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TWI844422B - Package structure and manufacturing method of package structure - Google Patents

Package structure and manufacturing method of package structure Download PDF

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Publication number
TWI844422B
TWI844422B TW112126192A TW112126192A TWI844422B TW I844422 B TWI844422 B TW I844422B TW 112126192 A TW112126192 A TW 112126192A TW 112126192 A TW112126192 A TW 112126192A TW I844422 B TWI844422 B TW I844422B
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Taiwan
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chip
substrate
measuring piece
layer
packaging
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TW112126192A
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Chinese (zh)
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TW202504005A (en
Inventor
李棠興
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南茂科技股份有限公司
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Priority to CN202311242492.0A priority patent/CN119314954A/en
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Publication of TWI844422B publication Critical patent/TWI844422B/en
Publication of TW202504005A publication Critical patent/TW202504005A/en

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    • H10W74/111
    • H10P74/27
    • H10W74/01
    • H10W95/00

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

A package structure including a unit substrate, a measuring element, a chip and an encapsulation layer is provided. The measuring element is disposed on the unit substrate, and a section width of the measuring element changes with a height of the measuring element. The chip includes an upper surface and a lower surface, and the lower surface is connected to the unit substrate. The encapsulation layer is disposed on the unit substrate and covers the chip and the measuring element. A top surface of the measuring element is exposed to the encapsulation layer, and the upper surface is spaced from a surface of the encapsulation layer by a distance corresponding to a section width of the top surface of the measuring element. In addition, a manufacturing method of the package structure is also proposed.

Description

封裝結構及封裝結構的製造方法Package structure and method for manufacturing the same

本發明是有關於一種封裝結構及封裝結構的製造方法,且特別是有關於一種可快速且直觀地判斷間距尺寸的封裝結構及封裝結構的製造方法。 The present invention relates to a packaging structure and a method for manufacturing the packaging structure, and in particular to a packaging structure and a method for manufacturing the packaging structure that can quickly and intuitively determine the spacing size.

在特定封裝結構中,例如指紋辨識器的產品特性與封裝結構的晶片及封裝層的表面之間的間距有關。現今確認封裝結構的間距的方法例如是,切割封裝結構以獲得封裝結構的切面以量測間距。此量測方法會破壞封裝結構,而導致檢測成本增加且耗時。 In a specific package structure, such as a fingerprint reader, the product characteristics are related to the distance between the chip of the package structure and the surface of the package layer. The current method of confirming the distance of the package structure is, for example, cutting the package structure to obtain a cross section of the package structure to measure the distance. This measurement method will destroy the package structure, resulting in increased testing costs and time-consuming.

本發明提供一種封裝結構及封裝結構的製造方法,無需破壞封裝結構即可快速且直觀地判斷封裝結構的產品特性(例如是特定尺寸)。 The present invention provides a packaging structure and a method for manufacturing the packaging structure, which can quickly and intuitively determine the product characteristics (such as a specific size) of the packaging structure without destroying the packaging structure.

本發明的封裝結構,包括一單元基板、一量測件、一晶片 及一封裝層。量測件設置於單元基板,量測件的一截面寬度隨量測件的一高度而改變。晶片包括一上表面及一下表面,下表面連接於單元基板。封裝層,設置於單元基板且包覆晶片及量測件。量測件的一頂面外露於封裝層,上表面與封裝層的一表面間隔一距離,距離對應於量測件的頂面的截面寬度。 The packaging structure of the present invention includes a unit substrate, a measuring device, a chip and a packaging layer. The measuring device is arranged on the unit substrate, and a cross-sectional width of the measuring device changes with a height of the measuring device. The chip includes an upper surface and a lower surface, and the lower surface is connected to the unit substrate. The packaging layer is arranged on the unit substrate and covers the chip and the measuring device. A top surface of the measuring device is exposed to the packaging layer, and a distance is spaced between the upper surface and a surface of the packaging layer, and the distance corresponds to the cross-sectional width of the top surface of the measuring device.

