TWI848274B - Routing pattern - Google Patents

Abstract

A routing pattern is provided. The routing pattern includes a first routing region, a second routing region and an interconnection region. The first routing region includes a plurality of first conductive lines extending along a first direction. The plurality of first conductive lines has a first pitch along a second direction perpendicular to the first direction. The second routing region includes a plurality of second conductive lines extending along the first direction. The plurality of second conductive lines has a second pitch along the second direction, and the second pitch is approximately equal to the first pitch. The interconnection region includes two body parts and a connecting part connecting to the body parts. The body parts are disposed separately along the first direction. A width of the connecting part along the second direction is smaller than a width of the body parts along the second direction.

Description

Wiring pattern

The present invention relates to wiring patterns, and in particular to wiring patterns formed on semiconductor chips.

The photolithography process is one of the important processes in the manufacture of integrated circuits (ICs). It can be used to transfer the wiring pattern from the mask to the photoresist layer on the surface of the semiconductor chip at a certain ratio, and then transfer the wiring pattern of the integrated circuit to the semiconductor chip. The above-mentioned process for forming the wiring pattern may also include a cleaning step and a drying step using a fluid to remove the residues left by multiple processing steps.

However, as the complexity and integration of integrated circuits increase, the line width and spacing of wiring patterns are also shrinking. Wiring patterns with small line width and spacing are prone to collapse, thereby reducing the reliability and yield of products.

Therefore, it is very important to improve the pattern collapse problem.

The present invention relates to a routing pattern, which can improve the pattern collapse problem and effectively improve the process window of the routing pattern manufacturing process.

According to one embodiment of the present invention, a wiring pattern is provided. The wiring pattern includes a plurality of linear features and an internal connection feature arranged between two of the plurality of linear features. The plurality of linear features extend along a first direction and have a first line width along a second direction. The second direction is perpendicular to the first direction. The internal connection feature includes a concave portion concave along the second direction. The internal connection feature has a second line width along the second direction. The first line width is smaller than the second line width.

According to one embodiment of the present invention, a wiring pattern is provided. The wiring pattern includes a first wiring area, a second wiring area and an internal connection area. The first wiring area includes a plurality of first wires extending along a first direction. The plurality of first wires have a first pitch along a second direction perpendicular to the first direction. The second wiring area includes a plurality of second wires extending along the first direction. The plurality of second wires have a second pitch along the second direction, and the second pitch is substantially equal to the first pitch. The internal connection area includes two main bodies separated and arranged along the first direction, and a connecting part connected to the two main bodies. The width of the connecting part along the second direction is smaller than the width of the two main bodies along the second direction.

In order to better understand the above and other aspects of the present invention, the following is a specific example and a detailed description with the attached drawings.

