TWI847454B - Base grounding detection device and method - Google Patents

Abstract

A base grounding detection device, which is arranged in a process cavity of a semiconductor device for semiconductor processing. The base is used for carrying wafers to be processed, and the device comprises a voltage signal acquisition unit, a voltage detection unit and a control unit. The voltage signal acquisition unit is used to acquire the voltage signal of the base; The voltage detection unit is used to receive the voltage signal from the voltage signal acquisition unit, determine whether the base is grounded according to the voltage signal and the preset voltage signal, and when the base is grounded, send the first signal as an output signal to the control unit, and the first signal indicates that the base is grounded; The control unit is used to instruct the semiconductor device to stop executing the process and send an alarm signal when receiving the first signal during the process of executing the process.

Description

Base grounding detection device and method

This application relates to the field of semiconductor manufacturing, and in particular to a base grounding detection device and method.

The magnetron sputtering process is a technology widely used in the field of semiconductor manufacturing. The typical magnetron sputtering process is completed in a high vacuum chamber as shown in Figure 1. The main structure of the chamber includes: chamber wall 9, target material 1, inner liner 2, pressure ring 3, and base 4. These structures mainly constitute the closed environment required for the magnetron sputtering process. Before the magnetron sputtering process, the wafer 7 is placed on the base 4, and then the chamber is evacuated to a vacuum state by the vacuum pump 5. When the chamber reaches the specified vacuum level, the base 4 will rise and lift the pressure ring 3, so that the pressure ring 3 is separated from the inner liner 2, and the base 4 and the pressure ring 3 are suspended (that is, not grounded).

When the susceptor 4 reaches the process position, the control system introduces a specified amount of argon as the process gas into the chamber through the gas inlet 10, and the magnetron sputtering process can be started at this time. Referring to Figure 2, the sputtering power source 8 applies a specified voltage between the chamber wall 9 and the target 1 to ionize the argon in the chamber. At the same time, under the confinement effect of the rotating magnetron 6 on the electrons, the ionized argon ions are moved toward the target 1 (cathode) by the electric field force, and a stable plasma is formed on the lower surface of the target 1. Under the action of electric and magnetic fields, ionized argon ions continuously bombard the surface of the target material 1, causing the target atoms to be sputtered out and fall on the surface of the wafer 7 placed on the base 4, thereby realizing the coating process on the surface of the wafer 7.

At the same time, during the above magnetron sputtering process, free electrons move toward the inner liner 2 (anode), and some of the free electrons will fall on the potential-suspended base 4. A certain amount of free electrons will accumulate on the potential-suspended base 4, forming an electric potential difference between the base 4 and the ground. The greater the power during the process, the more free electrons will accumulate on the base 4.

During the process, if the susceptor 4 is short-circuited with the chamber wall 9 or the inner liner 2, for example, a foreign object appears in the chamber and causes the susceptor 4 to be short-circuited with the chamber wall 9 or the inner liner 2, or the susceptor 4 is mistakenly judged to have reached the process position before the susceptor 4 and the pressure ring 3 are completely separated from the inner liner 2, and the magnetron sputtering process is started, then the susceptor 4 is short-circuited with the chamber wall 9 and the inner liner 2, and the free The electrons will be quickly absorbed by the earth, making the base 4 and the earth at the same potential, and the chamber wall 9 is connected to the earth, which is equivalent to the base 4 becoming the anode, resulting in a current loop between the base 4 and the target 1 (cathode). The current flows through the wafer 7 placed on the base 4, which will cause the components on the wafer 7 to be broken down by the current, seriously affecting the electrical properties of the wafer and the quality of the product. In the existing technology, it is difficult to detect the short circuit between the base 4 and the chamber wall 9 or the inner liner 2 in time during the process. Therefore, it is impossible to detect the abnormal grounding of the base in time and stop the process in time, which affects the quality of the wafer.

The purpose of this application is to provide a method and device that can conveniently and accurately perform base grounding detection.

