TWI847396B - A thermal controlling system and method for solid state disk - Google Patents
A thermal controlling system and method for solid state disk Download PDFInfo
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Abstract
Description
本發明係屬於固態硬碟相關領域之技術,尤指一種固態硬碟的溫度控制系統及其方法。 The present invention relates to technologies related to solid state drives, and in particular to a temperature control system and method for solid state drives.
固態硬碟(Solid-state drive或Solid-state disk,SSD,以下簡稱SSD)在操作過程中,可能因為環境溫度高,或是印刷電路板(Printed circuit board,PCB)的散熱不良,導致控制晶片或儲存晶片的操作溫度逐漸升高,最後逼近預設的警戒溫度。此時,為了防止晶片溫度過高導致控制晶片或儲存晶片工作不正常,一般採取降低SSD系統速度的方式,主動地降低操作功耗,藉此降低SSD晶片溫度。 During the operation of a solid-state drive (SSD), the operating temperature of the control chip or storage chip may gradually increase due to high ambient temperature or poor heat dissipation of the printed circuit board (PCB), and finally approach the preset warning temperature. At this time, in order to prevent the chip temperature from being too high and causing the control chip or storage chip to work abnormally, the SSD system speed is generally reduced to actively reduce the operating power consumption and thereby reduce the SSD chip temperature.
不過,各廠牌使用降低SSD速度的方式不盡相同,一般而言最簡單的方式就是採取類似啟停式控制(Bang Bang control)的開路控制(Open loop)方法。也就是當SSD的速度高於某個溫度預設值時,這時降低SSD的系統速度,等到SSD的溫度降低到另一個溫度預設值時,再提高SSD的系統速度。 However, different brands use different methods to reduce SSD speed. Generally speaking, the simplest method is to adopt an open loop control method similar to Bang Bang control. That is, when the speed of the SSD is higher than a certain temperature preset value, the system speed of the SSD is reduced. When the temperature of the SSD drops to another temperature preset value, the system speed of the SSD is increased.
然而,啟停式控制最常見的問題是:為了要調整溫度,造成SSD的系統速度會在高速與低速之間不停的切換,造成整個電腦系統 發生儲存速度與讀寫速度產生忽快忽慢的卡頓狀況,更甚者將造成OS系統的卡頓情況,影響用戶的使用體驗。 However, the most common problem with the on-off control is that in order to adjust the temperature, the SSD system speed will switch between high speed and low speed continuously, causing the entire computer system to experience a lag in storage speed and read/write speed. Worse still, it will cause the OS system to lag, affecting the user experience.
有鑑於先前技術所述之問題,本案所提出的解決手段係關於一種固態硬碟的溫度控制系統,包括:一偵測模組、一控制模組及一預估模組。 In view of the problems described in the previous technology, the solution proposed in this case is about a temperature control system for a solid state hard disk, including: a detection module, a control module and an estimation module.
偵測模組用以偵測並獲得一讀寫速度值、一溫度,及一時間;控制模組具有一啟停程序及一控制程序:控制模組執行啟停程序,當溫度不符一溫度區間值時,調整固態硬碟的讀寫速度;控制模組執行控制程序,根據一讀寫速度預估值控制固態硬碟的讀寫速度;預估模組當控制模組執行啟停程序後,預估模組執行一預估程序,根據讀寫速度值及時間運算出讀寫速度預估值。 The detection module is used to detect and obtain a read/write speed value, a temperature, and a time; the control module has a start/stop program and a control program: the control module executes the start/stop program, and when the temperature does not meet a temperature range value, the read/write speed of the solid state drive is adjusted; the control module executes the control program, and controls the read/write speed of the solid state drive according to a read/write speed estimated value; after the control module executes the start/stop program, the estimation module executes an estimation program, and calculates the read/write speed estimated value according to the read/write speed value and time.