10,20,30,40,50,60: wiring pattern

101,102: Wiring area

101a,102a: Linear features

101LW, 102LW, 103LW: Line width

101p,102p,103p:Pitch

103,203,403: Internal connection area

103a,203a,403a,503a,603a,907: Internal connection characteristics

104,204,904: Isolation Zone

105,205,405:Through-hole components

110,210,410: Main body

110w,111w:Width

111,211,411:Connection

112,212,412,512,612: concave part

201-1~201-n,401-1~401-n,501-1~501-n,906-1,906-2,906-3: Linear characteristics

203S1,203S2: Side

701: Substrate

702: Insulation layer

703: Unpatterned photoresist layer

801: Photomask

802: Mask pattern

803: Photoresist exposure area

804: Photoresist non-exposure area

960: Patterned photoresist layer

962: Groove

961: Linear photoresist characteristics

905: Conductive material layer

D1,D2: Direction

E1: Extension line

L1, L2: concave length

LW1, LW2, LW3, LW4: Line width

P1,P2,P3,P4: Pitch

VL1, VL2: through hole length

VW1, VW2: through hole width

W1,W2,W3,W4:Width

FIG. 1 is a schematic top view of a wiring pattern according to a first embodiment of the present invention; FIG. 1A is a schematic cross-sectional view of a wiring pattern drawn along an extension line E1 of FIG. 1; FIG. 2 is a schematic top view of a wiring pattern according to a second embodiment of the present invention; FIG. 2A is an enlarged schematic view of a circled portion of FIG. 2; FIG. 3 is a schematic top view of a wiring pattern according to a third embodiment of the present invention; Figure 4 is a schematic top view of a wiring pattern according to the fourth embodiment of the present invention; Figure 4A is an enlarged schematic view of the circled portion of Figure 4; Figure 5 is a schematic top view of a wiring pattern according to the fifth embodiment of the present invention; Figure 6 is a schematic top view of a wiring pattern according to the sixth embodiment of the present invention; and Figures 7-12 are diagrams of a method for forming a wiring pattern according to an embodiment of the present invention.

The following is a related embodiment, which is accompanied by drawings to illustrate in detail the wiring pattern and the manufacturing method thereof proposed in the present invention. However, the present invention is not limited to this. The description in the embodiment, such as the detailed structure, the steps of the manufacturing method and the application of materials, is for illustrative purposes only, and the scope of protection of the present invention is not limited to the described aspects. Those skilled in the relevant technical field can change and modify the structure and manufacturing method of the embodiment without departing from the spirit and scope of the present invention to meet the needs of actual applications. Therefore, other embodiments not proposed in the present invention may also be applicable. Furthermore, the drawings are simplified to facilitate a clear explanation of the contents of the embodiments, and the size ratios in the drawings are not drawn in proportion to the actual product. Therefore, the description and drawings are only used to describe the embodiments and are not intended to limit the scope of protection of the present invention. The same or similar element symbols are used to represent the same or similar elements.

The ordinal numbers used in the specification and patent application, such as "first", "second", "third", etc., are used to modify the components. They do not imply or represent any previous ordinal number of the component, nor do they represent the order of one component and another component, or the order of the manufacturing method. The use of these ordinal numbers is only used to make a component with a certain name clearly distinguishable from another component with the same name.

Various embodiments of the present invention may be applied to various wiring patterns. For example, the embodiments may be applied to, but not limited to, conductive lines formed in or on an inter-layer dielectric layer. The wiring pattern may be formed, for example, in a first metal layer (ML1), a second metal layer (ML2), and/or a third metal layer (ML3) in a semiconductor structure.

Please refer to FIG. 1, which is a top view schematic diagram of the wiring pattern 10 according to the first embodiment of the present invention. The wiring pattern 10 includes a wiring area 101, a wiring area 102, and an internal connection area 103. The internal connection area 103 can be arranged between the wiring area 101 and the wiring area 102.

The wiring area 101 may include a plurality of linear features 101a. The plurality of linear features 101a may extend along a first direction D1. The plurality of linear features 101a may be arranged in a dispersed manner. The wiring area 102 may include a plurality of linear features 102a. The plurality of linear features 102a may extend along a first direction D1. The plurality of linear features 102a may be arranged in a dispersed manner. The inner connection area 103 may include an inner connection feature 103a, and the inner connection feature 103a may be arranged between the linear features 101a and the linear features 102a. The inner connection feature 103a includes a recess 112. The recess 112 may be, for example, a lateral recess recessed along a second direction D2, and the first direction D1 is perpendicular to the second direction D2. In this embodiment, as shown in FIG. 1 , the opening of the recess 112 is oriented toward the wiring area 102 along the second direction D2. However, the present invention is not limited thereto, and the opening of the recess 112 may be oriented toward the wiring area 101 along the second direction D2.

Specifically, the internal connection feature 103a of the internal connection area 103 may include two main parts 110 and a connecting part 111 disposed between the two main parts 110. The two main parts 110 may be disposed separately from each other along the first direction D1. The two main parts 110 may be disposed so as not to overlap each other in the second direction D2. The connecting part 111 may connect the two main parts 110. The main part 110 may have a width 110w along the second direction D2, and the connecting part 111 may have a width 111w along the second direction D2, and the width 111w of the connecting part 111 may be smaller than the width 110w of the main part 110. The difference in width between the two main parts 110 and the connecting part 111 of the internal connection feature 103a may define a recess 112.

