TWI844365B - Organic film forming device and cleaning method of organic film forming device - Google Patents

Abstract

The present invention provides an organic film forming device capable of fully removing foreign matter inside a chamber, and a cleaning method for the organic film forming device. The organic film forming device of the embodiment includes: a chamber having an opening for carrying in or out a workpiece, capable of maintaining a gas environment further reduced in pressure than atmospheric pressure; a door capable of opening and closing the opening of the chamber; an exhaust part capable of exhausting the inside of the chamber; a support part disposed inside the chamber, capable of supporting the workpiece; a heating part disposed inside the chamber, capable of heating the workpiece; and at least one nozzle disposed inside the chamber, capable of supplying a cleaning gas to the opening of the chamber.

Description

Organic film forming device, and cleaning method of organic film forming device

Embodiments of the present invention relate to an organic film forming apparatus and a method for cleaning the organic film forming apparatus.

The organic film forming device includes, for example, a chamber capable of maintaining a gas environment further reduced in pressure from atmospheric pressure, and a heater disposed inside the chamber and heating a workpiece. Such an organic film forming device forms an organic film by heating a substrate coated with a solution containing an organic material and a solvent in a gas environment further reduced in pressure from atmospheric pressure, and evaporating the solvent contained in the solution. (For example, refer to Patent Document 1) Here, when the solution is heated, the substance contained in the solution sometimes sublimates (gasifies). The components contained in the sublimates sometimes become solid and adhere to the inner wall of the chamber, etc., which has a lower temperature than the heated workpiece. If solids attached to the inner wall of the chamber are peeled off from the inner wall of the chamber, they may become foreign matter such as particles and adhere to the surface of the workpiece.

Therefore, cleaning is performed regularly or as needed to remove solids attached to the inner wall of the chamber. For example, in a technical field different from an organic film forming apparatus, such as a semiconductor manufacturing apparatus, a technique has been proposed for exhausting foreign matter in a chamber by sequentially exhausting the chamber and supplying a cleaning gas to the chamber while the chamber is sealed. (See Patent Document 2) However, it was eventually discovered that in an organic film forming apparatus, even if cleaning is performed like that of a semiconductor manufacturing apparatus (for example, exhausting the chamber and supplying a cleaning gas to the chamber while the chamber is sealed), foreign matter cannot be fully removed. Therefore, it is desirable to develop an organic film forming apparatus that can sufficiently remove foreign matter such as particles inside a chamber, and a method for cleaning the organic film forming apparatus. [Prior art literature] [Patent literature]

[Patent document 1] Japanese Patent Publication No. 2019-184229 [Patent document 2] Japanese Patent Publication No. 2002-184708

[The problem that the invention wants to solve]

The problem to be solved by the present invention is to provide an organic film forming device capable of sufficiently removing foreign matter inside a chamber, and a cleaning method for the organic film forming device. [Means for solving the problem]

The organic film forming device of the embodiment includes: a chamber having an opening for carrying in or out a workpiece, capable of maintaining a gas environment further reduced in pressure than atmospheric pressure; a door capable of opening and closing the opening of the chamber; an exhaust part capable of exhausting the interior of the chamber; a support part disposed inside the chamber, capable of supporting the workpiece; a heating part disposed inside the chamber, capable of heating the workpiece; and at least one nozzle disposed inside the chamber, capable of supplying clean gas to the opening of the chamber. [Effect of the invention]

According to an embodiment of the present invention, an organic film forming apparatus capable of sufficiently removing foreign matter inside a chamber and a cleaning method of the organic film forming apparatus are provided.

In the following, the embodiments are exemplified with reference to the accompanying drawings. In addition, in each drawing, the same components are marked with the same symbols and detailed descriptions are appropriately omitted.

FIG. 1 is a schematic three-dimensional diagram of an organic film forming device 1 for illustrating the present embodiment. In addition, the X direction, Y direction, and Z direction in FIG. 1 represent three directions that are orthogonal to each other. The up and down direction in this specification may be set to the Z direction.

The workpiece 100 before forming an organic film has a substrate and a solution applied to the upper surface of the substrate. The substrate can be, for example, a glass substrate or a semiconductor chip. However, the substrate is not limited to the examples. The solution includes, for example, an organic material and a solvent. The organic material is not particularly limited as long as it can be dissolved by the solvent. The solution can be, for example, a varnish containing polyamide. However, the solution is not limited to the examples.

As shown in FIG. 1 , the organic film forming apparatus 1 is provided with, for example, a chamber 10 , an exhaust unit 20 , a processing unit 30 , a cooling unit 40 , a cleaning unit 50 , and a controller 60 .

The controller 60 includes, for example, a computing unit such as a central processing unit (CPU) and a storage unit such as a memory. The controller 60 may be, for example, a computer. The controller 60 controls the operation of each element provided in the organic film forming apparatus 1 based on a control program stored in the storage unit.

The chamber 10 has an airtight structure capable of maintaining a gas environment that is further depressurized than atmospheric pressure. The chamber 10 is box-shaped. The external shape of the chamber 10 is not particularly limited. The external shape of the chamber 10 can be, for example, a rectangular parallelepiped. The chamber 10 can be formed of, for example, a metal such as stainless steel.

In the Y direction, a flange 11 may be provided at one end of the chamber 10. A sealing material 12 such as an O-ring may be provided on the flange 11. The opening 11a of the chamber 10 on the side provided with the flange 11 can be opened and closed by a door 13. The door 13 is pushed against the flange 11 (sealing material 12) by a driving device not shown in the figure, thereby closing the opening 11a of the chamber 10 in an airtight manner. The door 13 is moved away from the flange 11 by a driving device not shown in the figure, thereby opening the opening 11a of the chamber 10, so that the workpiece 100 can be carried in or out through the opening 11a. In addition, by opening the opening 11a of the chamber 10, it is possible to use the cleaning unit 50 described later for cleaning. That is, the chamber 10 has the opening 11a for carrying in or out the workpiece 100, and can maintain a gas environment that is further reduced in pressure than atmospheric pressure. The door 13 can open and close the opening 11a of the chamber 10.

In the Y direction, a flange 14 may be provided at the other end of the chamber 10. A sealing material 12 such as an O-ring may be provided on the flange 14. The opening of the chamber 10 on the side where the flange 14 is provided can be opened and closed by a cover 15. For example, the cover 15 may be detachably provided on the flange 14 using a fastening member such as a screw. When performing maintenance, the opening of the chamber 10 on the side where the flange 14 is provided is exposed by removing the cover 15.

A cooling unit 16 may be provided on the outer wall of the chamber 10 and the outer surface of the door 13. The cooling unit 16 is connected to a cooling water supply unit (not shown). The cooling unit 16 may be, for example, a water jacket. If the cooling unit 16 is provided, the temperature of the outer wall of the chamber 10 or the outer surface of the door 13 may be suppressed from being higher than a predetermined temperature.

The exhaust section 20 exhausts the interior of the chamber 10. The exhaust section 20 has, for example, a first exhaust section 21, a second exhaust section 22, and a third exhaust section 23. The first exhaust section 21 is, for example, connected to the exhaust port 17, which is provided on the bottom surface of the chamber 10. The first exhaust section 21 has, for example, an exhaust pump 21a and a pressure control section 21b. The exhaust pump 21a can be an exhaust pump that performs rough exhaust from atmospheric pressure to a specified pressure. Therefore, the exhaust pump 21a has a larger exhaust volume than the exhaust pump 22a described later. The exhaust pump 21a can be, for example, a dry vacuum pump, etc.

The pressure control unit 21b is, for example, disposed between the exhaust port 17 and the exhaust pump 21a. The pressure control unit 21b controls the internal pressure of the chamber 10 to a predetermined pressure based on the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber 10. The pressure control unit 21b can be, for example, an automatic pressure controller (APC).

