TWI849520B - Molded article and molding method - Google Patents
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Abstract
本發明所揭示的技術為一種用以使被使用於基板處理裝置之構件的耐磨耗性提升之技術。本發明所揭示的技術的成形方法為被使用於基板處理裝置之成形品的成形方法。成形方法係具備下述工序:對由四氟乙烯以及乙烯的共聚物所構成的成形品照射電子射線。The technology disclosed in the present invention is a technology for improving the wear resistance of a component used in a substrate processing device. The molding method disclosed in the present invention is a molding method for a molded product used in a substrate processing device. The molding method comprises the following steps: irradiating a molded product composed of a copolymer of tetrafluoroethylene and ethylene with electron rays.
Description
本發明所揭示的技術為一種被使用於基板處理裝置之成形品。此外,成為處理對象之基板係例如包括半導體晶圓、液晶顯示裝置用玻璃基板、有機EL(electroluminescence;電致發光)顯示裝置等平面顯示器(FPD;flat panel display)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用玻璃基板、陶瓷基板、場發射顯示器(FED;field emission display)用基板或者太陽電池用基板等。The technology disclosed in the present invention is a molded product used in a substrate processing device. In addition, the substrate to be processed includes, for example, semiconductor wafers, glass substrates for liquid crystal display devices, organic EL (electroluminescence) display devices and other flat panel display (FPD) substrates, optical disk substrates, magnetic disk substrates, optical magnetic disk substrates, photomask glass substrates, ceramic substrates, field emission display (FED) substrates, or solar cell substrates.
在基板處理裝置中配置有眾多的配管或者閥等,配管係用以將用以處理基板之處理液導引至基板,閥係用以在該配管中控制處理液的流動(參照例如專利文獻1)。 [先前技術文獻] [專利文獻] A substrate processing device is provided with a plurality of pipes or valves, the pipes are used to guide a processing liquid used to process a substrate to the substrate, and the valves are used to control the flow of the processing liquid in the pipes (see, for example, Patent Document 1). [Prior Art Document] [Patent Document]
[專利文獻1]日本特開2009-222189號公報。[Patent Document 1] Japanese Patent Application Publication No. 2009-222189.
[發明所欲解決之課題][The problem that the invention wants to solve]
為了基板的均勻的處理,維持處理液的潔淨度是重要的。另一方面,會有下述情形:在構件中因為磨耗配管等從而產生微粒(particle),該微粒會混入至處理液。當產生此種混入時,處理液的潔淨度降低,變得難以進行均勻的基板處理。In order to process the substrate uniformly, it is important to maintain the cleanliness of the processing liquid. On the other hand, there may be a situation where particles are generated in the components due to wear of the piping, etc., and the particles are mixed into the processing liquid. When such mixing occurs, the cleanliness of the processing liquid is reduced, making it difficult to perform uniform substrate processing.
本案所揭示的技術係有鑑於以上所記載的課題而研創,為一種用以使被使用於基板處理裝置之構件的耐磨耗性提升之技術。 [用以解決課題的手段] The technology disclosed in this case was developed in view of the above-described subject matter and is a technology for improving the wear resistance of components used in substrate processing equipment. [Means for solving the subject matter]
本發明所揭示的技術的第一態樣為一種成形方法,係被使用於基板處理裝置之成形品的成形方法,並具備下述工序:對由四氟乙烯(tetrafluoroethylene)以及乙烯的共聚物所構成的前述成形品照射電子射線。The first aspect of the technology disclosed in the present invention is a molding method, which is a molding method used for a molded product of a substrate processing device and has the following steps: irradiating the above-mentioned molded product composed of a copolymer of tetrafluoroethylene and ethylene with electron rays.
本發明所揭示的技術的第二態樣的成形方法係如第一態樣所記載之成形方法,其中用以對前述成形品照射前述電子射線之工序為僅對前述成形品的一部分照射前述電子射線之工序。The second aspect of the forming method disclosed in the present invention is the forming method described in the first aspect, wherein the step of irradiating the aforementioned molded product with the aforementioned electron beam is a step of irradiating the aforementioned electron beam only to a portion of the aforementioned molded product.
本發明所揭示的技術的第三態樣的成形方法係如第二態樣所記載之成形方法,其中用以對前述成形品照射前述電子射線之工序為僅對前述成形品的端部照射前述電子射線之工序。The third aspect of the forming method disclosed in the present invention is the forming method described in the second aspect, wherein the step of irradiating the molded product with the electron beam is a step of irradiating only the end of the molded product with the electron beam.
本發明所揭示的技術的第四態樣的成形方法係如第一態樣至第三態樣中任一態樣所記載之成形方法,其中進一步具備下述工序:在照射前述電子射線後,將包含過氧化氫水之酸性的藥液賦予至前述成形品。The fourth aspect of the molding method disclosed in the present invention is a molding method as described in any one of the first to third aspects, further comprising the following step: after irradiating the aforementioned electron beam, applying an acidic solution containing hydrogen peroxide to the aforementioned molded product.
本發明所揭示的技術的第五態樣的成形方法係如第四態樣所記載之成形方法,其中用以將前述藥液賦予至前述成形品之工序為下述工序:將鹽酸與過氧化氫水的混合溶液或者硫酸與過氧化氫水的混合溶液之前述藥液賦予至前述成形品。The fifth aspect of the molding method disclosed in the present invention is the molding method described in the fourth aspect, wherein the process for applying the aforementioned chemical solution to the aforementioned molded product is the following process: applying the aforementioned chemical solution of a mixed solution of hydrochloric acid and hydrogen peroxide or a mixed solution of sulfuric acid and hydrogen peroxide to the aforementioned molded product.
本發明所揭示的技術的第六態樣為一種成形品,係被使用於基板處理裝置,由四氟乙烯以及乙烯的共聚物所構成且為褐色。 [發明功效] The sixth aspect of the technology disclosed in the present invention is a molded product, which is used in a substrate processing device and is composed of a copolymer of tetrafluoroethylene and ethylene and is brown in color. [Effect of the invention]
依據本發明所揭示的技術的至少第一態樣以及第六態樣,由於能獲得耐磨耗性高的成形品,因此能大幅度地抑制因為成形品的磨耗所產生的微粒。因此,在該成形品作為構件來使用之基板處理裝置中,能抑制微粒混入至用以處理基板之處理液。According to at least the first and sixth aspects of the technology disclosed in the present invention, since a molded product with high wear resistance can be obtained, particles generated by wear of the molded product can be greatly suppressed. Therefore, in a substrate processing device using the molded product as a component, particles can be suppressed from mixing into a processing liquid used to process a substrate.
