TWI848682B - Display element and display device - Google Patents
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Abstract
Description
本揭示內容是關於具有封裝結構的顯示元件以及包含此顯示元件的顯示裝置。The present disclosure relates to a display element having a packaging structure and a display device including the display element.
發光二極體顯示面板包括驅動線路板及在驅動線路板上的多個發光二極體元件。繼承發光二極體的特性,發光二極體顯示面板具有省電、高效率、高亮度及反應時間快等優點。The LED display panel includes a driving circuit board and a plurality of LED components on the driving circuit board. Inheriting the characteristics of LEDs, the LED display panel has the advantages of power saving, high efficiency, high brightness and fast response time.
在發光二極體顯示面板的製造製程中,需將多個發光二極體元件設置在驅動線路板上,並且進行封裝。然而,目前仍待提升發光二極體顯示面板的製造製程的良率。In the manufacturing process of LED display panels, multiple LED components need to be placed on a driving circuit board and packaged. However, the yield of the manufacturing process of LED display panels still needs to be improved.
本揭示內容的一些實施方式提供了一種顯示元件,包含:接收板、第一線路層、第二線路層、多個發光元件、以及封裝膠層。接收板包含絕緣層和多個貫孔。所述貫孔貫穿接收板之相對的上表面及下表面。接收板的絕緣層具有第一熱膨脹係數。第一線路層設置於接收板之下表面,且第一線路層具有多個相分離的第一電極。第二線路層設置於接收板之上表面,且第二線路層具有多個相分離的第二電極,各該第二電極經由所對應的各該貫孔連接各該第一電極。多個發光元件設置於接收板及第二線路層上方,各該發光元件的二部份分別電性連接於所對應的兩相鄰的該些第二電極。封裝膠層覆蓋於接收板、第二線路層及該些發光元件上方,且封裝膠層具有第二熱膨脹係數,封裝膠層的第二熱膨脹係數小於接收板的絕緣層的第一熱膨脹係數。Some embodiments of the present disclosure provide a display element, comprising: a receiving board, a first circuit layer, a second circuit layer, a plurality of light-emitting elements, and a packaging adhesive layer. The receiving board comprises an insulating layer and a plurality of through holes. The through holes penetrate the upper and lower surfaces opposite to each other of the receiving board. The insulating layer of the receiving board has a first thermal expansion coefficient. The first circuit layer is disposed on the lower surface of the receiving board, and the first circuit layer has a plurality of separated first electrodes. The second circuit layer is disposed on the upper surface of the receiving board, and the second circuit layer has a plurality of separated second electrodes, and each of the second electrodes is connected to each of the first electrodes through each of the corresponding through holes. A plurality of light-emitting elements are arranged on the receiving board and the second circuit layer, and two parts of each light-emitting element are electrically connected to two corresponding adjacent second electrodes. A packaging glue layer covers the receiving board, the second circuit layer and the light-emitting elements, and the packaging glue layer has a second thermal expansion coefficient, which is smaller than the first thermal expansion coefficient of the insulating layer of the receiving board.
在一些實施方式中,在顯示元件中,第二熱膨脹係數與第一熱膨脹係數的比值小於或等於約0.8且大於0。In some embodiments, in the display element, a ratio of the second thermal expansion coefficient to the first thermal expansion coefficient is less than or equal to approximately 0.8 and greater than 0.
在一些實施方式中,在顯示元件中,封裝膠層的楊氏模數在約0.1MPa至約10GPa的範圍內。In some embodiments, in a display device, the Young's modulus of the encapsulation adhesive layer is in a range of about 0.1 MPa to about 10 GPa.
在一些實施方式中,在顯示元件中,接收板的絕緣層的第一熱膨脹係數的範圍為約30 ppm/℃至約70 ppm/℃。In some embodiments, in the display device, the first thermal expansion coefficient of the insulating layer of the receiving plate ranges from about 30 ppm/°C to about 70 ppm/°C.
在一些實施方式中,在顯示元件中,接收板的絕緣層包含聚醯亞胺(Polyimide, PI)、苯並環丁烯(Benzocyclobutene, BCB)、聚苯並噁唑(Polybenzoxazole, PBO)、Su-8負型光阻、或WPR光阻其中至少一者。In some embodiments, in the display device, the insulating layer of the receiving plate includes at least one of polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO), Su-8 negative photoresist, or WPR photoresist.
在一些實施方式中,在顯示元件中,封裝膠層的第二熱膨脹係數的範圍為約1 ppm/℃至約65 ppm/℃。In some embodiments, in the display device, the second thermal expansion coefficient of the encapsulation glue layer ranges from about 1 ppm/°C to about 65 ppm/°C.
在一些實施方式中,在顯示元件中,封裝膠層的第二熱膨脹係數的範圍為約10 ppm/℃至約40 ppm/℃。In some embodiments, in the display device, the second thermal expansion coefficient of the encapsulation glue layer ranges from about 10 ppm/°C to about 40 ppm/°C.
在一些實施方式中,在顯示元件中,封裝膠層包含矽利康(silicone)或環氧樹脂(Epoxy)。In some implementations, in the display device, the encapsulation adhesive layer includes silicone or epoxy.
在一些實施方式中,在顯示元件中,封裝膠層包含無機填充材料。In some embodiments, in the display device, the encapsulation glue layer contains an inorganic filling material.
本揭示內容的一些實施方式提供了一種顯示裝置,包含:支撐板以及顯示元件。支撐板包含多個接墊及多個與該些接墊對應且電性連接的電路。顯示元件為以上和以下的多個實施方式所述的顯示元件,其中各該顯示元件的該些第一電極分別電性連接於支撐板的所對應的該些接墊。Some embodiments of the present disclosure provide a display device, comprising: a support plate and a display element. The support plate comprises a plurality of pads and a plurality of circuits corresponding to and electrically connected to the pads. The display element is the display element described in the above and below embodiments, wherein the first electrodes of each display element are electrically connected to the corresponding pads of the support plate.
在一些實施方式中,在顯示裝置中,該些顯示元件之間存在一間隔,且該些間隔被一填充材所填充。In some implementations, in the display device, there is a gap between the display elements, and the gap is filled with a filling material.
在一些實施方式中,在顯示裝置中,此填充材的材料相同或不同於該封裝膠層的材料。In some implementations, in the display device, the material of the filling material is the same as or different from the material of the encapsulation glue layer.
在一些實施方式中,在顯示裝置中,各該電路包含驅動元件、切換元件、線路、二極體、電阻或電容其中至少一者。In some implementations, in the display device, each of the circuits includes at least one of a driving element, a switching element, a line, a diode, a resistor, or a capacitor.
本揭示內容的一些實施方式提供了一種顯示裝置,包含:支撐板、多個顯示元件、以及封裝膠層。支撐板包含多個接墊及多個與該些接墊對應且電性連接的電路。多個顯示元件,設置於該支撐板上,且兩相鄰的該些顯示元件之間存在一間隔,各該顯示元件包含:接收板、第一線路層、第二線路層、和多個發光元件。接收板包含絕緣層及多個貫孔。所述貫孔貫穿接收板之相對的上表面及下表面。接收板的絕緣層具有第一熱膨脹係數。第一線路層設置於接收板之下表面,且第一線路層具有多個相分離的第一電極。第二線路層設置於接收板之上表面,且第二線路層具有多個相分離的第二電極。各該第二電極經由所對應的各該貫孔連接各該第一電極。多個發光元件設置於接收板及第二線路層上方。各該發光元件的二部份分別電性連接於所對應的兩相鄰的該些第二電極。封裝膠層覆蓋於接收板、支撐板、第二線路層及該些發光元件上並填充於該些間隔,且封裝膠層具有第二熱膨脹係數,封裝膠層的第二熱膨脹係數小於接收板的絕緣層的第一熱膨脹係數。各該顯示元件的該些第一電極分別電性連接於支撐板的所對應的該些接墊。Some embodiments of the present disclosure provide a display device, comprising: a support plate, a plurality of display elements, and a packaging adhesive layer. The support plate comprises a plurality of pads and a plurality of circuits corresponding to and electrically connected to the pads. A plurality of display elements are disposed on the support plate, and there is a gap between two adjacent display elements, and each of the display elements comprises: a receiving plate, a first circuit layer, a second circuit layer, and a plurality of light-emitting elements. The receiving plate comprises an insulating layer and a plurality of through holes. The through holes penetrate the opposite upper and lower surfaces of the receiving plate. The insulating layer of the receiving plate has a first thermal expansion coefficient. The first circuit layer is disposed on the lower surface of the receiving plate, and the first circuit layer has a plurality of separated first electrodes. The second circuit layer is arranged on the upper surface of the receiving board, and the second circuit layer has a plurality of separated second electrodes. Each of the second electrodes is connected to each of the first electrodes through the corresponding through holes. A plurality of light-emitting elements are arranged on the receiving board and the second circuit layer. Two parts of each of the light-emitting elements are electrically connected to the corresponding two adjacent second electrodes. The packaging rubber layer covers the receiving board, the supporting board, the second circuit layer and the light-emitting elements and fills the spaces, and the packaging rubber layer has a second thermal expansion coefficient, and the second thermal expansion coefficient of the packaging rubber layer is less than the first thermal expansion coefficient of the insulating layer of the receiving board. The first electrodes of each display element are electrically connected to the corresponding pads of the supporting plate.
在一些實施方式中,在顯示裝置中,第二熱膨脹係數與第一熱膨脹係數的比值小於或等於約0.8且大於0。In some embodiments, in the display device, a ratio of the second thermal expansion coefficient to the first thermal expansion coefficient is less than or equal to approximately 0.8 and greater than 0.
在一些實施方式中,在顯示裝置中,接收板的絕緣層包含聚醯亞胺(PI)、苯並環丁烯(BCB)、聚苯並噁唑(PBO)、Su-8負型光阻、或WPR光阻其中至少一者。In some embodiments, in a display device, the insulating layer of the receiving plate includes at least one of polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO), Su-8 negative photoresist, or WPR photoresist.
在一些實施方式中,在顯示裝置中,封裝膠層包含矽利康(silicone)或環氧樹脂(Epoxy)。In some implementations, in the display device, the encapsulation adhesive layer includes silicone or epoxy.
在一些實施方式中,在顯示裝置中,封裝膠層包含無機填充材料。In some implementations, in a display device, the encapsulation layer includes an inorganic filling material.
在一些實施方式中,在顯示裝置中,各該電路包含驅動元件、切換元件、線路、二極體、電阻或電容其中至少一者。In some implementations, in the display device, each of the circuits includes at least one of a driving element, a switching element, a line, a diode, a resistor, or a capacitor.