In addition, a cold trap 24 for capturing discharged sublimates is provided between the exhaust port 17 and the pressure control unit 21b. In addition, a valve 25 is provided between the exhaust port 17 and the cold trap 24. The valve 25 plays a role in preventing the fluid from flowing into the cold trap 24 in the cooling process described later.

The second exhaust section 22 is connected to the exhaust port 18, for example, and the exhaust port 18 is provided on the bottom surface of the chamber 10. The second exhaust section 22 has, for example, an exhaust pump 22a and a pressure control section 22b. The exhaust pump 22a exhausts to a lower specified pressure after the exhaust pump 21a performs rough exhaust. The exhaust pump 22a has, for example, an exhaust capacity capable of exhausting to a molecular flow region of high vacuum. For example, the exhaust pump 22a can be a turbo molecular pump (TMP) or the like.

The pressure control unit 22b is, for example, disposed between the exhaust port 18 and the exhaust pump 22a. The pressure control unit 22b controls the internal pressure of the chamber 10 to a predetermined pressure based on the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber 10. The pressure control unit 22b may be, for example, an APC. In addition, similarly to the first exhaust unit 21, a cold trap 24 and a valve 25 may be disposed between the exhaust port 18 and the pressure control unit 21b.

In addition, the above example shows that the exhaust port 17 and the exhaust port 18 are provided on the bottom surface of the chamber 10, but the exhaust port 17 and the exhaust port 18 may be provided on the ceiling surface of the chamber 10. If the exhaust port 17 and the exhaust port 18 are provided on the bottom surface or the ceiling surface of the chamber 10, an airflow toward the bottom surface or the ceiling surface of the chamber 10 can be formed inside the chamber 10.

Here, when the workpiece 100 coated with a solution containing an organic material and a solvent is heated, the substance contained in the solution may sublime (gasify). The components contained in the sublimates may become solid and adhere to the inner wall of the chamber 10, etc., which has a lower temperature than the heated workpiece 100. If the solid adhered to the inner wall of the chamber 10, etc. is peeled off from the inner wall of the chamber 10, there is a possibility that it becomes foreign matter such as particles and adheres to the surface of the workpiece 100.

In this case, if an airflow is formed inside the chamber 10 toward the bottom surface or ceiling surface of the chamber 10, foreign matter such as sublimates or particles can be easily discharged to the outside of the chamber 10 along with the airflow. Therefore, foreign matter such as particles can be prevented from being attached to the workpiece 100.

The processing section 30 includes, for example, a frame 31, a heating section 32, a support section 33, a heat equalizing section 34, a heat equalizing plate support section 35, and a cover 36. Inside the processing section 30, a processing area 30a and a processing area 30b are provided. The processing area 30a and the processing area 30b are spaces for processing the workpiece 100. The workpiece 100 is supported inside the processing area 30a and the processing area 30b. The processing area 30b is provided above the processing area 30a. In addition, the case where two processing areas are provided is illustrated, but it is not limited thereto. Only one processing area may be provided, or more than three processing areas may be provided. In this embodiment, as an example, the case of setting two processing areas is illustrated, but the same consideration can also be given to the case of setting one processing area or three or more processing areas.

The processing area 30a and the processing area 30b are disposed between the heating parts 32. The processing area 30a and the processing area 30b are surrounded by a heat equalizing part 34 (an upper heat equalizing plate 34a, a lower heat equalizing plate 34b, a side heat equalizing plate 34c, and a side heat equalizing plate 34d).

As described later, the upper heat spreader 34a and the lower heat spreader 34b are formed by a plurality of plate-shaped components supported by a plurality of heat spreader support portions 35. Therefore, the processing area 30a and the space inside the chamber 10 are connected through gaps provided between the upper heat spreaders 34a and between the lower heat spreaders 34b. In addition, gaps are also formed between the upper heat spreader 34a (lower heat spreader 34b) and the side heat spreader 34c, and between the upper heat spreader 34a (lower heat spreader 34b) and the side heat spreader 34d. Therefore, if the pressure of the space between the inner wall of the chamber 10 and the processing portion 30 is reduced, the space inside the processing area 30a is also reduced. The processing area 30b has the same structure as the processing area 30a, so the description thereof is omitted.

If the pressure of the space between the inner wall of the chamber 10 and the processing unit 30 is reduced, the heat released from the processing area 30a and the processing area 30b to the outside can be suppressed. That is, the heating efficiency or the heat storage efficiency can be improved. Therefore, the power applied to the heater 32a described later can be reduced. In addition, if the power applied to the heater 32a can be reduced, the temperature of the heater 32a can be suppressed from becoming higher than a predetermined temperature, so the life of the heater 32a can be extended.

In addition, since the heat storage efficiency is improved, the temperature of the processing area 30a and the processing area 30b can be quickly increased. Therefore, it is also possible to cope with the processing that requires a rapid temperature increase. In addition, the temperature of the outer wall of the chamber 10 can be suppressed from rising, so the cooling unit 16 can be simplified.

The frame 31 has a skeleton structure including a thin and long plate or steel. The outer shape of the frame 31 can be set to be the same as the outer shape of the chamber 10. The outer shape of the frame 31 can be set to be a rectangular parallelepiped, for example.

There are multiple heating parts 32. The heating parts 32 can be set at the lower part of the processing area 30a and the processing area 30b, and at the upper part of the processing area 30a and the processing area 30b. The heating part 32 set at the lower part of the processing area 30a and the processing area 30b is called the lower heating part. The heating part 32 set at the upper part of the processing area 30a and the processing area 30b is called the upper heating part. The lower heating part and the upper heating part are opposite to each other. In addition, when multiple processing areas are overlapped in the up-down direction, the upper heating part of the processing area set at the lower side can also be used as the lower heating part of the processing area set at the upper side.

The heating unit 32 is provided inside the chamber 10 to heat the workpiece 100. For example, the lower surface (back surface) of the workpiece 100 supported in the processing area 30a is heated by the heating unit 32 provided at the lower part of the processing area 30a. The upper surface (front surface) of the workpiece 100 supported in the processing area 30a is heated by the heating unit 32 used for both the processing area 30a and the processing area 30b.

The lower surface (back surface) of the workpiece 100 supported in the processing area 30b is heated by the heating unit 32 used in both the processing area 30a and the processing area 30b. The upper surface (front surface) of the workpiece 100 supported in the processing area 30b is heated by the heating unit 32 provided at the upper part of the processing area 30b. If so, the number of heating units 32 can be reduced, thereby achieving a reduction in power consumption, a reduction in manufacturing costs, and space saving, etc.

The plurality of heating parts 32 each have at least one heater 32a and a pair of holders 32b. In addition, the following describes the case where the plurality of heaters 32a are provided. The heater 32a is in the shape of a rod and extends along the Y direction between the pair of holders 32b. The plurality of heaters 32a can be arranged in an array along the X direction. The plurality of heaters 32a can be arranged at equal intervals, for example. The heater 32a can be, for example, a sheathed heater, a far infrared heater, a far infrared lamp, a ceramic heater, a cartridge heater, etc. In addition, various heaters can also be covered by a quartz cover.

In addition, in this specification, various heaters covered with quartz caps are also referred to as "rod-shaped heaters". In addition, the cross-sectional shape of the "rod-shaped" is not limited, and for example, it also includes cylindrical or prism shapes. In addition, the heater 32a is not limited to the example. The heater 32a can heat the workpiece 100 in a gas environment that is further reduced from atmospheric pressure. In other words, the heater 32a can use the heat energy obtained by radiation.

The specifications, number, intervals, etc. of the multiple heaters 32a in the upper heating part and the lower heating part can be appropriately determined according to the composition of the solution to be heated (the temperature of the solution to be heated), the size of the workpiece 100, etc. The specifications, number, intervals, etc. of the multiple heaters 32a can be appropriately determined by performing simulations or experiments.

