熱。因此,本揭露的散熱片結構可有效提升薄膜覆晶封裝結構等電子元件的散熱效率。In summary, the heat sink structure disclosed herein places heat dissipation powder in a receiving groove defined by a thermally conductive base, and covers the heat conductive cover thereon to seal the heat dissipation powder in the receiving groove. With such a configuration, the heat dissipation powder can be sealed in a sealed space defined by the thermally conductive base and the thermally conductive cover and is not easy to overflow. Therefore, this heat sink structure can provide a better heat dissipation effect and yield, and can also prevent the heat dissipation powder from overflowing and causing electronic components such as a film flip chip package structure to be contaminated or electrical abnormalities to occur. In addition, the thermally conductive base of the heat sink structure disclosed herein can be made of a metal reinforcement plate, whereby when the heat sink structure is attached to the film flip chip package structure, it can not only provide a heat dissipation function, but also enhance the structural strength of the film flip chip package structure. Furthermore, the heat sink structure disclosed in the present invention can have a thin and flat appearance, so that it can be attached to the chip-on-film packaging structure to assist the chip-on-film packaging structure in heat dissipation. Therefore, the heat sink structure disclosed in the present invention can effectively improve the heat dissipation efficiency of electronic components such as the chip-on-film packaging structure.
10、10a:薄膜覆晶封裝結構
100、100'、100a:散熱片結構
110、110':導熱蓋體
112:蓋板
114:側板
116:外表面
120:導熱基座
121:底板
122:隔板
123:側壁
130、130a、132、134、136:散熱粉末
132:第一散熱粉末
134:第二散熱粉末
136:第三散熱粉末
140:第一黏著層
150:第二黏著層
210:可撓性線路載板
210a:上表面
210b:下表面
212:可撓性基底
214:圖案化線路層
216:防焊層
220:晶片
230:底部填充膠
C:容置凹槽
C1、C2、C3、C4、C5、C6:子凹槽
C1:第一子凹槽
C2:第二子凹槽
C3:第三子凹槽
R1:晶片設置區
S1:第一表面
S2:第二表面
10, 10a: film
圖1是依照本揭露的一實施例的一種散熱片結構的元件分解剖面示意圖。 圖2是依照本揭露的一實施例的一種散熱片結構的剖面示意圖。 圖2A是依照本揭露的另一實施例的一種散熱片結構的剖面示意圖。 圖3是依照本揭露的另一實施例的一種散熱片結構的剖面示意圖。 圖4是圖3的散熱片結構的部分元件的上視示意圖。 圖5至圖6是依照本揭露的不同實施例的散熱片結構的部分元件的上視示意圖。 圖7是依照本揭露的一實施例的一種薄膜覆晶封裝結構的底視示意圖。 圖8是圖7的薄膜覆晶封裝結構的剖面示意圖。 圖9是依照本揭露的另一實施例的一種薄膜覆晶封裝結構的剖面示意圖。 FIG. 1 is a schematic diagram of a heat sink structure according to an embodiment of the present disclosure. FIG. 2 is a schematic diagram of a cross-sectional view of a heat sink structure according to an embodiment of the present disclosure. FIG. 2A is a schematic diagram of a cross-sectional view of a heat sink structure according to another embodiment of the present disclosure. FIG. 3 is a schematic diagram of a cross-sectional view of a heat sink structure according to another embodiment of the present disclosure. FIG. 4 is a schematic diagram of a top view of some components of the heat sink structure of FIG. 3. FIG. 5 to FIG. 6 are schematic diagrams of a top view of some components of the heat sink structure according to different embodiments of the present disclosure. FIG. 7 is a schematic diagram of a bottom view of a thin film chip-on-chip packaging structure according to an embodiment of the present disclosure. FIG. 8 is a schematic diagram of a cross-sectional view of the thin film chip-on-chip packaging structure of FIG. 7. FIG. 9 is a schematic diagram of a cross-sectional view of a thin film chip-on-chip packaging structure according to another embodiment of the present disclosure.
10:薄膜覆晶封裝結構 10: Thin film chip packaging structure
100:散熱片結構 100: Heat sink structure
110:導熱蓋體 110: Thermal conductive cover
120:導熱基座 120: Thermal conductive base
130:散熱粉末 130: Heat dissipation powder
140:第一黏著層 140: First adhesive layer
210:可撓性線路載板 210: Flexible circuit board
210a:上表面 210a: Upper surface
210b:下表面 210b: Lower surface
212:可撓性基底 212: Flexible base
214:圖案化線路層 214: Patterned circuit layer
216:防焊層 216: Solder mask
220:晶片 220: Chip
230:底部填充膠 230: Bottom filling glue
C:容置凹槽 C: Accommodating groove
R1:晶片設置區 R1: Chip setting area
Claims (9)
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| CN202310463132.7A CN118486661A (en) | 2023-02-10 | 2023-04-26 | Radiating fin structure and thin film flip packaging structure |
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|---|---|---|---|---|
| TW201637167A (en) * | 2014-12-17 | 2016-10-16 | 微軟技術授權有限責任公司 | Thermal management of electronic components |
| TW201739015A (en) * | 2016-04-05 | 2017-11-01 | Towa股份有限公司 | Resin packaging device and resin packaging method |
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|---|---|---|---|---|
| TW201637167A (en) * | 2014-12-17 | 2016-10-16 | 微軟技術授權有限責任公司 | Thermal management of electronic components |
| TW201739015A (en) * | 2016-04-05 | 2017-11-01 | Towa股份有限公司 | Resin packaging device and resin packaging method |
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