The linear feature 101a has a line width 101LW along the second direction D2. Two adjacent linear features 101a among the plurality of linear features 101a have a pitch 101p along the second direction D2. The linear feature 102a has a line width 102LW along the second direction D2. Two adjacent linear features 102a among the plurality of linear features 102a may have a pitch 102p along the second direction D2. In one embodiment, each linear feature 101a has substantially the same line width; each linear feature 102a has substantially the same line width. In one embodiment, the plurality of linear features 101a have the same pitch; the plurality of linear features 102a have the same pitch. In one embodiment, the line width 101LW of the linear feature 101a may be substantially equal to the line width 102LW of the linear feature 102a. In one embodiment, the pitch 101p of the linear feature 101a may be substantially equal to the pitch 102p of the linear feature 102a. The inner connecting feature 103a has a line width 103LW along the second direction D2. The line width 103LW of the inner connecting feature 103a may be equal to the width 110w of the main body 110. The inner connecting feature 103a and the adjacent linear feature (e.g., the linear feature 102a) may have a pitch 103p along the second direction D2. In one embodiment, the line width 103LW of the interconnect feature 103a may be greater than the line width 101LW of the linear feature 101a and the line width 102LW of the linear feature 102a. In one embodiment, the pitch 103p of the interconnect feature 103a may be greater than the pitch 101p of the linear feature 101a and the pitch 102p of the linear feature 102a. In one embodiment, the pitch 101p and the pitch 102p may be equal to or less than 100 nanometers (nm). The linear features 101a, the linear features 102a and the interconnect feature 103a may include a conductive material, such as a metal. In one embodiment, the linear features 101a and the linear features 102a may be wires.

The wiring pattern 10 may further include an insulating region 104. The insulating region 104 may be disposed between the linear feature 101a, the linear feature 102a, and the internal connection feature 103a. The insulating region 104 may include an insulating material, such as an oxide.

Please refer to FIG. 1 and FIG. 1A simultaneously. FIG. 1A is a schematic cross-sectional view of the wiring pattern 10 drawn along the extension line E1 of FIG. 1. The wiring pattern 10 may further include two through-hole elements 105 disposed in the inner connection area 103. The through-hole elements 105 may be respectively disposed on opposite sides of the connecting portion 111 of the inner connection feature 103a of the inner connection area 103. Specifically, as shown in FIG. 1A, the through-hole elements 105 may be respectively disposed in the main body 110 of the inner connection feature 103a of the inner connection area 103, and may be located in a different layer from the inner connection feature 103a. For example, the through-hole element 105 may be located in a layer above the inner connection feature 103a and directly contact the main body 110. The through-hole element 105 may include a conductive material, such as a metal. In one embodiment, the through-hole element 105 can be used to provide electrical connection between layers. The interconnection area of the wiring pattern of the present invention may include more than one interconnection feature and/or interconnection features of different types. The second to sixth embodiments will be used as examples to illustrate.

Please refer to FIG. 2 and FIG. 2A at the same time. FIG. 2 is a schematic top view of the wiring pattern 20 according to the second embodiment of the present invention, and FIG. 2A is an enlarged schematic view of the circled portion of FIG. 2. The wiring pattern 20 may include a plurality of linear features 201-1, 201-2, 201-3, 201-4, 201-5, 201-6, 201-7, 201-8, ..., 201-n extending along the first direction D1, and an internal connection area 203 arranged between the plurality of linear features 201-1~201-n. The plurality of linear features 201-1~201-n may be arranged, for example, substantially parallel to each other. The area outside the internal connection area 203 in the wiring pattern 20 may be understood as one or more wiring areas.

