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TWI848700B - Four-bandpass filter with substrate-synthesized coaxial cavity structure - Google Patents

Four-bandpass filter with substrate-synthesized coaxial cavity structure Download PDF

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TWI848700B
TWI848700B TW112117696A TW112117696A TWI848700B TW I848700 B TWI848700 B TW I848700B TW 112117696 A TW112117696 A TW 112117696A TW 112117696 A TW112117696 A TW 112117696A TW I848700 B TWI848700 B TW I848700B
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substrate
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TW202445910A (en
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何明華
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國立彰化師範大學
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Abstract

一種基板合成同軸線腔體結構之四頻帶通濾波器,包含二輸出入埠、一基板及複數接地通孔。該基板包括沿一疊合方向間隔設置的二外層、二電路層及一間隔層,並包括複數連接通孔,該等外層分別供該等輸出入埠設置,並鋪設一外接地區域,每一該電路層設置一電連接該輸出入埠的連接埠及四圍繞該連接埠的共振區域,每一該共振區域透過至少一該連接通孔電連接該外接地區域,每一該間隔層鋪設一間隔接地區域,並鏤空形成四分別對應於該等共振區域的鏤空區域。藉此,具有抗電磁干擾能力佳、成本低、技術門檻低之優點,適於產業上低成本電路用途。A four-band pass filter with a substrate-synthesized coaxial cavity structure includes two input/output ports, a substrate, and a plurality of grounding through holes. The substrate includes two outer layers, two circuit layers, and a spacer layer spaced apart in a stacking direction, and includes a plurality of connecting through holes. The outer layers are provided with the input/output ports, respectively, and are paved with an external grounding region. Each of the circuit layers is provided with a connecting port electrically connected to the input/output ports and resonance regions surrounding the connecting port. Each of the resonance regions is electrically connected to the external grounding region through at least one of the connecting through holes. Each of the spacer layers is paved with a spacer grounding region, and is hollowed out to form four hollowed-out regions corresponding to the resonance regions. Therefore, it has the advantages of good electromagnetic interference resistance, low cost, and low technical threshold, and is suitable for low-cost circuit use in the industry.

Description

基板合成同軸線腔體結構之四頻帶通濾波器Four-bandpass filter with substrate-synthesized coaxial cavity structure

本發明是有關於一種四頻帶通濾波器,特別是指一種基板合成同軸線腔體結構之四頻帶通濾波器。The present invention relates to a four-band pass filter, and in particular to a four-band pass filter with a substrate-synthesized coaxial cavity structure.

文獻1「Liu JC, Wang JW, Zeng BH, Chang DC. CPW-fed dual-mode double-square-ring resonators for quad-band filter. IEEE Microw. Wirel. Compon. Lett. 2010; 20(3): pp. 142-144」記載一種「作為四頻帶通濾波器的CPW(共面波導,英文為Coplanar Waveguide)饋電雙模雙方環共振器」,該文獻屬微帶線平面結構、且為開放性結構,故其抗電磁干擾能力較弱。該文獻所使用的共振器結構為兩組方形微帶線環,其共振頻率取決於微帶線環的尺寸與微帶線環所附帶之電場擾動結構,因此,調整帶通頻率的自由度較受限。該文獻的兩個微帶線共振環(方形微帶線環)以上下重疊的方式排列,會產生較強的耦合效應,導致電路品質因素值(Q值)下降。Reference 1 "Liu JC, Wang JW, Zeng BH, Chang DC. CPW-fed dual-mode double-square-ring resonators for quad-band filter. IEEE Microw. Wirel. Compon. Lett. 2010; 20(3): pp. 142-144" describes a "CPW (coplanar waveguide) fed dual-mode double-square-ring resonator as a quad-band pass filter". This reference is a microstrip planar structure and is an open structure, so its anti-electromagnetic interference capability is relatively weak. The resonator structure used in the document is two sets of square microstrip loops, and its resonant frequency depends on the size of the microstrip loop and the electric field perturbation structure attached to the microstrip loop. Therefore, the freedom to adjust the passband frequency is relatively limited. The two microstrip resonant loops (square microstrip loops) in the document are arranged in an overlapping manner, which will produce a strong coupling effect, resulting in a decrease in the circuit quality factor (Q value).

文獻2「Wu HW, Yang RY. A new quad-band bandpass filter using asymmetric stepped impedance resonators. IEEE Microw. Wirel. Compon. Lett. 2011; 21(4): pp. 203-205」記載一種「使用非對稱步進阻抗共振器的四頻帶通濾波器」,該結構採用四組跨階阻抗式微帶線共振器(stepped impedance microstrip resonator),過多數量之共振器彼此靠太近使得共振器之間的耦合效應過強,較難以獨立地設計濾波電路之各通帶的共振頻率。尤其跨階阻抗式微帶線共振器面積亦不小,使得整體電路面積較大。Reference 2 "Wu HW, Yang RY. A new quad-band bandpass filter using asymmetric stepped impedance resonators. IEEE Microw. Wirel. Compon. Lett. 2011; 21(4): pp. 203-205" describes a "quad-bandpass filter using asymmetric stepped impedance resonators". The structure uses four sets of stepped impedance microstrip resonators. Too many resonators are too close to each other, which makes the coupling effect between the resonators too strong, making it difficult to independently design the resonant frequency of each passband of the filter circuit. In particular, the area of the stepped impedance microstrip resonator is not small, which makes the overall circuit area larger.

