TWI848424B - Thermal imaging lens - Google Patents
Thermal imaging lens Download PDFInfo
- Publication number
- TWI848424B TWI848424B TW111141890A TW111141890A TWI848424B TW I848424 B TWI848424 B TW I848424B TW 111141890 A TW111141890 A TW 111141890A TW 111141890 A TW111141890 A TW 111141890A TW I848424 B TWI848424 B TW I848424B
- Authority
- TW
- Taiwan
- Prior art keywords
- lens
- thermal imaging
- imaging lens
- thermal
- sensing element
- Prior art date
Links
- 238000001931 thermography Methods 0.000 title claims abstract description 82
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 4
- 230000001681 protective effect Effects 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000002861 polymer material Substances 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 3
- 229920000642 polymer Polymers 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 6
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 4
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Images
Landscapes
- Lens Barrels (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
本發明是有關於一種感測裝置,且特別是有關於一種熱成像鏡頭。The present invention relates to a sensing device, and in particular to a thermal imaging lens.
一般常見的溫度感應器有熱電偶(thermocouple, TC)、熱敏電阻(thermistor)、電阻溫度偵測器(resistance temperature detectors, RTDs)或紅外線熱電堆感測器(thermopile sensor, TP)等等。其中,熱電偶是一對由兩種不同金屬所製成的接面所組成。電阻溫度偵測器是具有電阻的溫度感測器,會在溫度變化時同時改變電阻值。而紅外線熱電堆感測器則採用晶片級封裝。此非接觸式感測器使用熱電堆吸收從被量測物體發射的紅外線能量,然後利用熱電堆電壓的相對應變化判定物體的溫度。Common temperature sensors include thermocouples (TC), thermistors, resistance temperature detectors (RTDs) or infrared thermopile sensors (TP). Among them, a thermocouple is composed of a pair of junctions made of two different metals. A resistance temperature detector is a temperature sensor with resistance, which changes its resistance value when the temperature changes. Infrared thermopile sensors use chip-level packaging. This non-contact sensor uses a thermopile to absorb infrared energy emitted from the object being measured, and then uses the corresponding change in the thermopile voltage to determine the temperature of the object.
隨著生產工藝的進展,新的半導體熱感晶片如溫度感應半導體金屬氧化物(Temperature Complementary Metal-Oxide-Semiconductor, TMOS)也陸續問世,這些熱感測器往往需要額外鏡片組以因應各種視角或物距的應用,而光學軸與感測器感測晶片的對心是重要的。特別是當應用時需要多個感測晶片時,有效的光學軸對心是需要另外調整。然而,目前現有的熱感影像鏡頭模組多為定焦鏡頭,且傳統熱感感測模組紅外感測鏡片多為長焦且多區視場角複合式鏡片,此多區視場角的光學系統體積大,且存在許多盲區。With the advancement of production technology, new semiconductor thermal chips such as Temperature Complementary Metal-Oxide-Semiconductor (TMOS) have also been introduced. These thermal sensors often require additional lens sets to cope with various viewing angles or object distances, and the alignment of the optical axis and the sensor chip is important. Especially when multiple sensing chips are required for the application, effective optical axis alignment requires additional adjustment. However, most existing thermal imaging lens modules are fixed-focus lenses, and traditional thermal sensing module infrared sensing lenses are mostly telephoto and multi-zone field of view composite lenses. The optical system of this multi-zone field of view is large and has many blind spots.
本發明提供一種熱成像鏡頭,具有較小的體積,且可切換全視場角。The present invention provides a thermal imaging lens with a relatively small size and switchable full field of view angle.