The inner connection area 203 may include at least one inner connection feature 203a disposed between any two linear features, such as disposed between the linear feature 201-3 and the linear feature 201-6, or disposed between the linear feature 201-6 and the linear feature 201-9. The inner connection feature 203a disposed between the linear feature 201-3 and the linear feature 201-6 is used as an example for explanation below, and other inner connection features 203a can be deduced in the same way.

The internal connection feature 203a includes a recess 212. The recess 212 may be, for example, a lateral recess that is recessed along the second direction D2. As shown in FIG. 2A , the recess 212 may be recessed from the first side 203S1 of the internal connection feature 203a toward the second side 203S2 along the second direction D2, and the first side 203S1 is opposite to the second side 203S2. Specifically, the internal connection feature 203a of the internal connection area 203 may include two main bodies 210 and a connecting portion 211 disposed between the two main bodies 210. The two main bodies 210 may be disposed separately from each other along the first direction D1. The two main bodies 210 may be configured so as not to overlap each other in the second direction D2. The connecting portion 211 may connect the two main bodies 210. The width W1 of the main body 210 in the second direction D2 may be greater than the width W2 of the connecting portion 211 in the second direction D2. The difference in width between the two main bodies 210 and the connecting portion 211 of the inner connection feature 203a may define a recess 212. In one embodiment, the distance between the bottom and the second side 203S2 of the recess 212 in the second direction D2 may be equal to the width W2 of the connecting portion 211 in the second direction D2. Linear features 201-1~201-n and inner connection feature 203a may include conductive materials, such as metal. In one embodiment, the linear features 201-1~201-n may be conductive wires.

The wiring pattern 20 may include two through-hole elements 205 configured in the inner connection area 203. The two through-hole elements 205 may be respectively configured in the two main parts 210 of the inner connection feature 203a of the inner connection area 203, and are located on opposite sides of the connecting part 211 of the inner connection feature 203a of the inner connection area 203. The two through-hole elements 205 may be respectively configured on opposite sides of the recess 212. The through-hole element 205 and the inner connection feature 203a may be located in different layers. For example, the through-hole element 205 may be located in a layer above the inner connection feature 203a and directly contact the main part 210. The through-hole element 205 may include a conductive material, such as a metal. In one embodiment, the through-hole element 205 may be used to provide electrical connection between layers.

As shown in FIG. 2A , the linear feature 201-3 has a line width LW1 along the second direction D2. Two adjacent linear features among the plurality of linear features 201-1 to 201-n (e.g., between the linear feature 201-2 and the linear feature 201-3) have a pitch P1 along the second direction D2. In one embodiment, each of the plurality of linear features 201-1 to 201-n has substantially the same line width, and the pitches between two adjacent linear features among the plurality of linear features 201-1 to 201-n are substantially equal. The inner connection feature 203a has a line width LW2 along the second direction D2. The line width LW2 of the inner connection feature 203a may be equal to the width W1 of the main body 210. The inner connection feature 203a and the adjacent linear feature (e.g., the linear feature 201-3) may have a pitch P2 along the second direction D2. In one embodiment, the line width LW2 of the inner connection feature 203a may be greater than the line width LW1 of the linear feature 201-3. In one embodiment, the pitch P2 may be greater than the pitch P1. The width W2 of the connecting portion 211 may be greater than or equal to the line width LW1 of the linear feature 201-3. In one embodiment, the line width LW1 of the linear feature 201-3 may be equal to or less than 50 nanometers. The pitch P1 may be equal to or less than 100 nanometers. In one embodiment, the line width LW2 of the internal connection feature 203a may be equal to or less than 150 nanometers, but the present invention is not limited thereto.

The recess 212 of the inner connection feature 203a has a recess length L1 along the first direction D1. The recess length L1 may be, for example, between 2 and 4 times the line width LW1 of the linear feature 201-3.