此外,藉由以下所示的詳細的說明以及隨附圖式可更明瞭與本發明所揭示的技術關連之目的、特徵、態樣以及優點。In addition, the objectives, features, aspects and advantages of the technology disclosed in the present invention will be more clearly understood through the detailed description shown below and the accompanying drawings.
以下參照隨附的圖式說明實施形態。雖然在以下的實施形態中為了說明技術亦顯示了詳細的特徵等,然而這些詳細的特徵等僅為例示,這些詳細的特徵等並非全部皆是可據以實施的實施形態所必須的特徵。The following embodiments are described with reference to the accompanying drawings. Although detailed features are shown in the following embodiments for the purpose of illustrating the technology, these detailed features are only examples and are not all essential features for the embodiments that can be implemented.
此外,圖式為概略性地顯示之圖,為了方便說明,在圖式中適當地將構成省略或者將構成簡化。此外,於不同的圖式分別顯示的構成等之大小以及位置的相互關係並未正確地記載,會適當地變更。此外,為了容易理解實施形態的內容,亦會有在非為剖視圖之俯視圖等圖式中附上陰影線之情形。In addition, the drawings are schematically shown, and for the convenience of explanation, the components are appropriately omitted or simplified in the drawings. In addition, the size and position of the components shown in different drawings are not correctly described and will be changed appropriately. In addition, in order to facilitate the understanding of the content of the embodiment, there may be cases where hatching is attached to drawings such as top views that are not cross-sectional views.
此外,在以下所示的說明中,於同樣的構成要素附上相同的元件符號來圖示,且這些構成要素的名稱以及功能皆視為相同。因此,會有為了避免重複而省略這些構成要素的詳細說明之情形。In addition, in the following description, the same components are denoted by the same reference numerals, and the names and functions of these components are considered to be the same. Therefore, the detailed description of these components may be omitted to avoid duplication.
此外,在以下所記載的說明中,在記載成「具備」、「包含」或者「具有」某個構成要素等之情形中,只要未特別說明則此種記載並非是將其他的構成要素的存在予以排除之排他式的表現。In the following description, when a certain constituent element is described as “having”, “including” or “having”, such description does not constitute an exclusive expression that excludes the existence of other constituent elements unless otherwise specified.
此外,在以下所記載的說明中,即使在使用了「第一」或者「第二」等排序數字之情形中,這些用語亦為為了容易理解實施形態的內容而適宜使用的用語,而非是限定於這些排序數字所產生的順序等。In the following description, even when numbers such as "first" or "second" are used, these terms are used to facilitate understanding of the contents of the embodiments and are not limited to the order generated by these numbers.
此外,在本說明書中所記載的說明中,「…軸正方向」或者「…軸負方向」等之表現係將圖式中之沿著…軸的箭頭之方向作為正方向,將圖式中之與…軸的箭頭相反側之方向作為負方向。In the descriptions described in this specification, the expressions "positive direction of the ...axis" or "negative direction of the ...axis" etc. are taken as the positive direction along the arrow of the ...axis in the figure, and the direction on the opposite side of the arrow of the ...axis in the figure is taken as the negative direction.
此外,在本說明書中所記載的說明中,即使在使用了表示「上」、「下」、「左」、「右」、「側」、「底」、「表」或者「背」等特定的位置或者方向之用語的情形中,這些用語亦為為了容易理解實施形態的內容而適宜使用的用語,而與實際實施時的位置或者方向無關。In addition, in the descriptions recorded in this manual, even when terms indicating specific positions or directions such as "up", "down", "left", "right", "side", "bottom", "front" or "back" are used, these terms are used appropriately to facilitate understanding of the content of the implementation form and have nothing to do with the position or direction during actual implementation.
此外,在本說明書中所記載的說明中,在記載成「…的上表面」或者「…的下表面」等之情形中,除了成為對象之構成要素的上表面本體或者下表面本體之外,亦包含了於成為對象之構成要素的上表面或者下表面形成有其他的構成要素之狀態。亦即,例如在記載成「設置於甲的上表面之乙」之情形中,亦不會妨礙於甲與乙之間夾著其他的構成要素的「丙」。Furthermore, in the descriptions recorded in this specification, when it is recorded as "the upper surface of..." or "the lower surface of...", in addition to the upper surface body or the lower surface body of the constituent element being the object, it also includes the state where other constituent elements are formed on the upper surface or the lower surface of the constituent element being the object. That is, for example, when it is recorded as "B disposed on the upper surface of A", it does not interfere with "C" which is another constituent element sandwiched between A and B.
此外,在本說明書中所記載的說明中,只要未特別地說明,則用以表示形狀之表現,例如「四角形狀」或者「圓筒形狀」等係不僅幾何學性地且嚴密地表示所指稱的形狀,亦表示在公差或者能獲得相同程度的功效的範圍內具有例如凹凸或者倒角等的形狀。In addition, in the descriptions recorded in this manual, unless otherwise specified, expressions used to indicate shapes, such as "quadrilateral shape" or "cylindrical shape", etc., not only geometrically and strictly indicate the shapes referred to, but also indicate shapes having, for example, concave-convex or chamfered shapes within a tolerance range or a range that can achieve the same degree of effectiveness.
[實施形態] 以下,說明本發明的實施形態的成形品以及成形方法。 [Implementation form] The following describes the molded product and molding method of the implementation form of the present invention.