本發明的封裝結構的製造方法包括以下步驟。設置一基板。設置至少一突出件,至少一突出件設置於基板,各至少一突出件的一截面寬度隨各至少一突出件的一高度而改變。設置至少一晶片,各至少一晶片包括一上表面及一下表面,下表面連接於基板。設置一封裝層,封裝層包覆至少一晶片及至少一突出件。研磨封裝層及至少一突出件,各至少一晶片的上表面與研磨後的封裝層的一表面間隔一距離,至少一突出件被研磨而形成至少一量測件,各至少一量測件的一頂面外露於研磨後的封裝層,距離對應於各至少一量測件的頂面的截面寬度。切割基板及封裝層以形成一封裝結構,基板被切割而形成至少一單元基板。 The manufacturing method of the packaging structure of the present invention includes the following steps. A substrate is provided. At least one protrusion is provided, and the at least one protrusion is provided on the substrate, and a cross-sectional width of each at least one protrusion changes with a height of each at least one protrusion. At least one chip is provided, and each at least one chip includes an upper surface and a lower surface, and the lower surface is connected to the substrate. A packaging layer is provided, and the packaging layer covers at least one chip and at least one protrusion. The packaging layer and the at least one protrusion are ground, and the upper surface of each at least one chip is spaced a distance from a surface of the ground packaging layer, and the at least one protrusion is ground to form at least one measuring piece, and a top surface of each at least one measuring piece is exposed on the ground packaging layer, and the distance corresponds to the cross-sectional width of the top surface of each at least one measuring piece. The substrate and the packaging layer are cut to form a packaging structure, and the substrate is cut to form at least one unit substrate.

基於上述,本發明的封裝結構的量測件的頂部外露於封裝層,且頂部的截面寬度對應於晶片的上表面與封裝層的表面的距離,使用者可直接地量測外露的頂部的截面寬度,並對應得知晶片的上表面與封裝層的表面的距離。藉此,使用者可直觀且快速地判斷封裝結構的產品特性,以提升封裝結構的使用便利性、降低檢測成本及檢測時間。 Based on the above, the top of the measuring part of the package structure of the present invention is exposed on the package layer, and the cross-sectional width of the top corresponds to the distance between the upper surface of the chip and the surface of the package layer. The user can directly measure the cross-sectional width of the exposed top and know the distance between the upper surface of the chip and the surface of the package layer. In this way, the user can intuitively and quickly judge the product characteristics of the package structure, so as to improve the convenience of the package structure and reduce the detection cost and time.

為了讓本發明的上述特徵及優點能夠更明顯易懂,下文 特舉實施例,並配合所附圖式詳細說明如下。 In order to make the above features and advantages of the present invention more clearly understood, the following is a detailed description of the embodiments with the accompanying drawings.

A:虛線 A: Dashed line

β1、β2:角度 β1, β2: angle

C:切割線 C: Cutting line

D1、D3:距離 D1, D3: distance

D2:厚度 D2: Thickness

H:高度 H: Height

H1、H2、H3:總高度 H1, H2, H3: Total height

W1、W2、W3、W4、W5:截面寬度 W1, W2, W3, W4, W5: Cross-sectional width

S:臨時支撐載體 S: Temporary support carrier

S1:斜面 S1: Inclined surface

S2:底面 S2: Bottom surface

100a、100b:封裝結構 100a, 100b: packaging structure

110a:基板 110a: Substrate

110b:單元基板 110b: unit substrate

112:防銲層 112: Anti-welding layer

120a、120b:突出件 120a, 120b: protruding parts

130a、130b:量測件 130a, 130b: measuring parts

132:頂面 132: Top

140:晶片 140: Chip

142:上表面 142: Upper surface

144:下表面 144: Lower surface

150a、150b:封裝層 150a, 150b: packaging layer

152:表面 152: Surface

160:銲線 160:Welding wire

170:電子元件 170: Electronic components

180:膜層 180: Membrane layer

圖1至圖6是根據本發明的一實施例的封裝結構的製造方法的局部剖面示意圖。 Figures 1 to 6 are partial cross-sectional schematic diagrams of a method for manufacturing a packaging structure according to an embodiment of the present invention.

圖7是圖6的基板的上視圖。 FIG. 7 is a top view of the substrate of FIG. 6 .

圖8是圖6的封裝結構的剖面示意圖。 FIG8 is a schematic cross-sectional view of the packaging structure of FIG6.

圖9是圖6的封裝結構的製造方法的局部剖面示意圖。 FIG9 is a partial cross-sectional schematic diagram of the manufacturing method of the packaging structure of FIG6.

圖10是切割量測件後形成的封裝結構的示意圖。 Figure 10 is a schematic diagram of the package structure formed after cutting the measuring piece.

圖11是根據本發明的另一實施例的突出件與基板的示意圖。 Figure 11 is a schematic diagram of a protrusion and a substrate according to another embodiment of the present invention.

圖12是圖11的量測件與基板的示意圖。 FIG12 is a schematic diagram of the measuring device and substrate of FIG11 .