因此,本發明之目的,即在提供一種可解決上述問題的基板合成同軸線腔體結構之四頻帶通濾波器。Therefore, the purpose of the present invention is to provide a four-bandpass filter with a substrate-synthesized coaxial cavity structure that can solve the above-mentioned problems.

於是,本發明基板合成同軸線腔體結構之四頻帶通濾波器,包含二輸出入埠、一基板及複數接地通孔。Therefore, the four-band pass filter of the substrate-synthesized coaxial cavity structure of the present invention includes two input and output ports, a substrate and a plurality of ground through holes.

該等輸出入埠分別用於輸入及輸出。These ports are used for input and output respectively.

該基板包括沿一疊合方向間隔設置的二外層、二電路層及一間隔層,並包括複數連接通孔,沿該疊合方向之設置順序為其中一該外層、其中一該電路層、該間隔層、其中另一該電路層,及其中另一該外層,該等外層分別供該等輸出入埠設置,且每一該外層鋪設一不連接該輸出入埠的外接地區域,每一該電路層設置一電連接鄰近之該輸出入埠的連接埠及四圍繞但不連接該連接埠的共振區域,每一該共振區域透過至少一該連接通孔電連接鄰近的該外接地區域,每一該共振區域之面積與所連接之該連接通孔的數量的組合皆不相同,每一該間隔層鋪設一間隔接地區域,並於該間隔接地區域鏤空形成四位置分別對應於該等共振區域的鏤空區域。The substrate includes two outer layers, two circuit layers and a spacer layer spaced apart along a stacking direction, and includes a plurality of connecting through holes. The arrangement order along the stacking direction is one of the outer layers, one of the circuit layers, the spacer layer, another of the circuit layers, and another of the outer layers. The outer layers are provided with the input and output ports, respectively, and each of the outer layers is provided with an external grounding area not connected to the input and output ports, and each of the circuit layers is provided with an electrical connection hole. The connection ports adjacent to the input/output ports and the resonance regions surrounding but not connected to the connection ports, each of the resonance regions is electrically connected to the adjacent external grounding region through at least one of the connection through holes, the area of each of the resonance regions and the number of the connected connection through holes are all different, each of the spacer layers is paved with a spacer grounding region, and the spacer grounding region is hollowed out to form four hollowed-out regions corresponding to the resonance regions respectively.

該等接地通孔圍繞該等共振區域設置於該基板。The grounding through holes are arranged on the substrate around the resonance regions.

本發明之功效在於:藉由上述架構,可以使用印刷電路板之結構來模擬與合成同軸線特性之共振腔體結構,且於電路外圍有嚴密的金屬包覆結構,使其抗電磁干擾能力極佳。因此,能同時具有同軸線腔體與印刷電路板電路的優良特性,而具有抗電磁干擾能力高、成本低之優點。並且,由於印刷電路板為標準之電路板製程,技術門檻低,適於產業上低成本電路用途。The effect of the present invention is that: through the above-mentioned structure, the structure of the printed circuit board can be used to simulate and synthesize the resonant cavity structure of the coaxial characteristics, and there is a strict metal coating structure around the circuit, so that it has excellent anti-electromagnetic interference ability. Therefore, it can have the excellent characteristics of the coaxial cavity and the printed circuit board circuit at the same time, and has the advantages of high anti-electromagnetic interference ability and low cost. In addition, since the printed circuit board is a standard circuit board process, the technical threshold is low, and it is suitable for low-cost circuit use in the industry.

參閱圖1~圖4,本發明基板合成同軸線腔體結構(substrate integrated coaxial cavity)之四頻帶通濾波器之一實施例,包含二輸出入埠2、一基板3,及複數接地通孔9。其中,為了圖式清楚起見,圖1中該基板3之架構以假想線繪製,並以透視方式表示該基板3內部之電路架構,且省略該等接地通孔9。圖2~圖4中所示之距離的單位為公厘(mm)。Referring to FIG. 1 to FIG. 4 , an embodiment of a substrate integrated coaxial cavity four-band pass filter of the present invention comprises two input/output ports 2, a substrate 3, and a plurality of grounding through holes 9. For the sake of clarity, the structure of the substrate 3 in FIG. 1 is drawn with imaginary lines, and the circuit structure inside the substrate 3 is shown in a perspective manner, and the grounding through holes 9 are omitted. The unit of the distance shown in FIG. 2 to FIG. 4 is millimeter (mm).

參閱圖1及圖2,該等輸出入埠2分別用於輸入及輸出,並適用於以連接一設置於該外層4的SMA插座(圖未示)的方式,供一SMA插頭(圖未示)連接而進行輸入及輸出。於本實施例中,例如以圖1上方之該輸出入埠2作為輸入埠,下方之該輸出入埠2作為輸出埠。Referring to FIG. 1 and FIG. 2 , the input/output ports 2 are used for input and output respectively, and are suitable for connecting to an SMA socket (not shown) disposed on the outer layer 4 so as to be connected to an SMA plug (not shown) for input and output. In this embodiment, for example, the input/output port 2 at the top of FIG. 1 is used as an input port, and the input/output port 2 at the bottom is used as an output port.