以下將以圖式及詳細描述以清楚說明本揭示內容之精神,任何所屬技術領域中具有通常知識者在瞭解本揭示內容之較佳實施方式和實施例後,當可由本揭示內容所教示之技術,加以改變及修飾,其並不脫離本揭示內容之精神與範圍。The following diagrams and detailed descriptions are used to clearly illustrate the spirit of the present disclosure. After understanding the best implementation methods and embodiments of the present disclosure, any person with ordinary knowledge in the relevant technical field can make changes and modifications based on the techniques taught by the present disclosure without departing from the spirit and scope of the present disclosure.
在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」或「耦合」係可為二元件間存在其它元件。Throughout the specification, the same reference numerals represent the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to another element, or intermediate elements may also exist. As used herein, "connected" can refer to physical and/or electrical connections. Furthermore, "electrically connected" or "coupled" can mean the presence of other elements between two elements.
應當理解,儘管術語「第一」、「第二」、「第三」等在本文中可以用於描述各種元件、組件、區域、或層,但是這些元件、組件、區域、或層不應受這些術語的限制。這些術語僅用於將一個元件、組件、區域、或層與另一個元件、組件、區域、或層區分開。因此,下面討論的「第一」元件、組件、區域、或層可以被稱為「第二」元件、組件、區域、或層而不脫離本文的教導。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, or layers, these elements, components, regions, or layers should not be limited by these terms. These terms are only used to distinguish one element, component, region, or layer from another element, component, region, or layer. Therefore, the "first" element, component, region, or layer discussed below can be referred to as the "second" element, component, region, or layer without departing from the teachings of this article.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as shown in the figures. It should be understood that the relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on the "upper" side of the other elements.
本文參考作為理想化實施例的俯視示意圖來描述示例性實施例。因此,可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此,本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀,而是包括例如由製造導致的形狀偏差。例如,示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外,所示的銳角可以是圓的。因此,圖中所示的區域本質上是示意性的,並且它們的形狀不是旨在示出區域的精確形狀,並且不是旨在限制請求項的範圍。Exemplary embodiments are described herein with reference to schematic top views that are idealized embodiments. Therefore, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and/or tolerances are to be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but rather include shape deviations that result, for example, from manufacturing. For example, a region shown or described as flat may typically have rough and/or nonlinear features. In addition, sharp corners that are shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the exact shape of the regions and are not intended to limit the scope of the claims.
在本揭示內容的一些實施方式中,形成包含多個發光元件晶粒的顯示元件,此顯示元件具有接收板、線路層、以及封裝膠層,其中接收板不包含例如驅動元件的主動元件。在本文中,顯示元件亦可稱為顯示組件。In some embodiments of the present disclosure, a display element including a plurality of light-emitting element dies is formed, wherein the display element has a receiving board, a circuit layer, and a packaging glue layer, wherein the receiving board does not include active elements such as driving elements. In this article, the display element may also be referred to as a display assembly.
在本揭示內容的一些實施方式中,形成顯示裝置,顯示裝置包含支撐板及多個顯示元件,支撐板中具有接墊及例如驅動元件的主動元件,多個顯示元件分別與對應的接墊連接,並且經由驅動元件來控制顯示元件中的對應的發光元件。In some embodiments of the present disclosure, a display device is formed, which includes a support plate and multiple display elements. The support plate has pads and active elements such as driving elements. The multiple display elements are respectively connected to corresponding pads, and the corresponding light-emitting elements in the display elements are controlled by the driving elements.
在本揭示內容的一些實施方式中,將多個發光元件晶粒轉置於一接收板並且進行封裝,形成包含多個發光元件晶粒的一封裝結構,並且將多個這樣的封裝結構設置於包含接墊及驅動電路和其他線路的支撐板上。在另一些實施方式中,將多個發光元件晶粒轉置於一接收板,之後將多個接收板設置於包含接墊及驅動電路和其他線路的支撐板上,再設置封裝膠層以形成封裝。In some embodiments of the present disclosure, a plurality of light-emitting device dies are transferred to a receiving board and packaged to form a package structure including a plurality of light-emitting device dies, and a plurality of such package structures are placed on a support board including pads, driving circuits and other lines. In other embodiments, a plurality of light-emitting device dies are transferred to a receiving board, and then a plurality of receiving boards are placed on a support board including pads, driving circuits and other lines, and then a packaging glue layer is placed to form a package.
參見第1A圖和第1B圖,分別繪示根據一些實施方式的顯示元件和顯示裝置的上視圖。顯示元件100包含多個像素單元110呈陣列排列且設置於接收板130中,其中各個像素單元110可包含一或多個子像素(未繪示)。1A and 1B , which respectively illustrate top views of a display element and a display device according to some embodiments. The display element 100 includes a plurality of pixel units 110 arranged in an array and disposed in a receiving plate 130 , wherein each pixel unit 110 may include one or more sub-pixels (not shown).
如在第1B圖中所示,顯示裝置200包含多個顯示元件100呈矩陣排列,且設置在支撐板210中。其中相鄰的多個顯示元件100之間經由一間隔120而隔開。As shown in FIG. 1B , the display device 200 includes a plurality of display elements 100 arranged in a matrix and disposed in a support plate 210 . Adjacent display elements 100 are separated by a spacer 120 .
第2A圖繪示顯示元件的截面視圖。顯示元件100包含接收板130、第一線路層140、第二線路層150、發光元件160、以及封裝膠層170。FIG2A shows a cross-sectional view of the display device 100. The display device 100 includes a receiving board 130, a first circuit layer 140, a second circuit layer 150, a light emitting device 160, and a packaging glue layer 170.
接收板130包含絕緣層132及多個貫孔134,貫孔134貫穿接收板130的相對的下表面136和上表面138。The receiving plate 130 includes an insulating layer 132 and a plurality of through holes 134 , and the through holes 134 penetrate through the opposite lower surface 136 and upper surface 138 of the receiving plate 130 .
在一些實施方式中,接收板130的材料可包含聚醯亞胺(PI)、苯並環丁烯(BCB)、聚苯並噁唑(PBO)、Su-8負型光阻、或WPR光阻(JSR公司的WPR系列)中的至少一者。In some embodiments, the material of the receiving plate 130 may include at least one of polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO), Su-8 negative photoresist, or WPR photoresist (WPR series of JSR Corporation).
第一線路層140設置於接收板130的下表面136,並且第一線路層140具有多個相分離的第一電極142。第2B圖繪示第一線路層140的上視圖,示出了根據一些實施方式在一像素單元110中在第一線路層140的多個第一電極142的排列。The first circuit layer 140 is disposed on the lower surface 136 of the receiving plate 130, and the first circuit layer 140 has a plurality of separated first electrodes 142. FIG. 2B is a top view of the first circuit layer 140, showing the arrangement of the plurality of first electrodes 142 in the first circuit layer 140 in a pixel unit 110 according to some embodiments.
第二線路層150設置於接收板130的上表面138,第二線路層150具有多個相分離的第二電極152。各個第二電極152經由所對應的各該貫孔134連接對應的第一電極142。第2C圖繪示第二線路層150的上視圖,示出了根據一些實施方式在一像素單元110中在第二線路層150中的多個第二電極152的排列。The second circuit layer 150 is disposed on the upper surface 138 of the receiving plate 130, and the second circuit layer 150 has a plurality of separated second electrodes 152. Each second electrode 152 is connected to the corresponding first electrode 142 via the corresponding through hole 134. FIG. 2C is a top view of the second circuit layer 150, showing the arrangement of the plurality of second electrodes 152 in the second circuit layer 150 in a pixel unit 110 according to some embodiments.
貫孔134、第一線路層140、和第二線路層150的材料包含導電性良好的金屬,例如銅、銀、金、鉑、鉻、鈦、鋁、鎳、類似者、或其組合。The materials of the via 134, the first wiring layer 140, and the second wiring layer 150 include metals with good electrical conductivity, such as copper, silver, gold, platinum, chromium, titanium, aluminum, nickel, the like, or a combination thereof.
如在第2A圖中所示,發光元件160設置於接收板130及第二線路層150上方。發光元件160的第一部份162A和第二部份162B分別電性連接於所對應的兩相鄰的第二電極152。第一部份162A和第二部份162B中的其中一者是發光元件160的陽極,另一者是發光元件160的陰極。As shown in FIG. 2A , the light emitting element 160 is disposed above the receiving plate 130 and the second circuit layer 150. The first portion 162A and the second portion 162B of the light emitting element 160 are electrically connected to two corresponding adjacent second electrodes 152. One of the first portion 162A and the second portion 162B is the anode of the light emitting element 160, and the other is the cathode of the light emitting element 160.
在一些實施方式中,在一像素單元110中的發光元件160可為多色或是同色。在一些實施方式中,在一像素單元110中的多個發光元件160為多色,例如紅色發光元件、綠色發光元件、和藍色發光元件。In some embodiments, the light emitting elements 160 in a pixel unit 110 may be multi-colored or of the same color. In some embodiments, the light emitting elements 160 in a pixel unit 110 are multi-colored, such as a red light emitting element, a green light emitting element, and a blue light emitting element.
在一些實施方式中,在一像素單元110中的多個發光元件160為同色,並且在顯示裝置200中在顯示元件100上方還設置有彩色濾光材料或量子點材料其中至少一者來將同色光轉成多色光。例如,發光元件160發出藍光,經由彩色濾光材料或量子點材料產生紅光或綠光。In some embodiments, the plurality of light-emitting elements 160 in a pixel unit 110 are of the same color, and at least one of a color filter material or a quantum dot material is disposed above the display element 100 in the display device 200 to convert the same color light into multi-color light. For example, the light-emitting element 160 emits blue light, which is converted into red light or green light through the color filter material or the quantum dot material.
在一些實施方式中,發光元件160可為無機發光元件、有機發光元件、或其它合適材料元件、或前述材料之組合。In some implementations, the light emitting element 160 may be an inorganic light emitting element, an organic light emitting element, or an element made of other suitable materials, or a combination of the aforementioned materials.
在一些實施方式中,發光元件160可以是微型發光二極體(micro-LED)、次毫米發光二極體(Mini-led)、或是尺寸大於次毫米發光二極體的發光二極體。In some implementations, the light emitting element 160 may be a micro-LED, a sub-millimeter light emitting diode (Mini-LED), or a light emitting diode having a size larger than a sub-millimeter light emitting diode.