圖1至圖6是根據本發明的一實施例的封裝結構的製造方法的局部剖面示意圖。圖7是圖6的基板的上視圖。圖8是圖6的封裝結構的剖面示意圖。請同時參閱圖1至圖8,關於本實施例的封裝結構的製造方法,首先,如圖1所示,設置一臨時支撐載體S及一基板110a。臨時支撐載體S用以支撐基板110a,基板110a可設置於臨時支撐載體S上,臨時支撐載體S可為板體、貼膜或專用於機器設備上之治、夾具。但不限於此。在未繪示的一實施例中,可直接設置基板110a於機台設備上而無需使用臨時支撐 載體S。 Fig. 1 to Fig. 6 are partial cross-sectional schematic diagrams of a method for manufacturing a package structure according to an embodiment of the present invention. Fig. 7 is a top view of the substrate of Fig. 6. Fig. 8 is a cross-sectional schematic diagram of the package structure of Fig. 6. Please refer to Fig. 1 to Fig. 8 for the manufacturing method of the package structure of this embodiment. First, as shown in Fig. 1, a temporary support carrier S and a substrate 110a are provided. The temporary support carrier S is used to support the substrate 110a. The substrate 110a can be provided on the temporary support carrier S. The temporary support carrier S can be a plate, a film, or a fixture or a clamp specially used on a machine. But it is not limited to this. In an embodiment not shown, the substrate 110a can be directly placed on the machine equipment without using a temporary support carrier S.

接著,如圖2所示,在基板110a上設置至少一突出件120a。本實施例的突出件120a的材質與基板110a的一防銲層112的絕緣性材質相同,但不限於此。具體來說,防銲層112與突出件120a可為一體。設置突出件120a的方法例如是在基板110a上設置防銲層112的同時,一併形成突出件120a。 Next, as shown in FIG. 2 , at least one protrusion 120a is disposed on the substrate 110a. The material of the protrusion 120a of the present embodiment is the same as the insulating material of a solder-proof layer 112 of the substrate 110a, but is not limited thereto. Specifically, the solder-proof layer 112 and the protrusion 120a may be integrated. The method of disposing the protrusion 120a is, for example, to form the protrusion 120a at the same time as disposing the solder-proof layer 112 on the substrate 110a.

突出件120a的一截面寬度W1隨突出件120a的一高度H而改變。意即,突出件120a上的任一點的高度對應於一個特定的截面寬度。突出件120a的高度H與截面寬度W1呈反比,但不限於此。突出件120a的一斜面S1與一底面S2之間具有一夾角β1,夾角β1對應於突出件120a的一總高度H1。 A cross-sectional width W1 of the protrusion 120a changes with a height H of the protrusion 120a. That is, the height of any point on the protrusion 120a corresponds to a specific cross-sectional width. The height H of the protrusion 120a is inversely proportional to the cross-sectional width W1, but is not limited thereto. An angle β1 is formed between an inclined surface S1 and a bottom surface S2 of the protrusion 120a, and the angle β1 corresponds to a total height H1 of the protrusion 120a.

突出件120a的截面形狀例如是一三角形。本實施例的突出件120a的截面形狀為直角三角形,但不限於此。突出件120a的截面形狀可以是等腰三角形、正三角形等任意的三角形。夾角β1例如是30度,但不限於此。在未繪示的一實施例中,夾角β1例如是45度、60度等易於加工的角度。在未繪示的另一實施例中,夾角β1可以是任意的角度。 The cross-sectional shape of the protrusion 120a is, for example, a triangle. The cross-sectional shape of the protrusion 120a of this embodiment is a right triangle, but is not limited thereto. The cross-sectional shape of the protrusion 120a can be any triangle such as an isosceles triangle or an equilateral triangle. The angle β1 is, for example, 30 degrees, but is not limited thereto. In an embodiment not shown, the angle β1 is, for example, 45 degrees, 60 degrees, or other angles that are easy to process. In another embodiment not shown, the angle β1 can be any angle.

如圖3所示,在突出件120a設置完畢後,在基板110a上設置至少一晶片140。晶片140包括一上表面142及一下表面144,下表面144例如可透過黏晶膠固定於基板110a。上表面142相對於下表面144。突出件120a的總高度H1大於晶片140的上表面142至基板110a的表面的距離D3。在晶片140設置完畢後,如圖 4所示,設置一銲線160及一電子元件170。晶片140的上表面142透過銲線160而與基板110a電性連接。電子元件170設置於晶片140旁,電子元件170例如是一被動元件,但不限於此。 As shown in FIG3, after the protrusion 120a is set, at least one chip 140 is set on the substrate 110a. The chip 140 includes an upper surface 142 and a lower surface 144, and the lower surface 144 can be fixed to the substrate 110a through, for example, die bonding glue. The upper surface 142 is opposite to the lower surface 144. The total height H1 of the protrusion 120a is greater than the distance D3 from the upper surface 142 of the chip 140 to the surface of the substrate 110a. After the chip 140 is set, as shown in FIG4, a welding wire 160 and an electronic component 170 are set. The upper surface 142 of the chip 140 is electrically connected to the substrate 110a through the welding wire 160. The electronic component 170 is set next to the chip 140, and the electronic component 170 is, for example, a passive component, but not limited to this.

