TWI850407B - System and method for controlled deposition of a fluid on a substrate, use of the system and product obtained by the method - Google Patents
System and method for controlled deposition of a fluid on a substrate, use of the system and product obtained by the method Download PDFInfo
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Abstract
Description
本發明涉及用於以獲得奈米層之方式沉積液體的系統。 The invention relates to a system for depositing a liquid in such a way as to obtain a nanolayer.
本發明更精確地關注用於基板上液體之經控制沉積的系統、在基板上沉積液體之方法、該系統用於增材製造之用途,及藉由該方法獲得之產物。 The present invention is more specifically concerned with a system for controlled deposition of a liquid on a substrate, a method for depositing a liquid on a substrate, the use of the system for additive manufacturing, and the products obtained by the method.
增材製造為涵蓋基於逐層沉積之不同技術的通用術語。可區分兩種主要的增材製造技術:直接印刷技術及所謂的間接技術。前者在於將所需材料直接沉積至基板上。間接技術使用諸如雷射或UV燈之能量源對所需材料之浴槽起作用。 Additive manufacturing is a general term that covers different technologies based on layer-by-layer deposition. Two main types of additive manufacturing techniques can be distinguished: direct printing techniques and so-called indirect techniques. The former consist in depositing the desired material directly onto a substrate. Indirect techniques use an energy source such as a laser or UV lamp to act on a bath of the desired material.
增材製造正強勁增長,此極大地改變了各行業設計其製造製程的方式。現在存在複數種增材製造技術,該等技術使得能夠以一毫米與一米之間的大小範圍獲得物體。已努力降為一毫米以下。 Additive manufacturing is growing strongly, which is significantly changing the way industries design their manufacturing processes. There are now several additive manufacturing technologies that make it possible to obtain objects in a size range between one millimeter and one meter. Efforts are being made to go below one millimeter.
熟習此項技術者已知的用於沉積液體之間接印刷技術為雙光子聚合,其使得能夠使用雷射在光可聚合樹脂上印刷物體。彼樹脂必須對雷射之波長透明,以便能夠進行化學反應並產生聚合作用。此技術之解析度可達到雷射波長之一半,亦即大約一百奈米。此技術之優勢為能夠尤 其歸功於雷射移動之精度而高精度地製造複雜的物體。然而,一方面,由於複雜的裝置,且還由於所用材料之限制--材料必須為光可聚合的,該技術仍然受到限制。 An indirect printing technique for depositing liquids known to those skilled in the art is two-photon polymerization, which enables the printing of objects on photopolymerizable resins using lasers. The resin must be transparent to the wavelength of the laser in order to be able to undergo a chemical reaction and produce polymerization. The resolution of this technique can reach half the wavelength of the laser, that is, about one hundred nanometers. The advantage of this technique is the ability to produce complex objects with high precision, especially thanks to the precision of the laser movement. However, the technology is still limited, on the one hand, by the complexity of the device, but also by the limitations of the materials used - the materials must be photopolymerizable.
另一間接印刷技術為電子束輔助生長技術(FEBID),該技術使得能夠藉由用電子轟擊所需材料之前驅體氣體來沉積材料,以便使材料沉積在基板上。例如,此為可安裝在掃描電子顯微鏡中的技術。藉由將電子束聚焦在極小大小(小於1nm)的點上,FEBID可獲得大約一奈米之解析度。即使此技術之特徵在於不均等之潛在解析度並具有藉由原位表徵產生複雜物體的可能性,但目前不能完全實現沉積精度。實際上,電子束與揮發性前驅體之間的相互作用難以控制,從而產生大小通常大於焦點準確度之沉積物。又,必須找到適合於裝置使用條件之前驅體以使其能夠沉積,其結果為大大降低了製造材料的可能性。 Another indirect printing technique is the electron beam assisted growth technique (FEBID), which enables the deposition of materials by bombarding a precursor gas of the desired material with electrons so that the material is deposited on a substrate. This is a technique that can be mounted in a scanning electron microscope, for example. By focusing the electron beam on a point of very small size (less than 1 nm), FEBID can achieve a resolution of about one nanometer. Even though this technique is characterized by an uneven potential resolution and the possibility of producing complex objects by in situ characterization, the deposition accuracy is currently not fully achieved. In practice, the interaction between the electron beam and the volatile precursors is difficult to control, resulting in deposits whose size is generally greater than the accuracy of the focus. Furthermore, it is necessary to find a pre-driver that is suitable for the conditions of use of the device so that it can be deposited, which results in a significant reduction in the possibility of manufacturing materials.
近年來,使用局部探針點(AFM或STM)的技術使得能夠實現接近一百奈米之解析度,如例如專利參考文獻WO 2017/106199及US 2017/0259498中所指出。 In recent years, techniques using local probe points (AFM or STM) have made it possible to achieve resolutions approaching one hundred nanometers, as indicated in patent references WO 2017/106199 and US 2017/0259498, for example.
此等上述技術皆為直接印刷技術,其使用移動之精度及局部探針技術的空間解析度來將液體材料沉積在各種基板上。此等技術使得能夠用多種溶劑來沉積極不同的材料,該等溶劑為:- 不同類型之聚合物;- 生物分子(肽、ADN、酶……);- 各種膠體。 All of these above mentioned technologies are direct printing technologies that use the precision of movement and the spatial resolution of local probe technology to deposit liquid materials on various substrates. These technologies allow the deposition of very different materials with a wide range of solvents: - different types of polymers; - biomolecules (peptides, ADN, enzymes, ...); - various colloids.
在一種情況下,如羽毛筆般使用AFM點。在每次沉積之前將其浸入沉積材料之液滴中。在另一情況下,在沉積之前,使該點裝載有 少量所需液體材料。然而,即使解析度極高,該兩種方法仍具有一主要缺點,此係由於在缺少具有充分容積之儲集器的情況下不可能進行連續印刷。又,因為沒有參數能夠控制自該點穿過或穿過該點之材料的流動,所以所獲得沉積物之精度不足。 In one case, the AFM point is used like a feather pen. It is dipped into a drop of the deposited material before each deposition. In the other case, the point is loaded with a small amount of the desired liquid material before deposition. However, both methods have a major disadvantage, even with very high resolution, since continuous printing is not possible in the absence of a reservoir with sufficient volume. Also, the precision of the deposits obtained is insufficient, since there are no parameters that can control the flow of material from or through the point.
因此,需要由小於100nm之厚度界定,能夠沉積多種材料,具有實現沉積控制之可調整參數,及充分大的儲集器以不間斷地製造一或多個物體之增材製造特徵層。 Therefore, there is a need for additively manufactured feature layers defined by thicknesses less than 100 nm, capable of depositing multiple materials, with adjustable parameters to achieve deposition control, and sufficiently large reservoirs to uninterruptedly fabricate one or more objects.
為解決前述缺點或更多前述缺點,根據本發明,一種用於基板上之液體的經控制沉積之系統包含:- 奈米噴射器,其包含:■儲集器,其用於儲存該液體,■不可變形突起,其具有用於自該儲集器提取該液體之噴射孔口,- 機械諧振器,其固定至該奈米噴射器,該機械諧振器適於偵測該突起與該基板之間的接觸,- 該機械諧振器之控制構件,該控制構件連接至:- 該機械諧振器之激勵構件,其適於使該機械諧振器以振盪頻率(fi)振盪,使得該突起在該突起接觸該基板之低位置與該突起並不接觸該基板之高位置之間振盪,該控制構件連接至- 偵測器構件,其適於偵測該機械諧振器之該振盪,且該控制構件連接至- 調節器構件,其適於藉由控制該機械諧振器之該振盪來調整該突起與該基板之間的該接觸,該調節器構件連接至用於調節的第一移位構件, 該第一移位構件至少適於將該奈米噴射器之該基板沿著軸線z朝向彼此或遠離彼此移動。 To solve the above disadvantages or more of the above disadvantages, according to the present invention, a system for controlled deposition of a liquid on a substrate comprises: - a nano-injector, which comprises: ■ a reservoir for storing the liquid, ■ a non-deformable protrusion having an ejection orifice for extracting the liquid from the reservoir, - a mechanical resonator fixed to the nano-injector, the mechanical resonator being suitable for detecting contact between the protrusion and the substrate, - a control member of the mechanical resonator, the control member being connected to: - The excitation member of the mechanical resonator is suitable for causing the mechanical resonator to oscillate at an oscillation frequency (fi) so that the protrusion oscillates between a low position where the protrusion contacts the substrate and a high position where the protrusion does not contact the substrate, the control member is connected to a detector member suitable for detecting the oscillation of the mechanical resonator, and the control member is connected to a regulator member suitable for adjusting the contact between the protrusion and the substrate by controlling the oscillation of the mechanical resonator, the regulator member is connected to a first displacement member for adjustment, The first displacement member is at least suitable for moving the substrate of the nanojet toward or away from each other along the axis z.