在一些實施方式中,在發光元件160中,接觸第二線路層150的二個第二電極152的第一部份162A和第二部份162B(亦即陰極與陽極)可位在發光元件160的同一側或是分別位在發光元件160的上下兩側、或是其他合適的方向。In some embodiments, in the light-emitting element 160, the first portion 162A and the second portion 162B (ie, the cathode and the anode) of the two second electrodes 152 contacting the second circuit layer 150 may be located on the same side of the light-emitting element 160 or on the upper and lower sides of the light-emitting element 160, respectively, or in other suitable directions.
封裝膠層170覆蓋且在接收板130、第二線路層150及發光元件160上方。封裝膠層170可以將發光元件160密封,防止水氣進入,以維持發光元件160的性能與使用壽命。The encapsulation glue layer 170 covers and is above the receiving board 130, the second circuit layer 150 and the light emitting element 160. The encapsulation glue layer 170 can seal the light emitting element 160 to prevent moisture from entering, so as to maintain the performance and service life of the light emitting element 160.
在一些實施方式中,封裝膠層的材料可包含矽利康(silicone)或環氧樹脂(epoxy)。In some implementations, the material of the encapsulation adhesive layer may include silicone or epoxy.
在將發光元件封裝的製造製程中,需將封裝膠層設置在多個發光元件晶粒上。在設置封裝膠層的製程中,封裝膠層需在較高的溫度(例如,約130℃至約170℃溫度),以與在下方的接收板的絕緣層和線路層的金屬層結合。然而,在一些測試中發現,當選用熱膨脹係數較大的材料做為封裝膠層的材料時,在之後在降溫的過程中,封裝膠層會收縮,這會使得接收板的絕緣層與金屬層(例如貫孔、第一線路層、或第二線路層)之間的介面應力變大,導致金屬層剝離接收板的絕緣層,特別是發生在介於接收板的絕緣層和貫孔周圍之間、或是介於絕緣層、貫孔和第一線路層(或第二線路層)三者之間。因此導致了所形成的顯示元件和顯示裝置的良率降低。In the manufacturing process of packaging the light-emitting element, a packaging glue layer needs to be set on a plurality of light-emitting element dies. In the process of setting the packaging glue layer, the packaging glue layer needs to be at a relatively high temperature (e.g., about 130° C. to about 170° C.) to bond with the insulating layer of the receiving board below and the metal layer of the circuit layer. However, in some tests, it was found that when a material with a large thermal expansion coefficient is selected as the material of the packaging adhesive layer, the packaging adhesive layer will shrink during the subsequent cooling process, which will increase the interface stress between the insulating layer of the receiving board and the metal layer (such as the through hole, the first circuit layer, or the second circuit layer), causing the metal layer to peel off the insulating layer of the receiving board, especially between the insulating layer of the receiving board and the periphery of the through hole, or between the insulating layer, the through hole and the first circuit layer (or the second circuit layer). As a result, the yield of the display element and the display device formed is reduced.
由於金屬層剝離接收板的絕緣層可能是介於金屬層與接收板的絕緣層之間的張應力和剪應力所導致,而此張應力和此剪應力的產生主要是來自於上方的封裝膠層在降溫時的收縮效應對接收板的絕緣層造成影響,並且封裝膠層的收縮程度與封裝膠層的熱膨脹係數相關。因此在本揭示內容中進行應力模擬測試,以找出封裝膠層以及接收板的絕緣層的合適的熱膨脹係數,以減小介於金屬層與接收板的絕緣層之間的張應力和剪應力。Since the metal layer peels off the insulating layer of the receiving board, it may be caused by the tensile stress and shear stress between the metal layer and the insulating layer of the receiving board. The generation of this tensile stress and this shear stress mainly comes from the shrinkage effect of the upper packaging glue layer when the temperature drops, which affects the insulating layer of the receiving board, and the shrinkage degree of the packaging glue layer is related to the thermal expansion coefficient of the packaging glue layer. Therefore, in the present disclosure, a stress simulation test is performed to find out the appropriate thermal expansion coefficient of the packaging glue layer and the insulating layer of the receiving board to reduce the tensile stress and shear stress between the metal layer and the insulating layer of the receiving board.
第3A圖和第3B圖是應力模擬測試的圖,示出了在接收板中介於絕緣層及貫孔的金屬層之間的介面應力與在上方的封裝膠層的熱膨脹係數的關係。在第3A圖中所模擬測試的應力為剪應力,並且縱軸為標準化剪應力;在第3B圖中所摸擬測試的應力為張應力,並且縱軸為標準化張應力。在第3A圖和第3B圖中的橫軸為標準化的熱膨脹係數,此參數是將「封裝膠層的熱膨脹係數」除以「接收板的絕緣層的熱膨脹係數」,也就是「封裝膠層的熱膨脹係數與接收板的絕緣層的熱膨脹係數的比值」,在本文中亦簡稱為「熱膨脹係數的比值」。如前所述,在第3A圖中的縱軸為標準化剪應力,此參數是將「在不同的熱膨脹係數的比值時的介面剪應力」除以「在熱膨脹係數的比值為1時的剪應力」,在本文中亦可簡稱為「剪應力的比值」。如前所述,在第3B圖中的縱軸為標準化張應力,此參數是將「在不同的熱膨脹係數的比值時的介面張應力」除以「在熱膨脹係數的比值為1時的張應力」,在本文中亦可簡稱為「張應力的比值」。Figures 3A and 3B are stress simulation test diagrams, showing the relationship between the interface stress between the insulating layer and the metal layer of the through hole in the receiving board and the thermal expansion coefficient of the packaging glue layer above. The stress simulated in Figure 3A is shear stress, and the vertical axis is the standardized shear stress; the stress simulated in Figure 3B is tensile stress, and the vertical axis is the standardized tensile stress. The horizontal axis in Figures 3A and 3B is the standardized thermal expansion coefficient. This parameter is the "thermal expansion coefficient of the encapsulating adhesive layer" divided by the "thermal expansion coefficient of the insulating layer of the receiving board", that is, the "ratio of the thermal expansion coefficient of the encapsulating adhesive layer to the thermal expansion coefficient of the insulating layer of the receiving board", which is also referred to as the "ratio of thermal expansion coefficients" in this article. As mentioned above, the vertical axis in Figure 3A is the standardized shear stress. This parameter is the "interface shear stress at different thermal expansion coefficient ratios" divided by the "shear stress when the thermal expansion coefficient ratio is 1", which is also referred to as the "ratio of shear stress" in this article. As mentioned above, the vertical axis in FIG. 3B is the normalized tensile stress. This parameter is the "interface tensile stress at different ratios of thermal expansion coefficients" divided by the "tensile stress when the ratio of thermal expansion coefficients is 1", which may also be referred to as the "tensile stress ratio" in this article.
如在第3A圖中所示,可見當標準化的熱膨脹係數大於1時,標準化剪應力大於1。也就是說,相較於封裝膠層的熱膨脹係與接收板的絕緣層的熱膨脹系數相等的狀況,當封裝膠層的熱膨脹係數大於接收板的絕緣層的熱膨脹係數時,在接收板中介於絕緣層及貫孔的金屬層之間的介面剪應力較大。當標準化的熱膨脹係數小於1時,標準化剪應力小於1。也就是說,相較於封裝膠層的熱膨脹係與接收板的絕緣層的熱膨脹系數相等的狀況,當封裝膠層的熱膨脹係數小於接收板的絕緣層的熱膨脹係數時,在接收板中介於絕緣層及貫孔的金屬層之間的介面剪應力較小。As shown in FIG. 3A, it can be seen that when the normalized thermal expansion coefficient is greater than 1, the normalized shear stress is greater than 1. That is, compared to the case where the thermal expansion coefficient of the encapsulating adhesive layer is equal to the thermal expansion coefficient of the insulating layer of the receiving board, when the thermal expansion coefficient of the encapsulating adhesive layer is greater than the thermal expansion coefficient of the insulating layer of the receiving board, the interface shear stress between the insulating layer and the metal layer of the through hole in the receiving board is greater. When the normalized thermal expansion coefficient is less than 1, the normalized shear stress is less than 1. That is, compared to the case where the thermal expansion coefficient of the encapsulating adhesive layer is equal to the thermal expansion coefficient of the insulating layer of the receiving board, when the thermal expansion coefficient of the encapsulating adhesive layer is smaller than the thermal expansion coefficient of the insulating layer of the receiving board, the interface shear stress between the insulating layer and the metal layer of the through hole in the receiving board is smaller.
參看在第3A圖中所示的曲線,可見在橫軸的標準化的熱膨脹係數的數值從1.6降至1時,亦即封裝膠層的熱膨脹係數從封裝板的絕緣層的熱膨脹係數的1.6倍降低至與封裝板的絕緣層的熱膨脹係數相等,標準化剪應力值從約1.2降低至1。在橫軸的標準化的熱膨脹係數的數值從1降低至接近為0時,亦即封裝膠層的熱膨脹係數從與封裝板的絕緣層的熱膨脹係數相等降低至熱膨脹係數極小的情況,標準化剪應力從約1降低至約0.96。Referring to the curve shown in FIG. 3A , it can be seen that when the value of the normalized thermal expansion coefficient on the horizontal axis decreases from 1.6 to 1, that is, the thermal expansion coefficient of the packaging adhesive layer decreases from 1.6 times the thermal expansion coefficient of the insulation layer of the packaging board to being equal to the thermal expansion coefficient of the insulation layer of the packaging board, the normalized shear stress value decreases from about 1.2 to 1. When the value of the normalized thermal expansion coefficient on the horizontal axis decreases from 1 to nearly 0, that is, the thermal expansion coefficient of the packaging adhesive layer decreases from being equal to the thermal expansion coefficient of the insulation layer of the packaging board to a situation where the thermal expansion coefficient is extremely small, the normalized shear stress decreases from about 1 to about 0.96.
