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TWI848168B - 成膜裝置及成膜方法 - Google Patents

成膜裝置及成膜方法 Download PDF

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Publication number
TWI848168B
TWI848168B TW109128356A TW109128356A TWI848168B TW I848168 B TWI848168 B TW I848168B TW 109128356 A TW109128356 A TW 109128356A TW 109128356 A TW109128356 A TW 109128356A TW I848168 B TWI848168 B TW I848168B
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Taiwan
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gas
film
silicon nitride
nitride film
substrate
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TW109128356A
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TW202123339A (zh
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小川淳
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日商東京威力科創股份有限公司
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    • H10P14/6532—
    • H10P14/6339—
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
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    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract

本發明之課題為以填埋基板表面所形成的凹部圖案之方式來成膜出矽氮化膜時，可無間隙地填埋凹部圖案。
一種成膜方法，係於表面形成有凹部圖案的基板成膜出矽氮化膜之成膜方法，包含以下工序：分別將含有矽之原料氣體與會將該原料氣體氮化之氮化氣體供應至儲存有該基板之處理容器內，而沿著該基板的表面來形成共形的矽氮化膜之工序；在停止朝該處理容器內之矽原料氣體的供應之狀態下，將用以將該矽氮化膜整形之經電漿化後的整形用氣體供應至該基板，而以膜厚會從凹部圖案的底部側朝上部側變薄之方式來讓該矽氮化膜收縮之工序；以及，交互地反覆進行形成該矽氮化膜之工序與讓該矽氮化膜收縮之工序，以將矽氮化膜填埋在該凹部圖案之工序。

Description

成膜裝置及成膜方法
本發明係關於一種成膜裝置及成膜方法。