在晶片140、銲線160及電子元件170設置完畢後,如圖5所示,設置一封裝層150a。封裝層150a完全地包覆晶片140、銲線160、電子元件170及突出件120a。在封裝層150a設置完畢後,研磨封裝層150a及突出件120a。圖5以虛線A示意性地繪示研磨後的封裝層150b的一表面152(圖6)的位置,且繪示研磨後的封裝層150b的一厚度D2(即,虛線A至基板110a的表面的距離)。突出件120a突出於虛線A,突出件120a的總高度H1大於厚度D2。 After the chip 140, the soldering wire 160 and the electronic component 170 are set, as shown in FIG5, a packaging layer 150a is set. The packaging layer 150a completely covers the chip 140, the soldering wire 160, the electronic component 170 and the protrusion 120a. After the packaging layer 150a is set, the packaging layer 150a and the protrusion 120a are ground. FIG5 schematically shows the position of a surface 152 (FIG. 6) of the ground packaging layer 150b with a dotted line A, and shows a thickness D2 of the ground packaging layer 150b (i.e., the distance from the dotted line A to the surface of the substrate 110a). The protrusion 120a protrudes from the dotted line A, and the total height H1 of the protrusion 120a is greater than the thickness D2.

如圖6所示,在研磨封裝層150a及突出件120a後,晶片140的上表面142與研磨後的封裝層150b的表面152間隔一距離D1,突出件120a被研磨而形成量測件130a。量測件130a的一截面寬度W2隨量測件130a的一高度H而改變。量測件130a研磨後的形狀為一梯形。由於突出件120a突出於虛線A且封裝層150a完全地包覆突出件120a(圖5),在研磨完畢後,量測件130a的一頂面132外露於研磨後的封裝層150b的表面152,而可從外部直接看到量測件130a的頂面132。量測件130a的一總高度H2等於研磨後的封裝層150b的厚度D2,總高度H2等於研磨後的封裝層150b的厚度D2。 As shown in FIG. 6 , after the package layer 150a and the protrusion 120a are ground, the upper surface 142 of the chip 140 is spaced apart from the surface 152 of the package layer 150b after grinding by a distance D1, and the protrusion 120a is ground to form the measuring piece 130a. A cross-sectional width W2 of the measuring piece 130a changes with a height H of the measuring piece 130a. The shape of the measuring piece 130a after grinding is a trapezoid. Since the protrusion 120a protrudes from the dotted line A and the package layer 150a completely covers the protrusion 120a ( FIG. 5 ), after grinding, a top surface 132 of the measuring piece 130a is exposed on the surface 152 of the package layer 150b after grinding, and the top surface 132 of the measuring piece 130a can be directly seen from the outside. The total height H2 of the measuring piece 130a is equal to the thickness D2 of the package layer 150b after grinding. The total height H2 is equal to the thickness D2 of the package layer 150b after grinding.

如圖7所示,本實施例的設置於基板110a上的晶片140 的數量例如是25個,但不限於此。量測件130a(突出件120a)位於基板110a的邊緣,量測件130a(突出件120a)的數量例如是兩個,但不限於此。在不影響封裝結構的製程的情況下,量測件130a(突出件120a)的數量可為任意數量,且可設置於基板110a的任意位置。例如,在未繪示的一實施例中,量測件130a(突出件120a)的數量可為四個,且可設置於基板110a的四邊。在未繪示的另一實施例中,量測件130a(突出件120a)可位於相鄰的兩晶片140之間。基板110a的形狀不以本實施例為限。 As shown in FIG. 7 , the number of chips 140 disposed on the substrate 110a of this embodiment is, for example, 25, but not limited thereto. The measuring piece 130a (protruding piece 120a) is located at the edge of the substrate 110a, and the number of the measuring piece 130a (protruding piece 120a) is, for example, two, but not limited thereto. Without affecting the process of the packaging structure, the number of the measuring piece 130a (protruding piece 120a) can be any number, and can be disposed at any position of the substrate 110a. For example, in an embodiment not shown, the number of the measuring piece 130a (protruding piece 120a) can be four, and can be disposed at four sides of the substrate 110a. In another embodiment not shown, the measuring piece 130a (protruding piece 120a) can be located between two adjacent chips 140. The shape of the substrate 110a is not limited to this embodiment.

