TWI842632B - Inkjet chip packaging structure - Google Patents
Inkjet chip packaging structure Download PDFInfo
- Publication number
- TWI842632B TWI842632B TW112136493A TW112136493A TWI842632B TW I842632 B TWI842632 B TW I842632B TW 112136493 A TW112136493 A TW 112136493A TW 112136493 A TW112136493 A TW 112136493A TW I842632 B TWI842632 B TW I842632B
- Authority
- TW
- Taiwan
- Prior art keywords
- inkjet
- control module
- package structure
- chip package
- inkjet chip
- Prior art date
Links
Images
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
本發明係有關一種噴墨晶片封裝結構,更詳而言之,為改善傳統噴墨晶片內在因為電路漏電流而使得電力利用效率低下的噴墨晶片封裝結構。 The present invention relates to an inkjet chip packaging structure, and more specifically, to improve the low power utilization efficiency of traditional inkjet chips due to circuit leakage current.
噴墨列印技術,通常稱為「Inkjet Printing」,是一種廣泛使用的印刷技术,它的歷史可以追溯到1950年代,當時英國HP公司(Hewlett-Packard)發明了噴墨印刷技術。自那時以來,噴墨列印技術發展迅速,使得噴墨印表機成為家庭和商用印刷的主流技術,噴墨印表機擁有許多優點,包含:成本低廉,尤其在家庭和小型商業用途方面具有經濟優勢;較高的印刷品質,可以提供高解析度和高品質的圖像,特別是在照片或圖片方面;方便使用,噴墨印表機易於安裝,且大多數噴墨印表機可以通過電腦或移動設備進行印刷,與近年來興起具有多合一功能(包含傳真、影印、掃描)的事務機結合以後可迅速地擴展辦公室中的文書作業彈性。 Inkjet printing technology, commonly known as "Inkjet Printing", is a widely used printing technology. Its history can be traced back to the 1950s when the British HP (Hewlett-Packard) invented inkjet printing technology. Since then, inkjet printing technology has developed rapidly, making inkjet printers the mainstream technology for home and commercial printing. Inkjet printers have many advantages, including: low cost, especially economical for home and small business use; high print quality, can provide high resolution and high quality images, especially in photos or pictures; convenient to use, inkjet printers are easy to install, and most inkjet printers can print through computers or mobile devices. Combined with the recent rise of office machines with all-in-one functions (including fax, photocopying, scanning), it can quickly expand the flexibility of paperwork in the office.
請參閱第1A圖,其描述了先前習知技術中,墨水匣10與印表機之間的匹配與控制方式:墨水匣10包含一噴墨晶片120,噴墨晶片120存儲上述墨水匣序號、墨水類型、噴墨頭-印表機間匹配訊息等資訊。其中,上述的噴墨晶片120在接收印表機所發出的噴射訊號以後,即會啟動相應的噴孔122噴射出墨滴,噴墨晶片120中,則具有金氧半場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor,簡稱:MOSFET)作
為核心元件,藉由操作MOSFET的啟閉,來達到控制噴孔是否噴射出墨滴的目的。
Please refer to Figure 1A, which describes the matching and control method between the
請繼續參閱第1B圖,在第1B圖中,以一N-Type MOSFET進行舉例,其描述了目前知技術中的工作情形。在第1B圖中,當一個正電壓施加在閘極G上,帶負電的電子就會被吸引至表面形成通道,使N-Type的MOSFET中,多數載子(電子)可以從源極S流向汲極D。如果該正電壓被移除,或是施加一個負電壓,那麼通道就無法形成,理論上載子也無法在源極S與汲極D之間流動,也就是說,MOSFET可以透過閘極G的電壓控制電流通道的開關。然而,眾所周知的,MOSFET普遍存在漏電流(Leakage Current)的現象,此等現象,曾在2018年Daniel Johannesson等人,於IEEE Transactions on Power Electronics期刊中(Volume:33,Issue:6,June 2018)探討與量測了其在不同的工況條件影響下漏電流的存在情形,例如溫度,或是於閘極G所施加的電壓大小等等。以目前所知的觀念,漏電流大致可區分為施加逆向偏壓時P-N接面(P-N junction)的漏電流、藉由穿隧效應通過栅极G上氧化層的漏電流、熱載子從基底流過栅極G氧化層的漏電流等數種。 Please continue to refer to Figure 1B. In Figure 1B, an N-Type MOSFET is used as an example to describe the working conditions in the currently known technology. In Figure 1B, when a positive voltage is applied to the gate G, negatively charged electrons are attracted to the surface to form a channel, so that in the N-Type MOSFET, most carriers (electrons) can flow from the source S to the drain D. If the positive voltage is removed or a negative voltage is applied, the channel cannot be formed, and theoretically the carriers cannot flow between the source S and the drain D. In other words, the MOSFET can control the switch of the current channel through the voltage of the gate G. However, it is well known that MOSFET generally has leakage current. This phenomenon was discussed and measured by Daniel Johannesson et al. in IEEE Transactions on Power Electronics (Volume: 33, Issue: 6, June 2018) in 2018. The existence of leakage current under different working conditions, such as temperature, or the voltage applied to the gate G, etc. Based on the current known concepts, leakage current can be roughly divided into leakage current of the P-N junction when reverse bias is applied, leakage current through the oxide layer on the gate G by tunneling effect, and leakage current of hot carriers flowing from the substrate through the oxide layer of the gate G.