在本發明之上下文中,液體意指能夠在大於其臨限應力之應力值下流動的液體或凝膠,液體能夠或不能夠包含懸浮液中的物種。例如,可使用水、鹽水溶液、植物油、聚矽氧油、光學微影樹脂(SU8等)、離子液體、DNA-RNA鏈、諸如金及銀之貴金屬的奈米粒子(膠體或其他)、諸如膠原蛋白、多糖、蛋白質之不同生物材料、諸如氧化鋯、氧化鋁、氫氧化鋁、二氧化鈦之陶瓷材料作為液體,條件為該等粒子之大小允許液體穿過奈米噴射器之噴射孔口。例如,噴射孔口可為待沉積液體中所包含之粒子的直徑之7至10倍。 In the context of the present invention, liquid means a liquid or gel that can flow under a stress value greater than its critical stress, and the liquid can or cannot contain the species in the suspension. For example, water, saline solution, vegetable oil, silicone oil, photolithography resin (SU8, etc.), ionic liquid, DNA-RNA chain, nanoparticles (colloid or other) of precious metals such as gold and silver, various biomaterials such as collagen, polysaccharides, proteins, ceramic materials such as zirconia, aluminum oxide, aluminum hydroxide, titanium dioxide can be used as liquid, provided that the size of the particles allows the liquid to pass through the ejection orifice of the nanoinjector. For example, the jet orifice may be 7 to 10 times the diameter of the particles contained in the liquid to be deposited.
例如,懸浮液中之物種可為膠狀物種、成溶液之聚合物物種等。 For example, the species in the suspension can be colloidal species, polymer species in solution, etc.
在本發明之上下文中,基板意指可平坦、經結構化或具有曲率半徑之支撐件。 In the context of the present invention, a substrate refers to a support that can be flat, structured or have a radius of curvature.
例如,藉助於經結構化支撐件,可存在具有正方形形狀、半球形形狀、彎曲形狀、鋸齒形狀、尖頭形狀等之支撐件。 For example, with the structured support members, there may be support members having a square shape, a hemispherical shape, a curved shape, a sawtooth shape, a pointed shape, etc.
在本發明之上下文中,奈米噴射器意指包含具有小於1μm之直徑的噴射孔口之噴射器。 In the context of the present invention, a nanoinjector means an injector comprising an injection orifice having a diameter less than 1 μm.
在本發明之上下文中,噴射孔口意指穿過其中噴射來自奈米噴射器之液體,以此後將液體沉積在基板上的孔口,彼孔口之內徑及外徑適於進行希望獲得之沉積。 In the context of the present invention, an ejection orifice means an orifice through which a liquid from a nano-injector is ejected for subsequent deposition on a substrate, the inner and outer diameters of the orifice being suitable for the desired deposition.
應注意,除了噴射孔口之內徑之外,外徑亦影響沉積。實際上,在突起接觸基板時,噴射孔口之外徑影響形成於突起與基板之間的 彎液面。噴射孔口之內徑與外徑之間的比率較佳介於0.8與1之間,包括0.8及1。若在突起,特定而言位於噴射孔口之內徑與外徑之間的壁與基板之間發生接觸時形成了彎液面,則能保證液體在基板上之沉積。此外,在噴射孔口之內徑與外徑之間的比率介於0.8與1之間,包括0.8及1之情況下,彎液面較穩定,從而能保證在突起之低位置與高位置之間的沉積。若噴射孔口之內徑與外徑之間的比率接近1,亦即若位於噴射孔口之內徑與外徑之間的壁具有最小可能厚度,則有利於沉積及穩定性。 It should be noted that in addition to the inner diameter of the ejection orifice, the outer diameter also affects the deposition. In fact, the outer diameter of the ejection orifice affects the curved liquid surface formed between the protrusion and the substrate when the protrusion contacts the substrate. The ratio between the inner diameter and the outer diameter of the ejection orifice is preferably between 0.8 and 1, inclusive. If a curved liquid surface is formed when the protrusion, in particular the wall located between the inner diameter and the outer diameter of the ejection orifice, contacts the substrate, the deposition of the liquid on the substrate can be guaranteed. In addition, when the ratio between the inner diameter and the outer diameter of the ejection orifice is between 0.8 and 1, inclusive, the curved liquid surface is more stable, thereby ensuring deposition between the low and high positions of the protrusion. If the ratio between the inner diameter and the outer diameter of the ejection orifice is close to 1, that is, if the wall between the inner diameter and the outer diameter of the ejection orifice has the minimum possible thickness, it is beneficial to deposition and stability.
應注意,設計涵蓋具有可變大小之噴射孔口。又,噴射孔口可具有任何形狀之截面,例如正方形、矩形、卵形、圓形等。例如,突起及奈米噴射器可為整體式,使得突起接著可形成奈米噴射器之一體式部分,且因此與儲集器成整體式並具有例如錐形形狀。在此情況下,可存在末端處具有錐形形狀之奈米毛細管,希望經由該奈米毛細管來經由噴射孔口沉積液體。應注意,形狀無需為錐形且可具有具預界定形狀之噴射孔口,該孔口例如具有可隨與其設計相關之參數而變地調整之所需噴射孔口直徑。 It should be noted that the design encompasses ejection orifices with variable sizes. Also, the ejection orifice may have a cross-section of any shape, such as square, rectangular, oval, circular, etc. For example, the protrusion and the nano-injector may be integral, such that the protrusion may then form an integral part of the nano-injector and thus be integral with the reservoir and have, for example, a conical shape. In this case, there may be a nano-capillary having a conical shape at the end, through which it is desired to deposit the liquid through the ejection orifice. It should be noted that the shape need not be conical and it is possible to have an ejection orifice with a predefined shape, for example with a desired ejection orifice diameter that can be adjusted as a function of parameters related to its design.
應注意,儲集器可具有縱向形狀,例如圓柱形形狀,該儲集器之末端中之每一者處具有開口:直接或間接地連接至突起之第一開口及有可能穿過其中饋送儲集器之第二開口。 It should be noted that the reservoir may have a longitudinal shape, for example a cylindrical shape, with an opening at each of its ends: a first opening directly or indirectly connected to the protrusion and a second opening through which it is possible to feed the reservoir.
此外,應注意,奈米噴射器之儲集器及突起未必為整體式,且可經拆離或拆卸,使得可互換奈米噴射器之突起或儲集器。亦應注意,機械諧振器、控制構件、激勵構件、偵測器構件及調節器構件各自可個別地互換。 Furthermore, it should be noted that the reservoir and protrusion of the nano-injector are not necessarily integral and can be disassembled or disassembled so that the protrusion or reservoir of the nano-injector can be interchanged. It should also be noted that the mechanical resonator, control component, excitation component, detector component and regulator component can each be interchanged individually.
此外,突起可較佳地經功能化。 Furthermore, the protrusions can be preferably functionalized.