在半導體裝置之製造工序中會將例如Si3N4(以下表示為氮化矽或SiN)膜等各種膜成膜在例如基板(即半導體晶圓，以下稱作晶圓)。此成膜處理係藉由交互且複數次地將例如原料氣體與反應氣體供應至晶圓而被稱作ALD(Atomic Layer Deposition)等之方法來進行。作為進行ALD之成膜裝置，例如專利文獻1所揭示般地已知有一種裝置，係構成為將晶圓載置於真空容器內所設置之旋轉台，來讓藉由該旋轉台的旋轉而公轉中之晶圓反複通過被供應有原料氣體之氛圍所構成的處理區域與被供應有反應氣體之氛圍所構成的處理區域。又，除了該等原料氣體的氛圍及反應氣體的氛圍以外，亦將會將膜改質之改質氣體供應至旋轉台上來形成被分別供應有反應氣體及改質氣體之特定區域。另外，區劃該等處理區域般地形成被供應有分離氣體之分離區域。
在成膜出上述般SiN膜時，例如專利文獻1所揭示般地，會有以填埋晶圓表面所形成的凹陷圖案之方式來成膜出SiN膜的情況，而被要求須以凹陷圖案內部不會產生被稱作孔隙或裂縫的間隙之方式來進行填埋。
[先前技術文獻] [專利文獻]
專利文獻1：日本特開2019-33229號公報
本發明係鑑於上述般情事而完成的發明，係提供一種以填埋基板表面所形成的凹部圖案之方式來成膜出矽氮化膜時，可無間隙地填埋凹部圖案之技術。
本發明之成膜裝置係以填埋凹部圖案之方式來於表面形成有該凹部圖案的基板成膜出矽氮化膜之成膜方法，包含有：
沿著基板的表面形狀來於形成有該凹部圖案之基板成膜出共形的矽氮化膜之工序；以及
將電漿供應至成膜有該共形的矽氮化膜之基板，而以膜厚會從凹部圖案的底部側朝上部側變薄之方式來讓該矽氮化膜收縮之工序。
本發明係提供一種以填埋基板表面所形成的凹部圖案之方式來成膜出矽氮化膜時，可無間隙地填埋凹部圖案之技術。
依據本發明，當以填埋基板表面所形成的凹部圖案之方式來進行成膜時，便可無間隙地填埋凹部圖案。
100:矽基板
101:凹部圖案
102、102A、102B:SiN膜
103:凹部
W:晶圓
圖1係顯示本發明一實施型態相關之成膜裝置一範例之縱剖側視圖。
圖2係顯示前述成膜裝置一範例之橫剖俯視圖。
圖3係顯示前述成膜裝置所設置之氣體供排氣單元一範例之縱剖側視圖。
圖4係顯示前述氣體供排氣單元一範例之仰視圖。
圖5係顯示在各處理區域中所供應的氣體之時序圖。
圖6係顯示進行了成膜處理之晶圓的一表面部分例之剖面圖。
圖7係顯示成膜有共形的SiN膜之晶圓一範例之剖面圖。
圖8係顯示使SiN膜收縮後的晶圓一範例之剖面圖。
圖9係顯示成膜有第2次的共形SiN膜之晶圓一範例之剖面圖。
圖10係顯示使第2次的共形SiN膜收縮後之晶圓一範例之剖面圖。
圖11係顯示於凹部圖案填埋有SiN膜之晶圓一範例之剖面圖。
圖12係顯示表面經研磨後的晶圓一範例之剖面圖。
圖13係顯示將成膜有包含孔隙或裂縫的SiN膜之晶圓表面研磨後的範例之剖面圖。
圖14係顯示本發明實施型態之其他範例相關的成膜裝置之剖面圖。
關於本發明一實施型態相關之成膜裝置，參照圖1之縱剖側視圖及圖2之橫剖俯視圖來加以說明。此成膜裝置係構成為藉由ALD(Atomic Layer Deposition)來於基板(即半導體晶圓，以下記載為晶圓)W的表面形成SiN膜。說明書中，關於氮化矽，係無關於Si及N的化學計量比而記載為SiN。因此，SiN的記載便會包含有例如Si3N4。
成膜裝置係具有為會儲存晶圓W的處理容器之扁平且大致呈圓形的真空容器11，真空容器11係由構成側壁及底部之容器本體11A，以及頂板11B所構成。真空容器11內係設置有會水平地載置直徑300mm的晶圓W之圓形的旋轉台12。圖式中的符號12A為會支撐旋轉台12的內面中央部之支撐部。支撐部12A的下方係設置有旋轉機構13，旋轉台12在成膜處理中係透過支撐部12A而從上方觀看下會繞鉛直軸順時針方向地旋轉。圖式中的符號X係表示旋轉台12的旋轉軸。