承上述,在目前的應用層面上,若希望將漏電流的影響減少,除非使用較高階的製程,亦即,透過如雜質的摻雜濃度、半導體結構如氧化層厚度,或是製作材料的選擇調整,才能使漏電流極小化。在第1B圖中,即顯示了MOSFET中,正常流通的第二電流I2,及在漏電路徑流通的第三電流I3之情形。請繼續參閱第1C圖,回到前述噴墨列印技術的應用來討論,一般而言,在低階的製程中,通常為了成本考量,使得所製作出來的MOSFET會存在較大的漏電流,因此於具有MOSFET作為控制噴墨動作核心元件的噴墨晶片120中,一般所有的電流輸出端Gn與
接地端GND都會電性連接,使得第三電流I3會由接地端GND回到印表機端,如此一來,會造成噴墨晶片120中的加熱電阻對於電力的利用效率不佳,噴印效果差,且作為漏電流的第三電流I3,在MOSFET未運作時,同樣也會有漏電現象,使得在現有時點的市場上,噴墨列印技術存在墨水加熱不良,故而亟需改進的缺點。
Based on the above, in the current application level, if you want to reduce the impact of leakage current, you must use a more advanced process, that is, through the doping concentration of impurities, semiconductor structure such as oxide layer thickness, or the selection and adjustment of manufacturing materials, to minimize the leakage current. In Figure 1B, it shows the second current I2 flowing normally in the MOSFET and the third current I3 flowing in the leakage path. Please continue to refer to FIG. 1C and return to the application of the inkjet printing technology. Generally speaking, in low-level manufacturing processes, for cost considerations, the MOSFET produced will have a large leakage current. Therefore, in the
基於以上原因,本發明提出一種噴墨晶片封裝結構,透過改進前述噴墨晶片封裝結構中的電路接點,使在噴墨晶片中,作為控制噴墨列印技術中的金氧半場效電晶體(MOSFET)漏電流得以趨零,使原有的漏電流能夠走回正常電流的流通途徑,藉此增加MOSFET的電力利用成效,達到本發明提高噴墨晶片於列印時加熱墨水的效率,以作為提高噴墨列印品質的技術手段,同時,經過改進的噴墨晶片封裝結構,亦可同時對噴墨晶片中,不同高、低階製程來源的MOSFET具有一定的增益效果,其詳細的技術方案則將詳述如下。 Based on the above reasons, the present invention proposes an inkjet chip packaging structure. By improving the circuit contacts in the aforementioned inkjet chip packaging structure, the leakage current of the metal oxide semiconductor field effect transistor (MOSFET) in the inkjet chip, which controls the inkjet printing technology, can be reduced to zero, so that the original leakage current can return to the normal current flow path, thereby increasing the power utilization effect of the MOSFET, and achieving the present invention to improve the efficiency of the inkjet chip in heating the ink during printing, so as to improve the quality of inkjet printing. At the same time, the improved inkjet chip packaging structure can also have a certain gain effect on the MOSFET of different high- and low-level process sources in the inkjet chip. The detailed technical solution will be described in detail as follows.