該基板3包括沿一疊合方向L間隔設置的二外層4、二電路層5及一間隔層6,並包括複數連接通孔7(VIA,材質例如為銅)。該基板3使用四層印刷電路板(printed circuit board,縮寫為PCB)架構實施,或是使用兩個雙層印刷電路板緊密貼緊排列。該基板3具有四個沿該疊合方向L疊置的絕緣層8。每一該外層4與鄰近之該電路層5間之該絕緣層8沿該疊合方向L上的長度例如為1.58 mm,每一該電路層5與該間隔層6間之該絕緣層8沿該疊合方向L上的長度例如為0.254 mm。沿該疊合方向L之設置順序為其中一該外層4、其中一該電路層5、該間隔層6、其中另一該電路層5,及其中另一該外層4。The substrate 3 includes two outer layers 4, two circuit layers 5 and a spacer layer 6 arranged at intervals along a stacking direction L, and includes a plurality of connecting through holes 7 (VIA, the material is, for example, copper). The substrate 3 is implemented using a four-layer printed circuit board (PCB) structure, or using two double-layer printed circuit boards arranged closely. The substrate 3 has four insulating layers 8 stacked along the stacking direction L. The length of the insulating layer 8 between each outer layer 4 and the adjacent circuit layer 5 along the stacking direction L is, for example, 1.58 mm, and the length of the insulating layer 8 between each circuit layer 5 and the spacer layer 6 along the stacking direction L is, for example, 0.254 mm. The arrangement order along the stacking direction L is one of the outer layers 4, one of the circuit layers 5, the spacer layer 6, another of the circuit layers 5, and another of the outer layers 4.

該等外層4分別供該等輸出入埠2設置,且每一該外層4鋪設一不連接該輸出入埠2且提供接地電位的外接地區域41。於本實施例中,是將該外層4表面除了該輸出入埠2與所需的間隙外,其餘區域皆鋪滿銅層作為該外接地區域41,如此,可具有較佳的抗電磁干擾能力。The outer layers 4 are provided for the input/output ports 2, respectively, and each outer layer 4 is provided with an external grounding region 41 which is not connected to the input/output port 2 and provides a ground potential. In this embodiment, the surface of the outer layer 4 is covered with a copper layer as the external grounding region 41 except for the input/output port 2 and the required gap, so that it can have a better anti-electromagnetic interference capability.

參閱圖1及圖3,每一該電路層5設置一連接埠51,及四圍繞但不連接該連接埠51的共振區域52。該連接埠51透過該連接通孔7電連接鄰近之該輸出入埠2,並透過另一該連接通孔7電連接該間隔層6。每一該共振區域52透過至少一該連接通孔7電連接鄰近的該外接地區域41。1 and 3 , each circuit layer 5 is provided with a connection port 51 and a resonance region 52 surrounding but not connected to the connection port 51. The connection port 51 is electrically connected to the adjacent input/output port 2 through the connection via 7, and is electrically connected to the spacer layer 6 through another connection via 7. Each resonance region 52 is electrically connected to the adjacent external ground region 41 through at least one connection via 7.

其中,該等共振區域52分別對應至不同的頻帶,為清楚說明起見,將該等共振區域52依對應之頻帶由低頻至高頻的順序定義為第一共振區域521、第二共振區域522、第三共振區域523、及第四共振區域524。The resonance regions 52 correspond to different frequency bands respectively. For the sake of clarity, the resonance regions 52 are defined as a first resonance region 521, a second resonance region 522, a third resonance region 523, and a fourth resonance region 524 in order from low frequency to high frequency.

每一該共振區域52之面積與所連接之該連接通孔7的數量的組合皆不相同,藉此,以調整每一該共振區域52分別對應至不同的頻帶。於該等共振區域52的面積不相等時,該等共振區域52所對應頻帶之頻率與該等共振區域52的面積呈負相關,於該等共振區域52的面積相等時,該等面積相等之共振區域52所連接之該連接通孔7的數量與該等共振區域52所對應頻帶之頻率呈正相關。於本實施例中,是設計該第一共振區域521與該第二共振區域522面積相等,該第三共振區域523面積次之,該第四共振區域524再次之。並且,除了該第一共振區域521所連接之該連接通孔7的數量為一,其餘該第二共振區域522、該第三共振區域523、及該第四共振區域524所連接之該連接通孔7的數量皆為二。其中,每一該共振區域52所連接之該連接通孔7的數量至少為一,以經由該外接地區域41提供接地電位,每一該共振區域52所連接之該連接通孔7的數量較佳是不超過三個,更佳是在兩個以內,此是由於設置較多的該連接通孔7雖可提升對應的頻率,但會導致損耗提升。The combination of the area of each resonance region 52 and the number of the connecting through holes 7 connected thereto is different, thereby adjusting each resonance region 52 to correspond to different frequency bands. When the areas of the resonance regions 52 are not equal, the frequency of the frequency band corresponding to the resonance regions 52 is negatively correlated with the area of the resonance regions 52. When the areas of the resonance regions 52 are equal, the number of the connecting through holes 7 connected to the resonance regions 52 of equal area is positively correlated with the frequency of the frequency band corresponding to the resonance regions 52. In this embodiment, the first resonance region 521 and the second resonance region 522 are designed to have equal areas, the third resonance region 523 is the second largest area, and the fourth resonance region 524 is the third largest area. In addition, except for the first resonance region 521 connected to one connection hole 7, the second resonance region 522, the third resonance region 523, and the fourth resonance region 524 are all connected to two connection holes 7. The number of connection holes 7 connected to each resonance region 52 is at least one, so as to provide a ground potential through the external ground region 41. The number of connection holes 7 connected to each resonance region 52 is preferably not more than three, and more preferably within two, because providing more connection holes 7 can increase the corresponding frequency, but will lead to increased loss.