[針對基板處理裝置1的構成]
首先,說明使用成形品之基板處理裝置1的構成。
[Regarding the structure of the substrate processing device 1]
First, the structure of the
圖1係概略性地顯示本實施形態的基板處理裝置1的構成的例子之俯視圖。基板處理裝置1係具備裝載埠(load port)601、索引機器人(indexer robot)602、中心機器人(center robot)603、控制部90以及至少一個處理單元600(在圖1中為四個處理單元)。Fig. 1 is a top view schematically showing an example of the structure of a
基板處理單元600為能使用於基板處理之葉片式的裝置,具體而言為進行用以去除附著於基板W的有機物的處理之裝置。附著於基板W的有機物係例如為使用完畢的阻劑(resist)膜。該阻劑膜係例如作為離子植入工序用的植入遮罩而被使用。The
此外,處理單元600係能具有腔室(chamber)180。在此種情形中,藉由控制部90控制腔室180內的氛圍(atmosphere),藉此處理單元600係能進行期望的氛圍中的基板處理。In addition, the
控制部90係能控制基板處理裝置1中的各個構成的動作。承載器(carrier)C為用以收容基板W之收容器。此外,裝載埠(load port)601為用以保持複數個承載器C之收容器保持機構。索引機器人602係能在裝載埠601與基板載置部604之間搬運基板W。中心機器人603係能在基板載置部604與處理單元600之間搬運基板W。The
藉由上述構成,索引機器人602、基板載置部604以及中心機器人603係作為搬運機構發揮作用,用以在各個處理單元600與裝載埠601之間搬運基板W。With the above configuration, the
未處理的基板W係被索引機器人602從承載器C取出。接著,未處理的基板W係經由基板載置部604被傳遞至中心機器人603。The unprocessed substrate W is taken out from the carrier C by the
中心機器人603係將該未處理的基板W搬入至處理單元600。接著,處理單元600係對基板W進行處理。The
在處理單元600中處理完畢的基板W係被中心機器人603從處理單元600取出。接著,處理完畢的基板W係因應需要經由其他的處理單元600後,再經由基板載置部604被傳遞至索引機器人602。索引機器人602係將處理完畢的基板W搬入至承載器C。藉由上述,對基板W進行處理。The substrate W processed in the
圖2係顯示圖1所示的例子的控制部90的構成的例子之圖。控制部90亦可藉由具有電性電路之一般的電腦所構成。具體而言,控制部90係具有CPU(central processing unit;中央處理單元))91、ROM(read only memory;唯讀記憶體)92、RAM(random access memory;隨機存取記憶體)93、記錄裝置94、輸入部96、顯示部97、通訊部98以及用以相互地連接這些構件之匯流排線(bus line)95。FIG. 2 is a diagram showing an example of the configuration of the
ROM92係儲存基本程式。RAM93係作為CPU91進行預定的處理時的作業區域來使用。記錄裝置94係藉由快閃記憶體或者硬碟裝置等之非揮發性記錄裝置所構成。輸入部96係藉由各種開關或者觸摸面板(touch panel)等所構成,從使用者接收處理處方(processing recipe)等之輸入設定指示。顯示部97係例如藉由液晶顯示裝置以及燈等所構成,在CPU91的控制下顯示各種資訊。通訊部98係具有經由LAN(local area network;區域網路)等的資料通訊功能。ROM92 stores basic programs. RAM93 is used as a working area when CPU91 performs predetermined processing.
於記錄裝置94預先設定有針對圖1中的基板處理裝置1中的各個構成的控制之複數個模式。CPU91係執行處理程式94P,藉此選擇該複數個模式中的一個模式並以該模式控制各個構成。此外,處理程式94P亦可記憶於外部的記錄媒體。若使用此記錄媒體,能將處理程式94P裝載(install)至控制部90。此外,控制部90所執行的功能的一部分或者全部並不一定需要藉由軟體來實現,亦可藉由專用的邏輯電路等硬體來實現。A plurality of modes for controlling each component in the
[針對處理單元600]
圖3係顯示處理單元600的構成的例子之圖。如圖3的例子所示,處理單元600係具備:自轉夾具(spin chuck)10,係一邊以略水平姿勢保持一片基板W,一邊使基板W繞著通過基板W的中央部之鉛直的旋轉軸線Z1旋轉;處理液噴嘴20,係對基板W噴出處理液;噴嘴臂22,係於端部安裝有處理液噴嘴20;以及筒狀的處理罩杯12,係繞著基板W的旋轉軸線Z1圍繞自轉夾具10。
[For the processing unit 600]
FIG. 3 is a diagram showing an example of the configuration of the
在設想複數種類的處理液之情形中,處理液噴嘴20亦可與各種處理液對應地設置有複數個。處理液噴嘴20係對基板W的上表面噴出處理液。此外,於用以對處理液噴嘴20供給處理液之配管設置有膜片閥124,膜片閥124係用以控制處理液的供給。膜片閥124係例如被控制部90控制。In the case where a plurality of types of processing liquids are envisioned, a plurality of processing
自轉夾具10係具備:圓板狀的自轉基座(spin base)10A,係真空吸附略水平姿勢的基板W的下表面;旋轉軸10C,係從自轉基座10A的中央部朝下方延伸;以及自轉馬達(spin motor)10D,係使旋轉軸10C旋轉,藉此使被吸附於自轉基座10A的基板W旋轉。此外,亦可使用夾持式的夾具,該夾持式的夾具係具備複數個夾具銷(chuck pin)以取代自轉夾具10,夾具銷係從自轉基座10A的上表面外周部朝上方突出,該夾持式的夾具係藉由該夾具銷夾持基板W的周緣部。The
噴嘴22係具備臂部22A、軸體22B以及驅動部22C。驅動部22C係調整軸體22B的伸縮以及繞著軸體22B的軸的角度。臂部22A的一方的端部係被固定於軸體22B,臂部22A的另一方的端部係配置成與軸體22B的軸分離。此外,於臂部22A的另一方的端部安裝有處理液噴嘴20。藉由此種構成,處理液噴嘴20係構成為能夠於基板W的半徑方向擺動。此外,擺動所為的處理液噴嘴20的移動方向係只要具有基板W的半徑方向的成分即可,無須嚴格地與基板W的半徑方向平行。The