本發明提出一種噴墨晶片封裝結構,該噴墨晶片封裝結構被設置於一軟性電路板上,包含以下元件:電路板接點;噴墨晶片,進一步包含信號控制模組、噴墨控制模組、噴孔、電流輸入端、接地端,以及電流輸出端;其中,信號控制模組接收來自印表機傳輸予電路板接點的列印控制信號;噴墨控制模組耦接信號控制模組,藉由列印控制信號驅動噴孔噴射列印所需之墨水;電流輸入端接受由電路板接點輸入的第一電流,提供噴墨控制模組運作所需的電力;電流輸出端耦接電路板接點,輸出第二電流,使噴墨晶片封裝結構與印表機構成電力迴路;接地端未與電路板接點連接;其中,噴墨控制模組包含控制單元,該控制單元為MOSFET。 The present invention provides an inkjet chip package structure, which is arranged on a flexible circuit board and includes the following components: circuit board contacts; an inkjet chip, further including a signal control module, an inkjet control module, a nozzle, a current input terminal, a ground terminal, and a current output terminal; wherein the signal control module receives a print control signal transmitted from a printer to the circuit board contacts; the inkjet control module is coupled to the signal control module, The print control signal drives the nozzle to eject the ink required for printing; the current input terminal receives the first current input from the circuit board contact to provide the power required for the inkjet control module to operate; the current output terminal is coupled to the circuit board contact to output the second current, so that the inkjet chip package structure and the printer form a power loop; the ground terminal is not connected to the circuit board contact; wherein, the inkjet control module includes a control unit, which is a MOSFET.
根據本發明之內容,所述的MOSFET,可依應用的需要選自N型金氧半場效電晶體(NMOS)或P型金氧半場效電晶體(PMOS)。 According to the content of the present invention, the MOSFET can be selected from N-type metal oxide semiconductor field effect transistor (NMOS) or P-type metal oxide semiconductor field effect transistor (PMOS) according to the application needs.
根據本發明之內容,所述的噴墨控制模組更包含加熱電阻單元,用以加熱列印所需的墨水。 According to the content of the present invention, the inkjet control module further includes a heating resistor unit for heating the ink required for printing.
10:墨水匣 10: Ink cartridge
100:軟性電路板 100: Flexible circuit board
110:電路板接點 110: Circuit board contacts
120:噴墨晶片 120: Inkjet chip
121:噴墨控制模組 121: Inkjet control module
122:噴孔 122: Blowhole
123:信號控制模組 123:Signal control module
121A:加熱電阻單元 121A: Heating resistor unit
121B:控制單元 121B: Control unit
D:汲極 D: Drain
Fn:電流輸入端 F n : Current input terminal
G:閘極 G: Gate
Gn:電流輸出端 Gn : Current output terminal
GND:接地端 GND: Ground terminal
I1:第一電流 I 1 : First current
I2:第二電流 I 2 : Second current
I3:第三電流 I 3 : The third current
S:源極 S: Source
如下所述之對本發明的詳細描述與實施例之示意圖,應使本發明更被充分地理解;然而,應可理解此僅限於作為理解本發明應用之參考,而非限制本發明於一特定實施例之中。 The detailed description of the present invention and the schematic diagram of the embodiment described below should enable the present invention to be more fully understood; however, it should be understood that this is only limited to a reference for understanding the application of the present invention, rather than limiting the present invention to a specific embodiment.
第1A圖說明墨水匣之結構,以及噴墨晶片的設置方式。 Figure 1A illustrates the structure of the ink cartridge and the placement of the inkjet chip.
第1B圖說明習知技術中MOSFET運作時存在的漏電流現象。 Figure 1B illustrates the leakage current phenomenon that exists when MOSFET is operating in the prior art.
第1C圖說明習知技術中噴墨晶片封裝時和軟性電路板之間的接線結構。 Figure 1C illustrates the wiring structure between the inkjet chip package and the flexible circuit board in the prior art.
第2A圖說明本發明中噴墨晶片封裝時和軟性電路板之間的接線結構。 Figure 2A illustrates the wiring structure between the inkjet chip package and the flexible circuit board in the present invention.
第2B圖進一步說明噴墨晶片封裝結構中,噴墨控制模組的詳細結構。 Figure 2B further illustrates the detailed structure of the inkjet control module in the inkjet chip packaging structure.