在封裝層150a及突出件120a研磨完畢後,移除臨時支撐載體S,且在研磨後的封裝層150b的表面152進行鍍膜。一膜層180形成於封裝層150b的表面152上(圖8)。在鍍膜完畢後,切割封裝層150b及基板110a以形成如圖8所示的一封裝結構100a。基板110a被切割而形成一單元基板110b。 After the packaging layer 150a and the protrusion 120a are polished, the temporary support carrier S is removed, and the polished surface 152 of the packaging layer 150b is plated. A film layer 180 is formed on the surface 152 of the packaging layer 150b (Figure 8). After the plating is completed, the packaging layer 150b and the substrate 110a are cut to form a packaging structure 100a as shown in Figure 8. The substrate 110a is cut to form a unit substrate 110b.

封裝結構100a包括單元基板110b、晶片140、量測件130a、銲線160、電子元件170、膜層180及封裝層150b。晶片140的下表面144連接於單元基板110b,量測件130a及封裝層150b設置於單元基板110b。晶片140的數量為一個,但不限於此。本實施例的封裝結構100a可用於指紋辨識器產品,但不限於此。 The package structure 100a includes a unit substrate 110b, a chip 140, a measuring device 130a, a soldering wire 160, an electronic component 170, a film layer 180, and a package layer 150b. The lower surface 144 of the chip 140 is connected to the unit substrate 110b, and the measuring device 130a and the package layer 150b are disposed on the unit substrate 110b. The number of chips 140 is one, but not limited thereto. The package structure 100a of this embodiment can be used for fingerprint recognition products, but not limited thereto.

封裝結構100a例如是指紋辨識器的產品特性和晶片140與膜層180(封裝層150b)之間的間距有關。間距即為晶片140的上表面142與封裝層150b的表面152之間的距離D1。間距(距離D1)過大或過小都會影響晶片140的感應的靈敏度。 The package structure 100a is, for example, related to the product characteristics of the fingerprint reader and the distance between the chip 140 and the film layer 180 (package layer 150b). The distance is the distance D1 between the upper surface 142 of the chip 140 and the surface 152 of the package layer 150b. If the distance (distance D1) is too large or too small, it will affect the sensitivity of the chip 140.

習知的量測方法還包括,切割封裝結構以獲得封裝結構的切面,藉此量測間距(距離D1)。此量測方法會破壞封裝結構,而導致檢測成本增加且耗時。 The known measurement method also includes cutting the package structure to obtain a cross section of the package structure to measure the spacing (distance D1). This measurement method will destroy the package structure, resulting in increased testing costs and time-consuming.

如圖5及圖6所示,研磨後的封裝層150b的厚度D2等於距離D3及間距(距離D1)的和。厚度D2等於量測件130a的總高度H2。突出件120a的總高度H1及角度β1為已知的數值。量測件130a的頂面132的截面寬度W3可由量測得到,而為已知的數值。根據三角函數公式,量測件130a的總高度H2(即,封裝層150b的厚度D2)可由方程式(1)得到。 As shown in FIG. 5 and FIG. 6 , the thickness D2 of the package layer 150b after grinding is equal to the sum of the distance D3 and the spacing (distance D1). The thickness D2 is equal to the total height H2 of the measuring piece 130a. The total height H1 and the angle β1 of the protruding piece 120a are known values. The cross-sectional width W3 of the top surface 132 of the measuring piece 130a can be obtained by measurement and is a known value. According to the trigonometric formula, the total height H2 of the measuring piece 130a (i.e., the thickness D2 of the package layer 150b) can be obtained by equation (1).

H2=H1-W3*tan(β1) (1) H2=H1-W3*tan(β1) (1)

量測件130a的總高度H2對應於截面寬度W3。在晶片140設置完畢且在設置封裝層150a之前(圖4),可量測距離D3,故距離D3為已知的數值。根據方程式(1)及總高度H2與距離D1、D3的關係,距離D1可由方程式(2)得到。 The total height H2 of the measuring piece 130a corresponds to the cross-sectional width W3. After the chip 140 is set and before the packaging layer 150a is set (Figure 4), the distance D3 can be measured, so the distance D3 is a known value. According to equation (1) and the relationship between the total height H2 and the distances D1 and D3, the distance D1 can be obtained by equation (2).