In addition, the space where the plurality of heaters 32a are disposed is surrounded by the holder 32b, the upper heat spreader 34a, the lower heat spreader 34b, the side heat spreader 34c, and the side heat spreader 34d. Gaps are provided between the upper heat spreaders 34a and between the lower heat spreaders 34b. Therefore, part of the cooling gas supplied from the cooling unit 40 described later to the space where the plurality of heaters 32a are disposed flows into the processing area 30a or the processing area 30b. However, the space where the plurality of heaters 32a are disposed can be regarded as a substantially closed space. Therefore, by supplying cooling gas from the cooling unit 40 to the space where the plurality of heaters 32a are installed, the plurality of heaters 32a, the upper heat spreader 34a, the lower heat spreader 34b, the side heat spreader 34c, and the side heat spreader 34d can be cooled.

A pair of holders 32b extend along the X direction (for example, the long side direction of the processing area 30a and the processing area 30b). A pair of holders 32b face each other in the Y direction. One of the holders 32b is fixed to the end face of the frame 31 on the door 13 side. The other holder 32b is fixed to the end face of the frame 31 on the opposite side to the door 13 side. A pair of holders 32b can be fixed to the frame 31 using fastening members such as screws, for example. A pair of holders 32b holds the non-heat-releasing portion near the end of the heater 32a. A pair of holders 32b can be formed, for example, by a slender metal plate or steel section. The material of the pair of holders 32b is not particularly limited, and it is preferably a material having heat resistance and corrosion resistance. The material of the pair of holders 32b can be, for example, stainless steel.

The support part 33 is disposed inside the chamber 10 to support the workpiece 100. For example, the support part 33 supports the workpiece 100 between the upper heating part and the lower heating part. A plurality of support parts 33 may be provided. The plurality of support parts 33 are provided at the lower part of the processing area 30a and the lower part of the processing area 30b. The plurality of support parts 33 may be provided as rod-shaped bodies.

One end portion (the upper end portion) of the plurality of supporting portions 33 contacts the lower surface (back surface) of the workpiece 100. Therefore, the shape of one end portion of the plurality of supporting portions 33 is preferably set to be hemispherical or the like. If the shape of one end portion of the plurality of supporting portions 33 is hemispherical, it is possible to suppress damage to the lower surface of the workpiece 100. In addition, the contact area between the lower surface of the workpiece 100 and the plurality of supporting portions 33 can be reduced, thereby reducing the heat transferred from the workpiece 100 to the plurality of supporting portions 33.

The workpiece 100 is heated by utilizing the heat energy obtained by radiation in a gas environment with a further reduced pressure from a relatively high atmospheric pressure. Therefore, the distance from the upper heating part to the upper surface of the workpiece 100 and the distance from the lower heating part to the lower surface of the workpiece 100 become the distances within which the heat energy obtained by radiation can reach the workpiece 100.

The other end (lower end) of the plurality of supporting parts 33 can be fixed to, for example, a plurality of rod-shaped members or plate-shaped members installed between a pair of frames 31. In this case, the plurality of supporting parts 33 are preferably installed on the rod-shaped members in a detachable manner. If so, maintenance and other operations become easy.

The number, arrangement, and spacing of the multiple support parts 33 can be appropriately changed according to the size or rigidity (bending) of the workpiece 100. The material of the multiple support parts 33 is not particularly limited, but is preferably a material having heat resistance and corrosion resistance. The material of the multiple support parts 33 can be, for example, stainless steel.

The heat equalizing part 34 has a plurality of upper heat equalizing plates 34a, a plurality of lower heat equalizing plates 34b, a plurality of side heat equalizing plates 34c, and a plurality of side heat equalizing plates 34d. The plurality of upper heat equalizing plates 34a, a plurality of lower heat equalizing plates 34b, a plurality of side heat equalizing plates 34c, and a plurality of side heat equalizing plates 34d are in a plate shape.

A plurality of upper heat spreaders 34a are arranged on the side of the lower heating section (the side of the workpiece 100) in the upper heating section. The plurality of upper heat spreaders 34a are arranged remotely from the plurality of heaters 32a. That is, a gap is provided between the upper surface of the plurality of upper heat spreaders 34a and the lower surface of the plurality of heaters 32a. The plurality of upper heat spreaders 34a are arranged in an array along the X direction. A gap is provided between the plurality of upper heat spreaders 34a. If a gap is provided, the dimensional difference caused by thermal expansion can be absorbed. Therefore, the deformation of the upper heat spreaders 34a due to interference with each other can be suppressed. In addition, as described above, the pressure of the space of the processing area 30a and the processing area 30b can be reduced through the gap.

A plurality of lower heat spreaders 34b are arranged on the upper heating portion side (the workpiece 100 side) in the lower heating portion. The plurality of lower heat spreaders 34b are arranged remotely from the plurality of heaters 32a. That is, a gap is provided between the lower surface of the plurality of lower heat spreaders 34b and the upper surface of the plurality of heaters 32a. The plurality of lower heat spreaders 34b are arranged in an array along the X direction. A gap is provided between the plurality of lower heat spreaders 34b. If a gap is provided, the dimensional difference caused by thermal expansion can be absorbed. Therefore, the lower heat spreaders 34b can be prevented from interfering with each other and being deformed. In addition, the pressure of the space of the processing area 30a and the processing area 30b can be reduced through the gap.

The side heat spreaders 34c are respectively disposed on the sides of the processing area 30a and the processing area 30b in the X direction. The side heat spreaders 34c can be disposed on the inner side of the cover 36. In addition, as described above, a gap is provided between the side heat spreaders 34c and the upper heat spreader 34a or the lower heat spreader 34b. The pressure in the space of the processing area 30a and the processing area 30b can be reduced through the gap.

The side heat spreaders 34d are respectively arranged on the sides of the processing area 30a and the processing area 30b in the Y direction. The side heat spreaders 34d arranged on the side of the door 13 can be arranged on the door 13 with a space between them and the cover 36. The side heat spreaders 34d arranged on the side of the cover 15 can be arranged on the inner side of the cover 36. In addition, as described above, a gap is provided between the side heat spreaders 34d and the upper heat spreaders 34a or the lower heat spreaders 34b. The pressure of the space of the processing area 30a and the processing area 30b can be reduced through the gap.

In the present embodiment, the gaps between the upper heat spreaders 34a and between the lower heat spreaders 34b are formed to be larger than the gaps between the upper heat spreader 34a (lower heat spreader 34b) and the side heat spreader 34c and between the upper heat spreader 34a (lower heat spreader 34b) and the side heat spreader 34d. The reason will be described later.

As described above, the plurality of heaters 32a are in the shape of rods and are arranged at predetermined intervals. When the heater 32a is in the shape of rods, heat is radiated radially from the central axis of the heater 32a. In this case, the shorter the distance between the central axis of the heater 32a and the heated portion, the higher the temperature of the heated portion. Therefore, when the workpiece 100 is held in a manner facing the plurality of heaters 32a, the area of the workpiece 100 located directly above or below the heater 32a has a higher temperature than the area of the workpiece 100 located directly above or below the space between the plurality of heaters 32a. That is, if the workpiece 100 is directly heated using the plurality of heaters 32a in the shape of rods, an in-plane distribution is generated in the temperature of the heated workpiece 100.

If the temperature of the workpiece 100 is distributed in the plane, the quality of the formed organic film may be degraded. For example, bubbles may be generated in the portion where the temperature is high, or the composition of the organic film may change in the portion where the temperature is high.

In the organic film forming apparatus 1 of the present embodiment, the plurality of upper heat spreaders 34a and the plurality of lower heat spreaders 34b described above are provided. Therefore, the heat radiated from the plurality of heaters 32a is incident on the plurality of upper heat spreaders 34a and the plurality of lower heat spreaders 34b, and is radiated toward the workpiece 100 while propagating in the surface direction inside these heat spreaders. As a result, the in-plane distribution of the temperature of the workpiece 100 can be suppressed, and the quality of the formed organic film can be improved.