In one aspect, the present application provides a base ground detection device for use in a semiconductor device, wherein the base is disposed in a process chamber of the semiconductor device for carrying out a semiconductor process, and the base is used to carry a wafer to be processed, and the base ground detection device comprises a voltage signal acquisition unit, a voltage detection unit and a control unit; wherein: the voltage signal acquisition unit is used to acquire a voltage signal of the base; the voltage detection unit is used to receive a voltage signal of the base; The voltage signal from the voltage signal acquisition unit, and according to the voltage signal and the preset voltage signal, determine whether the base is grounded, and when the base is grounded, send the first signal as an output signal to the control unit, the first signal indicating that the base is grounded; the control unit is used to instruct the semiconductor device to stop the process and send an alarm signal when receiving the first signal during the process of the semiconductor device executing the process.

Optionally, the voltage detection unit is specifically used to: receive the voltage signal, and compare the voltage signal with the preset voltage signal. If the absolute value of the voltage signal is less than the preset voltage signal, it is determined that the base is grounded, and the first signal is used as the output signal.

Optionally, the voltage detection unit is also used to: if the absolute value of the voltage signal is greater than the preset voltage signal, determine that the base is not grounded, and use a second signal as the output signal, the second signal indicating that the base is not grounded.

Optionally, the base grounding detection device further includes a pressure unit, which is used to provide a reference voltage signal to the voltage detection unit when there is no voltage signal on the base. The voltage detection unit is used to compare the reference voltage signal with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as the output signal, and the second signal indicates that the base is not grounded.

Optionally, the control unit is further used to record the position of the base as the first position and the second position respectively when receiving the output signal changing from the second signal to the first signal and then changing from the first signal to the second signal, and compare the first position and the second position, and when the first position is lower than the second position, determine that the second position is the lowest process position.

Another aspect of the present application is to provide a base grounding detection method for use in semiconductor equipment, the method comprising: S1, collecting a voltage signal of the base; S2, determining whether the base is grounded based on the voltage signal and a preset voltage signal, and when the base is grounded, using a first signal as an output signal, the first signal indicating that the base is grounded; S3, during the process of executing a process, if the output signal is the first signal, stopping the process and sending an alarm signal.

Optionally, step S2 specifically includes: comparing the voltage signal with the preset voltage signal, if the absolute value of the voltage signal is less than the preset voltage signal, determining that the base is grounded, and using the first signal as the output signal.

Optionally, step S2 further includes: if the absolute value of the voltage signal is greater than the preset voltage signal, determining that the base is not grounded, and using a second signal as the output signal, the second signal indicating that the base is not grounded.

Optionally, the method further includes: when there is no voltage signal on the base, providing a reference voltage signal, and comparing the reference voltage signal with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, determining that the base is not grounded, and using a second signal as the output signal, the second signal indicating that the base is not grounded.

Optionally, the method further includes: when receiving the output signal changing from the second signal to the first signal and then changing from the first signal to the second signal, recording the position of the base as the first position and the second position respectively, and comparing the first position and the second position, and when the first position is lower than the second position, determining the second position as the lowest process position.

The technical solution of this application collects the voltage signal of the base through the voltage signal collection unit, and the voltage detection unit determines whether the base is not grounded according to the voltage signal and the preset voltage signal. When the base is grounded, the first signal indicating that the base is grounded is used as the output signal. When executing the process, once the control unit receives the first signal, it immediately instructs the semiconductor equipment to stop executing the process and sends an alarm signal, so that the grounding condition caused by the short circuit between the base and the chamber wall or the inner liner can be discovered in time, avoiding the occurrence of the wafer to be processed being broken down by the current, thereby seriously affecting the electrical performance of the wafer and affecting the product quality.

1: Target material

2: Lining

3: Pressure ring

4: Base

5: Vacuum system

6: Magnetron

7: Wafer

8: Sputtering power supply

9: Chamber wall

10: Argon

302: Voltage signal acquisition unit

304: Voltage detection unit

306: Control unit

308: Pressurization unit

The present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion.

Figure 1 shows a typical schematic diagram of a high vacuum chamber for performing magnetron sputtering processes.

Figure 2 shows a schematic diagram of the magnetron sputtering process performed in a chamber.

Figure 3 shows a structural block diagram of a base grounding detection device according to an embodiment of the present application.

FIG4 shows a structural block diagram of a base grounding detection device according to an exemplary embodiment of the present application.