該等共振區域52中,對應至較低頻率之兩頻帶的該第一共振區域521與該第二共振區域522分別位於該連接埠51的兩相反側,對應至較高頻率之兩頻帶的該第三共振區域523與該第四共振區域524分別位於該連接埠51的兩相反側,且夾設於對應至較低頻率之兩頻帶的該第一共振區域521與該第二共振區域522之間。Among the resonance regions 52, the first resonance region 521 and the second resonance region 522 corresponding to the two frequency bands of lower frequencies are respectively located at two opposite sides of the connection port 51, and the third resonance region 523 and the fourth resonance region 524 corresponding to the two frequency bands of higher frequencies are respectively located at two opposite sides of the connection port 51, and are sandwiched between the first resonance region 521 and the second resonance region 522 corresponding to the two frequency bands of lower frequencies.

其中,每一該共振區域52基本呈以該連接埠51為圓心的扇形,而使該等共振區域52大致呈圓形。每一該共振區域52的扇形尖端截頭呈內凹的圓弧狀。如此,使該等共振區域52與該連接埠51具有一定間隙而不連接該連接埠51。Each of the resonance regions 52 is substantially in the shape of a sector with the connection port 51 as the center, so that the resonance regions 52 are substantially in the shape of a circle. The sector tip of each of the resonance regions 52 is truncated in the shape of a concave arc. In this way, the resonance regions 52 are spaced from the connection port 51 by a certain distance and are not connected to the connection port 51.

於本實施例中,該等共振區域52之分佈方式為,定義一以該連接埠51為中心的十字線C,該等共振區域52的扇形之對稱軸分別位於該十字線C的四個線段上。但也可將呈扇形的該等共振區域52設置為沿周向上的間隔距離皆相等。In this embodiment, the distribution of the resonance regions 52 is to define a cross line C with the connection port 51 as the center, and the symmetry axes of the sectors of the resonance regions 52 are respectively located on the four line segments of the cross line C. However, the sector-shaped resonance regions 52 can also be arranged to have equal spacing distances along the circumferential direction.

其中,每一該共振區域52的半徑可以相同或不同,每一該共振區域52的角度亦可以相同或不同,並能藉由改變各別的半徑及角度以調整該共振區域52的面積。The radius of each of the resonance regions 52 may be the same or different, and the angle of each of the resonance regions 52 may also be the same or different. The area of the resonance region 52 may be adjusted by changing the respective radius and angle.

參閱圖1及圖4,每一該間隔層6鋪設一間隔接地區域61,並於該間隔接地區域61鏤空形成四位置分別對應於該等共振區域52的鏤空區域62。該間隔接地區域61的材質為銅,基本上鋪滿於該間隔層6,並透過該等接地通孔9而呈接地電位。該等鏤空區域62則是將該間隔接地區域61進行蝕刻而形成無金屬層的鏤空之區域。Referring to FIG. 1 and FIG. 4 , each of the spacer layers 6 is provided with a spacer grounding region 61, and four hollow regions 62 are formed in the spacer grounding region 61, which correspond to the resonant regions 52. The spacer grounding region 61 is made of copper, which is basically filled with the spacer layer 6, and is at ground potential through the grounding through holes 9. The hollow regions 62 are hollow regions without metal layers formed by etching the spacer grounding region 61.

該等鏤空區域62分別對應至不同的頻帶的該等共振區域52,該等鏤空區域62所對應頻帶之頻率與該等鏤空區域62的面積呈負相關。為清楚說明起見,將該等鏤空區域62依對應的該等共振區域52之頻帶由低頻至高頻的順序定義為第一鏤空區域621、第二鏤空區域622、第三鏤空區域623、及第四鏤空區域624。The hollow regions 62 correspond to the resonance regions 52 of different frequency bands, respectively, and the frequencies of the frequency bands corresponding to the hollow regions 62 are negatively correlated with the areas of the hollow regions 62. For the sake of clarity, the hollow regions 62 are defined as a first hollow region 621, a second hollow region 622, a third hollow region 623, and a fourth hollow region 624 in the order from low frequency to high frequency of the frequency bands of the corresponding resonance regions 52.