The plurality of upper heat spreaders 34a and the plurality of lower heat spreaders 34b spread the incident heat in the surface direction, so the material of these heat spreaders is preferably a material with high thermal conductivity. The plurality of upper heat spreaders 34a and the plurality of lower heat spreaders 34b can be, for example, aluminum, copper, stainless steel, etc. In addition, when using a material that is easily oxidized, such as aluminum or copper, it is preferred to set a layer containing a material that is not easily oxidized on the surface.

A portion of the heat radiated from the plurality of upper heat spreaders 34a and the plurality of lower heat spreaders 34b is directed toward the side of the processing area. Therefore, the side heat spreaders 34c and 34d described above are provided at the side of the processing area. The heat incident on the side heat spreaders 34c and 34d is propagated along the surface direction of the side heat spreaders 34c and 34d, and a portion of the heat is radiated toward the workpiece 100. Therefore, the heating efficiency of the workpiece 100 can be improved.

The material of the side heat spreader plates 34c and 34d may be the same as the material of the upper heat spreader plate 34a and the lower heat spreader plate 34b described above.

In addition, the above example illustrates a case where a plurality of upper heat spreaders 34a and a plurality of lower heat spreaders 34b are arranged in the X direction, but at least one of the upper heat spreaders 34a and the lower heat spreaders 34b may be a single plate-shaped member.

The plurality of heat spreader support parts 35 are arranged in an array along the X direction. The heat spreader support parts 35 can be arranged directly below the upper heat spreaders 34a in the X direction. The plurality of heat spreader support parts 35 can be fixed to a pair of holders 32b using fastening members such as screws. The pair of heat spreader support parts 35 can support both ends of the upper heat spreader 34a in a detachable manner. In addition, the plurality of heat spreader support parts 35 supporting the plurality of lower heat spreaders 34b can also have the same structure.

If the upper and lower heat spreaders 34a and 34b are supported by a pair of heat spreader support parts 35, even if the upper and lower heat spreaders 34a and 34b thermally expand, interference by the upper and lower heat spreaders 34a and 34b can be suppressed. Therefore, deformation of the upper and lower heat spreaders 34a and 34b can be suppressed.

The cover 36 is plate-shaped and covers the upper surface, the bottom surface, and the side surface of the frame 31. That is, the inside of the frame 31 is covered by the cover 36. However, the cover 36 on the door 13 side may be provided on the door 13, for example.

The cover 36 surrounds the processing area 30 a and the processing area 30 b , but a gap is provided at a boundary between the upper surface and the side surface of the frame 31 , a boundary between the side surface and the bottom surface of the frame 31 , and near the door 13 .

In addition, the cover 36 provided on the upper surface and the bottom surface of the frame 31 is divided into a plurality of parts. In addition, gaps are provided between the divided covers 36. That is, the internal space of the processing section 30 (processing area 30a, processing area 30b) is connected to the internal space of the chamber 10 through these gaps. Therefore, the pressure of the processing area 30a, processing area 30b can be made the same as the pressure of the space between the inner wall of the chamber 10 and the cover 36. The cover 36 can be formed of, for example, stainless steel.

The cooling section 40 supplies cooling gas to the area where the heating section 32 is provided. For example, the cooling section 40 cools the uniform heat section 34 surrounding the processing area 30a and the processing area 30b with cooling gas, and indirectly cools the workpiece 100 in a high temperature state with the cooled uniform heat section 34. In addition, for example, the cooling section 40 may supply cooling gas to the workpiece 100 to directly cool the workpiece 100 in a high temperature state.

That is, the cooling unit 40 can indirectly and directly cool the workpiece 100. In addition, the cooling unit 40 can have a role as a cleaning unit 50 for supplying a cleaning gas G to be described later to the processing area 30a and the processing area 30b in a cleaning process to be described later.

The cooling unit 40 has, for example, a first gas supply path 40a and a second gas supply path 40b. First, the first gas supply path 40a is described. The first gas supply path 40a has a nozzle 41, a gas source 42, a gas control unit 43, and a switching valve 54.

As shown in FIG1 , the nozzle 41 can be connected to a space where a plurality of heaters 32a are provided. The nozzle 41, for example, passes through the cover 36, so that it can be installed on the side heat spreader 34c or the frame 31, etc. A plurality of nozzles 41 can be provided in the Y direction (see FIG3 ). In addition, the number or arrangement of the nozzles 41 can be changed as appropriate. For example, in the X direction, the nozzle 41 can be provided on one side of the processing section 30, or the nozzle 41 can be provided on both sides of the processing section 30.

The gas source 42 supplies cooling gas to the nozzle 41. The gas source 42 may be, for example, a high-pressure gas cylinder, a factory pipe, etc. In addition, a plurality of gas sources 42 may be provided.

The cooling gas is preferably a gas that is not easy to react with the heated workpiece 100. The cooling gas can be, for example, nitrogen, a rare gas, etc. The rare gas is, for example, argon or helium. If the cooling gas is nitrogen, the operating cost can be reduced. Since helium has a high thermal conductivity, if helium is used as the cooling gas, the cooling time can be shortened. The temperature of the cooling gas can be, for example, set to below room temperature (for example, 25°C).

The gas control unit 43 is provided between the nozzle 41 and the gas source 42. The gas control unit 43 can control, for example, supply and stop of the cooling gas, or at least one of the flow rate and flow rate of the cooling gas.

In addition, the timing of supplying the cooling gas may be set after the heating treatment of the workpiece 100 is completed. In addition, the so-called completion of the heating treatment may be set after the temperature at which the organic film is formed is maintained for a predetermined time.

The switching valve 54 is a valve for switching between the first gas supply path 40 a and the second gas supply path 40 b. The switching valve 54 is disposed between the nozzle 41 and the gas control unit 43 and is outside the chamber 10.

Next, the second gas supply path 40b is described. The second gas supply path 40b is provided for cleaning the interior of the chamber 10 in the cleaning process described later. The second gas supply path 40b discharges foreign matter such as particles in the interior of the chamber 10 to the outside of the chamber 10 through the opening 11a of the chamber 10. For example, the second gas supply path 40b supplies the cleaning gas G to the interior of the processing area 30a and the processing area 30b, thereby forming a gas flow toward the opening 11a of the chamber 10.

In this embodiment, the second gas supply path 40b also functions as the "cleaning section" of the present invention. Hereinafter, the second gas supply path 40b is sometimes referred to as the cleaning section 50.

The cleaning part 50 includes, for example, a nozzle 41, a gas source 52, a gas control part 53, and a switching valve 54. In this case, the cleaning part 50 is connected to the first gas supply path 40a via the switching valve 54.

The gas source 52 supplies the cleaning gas G to the plurality of nozzles 41. The gas source 52 may be, for example, a high-pressure gas cylinder, a factory pipe, etc. In addition, a plurality of gas sources 52 may be provided.

The cleaning gas G is preferably a gas that is not likely to react with the inner wall of the heated chamber 10 or the components inside the chamber 10. The cleaning gas G can be, for example, clean dry air, nitrogen, carbon dioxide (CO ₂ ), a rare gas, etc. The rare gas is, for example, argon or helium. In this case, if the cleaning gas G is clean dry air or nitrogen, the operating cost can be reduced.

The cleaning gas G may be the same as the cooling gas described above, or may be different. When the cleaning gas G is the same as the cooling gas, either the gas source 52 or the gas source 42 may be provided. The temperature of the cleaning gas G may be set to room temperature (e.g., 25°C), for example.

The gas control unit 53 is disposed between the switching valve 54 and the gas source 52. The gas control unit 53 can control the supply and stop of the cleaning gas G, for example. In addition, the gas control unit 53 can also control at least one of the flow rate and flow rate of the cleaning gas G, for example. The flow rate or flow rate of the cleaning gas G can be appropriately changed according to the size of the chamber 10, or the shape, number, and arrangement of the nozzles 41. The flow rate or flow rate of the cleaning gas G can be appropriately obtained, for example, by conducting experiments or simulations.