在本發明之上下文中,經功能化突起意指具有如下噴射孔口之突起,該噴射孔口之取決於突起之幾何形狀的初始幾何形狀藉由在突起中添加元件而經修改。因此有可能藉由在突起中添加元件而以某種方式調整突起之噴射孔口的內徑及/或外徑,使得能夠隨所需應用而變地修改噴射孔口之幾何形狀,功能化係在系統操作開始之前進行。例如,可藉由將奈米管插入突起中而獲得不同經功能化突起,該奈米管之一端以構成噴射孔口之方式在突起之表面處突出,該奈米管使用例如膠黏劑固定至突起。奈米管可具有不同直徑且由碳、氮化硼、二硫化鉬、矽製成。例如,奈米管可具有介於1μm與2μm之間,包括1μm及2μm的長度、介於60nm與200nm之間,包括60nm及200nm的外徑、介於5與50nm之間,包括5及50nm之內徑。經功能化突起之另一實例可為覆蓋有諸如金之貴重材料以保護液體免受例如UV光線影響之突起。 In the context of the present invention, a functionalized protrusion means a protrusion having an ejection orifice whose initial geometry, which depends on the geometry of the protrusion, is modified by adding elements to the protrusion. It is thus possible to adjust the inner and/or outer diameter of the ejection orifice of the protrusion in a certain way by adding elements to the protrusion, so that the geometry of the ejection orifice can be modified as desired, the functionalization being performed before the start of system operation. For example, different functionalized protrusions can be obtained by inserting nanotubes into the protrusion, one end of the nanotube protruding at the surface of the protrusion in such a way as to constitute an ejection orifice, the nanotube being fixed to the protrusion using, for example, an adhesive. The nanotubes can have different diameters and be made of carbon, boron nitride, molybdenum disulfide, silicon. For example, the nanotubes may have a length between 1 μm and 2 μm, inclusive, an outer diameter between 60 nm and 200 nm, inclusive, and an inner diameter between 5 and 50 nm, inclusive. Another example of a functionalized protrusion may be a protrusion covered with a precious material such as gold to protect the liquid from, for example, UV light.
噴射孔口可較佳地具有介於5與300nm之間的內徑。 The ejection orifice may preferably have an inner diameter between 5 and 300 nm.
在本發明之上下文中,不可變形突起意指在沉積期間之系統使用條件下具有穩定尺寸之突起。 In the context of the present invention, a non-deformable protrusion is understood to mean a protrusion that has stable dimensions under the conditions of use of the system during deposition.
在本發明之上下文中,固定至該奈米噴射器之機械諧振器意指接觸奈米噴射器,使得機械諧振器之振盪被傳輸至奈米噴射器之機械諧振器。 In the context of the present invention, a mechanical resonator fixed to the nanojet means a mechanical resonator that contacts the nanojet so that the oscillation of the mechanical resonator is transmitted to the nanojet.
在本發明之上下文中,控制構件意指一方面適於量測機械諧振器之振盪與由激勵構件傳輸至機械諧振器之設定點振盪之間的振盪差,且另一方面適於量測由突起與基板之間的接觸引起之振盪變化的構件。 In the context of the present invention, a control member means a member adapted to measure, on the one hand, the difference in oscillation between the oscillation of the mechanical resonator and the set point oscillation transmitted to the mechanical resonator by the excitation member, and, on the other hand, to measure the change in oscillation caused by the contact between the protrusion and the substrate.
例如,可存在作為控制構件之示波器,該示波器以改良伺 服控制功能之方式包含或不包含比例校正器(通常被稱為P校正器)、積分比例校正器(通常被稱為PI校正器)或比例積分微分校正器(通常被稱為PID校正器),使得機械諧振器根據設定點振盪而振盪。 For example, there may be an oscilloscope as a control component, which may or may not include a proportional corrector (commonly referred to as a P corrector), an integral proportional corrector (commonly referred to as a PI corrector) or a proportional integral differential corrector (commonly referred to as a PID corrector) in a manner that improves the servo control function, causing the mechanical resonator to oscillate according to the set point oscillation.
例如,可存在作為激勵構件之壓電、磁性激勵器或另外存在聲學激勵器,諸如擴音器。 For example, there may be piezoelectric or magnetic actuators as excitation components or there may also be acoustic actuators, such as loudspeakers.
例如,可存在作為偵測器構件之裝置,該裝置包含諸如加速計、光纖或另外包含雷射之機電微系統。 For example, there may be devices as detector components which include, for example, accelerometers, optical fibers or electromechanical microsystems which also include lasers.
偵測器構件可較佳地具有小於或等於105N/m,且為構成奈米噴射器之材料的函數之剛度。 The detector component may preferably have a stiffness less than or equal to 10 5 N/m, which is a function of the material from which the nanojet is constructed.
構成奈米噴射器之材料必須對待沉積液體具有抗性。例如,若希望在包含砷化鎵、二氧化矽、氧化鋁、氧化鋯或氮化硼之基板上沉積包含諸如鹽酸、硫酸、氫氟酸、硝酸或磷酸之強酸的液體,則奈米噴射器可由諸如高密度聚乙烯、聚丙烯、聚氯乙烯、聚偏二氟乙烯或另外聚醚酮之塑膠材料組成。 The material that makes up the nano-injector must be resistant to the liquid to be deposited. For example, if it is desired to deposit a liquid containing a strong acid such as hydrochloric acid, sulfuric acid, hydrofluoric acid, nitric acid, or phosphoric acid on a substrate containing gallium arsenide, silicon dioxide, aluminum oxide, zirconium oxide, or boron nitride, the nano-injector may be composed of a plastic material such as high-density polyethylene, polypropylene, polyvinyl chloride, polyvinylidene fluoride, or another polyetherketone.
在本發明之上下文中,適於控制突起與基板之間的接觸之調節器構件意指適於在彼等兩元件之間發生接觸時控制基板抵靠突起之相互作用力之構件。 In the context of the present invention, a regulator member suitable for controlling the contact between a protrusion and a substrate means a member suitable for controlling the interaction force of the substrate against the protrusion when contact occurs between those two elements.
例如,可存在作為調節器構件的包含比例校正器(通常被稱為P校正器)、積分比例校正器(通常被稱為PI校正器)或比例積分微分校正器(通常被稱為PID校正器)之構件。 For example, there may be a component including a proportional corrector (commonly referred to as a P corrector), an integral proportional corrector (commonly referred to as a PI corrector), or a proportional integral differential corrector (commonly referred to as a PID corrector) as a regulator component.
在本發明之上下文中,至少適於將基板移動為更接近或更遠離奈米噴射器之第一移位構件意指適於以某種方式移動基板之構件,使得沿著軸線z將基板移動為更接近或更遠離奈米噴射器,以控制基板與突 起之間的接觸。 In the context of the present invention, at least a first displacement member adapted to move the substrate closer to or further away from the nano-injector means a member adapted to move the substrate in such a way that the substrate is moved closer to or further away from the nano-injector along the axis z to control the contact between the substrate and the protrusion.
第一移位構件可連接至適於沿著與軸線z正交之軸線x、y移動基板以產生圖案之第二移位構件,三條正交軸線x、y及z形成正三面體。因此,第一移位構件使得能夠調節突起與基板之間的接觸,且第二移位構件使得能夠產生預界定圖案。 The first displacement member can be connected to a second displacement member suitable for displacing the substrate along axes x, y orthogonal to axis z to generate a pattern, the three orthogonal axes x, y and z forming a regular trihedron. Thus, the first displacement member enables the contact between the protrusion and the substrate to be adjusted, and the second displacement member enables the generation of a predefined pattern.
第一移位構件及第二移位構件較佳地包含於單個移位系統中。 The first displacement member and the second displacement member are preferably included in a single displacement system.
第一移位構件及/或第二移位構件較佳地包含具有次奈米解析度之壓電馬達。 The first displacement member and/or the second displacement member preferably comprises a piezoelectric motor having sub-nanometer resolution.
儲集器可較佳地連接至外部儲集器。因此待沉積液體之容積係可調整的。 The reservoir can preferably be connected to an external reservoir. The volume of the liquid to be deposited is thus adjustable.
本發明之另一目標在於一種在基板上沉積液體之方法,該方法包含以下步驟:a)取得如上文所界定之系統,b)藉由該激勵構件激勵該機械諧振器以使該機械諧振器開始以振盪頻率振盪來開始該突起之經控制振盪,該機械諧振器之該振盪被傳輸至該突起,c)藉助於該第一移位構件將該基板移動為較接近該突起,以便在該基板與該突起之間產生動態接觸,該突起在該突起接觸該基板之低位置與該突起並不接觸該基板之高位置之間振盪,d)由該偵測器構件偵測該機械諧振器之該振盪,以觀察在該突起與該基板之間發生接觸時之振盪變化,e)藉助於該調節器構件且隨振盪變化而變,調整該突起與該基板之 間的動態接觸,以便在該突起與該基板之間形成彎液面,f)在該突起與該基板之間發生接觸期間經由該噴射孔口在該基板上沉積液體。 Another object of the present invention is a method for depositing a liquid on a substrate, the method comprising the steps of: a) obtaining a system as defined above, b) starting a controlled oscillation of the protrusion by exciting the mechanical resonator by means of the excitation member so that the mechanical resonator starts to oscillate at an oscillation frequency, the oscillation of the mechanical resonator being transmitted to the protrusion, c) moving the substrate closer to the protrusion by means of the first displacement member so as to generate a dynamic contact between the substrate and the protrusion, the protrusion being in contact with the protrusion. d) detecting the oscillation of the mechanical resonator by the detector member to observe the oscillation change when the contact occurs between the protrusion and the substrate, e) adjusting the dynamic contact between the protrusion and the substrate by means of the regulator member and in accordance with the oscillation change so as to form a curved liquid surface between the protrusion and the substrate, f) depositing liquid on the substrate through the ejection orifice during the contact between the protrusion and the substrate.