如圖2所示，旋轉台12的上面係沿著旋轉台12的圓周方向(旋轉方向)而設置有為晶圓W的載置部之6個圓形凹陷部14，各凹陷部14係收納有晶圓W。亦即，各晶圓W係以會因旋轉台12的旋轉而公轉之方式來被載置於旋轉台12。回到圖1，真空容器11的底部處之旋轉台12的下方係同心圓狀地設置有複數加熱器15，而構成為會加熱旋轉台12所載置之晶圓W。又，如圖2所示，真空容器11的側壁係構成為開口有晶圓W的搬送口16，且藉由閘閥(圖中未顯示)而被開閉自如。真空容器11內面臨搬送口16的位置係成為晶圓W的傳遞位置，對應於該傳遞位置之部位係於旋轉台12的下方側設置有會貫穿凹陷部14而用以從內面來抬舉晶圓W之傳遞用的升降銷及其升降機構(皆未圖示)。然後，晶圓W係透過搬送口16且藉由真空容器11的外部所設置之基板搬送機構(圖中未顯示)而被搬送至傳遞位置，並藉由基板搬送機構與升降銷的協動作用而被傳遞至凹陷部14。
旋轉台12的上方如圖2所示，係繞順時針方向地依序設置有氣體供排氣單元2與電漿形成單元3A~3C。又，真空容器11中之旋轉台12外側的下方且為電漿形成單元3B的外側係開口有排氣口51，該排氣口51係連接於真空排氣部50。
關於氣體供排氣單元2，亦參照為縱剖側視圖之圖3以及為仰視圖之圖4來加以說明。氣體供排氣單元2在俯視觀看下，係形成為會隨著從旋轉台12的中央側朝向周緣側而於旋轉台12的周向變寬之扇狀，氣體供排氣單元2的下面係接近且對向於旋轉台12的上面。
氣體供排氣單元2係由例如鋁所構成，其下面係開口有氣體噴出口21、排氣口22及吹淨氣體噴出口23。圖式中為了容易識別，在圖4中，係以很多的點來表示排氣口22及吹淨氣體噴出口23。氣體噴出口21係複數地配列於較氣體供排氣單元2下面的周緣部要靠內側之扇狀區域24。該氣體噴出口21在成膜處理時之旋轉台12的旋轉中，會將含有矽之原料氣體(即DCS(二氯矽烷：SiH2Cl2)氣體)噴淋狀地噴出至下方，來供應至晶圓W的表面整體。
該扇狀區域24中，係以可將DCS氣體供應至各氣體噴出口21之方式而於氣體供排氣單元2設置有氣體流道25。然後，氣體流道25的上游側係透過配管而連接於DCS氣體的供應源26，各配管係介設有由質流控制器所構成的流量調整部27及閥V27。
接著，針對上述排氣口22及吹淨氣體噴出口23來加以說明。排氣口22及吹淨氣體噴出口23係以圍繞扇狀區域24(參照圖4)且對向於旋轉台12的上面之方式而環狀地開口於氣體供排氣單元2下面的周緣部，吹淨氣體噴出口23係位在排氣口22的外側。旋轉台12上之排氣口22內側的區域係構成會進行DCS朝晶圓W表面的吸附之原料氣體供應區域，即吸附區域R0。吹淨氣體噴出口23會將例如Ar(氬)氣體作為吹淨氣體來噴出至旋轉台12上。
圖3中的符號23A分別為設置於氣體供排氣單元2且被相互區劃之氣體流道。氣體流道23A的上游端係連接於排氣口22，氣體流道23A的下游端係連接於排氣裝置28，藉由該排氣裝置28，便可從排氣口22進行排氣。又，氣體流道23B的下游端係連接於吹淨氣體噴出口23，氣體流道23B的上游端 係連接於Ar氣體的供應源29。連接氣體流道23B與Ar氣體供應源29之配管30係介設有流量調整部20及閥V20。
在成膜處理中會一起進行從氣體噴出口21之原料氣體的噴出、從排氣口22之排氣、以及從吹淨氣體噴出口23之吹淨氣體的噴出。藉此，如圖3中以箭頭所示般地，朝旋轉台12被噴出之原料氣體及吹淨氣體便會在旋轉台12的上面朝向排氣口22並從該排氣口22被排氣。藉由如此般地進行吹淨氣體的噴出及排氣，則吸附區域R0的氛圍便會自外部的氛圍被分離，可限定性地將原料氣體供應至該吸附區域R0。