Next, the operation of the organic film forming apparatus 1 is illustrated. FIG. 2 is a diagram for illustrating the processing steps of the workpiece 100. As shown in FIG. 2 , the organic film forming step includes: a workpiece carrying step, a temperature rising step, a heat treatment step, a cooling step, a workpiece carrying out step, and a cleaning step. First, in the workpiece carrying step, the door 13 is opened and closed away from the flange 11, and the workpiece 100 is carried into the inner space of the chamber 10. After the workpiece 100 is carried into the inner space of the chamber 10, the exhaust unit 20 reduces the pressure of the inner space of the chamber 10 to a specified pressure.

After the internal space of the chamber 10 is depressurized to a predetermined pressure, power is applied to the heater 32a. Then, as shown in FIG2 , the temperature of the workpiece 100 rises. The process of raising the temperature of the workpiece 100 is called a temperature rising process. In the present embodiment, the temperature rising process is performed twice (temperature rising process (1), temperature rising process (2)). In addition, the predetermined pressure only needs to be a pressure at which the polyamide in the solution does not react with the oxygen remaining in the internal space of the chamber 10 and is oxidized. The predetermined pressure can be, for example, 1×10 ^-2 Pa to 100 Pa. That is, it is not necessary to exhaust gas using the second exhaust part 22. After exhaust gas is started using the first exhaust part 21, when the pressure inside the chamber 10 reaches a range of 10 Pa to 100 Pa, the heating part 32 may start heating the workpiece 100.

After the temperature rising process, a heat treatment process is performed. The heat treatment process is a process of maintaining a specified temperature for a specified time. In this embodiment, a heat treatment process (1) and a heat treatment process (2) can be provided. The heat treatment process (1) can be provided, for example, as follows: the workpiece 100 is heated at a first temperature for a specified time to discharge water or gas contained in the solution. The first temperature can be provided, for example, at 100°C to 200°C.

By performing the heat treatment step (1), it is possible to prevent moisture or gas contained in the solution from being included in the organic film as a finished product. In addition, depending on the composition of the solution, the first heat treatment step may be performed multiple times at a different temperature, or the first heat treatment step may be omitted.

The heat treatment step (2) is a step of maintaining the substrate (workpiece 100) coated with the solution at a predetermined pressure and temperature for a predetermined time to form an organic film. The second temperature may be set to a temperature that causes imidization, for example, 300° C. or higher. In this embodiment, the heat treatment step is performed at 400° C. to 600° C. in order to obtain an organic film with a high molecular chain filling degree.

The cooling process is a process for lowering the temperature of the workpiece 100 on which the organic film is formed. In the present embodiment, it is performed after the heating treatment process (2). The workpiece 100 is cooled to a temperature at which it can be carried out. For example, if the temperature of the workpiece 100 to be carried out is room temperature, it is easy to carry out the workpiece 100. However, in the organic film forming device 1, the workpiece 100 is continuously subjected to heat treatment. Therefore, if the temperature of the workpiece 100 is set to room temperature each time the workpiece 100 is carried out, the time for heating the next workpiece 100 is increased. That is, there is a risk of decreased productivity. The temperature of the workpiece 100 to be carried out can be set to, for example, 50°C to 90°C. This carry-out temperature is set as the third temperature.

The controller 60 closes the valve 25 of the first exhaust portion 21. Then, the controller 60 controls the cooling portion 40 to supply cooling gas to the space where the plurality of heaters 32a are installed, thereby indirectly and directly lowering the temperature of the workpiece 100.

Therefore, the gaps between the upper heat spreaders 34a and between the lower heat spreaders 34b are larger than the gaps between the upper heat spreader 34a (lower heat spreader 34b) and the side heat spreader 34c and between the upper heat spreader 34a (lower heat spreader 34b) and the side heat spreader 34d. Thus, when the cooling unit 40 supplies cooling gas, the amount of cooling gas supplied to the workpiece 100 can be increased. In addition, the amount of cooling gas exhausted from the processing area 30a and the processing area 30b can be reduced. Therefore, the workpiece 100 can be efficiently cooled.

In addition, immediately after the organic film is formed, the internal pressure of the chamber 10 is lower than the atmospheric pressure, that is, the gas inside the chamber 10 is less. Therefore, even if cooling gas is supplied to the inside of the chamber 10, the components contained in the sublimates that are solidified by the supplied cooling gas can be suppressed from scattering.

After the output of the vacuum gauge (not shown) for detecting the internal pressure of the chamber 10 becomes the same pressure as the atmospheric pressure, the controller 60 closes the valve 25 of the second exhaust part 22 and opens the valve 25 of the third exhaust part 23 to continuously exhaust the cooling gas.

The controller 60 may also control the switching valve 54 to supply the clean gas G to the space where the plurality of heaters 32a are installed after the detection value of the thermometer (not shown) becomes below 200°C. When the clean gas G is clean dry air (CDA) and the cooling gas is _N2 or a rare gas, the usage of _N2 or a rare gas can be reduced.

In the workpiece unloading process, after the temperature of the workpiece 100 with the organic film formed thereon reaches the third temperature, the supply of the cooling gas or the cleaning gas G introduced into the chamber 10 is stopped. Then, the door 13 is moved away from the flange 11, and the workpiece 100 is unloaded.

As described above, when the sublimates come into contact with a component having a lower temperature than the heated workpiece 100, components contained in the sublimates may sometimes become solid and adhere to the component.

However, since the upper and lower heat spreaders 34a and 34b are heated, the components contained in the sublimates are prevented from being attached to the upper and lower heat spreaders 34a and 34b. In addition, as described above, since an airflow is formed inside the chamber 10 toward the bottom surface (or ceiling surface) of the chamber 10 where the exhaust port 17 or the exhaust port 18 is provided, the sublimates are discharged to the outside of the chamber 10 along with the airflow.

As described above, since the sublimates are discharged outside the chamber 10, it is considered that the components contained in the sublimates can be suppressed from being attached to the workpiece 100. Therefore, conventionally, after the workpiece 100 is unloaded, the next workpiece 100 is loaded into the chamber 10, and the above process is repeated.

However, it was eventually found that a small amount of sublimates actually adhered to the inner wall of the chamber 10. By repeatedly performing the organic film formation process, a small amount of sublimates also repeatedly adhered to the inner wall of the chamber 10. As a result, the solid generated from the sublimates grew larger. When the solid generated from the sublimates grew larger to a certain extent, it fell off from the inner wall of the chamber 10. The solid that fell off from the inner wall of the chamber 10 may become foreign matter such as particles and adhere to the surface of the workpiece 100.

Generally, an anti-sticking plate is provided to prevent the sublimation product from adhering to the inner wall of the chamber, and the anti-sticking plate is replaced regularly. However, the replacement operation of the above method is complicated. Therefore, the inventors of the present invention have studied the cleaning method of removing the solid generated from the sublimation product from the inner wall of the chamber 10, etc.

Next, the function of the cleaning section 50 and the cleaning method of the organic film forming device of this embodiment are described. FIG. 3 is a schematic cross-sectional view for illustrating the function of the cleaning section 50. In addition, in order to avoid complexity, the components installed inside the chamber 10 are omitted from the description.

As shown in FIG3 , when the opening 11a of the chamber 10 is opened (when the door 13 is away from the flange 11), the cleaning unit 50 supplies the cleaning gas G to the inside of the chamber 10. For example, when the opening 11a of the chamber 10 is opened, the controller 60 controls the gas control unit 53 to flow the cleaning gas G from the nozzle 41 into the heating unit 32. The cleaning gas G is supplied from the heating unit 32 to the inside of the chamber 10.

As described above, the gaps between the upper heat spreaders 34a and the lower heat spreaders 34b are larger than the gaps between the upper heat spreader 34a (lower heat spreader 34b) and the side heat spreader 34c and between the upper heat spreader 34a (lower heat spreader 34b) and the side heat spreader 34d. Therefore, when the cleaning part 50 supplies the cleaning gas G, the amount of the cleaning gas G supplied to the processing area 30a and the processing area 30b can be increased.