The through-hole element 205 has a through-hole length VL1 along the first direction D1, and the through-hole length VL1 may be, for example, between 2 and 3 times the line width LW1 of the linear feature 201-3. The through-hole element 205 has a through-hole width VW1 along the second direction D2, and the through-hole width VW1 may be, for example, between 1 and 2 times the line width LW1 of the linear feature 201-3. In one embodiment, the through-hole width VW1 of the through-hole element 205 may be approximately 1.5 times the line width LW1 of the linear feature 201-3.

The wiring pattern 20 may further include an insulating region 204. The insulating region 204 may be disposed between the linear features 201-1 to 201-n and the internal connection feature 203a. The insulating region 204 may include an insulating material, such as an oxide.

In one embodiment, the wiring pattern 20 may include multiple internal connection features with recess openings facing different directions. For example, in FIG. 2, the recess 212 of the internal connection feature 203a between the linear feature 201-3 and the linear feature 201-6 opens toward the positive second direction D2 (or toward the right side of the figure), and the recess opening of the internal connection feature 203a between the linear feature 201-6 and the linear feature 201-9 opens toward the negative second direction D2 (or toward the left side of the figure). The wiring pattern of the present invention may include any number of multiple internal connection features with recess openings facing different directions or multiple internal connection features with recess openings facing the same direction. For example, as shown in FIG. 3, the internal connection area 203 of the wiring pattern 30 may include multiple internal connection features 203a, and the openings of the recesses 212 of the multiple internal connection features 203a face the same direction.

Please refer to FIG. 4 and FIG. 4A at the same time. FIG. 4 is a schematic top view of the wiring pattern 40 according to the fourth embodiment of the present invention, and FIG. 4A is an enlarged schematic view of the circled portion of FIG. 4. The difference between the wiring pattern 40 and the wiring pattern 20 is that the number of recesses included in each inner connection feature 403a of the inner connection region 403 of the wiring pattern 40 can be greater than the number of recesses included in each inner connection feature 203a of the inner connection region 203 of the wiring pattern 20, and the number of through-hole components 405 arranged in each inner connection feature 403a in the wiring pattern 40 can be greater than the number of through-hole components 205 arranged in each inner connection feature 203a in the wiring pattern 20.

The wiring pattern 40 may include a plurality of linear features 401-1, 401-2, 401-3, ..., 401-n extending along the first direction D1, and an internal connection area 403 arranged between the plurality of linear features 401-1~401-n. The plurality of linear features 401-1~401-n may be arranged substantially parallel to each other. In one embodiment, the linear features 401-1~401-n may be, for example, conductive wires, and the area outside the internal connection area 403 may be understood as one or more wiring areas. The linear features 401-1~401-n of the wiring pattern 40 may be similar to the linear features 201-1~201-n of the wiring pattern 20.

The inner connection area 403 may include at least one inner connection feature 403a disposed between any two linear features, for example, disposed between the linear feature 401-2 and the linear feature 401-5, or disposed between the linear feature 401-5 and the linear feature 401-8. The inner connection feature 403a disposed between the linear feature 401-2 and the linear feature 401-5 is used as an example for explanation below, and other inner connection features 403a can be analogized in the same way. The inner connection feature 403a includes two recesses 412. The recess 412 may be, for example, a lateral recess recessed along the second direction D2. The two recesses 412 may be disposed in a dispersed manner. The two recesses 412 may not overlap in the second direction D2. In this embodiment, the openings of the two recesses 412 of the inner connection feature 403a face the same direction. The internal connection feature 403a of the internal connection area 403 may include three main parts 410 and two connecting parts 411 arranged between the three main parts 410. The three main parts 410 may be arranged separately from each other along the first direction D1. The three main parts 410 may be arranged so as not to overlap each other in the second direction D2. The connecting part 411 may connect two adjacent main parts 410. As shown in FIG. 4A, the width W3 of the main part 410 in the second direction D2 may be greater than the width W4 of the connecting part 411 in the second direction D2. The difference in width between the main part 410 and the connecting part 411 may define a recess 412. The linear features 401-1~401-n and the internal connection feature 403a may include conductive materials, such as metal. In one embodiment, the linear features 401-1~401-n may be conductive lines.