Figures 5(a), (b) and (c) show output schematic diagrams of the base grounding detection device corresponding to different states according to the exemplary embodiment of this application.

Figures 6(a) and (b) show schematic diagrams of analysis for determining the lowest process position according to an exemplary embodiment of the present application.

FIG7 shows a flow chart of the base grounding detection method according to an embodiment of the present application.

The following disclosure provides many different embodiments or examples of different components for implementing the present disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, a first component formed above or on a second component in the following description may include embodiments in which the first component and the second component are formed to be in direct contact, and may also include embodiments in which additional components may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the present disclosure may repeatedly reference numbers and/or letters in various examples. This repetition is for the purpose of simplification and clarity and does not in itself indicate the relationship between the various embodiments and/or configurations discussed.

Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein to describe the relationship of one element or component to another element or components as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may be interpreted similarly accordingly.

Although the numerical ranges and parameters setting forth the broad scope of the present disclosure are approximate, the numerical values set forth in the specific examples are reported as accurately as possible. However, any numerical value inherently contains certain errors necessarily due to the standard deviation found in the respective testing measurements. Furthermore, as used herein, the term "approximately" generally means within 10%, 5%, 1% or 0.5% of a given value or range. Alternatively, the term "approximately" means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless otherwise expressly specified, all numerical ranges, quantities, values, and percentages, such as for quantities of materials, durations of time, temperatures, operating conditions, ratios of quantities, and the like disclosed herein, should be understood as being modified in all instances by the term "approximately". Accordingly, unless otherwise indicated, the numerical parameters set forth in the present disclosure and the accompanying claims are approximate values that may vary as necessary. At a minimum, each numerical parameter should be interpreted in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges may be expressed herein as from one end point to another or between two end points. All ranges disclosed herein are inclusive of the end points unless otherwise specified.

Please refer to FIG3. FIG3 shows a block diagram of a base grounding detection device according to an embodiment of the present application. The device is used in a semiconductor device, the base is arranged in a process chamber for performing a semiconductor process in the semiconductor device, and the base is used to carry a wafer to be processed. As shown in FIG3, the base grounding detection device includes a voltage signal acquisition unit 302, a voltage detection unit 304 and a control unit 306.

The voltage signal acquisition unit 302 is used to collect the voltage signal of the base. Optionally, the voltage signal acquisition unit 302 can be electrically connected to the portion of the base 9 exposed outside the chamber to collect the voltage signal of the base. Before the magnetron sputtering process is officially started, the base 9 will gradually rise from the initial position until it reaches the process position. The above-mentioned "portion of the base exposed outside the chamber" refers to the portion of the base 9 that is always exposed outside the chamber during operation and will not rise into the chamber. The voltage signal acquisition unit 302 can be a voltage signal acquisition wire, which can be connected to the base by screws or the like.

The voltage detection unit 304 is used to receive the voltage signal from the voltage signal acquisition unit 302, and determine whether to send the first signal as an output signal to the control unit according to the voltage signal and the preset voltage signal, and the first signal indicates that the base is grounded. In some examples, the voltage signal can be further processed, for example, to meet the control system's requirements for the range of electrical signals, the voltage signal can be divided by a voltage divider circuit, and/or its amplitude can be scaled as needed, and/or it can be inverted, etc., and then determine whether the base is grounded according to the processing result and the above-mentioned preset voltage signal, and when the base is grounded, send the first signal as an output signal to the control unit, which is not limited here.

In some possible implementations, the voltage detection unit 306 is specifically used to receive a voltage signal and compare the voltage signal with a preset voltage signal. If the absolute value of the voltage signal is less than the preset voltage signal, it is determined that the base is grounded, and the first signal is used as an output signal.

In some possible implementations, the voltage detection unit 306 is also used to determine that the base is not grounded if the absolute value of the voltage signal is greater than a preset voltage signal, and to output a second signal as an output signal, the second signal indicating that the base is not grounded.

The control unit 306 is used to instruct the semiconductor device to stop executing the process and send an alarm signal when receiving the first signal during the process of the semiconductor device executing the process.

Technicians in this field can select appropriate preset voltage signals based on actual needs, simulation experiments, etc.