接著，針對電漿形成單元3A~3C加以說明。電漿形成單元3A、3B的下面側係供應有H2氣體來作為電漿形成用氣體。又，電漿形成單元3C中，除了下面側係供應有會將原料氣體氮化之氮化氣體(即氨(NH3)氣)及氫(H2)氣體來作為電漿形成用氣體以外，幾乎構成為相同。H2氣體係相當於整形用氣體。此處便針對電漿形成單元3C來加以說明。電漿形成單元3C係形成為會隨著從旋轉台12的中心側朝外周側而變寬之略扇狀。如圖1所示，電漿形成單元3A係具有用以供應微波之天線31，該天線31係具有介電體板32與金屬製的導波管33。
導波管33係設置於介電體板32上，且具有沿旋轉台12的直徑延伸之內部空間35。導波管33的下部側係相接於介電體板32般地設置有具備複數槽孔36A之槽縫板。導波管33係連接有微波產生器37，會將例如大約2.45GHz的微波供應至導波管33。
又，電漿形成單元3A係具有會將電漿形成用氣體分別供應至介電體板32的下面側之氣體噴出孔41及氣體噴出孔42。氣體噴出孔41會從旋轉台12的中心部側朝外周部側噴出電漿形成用氣體，氣體噴出孔42則是會從旋轉台12的外周部側朝中心側噴出例如H2氣體及NH3氣體的混合氣體。圖式中的符號43為H2氣體的供應源。圖式中的符號44為NH3氣體的供應源。氣體噴出孔41及氣體噴出孔42係透過具有氣體供應機器45之配管系統40而分別連接於H2氣體供應源43及NH3氣體供應源44。該電漿形成單元3C中，被供應至導波管33之微波會通過槽縫板36的槽孔36A，來將被噴出至該介電體板32的下方之電漿形成用氣體(即NH3及H2的混合氣體)電漿化。又，電漿 形成單元3C係構成為可停止NH3氣體的供應而僅將H2氣體電漿化。又，電漿形成單元3A、3B除了被噴出至介電體板32的下方之電漿形成用氣體為H2氣體以外，係構成為與電漿形成單元3C相同。電漿形成單元3A~3C的下方係分別相當於處理區域R1~R3。
如圖1所示，成膜裝置係設置有電腦所構成的控制部10，控制部10係儲存有程式。該程式係以會將控制訊號傳送至成膜裝置的各部來控制各部的動作以實施後述成膜處理之方式而包含有步驟群。具體而言，旋轉機構13所致之旋轉台12的旋轉數、朝加熱器15之供電等係藉由程式而受到控制。該程式係從硬碟、光碟、磁光碟、記憶卡等記憶媒體而被安裝在控制部10。
接著，針對本發明相關之成膜裝置的作用來加以說明。圖5係顯示吸附區域R0及各處理區域R1~R3中之氣體供應的開啟/關閉、所供應之氣體的種類、以及電漿形成單元3A~3C的開啟/關閉之時序圖。
首先，藉由外部的基板搬送機構(圖中未顯示)且藉由升降銷與基板搬送機構的協動作用來將6片晶圓W傳遞至旋轉台12的各凹陷部14。圖6係顯示被傳遞至旋轉台12之晶圓W的表面部分構造一範例之剖面圖。被進行成膜處理之晶圓W係於矽基板100形成有溝狀的凹部圖案101。該凹部圖案101係形成為線寬10nm~50nm，深度20nm~1000nm，凹部圖案101的寬度係形成為從晶圓W的表面到凹部圖案101的底部是均勻的寬度。
此外，以下的說明書中，晶圓W的表面係指不含凹部圖案101的內面。又，將形成於矽基板100之溝狀的部分稱作「凹部圖案101」，將於凹部圖案101的內周面成膜出SiN膜102而殘留之溝狀的間隙部分稱作「凹部103」。另外，本例中雖是分複數次來將SiN膜102成膜在晶圓W，但係將第1次的成膜工序中所成膜之SiN膜102稱作SiN膜102A，而將第2次的成膜工序中所成膜之SiN膜102稱作SiN膜102B。
當晶圓W被傳遞至各凹陷部14後，便關閉真空容器1的搬送口16所設置之閘閥來使該真空容器1內成為氣密。藉由加熱器7來將凹陷部14所載置之晶圓W加熱至例如250℃以上，更具體為550℃。然後，藉由從排氣口51的排氣來使真空容器1內成為例如壓力2torr(266.6Pa)的真空氛圍，且使旋轉台12繞順時針以例如1rpm~60rpm旋轉。