The wiring pattern 40 may include three through-hole elements 405 arranged in the inner connection area 403. The three through-hole elements 405 may be respectively arranged in the three main parts 410 of the inner connection feature 403a of the inner connection area 403, and are located on opposite sides of the connection part 411 of the inner connection feature 403a of the inner connection area 403. The three through-hole elements 405 and the two recesses 412 of the inner connection feature 403a may be arranged alternately along the first direction D1. The through-hole element 405 and the inner connection feature 403a may be located in different layers. For example, the through-hole element 405 may be located in a layer above the inner connection feature 403a and directly contact the main part 410. The through-hole element 405 may include a conductive material, such as metal. In one embodiment, via element 405 may be used to provide electrical connections between layers.

As shown in FIG. 4A , the linear feature 401-2 has a line width LW3 along the second direction D2. Two adjacent linear features among the plurality of linear features 401-1 to 401-n (e.g., between the linear feature 401-1 and the linear feature 401-2) have a pitch P3 along the second direction D2. In one embodiment, each of the plurality of linear features 401-1 to 401-n has substantially the same line width, and the pitches between two adjacent linear features among the plurality of linear features 401-1 to 401-n are substantially equal. The inner connection feature 403a has a line width LW4 along the second direction D2. The line width LW4 of the inner connection feature 403a may be equal to the width W3 of the main body 410. The inner connection feature 403a and the adjacent linear feature (e.g., the linear feature 401-2) may have a pitch P4 along the second direction D2. In one embodiment, the line width LW4 of the inner connection feature 403a may be greater than the line width LW3 of the linear feature 401-2. In one embodiment, the pitch P4 may be greater than the pitch P3. The width W4 of the connecting portion 411 may be greater than or equal to the line width LW3 of the linear feature 401-2. In one embodiment, the line width LW3 of the linear feature 401-2 may be equal to or less than 50 nanometers. The pitch P3 may be equal to or less than 100 nanometers. In one embodiment, the line width LW4 of the internal connection feature 403a may be equal to or less than 150 nanometers, but the present invention is not limited thereto.

The concave portion 412 of the inner connection feature 403a has a concave portion length L2 along the first direction D1, and the concave portion length L2 may be, for example, between 2 and 4 times the line width LW3 of the linear feature 401-2. The sizes of the two concave portions 412 of the inner connection feature 403a may be the same or different from each other.

The through-hole element 405 has a through-hole length VL2 along the first direction D1, and the through-hole length VL2 may be between 2 and 3 times the line width LW3 of the linear feature 401-2. The through-hole element 405 has a through-hole width VW2 along the second direction D2, and the through-hole width VW2 may be between 1 and 2 times the line width LW3 of the linear feature 401-2. In one embodiment, the through-hole width VW2 of the through-hole element 405 may be approximately 1.5 times the line width LW3 of the linear feature 401-2.

Please refer to FIG. 5, which is a schematic top view of a wiring pattern 50 according to the fifth embodiment of the present invention. The difference between wiring pattern 50 and wiring pattern 40 is that the openings of the two recesses 412 of a single internal connection feature 403a of wiring pattern 40 face the same side, while the openings of the two recesses 512 of a single internal connection feature 503a of wiring pattern 50 face different sides.

The wiring pattern 50 includes a plurality of linear features 501-1 to 501-n and an internal connection area arranged between the plurality of linear features 501-1 to 501-n. The plurality of linear features 501-1 to 501-n of the wiring pattern 50 may be similar to the linear features 201-1 to 201-n of the wiring pattern 20 and/or the linear features 401-1 to 401-n of the wiring pattern 40. The internal connection area may include at least one internal connection feature 503a arranged between any two linear features. The internal connection feature 503a includes two recesses 512, and the openings of the two recesses 512 face different directions. The recess 512 may be, for example, a lateral recess that is recessed along the second direction D2. The two recesses 512 may be arranged dispersedly from each other. The two recesses 512 may not overlap in the second direction D2.