如在第3A圖中所示,在標準化的熱膨脹係數從1.6降低至1時,曲線的斜率較大,亦即標準化剪應力下降的幅度較大。在標準化的熱膨脹係數從1降低至約為0時,曲線的斜率較小,亦即標準化剪應力下降的幅度較小。也就是說,降低封裝膠層的熱膨脹係數至約等於封裝板的絕緣層的熱膨脹係數時,能明顯減小介面剪應力。進一步降低封裝膠層的熱膨脹係數與封裝膠層的熱膨脹係數的比值為0.8時,可略微再減小介面剪應力。再進一步降低封裝膠層的熱膨脹係數與封裝膠層的熱膨脹係數的比值小於0.8時,可略微再減小介面剪應力。As shown in Figure 3A, when the normalized thermal expansion coefficient decreases from 1.6 to 1, the slope of the curve is larger, that is, the normalized shear stress decreases more. When the normalized thermal expansion coefficient decreases from 1 to about 0, the slope of the curve is smaller, that is, the normalized shear stress decreases less. In other words, when the thermal expansion coefficient of the packaging adhesive layer is reduced to approximately equal to the thermal expansion coefficient of the insulation layer of the packaging board, the interface shear stress can be significantly reduced. When the ratio of the thermal expansion coefficient of the packaging adhesive layer to the thermal expansion coefficient of the packaging adhesive layer is further reduced to 0.8, the interface shear stress can be slightly reduced. When the ratio of the thermal expansion coefficient of the packaging adhesive layer to the thermal expansion coefficient of the packaging adhesive layer is further reduced to less than 0.8, the interface shear stress can be slightly reduced.
如在第3B圖中所示,可見當標準化的熱膨脹係數大於1時,標準化張應力大於1。也就是說,相較於封裝膠層的熱膨脹係與接收板的絕緣層的熱膨脹系數相等的狀況,當封裝膠層的熱膨脹係數大於接收板的絕緣層的熱膨脹係數時,在接收板中介於絕緣層及貫孔的金屬層之間的介面張應力較大。當標準化的熱膨脹係數小於1時,標準化張應力小於1。也就是說,相較於封裝膠層的熱膨脹係與接收板的絕緣層的熱膨脹系數相等的狀況,當封裝膠層的熱膨脹係數小於接收板的絕緣層的熱膨脹係數時,在接收板中介於絕緣層及貫孔的金屬層之間的介面張應力較小。As shown in FIG. 3B, it can be seen that when the normalized thermal expansion coefficient is greater than 1, the normalized tensile stress is greater than 1. That is, compared to the case where the thermal expansion coefficient of the encapsulating adhesive layer is equal to the thermal expansion coefficient of the insulating layer of the receiving board, when the thermal expansion coefficient of the encapsulating adhesive layer is greater than the thermal expansion coefficient of the insulating layer of the receiving board, the interface tensile stress between the insulating layer and the metal layer of the through hole in the receiving board is greater. When the normalized thermal expansion coefficient is less than 1, the normalized tensile stress is less than 1. That is, compared to the case where the thermal expansion coefficient of the packaging adhesive layer is equal to the thermal expansion coefficient of the insulating layer of the receiving board, when the thermal expansion coefficient of the packaging adhesive layer is smaller than the thermal expansion coefficient of the insulating layer of the receiving board, the interface tensile stress between the insulating layer and the metal layer of the through hole in the receiving board is smaller.
參看在第3B圖中所示的曲線,可見在橫軸的標準化的熱膨脹係數的數值從1.6降至1時,亦即封裝膠層的熱膨脹係數從封裝板的絕緣層的熱膨脹係數的1.6倍降低至與封裝板的絕緣層的熱膨脹係數相等,標準化張應力值從約1.68降低至1。在橫軸的標準化的熱膨脹係數的數值從1降低至約為0.8時,亦即封裝膠層的熱膨脹係數從與封裝板的絕緣層的熱膨脹係數相等降低至為封裝板的絕緣層的熱膨脹係數的0.8倍情況,標準化張應力從約1降低至約0.8。在橫軸的標準化的熱膨脹係數的數值從0.8降低至接近為0時,亦即封裝膠層的熱膨脹係數從與封裝板的絕緣層的熱膨脹係數相等降低至熱膨脹係數極小的情況,標準化張應力從約0.8降低至約0.76。Referring to the curve shown in FIG. 3B , it can be seen that when the value of the standardized thermal expansion coefficient on the horizontal axis decreases from 1.6 to 1, that is, the thermal expansion coefficient of the packaging adhesive layer decreases from 1.6 times the thermal expansion coefficient of the insulation layer of the packaging board to being equal to the thermal expansion coefficient of the insulation layer of the packaging board, the standardized tensile stress value decreases from about 1.68 to 1. When the value of the normalized thermal expansion coefficient on the horizontal axis decreases from 1 to about 0.8, that is, the thermal expansion coefficient of the packaging adhesive layer decreases from being equal to the thermal expansion coefficient of the insulation layer of the packaging board to 0.8 times the thermal expansion coefficient of the insulation layer of the packaging board, the normalized tensile stress decreases from about 1 to about 0.8. When the value of the normalized thermal expansion coefficient on the horizontal axis decreases from 0.8 to nearly 0, that is, the thermal expansion coefficient of the packaging adhesive layer decreases from being equal to the thermal expansion coefficient of the insulation layer of the packaging board to being extremely small, the normalized tensile stress decreases from about 0.8 to about 0.76.
如在第3B圖中所示,在標準化的熱膨脹係數從1.6降低至0.8時,曲線的斜率較大,亦即標準化張應力下降的幅度較大。在標準化的熱膨脹係數從0.8降低至約為0時,曲線的斜率較小,亦即標準化張應力下降的幅度較小。也就是說,降低封裝膠層的熱膨脹係數至約等於封裝板的絕緣層的熱膨脹係數時,能明顯減小介面張應力。進一步降低封裝膠層的熱膨脹係數與封裝膠層的熱膨脹係數的比值為0.8時,可再進一步減小介面張應力。再進一步降低封裝膠層的熱膨脹係數與封裝膠層的熱膨脹係數的比值小於0.8時,可略微再減小介面張應力。As shown in Figure 3B, when the standardized thermal expansion coefficient decreases from 1.6 to 0.8, the slope of the curve is larger, that is, the normalized tensile stress decreases by a larger margin. When the standardized thermal expansion coefficient decreases from 0.8 to approximately 0, the slope of the curve is smaller, that is, the normalized tensile stress decreases by a smaller margin. In other words, when the thermal expansion coefficient of the packaging adhesive layer is reduced to approximately equal to the thermal expansion coefficient of the insulation layer of the packaging board, the interface tensile stress can be significantly reduced. When the ratio of the thermal expansion coefficient of the packaging adhesive layer to the thermal expansion coefficient of the packaging adhesive layer is further reduced to 0.8, the interface tensile stress can be further reduced. When the ratio of the thermal expansion coefficient of the packaging adhesive layer to the thermal expansion coefficient of the packaging adhesive layer is further reduced to less than 0.8, the interface tensile stress can be slightly reduced.
因此可知,經由調整封裝膠層的熱膨脹係數、或是調整封裝膠層的熱膨脹係數與封裝板的絕緣層的熱膨脹係數的比值,將可降低封裝板中介於絕緣層與金屬層之間的剪應力與張應力。 Therefore, it can be seen that by adjusting the thermal expansion coefficient of the packaging glue layer, or adjusting the ratio of the thermal expansion coefficient of the packaging glue layer to the thermal expansion coefficient of the insulation layer of the packaging board, the shear stress and tensile stress between the insulation layer and the metal layer of the packaging board can be reduced.
為了改善上述的絕緣層與金屬層之間的剝離現象,在本揭示內容的一些實施方式中,接收板130的絕緣層132具有第一熱膨脹係數,封裝膠層170具有第二熱膨脹係數,並且封裝膠層170的第二熱膨脹係數小於接收板130的絕緣層132的第一熱膨脹係數,以使得封裝膠層170在降溫的過程中,收縮程度不致於過大而造成在接收板130中介於絕緣層132與金屬層之間的應力過大。 In order to improve the above-mentioned peeling phenomenon between the insulating layer and the metal layer, in some embodiments of the present disclosure, the insulating layer 132 of the receiving board 130 has a first thermal expansion coefficient, and the packaging adhesive layer 170 has a second thermal expansion coefficient, and the second thermal expansion coefficient of the packaging adhesive layer 170 is less than the first thermal expansion coefficient of the insulating layer 132 of the receiving board 130, so that the packaging adhesive layer 170 will not shrink too much during the cooling process, causing excessive stress between the insulating layer 132 and the metal layer in the receiving board 130.
以下提供一比較例和實施例的測試,以驗證調整封裝膠層的熱膨脹係數與封裝板的絕緣層的熱膨脹係數的比值,可以降低在封裝板中介於絕緣層及貫孔的金屬層之間的剪應力與張應力。 The following provides a comparative example and a test of an embodiment to verify that adjusting the ratio of the thermal expansion coefficient of the packaging glue layer to the thermal expansion coefficient of the insulation layer of the packaging board can reduce the shear stress and tensile stress between the insulation layer and the metal layer of the through hole in the packaging board.
比較例1: Comparison Example 1:
封裝板的絕緣層所使用的材料為聚醯亞胺(Polyimide,PI),熱膨脹係數為50ppm/℃。封裝膠層所使用的材料為環氧樹脂,熱膨脹係數為70ppm/℃。也就是說,在比較例1中,封裝膠層的熱膨脹係數與絕緣層的熱膨脹係數的比值為1.4。之後檢測在封裝板的絕緣層與貫孔周圍的應力分佈。 The material used for the insulation layer of the package board is polyimide (PI), and the thermal expansion coefficient is 50ppm/℃. The material used for the packaging adhesive layer is epoxy resin, and the thermal expansion coefficient is 70ppm/℃. That is to say, in Comparative Example 1, the ratio of the thermal expansion coefficient of the packaging adhesive layer to the thermal expansion coefficient of the insulation layer is 1.4. Then, the stress distribution around the insulation layer and the through hole of the package board is detected.
參見第4A圖和第4B圖的剪應力分佈圖。在第4A圖的左側為剪應力的分級,以不同的灰階來表示剪應力的大小,其中白色為在檢測範圍中剪應力最低的級別,黑色為在檢測範圍中剪應力最高的級別。第4A圖中示出接收板的絕緣層332,四個白色圓形為在一像素單元110(見第1A圖)中的四個貫孔334A、334B、334C和334D。四個矩形區域分別為第二線路層的四個第二電極342A、342B、342C、和342D與絕緣層之間的介面的輪廓。第4B圖為放大圖,示出在第4A圖中的右下方的貫孔334D。See the shear stress distribution diagrams of FIG. 4A and FIG. 4B. On the left side of FIG. 4A is the shear stress classification, with different gray levels used to represent the magnitude of the shear stress, where white is the lowest level of shear stress in the detection range, and black is the highest level of shear stress in the detection range. FIG. 4A shows the insulating layer 332 of the receiving plate, and the four white circles are the four through holes 334A, 334B, 334C and 334D in a pixel unit 110 (see FIG. 1A). The four rectangular areas are the outlines of the interfaces between the four second electrodes 342A, 342B, 342C, and 342D of the second circuit layer and the insulating layer. FIG. 4B is an enlarged view showing the through hole 334D at the lower right of FIG. 4A.