The clean gas G supplied to the inside of the chamber 10 is discharged to the outside of the chamber 10 through the opening 11a of the chamber 10. At this time, foreign matter such as sublimates or particles in the inside of the chamber 10 is discharged to the outside of the chamber 10 along with the airflow of the clean gas G. In addition, the heater 32a, the holder 32b, the heat spreader 34 and the heat spreader support 35 rub due to thermal expansion. Due to the friction of these components, tiny metal pieces are generated. The metal pieces are also included in the foreign matter. In addition, if an airflow is formed inside the chamber 10, the components (solid) of the sublimates attached to the inner wall of the chamber 10 or the components arranged inside the chamber 10 can be peeled off and discharged to the outside of the chamber 10.

In this case, the cleaning gas G may be supplied to the interior of the chamber 10 periodically or as needed. That is, a cleaning process may be provided separately from the process of processing the workpiece 100, and the cleaning gas G may be supplied to the interior of the chamber 10 in the cleaning process.

In addition, the cleaning gas G may be supplied to the interior of the chamber 10 during the period between the workpiece 100 that has been processed being carried out of the chamber 10 and the workpiece 100 that is to be processed next being carried into the chamber 10. That is, even when a series of steps of processing the workpiece 100 are being performed, the interior of the chamber 10 may be cleaned by the cleaning unit 50 when there is no workpiece 100.

If the cleaning section 50 is provided, foreign matter such as sublimates or particles inside the chamber 10 can be discharged to the outside of the chamber 10 along with the airflow of the cleaning gas G. In addition, the components (solids) of the sublimates attached to the inner wall of the chamber 10 can be peeled off and discharged to the outside of the chamber 10. That is, if the cleaning section 50 is provided, foreign matter inside the chamber 10 can be fully removed.

Next, the effect of the cleaning section 50 is further described. FIG. 4 is a graph showing the combination of the discharge of particles by the exhaust section 20 and the discharge of particles by the cleaning section 50. When the particles are discharged by the exhaust section 20, the following operation is repeated 10 times: the interior of the chamber 10 is depressurized and the interior of the chamber 10 after depressurization is restored to atmospheric pressure. When the particles are discharged by the cleaning section 50, the cleaning gas G is supplied from the plurality of nozzles 41 simultaneously after the discharge of particles by the exhaust section 20. That is, the discharge of particles by the exhaust section 20 is performed in advance before the discharge of particles by the cleaning section 50.

As can be seen from FIG. 4 , if the particles can be discharged by the exhaust section 20 and the particles can be discharged by the cleaning section 50 , particles of various sizes can be discharged.

FIG5 is a graph showing the case where only the particles are discharged using the cleaning section 50. When the particles are discharged using the cleaning section 50, the cleaning gas G is supplied simultaneously from the plurality of nozzles 41. As can be seen from FIG5, even when only the particles are discharged using the cleaning section 50, particles of various sizes can be discharged.

Here, a comparison is made between FIG. 4 and FIG. 5. As can be seen from the comparison between FIG. 4 and FIG. 5, whether the exhaust section 20 is used in advance or not, the amount of particles discharged immediately after the exhaust section 50 starts to discharge particles is not much different. This means that it is difficult to fully remove particles using the exhaust section 20. That is, if the exhaust of the interior of the chamber 10 and the supply of gas to the interior of the chamber 10 can be performed sequentially while the chamber 10 is sealed, even if foreign matter such as particles can be removed to some extent, foreign matter such as particles cannot be fully removed. In contrast, if the cleaning section 50 can be used for cleaning, foreign matter inside the chamber 10 can be fully removed as can be seen from FIG. 5.

Here, the detection amount of particles of various sizes when the time elapsed from the start of particle discharge using the cleaning section 50 is between 3 min and 5 min is compared in FIG. 4 and FIG. 5. According to the comparison between FIG. 4 and FIG. 5, when the time elapsed from the start of particle discharge using the cleaning section 50 is between 3 min and 5 min, the particle detection amount of FIG. 4 is smaller. Therefore, the particle discharge time using the cleaning section 50 can be shortened. That is, it is more preferable to perform particle discharge using the exhaust section 20 and particle discharge using the cleaning section 50. However, if the particle discharge using the exhaust section 20 is performed while the workpiece 100 is in the chamber 10, there is a risk that the particles will adhere to the surface of the workpiece 100. It is preferable that the exhaust unit 20 and the cleaning unit 50 discharge the particles while the organic film forming apparatus 1 is in a standby state.

FIG. 6 is also a graph when only the particles are discharged using the cleaning section 50. However, in the case of FIG. 6 , the cleaning gas G is supplied sequentially from the plurality of nozzles 41. For example, the cleaning gas G is supplied from any of the plurality of nozzles 41 for a predetermined time, and after the supply of the cleaning gas G from the plurality of nozzles 41 is stopped, the cleaning gas G is supplied from the other plurality of nozzles 41 for a predetermined time. In this case, the cleaning gas G may be supplied sequentially from the plurality of nozzles 41 disposed above, the cleaning gas G may be supplied sequentially from the plurality of nozzles 41 disposed below, or the cleaning gas G may be supplied sequentially from any of the plurality of nozzles 41. In addition, the nozzle 41 used when supplying the cleaning gas G may also be one.

As can be seen from FIG. 6 , the amount of particles detected decreased during a period of 3 minutes from the start of particle discharge using the cleaning section 50. However, the amount of particles detected increased when the time elapsed from the start of particle discharge using the cleaning section 50 was 4 minutes. This is believed to be because the airflow of the cleaning gas G in the chamber 10 was changed by changing the supply of the cleaning gas from the plurality of nozzles 41 to other plurality of nozzles 41. It is believed that the particles that could not be discharged using the previous airflow of the cleaning gas G were discharged to the outside of the chamber 10 due to the change in the airflow of the cleaning gas G in the chamber 10.

Therefore, as can be seen from the comparison between Fig. 5 and Fig. 6, if the cleaning gas G is supplied sequentially from the plurality of nozzles 41 to the other plurality of nozzles 41, the amount of discharged particles can be greatly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.

FIG. 7 is a schematic cross-sectional view of a cleaning section 50a for illustrating another embodiment. Like the cleaning section 50 described above, the cleaning section 50a has, for example, a plurality of nozzles 41, a gas source 52, and a gas control section 53. In addition, as shown in FIG. 6 , the cleaning section 50a may also have a detection section 56.

The detection unit 56 may be provided at a position facing the opening 11a of the chamber 10. The detection unit 56 detects foreign matter such as particles contained in the clean gas G exhausted from the opening 11a of the chamber 10. The detection unit 56 may be, for example, a particle counter or the like.

If a detection unit 56 is provided, the end point of cleaning can be detected. For example, when the amount of foreign matter detected by the detection unit 56 becomes less than a specified value, the controller 60 can control the gas control unit 53 to stop the supply of the cleaning gas G and end the cleaning operation. If the end point of cleaning can be detected, the consumption of the cleaning gas G can be reduced compared to the case where the cleaning is ended by time management, etc. In addition, foreign matter inside the chamber 10 can be removed more appropriately.

FIG8 is a schematic cross-sectional view of a cleaning section 50b for illustrating another embodiment. Like the cleaning section 50 described above, the cleaning section 50b has, for example, a plurality of nozzles 41, a gas source 52, and a gas control section 53. In addition, as shown in FIG8 , the cleaning section 50b may also have a detection section 56 and a frame 55.

The frame 55 has an airtight structure and can be disposed at a position facing the opening 11a of the chamber 10. The detection unit 56 can be disposed inside the frame 55. The frame 55 can be set as a mini-environment (local clean environment), for example.

