TWI849595B - Precursor for low-k silicon-containing film deposition, deposition method of low-k silicon-containing film and semiconductor device of the same - Google Patents

Abstract

The present invention relates to a precursor for forming a low dielectric constant silicon-containing thin film, characterized in that it contains a silicon-containing compound represented by chemical formula 1, a thin film forming method using the precursor, and a semiconductor element, characterized in that it includes a low dielectric constant silicon-containing thin film manufactured by the thin film forming method.

In the chemical formula 1, R is independently a hydrogen atom, or a C ₁ -C ₆ linear, branched or cyclic alkyl group, an allyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a vinyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, an alkoxy group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a primary or secondary amine group, or a phenyl group containing a C ₁ -C ₆ functional group, and L is a linking group selected from a linear, branched or cyclic alkyl group or an aryl group.

Description

Precursor for forming a low dielectric constant silicon-containing film, method for forming a low dielectric constant silicon-containing film using the precursor, and semiconductor device containing the low dielectric constant silicon-containing film

The present invention relates to a precursor for forming a silicon-containing film, a method for forming a silicon-containing film using the precursor, and a semiconductor device containing the silicon-containing film, in particular, a precursor for forming a low dielectric constant film using a silicon-containing compound with a dialkoxide-bridged disilane structure, a method for forming a silicon-containing film using the precursor, and a semiconductor device containing the metal film.

With the miniaturization and high integration of semiconductor devices, parasitic capacitance increases and thus causes a delay in response speed (RC delay), so research and development activities aimed at solving the above problem are being actively carried out. The main reason for the formation of the parasitic capacitance is that the distance between metal wirings is too close, so the configuration between the metal wirings will form the same structure as a capacitor. In order to reduce the above phenomenon, it is necessary to use an insulating material with a low dielectric constant to form an interlayer insulating film formed between the metal parts.

The low dielectric constant insulating material can be formed by a spin-on dielectric (SOD) method and a chemical vapor deposition (hereinafter referred to as CVD) method. As relevant examples, a fluorinated silicate glass film (hereinafter referred to as FSG film) and a silicon oxycarbide (SiOC) film can be taken as examples.

As precursors currently used to form low dielectric constant films, octamethylcyclotetrasiloxane (OMCTS), diethoxymethylsilane (DEMS) and tetraethoxyorthosilicate (TEOS) can be taken as examples. The precursors are in liquid form, which is conducive to vaporization in the deposition process, but it is difficult to achieve sufficient hardness in the formed film, so its scope of application is relatively limited.

For example, in the Korean Patent Publication No. 10-2006-0029762, a contractor using SiH4 and SiF4 gases to form an insulating film uses methylethoxysilane (MTES), diethoxymethylsilane (DEMS), dimethoxymethylsilane (DMOMS), tetramethylcyclotetrasiloxane (TOMCATS), dimethyl dimethoxysilane (DMTES), and tetramethylcyclotetrasiloxane (TOMCATS). Oxysilane (DMDMOS), dimethyldioxysilylcyclohexane (DMDOSH) and trimethylsilane (Z3MS), etc. However, the organic siloxane source is only added to the precursor, which is limited in reducing the dielectric constant. Moreover, when the organic siloxane source is used as a precursor, it will also cause the problem of reduced hardness, so it is relatively limited when used in the thin film formation process.

Prior art literature

Patent Literature

Korean Patent Publication No. 10-2006-0029762

The present invention aims to solve the problems existing in the prior art as described above, and its purpose is to provide a precursor for forming a low dielectric constant silicon-containing thin film, which can easily adjust the carbon content ratio in the molecule and improve the hardness of the formed film by using a silicon-containing compound with a chemical structure that can be easily decomposed by applying energy in the film forming process.

In addition, its purpose is to provide a method for forming a low dielectric constant silicon-containing thin film by using the low dielectric constant silicon-containing thin film forming precursor.

In addition, it is an object to provide a semiconductor device comprising the low dielectric constant silicon-containing film.

In order to achieve the above-mentioned purpose, the low dielectric constant silicon-containing thin film forming precursor of the present invention is characterized in that it contains a silicon-containing compound represented by the following chemical formula 1.

In the chemical formula 1, R is independently a hydrogen atom, or a C ₁ -C ₆ linear, branched or cyclic alkyl group, an allyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a vinyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, an alkoxy group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a primary or secondary amine group, or a phenyl group containing a C ₁ -C ₆ functional group, and L is a linking group selected from a linear, branched or cyclic alkyl group or an aryl group.