In the above embodiment, the voltage signal of the base is collected by the voltage signal collection unit, and the voltage detection unit determines whether the base is grounded according to the voltage signal and the preset voltage signal. When the base is grounded, the first signal indicating that the base is grounded is used as the output signal. When executing the process, once the control unit receives the first signal, it immediately instructs the semiconductor device to stop executing the process and sends an alarm signal, so that the grounding condition caused by the short circuit between the base and the chamber wall or the inner liner can be discovered in time, avoiding the occurrence of the wafer being broken down by the current, thereby seriously affecting the electrical performance of the wafer and affecting the product quality.

The above terms "first signal" and "second signal" are used to distinguish signals representing different information. In one example, the first signal refers to an electrical signal with an amplitude of the first level, and the second signal refers to an electrical signal with an amplitude of the second level. For example, the first level can be set to a high level and the second level to a low level, or vice versa, the first level can be set to a low level and the second level to a high level, which can conveniently and concisely indicate whether the base is grounded and facilitate subsequent use.

FIG4 shows a block diagram of a base grounding detection device according to an exemplary embodiment of the present application. As shown in FIG4, the device further includes a voltage adding unit 308, which is used to provide a reference voltage signal to the voltage detection unit 304 when there is no voltage signal on the base. The voltage detection unit 304 is also used to compare the reference voltage signal with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as an output signal, and the second signal indicates that the base is not grounded.

In the case where there is no voltage signal on the base, the reference voltage signal will be compared as a substitute voltage signal in the subsequent steps, so that when the base is suspended and has no accumulated charge, the voltage detection unit 304 can also output a second signal, which is clearly distinguished from the first signal indicating that the base is grounded, ensuring that the subsequent control unit 306 can send a correct alarm signal.

The voltage detection unit 304 and the pressure applying unit 308 can be implemented by circuits, which can be integrated on the same circuit board. Personnel skilled in the art can also implement the above-mentioned units by other hardware and/or software methods that they consider suitable, and this application does not limit this.

When a process is performed in the process chamber of a semiconductor device, the pedestal needs to be raised or lowered to a suitable process position. The height of this position should satisfy the following requirements: the pedestal will lift up the pressure ring to separate the pressure ring from the inner liner. In this way, it is necessary to determine the lowest position of the pedestal when performing a process, that is, the lowest process position of the pedestal. How to determine the appropriate lowest process position is also a technical problem in this field. The lowest process position refers to the lowest position of the pedestal allowed by the process execution conditions. We usually take the position of pedestal 4 when pressure ring 3 and inner liner 2 are just separated and pedestal 4 and pressure ring 3 are just in a suspended state as the lowest process position of the chamber for performing magnetron sputtering process. If the lowest process position is set too low, the process cannot be executed normally; if the lowest process position is too high, the adjustable space left for the base 4 when executing different processes will be significantly reduced. The larger the adjustable space, the more processes can be realized in the future. Correspondingly, a small adjustable space will significantly limit the execution of subsequent processes. In the existing technology, it is necessary to open the chamber, connect one end of the multimeter probe to the base 4 and the other end to the chamber wall 9, and manually lift the base 4 to manually monitor the conduction between the base and the chamber wall to determine the lowest process position. This method is relatively cumbersome to implement and will cause certain interference to the chamber.

According to some embodiments of the present application, the control unit is also used to record the position of the base as the first position and the second position respectively when receiving the output signal changing from the second signal to the first signal and then changing from the first signal to the second signal, and compare the first position and the second position, and when the first position is lower than the second position, determine that the second position is the lowest process position.

In one example, the position of the base can be characterized by the distance between the base and the initial position.

In one example, the position of the base can be obtained through the operating information of the driving motor of the base. For example, the rising distance of the base can be obtained through the operating information of the driving motor.

According to the above exemplary embodiments of the present application, the lowest process position can be determined quickly and accurately without interfering with the chamber.

The following is an analysis of the output of the base grounding detection device according to the exemplary embodiment of this application in different states in combination with Figure 5(a), Figure 5(b) and Figure 5(c).