本案同時提出另一解決手段,其係關於一種固態硬碟的溫度控制方法,適於一固態硬碟,該控制方法,包括:持續獲得一讀寫速度值、一溫度,及一時間;執行一啟停程序,當該溫度不符一溫度區間值時,調整該固態硬碟的讀寫速度,並得到一時間及一讀寫速度值;根據該讀寫速度值及該時間執行一預估程序,以獲得一讀寫速度預估值;以及根據該讀寫速度預估值執行一控制程序,以控制該固態硬碟的讀寫速度滿足該讀寫速度預估值。 This case also proposes another solution, which is about a temperature control method for a solid state hard disk, which is suitable for a solid state hard disk. The control method includes: continuously obtaining a read/write speed value, a temperature, and a time; executing a start/stop program, and when the temperature does not meet a temperature range value, adjusting the read/write speed of the solid state hard disk, and obtaining a time and a read/write speed value; executing an estimation program according to the read/write speed value and the time to obtain a read/write speed estimation value; and executing a control program according to the read/write speed estimation value to control the read/write speed of the solid state hard disk to meet the read/write speed estimation value.
本案在固態硬碟的溫度產生變化時進行控制,透過上述溫度控制之方式以估算出讀寫速度預估值,再利用讀寫速度預估值來控制 固態硬碟的讀寫速度,如此一來可快速收斂固態硬碟的讀寫速度及溫度,使固態硬碟得以在維持在一溫度區間內工作。 This case controls the temperature of the solid state drive when it changes. The read and write speed estimate is estimated through the above temperature control method, and then the read and write speed estimate is used to control the read and write speed of the solid state drive. In this way, the read and write speed and temperature of the solid state drive can be quickly converged, so that the solid state drive can work within a temperature range.
10:溫度控制系統 10: Temperature control system
20:偵測模組 20: Detection module
30:控制模組 30: Control module
40:預估模組 40:Estimation module
50:固態硬碟 50: Solid State Drive
51:端口 51:Port
52:處理器 52: Processor
54:系統匯流排 54: System bus
56:NAND型快閃記憶體 56: NAND flash memory
58:靜態隨機存取記憶體 58: Static random access memory
60:電腦主機 60: Computer host
SP1:讀寫速度值 SP1: Read and write speed value
SP2:低速讀寫值 SP2: Low-speed reading and writing of values
SP3:高速讀寫值 SP3: High-speed reading and writing of values
SP4:低速讀寫值 SP4: Low-speed reading and writing of values
SP5:高速讀寫值 SP5: High-speed reading and writing of values
t1:第一時間 t1: first time
t2:第二時間 t2: Second time
t3:第三時間 t3: The third time
t4:第四時間 t4: The fourth time
t5:第五時間 t5: The fifth time
t6:第六時間 t6: The sixth time
T1:第一預設溫度 T1: First preset temperature
T2:第二預設溫度 T2: Second preset temperature
A1:第一面積 A1: First area
A2:第二面積 A2: Second area
A21:第一子面積 A21: First sub-area
A22:第二子面積 A22: Second sub-area
S80,S82,S84,S86:步驟 S80,S82,S84,S86: Steps
圖1繪示溫度控制系統各元件連結示意圖。 Figure 1 shows a schematic diagram of the connections between the components of the temperature control system.
圖2繪示溫度控制方法的步驟流程圖。 Figure 2 shows a flow chart of the steps of the temperature control method.
圖3繪示本案溫度控制的實驗數據圖。 Figure 3 shows the experimental data of temperature control in this case.
圖4繪示控制模組執行啟停控制期間,固態硬碟的溫度及時間的關係變化示意圖,以及控制模組執行啟停控制期間,固態硬碟的讀寫速度及時間的關係變化示意圖。 Figure 4 shows a schematic diagram of the relationship between the temperature of the solid state drive and time during the start-stop control period of the control module, and a schematic diagram of the relationship between the read and write speed of the solid state drive and time during the start-stop control period of the control module.