Specifically, the silicon-containing compound represented by the chemical formula 1 may be a silicon-containing compound represented by any one of the following chemical formulas 2 to 4.

[Chemical formula 2]

In Chemical Formulae 2 to 4, R is each independently a hydrogen atom, or a C ₁ -C ₆ linear, branched or cyclic alkyl group, an allyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a vinyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, an alkoxy group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a primary or secondary amine group, or a phenyl group containing a C ₁ -C ₆ functional group, and n is an integer from 1 to 8.

In addition, the precursor may further contain a solvent. In this case, the solvent may be any one or more of _C1 - _C16 saturated or unsaturated hydrocarbons, ketones, ethers, ethylene glycol dimethyl ether, esters, tetrahydrofuran and tertiary amines, and may contain 1 to 99 weight % relative to the total weight of the low dielectric constant silicon-containing thin film forming precursor.

In addition, the low dielectric constant silicon-containing film forming method of the present invention includes: a step of forming a thin film on a substrate using the low dielectric constant silicon-containing film forming precursor.

In addition, the low dielectric constant silicon-containing film can be formed by a spin-on dielectric (SOD) process, a high-density plasma-chemical vapor deposition (HDPCVD) process or an atomic layer deposition (ALD) process.

In addition, it may include: a step of transferring the low dielectric constant silicon-containing film forming precursor into the interior of the chamber by direct liquid injection (DLI).

In addition, the method may include: supplying the low dielectric constant silicon-containing thin film forming precursor onto the substrate and forming a thin film by generating plasma.

In addition, the semiconductor device of the present invention can be manufactured by the low dielectric constant silicon-containing thin film formation method.

The precursor of the present invention is composed of a chemical structure that can be easily decomposed by applying energy in the film formation process. Therefore, when it is applied to the formation process of a low dielectric constant silicon-containing film, it can easily adjust the carbon content ratio in the molecule and improve the hardness of the formed film.

In addition, by using the precursor, a low dielectric constant silicon-containing film and a semiconductor device containing the low dielectric constant silicon-containing film can be manufactured.

FIG1 is a conceptual diagram illustrating the process of forming a reaction region when a precursor composed of a silicon-containing compound represented by Chemical Formula 1 is applied with plasma.

FIG. 2 is a hydrogen nuclear magnetic resonance spectrum ( ¹ H-NMR) analysis result of the silicon-containing compound according to Example 1; FIG. 3 is a hydrogen nuclear magnetic resonance spectrum ( ¹ H-NMR) analysis result of the silicon-containing compound according to Example 2; FIG. 4 is a hydrogen nuclear magnetic resonance spectrum ( ¹ H-NMR) analysis result of the silicon-containing compound according to Example 3; FIG. 5 is a hydrogen nuclear magnetic resonance spectrum ( ¹ H-NMR) analysis result of the silicon-containing compound according to Example 4; FIG. 6 is a thermogravimetric analyzer (TGA) analysis result of the silicon-containing compounds according to Examples 1 to 4.

Next, the invention will be described in more detail. The terms or words used in the specification and the scope of the invention application should not be limited to the general or dictionary meanings for interpretation, but should be based on the principle that the inventor can make appropriate definitions of the concepts of the terms in order to explain his invention in the best way, so as to make interpretations in accordance with the meaning and concepts of the technical ideas of the invention.

The low dielectric constant silicon-containing thin film forming precursor of the present invention is characterized in that it contains a silicon-containing compound represented by the following chemical formula 1.

In the chemical formula 1, R is independently a hydrogen atom, or a C ₁ -C ₆ linear, branched or cyclic alkyl group, an allyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a vinyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, an alkoxy group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a primary or secondary amine group, or a phenyl group containing a C ₁ -C ₆ functional group, and L is a linking group selected from a linear, branched or cyclic alkyl group or an aryl group.

In the silicon-containing compound represented by the chemical formula 1, since the two silane compounds are bonded in a symmetrical form, the best deposition efficiency can be obtained when used as a precursor in a thin film formation process.

Taking the case where a silicon-containing compound having a structure as shown in FIG. 1 is applied to a coating formation process as an example, since the alkoxy group connecting the two silane compounds has a low bonding energy and is prone to break-up, it will decompose into an intermediate that forms a free radical on an oxygen atom when a plasma is applied. In this way, two silicon monomers with a reaction region will be formed, thereby greatly increasing the speed of thin film formation. In addition, since the reaction region and the reaction group on the surface of the film can be airtightly bonded, the hardness of the formed film can be increased. In addition, since R in the chemical formula 1 bonds to the silicon atom, Si-C bonds will be formed in the film after being adsorbed on the film surface. Through the surface adsorption process as described above, the dielectric constant of the formed silicon-containing film can be reduced.