D1=H1-(W3*(tanβ1))-D3 (2) D1=H1-(W3*(tanβ1))-D3 (2)

由此可知,距離D1對應於量測件130a的頂面132的截面寬度W3。使用者可透過量測突出件120a(量測件130a)的頂面132的截面寬度W3,直接且直觀地得到距離D1的值。藉此,使用者可快速地判斷封裝結構100a的產品特性,以提升封裝結構100a的使用便利性、降低檢測成本及檢測時間。 It can be seen that the distance D1 corresponds to the cross-sectional width W3 of the top surface 132 of the measuring piece 130a. The user can directly and intuitively obtain the value of the distance D1 by measuring the cross-sectional width W3 of the top surface 132 of the protruding piece 120a (measuring piece 130a). In this way, the user can quickly judge the product characteristics of the package structure 100a to improve the convenience of use of the package structure 100a and reduce the detection cost and time.

圖9是圖6的封裝結構的製造方法的局部剖面示意圖。圖10是切割量測件後形成的封裝結構的示意圖。請同時參閱圖9 及圖10,在研磨封裝層150a及突出件120a之後且在形成封裝結構之前,更可包括切除量測件130a的步驟。使用者可在切除量測件130a之前,量測量測件130a的頂面132的截面寬度W3,以得到距離D1的值之後,再切除量測件130a。一切割線C位於晶片140及量測件130a之間。在切除量測件130a後形成的封裝結構100b包括單元基板110b、晶片140、銲線160、電子元件170、膜層180及封裝層150b。 FIG9 is a partial cross-sectional schematic diagram of the manufacturing method of the package structure of FIG6. FIG10 is a schematic diagram of the package structure formed after cutting the measuring piece. Please refer to FIG9 and FIG10 at the same time. After grinding the package layer 150a and the protruding piece 120a and before forming the package structure, the step of cutting off the measuring piece 130a may be further included. Before cutting off the measuring piece 130a, the user may measure the cross-sectional width W3 of the top surface 132 of the measuring piece 130a to obtain the value of the distance D1, and then cut off the measuring piece 130a. A cutting line C is located between the chip 140 and the measuring piece 130a. The package structure 100b formed after the measuring piece 130a is cut off includes a unit substrate 110b, a chip 140, a welding wire 160, an electronic component 170, a film layer 180 and a package layer 150b.

圖11是根據本發明的另一實施例的突出件與基板的示意圖。圖12是圖11的量測件與基板的示意圖。請同時參閱圖5、圖11及圖12,本實施例的突出件120b與前述實施例相似,兩者的差異在於,本實施例的突出件120b的截面形狀為一梯形,且突出件120b的材質與防銲層112的材質相異。具體來說,突出件120b的截面形狀為一等腰梯形,但不限於此。突出件120b為一獨立的元件。突出件120b例如是一獨立的絕緣壓條,突出件120b的材質例如是FR4之類的絕緣材質,但不限於此。突出件120b可透過黏膠預先設置於基板110a上。 FIG11 is a schematic diagram of a protrusion and a substrate according to another embodiment of the present invention. FIG12 is a schematic diagram of the measuring piece and the substrate of FIG11. Please refer to FIG5, FIG11 and FIG12 simultaneously. The protrusion 120b of this embodiment is similar to the aforementioned embodiment. The difference between the two is that the cross-sectional shape of the protrusion 120b of this embodiment is a trapezoid, and the material of the protrusion 120b is different from the material of the anti-soldering layer 112. Specifically, the cross-sectional shape of the protrusion 120b is an isosceles trapezoid, but not limited to this. The protrusion 120b is an independent component. The protrusion 120b is, for example, an independent insulating pressure strip, and the material of the protrusion 120b is, for example, an insulating material such as FR4, but not limited to this. The protrusion 120b can be pre-set on the substrate 110a through adhesive.

如圖12所示,量測件130b的角度β2及底面的截面寬度W5為已知的數值,量測件130b的頂面132的截面寬度W4可被量測而為已知的數值。根據梯形公式及量測件130b的總高度H3(封裝層150b的厚度D2)與距離D1、D3的關係,距離D1可以由方程式(3)得到。 As shown in FIG. 12 , the angle β2 and the cross-sectional width W5 of the bottom surface of the measuring piece 130b are known values, and the cross-sectional width W4 of the top surface 132 of the measuring piece 130b can be measured and is a known value. According to the trapezoidal formula and the relationship between the total height H3 of the measuring piece 130b (the thickness D2 of the packaging layer 150b) and the distances D1 and D3, the distance D1 can be obtained by equation (3).