本發明提供一種熱成像鏡頭,包括鏡座、熱感測元件、鏡筒以及至少一透鏡。熱感測元件配置於鏡座。鏡筒可動性地配置於鏡座。至少一透鏡,配置於鏡筒。其中,鏡座與鏡筒的材料包括金屬或高分子材料。至少一透鏡的材料包括高分子材料或透熱玻璃。熱感測元件由積體製程形成,且鏡筒藉由調整至少一透鏡與感測元件的距離改變熱成像鏡頭的全視場角。The present invention provides a thermal imaging lens, including a lens base, a thermal sensing element, a lens barrel and at least one lens. The thermal sensing element is disposed on the lens base. The lens barrel is movably disposed on the lens base. At least one lens is disposed on the lens barrel. The lens base and the lens barrel are made of metal or polymer material. The material of at least one lens is made of polymer material or heat-transmitting glass. The thermal sensing element is formed by an integrated process, and the lens barrel changes the full field of view of the thermal imaging lens by adjusting the distance between at least one lens and the sensing element.
在本發明的一實施例中,上述的至少一透鏡對波長為大於等於7微米且小於等於14微米的光穿透率大於20%。In one embodiment of the present invention, the transmittance of the at least one lens is greater than 20% for light with a wavelength greater than or equal to 7 microns and less than or equal to 14 microns.
在本發明的一實施例中,上述部份鏡座及/或部份鏡筒對紅外線的吸收度大於80%。In one embodiment of the present invention, the absorption rate of the above-mentioned part of the lens base and/or part of the lens barrel to infrared rays is greater than 80%.
在本發明的一實施例中,上述的至少一透鏡的光學有效區域的最小厚度小於等於0.8毫米。In one embodiment of the present invention, the minimum thickness of the optically effective area of the at least one lens is less than or equal to 0.8 mm.
在本發明的一實施例中,上述的熱感測元件為溫度感應半導體金屬氧化物感測器。In one embodiment of the present invention, the thermal sensing element is a temperature sensing semiconductor metal oxide sensor.
在本發明的一實施例中,上述的熱成像鏡頭滿足以下條列式:4≦R≦1,其中R為熱成像鏡頭的最大全視場角與最小全視場角的比值。In one embodiment of the present invention, the thermal imaging lens satisfies the following equation: 4≦R≦1, where R is the ratio of the maximum full field of view angle to the minimum full field of view angle of the thermal imaging lens.
在本發明的一實施例中,上述的熱成像鏡頭的全視場角滿足以下條列式:FOV=aS 2+bS+c,-2 mm≦S≦2 mm,其中FOV為熱成像鏡頭的全視場角,S為熱成像鏡頭的位移,且a、b及c為常數。 In one embodiment of the present invention, the full field of view of the thermal imaging lens satisfies the following equation: FOV=aS 2 +bS+c, -2 mm≦S≦2 mm, where FOV is the full field of view of the thermal imaging lens, S is the displacement of the thermal imaging lens, and a, b and c are constants.
在本發明的一實施例中,上述的熱成像鏡頭符合:6.306 < a < 10.8以及-30.95 < b < -25.88。In one embodiment of the present invention, the above-mentioned thermal imaging lens meets the following conditions: 6.306 < a < 10.8 and -30.95 < b < -25.88.
在本發明的一實施例中,上述的熱成像鏡頭的全視場角滿足以下條列式:FOV= dL 2+eL+f,0.5 mm≦L≦4 mm,其中FOV為熱成像鏡頭的全視場角,L為熱成像鏡頭的BFL,且d、e、f為常數。 In one embodiment of the present invention, the full field of view of the thermal imaging lens satisfies the following equation: FOV = dL 2 +eL+f, 0.5 mm≦L≦4 mm, where FOV is the full field of view of the thermal imaging lens, L is the BFL of the thermal imaging lens, and d, e, and f are constants.
在本發明的一實施例中,上述的熱成像鏡頭符合:6.306 < d < 10.8以及-68.94 < e < -49.28。In one embodiment of the present invention, the above-mentioned thermal imaging lens meets the following conditions: 6.306 < d < 10.8 and -68.94 < e < -49.28.