第2C圖進一步說明噴墨控制模組的電路結構。 Figure 2C further illustrates the circuit structure of the inkjet control module.
第3圖說明MOSFET運作時,透過本發明噴墨晶片封裝結構,使漏電流現象經過改善後的結果。 Figure 3 illustrates the result of improving the leakage current phenomenon when MOSFET is in operation through the inkjet chip packaging structure of the present invention.
本發明將以較佳之實施例及觀點加以詳細敘述。下列描述提供本發明特定的施行細節,俾使閱讀者徹底瞭解這些實施例之實行方式。然該領域之熟習技藝者須瞭解本發明亦可在不具備這些細節之條件下實行。此外,本發明亦可藉由其他具體實施例加以運用及實施,本說明書 所闡述之各項細節亦可基於不同需求而應用,且在不悖離本發明之精神下進行各種不同的修飾或變更,因此本發明將以較佳實施例及觀點加以敘述,此類敘述係解釋本發明之結構,僅用以說明而非用以限制本發明之申請專利範圍。以下描述中使用之術語將以最廣義的合理方式解釋,使其能與本發明某特定實施例之細節描述一起使用,本領域熟知技術者自可依照製造或應用的需求調整本發明之結構,以符合實際產業的需求。 The present invention will be described in detail with preferred embodiments and viewpoints. The following description provides specific implementation details of the present invention so that the reader can fully understand the implementation methods of these embodiments. However, those skilled in the art in this field should understand that the present invention can also be implemented without these details. In addition, the present invention can also be used and implemented through other specific embodiments. The various details described in this specification can also be applied based on different needs, and various modifications or changes can be made without departing from the spirit of the present invention. Therefore, the present invention will be described with preferred embodiments and viewpoints. Such descriptions are to explain the structure of the present invention and are only used for illustration and not to limit the scope of the patent application of the present invention. The terms used in the following description will be interpreted in the broadest reasonable manner so that they can be used together with the detailed description of a specific embodiment of the present invention. Those skilled in the art can adjust the structure of the present invention according to the requirements of manufacturing or application to meet the needs of the actual industry.
請參閱第2A圖、第2B圖、第2C圖與第3圖,本發明提出一種噴墨晶片封裝結構,該噴墨晶片封裝結構被設置於一軟性電路板100上,包含以下元件:電路板接點110;以及,噴墨晶片120,所述的噴墨晶片120進一步包含信號控制模組123、噴墨控制模組121、噴孔122、電流輸入端Fn、接地端GND,以及電流輸出端Gn;其中,信號控制模組123接收來自印表機傳輸予電路板接點110的列印控制信號;噴墨控制模組121耦接信號控制模組123,藉由列印控制信號驅動噴孔122噴射列印所需之墨水;電流輸入端Fn接受由電路板接點110輸入的第一電流I1,提供噴墨控制模組121運作所需的電力;電流輸出端Gn耦接電路板接點110,輸出第二電流I2,使噴墨晶片封裝結構與印表機構成電力迴路;其中接地端GND未與電路板接點110連接,而噴墨控制模組121則包含控制單元121B,該控制單元121B為金氧半場效電晶體(MOSFET)。
Please refer to FIG. 2A, FIG. 2B, FIG. 2C and FIG. 3. The present invention provides an inkjet chip package structure, which is disposed on a
根據本發明之實施例,上揭所述的MOSFET,可依應用的需要選自N型金氧半場效電晶體(NMOS)或P型金氧半場效電晶體(PMOS)。此外,根據本發明之內容,所述的噴墨控制模組121更包含加熱電阻單元121A,用以加熱列印所需的墨水,其中,在噴墨控制模組121中加熱電
阻單元121A和控制單元121B的數量,皆可依應用的需要加以任意設置為至少一個以上。