每一該共振區域52的對稱軸與對應之該鏤空區域62的對稱軸於該疊合方向L上重合。即,該第一共振區域521、該第二共振區域522、該第三共振區域523、及該第四共振區域524的對稱軸分別與該第一鏤空區域621、該第二鏤空區域622、該第三鏤空區域623、及該第四鏤空區域624的對稱軸於該疊合方向L上重合。The symmetry axis of each of the resonance regions 52 coincides with the symmetry axis of the corresponding hollow region 62 in the stacking direction L. That is, the symmetry axes of the first resonance region 521, the second resonance region 522, the third resonance region 523, and the fourth resonance region 524 coincide with the symmetry axes of the first hollow region 621, the second hollow region 622, the third hollow region 623, and the fourth hollow region 624 in the stacking direction L, respectively.

參閱圖1及圖3,每一該連接通孔7設置於所對應的該共振區域52的對稱軸上。藉此,以取得較佳的共振表現。1 and 3 , each of the connecting through holes 7 is disposed on the symmetry axis of the corresponding resonance region 52 , thereby obtaining a better resonance performance.

參閱圖1~圖4,該等接地通孔9圍繞該等共振區域52設置於該基板3。且由下方的該外層4向上延伸至上方的該外層4,而形成位於該基板3側邊外圍的方框狀的柵狀結構。1 to 4 , the grounding vias 9 are disposed on the substrate 3 around the resonance regions 52 and extend upward from the outer layer 4 below to the outer layer 4 above to form a frame-shaped grid structure located on the outer periphery of the side of the substrate 3 .

藉由上述設置,可將圖1上方的兩層電路板與下方的兩層電路板分別視為兩個基板集成同軸腔(substrate-integrated coaxial cavity),每個基板集成同軸腔中具有四個共振器,每個共振器可以看作是其中一個扇形貼片(該共振區域52)與接地端(該外接地區域41)間的並聯LC共振電路。透過改變扇形(該共振區域52)的半徑和角度,可以調整共振器的電容,而透過改變扇形所連接的該連接通孔7的數量,可以調整共振器的電感。藉此,可以容易地調整每一該共振區域52所對應的頻段。並且,請參閱圖1及圖5~圖8,圖5~圖8為分別為本實施例的該電路層5在該第一共振區域521、該第二共振區域522、該第三共振區域523、及該第四共振區域524所分別對應的第一通帶諧振頻率、第二通帶諧振頻率、第三通帶諧振頻率和第四通帶諧振頻率下的電場分佈,由圖中可以清楚看出,每一個通帶諧振頻率都僅由所對應的其中一個該共振區域52控制。也就是說,本實施例的每一該共振區域52對應的頻段是可以獨立進行調整的,不會影響到其他的該等共振區域52對應的頻段。是以,本實施例調整通帶諧振頻率的自由度高,易於調整設計。By means of the above arrangement, the two layers of circuit boards on the upper side and the two layers of circuit boards on the lower side of FIG. 1 can be respectively regarded as two substrate-integrated coaxial cavities, each of which has four resonators, and each resonator can be regarded as a parallel LC resonant circuit between one of the sector-shaped patches (the resonance region 52) and the ground end (the external ground region 41). By changing the radius and angle of the sector (the resonance region 52), the capacitance of the resonator can be adjusted, and by changing the number of the connecting through holes 7 connected to the sector, the inductance of the resonator can be adjusted. In this way, the frequency band corresponding to each of the resonance regions 52 can be easily adjusted. In addition, please refer to FIG. 1 and FIG. 5 to FIG. 8, which are electric field distributions of the circuit layer 5 of the present embodiment at the first passband resonant frequency, the second passband resonant frequency, the third passband resonant frequency and the fourth passband resonant frequency respectively corresponding to the first resonant region 521, the second resonant region 522, the third resonant region 523 and the fourth resonant region 524. It can be clearly seen from the figure that each passband resonant frequency is only controlled by the corresponding one of the resonant regions 52. In other words, the frequency band corresponding to each of the resonant regions 52 of the present embodiment can be adjusted independently without affecting the frequency bands corresponding to the other resonant regions 52. Therefore, the present embodiment has a high degree of freedom in adjusting the passband resonance frequency and is easy to adjust and design.

經由以上的說明,本實施例的功效如下:Through the above description, the effects of this embodiment are as follows:

一、藉由將該等外層4、該等電路層5及該間隔層5以電路板的架構疊合設置,並於該等電路層5設置四個該共振區域52,再搭配於該間隔層6設置四個對應的鏤空區域62,可以以印刷電路板電路實施四頻帶通濾波器。而藉由於該等外層4鋪設該等外接地區域41,及於該基板設置圍繞該等共振區域52的該等接地通孔9,則可以形成類似於同軸電纜之金屬網層的架構,達到較佳的抗電磁干擾效果。1. By stacking the outer layers 4, the circuit layers 5 and the spacer layer 5 in a circuit board structure, and providing four resonant regions 52 on the circuit layers 5, and then providing four corresponding hollow regions 62 on the spacer layer 6, a four-band pass filter can be implemented with a printed circuit board circuit. By paving the outer layers 4 with the external grounding regions 41 and providing the grounding through holes 9 surrounding the resonant regions 52 on the substrate, a metal mesh layer structure similar to a coaxial cable can be formed to achieve a better anti-electromagnetic interference effect.