The linking group of the silicon-containing compound represented by the chemical formula 1 is a connection between alkoxy groups bonded to silicon atoms and has a structure that can be easily decomposed when energy is applied. As described above, it can be selected from linear, branched, cyclic alkyl or aryl groups.

Specifically, when the linking group is a linear or branched alkyl group, the silicon-containing compound represented by the chemical formula 1 may be a compound represented by the following chemical formula 2.

The definition of R is the same as that of Chemical Formula 1, n is an integer from 1 to 8, and various forms of alkyl groups can be combined between the two alkoxy groups.

In addition, when the linking group is a cyclic alkyl group, a compound having a chemical structure as shown in the following chemical formula 3 can be formed.

The definition of R is the same as that of Chemical Formula 1, n is an integer from 1 to 8, and various forms of cyclic alkyl groups can be combined between the two alkoxy groups.

In addition, when the linking group is an aromatic group, a compound having a chemical structure as shown in the following chemical formula 4 can be formed.

The definition of R is the same as that of Chemical Formula 1. In the chemical structure, when energy is irradiated, the aromatic group and oxygen can break and form free radicals. In addition, the aromatic group formed in the above manner can increase the carbon content in the film.

In addition, the precursor of the present invention may further contain a solvent. As the solvent, any one of C ₁ -C ₁₆ saturated or unsaturated hydrocarbons, ketones, ethers, ethylene glycol dimethyl ether, esters, tetrahydrofuran and tertiary amines or a mixture thereof may be used. Examples of the C ₁ -C ₁₆ saturated or unsaturated hydrocarbons include toluene and heptane, and examples of the tertiary amine include dimethylethylamine.

In particular, when the silicon-containing compound is in a solid state at room temperature, it is preferable to include a solvent that can dissolve it. That is, when the solvent is included, the amount of the solvent that can dissolve the silicon-containing compound is preferably 1 to 99% by weight relative to the total weight of the precursor for forming a silicon-containing thin film.

Since the precursor containing or not containing the solvent can be vaporized, it can be supplied to the inside of the chamber in the form of the precursor gas. Therefore, depending on the type of silicon-containing compound, when it exists in a liquid state at room temperature and can be easily vaporized, a thin film forming process can also be performed without a separate solvent.

In addition, when the silicon-containing compound is used to form a low dielectric constant silicon-containing film, the film can be formed using a spin-on dielectric (SOD) process, a high-density plasma-chemical vapor deposition (HDP-CVD) process, or an atomic layer deposition (ALD) process.

For example, when the high-density plasma chemical vapor deposition (HDP-CVD) process is applied, it can form a thin film with a dense structure and excellent mechanical properties because it can be performed under high vacuum and high power conditions compared to the atmospheric pressure chemical vapor deposition (AP-CVD) process, low pressure chemical vapor deposition (LP-CVD) process or plasma enhanced chemical vapor deposition (PE-CVD) process.

To this end, the process of forming a thin film includes: a step of transferring the low dielectric constant silicon-containing thin film forming precursor into the interior of a chamber by direct liquid injection (DLI); and a step of forming a thin film by applying plasma while supplying a source gas different from the precursor transferred into the interior of the chamber onto the substrate.

For example, by supplying the low dielectric constant silicon-containing thin film forming precursor gas, oxygen, and hydrogen as a carrier gas to a substrate formed with a metal wiring pattern and generating plasma therein, a low dielectric constant interlayer insulating film can be formed to fill the gaps between the metal wiring patterns formed on the substrate. In addition, when a silicon fluoride insulating film needs to be formed, a thin film can also be formed by simultaneously supplying a fluorine source gas.

In addition, depending on the type of interlayer insulating film, by supplying a carrier gas, i.e., hydrogen gas, to the substrate while supplying silicon source gas, fluorine source gas, oxygen gas, and carbon-containing gas to generate plasma, a low dielectric constant insulating film can be formed to fill the gaps between metal wiring patterns on the substrate.