In one embodiment, the internal connection feature 403a included in the wiring pattern 40 shown in FIG. 4 and the internal connection feature 503a included in the wiring pattern 50 shown in FIG. 5 can be used in a wiring pattern, as shown in FIG. 6. FIG. 6 is a schematic top view of a wiring pattern 60 according to a sixth embodiment of the present invention. In this embodiment, the wiring pattern 60 simultaneously includes the internal connection feature 403a (the opening of the concave portion thereof faces the same side) and the internal connection feature 503a (the opening of the concave portion thereof faces different sides). The wiring pattern 60 may further include the internal connection feature 603a. The difference between the internal connection feature 603a and the internal connection feature 403a is that the openings of the two concave portions of the internal connection feature 403a are both oriented toward the positive second direction D2 (or toward the right side of the figure), while the openings of the two concave portions 612 of the internal connection feature 603a are both oriented toward the negative second direction D2 (or toward the left side of the figure). The internal connection area of the wiring pattern of the present invention may include a plurality of internal connection features that are dispersedly arranged between a plurality of linear features, and may include any combination of the above-mentioned different types of internal connection features (e.g., internal connection features 103a, 203a, 403a, 503a, 603a).

Figures 7-12 illustrate a method for forming a wiring pattern according to an embodiment of the present invention.

Please refer to Figure 7. An insulating layer 702 and an unpatterned photoresist layer 703 are formed on a substrate 701.

Please refer to Figures 8-9. The unpatterned photoresist layer 703 is exposed using a photomask 801 to form a photoresist exposure area 803 and a photoresist non-exposure area 804 corresponding to the photomask pattern 802. After an appropriate baking step, the photoresist exposure area 803 and the photoresist non-exposure area 804 are treated with a developer, and then the photoresist exposure area 803 is removed through steps such as cleaning and spin drying, thereby defining a plurality of linear photoresist features 961 (e.g., corresponding to the photoresist non-exposure area 804) and a plurality of grooves 962 (e.g., corresponding to the photoresist exposure area 803), forming a patterned photoresist layer 960.

Next, the insulating layer 702 is etched through the trenches 962 in the patterned photoresist layer 960 to remove a portion of the insulating layer 702, and the patterned photoresist layer 960 on the insulating layer 702 is removed (for example, through a dry photoresist stripping process or a wet photoresist stripping process), forming an insulating region 904 as shown in FIG. 10. Referring to FIG. 11, a deposition process is performed on the structure shown in FIG. 10 to form a conductive material layer 905 on the insulating region 904. In one embodiment, the conductive material layer 905 may include copper. Next, the structure shown in FIG. 11 is subjected to chemical-mechanical planarization (CMP) processing to remove part of the conductive material layer 905, thereby forming linear features 906-1, 906-2, 906-3 and an internal connection feature 907, as shown in FIG. 12.

In one embodiment, by implementing the method of Figures 7-12 above, a wiring pattern as shown in Figures 1-6 can be formed. The position of the linear photoresist feature in the patterned photoresist layer can correspond to the position of the insulating region of the wiring pattern. The position of the groove in the patterned photoresist layer can correspond to the position of the linear feature and the internal connection feature of the wiring pattern. The linear photoresist feature in the patterned photoresist layer can include a photoresist convex portion, and the photoresist convex portion can complement the shape of the concave portion of the internal connection feature of the wiring pattern.

The wiring pattern usually includes a wiring area with densely arranged linear features or wires, and an internal connection area with internal connection features to configure various semiconductor components, such as through-hole components. The line width of the internal connection features in the internal connection area is usually larger than the line width of the linear features in the wiring area to facilitate the configuration of semiconductor components. However, such inconsistent line width configuration may cause the photoresist pattern to collapse during the cleaning and spin-drying process of the photoresist development due to uneven force on the photoresist pattern, thereby affecting the electrical yield and reliability.