應注意,系統可根據奈米噴射器豎直地定位,亦即在希望沉積液體之表面與安置奈米噴射器之方向之間的傾斜角接近於90°時之組態起作用。 It should be noted that the system can function in a configuration where the nanoinjector is positioned vertically, i.e., where the tilt angle between the surface on which the liquid is desired to be deposited and the direction in which the nanoinjector is positioned is close to 90°.
應注意,根據本發明之方法,有可能同時進行步驟b)、d)、e)及f)中之至少兩者。 It should be noted that according to the method of the present invention, it is possible to perform at least two of steps b), d), e) and f) simultaneously.
應注意,沉積可係連續或不連續的,不連續沉積可能係或並非根據預界定圖案的,係可再現或不可再現的。 It should be noted that deposition may be continuous or discontinuous, discontinuous deposition may or may not be according to a predefined pattern, and may or may not be reproducible.
在本發明之上下文中,動態接觸意指在機械諧振器之振盪頻率下的不連續或間歇接觸。 In the context of the present invention, dynamic contact means discontinuous or intermittent contact at the oscillation frequency of the mechanical resonator.
應注意,藉助於包含小於1μm之噴射孔口的奈米噴射器,有可能獲得厚度介於噴射孔口之直徑的1%與150%之間,包括1%及150%,的沉積物。 It should be noted that with a nanojet including a jet orifice smaller than 1 μm, it is possible to obtain deposits having a thickness between 1% and 150% of the diameter of the jet orifice, inclusive.
在本發明之上下文中,由機械諧振器之控制構件進行控制意指由以下組成之控制:至少分析振盪頻率,及可能亦分析與振盪相關之額外參數,諸如振盪之頻率、振幅相位或另外激勵。 In the context of the present invention, control by a control element of a mechanical resonator means control consisting of analyzing at least the oscillation frequency and possibly also additional parameters related to the oscillation, such as the frequency, amplitude, phase or other excitation of the oscillation.
該低位置與該高位置之間的距離可較佳地介於1nm與1μm之間,包括1nm及1μm。 The distance between the low position and the high position may preferably be between 1 nm and 1 μm, inclusive.
系統可較佳地進一步包含使奈米噴射器根據可即時修改以產生第一層之軌跡在基板上掃掠之步驟g)。 The system may preferably further comprise the step of causing the nanojet to scan over the substrate according to a trajectory that can be modified in real time to produce the first layer (g).
應注意,軌跡可經預界定以便產生所需圖案或遵循任何方 向。 It should be noted that the trajectory can be predefined to produce a desired pattern or follow any direction.
亦應注意,第一層可係連續或不連續的。 It should also be noted that the first layer can be continuous or discontinuous.
可較佳地在維持了突起與基板之間的恆定且預界定接觸之情況下進行掃掠步驟g)。 The scanning step g) can preferably be performed while maintaining a constant and predefined contact between the protrusion and the substrate.
系統可較佳地進一步包含對第一層進行凝固之步驟。此凝固步驟使得能夠在第一層上產生第二層期間提供溶解電位及/或降解電位。此凝固步驟可為後續步驟或在沉積期間即時地進行。應注意,此步驟係可選的,因為可能簡單地進行在自奈米噴射器提取時本質上較硬之液體的沉積。 The system may preferably further comprise a step of solidifying the first layer. This solidification step enables providing a dissolution potential and/or a degradation potential during the generation of the second layer on the first layer. This solidification step may be a subsequent step or performed in real time during the deposition. It should be noted that this step is optional, as it is possible to simply perform the deposition of a liquid that is inherently harder when extracted from the nanojet.
應注意,根據所沉積液體之性質,凝固步驟之執行係不同的。 It should be noted that the solidification step is performed differently depending on the nature of the deposited liquid.
使奈米噴射器掃掠之步驟g)可較佳地以小於40μm/s之速度進行。 The nanojet scanning step g) can be preferably performed at a speed less than 40μm/s.
應注意,為有利於規則沉積,可能例如減小掃掠速度及/或減小振盪之振幅。此外,同樣可使用具有小型粒度範圍的包含成溶液物種之液體,該範圍亦即為振盪之振幅的十分之一及為所需沉積物厚度之十分之一。 It should be noted that, in order to facilitate regular deposition, it is possible, for example, to reduce the sweeping speed and/or reduce the amplitude of the oscillations. Furthermore, it is also possible to use a liquid containing the dissolved species with a small particle size range, i.e. one tenth of the amplitude of the oscillations and one tenth of the desired deposition thickness.
在進行使奈米噴射器掃掠之步驟g)之後,系統可較佳地進一步包含以下步驟:h)由該機械諧振器之該控制構件至少控制該突起與該第一層之間的該接觸及該振盪頻率,i)在該第一層上沉積一第二層,j)重複前述步驟h)及i),直至獲得一所需厚度為止。 After performing step g) of scanning with the nanojet, the system may preferably further include the following steps: h) controlling at least the contact and the oscillation frequency between the protrusion and the first layer by the control member of the mechanical resonator, i) depositing a second layer on the first layer, j) repeating the above steps h) and i) until a desired thickness is obtained.
控制步驟h)使得能夠在突起與第一層之間獲得自接觸,以便防止彼第一層之劣化。 Control step h) enables self-contact to be obtained between the protrusion and the first layer in order to prevent degradation of the first layer.
本發明之另一目標關注一種如上文所界定系統之用途,其用於增材製造。 Another object of the invention concerns the use of a system as defined above for additive manufacturing.
本發明之另一目標關注一種藉由如上文所界定方法獲得之產物,該產物包含具有由大於或等於1μm之長度界定的形狀之一或多個均勻且穩定層。 Another object of the invention concerns a product obtained by a method as defined above, comprising one or more uniform and stable layers having a shape defined by a length greater than or equal to 1 μm.
然而,特定而言在使用連接至奈米噴射器之儲集器的外部儲集器時,可沉積長度比1μm大得多,例如數千米之層。 However, in particular when using an external collector connected to the collector of the nanojet, it is possible to deposit layers with lengths much greater than 1 μm, for example layers of kilometers.
應注意,所沉積層之最小寬度為突起之外徑的最小寬度,且可因此介於例如0.5nm與100μm之間,包括0.5nm及100μm,且較佳地介於5nm與300nm之間,包括5nm及300nm。此外,應注意,所沉積層之高度隨液體黏度降低而降低,在奈米噴射器之掃掠速度降低時降低,在振盪之振幅增大時增大,且在突起之內徑增大時增大。 It should be noted that the minimum width of the deposited layer is the minimum width of the outer diameter of the protrusion, and may therefore be, for example, between 0.5 nm and 100 μm, inclusive, and preferably between 5 nm and 300 nm, inclusive. Furthermore, it should be noted that the height of the deposited layer decreases as the viscosity of the liquid decreases, decreases when the scanning speed of the nanojet is reduced, increases when the amplitude of the oscillation increases, and increases when the inner diameter of the protrusion increases.
例如,第一層之厚度與寬度之間的最大比率可大約等於0.4。 For example, the maximum ratio between the thickness and width of the first layer may be approximately equal to 0.4.
所獲得產物可較佳地包含複數個疊層。 The resulting product may preferably contain multiple layers.