在本發明的一實施例中,上述的熱感測元件包括平面保護片以及感測晶片,平面保護片配置於感測晶片且與感測晶片之間具有真空間隙。In one embodiment of the present invention, the above-mentioned thermal sensing element includes a planar protective film and a sensing chip. The planar protective film is disposed on the sensing chip and has a vacuum gap between the planar protective film and the sensing chip.
在本發明的一實施例中,上述的熱成像鏡頭滿足以下條列式:EFL>TTL,其中EFL為熱成像鏡頭的等校焦距,且TTL為至少一透鏡至熱感測元件的長度。In one embodiment of the present invention, the thermal imaging lens satisfies the following condition: EFL>TTL, wherein EFL is the equal correction focal length of the thermal imaging lens, and TTL is the length from at least one lens to the thermal sensing element.
在本發明的一實施例中,上述的熱成像鏡頭滿足以下條列式:EFL>BFL,其中EFL為熱成像鏡頭的等校焦距,且BFL為至少一透鏡的後焦距。In one embodiment of the present invention, the thermal imaging lens satisfies the following condition: EFL>BFL, wherein EFL is the equal correction focal length of the thermal imaging lens, and BFL is the back focal length of at least one lens.
基於上述,在本發明的熱成像鏡頭中,熱成像鏡頭包括鏡座、配置於鏡座的熱感測元件、可動性地配置於鏡座的鏡筒以及配置於鏡筒的至少一透鏡。其中,熱感測元件由積體製程形成,且鏡筒藉由調整至少一透鏡與熱感測元件的距離改變熱成像鏡頭的全視場角。如此一來,可實現較小的體積,且可切換而取得不同的全視場角。Based on the above, in the thermal imaging lens of the present invention, the thermal imaging lens includes a lens holder, a thermal sensing element disposed on the lens holder, a lens barrel movably disposed on the lens holder, and at least one lens disposed on the lens barrel. The thermal sensing element is formed by an integrated process, and the lens barrel changes the full field of view of the thermal imaging lens by adjusting the distance between the at least one lens and the thermal sensing element. In this way, a smaller volume can be achieved, and different full field of view angles can be obtained by switching.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more clearly understood, embodiments are specifically cited below and described in detail with reference to the accompanying drawings.
圖1A至圖1C分別為本發明一實施例的熱成像鏡頭切換不同全視場角的剖面示意圖。請參考圖1A至圖1C。本實施例提供一種熱成像鏡頭100,包括鏡座110、熱感測元件120、鏡筒130以及至少一透鏡140。熱成像鏡頭100,用以對紅外線進行感測,或用以擷取紅外線以獲得熱成像。此外,本實施例的熱成像鏡頭100為變焦鏡頭模組,可藉由切換而改變不同的全視場角F,進而應用於不同的環境中。FIG. 1A to FIG. 1C are cross-sectional schematic diagrams of a thermal imaging lens switching different full-view angles according to an embodiment of the present invention. Please refer to FIG. 1A to FIG. 1C. This embodiment provides a
圖2為圖1A的熱成像鏡頭的全視場角分佈曲線圖。請參考圖2。需先說明的是,本發明的全視場角是指,信號相對強度大於等於0.5所涵蓋的角度範圍,如圖2所顯示。FIG2 is a full field of view distribution curve of the thermal imaging lens of FIG1A. Please refer to FIG2. It should be noted that the full field of view of the present invention refers to the angle range covered by the relative signal intensity greater than or equal to 0.5, as shown in FIG2.