然後如圖5所示，將H2氣體分別供應至處理區域R1,R2，並將NH3氣體及H2氣體供應至處理區域R3。如此般地供應各氣體，另一方面，藉由各電漿形成單元3A~3C來分別將微波供應至各處理區域R1~R3。藉由該微波而於處理區域R1,R2分別形成有H2氣體的電漿，且於處理區域R3形成有H2氣體及NH3氣體的電漿。又，在氣體供排氣單元2中，分別從氣體噴出口21噴出DCS氣體，從吹淨氣體噴出口23噴出Ar氣體，且從排氣口22來進行排氣。
然後，使旋轉台12旋轉來讓各晶圓W公轉，藉此，當晶圓W位在吸附區域R0後，DCS氣體便會被供應且被吸附在該晶圓W的表面。進一步地，使旋轉台12旋轉而到達處理區域R3後，吸附在晶圓W上之DCS與NH3便會反應而生成為反應生成物之SiN。然後，本例中，當晶圓W通過處理區域R1~R3的下方時，晶圓W會被供應有H2氣體被電漿化而形成的氫活性基，來將晶圓W上殘留的Cl(氯)去取。藉由如此般地持續旋轉台12的旋轉，則晶圓W便會依序複數次地反複通過吸附區域R0及處理區域R1~R3，而於晶圓W的表面沉積有SiN來讓該SiN膜102的膜厚增加。
然後，開始對吸附區域R0及處理區域R1~R3供應各氣體後，使旋轉台12旋轉例如1分鐘，當形成於晶圓W之SiN膜成為所需膜厚後，便停止氣體供排氣單元2中之各DCS氣體的噴出。在停止該DCS氣體之時間點，晶圓W中如圖7所示般地，會於凹部圖案101的內面及晶圓W的表面形成有沿著晶圓W的表面形狀之均勻膜厚的第1次SiN膜102A(共形的SiN膜102)。此外，在此時間點，晶圓W表面之凹部圖案101的上端則是因晶圓W表面所成膜之SiN膜102A而不會被封閉，是開口的。由於第1次SiN膜102A的膜厚為均勻的，故於凹部圖案101內形成SiN膜102A而殘留的間隙部分，即凹部103的形狀亦是從晶圓W的表面到凹部103的底部而為均勻的寬度。
接著，在停止DCS氣體的供應之狀態下，將H2氣體供應至各處理區域R1~R3。再將微波供應至處理區域R1~R3，來將H2氣體活性化且電漿化。在此狀態下，使旋轉台12以例如1rpm~120rpm的旋轉速度旋轉。
藉此，形成於晶圓W的SiN膜102A便會被供應有H2氣體的電漿。如前述般地將H2氣體的電漿供應至SiN膜時，SiN膜102A會被改質，雖然膜中所含的Cl會脫離，但即便是在Cl充分脫離後，若再持續供應H2氣體的電漿， 則SiN膜102A中之成分的脫離仍會進行，來讓膜密度變高並使膜厚慢慢地變薄。
此處，H2氣體的電漿會有較容易失去活性之傾向。於是，將H2氣體的電漿供應至殘留有凹部103的晶圓W時，則凹部103中接近晶圓W的表面之較淺位置的部位便會變得容易被供應有已充分被活性化後之H2氣體的電漿。另一方面，凹部103中較深位置的部位處，H2氣體的電漿在到達較深位置前便會失去活性，而變得不易被供應有經活性化後之H2氣體的電漿。
於是，如圖8所示般地，成膜在凹部圖案101內的SiN膜102A中，晶圓W表面附近之較淺位置的部位相較於凹部圖案101中較深位置的部位，會因H2氣體的電漿而容易進行成分的脫離，便有膜密度變高且膜厚變薄之傾向。然後，會因SiN膜102A從凹部103中的底部側朝上部側而膜厚變薄般地收縮(shrink)，如圖8所示，便會成為愈接近晶圓W表面的位置，則間隙的寬度便愈寬，且隨著變深，則間隙的寬度會愈窄之凹部103。
如此般地使凹部103之晶圓W表面側的膜厚變薄，且使間隙的寬度變寬後，如圖5之時序圖所示般地從氣體供排氣單元2來對吸附區域R0供應DCS氣體。再對各處理區域R2,R3供應H2氣體，對處理區域R1供應NH3氣體及H2氣體，來使處理區域R1~R3產生電漿。在此狀態下，使旋轉台12以和進行上述SiN膜102A的成膜處理時相同的旋轉速度來旋轉相同時間。亦即，再次進行與第1次成膜處理(SiN膜102A的成膜處理)相同的成膜處理。藉此便會沿著形成有凹部103之晶圓W的表面形狀，而藉由第2次成膜處理來保形地成膜有SiN膜102B(圖9)。