According to the embodiment of the present invention, the MOSFET mentioned above can be selected from N-type metal oxide semiconductor field effect transistor (NMOS) or P-type metal oxide semiconductor field effect transistor (PMOS) according to the needs of the application. In addition, according to the content of the present invention, the
承上述,請參閱第1B圖、第2C圖,以及第3圖,根據本發明之一觀點,於習知技術採用低階噴墨晶片製程的電路架構中,一般所有接地端GND皆電性連接,故當控制單元121B使用MOSFET時,所有電流輸出端Gn和接地端GND都會電性連接,因此此時的漏電流I3會由接地端GND經過電路板接點110回到印表機,從而使得墨水加熱效果不佳,同時MOSFET在未運作時,也會有漏電流的現象產生,換句話說,根據上述幾個圖式的說明,習知技術中,由電流輸入端Fn輸入的第一電流I1,會有相當程度的耗損在第三電流I3(也就是漏電流)當中,而不會行走正常的第二電流I2,由汲極D至源極S此一路徑。然而,在本發明中,由於接地端GND並未與電路板接點110連接,該種電路架構,可以使經過電流輸入端Fn所輸入的第一電流I1在通過加熱電阻單元121A,且作為控制單元121B的MOSFET之閘極G給定高電壓,而使噴墨控制模組121的電性導通時,第三電流I3的大小能夠趨零,最終使得加熱電阻單元121A的電力利用效率提高,達到本發明中,噴墨晶片120中,無論是含有高、低階製程來源的MOSFET皆能達到一定的增益效果。
As mentioned above, please refer to FIG. 1B, FIG. 2C, and FIG. 3. According to one viewpoint of the present invention, in the circuit structure of the prior art using the low-level inkjet chip process, generally all the ground terminals GND are electrically connected. Therefore, when the
根據本發明之實施例,經過上述電路架構改良後的噴墨晶片封裝結構所能對應的解析度DPI(Dots Per Inch,每一英吋的點數量)範圍介於150至48000DPI,而可列印範圍(printing swath)介於0.25英吋至12英吋。 According to the embodiment of the present invention, the inkjet chip package structure after the above circuit structure improvement can correspond to a resolution DPI (Dots Per Inch, the number of dots per inch) ranging from 150 to 48000 DPI, and the printing range (printing swath) is between 0.25 inches and 12 inches.
根據本發明之實施例,加熱電阻單元121A的材料選自多晶矽(Poly silicon)、鋁化鉭(TaAl)、鉭(Ta)、氮化鉭(TaN)、二矽化鉭(Si2Ta)、碳(C)、碳化矽(SiC)、氧化銦錫(ITO)、氧化鋅(ZnO)、硫化鎘(CdS)、二硼化鉿(HfB2)、鈦鎢合金(TiW)、氮化鈦(TiN)之其中之一。
According to an embodiment of the present invention, the material of the
根據本發明之實施例,噴墨晶片封裝結構應用於墨水匣10的結構時,可提供一至六色的墨水。若為一色,此一色墨水可以分別青色(C:Cyan)、洋紅色(M:Megenta)、黃色(Y:Yellow)、黑色(K:Black)墨水。若為六色,則可分別提供黑色(K:Black)、青色(C:Cyan)、洋紅色(M:Megenta)、黃色(Y:Yellow)、淺青色(LC:Light Cyan)和淡洋紅色(LM:Light Megenta)六色墨水。當然,在另外實施例中,墨水匣10也可為四色,分別提供青色(C:Cyan)、洋紅色(M:Megenta)、黃色(Y:Yellow)、黑色(K:Black)四色墨水。其中上述供墨的數量或提供的顏色,均可依實際的應用需求設計來加以置換或修飾。
According to the embodiment of the present invention, when the inkjet chip package structure is applied to the structure of the
綜合以上,本發明藉由提出噴墨晶片封裝結構應用於噴墨列印技術,使該封裝結構能夠改善來自高、低階製程中的MOSFET元件,提高墨水加熱時的效率以改進噴墨列印的品質,其中的技術提案當得由熟習此技術之人士任施匠思而為諸般修飾,然皆不脫如附申請專利範圍所欲保護的權利。 In summary, the present invention proposes an inkjet chip package structure for use in inkjet printing technology, so that the package structure can improve MOSFET components from high- and low-level processes, increase the efficiency of ink heating, and improve the quality of inkjet printing. The technical proposals therein can be modified by people familiar with this technology, but they are all within the scope of the rights to be protected as claimed in the attached patent application.