As described above, the clean gas G exhausted from the chamber 10 contains foreign matter such as particles. Therefore, the foreign matter exhausted from the chamber 10 may diffuse into the gas environment in which the organic film forming apparatus 1 is installed. If the diffused foreign matter such as particles reaches the devices or components around the organic film forming apparatus 1, there is a possibility of contamination or failure. In addition, it is sometimes undesirable that the operator inhales foreign matter such as particles or the clean gas G.

If the frame 55 is provided, it is possible to suppress the diffusion of foreign matter or the cleaning gas G exhausted from the chamber 10 into the gas environment in which the organic film forming apparatus 1 is installed.

FIG9 is a schematic perspective view of an organic film forming device 1a for illustrating another embodiment. Like the cleaning section 50 described above, the cleaning section 150 has, for example, a plurality of nozzles 41, a gas source 52, and a gas control section 53. In addition, as shown in FIG9 , the cleaning section 150 may also have another cleaning section 50c.

The cleaning section 50c has a nozzle 51, a gas source 52, and a gas control section 53. As shown in FIG. 9, the nozzle 51 can be connected to the side of the chamber 10. A plurality of nozzles 51 can be provided on the side of the chamber 10. The nozzle 51 of the present embodiment is in the shape of a cylinder with a closed front end. The closed front end of the nozzle 51 extends to the side of the chamber 10 facing the side of the chamber 10 where the nozzle 51 is provided. A plurality of nozzle holes 51a are provided on the side of the nozzle 51. In addition, the number or arrangement of the nozzles 51 can be changed as appropriate. For example, a plurality of nozzles 51 can be arranged along the Y direction on the side of the chamber 10. The nozzles 51 may be provided on the two opposing sides of the chamber 10. The nozzles 51 may be provided to pass through the two opposing sides of the chamber 10. A plurality of nozzles 51 may be arranged in the X direction on the cover 15.

FIG. 10 is a schematic cross-sectional view of a cleaning section 150 for illustrating another embodiment. As shown in FIG. 10 , the cleaning gas G can be introduced into the chamber 10 from the nozzle hole 51a of the nozzle 51. By providing the cleaning section 50c, the airflow of the cleaning gas G formed by the nozzle 41 can be strengthened. Alternatively, an airflow different from the airflow of the cleaning gas G formed by the nozzle 41 can be generated. Therefore, particles that cannot be discharged using the airflow of the cleaning gas G formed by the nozzle 41 are discharged to the outside of the chamber 10. Therefore, the number of discharged particles can be greatly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.

In addition, during the cooling process, cooling gas can also be supplied from the cleaning section 50c to the chamber. If the timing of supplying cooling gas is set to be just after the organic film is formed, or when the internal pressure of the chamber 10 is restored to atmospheric pressure, the cooling time and the time for returning to atmospheric pressure can be overlapped. That is, a substantial shortening of the cooling time can be achieved. In addition, sublimates are attached to the inner wall of the chamber 10. Therefore, in order to prevent the sublimates from peeling off from the inner wall of the chamber 10 and flowing into the inside of the processing area 30a and the processing area 30b, the supply amount of cooling gas from the cleaning section 50c is preferably less than the supply amount of cooling gas from the cooling section 40.

Furthermore, in the present embodiment, a plurality of nozzle holes are provided in one nozzle 51, but the present invention is not limited thereto. For example, one nozzle hole may be formed in one nozzle 51. In this case, the nozzle 51 is in the shape of a cylinder having a flange at the front end through the opening. Moreover, the nozzle 51 is airtightly connected to the hole on the side of the chamber 10. That is, the hole on the side of the chamber 10 may function as the nozzle hole 51a. Alternatively, in the case where the nozzle 51 is airtightly connected to the hole provided in the cover 15, the hole provided in the cover 15 may also function as the nozzle hole 51a.

FIG. 11 is a schematic perspective view of an organic film forming device 1b for illustrating another embodiment. Like the cleaning section 150 described above, the cleaning section 250 has, for example, a plurality of nozzles 41, a gas source 52, a cleaning section 50c, and a gas control section 53. In addition, as shown in FIG. 11, the cleaning section 250 may also have another cooling section 140.

The cooling part 140 supplies cooling gas to the workpiece 100 in the processing area 30a and the processing area 30b. That is, the cooling part 140 directly cools the workpiece 100 in a high temperature state. The difference between the cooling part 140 and the cooling part 40 is that the cooling part 140 has a nozzle 141 instead of the nozzle 41.

At least one nozzle 141 may be provided inside the processing area 30a or the processing area 30b (see FIG. 12 ). The nozzle 141, for example, passes through the cover 15 and the hood 36, so that it can be installed on the side heat spreader 34d or the frame 31, etc. In the present embodiment, the nozzle 141 is installed at a position where cooling gas can be supplied to the back of the workpiece 100. In addition, a plurality of nozzles 141 may be provided in the X direction. Alternatively, the nozzle 141 may be provided in a cylindrical shape with a closed front end. Moreover, a plurality of holes may be provided on the side of the nozzle 141, and inserted from the side of the chamber 10.

In the cooling process, cooling gas is ejected from the nozzle 141 in parallel with the workpiece 100. In addition, in FIG. 12 , the door 13 is in an open state, but in the cooling process described below, the door 13 is in a closed state. Cooling gas is supplied from the nozzle 141 in a substantially parallel manner with respect to the back side of the workpiece 100 (i.e., the surface supported by the support portion 33). As a result, the space between the workpiece 100 and the support portion 33 is filled with cooling gas, so that the workpiece 100 can be directly cooled. In addition, the cooling gas supplied from the nozzle 141 and discharged through the back side of the workpiece 100 to the outside of the chamber 10 from an exhaust port not shown in the figure. A plurality of exhaust ports (e.g., four) are provided in the ceiling portion of the chamber 10. When cooling gas is supplied to the chamber 10 in the cooling process, the heat in the chamber 10 moves upward in the chamber 10, so the heat can be efficiently discharged through the exhaust port provided in the ceiling portion. Furthermore, by sequentially supplying cooling gas from the nozzles 141 located at the lower side in the chamber 10 among the plurality of nozzles 141, an airflow toward the ceiling side of the chamber 10 is formed in the chamber 10. Thus, the particles in the chamber 10 can be efficiently discharged from the exhaust port.

Here, when the cooling process starts, the internal pressure of the chamber 10, which is lower than the atmospheric pressure, gradually approaches the atmospheric pressure by supplying the cooling gas. At this time, if the internal pressure of the chamber 10 suddenly approaches the atmospheric pressure, the workpiece 100 supported by the support portion 33 moves due to the pressure change, and rubs against the support portion 33 to generate particles. Therefore, first, after the cooling process starts, the cooling gas is only supplied from the nozzle 41 before the internal pressure of the chamber 10 reaches the specified pressure, and the workpiece 100 is indirectly cooled. The cooling gas supplied from the nozzle 41 is not directly supplied to the workpiece 100, but is supplied to the heat equalizing portion 34. Thus, the internal pressure of the chamber 10 gradually increases while avoiding a sudden change in pressure near the workpiece 100. Thereafter, after the internal pressure of the chamber 10 reaches a predetermined pressure, cooling gas is also supplied from the nozzle 141 to directly cool the workpiece 100. The predetermined pressure is a pressure at which the workpiece 100 does not move due to pressure changes caused by supplying cooling gas from the nozzle 141, and is obtained in advance by experiments or the like. Cooling gas is supplied from the nozzle 141 after the internal pressure of the chamber 10 has increased to a certain extent, so that the workpiece 100 does not move due to pressure changes. Thus, the generation of particles due to friction between the workpiece 100 and the support portion 33 can be effectively suppressed.

In addition, a plurality of nozzles (not shown) for blowing air from the bottom surface of the chamber 10 to the ceiling may be provided at the side end of the opening 11a of the chamber 10. In this way, an air flow from the bottom surface of the chamber 10 to the ceiling can be formed, so that the particles blown away by the nozzles 141 and 41 can be efficiently transported to the discharge port and discharged. In addition, the air flow formed by the nozzles (not shown) also functions as an air curtain to prevent particles from entering from outside the chamber 10 when the door 13 is opened.