As _the fluorine source, commonly used _SiF4 can _{be used, and as the gas containing carbon, hydrocarbon gases such as CH4, C2H4, C2H6 , C2H2 and C6H6 , or} organic siloxane source gases such as methylethoxysilane (MTES), diethoxymethylsilane (DEMS), dimethoxymethylsilane (DMOMS), tetramethylcyclotetrasiloxane ( _TOMCATS ), dimethyldimethoxysilane (DMDMOS), dimethyldioxysilylcyclohexane (DMDOSH) and trimethylsilane can be used.

The process for forming the thin film can be performed under a chamber pressure condition of 1 to 1000 mTorr. In addition, the source power for generating plasma in the chamber is preferably 500 to 9,000 W, and the bias power is preferably 0 to 5,000 W. In addition, the bias power may not be applied in some cases.

In the thin film formation process, due to the structural characteristics of the silicon-containing compound used in the present invention, fine gaps will be formed simultaneously when the interlayer insulating film is formed. By forming the gaps as described above, the dielectric constant of the interlayer insulating film can be further reduced, thereby achieving a lower dielectric constant than the current interlayer insulating film.

In addition, since the bonding force between the silicon-containing compound and the film surface can be improved, the mechanical properties of the formed film can be improved.

In addition, since the gap filling capability can be improved by the inflow of the hydrogen gas, an interlayer insulating film without void areas can be formed between the metal wirings, thereby preventing engineering defects that may be caused by the void areas.

In addition, by applying the film formation process, a semiconductor device containing a low dielectric constant silicon-containing film can be manufactured. At this time, the low dielectric constant silicon-containing film will form a fluorinated silicate glass (FSG, Fluarinated Silicate Glass) or an organic silicate glass (OSG, Organo Silicate Glass) film as an interlayer insulating film, thereby reducing the parasitic capacitor between the wiring of the semiconductor device and forming a high-quality semiconductor device.

Next, the effects of the present invention will be described with reference to the embodiments.

Example 1: Preparation of 4,4,6,7,9,9-hexamethyl-3,5,8,10-tetraoxa-4,9-disiladodecane

After cooling a solution of 200 g (1.55 mol) of dichlorodimethylsilane dissolved in 5 L of hexane to a low temperature (about 0°C), 90.4 mL (1.55 mol) of ethanol and 215 mL (1.55 mol) of triethylamine were slowly added in sequence, and then stirred at room temperature for about 6 hours. After the reactants were cooled again to a low temperature (about 0°C), a mixture of 70.7 mL (0.77 mol) of 2,3-butanediol, 259 mL (1.86 mol) of triethylamine and 1 L of hexane was added, and then stirred at room temperature for about 12 hours. The final reaction product was filtered and the filtrate was desolventized to obtain a colorless liquid. The obtained liquid was purified under reduced pressure (70°C (bath standard) @ 0.2 torr) to obtain 159.5 g of a colorless liquid, namely 4,4,6,7,9,9-hexamethyl-3,5,8,10-tetraoxa-4,9-disiladodecane (yield: 70%).

The nuclear magnetic resonance (NMR) analysis structure of the product is shown in Figure 2, and its characteristic peaks are as follows.

¹ H-NMR (C ₆ D ₆ ): δ 0.16[s,12H,-Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ], 1.15[t,J=7.0Hz,6H,meso-Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ],1.22-1.25[m,6.8H,dl -Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ and -OCH(CH ₃ )],3.65-3.72[m,4H, meso and dl -Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ],3.79-3.86[m,1.7H,meso -OCH(CH ₃ )],3.95-4.02[m,0.5H,dl -OCH(CH ₃ )]

Example 2: Preparation of 1,2-bis((ethoxydimethylsilyl)oxy)cyclohexane

After cooling a solution of 20 g (0.15 mol) of dichlorodimethylsilane dissolved in 500 mL of hexane to a low temperature (about 0°C), 9 mL (0.15 mol) of ethanol and 21.5 mL (0.15 mol) of triethylamine were slowly added in sequence, and then stirred at room temperature for about 6 hours. After the reactants were cooled again to a low temperature (about 0°C), a mixture of 8.9 g (0.07 mol) of 1,2-cyclohexanediol, 26 mL (0.18 mol) of triethylamine, and 100 mL of tetrahydrofuran was added, and then stirred at room temperature for about 12 hours. The final reaction product was filtered and the filtrate was desolventized to obtain a colorless liquid. The obtained liquid was purified under reduced pressure (100°C (bath standard) @ 0.2 torr) to obtain 13.2 g of a colorless liquid, namely 1,2-bis((ethoxydimethylsilyl)oxy)cyclohexane (yield: 53%).