The inventors have conducted an in-depth and detailed analysis of the entire process of the susceptor rising from the initial position to the process position before the process is executed, the process execution process, and the susceptor descending from the process position to the initial position after the process is completed. They have also considered the abnormal situation of the susceptor being short-circuited with the chamber wall or liner during the process execution, and classified these situations according to the voltage state of the susceptor: (1) the susceptor is in a suspended state, and there is no accumulated charge on the susceptor; (2) the susceptor is in a suspended state, and there is accumulated negative charge on the susceptor; (3) the susceptor is in a grounded state.

The above situation (1) applies to the rising stage of the base, before it contacts the pressure ring, and after it lifts up the pressure ring and separates it from the inner liner. The above situation (1) applies to the falling stage of the base, after the pressure ring is placed on the inner liner and separates from the pressure ring.

During the process, it belongs to the above situation (2); during the stage of the base descending and before the pressure ring contacts the inner liner, it also belongs to the above situation (2).

During the rising stage of the base, the base contacts the pressure ring until the pressure ring separates from the inner liner. This process belongs to situation (3); during the descending stage of the base, the pressure ring contacts the inner liner until the base separates from the pressure ring. This process belongs to situation (3); during the process execution, foreign matter appears, causing the base to short-circuit with the chamber wall or the inner liner, which also belongs to situation (3).

Here, situation (1) is analyzed first. Figure 5(a) analyzes situation (1) by taking the state diagram of the susceptor in the rising stage and before it contacts the pressure ring as an example. Other states that meet situation (1) are similar. When the magnetron sputtering process is not performed in the magnetron sputtering chamber, except for the moment when the susceptor tops the pressure ring during the rising process, the susceptor is in a suspended state in other situations, and there is no accumulated negative charge on the susceptor. In this state, since there is no voltage signal at the voltage input terminal of the voltage signal acquisition unit, and the voltage detection unit determines whether the base is grounded by the voltage signal collected by the voltage signal acquisition unit, if the voltage signal of the base is not collected, the voltage detection unit cannot compare with the preset voltage signal, so the voltage adding unit 308 provides a reference voltage signal. The voltage detection unit 304 performs detection based on the reference voltage signal provided by the voltage adding unit 308, and compares the reference voltage signal with the preset voltage signal. The setting principle of the reference voltage signal is that its absolute value is greater than the preset voltage signal. Therefore, the voltage detection unit 304 sends the second signal as an output signal to the control unit 306, and the second signal indicates that the base is not grounded. In this way, when there is no voltage signal on the base, it can be compared with the set comparison voltage normally. In one example, the preset voltage signal can be set to 0.5V (volts) and the reference voltage signal can be set to 15V.

Analyze situation (2). Figure 5(b) analyzes situation (2) using the process execution as an example. Other states that meet situation (2) are similar. At this time, the magnetron sputtering process is executed in the chamber. As mentioned above, negative charge will accumulate on the suspended base, and the suspended base is in a negative voltage state. The voltage signal acquisition unit 302 acquires the negative voltage signal. In the actual magnetron sputtering process, this is a negative voltage with a large amplitude. The voltage detection unit 304 compares the voltage signal with the preset voltage signal. The absolute value of the voltage signal is greater than the preset voltage signal. At this time, the voltage detection unit 304 sends a second signal to the control unit 306 to indicate that the base is not grounded.

Analyze situation (3). Figure 5(c) analyzes situation (3) by taking the state in which the base is in the ascending stage, the base is in contact with the pressure ring and the pressure ring has not separated from the inner liner as an example. Other states that meet situation (3) are similar. When the magnetron sputtering process is not being performed in the magnetron sputtering chamber, and the base is in the ascending process, the base rises to contact with the pressure ring and lifts the pressure ring to the moment of separation from the inner liner. At this time, the base is connected to the ground through the contact between the pressure ring and the inner liner; similarly, when the process is completed, the base should be lowered from the process position and the pressure ring should be restored to Original position, when the base is separated from the pressure ring and the pressure ring is placed on the inner liner, the base is connected to the ground through the contact between the pressure ring and the inner liner; or, when the base should be in a suspended state, but due to other abnormal conditions, it is connected to the ground, for example, when the magnetron sputtering process has an abnormality (for example: when the base and the chamber are in contact There is a foreign object between the inner liner and the chamber wall, which short-circuits the susceptor and the chamber wall; or when the susceptor is at a relatively low process position, the distance between the susceptor and the inner liner is relatively close. If a foreign object falls between the inner liner and the susceptor, the susceptor and the inner liner will be short-circuited). In these cases, the accumulated negative charge on the susceptor will be released, and the potential of the susceptor will be at the same level as the ground. The voltage signal collected by the voltage signal acquisition unit 302 is 0. The voltage detection unit 304 compares the voltage signal with the preset voltage signal (0.5V). Its absolute value is less than the preset voltage signal. Therefore, the first signal is output as an output signal to the control unit 306. The first signal indicates that the base is grounded.