處理罩杯12係具備:筒狀的防護罩(guard)12A,係俯視觀看時圍繞自轉夾具10;軸體12B,係安裝於防護罩12A;驅動部12C,係使防護罩12A升降;以及筒狀的防護罩12D,係俯視觀看時圍繞防護罩12A。The
控制部90係一邊控制自轉夾具10的自轉馬達10D的轉數,一邊從處理液噴嘴20將處理液噴出至基板W的上表面。此外,控制部90係控制噴嘴臂22的驅動部22C的驅動,藉此使處理液噴嘴20在基板W的上表面處上下動作並擺動。此外,控制部90係控制處理罩杯12的驅動部12C的驅動,藉此使防護罩12A上下動作。The
[針對基板處理裝置1的動作]
接著,參照圖4說明基板處理裝置1的動作的例子。此外,圖4係顯示基板處理裝置1的動作中的處理單元600中的動作之流程圖。
[Operation of the substrate processing apparatus 1]
Next, an example of the operation of the
索引機器人602係從裝載埠601中的承載器C將基板W搬運至基板載置部604。中心機器人603係從基板載置部604將基板W搬運至一個處理單元600。處理單元600係處理基板W。中心機器人603係從處理單元600將基板W搬運至基板載置部604。索引機器人602係從基板載置部604將基板W搬運至裝載埠601中的承載器C。The
作為處理單元600中的基板處理,首先對基板W的上表面供給藥液並進行預定的藥液處理(圖4中的步驟ST01)。之後,對基板W的上表面供給純水(亦即DIW(deionized water;去離子水))等進行清洗(rinse)處理(圖4中的步驟ST02)。再者,使基板W高速旋轉,藉此甩離純水,從而使基板W乾燥(圖4中的步驟ST03)。As the substrate processing in the
在上面所說明的基板處理中的藥液處理中,從處理液噴嘴20對被自轉夾具10保持且正在旋轉中的基板W的上表面噴出預定的處理液。從處理液噴嘴20噴出的處理液的種類、噴出量、濃度、溫度或者噴出時序等係基於記錄於記錄裝置94等的處理處方而被控制部90控制。In the liquid treatment in the substrate treatment described above, a predetermined processing liquid is sprayed from the processing
[針對成形品的構成]
接著,說明被使用於上面所說明的基板處理裝置1的構成構件的至少一部分之成形品的構成。
[Regarding the structure of the molded product]
Next, the structure of the molded product which is at least a part of the components of the
被使用於本實施形態的基板處理裝置1之成形品為氟樹脂,由四氟乙烯(C
2F
4) 以及乙烯(C
2H
4)的共聚物(亦即ETFE(ethylene-tetrafluorethylene;乙烯-四氟乙烯共聚物)樹脂)所構成。ETFE是一種與全氟烷氧基烷烴 (parfluoro alkane)(亦即PFA(tetrafluoroethylene-par fluoro alkyl vinyl ether copolymer;四氟乙烯共聚合物))同樣的熱可塑性樹脂。此外,ETFE係具有耐藥品性、絕緣性以及耐磨擦性。此外,由於ETFE不僅能夠藉由切削加工來成形,亦可藉由成形加工來成形,因此亦容易抑制製造成本。
The molded product used in the
雖然上面所說明的成形品係能夠應用於基板處理裝置1中的所有的構成,然而由於為耐磨耗性高的構件,因此尤其期望應用於伸縮軟管(bellows)構件、閥構件的膜片與閥座、被使用於基板保持之夾具銷等能夠反復地產生變形或者接近與離開此種的構件。Although the molded product described above can be applied to all components of the
圖5係顯示圖3所示的處理單元600中的處理罩杯12的構成的例子之圖。FIG. 5 is a diagram showing an example of a structure of the
處理罩杯12的軸體12B係具備:連結部85,係連結於防護罩12A的側方的端部;升降頭82,係能夠經由連結部85而與防護罩12A一起上下動作;以及伸縮軟管84,係設置成覆蓋升降頭82且能夠於Z軸方向伸縮。The
處理罩杯12的驅動部12C係具備:驅動源81,係包含水平延伸的旋轉軸81A;以及傳達機構83,係將旋轉軸81A的旋轉傳達至升降頭82,藉此使升降頭82上下動作。驅動源81係例如為馬達等,用以使旋轉軸81A旋轉。The driving
傳達機構83係具備:複數個齒條(gear rack)83A,係形成於升降頭82;以及複數個小齒輪(pinion gear)83B,係傳達旋轉軸81A的旋轉,且與齒條83A齒合。The
當驅動源81的驅動馬達使旋轉軸81A旋轉時,旋轉軸81A的前端的小齒輪83B係旋轉。小齒輪83B的旋轉係經由齒條83A傳達至升降頭82並被轉換成升降頭82的Z軸方向的直線運動。藉此,升降頭82係上下動作。接著,防護罩12A係因應升降頭82的上下動作而升降。When the driving motor of the driving
在此,伸縮軟管84能採用上面所說明的成形品,亦即能採用由ETFE所構成的氟樹脂所形成的成形品。將耐磨耗性高的上面所說明的成形品採用於伸縮軟管84,藉此能大幅度地抑制伸縮軟管84的磨耗所產生的微粒。此外,由於提升伸縮軟管84的耐磨耗性,因此能抑制伸縮軟管84隨著時間劣化從而延長伸縮軟管84的更換週期。Here, the
此外,圖3所示的噴嘴臂22的軸體22B能夠應用與上面所說明的軸體12B同樣的升降頭以及伸縮軟管。在此種情形中,伸縮軟管亦能採用上面所說明的成形品,亦即能採用由ETFE所構成的氟樹脂所形成的成形品。In addition, the
然而,由於噴嘴臂22係設置成臂部22A能夠以軸體22B作為中心擺動,因此伸縮軟管除了會產生Z軸方向中的伸縮變形之外,還會產生伴隨著XY平面中的轉動之扭轉變形。在此種情形中,例如僅應力容易集中的伸縮軟管的端部(亦即圖3所示的區域222)採用由照射了電子射線的ETFE所構成的氟樹脂,藉此能抑制電子射線的照射量並能有效率地提升成形品的耐磨耗性。However, since the
圖6係顯示圖3所示的處理單元600中的膜片閥124的構成的例子之圖。FIG. 6 is a diagram showing an example of the structure of the
膜片閥124係具備:本體部24,係形成有從流入口121至流出口122的流路23;膜片25,係作為閥體,用以將流路23打開以及關閉;活塞桿(piston rod)26,係用以驅動膜片25;以及筒體27,係將活塞桿26收容於內部。The
本體部24為氟樹脂(PTFE(polytetrafluoroethylene;聚四氟乙烯)或者PFA)製成,且於內部形成有與流入口121連通的流入路徑28。被供給至處理液噴嘴20的處理液係經由流入口121流入至流入路徑28。流入路徑28係在途中朝向膜片25彎曲成大致直角。The