在第4A圖和第4B圖中,四個第二電極342A、342B、342C、和342D的深灰色輪廓代表在這些電極的邊緣處有不同於絕緣層332的剪應力。也就是說,相較於絕緣層332,在介於第二線路層的第二電極342A、342B、342C、和342D與絕緣層332之間的介面有較大的剪應力。進一步參看第4B圖的放大視圖,顯示在介於第二電極342D、絕緣層332、和貫孔334D三者之間的介面300A和300B為接近黑色,代表此處具有最大剪應力。In FIG. 4A and FIG. 4B , the dark gray outlines of the four second electrodes 342A, 342B, 342C, and 342D represent that the edges of these electrodes have shear stresses different from the insulating layer 332. That is, compared with the insulating layer 332, the interfaces between the second electrodes 342A, 342B, 342C, and 342D of the second circuit layer and the insulating layer 332 have greater shear stresses. Further referring to the enlarged view of FIG. 4B , the interfaces 300A and 300B between the second electrode 342D, the insulating layer 332, and the through hole 334D are nearly black, indicating that the maximum shear stress is present there.
此外,測試的結果顯示在接收板中介於絕緣層332與貫孔334A、334B、334C和334D的金屬層之間的最大剪應力為63 MPa。In addition, the test results show that the maximum shear stress between the insulating layer 332 and the metal layer of the through holes 334A, 334B, 334C and 334D in the receiving plate is 63 MPa.
參見第5A圖和第5B圖的張應力分佈圖。在第5A圖的左側為張應力的分級,以不同的灰階來表示張應力的大小,其中黑色代表張應力最高的級別,白色代表張應力最低的級別。See Figures 5A and 5B for the tensile stress distribution diagram. On the left side of Figure 5A is the tensile stress classification, with different gray levels representing the magnitude of the tensile stress, where black represents the highest level of tensile stress and white represents the lowest level of tensile stress.
如在第5A圖和第5B圖中所示,第二線路層的四個第二電極342A、342B、342C、和342D的淺灰色輪廓代表在這些電極的邊緣處有不同於絕緣層332的張應力。也就是說,相較於絕緣層332,在介於第二線路層的第二電極342A、342B、342C、和342D與絕緣層332之間有較小的張應力。進一步參看第5B圖的放大視圖,顯示在介於第二電極342D、絕緣層332、和貫孔334D三者之間的介面302A和302B為接近黑色,代表此處有最大張應力。As shown in FIGS. 5A and 5B , the light gray outlines of the four second electrodes 342A, 342B, 342C, and 342D of the second wiring layer represent that there is a tensile stress different from that of the insulating layer 332 at the edges of these electrodes. That is, there is a smaller tensile stress between the second electrodes 342A, 342B, 342C, and 342D of the second wiring layer and the insulating layer 332 than between the second electrodes 342A, 342B, 342C, and 342D of the second wiring layer and the insulating layer 332. Referring further to the enlarged view of FIG. 5B , it is shown that the interfaces 302A and 302B between the second electrode 342D, the insulating layer 332, and the through hole 334D are nearly black, indicating that the maximum tensile stress is present there.
此外,測試的結果顯示在接收板中介於絕緣層332與貫孔334A、334B、334C和334D的金屬層之間的最大張應力為96 MPa。In addition, the test results show that the maximum tensile stress between the insulating layer 332 and the metal layer of the through holes 334A, 334B, 334C and 334D in the receiving plate is 96 MPa.
實施例1:Embodiment 1:
封裝板的絕緣層所使用的材料為聚醯亞胺,熱膨脹係數為50 ppm/℃。封裝膠層所使用的材料為環氧樹脂,熱膨脹係數為30 ppm/℃。也就是說,在實施例1中,封裝膠層的熱膨脹係數與絕緣層的熱膨脹係數的比值為0.6。之後檢測在封裝板的絕緣層與貫孔周圍的應力分佈。The material used for the insulation layer of the package board is polyimide, and the thermal expansion coefficient is 50 ppm/°C. The material used for the packaging adhesive layer is epoxy resin, and the thermal expansion coefficient is 30 ppm/°C. That is, in Example 1, the ratio of the thermal expansion coefficient of the packaging adhesive layer to the thermal expansion coefficient of the insulation layer is 0.6. Then, the stress distribution around the insulation layer and the through hole of the package board is detected.
參見第6A圖和第6B圖的剪應力分佈圖。在第4A圖的左側為剪應力的分級,以不同的灰階來表示剪應力的大小,其中白色為在檢測範圍中剪應力最低的級別,黑色為在檢測範圍中剪應力最高的級別。第6A圖中示出接收板的絕緣層432,四個白色圓形為在一像素單元110(見第1A圖)中的四個貫孔434A、434B、434C和434D。四個矩型區域分別代表第二線路層的四個第二電極442A、442B、442C、和442D的邊界。第6B圖為放大圖,示出在第6A圖中的右下方的貫孔434D。See the shear stress distribution diagrams of FIG. 6A and FIG. 6B. On the left side of FIG. 4A is the shear stress classification, with different gray levels used to represent the magnitude of the shear stress, where white is the lowest level of shear stress in the detection range, and black is the highest level of shear stress in the detection range. FIG. 6A shows the insulating layer 432 of the receiving plate, and the four white circles are four through holes 434A, 434B, 434C, and 434D in a pixel unit 110 (see FIG. 1A). The four rectangular areas represent the boundaries of the four second electrodes 442A, 442B, 442C, and 442D of the second circuit layer, respectively. FIG. 6B is an enlarged view showing the through hole 434D at the lower right of FIG. 6A.
在第6A圖和第6B圖中,四個第二電極442A、442B、442C、和442D的灰色輪廓代表在這些電極的邊緣處有不同於絕緣層432的剪應力。也就是說,相較於絕緣層432,在介於第二線路層的第二電極442A、442B、442C、和442D與絕緣層432之間的介面有較大的剪應力。進一步參看第6B圖的放大視圖,顯示在介於第二電極442D、絕緣層432、和貫孔434D三者之間的介面400A和400B為接近深灰色,代表此處具有最大剪應力。In FIG. 6A and FIG. 6B , the gray outlines of the four second electrodes 442A, 442B, 442C, and 442D represent that the edges of these electrodes have shear stresses different from those of the insulating layer 432. That is, compared to the insulating layer 432, the interfaces between the second electrodes 442A, 442B, 442C, and 442D of the second circuit layer and the insulating layer 432 have greater shear stresses. Further referring to the enlarged view of FIG. 6B , the interfaces 400A and 400B between the second electrode 442D, the insulating layer 432, and the through hole 434D are shown to be close to dark gray, indicating that the maximum shear stress is present there.
此外,測試的結果顯示在接收板中介於絕緣層432與貫孔434A、434B、434C和434D的金屬層之間的最大剪應力為55.6 MPa。In addition, the test results show that the maximum shear stress between the insulating layer 432 and the metal layer of the through holes 434A, 434B, 434C and 434D in the receiving plate is 55.6 MPa.
將比較例1的第4A圖至第4B圖以及實施例1的第6A圖至第6B圖進行比較,可見比較例1的最大剪應力(例如在第4B圖的介面300A和300B處)大於實施例1的最大剪應力(例如在第6B圖的介面400A和400B處)。By comparing Figures 4A to 4B of Comparative Example 1 and Figures 6A to 6B of Embodiment 1, it can be seen that the maximum shear stress of Comparative Example 1 (for example, at interfaces 300A and 300B in Figure 4B) is greater than the maximum shear stress of Embodiment 1 (for example, at interfaces 400A and 400B in Figure 6B).
參見第7A圖和第7B圖的張應力分佈圖。在第7A圖的左側為張應力的分級,以不同的灰階來表示張應力的大小,其中黑色代表張應力最高的級別,白色代表張應力最低的級別。See Figures 7A and 7B for the tensile stress distribution diagram. On the left side of Figure 7A is the tensile stress classification, with different gray levels representing the magnitude of the tensile stress, where black represents the highest level of tensile stress and white represents the lowest level of tensile stress.
如在第7A圖和第7B圖中所示,第二線路層的四個第二電極442A、442B、442C、和442D的淺灰色輪廓代表在這些電極的邊緣處有不同於絕緣層432的張應力。也就是說,相較於絕緣層432,在介於第二線路層的第二電極442A、442B、442C、和442D與絕緣層432之間有較小的張應力。進一步參看第7B圖的放大視圖,顯示在介於第二電極442D、絕緣層432、和貫孔434D三者之間的介面402A和402B為接近深灰色,代表此處有最大張應力。As shown in FIG. 7A and FIG. 7B , the light gray outlines of the four second electrodes 442A, 442B, 442C, and 442D of the second wiring layer represent that there is a tensile stress different from the insulating layer 432 at the edges of these electrodes. That is, there is a smaller tensile stress between the second electrodes 442A, 442B, 442C, and 442D of the second wiring layer and the insulating layer 432 than between the second electrodes 442A, 442B, 442C, and 442D of the second wiring layer. Referring further to the enlarged view of FIG. 7B , it is shown that the interfaces 402A and 402B between the second electrode 442D, the insulating layer 432, and the through hole 434D are nearly dark gray, indicating that the maximum tensile stress is present there.
此外,測試的結果顯示在接收板中介於絕緣層432與貫孔434A、434B、434C和434D的金屬層之間的最大張應力為77.1 MPa。In addition, the test results show that the maximum tensile stress between the insulating layer 432 and the metal layer of the through holes 434A, 434B, 434C and 434D in the receiving plate is 77.1 MPa.
將比較例1的第5A圖至第5B圖以及實施例1的第7A圖至第7B圖進行比較,可見比較例1的最大張應力(例如在第5B圖的介面302A和302B處)大於實施例1的最大張應力(例如在第7B圖的介面402A和402B處)。By comparing Figures 5A to 5B of Comparative Example 1 and Figures 7A to 7B of Embodiment 1, it can be seen that the maximum tensile stress of Comparative Example 1 (for example, at interfaces 302A and 302B in Figure 5B) is greater than the maximum tensile stress of Embodiment 1 (for example, at interfaces 402A and 402B in Figure 7B).