FIG6(a) and FIG6(b) show schematic diagrams for determining the lowest process position according to an exemplary embodiment of the present application. For ease of description, the first signal is set to be a low-level signal and the second signal is set to be a high-level signal. If there is no abnormal situation that causes the base to be connected to the ground, the base is only connected to the ground at the position shown in FIG5(c). Since the pressure ring is in contact with the inner liner, the inner liner is connected to the ground, and the base is grounded when it contacts the pressure ring. When determining the lowest process position, it is necessary to ensure that the base moves from bottom to top, because what we need is the position where the base and the pressure ring are separated from the inner liner.

FIG6(a) is a schematic diagram showing the process of the susceptor rising before the process is performed. As shown in FIG6(a), the susceptor starts to move from the initial position. When the susceptor moves to t1 seconds, the susceptor contacts the pressure ring. According to the above analysis, at this time, since the susceptor is grounded, the output signal of the voltage detection unit 304 changes from the second signal (high level) to the first signal (low level). At this time, the position of the susceptor is the first position (the position where the susceptor contacts the pressure ring). As the base lifts the pressure ring and continues to move upward, when the base moves to t2 seconds, the base lifts the pressure ring to completely separate it from the inner liner, and the connection point between the pressure ring and the inner liner is disconnected. At this time, the base is not grounded, and the output signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level). At this time, the position of the base is the second position (the position where the base and the pressure ring are separated from the inner liner). The inventor has conducted in-depth research on this process. In the above process, at time t2, when the output signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level), the base and the pressure ring have completely separated from the inner liner, and the base and the pressure ring have just separated from the inner liner. Therefore, the above second position can be determined as the lowest process position.

FIG6(b) is a schematic diagram showing the descent process of the base after the process is completed. The base moves from the process position to the initial position, that is, the base moves from top to bottom. This is the process in which the base puts the raised pressure ring back to the inner liner and then returns to the initial position. When the base moves to t3 seconds, the base and the pressure ring contact the inner liner, and the output signal of the voltage detection unit 304 changes from the second signal (high level) to the first signal (low level). When the base moves to t4 seconds, the pressure ring completely falls on the inner liner, and the base separates from the pressure ring, and the generated signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level). The output signal of the voltage detection unit 304 in FIG6(b) looks similar to that in FIG6(a), but after careful analysis, it can be found that at the time t3 when the above-mentioned generated signal changes, the base and the pressure ring have already contacted the inner liner, that is, the base has just passed the theoretical lowest process position downward. Therefore, the position of the base at the time t3 is not suitable as the lowest process position.

FIG7 shows a flow chart of a base grounding detection method according to an embodiment of the present application. As shown in FIG7 , the method includes steps S1 to S3.

S1, collects the voltage signal of the base; S2, determines whether the base is grounded according to the voltage signal and the preset voltage signal, and when the base is grounded, uses the first signal as the output signal, and the first signal indicates that the base is grounded; S3, during the process, if the output signal is the first signal, stops the process and sends an alarm signal.

In some possible implementations, step S2 specifically further includes: comparing the voltage signal with a preset voltage signal, and if the absolute value of the voltage signal is less than the preset voltage signal, determining that the base is grounded, and using the first signal as an output signal.

In some possible implementations, step S2 further includes: if the absolute value of the voltage signal is greater than a preset voltage signal, determining that the base is not grounded, and using the second signal as an output signal, the second signal indicating that the base is not grounded.