此外,於本體部24的內部形成有與流出口122連通的流出路徑29。藉由流出路徑29與流入路徑28構成流路23。流出路徑29係具有與膜片25對向的入口端部,在距離該入口端部預定距離的下游側處朝向流出口122彎曲成直角。處理液係從流出路徑29經由流出口122被供給至處理液噴嘴20。In addition, an
於流出路徑29的入口端部形成有閥座30,閥座30係用以使膜片25就座。因此,流出路徑29係經由閥座30連通於流入路徑28。A
閥座30係呈筒狀(具體而言為圓筒形狀),且於前端部(亦即與膜片25對向的端部)配置有環狀的密封構件120。密封構件120係例如剖面形狀為圓形的O形環,且設置成環狀的前端緣突出至比閥座30的前端面(與膜片25對向的面)還要膜片25側,並形成用以供膜片25就座的座面。The
於筒體27中之面向本體部24之端部形成有空間31,空間31係用以容許膜片25的移動;再者,活塞桿26係被插通至與空間31連通的導引孔32。A
在活塞桿26中之配置於筒體27的內部空間之部位安裝有活塞33。於比活塞33還要本體部24側的空間34形成有面向本體部24的外表面之埠(port)35。於埠35連接有氣體供給配管14,從氣體供給配管14對空間34內供給氣體(作動用的壓縮空氣)。A
於筒體27中之與本體部24相反之側安裝有蓋部(cover)36,活塞桿26係滑動自如地插通至形成於蓋部36的內表面之圓筒狀的套筒(boss)37。以圍繞套筒37之方式於套筒37的周圍配置有壓縮螺旋彈簧38。壓縮螺旋彈簧38係將膜片25朝向本體部24側施力。收容了壓縮螺旋彈簧38的空間39係經由埠40而與大氣連通。A
膜片25係具有密封面25A,密封面25A係與閥座30的前端面對向。膜片25的中央部41係形成得較厚。於中央部41處,於中央部41中之與密封面25A相反之面形成有嵌合凹部42,嵌合凹部42係嵌合至設置於活塞桿26的前端部的固定用突部26A。中央部41係經由嵌合凹部42外嵌至固定用突部26A,中央部41係被固定於活塞桿26。膜片25的周緣部43係被固定於本體部24。因此,膜片25係隨著活塞桿26的移動而變形。The
當來自氣體供給配管14的氣體經由埠35被供給至空間34時,空間34內係升壓。接著,活塞桿26係對抗壓縮螺旋彈簧38的彈性力並移動至蓋部36側(圖6中的Z軸正方向)。伴隨著活塞桿26,膜片25的中央部41係從閥座30離開並移動至蓋部36側,藉此膜片25係變形。如此,於膜片25與閥座30(以及密封構件120)之間形成有間隙S,流路23係成為開放狀態。因此,流入路徑28內的處理液係經由間隙S流入至流出路徑29。When the gas from the
另一方面,當空間34內的空氣經由埠35排出至大氣中時,空間34內的壓力係變成大氣壓。接著,活塞桿26係藉由壓縮螺旋彈簧38的彈性力移動至本體部24側(圖6中的Z軸負方向),且膜片25亦伴隨著活塞桿26而復原至原本的形狀,密封構件120係在密著狀態下夾設於膜片25與閥座30之間,流路23係成為封閉狀態。因此,流入路徑28內的處理液係不會流入至流出路徑29。On the other hand, when the air in the
在此,膜片25能採用上面所說明的成形品,亦即能採用由ETFE所構成的氟樹脂所形成的成形品。採用耐磨耗性高的膜片25,藉此能大幅度地抑制膜片25的磨耗所產生的微粒。因此,能抑制微粒混入至處理液。此外,為了抑制微粒混入至處理液故提升處理液的潔淨性,結果能縮短在基板處理之前先進行之用以去除處理液的雜質之工序時間。因此,能夠迅速地啟動基板處理裝置。此外,由於提升膜片25的耐磨耗性,因此能抑制膜片25隨著時間劣化從而延長膜片25的更換週期。Here, the
[針對成形品的製造方法] 接著,說明本實施形態的成形品的製造方法。 [Manufacturing method for molded products] Next, the manufacturing method for molded products of this embodiment will be described.
首先,於基材上形成未交聯的氟樹脂(ETFE)的層。為了於基材上形成氟樹脂層,通常藉由浸液(dipping)法、旋轉塗布(spin coating)法或者噴塗(spray coating)法等將氟樹脂分散液(fluorine resin dispersion)塗敷至基材上並進行乾燥之方法。First, a layer of uncrosslinked fluorine resin (ETFE) is formed on the substrate. In order to form the fluorine resin layer on the substrate, a fluorine resin dispersion is usually applied to the substrate by dipping, spin coating or spray coating and then dried.
此外,藉由用以將氟樹脂(ETFE)的粉體塗料塗敷至基材上之方法,亦能將氟樹脂層形成於基材上。作為粉體塗料的塗敷方法,能例舉靜電塗裝(electrostatic coating)法或者流動浸漬法等。以容易形成均勻且較薄的塗膜之觀點來看,較佳為採用氟樹脂分散液的塗敷法。In addition, a fluororesin layer can be formed on a substrate by applying a powder coating of fluororesin (ETFE) to the substrate. Examples of the coating method of the powder coating include electrostatic coating or flow dipping. From the perspective of easily forming a uniform and thin coating film, a coating method using a fluororesin dispersion is preferred.
接著,在氧濃度為1000ppm以下的氛圍下對溫度已經被調整至適合照射的溫度之上面所說明的氟樹脂層照射例如照射劑量(irradiated dose)為50kGy以上至250kGy以下的放射線(電子射線)。藉此,使未交聯的氟樹脂交聯。Next, the fluororesin layer described above, whose temperature has been adjusted to a temperature suitable for irradiation, is irradiated with radiation (electron irradiation) at a dose of, for example, 50 kGy to 250 kGy in an atmosphere with an oxygen concentration of 1000 ppm or less, thereby crosslinking the uncrosslinked fluororesin.