由上述比較例1和實施例1的測試結果顯示,當封裝膠層的熱膨脹係數從70 ppm/℃減小為30 ppm/℃(亦即,封裝膠層的熱脹脹係數與絕緣層的熱膨脹係數的比值從1.4減小為0.6),最大介面剪應力可降低約11.7%,最大介面張應力可降低約19.7%。The test results of the above-mentioned Comparative Example 1 and Implementation Example 1 show that when the thermal expansion coefficient of the packaging adhesive layer is reduced from 70 ppm/°C to 30 ppm/°C (that is, the ratio of the thermal expansion coefficient of the packaging adhesive layer to the thermal expansion coefficient of the insulation layer is reduced from 1.4 to 0.6), the maximum interface shear stress can be reduced by approximately 11.7%, and the maximum interface tensile stress can be reduced by approximately 19.7%.
根據本揭示內容的一些實施方式,封裝膠層170的第二熱膨脹係數小於接收板130的絕緣層132的第一熱膨脹係數,可使得在接收板130中介於絕緣層132與貫孔134的介面剪應力和張應力減小,因此可減少剝離現象的發生。在一些實施方式中,封裝膠層170的熱膨脹係數與絕緣層132的熱膨脹係數的比值為小於等於約0.8且大於0,可進一步減小在接收板130中介於絕緣層132與貫孔134的介面剪應力和張應力,以更減少剝離現象的發生。According to some embodiments of the present disclosure, the second thermal expansion coefficient of the packaging adhesive layer 170 is smaller than the first thermal expansion coefficient of the insulating layer 132 of the receiving plate 130, so that the shear stress and tensile stress at the interface between the insulating layer 132 and the through hole 134 in the receiving plate 130 can be reduced, thereby reducing the occurrence of peeling. In some embodiments, the ratio of the thermal expansion coefficient of the packaging glue layer 170 to the thermal expansion coefficient of the insulating layer 132 is less than or equal to about 0.8 and greater than 0, which can further reduce the shear stress and tensile stress at the interface between the insulating layer 132 and the through hole 134 in the receiving plate 130 to further reduce the occurrence of peeling.
請回到第2圖繼續參看顯示元件100。在一些實施方式中,接收板130的絕緣層可包含聚醯亞胺(PI)、苯並環丁烯(BCB)、聚苯並噁唑(PBO)、Su-8負型光阻、WPR光阻、或類似者。在一些實施方式中,接收板130的熱膨脹係數範圍為約30至約70 ppm/℃。Please return to FIG. 2 to continue to refer to the display device 100. In some embodiments, the insulating layer of the receiving plate 130 may include polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO), Su-8 negative photoresist, WPR photoresist, or the like. In some embodiments, the thermal expansion coefficient of the receiving plate 130 ranges from about 30 to about 70 ppm/°C.
在一些實施方式中,接收板130不包含例如驅動元件的主動元件。In some embodiments, the receiving plate 130 does not include active components such as drive components.
在一些實施方式中,封裝膠層170可包含矽利康(Silicone)或環氧樹脂(Epoxy)。在一些實施方式中,封裝膠層170的熱膨脹係數的範圍為約1 ppm/℃至約65 ppm/℃。在一些實施方式中,封裝膠層170的熱膨脹係數的範圍為約10 ppm/℃至約40 ppm/℃。In some embodiments, the encapsulation adhesive layer 170 may include silicone or epoxy. In some embodiments, the thermal expansion coefficient of the encapsulation adhesive layer 170 ranges from about 1 ppm/°C to about 65 ppm/°C. In some embodiments, the thermal expansion coefficient of the encapsulation adhesive layer 170 ranges from about 10 ppm/°C to about 40 ppm/°C.
在一些實施方式中,封裝膠層170還可包含無機填充材料,無機填充材料具有較小的熱膨脹係數,以使封裝膠層170的熱膨脹係數小於接收板130的絕緣層132的熱膨脹係數。無機填充材料可例如:二氧化矽、二氧化鈦、氧化鋁、氧化釔、碳黑(carbon black)、燒結鑽石粉末(sintered diamond powder)、玻璃、或其組合。In some embodiments, the encapsulation adhesive layer 170 may further include an inorganic filler material having a smaller thermal expansion coefficient so that the thermal expansion coefficient of the encapsulation adhesive layer 170 is smaller than the thermal expansion coefficient of the insulating layer 132 of the receiving plate 130. The inorganic filler material may be, for example, silicon dioxide, titanium dioxide, aluminum oxide, yttrium oxide, carbon black, sintered diamond powder, glass, or a combination thereof.
在一些實施方式中,封裝膠層170可例用注膠或壓模(molding)方式設置於接收板130上方。In some embodiments, the packaging glue layer 170 can be disposed on the receiving plate 130 by, for example, glue injection or molding.
參見第8圖,繪示根據一些實施方式的顯示裝置的局部截面視圖。顯示裝置200包含顯示元件100和支撐板210。支撐板210包含基底層220和驅動電路層230。驅動電路層230包含多個接墊240和與這些接墊240對應且電性連接的電路元件250和260。在第8圖中電路元件260為示意性繪示,電路元件260可例如為驅動元件、切換元件、線路、二極體、電阻或電容其中至少一者。在一些實施方式中,驅動電路層230可包含顯示裝置200需要的主動元件、被動元件、或線路,例如:驅動元件、切換元件、儲存電容、電源線、驅動信號線、時序信號線、電流補償線、檢測信號線等。 Referring to FIG. 8 , a partial cross-sectional view of a display device according to some embodiments is shown. The display device 200 includes a display element 100 and a support plate 210. The support plate 210 includes a base layer 220 and a driving circuit layer 230. The driving circuit layer 230 includes a plurality of pads 240 and circuit elements 250 and 260 corresponding to and electrically connected to the pads 240. In FIG. 8 , the circuit element 260 is schematically shown, and the circuit element 260 may be, for example, at least one of a driving element, a switching element, a line, a diode, a resistor, or a capacitor. In some implementations, the driving circuit layer 230 may include active components, passive components, or circuits required by the display device 200, such as driving components, switching components, storage capacitors, power lines, driving signal lines, timing signal lines, current compensation lines, detection signal lines, etc.
顯示元件100的第一線路層140的多個第一電極142電性連接支撐板210的驅動電路層230的對應的接墊240以及電路元件250和260。 The first electrodes 142 of the first circuit layer 140 of the display element 100 are electrically connected to the corresponding pads 240 of the driving circuit layer 230 of the support plate 210 and the circuit elements 250 and 260.
如在第8圖中所示,發光元件160經由第一電極142、接墊240而電性連接至在支撐板210的驅動電路層230中的電路元件260,以使在支撐板210的驅動電路層230的電路元件260中的驅動元件和其他線路元件能控制這些發光元件160發光。 As shown in FIG. 8 , the light-emitting element 160 is electrically connected to the circuit element 260 in the driving circuit layer 230 of the support plate 210 via the first electrode 142 and the pad 240 , so that the driving element and other circuit elements in the circuit element 260 in the driving circuit layer 230 of the support plate 210 can control these light-emitting elements 160 to emit light.
在一些實施方式中,支撐板210的基底層220是剛性基板或柔性基板,例如玻璃板、陶瓷板或高分子基板,其中高分子基板的材料例如是聚醯亞胺(PI)、或聚對苯二甲酸乙二酯(PET)、液晶聚合物、或其組合。支撐板的基板可以是單層或多層的結構。 In some embodiments, the base layer 220 of the support plate 210 is a rigid substrate or a flexible substrate, such as a glass plate, a ceramic plate or a polymer substrate, wherein the material of the polymer substrate is, for example, polyimide (PI), polyethylene terephthalate (PET), liquid crystal polymer, or a combination thereof. The substrate of the support plate can be a single-layer or multi-layer structure.
在一些實施方式中,支撐板210可以是印刷電路板、柔性電路板、柔性印刷電路板(flexible printed circuit, FPC)、薄膜覆晶(chip on film, COF)、或其他適合的電路板。In some embodiments, the support board 210 may be a printed circuit board, a flexible circuit board, a flexible printed circuit (FPC), a chip on film (COF), or other suitable circuit boards.
在一些實施方式中,顯示元件100是設置在已完成的支撐板210上,所以顯示元件100和支撐板是兩個獨立的元件。因此,顯示元件100與支撐板210兩者可以分別在兩個不同的製造場所中製造。In some embodiments, the display element 100 is disposed on the completed support plate 210, so the display element 100 and the support plate are two independent elements. Therefore, the display element 100 and the support plate 210 can be manufactured in two different manufacturing sites.
在一些實施方式中,在多個發光元件160電性連接於接收板130的第二電極152之後,設置封裝膠層170,形成一封裝結構,之後將多個封裝結構設置於包含驅動電路層230的支撐板210上,形成顯示裝置200。也就是說,將完成的顯示元件100(具有封裝膠層)設置於支撐板210上。In some embodiments, after the plurality of light-emitting elements 160 are electrically connected to the second electrode 152 of the receiving board 130, a packaging glue layer 170 is provided to form a packaging structure, and then the plurality of packaging structures are provided on a support board 210 including a driving circuit layer 230 to form a display device 200. In other words, the completed display element 100 (with the packaging glue layer) is provided on the support board 210.
在另一些實施方式中,在發光元件160電性連接於接收板130的第二電極152之後,將包含多個發光元件160的接收板130設置於包含驅動電路層230的支撐板210上,形成一中間結構;之後設置封裝膠層170覆蓋此中間結構。也就是說,將未完成的多個顯示元件100(不具有封裝膠層)設置於支撐板210上,再施加封裝膠層170,形成位在支撐板210上的多個顯示元件100,具有一共同的封裝膠層170。In other embodiments, after the light-emitting element 160 is electrically connected to the second electrode 152 of the receiving board 130, the receiving board 130 including the plurality of light-emitting elements 160 is disposed on the supporting board 210 including the driving circuit layer 230 to form an intermediate structure; and then the packaging layer 170 is disposed to cover the intermediate structure. In other words, the plurality of unfinished display elements 100 (without the packaging layer) are disposed on the supporting board 210, and then the packaging layer 170 is applied, so that the plurality of display elements 100 located on the supporting board 210 have a common packaging layer 170.
參見第9A圖至第9D圖,繪示根據一些實施方式的形成顯示裝置的方法的多個中間步驟。9A to 9D, which illustrate several intermediate steps of a method for forming a display device according to some implementations.