應注意,例如藉由減小液體之黏度;藉由增大突起之滲透率,亦即藉由增大液體在儲集器與彎液面之間的給定施力下流過突起之能力;藉由增大突起之內部截面;藉由增大液體對於基板之材料及突起之外部材料的親和力;藉由使用低諧振頻率諧振器以便在仍能夠進行偵測的同時減小突起之振盪頻率並減小振盪振幅,可有利於高位置與低位置之間的彎液面之穩定性。 It should be noted that the stability of the bend between the high and low positions can be improved, for example, by reducing the viscosity of the liquid; by increasing the permeability of the protrusion, that is, by increasing the ability of the liquid to flow through the protrusion under a given applied force between the reservoir and the bend; by increasing the internal cross-section of the protrusion; by increasing the affinity of the liquid for the material of the substrate and the external material of the protrusion; by using a low-frequency resonator to reduce the oscillation frequency of the protrusion and reduce the oscillation amplitude while still enabling detection.
在本發明之上下文中,給定施力意指將經控制壓力施加至儲集器中之液體。例如,此強制性施力可使用壓縮空氣進行、藉由活塞/氣缸系統機械地進行,或另外藉由在基板與奈米噴射器之間施加電壓來以電方式進行。 In the context of the present invention, a given force means applying a controlled pressure to the liquid in the reservoir. For example, this forced force can be applied using compressed air, mechanically by a piston/cylinder system, or electrically by applying a voltage between the substrate and the nanojet.
因此,藉助於本發明可能以局部化方式進行印刷以產生具有奈米或微米電路之連接。 Therefore, with the aid of the present invention it is possible to print in a localized manner to produce connections with nano- or micro-circuits.
1:第一PID校正器,步驟 1: First PID corrector, step
2:第二PID校正器,步驟 2: Second PID corrector, step
3':步驟 3': Step
3:步驟 3: Step
4:步驟 4: Step
5:步驟 5: Step
5':步驟 5': Step
6:步驟 6: Step
7:步驟 7: Step
7':步驟 7': Step
8:步驟 8: Step
9:步驟 9: Step
10:系統 10: System
20:基板 20: Substrate
100:奈米噴射器 100:Nanojet
102:儲集器 102: Storage device
104:不可變形突起 104: Non-deformable protrusions
108:噴射孔口 108: jet orifice
120:機械諧振器 120: Mechanical resonator
142:激勵構件 142: Motivational components
144:偵測器構件 144: Detector components
146:調節器構件 146: Regulator components
148:控制構件 148: Control components
160:第一移位構件 160: First displacement member
f0:頻率 f0: frequency
fi:振盪頻率 fi: Oscillation frequency
x:軸線 x:axis
y:軸線 y:axis
z:軸線 z:axis
在閱讀以下描述後,將更好地理解本發明,該描述僅藉助於實例給出且參考以下附圖,在附圖中:[圖1]表示根據本發明之較佳實施例的系統,[圖2]表示展示可進行以使根據本發明之較佳實施例的系統起作用之步驟的圖式。 The present invention will be better understood after reading the following description, which is given by way of example only and with reference to the following accompanying drawings, in which: [FIG. 1] represents a system according to a preferred embodiment of the present invention, [FIG. 2] represents a diagram showing the steps that can be performed to make the system according to a preferred embodiment of the present invention function.
[圖1]展示用於基板20上液體之經控制沉積的系統10。 [FIG. 1] shows a system 10 for controlled deposition of a liquid on a substrate 20.
例如,可存在作為液體的任何類型之液體,諸如SU8 2002溶液、SU 8 2010溶液、離子液體、凝膠或糊劑。 For example, any type of liquid may be present as a liquid, such as a SU8 2002 solution, a SU 8 2010 solution, an ionic liquid, a gel or a paste.
此處使用之基板為具有小於一奈米之粗糙度的平坦基板。 The substrate used here is a flat substrate with a roughness of less than one nanometer.
[圖1]系統包含奈米噴射器100,其包含用於儲存液體之儲集器102,及具有噴射孔口108以用於自儲集器102提取液體之不可變形突起104。 [Figure 1] The system includes a nano-injector 100, which includes a reservoir 102 for storing liquid, and a non-deformable protrusion 104 having an injection orifice 108 for extracting liquid from the reservoir 102.
例如,應注意,可藉由使用薩特儀器(Sutter Instruments)P-2000雷射拉制儀、長度大約等於2cm之圓柱形形狀玻璃毛細管,及2毫米長之錐形螺紋來進行雷射拉制而產生儲集器102及具有奈米大小之奈米 噴射器100。在雷射拉制之後,毛細管之內徑在0,5mm至頂點處之幾奈米範圍內變化。在此組態中,奈米噴射器100具有用於儲存液體之管道。管道具有插入有奈米管之錐形端,該奈米管具有用於使突起104功能化之噴射孔口108。管道接著可由玻璃製成且具有大約等於20nm之內徑。奈米管可為碳奈米管,其大約1μm長且具有大約等於20nm之外徑及大約等於1nm之內徑。 For example, it is noted that the reservoir 102 and the nano-injector 100 with nano-size can be produced by laser pulling using a Sutter Instruments P-2000 laser puller, a cylindrical shaped glass capillary tube with a length of approximately 2 cm, and a 2 mm long tapered thread. After laser pulling, the inner diameter of the capillary tube varies from 0.5 mm to a few nanometers at the apex. In this configuration, the nano-injector 100 has a tube for storing liquid. The tube has a tapered end into which a nanotube is inserted, which has an ejection orifice 108 for functionalizing the protrusion 104. The tube can then be made of glass and have an inner diameter of approximately 20 nm. The nanotubes may be carbon nanotubes that are approximately 1 μm long and have an outer diameter of approximately 20 nm and an inner diameter of approximately 1 nm.
應注意,為增大可用之待沉積液體的容積,儲集器102可連接至外部儲集器([圖1]中未示出)。 It should be noted that in order to increase the volume of liquid available for deposition, the reservoir 102 can be connected to an external reservoir (not shown in [Figure 1]).
系統10進一步包含固定至奈米噴射器100之機械諧振器120。 The system 10 further includes a mechanical resonator 120 fixed to the nanojet 100.
機械諧振器120可呈音叉之形式,該音叉之主體在其基座處旋擰至能夠藉由微米螺釘系統沿著三條空間軸線移動的區塊。在此組態中,奈米噴射器100例如使用膠黏劑黏至音叉之凸耳,使得噴射孔口108朝向定位在壓電掃描儀上之基板20向下導向。用作儲集器102的奈米噴射器100之主體填充有待藉助於微米注射器沉積之液體,液體亦藉由毛細作用填充螺紋。例如,音叉可包含可由鋁製成且具有大約等於1cm之直徑及大約等於10cm之長度的分支。奈米噴射器100接著可固定至音叉之自由端。音叉設計成以便能夠再現與構成AFM中大體上使用之石英音叉的各種元件相同[之]幾何形狀及尺寸比率。 The mechanical resonator 120 may be in the form of a tuning fork, the body of which is twisted at its base to a block that can be moved along three spatial axes by a system of micro screws. In this configuration, the nanojet 100 is glued to the lugs of the tuning fork, for example using adhesive, so that the ejection orifice 108 is directed downwardly towards the substrate 20 positioned on the piezoelectric scanner. The body of the nanojet 100, which serves as a reservoir 102, is filled with the liquid to be deposited by means of a micro syringe, which also fills the threads by capillary action. For example, the tuning fork may comprise branches that may be made of aluminum and have a diameter approximately equal to 1 cm and a length approximately equal to 10 cm. The nanojet 100 can then be fixed to the free end of a tuning fork. The tuning fork is designed so as to be able to reproduce the same geometric shape and dimensional ratios of the various elements that make up the quartz tuning fork generally used in AFM.
應注意,機械諧振器120較佳具有充分高的品質因數,以可能在所要頻率偏移下調節接觸。例如,可能使用品質因數大約為10000之機械諧振器120,以便使得諧振頻率與品質因數之間的比率在0.1與20之間,包括0.1與20。 It should be noted that the mechanical resonator 120 preferably has a sufficiently high quality factor to make it possible to adjust the contact at the desired frequency offset. For example, a mechanical resonator 120 with a quality factor of approximately 10,000 may be used so that the ratio between the resonant frequency and the quality factor is between 0.1 and 20, inclusive.
系統10進一步包含機械諧振器120之控制構件148。此控制 構件148使得能夠控制液體在基板20上之沉積。 The system 10 further comprises a control member 148 of the mechanical resonator 120. This control member 148 enables the deposition of the liquid on the substrate 20 to be controlled.