由於基板合成同軸線腔體結構乃是使用印刷電路板之結構來模擬與合成同軸線特性之共振腔體結構,故同時屬於印刷電路板類的平面電路,並具有如同軸線之特性與優點。即,能以該基板3合成同軸線並以TEM模態操作,且由於電路外圍有嚴密的金屬包覆結構,使其具有極佳的抗電磁干擾能力。是以,本實施例既具有同軸線腔體與印刷電路板電路的優良特性,同時又能免除同軸線腔體與印刷電路板電路的缺點,說明如下:Since the substrate synthesized coaxial cavity structure uses the structure of a printed circuit board to simulate and synthesize the resonant cavity structure of the coaxial characteristics, it is also a planar circuit of the printed circuit board type and has the characteristics and advantages of the coaxial line. That is, the substrate 3 can be used to synthesize the coaxial line and operate in the TEM mode, and because there is a strict metal coating structure around the circuit, it has excellent anti-electromagnetic interference ability. Therefore, this embodiment has the excellent characteristics of the coaxial cavity and the printed circuit board circuit, and can avoid the shortcomings of the coaxial cavity and the printed circuit board circuit, as described below:

本實施例之優點為:因其結構為平面形式之印刷板電路結構,相較於一般同軸線腔體的複雜立體機械結構,本實施例具有適於大量生產製作,有效降低電路製作成本、電路面積小、重量輕、通帶數量多,且易與其他微波元件結合等優點,同時本實施例合成了同軸線腔體的架構與功能,相較於一般印刷電路板結構之微帶線共振電路,本實施例具有較高的功率、極優異的抗電磁干擾能力。The advantages of this embodiment are: because its structure is a planar printed circuit structure, compared with the complex three-dimensional mechanical structure of a general coaxial cavity, this embodiment has the advantages of being suitable for mass production, effectively reducing the circuit manufacturing cost, small circuit area, light weight, a large number of passbands, and easy to combine with other microwave components. At the same time, this embodiment synthesizes the structure and function of the coaxial cavity. Compared with the microstrip line resonant circuit of the general printed circuit board structure, this embodiment has higher power and excellent anti-electromagnetic interference capability.

本實施例免除的缺點為:因其結構為平面形式之印刷板電路結構,故沒有同軸線腔體的複雜立體機械結構、較高重量、較高成本與不易與其他平面電路結合等缺點,也免除了印刷電路板結構之微帶線電路的功率較小、易受外在雜訊的干擾等缺點。The disadvantages avoided by this embodiment are: because its structure is a planar printed circuit structure, it does not have the complex three-dimensional mechanical structure, high weight, high cost and difficulty in combining with other planar circuits of the coaxial cavity, and also avoids the disadvantages of the microstrip line circuit of the printed circuit board structure, such as low power and susceptibility to external noise interference.

二、藉由於該等電路層5設置四個該共振區域52,搭配於該間隔層6設置四個對應的鏤空區域62,並透過以改變該等共振區域5的面積與所連接之該連接通孔7的數量來調整對應的頻率,可以達到以較小的該共振區域52的面積、較少的該連接通孔7的數量而達到四頻帶通的設計。並且,本實施例中,每一該共振區域52對應的頻段是可以獨立進行調整的,不會影響到其他的該等共振區域52對應的頻段。是以,本實施例調整通帶諧振頻率的自由度高,具有易於調整設計頻段的優點。Second, by setting four resonant regions 52 on the circuit layers 5, and setting four corresponding hollow regions 62 on the spacer layer 6, and adjusting the corresponding frequencies by changing the areas of the resonant regions 5 and the number of the connected through holes 7, a four-band passband design can be achieved with a smaller area of the resonant region 52 and a smaller number of the connected through holes 7. Moreover, in this embodiment, the frequency band corresponding to each resonant region 52 can be adjusted independently without affecting the frequency bands corresponding to other resonant regions 52. Therefore, this embodiment has a high degree of freedom in adjusting the passband resonant frequency and has the advantage of being easy to adjust the design frequency band.

三、藉由上述整體設置,本實施例提供了具有縮小尺寸、大功率、抗電磁干擾、調整通帶諧振頻率的自由度高的四頻帶通濾波器。四個頻帶中心頻率分別為1.9、2.62、3.63與4.63 GHz,相對應的百分比頻寬(fractional bandwidth)為3.2%、2.8%、1.4%與1.7%。各通帶之通帶損耗僅約1.9、1.7、2.1與2.2 dB。3. Through the above overall configuration, this embodiment provides a four-band pass filter with reduced size, high power, anti-electromagnetic interference, and high freedom to adjust the passband resonant frequency. The four band center frequencies are 1.9, 2.62, 3.63, and 4.63 GHz, respectively, and the corresponding fractional bandwidths are 3.2%, 2.8%, 1.4%, and 1.7%. The passband loss of each passband is only about 1.9, 1.7, 2.1, and 2.2 dB.