100:軟性電路板 100: Flexible circuit board
110:電路板接點 110: Circuit board contacts
120:噴墨晶片 120: Inkjet chip
121:噴墨控制模組 121: Inkjet control module
122:噴孔 122: Blowhole
123:信號控制模組 123:Signal control module
Fn:電流輸入端 F n : Current input terminal
Gn:電流輸出端 Gn : Current output terminal
GND:接地端 GND: Ground terminal
Claims (7)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112136493A TWI842632B (en) | 2023-09-23 | 2023-09-23 | Inkjet chip packaging structure |
| CN202410914682.0A CN119682396A (en) | 2023-09-23 | 2024-07-09 | Ink jet chip packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112136493A TWI842632B (en) | 2023-09-23 | 2023-09-23 | Inkjet chip packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI842632B true TWI842632B (en) | 2024-05-11 |
| TW202514819A TW202514819A (en) | 2025-04-01 |
Family
ID=92077071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112136493A TWI842632B (en) | 2023-09-23 | 2023-09-23 | Inkjet chip packaging structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN119682396A (en) |
| TW (1) | TWI842632B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI914923B (en) | 2024-08-21 | 2026-02-11 | 研能科技股份有限公司 | Multicolor inkjet chip structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW509634B (en) * | 2001-01-17 | 2002-11-11 | Macroblock Inc | Apparatus for heating ink of inkjet printer |
| US6536871B1 (en) * | 1997-11-05 | 2003-03-25 | Hewlett-Packard Company | Reliable flex circuit interconnect on inkjet print cartridge |
| US20040183844A1 (en) * | 2002-12-17 | 2004-09-23 | Anderson Frank Edward | Integrated circuit and drive scheme for an inkjet printhead |
| JP2008173818A (en) * | 2007-01-17 | 2008-07-31 | Brother Ind Ltd | Inkjet recording device |
-
2023
- 2023-09-23 TW TW112136493A patent/TWI842632B/en active
-
2024
- 2024-07-09 CN CN202410914682.0A patent/CN119682396A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6536871B1 (en) * | 1997-11-05 | 2003-03-25 | Hewlett-Packard Company | Reliable flex circuit interconnect on inkjet print cartridge |
| TW509634B (en) * | 2001-01-17 | 2002-11-11 | Macroblock Inc | Apparatus for heating ink of inkjet printer |
| US20040183844A1 (en) * | 2002-12-17 | 2004-09-23 | Anderson Frank Edward | Integrated circuit and drive scheme for an inkjet printhead |
| JP2008173818A (en) * | 2007-01-17 | 2008-07-31 | Brother Ind Ltd | Inkjet recording device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI914923B (en) | 2024-08-21 | 2026-02-11 | 研能科技股份有限公司 | Multicolor inkjet chip structure |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202514819A (en) | 2025-04-01 |
| CN119682396A (en) | 2025-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10226921B2 (en) | Printhead substrate and printing apparatus | |
| KR100442515B1 (en) | Printhead and printing apparatus using said printhead | |
| CN1941440B (en) | Composite semiconductor device | |
| US8542262B2 (en) | Light emitting element array, drive circuit, optical print head, and image forming apparatus | |
| JP6608269B2 (en) | Semiconductor device and recording device | |
| US8848012B2 (en) | Drive device, print head and image forming apparatus | |
| US9802404B2 (en) | Chip layout to enable multiple heater chip vertical resolutions | |
| CN1071197C (en) | Elecronic parts, thermal head, manufacturing method of the thermal head, and heat sensitive recording apparatus | |
| TWI842632B (en) | Inkjet chip packaging structure | |
| US20120001996A1 (en) | Driving device, print head and image forming device | |
| KR20020096920A (en) | Ink-jet printhead board, ink-jet printhead, and ink-jet printing apparatus | |
| EP1370418B1 (en) | Printhead integrated circuit | |
| CN101010199A (en) | Jetting print head | |
| CN114434968A (en) | wafer structure | |
| US20050162474A1 (en) | Head chip for inkjet printers and method thereof | |
| CN114434966A (en) | wafer structure | |
| TWI891057B (en) | Identification chip | |
| TWI905850B (en) | Nozzle addressing control circuit structure | |
| TWI894626B (en) | Identification chip | |
| JP5111198B2 (en) | Element substrate, recording head, head cartridge, and recording apparatus | |
| CN119567721A (en) | Identification wafer | |
| JP2001010101A (en) | Thermal head | |
| CN119261374A (en) | Identification chip |