控制構件148特定而言連接至激勵構件142以激勵機械諧振器120,以使機械諧振器120以振盪頻率fi振盪,使得突起104在突起104接觸基板20之低位置與突起104不接觸基板20之高位置之間振盪,該控制構件在此實施例中為包含第一PID校正器1之振盪器。此實施例中存在作為激勵構件142之壓電激勵器。此壓電激勵器黏至機械諧振器120。 The control member 148 is specifically connected to the excitation member 142 to excite the mechanical resonator 120 so that the mechanical resonator 120 oscillates at an oscillation frequency fi, so that the protrusion 104 oscillates between a low position where the protrusion 104 contacts the substrate 20 and a high position where the protrusion 104 does not contact the substrate 20. The control member 148 is an oscillator including the first PID corrector 1 in this embodiment. In this embodiment, there is a piezoelectric exciter as the excitation member 142. This piezoelectric exciter is bonded to the mechanical resonator 120.
低位置與高位置之間的距離取決於系統之所有特性,例如突起之本質、待沉積之液體、振盪頻率、基板20之本質或此外取決於基板20之移動速度。 The distance between the low position and the high position depends on all characteristics of the system, such as the nature of the protrusions, the liquid to be deposited, the oscillation frequency, the nature of the substrate 20 or else on the movement speed of the substrate 20.
控制構件148此外連接至偵測器構件144,其適於偵測機械諧振器120之振盪,以便讀出機械諧振器120對激勵構件142之激勵的回應。在此實施例中,偵測器構件144為亦黏至機械諧振器120之加速計。 The control member 148 is further connected to a detector member 144 which is adapted to detect the oscillations of the mechanical resonator 120 in order to read the response of the mechanical resonator 120 to the stimulus of the stimulus member 142. In this embodiment, the detector member 144 is an accelerometer which is also bonded to the mechanical resonator 120.
控制構件148此外連接至調節器構件146,其適於藉由控制機械諧振器120之振盪來調整突起104與基板20之間的接觸。 The control member 148 is further connected to the regulator member 146, which is suitable for adjusting the contact between the protrusion 104 and the substrate 20 by controlling the oscillation of the mechanical resonator 120.
調節器構件146為第二PID校正器2,且使得能夠藉助於第一移位構件160來調整接觸,該第一移位構件連接至調節器構件且適於沿著軸線z將基板20及奈米噴射器100移動為較靠近在一起或進一步隔開。此外,第一移位構件160連接至適於沿著軸線x及y移動基板20之第二移位構件,三條軸線x、y及z正交且形成正三面體,以使得任何原子能夠產生在基板之表面上。為保證高準確度,第一移位構件160及/或第二移位構件包含具有次奈米解析度之壓電馬達。特定而言,第一移位構件160及第二移位構件可為單個移位系統之部分。單個移位系統可例如為在上面沉積基板20之壓電掃描儀。壓電掃描儀具有大約等於50μm之最大行進。 The regulator member 146 is a second PID corrector 2 and enables the contact to be adjusted by means of a first displacement member 160, which is connected to the regulator member and is suitable for moving the substrate 20 and the nano-injector 100 closer together or further apart along the axis z. In addition, the first displacement member 160 is connected to a second displacement member suitable for moving the substrate 20 along the axes x and y, the three axes x, y and z being orthogonal and forming a regular trihedron, so that any atom can be generated on the surface of the substrate. To ensure high accuracy, the first displacement member 160 and/or the second displacement member comprise a piezoelectric motor with sub-nanometer resolution. In particular, the first displacement member 160 and the second displacement member can be part of a single displacement system. The single displacement system may be, for example, a piezoelectric scanner on which the substrate 20 is deposited. A piezoelectric scanner has a maximum travel of approximately 50 μm.
此外,聚焦於噴射孔口108之視訊攝影機可此外用於觀察奈米噴射器100與基板20較靠近在一起之移動。 Additionally, a video camera focused on the ejection orifice 108 can be used to observe the movement of the nano-injector 100 and substrate 20 closer together.
應注意,在此實施例中,基板在壓電掃描儀之移動平面與基板之平面之間的傾斜角小於5°。 It should be noted that in this embodiment, the tilt angle of the substrate between the moving plane of the piezoelectric scanner and the plane of the substrate is less than 5°.
下文中參考[圖2]指示使用[圖1]中所示之系統在基板20上沉積液體之方法。 Reference is made to [FIG. 2] below to indicate a method of depositing a liquid on a substrate 20 using the system shown in [FIG. 1].
在[圖2]中之初步且可選步驟--步驟1中,在使用聚焦於噴射孔口108之視訊攝影機情況下,將突起104移動為較接近基板20以移動至小於50μm之距離,該視訊攝影機使用為機械諧振器120之音叉之微米螺釘進行聚焦,該距離對應於壓電掃描儀之最大行進,壓電掃描儀使得後續能夠將此兩個元件移動為較靠近在一起。 In a preliminary and optional step 1 in [Figure 2], the protrusion 104 is moved closer to the substrate 20 to a distance less than 50 μm using a video camera focused on the ejection orifice 108, the video camera being focused using a micron screw of a tuning fork of a mechanical resonator 120, the distance corresponding to the maximum travel of a piezoelectric scanner which enables the two elements to be subsequently moved closer together.
在[圖2]中之隨後步驟(步驟2)中,藉由壓電激勵器激勵音叉以使音叉以振盪頻率fi振盪,突起104開始經控制振盪。以此方式,音叉之振盪被傳輸至突起104。 In the subsequent step (step 2) in [Figure 2], the tuning fork is excited by the piezoelectric exciter so that the tuning fork vibrates at the vibration frequency fi, and the protrusion 104 begins to vibrate in a controlled manner. In this way, the vibration of the tuning fork is transmitted to the protrusion 104.
因此,在[圖2]中之另一步驟(步驟3')中,可能以判定音叉之諧振頻率及其品質因數之方式量測由音叉、壓電激勵器及加速計組成之系統的諧振。由壓電激勵器以處於頻率f0下之正常振盪的諧振機械地激勵音叉。由具有至多0.5nm之振幅的諧振靈敏度之加速計偵測振盪,該振幅在此情況下對應於在系統起作用時的最小振盪振幅,亦即對應於高位置與低位置之間的最小距離。 Therefore, in a further step (step 3') in [Figure 2], it is possible to measure the resonance of the system consisting of a tuning fork, a piezoelectric exciter and an accelerometer in such a way as to determine the resonance frequency of the tuning fork and its quality factor. The tuning fork is mechanically excited by the piezoelectric exciter with a resonance of a normal oscillation at a frequency f0. The oscillation is detected by an accelerometer having a resonance sensitivity of at most 0.5 nm of amplitude, which in this case corresponds to the minimum oscillation amplitude when the system is functional, i.e. to the minimum distance between the high position and the low position.
應注意,例如,壓電激勵器可經饋送有其頻率對應於其機械激勵頻率之電信號。此電信號之頻率由第一PID校正器1調整以控制音叉之振盪,使得由加速計偵測的音叉之回應與來自壓電激勵器之信號同 相,使得音叉根據壓電激勵器之振盪而振盪。此回饋迴路之設定點因此為壓電激勵器之振盪與音叉之振盪之間的相位差為零。音叉接著與壓電激勵器同相。音叉因此以其諧振頻率經激勵,該諧振頻率取決於其機械性質且還取決於與其環境之相互作用。 It should be noted that, for example, the piezoelectric exciter can be fed with an electrical signal whose frequency corresponds to the frequency of its mechanical excitation. The frequency of this electrical signal is adjusted by the first PID corrector 1 to control the oscillation of the tuning fork so that the response of the tuning fork detected by the accelerometer is in phase with the signal from the piezoelectric exciter, so that the tuning fork oscillates according to the oscillation of the piezoelectric exciter. The set point of this feedback loop is therefore zero phase difference between the oscillation of the piezoelectric exciter and the oscillation of the tuning fork. The tuning fork is then in phase with the piezoelectric exciter. The tuning fork is thus excited with its resonant frequency, which depends on its mechanical properties and also on the interaction with its environment.