The nuclear magnetic resonance (NMR) analysis structure of the product is shown in Figure 3, and its characteristic peaks are as follows.

¹ H-NMR (C ₆ D ₆ ): δ 0.21-0.24[m,12H,-Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ], 1.16-1.20[m,7.3H,-Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ],1.36-1.46[m,2.8H,cycle-(CHCH ₂ -CH ₂ )-],1.51-1.57[m,1.1H,cycle-(CHCH ₂ -CH ₂ )-] ,1.64-1.72[m,1.5H,cycle-(CHCH ₂ -CH ₂ )-],1.86-1.94[m,1.6H,cycle-(CHCH ₂ -CH ₂ )-],1.96-2.03[m,1.1H,cycle-(CHCH ₂ -CH ₂ )-],3.70-3.76[m,4.9H,cycle-(CHCH ₂ -CH ₂ )- and -Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ],3.86-3.88[m,1.1H,cycle-(CHCH ₂ -CH ₂ )-]

Example 3: Preparation of 1,4-bis((ethoxydimethylsilyl)oxy)cyclohexane

After cooling a solution of 10 g (0.08 mol) of dichlorodimethylsilane dissolved in 500 mL of hexane to a low temperature (about 0°C), 4.5 mL (0.08 mol) of ethanol and 10.8 mL (0.08 mol) of triethylamine were slowly added in sequence, and then stirred at room temperature for about 6 hours. After the reactants were cooled again to a low temperature (about 0°C), a mixture of 4.5 g (0.04 mol) of 1,4-cyclohexanediol, 11.8 mL (0.09 mol) of triethylamine, and 100 mL of tetrahydrofuran was added, and then stirred at room temperature for about 12 hours. The final reaction product was filtered and the filtrate was desolventized to obtain a colorless liquid. The obtained liquid was purified under reduced pressure (100°C (bath standard) @ 0.6 torr) to obtain 7.9 g of a colorless liquid, namely 1,4-bis((ethoxydimethylsilyl)oxy)cyclohexane (yield: 62%).

The nuclear magnetic resonance (NMR) analysis structure of the product is shown in Figure 4, and its characteristic peaks are as follows.

¹ H-NMR(C ₆ D ₆ ): δ 0.15[d,12H,J=6.0Hz -Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ],1.14[t,J=7.0Hz,5.6H,- Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ],1.46-1.55,1.91-2.00[m,4.3H,cycle-CH(CH ₂ -CH ₂ )CH-],1.91-2.00[m,4.3H, cycle-CH(CH ₂ -CH ₂ )CH-],3.67[q,3.9H,-Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ],3.82-3.89[m,2.1H,cycle-CH(CH ₂ -CH ₂ )CH-]

Example 4: Preparation of 1,2-bis((ethoxydimethylsilyl)oxy)benzene

After cooling a solution of 10 g (0.08 mol) of dichlorodimethylsilane dissolved in 500 mL of hexane to a low temperature (about 0°C), 4.5 mL (0.08 mol) of ethanol and 10.8 mL (0.08 mol) of triethylamine were slowly added in sequence, and then stirred at room temperature for about 6 hours. After the reactants were cooled again to a low temperature (about 0°C), a mixture of 4.2 g (0.04 mol) of 1,2-dihydroxybenzene, 11.8 mL (0.09 mol) of triethylamine, and 100 mL of tetrahydrofuran was added, and then stirred at room temperature for about 12 hours. The final reaction product was filtered and the filtrate was desolventized to obtain a colorless liquid. The obtained liquid was purified under reduced pressure (175°C (bath standard) @ 0.4 torr) to obtain 3.2 g of a colorless liquid, namely 1,2-bis((ethoxydimethylsilyl)oxy)benzene (yield: 25%).

The nuclear magnetic resonance (NMR) analysis structure of the product is shown in Figure 5, and its characteristic peaks are as follows.

¹ H-NMR (C ₆ D ₆ ): δ 0.26[s,12H,-Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ], 1.13[t,6.5H,J=7.0Hz,-Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ],3.74[q,4.3H,-Si(OCH ₂ CH ₃ )(CH ₃ ) ₂ ],6.79-6.83[m,2.5H,aromatic-C(CH=CH)- ],7.09-7.13[m,2.2H,aromatic-C(CH=CH)-]

In addition, the results of thermogravimetric analysis (TGA) of the compounds of Examples 1 to 4 are shown in FIG6 , and weight loss was observed in the region of 100 to 200°C. The above results confirm that deposition can be performed at a relatively low temperature.