作為放射線,能使用α射線(從用以進行α衰變的放射性核素釋放出的氦-4的原子核的粒子束)、β射線(從原子核釋放出的陰電子以及陽電子)、電子射線(藉由熱電子在真空中加速等所生成且具有大致固定的運動能量之電子射束)等之粒子束或者γ射線(藉由原子核、基本粒子的能級間的躍遷或者基本粒子的對湮滅與對生成等所釋放出或者所吸收的波長較短的電磁波)等之電離放射線,然而從交聯效率或者操作性的觀點來看較佳為電子射線以及γ射線,在本實施形態中使用電子射線。As radiation, particle beams such as α-rays (particle beams of helium-4 nuclei released from radioactive nuclides used to undergo α decay), β-rays (negative electrons and positive electrons released from atomic nuclei), electron rays (electron beams generated by accelerating thermal electrons in a vacuum and having a substantially constant kinetic energy), or ionizing radiation such as γ-rays (short-wavelength electromagnetic waves released or absorbed by transitions between energy levels of atomic nuclei or elementary particles or by annihilation and creation of elementary particles), can be used. However, from the perspective of crosslinking efficiency or operability, electron rays and γ-rays are preferred, and electron rays are used in this embodiment.
放射線的照射劑量係例如為50kGy以上至250kGy以下,然而從耐磨耗性的觀點來看,較佳為例如55kGy以上至230kGy以下,更佳為60kGy以上至200kGy以下。The radiation dose is, for example, 50 kGy to 250 kGy, but from the viewpoint of wear resistance, it is preferably, for example, 55 kGy to 230 kGy, and more preferably 60 kGy to 200 kGy.
將放射線的照射區域的氛圍設定在氧濃度1000ppm以下對於使交聯反應進行來說是重要的。照射區域的氛圍中的氧濃度較佳為800ppm以下,更佳為500ppm以下,再更佳為300ppm以下。氧濃度的下限值係通常為0.1ppm,大多時候為1ppm左右。It is important to set the atmosphere of the radiation irradiation area to an oxygen concentration of 1000 ppm or less in order to allow the crosslinking reaction to proceed. The oxygen concentration in the atmosphere of the irradiation area is preferably 800 ppm or less, more preferably 500 ppm or less, and even more preferably 300 ppm or less. The lower limit of the oxygen concentration is usually 0.1 ppm, and is often around 1 ppm.
藉由上面所說明的電子射線的照射,切斷ETFE中的CF鍵結與CH鍵結之中的CH鍵結,從而生成碳自由基(烷基系碳自由基、聚烯基(polyenyl)系碳自由基)。接著,在接近的碳自由基彼此處生成CC鍵結從而形成交聯。ETFE中的交聯構造係使ETFE的耐磨耗性提升。例如,聚四氟乙烯(PTFE)的界限PV值為10MPa.m/分鐘左右,未交聯的ETFE的界限PV值為100MPa.m/分鐘左右,照射電子射線之後的ETFE的界限PV值為1200MPa.m/分鐘左右。By irradiation with electron beams as described above, the C—H bonds in ETFE are cut off, thereby generating carbon radicals (alkyl carbon radicals, polyenyl carbon radicals). Then, CC bonds are generated between adjacent carbon radicals to form crosslinks. The crosslinked structure in ETFE improves the wear resistance of ETFE. For example, the critical PV value of polytetrafluoroethylene (PTFE) is about 10MPa.m/min, the critical PV value of uncrosslinked ETFE is about 100MPa.m/min, and the critical PV value of ETFE after irradiation with electron beams is about 1200MPa.m/min.
在此,上面所說明的電子射線的照射亦可僅對成形品的一部分進行。例如,亦可僅對被使用於圖3所示的軸體22B之伸縮軟管構件中的區域222照射電子射線。此外,選擇性地照射電子射線之部位並未限定於區域222般的成形品的端部之情形,亦可為其他的部位。Here, the electron ray irradiation described above may be performed only on a portion of the molded product. For example, only the
[成形品的褪色] ETFE係如上所述般藉由照射電子射線而成為交聯構造並提升耐磨耗性。另一方面,ETFE係如上所述般藉由照射電子射線而使顏色從白色朝褐色變化。 [Fading of molded products] ETFE becomes a cross-linked structure by electron ray irradiation as described above, and its wear resistance is improved. On the other hand, ETFE changes color from white to brown by electron ray irradiation as described above.
顏色朝褐色變化被認為是藉由殘存自由基進行著色。而且,產生褪色被認為是藉由浸透等去除內部的殘存自由基所致使。The color change to brown is believed to be caused by residual free radicals. Furthermore, the fading is believed to be caused by the removal of residual free radicals inside by osmosis.
當將顏色以此種方式經過變化的ETFE浸漬於預定的藥液時,能使ETFE的顏色褪色從而恢復至照射電子射線之前的顏色(白色)。When the ETFE whose color has been changed in this way is immersed in a predetermined liquid, the color of the ETFE can be faded and restored to the color (white) before irradiation with electron rays.
圖7係顯示被浸漬於預定的藥液的狀態的成形品的例子之圖。如圖7的例子所示,由ETFE所構成且已經被照射上面所說明的電子射線的成形品56係被浸漬於儲留在容器52內的預定的藥液54。Fig. 7 is a diagram showing an example of a molded product immersed in a predetermined chemical solution. As shown in the example of Fig. 7, a molded
藥液54為包含過氧化氫水之酸性的藥液,例如為鹽酸與過氧化氫水的混合溶液或者硫酸與過氧化氫水的混合溶液等。在為鹽酸與過氧化氫水的混合溶液之情形中,例如36wt%的鹽酸與30wt%的過氧化氫水與純水的比例為1:1:4,溫度為70℃。此外,在為硫酸與過氧化氫水的混合溶液之情形中,例如96wt%的鹽酸與30wt%的過氧化氫水的比例為2:1,溫度為80℃。此外,浸漬的時間係例如為幾週(四週等)左右。The
此外,用以對成形品56賦予藥液54之方法並未限定於上面所說明的浸漬,例如亦可為將液滴狀的藥液54塗敷於成形品56之情形,或者亦為可將噴霧狀的藥液54噴吹至成品形56之情形。此外,朝成形品56賦予的液體為藥液54,然而亦可使用純水(DIW)來取代藥液54。在朝成形品56賦予純水(DIW)之情形中,能使藉由照射電子射線所產生的顏色褪色。尤其,只要為經過加熱的純水(DIW),則能以比未加熱過的純水(DIW)還高的概率褪色。In addition, the method for applying the
在由ETFE所構成的成形品的顏色變化成褐色等之情形中,會產生該成形品在基板處理時等被污染之此種錯誤認知。因此,如上所述使由ETFE所構成的成形品褪色並恢復至照射電子射線之前的顏色係具有抑制此種錯誤認知之功效。結果,由於能減少因為此種錯誤認知而中斷基板處理,因此能使基板處理的處理量(throughput)提升。When the color of a molded product made of ETFE changes to brown, etc., there is a possibility of false recognition that the molded product is contaminated during substrate processing. Therefore, fading the molded product made of ETFE and restoring it to the color before electron ray irradiation as described above has the effect of suppressing such false recognition. As a result, since the interruption of substrate processing due to such false recognition can be reduced, the throughput of substrate processing can be improved.