在[圖2]中可與步驟3'同時執行之另一步驟--步驟3中,可能預界定第二PID校正器2之設定點振盪的相移,彼相移對應於藉由突起與基板20之間的預界定接觸誘發之相移。例如,此相移可為10mHz。 In another step, step 3, which can be performed simultaneously with step 3' in [Figure 2], it is possible to predefine a phase shift of the set point oscillation of the second PID corrector 2, which corresponds to the phase shift induced by the predefined contact between the protrusion and the substrate 20. For example, this phase shift can be 10mHz.
此後,在[圖2]中之另一步驟--步驟4中,藉助於壓電掃描儀將基板20移動為較接近突起104,以便產生基板20與突起104之間的動態接觸。突起104因此在其接觸基板20之低位置與其並不接觸基板20之高位置之間振盪。 Thereafter, in another step, step 4 in [FIG. 2], the substrate 20 is moved closer to the protrusion 104 by means of a piezoelectric scanner so as to generate dynamic contact between the substrate 20 and the protrusion 104. The protrusion 104 thus oscillates between a low position where it contacts the substrate 20 and a high position where it does not contact the substrate 20.
應注意,同時,由加速計偵測音叉之振盪以觀察突起104與基板20之間發生接觸後之振盪變化。 It should be noted that, at the same time, the oscillation of the tuning fork is detected by the accelerometer to observe the oscillation changes after the protrusion 104 and the substrate 20 come into contact.
因此,在突起104與基板20之間發生接觸後,修改施加至由音叉及奈米噴射器100組成之總成之力。此修改會修改諧振頻率,且因此修改壓電激勵器之激勵頻率,該激勵頻率經維持在音叉之諧振頻率下。例如,接著判定在由音叉及奈米噴射器100組成之總成的諧振頻率相對於壓電激勵器之激勵頻率修改了10mHz(如在步驟3中選定)時實現了動態接觸。因此,可能在進行後續步驟之前驗證系統未受到諧振頻率之時間漂移影響。 Thus, after contact occurs between the protrusion 104 and the substrate 20, the force applied to the assembly consisting of the tuning fork and the nanojet 100 is modified. This modification modifies the resonant frequency and therefore the excitation frequency of the piezoelectric actuator, which is maintained at the resonant frequency of the tuning fork. For example, it is then determined that dynamic contact is achieved when the resonant frequency of the assembly consisting of the tuning fork and the nanojet 100 is modified by 10 mHz relative to the excitation frequency of the piezoelectric actuator (as selected in step 3). Thus, it is possible to verify that the system is not affected by a temporal drift of the resonant frequency before proceeding to the subsequent steps.
此後,在[圖2]中之步驟5中,藉助於第二PID校正器2且隨振盪變化而變,以在突起104與基板20之間形成彎液面之方式調整突起104與基板20之間的動態接觸。基板20經置放在奈米噴射器100下具有次 奈米移動解析度之三軸線壓電掃描儀上(例如,所用壓電掃描儀可為Tritor101 Piezosystemjena)。第二PID校正器2歸功於回饋迴路來控制置放在壓電掃描儀上之基板20與奈米噴射器100之間的精細接近,直至突起104與基板20之間的接觸達到先前選擇的10mHz之諧振頻率設定點相移為止。音叉之硬度使得能夠實現經控制接近,且能夠防止由於突起104與基板20之間的彎液面而使突起104與基板20接觸時發生快速跳躍型效應。 Thereafter, in step 5 in [FIG. 2], the dynamic contact between the protrusion 104 and the substrate 20 is adjusted by means of the second PID corrector 2 and in accordance with the oscillation in such a way that a curved liquid surface is formed between the protrusion 104 and the substrate 20. The substrate 20 is placed on a three-axis linear piezoelectric scanner with sub-nanometer motion resolution under the nanojet 100 (for example, the piezoelectric scanner used may be Tritor101 Piezosystemjena). The second PID corrector 2 controls the fine approach between the substrate 20 placed on the piezoelectric scanner and the nano-injector 100 thanks to the feedback loop until the contact between the protrusion 104 and the substrate 20 reaches the previously selected resonant frequency set point phase shift of 10mHz. The stiffness of the tuning fork enables controlled approach and prevents rapid jump-type effects when the protrusion 104 contacts the substrate 20 due to the curved liquid surface between the protrusion 104 and the substrate 20.
在另一步驟中,在突起104與基板20之間發生接觸期間經由噴射孔口108將液體沉積在基板20上。 In another step, liquid is deposited on the substrate 20 through the ejection orifice 108 during contact between the protrusion 104 and the substrate 20.
此後,在[圖2]中之後續步驟--步驟6中,藉由相對於奈米噴射器100移動基板20,奈米噴射器100沿著可即時修改之軌跡在基板20上掃掠以產生第一層。 Thereafter, in the subsequent step 6 in [FIG. 2], by moving the substrate 20 relative to the nanojet 100, the nanojet 100 is scanned on the substrate 20 along a trajectory that can be modified in real time to produce the first layer.
歸功於[圖2]中之步驟5'中的第二PID校正器2調節及控制突起104與基板20之間的接觸,藉由移動基板20,同時恆定維持與奈米噴射器之相互作用來產生沉積設計。在奈米噴射器100與基板20之表面之間發生相互作用時進行即時偵測使得可能防止不可控地損害基板20及奈米噴射器100。 Thanks to the second PID corrector 2 in step 5' in [Figure 2] regulating and controlling the contact between the protrusion 104 and the substrate 20, the deposition design is generated by moving the substrate 20 while constantly maintaining the interaction with the nano-injector. Real-time detection when the interaction between the nano-injector 100 and the surface of the substrate 20 occurs makes it possible to prevent uncontrolled damage to the substrate 20 and the nano-injector 100.
第二PID校正器2可保持例如大約10mHz之設定點,或使其增大至幾Hz,條件為突起104抵抗此種與基板20間歇接觸之力。藉由對連接至第二PID校正器2之壓電掃描儀的電子控制來相對於基板20界定突起104之軌跡。亦界定此軌跡之行進速度。因此,能在維持突起104與基板20之間的恆定且預界定接觸之情況下進行掃掠。壓電掃描儀接著藉助於第二PID校正器2及壓電掃描儀以小於40μm/s之設定點速度遵循設定點軌跡且維持10mHz之頻率偏移。藉由彎液面在低位置與高位置之間的振盪 期間之穩定性來調節待不超出之限值速度。 The second PID corrector 2 can maintain a set point of, for example, about 10 mHz, or increase it to a few Hz, provided that the protrusion 104 resists the force of such intermittent contact with the substrate 20. The trajectory of the protrusion 104 is defined relative to the substrate 20 by electronic control of the piezoelectric scanner connected to the second PID corrector 2. The travel speed of this trajectory is also defined. Thus, scanning can be performed while maintaining a constant and predefined contact between the protrusion 104 and the substrate 20. The piezoelectric scanner then follows the set point trajectory with the help of the second PID corrector 2 and the piezoelectric scanner at a set point speed of less than 40 μm/s and maintaining a frequency deviation of 10 mHz. The limit speed to be exceeded is adjusted by the stability of the curved liquid surface during the oscillation between the low position and the high position.
在[圖2]中之另一步驟--步驟7'或8中,可能對第一層進行凝固。例如,在沉積了可聚合油墨時,可選擇在第一層上進行沉積第二層之前將所獲得第一層曝露至UV光。此凝固步驟可與沉積同時進行或之後進行。 In another step in [Figure 2], step 7' or 8, the first layer may be solidified. For example, when a polymerizable ink is deposited, the first layer obtained may be exposed to UV light before depositing a second layer on the first layer. This solidification step may be performed simultaneously with the deposition or thereafter.
在完成了沉積時,在[圖2]中之另一步驟--步驟7中,可藉由以中斷其間之接觸的方式使用壓電掃描儀來收回基板20或使其移動遠離奈米噴射器100。 When the deposition is completed, in another step, step 7 in [FIG. 2], the substrate 20 can be retrieved or moved away from the nanojet 100 by using a piezoelectric scanner in a manner that interrupts the contact therebetween.
此後,在[圖2]中之步驟9,可使用音叉之微米螺釘粗略地將突起104移動遠離基板20,此後收回上面已沉積有第一層之基板20。 Thereafter, in step 9 in [FIG. 2], the protrusion 104 may be roughly moved away from the substrate 20 using the micrometer screw of the tuning fork, and then the substrate 20 on which the first layer has been deposited may be retrieved.