請參閱圖1所示,本案係關於一種固態硬碟的溫度控制系統10,包括:一偵測模組20、一控制模組30、一預估模組40。
Please refer to FIG. 1 . This case is about a
請參閱圖1所示,偵測模組20用以偵測固態硬碟50的讀寫速度、溫度、及產生讀寫速度變化及溫度變化的時間,得到一讀寫速度值、一溫度,及一時間。其中,由於固態硬碟會內建一控制器以控制固態硬碟的工作,而控制器內大多有內建溫度偵測器以偵測控制器內部溫度,因此在一些實施例中,偵測模組20所測得的溫度可以是指控制器內部溫度。又或者偵測模組20透過其他偵測器來偵測控制器以外的元件,如固態硬碟的外殼體溫度、環境溫度、NAND溫度...等,根據上述之偵測結果以作為溫度。利用本案的溫度控制方式,可精準地讓固態硬碟50維持在穩定的溫度區間內工作。
Please refer to FIG. 1 , the
請參閱圖1所示,控制模組30具有一啟停程序及一控制程序。控制模組30執行啟停程序後,當溫度不符一溫度區間值時,控制模組30調整固態硬碟50的讀寫速度,藉由控制模組30執行啟停程序,以供預估模組40估算合適的讀寫速度。控制模組30執行控制程序,根據一讀寫速度預估值控制固態硬碟50的讀寫速度,以使固態硬碟50維持在穩定的溫度區間內工作。
Please refer to FIG. 1 , the
控制模組30在執行啟停程序時,當溫度先高於溫度區間值時,這時控制模組30會控制固態硬碟50的讀寫速度下降,待溫度低於溫度區間值後,再提高固態硬碟50的讀寫速度,使溫度高於溫度區間值,以供預估模組40利用前述二次讀寫速度的調整,來估算穩定的讀寫速度值。相反的,當溫度先低於溫度區間值時,這時控制模組30會提升固態硬碟50的讀寫速度,待溫度高於溫度區間值後,接著再降低固態硬碟50的讀寫速度,使溫度低於溫度區間值。
When the
因此,控制模組30在執行啟停程序後,至少會讓固態硬碟50歷經一次溫度高於溫度區間值,以及一次溫度低於溫度區間值,使預估模組40估算穩定的讀寫速度值。此外,本案不限於上述只歷經一次溫度高於溫度區間值,以及一次溫度低於溫度區間值,亦可經歷多次溫度高於溫度區間值以及溫度低於溫度區間值,以供預估模組40進行讀寫速度值的估算。
Therefore, after executing the startup and shutdown procedures, the
請參閱圖1所示,在控制模組30執行啟停程序後,預估模組40會執行一預估程序,而根據控制模組30在執行啟停程序的過程中所得到的讀寫速度值及時間來進行估算,藉以得到讀寫速度預估值。控制模
組30執行完一次啟停程序的過程中,溫度高於溫度區間值的次數,以及溫度低於溫度區間值的次數,二者可能相同或僅相差一次。在一些實施例中,為便於計算,預估模組40根據啟停程序過程中,溫度高於溫度區間值的次數以及溫度低於溫度區間值的次數,二者次數相同狀態下所得到的讀寫速度值及時間來進行讀寫速度預估值的估算。另外,當系統進行第二次啟停程序及第二次預估程序時,預估模組40可以只根據第二次啟停程序的過程中所得到的讀寫速度值及時間來進行估算,以得到第二次讀寫速度預估值;也可以綜合根據第一次啟停程序及第二次啟停程序的過程中所得到的讀寫速度值及時間來進行估算,來得到第二次讀寫速度預估值。系統進行第三次以後的啟停程序及預估程序時,讀寫速度預估值的取得依上述類推,在此不再贅述。
Please refer to FIG. 1 . After the
請參閱圖3,假設固態硬碟50啟動時以讀寫速度值SP1進行工作,使得固態硬碟50的溫度不斷上升。當溫度來到一第一預設溫度T1時,這時控制模組30執行啟停程序,而控制固態硬碟50降低讀寫速度至低速讀寫值SP2,並持續一第一時間t1。當固態硬碟50的讀寫速度下降以後可明顯發現固態硬碟50的溫度也持續下降,當溫度下降至一第二預設溫度T2時,這時控制模組30則是控制固態硬碟50提高讀寫速度至高速讀寫值SP3,並持續一第二時間t2,直到固態硬碟50的溫度又上升至第一預設溫度T1。
Please refer to Figure 3. Assume that the solid state
在一些實施例中,讀寫速度值包括一高速讀寫值SP3及一低速讀寫值SP2,時間包括一第一時間t1及一第二時間t2,該第一時間t1對應低速讀寫值SP2、第二時間t2對應高速讀寫值SP3。預估模組40執行預
估程序而根據高速讀寫值SP3、低速讀寫值SP2、第一時間t1及第二時間t2運算出讀寫速度預估值。運算的方式是根據控制模組30執行啟停程序的過程中,固態硬碟50的平均讀寫速度值作為讀寫速度預估值。從圖4中上述計算可以理解成,先計算第一面積A1及第二面積A2的大小,再除以總時間(第一時間t1與第二時間t2的合)而得到平均讀寫速度值作為讀寫速度預估值。因此,估算的方式以公式表示如下公式1所示,其中SE為讀寫速度預估值,SP2*t1即第一面積A1的大小,SP3*t2即第二面積A2的大小。