An experimental evaluation of thin film formation by deposition process using the compounds of Examples 1 to 4 was performed as described below.

Manufacturing example

In order to perform the deposition process of the low dielectric constant silicon-containing film, a 6-inch p-type Si wafer was installed in the reaction chamber and the interior of the reaction chamber was purged with argon (Ar) gas. In a vaporizer at 120°C, the precursor was supplied to the chamber with a 400W plasma at a rate of 0.4g/min and a carrier gas of 400sccm, and the deposition rate (GPC) of the low dielectric constant silicon-containing film deposited by split deposition was measured at a process temperature of 350 to 400°C and an oxygen (O ₂ ) injection amount of 2 to 10sccm. The results are shown in Table 1 below.

The results of measuring the contents of silicon, oxygen, and carbon in the deposited thin film by X-ray photoelectron spectroscopy (XPS) analysis are shown in Table 2 below.

Table 2

In addition, the results of measuring the k value and modulus of the deposited film are shown in Table 3 below.

The results in Table 3 show that the deposited film has a low dielectric constant and exhibits high mechanical properties. This shows that a high-quality low dielectric constant film can be formed using the silicon-containing film-forming precursor of the present invention.

In the above content, the present invention is described with reference to the preferred implementation form, but the present invention is not limited to the said implementation form. Personnel with general knowledge in the technical field to which the present invention belongs can make various modifications and changes within the scope of the gist of the present invention. The above-mentioned variants and modifications should be interpreted as being included in the scope of the present invention and the attached invention application patent.

Claims (10)

A precursor for forming a low dielectric constant silicon-containing thin film comprises a silicon-containing compound represented by the following chemical formula:

In the chemical formula 1, R is independently a hydrogen atom, or a C ₁ -C ₆ linear, branched or cyclic alkyl group, an allyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a vinyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, an alkoxy group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a primary or secondary amine group, or a phenyl group containing a C ₁ -C ₆ functional group, L is a linking group selected from a linear, branched or cyclic alkyl group or an aryl group, wherein two alkoxy groups are included among the six R groups. The low dielectric constant silicon-containing thin film forming precursor as described in claim 1, wherein the silicon-containing compound represented by the chemical formula 1 is a silicon-containing compound represented by any one of the following chemical formulas 2 to 4:

[Chemical formula 3]

In the chemical formula 2 to the chemical formula 4, R is each independently a hydrogen atom, or a C ₁ -C ₆ linear, branched or cyclic alkyl group, an allyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a vinyl group containing a C ₁ -C ₆ linear, branched or cyclic functional group, an alkoxy group containing a C ₁ -C ₆ linear, branched or cyclic functional group, a primary or secondary amine group, or a phenyl group containing a C ₁ -C ₆ functional group, and n is an integer from 1 to 8. The precursor for forming a low dielectric constant silicon-containing thin film as described in claim 1 further comprises a solvent. The low dielectric constant silicon-containing film forming precursor as described in claim 3, wherein the solvent is any one or more of C ₁ -C ₁₆ saturated or unsaturated hydrocarbons, ketones, ethers, ethylene glycol dimethyl ether, esters and tertiary amines. A precursor for forming a low dielectric constant silicon-containing thin film as described in claim 3, wherein the solvent comprises 1 to 99 weight % relative to the total weight of the precursor for forming a low dielectric constant silicon-containing thin film. A method for forming a low dielectric constant silicon-containing film, comprising: forming a film on a substrate using a precursor for forming a low dielectric constant silicon-containing film as described in any one of claim 1 or claim 3. A method for forming a low dielectric constant silicon-containing film as described in claim 6, wherein the low dielectric constant silicon-containing film is formed by a spin-on dielectric (SOD) process, a high density plasma-chemical vapor deposition (HDP-CVD) process or an atomic layer deposition (ALD) process. The method for forming a low dielectric constant silicon-containing film as described in claim 6 includes the step of transferring the low dielectric constant silicon-containing film forming precursor into the interior of the chamber by direct liquid injection (DLI). The method for forming a low dielectric constant silicon-containing film as described in claim 6 includes the steps of supplying the low dielectric constant silicon-containing film forming precursor to the substrate and forming the film by generating plasma. A semiconductor device, comprising: a low dielectric constant silicon-containing film, which is manufactured by the low dielectric constant silicon-containing film formation method as described in claim 6.