如在第9A圖中所示,將多個發光元件設置於接收板上。接收板130包含絕緣層132及貫孔134。在接收板130的下表面136設置有第一線路層140,並且在接收板130的上表面138設置有第二線路層150。在一些實施方式,可經由巨量轉移的技術,將複數個發光元件160設置於接收板130上並接合於對應的多個第二電極152。因此,各個發光元件160的第一部份162A(例如陽極)和第二部份162B(例如陰極)電性連接對應的第二電極152、貫孔134、和第一電極142。As shown in FIG. 9A , a plurality of light emitting elements are disposed on a receiving board. The receiving board 130 includes an insulating layer 132 and a through hole 134. A first circuit layer 140 is disposed on a lower surface 136 of the receiving board 130, and a second circuit layer 150 is disposed on an upper surface 138 of the receiving board 130. In some embodiments, a plurality of light emitting elements 160 may be disposed on the receiving board 130 and bonded to a plurality of corresponding second electrodes 152 by mass transfer technology. Therefore, a first portion 162A (e.g., an anode) and a second portion 162B (e.g., a cathode) of each light emitting element 160 are electrically connected to the corresponding second electrode 152, the through hole 134, and the first electrode 142.
如在第9B圖中所示,在發光元件、接收板、和第二線路層上方設置封裝膠層,形成封裝結構,亦即顯示元件。顯示元件100中,封裝膠層170設置在發光元件160、接收板130、和第二線路層150上方。As shown in FIG. 9B , a packaging layer is disposed above the light emitting element, the receiving board, and the second circuit layer to form a packaging structure, i.e., a display element. In the display element 100 , the packaging layer 170 is disposed above the light emitting element 160 , the receiving board 130 , and the second circuit layer 150 .
在一些實施方式中,由於之後須將具有封裝膠層170的顯示元件100設置於支撐板210上,因此封裝膠層170的材料優選為硬度較高的材料,例如楊氏模數大於0.1 MPa,有利於之後的轉置過程並且較不會變形。在這樣的實施方式中,如果封裝膠層170的楊氏模數小於0.1 MPa,會導致封裝膠層170的硬度太軟而不利於後續的轉置過程,例如會造成線路的損壞而降低良率。在一些實施方式中,封裝膠層170的楊氏模數的範圍為在約0.1 MPa至約10 GPa之間,例如,封裝膠層170的材料包含環氧樹脂。In some embodiments, since the display element 100 with the encapsulation adhesive layer 170 needs to be placed on the support plate 210, the material of the encapsulation adhesive layer 170 is preferably a material with a higher hardness, such as a Young's modulus greater than 0.1 MPa, which is beneficial to the subsequent transposition process and less likely to deform. In such an embodiment, if the Young's modulus of the encapsulation adhesive layer 170 is less than 0.1 MPa, the hardness of the encapsulation adhesive layer 170 will be too soft and will not be conducive to the subsequent transposition process, for example, it will cause damage to the circuit and reduce the yield. In some embodiments, the Young's modulus of the encapsulation adhesive layer 170 ranges from about 0.1 MPa to about 10 GPa. For example, the material of the encapsulation adhesive layer 170 includes epoxy resin.
如在第9C圖中所示,提供顯示元件與待連接的一支撐板。將多個顯示元件100與待連接的一支撐板210對準。支撐板210包含基底層220和驅動電路層230。顯示元件100的第一線路層140的多個第一電極142對準於支撐板210驅動電路層230的對應的接墊240。As shown in FIG. 9C , a display element and a supporting board to be connected are provided. A plurality of display elements 100 are aligned with a supporting board 210 to be connected. The supporting board 210 includes a base layer 220 and a driving circuit layer 230. A plurality of first electrodes 142 of the first circuit layer 140 of the display element 100 are aligned with corresponding pads 240 of the driving circuit layer 230 of the supporting board 210.
如在第9D圖中所示,將顯示元件與支撐板組裝,形成顯示裝置。多個顯示元件100可設置於支撐板210上方,並且顯示元件100的多個第一電極142與驅動電路層230的接墊240對應且電性連接至在驅動電路層230中的電路元件260,例如,在第9D圖中示出電晶體262。As shown in FIG. 9D , the display element is assembled with the support plate to form a display device. A plurality of display elements 100 may be disposed above the support plate 210 , and a plurality of first electrodes 142 of the display element 100 correspond to the pads 240 of the driving circuit layer 230 and are electrically connected to the circuit element 260 in the driving circuit layer 230 , for example, a transistor 262 is shown in FIG. 9D .
第10A圖至第10B圖繪示根據一些實施方式的形成顯示裝置的方法的多個中間步驟。當多個顯示元件100設置在支撐板210上,相鄰的二個顯示元件100經由間隔120而隔開。10A to 10B illustrate a plurality of intermediate steps of a method for forming a display device according to some embodiments. When a plurality of display elements 100 are disposed on a support plate 210 , two adjacent display elements 100 are separated by a spacer 120 .
在一些實施方式中,在將多個顯示元件連接支撐板之後,可添加另一封裝膠層180於間隔120中。第10B圖繪示將封裝膠層180填入介於相鄰的二個顯示元件100之間的間隔120。In some embodiments, after the display devices are connected to the support board, another encapsulation layer 180 may be added in the space 120. FIG. 10B shows the space 120 between two adjacent display devices 100 being filled with the encapsulation layer 180.
在另一些替代性實施方式中,如在第10C圖中所示,封裝膠層182亦可覆蓋在多個顯示元件100上。也就是說,在顯示裝置200中的發光元件160上方設置有兩層的封裝膠層170和182,第一層的封裝膠層為個別的顯示元件100的封裝膠層170,並且各個顯示元件100的封裝膠層170是隔開的。第二層的封裝膠層為在各個顯示元件100上方及介於多個顯示元件100之間的間隔120的封裝膠層182。In some alternative embodiments, as shown in FIG. 10C , the encapsulation layer 182 may also cover a plurality of display elements 100. That is, two layers of encapsulation layers 170 and 182 are disposed above the light-emitting element 160 in the display device 200, the first layer of encapsulation layer is the encapsulation layer 170 of the individual display element 100, and the encapsulation layers 170 of the various display elements 100 are separated. The second layer of encapsulation layer is the encapsulation layer 182 above each display element 100 and in the spacer 120 between the plurality of display elements 100.
在一些實施方式中,封裝膠層180和182的材料可相同於封裝膠層170的材料。在另一些實施方式中,封裝膠層180和182的材料可與封裝膠層170的材料不同。In some embodiments, the material of the encapsulation adhesive layers 180 and 182 may be the same as the material of the encapsulation adhesive layer 170. In other embodiments, the material of the encapsulation adhesive layers 180 and 182 may be different from the material of the encapsulation adhesive layer 170.
參見第11A圖至第11D圖,繪示根據一些實施方式的形成顯示裝置的方法的多個中間步驟。11A to 11D, which illustrate several intermediate steps of a method for forming a display device according to some implementations.
如在第11A圖中所示,將多個發光元件設置於接收板上。接收板130包含絕緣層132及貫孔134。在接收板130的下表面136設置有第一線路層140,並且在接收板130的上表面138設置有第二線路層150。在一些實施方式,可經由巨量轉移的技術,將複數個發光元件160設置於接收板130上並接合於對應的多個第二電極152。因此,各個發光元件160的第一部份162A(例如陽極)和第二部份162B(例如陰極)電性連接對應的第二電極152、貫孔134、和第一電極142。As shown in FIG. 11A , a plurality of light emitting elements are disposed on a receiving board. The receiving board 130 includes an insulating layer 132 and a through hole 134. A first circuit layer 140 is disposed on a lower surface 136 of the receiving board 130, and a second circuit layer 150 is disposed on an upper surface 138 of the receiving board 130. In some embodiments, a plurality of light emitting elements 160 may be disposed on the receiving board 130 and bonded to a plurality of corresponding second electrodes 152 by mass transfer technology. Therefore, a first portion 162A (e.g., an anode) and a second portion 162B (e.g., a cathode) of each light emitting element 160 are electrically connected to the corresponding second electrode 152, the through hole 134, and the first electrode 142.
如在第11B圖中所示,提供包含多個發光元件的接收板與待連接的一支撐板。將多個包含發光元件160的接收板130與待連接的一支撐板210對準。支撐板210包含基底層220及驅動電路層230。驅動電路層230包含接墊240以及電路元件250和260。第一線路層140的多個第一電極142分別對準於支撐板210的驅動電路層230的對應的接墊240。As shown in FIG. 11B , a receiving board including a plurality of light-emitting elements and a supporting board to be connected are provided. A plurality of receiving boards 130 including a plurality of light-emitting elements 160 are aligned with a supporting board 210 to be connected. The supporting board 210 includes a base layer 220 and a driving circuit layer 230. The driving circuit layer 230 includes a pad 240 and circuit elements 250 and 260. The plurality of first electrodes 142 of the first circuit layer 140 are respectively aligned with the corresponding pads 240 of the driving circuit layer 230 of the supporting board 210.
第11C圖繪示將包含多個發光元件的接收板與支撐板進行組裝,形成中間結構270。多個發光元件160的接收板與支撐板210連接,形成中間結構270。第一線路層140的多個第一電極142分別連接支撐板210的對應的接墊240。FIG. 11C shows that the receiving plate including a plurality of light emitting elements is assembled with the supporting plate to form the intermediate structure 270. The receiving plates of the plurality of light emitting elements 160 are connected to the supporting plate 210 to form the intermediate structure 270. The plurality of first electrodes 142 of the first circuit layer 140 are respectively connected to the corresponding pads 240 of the supporting plate 210.
第11D圖繪示將封裝膠層設置於此中間結構上方,亦即在發光元件、接收板和第二線路層上方。封裝膠層170設置在中間結構270上方,亦即在發光元件160、接收板130、和第二線路層150上方。經由設置封裝膠層170,在支撐板210上形成具有封裝膠層170的顯示元件100。FIG. 11D shows that a packaging layer is disposed on the intermediate structure, that is, on the light-emitting element, the receiving board, and the second circuit layer. The packaging layer 170 is disposed on the intermediate structure 270, that is, on the light-emitting element 160, the receiving board 130, and the second circuit layer 150. By disposing the packaging layer 170, the display element 100 having the packaging layer 170 is formed on the supporting board 210.
第12A圖至第12B圖繪示根據一些實施方式的形成顯示裝置的方法的多個中間步驟。多個包含發光元件160的接收板130設置在支撐板210上,相鄰的二個接收板130經由間隔120而隔開。12A and 12B illustrate a plurality of intermediate steps of a method for forming a display device according to some embodiments: A plurality of receiving plates 130 including light emitting elements 160 are disposed on a supporting plate 210 , and two adjacent receiving plates 130 are separated by a spacer 120 .