綜上所述,本發明基板合成同軸線腔體結構之四頻帶通濾波器,確實能達成本發明的目的。In summary, the four-bandpass filter with a substrate-synthesized coaxial cavity structure of the present invention can indeed achieve the purpose of the present invention.

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above is only an example of the implementation of the present invention, and it cannot be used to limit the scope of the implementation of the present invention. All simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still within the scope of the patent of the present invention.

2:輸出入埠 3:基板 4:外層 41:外接地區域 5:電路層 51:連接埠 52:共振區域 521:第一共振區域 522:第二共振區域 523:第三共振區域 524:第四共振區域 6:間隔層 61:間隔接地區域 62:鏤空區域 621:第一鏤空區域 622:第二鏤空區域 623:第三鏤空區域 624:第四鏤空區域 7:連接通孔 8:絕緣層 9:接地通孔 L:疊合方向 C:十字線 2: Input/output port 3: Substrate 4: External layer 41: External ground area 5: Circuit layer 51: Connection port 52: Resonance area 521: First resonance area 522: Second resonance area 523: Third resonance area 524: Fourth resonance area 6: Spacer layer 61: Spacer ground area 62: Hollow area 621: First hollow area 622: Second hollow area 623: Third hollow area 624: Fourth hollow area 7: Connection via 8: Insulation layer 9: Ground via L: Stacking direction C: Cross line

本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是本發明基板合成同軸線腔體結構之四頻帶通濾波器的一實施例的一立體示意圖; 圖2是該實施例的一外層的示意圖; 圖3是該實施例的一電路層的示意圖; 圖4是該實施例的一間隔層的示意圖;及 圖5~圖8分別是該實施例的該電路層在第一通帶諧振頻率、第二通帶諧振頻率、第三通帶諧振頻率和第四通帶諧振頻率下的電場分佈。 Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: FIG. 1 is a three-dimensional schematic diagram of an embodiment of a four-band pass filter of a substrate-synthesized coaxial cavity structure of the present invention; FIG. 2 is a schematic diagram of an outer layer of the embodiment; FIG. 3 is a schematic diagram of a circuit layer of the embodiment; FIG. 4 is a schematic diagram of a spacer layer of the embodiment; and FIG. 5 to FIG. 8 are respectively the electric field distribution of the circuit layer of the embodiment at the first passband resonant frequency, the second passband resonant frequency, the third passband resonant frequency and the fourth passband resonant frequency.

2:輸出入埠 2: Input and output ports

3:基板 3: Substrate

4:外層 4: Outer layer

41:外接地區域 41: External ground area

5:電路層 5: Circuit layer

51:連接埠 51:Port

52:共振區域 52: Resonance region

521:第一共振區域 521: First resonance region

522:第二共振區域 522: Second resonance region

523:第三共振區域 523: The third resonance region

524:第四共振區域 524: The fourth resonance region

6:間隔層 6: Interlayer

61:間隔接地區域 61: Interval grounding area

62:鏤空區域 62: Hollowed-out area

621:第一鏤空區域 621: The first hollowed-out area

622:第二鏤空區域 622: The second hollowed-out area

623:第三鏤空區域 623: The third hollowed-out area

624:第四鏤空區域 624: The fourth hollowed-out area

7:連接通孔 7: Connecting through hole

8:絕緣層 8: Insulating layer

L:疊合方向 L: Overlapping direction

Claims (9)