In addition, a plurality of nozzles (not shown) may be provided to blow air from the ceiling to the bottom of the chamber 10. Furthermore, when used as an air curtain (when the door 13 is open), an air flow from the ceiling to the bottom of the chamber 10 may be formed. In this case, an air curtain in which air flows in the same direction as the downflow in the clean room provided in the organic film forming apparatus 1 can be formed, thereby more effectively preventing particles from entering the chamber 10.

In addition, the unillustrated nozzle that blows air from the bottom of the chamber 10 to the ceiling can be set not only on the side of the opening 11a, but also on the side of the cover 15. The cooling gas ejected from the cooling nozzle 141 enters the side of the door 13 through the back of the workpiece 100 after being ejected, and the flow rate gradually decreases. The cooling gas collides with the door 13, and when colliding with the side of the cover 15, the flow rate of the cooling gas becomes quite slow, and the cooling gas is easy to stagnate on the wall surface on the side of the cover 15. As a result, particles are attached to the wall surface on the side of the cover 15, and the particles attached to the wall surface on the side of the cover 15 are attached to the workpiece to be processed next. By providing a nozzle along the wall surface on the side of the cover 15 to blow air from the bottom surface of the chamber 10 to the ceiling, particles attached to the wall surface can be efficiently discharged from the discharge port.

When the workpiece 100 is cooled indirectly and directly, in the cooling process, cooling gas is supplied from the cooling unit 40 and the cooling unit 140. That is, the workpiece 100 can be directly cooled using the nozzle 141 of the cooling unit 140. Thus, the cooling time can be substantially shortened.

FIG. 12 is a schematic cross-sectional view of a cleaning section 250 for illustrating another embodiment. By providing the cooling section 140, the cleaning gas G can also be supplied from the nozzle 141 to the inside of the processing area 30a and the processing area 30b. Therefore, the airflow of the cleaning gas G formed by the nozzle 41 can be strengthened. Therefore, particles that cannot be discharged by the airflow of the cleaning gas G formed by the nozzle 41 are discharged to the outside of the chamber 10. Therefore, the number of discharged particles can be greatly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.

As described above, the cleaning method of the organic film forming apparatus of the present embodiment is a cleaning method of the organic film forming apparatus having a chamber 10, wherein the chamber 10 has an opening 11a for carrying in or out the workpiece 100, and can maintain a gas environment that is further reduced in pressure than atmospheric pressure. In the cleaning method of the organic film forming apparatus of the present embodiment, when the opening 11a of the chamber 10 is opened, a flow of the cleaning gas G flowing toward the opening 11a of the chamber 10 is formed inside the chamber 10.

In addition, by sequentially supplying the cleaning gas G from the plurality of nozzles 41, a flow of the cleaning gas G is formed.

In addition, when the amount of foreign matter contained in the cleaning gas G discharged from the opening 11a of the chamber 10 is less than a specified value, the formation of the flow of the cleaning gas G is stopped. When the flow of the cleaning gas G flowing to the opening 11a of the chamber 10 is formed, the workpiece 100 is not supported inside the chamber 10.

In addition, the flow of the cleaning gas G formed by sequentially supplying the cleaning gas G from the plurality of nozzles 41 may be enhanced by sequentially supplying the cleaning gas G from the plurality of nozzles 51, the plurality of nozzles 141, or both. Alternatively, a flow different from the flow of the cleaning gas G formed by sequentially supplying the cleaning gas G from the plurality of nozzles 41 may be formed by sequentially supplying the cleaning gas G from the plurality of nozzles 51, the plurality of nozzles 141, or both.

The above examples illustrate the embodiments. However, the present invention is not limited to these descriptions. As long as the technical personnel in the field of this field appropriately apply design changes to the embodiments described above, the embodiments obtained are also included in the scope of the present invention as long as they have the characteristics of the present invention. For example, the shape, size, configuration, etc. of the organic film forming device 1 are not limited to the examples and can be appropriately changed. In addition, the various elements included in the various embodiments described above can be combined as much as possible, and the embodiments obtained by combining these combinations are also included in the scope of the present invention as long as they have the characteristics of the present invention.

1, 1a, 1b: Organic film forming device 10: Chamber 11, 14: Flange 11a: Opening 12: Sealing material 13: Door (opening and closing door) 15: Cover 16, 40, 140: Cooling section 17, 18: Exhaust port 20: Exhaust section 21: First exhaust section 21a, 22a: Exhaust pump 21b: Pressure control section 22: Second exhaust section 22b: Pressure control section 23: Third exhaust section 24: Cold trap 25: Valve 30: Processing section 30a, 30b: Processing area 31: Frame 32: Heating section 32a: Heater 32b: Holder 33: Supporting part 34: Heat averaging part 34a: Upper heat averaging plate 34b: Lower heat averaging plate 34c, 34d: Side heat averaging plates 35: Heat averaging plate supporting part 36: Cover 40a: First gas supply path 40b: Second gas supply path 41, 51: Nozzle 42, 52: Gas source 43, 53: Gas control part 50, 50a, 50b, 50c, 150, 250: Cleaning part 51a: Nozzle hole 54: Switching valve 55: Frame 56: Detection part 60: Controller 100: Workpiece (substrate) 141: Nozzle (cooling nozzle) G: Clean gas X, Y, Z: Direction

FIG. 1 is a schematic perspective view of an organic film forming device for illustrating the present embodiment. FIG. 2 is a diagram for illustrating a processing step of a workpiece. FIG. 3 is a schematic cross-sectional view for illustrating the function of a cleaning section. FIG. 4 is a diagram for combining the discharge of particles using an exhaust section and the discharge of particles using a cleaning section. FIG. 5 is a diagram for only discharging particles using a cleaning section. FIG. 6 is a diagram for only discharging particles using a cleaning section. FIG. 7 is a schematic cross-sectional view of a cleaning section for illustrating another embodiment. FIG. 8 is a schematic cross-sectional view of a cleaning section for illustrating another embodiment. FIG. 9 is a schematic perspective view of an organic film forming device for illustrating another embodiment. FIG. 10 is a schematic cross-sectional view of a cleaning section for illustrating another embodiment. FIG. 11 is a schematic perspective view of an organic film forming device for illustrating another embodiment. FIG. 12 is a schematic cross-sectional view of a cleaning unit for illustrating another embodiment.

10: Chamber

11: flange

11a: Opening

13: Door (open and close)

16: Cooling unit

20: Exhaust section

32: Heating section

36: Hood

41: Spray nozzle

50: Cleaning Department

G: Clean gas

X, Y, Z: direction

Claims (2)

An organic film forming device includes: a chamber having an opening for carrying in or out a workpiece, capable of maintaining a gas environment further reduced in pressure than atmospheric pressure; an exhaust portion capable of exhausting the interior of the chamber; a support portion disposed inside the chamber, capable of supporting the workpiece; a heating portion disposed inside the chamber, capable of heating the workpiece; a cooling portion, supplying cooling gas to the interior of the heating portion; a plurality of first nozzles connected to a space in which the heating portion is disposed and capable of supplying the cooling gas; a plurality of second nozzles capable of The cooling gas is supplied to the back of the workpiece; and a controller capable of controlling the cooling unit, wherein the controller controls in the following manner: the cooling gas is supplied only from the first nozzle during the period from the start of the cooling process to the time when the internal pressure of the chamber reaches a predetermined pressure, and the cooling gas is also supplied from the second nozzle after the internal pressure of the chamber reaches a predetermined pressure by the cooling gas supplied from the first nozzle, wherein the cooling process is a process for lowering the temperature of the workpiece on which the organic film is formed. An organic film forming device as described in claim 1, wherein the prescribed pressure is a pressure that does not change due to pressure changes caused by supplying the cooling gas from the second nozzle.