In the wiring pattern of the present invention, the interconnect feature in the interconnect area includes a concave portion, which can improve the pattern collapse problem caused by uneven force. In addition, in the process of forming the interconnect feature including the concave portion of the present invention, the linear photoresist feature used to form the wiring pattern includes a photoresist convex portion whose shape complements the concave portion of the internal connection feature. This configuration can further prevent the linear photoresist feature from collapsing due to uneven force on both sides (for example, the cleaning liquid on both sides of the linear photoresist feature has inconsistent liquid level heights on both sides during the dynamic process of spinning, resulting in uneven force on both sides of the photoresist), and can avoid the problem of defective wiring pattern caused by pattern collapse. Therefore, the present invention can effectively reduce the pattern collapse problem, and can improve process margin, product reliability and yield. The size of the recess of the present invention can solve the pattern collapse problem without affecting the installation space of through-hole components. It is also applicable to dense patterns, especially fine patterns with a pitch equal to or less than 100 nanometers.

In summary, although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Those with common knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of the patent application attached hereto.

10: Wiring pattern

101,102: Wiring area

101a,102a: Linear features

101LW, 102LW, 103LW: Line width

101p,102p,103p:Pitch

103: Internal connection area

103a: Internal connection characteristics

104: Isolation Zone

105:Through-hole components

110: Main body

110w,111w:Width

111: Connection part

112: Concave part

D1,D2: Direction

E1: Extension line

Claims (9)

A wiring pattern includes: a first wiring area, including a plurality of first wires extending along a first direction, the first wires having a first pitch along a second direction perpendicular to the first direction; a second wiring area, including a plurality of second wires extending along the first direction, the second wires having a second pitch along the second direction, the second pitch being substantially equal to the first pitch; and an inner connection area, including two The main bodies are separated and arranged along the first direction, and a connecting part connected to the main bodies, the connecting part has a width along the second direction that is smaller than a width of the main bodies along the second direction, wherein the inner connection area is arranged between the first wiring area and the second wiring area along the second direction, the first pitch and the second pitch are equal to or smaller than 100 nanometers, and one side of the main bodies is aligned with one side of the connecting part in the first direction. The wiring pattern as described in claim 1, wherein the main parts and the connecting parts of the inner connection area define a recess, and the opening of the recess faces the first wiring area or the second wiring area along the second direction. The wiring pattern as described in claim 1 also includes two through-hole components, and the through-hole components are respectively arranged in the main parts of the internal connection area. A wiring pattern includes: A plurality of linear features extending along a first direction and having a first line width along a second direction, the second direction being perpendicular to the first direction; and an internal connection feature disposed between two of the linear features, the internal connection feature comprising a recessed portion recessed along the second direction, two main portions disposed separately along the first direction, and a connecting portion connected to the main portions, the connecting portion having a width along the second direction smaller than a width of the main portions along the second direction, the internal connection feature having a second line width along the second direction, the first line width being smaller than the second line width, the first line width being equal to or smaller than 50 nanometers, and a side of the main portions being aligned with a side of the connecting portion in the first direction. A wiring pattern as described in claim 4, wherein the concave portion of the inner connection feature is concave from a first side of the inner connection feature toward a second side along the second direction, the first side is relative to the second side, and a distance between the bottom of the concave portion and the second side is greater than or equal to the first line width. A wiring pattern as described in claim 4, wherein the recess of the internal connection feature has a recess length along the first direction, and the recess length is between 2 and 4 times the first line width. The wiring pattern as described in claim 4 further includes two through-hole components arranged on the inner connection feature, and the through-hole components are arranged on opposite sides of the recess of the inner connection feature. A wiring pattern as described in claim 4, wherein the internal connection feature includes two recesses, and the recesses do not overlap in the second direction. The wiring pattern as described in claim 8 further includes three through-hole elements arranged in the internal connection feature, and the through-hole elements and the recesses of the internal connection feature are arranged alternately along the first direction.

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