請繼續參考圖1A至圖1C。熱感測元件120配置於鏡座110,且熱感測元件120由積體製程形成。在本實施例中,熱感測元件120為溫度感應半導體金屬氧化物感測器(Temperature Complementary Metal Oxide Semiconductor, TMOS)。此外,在本實施例中,熱感測元件120包刮平面保護片以及感測晶片(未顯示),其中平面保護片配置於感測晶片,且平面保護片與感測晶片之間具有真空間隙。因此,可進一步提升熱感測品質。Please continue to refer to FIG. 1A to FIG. 1C. The
更進一步地,在一些實施例中,熱感測元件120可包括感測單元、校正單元以及隔熱結構,其中感測單元為上述的溫度感應半導體金屬氧化物,而校正單元的種類與數量相同於感測單元。惟不同的地方在於,隔熱結構覆蓋校正單元,用以隔絕外界的熱源(或稱紅外線)。隔熱結構例如為金屬,但本發明並不限制其種類。因此,當進行感測時,可比對校正單元所感測獲得的背景資訊對感測單元進行校正,進而可獲得特定波段的紅外光信號強度,進而提升熱感測元件120的感測品質。然而,本發明並不限於此。Furthermore, in some embodiments, the
至少一透鏡140配置於鏡筒130,其中,至少一透鏡140的材料包括高分子材料或透熱玻璃。舉例而言,在本實施例中,透鏡140的數量為一個,但本發明並不限於此,且透鏡140對波長為大於等於7微米且小於等於14微米的光穿透率大於20%。此外,在本實施例中,透鏡140的光學有效區域的最小厚度小於等於0.8毫米,但本發明並不限於此。At least one
鏡筒130可動性地配置於鏡座110,且鏡筒130藉由調整透鏡140與熱感測元件120的距離改變熱成像鏡頭100的全視場角F。鏡座110與鏡筒130的材料包括金屬或高分子材料。在本實施例中,鏡座110及/或部份鏡筒130的材質為吸收紅外線材質,例如是選用對紅外線的吸收度大於80%的材料,但本發明並不限於此。詳細而言,在本實施例中,鏡座110為一圍繞壁結構,圍繞一內部空間,用以容納熱感測元件120。鏡筒130嵌設於圍繞壁結構的內側,且藉由結構設計可在鏡座110上沿光軸移動而改變位置。舉例而言,在本實施例中,鏡座110的圍繞壁內側以及鏡筒130外側具有相互匹配的螺紋結構A,因此使用者可藉由旋轉鏡筒130進行組裝及調整位置。The
圖3為圖1A的熱成像鏡頭切換全視場角的表現曲線圖。請參考圖3。又舉例而言,在本實施例中,旋轉鏡筒130以調整將透鏡140至熱感測元件120的距離D為1.82公厘(mm)時,熱成像鏡頭100的全視場角F為25度,如圖1A所顯示。若旋轉鏡筒130以調整將透鏡140至熱感測元件120的距離D為1.57公厘(mm)時,熱成像鏡頭100的全視場角F將可提升至45度,如圖1B所顯示。若再旋轉鏡筒130以調整將透鏡140至熱感測元件120的距離D為1.32公厘(mm)時,熱成像鏡頭100的全視場角F將可提升至60度,如圖1C所顯示。如此一來,鏡筒130可藉由調整透鏡140與熱感測元件120的距離D而取得不同的全視場角F,如圖3所顯示。FIG3 is a graph showing the performance of the thermal imaging lens of FIG1A when switching the full field of view. Please refer to FIG3. For another example, in this embodiment, when the
圖4為圖1A的熱成像鏡頭的工作原理示意圖。請參考圖2。呈上段落說明,更進一步地說明,本實施例利用透鏡140與焦點之間的位置相異(例如等效焦距F1>後焦距F2),故各個視角的聚光點夠大且均有效涵蓋熱感測元件120的感測區域。因此,當位移量為正值,且有效收光面積仍在原熱感測元件120的感測區域尺寸時,則等效全視場角F將變小。而當位移量為負值時,且有效收光面積仍在原熱感測元件120的感測區域尺寸時,此時等效全視場角F將變大。如此一來,調動標誌的中心點C可以實現不同全視場角F的結果。FIG4 is a schematic diagram of the working principle of the thermal imaging lens of FIG1A. Please refer to FIG2. The above paragraphs further illustrate that the present embodiment utilizes the different positions between the
在本實施例中,熱成像鏡頭100滿足以下條列式:4≦R≦1,其中R為熱成像鏡頭100的最大全視場角F與最小全視場角F的比值。在本實施例中,熱成像鏡頭100滿足以下條列式:EFL>TTL,其中EFL為熱成像鏡頭100的等校焦距F1,且TTL為至少一透鏡140至熱感測元件120的距離D。此外,在本實施例中,熱成像鏡頭100還滿足以下條列式:EFL>BFL,其中BFL為至少一透鏡140的後焦距F2。更進一步地,在本實施例中,熱成像鏡頭100的全視場角F可滿足以下條列式:FOV=aS