[針對藉由以上所記載的實施形態所產生的功效] 接著,顯示藉由以上所說明的實施形態所產生的功效的例子。此外,在以下的說明中,雖然依據以上所說明的實施形態的例子所示的具體性的構成記載了該功效,然而亦可在產生同樣功效的範圍內與本發明說明書的例子所示的其他的具體性的構成置換。亦即,雖然以下為了方便說明會有僅以被賦予對應的具體性的構成中的任一者作為代表來記載之情形,然而亦可將作為代表來記載的具體性的構成置換成賦予對應的其他的具體性的構成。 [Effects produced by the above-described implementations] Next, examples of effects produced by the above-described implementations are shown. In addition, in the following description, although the effects are described based on the specific configurations shown in the above-described implementation examples, they can also be replaced with other specific configurations shown in the examples of the present invention within the scope of producing the same effects. That is, although in the following, for the sake of convenience of description, there will be a situation where only one of the corresponding specific configurations is described as a representative, the specific configuration described as a representative can also be replaced with other corresponding specific configurations.
依據以上所記載的實施形態,在成形方法中係具備下述工序:對由四氟乙烯以及乙烯的共聚物所構成的成形品56照射電子射線。According to the above-described embodiment, the molding method includes the step of irradiating the molded
依據此種構成,由於能獲得耐磨耗性高的成形品56,因此能大幅度地抑制因為成形品56的磨耗所產生的微粒。因此,在該成形品56作為構件來使用之基板處理裝置1中,能抑制微粒混入至用以處理基板W之處理液。此外,由於由四氟乙烯以及乙烯的共聚物所構成的成形品56不僅能夠藉由切削加工來成形,亦可藉由成形加工來成形,因此成形的自由度高。此外,能以比PFA、PTEF等還低的成本獲得成形品56。此外,為了抑制微粒混入至處理液故提升處理液的潔淨性,結果能縮短在基板處理之前先進行之用以去除處理液的雜質之工序時間。因此,能夠迅速地啟動基板處理裝置1。此外,由於提升成形品56的耐磨耗性,因此能抑制成形品56隨著時間劣化從而延長成形品56的更換週期。According to this structure, since a molded
此外,在於上述構成適當地追加了本發明說明書的例子所示的其他的構成之情形中,亦即在適當地追加了上述構成所未言及的本發明說明書中的其他的構成之情形中,亦能產生同樣的功效。Furthermore, in the case where other structures shown in the examples in the description of the present invention are appropriately added to the above-mentioned structures, that is, in the case where other structures in the description of the present invention that are not mentioned in the above-mentioned structures are appropriately added, the same effects can be produced.
此外,依據以上所記載的實施形態,用以對成形品56照射電子射線之工序為僅對成形品56的一部分照射電子射線之工序。依據此種構成,因應成形品56的變化的程度來選擇電子射線的照射區域,藉此能抑制電子射線的照射量並能有效率地提升成形品56的耐磨耗性。Furthermore, according to the above-described embodiment, the process of irradiating the molded
此外,依據以上所記載的實施形態,用以對成形品56照射電子射線之工序為僅對成形品56的端部照射電子射線之工序。依據此種構成,在針對形成品56產生不僅包含直線性的伸縮且亦包含扭轉的變形之情形中,對成形品56中之變形的程度容易變大(亦即應力容易集中)的端部選擇性地照射電子射線,藉此能抑制電子射線的照射量且能有效率地提升成形品56的耐磨耗性。Furthermore, according to the above-described embodiment, the process of irradiating the molded
此外,依據以上所記載的實施形態,在成形方法中具備下述工序:在照射電子射線後,將包含過氧化氫水之酸性的藥液賦予至成形品56。依據此種構成,能使藉由照射電子射線所產生的顏色褪色。因此,能抑制對顏色變化成褐色等之成形品56產生在基板處理時等被污染(金屬污染或者有機污染等)之此種錯誤認知。因此,能減少因為此種錯誤認知而中斷基板處理,因此能使基板處理的處理量提升。In addition, according to the above-described embodiment, the molding method includes the following step: after irradiating electron rays, an acidic liquid containing hydrogen peroxide is applied to the molded
此外,依據以上所記載的實施形態,用以將藥液賦予至成形品56之工序為下述工序:將鹽酸與過氧化氫水的混合溶液或者硫酸與過氧化氫水的混合溶液之藥液賦予至成形品56。依據此種構成,能以高的概率使藉由照射電子射線所產生的顏色褪色。Furthermore, according to the above-described embodiment, the step of applying the chemical solution to the molded
依據以上所記載的實施形態,成形品為被使用於基板處理裝置1的成形品56,由四氟乙烯以及乙烯的共聚物所構成且為褐色。According to the above-described embodiment, the molded product is a molded
依據此種構成,由於能獲得耐磨耗性高的成形品56,因此能大幅度地抑制因為成形品56的磨耗所產生的微粒。According to this structure, since a molded
此外,在於上述構成適當地追加了本發明說明書的例子所示的其他的構成之情形中,亦即在適當地追加了上述構成所未言及的本發明說明書中的其他的構成之情形中,亦能產生同樣的功效。Furthermore, in the case where other structures shown in the examples in the description of the present invention are appropriately added to the above-mentioned structures, that is, in the case where other structures in the description of the present invention that are not mentioned in the above-mentioned structures are appropriately added, the same effects can be produced.