然後，在成膜出SiN膜102B後，停止氣體供排氣單元2中之DCS氣體的供應，而將H2氣體供應至處理區域R1~R3且將微波供應至處理區域R1~R3，來將H2氣體活性化且電漿化。在此狀態下，使旋轉台12以和進行上述SiN膜102A的收縮處理時相同的旋轉速度來旋轉相同時間。亦即，再次進行與第1次收縮處理(SiN膜102A的收縮處理)相同的收縮處理。藉此再次對晶圓W供應H2氣體的電漿，關於SiN膜102B，亦是以較晶圓W的表面側而愈接近凹部103的底部側則膜厚便會變得愈薄之方式來讓SiN膜102B收縮(圖10)。如此般地，之後亦反覆進行成膜出共形的SiN膜102之工序，與將H2氣體的 電漿供應至晶圓W來讓SiN膜102收縮之工序。藉此進行凹部圖案101內之SiN膜102的填埋。
以下，針對如上述般地在成膜處理之間挾雜進行收縮處理的理由來加以說明。例如不進行此收縮處理，而以較長時間來進行成膜處理以填埋凹部圖案101。在此情況下，若進行SiN膜102的成膜，則殘留在凹部圖案101內之凹部103便會慢慢地變細。此時，隨著凹部103的寬度變窄，氣體會變得不易進入至凹部103內。藉此，在晶圓W的表面或凹部圖案101的上端側處，SiN膜102雖會成長，但在凹部圖案101的底部側處，便會有變得不易成膜有SiN膜102之情況。其結果，在完全填埋凹部圖案101的底部側前，便會有凹部圖案101的上端因SiN膜102而封閉之情況。此情況下，填埋在凹部圖案101之SiN膜102內便會形成有被稱作孔隙或裂縫之間隙。
然而本實施型態中，是在進行SiN膜102的成膜處理後，且於接著進行SiN膜102的成膜處理前，會先針對所形成之SiN膜102來整形成上部側的收縮率會較下部側的收縮率要來得大。於是，在接下來SiN膜102的成膜處理中，由於凹部103的上端側會變寬，故為成膜氣體之DCS氣體或為氮化氣體之NH3氣體的電漿便會變得容易進入至凹部103內。因此，凹部圖案101上端側的寬度便會較凹部圖案101底部側的寬度而不容易變窄。於是，與先前的成膜處理相同，即便是接下來的成膜處理亦可成膜出共形的SiN膜102，且可抑制凹部103的上端側比底部側而先被封閉，同時於凹部圖案101成膜出SiN膜102。因此，在進行凹部圖案101內之SiN膜102的填埋時，便可防止上述SiN膜102內之孔隙或裂縫的形成。
重複上述成膜處理與收縮處理而進行預先決定的次數，並完成將SiN膜102填埋在凹部圖案101後(圖11)，便停止成膜裝置並藉由外部的基板搬送裝置來將晶圓W搬出。然後，將從成膜裝置被搬出的晶圓W搬送至例如研磨裝置，來如圖12所示般地研磨晶圓W的表面。當填埋在凹部圖案101之SiN膜102中有孔隙或裂縫等間隙的情況，則在進行研磨來去除晶圓W上面的SiN膜102時，如圖13所示般地，便會有該間隙作為凹部104而露出在晶圓W表面的情況。
之後雖會將晶圓W搬送至例如濕蝕刻裝置來進行濕蝕刻處理，但在露出有凹部104的情況，則蝕刻液便會進入至凹部104內，而有形成該凹部104之SiN膜102的壁部被侵蝕的情況。本實施型態相關之成膜方法中，由於可抑制SiN膜102中產生孔隙或裂縫，故在成膜處理後進行研磨工序及濕蝕刻工序的情況，便可抑制上述般SiN膜102的蝕刻。
上述實施型態係重複於形成有凹部圖案101的晶圓W成膜出共形的SiN膜102之工序，以及將電漿供應至晶圓W來讓SiN膜102收縮以使凹部103的剖面形狀成為V字型之工序。於是，便可抑制被填埋在凹部圖案101之SiN膜102中產生間隙，從而可使填埋性變得良好。