2+bS+c,-2 mm≦S≦2 mm,其中FOV為熱成像鏡頭100的全視場角F,S為熱成像鏡頭100的位移,且a、b及c為常數。在較佳的實施例中,6.306 < a < 10.8且-30.95 < b < -25.88。此外,在本實施例中,熱成像鏡頭100的全視場角F還可滿足以下條列式:FOV=dL
2+eL+f,0.5 mm≦L≦4 mm,其中L為熱成像鏡頭100的後焦距F2,且d、e、f為常數。在較佳的實施例中,熱成像鏡頭100符合:6.306 < d < 10.8以及-68.94 < e < -49.28。藉由上述的各種條件式,可使得熱成像鏡頭100具有更佳的光學品質及熱感測/成像品質。然而,本發明並不限於此。
In the present embodiment, the
綜上所述,在本發明的熱成像鏡頭中,熱成像鏡頭包括鏡座、配置於鏡座的熱感測元件、可動性地配置於鏡座的鏡筒以及配置於鏡筒的至少一透鏡。其中,熱感測元件由積體製程形成,且鏡筒藉由調整至少一透鏡與熱感測元件的距離改變熱成像鏡頭的全視場角。如此一來,可實現較小的體積,且可切換而取得不同的全視場角。In summary, in the thermal imaging lens of the present invention, the thermal imaging lens includes a lens holder, a thermal sensing element disposed on the lens holder, a lens barrel movably disposed on the lens holder, and at least one lens disposed on the lens barrel. The thermal sensing element is formed by an integrated process, and the lens barrel changes the full field of view of the thermal imaging lens by adjusting the distance between the at least one lens and the thermal sensing element. In this way, a smaller volume can be achieved, and different full field of view angles can be obtained by switching.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above by the embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.
100:電子裝置 110:鏡座 120:熱感測元件 130:鏡筒 140:透鏡 A:螺紋結構 C:中心點 D:距離 F:全視場角 F1:等校焦距 F2:後焦距 100: Electronic device 110: Lens mount 120: Thermal sensor 130: Lens barrel 140: Lens A: Thread structure C: Center point D: Distance F: Full field of view F1: Equi-calibration focal length F2: Back focal length
圖1A至圖1C分別為本發明一實施例的熱成像鏡頭切換不同全視場角的剖面示意圖。 圖2為圖1A的熱成像鏡頭的全視場角分佈曲線圖。 圖3為圖1A的熱成像鏡頭切換全視場角的表現曲線圖。 圖4為圖1A的熱成像鏡頭的工作原理示意圖。 Figures 1A to 1C are cross-sectional schematic diagrams of a thermal imaging lens switching different full-view angles according to an embodiment of the present invention. Figure 2 is a full-view angle distribution curve diagram of the thermal imaging lens of Figure 1A. Figure 3 is a performance curve diagram of the thermal imaging lens of Figure 1A switching full-view angle. Figure 4 is a schematic diagram of the working principle of the thermal imaging lens of Figure 1A.