在此種系統且使用此種方法之情況下,採用:- 奈米噴射器,其包含:儲集器,該儲集器具有10mm3之容積(具有大約等於0.5mm2之截面及大約等於2cm之長度的圓柱形形狀儲集器),且包含作為液體之SU8 2002溶液;並具有藉由插入碳奈米管而功能化之突起,該碳奈米管具有大約等於50nm之內徑及大約等於180nm之外徑的噴射孔口,- 音叉,其具有大約等於1.4.104之品質因數且在大約等於1.5kHz之頻率下振盪,並使突起在高位置與低位置之間振盪,彼等位置中之每一者為隔開小於10nm之距離,- 矽基板,- 基板之移動速度大約等於0.125μm/s,在數微米之長度上獲得了厚度大約等於30nm且寬度大約等於150nm之規則且穩定層。 In the case of such a system and using such a method, there is used: - a nano-injector comprising: a reservoir having a volume of 10 mm 3 (a cylindrical shape reservoir having a cross section approximately equal to 0.5 mm 2 and a length approximately equal to 2 cm) and containing as liquid a solution of SU8 2002; and having protrusions functionalized by inserting carbon nanotubes having an inner diameter approximately equal to 50 nm and an ejection orifice approximately equal to 180 nm, - a tuning fork having a quality factor approximately equal to 1.4.10 4 and oscillating at a frequency approximately equal to 1.5 kHz and causing the protrusions to oscillate between a high position and a low position, each of which positions being separated by a distance less than 10 nm, - Silicon substrate, - The substrate movement speed is about 0.125μm/s, and a regular and stable layer with a thickness of about 30nm and a width of about 150nm is obtained over a length of several microns.
在如前所述之相同條件下,在基板之移動速度大約等於0.5μm/s情況下,獲得了厚度大約等於5nm且寬度大約等於150nm之規則且穩定油墨層。 Under the same conditions as described above, when the substrate movement speed is approximately equal to 0.5μm/s, a regular and stable ink layer with a thickness of approximately 5nm and a width of approximately 150nm is obtained.
在如上文所指示之相同條件下,在突起藉由插入具有內徑大約等於1nm且外徑大約等於20nm之噴射孔口的碳奈米管而功能化之奈米噴射器作為奈米噴射器的情況下,在數微米之長度上獲得了厚度大約等於700pm且寬度大約等於20nm之規則且穩定油墨層。 Under the same conditions as indicated above, in the case of a nanoinjector in which the protrusions are functionalized by inserting a carbon nanotube having an ejection orifice with an inner diameter of about 1 nm and an outer diameter of about 20 nm, a regular and stable ink layer with a thickness of about 700 pm and a width of about 20 nm is obtained over a length of several micrometers.
在另一實例中,使用:- 作為奈米噴射器之奈米毛細管,其包含具有3mm3之容積且包含SU8 2010溶液之儲集器,且不具有功能化突起,但具有內徑大約等於200nm之噴射孔口,- 音叉,其具有大約等於1.4.104之品質因數且在大約等於1.5kHz之頻率下振盪,並使突起在高位置與低位置之間振盪,彼等位置中之每一者為隔開大約等於1nm之距離,- 矽基板,- 基板之移動速度小於40μm/s,在大約100μm之數微米的長度上獲得了厚度大約等於35nm且寬度大約等於200nm之規則且穩定油墨層。 In another example, used are: - a nanocapillary as a nanoinjector, comprising a reservoir having a volume of 3 mm 3 and containing a SU8 2010 solution, and having no functionalized protrusions but having an ejection orifice with an inner diameter of approximately 200 nm, - a tuning fork having a quality factor of approximately 1.4.10 4 and oscillating at a frequency of approximately 1.5 kHz and causing the protrusions to oscillate between a high position and a low position, each of which is separated by a distance of approximately 1 nm, - a silicon substrate, - a movement speed of the substrate of less than 40 μm/s, a regular and stable ink layer having a thickness of approximately 35 nm and a width of approximately 200 nm is obtained over a length of a few micrometers of approximately 100 μm.
在另一實例中,使用:- 奈米噴射器,其包含:儲集器,該儲集器具有10mm3之容積且包含作為液體之離子溶液(例如,稱為Bmim PF6之溶液);並具有藉由插入碳奈米管而功能化之突起,該碳奈米管具有內徑大約等於60nm且外徑大約等於5nm之噴射孔口, - 音叉,其具有大約等於1.4.104之品質因數且在大約等於1.5kHz之頻率下振盪,並使突起在高位置與低位置之間振盪,此等位置中之每一者為遠離小於50nm之距離,- 矽基板,- 基板之移動速度介於1與4μm/s之間,包括1及4μm/s,獲得了厚度大約等於0.5nm且寬度大約等於20nm之規則且穩定油墨層。 In another example, a nanoinjector is used, comprising: a reservoir having a volume of 10 mm 3 and containing an ionic solution as a liquid (for example, a solution called Bmim PF6); and having a protrusion functionalized by inserting a carbon nanotube having an ejection orifice with an inner diameter approximately equal to 60 nm and an outer diameter approximately equal to 5 nm, - a tuning fork having a quality factor approximately equal to 1.4.10 4 and oscillating at a frequency approximately equal to 1.5 kHz and causing the protrusion to oscillate between a high position and a low position, each of these positions being a distance less than 50 nm away, - a silicon substrate, - The substrate movement speed is between 1 and 4 μm/s, inclusive, and a regular and stable ink layer with a thickness of approximately 0.5 nm and a width of approximately 20 nm is obtained.
在使用此種且預界定軌跡之實例的情況下,可產生諸如正弦形或螺旋形或圓形之複雜形狀。 By using this instance of a predefined trajectory, complex shapes such as sinusoids or spirals or circles can be generated.
增材製造可用於產生三維有序物體。實際上,層亦可堆疊於彼此之頂部上,上面剛沉積第二層之第一層可能已預先藉由使用任何凝固製程而經凝固。例如,可連續堆疊大約十個層,每一層具有大約等於100nm之厚度,以便產生具有圓形形狀且具有大約等於1.5μm高之總厚度及8μm直徑的堆疊。 Additive manufacturing can be used to produce three-dimensional ordered objects. In practice, layers can also be stacked on top of each other, the first layer on which the second layer is just deposited having previously been solidified using any solidification process. For example, approximately ten layers, each having a thickness approximately equal to 100 nm, can be stacked in succession in order to produce a stack having a circular shape and having a total thickness approximately equal to 1.5 μm high and a diameter of 8 μm.
亦可以形成具有厚度為300nm之相交點之交叉物方式使兩個層交叉,該厚度等於可為單層厚度之150nm的兩倍,每一層具有大約等於100nm之厚度。 The two layers can also be crossed in such a way that a cross-section is formed with a thickness of 300nm at the intersection, which is equal to twice the thickness of 150nm that can be a single layer, with each layer having a thickness of approximately 100nm.
已在上文描述及圖式中詳細地展示及描述本發明。上文描述必須被視為說明性的且係藉助於實例給出而不將本發明限於此單個描述。眾多變化形式實施例係可能的。 The present invention has been shown and described in detail in the above description and drawings. The above description must be regarded as illustrative and is given by way of example without limiting the present invention to this single description. Many variations of embodiments are possible.
10:系統 10: System
20:基板 20: Substrate
100:奈米噴射器 100:Nanojet
102:儲集器 102: Storage device
104:不可變形突起 104: Non-deformable protrusions
108:噴射孔口 108: jet orifice
120:機械諧振器 120: Mechanical resonator
142:激勵構件 142: Motivational components
144:偵測器構件 144: Detector components
146:調節器構件 146: Regulator components
148:控制構件 148: Control components
160:第一移位構件 160: First displacement member
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| TW200937508A (en) * | 2007-09-21 | 2009-09-01 | Semiconductor Energy Lab | Substrate provided with semiconductor films and manufacturing method thereof |
| TW201005802A (en) * | 2008-03-17 | 2010-02-01 | Semiconductor Energy Lab | Plasma processing apparatus and method for manufacturing semiconductor device |
| TW201833353A (en) * | 2016-12-14 | 2018-09-16 | 美商應用材料股份有限公司 | Processing system for depositing one or more layers and methods therefor |
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| TW200937508A (en) * | 2007-09-21 | 2009-09-01 | Semiconductor Energy Lab | Substrate provided with semiconductor films and manufacturing method thereof |
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