本實施型態中，於晶圓W成膜出SiN膜102之工序中，係依序將DCS氣體、NH3氣體的電漿供應至晶圓W來成膜出SiN膜102，再供應H2氣體的電漿來進行SiN膜102的改質。亦即，成膜處理時亦與收縮處理時相同，會將H2電漿供應至晶圓W。但此成膜處理時，由於是一邊成膜出SiN膜一邊進行供應，故關於H2電漿而讓SiN膜102收縮成前述收縮處理時所說明的形狀之作用便會受到抑制，而如前述般地在成膜處理時會成膜出共形的SiN膜102。
雖是如上述般地反覆進行成膜處理與收縮處理，但此重複當中的1次收縮處理中，較佳宜如前述般地例如對晶圓W供應H2氣體的電漿1分鐘以上來讓膜被整形。此外，在後續的成膜處理中，由使得氣體容易進入至凹部103之觀點來看，較佳宜相較於凹部圖案101底部側之SiN膜102的膜厚而使晶圓W表面附近之SiN膜102的膜厚變薄0.2nm以上般地來加以收縮。亦即，較佳宜進行1次收縮處理來使凹部103內收縮率最高之位置的膜厚與收縮率最低之位置的膜厚差如上述般地成為0.2nm以上。又，重複成膜處理與收縮處理當中的1次成膜處理中，較佳宜將共形的SiN膜102成膜為2nm以上的膜厚。
此外，共形的SiN膜102係指無關於凹部圖案101內的深度位置，只要是膜厚大致均勻的膜即可，關於凹部圖案101內每個深度位置之SiN膜102的膜厚，在使得膜厚最厚之部位的膜厚為tmax，膜厚最薄之部位的膜厚為tmin時，則膜厚的比值(tmin/tmax)只要是0.9以上，便可視作共形的SiN膜102。
此外，上述收縮處理的處理條件只要是電漿作用在凹部圖案101的上部側會較凹部圖案101的下部側要來得大即可。因此，較佳宜使用直到失去活性為止的時間會較成膜處理中所使用之NH3氣體的電漿要來得短之氣體的電漿。
然後，關於作用在上述凹部圖案101的上部側會較下部側要來得大之收縮處理的處理條件，並未侷限於使得前述般在收縮處理中會電漿化之氣體與成膜處理中所使用會電漿化之氣體為不同種類的氣體。例如，係供應與收縮處理時被供應至處理區域R1~R3之氣體及成膜處理時被供應至處理區域R1~R3之氣體相同的氣體並電漿化。此外，在成膜處理時與收縮處理時，藉由使得從微波產生器37被供應至導波管33之電力為不同的值，便亦可獲得上述收縮作用。如此般地，在改變電力之情況，例如係使收縮處理時的上述電力較成膜處理時要來得大。
又，亦可取代如上述般地在成膜處理時與收縮處理時改變供應電力，而是改變真空容器1內的壓力。具體而言，係較成膜處理時而更為提高收縮處理時的壓力。此外，改變壓力的情況，會有該變更需要時間等問題。因此，較佳宜使得如上述般地在成膜處理時與收縮處理時會使用不同氣體種類之裝置而成為簡單的構成來提高產能。此外，如上述般地改變供應電力或壓力之情況，在收縮處理時亦是停止朝吸附區域R0之DCS氣體的供應。
又，亦可藉由只會對被儲存在處理容器內的1片晶圓W進行處理之裝置，即枚葉裝置來進行本發明相關的成膜方法。為該枚葉裝置之成膜裝置係具有例如圖14所示之處理容器200，處理容器200內係透過支撐柱204而設置有會略水平地保持晶圓W之載置台203。處理容器200的側面所設置之符號201為晶圓W的搬出入口，符號202為閘閥。處理容器200係透過排氣管205而連接有真空排氣部206。
又，處理容器200的頂面係透過絕緣組件208而設置有用以朝晶圓W供應氣體之金屬製的噴淋頭207。噴淋頭207係構成為連接有DCS氣體供應部211、NH3氣體供應部212及H2氣體供應部213，而可朝載置台203所載置的晶圓W供應各氣體。又，噴淋頭207係透過匹配器210而連接有高頻供應源209，而構成為可在處理容器200內形成高頻電場。上述般之成膜裝置中，亦 是在晶圓W成膜出SiN膜102後可供應H2氣體的電漿，故可獲得相同的效果。此外，只要是能形成上述共形的SiN膜102，則亦可將DCS氣體與NH3氣體同時供應至處理容器200內，而藉由CVD(Chemical Vapor Deposition)來進行成膜處理。又，亦可不將被供應至處理容器200內之NH3氣體電漿化來進行成膜處理。