[針對以上所記載的實施形態的變化例] 雖然在以上所記載的實施形態中亦會有針對各個構成要素的材質、材料、尺寸、形狀、相對性的配置關係或者實施的條件等記載之情形,然而這些所有的實施形態僅為一個例子,並非是限定性的事項。 [Variations of the above-described implementations] Although the above-described implementations may include descriptions of the materials, dimensions, shapes, relative configuration relationships, or implementation conditions of each component, all of these implementations are merely examples and are not intended to be limiting.
因此,在本發明說明書所揭示的技術的範圍內假想未顯示例子的無數個變化例以及均等物。例如包含下述情形:在將至少一個構成要素變化之情形;追加或者省略至少一個構成要素之情形。Therefore, numerous variations and equivalents not shown in the examples are contemplated within the scope of the technology disclosed in the present invention specification, including, for example, the following: the case where at least one constituent element is changed; the case where at least one constituent element is added or omitted.
此外,在以上所記載的實施形態中未特別指定地記載有材料名稱等之情形中,只要未產生矛盾則亦包含於該材料包含有其他的添加物之情形,例如於該材料包含有合金等。In addition, in the above-described embodiments, in the case where the material name is not particularly specified, the case where the material contains other additives is also included unless there is a contradiction, for example, the material contains an alloy.
1:基板處理裝置 10:自轉夾具 10A:自轉基座 10C,81A:旋轉軸 10D:自轉馬達 12:處理罩杯 12A,12D:防護罩 12B,22B:軸體 12C,22C:驅動部 14:氣體供給配管 20:處理液噴嘴 22:噴嘴臂 22A:臂部 23:流路 24:本體部 25:膜片 25A:密封面 26:活塞桿 26A:固定用突部 27:筒體 28:流入路徑 29:流出路徑 30:閥座 31,34,39:空間 32:導引孔 33:活塞 35,40:埠 36:蓋部 37:套筒 38:壓縮螺旋彈簧 41:中央部 42:嵌合凹部 43:周緣部 52:容器 54:藥液 56:成形品 81:驅動源 82:升降頭 83:傳達機構 83A:齒條 83B:小齒輪 84:伸縮軟管 85:連結部 90:控制部 91:CPU 92:ROM 93:RAM 94:記錄裝置 94P:處理程式 95:匯流排線 96:輸入部 97:顯示部 98:通訊部 120:密封構件 121:流入口 122:流出口 124:膜片閥 180:腔室 222:區域 600:處理單元 601:裝載埠 602:索引機器人 603:中心機器人 604:基板載置部 C:承載器 S:間隙 W:基板 Z1:旋轉軸線 1: Substrate processing device 10: Rotating fixture 10A: Rotating base 10C, 81A: Rotating shaft 10D: Rotating motor 12: Processing cup 12A, 12D: Protective cover 12B, 22B: Shaft 12C, 22C: Drive unit 14: Gas supply piping 20: Processing liquid nozzle 22: Nozzle arm 22A: Arm 23: Flow path 24: Body 25: Diaphragm 25A: Sealing surface 26: Piston rod 26A: Fixing protrusion 27: Cylinder 28: Inflow path 29: Outflow path 30: Valve seat 31, 34, 39: Space 32: Guide hole 33: Piston 35,40: Port 36: Cover 37: Sleeve 38: Compression coil spring 41: Central part 42: Fitting recess 43: Peripheral part 52: Container 54: Chemical solution 56: Molded product 81: Drive source 82: Lifting head 83: Transmission mechanism 83A: Gear 83B: Pinion 84: Retractable hose 85: Connecting part 90: Control part 91: CPU 92: ROM 93: RAM 94: Recording device 94P: Processing program 95: Bus cable 96: Input part 97: Display part 98: Communication unit 120: Sealing member 121: Inlet 122: Outlet 124: Diaphragm valve 180: Chamber 222: Area 600: Processing unit 601: Loading port 602: Index robot 603: Center robot 604: Substrate loading unit C: Carrier S: Gap W: Substrate Z1: Rotation axis
[圖1]係概略性地顯示實施形態的基板處理裝置的構成的例子之俯視圖。 [圖2]係顯示圖1所示的例子的控制部的構成的例子之圖。 [圖3]係顯示處理單元的構成的例子之圖。 [圖4]係顯示基板處理裝置的動作中的處理單元中的動作之流程圖。 [圖5]係顯示圖3所示的處理單元中的處理罩杯(processing cup)的構成的例子之圖。 [圖6]係顯示圖3所示的處理單元中的膜片閥(diaphragm valve)的構成的例子之圖。 [圖7]係顯示被浸漬於預定的藥液的狀態的成形品的例子之圖。 [FIG. 1] is a top view schematically showing an example of the structure of a substrate processing device of an embodiment. [FIG. 2] is a diagram showing an example of the structure of a control unit of the example shown in FIG. 1. [FIG. 3] is a diagram showing an example of the structure of a processing unit. [FIG. 4] is a flow chart showing the operation of the processing unit in the operation of the substrate processing device. [FIG. 5] is a diagram showing an example of the structure of a processing cup in the processing unit shown in FIG. 3. [FIG. 6] is a diagram showing an example of the structure of a diaphragm valve in the processing unit shown in FIG. 3. [FIG. 7] is a diagram showing an example of a molded product in a state of being immersed in a predetermined chemical solution.
10:自轉夾具 10: Self-rotating clamp
10A:自轉基座 10A: Rotating base
10C:旋轉軸 10C: Rotation axis
10D:自轉馬達 10D: Rotating motor
12:處理罩杯 12: Processing the cup
12A,12D:防護罩 12A,12D: Protective cover
12B,22B:軸體 12B, 22B: shaft
12C,22C:驅動部 12C, 22C: Drive unit
20:處理液噴嘴 20: Treatment fluid nozzle
22:噴嘴臂 22: Nozzle arm
22A:臂部 22A: Arm
90:控制部 90: Control Department
124:膜片閥 124:Diaphragm valve
222:區域 222: Area
600:處理單元 600: Processing unit
W:基板 W: Substrate
Z1:旋轉軸線 Z1: Rotation axis
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