一種基板合成同軸線腔體結構之四頻帶通濾波器,包含: 二輸出入埠,分別用於輸入及輸出; 一基板,包括沿一疊合方向間隔設置的二外層、二電路層及一間隔層,並包括複數連接通孔,沿該疊合方向之設置順序為其中一該外層、其中一該電路層、該間隔層、其中另一該電路層,及其中另一該外層,該等外層分別供該等輸出入埠設置,且每一該外層鋪設一不連接該輸出入埠的外接地區域,每一該電路層設置一電連接鄰近之該輸出入埠的連接埠及四圍繞但不連接該連接埠的共振區域,每一該共振區域透過至少一該連接通孔電連接鄰近的該外接地區域,每一該共振區域之面積與所連接之該連接通孔的數量的組合皆不相同,每一該間隔層鋪設一間隔接地區域,並於該間隔接地區域鏤空形成四位置分別對應於該等共振區域的鏤空區域;及 複數接地通孔,圍繞該等共振區域設置於該基板。 A four-band pass filter with a substrate-synthesized coaxial cavity structure comprises: Two input/output ports, used for input and output respectively; A substrate, comprising two outer layers, two circuit layers and a spacing layer spaced along a stacking direction, and comprising a plurality of connecting through holes, wherein the arrangement sequence along the stacking direction is one of the outer layers, one of the circuit layers, the spacing layer, another of the circuit layers, and another of the outer layers, wherein the outer layers are respectively provided with the input/output ports, and each of the outer layers is provided with an external grounding area not connected to the input/output ports, and each of the circuit layers is provided with an electrical connection through hole. A connection port connected to the adjacent input/output port and four resonant regions surrounding but not connected to the connection port, each of the resonant regions is electrically connected to the adjacent external grounding region through at least one of the connecting through holes, the area of each of the resonant regions and the number of the connected connecting through holes are different, each of the spacer layers is paved with a spacer grounding region, and the spacer grounding region is hollowed out to form four hollowed-out regions corresponding to the resonant regions; and a plurality of grounding through holes are arranged on the substrate around the resonant regions. 如請求項1所述的基板合成同軸線腔體結構之四頻帶通濾波器,其中,該等共振區域分別對應至不同的頻帶,於該等共振區域的面積不相等時,該等共振區域所對應頻帶之頻率與該等共振區域的面積呈負相關,於該等共振區域的面積相等時,該等面積相等之共振區域所連接之該連接通孔的數量與該等共振區域所對應頻帶之頻率呈正相關。A four-band pass filter with a substrate-synthesized coaxial cavity structure as described in claim 1, wherein the resonant regions correspond to different frequency bands respectively, and when the areas of the resonant regions are unequal, the frequencies of the frequency bands corresponding to the resonant regions are negatively correlated with the areas of the resonant regions, and when the areas of the resonant regions are equal, the number of connecting through holes connecting the resonant regions of equal area is positively correlated with the frequencies of the frequency bands corresponding to the resonant regions. 如請求項1所述的基板合成同軸線腔體結構之四頻帶通濾波器,其中,該等鏤空區域分別對應至不同的頻帶的該等共振區域,該等鏤空區域所對應頻帶之頻率與該等鏤空區域的面積呈負相關。A four-band pass filter with a substrate-synthesized coaxial cavity structure as described in claim 1, wherein the hollow regions correspond to the resonant regions of different frequency bands respectively, and the frequencies of the frequency bands corresponding to the hollow regions are negatively correlated with the areas of the hollow regions. 如請求項1所述的基板合成同軸線腔體結構之四頻帶通濾波器,其中,每一該共振區域基本呈以該連接埠為圓心的扇形,且扇形尖端截頭而不連接該連接埠。A four-bandpass filter with a substrate-synthesized coaxial cavity structure as described in claim 1, wherein each of the resonance regions is substantially fan-shaped with the connection port as the center, and the fan-shaped tip is truncated and not connected to the connection port. 如請求項4所述的基板合成同軸線腔體結構之四頻帶通濾波器,其中,定義一以該連接埠為中心的十字線,該等共振區域的扇形之對稱軸分別位於該十字線的四個線段上。A four-bandpass filter with a substrate-synthesized coaxial cavity structure as described in claim 4, wherein a cross line centered on the connection port is defined, and the symmetry axes of the sectors of the resonance regions are respectively located on four line segments of the cross line. 如請求項4所述的基板合成同軸線腔體結構之四頻帶通濾波器,其中,呈扇形的該等共振區域沿周向上的間隔距離皆相等。A four-bandpass filter with a substrate-synthesized coaxial cavity structure as described in claim 4, wherein the spacing distances between the fan-shaped resonance regions along the circumferential direction are equal. 如請求項4所述的基板合成同軸線腔體結構之四頻帶通濾波器,其中,該等共振區域分別對應至不同的頻帶,對應至較低頻率之兩頻帶的該等共振區域位於該連接埠的兩相反側,對應至較高頻率之兩頻帶的該等共振區域位於該連接埠的兩相反側且夾設於對應至較低頻率之兩頻帶的該等共振區域之間。A four-bandpass filter with a substrate-synthesized coaxial cavity structure as described in claim 4, wherein the resonance regions correspond to different frequency bands respectively, the resonance regions corresponding to the two lower frequency bands are located on opposite sides of the connection port, and the resonance regions corresponding to the two higher frequency bands are located on opposite sides of the connection port and sandwiched between the resonance regions corresponding to the two lower frequency bands. 如請求項1所述的基板合成同軸線腔體結構之四頻帶通濾波器,其中,每一該連接通孔設置於所對應的該共振區域的對稱軸上。A four-bandpass filter with a substrate-synthesized coaxial cavity structure as described in claim 1, wherein each of the connecting through holes is arranged on the symmetry axis of the corresponding resonance region. 如請求項1所述的基板合成同軸線腔體結構之四頻帶通濾波器,其中,每一該共振區域的對稱軸與對應之該鏤空區域的對稱軸於該疊合方向上重合。A four-bandpass filter with a substrate-synthesized coaxial cavity structure as described in claim 1, wherein the symmetry axis of each of the resonance regions coincides with the symmetry axis of the corresponding hollow region in the overlapping direction.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108428974A (en) * 2017-02-03 2018-08-21 Tdk株式会社 Bandpass filter
CN110034359A (en) * 2017-12-26 2019-07-19 Tdk株式会社 Bandpass filter
TWI741840B (en) * 2019-12-09 2021-10-01 日商村田製作所股份有限公司 Dielectric waveguide filter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108428974A (en) * 2017-02-03 2018-08-21 Tdk株式会社 Bandpass filter
CN110034359A (en) * 2017-12-26 2019-07-19 Tdk株式会社 Bandpass filter
CN110034359B (en) 2017-12-26 2021-04-16 Tdk株式会社 bandpass filter
TWI741840B (en) * 2019-12-09 2021-10-01 日商村田製作所股份有限公司 Dielectric waveguide filter

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