如以上的說明，本說明書所揭示之實施型態應被認為所有要點僅為例示而非用以限制本發明之內容。上述實施型態可在未背離添附的申請專利範圍及其要旨之範圍內，而以各種型態來做省略、置換或變更。
100:矽基板
101:凹部圖案
102A:SiN膜
103:凹部
W:晶圓

Claims (6)

  1. 一種成膜方法，係於表面形成有凹部圖案的基板成膜出矽氮化膜之成膜方法；該成膜方法包含以下工序：分別將含有矽之原料氣體與會將該原料氣體氮化之氮化氣體供應至儲存有該基板之處理容器內，而沿著該基板的表面來形成共形的矽氮化膜之工序；在停止朝該處理容器內之矽原料氣體的供應之狀態下，將用以將該矽氮化膜整形之經電漿化後的整形用氣體供應至該基板，而以膜厚會從凹部圖案的底部側朝上部側變薄之方式來讓該矽氮化膜收縮之工序；以及交互地反覆進行形成該矽氮化膜之工序與讓該矽氮化膜收縮之工序，以將矽氮化膜填埋在該凹部圖案之工序；在形成該矽氮化膜之工序中供應該整形用氣體；該整形用氣體為經電漿化後的氫氣。
  2. 如申請專利範圍第1項之成膜方法，其中該氮化氣體為經電漿化後的氮化氣體。
  3. 如申請專利範圍第2項之成膜方法，其中該氮化氣體為經電漿化後的氨氣。
  4. 如申請專利範圍第1至3項中任一項之成膜方法，其中成膜出該矽氮化膜之工序係以2nm以上的膜厚來成膜出矽氮化膜；讓該矽氮化膜收縮之工序係使矽氮化膜在該凹部圖案的上部側收縮之膜厚會較矽氮化膜在該凹部圖案的底部側收縮之膜厚要更大0.2nm以上。
  5. 一種成膜裝置，係於表面形成有凹部圖案之基板成膜出矽氮化膜之成膜裝置；該成膜裝置包含：處理容器，係於內部設置有載置有該基板之載置部；原料氣體供應部，係將含有矽之原料氣體供應至該載置部所載置之基板； 氮化氣體供應部，係將會將該原料氣體氮化之氮化氣體供應至該載置部所載置之基板；整形用氣體供應部，係將用以將該矽氮化膜整形之整形用氣體供應至該基板；電漿形成機構，係將被供應至該處理容器內之氣體電漿化；以及控制部，係輸出用以實施以下步驟之控制訊號：分別將該原料氣體與該氮化氣體供應至該處理容器內，而沿著該基板的表面來形成共形的該矽氮化膜之步驟；在停止朝該處理容器內之矽原料氣體的供應之狀態下，將該整形用氣體供應至該處理容器內，並將該整形用氣體電漿化，而以膜厚會從該凹部圖案的底部側朝上部側變薄之方式來讓該矽氮化膜收縮之步驟；以及交互地反覆進行形成該矽氮化膜之步驟與讓該矽氮化膜收縮之步驟，來將該矽氮化膜填埋在該凹部圖案之步驟；在形成該矽氮化膜之工序中供應經電漿化後的該整形用氣體；經電漿化後的該整形用氣體為經電漿化後的氫氣。
  6. 如申請專利範圍第5項之成膜裝置，其中該載置部為會使所載置的基板公轉之旋轉台；於該旋轉台上沿著旋轉台的旋轉方向而相互分離地配置有被供應有原料氣體之第1處理區域，以及氛圍與該第1處理區域分離，且被供應有該氮化氣體及該整形用氣體之第2處理區域；該電漿形成機構會將該第2處理區域中的該氮化氣體及該整形用氣體電漿化；形成該矽氮化膜之步驟為一邊將該原料氣體與經電漿化後的該氮化氣體及經電漿化後的該整形用氣體分別供應至該第1處理區域、該第2處理區域，一邊使該基板公轉之步驟；讓該矽氮化膜收縮之步驟係將經電漿化後的該整形用氣體供應至該第2處理區域之步驟。
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