In some embodiments, the read/write speed value includes a high-speed read/write value SP3 and a low-speed read/write value SP2, and the time includes a first time t1 and a second time t2, wherein the first time t1 corresponds to the low-speed read/write value SP2, and the second time t2 corresponds to the high-speed read/write value SP3. The
另外值得注意的是,公式1是以歷經一次溫度高於溫度區間值,以及一次溫度低於溫度區間值來估算讀寫速度預估值,當進行多次溫度高於溫度區間值以及溫度低於溫度區間值才進行估算時,則是如下公式2類推,其中SP4為低速讀寫值、SP5為高速讀寫值、t3為對應低速讀寫值SP4的第三時間、t4為對應高速讀寫值SP5的第四時間,且SP4相同或異於SP2、SP5相同或異於SP3。 It is also worth noting that Formula 1 estimates the estimated read/write speed after experiencing one temperature higher than the temperature interval value and one temperature lower than the temperature interval value. When the estimation is performed after multiple temperature higher than the temperature interval value and lower than the temperature interval value, the following Formula 2 is used by analogy, where SP4 is the low-speed read/write value, SP5 is the high-speed read/write value, t3 is the third time corresponding to the low-speed read/write value SP4, t4 is the fourth time corresponding to the high-speed read/write value SP5, and SP4 is the same or different from SP2, and SP5 is the same or different from SP3.
在一些實施例中,估算讀寫速度預估值的方式同樣是以平均讀寫速度值為主,但是運算過程與前述略有不同。由圖4可知,第二面積A2包括一第一子面積A21及一第二子面積A22,本實施例計算時僅計算第二子面積A22,再除以總時間(第一時間t1與第二時間t2的合),最後加上低速讀寫值SP2得到平均讀寫速度值。其計算公式如下公式3,其中(SP3-SP2)*t2即第二子面積A22的大小。 In some embodiments, the method of estimating the estimated value of the read/write speed is also based on the average read/write speed value, but the calculation process is slightly different from the above. As shown in Figure 4, the second area A2 includes a first sub-area A21 and a second sub-area A22. In this embodiment, only the second sub-area A22 is calculated, and then divided by the total time (the sum of the first time t1 and the second time t2), and finally the low-speed read/write value SP2 is added to obtain the average read/write speed value. The calculation formula is as follows: Formula 3, where (SP3-SP2)*t2 is the size of the second sub-area A22.