100:電子裝置 110:鏡座 120:熱感測元件 130:鏡筒 140:透鏡 A:螺紋結構 D:距離 F:全視場角 100: Electronic device 110: Lens mount 120: Thermal sensing element 130: Lens barrel 140: Lens A: Thread structure D: Distance F: Full field of view
Claims (11)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111141890A TWI848424B (en) | 2022-11-02 | 2022-11-02 | Thermal imaging lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111141890A TWI848424B (en) | 2022-11-02 | 2022-11-02 | Thermal imaging lens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202419917A TW202419917A (en) | 2024-05-16 |
| TWI848424B true TWI848424B (en) | 2024-07-11 |
Family
ID=92074051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111141890A TWI848424B (en) | 2022-11-02 | 2022-11-02 | Thermal imaging lens |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI848424B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200512478A (en) * | 2002-04-01 | 2005-04-01 | Raytheon Co | Fixed focus, optically athermalized, diffractive infrared zoom objective lens |
| US20170139182A1 (en) * | 2015-11-13 | 2017-05-18 | Duvas Technologies Limited | Optical alignment apparatuses and methods for optics used in absorption cell spectrometers |
| CN212933124U (en) * | 2020-10-15 | 2021-04-09 | 东莞市玖洲光学有限公司 | Thermal imaging lens for super-infrared wavelength coating |
-
2022
- 2022-11-02 TW TW111141890A patent/TWI848424B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200512478A (en) * | 2002-04-01 | 2005-04-01 | Raytheon Co | Fixed focus, optically athermalized, diffractive infrared zoom objective lens |
| US20170139182A1 (en) * | 2015-11-13 | 2017-05-18 | Duvas Technologies Limited | Optical alignment apparatuses and methods for optics used in absorption cell spectrometers |
| CN212933124U (en) * | 2020-10-15 | 2021-04-09 | 东莞市玖洲光学有限公司 | Thermal imaging lens for super-infrared wavelength coating |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202419917A (en) | 2024-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103033909B (en) | Infrared optical system and infrared imaging device | |
| US6133569A (en) | Thermal infrared camera | |
| TWI651519B (en) | Temperature measurement correction method, electronic system and method for generating corrected regression coefficient table | |
| CN102591012B (en) | Infrared optical system and infreared imaging device | |
| US6999243B2 (en) | Fixed focus, optically athermalized, diffractive infrared zoom objective lens | |
| US9052235B2 (en) | Infrared sensor and use of same | |
| CN102645821B (en) | Optical arrangement of infrared camera | |
| KR102752630B1 (en) | Micro bolometer and thermal imaging camera module haivng the same | |
| TWI848424B (en) | Thermal imaging lens | |
| RU2148802C1 (en) | Device for detection of heat radiation | |
| TWI836659B (en) | Thermal sensing module | |
| US5203631A (en) | Narrow spectral band pyrometry | |
| TWI851004B (en) | Infrared thermal imaging lens module and infrared thermal imaging apparatus | |
| JP3103338B2 (en) | Radiation thermometer | |
| JP6800000B2 (en) | Heating object measurement system | |
| RU2574524C1 (en) | High-speed broadband infrared microbolometric detector | |
| van der Tempel | Thermography of semi-transparent materials by a FLIR ThermaCAM SC3000 infrared camera | |
| Schuster et al. | Two-lens designs for modern uncooled and cooled IR imaging devices | |
| US12393013B2 (en) | Direct thermal infrared vision via nanophotonic detector design | |
| JP7441621B2 (en) | infrared measurement system | |
| JP2012173167A (en) | Infrared camera | |
| Hanaoka et al. | Evaluation of temperature measurement using 80× 32 silicon-on-insulator diode uncooled infrared focal plane array | |
| JPS629229A (en) | Laser power meter | |
| SE542640C2 (en) | Gas sensor with thermopile | |
| JP2025163320A (en) | Infrared lens, infrared optical system, and infrared imaging device |