第12B圖繪示將封裝膠層設置於發光元件、接收板和第二線路層上方並填入間隔內。封裝膠層170覆蓋中間結構270,亦即覆蓋發光元件160、接收板130、和第二線路層150並且填入間隔120中。因此,在支撐板210上形成多個顯示元件100,經由間隔120而隔開,並且間隔120填充有封裝膠層170。也就是說,多個顯示元件100和介於顯示元件100之間的間隔120具有一共同的封裝膠層170。FIG. 12B shows that a packaging layer is disposed above the light-emitting element, the receiving board, and the second circuit layer and filled in the space. The packaging layer 170 covers the intermediate structure 270, that is, covers the light-emitting element 160, the receiving board 130, and the second circuit layer 150 and fills in the space 120. Therefore, a plurality of display elements 100 are formed on the support board 210, separated by the space 120, and the space 120 is filled with the packaging layer 170. That is, the plurality of display elements 100 and the space 120 between the display elements 100 have a common packaging layer 170.
在本揭示內容所提供的多個實施方式中,經由將多個發光元件晶粒轉移至一接收板,並且將包含發光元件晶粒的多個較小尺寸的接收板與支撐板組裝成較大尺寸的顯示面板,這可減少眾多發光元件晶粒的轉移時間。In multiple implementations provided in the present disclosure, multiple light-emitting device dies are transferred to a receiving plate, and multiple smaller receiving plates and supporting plates containing the light-emitting device dies are assembled into a larger display panel, which can reduce the transfer time of multiple light-emitting device dies.
此外,經由調整覆蓋在顯示元件中的封裝膠層的熱膨脹係數以及接收板的絕緣層的熱膨脹係數的比值,可減少接收板中介於絕緣層與貫孔的金屬層之間發生剝離的現象,因此可提昇所形成的顯示元件和顯示裝置的良率。In addition, by adjusting the ratio of the thermal expansion coefficient of the packaging glue layer covering the display element and the thermal expansion coefficient of the insulating layer of the receiving board, the peeling phenomenon between the insulating layer and the metal layer of the through hole in the receiving board can be reduced, thereby improving the yield of the formed display element and display device.
雖然本揭示內容已以多個實施方式和實施例揭露如上,然其並非用以限定本揭示內容,任何熟習此技藝者,在不脫離本揭示內容之精神和範圍內,當可作各種之更動與潤飾,因此本揭示內容之保護範圍當視後附之申請專利範圍所界定者為準。Although the present disclosure has been disclosed in a plurality of embodiments and examples as above, they are not intended to limit the present disclosure. Anyone skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the scope defined in the attached patent application.
100:顯示元件100: Display component
110:像素單元110: Pixel unit
120:間隔120: Interval
130:接收板130: receiving board
132:絕緣層132: Insulation layer
134:貫孔134: Perforation
136:下表面136: Lower surface
138:上表面138: Upper surface
140:第一線路層140: First circuit layer
142:第一電極142: First electrode
150:第二線路層150: Second circuit layer
152:第二電極152: Second electrode
160:發光元件160: Light-emitting element
162A:第一部份162A: Part 1
162B:第二部份162B: Part 2
170:封裝膠層170: Encapsulation glue layer
180:封裝膠層180: Encapsulation glue layer
182:封裝膠層182: Encapsulation glue layer
200:顯示裝置200: Display device
210:支撐板210:Support plate
220:基底層220: Base layer
230:驅動電路層230: Drive circuit layer
240:接墊240:Pad
250:電路元件250: Circuit components
260:電路元件260: Circuit components
262:電晶體262: Transistor
270:中間結構270:Intermediate structure
300A、300B:介面300A, 300B: Interface
302A、302B:介面302A, 302B: Interface
332:絕緣層332: Insulation layer
334A、334B、334C、334D:貫孔334A, 334B, 334C, 334D: Through hole
342A、342B、342C、342D:第二電極342A, 342B, 342C, 342D: second electrode
400A、400B:介面400A, 400B: Interface
402A、402B:介面402A, 402B: Interface
432:絕緣層432: Insulation layer
434A、434B、434C、434D:貫孔434A, 434B, 434C, 434D: Through hole
442A、442B、442C、442D:第二電極442A, 442B, 442C, 442D: second electrode
為讓本揭示內容之上述和其他目的、特徵、優點與實施方式能更明顯易懂,所附圖式之說明如下。 第1A圖是根據一些實施方式的顯示元件的上視圖。 第1B圖是根據一些實施方式的包含多個顯示元件的顯示裝置的上視圖。 第2A圖是根據一些實施方式的顯示元件的截面視圖。 第2B圖是根據一些實施方式在第2A圖中的第一線路層的上視圖。 第2C圖是根據一些實施方式在第2A圖中的第二線路層的上視圖。 第3A圖是根據應力模擬測試的圖,示出在接收板中介於絕緣層及貫孔的金屬層之間的介面剪應力與在上方的封裝膠層的熱膨脹係數的關係。 第3B圖是根據應力的模擬測試的圖,示出在接收板中介於絕緣層及貫孔的金屬層之間的介面張應力與在上方的封裝膠層的熱膨脹係數的關係。 第4A圖是根據一比較例的剪應力分佈圖,示出在接收板中介於絕緣層與四個貫孔之間的剪應力分佈情況。 第4B圖是在第4A圖中的靠近右下方的貫孔處的放大圖。 第5A圖是根據一比較例的張應力分佈圖,示出在接收板中介於絕緣層與四個貫孔之間的張應力分佈情況。 第5B圖是在第5A圖中的靠近右下方的貫孔處的放大圖。 第6A圖是根據一實施例的剪應力分佈圖,示出在接收板中介於絕緣層與四個貫孔之間的剪應力分佈情況。 第6B圖是在第6A圖中的靠近右下方的貫孔處的放大圖。 第7A圖是根據一實施例的張應力分佈圖,示出在接收板中介於絕緣層與四個貫孔之間的張應力分佈情況。 第7B圖是在第7A圖中的靠近右下方的貫孔處的放大圖。 第8圖是根據一些實施方式的顯示裝置的局部截面視圖。 第9A至第9D圖是根據一些實施方式在製造顯示裝置的方法的多個中間步驟的多個中間結構的截面視圖。 第10A至第10B圖是根據一些實施方式在製造顯示裝置的方法的多個中間步驟的多個中間結構的截面視圖。 第10C圖是根據一替代性實施方式的一中間結構的截面視圖。 第11A至第11D圖是根據一些實施方式在製造顯示裝置的方法的多個中間步驟的多個中間結構的截面視圖。 第12A至第12B圖是根據一些實施方式在製造顯示裝置的方法的多個中間步驟的多個中間結構的截面視圖。 To make the above and other purposes, features, advantages and embodiments of the present disclosure more clearly understandable, the attached drawings are described as follows. FIG. 1A is a top view of a display element according to some embodiments. FIG. 1B is a top view of a display device including a plurality of display elements according to some embodiments. FIG. 2A is a cross-sectional view of a display element according to some embodiments. FIG. 2B is a top view of a first circuit layer in FIG. 2A according to some embodiments. FIG. 2C is a top view of a second circuit layer in FIG. 2A according to some embodiments. FIG. 3A is a diagram based on a stress simulation test, showing the relationship between the interface shear stress between the metal layer of the insulating layer and the through hole in the receiving board and the thermal expansion coefficient of the packaging glue layer above. FIG. 3B is a diagram based on a stress simulation test, showing the relationship between the interface tensile stress between the insulating layer and the metal layer of the through hole in the receiving plate and the thermal expansion coefficient of the packaging glue layer above. FIG. 4A is a shear stress distribution diagram based on a comparative example, showing the shear stress distribution between the insulating layer and the four through holes in the receiving plate. FIG. 4B is an enlarged view of the through hole near the lower right of FIG. 4A. FIG. 5A is a tensile stress distribution diagram based on a comparative example, showing the tensile stress distribution between the insulating layer and the four through holes in the receiving plate. FIG. 5B is an enlarged view of the through hole near the lower right in FIG. 5A. FIG. 6A is a shear stress distribution diagram according to an embodiment, showing the shear stress distribution between the insulating layer and the four through holes in the receiving plate. FIG. 6B is an enlarged view of the through hole near the lower right in FIG. 6A. FIG. 7A is a tensile stress distribution diagram according to an embodiment, showing the tensile stress distribution between the insulating layer and the four through holes in the receiving plate. FIG. 7B is an enlarged view of the through hole near the lower right in FIG. 7A. FIG. 8 is a partial cross-sectional view of a display device according to some embodiments. Figures 9A to 9D are cross-sectional views of multiple intermediate structures in multiple intermediate steps of a method for manufacturing a display device according to some embodiments. Figures 10A to 10B are cross-sectional views of multiple intermediate structures in multiple intermediate steps of a method for manufacturing a display device according to some embodiments. Figure 10C is a cross-sectional view of an intermediate structure according to an alternative embodiment. Figures 11A to 11D are cross-sectional views of multiple intermediate structures in multiple intermediate steps of a method for manufacturing a display device according to some embodiments. Figures 12A to 12B are cross-sectional views of multiple intermediate structures in multiple intermediate steps of a method for manufacturing a display device according to some embodiments.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None
100:顯示元件 100: Display component
130:接收板 130: Receiver board
132:絕緣層 132: Insulation layer
134:貫孔 134: Through hole
136:下表面 136: Lower surface
138:上表面 138: Upper surface
140:第一線路層 140: First circuit layer
142:第一電極 142: First electrode
150:第二線路層 150: Second circuit layer
152:第二電極 152: Second electrode
160:發光元件 160: Light-emitting element
162A:第一部份 162A: Part 1
162B:第二部份 162B: Part 2
170:封裝膠層 170: Encapsulation glue layer
Claims (19)
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|---|---|---|---|---|
| TW201709551A (en) * | 2015-04-02 | 2017-03-01 | 日亞化學工業股份有限公司 | Light emitting device and method of manufacturing same |
| US20180190867A1 (en) * | 2015-06-30 | 2018-07-05 | Lg Innotek Co., Ltd. | Light-emitting device and light-emitting device package including the same |
| TW202310471A (en) * | 2021-08-30 | 2023-03-01 | 友達光電股份有限公司 | Display assembly, display device including the same and manufacturing method of display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201709551A (en) * | 2015-04-02 | 2017-03-01 | 日亞化學工業股份有限公司 | Light emitting device and method of manufacturing same |
| US20180190867A1 (en) * | 2015-06-30 | 2018-07-05 | Lg Innotek Co., Ltd. | Light-emitting device and light-emitting device package including the same |
| TW202310471A (en) * | 2021-08-30 | 2023-03-01 | 友達光電股份有限公司 | Display assembly, display device including the same and manufacturing method of display device |
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