In some possible implementations, the method further includes: when there is no voltage signal on the base, providing a reference voltage signal, and comparing the reference voltage signal with a preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, determining that the base is not grounded, and using a second signal as an output signal, the second signal indicating that the base is not grounded.

In some possible implementations, the method further includes: when receiving the output signal changing from the second signal to the first signal and then changing from the first signal to the second signal, recording the position of the base as the first position and the second position respectively, and comparing the first position and the second position, and when the first position is lower than the second position, determining the second position as the lowest process position.

The above content summarizes the features of several embodiments so that those familiar with the technology can better understand the state of the present disclosure. Those familiar with the technology should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for implementing the same purpose and/or achieving the same advantages of the embodiments introduced herein. Those familiar with the technology should also understand that such equivalent structures do not deviate from the spirit and scope of the present disclosure, and they can make various changes, substitutions and modifications in this article without departing from the spirit and scope of the present disclosure.

9: Base

302: Voltage signal acquisition unit

304: Voltage detection unit

306: Control unit

Claims (8)

A pedestal grounding detection device is used in a semiconductor device. The pedestal is arranged in a process chamber in the semiconductor device for performing a semiconductor process, and the pedestal is used to carry a wafer to be processed. The pedestal grounding detection device includes a voltage signal acquisition unit, a voltage detection unit and a control unit. The voltage signal acquisition unit is used to acquire a voltage signal of the pedestal. The voltage detection unit is used to receive the voltage signal from the voltage signal acquisition unit, and determine whether the pedestal is grounded based on the voltage signal and a preset voltage signal. When the pedestal is grounded, a first signal is sent to the control unit as an output signal, and the first signal is sent to the control unit as an output signal. A signal indicates that the base is grounded; the control unit is used to instruct the semiconductor device to stop executing the process and send an alarm signal when the first signal is received during the process of the semiconductor device executing the process; wherein the base grounding detection device also includes a pressure unit, the pressure unit is used to provide a reference voltage signal to the voltage detection unit when there is no voltage signal on the base, the voltage detection unit is used to compare the reference voltage signal with the preset voltage signal, and when it is determined that the absolute value of the reference voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as the output signal, the second signal indicating that the base is not grounded. As described in claim 1, the base grounding detection device, wherein the voltage detection unit is specifically used to: receive the voltage signal, and compare the voltage signal with the preset voltage signal, if the absolute value of the voltage signal is less than the preset voltage signal, then determine that the base is grounded, and use the first signal as the output signal. The base grounding detection device as described in claim 2, wherein the voltage detection unit is also used to: if the absolute value of the voltage signal is greater than the preset voltage signal, determine that the base is not grounded, and use the second signal as the output signal, the second signal indicating that the base is not grounded. The base grounding detection device as described in claim 3, wherein the control unit is further used to record the position of the base as the first position and the second position respectively when receiving the output signal changing from the second signal to the first signal and then changing from the first signal to the second signal, and compare the first position and the second position, and when the first position is lower than the second position, determine that the second position is the lowest process position. A base grounding detection method is used in a semiconductor device, wherein the method comprises: S1, collecting a voltage signal of a base; S2, determining whether the base is grounded according to the voltage signal and a preset voltage signal, and when the base is grounded, using a first signal as an output signal, the first signal indicating that the base is grounded; S3, during the execution of a process, if the output signal is The first signal stops the process and sends an alarm signal; when there is no voltage signal on the base, a reference voltage signal is provided, and the reference voltage signal is compared with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as the output signal, and the second signal indicates that the base is not grounded. As described in claim 5, step S2 specifically includes: comparing the voltage signal with the preset voltage signal, if the absolute value of the voltage signal is less than the preset voltage signal, determining that the base is grounded, and using the first signal as the output signal. As described in claim 6, step S2 further includes: if the absolute value of the voltage signal is greater than the preset voltage signal, determining that the base is not grounded, and using the second signal as the output signal, the second signal indicating that the base is not grounded. The method as claimed in claim 7, wherein the method further comprises: upon receiving the output signal changing from the second signal to the first signal and then changing from the first signal to the second signal, recording the position of the base as the first position and the second position respectively, and comparing the first position and the second position, and when the first position is lower than the second position, determining the second position as the lowest process position.