D1=((W5-W4)/2)*tan(β2)-D3 (3) D1=((W5-W4)/2)*tan(β2)-D3 (3)

藉此,使用者可透過量測量測件130b的頂面132的截面寬度W4,無需破壞原有封裝結構即可直接且直觀地得到距離D1的值,量測的方式例如是配合工具顯微鏡或其它類似量測功能之量測儀器進行量測。本實施例的突出件120b及量測件130b與前述實施例具有相同的功效。使用者可根據其需求設置突出件120a、120b。 Thus, the user can directly and intuitively obtain the value of the distance D1 by measuring the cross-sectional width W4 of the top surface 132 of the measuring piece 130b without destroying the original packaging structure. The measurement method is, for example, to measure with a tool microscope or other measuring instruments with similar measuring functions. The protruding piece 120b and the measuring piece 130b of this embodiment have the same functions as the aforementioned embodiments. The user can set the protruding pieces 120a and 120b according to their needs.

綜上所述,本發明的封裝結構的量測件的頂部外露於封裝層,且頂部的截面寬度對應於晶片的上表面與封裝層的表面的距離,使用者可直接地量測外露的頂部的截面寬度,並對應得知晶片的上表面與封裝層的表面的距離。藉此,使用者可直觀且快速地判斷封裝結構的產品特性,無需進行破壞原有封裝結構,節省量測手續,如此一來,可有效提升封裝結構的使用便利性、降低檢測成本及檢測時間。 In summary, the top of the measuring part of the packaging structure of the present invention is exposed on the packaging layer, and the cross-sectional width of the top corresponds to the distance between the upper surface of the chip and the surface of the packaging layer. The user can directly measure the cross-sectional width of the exposed top and know the distance between the upper surface of the chip and the surface of the packaging layer. In this way, the user can intuitively and quickly judge the product characteristics of the packaging structure without destroying the original packaging structure, saving measurement procedures, thus effectively improving the convenience of the packaging structure and reducing the detection cost and time.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the attached patent application.

D1:距離 D1: Distance

D2:厚度 D2: Thickness

100a:封裝結構 100a:Packaging structure

110b:單元基板 110b: unit substrate

112:防銲層 112: Anti-welding layer

130a:量測件 130a: Measuring parts

132:頂面 132: Top

140:晶片 140: Chip

142:上表面 142: Upper surface

144:下表面 144: Lower surface

150b:封裝層 150b: Packaging layer

152:表面 152: Surface

160:銲線 160:Welding wire

170:電子元件 170: Electronic components

180:膜層 180: Membrane layer

Claims (10)