在一些實施例中,估算讀寫速度預估值的方式除了上述二種方式外,還可以搭配權重值來求得讀寫速度預估值。預估模組40執行該預估程序根據高速讀寫值SP3、低速讀寫值SP2、第一時間t1、第二時間t2、第一權重值W1及第二權重值W2運算出讀寫速度預估值。如下公式4、5所示:
在預估模組40得到讀寫速度預估值後,控制模組30執行控制程序而根據讀寫速度預估值控制固態硬碟50的讀寫速度,以使固態硬碟50維持在穩定的溫度區間內工作。在一些實施例中,控制模組30具體控制固態硬碟50降低讀寫速度的方式,是調整該固態硬碟50內處理器52的時脈、該固態硬碟50的系統時脈、該固態硬碟50的記憶體時脈(如NAND型快閃記憶體56)或該固態硬碟50的記憶體大小(如靜態隨機存取記憶體(Static Random Access Memory,SRAM)58)其中之一或二以上,藉以降低固態硬碟50的讀寫速度。如圖1所示,控制模組30對調整時脈之方式主要通過系統匯流排54進行控制,圖式中所呈現的端口51適用以資訊連接電腦主機60,以供電腦主機60進行資料的存取。此外,端口51可以是SATA(Serial Advanced Technology Attachment),也可以是PCIe(Peripheral Component Interconnect Express)。
After the
請參閱圖3,控制模組30以讀寫速度預估值控制固態硬碟50的讀寫速度的第五時間內t5,可發現固態硬碟50維持在穩定的溫度下工
作,在第五時間t5結束時,因為外在環境影響導致固態硬碟50的溫度急遽下降,這時控制模組30會拉高固態硬碟50的讀寫速度,使固態硬碟50的溫度降到低點後開始反轉上升(如第六時間t6)。由於固態硬碟50的溫度受到擾動,這時控制模組30會重新執行啟停程序及控制程序、預估模組40會重新執行預估程序,藉以重新預估新的讀寫速度預估值以控制固態硬碟50的讀寫速度。
Please refer to Figure 3. During the fifth time t5, when the
請參閱圖2所示,本案對於固態硬碟50的溫度控制方法,其步驟為:
Please refer to FIG. 2 , the temperature control method of the solid state
步驟S80:控制模組30執行啟停程序,當溫度不符溫度區間值時,控制模組30調整固態硬碟50的讀寫速度,並得到時間及讀寫速度值。本步驟中,控制模組30如何調整固態硬碟50的讀寫速度請參閱前述內容,在此不再贅述。
Step S80: The
步驟S82:預估模組40根據讀寫速度值及時間執行預估程序,以獲得讀寫速度預估值。本步驟中,預估模組40如何得到讀寫速度預估值請參閱前述內容,在此不再贅述。
Step S82: The
步驟S84:控制模組30根據讀寫速度預估值執行控制程序,以控制固態硬碟50的讀寫速度滿足該讀寫速度預估值。
Step S84: The
步驟S86:當溫度不符溫度區間值時,重新執行步驟S80。 Step S86: When the temperature does not meet the temperature range value, re-execute step S80.
雖然本案的技術內容已經以各種實施例揭示如上,然而,其並非用以限定本案之保障範圍,任何熟習本案所屬領域之通常知識者,在不脫離本案之精神所作更動或修潤,皆屬本案所欲保障之範疇內,因此本案之保障範圍應當以申請專利範圍所述之內容為准。 Although the technical content of this case has been disclosed as above through various embodiments, it is not used to limit the scope of protection of this case. Any changes or modifications made by anyone familiar with the field to which this case belongs without departing from the spirit of this case are within the scope of protection of this case. Therefore, the scope of protection of this case should be based on the content described in the scope of the patent application.
S80,S82,S84,S86:步驟S80, S82, S84, S86: Steps
Claims (8)
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200917269A (en) * | 2007-10-09 | 2009-04-16 | A Data Technology Co Ltd | Solid state semiconductor storage device with temperature control function |
| US20160252939A1 (en) * | 2015-02-27 | 2016-09-01 | Samsung Electronics Co., Ltd. | Electronic device, operating method thereof and recording medium |
| TW202228127A (en) * | 2021-01-14 | 2022-07-16 | 慧榮科技股份有限公司 | Data accessing method using dynamic speed adjustment with aid of thermal control unit, and associated apparatus |
| CN217543783U (en) * | 2022-05-16 | 2022-10-04 | 深圳市奇创鑫电子科技有限公司 | Sustainable water-cooling solid state hard drives |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200917269A (en) * | 2007-10-09 | 2009-04-16 | A Data Technology Co Ltd | Solid state semiconductor storage device with temperature control function |
| US20160252939A1 (en) * | 2015-02-27 | 2016-09-01 | Samsung Electronics Co., Ltd. | Electronic device, operating method thereof and recording medium |
| TW202228127A (en) * | 2021-01-14 | 2022-07-16 | 慧榮科技股份有限公司 | Data accessing method using dynamic speed adjustment with aid of thermal control unit, and associated apparatus |
| CN217543783U (en) * | 2022-05-16 | 2022-10-04 | 深圳市奇创鑫电子科技有限公司 | Sustainable water-cooling solid state hard drives |
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