一種封裝結構,包括:一單元基板;一量測件,設置於該單元基板,該量測件的一截面寬度隨該量測件的一高度而改變;一晶片,包括一上表面及一下表面,該下表面連接於該單元基板;以及一封裝層,設置於該單元基板且包覆該晶片及該量測件,該量測件的一頂面外露於該封裝層,該上表面與該封裝層的一表面間隔一距離,該距離對應於該量測件的該頂面的截面寬度而為,D1=((W5-W4)/2)*tan(β2)-D3,其中D1為該晶片的該上表面與該封裝層的該表面間隔的該距離,W5為該量測件的一底面的一截面寬度,W4為該量測件的該頂面的該截面寬度,β2為該量測件的一角度,D3為該晶片的該上表面至該基板的該表面的一距離,該量測件的該頂面相對於該底面,該角度β2對應於該量測件的一總高度。 A packaging structure includes: a unit substrate; a measuring piece, which is arranged on the unit substrate, and a cross-sectional width of the measuring piece changes with a height of the measuring piece; a chip, which includes an upper surface and a lower surface, and the lower surface is connected to the unit substrate; and a packaging layer, which is arranged on the unit substrate and covers the chip and the measuring piece, and a top surface of the measuring piece is exposed to the packaging layer, and the upper surface is spaced from a surface of the packaging layer by a distance, and the distance corresponds to the cross-sectional width of the top surface of the measuring piece. And D1=((W5-W4)/2)*tan(β2)-D3, where D1 is the distance between the upper surface of the chip and the surface of the packaging layer, W5 is the cross-sectional width of a bottom surface of the measuring piece, W4 is the cross-sectional width of the top surface of the measuring piece, β2 is an angle of the measuring piece, D3 is a distance from the upper surface of the chip to the surface of the substrate, the top surface of the measuring piece is relative to the bottom surface, and the angle β2 corresponds to a total height of the measuring piece. 如請求項1所述的封裝結構,其中該單元基板包括一防銲層,該防銲層與該量測件為一體。 The packaging structure as described in claim 1, wherein the unit substrate includes a solder-proof layer, and the solder-proof layer and the measuring device are integrated. 如請求項1所述的封裝結構,其中該量測件的該總高度等於該封裝層的厚度。 The packaging structure as described in claim 1, wherein the total height of the measuring component is equal to the thickness of the packaging layer. 一種封裝結構的製造方法,包括以下步驟:設置一基板; 設置至少一突出件,該至少一突出件設置於該基板,各該至少一突出件的一截面寬度隨各該至少一突出件的一高度而改變;設置至少一晶片,各該至少一晶片包括一上表面及一下表面,該下表面連接於該基板;設置一封裝層,該封裝層包覆該至少一晶片及該至少一突出件;研磨該封裝層及該至少一突出件,各該至少一晶片的該上表面與研磨後的該封裝層的一表面間隔一距離,該至少一突出件被研磨而形成至少一量測件,各該至少一量測件的一頂面外露於研磨後的該封裝層,該距離對應於各該至少一量測件的該頂面的截面寬度而為,D1=((W5-W4)/2)*tan(β2)-D3,其中D1為該晶片的該上表面與該封裝層的該表面間隔的該距離,W5為該量測件的一底面的一截面寬度,W4為該量測件的該頂面的該截面寬度,β2為該量測件的一角度,D3為該晶片的該上表面至該基板的該表面的一距離,該量測件的該頂面相對於該底面,該角度β2對應於該量測件的一總高度;以及切割該基板及該封裝層以形成一封裝結構,該基板被切割而形成至少一單元基板。 A method for manufacturing a packaging structure includes the following steps: providing a substrate; providing at least one protrusion, the at least one protrusion being provided on the substrate, the cross-sectional width of each of the at least one protrusion changing with the height of each of the at least one protrusion; providing at least one chip, the at least one chip including an upper surface and a lower surface, the lower surface being connected to the substrate; providing a packaging layer, the packaging layer covering the at least one chip and the at least one protrusion; grinding the packaging layer and the at least one protrusion, the upper surface of each of the at least one chip being spaced a distance from a surface of the ground packaging layer, the at least one protrusion being ground to form at least one measuring piece, the top surface of each of the at least one measuring piece being exposed to the ground surface. The packaging layer of the chip, the distance corresponds to the cross-sectional width of the top surface of each of the at least one measuring piece, D1=((W5-W4)/2)*tan(β2)-D3, wherein D1 is the distance between the upper surface of the chip and the surface of the packaging layer, W5 is a cross-sectional width of a bottom surface of the measuring piece, W4 is the cross-sectional width of the top surface of the measuring piece, β2 is an angle of the measuring piece, D3 is a distance from the upper surface of the chip to the surface of the substrate, the top surface of the measuring piece is relative to the bottom surface, and the angle β2 corresponds to a total height of the measuring piece; and cutting the substrate and the packaging layer to form a packaging structure, the substrate is cut to form at least one unit substrate. 如請求項4所述的封裝結構的製造方法,其中該封裝結構包括該單元基板、該晶片、該量測件及該封裝層。 A method for manufacturing a packaging structure as described in claim 4, wherein the packaging structure includes the unit substrate, the chip, the measuring device and the packaging layer. 如請求項4所述的封裝結構的製造方法,其中研磨後的該封裝層具有一厚度,該至少一突出件的一總高度大於該厚度。 A method for manufacturing a packaging structure as described in claim 4, wherein the packaging layer after grinding has a thickness, and a total height of the at least one protrusion is greater than the thickness. 如請求項4所述的封裝結構的製造方法,其中在研磨該封裝層及該至少一突出件之後且在形成該封裝結構之前,更包括以下步驟:切除該量測件,一切割線位於該至少一晶片及該量測件之間。 The manufacturing method of the package structure as described in claim 4, wherein after grinding the package layer and the at least one protruding member and before forming the package structure, the following step is further included: cutting off the measuring member, a cutting line is located between the at least one chip and the measuring member. 如請求項7所述的封裝結構的製造方法,其中切除該量測件後形成的該封裝結構包括該單元基板、該晶片及該封裝層。 The manufacturing method of the package structure as described in claim 7, wherein the package structure formed after cutting off the measuring component includes the unit substrate, the chip and the package layer. 如請求項4所述的封裝結構的製造方法,其中該基板包括一防銲層,該防銲層與該至少一突出件為一體。 A method for manufacturing a packaging structure as described in claim 4, wherein the substrate includes a solder-proof layer, and the solder-proof layer and the at least one protruding member are integrated. 如請求項4所述的封裝結構的製造方法,其中該至少一突出件位於該基板的邊緣。A method for manufacturing a packaging structure as described in claim 4, wherein the at least one protrusion is located at an edge of the substrate.
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